JP2022027189A - Substrate processing method, storage medium, and substrate processing device - Google Patents

Abstract

To make it possible to locally adjust the film thickness of a film formed on the surface of a substrate.SOLUTION: A substrate processing method according to an embodiment of the present disclosure includes supplying a treatment liquid to the surface of the substrate while rotating the substrate as if the treatment liquid is applied on the surface of the substrate, and sucking gas from an opening having a width smaller than half the diameter of the substrate in the vicinity of the surface of the substrate with a nozzle including the opening arranged such that the opening faces the surface of the substrate after the treatment liquid is supplied.SELECTED DRAWING: Figure 8

Description

The present disclosure relates to a substrate processing method, a storage medium, and a substrate processing apparatus.

Patent Document 1 describes a step of applying a chemical solution on the main surface of the substrate to be treated while rotating the substrate to be treated to form a coating film, a step of drying the coating film while rotating the object to be treated, and a drying step. Discloses a coating film forming method comprising a step of blowing a gas composed of air or nitrogen toward a predetermined region of a coating film.

Japanese Patent Application Laid-Open No. 2003-37053

The present disclosure provides a substrate processing method, a storage medium, and a substrate processing apparatus capable of locally adjusting the film thickness of a coating film formed on a substrate surface.

The substrate processing method according to one aspect of the present disclosure is to supply the treatment liquid to the surface of the substrate while rotating the substrate so as to apply the treatment liquid on the surface of the substrate, and after the supply of the treatment liquid, It includes sucking gas from the opening in the vicinity of the surface of the substrate in a state where a nozzle including an opening having a width smaller than half the diameter of the substrate is arranged so that the opening faces the surface of the substrate.

According to the present disclosure, there is provided a substrate processing method, a storage medium, and a substrate processing apparatus capable of locally adjusting the film thickness of a coating film formed on a substrate surface.

FIG. 1 is a schematic perspective view showing an example of a substrate processing system. FIG. 2 is a side view schematically showing an example of a coating and developing apparatus. FIG. 3 is a schematic diagram showing an example of a liquid treatment unit. FIG. 4A is a schematic view showing an example of the opening portion of the suction nozzle. FIG. 4B is a schematic diagram for explaining an example of the arrangement relationship between the suction nozzle and the work. FIG. 5 is a block diagram showing an example of the hardware configuration of the control device. FIG. 6 is a flowchart showing an example of the liquid treatment method. FIG. 7 is a flowchart showing an example of the coating process of the processing liquid. FIG. 8 is a flowchart showing an example of the film forming process. FIG. 9 is a graph showing an example of the time change of the rotation speed of the work during the execution of the liquid treatment. FIG. 10 is a graph showing an example of the measurement result of the film thickness. FIG. 11 is a schematic diagram for explaining a phenomenon caused by gas suction from a suction nozzle. FIG. 12A is a graph showing an example of the measurement result of the film thickness according to the comparative example. FIG. 12B is a graph showing an example of the measurement result of the film thickness according to the embodiment. FIG. 13A is a diagram showing a film thickness distribution according to a comparative example. FIG. 13B is a diagram showing an example of a film thickness measuring portion according to the embodiment. FIG. 14 is a graph showing an example of time-dependent changes in the rotation speed of the work during execution of the liquid treatment according to the first modification. FIG. 15A is a graph showing an example of the measurement result of the film thickness when the rotation speed is constant. FIG. 15B is a graph showing an example of the measurement result of the film thickness when the rotation speed is reduced. FIG. 16 is a schematic diagram for explaining an example of the liquid treatment method according to the modified example 2 and the modified example 3. FIG. 17A is a graph showing an example of the measurement result of the film thickness when the opening of the suction nozzle is fixed at a fixed position. FIG. 17B is a graph showing an example of the measurement result of the film thickness when the opening of the suction nozzle is reciprocated. FIG. 18A is a graph showing an example of the measurement result of the film thickness when two points are sucked in the order from the outer peripheral side to the central side. FIG. 18B is a graph showing an example of the measurement result of the film thickness when two points are sucked in the order from the center side to the outer peripheral side.

Hereinafter, various exemplary embodiments will be described.

The substrate processing method according to one exemplary embodiment is to supply the treatment liquid to the surface of the substrate while rotating the substrate so as to apply the treatment liquid on the surface of the substrate, and after the supply of the treatment liquid. It includes sucking gas in the vicinity of the surface of the substrate from the opening in a state where a nozzle including an opening having a width smaller than half the diameter of the substrate is arranged so that the opening faces the surface of the substrate.

In this substrate processing method, gas is sucked in the vicinity of the surface of the substrate from an opening having a width smaller than half the diameter of the substrate. After the treatment liquid is supplied, the solvent contained in the treatment liquid supplied on the surface of the substrate volatilizes to form a film of the treatment liquid. By sucking the gas in the vicinity of the surface of the substrate by the nozzle in the process of forming the film of the treatment liquid, the volatilization of the solvent at the place where the gas is sucked can be promoted more than other regions. The film thickness of the coating can be varied. In this substrate processing method, since the width of the nozzle opening is small, this variation in film thickness can occur at a part of the substrate surface. Therefore, it is possible to locally adjust the film thickness of the film formed on the surface of the substrate.

Suctioning gas from the opening of the nozzle includes sucking gas from the opening with the nozzle arranged so that the distance between the opening and the surface of the substrate is greater than 3 mm and less than 30 mm. But it may be. In this case, it is possible to more reliably cause the fluctuation of the film thickness due to the suction of the gas, and to suppress the occurrence of the unevenness of the film thickness due to the turbulence of the air flow due to the suction of the gas.

The width of the nozzle opening may be smaller than the separation distance when gas is sucked from the opening. In this case, it is possible to further suppress the occurrence of film thickness unevenness due to the turbulence of the air flow due to the suction of the gas.

The substrate processing method may further include rotating the substrate until a predetermined time elapses after the supply of the processing liquid is stopped. Suctioning gas through the opening may include sucking gas through the opening in the first half of a predetermined time. In the first half of the period in which the substrate is rotated after the treatment liquid is supplied, the volatilization of the solvent in the treatment liquid progresses more, and in the second half, the progress of the volatilization of the solvent slows down. Therefore, in the above method, since the gas is sucked in the first half portion, it is possible to more reliably cause the change in the film thickness due to the suction of the gas.

The rotation speed of the substrate when rotating the substrate in a predetermined time may be smaller than the rotation speed of the substrate when supplying the treatment liquid. In this case, gas is sucked in the vicinity of the surface of the substrate when the substrate is rotating at a rotation speed smaller than the rotation speed of the substrate when supplying the treatment liquid. Since the rotation of the substrate is slowed down, the speed of the airflow generated by the rotation of the substrate in the vicinity of the surface of the substrate is slowed down. Therefore, in the above method, more gas can be sucked in a short suction time, and the film thickness can be efficiently adjusted by suction.

The substrate processing method may further include rotating the substrate until a predetermined time elapses after the supply of the processing liquid is stopped. Suctioning gas through the opening may include sucking gas through the opening for a portion of the predetermined time. The rotation speed of the substrate when the gas is sucked for a predetermined time may be smaller than the rotation speed of the substrate during at least a part of the period when the gas is not sucked for a predetermined time. Since the rotation of the substrate is slowed down, the speed of the airflow generated by the rotation of the substrate in the vicinity of the surface of the substrate is slowed down. Therefore, in the above method, more gas can be sucked in a short suction time, and the film thickness can be efficiently adjusted by suction.

The suction of gas from the opening may include sucking gas from the opening while reciprocating the opening in a direction along the surface of the substrate. In this case, the position on the surface of the substrate to which the nozzle opening faces is not fixed, and it is possible to smooth out the tendency of the film thickness to fluctuate due to the position being fixed.

To suck the gas from the opening, perform the first suction process to suck the gas from the opening toward the position separated by the first distance along the surface of the substrate from the center of rotation of the substrate, and to suck the gas from the center of rotation of the substrate. It may include performing a second suction process after the first suction process for sucking gas from an opening toward a position separated by a second distance larger than the first distance along the surface of the substrate. It is considered that the solvent of the treatment liquid volatilizes faster on the center side of the substrate than on the outer peripheral side of the substrate. In the above method, the gas is sucked in order from the center side to the outer peripheral side of the substrate, so that the film thickness can be adjusted more reliably when the film thickness is adjusted at at least two places. Become.

The storage medium according to one exemplary embodiment is a computer-readable storage medium that stores a program for causing the apparatus to execute the substrate processing method.

The substrate processing apparatus according to one exemplary embodiment includes a rotation holding unit that holds and rotates the substrate, a processing liquid supply unit that supplies the processing liquid to the surface of the substrate held by the rotation holding unit, and a treatment liquid supply unit. The liquid processing unit includes a nozzle including an opening having a width smaller than half the diameter of the substrate, and has a gas suction unit for sucking gas from the opening, and a control unit for controlling the liquid processing unit. The control unit supplies the treatment liquid to the surface of the substrate by the treatment liquid supply unit while rotating the substrate by the rotation holding unit so as to apply the treatment liquid on the surface of the substrate, and supplies the treatment liquid. Later, with the nozzle arranged so that the opening faces the surface of the substrate, gas is sucked from the opening in the vicinity of the surface of the substrate by the gas suction unit in order. Also in this substrate processing apparatus, it is possible to locally adjust the film thickness of the coating film formed on the substrate surface, as in the above-mentioned substrate processing method.

Hereinafter, one embodiment will be described with reference to the drawings. In the description, the same elements or elements having the same function are designated by the same reference numerals, and duplicate description will be omitted.

The substrate processing system 1 shown in FIG. 1 is a system for forming a photosensitive film, exposing the photosensitive film, and developing the photosensitive film on the work W. The work W to be processed is, for example, a substrate or a substrate in which a film, a circuit, or the like is formed by being subjected to a predetermined treatment. The substrate included in the work W is, for example, a wafer containing silicon. The work W (substrate) may be formed in a circular shape. The work W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like, or may be an intermediate obtained by subjecting these substrates or the like to a predetermined treatment. The photosensitive film is, for example, a resist film.

The substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The coating / developing apparatus 2 applies a resist (chemical solution) to the surface of the work W (substrate) to form a resist film before the exposure process by the exposure apparatus 3, and develops the resist film after the exposure process. conduct. The exposure apparatus 3 is an apparatus for exposing a resist film (photosensitive film) formed on the work W. Specifically, the exposure apparatus 3 irradiates the exposed portion of the resist film with energy rays by a method such as immersion exposure.

[Board processing equipment]
Hereinafter, the configuration of the coating / developing device 2 will be described as an example of the substrate processing device. As shown in FIGS. 1 and 2, the coating / developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100 (control unit).

The carrier block 4 introduces the work W into the coating / developing device 2 and derives the work W from the coating / developing device 2. For example, the carrier block 4 can support a plurality of carriers C for the work W, and has a built-in transfer device A1 including a transfer arm. The carrier C accommodates, for example, a plurality of circular workpieces W. The transport device A1 takes out the work W from the carrier C, passes it to the processing block 5, receives the work W from the processing block 5, and returns it to the carrier C. The processing block 5 has processing modules 11, 12, 13, and 14.

The processing module 11 incorporates a liquid processing unit U1, a heat treatment unit U2, and a transfer device A3 for transporting the work W to these units. The treatment module 11 forms an underlayer film on the surface of the work W by the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 applies a treatment liquid for forming an underlayer film onto the work W. The heat treatment unit U2 performs various heat treatments accompanying the formation of the underlayer film.

The processing module 12 incorporates a liquid processing unit U1, a heat treatment unit U2, and a transfer device A3 for transporting the work W to these units. The treatment module 12 forms a resist film on the lower layer film by the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 forms a film of the treatment liquid on the surface of the work W after applying the treatment liquid for forming the resist film on the lower layer film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the resist film.

The processing module 13 incorporates a liquid processing unit U1, a heat treatment unit U2, and a transfer device A3 for transporting the work W to these units. The treatment module 13 forms an upper layer film on the resist film by the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 applies a treatment liquid for forming an upper layer film onto the resist film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 14 incorporates a liquid processing unit U1, a heat treatment unit U2, and a transfer device A3 for transporting the work W to these units. The processing module 14 uses the liquid treatment unit U1 and the heat treatment unit U2 to develop the exposed resist film and perform heat treatment associated with the development treatment. The liquid treatment unit U1 develops a resist film by applying a developing solution on the surface of the exposed work W and then rinsing it with a rinsing solution. The heat treatment unit U2 performs various heat treatments associated with the development process. Specific examples of the heat treatment include heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), and the like.

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. A transport device A7 including an elevating arm is provided in the vicinity of the shelf unit U10. The transport device A7 raises and lowers the work W between the cells of the shelf unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the work W to and from the exposure apparatus 3. For example, the interface block 6 has a built-in transfer device A8 including a transfer arm, and is connected to the exposure device 3. The transport device A8 passes the work W arranged in the shelf unit U11 to the exposure device 3. The transport device A8 receives the work W from the exposure device 3 and returns it to the shelf unit U11.

The control device 100 controls the coating / developing device 2 so as to execute the coating / developing process in the following procedure, for example. First, the control device 100 controls the transfer device A1 so as to transfer the work W in the carrier C to the shelf unit U10, and controls the transfer device A7 so as to arrange the work W in the cell for the processing module 11.

Next, the control device 100 controls the transfer device A3 so as to transfer the work W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 11. Further, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 so as to form a lower layer film on the surface of the work W. After that, the control device 100 controls the transfer device A3 so as to return the work W on which the lower layer film is formed to the shelf unit U10, and controls the transfer device A7 so as to arrange the work W in the cell for the processing module 12. ..

Next, the control device 100 controls the transfer device A3 so as to transfer the work W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 12. Further, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 so as to form a resist film on the surface of the work W. After that, the control device 100 controls the transfer device A3 so as to return the work W to the shelf unit U10, and controls the transfer device A7 so as to arrange the work W in the cell for the processing module 13.

Next, the control device 100 controls the transfer device A3 so as to transfer the work W of the shelf unit U10 to each unit in the processing module 13. Further, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 so as to form an upper layer film on the resist film of the work W. After that, the control device 100 controls the transfer device A3 so as to transfer the work W to the shelf unit U11.

Next, the control device 100 controls the transfer device A8 so as to send the work W of the shelf unit U11 to the exposure device 3. After that, the control device 100 controls the transfer device A8 so as to receive the exposed work W from the exposure device 3 and arrange it in the cell for the processing module 14 in the shelf unit U11.

Next, the control device 100 controls the transfer device A3 so as to transfer the work W of the shelf unit U11 to each unit in the processing module 14, and the liquid processing unit U1 so as to develop the resist film of the work W. And control the heat treatment unit U2. After that, the control device 100 controls the transfer device A3 so as to return the work W to the shelf unit U10, and controls the transfer device A7 and the transfer device A1 so as to return the work W to the carrier C. This completes the coating / developing process for one piece of work W.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating / developing apparatus 2 exemplified above. The substrate processing apparatus may be any as long as it includes a liquid treatment unit that forms a film of the treatment liquid after the treatment liquid is applied, and a control device that can control the liquid treatment unit.

(Liquid treatment unit)
Subsequently, an example of the liquid processing unit U1 of the processing module 12 will be described in detail with reference to FIGS. 3 and 4. The liquid treatment unit U1 holds and rotates the work W, and supplies the treatment liquid to the surface Wa of the holding work W. The liquid treatment unit U1 rotates the work W after supplying the treatment liquid to form a film of the treatment liquid. As shown in FIG. 3, the liquid treatment unit U1 has, for example, a rotation holding unit 20, a processing liquid supply unit 40, and a gas suction unit 50.

The rotation holding unit 20 holds the work W at a predetermined position and rotates the work W. The rotation holding unit 20 has, for example, a holding unit 22 and a rotation driving unit 24. The holding portion 22 supports the back surface of the work W so that the front surface Wa of the work W is horizontal. The holding portion 22 may support the back surface of the work W with the front surface Wa of the work W facing upward, and may hold the work W (back surface) by, for example, vacuum suction. The rotation drive unit 24 rotates the holding unit 22 around the vertical axis Ax by a power source such as an electric motor. As a result, the work W rotates around the axis Ax. The holding portion 22 may hold the work W so that the center of the work W substantially coincides with the axis Ax.

The treatment liquid supply unit 40 supplies the treatment liquid to the surface Wa of the work W held by the holding unit 22. The treatment liquid is a solution (resist liquid) for forming a resist film. The processing liquid supply unit 40 has, for example, a supply nozzle 42, a tank 44, a supply valve 46, a supply nozzle drive unit 48, and a supply pipeline 49.

The supply nozzle 42 discharges the processing liquid from above the surface Wa of the work W toward the surface Wa of the work W held by the holding portion 22. The supply nozzle 42 is connected to the tank 44 via the supply pipe line 49. The tank 44 contains the processing liquid, and supplies the processing liquid toward the supply nozzle 42. The supply valve 46 is provided in the supply line 49. The supply valve 46 is, for example, an air operation valve, and adjusts the opening degree in the supply pipe line 49. By controlling the supply valve 46, it is possible to switch between a state in which the processing liquid is discharged from the supply nozzle 42 and a state in which the processing liquid is not discharged from the supply nozzle 42.

The supply nozzle drive unit 48 adjusts the position of the supply nozzle 42. The supply nozzle drive unit 48 moves the supply nozzle 42 along the surface Wa of the work W by, for example, a power source such as a motor. The supply nozzle drive unit 48 may move the supply nozzle 42 along the radial direction of the work W so as to pass through the center of the work W (axis line Ax). In addition to the horizontal movement, the supply nozzle drive unit 48 may further move the supply nozzle 42 along the direction perpendicular to the surface Wa of the work W.

The gas suction unit 50 sucks gas (gas existing in the vicinity) in the vicinity of the surface Wa of the work W held by the holding unit 22. The gas suction unit 50 has, for example, a suction nozzle 52, a suction pump 54, a suction valve 56, a suction nozzle drive unit 58, and a suction pipe line 59.

The suction nozzle 52 is a nozzle that sucks gas. Specifically, the suction nozzle 52 includes the opening 52a, and sucks the gas from the opening 52a. The shape of the opening 52a (outline of the opening edge) may be any shape, and is, for example, circular, elliptical, polygonal, or slit-shaped. FIG. 4A illustrates a case where the shape of the opening 52a is circular. The width Da of the opening 52a is smaller than half the diameter of the work W. The width Da of the opening 52a is defined by the maximum width of the opening 52a. When the shape of the opening 52a is circular, the width Da of the opening 52a corresponds to the diameter of the opening 52a. For example, when the work W is circular, the width Da (for example, diameter) of the opening 52a is smaller than the radius of the work W. The width Da of the opening 52a may be 20% or less of the radius of the work W, 5% or less of the radius of the work W, or 1% or less of the radius of the work W. In one example, the width Da of the opening 52a may be 0.1 mm to 30 mm, 0.5 mm to 10 mm, or 1 mm to 5 mm.

The suction nozzle 52 (opening 52a) sucks gas from above the surface Wa of the work W in the vicinity (periphery) of the surface Wa of the work W held by the holding portion 22. For example, the suction nozzle 52 sucks the gas existing between the surface Wa and the position about 50 mm above the surface Wa of the work W. The opening 52a is arranged so as to face the surface Wa of the work W when sucking the gas. When sucking gas, the opening 52a passes through the center of the opening 52a and a virtual line along the suction direction of the gas from the opening 52a (direction perpendicular to the opening surface of the opening 52a) intersects the surface Wa. Placed in. In one example, the opening 52a is substantially parallel to the surface Wa of the work W in which the opening surface (virtual surface including the opening edge) of the opening 52a is held by the holding portion 22, as shown in FIG. 4 (b). Arranged to be.

The suction nozzle 52 is arranged so that the gap between the opening 52a and the surface Wa of the work W becomes a predetermined separation distance Dd when sucking the gas. The separation distance Dd is defined as the shortest distance between the opening 52a of the suction nozzle 52 and the surface Wa of the work W when sucking gas. The separation distance Dd is set to such an extent that the gas containing the volatile component of the solvent contained in the resist liquid (treatment liquid) is sucked from the opening 52a. The separation distance Dd may be set to be larger than 3 mm and less than 30 mm. The separation distance Dd may be set to be larger than 4 mm and less than 20 mm, or may be larger than 5 mm and set to less than 10 mm. By setting the separation distance Dd as described above, the gas in the vicinity of the surface Wa of the work W is more reliably sucked from the opening 52a.

Returning to FIG. 3, the suction nozzle 52 is connected to the suction pump 54 via the suction pipe line 59. The suction pump 54 is a pump that generates a suction force for sucking gas from the opening 52a. The suction valve 56 is provided in the suction pipe line 59. The suction valve 56 is, for example, an air operation valve, and adjusts the opening degree in the suction pipe line 59. The suction pump 54 continuously generates a suction force, and by controlling the suction valve 56, it is possible to switch between a state in which gas is sucked from the opening 52a of the suction nozzle 52 and a state in which gas is not sucked from the opening 52a. It is possible.

The suction nozzle drive unit 58 adjusts the position of the suction nozzle 52. The suction nozzle drive unit 58 moves the suction nozzle 52 along the surface Wa of the work W by, for example, a power source such as a motor. The suction nozzle driving unit 58 may move the suction nozzle 52 along the radial direction of the work W so as to pass through the center of the work W (axis line Ax). In addition to the horizontal movement, the suction nozzle driving unit 58 may further move the suction nozzle 52 along the direction perpendicular to the surface Wa of the work W. In the example shown in FIG. 3, the supply nozzle 42 and the suction nozzle 52 move individually by different drive units, but the supply nozzle 42 and the suction nozzle 52 may move together by one drive unit. For example, the supply nozzle 42 and the suction nozzle 52 are provided on a common arm (holder), and the liquid processing unit U1 may move the arm in a direction along the surface Wa of the work W by one drive unit. good.

(Control device)
As shown in FIG. 2, the control device 100 has a storage unit 102 and a control unit 104 as a functional configuration. The storage unit 102 stores a program for operating each unit of the coating / developing device 2 including the liquid processing unit U1. The storage unit 102 also stores various data (for example, information related to an instruction signal for operating the liquid processing unit U1) and information from sensors and the like provided in each unit. The storage unit 102 is, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical magnetic recording disk. The program may also be included in an external storage device separate from the storage unit 102, or an intangible medium such as a propagation signal. The program may be installed in the storage unit 102 from these other media, and the program may be stored in the storage unit 102.

The control unit 104 controls the operation of each unit of the coating / developing device 2 based on the program read from the storage unit 102. The control unit 104 supplies the treatment liquid to the surface Wa of the work W by the treatment liquid supply unit 40 while rotating the work W by the rotation holding unit 20 so as to apply the treatment liquid on the surface Wa of the work W. After the treatment liquid is supplied, the gas suction unit 50 sucks the gas in the vicinity of the surface Wa of the work W from the opening 52a with the suction nozzle 52 arranged so that the opening 52a faces the surface Wa of the work W. Do things in order.

The control device 100 is composed of one or a plurality of control computers. For example, the control device 100 has a circuit 120 shown in FIG. The circuit 120 has one or more processors 122, a memory 124, a storage 126, an input / output port 128, and a timer 132. The storage 126 has a storage medium that can be read by a computer, such as a hard disk. The storage medium stores a program for causing the control device 100 to execute the liquid treatment method described later. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 124 temporarily stores the program loaded from the storage medium of the storage 126 and the calculation result by the processor 122.

The processor 122 executes the above program in cooperation with the memory 124. The input / output port 128 inputs / outputs an electric signal to / from the liquid processing unit U1 (rotation holding unit 20, processing liquid supply unit 40, gas suction unit 50), etc., in accordance with a command from the processor 122. The timer 132 measures the elapsed time, for example, by counting a reference pulse having a fixed cycle. The hardware configuration of the control device 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which the logic circuit is integrated.

(Board processing method)
Subsequently, as an example of the substrate processing method, the liquid processing method executed in the liquid processing unit U1 will be described. FIG. 6 is a flowchart showing an example of a liquid treatment method for one work W.

The control unit 104 of the control device 100 controls the liquid treatment unit U1 so as to apply the treatment liquid on the surface Wa of the work W while the work W to be processed is held by the rotation holding unit 20 (step S01). ). The control unit 104 supplies the processing liquid to the surface Wa of the work W by the processing liquid supply unit 40 while rotating the work W to be processed by the rotation holding unit 20. The details of the coating process of the processing liquid in step S01 will be described later.

The control unit 104 controls the liquid treatment unit U1 so as to form a film of the treatment liquid on the surface Wa of the work W after the treatment liquid is applied (step S02). In the process of forming the film of the treatment liquid, the control unit 104 controls the gas suction unit 50 so as to suck the gas in the vicinity of the surface Wa of the work W from the opening 52a of the suction nozzle 52. The details of the film forming process in step S02 will be described later. This completes the liquid treatment method for one piece of work W. The liquid-treated work W is heat-treated by the heat treatment unit U2. As a result, the film of the treatment liquid is solidified, and a resist film is formed on the surface Wa of the work W.

FIG. 7 is a flowchart showing an example of the coating process of the processing liquid in step S01. First, the control unit 104 causes the rotation holding unit 20 to start the rotation of the work W in a state where the work W to be processed is placed on the holding unit 22 of the rotation holding unit 20 (step S11). In the subsequent processing, the rotation of the work W is continued until the processing for stopping the rotation of the work W is performed. The control unit 104 may control the rotation drive unit 24 so that the work W rotates at a predetermined rotation speed ω1 after the rotation of the work W starts.

Next, the control unit 104 causes the processing liquid supply unit 40 to start supplying the processing liquid to the surface Wa of the work W (step S12). For example, the control unit 104 switches the supply valve 46 from the closed state to the open state in a state where the supply nozzle 42 is arranged so as to overlap the axis Ax (rotation center of the work W) at the center where the holding unit 22 rotates. As a result, while the work W is rotating at the rotation speed ω1, the processing liquid starts to be discharged from the opening of the supply nozzle 42 toward the rotation center of the work W.

Next, the control unit 104 waits until a predetermined supply time elapses from the start of supply of the processing liquid from the supply nozzle 42 (step S13). The supply time and the rotation speed ω1 are set so that the treatment liquid can be sufficiently spread on the surface Wa of the work W. The rotation speed ω1 is predetermined, and in one example, it may be 1000 rpm to 3500 rpm, 1500 rpm to 3200 rpm, or 2000 rpm to 3000 rpm.

Next, the control unit 104 stops the supply of the processing liquid from the supply nozzle 42 to the processing liquid supply unit 40 (step S14). For example, the control unit 104 switches the supply valve 46 from the open state to the closed state. As a result, the coating process of the treatment liquid is completed for one piece of work W.

FIG. 8 is a flowchart showing an example of the film forming process of the processing liquid in step S02. After the end of step S14 described above, the control unit 104 first controls the rotation holding unit 20 so as to adjust the rotation speed of the work W (step S21). For example, as shown in FIG. 9, the control unit 104 controls the rotation drive unit 24 so that the rotation of the work W is decelerated from the rotation speed ω1 to the rotation speed ω2. The rotation speed ω2 is preset.

Next, the control unit 104 controls the suction nozzle drive unit 58 so as to arrange the suction nozzle 52 at a predetermined position (step S22). By controlling the suction nozzle driving unit 58, the control unit 104 arranges the suction nozzle 52 at a predetermined position so that the opening 52a of the suction nozzle 52 faces the surface Wa. For example, the control unit 104 controls the suction nozzle drive unit 58 so that the suction nozzle 52 is provided so that the opening surface of the opening 52a is substantially parallel to the surface Wa so that the opening 52a faces the surface Wa. (So that the opening 52a overlaps the surface Wa when viewed from above vertically).

The predetermined position where the suction nozzle 52 is arranged (hereinafter, referred to as “nozzle arrangement position”) corresponds to the position where the film thickness is adjusted by suction from the suction nozzle 52 (hereinafter, referred to as “film thickness adjustment position”). It is predetermined by the operator or the operation program. Details of the film thickness adjustment will be described later. The nozzle arrangement position is set so that the opening 52a faces the film thickness adjustment position when the suction nozzle 52 is arranged at that position. For example, when the opening surface of the opening 52a and the surface Wa are arranged substantially in parallel, the nozzle placement position is located vertically above the film thickness adjustment position (the film thickness is adjusted when viewed from above vertically). (To overlap the position) is set. The nozzle arrangement position may be set so that the separation distance Dd (see FIG. 4B) between the opening 52a and the surface Wa is larger than 3 mm and less than 30 mm.

Next, the control unit 104 waits until the suction start timing is reached (step S23). The suction start timing is set in advance, and is set after a predetermined time has elapsed after the supply of the processing liquid while rotating at the rotation speed ω1 is stopped. For example, as shown in FIG. 9, the suction start timing is set to the time t2 after the supply of the processing liquid is stopped at the time t1 and the rotation of the work W is adjusted to the rotation speed ω2.

Next (at the suction start timing), the control unit 104 causes the gas suction unit 50 to start suction of gas from the opening 52a of the suction nozzle 52 (step S24). The control unit 104 switches, for example, the suction valve 56 from the closed state to the open state. As a result, the suction force of the suction pump 54 is generated from the opening 52a, and the gas existing in the vicinity of the surface Wa of the rotating work W (near the adjustment position of the film thickness) begins to be sucked. The amount of gas sucked from the suction valve 56 (flow rate of gas sucked per unit time) is set, for example, to such an extent that the turbulence of the air flow generated by the rotation of the work W does not occur in the vicinity of the surface Wa of the work W. Has been done.

Next, the control unit 104 waits until a predetermined suction time elapses from the start of suction of the gas (step S25). Next, the control unit 104 causes the gas suction unit 50 to stop the suction from the opening 52a of the suction nozzle 52 (step S26). The control unit 104 switches, for example, the suction valve 56 from the open state to the closed state. By executing the above steps S25 and S26, the work W is rotated at the rotation speed ω2, and the suction of the gas in the vicinity of the film thickness adjusting position is performed only for the suction time. Since the gas is sucked during the rotation of the work W, the gas is sucked at a position along the circumference having a radius between the rotation center (axis line Ax) of the work W and the film thickness adjusting position.

Next, the control unit 104 waits until a predetermined drying time elapses after the adjustment of the rotation speed in step S21 is completed (step S27). Next, the control unit 104 controls the rotation holding unit 20 so as to stop the rotation of the work W (step S28). By executing the above steps S27 and S28, the control unit 104 continues the rotation of the work W by the rotation holding unit 20 until the drying time elapses after the supply of the processing liquid is stopped.

The drying time and the above-mentioned rotation speed ω2 are set to such an extent that the solvent (solvent) contained in the treatment liquid applied on the surface Wa of the work W progresses to some extent and a film of the treatment liquid can be formed on the surface Wa. Will be done. The drying time may be about 1 to 5 times the supply time for supplying the treatment liquid. The rotation speed ω2 of the work W in the drying time (more specifically, the rotation speed ω2 of the work W in the time after the adjustment of the rotation speed of the work W in the drying time) is the work W when supplying the treatment liquid. It may be smaller than the rotation speed ω1 of. For example, the rotation speed ω2 is set to about 1/5 to 2/3 of the rotation speed ω1. In one example, the rotation speed ω2 may be 200 rpm to 2300 rpm, 500 rpm to 2000 rpm, or 800 rpm to 1800 rpm.

Here, an example of the relationship between suction of gas and drying for film formation will be described in detail with reference to FIG. In FIG. 9, the time (period) during which the drying for forming the film of the treatment liquid is performed corresponds to the time (drying time Ta) from the time t1 to the time t4, and the time (period) during which the gas is sucked. Corresponds to the time from time t2 to time t3 (suction time Tb). The suction time Tb corresponds to a part of the drying time Ta. In the example shown in FIG. 9, the suction time Tb is set to be included in the first half portion of the drying time Ta. In other words, both the time t2 indicating the start time of the suction time Tb and the time t3 indicating the end time may be set to be included in the first half portion of the drying time Ta. In this case, the control unit 104 controls the gas suction unit 50 so as to suck the gas in the vicinity of the film thickness adjustment position from the opening 52a in the first half portion of the drying time Ta.

As described above, the film forming process for one work W is completed. The procedure of the liquid treatment method including the above-mentioned coating treatment and film forming treatment is an example, and can be appropriately changed. For example, some of the steps (processes) described above may be omitted, or the steps may be executed in a different order. Further, any two or more steps among the above-mentioned steps may be combined, or a part of the steps may be modified or deleted. Alternatively, other steps may be performed in addition to each of the above steps.

In the above example, the suction of gas is started after the rotation of the work W is adjusted to the rotation speed ω2, but the rotation of the work W is adjusted from the rotation speed ω1 to the rotation speed ω2 in the control unit 104. On the way, the gas suction unit 50 may start sucking the gas. The control unit 104 may start the gas suction unit 50 in the first half portion of the drying time Ta and end the gas suction in the gas suction unit 50 in the latter half portion of the drying time Ta. The control unit 104 may cause the gas suction unit 50 to suck the gas in the latter half of the drying time Ta.

In the above example, deceleration to the rotation speed ω2 is started after the supply of the processing liquid is stopped, but the control unit 104 is in the process of decelerating the rotation of the work W from the rotation speed ω1 to the rotation speed ω2, and the work W The supply of the treatment liquid to the surface Wa may be stopped by the treatment liquid supply unit 40. The control unit 104 may rotate the work W at a rotation speed lower than the rotation speed ω2 before rotating the work W at the rotation speed ω2 during the drying time Ta (after the supply of the treatment liquid is stopped). The time for rotating at this low rotation speed may be shorter than the time for rotating at the rotation speed ω2. The control unit 104 may start suction of gas from the opening 52a to the gas suction unit 50 after the end of the time for rotating at the low rotation speed or during the rotation at the low rotation speed.

Subsequently, with reference to FIG. 10, changes in the film thickness due to gas suction will be described. FIG. 10 shows the measurement results of the film thickness (film thickness distribution) when the gas is not sucked in the vicinity of the surface Wa of the work W and when the gas is sucked from the opening 52a. In FIG. 10, when the film thickness Ft0 shown by the broken line forms a film without sucking the gas existing in the vicinity of the surface Wa of the work W (steps S22 to S26 shown in FIG. 8 are omitted. Case) measurement results are shown. The film thickness Ft1 shown by the solid line shows the measurement result when the gas existing in the vicinity of the surface Wa of the work W is sucked from the suction nozzle 52 (when steps S21 to S28 shown in FIG. 8 are executed). ing. In the measurement in which the film thickness Ft1 is obtained, gas is sucked from the opening 52a with the suction nozzle 52 arranged at the center of rotation so that the opening 52a of the suction nozzle 52 faces the center of rotation of the work W. There is.

The film thicknesses Ft0 and Ft1 are measured at a plurality of measurement points included in one line corresponding to the diameter passing through the center of the work W. When the circular work W is rotated and processed, it is considered that the film thickness distribution shows the same tendency along any line passing through the center of the work W. Therefore, the tendency of the film thickness of the entire surface Wa can be estimated from the measurement results of a plurality of measurement positions along one line. By comparing the film thickness Ft0 and the film thickness Ft1, the film thickness Ft1 fluctuates in the measurement position near 0 mm (range of -25 mm to 25 mm) as compared with the film thickness Ft0 (the film thickness as a whole). Is thicker). That is, it can be seen that the film thickness fluctuates (thickens) locally in the vicinity of the film thickness adjustment position with the opening 52a facing. Since the gas flow toward the outer periphery of the work W may occur above the surface Wa as the work W rotates, the position where the film thickness fluctuates is outside the position where the opening 52a is directed (the film thickness adjustment position). It may shift to. In this case, the position where the opening 52a is directed may be adjusted in consideration of this deviation in advance. In the film thickness Ft1, a local decrease in film thickness occurs at the rotation center of the work W facing the opening 52a of the suction nozzle 52 (located vertically below the opening 52a).

[Effect of embodiment]
In the substrate processing method according to the above embodiment, gas is sucked in the vicinity of the surface Wa of the work W from the opening 52a having a width Da smaller than half the diameter of the work W. As shown in FIG. 11, after the treatment liquid is applied to the surface Wa of the work W, a liquid film LF of the treatment liquid is formed on the surface Wa. The solvent contained in the liquid film LF volatilizes into the space in the vicinity of the surface Wa (upper surface of the liquid film LF), so that the liquid film LF is solidified and a film of the treatment liquid is formed. The faster the solidification time in the process of forming the film, the larger the film thickness of the film. In the substrate treatment method, in the process of forming the coating film of the treatment liquid, the gas in the vicinity of the surface Wa of the work W is sucked from the opening 52a, so that the solvent in the region V1 in the vicinity of the place where the gas is sucked is sucked. Concentration of is lower than the concentration of the solvent in the other regions V2 around the region V1. As a result, the volatilization of the solvent in the region V1 is promoted more than in the other regions V2 around the region V1.

By promoting the volatilization of the solvent, the progress of solidification of the liquid film LF becomes faster than that of the other region V2, and as a result, the film thickness in the region V1 can be varied. In this substrate processing method, since the width Da of the opening 52a of the suction nozzle 52 is small, this variation in film thickness can occur at a part of the work W surface. Therefore, it is possible to locally adjust the film thickness of the film formed on the surface Wa of the work W. Further, by having such a configuration, it is possible to change the place where the film thickness is adjusted in the surface Wa of the work W by changing the position of the opening 52a of the suction nozzle 52. Therefore, for example, it is possible to adjust the film thickness of the coating film at a desired position on the surface Wa of the work W.

As a technique for adjusting a part of the film thickness in the work W surface, for example, as in the technique described in Patent Document 1 described above, gas is discharged from a gas discharge nozzle to a predetermined position in the work surface. Is also possible. FIG. 12A shows the measurement result of the film thickness when the gas is discharged to a predetermined position on the surface of the work. FIG. 12B shows the measurement result of the film thickness when the gas is sucked from the opening 52a. In FIG. 12A, the film thickness Fr0 shown by the broken line indicates the measurement result when the gas is not discharged from the nozzle for gas discharge, and the film thickness Fr1 shown by the solid line is from the nozzle for gas discharge. The measurement result when the gas is discharged is shown. In the measurement in which the film thickness Fr1 was obtained, the nozzle for gas discharge was placed at a position separated from the center of rotation of the work by 27 mm along the surface, and the gas was discharged vertically downward from the nozzle for gas discharge. It is done. The plurality of measurement positions on the horizontal axis are set in the same manner as the plurality of measurement positions in the measurement results shown in FIG.

In FIG. 12B, the film thickness Ft0 shown by the broken line indicates the measurement result when the gas existing in the vicinity of the surface Wa of the work W is not sucked, and the film thickness Ft1 shown by the solid line is the work. The measurement result when the gas existing in the vicinity of the surface Wa of W was sucked from the opening 52a is shown. In the measurement in which the film thickness Ft1 was obtained, the suction nozzle 52 (opening 52a) was placed at a position separated from the center of rotation of the work W by 27 mm along the surface Wa, and gas was sucked vertically upward from the opening 52a. Is being done. The plurality of measurement positions on the horizontal axis are set in the same manner as the plurality of measurement positions in the measurement results shown in FIG. Comparing the result shown in FIG. 12 (a) with the result shown in FIG. 12 (b), when the gas is discharged, the film thickness is not only near the discharge position (the position separated by 27 mm above). The whole of is thickened. On the other hand, when the gas is sucked, it can be seen that the film thickness in the vicinity of the suction position (the position separated by 27 mm above) is thicker than that in the other regions. That is, it can be seen that the film thickness is locally adjusted by sucking the gas as compared with the case of discharging the gas.

FIG. 13A shows the measurement result of the film thickness distribution on the entire surface of the work when the gas is discharged in the process of forming the film of the treatment liquid. FIG. 13B shows the measurement result of the film thickness distribution on the entire surface Wa of the work W when the gas is sucked in the process of forming the film of the treatment liquid. In the gray scale, the gray circular portion indicates the work, and the color depth corresponds to the thickness of the film thickness. In the measurement result (measurement result in gas discharge) of FIG. 13A, there is a thickness spot indicating that the degree of variation from the average value of the film thickness is large. On the other hand, in the measurement result of FIG. 13B (measurement result by gas suction), it can be seen that the occurrence of the thickness spot is suppressed. It is considered that this result is because the turbulence of the airflow caused by sucking the gas is smaller than the turbulence of the airflow caused by discharging the gas (the turbulence of the airflow near the surface of the work).

In the above embodiment, sucking gas from the opening 52a of the suction nozzle 52 causes the suction nozzle 52 so that the separation distance Dd between the opening 52a and the surface Wa of the work W is larger than 3 mm and less than 30 mm. Includes sucking gas through the opening 52a in a state where the gas is arranged. In the process of volatilizing the solvent contained in the liquid film LF (see FIG. 11) on the surface Wa, the concentration of the solvent contained in the space decreases as the distance from the upper surface of the liquid film LF increases. For example, by setting the separation distance Dd to less than 30 mm, the amount of the solvent contained in the suctioned gas can be increased, and the volatilization of the solvent by the suction of the gas can be further promoted. On the other hand, by making the separation distance Dd larger than 3 mm, it is possible to prevent the turbulence of the air flow from becoming large in the space near the upper surface of the liquid film LF due to the suction of the gas. In the above method, the separation distance Dd when sucking the gas is larger than 3 mm and less than 30 mm, so that the film thickness fluctuates more reliably due to the suction of the gas, and the airflow due to the suction of the gas occurs. It is possible to suppress the occurrence of film thickness spots caused by the disturbance of the film thickness.

In the above embodiment, the width Da of the opening 52a of the suction nozzle 52 is smaller than the separation distance Dd when the gas is sucked from the opening 52a. The smaller the opening 52a, the smaller the turbulence of the airflow due to suction. Therefore, in the above method, it is possible to further suppress the occurrence of film thickness unevenness due to the turbulence of the airflow due to the suction of gas. Become.

The substrate processing method according to the above embodiment further includes rotating the work W until a predetermined time elapses after the supply of the processing liquid is stopped. Suctioning gas from the opening 52a includes sucking gas from the opening 52a in the first half of a predetermined time. In the first half of the period in which the work W is rotated after the supply of the treatment liquid, the volatilization of the solvent in the treatment liquid (inside the liquid film LF) progresses more, and in the latter half, the progress of volatilization of the solvent slows down. Therefore, in the above method, since the gas is sucked in the first half portion, it is possible to more reliably cause the change in the film thickness due to the suction of the gas.

In the above embodiment, the rotation speed ω2 of the substrate when rotating the work W in a predetermined time is smaller than the rotation speed ω1 of the work W when supplying the processing liquid. In this case, when the work W is rotating at a rotation speed ω2 smaller than the rotation speed ω1 when supplying the treatment liquid, gas is sucked in the vicinity of the surface Wa of the work W. Since the rotation of the work W is slowed down, the speed of the airflow generated along with the rotation of the work W and flowing along the rotation direction is slowed down in the vicinity of the surface Wa of the work W. Therefore, in the above method, more gas can be sucked in a short suction time, and the film thickness can be efficiently adjusted by suction.

[Modification example]
The disclosure herein should be considered exemplary and not restrictive in all respects. Various omissions, substitutions, changes, etc. may be made to the above examples within the scope of the claims and the gist thereof.

(Modification 1)
In the film forming process described above, control may be performed to reduce the rotation speed of the work W when the gas is sucked. The control unit 104 may reduce the rotation speed of the work W during the period of sucking the gas during the drying time for forming the film. For example, as shown in FIG. 14, the control unit 104 rotates the work W from the rotation speed ω2 at substantially the same timing as the timing (time t2) at which the suction of gas from the opening 52a of the suction nozzle 52 is started. The rotation holding unit 20 is controlled so as to adjust to the rotation speed ω3. Then, the control unit 104 adjusts the rotation of the work W from the rotation speed ω3 to the rotation speed ω2 at substantially the same timing as the timing (time t3) at which the suction of the gas from the opening 52a is stopped. To control.

As described above, the rotation speed ω3 of the work W when the gas is sucked during the drying time is smaller than the rotation speed of the substrate during at least a part of the period when the gas is not sucked. In the example shown in FIG. 14, the rotation speed ω3 is a work when the gas is not sucked during the drying time (more specifically, the drying time after the rotation speed is adjusted after the supply of the treatment liquid is stopped). It is smaller than the rotation speed ω2 of W. The rotation speed ω3 is preset to a value larger than 0, may be smaller by 10 rpm to 1700 rpm than the rotation speed ω2, may be smaller by 30 rpm to 1000 rpm than the rotation speed ω2, and may be smaller than the rotation speed ω2. It may be as small as 50 rpm to 500 rpm. Also in the first modification, the control unit 104 may control the gas suction unit 50 so as to suck the gas from the opening 52a in the first half of the drying time (time from time t1 to time t4). The control unit 104 may start suction of gas from the opening 52a of the suction nozzle 52 to the gas suction unit 50 after or during the adjustment of the rotation of the work W from the rotation speed ω2 to the rotation speed ω3. ..

FIG. 15A shows the measurement result of the film thickness when the rotation speed of the work W is not reduced when the gas is sucked from the opening 52a. In FIG. 15A, the film thickness Ft0 shown by the broken line shows the measurement result when the gas existing in the vicinity of the surface Wa of the work W is not sucked. The film thickness Ft1 shown by the solid line shows the measurement result when the gas existing in the vicinity of the surface Wa of the work W is sucked from the opening 52a without lowering the rotation speed when sucking the gas. .. FIG. 15B shows the measurement result of the film thickness when the rotation speed of the work W is reduced when the gas is sucked from the opening 52a. In FIG. 15B, the film thickness Ft0 shown by the broken line shows the measurement result when the gas existing in the vicinity of the surface Wa of the work W is not sucked. The film thickness Ft2 shown by the solid line is a measurement (corresponding to the first modification) in which the rotation speed is reduced when the gas is sucked and the gas existing in the vicinity of the surface Wa of the work W is sucked from the opening 52a. The result is shown.

In both of the measurements obtained with the measurement results of FIGS. 15 (a) and 15 (b), the suction nozzle 52 is arranged at a position 27 mm away from the center of rotation of the work W, and the suction nozzle 52 is arranged vertically from the opening 52a. The gas is sucked upward. In FIGS. 15 (a) and 15 (b), the plurality of measurement positions on the horizontal axis are set in the same manner as the plurality of measurement positions in the measurement results shown in FIG. From the measurement results shown in FIGS. 15 (a) and 15 (b), the film thickness is increased by lowering the rotation speed when sucking the gas, as compared with the case where the rotation speed is not lowered when sucking the gas. It can be seen that the film thickness fluctuates more (thicker) in the vicinity of the adjustment position (the position separated by 27 mm).

The substrate processing method according to the above modification 1 further includes rotating the work W until a predetermined time elapses after the supply of the processing liquid is stopped. Suctioning gas from the opening 52a of the suction nozzle 52 includes sucking gas from the opening 52a for a part of a predetermined time. The rotation speed ω3 of the work W when the gas is sucked in the predetermined time may be smaller than the rotation speed ω2 of the work W in at least a part of the period in which the gas is not sucked in the predetermined time. .. Since the rotation of the work W is slowed down, the speed (flow velocity) of the airflow generated along with the rotation of the work W and flowing along the rotation direction is slowed down in the vicinity of the surface Wa of the work W. Therefore, in the above method, more gas can be sucked in a short suction time, and the film thickness can be efficiently adjusted by suction.

(Modification 2)
In the film forming process described above, gas suction may be performed while moving the opening 52a of the suction nozzle 52. The control unit 104 may control the gas suction unit 50 so as to suck gas from the opening 52a while reciprocating the opening 52a of the suction nozzle 52 along the surface Wa of the work W. For example, the control unit 104 drives the suction nozzle so that the position corresponding to the opening 52a in the surface Wa of the work W (the position where the openings 52a overlap when viewed from above vertically) reciprocates along the radius of the work W. The suction nozzle 52 may be reciprocated by the portion 58.

As shown in FIG. 16, the range in which the suction nozzle 52 is reciprocated (hereinafter referred to as “sweep range ds”) is smaller than the distance from the axis Ax to the peripheral edge Wb (for example, the radius of the work W). The sweep range ds is preset, and is, for example, larger than the width Da of the opening 52a of the suction nozzle 52 (see FIG. 4A) and smaller than the radius of the work W. In one example, the upper limit of the sweep range ds may be 2 times or less of the width Da, 5 times or less of the width Da, or 20 times or less of the width Da. The control unit 104 reciprocates the suction nozzle 52 by the suction nozzle drive unit 58 so that the number of reciprocations of the opening 52a in the sweep range ds is at least two times when the gas is sucked from the opening 52a of the suction nozzle 52. You may move it. For example, the control unit 104 may reciprocate the suction nozzle 52 by the suction nozzle drive unit 58 at a speed similar to the movement speed when the suction nozzle 52 is moved to the arrangement position at the time of suction.

FIG. 17A shows the measurement result of the film thickness when the opening 52a is not reciprocated when the gas is sucked from the opening 52a. In FIG. 17A, the film thickness Ft0 shown by the broken line shows the measurement result when the gas existing in the vicinity of the surface Wa of the work W is not sucked. The film thickness Ft1 shown by the solid line shows the measurement result when the gas existing in the vicinity of the surface Wa of the work W is sucked from the opening 52a without reciprocating the opening 52a. FIG. 17B shows the measurement result of the film thickness when the opening 52a is reciprocated when the gas is sucked from the opening 52a. In FIG. 17B, the film thickness Ft0 shown by the broken line shows the measurement result when the gas existing in the vicinity of the surface Wa of the work W is not sucked. The film thickness Ft3 shown by the solid line shows the measurement result (corresponding to the modification 2) when the opening 52a is reciprocated and the gas existing in the vicinity of the surface Wa of the work W is sucked from the opening 52a. ..

In the measurement in which the measurement result of FIG. 17A is obtained, the gas is sucked vertically upward from the opening 52a with the suction nozzle 52 arranged at the axis Ax (the position overlapping the rotation center of the work W). There is. In the measurement in which the measurement result of FIG. 17B was obtained, gas was sucked vertically upward from the opening 52a while reciprocating the opening 52a in the sweep range ds centered on the axis Ax (rotation center) of the work W. Has been done. In FIGS. 17 (a) and 17 (b), the plurality of measurement positions on the horizontal axis are set in the same manner as the plurality of measurement positions in the measurement results shown in FIG.

In the measurement result of the film thickness Ft1 shown in FIG. 17A, the film thickness is reduced at the measurement position 0 mm (center of rotation). This phenomenon occurs in the region V1 shown in FIG. 11, when the gas containing the solvent is sucked from the opening 52a, the solvent flows from the periphery of the region V1 and the volatilization of the solvent is difficult to proceed near the center of the region V1. It is thought that this is due to. On the other hand, in the measurement result of the film thickness Ft3 shown in FIG. 17B, the film thickness does not decrease in the vicinity of the measurement position 0 mm as in the measurement result shown in FIG. 17A.

In the substrate processing method according to the above modification 2, sucking gas from the opening 52a of the suction nozzle 52 sucks gas from the opening 52a while reciprocating the opening 52a in the direction along the surface Wa of the work W. Including letting. In this case, the position of the surface Wa of the work W where the opening 52a of the suction nozzle 52 faces is not fixed, and it is possible to smooth out the tendency of the film thickness to fluctuate due to the position being fixed. ..

(Modification 3)
In the series of treatments of the above-mentioned film forming method, gas suction may be performed at two film adjusting positions. Returning to FIG. 16, the control unit 104 adjusts the film thickness between the film thickness adjustment position P1 and the film thickness adjustment position P2 within the drying time for rotating the work W for forming the film thickness of the treatment liquid. The liquid treatment unit U1 may be controlled so that the gas is sucked from the opening 52a. The film thickness adjustment position P1 is a position separated from the rotation center of the work W (axis line Ax) by a distance r1 along the surface Wa, and the film thickness adjustment position P2 is from the rotation center of the work W (axis line Ax). It is a position separated by a distance r2 along the surface Wa. In this case, the film thickness is adjusted by sucking gas in the vicinity of each of the film thickness adjusting positions P1 and P2. The distance r2 may be larger than the distance r1 and the distance r1 may be zero (the film thickness adjustment position P1 may be the center of rotation).

The control unit 104 may suck gas by the gas suction unit 50 in the order from the rotation center of the work W toward the peripheral edge Wb of the work W with respect to the adjustment positions P1 and P2 of the coating film at the two locations, and the control unit 104 may suck the gas from the peripheral edge Wb of the work W. Gas may be sucked by the gas suction unit 50 in the order toward the center of rotation of the work W. In the above-mentioned liquid treatment method, the treatment liquid is sequentially supplied from the center side of the work W to the outer peripheral side, and it is considered that the solvent of the treatment liquid on the center side volatilizes faster than the outer peripheral side of the work W. Since it is considered that the film thickness adjustment range becomes larger when the gas is sucked as the solvent volatilization progresses, the control unit 104 determines the film thickness adjustment position P1 and the film thickness with respect to the film thickness adjustment positions at the two locations. Gas may be sucked by the gas suction unit 50 in the order of the thickness adjustment position P2.

More specifically, the control unit 104 first performs a first suction process of sucking the gas (existing in the vicinity) in the vicinity of the film thickness adjustment position P1 by the gas suction unit 50. In the first suction process, the control unit 104 is in a state where the opening 52a is directed to the adjustment position P1 of the film thickness separated by the distance r1 (first distance) along the surface Wa from the rotation center of the work W, and the gas suction unit 104 is used. Gas is sucked from the opening 52a by 50. The control unit 104 uses the suction nozzle drive unit 58 to set the suction nozzle 52 so that, for example, a virtual line passing through the center of the opening 52a and along the direction perpendicular to the opening surface of the opening 52a intersects the film thickness adjusting position P1. Deploy. When the suction nozzle 52 is provided so that the opening surface of the opening 52a and the surface Wa are substantially parallel to each other, the control unit 104 adjusts the thickness of the suction nozzle 52 in the nozzle arrangement position in the first suction process. The suction nozzle 52 is arranged by the suction nozzle drive unit 58 so as to be located vertically above the position P1.

After performing the first suction process, the control unit 104 performs a second suction process of sucking the gas (existing in the vicinity) in the vicinity of the film thickness adjustment position P2 into the gas suction unit 50. In the second suction process, the control unit 104 is in a state where the opening 52a is directed to the adjustment position P2 of the film thickness separated by the distance r2 (second distance) along the surface Wa from the rotation center of the work W, and the gas suction unit 104 is used. Gas is sucked from the opening 52a by 50. The control unit 104 uses the suction nozzle drive unit 58 to set the suction nozzle 52 so that, for example, a virtual line passing through the center of the opening 52a and along the direction perpendicular to the opening surface of the opening 52a intersects the film thickness adjusting position P2. Deploy. When the suction nozzle 52 is provided so that the opening surface of the opening 52a and the surface Wa are substantially parallel to each other, the control unit 104 adjusts the thickness of the suction nozzle 52 in the nozzle arrangement position in the second suction process. The suction nozzle 52 is arranged by the suction nozzle drive unit 58 so as to be located vertically above the position P2.

In the film forming method according to the modification 3, the control unit 104 reciprocates the opening 52a in the sweep range ds for at least one of the film thickness adjustment positions P1 and P2 at the two locations, as in the modification 2. However, the gas may be sucked by the gas suction unit 50. The control unit 104 may suck the gas by the gas suction unit 50 so that the time for sucking the gas (suction time) is different from each other at the two film thickness adjustment positions P1 and P2. The control unit 104 may suck gas from the opening 52a by the gas suction unit 50 at three or more positions for adjusting the film thickness.

FIG. 18A shows the measurement results of the film thickness when the gas is sucked in the order from the peripheral edge Wb of the work W toward the rotation center of the work W at the two film thickness adjustment positions P1 and P2. There is. In FIG. 18A, the film thickness Ft0 shown by the broken line shows the measurement result when the gas existing in the vicinity of the surface Wa of the work W is not sucked. The film thickness Ft4 shown by the solid line shows the measurement result when the gas existing in the vicinity of the surface Wa is sucked from the opening 52a in the order of the film thickness adjustment position P2 and the film thickness adjustment position P1. FIG. 18B shows the measurement results of the film thickness when the gas is sucked in the order from the rotation center of the work W toward the peripheral edge Wb of the work W at the two film thickness adjustment positions P1 and P2. There is. In FIG. 18B, the film thickness Ft0 shown by the broken line shows the measurement result when the gas existing in the vicinity of the surface Wa of the work W is not sucked. The film thickness Ft5 shown by the solid line shows the measurement result when the gas existing in the vicinity of the surface Wa is sucked from the opening 52a in the order of the film thickness adjustment position P1 and the film thickness adjustment position P2.

In the measurement in which the measurement results shown in FIGS. 18 (a) and 18 (b) are obtained, the film thickness adjustment position P1 is set to a distance r1 from the center of rotation of 0 mm in both cases, and the film is formed. The thickness adjustment position P2 is set so that the distance r2 from the center of rotation is 75 mm. In FIGS. 18 (a) and 18 (b), the plurality of measurement positions on the horizontal axis are set in the same manner as the plurality of measurement positions in the measurement results shown in FIG. From the measurement result of FIG. 18A, it can be seen that the degree of fluctuation in the film thickness is small in the vicinity of the second film thickness adjustment position P1. It is considered that the solidification of the liquid film LF of the treatment liquid (volatilization of the solvent) proceeds in order from the center side to the outer peripheral side of the work W. Therefore, it is considered that if the center side is performed later, the progress of the volatilization of the solvent has already slowed down, and as a result, the fluctuation of the film thickness becomes small. On the other hand, from the measurement result of FIG. 18B, the film thickness associated with the suction of gas is higher than that of the measurement result of FIG. 18A at any of the two film thickness adjustment positions P1 and P2. It can be seen that the fluctuation is large.

In the substrate processing method according to the above modification 3, the suction of gas from the opening 52a of the suction nozzle 52 is separated from the center of rotation of the work W by a first distance (distance r1) along the surface Wa of the work W. The first suction process for sucking gas from the opening 52a toward the position is performed, and the work W is separated from the center of rotation by a second distance (distance r2) larger than the first distance along the surface Wa of the work W. This includes performing a second suction process for sucking gas from the opening 52a toward the position after the first suction process. It is considered that the solvent in the treatment liquid volatilizes faster on the center side of the work W than on the outer peripheral side of the work W. In the above method, the gas is sucked in order from the center side to the outer peripheral side of the work W, so that the film thickness can be adjusted more reliably when the film thickness is adjusted at at least two places. It becomes.

(Other variants)
In the above-described embodiments and modifications 1 to 3, the liquid treatment for forming a film of the resist liquid is exemplified, but the type of the treatment liquid used for the liquid treatment to which the technique according to the present disclosure is applied is the resist liquid. It may be a solution other than. For example, in the liquid treatment unit U1 forming the lower layer film of the treatment module 11, the film thickness may be locally adjusted by sucking gas from the gas suction unit 50. In the liquid treatment unit U1 forming the upper film of the treatment module 13, the film thickness may be locally adjusted by sucking gas from the gas suction unit 50.

1 ... Substrate processing system, 2 ... Coating / developing device, W ... Work, Wa ... Surface, U1 ... Liquid processing unit, 20 ... Rotation holding unit, 40 ... Processing liquid supply unit, 50 ... Gas suction unit, 52 ... Suction nozzle , 52a ... opening, Da ... width, Dd ... separation distance, 100 ... control device, ω1, ω2, ω3 ... rotation speed, r1, r2 ... distance.

Claims (10)

Supplying the treatment liquid to the surface of the substrate while rotating the substrate so as to apply the treatment liquid on the surface of the substrate.
After the treatment liquid is supplied, a nozzle including an opening having a width smaller than half the diameter of the substrate is arranged so that the opening faces the surface of the substrate, and the gas in the vicinity of the surface of the substrate from the opening. Substrate processing methods including sucking. Inhaling the gas from the opening means that the gas is sucked from the opening in a state where the nozzle is arranged so that the separation distance between the opening and the surface of the substrate is larger than 3 mm and less than 30 mm. The substrate processing method according to claim 1, which comprises sucking. The substrate processing method according to claim 2, wherein the width of the opening is smaller than the separation distance when the gas is sucked from the opening. Further including rotating the substrate until a predetermined time elapses after the supply of the treatment liquid is stopped.
The substrate processing method according to any one of claims 1 to 3, wherein sucking the gas from the opening includes sucking the gas from the opening in the first half of the predetermined time. The substrate processing method according to claim 4, wherein the rotation speed of the substrate when rotating the substrate in the predetermined time is smaller than the rotation speed of the substrate when supplying the treatment liquid. Further including rotating the substrate until a predetermined time elapses after the supply of the treatment liquid is stopped.
Suctioning the gas through the opening includes sucking the gas through the opening for a portion of the predetermined time.
The rotation speed of the substrate when the gas is sucked in the predetermined time is smaller than the rotation speed of the substrate in at least a part of the period in which the gas is not sucked in the predetermined time. The substrate processing method according to any one of claims 1 to 3. One of claims 1 to 6, wherein sucking the gas from the opening includes sucking the gas from the opening while reciprocating the opening in a direction along the surface of the substrate. The substrate processing method described in 1. Inhaling the gas from the opening
The first suction process of sucking the gas from the opening toward a position separated by the first distance along the surface of the board from the center of rotation of the board is performed.
After the first suction process, the second suction process for sucking the gas from the opening toward a position separated from the center of rotation of the substrate by a second distance larger than the first distance along the surface of the substrate is performed. The substrate processing method according to any one of claims 1 to 7, which comprises the above. A computer-readable storage medium in which a program for causing an apparatus to execute the substrate processing method according to any one of claims 1 to 8 is stored. A rotation holding unit that holds and rotates the substrate, a processing liquid supply unit that supplies the processing liquid to the surface of the substrate held by the rotation holding unit, and a width smaller than half the diameter of the substrate. A liquid treatment unit including a nozzle including an opening and having a gas suction unit for sucking gas from the opening, and a liquid treatment unit.
A control unit that controls the liquid treatment unit is provided.
The control unit is
The treatment liquid is supplied to the surface of the substrate by the treatment liquid supply unit while the substrate is rotated by the rotation holding portion so as to apply the treatment liquid on the surface of the substrate.
After the treatment liquid is supplied, the nozzle is arranged so that the opening faces the surface of the substrate, and the gas in the vicinity of the surface of the substrate is sucked from the opening in order by the gas suction portion. Board processing equipment.

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