JP2022048094A - Etching processing method and substrate processing device - Google Patents

Abstract

To provide an etching processing method and a substrate processing device which can improve a selected ratio of a foundation layer relative to a film to be subjected to etching.SOLUTION: The etching processing method includes: a step in which a substrate, in which a laminated film including at least a silicon-containing insulation layer, a foundation layer and a mask layer is formed, is placed on a placement base; a step of supplying processing gas including at least either of fluorocarbon gas and hydrofluorocarbon gas; a step of selecting a range of a surface temperature of at least either of a member opposing to the substrate and a member provided on an outer periphery of the substrate, of members in a processing container, on the basis of a combination of a material quality of the silicon-containing insulation layer and a material quality of the foundation layer; a step of controlling the surface temperature of at least either of the member opposing to the substrate and the member provided on the outer periphery of the substrate to a desired temperature in a range of the selected surface temperatures; a step of etching the silicon-containing insulation layer while generating plasma in the processing container supplied with the processing gas.SELECTED DRAWING: Figure 9

Description

The present disclosure relates to an etching processing method and a substrate processing apparatus.

In the manufacture of a three-dimensional laminated semiconductor memory such as a 3D-NAND flash memory, there is an etching step of forming a plurality of holes in a silicon-containing insulating layer using plasma. As an example of the etching process for forming the device structure of 3D-NAND, when the holes are etched in the silicon oxide layer, the silicon layer of the substrate and the metal layer located in the middle are simultaneously and highly selectively etched. There is a process to do. In this etching step, a relatively shallow hole for exposing the metal layer located in the middle of the silicon oxide layer is formed, and a deep hole for exposing the silicon layer below the metal layer is formed. At this time, it is necessary to carry out a process in which the selection ratio of the base metal film to the silicon oxide layer is high. Further, in addition to the device structure of 3D-NAND, there is a demand for a process in which the selection ratio of the underlying layer with respect to the film to be etched is increased and the loss of the underlying layer is small.

In order to secure a high selectivity, one of the methods is to form a protective film on the tungsten layer using process conditions with high depotability. For example, Patent Document 1 proposes a plasma treatment method capable of forming a protective film on the surface of an etching stop layer and suppressing blockage of a hole opening when etching an oxide layer.

Patent Document 2 supplies a treatment gas containing at least fluorocarbon gas or hydrofluorocarbon gas, oxygen, nitrogen, and CO in order to achieve both a metal layer selectivity and a mask selectivity, and the treatment gas is supplied. We propose a method of etching the silicon-containing insulating layer by generating plasma in the treated container.

Japanese Unexamined Patent Publication No. 2014-090022 Japanese Unexamined Patent Publication No. 2019-036612

The present disclosure provides an etching treatment method capable of improving the selection ratio of the underlying layer with respect to the film to be etched.

According to one aspect of the present disclosure, a laminated film having at least a silicon-containing insulating layer, a base layer arranged under the silicon-containing insulating layer, and a mask layer arranged on the upper layer of the silicon-containing insulating layer. A step of placing the substrate on which the above is formed on a mounting table in a processing container, a step of supplying a processing gas containing at least one of fluorocarbon gas and hydrofluorocarbon gas, and a material of the silicon-containing insulating layer and the lower part thereof. Depending on the combination with the material of the formation, at least one of the surface temperature ranges of the member in the processing container facing the substrate on the above-mentioned table and the member provided on the outer periphery of the substrate is selected. A step of controlling the surface temperature of at least one of a member facing the substrate and a member provided on the outer periphery of the substrate within the range of the surface temperature selected by the selected step to a desired temperature, and the above-mentioned step. Provided is an etching treatment method comprising a step of generating plasma in the treatment container to which a treatment gas is supplied to etch the silicon-containing insulating layer.

According to one aspect, it is possible to improve the selection ratio of the base layer with respect to the film to be etched.

The sectional schematic diagram which shows an example of the substrate processing apparatus which concerns on embodiment. The figure which shows the laminated film of 3D NAND flash memory. The figure which shows the relationship between the plasma electron temperature and the degree of dissociation of a gas. The figure which shows the relationship between the degree of dissociation of a gas, and the deposition (Depo) rate in each surface of a hole. The figure which shows the temperature of the upper top plate and the like which concerns on embodiment, and an example of a polymer on a substrate. The figure which shows an example of the temperature and the adsorption amount of the upper top plate which concerns on embodiment. The figure which shows an example of the temperature control of the upper top plate and the state of a polymer which concerns on embodiment. An example of a graph of experimental results showing the relationship between the surface temperature of the upper top plate and the loss of the tungsten layer according to the embodiment. The flowchart which shows the etching process method which concerns on embodiment. The flowchart which shows the temperature control method of the upper top plate in the etching process method which concerns on the modification of embodiment. The figure for demonstrating the temperature control method of FIG. The figure which shows an example of the area of the temperature control of the upper top plate which concerns on embodiment.

Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate explanations may be omitted.

[Board processing equipment]
The substrate processing apparatus 1 according to the embodiment will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus 1 according to the embodiment. The substrate processing apparatus 1 is an apparatus that performs predetermined plasma processing on a substrate. The substrate processing apparatus 1 has, for example, a cylindrical processing container 10 made of aluminum whose surface has been anodized. The processing container 10 is grounded. The inside of the processing container 10 is a processing chamber 10s for processing the substrate W.

A mounting table ST is provided at the bottom of the processing container 10. The mounting table ST has a lower electrode plate 16 and an electrostatic chuck 18. The mounting table ST may further have a metal plate 14. In the present embodiment, a columnar metal plate 14 is arranged via an insulating plate 12 made of ceramics or the like, and a lower electrode plate 16 made of, for example, aluminum is provided on the metal plate 14. An electrostatic chuck 18 is provided on the lower electrode plate 16, and a semiconductor wafer (hereinafter, referred to as “substrate W”), which is a substrate to be processed, is placed on the electrostatic chuck 18.

The electrostatic chuck 18 attracts and holds the substrate W by electrostatic force. The electrostatic chuck 18 has a structure in which an electrode 20 made of a conductive film is sandwiched between a pair of insulating layers or insulating sheets, and a DC power supply 22 is electrically connected to the electrode 20. The substrate W is attracted to and held by the electrostatic chuck 18 by the Coulomb force generated by applying a DC voltage from the DC power supply 22 to the electrode 20.

A conductive edge ring (also referred to as a focus ring) 24 made of silicon is arranged on the upper surface of the lower electrode plate so as to surround the outer periphery of the substrate W. On the side surfaces of the lower electrode plate 16 and the metal plate 14, a cylindrical lower outer peripheral insulating ring 26 made of, for example, quartz is provided.

Inside the metal plate 14, for example, a refrigerant flow path 28 is provided on the circumference. The refrigerant flow path 28 is connected to a chiller unit provided outside the processing container 10 via pipes 30a and 30b, and a refrigerant having a predetermined temperature, for example, brine is circulated and supplied. The substrate processing device 1 is configured to be able to control the temperature of the lower electrode plate 16 by controlling the temperature or the flow rate of the refrigerant supplied from the chiller unit to the refrigerant flow path 28.

Further, heat transfer gas from a heat transfer gas supply mechanism (not shown), for example, He gas, is supplied between the upper surface of the electrostatic chuck 18 and the back surface of the substrate W via the gas supply line 32.

Above the mounting table ST, a shower head 34 that faces the mounting table ST and functions as an upper electrode is provided. The shower head 34 and the mounting table ST are configured to be a pair of electrodes as an upper electrode and a lower electrode. The space between the shower head 34 and the mounting table ST in the processing chamber 10s is the plasma generation space.

The shower head 34 is supported on the upper part of the processing container 10 via the upper outer peripheral insulating ring 42. The shower head 34 includes an upper top plate 36 whose lower surface is exposed to the plasma generation space, and a base member 38 that supports the upper top plate 36. The upper outer peripheral insulating ring 42 is an annular member that surrounds the outer periphery of the upper top plate 36 and the base member 38 and is formed of an insulating member.

The upper top plate 36 is formed with a plurality of gas holes 37 for supplying the processing gas in the processing container 10. The upper top plate 36 is made of, for example, silicon (Si) or silicon carbide (SiC).

The base member 38 is made of a conductive material, for example, aluminum whose surface has been anodized, and the upper top plate 36 is detachably supported under the conductive material. A heater 45 for adjusting the surface temperature of the upper top plate 36 is provided in the vicinity of the upper top plate 36 of the base member 38. The heater 45 may be provided on the upper top plate 36. By controlling the heater 45, the surface temperature of the upper top plate 36 is controlled. Inside the base member 38, a gas diffusion space 40 for supplying the processing gas to the plurality of gas holes 37 is formed. At the bottom of the base member 38, a plurality of gas pipes 41 are formed so as to be located at the lower part of the gas diffusion space 40. The plurality of gas pipes 41 communicate with the plurality of gas holes 37, respectively.

The base member 38 is provided with a gas introduction port 62 for introducing the processing gas into the gas diffusion space 40. One end of the gas supply pipe 64 is connected to the gas introduction port 62. A processing gas supply source 66 for supplying the processing gas is connected to the other end of the gas supply pipe 64. The gas supply pipe 64 is provided with a mass flow controller (MFC) 68 and an on-off valve 70 in this order from the upstream side. Then, the processing gas for plasma etching or the like is supplied from the processing gas supply source 66 to the gas diffusion space 40 via the gas supply pipe 64, and is processed from the gas diffusion space 40 through the gas pipe 41 and the gas hole 37. It is supplied in the form of a shower in the container 10.

A refrigerant flow path 92 is formed inside the base member 38. The refrigerant flow path 92 is connected to a chiller unit provided outside the processing container 10 via a pipe, and the refrigerant is circulated and supplied. That is, the shower head 34 constructs a refrigerant circulation system including a refrigerant flow path 92, piping, and a chiller unit as a temperature control mechanism. The chiller unit is configured to be able to control the temperature or flow rate of the refrigerant supplied to the refrigerant flow path 92 by receiving a control signal from the control unit 100 described later. The control unit 100 controls the temperature or flow rate of the refrigerant supplied from the chiller unit to the refrigerant flow path 92. The surface temperature of the upper top plate 36 can also be controlled by controlling the temperature or flow rate of the refrigerant supplied to the refrigerant flow path 92.

A first RF power supply 48 is electrically connected to the shower head 34 as an upper electrode via a low-pass filter (LPF) (not shown), a matching unit 46, and a feeding rod 44. The first RF power supply 48 is a power supply that outputs RF power for plasma excitation, and supplies RF power having a frequency in the range of 13.56 MHz to 100 MHz, for example, 60 MHz, to the shower head 34. The matcher 46 is a matcher that matches the load impedance to the internal (or output) impedance of the first RF power supply 48. The matching unit 46 functions so that the output impedance and the load impedance of the first RF power supply 48 seem to match when plasma is generated in the processing container 10.

Further, a cylindrical ground conductor 10a is provided so as to extend above the height position of the shower head 34 from the side wall of the processing container 10. The top wall portion of the cylindrical ground conductor 10a is electrically insulated from the feeding rod 44 by an insulating tubular member 44a.

A second RF power source 90 is electrically connected to the lower electrode plate 16 via a matching unit 88. The second RF power supply 90 is a power supply that outputs RF power for ion attraction (bias voltage), and supplies RF power having a frequency in the range of 300 kHz to 13.56 MHz, for example, 2 MHz, to the lower electrode plate 16. The matcher 88 is a matcher that matches the load impedance to the internal (or output) impedance of the second RF power supply 90. The matching unit 88 functions so that the internal impedance and the load impedance of the second RF power supply 90 seem to match when plasma is generated in the processing container 10.

An exhaust port 80 is provided at the bottom of the processing container 10, and an exhaust device 84 is connected to the exhaust port 80 via an exhaust pipe 82. The exhaust device 84 has a vacuum pump such as a turbo molecular pump, and can reduce the pressure inside the processing container 10 to a desired degree of vacuum. Further, a carry-in outlet 85 for the substrate W is provided on the side wall of the processing container 10, and the carry-in outlet 85 can be opened and closed by the gate valve 86. Further, a depot shield 11 is detachably provided along the inner wall of the processing container 10 to prevent etching by-products (depots) from adhering to the processing container 10. The depot shield 11 is also provided on the outer periphery of the lower outer peripheral insulating ring 26. An exhaust plate 83 is provided between the depot shield 11 on the side wall side of the processing container 10 and the depot shield 11 on the lower outer peripheral insulating ring 26 side. As the depot shield 11 and the exhaust plate 83 _, those obtained by coating an aluminum material with ceramics such as _Y2O3 can be preferably used.

A conductive member (GND block) 91 connected to the ground in a DC manner is provided at a portion having substantially the same height as the substrate W of the portion constituting the inner wall of the processing container of the depot shield 11. This prevents abnormal discharge.

The operation of the substrate processing apparatus 1 having such a configuration is collectively controlled by the control unit 100. The control unit 100 is, for example, a computer and controls each unit of the substrate processing apparatus 1. The control unit 100 executes an etching process on the substrate W according to the recipe stored in the storage unit. The control unit 100 controls the surface temperature of the upper top plate 36 during the etching process. A thermometer 50 is provided on or near the lower surface of the upper top plate 36. As the thermometer 50, a thermocouple, a thermography, a laser interference thermometer and the like can be used, but the thermometer 50 is not limited thereto. The thermometer 50 measures the surface temperature of the upper top plate 36 (the temperature of the surface facing the mounting table ST or the substrate W), and transmits the measured value of the temperature to the control unit 100. The control unit 100 controls the heating temperature of the heater 45 according to the measured value of the temperature, and controls the surface temperature of the upper top plate 36 to a desired temperature.

In the substrate processing apparatus 1 according to the present embodiment, RF power (high frequency power) for plasma excitation is applied to the shower head 34 from the first RF power supply 48, and from the second RF power supply 90 to the lower electrode plate 16. RF power for ion attraction was applied. However, a first RF power source 48 and a second RF power source 90 may be connected to the lower electrode plate 16 to apply high frequency power for plasma excitation and high frequency power for ion attraction. Further, the first RF power supply 48 may be connected to the shower head 34 or the lower electrode plate 16 without providing the second RF power supply 90, and high frequency power for plasma excitation may be applied.

[Membrane composition on substrate]
Next, the film configuration on the substrate will be described with reference to FIG. FIG. 2 is a diagram showing a laminated film of a 3D NAND flash memory. For example, in the Multi-Level Contact (hereinafter, also referred to as “MLC”), which is one step of 3D NAND, as shown in FIG. 2, the tungsten layer (W) 130 functioning as an electrode is provided with a step at a different depth. It is formed. The silicon oxide layer (SiO ₂ ) 140 on the tungsten layer 130 is etched.

In this example, the tungsten layer 130 and the silicon oxide layer 140 have a laminated structure and form a laminated film. The tungsten layer 130 may have a multi-layer structure such as 60 to 200 layers. The silicon oxide layer 140 is an example of a silicon-containing insulating layer. The tungsten layer 130 is an example of a base layer arranged under the silicon-containing insulating layer.

The mask layer 150 is arranged on the upper layer of the silicon oxide layer 140. The mask layer 150 may be an organic film or may be made of another material. The silicon layer (Si) 110 and the silicon nitride layer (SiN) 120 are formed under the tungsten layer 130 located at different depths.

According to the film configuration, the substrate W is a laminated film having at least a silicon oxide layer 140, a tungsten layer 130 arranged between the silicon oxide layers 140, and a mask layer 150 arranged on the upper layer of the silicon oxide layer 140. Is formed.

The silicon oxide layer 140 on each tungsten layer 130 is etched to the respective depth of the tungsten layer 130. As the generation of device structures progresses, the number of layers will increase further, and the aspect ratio (Aspect Ratio (AR)) will increase accordingly, and it is expected that the etching time will increase.

Therefore, it is necessary to increase the selectivity of the tungsten layer 130 with respect to the silicon oxide layer 140 during long-term etching. In particular, in the tungsten layer 130 located at a shallower position among the plurality of tungsten layers 130, the etching time (over-etching time) after the tungsten layer 130 is exposed becomes long. Therefore, a high selectivity of the tungsten layer 130 with respect to the silicon oxide layer 140 is required. Further, even in structures other than MLC, a process is desired in which the underlying layer has a high selectivity with respect to the film to be etched and the loss of the underlying layer is small.

Therefore, in the etching treatment method according to the present embodiment, the following steps are executed in order to improve the selection ratio of the metal base layer such as the tungsten layer 130. First, in the etching treatment method, the step of placing the substrate W on the mounting table ST in the processing container 10 is executed. The substrate W is formed with a laminated film having at least a silicon-containing insulating layer, a base layer arranged under the silicon-containing insulating layer, and a mask layer arranged on the upper layer of the silicon-containing insulating layer. .. Next, a step of supplying a treatment gas containing at least one of fluorocarbon gas and hydrofluorocarbon gas is executed. Next, by combining the material of the silicon-containing insulating layer and the material of the base layer, among the members in the processing container, the members facing the substrate on the above-mentioned table and the outer periphery of the substrate are provided. A step of selecting a range of at least one surface temperature of the member is performed. Next, the surface temperature of at least one of the member facing the substrate and the member provided on the outer periphery of the substrate is controlled to a desired temperature within the range of the surface temperature selected by the selected step. Next, a step of generating plasma in the processing container 10 to which the processing gas is supplied to etch the silicon-containing insulating layer (here, the silicon oxide layer 140) is executed. The upper top plate 36 is an example of at least one of the members in the processing container 10 that faces the substrate W on the mounting table ST and the members provided on the outer periphery of the substrate W.

The type of CF-based polymer adhering to the substrate W among CF-based radicals and ions contained in the plasma of the treatment gas containing fluorocarbon gas or hydrofluorocarbon gas can be controlled by the surface temperature of the upper top plate 36. Therefore, in the etching treatment method according to the present embodiment, the type of CF polymer adhering to the substrate W is adjusted by controlling the surface temperature of the upper top plate 36. This makes it possible to improve the selectivity of the tungsten layer 130 of the base layer with respect to the silicon oxide layer 140 while maintaining the etching rate of the silicon oxide layer 140, which is an example of the film to be etched.

The processing gas may contain a rare gas. Examples of the rare gas include He gas and Ar gas. Further, in the present specification, the silicon oxide layer 140 will be described as an example as the etching target film, but the etching target film is not limited to this, and any silicon-containing insulating layer may be used. Examples of the silicon-containing insulating layer include at least one and a combination of a silicon oxide layer, a silicon nitride layer, a laminated structure of a silicon oxide layer and a silicon nitride layer, and a Low-K film layer such as an organic-containing silicon oxide.

Further, in the present specification, the tungsten layer 130 will be described as an example as the base layer for the film to be etched, but the base layer is not limited to this and may be a conductive layer. As another example of the conductive layer, it may be a metal layer or a silicon layer. Examples of the metal layer include molybdenum (Mo), titanium (Ti), aluminum (Al), and copper (Cu) in addition to tungsten. Examples of the silicon layer include a silicon-containing layer having conductivity such as polycrystalline silicon (Poly—Si) and non-crystalline silicon. Further, the silicon layer may be a silicon substrate which is single crystal silicon. Further, when the film to be etched is not a silicon nitride layer, a silicon nitride layer may be used as an underlayer that requires a selectivity.

Further, in a process for a structure other than MLC, it may be desired that the underlying layer has a high selectivity with respect to the film to be etched and the loss of the underlying layer is small. In that case, the underlying layer for the film to be etched is not limited to a conductive layer such as a metal layer or a silicon layer. For example, the etching target film may be a silicon oxide film and the base layer may be a silicon nitride film as in the Self-Aligned Contact (SAC) structure. Like the Via structure, the etching target film may be at least one of a silicon oxide layer and a Low—K film layer, and the underlayer may be at least one of a silicon carbide layer and a silicon carbide layer. Similarly, in these cases, it is desired that the loss of the base layer is small, and the etching treatment method of the present embodiment can be applied.

The dissociation of the fluorocarbon gas will be described with reference to FIGS. 3 and 4. FIG. 3 is a diagram showing the relationship between the plasma electron temperature and the degree of gas dissociation. FIG. 4 is a diagram showing the relationship between the degree of gas dissociation and the deposition rate on each surface of the hole.

The horizontal axis of FIG. 3 shows the plasma electron temperature Te, and the relationship between the plasma electron temperature Te and the degree of dissociation of the _{C4 F6} gas is shown. When the plasma electron temperature Te rises, the energy possessed by one electron increases, so that the gas tends to dissociate when the electron and the gas collide, and precursors such as highly dissociated radicals and further ionized ions are likely to be generated. The resulting precursor contributes to polymer deposition. The radical precursor acts isotropically from the plasma to the substrate W, and the ionic precursor acts anisotropically. Further, the precursor deposited on the etching target film contributes as an etchant that promotes etching of the etching target film by interacting with the ions drawn into the substrate W by the high frequency power for attracting ions.

As shown in FIG. 3, when C ₄ F ₆ gas is supplied as fluorocarbon gas into the processing vessel 10, dissociation of C ₄ F ₆ gas is difficult to be promoted when the plasma electron temperature Te is low. In this case, there are many low dissociation precursors (C ₃ F ₄ radicals, C ₃ F ₄ ⁺ ions, etc.) and few high dissociation precursors (CF ₂ radicals, CF ₂ ⁺ ions, etc.). As the plasma electron temperature Te increases, the dissociation of C ₄ F ₆ gas progresses, the CF radicals with high dissociation increase, and the precursor with low dissociation decreases. That is, the number of precursors having a _{high adsorption coefficient (adsorption force) such as C3 F4 and low dissociation decreases, and the number of precursors having a low adsorption coefficient such as CF 2 and high} dissociation increases. However, as shown in FIG. 4, both the high dissociation precursor and the low dissociation precursor are present in the plasma generated in the treatment chamber 10s, and the ratio of the high dissociation precursor and the low dissociation precursor changes.

In addition, although the dissociation pattern of C ₄ F ₆ gas is shown in FIG. 3, as shown in FIG. 4, other than C ₄ F ₈ gas and C ₃ F ₈ gas used as fluorocarbon gas other than C ₄ F ₆ gas. , C ₆ F ₆ gas and C ₅ F ₈ gas also promote dissociation by the plasma electron temperature Te. Dissociation is also promoted by the plasma electron temperature Te in hydrofluorocarbon gases such as C ₂ H ₂ F ₄ gas and C ₃ H ₂ F ₄ gas used in place of fluorocarbon gas or as an additive gas. Depending on the gas type used, precursors such as CF ₃ radicals and CF ₃ ⁺ ions are generated.

Precursors such as C ₂ F ₂ radicals and C ₂ F ⁺ ions, which are in the middle of the process from low dissociation to high dissociation, have characteristics between the low dissociation precursor and the high dissociation precursor. In the present specification, C ₂ F ₂ radicals, C ₂ F ⁺ ions, etc. are included in the low dissociation precursor shown by CxFy (x ≧ 2, y ≧ 1) and highly dissociated by CFz (z ≧ 1). Distinguish from a radical plicasa.

As described above, the low dissociation precursor has a high adsorption coefficient and easily adheres to the upper surface of the mask layer 150 or the upper portion (side surface) of the hole opening. Therefore, the low dissociation precursor is easily consumed on the upper surface and the side surface of the mask layer 150, forms a polymer on the upper surface and the side surface of the mask layer 150, and reaches the bottom surface and the side surface of the hole H formed in the silicon oxide layer 140. It's hard to do.

On the other hand, the highly dissociated precursor has a low adsorption coefficient and is difficult to adhere to the upper surface or the side surface of the mask layer 150. As a result, the highly dissociated precursor is less likely to be consumed on the upper surface or side surface of the mask layer 150, and easily reaches the side surface or bottom surface of the hole H formed in the silicon oxide layer 140. Therefore, the high dissociation precursor is more likely to form a polymer on the side surface and the bottom surface of the hole formed in the silicon oxide layer 140 than the low dissociation precursor, which contributes to improving the selectivity of the tungsten layer 130. do.

In addition to the plasma electron temperature Te, the type of polymer adhering to the substrate W can be controlled by the temperature of the upper top plate 36 and the side wall of the processing container 10 that is sterically visible from the substrate W. FIG. 5 is a diagram showing an example of the temperature of the upper top plate 36 and the side wall (side wall above the substrate W) that can be seen from the substrate W in a solid angle and the type of polymer adhering to the substrate W according to the embodiment.

When the side wall of the processing vessel 10 visible from the upper top plate 36 and / or the substrate W is controlled to a low temperature, as shown in FIG. 5A, a heavy polymer having a large adsorption coefficient and low dissociation such as CxFy is selectively selected. Can be adsorbed on the upper top plate 36 or the side wall. On the other hand, when the side wall of the processing vessel 10 is controlled to a low temperature, a light polymer such as CFz having a small adsorption coefficient and high dissociation can be selectively adsorbed on the tungsten layer 130 (underlayer) of the substrate W.

In this case, as shown in FIG. 5 (c), since the polymer of low dissociation CxFy is difficult to adhere to the mask layer 150, the mask selection ratio is reduced, but the polymer of CFz supplied into the holes is increased, so that tungsten is used. The selectivity of the layer 130 is improved. That is, as shown in FIG. 5A, by controlling the temperature of the upper top plate 36 or the like to a low temperature, the precursors having a low dissociation and a high adsorption coefficient adhering to the substrate W are reduced, and the adsorption coefficient is high with a high dissociation. A low precursor is attached to the substrate W. Since the precursor such as CF ₂ has a low adsorption coefficient, it does not easily adhere to the mask layer 150 and proceeds to the bottom of the hole H. As a result, the opening of the hole H in the mask layer 150 is not narrowed (A'in FIG. 5C), and a large amount of CFz precursor can be supplied to the tungsten layer 130 exposed at the bottom of the hole, and the tungsten layer 130 can be selected. The ratio improves (B'in FIG. 5 (c)).

On the other hand, when the side wall of the processing container 10 visible from the upper top plate 36 and / or the substrate W is controlled to a high temperature, as shown in FIG. 5 (b), the polymer of low dissociation CxFy and the CFz of high dissociation Any of the polymers of the above is adsorbed on the W side of the substrate.

In this case, as shown in FIG. 5D, low dissociation polymers such as C ₂ F ₄ and C ₃ F ₄ having a high adsorption coefficient adhere to the mask layer 150, and the mask selection ratio increases, but the hole H Closing that narrows the opening is likely to occur (A in FIG. 5 (d)). Further, since the opening of the hole H is narrowed, the amount of polymer reaching the bottom of the hole is reduced, and the selection ratio of the tungsten layer 130 is deteriorated (B in FIG. 5D).

[Temperature control of top plate]
Next, a desired temperature of the surface temperature of the upper top plate 36 to be controlled in order to improve the selectivity of the tungsten layer 130 with respect to the silicon oxide layer 140 will be described with reference to FIG. FIG. 6 is a diagram showing an example of the surface temperature and the amount of adsorption of the upper top plate 36 according to the embodiment. The horizontal axis of FIGS. 6 (a) and 6 (b) indicates the surface temperature of the upper top plate 36, and the vertical axis of FIG. 6 (a) indicates the amount of the polymer adsorbed on the upper top plate 36. The vertical axis of (b) shows the adsorption amount of the polymer adsorbed on the substrate W. A ° C. and b ° C. on the horizontal axis are temperatures at which the amount of highly dissociated CFz polymer adsorbed on the upper top plate 36 and the amount of low dissociated CxFy polymer adsorbed on the upper top plate 36 begins to increase when the surface temperature of the upper top plate 36 is lowered. Is.

According to this, when the surface temperature of the upper top plate 36 is higher than b ° C., neither the low dissociation CxFy polymer nor the high dissociation CFz polymer is adsorbed on the upper top plate 36, and these polymers are not adsorbed. Almost adsorbs to the substrate W.

When the surface temperature of the upper top plate 36 is gradually lowered from b ° C., the low dissociation CxFy polymer that is easily adsorbed on the mask layer 150 on the substrate W first adheres to the upper top plate 36. Further, when the surface temperature of the upper top plate 36 is lowered to a ° C., in addition to the polymer of low dissociation CxFy, the polymer of high dissociation CFz that is easily adsorbed on the tungsten layer 130 adheres to the upper top plate 36.

When the surface temperature of the upper top plate 36 is as low as a ° C., both the low dissociation CxFy polymer and the high dissociation CFz polymer are almost adsorbed on the upper top plate 36, and these polymers are adsorbed on the substrate W. It disappears.

To summarize the above, when _C4 F ₈ gas is supplied into the processing container 10 of FIG. 7, when the surface temperature of the upper top plate 36 is higher than b ° C. (in the case of “high temperature” in FIG. 7), low dissociation is achieved. Both the CxFy polymer and the highly dissociated CFz polymer are adsorbed on the substrate W. As a result, the opening of the hole H is narrowed by the polymer of low dissociation CxFy, the polymer of CFz of high dissociation is difficult to be supplied to the bottom of the hole, the selectivity of the tungsten layer 130 is lowered, and the etching rate is lowered. On the other hand, the mask selection ratio becomes good.

On the other hand, when the surface temperature of the upper top plate 36 is lower than a ° C. (in the case of “low temperature” in FIG. 7), both the low dissociation CxFy polymer and the high dissociation CFz polymer are on the upper top plate 36. Adsorbs to. As a result, the low dissociation precursor (C ₃ F ₄ radical, C ₃ F ₄ ⁺ ion, etc.) and the high dissociation precursor (CF ₂ radical, CF ₂ ⁺ ion, etc.) hardly reach the substrate W. This causes a decrease in the etching rate, a decrease in the selection ratio of the tungsten layer 130, and a decrease in the mask selection ratio.

Therefore, by controlling the surface temperature of the upper top plate 36 in the range of a ° C. to b ° C. in the intermediate temperature region shown in FIG. 6 (in the case of “medium temperature” in FIG. 7), it is adsorbed on the upper top plate 36 side. The amount of low-dissociation CxFy polymer increases, and the amount of CxFy polymer adsorbed on the substrate W decreases. Therefore, clogging can be suppressed without narrowing the opening of the hole H. In addition to this, a polymer with high dissociation CFz is supplied to the substrate W to become an etchant, increase the etching rate, adsorb to the bottom of the tungsten layer 130, and improve the selectivity of the tungsten layer 130.

In this way, the surface temperature of the upper top plate 36 is controlled to the temperature in the intermediate temperature region. As a result, CFz radicals and ions effective for obtaining the selectivity of the tungsten layer 130 are transported to the substrate W without being trapped by the upper top plate 36 due to the difference in the adsorption coefficient of the polymer depending on the molecular weight. On the other hand, the radicals and ions of CxFy that cause clogging are controlled to be adsorbed on the upper top plate 36 side. This makes it possible to improve the selectivity of the tungsten layer 130 while maintaining the etching rate of the silicon oxide layer 140. Regarding the mask selection ratio, the mask selection ratio is about the average of the mask selection ratio when the surface temperature of the upper top plate 36 is set to a high temperature of b ° C. or higher and the mask selection ratio when the surface temperature is set to a low temperature of a ° C. or lower. The ratio can be secured.

Further, even in the range of a ° C to b ° C in the intermediate temperature region, by controlling the temperature from a temperature close to a ° C to a temperature close to b ° C, the polymer of low dissociation CxFy adsorbed on the substrate W and the polymer of high dissociation can be separated. It becomes possible to control the proportion of the polymer of CFz.

[Experimental result]
FIG. 8 is an example of a graph of experimental results showing the relationship between the surface temperature of the upper top plate 36 and the loss of the tungsten layer 130 according to the embodiment. The horizontal axis of the graph shows the surface temperature of the upper top plate 36, and the vertical axis shows the loss amount of the tungsten layer 130.

In this experiment, plasma was generated using the substrate processing apparatus 1 based on the following process conditions.
<Process conditions>
Gas type C ₄ F ₆ gas, CO gas, O ₂ Gas treatment chamber pressure 20 mT (2.67 Pa)
High frequency power for plasma excitation 100MHz
High frequency power for ion attraction 3.2MHz

According to this, in order to reduce the loss amount of the tungsten layer 130 to about 24 nm or less, it is preferable to control the surface temperature of the upper top plate 36 in the range of (a) 115 ° C to (b) 270 ° C. all right. Further, it was found that it is preferable to control the surface temperature of the upper top plate 36 in the range of (a) 160 ° C. to (b) 230 ° C. in order to reduce the loss amount of the tungsten layer 130 to about 10 nm or less.

The result of this experiment is a case where a substrate on which a silicon oxide layer 140 is formed as an etching target film and a tungsten layer 130 is formed as a base layer is used as a laminated film. Depending on the film type, the etchant that promotes etching of the film to be etched and the precursor that is the polymer that improves the selectivity with the underlying film may differ slightly, so the range of the preferred surface temperature of the upper top plate 36 also shifts slightly. In some cases. In this case, an experiment using the film type of the laminated film actually used, or using a simulator that can calculate the formation of precursors and the surface reaction with the laminated film, is preferable according to the film type of the laminated film. It is desirable to find the range.

Further, since the dissociation pattern differs depending on the gas type used, the range of the preferable surface temperature of the upper top plate 36 may be slightly shifted. It should be noted that the present invention relates to an appropriate surface temperature range of the upper top plate 36 depending on the combination of the film types of the etching target film (silicon-containing insulating layer) and the base film, and the combination of the film types combined with the gas type. Information is obtained in advance by experiments or the like. Then, the obtained information is stored in the storage unit of the control unit 100 and stored in a database. Thereby, a ° C. and b ° C. can be determined in the step (step S2) of selecting the range of the surface temperature of the upper top plate 36 described later based on the information with reference to the storage unit that stores the information.

[Etching method]
Based on the above, the etching processing method performed in the substrate processing apparatus 1 while controlling the surface temperature of the upper top plate 36 in the range of a ° C. to b ° C. in the intermediate temperature region by the control unit 100 will be described with reference to FIG. do. FIG. 9 is a flowchart showing the etching processing method according to the embodiment. As a result, when the silicon oxide layer 140, which is the film to be etched, is etched, the loss amount of the tungsten layer 130 can be reduced to about 10 nm or less, and the selectivity of the tungsten layer 130 with respect to the silicon oxide layer 140 can be improved.

When this treatment is started, first, the substrate W on which the silicon layer 110, the tungsten layer 130 having a plurality of staggered layers, the silicon oxide layer 140 as the etching target film, and the mask layer 150 are laminated in this order is formed. It is carried into the processing container 10 and placed on the mounting table ST (step S1).

Next, the surface temperature of the upper top plate 36 is selected in the range of a ° C. to b ° C. in the intermediate temperature region according to the combination of the etching target film of the laminated film formed on the substrate W and the film type of the underlying film. (Step S2). As shown in [Experimental Results] and FIG. 8, when the silicon oxide layer 140 is formed as the etching target film as the laminated film and the tungsten layer 130 is formed as the underlayer, the surface temperature of the upper top plate 36 is (a) from 160 ° C. (B) The range of 230 ° C. is selected. If the film type is known in advance, step S2 may be executed before step S1 or may be executed at the same time as step S1.

Next, the surface temperature of the upper top plate 36 is controlled to the first temperature within the temperature range selected in step 2 (step S3). The first temperature is a preset temperature in the range of (a) 160 ° C. to (b) 230 ° C.

Next, a processing gas containing a fluorocarbon gas (C _x F _y gas) such as C ₄ F ₆ gas is supplied into the processing container 10 (step S4). Next, high-frequency power for plasma excitation and high-frequency power for ion attraction are applied to generate a treated gas plasma containing fluorocarbon gas (step S5). In step S4, only high frequency power for plasma excitation may be applied.

Next, the silicon oxide layer 140, which is the film to be etched, is etched (step S6). While etching the silicon oxide layer 140, the surface temperature of the upper top plate 36 is controlled in the range of (a) 160 ° C. to (b) 230 ° C. As an example, as shown in step S61, the surface temperature of the upper top plate 36 is set in advance in the range of (a) 160 ° C. to (b) 230 ° C., which is a temperature different from the first temperature and the first temperature. The temperature may be alternately and repeatedly controlled between the second temperature (for example, the first temperature> the second temperature). When the etching process of the silicon oxide layer 140 is completed, this process is completed.

According to the etching treatment method according to the embodiment, the surface temperature of the upper top plate 36 is controlled in the range of (a) 160 ° C. to (b) 230 ° C. while the silicon oxide layer 140 is being etched. Thereby, the radicals and ions of highly dissociated CFz, which are effective for obtaining the selectivity of the tungsten layer 130, are controlled so as not to be trapped by the upper top plate 36 but mainly transported to the substrate W. Further, the radicals and ions of low dissociation CxFy that cause clogging are controlled so as to be mainly adsorbed on the upper top plate 36 side. This makes it possible to improve the selectivity of the tungsten layer 130 while maintaining the etching rate of the silicon oxide layer 140.

Further, by repeatedly controlling the surface temperature of the upper top plate 36 alternately to the first temperature and the second temperature in the range of (a) 160 ° C. to (b) 230 ° C., CFz radicals and ions and CxFy radicals and The ratio of traps of ions to the upper top plate 36 can be varied. This makes it possible to finely adjust the etching rate of the silicon oxide layer 140 and the selection ratio of the tungsten layer 130.

[Modification example]
Next, the temperature control method of the upper top plate 36 in the etching processing method according to the modified example of the present embodiment will be described with reference to FIGS. 10 and 11. FIG. 10 is a flowchart showing a temperature control method of the upper top plate 36 in the etching processing method according to the modified example of the embodiment. FIG. 11 is a diagram for explaining the temperature control method of FIG.

In this modification, during the etching of the silicon oxide layer 140 in step S6 shown in FIG. 9, the temperature control method of the upper top plate 36 shown in FIG. 10 is executed instead of step S61. The temperature control method of FIG. 10 is controlled by the control unit 100.

In FIG. 10, a case where the silicon oxide layer 140 is etched in the laminated film having the three tungsten layers 130 shown in FIG. 2 will be described. The first-stage tungsten layer 130 is set as a shallow region, the second-stage tungsten layer 130 is set as an intermediate region between the shallow region and the deep region, and the third-stage tungsten layer 130 is preset as a deep region. However, the structure of the laminated film is simplified for convenience of explanation, and is not limited to this.

When the process of step S6 of FIG. 9 is started and the temperature control method of FIG. 10 is executed, it is first determined whether or not the shallow region of the silicon oxide layer 140 is etched (step S11). It is determined that the shallow region of the silicon oxide layer 140 is being etched while the first-stage tungsten layer 130 is being etched. In this case, the surface temperature of the upper top plate 36 is gradually or continuously raised in the range of (a) ° C to (b) ° C (step S12).

In the example of FIG. 11A, in the case of etching the shallow region up to the tungsten layer 130 of the first stage of the three stages (N = 3), the upper top plate 36 on the vertical axis with respect to the processing time on the horizontal axis. The surface temperature of (a) ° C., (a) ° C. + α, and (b) ° C. is raised in three stages. As a result, the surface temperature of the upper top plate 36 is controlled to (a) ° C. in the early stage of etching in the shallow region, and radicals and ions of low dissociation CxFy are easily trapped in the upper top plate 36. As a result, the radicals and ions of CFz having a low adsorption coefficient and high dissociation are carried to the bottom of the hole without narrowing the opening of the hole H, and the selectivity of the tungsten layer 130 is improved mainly by the polymer of CFz.

After that, the surface temperature of the upper top plate 36 is gradually increased, and at the end of etching in a shallow region, the surface temperature of the upper top plate 36 is controlled to (b) ° C., and radicals and ions of CxFy are transferred to the substrate W side. transport. As a result, the polymer of CxFy is adhered to the opening of the hole H, and the mask selection ratio is improved.

Then, when the first-stage tungsten layer 130 is etched, it is determined as "No" in step S11, and the etching of the shallow region of the silicon oxide layer 140 is completed. Next, it is determined whether or not the deep region of the silicon oxide layer 140 is etched (step S13). It is determined that the deep region of the silicon oxide layer 140 is not etched (that is, the region between the shallow region and the deep region is etched) while the tungsten layer 130 of the second stage is etched.

At this time, the surface temperature of the upper top plate 36 is controlled to (a) + α ° C. in the range of (a) ° C. to (b) ° C. (step S14). For example, the surface temperature of the upper top plate 36 may be controlled so as to maintain the temperature last controlled in step S12, or may be controlled to another temperature in the range of (a) ° C to (b) ° C. You may.

When it is determined that the etching to the tungsten layer 130 of the third stage is started and the deep region of the silicon oxide layer 140 is etched, the upper part is stepwise or continuously in the range of (a) ° C to (b) ° C. The surface temperature of the top plate 36 is lowered (step S15).

In the example of FIG. 11B, in the case of etching a deep region up to the tungsten layer 130 of the third stage of the three stages (N = 3), the surface temperature of the upper top plate 36 on the vertical axis is set to (b) ° C. , (A) ° C + α and (a) ° C. As a result, the effect of the early stage of etching described in the etching of the shallow region can be obtained as the effect of the final stage of etching. In addition, the effect at the end of etching described in the etching of a shallow region can be obtained as the effect at the beginning of etching.

According to this modification, by controlling the surface temperature of the upper top plate 36 in the range of (a) ° C to (b) ° C, the etching rate is maintained and the loss of the tungsten layer 130 is suppressed. At that time, the surface temperature of the upper top plate 36 is variably controlled according to the depth of the etched silicon oxide layer 140. For example, the surface temperature of the upper top plate 36 may be controlled so that the temperature increases as the depth of the etched silicon oxide layer 140 becomes shallower. Further, in a region where the depth of the etched silicon oxide layer 140 is deep, the temperature may be controlled to be lowered as the depth becomes deeper. Thereby, the state of the polymer on the substrate W can be finely adjusted by the temperature control that emphasizes the selectivity of the tungsten layer 130 and the temperature control that emphasizes the mask selectivity. The surface temperature of the upper top plate 36 is not limited to gradually increasing or decreasing, and may be continuously increased or decreased.

As described above, according to the etching processing method and the substrate processing apparatus 1 according to the present embodiment and the modification, the surface temperature of the upper top plate 36 is controlled to a desired range. Specifically, during the etching process, the surface temperature of the upper top plate 36 is controlled to a desired temperature in the range of (a) ° C to (b) ° C. This makes it possible to control the amount of highly dissociated CFz radicals and ions trapped on the upper top plate 36 side to obtain the selectivity of the tungsten layer 130 and the low dissociated CxFy radicals and ions that cause clogging. .. This makes it possible to improve the selectivity of the tungsten layer 130 while maintaining the etching rate of the silicon oxide layer 140.

Further, as a secondary effect, the flow rate of the O ₂ gas in the processing gas can be reduced or the addition of the O ₂ gas can be eliminated. Conventionally, O ₂ gas is added to the processing gas, and the plasma of the O ₂ gas suppresses the clogging in the vicinity of the mask layer 150. However, according to the etching treatment method according to the present embodiment and the modified example, by controlling the surface temperature of the upper top plate 36 to a desired range, radicals and ions of CxFy having low dissociation are mainly on the upper top plate 36 side. Can be trapped in. This makes it possible to prevent the hole opening from being narrowed by the CxFy polymer. Further, by adjusting the flow rate of the O ₂ gas in the processing gas, the opening of the hole H can be finely adjusted, and the selection ratio of the tungsten layer 130 can be further improved.

[Temperature control for each area]
The upper top plate 36 has a disk shape, and the temperature of each of the plurality of regions of the upper top plate 36 can be controlled independently. FIG. 12 is a diagram showing an example of a region of temperature control of the upper top plate 36 according to the embodiment. 12 (a), (b) and (c) show an example in which the lower surface of the upper top plate 36 is divided into a plurality of temperature control regions.

In FIG. 12A, the upper top plate 36 is divided into a central region 36a and an outer peripheral region 36b in the radial direction, and each region of the upper top plate 36 is divided by heaters 45 provided in each of the region 36a and the region 36b. Temperature control separately. As a result, it is possible to reduce the deviation of the temperature distribution in the radial direction of the upper top plate 36 and improve the in-plane uniformity of the temperature distribution of the upper top plate 36.

In FIG. 12B, the upper top plate 36 is divided into a central region 36a in the radial direction and an outer peripheral region, and the outer peripheral region is divided into a plurality of regions 36b1 to 36b8 in the circumferential direction. Then, the temperature of each region is controlled separately by the heaters 45 provided in each of the region 36a and the plurality of regions 36b1 to 36b8. As a result, the deviation of the temperature distribution in the radial direction of the upper top plate 36 and the deviation of the temperature distribution in the circumferential direction on the outer peripheral side can be reduced, and the in-plane uniformity of the temperature distribution of the upper top plate 36 can be further improved.

In FIG. 12 (c), the upper top plate 36 is divided into a plurality of grid-shaped regions 36c, and the temperature of each region is controlled separately by a heater 45 provided in each of the plurality of regions 36c. This also makes it possible to improve the in-plane uniformity of the temperature distribution of the upper top plate 36.

However, the temperature control region of the upper top plate 36 is not limited to this. For example, in FIG. 12A, the upper top plate 36 is divided into two regions in the radial direction, but the temperature may be controlled by dividing the upper top plate 36 into three or more regions in the radial direction. Further, in FIG. 12B, the outer peripheral region is divided in the circumferential direction, but both the central and outer peripheral regions may be divided into a plurality of regions, or only the inner peripheral side may be divided into a plurality of regions. .. Further, in FIG. 12 (c), the upper top plate 36 is divided into a grid pattern, but the shape for dividing the upper top plate 36 is not limited to a rectangle, and is a polygon other than a quadrangle such as a triangle or a honeycomb shape. You may.

It should be considered that the etching treatment method and the substrate treatment apparatus according to the embodiments and modifications disclosed this time are exemplary in all respects and are not restrictive. The above embodiment can be modified and improved in various forms without departing from the scope of the attached claims and the gist thereof. The matters described in the plurality of embodiments may have other configurations within a consistent range, and may be combined within a consistent range.

For example, the member in the processing container 10 subject to temperature control in the etching processing method of the present disclosure is not limited to the upper top plate 36. The member in the processing container 10 subject to temperature control may be at least one of a member facing the substrate W and a member provided on the outer periphery of the substrate. For example, as an example of the member facing the substrate W to be temperature controlled, the upper top plate 36 and the upper outer peripheral insulating ring 42 on the outer periphery of the upper top plate 36 can be mentioned. As an example of the members provided on the outer periphery of the substrate to be temperature controlled, the edge ring 24 arranged on the outer periphery of the substrate W, the lower outer peripheral insulating ring 26 arranged on the outer periphery of the edge ring 24, and the depot shield 11 are included. Can be mentioned. Further, the member of the processing container 10 subject to temperature control may be a part (for example, an inner peripheral region and an outer peripheral region) when the upper top plate 36 is divided into a plurality of regions.

The substrate processing apparatus of the present disclosure is any type of apparatus: Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma (HWP). But it is applicable.

1 Substrate processing device 10 Processing container 10s Processing chamber 11 Depot shield 14 Metal plate 16 Lower electrode plate 18 Electrostatic chuck 24 Edge ring 26 Lower outer peripheral insulating ring 34 Shower head 36 Upper top plate 38 Base member 42 Upper outer peripheral insulating ring 45 Heater 48 First RF power supply 50 Thermometer 90 Second RF power supply 130 Tungsten layer 140 Silicon oxide layer ST mounting table

Claims (16)

A substrate on which a laminated film having at least a silicon-containing insulating layer, a base layer arranged under the silicon-containing insulating layer, and a mask layer arranged on the upper layer of the silicon-containing insulating layer is formed is placed in a processing container. And the process of placing it on the mounting table
A step of supplying a treatment gas containing at least one of fluorocarbon gas and hydrofluorocarbon gas, and
Depending on the combination of the material of the silicon-containing insulating layer and the material of the base layer, at least one of the members in the processing container facing the substrate on the above-mentioned table and the member provided on the outer periphery of the substrate. The process of selecting one of the surface temperature ranges and
A step of controlling the surface temperature of at least one of a member facing the substrate and a member provided on the outer periphery of the substrate within the range of the surface temperature selected by the selected step to a desired temperature.
It comprises a step of generating plasma in the processing container to which the processing gas is supplied to etch the silicon-containing insulating layer.
Etching processing method characterized by that. The surface temperature of the member is variably controlled according to the depth of the etched silicon-containing insulating layer.
The etching treatment method according to claim 1. The surface temperature of the member is controlled so as to increase as the etching depth becomes deeper in a shallow region where the depth of the etched silicon-containing insulating layer is predetermined, and the depth of the silicon-containing insulating layer is predetermined. In deep regions, the etching depth is controlled to decrease as it gets deeper.
The etching treatment method according to claim 2. The surface temperature of the member is alternately and repeatedly controlled between a predetermined first temperature and a second temperature different from the first temperature.
The etching treatment method according to any one of claims 1 to 3. The member is a member facing the substrate.
The etching treatment method according to any one of claims 1 to 4. The member is an upper top plate.
The etching treatment method according to claim 5. The upper top plate is disk-shaped and has a disk shape.
The surface temperature of the upper top plate is independently controlled for each region in which the surface of the upper top plate facing the previously described table is divided into a plurality of regions in advance.
The etching treatment method according to claim 6. The silicon-containing insulating layer is formed of at least one of a silicon oxide layer, a silicon nitride layer, a laminated structure of a silicon oxide layer and a silicon nitride layer, and a Low-K film layer.
The etching treatment method according to any one of claims 1 to 7. The base layer is a conductive layer.
The etching treatment method according to any one of claims 1 to 8. The conductive layer is formed of a metal layer or a silicon layer.
The etching treatment method according to claim 9. The metal layer is made of tungsten.
The etching treatment method according to claim 10. The silicon-containing insulating layer is formed of a silicon oxide layer, and the silicon-containing insulating layer is formed of a silicon oxide layer.
The base layer is formed of a silicon nitride layer.
The etching treatment method according to any one of claims 1 to 7. The silicon-containing insulating layer is formed of at least one of a silicon oxide layer and a Low-K film layer.
The underlayer is formed of at least one of a silicon carbide layer and a silicon carbide layer.
The etching treatment method according to any one of claims 1 to 7. The silicon-containing insulating layer is formed of a silicon oxide layer, and the silicon-containing insulating layer is formed of a silicon oxide layer.
The underlayer is made of tungsten and is made of tungsten.
The surface temperature of the member is set to a desired temperature in the range of 115 ° C to 270 ° C.
The etching treatment method according to any one of claims 1 to 9. The surface temperature of the member is set to a desired temperature in the range of 160 ° C to 230 ° C.
The etching treatment method according to claim 14. With the processing container
A substrate on which a laminated film having at least a silicon-containing insulating layer, a base layer arranged under the silicon-containing insulating layer, and a mask layer arranged on the upper layer of the silicon-containing insulating layer is placed is placed. With a stand,
A substrate processing device having a control unit and
The control unit
The process of placing the substrate on the above-mentioned table and
A step of supplying a treatment gas containing at least one of fluorocarbon gas and hydrofluorocarbon gas, and
Depending on the combination of the material of the silicon-containing insulating layer and the material of the base layer, at least one of the members in the processing container facing the substrate on the above-mentioned table and the member provided on the outer periphery of the substrate. The process of selecting one of the surface temperature ranges and
A step of controlling the surface temperature of at least one of a member facing the substrate and a member provided on the outer periphery of the substrate within the range of the surface temperature selected by the selected step to a desired temperature.
Controlling a step including a step of generating plasma in the treatment container to which the treatment gas is supplied to etch the silicon-containing insulating layer.
Board processing equipment.

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