JP2022038644A - Substrate processing apparatus - Google Patents

Abstract

To provide a substrate processing apparatus for stably performing etching treatment with an aqueous phosphoric acid solution to which an additive is added.SOLUTION: In a substrate processing apparatus, a treatment tank 61 includes an inner tank 111, an outer tank 112, a lid 113, and a wetted member 114. The inner tank 111 has an opening 111a at the upper portion, and the substrate is immersed in a treatment liquid L. The outer tank 112 is arranged outside the inner tank 111 and receives a treatment liquid L flowing out from the opening 111a. The lid 113 opens and closes the opening 111a. The wetted member 114 has hydrophobicity and is arranged at a position where the treatment liquid L containing bubbles comes into contact with the treatment liquid L when the treatment liquid L flows out from the inner tank 111 to the outer tank 112.SELECTED DRAWING: Figure 3

Description

The disclosed embodiment relates to a substrate processing apparatus.

Conventionally, in a substrate processing system, there is known a technique of immersing a substrate in a phosphoric acid aqueous solution to which an additive is added to perform an etching treatment on the substrate (see Patent Document 1).

JP-A-2019-67995

The present disclosure provides a technique capable of stably performing an etching treatment with an aqueous phosphoric acid solution to which an additive is added.

The substrate processing apparatus according to one aspect of the present disclosure includes an inner tank, an outer tank, a lid, and a wetted member. The inner tank has an opening at the top, and the substrate is immersed in the treatment liquid. The outer tank is arranged outside the inner tank and receives the treatment liquid flowing out from the opening. The lid opens and closes the opening. The wetted member has hydrophobicity and is arranged at a position where the treated liquid containing bubbles comes into contact with the treated liquid when it flows out from the inner tank to the outer tank.

According to the present disclosure, the etching treatment with the phosphoric acid aqueous solution to which the additive is added can be stably carried out.

FIG. 1 is a schematic block diagram showing a configuration of a substrate processing system according to an embodiment. FIG. 2 is a schematic block diagram showing the configuration of the etching processing apparatus according to the embodiment. FIG. 3 is an enlarged cross-sectional view showing the configuration of the treatment tank according to the embodiment. FIG. 4A is a diagram for explaining a defoaming mechanism of bubbles by a hydrophobic wetted member. FIG. 4B is a diagram for explaining a defoaming mechanism of bubbles by a hydrophobic wetted member. FIG. 4C is a diagram for explaining a defoaming mechanism of bubbles by a hydrophobic wetted member. FIG. 4D is a diagram for explaining a defoaming mechanism of bubbles by a hydrophobic wetted member. FIG. 5 is a plan view showing an example of the arrangement of the wetted parts in the treatment tank according to the embodiment. FIG. 6 is a plan view showing another example of the arrangement of the wetted member in the treatment tank according to the embodiment. FIG. 7 is an enlarged cross-sectional view showing the configuration of the treatment tank according to the first modification of the embodiment. FIG. 8 is a plan view showing an example of the arrangement of the wetted member in the treatment tank according to the first modification of the embodiment. FIG. 9 is a plan view showing another example of the arrangement of the wetted member in the treatment tank according to the first modification of the embodiment. FIG. 10 is a perspective view showing another example of the shape of the wetted member according to the first modification of the embodiment. FIG. 11 is a perspective view showing another example of the shape of the wetted member according to the first modification of the embodiment. FIG. 12 is an enlarged cross-sectional view showing the configuration of the treatment tank according to the second modification of the embodiment. FIG. 13 is a plan view showing an example of the arrangement of the wetted parts in the treatment tank according to the second modification of the embodiment. FIG. 14 is an enlarged cross-sectional view showing the configuration of the treatment tank according to the third modification of the embodiment. FIG. 15 is a plan view showing an example of the arrangement of the wetted member in the treatment tank according to the third modification of the embodiment. FIG. 16 is an enlarged cross-sectional view showing the configuration of the treatment tank according to the modified example 4 of the embodiment. FIG. 17 is a plan view showing an example of the arrangement of the wetted member in the treatment tank according to the modified example 4 of the embodiment. FIG. 18 is a perspective view showing an example of the shape of the wetted member according to the modified example 4 of the embodiment. FIG. 19 is a perspective view showing an example of another shape of the wetted member according to the modified example 4 of the embodiment. FIG. 20 is a perspective view showing an example of another shape of the wetted member according to the modified example 4 of the embodiment. FIG. 21 is a perspective view showing the configuration of the substrate elevating mechanism according to the modified example 5 of the embodiment. FIG. 22 is an enlarged cross-sectional view showing the configuration of the substrate processing unit according to the modified example 5 of the embodiment.

Hereinafter, embodiments of the substrate processing apparatus disclosed in the present application will be described in detail with reference to the accompanying drawings. The present disclosure is not limited to the embodiments shown below. In addition, it should be noted that the drawings are schematic, and the relationship between the dimensions of each element, the ratio of each element, etc. may differ from the reality. Further, there may be a portion where the relations and ratios of the dimensions of the drawings are different from each other.

Conventionally, in a substrate processing system, there is known a technique of immersing a substrate in a phosphoric acid aqueous solution to which an additive is added to perform an etching treatment on the substrate.

For example, by immersing the substrate in an aqueous solution of phosphoric acid (H ₃ PO ₄ ), the silicon nitride film is selectively etched out of the silicon nitride film (SiN) and the silicon oxide film (SiO ₂ ) laminated on the substrate. can do.

Further, by adding a silicon solution containing silicon to the phosphoric acid aqueous solution, the etching selectivity of the silicon nitride film can be improved. Further, by adding an additive that suppresses the precipitation of silicon oxide (hereinafter, also referred to as “precipitation inhibitor”) to the phosphoric acid aqueous solution, the silicon oxide is deposited on the silicon oxide film during the etching treatment. Can be suppressed.

However, in the above-mentioned conventional technique, the alcohol used as a solvent in the above-mentioned additive boils in the high-temperature etching solution, so that a large amount of bubbles may be generated in the etching solution.

Furthermore, since the etching solution contains alcohol that functions as a surfactant, the bubbles once generated do not easily disappear, and the etching solution containing a large amount of bubbles may overflow from the treatment tank. rice field.

As a result, the amount of liquid in the treated layer is greatly reduced, which may make it difficult to stably carry out the etching treatment.

Therefore, it is expected to realize a technique capable of overcoming the above-mentioned problems and stably performing the etching treatment with the phosphoric acid aqueous solution to which the additive is added.

<Configuration of board processing system>
First, the configuration of the substrate processing system 1 according to the embodiment will be described with reference to FIG. FIG. 1 is a schematic block diagram showing a configuration of a substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus.

As shown in FIG. 1, the substrate processing system 1 according to the embodiment is controlled by a carrier loading / unloading unit 2, a lot forming unit 3, a lot loading unit 4, a lot transport unit 5, and a lot processing unit 6. A unit 7 is provided.

The carrier loading / unloading section 2 includes a carrier stage 20, a carrier transport mechanism 21, carrier stocks 22 and 23, and a carrier mounting table 24.

The carrier stage 20 mounts a plurality of carriers 9 transported from the outside. The carrier 9 is a container for accommodating a plurality of (for example, 25) wafers W side by side in a horizontal posture. The carrier transfer mechanism 21 transfers the carrier 9 between the carrier stage 20, the carrier stocks 22 and 23, and the carrier mounting table 24.

From the carrier 9 mounted on the carrier mounting table 24, a plurality of wafers W before being processed are carried out to the lot processing unit 6 by the substrate transfer mechanism 30 described later. Further, a plurality of processed wafers W are carried into the carrier 9 mounted on the carrier mounting table 24 from the lot processing unit 6 by the substrate transfer mechanism 30.

The lot forming unit 3 has a substrate transfer mechanism 30 and forms a lot. The lot is composed of a plurality of (for example, 50) wafers W that are simultaneously processed by combining the wafers W accommodated in one or a plurality of carriers 9. A plurality of wafers W forming one lot are arranged at regular intervals with their plate surfaces facing each other.

The substrate transfer mechanism 30 transfers a plurality of wafers W between the carrier 9 mounted on the carrier mounting table 24 and the lot mounting portion 4.

The lot loading unit 4 has a lot transfer table 40, and temporarily stores (stands by) a lot transferred between the lot forming unit 3 and the lot processing unit 6 by the lot transport unit 5. The lot transfer table 40 includes a carry-in side loading table 41 formed by the lot forming unit 3 on which the unprocessed lot is placed, and a carry-out side loading table 42 on which the lot processed by the lot processing unit 6 is placed. Has. A plurality of wafers W for one lot are placed side by side in an upright position on the loading-in side mounting table 41 and the carrying-out side mounting table 42.

The lot transfer unit 5 has a lot transfer mechanism 50, and transfers lots between the lot loading unit 4 and the lot processing unit 6 or inside the lot processing unit 6. The lot transfer mechanism 50 includes a rail 51, a moving body 52, and a substrate holding body 53.

The rail 51 is arranged along the X-axis direction across the lot loading section 4 and the lot processing section 6. The moving body 52 is configured to be movable along the rail 51 while holding a plurality of wafers W. The substrate holding body 53 is arranged on the moving body 52 and holds a plurality of wafers W arranged in a standing position in the front-rear direction.

The lot processing unit 6 collectively performs etching processing, cleaning processing, drying processing, and the like on a plurality of wafers W for one lot. In the lot processing unit 6, two etching processing devices 60, a cleaning processing device 70, a cleaning processing device 80, and a drying processing device 90 are arranged side by side along the rail 51.

The etching processing apparatus 60 collectively performs etching processing on a plurality of wafers W for one lot. The cleaning processing apparatus 70 collectively performs cleaning processing on a plurality of wafers W for one lot. The cleaning processing apparatus 80 cleans the substrate holder 53. The drying processing apparatus 90 collectively performs drying processing on a plurality of wafers W for one lot. The number of the etching processing device 60, the cleaning processing device 70, the cleaning processing device 80, and the drying processing device 90 is not limited to the example of FIG.

The etching processing apparatus 60 includes a processing tank 61 for etching processing, a processing tank 62 for rinsing processing, and substrate elevating mechanisms 63 and 64.

The processing tank 61 can accommodate one lot of wafers W arranged in an upright position, and stores a chemical solution for etching processing (hereinafter, also referred to as “etching solution”). The details of the treatment tank 61 will be described later.

A treatment liquid (deionized water or the like) for rinsing treatment is stored in the treatment tank 62. A plurality of wafers W forming a lot are held side by side in an upright posture on the substrate elevating mechanisms 63 and 64.

The etching processing apparatus 60 holds the lot transferred by the lot transfer unit 5 by the substrate elevating mechanism 63 and immerses it in the etching solution of the processing tank 61 to perform the etching process. The etching process is performed, for example, for about 1 hour to 3 hours.

The lot etched in the processing tank 61 is transferred to the processing tank 62 by the lot transfer unit 5. Then, the etching processing apparatus 60 holds the conveyed lot by the substrate elevating mechanism 64 and immerses it in the rinsing liquid of the processing tank 62 to perform the rinsing process. The lot rinsed in the processing tank 62 is transferred to the processing tank 71 of the cleaning processing device 70 by the lot transfer unit 5.

The cleaning processing apparatus 70 includes a processing tank 71 for cleaning, a processing tank 72 for rinsing processing, and substrate elevating mechanisms 73 and 74. A cleaning chemical solution (hereinafter, also referred to as “cleaning chemical solution”) is stored in the cleaning treatment tank 71. The cleaning chemical solution is, for example, SC-1 (mixture of ammonia, hydrogen peroxide and water).

A treatment liquid (deionized water or the like) for rinsing treatment is stored in the treatment tank 72 for rinsing treatment. A plurality of wafers W for one lot are held side by side in an upright posture on the substrate elevating mechanisms 73 and 74.

The cleaning processing device 70 performs cleaning processing by holding the lot transferred by the lot transfer unit 5 by the substrate elevating mechanism 73 and immersing it in the cleaning liquid of the processing tank 71.

The lot washed in the processing tank 71 is transferred to the processing tank 72 by the lot transfer unit 5. Then, the cleaning processing device 70 holds the conveyed lot in the substrate elevating mechanism 74 and immerses it in the rinsing liquid of the processing tank 72 to perform the rinsing process. The lot rinsed in the processing tank 72 is transferred to the processing tank 91 of the drying processing apparatus 90 by the lot transfer unit 5.

The drying processing device 90 includes a processing tank 91 and a substrate elevating mechanism 92. A processing gas for drying processing is supplied to the processing tank 91. A plurality of wafers W for one lot are held side by side in an upright posture in the substrate elevating mechanism 92.

The drying processing apparatus 90 holds the lot transported by the lot transport unit 5 by the substrate elevating mechanism 92, and performs the drying treatment using the processing gas for the drying treatment supplied in the processing tank 91. The lot that has been dried in the processing tank 91 is transferred to the lot loading unit 4 by the lot transfer unit 5.

The cleaning processing apparatus 80 supplies a processing liquid for cleaning to the substrate holding body 53 of the lot transfer mechanism 50, and further supplies a drying gas to perform cleaning processing of the substrate holding body 53.

The control unit 7 controls the operation of each unit of the substrate processing system 1 (carrier loading / unloading unit 2, lot forming unit 3, lot loading unit 4, lot transport unit 5, lot processing unit 6, etc.). The control unit 7 controls the operation of each unit of the board processing system 1 based on signals from switches, various sensors, and the like.

The control unit 7 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits. The control unit 7 controls the operation of the substrate processing system 1 by reading and executing a program stored in a storage unit (not shown).

The control unit 7 has a storage medium 8 that can be read by a computer. The storage medium 8 stores the above-mentioned program that controls various processes executed in the substrate processing system 1. The program may be stored in a storage medium 8 readable by a computer, and may be installed in the storage medium 8 of the control unit 7 from another storage medium.

Examples of the storage medium 8 readable by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

<Structure of etching processing equipment>
Next, the configuration of the etching processing apparatus 60 that performs the etching processing of the wafer W will be described with reference to FIG. 2. FIG. 2 is a schematic block diagram showing the configuration of the etching processing apparatus 60 according to the embodiment.

The etching processing apparatus 60 includes an etching liquid supply unit 100 and a substrate processing unit 110. The etching solution supply unit 100 generates an etching solution L and supplies it to the substrate processing unit 110. The etching solution L is an example of a processing solution.

The etching liquid supply unit 100 includes a phosphoric acid aqueous solution supply unit 101, a silicon solution supply unit 102, a precipitation inhibitor supply unit 103, a mixing mechanism 104, an etching liquid supply path 105, and a flow rate regulator 106.

The phosphoric acid aqueous solution supply unit 101 supplies the phosphoric acid aqueous solution to the mixing mechanism 104. The phosphoric acid aqueous solution supply unit 101 includes a phosphoric acid aqueous solution supply source 101a, a phosphoric acid aqueous solution supply path 101b, and a flow rate regulator 101c.

The phosphoric acid aqueous solution supply source 101a is, for example, a tank for storing the phosphoric acid aqueous solution. The phosphoric acid aqueous solution supply path 101b connects the phosphoric acid aqueous solution supply source 101a and the mixing mechanism 104, and supplies the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply source 101a to the mixing mechanism 104.

The flow rate regulator 101c is arranged in the phosphoric acid aqueous solution supply path 101b and adjusts the flow rate of the phosphoric acid aqueous solution supplied to the mixing mechanism 104. The flow rate regulator 101c includes an on-off valve, a flow rate control valve, a flow meter, and the like.

The silicon solution supply unit 102 supplies the silicon solution to the mixing mechanism 104. The silicon solution supply unit 102 includes a silicon solution supply source 102a, a silicon solution supply path 102b, and a flow rate regulator 102c.

The silicon solution supply source 102a is, for example, a tank for storing the silicon solution. The silicon solution supply path 102b connects the silicon solution supply source 102a and the mixing mechanism 104, and supplies the silicon solution from the silicon solution supply source 102a to the mixing mechanism 104.

The flow rate regulator 102c is arranged in the silicon solution supply path 102b and adjusts the flow rate of the silicon solution supplied to the mixing mechanism 104. The flow rate regulator 102c includes an on-off valve, a flow rate control valve, a flow meter, and the like. The silicon solution according to the embodiment is, for example, a solution in which colloidal silicon is dispersed.

The precipitation inhibitor supply unit 103 supplies the precipitation inhibitor to the mixing mechanism 104. The precipitation inhibitor supply unit 103 includes a precipitation inhibitor supply source 103a, a precipitation inhibitor supply path 103b, and a flow rate regulator 103c.

The precipitation inhibitor supply source 103a is, for example, a tank for storing the precipitation inhibitor. The precipitation inhibitor supply path 103b connects the precipitation inhibitor supply source 103a and the mixing mechanism 104, and supplies the precipitation inhibitor to the mixing mechanism 104 from the precipitation inhibitor supply source 103a.

The flow rate adjuster 103c is arranged in the precipitation inhibitor supply path 103b and adjusts the flow rate of the precipitation inhibitor supplied to the mixing mechanism 104. The flow rate regulator 103c includes an on-off valve, a flow rate control valve, a flow meter, and the like.

The precipitation inhibitor according to the embodiment may be any as long as it contains a component that suppresses the precipitation of silicon oxide. The precipitation inhibitor may contain, for example, a component that stabilizes the silicon ions dissolved in the aqueous phosphoric acid solution in a dissolved state to suppress the precipitation of the silicon oxide. Further, the precipitation inhibitor may contain a component that suppresses the precipitation of silicon oxide by other known methods.

As the precipitation inhibitor according to the embodiment, for example, an aqueous solution of hexafluorosilicic acid (H ₂ SiF ₆ ) containing a fluorine component can be used. Further, the precipitation inhibitor may contain an additive such as ammonia in order to stabilize hexafluorosilicic acid in the aqueous solution.

As the precipitation inhibitor according to the embodiment, for example, ammonium hexafluorosilicate (NH ₄ ) ₂ SiF ₆ or sodium hexafluorosilicate (Na ₂ SiF ₆ ) can be used.

Further, the precipitation inhibitor according to the embodiment may be a compound containing an element having a cation having an ionic radius of 0.2 Å to 0.9 Å. Here, the "ionic radius" is the radius of an ion obtained empirically from the sum of the radii of anions and cations obtained from the lattice constants of the crystal lattice.

The precipitation inhibitor according to the embodiment may contain, for example, an oxide of any element of aluminum, potassium, lithium, sodium, magnesium, calcium, zirconium, tungsten, titanium, molybdenum, hafnium, nickel and chromium.

Further, the precipitation inhibitor according to the embodiment is used in place of or in addition to the oxide of any of the above-mentioned elements, at least among the nitrides, chlorides, bromides, hydroxides and nitrates of any of the above-mentioned elements. One may be included.

The precipitation inhibitor according to the embodiment is, for example, at least one of Al (OH) ₃ , AlCl ₃ , AlBr ₃ , Al (NO ₃ ) ₃ , Al ₂ (SO ₄ ) ₃ , AlPO ₄ and Al ₂ O ₃ . May include.

Further, the precipitation inhibitor according to the embodiment may contain at least one of KCl, KBr, KOH and KNO ₃ . Further, the precipitation inhibitor according to the embodiment may contain at least one of LiCl, NaCl, MgCl ₂ , CaCl ₂ and ZrCl ₄ .

The mixing mechanism 104 mixes the phosphoric acid aqueous solution, the silicon solution, and the precipitation inhibitor to generate the etching solution L. That is, the etching solution L according to the embodiment contains an aqueous phosphoric acid solution, a precipitation inhibitor, and a silicon solution.

Further, at least one of the silicon solution and the precipitation inhibitor according to the embodiment contains alcohol as a solvent. The alcohol contained as such a solvent is, for example, either methanol, ethanol, propyl alcohol and isopropyl alcohol. As described above, the etching solution L according to the embodiment contains the phosphoric acid aqueous solution and the above-mentioned alcohol.

The etching solution supply path 105 connects the mixing mechanism 104 and the outer tank 112 of the processing tank 61, and supplies the etching solution L from the mixing mechanism 104 to the outer tank 112.

The flow rate adjuster 106 is arranged in the etching liquid supply path 105 and adjusts the flow rate of the etching liquid L supplied to the outer tank 112. The flow rate regulator 106 includes an on-off valve, a flow rate control valve, a flow meter, and the like.

The substrate processing unit 110 immerses the wafer W in the etching liquid L supplied from the etching liquid supply unit 100, and performs the etching process on the wafer W. The wafer W is an example of a substrate. In the embodiment, for example, the silicon nitride film can be selectively etched from the silicon nitride film and the silicon oxide film formed on the wafer W.

The substrate processing unit 110 includes a processing tank 61, a substrate elevating mechanism 63, a circulation path 120, a DIW supply unit 130, a bubbling gas supply unit 140, and a processing liquid discharge unit 150. The processing tank 61 has an inner tank 111, an outer tank 112, and a lid 113.

The inner tank 111 is a tank for immersing the wafer W in the etching solution L, and houses the etching solution L for immersing. The inner tank 111 has an opening 111a at the upper portion, and the etching solution E is stored up to the vicinity of the opening 111a.

In the inner tank 111, a plurality of wafers W are immersed in the etching solution L by using the substrate elevating mechanism 63, and the wafer W is subjected to an etching process. The substrate elevating mechanism 63 is configured to be able to elevate and elevate, and holds a plurality of wafers W side by side in a vertical posture.

The outer tank 112 is arranged outside the inner tank 111 so as to surround the inner tank 111, and receives the etching solution L flowing out from the opening 111a of the inner tank 111. As shown in FIG. 2, the liquid level of the outer tank 112 is maintained lower than the liquid level of the inner tank 111.

Further, the outer tank 112 has a temperature sensor and a phosphoric acid concentration sensor (not shown). Such a temperature sensor detects the temperature of the etching solution L, and the phosphoric acid concentration sensor detects the phosphoric acid concentration of the etching solution L. The signals generated by the temperature sensor and the phosphoric acid concentration sensor of the outer tank 112 are transmitted to the above-mentioned control unit 7.

The lid 113 opens and closes the opening 111a of the inner tank 111. That is, the lid 113 can move between the closed position that covers the opening 111a of the inner tank 111 and the open position that opens the opening 111a.

The control unit 7 (see FIG. 1) can suppress the volatilization of the etching solution L in the inner tank 111 by arranging the lid 113 in the closed position. Further, the control unit 7 can carry the wafer W into and out of the inner tank 111 by arranging the lid 113 in the open position.

In the example of FIG. 2, an example in which the opening 111a is configured to be opened and closed by two lids 113 is shown, but the configuration of the lid 113 is not limited to such an example, and for example, one. The lid 113 may be configured to open and close the opening 111a.

The inner tank 111, the outer tank 112, and the lid 113 are made of a material having high heat resistance and chemical resistance, such as quartz. As a result, the control unit 7 can etch the wafer W with the etching solution L held at a high temperature (for example, 150 ° C. or higher), so that the wafer W can be efficiently etched.

The outer tank 112 and the inner tank 111 are connected by a circulation path 120. One end of the circulation path 120 is connected to the bottom of the outer tank 112, and the other end of the circulation path 120 is connected to the processing liquid supply nozzle 125 located in the inner tank 111.

The pump 121, the heater 122, the filter 123, and the silicon concentration sensor 124 are located in the circulation path 120 in order from the outer tank 112 side.

The pump 121 forms a circulating flow of the etching solution L sent from the outer tank 112 to the inner tank 111 via the circulation path 120. Further, the etching solution L overflows from the opening 111a of the inner tank 111 and flows out to the outer tank 112 again. In this way, a circulating flow of the etching solution L is formed in the substrate processing unit 110. That is, such a circulating flow is formed in the outer tank 112, the circulation path 120, and the inner tank 111.

The heater 122 adjusts the temperature of the etching solution L circulating in the circulation path 120. The filter 123 filters the etching solution L circulating in the circulation path 120. The silicon concentration sensor 124 detects the silicon concentration of the etching solution L circulating in the circulation path 120. The signal generated by the silicon concentration sensor 124 is transmitted to the control unit 7.

The DIW supply unit 130 includes a DIW supply source 130a, a DIW supply path 130b, and a flow rate regulator 130c. The DIW supply unit 130 supplies DIW (DeIonized Water) to the outer tank 112 in order to adjust the concentration of the etching solution L stored in the treatment tank 61.

The DIW supply path 130b connects the DIW supply source 130a and the outer tank 112, and supplies DIW at a predetermined temperature from the DIW supply source 130a to the outer tank 112.

The flow rate regulator 130c is arranged in the DIW supply path 130b and adjusts the supply amount of DIW supplied to the outer tank 112. The flow rate regulator 130c includes an on-off valve, a flow rate control valve, a flow meter, and the like. By adjusting the supply amount of DIW by the flow rate regulator 130c, the temperature, phosphoric acid concentration, silicon concentration and precipitation inhibitor concentration of the etching solution L in the etching processing apparatus 60 are adjusted.

The bubbling gas supply unit 140 discharges bubbles of an inert gas (for example, nitrogen gas) into the etching solution L stored in the inner tank 111. The bubbling gas supply unit 140 includes an inert gas supply source 140a, an inert gas supply path 140b, a flow rate regulator 140c, and a gas nozzle 140d.

The inert gas supply path 140b connects the inert gas supply source 140a and the gas nozzle 140d, and supplies the inert gas (for example, nitrogen gas) from the inert gas supply source 140a to the gas nozzle 140d.

The flow rate regulator 140c is arranged in the inert gas supply path 140b and adjusts the supply amount of the inert gas supplied to the gas nozzle 140d. The flow rate regulator 140c includes an on-off valve, a flow rate control valve, a flow meter, and the like.

The gas nozzle 140d is located, for example, in the inner tank 111 below the wafer W and the processing liquid supply nozzle 125. The gas nozzle 140d discharges bubbles of the inert gas into the etching solution L stored in the inner tank 111.

The etching processing apparatus 60 according to the embodiment supplies the etching liquid L with a fast flow to the gap between the plurality of wafers W arranged side by side in the inner tank 111 by discharging the bubbles of the inert gas from the gas nozzle 140d. can do. Therefore, according to the embodiment, a plurality of wafers W can be efficiently and evenly etched.

The treatment liquid discharge unit 150 discharges the etching liquid L to the drain DR when replacing all or part of the etching liquid L used in the etching treatment. The treatment liquid discharge unit 150 includes a discharge path 150a, a flow rate regulator 150b, and a cooling tank 150c.

The discharge path 150a is connected to the circulation path 120. The flow rate regulator 150b is arranged in the discharge path 150a and adjusts the discharge amount of the etching liquid L to be discharged. The flow rate regulator 150b includes an on-off valve, a flow rate control valve, a flow meter, and the like.

The cooling tank 150c temporarily stores and cools the etching solution L flowing through the discharge path 150a. In the cooling tank 150c, the discharge amount of the etching solution L is adjusted by the flow rate regulator 150b.

In the etching processing apparatus 60 described so far, the alcohol used for at least one of the silicon solution and the precipitation inhibitor (hereinafter, also collectively referred to as “additive”) is boiled in the high temperature etching solution L, and the silicon solution is boiled. A large amount of bubbles B (see FIG. 4A) may be generated in the etching solution L.

Further, in the etching processing apparatus 60, a large amount of bubbles B may be generated in the etching solution L due to the bubbles of the inert gas discharged from the bubbling gas supply unit 140.

Further, since the etching solution L contains an alcohol that functions as a surfactant, the bubbles B once generated do not easily disappear, so that the etching solution L containing a large amount of bubbles B is external from the outer tank 112. There was a risk of overflowing.

Therefore, in the substrate processing system 1 according to the embodiment, by configuring the processing tank 61 as described below, the bubbles B generated in the etching solution L can be efficiently defoamed.

<Details of processing tank>
Subsequently, the detailed configuration of the processing tank 61 according to the embodiment will be described with reference to FIGS. 3 to 6. FIG. 3 is an enlarged cross-sectional view showing the configuration of the processing tank 61 according to the embodiment. Note that FIG. 3 shows a state in which the lid 113 is arranged in the closed position and the etching solution L flows out to the outer tank 112 from the gap between the edge 111b of the inner tank 111 and the lid 113. ..

The treatment tank 61 according to the embodiment includes a wetted member 114 in addition to the inner tank 111, the outer tank 112, and the lid 113 described above. The wetted member 114 is arranged at a position where the etching solution L containing the bubble B (see FIG. 4A) comes into contact with the etching solution L when the etching solution L flows out from the inner tank 111 to the outer tank 112.

For example, as shown in FIG. 3, the wetted member 114 is arranged on the inner wall surface 112a of the outer tank 112. The wetted member 114 is arranged, for example, on the inner wall surface 112a of the outer tank 112 from a position below the preset liquid level of the outer tank 112 to the edge 112b of the outer tank 112. ..

Further, the wetted member 114 according to the embodiment is made of a hydrophobic material. Then, the treatment tank 61 according to the embodiment can efficiently defoam the bubbles B generated in the etching liquid L by bringing the etching liquid L containing the bubbles B into contact with the hydrophobic liquid contact member 114. .. The mechanism will be described below.

4A to 4D are views for explaining the defoaming mechanism of the foam B by the hydrophobic wetted member 114. FIG. 4A shows a state immediately after the bubble B adheres to the surface 114a of the wetted member 114.

As shown in FIG. 4A, the additive alcohol covers the surface of the foam B as the surfactant S, so that the foam B is maintained without foaming even after adhering to the surface 114a of the wetted member 114. On the other hand, since the surface 114a of the wetted member 114 is a hydrophobic surface and no liquid film is formed on the surface 114a of the wetted member 114, the surfactant S is almost absent.

As a result, a concentration gradient of the surfactant S is generated at the contact portion between the bubble B and the surface 114a of the wetted member 114, so that the surfactant S in the vicinity of the contact portion moves to the surface 114a of the wetted member 114. Therefore, as shown in FIG. 4B, in the bubble B, the concentration gradient of the surfactant S (that is, the local gradient of the surface tension) between the contact portion with the surface 114a of the wetted member 114 and the other portion. ) Occurs.

Then, in the foam B, an effect of trying to eliminate the local gradient of the surface tension (so-called Marangoni effect) occurs. Therefore, as shown in FIG. 4C, the distribution of the surfactant S is substantially evenly distributed throughout the foam B. Become.

However, in the foam B, the concentration gradient of the surfactant S reoccurs at the contact portion between the foam B and the surface 114a of the wetted member 114, so that the surfactant S in the vicinity of the contact portion is present on the surface 114a of the wetted member 114. Move to.

In this way, in the bubble B adsorbed on the surface 114a of the wetted member 114, the phenomenon that the surfactant S in the vicinity of the contact portion moves to the surface 114a of the wetted member 114 and the phenomenon caused by the Marangoni effect alternate. It occurs repeatedly.

As a result, the amount of the surfactant S covering the surface of the foam B gradually decreases, so that the surface tension of the foam B gradually increases, and finally, as shown in FIG. 4D, the surface of the wetted member 114 The bubble B attached to 114a foams.

As described above, the treatment tank 61 according to the embodiment efficiently extinguishes the bubbles B generated in the etching solution L by bringing the etching solution L containing the bubbles B into contact with the hydrophobic liquid contact member 114. Can be done. Therefore, according to the embodiment, the treatment with the etching solution L to which the additive is added can be stably carried out.

Since the surface of quartz used as the base material of the inner tank 111, the outer tank 112 and the lid 113 has hydrophilicity, the defoaming phenomenon of foam B described in FIGS. 4A to 4D occurs by itself. hard.

The material of the wetted member 114 may be, for example, one of PTFE (polytetrafluoroethylene), PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer) and PCTFE (polychlorotrifluoroethylene).

In the embodiment, since the wetted member 114 has hydrophobicity and high chemical resistance like the above-mentioned material, the treatment with the etching solution L containing the phosphoric acid aqueous solution can be stably carried out.

FIG. 5 is a plan view showing an example of the arrangement of the wetted member 114 in the treatment tank 61 according to the embodiment. As shown in FIG. 5, in the processing tank 61, the outer tank 112 is arranged so as to surround the four sides of the inner tank 111 in a plan view.

Further, in the example of FIG. 5, of the four edge portions 111b of the inner tank 111, the etching solution L is discharged from the two edge portions 111b (left and right edge portions 111b in the figure) of the inner tank 111 from which the etching solution L flows out. It flows out to the outer tank 112.

The wetted member 114 according to the embodiment may be arranged on the inner wall surface 112a on two sides of the inner wall surface 112a on the four sides of the outer tank 112. Further, the wetted member 114 may be arranged so as to face the two edge portions 111b of the inner tank 111 from which the etching liquid L flows out.

In this way, by arranging the wetted member 114 in the vicinity of the edge portion 111b of the inner tank 111 from which the etching solution L containing the bubbles B (see FIG. 4A) flows out, the bubbles B generated in the etching solution L can be further generated. It can be efficiently defoamed.

The arrangement of the wetted member 114 according to the embodiment is not limited to the example of FIG. FIG. 6 is a plan view showing another example of the arrangement of the wetted member 114 in the treatment tank 61 according to the embodiment. In the example of FIG. 6, the etching solution L flows out to the outer tank 112 from all of the four edge portions 111b in the inner tank 111.

The wetted member 114 according to the embodiment may be arranged on all of the four inner wall surfaces 112a of the outer tank 112. That is, the wetted member 114 may be arranged so as to face all of the four edge portions 111b of the inner tank 111 from which the etching liquid L flows out.

In this way, by arranging the wetted member 114 in the vicinity of the edge portion 111b of the inner tank 111 from which the etching solution L containing the bubbles B (see FIG. 4A) flows out, the bubbles B generated in the etching solution L can be further generated. It can be efficiently defoamed.

As described above, the wetted member 114 according to the embodiment may be arranged on at least two inner wall surfaces 112a of the four inner wall surfaces 112a of the outer tank 112. As a result, the bubbles B generated in the etching solution L can be defoamed more efficiently.

Although not shown in FIGS. 5 and 6, the wetted member 114 may be arranged on the inner wall surface 112a on three sides of the inner wall surface 112a on the four sides of the outer tank 112.

Further, the treatment tank 61 according to the embodiment is not limited to the case where the hydrophobic wetted member 114 is arranged on the inner wall surface 112a of the outer tank 112, and the inner wall surface 112a of the outer tank 112 itself is a hydrophobic surface. May be good.

That is, in the processing tank 61 according to the embodiment, at least a part of the contact surface (here, the outer tank 112) in contact with the etching liquid L when the etching liquid L containing the bubbles B flows out from the inner tank 111 to the outer tank 112. The inner wall surface 112a) of the above may be a hydrophobic surface.

As described above, since the bubbles B can be defoamed on the inner wall surface 112a of the outer tank 112 which is a hydrophobic surface, the bubbles B generated in the etching solution L can be efficiently defoamed. .. Therefore, according to the embodiment, the treatment with the etching solution L to which the additive is added can be stably carried out.

As a method for making the surface of the hydrophilic base material (quartz) a hydrophobic surface, an existing method such as a coating treatment or a lining treatment for the hydrophobic material can be used.

<Modification 1>
Subsequently, various modifications of the substrate processing system 1 according to the embodiment will be described with reference to FIGS. 7 to 22. FIG. 7 is an enlarged cross-sectional view showing the configuration of the processing tank 61 according to the first modification of the embodiment. In the following various modifications, the same parts as those in the embodiment are designated by the same reference numerals, and duplicate description will be omitted.

In the first modification, the treatment tank 61 is different from the above-described embodiment in the arrangement of the wetted member 114. Specifically, in the first modification, the wetted member 114 has a plate shape and is erected inside the outer tank 112. The wetted member 114 has, for example, a flat plate shape, and is arranged between the bottom surface of the outer tank 112 and a position above the preset liquid level of the outer tank 112.

In the first modification, by arranging the wetted member 114 at the position shown in FIG. 7, the etching solution L containing the bubbles B (see FIG. 4A) flows out from the inner tank 111 to the outer tank 112. Can be brought into contact with the hydrophobic wetted member 114.

As a result, in the first modification, the bubbles B generated in the etching solution L can be efficiently defoamed, so that the treatment with the etching solution L to which the additive is added can be stably performed.

FIG. 8 is a plan view showing an example of the arrangement of the wetted member 114 in the treatment tank 61 according to the first modification of the embodiment. In the example of FIG. 8, of the four edge portions 111b of the inner tank 111, the etching solution L is discharged from the two edge portions 111b (left and right edge portions 111b in the figure) of the inner tank 111 from which the etching solution L flows out. It flows out to the outer tank 112.

Then, the wetted member 114 according to the first modification may be arranged in the outer tank 112 on two sides of the outer tank 112 located on the four sides of the inner tank 111. Further, the wetted member 114 may be arranged so as to face the two edge portions 111b of the inner tank 111 from which the etching liquid L flows out.

In this way, by arranging the wetted member 114 in the vicinity of the edge portion 111b of the inner tank 111 from which the etching solution L containing the bubbles B (see FIG. 4A) flows out, the bubbles B generated in the etching solution L can be further generated. It can be efficiently defoamed.

The arrangement of the wetted member 114 according to the modified example 1 is not limited to the example of FIG. FIG. 9 is a plan view showing another example of the arrangement of the wetted member 114 in the treatment tank 61 according to the first modification of the embodiment. In the example of FIG. 9, the etching solution L flows out to the outer tank 112 from all of the four edge portions 111b in the inner tank 111.

Then, the wetted member 114 according to the first modification may be arranged in all of the four outer tanks 112 located on the four sides of the inner tank 111. That is, the wetted member 114 may be arranged so as to face all of the four edge portions 111b of the inner tank 111 from which the etching liquid L flows out.

In this way, by arranging the wetted member 114 in the vicinity of the edge portion 111b of the inner tank 111 from which the etching solution L containing the bubbles B (see FIG. 4A) flows out, the bubbles B generated in the etching solution L can be further generated. It can be efficiently defoamed.

As described above, the wetted member 114 according to the first modification may be arranged in at least two outer tanks 112 among the four outer tanks 112 located on the four sides of the inner tank 111. As a result, the bubbles B generated in the etching solution L can be defoamed more efficiently.

Although not shown in FIGS. 8 and 9, the wetted member 114 may be arranged in the outer tank 112 on three sides of the outer tank 112 located on the four sides of the inner tank 111.

Further, in the above example, the case where the wetted member 114 has a flat plate shape is shown, but the shape of the wetted member 114 is not limited to the flat plate shape. 10 and 11 are perspective views showing another example of the shape of the wetted member 114 according to the first modification of the embodiment.

As shown in FIG. 10, the wetted contact member 114 according to the first modification may be configured by combining columnar members. As a result, the surface area of the wetted member 114 can be increased, so that the bubbles B generated in the etching solution L (see FIG. 4A) can be extinguished more efficiently.

Further, as shown in FIG. 11, the wetted contact member 114 according to the modified example 1 may be configured in a zigzag shape. Since the surface area of the wetted member 114 can be increased by this as well, the bubbles B (see FIG. 4A) generated in the etching solution L can be extinguished more efficiently.

The method of increasing the surface area of the wetted member 114 in the modified example 1 is not limited to the examples of FIGS. 10 and 11. For example, the plate-shaped member may have a hollowed-out shape, or the surface of the plate-shaped member may have a rough surface. Since the surface area of the wetted member 114 can be increased by this as well, the bubbles B generated in the etching solution L can be extinguished more efficiently.

<Modification 2>
FIG. 12 is an enlarged cross-sectional view showing the configuration of the processing tank 61 according to the modified example 2 of the embodiment, and FIG. 13 is an example of the arrangement of the wetted member 114 in the processing tank 61 according to the modified example 2 of the embodiment. It is a plan view which shows. In addition, in FIG. 13, the illustration of the lid 113 is omitted.

As shown in FIG. 12, the wetted member 114 according to the second modification is arranged on the bottom surface 113a of the lid 113. Further, as shown in FIG. 13, the wetted member 114 according to the modified example 2 is, for example, the two edge portions 111b of the inner tank 111 from which the etching liquid L flows out of the four edge portions 111b of the inner tank 111. It is arranged along (the left and right edge portions 111b in the figure).

In the second modification, by arranging the wetted member 114 at the above-mentioned position, when the etching solution L containing the bubble B (see FIG. 4A) flows out from the inner tank 111 to the outer tank 112, the etching solution L is hydrophobic. It can be brought into contact with the sex contact member 114.

As a result, in the second modification, the bubbles B generated in the etching solution L can be efficiently defoamed, so that the treatment with the etching solution L to which the additive is added can be stably performed.

Further, the wetted member 114 according to the second modification may be arranged along the two edge portions 111b of the inner tank 111 from which the etching liquid L flows out. That is, the wetted member 114 according to the second modification may not be arranged on the bottom surface 113b at a portion other than the portion adjacent to the gap between the edge portion 111b and the lid 113 from which the etching solution L flows out.

As a result, the inside of the inner tank 111 can be visually recognized from the outside through the central portion of the lid 113 made of quartz (the portion where the wetted member 114 is not arranged). Therefore, according to the second modification, since the state of the wafer W during the etching process can be visually recognized, the process with the etching solution L to which the additive is added can be performed more stably.

In the second modification, when the etching solution L flows out from the three-sided or four-sided edge portion 111b of the inner tank 111, the wetted contact member 114 is arranged along the three-sided or four-sided edge portion 111b of the inner tank 111. It is good.

Further, the treatment tank 61 according to the second modification is not limited to the case where the hydrophobic wetted member 114 is arranged on the bottom surface 113b of the lid 113, and even if the bottom surface 113b of the lid 113 itself is a hydrophobic surface. good.

Also with this, since the bubbles B can be defoamed on the bottom surface 113b of the lid 113 which is the hydrophobic surface, the bubbles B generated in the etching solution L can be efficiently defoamed. Therefore, according to the second modification, the treatment with the etching solution L to which the additive is added can be stably carried out.

<Modification 3>
FIG. 14 is an enlarged cross-sectional view showing the configuration of the processing tank 61 according to the modified example 3 of the embodiment, and FIG. 15 is an example of the arrangement of the wetted member 114 in the processing tank 61 according to the modified example 3 of the embodiment. It is a plan view which shows.

As shown in FIG. 14, the wetted member 114 according to the modified example 3 is arranged at the edge portion 111b of the inner tank 111. Further, as shown in FIG. 15, the wetted member 114 according to the modified example 3 is, for example, the two edge portions 111b of the inner tank 111 from which the etching liquid L flows out of the four edge portions 111b of the inner tank 111. (In the figure, the left and right edges 111b) are arranged.

As a result, in the modified example 3, when the etching solution L containing the bubble B (see FIG. 4A) flows out from the inner tank 111 to the outer tank 112, the etching solution L can be brought into contact with the hydrophobic wetted member 114. can.

Therefore, according to the modification 3, since the bubbles B generated in the etching solution L can be efficiently defoamed, the treatment with the etching solution L to which the additive is added can be stably performed.

Further, as shown in FIG. 14, the wetted member 114 according to the modified example 3 is formed on the inner wall surface 111c of the inner tank 111 adjacent to the edge portion 111b and the outer wall surface 111d of the inner tank 111 adjacent to the edge portion 111b. It may be arranged.

That is, the wetted member 114 according to the modified example 3 may be arranged in the vicinity of the edge portion 111b of the inner tank 111. As a result, in the modified example 3, the bubbles B generated in the etching solution L can be extinguished more efficiently.

In the third modification, when the etching solution L flows out from the three-sided or four-sided edge portion 111b of the inner tank 111, the wetted member 114 may be arranged on the three-sided or four-sided edge portion 111b of the inner tank 111. ..

Further, the treatment tank 61 according to the third modification is not limited to the case where the hydrophobic wetted member 114 is arranged on the edge portion 111b of the inner tank 111, and the edge portion 111b of the inner tank 111 itself is a hydrophobic surface. You may.

Also with this, since the bubbles B can be defoamed at the edge portion 111b of the inner tank 111 which is a hydrophobic surface, the bubbles B generated in the etching solution L can be efficiently defoamed. Therefore, according to the modified example 3, the treatment with the etching solution L to which the additive is added can be stably carried out.

<Modification example 4>
FIG. 16 is an enlarged cross-sectional view showing the configuration of the processing tank 61 according to the modified example 4 of the embodiment, and FIG. 17 is an example of the arrangement of the wetted member 114 in the processing tank 61 according to the modified example 4 of the embodiment. It is a plan view which shows. Further, FIG. 18 is a perspective view showing an example of the shape of the wetted member 114 according to the modified example 4 of the embodiment.

As shown in FIG. 16, the wetted contact member 114 according to the modified example 4 is arranged so as to block the etching liquid L flowing out from the inner tank 111 to the outer tank 112. For example, as shown in FIG. 16, the wetted member 114 according to the modified example 4 is located above the preset liquid level of the outer tank 112, and the etching liquid L flows out from the inner tank 111. It is arranged at a position below the edge portion 111b.

Further, as shown in FIG. 17, the wetted member 114 according to the modified example 4 has, for example, the two edge portions 111b of the inner tank 111 from which the etching liquid L flows out of the four edge portions 111b of the inner tank 111. It is arranged along (the left and right edge portions 111b in the figure). Further, as shown in FIG. 18 and the like, the wetted member 114 according to the modified example 4 has a ladder-like shape.

In the modified example 4, by arranging the ladder-shaped wetted member 114 at the above-mentioned position, the etching solution L containing the bubbles B (see FIG. 4A) flows out from the inner tank 111 to the outer tank 112. L can be brought into contact with the hydrophobic wetted member 114.

As a result, in the modified example 4, the bubbles B generated in the etching solution L can be efficiently defoamed, so that the treatment with the etching solution L to which the additive is added can be stably performed.

Further, in the modified example 4, it is preferable that the wetted member 114 has a ladder shape. As a result, the surface area of the wetted member 114 can be increased, so that the bubbles B generated in the etching solution L can be extinguished more efficiently.

The shape of the wetted member 114 according to the modified example 4 is not limited to the ladder shape. 19 and 20 are perspective views showing another example of the shape of the wetted member 114 according to the modified example 4 of the embodiment.

As shown in FIG. 19, the wetted contact member 114 according to the modified example 4 may have a structure having an inclined surface. Since the surface area of the wetted member 114 can be increased by this as well, the bubbles B (see FIG. 4A) generated in the etching solution L can be extinguished more efficiently.

Further, as shown in FIG. 20, the wetted member 114 according to the modified example 4 may have a grid-like shape. Since the surface area of the wetted member 114 can be increased by this as well, the bubbles B (see FIG. 4A) generated in the etching solution L can be extinguished more efficiently.

In the fourth modification, when the etching solution L flows out from the three-sided or four-sided edge portion 111b of the inner tank 111, the wetted contact member 114 is arranged along the three-sided or four-sided edge portion 111b of the inner tank 111. It is good.

<Modification 5>
FIG. 21 is a perspective view showing the configuration of the substrate elevating mechanism 63 according to the modified example 5 of the embodiment. As shown in FIG. 21, the substrate elevating mechanism 63 has a back plate portion 63a and a support portion 63b. The back plate portion 63a has a substantially flat plate shape and extends in the vertical direction. The support portion 63b extends horizontally from the back plate portion 63a and supports the wafer W in an upright posture.

FIG. 22 is an enlarged cross-sectional view showing the configuration of the substrate processing unit 110 according to the modified example 5 of the embodiment. Note that FIG. 22 shows a state in which the substrate elevating mechanism 63 is arranged at the descending position and the wafer W (see FIG. 21) is immersed in the etching solution L.

As shown in FIG. 22, the wetted contact member 114 according to the modified example 5 is arranged on a part of the surface of the substrate elevating mechanism 63. The wetted member 114 according to the modified example 5 is, for example, from a position below the preset liquid level of the inner tank 111 in the back plate portion 63a of the substrate elevating mechanism 63 to the upper end portion of the back plate portion 63a. Placed between.

In the modified example 5, by arranging the wetted member 114 at the above-mentioned position, when the etching solution L containing the bubble B (see FIG. 4A) flows out from the inner tank 111 to the outer tank 112, the etching solution L is hydrophobic. It can be brought into contact with the sex contact member 114.

As a result, in the modified example 5, the bubbles B generated in the etching solution L can be efficiently defoamed, so that the treatment with the etching solution L to which the additive is added can be stably performed.

The substrate processing unit 110 according to the modified example 5 is not limited to the case where the hydrophobic wetted member 114 is arranged on a part of the surface of the substrate elevating mechanism 63, and the part of the surface of the substrate elevating mechanism 63 itself. May be a hydrophobic surface.

Also with this, since the bubbles B can be defoamed on a part of the surface of the substrate elevating mechanism 63 which is a hydrophobic surface, the bubbles B generated in the etching solution L can be efficiently defoamed. Therefore, according to the modified example 5, the treatment with the etching solution L to which the additive is added can be stably carried out.

The substrate processing apparatus (board processing system 1) according to the embodiment includes an inner tank 111, an outer tank 112, a lid 113, and a wetted member 114. The inner tank 111 has an opening 111a at the upper portion, and the substrate (wafer W) is immersed in the treatment liquid (etching liquid L). The outer tank 112 is arranged outside the inner tank 111 and receives the treatment liquid (etching liquid L) flowing out from the opening 111a. The lid 113 opens and closes the opening 111a. The wetted member 114 has hydrophobicity and is arranged at a position where the treatment liquid (etching liquid L) containing bubbles B comes into contact with the treatment liquid (etching liquid L) when it flows out from the inner tank 111 to the outer tank 112. To. This makes it possible to stably carry out the treatment with the etching solution L to which the additive is added.

Further, in the substrate processing apparatus (board processing system 1) according to the embodiment, the wetted member 114 is arranged on the inner wall surface 112a of the outer tank 112. As a result, the bubbles B generated in the etching solution L can be efficiently defoamed.

Further, in the substrate processing apparatus (board processing system 1) according to the embodiment, the outer tank 112 is arranged so as to surround the four sides of the inner tank 111. Further, the wetted member 114 is arranged on at least two inner wall surfaces 112a of the four inner wall surfaces 112a of the outer tank 112. As a result, the bubbles B generated in the etching solution L can be defoamed more efficiently.

Further, in the substrate processing apparatus (board processing system 1) according to the embodiment, the wetted member 114 has a plate shape and is erected inside the outer tank 112. As a result, the bubbles B generated in the etching solution L can be efficiently defoamed.

Further, in the substrate processing apparatus (board processing system 1) according to the embodiment, the outer tank 112 is arranged so as to surround the four sides of the inner tank 111. Further, the wetted member 114 is arranged so as to surround at least two sides of the inner tank 111. As a result, the bubbles B generated in the etching solution L can be defoamed more efficiently.

Further, in the substrate processing apparatus (board processing system 1) according to the embodiment, the wetted member 114 is arranged on the bottom surface 113a of the lid 113. As a result, the bubbles B generated in the etching solution L can be efficiently defoamed.

Further, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the wetted member 114 is arranged along the edge portion 111b of the inner tank 111 from which the processing liquid (etching liquid L) flows out in a plan view. Thereby, the treatment with the etching solution L to which the additive is added can be carried out more stably.

Further, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the wetted member 114 is arranged at the edge portion 111b of the inner tank 111 from which the processing liquid (etching liquid L) flows out. As a result, the bubbles B generated in the etching solution L can be efficiently defoamed.

Further, in the substrate processing apparatus (board processing system 1) according to the embodiment, the wetted member 114 is arranged so as to block the processing liquid (etching liquid L) flowing out from the inner tank 111 to the outer tank 112. As a result, the bubbles B generated in the etching solution L can be efficiently defoamed.

Further, the substrate processing apparatus (board processing system 1) according to the embodiment further includes a substrate elevating mechanism 63 that holds the substrate (wafer W) and carries it in and out of the inner tank 111. Further, the wetted member 114 is arranged on a part of the surface of the substrate elevating mechanism 63. As a result, the bubbles B generated in the etching solution L can be efficiently defoamed.

Further, in the substrate processing apparatus (board processing system 1) according to the embodiment, the material of the wetted member 114 is any one of PTFE, PFA and PCTFE. This makes it possible to stably carry out the treatment with the etching solution L containing the phosphoric acid aqueous solution.

The substrate processing apparatus (board processing system 1) according to the embodiment includes an inner tank 111, an outer tank 112, and a lid 113. The inner tank 111 has an opening 111a at the upper portion, and the substrate (wafer W) is immersed in the treatment liquid (etching liquid L). The outer tank 112 is arranged outside the inner tank 111 and receives the treatment liquid (etching liquid L) flowing out from the opening 111a. The lid 113 opens and closes the opening 111a. Further, the substrate processing apparatus (substrate processing system 1) according to the embodiment comes into contact with the treatment liquid (etching liquid L) when the treatment liquid (etching liquid L) containing bubbles B flows out from the inner tank 111 to the outer tank 112. At least a part of the contact surface is a hydrophobic surface. This makes it possible to stably carry out the treatment with the etching solution L to which the additive is added.

Further, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the treatment liquid (etching liquid L) is phosphoric acid to which an additive containing alcohol is added. Thereby, among the silicon nitride film and the silicon oxide film laminated on the wafer W, the silicon nitride film can be etched with a high selectivity.

Further, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the alcohol is any one of methanol, ethanol, propyl alcohol, and isopropyl alcohol. Thereby, the additive can be satisfactorily added to the phosphoric acid aqueous solution.

Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various changes can be made without departing from the spirit of the present disclosure. For example, in the above embodiment, an example in which the etching solution L containing the aqueous phosphoric acid solution, the silicon solution and the precipitation inhibitor is used as the treatment solution is shown, but the composition of the treatment solution is not limited to such an example.

For example, in the present disclosure, the wafer W may be treated by using an organic acid as a treatment liquid. Specifically, for example, the wafer W may be treated by using at least one of acetic acid, formic acid, oxalic acid and maleic acid as a treatment liquid.

As described above, when the organic acid is used as the treatment liquid, a large amount of bubbles may be generated in the treatment liquid because the organic acid functions as a surfactant. Therefore, by applying the technique of the present disclosure described so far, it is possible to efficiently defoam the bubbles generated in the treatment liquid of the organic acid.

It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. Moreover, the above-mentioned embodiment may be omitted, replaced or changed in various forms without departing from the scope of the attached claims and the purpose thereof.

1 Board processing system (an example of board processing equipment)
61 Processing tank 63 Substrate elevating mechanism 110 Substrate processing unit 111 Inner tank 111a Opening 111b Edge 112 Outer tank 112a Inner wall surface 113 Lid 113a Bottom surface 114 Wetting member B Foam W wafer (example of substrate)
L Etching liquid (example of treatment liquid)

Claims (14)

An inner tank that has an opening at the top and allows the substrate to be immersed in the treatment liquid.
An outer tank arranged outside the inner tank and receiving the treatment liquid flowing out from the opening, and an outer tank.
A lid that opens and closes the opening, and
A wetted member which is hydrophobic and is arranged at a position where the treatment liquid containing bubbles comes into contact with the treatment liquid when it flows out from the inner tank to the outer tank.
Substrate processing equipment. The substrate processing apparatus according to claim 1, wherein the wetted member is arranged on the inner wall surface of the outer tank. The outer tank is arranged so as to surround all four sides of the inner tank.
The substrate processing apparatus according to claim 2, wherein the wetted member is arranged on at least two inner wall surfaces of the four inner wall surfaces of the outer tank. The substrate processing apparatus according to any one of claims 1 to 3, wherein the wetted member has a plate shape and is erected inside the outer tank. The outer tank is arranged so as to surround all four sides of the inner tank.
The substrate processing apparatus according to claim 4, wherein the wetted member is arranged so as to surround at least two sides of the inner tank. The substrate processing apparatus according to any one of claims 1 to 5, wherein the wetted member is arranged on the bottom surface of the lid. The substrate processing apparatus according to claim 6, wherein the wetted member is arranged along the edge of the inner tank from which the processing liquid flows out in a plan view. The substrate processing apparatus according to any one of claims 1 to 7, wherein the wetted member is arranged at an edge of the inner tank from which the treated liquid flows out. The substrate processing apparatus according to any one of claims 1 to 8, wherein the wetted member is arranged so as to block the processing liquid flowing out from the inner tank to the outer tank. Further provided with a board elevating mechanism that holds the board and carries it in and out of the inner tank.
The substrate processing apparatus according to any one of claims 1 to 9, wherein the wetted member is arranged on a part of the surface of the substrate elevating mechanism. The material of the wetted member is any one of PTFE (polytetrafluoroethylene), PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer) and PCTFE (polychlorotrifluoroethylene). The substrate processing apparatus according to any one. An inner tank that has an opening at the top and allows the substrate to be immersed in the treatment liquid.
An outer tank arranged outside the inner tank and receiving the treatment liquid flowing out from the opening, and an outer tank.
A lid that opens and closes the opening, and
Equipped with
A substrate processing apparatus in which at least a part of a contact surface that comes into contact with the treatment liquid when the treatment liquid containing bubbles flows out from the inner tank to the outer tank is a hydrophobic surface. The substrate processing apparatus according to any one of claims 1 to 12, wherein the treatment liquid is phosphoric acid to which an additive containing alcohol is added. The substrate processing apparatus according to claim 13, wherein the alcohol is any one of methanol, ethanol, propyl alcohol, and isopropyl alcohol.

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