JP2022009504A - Plasma processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce pressure bias in a processing chamber.

SOLUTION: An exhaust device includes an exhaust mechanism that is arranged coaxially on the outer periphery of a body to be treated and has a first blade member and a second blade member, at least one of which can rotate in an exhaust space of a processing vessel in which the body to be treated is treated in a processing space in a vacuum atmosphere and an exhaust unit that is connected to the exhaust space and exhausts the inside of the processing vessel downstream of the exhaust mechanism.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2022,JPO&INPIT

Description

The present invention relates to a plasma processing apparatus.

In semiconductor manufacturing, in a processing device that processes an object to be processed in a processing chamber having a vacuum atmosphere, an exhaust device is provided to control the processing chamber to a predetermined pressure. Various types of exhaust devices have been proposed (see, eg, Patent Document 1).

Japanese Unexamined Patent Publication No. 2000-183037

If the pressure in the treatment chamber is uneven, the treatment of the object to be processed becomes non-uniform. Therefore, it is preferable that the exhaust device is installed at a position where the pressure in the treatment chamber is not biased. For example, when the exhaust device is attached to the exhaust port provided on the outer peripheral side of the side wall or the bottom of the processing device, the exhaust gas is sucked in the lateral direction or the outer peripheral direction. Therefore, the pressure in the exhaust space is biased, and as a result, the pressure may be biased even in the processing chamber.

However, under the processing device, a high-frequency power supply, a power feeding rod, or the like may be arranged, or a piping for cooling gas for controlling the temperature of the object to be processed, a piping for a refrigerant, or the like may be installed. For this reason, a space for arranging these devices is required, and it may be difficult to arrange the exhaust device at a position below the center of the processing device where the pressure in the processing chamber is unlikely to be biased.

In response to the above problems, one aspect of the present invention is to reduce the pressure bias in the processing chamber.

In order to solve the above problems, according to one embodiment, a plurality of plasma processing containers each having a substrate support inside and the plurality of plasma processing containers are arranged around the substrate support of each of the plurality of plasma processing containers. It includes a moving blade and a stationary blade, a control unit that controls the rotational speed of the moving blade, and an exhaust space that is arranged below the plurality of plasma processing containers and is connected to each of the plurality of plasma processing containers. , Plasma processing equipment is provided.

According to one aspect, the pressure bias in the processing chamber can be reduced.

The figure which shows an example of the processing apparatus which concerns on one Embodiment. It is a figure which shows the A1-A1 cross section and A2-A2 cross section of FIG. It is a figure which shows the BB cross section of FIG. The figure which shows an example of the processing apparatus which concerns on the modification of one Embodiment. The flowchart which shows an example of the exhaust gas processing which concerns on one Embodiment. The figure which shows an example of the transfer of the wafer at the time of loading and unloading which concerns on one Embodiment. The figure which shows an example of the transfer of the wafer at the time of loading and unloading which concerns on one Embodiment. The figure which shows an example of the transfer of the wafer at the time of loading and unloading which concerns on one Embodiment. The figure which shows an example of the transfer of the wafer at the time of loading and unloading which concerns on one Embodiment.

Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In the present specification and the drawings, substantially the same configurations are designated by the same reference numerals to omit duplicate explanations.

[Overall configuration of processing equipment]
First, the batch-type processing apparatus according to the embodiment of the present invention and the batch-type processing apparatus according to the comparative example will be described in comparison with each other. FIG. 1A is an example of a batch-type processing apparatus 9 according to a comparative example, and FIG. 1B is an example of a batch-type processing apparatus 1 according to an embodiment of the present invention.

The batch-type processing device 9 according to the comparative example and the batch-type processing device 1 according to the present embodiment are devices capable of simultaneously processing a plurality of semiconductor wafers W (hereinafter referred to as “wafers”). The processing apparatus 1 and the processing apparatus 9 have, for example, a cylindrical processing container (plasma processing container) 10 made of aluminum whose surface has been anodized (anodized). The processing container 10 is grounded.

The processing container 10 isolates the processing space for processing the wafer W into a plurality of processing chambers by the cylindrical wall 29. In this example, two processing chambers are provided in addition to the processing chambers 101 and 102 by the four cylindrical walls 29, and four wafers W can be processed at the same time. However, the number of processing rooms is not limited to four. Further, for convenience of explanation, the configurations of the two processing chambers 101 and 102 will be described below, and the configurations of the remaining two processing chambers existing in the processing apparatus 1 according to the present embodiment will not be described, but the processing chambers will be described. It shall have the same structure and the same function as 101 and 102.

The difference between the processing apparatus 9 according to the comparative example of FIG. 1A and the processing apparatus 1 according to the present embodiment of FIG. 1B will be described. The first difference is that in the processing apparatus 1 according to the present embodiment of FIG. 1B, the exhaust spaces 17 and 18 below the mounting bases (board support bases) 12 and 13 on which the wafer W is placed are placed. The processing device 9 according to the comparative example of FIG. 1A does not have an exhaust mechanism in the exhaust spaces 17 and 18, whereas the processing device 9 according to the comparative example of FIG. 1A has an exhaust mechanism 3. The exhaust mechanism 3 has a set of the moving blade 30 and the stationary blade 31 in the processing chamber 101, and has a set of the moving blade 32 and the stationary blade 33 in the processing chamber 102.

The second difference is that the processing apparatus 9 according to the comparative example has baffle plates 21 and 22 for partitioning the exhaust spaces 17 and 18 and the processing spaces (processing chambers 101 and 102). The processing device 1 according to the embodiment does not have a baffle plate. However, the processing apparatus 1 according to the present embodiment may have a baffle plate.

Other configurations are the same. Briefly, wafers W are mounted on the mounting tables 12 and 13, respectively. Gas shower heads 23 and 24 for introducing the processing gas into the processing container 10 are provided at positions facing the mounting tables 12 and 13 on the ceiling of the processing container 10. The processing gas is introduced into the gas shower heads 23 and 24 from the gas supply unit 16. The processing gas is introduced into the processing chambers 101 and 102 in a shower shape from a large number of gas discharge holes 23a and 24a provided on the lower surfaces of the gas shower heads 23 and 24.

The feeding rods 26 and 27 are connected to the mounting tables 12 and 13, and the high frequency power supplies 14 and 15 are further connected via a matching circuit. By supplying high-frequency power from the high-frequency power supplies 14 and 15 to the mounting tables 12 and 13, plasma of the processing gas is generated in the processing chambers 101 and 102, and the wafer W is subjected to etching or the like by the plasma. To. The high-frequency power supplies 14 and 15 may apply predetermined high-frequency power to the mounting tables 12 and 13 that function as lower electrodes, or may be applied to the gas shower heads 23 and 24 that function as upper electrodes.

A loading / unloading outlet 28 for loading / unloading the wafer W is provided on the side wall of the processing container 10. Further, the wall 29 that separates the plurality of processing chambers is provided with an inlet / outlet 35 for the wafer W. Below the mounting tables 12 and 13, the processing container 10 protrudes in a cylindrical shape toward the processing chambers 101 and 102 and is connected to the outer periphery of the mounting tables 12 and 13. As a result, an atmospheric space is formed below the mounting tables 12 and 13, and the feeding rods 26 and 27 and the high-frequency power supplies 14 and 15 are arranged, and the cooling gas piping for temperature control and the refrigerant piping of the object to be processed are arranged. Can be placed.

The exhaust spaces 17 and 18 below the processing chambers 101 and 102 are formed in an annular shape in the circumferential direction on the outer peripheral side of the wafer W. The exhaust spaces 17 and 18 communicate with each other below the wall 29 that separates the treatment chambers 101 and 102, and are exhausted by the APC (Adaptive Pressure Control) 19 and the turbo molecular pump 20 via the exhaust port. The APC 19 is a controller capable of controlling the pressure by controlling the regulating valve. The turbo molecular pump 20 is, for example, roughly drawn by a dry pump and then evacuated in the processing container 10. The APC 19 and the turbo molecular pump 20 are examples of an exhaust unit arranged on the downstream side of the exhaust mechanism 3. The exhaust unit does not have to have the APC19.

Since the turbo molecular pump 20 is shared with the plurality of processing chambers 101 and 102, the exhaust gas is sucked in a biased manner toward the exhaust spaces 17 and 18 on the central side. As a result, the gas flow approaches the turbo molecular pump 20 side. Then, in the case of the processing apparatus 9 according to the comparative example of FIG. 1 (a), the pressure of the exhaust spaces 17 and 18 on the turbo molecular pump 20 side shown on the inside of the paper surface is the pressure of the exhaust spaces 17 and 18 on the opposite side shown on the outside of the paper surface. It will be lower than the pressure of 18. As a result, the same pressure distribution as the pressure distribution in the exhaust space is generated in the processing chambers 101 and 102. As a result, in the processing apparatus 9 according to the comparative example of FIG. 1A, the etching rate and the like vary in the circumferential direction due to the non-uniformity of the pressure distribution in the processing chambers 101 and 102, and the wafer W is uniformly processed. It becomes difficult to do.

Therefore, in the processing apparatus 1 according to the present embodiment of FIG. 1B, the uniformity of the pressure distribution in the processing container 10 is improved, the variation in the etching rate and the like in the circumferential direction is eliminated, and the wafer W is uniformly processed. An exhaust mechanism 3 is provided for this purpose. That is, the exhaust device for exhausting the processing device 1 according to the present embodiment includes an exhaust mechanism 3, an APC 19 provided on the downstream side of the exhaust mechanism 3, and a turbo molecular pump 20. However, the exhaust device according to this embodiment does not have to have APC19.

In the exhaust mechanism 3, the moving blades 30 and the stationary blades 31 and the moving blades 32 and the stationary blades 33 are each paired, and the moving blades and the stationary blades are alternately arranged in multiple stages. The rotor blades 30 and 32 are rotatable with respect to the central axis of the mounting tables 12 and 13 (wafer W mounted on the mounting tables 12 and 13). The vanes 31 and 33 are fixed to the wall 29 of the processing container 10. An example of a first blade member and a second blade member in which the moving blade 30, the stationary blade 31, and the moving blade 32 and the stationary blade 33 are arranged coaxially on the outer peripheral side of the wafer W, and at least one of them is rotatable. Is. Further, the exhaust mechanism 3 may have a structure that can be removed and mounted as a set of units.

According to this, in the processing apparatus 1 according to the present embodiment, when the moving blades 30 and 32 are not rotated, the moving blades 30 and 32 and the stationary blades 31 and 33 are present in the exhaust spaces 17 and 18, so that gas is generated. It is exhausted through the narrow space between the moving blades 30, 32 and the stationary blades 31, 33. Therefore, it becomes difficult for the gas to flow. As a result, the pressures in the exhaust spaces 17 and 18 become uniform. As a result, the pressure uniformity can be achieved even on the processing space side.

However, if the blades 30 and 32 are not rotated, the gas exhaust efficiency will deteriorate. Therefore, it is preferable to rotate the blades 30 and 32 to create a gas flow in the exhaust spaces 17 and 18. As a result, the pressure upstream of the exhaust mechanism 3 becomes uniform, and as a result, a plurality of processing chambers can be evacuated at the same time by the turbo molecular pump 20 while ensuring the uniformity of the pressure in the processing space. As a result, in the processing apparatus 1 according to the present embodiment, the uniformity of the pressure distribution in the processing container 10 can be improved, and the uniformity of the treatment such as the etching rate can be achieved.

The processing apparatus 1 according to the present embodiment has the same number of moving blades and stationary blades as the number of wafers W that can be processed at the same time. For example, if there are four processing chambers, the processing apparatus 1 has four sets of moving blades and a set of stationary blades. The rotation speeds of the four blades can be controlled independently. Independent control of each blade is executed by the control unit 50. Further, the number of exhaust ports provided in the processing container 10 and connected to the turbo molecular pump 20 may be one or a plurality.

The control unit 50 controls the overall operation of the processing device 1. The control unit 50 has a CPU (Central Processing Unit) and a memory such as a ROM (Read Only Memory) and a RAM (Random Access Memory). The CPU executes a predetermined process such as etching on the wafer W according to the recipe stored in the memory. The recipe includes process time, pressure (gas exhaust), high frequency power and voltage, various gas flow rates, processing container temperature (upper electrode temperature, processing container side wall temperature, wafer W temperature, etc.), which are device control information for process conditions. Electrostatic chuck temperature, etc.), set temperature of the refrigerant, etc. are set. The recipes showing these programs and process conditions may be stored in a hard disk or a semiconductor memory. Further, the recipe may be set in a predetermined position and read out in a state of being housed in a storage medium readable by a portable computer such as a CD-ROM or a DVD.

Further, the memory stores information on predetermined conditions for independently controlling the number of blades according to the number of processing chambers. The predetermined conditions are at least one of the pressure conditions of each processing chamber set in the recipe used when processing the wafer W, the process conditions such as the gas flow rate, the gas supply timing, and the gas exhaust timing. It may be. The control unit 50 may change the rotation speed per unit time for rotating each rotor blade based on the predetermined conditions while controlling the exhaust gas in the processing container 10 by controlling the turbo molecular pump 20.

The control unit 50 acquires the pressure of each processing chamber from the pressure sensors attached to each of the plurality of processing chambers, and controls the drive unit 51 according to the acquired pressure of each processing chamber to rotate each rotor blade. The number of revolutions per unit time may be changed. For example, the control unit 50 may control the drive unit 51 to independently control the rotor that rotates the rotor blades of each processing chamber according to the pressure difference between the measured pressures of the plurality of processing chambers.

(Arrangement and operation of moving blades and stationary blades)
The arrangement and operation of the moving blade and the stationary blade will be described with reference to FIGS. 2 and 3. FIG. 2A is a diagram showing a cross section of A1-A1 of FIG. FIG. 2B is a diagram showing a cross section of A2-A2 of FIG. FIG. 3 is a diagram showing a cross section taken along the line BB of FIG.

First, referring to FIG. 2, FIGS. 2A and 2B are cross sections of the processing chamber 101. Since the cross section of the processing chamber 102 has the same structure, the description thereof is omitted here. In the processing chamber 101, the central axis O is a common axis in the cylindrical wall of the wafer W, the mounting table 12, and the processing chamber 101. The moving blade 30 and the stationary blade 31 are arranged coaxially with respect to the central axis 0.

The moving blade 30 and the stationary blade 31 may be made of aluminum, or the surface of the aluminum may be anodized. The surface of aluminum of the moving blade 30 and the stationary blade 31 may be coated with plating such as nickel.

The rotor blades 30 are outwardly uniform on the first base material 30b, which is below the wafer W (and the mounting table 12) and is isolated on the outer periphery of the wafer W, and the first base material 30b. It has a large number of first blades 30a mounted at intervals. The first base material 30b is a ring-shaped member having a space larger than the area of the wafer W and the mounting table 12.

The stationary blade 31 has a second base material 31b and a large number of second blades 31a attached to the second base material 31b inward at equal intervals. The second base material 31b is a ring-shaped member having a space larger than the area of the moving blade 30.

The first base material 30b is arranged on the wafer W side and is rotatable with respect to the central axis O. The second base material 31b is fixed to the wall of the processing container 10 and has a structure that does not rotate.

The first blade 30a and the second blade 31a have an obliquely downwardly inclined surface, and are arranged in the circumferential direction about the central axis 0 of the wafer W. In the present embodiment, as shown in FIGS. 2 and 3, the first blade 30a is inclined outward at an angle at which gas molecules can easily pass.

In the present embodiment, the second blade 31a is arranged inwardly at an angle at which gas molecules do not easily go backwards.

The first blade 30a and the second blade 31a are provided in multiple stages and are arranged alternately. FIG. 3 shows a first blade 30a and a second blade 31a in two stages. The upper side of the paper surface is the front stage side (high vacuum side) of the exhaust mechanism 3, and the lower side of the paper surface is the rear stage side. In this embodiment, the moving blade 30 is rotated and the stationary blade 31 is fixed. When the rotation direction of the rotor blade 30 goes from the right to the left of the paper surface, the relationship between the rotation direction and the inclination of the first blade 30a and the second blade 31a is shown in FIG. Gas molecules (gas) flying from the high vacuum side tend to scatter in various directions when they enter the rotor blade 30 and then leave. However, due to the inclination of the first blade 30a and the second blade 31a and the rotation of the first blade 30a, the gas molecules are directed toward the rear stage of the exhaust mechanism 3 and at the same time toward the direction in which they easily pass through the stationary blade 31. Be done. Further, the gas molecules that have passed through the stationary blade 31 from the rear stage side and have traveled backward collide with the moving blade 30 and are directed toward the rear stage again. The inclinations of the first blade 30a and the second blade 31a have an angle at which gas molecules easily pass on the front stage side and an angle at which gas molecules do not easily go backward on the rear stage side.

When the first base material 30b is rotated by the drive of the drive unit 51 and a large number of the first blades 30a are rotated, the first blade 30a cooperates with the stationary second blade 31a to exhaust the air. Can be aspirated downward in the molecular region. In the processing apparatus 1 according to the present embodiment configured as described above, the first base material 30b is rotated and the turbo molecular pump 20 is driven for processing before the start of the processing such as etching and during the processing. The inside of the container 10 is evacuated and maintained in a high vacuum state.

The exhaust mechanism 3 and the turbo molecular pump 20 having such a configuration are an example of an exhaust device that exhausts the inside of the processing container that processes the object to be processed in a vacuum atmosphere. According to such an exhaust device, the pressures of the exhaust spaces 17 and 18 become uniform while the turbo molecular pump 20 simultaneously evacuates a plurality of processing chambers, whereby the pressure in the processing spaces of the processing chambers 101 and 102 becomes uniform. It is possible to improve the property and achieve the uniformity of processing.

In the present embodiment, the exhaust mechanism 3 has a configuration in which the moving blade 30 is arranged inside the stationary blade 31, but the present invention is not limited to this. For example, the arrangement of the moving blade 30 and the stationary blade 31 may be exchanged, and the moving blade 30 may be arranged outside the stationary blade 31. However, considering the energy for moving the moving blade 30, it is preferable to arrange the moving blade 30 inside the stationary blade 31. Further, the exhaust mechanism 3 may be provided with two moving blades 30 instead of arranging the moving blades 30 and the stationary blades 31. In this case, the rotation directions of the two rotor blades 30 are controlled in opposite directions. As a result, even if the rotation speed of each moving blade 30 is halved, the same exhaust effect as in the case of the combination of the moving blade 30 and the stationary blade 31 can be obtained.

[Modification example]
Next, a modified example of the exhaust device will be described with reference to FIG. FIG. 4 is a diagram showing an example of a processing device 1 equipped with an exhaust device according to modifications 1 to 3 of the present embodiment. FIG. 4A is a diagram showing a processing device 1 equipped with an exhaust device according to a modification 1 of the present embodiment. In the processing device 1 according to the first modification, the exhaust device has a baffle plate 21 and 22 on the upstream side of the exhaust mechanism 3 in addition to the exhaust mechanism 3, the APC 19, and the turbo molecular pump 20. The baffle plates 21 and 22 are provided in each of the processing chambers 101 and 102 so as to surround the mounting tables 12 and 13, respectively. The baffle plates 21 and 22 partition the inside of the processing container 10 into a processing space (processing chambers 101 and 102) for processing the wafer W and exhaust spaces 17 and 18 above the exhaust mechanism 3. A plurality of through holes are formed in the baffle plates 21 and 22.

The baffle plates 21 and 22 may be made of aluminum. The baffle plates 21 and 22 may be coated with aluminum having corrosion resistance against halogen. For example, the surface of aluminum may be anodized, or aluminum may be sprayed with _{Y2O3 , Al2O3 ,} or the like.

According to this, the baffle plates 21 and 22 rectify the gas used in the processing chambers 101 and 102 and pass it through the exhaust spaces 17 and 18. Even in the case of the first modification, the exhaust mechanism 3 operates in cooperation with the turbo molecular pump 20. As a result, the pressure uniformity of the exhaust spaces 17 and 18 can be further enhanced, the pressure uniformity in the processing spaces of the processing chambers 101 and 102 can be improved, and the processing uniformity such as the etching rate can be achieved. Further, the baffle plates 21 and 22 block the plasma generated in the processing chambers 101 and 102, so that the exhaust mechanism 3 can be prevented from being directly exposed to the plasma.

FIG. 4B is a diagram showing a processing device 1 equipped with an exhaust device according to a modification 2 of the present embodiment. In the processing device 1 according to the second modification, the exhaust device has a baffle plate 21 in addition to the exhaust mechanism 3 and the turbo molecular pump 20. In the processing apparatus 1 according to the modification 2, there is only one processing chamber. Even in this case, depending on the arrangement of the turbo molecular pump 20, the pressure may be biased in the exhaust space 17, and the uniformity of the pressure distribution in the processing chamber 101 may be deteriorated.

Therefore, in the processing apparatus 1 according to the second modification of the present embodiment, the exhaust mechanism 3 operates in cooperation with the turbo molecular pump 20 even when there is only one processing chamber 101. As a result, the uniformity of the pressure in the exhaust space 17 can be enhanced, the uniformity of the pressure in the processing space of the processing chamber 101 can be improved, and the uniformity of the processing can be achieved.

FIG. 4C is a diagram showing a processing device 1 equipped with an exhaust device according to a modification 3 of the present embodiment. In the processing device 1 according to the modification 3, in the exhaust device, in addition to the exhaust mechanism 3 and the turbo molecular pump 20, a plurality of baffle plates 21a and 21b are parallel to each other in the vertical direction at predetermined intervals on the upstream side of the exhaust mechanism 3. Is provided. At least one of the plurality of baffle plates 21a and 21b can be moved or rotated up and down. The plurality of baffle plates 21a and 21b are each provided with a plurality of through holes. In the exhaust device according to the third modification, the APC 19 is not provided because the pressure can be controlled by using the two baffle plates 20a and 20b.

For example, the positions of the through holes of the plurality of baffle plates 21a and 21b are staggered. When at least one of the plurality of baffle plates 21a and 21b moves up and down and the plurality of baffle plates 21a and 21b approach each other, the distance between the through holes of the plurality of baffle plates becomes short and the gas flow can be suppressed. ..

Further, at least one of the plurality of baffle plates 21a and 21b rotates, and the distance between the through holes of the plurality of baffle plates 21a and 21b changes, so that the gas flow can be changed.

In the processing apparatus 1 according to the third modification of the present embodiment, the pressures in the processing space and the exhaust space can be controlled by controlling the opening and closing of the through holes provided in the plurality of baffle plates 21a and 21b. Therefore, according to the modification 3, the exhaust mechanism 3 operates in cooperation with the turbo molecular pump 20 and the plurality of baffle plates 21a and 21b. As a result, the pressure uniformity of the exhaust space 17 can be further enhanced, the pressure uniformity in the processing space of the processing chamber 101 can be improved, and the processing uniformity can be achieved.

[Exhaust treatment]
Next, an example of the exhaust method executed in the processing device 1 equipped with the exhaust device according to the present embodiment will be described with reference to FIG. FIG. 5 is a flowchart showing an example of exhaust gas treatment according to an embodiment. This process is controlled by the control unit 50.

When this process is started, the control unit 50 acquires pressure information in each process chamber using a pressure sensor provided in each process chamber (step S10). Next, the control unit 50 compares the set pressure with the acquired pressure information, and determines whether or not there is a processing chamber having a pressure higher than the set pressure (step S12).

If the control unit 50 determines that there is no processing chamber having a pressure higher than the set pressure, the control unit 50 proceeds to step S16. On the other hand, when the control unit 50 determines that there is a processing chamber having a pressure higher than the set pressure, the control unit 50 controls the rotation speed of the rotor blade 30 according to the differential pressure between the set pressure and the pressure in the processing chamber, and performs the processing. The rotation of the moving blade 30 of the chamber is increased (step S14).

Next, the control unit 50 determines whether or not there is a processing chamber having a pressure lower than the set pressure (step S16). When the control unit 50 determines that there is no processing chamber having a pressure lower than the set pressure, the control unit 50 ends this processing. On the other hand, when the control unit 50 determines that there is a processing chamber having a pressure lower than the set pressure, the control unit 50 controls the rotation speed of the rotor blade 30 according to the differential pressure between the set pressure and the pressure in the processing chamber, and performs the processing. The rotation of the rotor blade 30 of the chamber is slowed down (step S18), and this process is terminated.

The gas supply unit 16 separately supplies a predetermined flow rate of gas to the four processing chambers. On the other hand, the exhaust of gas is performed by one turbo molecular pump 20. Therefore, the pressure in each processing chamber may differ due to individual differences in the exhaust performance of the gas supply unit 16 and the turbo molecular pump 20. On the other hand, according to the exhaust method according to the present embodiment, the rotation speed of the moving blade of the exhaust mechanism 3 provided in each processing chamber can be controlled independently. This makes it possible to cancel individual differences in the exhaust performance of the processing device 1.

For example, when the gas in a certain processing chamber is exhausted to reduce the pressure, the rotation speed of the blades in the processing chamber is increased. As a result, the number of gas molecules that can be exhausted per unit time becomes larger than the number of gas molecules that can be exhausted per unit time when the APC 19 is controlled to be fully opened. As a result, the pressure in the processing chamber can be reduced faster than when the APC 19 alone is controlled.

Further, for example, when the gas in a certain processing chamber is supplied to increase the pressure, the rotation speed of the blades in the processing chamber is lowered. As a result, the number of gas molecules that can be exhausted per unit time is smaller than the number of gas molecules that can be exhausted per unit time when the APC 19 is controlled to be fully closed. As a result, the pressure in the processing chamber can be increased faster than when the APC 19 alone is controlled.

In the exhaust method according to the present embodiment, a sensor is installed in each processing chamber, and the control unit 50 acquires the pressure of each processing chamber from the sensor periodically or irregularly, and applies the acquired pressure to each processing chamber. Based on this, real-time processing that performs the above exhaust treatment is preferable.

Further, as shown in FIG. 5, the exhaust method according to the present embodiment is limited to controlling the rotation speed of the rotor blade of each processing chamber according to the difference between the set pressure and the pressure of each processing chamber obtained from the sensor. do not have. For example, in the exhaust method according to the present embodiment, the rotation speed of the rotor blade of each processing chamber may be controlled according to the difference in pressure of each processing chamber output from the sensor. This also makes it possible to speed up or slow down the exhaust and supply of gas, and it is possible to cancel individual differences in the exhaust performance of the processing device 1.

Further, the rotation speed of the rotor blades of each processing chamber may be controlled based on predetermined conditions. The predetermined conditions are not limited to the pressure information of each processing chamber acquired from the sensor, but may be at least one of process conditions such as gas flow rate and gas supply / exhaust timing.

For example, in a process in which the etching process of the wafer W is a multi-step process, when different gases are used in the previous and next steps, it is necessary to switch the gas in the processing chamber. In this case, after the gas used in the previous step is exhausted, the gas used in the subsequent step is supplied to the processing chamber. At this time, in the present embodiment, while the gas used in the previous step is exhausted, the rotation speed of the blades in each processing chamber is increased and the pressure in each processing chamber is decreased. Then, during the process of the subsequent step, the rotation speed of the rotor blades of each processing chamber is controlled to be lower than the rotation speed when the gas is exhausted in the previous step. As a result, according to the exhaust method according to the present embodiment, the pressure in each processing chamber can be controlled more efficiently by controlling the rotation speed of the moving blades in each processing chamber than when only the control of the APC 19 is performed. ..

When the exhaust method is executed in the processing device 1 according to the present embodiment and the modified examples 1 and 2, the processing device 1 may or may not have the APC 19.

[Wafer transfer during loading and unloading]
Next, the transfer of the wafer W at the time of loading and unloading of the batch type processing apparatus 1 according to the present embodiment will be described with reference to FIGS. 6 to 9. 6 to 9 are views showing an example of wafer transfer at the time of loading and unloading of the processing device 1 according to the present embodiment.

The processing apparatus 1 of FIGS. 6 to 9 has the same configuration as the processing apparatus 1 shown in FIG. In FIGS. 6 to 9, the gas supply unit, the gas shower head, the feeding rod, the high frequency power supply, the turbo molecular pump, and the like are not shown. Further, in the processing apparatus 1 of FIGS. 6 to 9, a wafer W loading / unloading port 35 is formed on a wall 29 that isolates a plurality of processing chambers. In the processing room 101, the wafer W is carried in and out by the carry-in / out port 28, and in the processing room 102, the wafer W is carried in / out through the carry-in / out port 28 and further through the carry-in / out port 35.

Further, in FIGS. 6 to 9, the shield member 40 and the shield member 41 are provided on the wall surface of the processing container 10 at positions corresponding to the carry-in outlets 28 and 35 of at least a plurality of processing chambers 101 and 102. The shield member 40 and the shield member 41 protect the cylindrical wall 29 of the processing container 10. An elevating mechanism using an electromagnet or the like (not shown) is connected to the shield member 40 and the shield member 41. As a result, the shield member 40 and the shield member 41 can move up or down when the wafer W is carried in and out, and the carry-in outlets 28 and 35 can be opened and closed.

Specifically, when the wafer W shown in FIG. 6A is carried in and out, the shield member 40 and the shield member 41 move below the carry-in outlets 28 and 35 and open the carry-in outlets 28 and 35. During the wafer W processing (during the process) shown in FIG. 6B, the shield member 40 and the shield member 41 move up to the positions of the carry-in outlets 28 and 35, and close the carry-in outlets 28 and 35.

With this configuration, according to the processing device 1 according to the present embodiment, the carry-in outlets 28 and 35 are opened and closed by the shield member 40 and the shield member 41, and the shutter is eliminated to prevent the processing bias in each processing chamber caused by the shutter. Can be eliminated. Further, by eliminating the shutter, the shutter itself, the actuator for driving the shutter, and other parts can be eliminated, and the number of parts can be reduced.

By blocking the carry-in outlets 28 and 35 with the shield member 40 and the shield member 41, the side of the processing container having the plurality of processing chambers 101 and 102 according to the present embodiment without completely sealing the carry-in outlets 28 and 35. Directional conductance can be lowered. In particular, in the present embodiment, since the moving blades 30, 32 and the stationary blades 31, 33 are provided in the exhaust space, the pressure in the processing container 10 can be controlled. As a result, the pressure distribution in the processing container 10 can be made uniform even if the carry-in outlets 28 and 35 are not completely sealed.

As shown in FIG. 7, the shield member 40 and the shield member 41 may be moved up and down so as to protrude from the ceiling portion of the processing container 10 to open and close the carry-in outlets 28 and 35. Further, the shield member 40 and the shield member 41 may be rotated to open and close the carry-in outlets 28 and 35. In this case, a rotation mechanism (not shown) such as a bearing is connected to the shield member 40 and the shield member 41. When the shield member 40 and the shield member 41 are rotated, for example, when the wafer W shown in FIG. 7A is carried in and out, the shield member 40 and the shield member 41 rotate to the position of the ceiling portion of the processing container 10. Open the carry-in outlets 28 and 35. During the wafer W processing shown in FIG. 7B, the shield member 40 and the shield member 41 move to the positions of the carry-in outlets 28 and 35, and close the carry-in outlets 28 and 35.

As shown in FIGS. 8 and 9, the shield member 40, the shield member 41, and the baffle plates 21 and 22 may be moved or rotated together to open and close the carry-in outlets 28 and 35. According to such a configuration, the number of parts can be further reduced by moving or rotating the shield member 40, the shield member 41, and the baffle plates 21 and 22 together. In addition, it is possible to eliminate the processing bias in each processing chamber caused by the shutter.

Further, as shown in FIGS. 6 to 9, when the shield member 40 and the shield member 41 are driven, a space that directly connects the processing space and the exhaust space can be formed. This makes it easier to exhaust and shortens the gas exhaust time.

Further, the shield member 40 and the shield member 41 may be provided with a horizontal portion instead of the baffle plate, and a hole may be formed at at least an appropriate position of the horizontal portion or the vertical portion. In this case, by driving the shield member 40 and the shield member 41 together with the portion having a hole inside from the side wall of the processing container 10, the shield member 40 and the shield member 41 also serve as the baffle plates 21 and 22. Can be made to. This makes it possible to further reduce the number of parts. Further, by creating the shapes of the shield member 40 and the shield member 41 so that the volume of the processing space during the process is reduced by the movement of the shield member 40 and the shield member 41, the force (high frequency power) required for the process processing is created. , Heater power, etc.) can be reduced and running costs can be reduced.

When loading and unloading the wafer W, the mounting tables 12 and 13 move up and down to the position of the loading and unloading outlet 28, grip the wafer W using a lift pin, transfer the wafer W to and from the transport arm, and carry out the loading and unloading outlet. It may be carried in and out from 28.

Although the treatment device and the exhaust method have been described above by the above-described embodiment, the treatment device and the exhaust method according to the present invention are not limited to the above-described embodiment, and various modifications and improvements can be made within the scope of the present invention. Is. The matters described in the above-mentioned plurality of embodiments can be combined within a consistent range.

The substrate processing apparatus according to the present invention can be applied to any type of Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma (HWP). ..

1 Processing device 3 Exhaust mechanism 10 Processing container 12, 13 Mounting stand 14, 15 High frequency power supply 16 Gas supply unit 17, 18 Exhaust space 19 APC
20 Turbo molecular pump 21, 22 Baffle plate 23, 24 Gas shower head 26, 27 Feed rod 28 Carry-in outlet 29 Wall 30, 32 Blade 30a First blade 30b First base material 31, 33 Static wing 31a Second Blade 31b Second base material 40, 41 Shield member 50 Control unit 101, 102 Processing chamber

Claims (13)

Multiple plasma processing vessels, each with a substrate support inside,
The moving blades and stationary blades arranged around the substrate support of each of the plurality of plasma processing containers, and
A control unit that controls the rotational speed of the rotor blades,
An exhaust space arranged below the plurality of plasma processing containers and connected to each of the plurality of plasma processing containers.
A plasma processing device. The plasma processing apparatus according to claim 1, wherein the blades of each of the plurality of plasma processing containers are independently rotated and controlled. The plasma processing apparatus according to claim 1, wherein the plurality of blades constituting the moving blade and the plurality of blades constituting the stationary blade are inclined and arranged alternately with each other. The plasma processing apparatus according to claim 2, wherein the plurality of blades constituting the moving blade and the plurality of blades constituting the stationary blade are inclined and arranged alternately with each other. The plasma processing apparatus according to claim 3, wherein an exhaust pump is arranged in the exhaust space. The plasma processing apparatus according to claim 4, wherein an exhaust pump is arranged in the exhaust space. The plasma processing apparatus according to claim 1, wherein at least one baffle plate for partitioning the exhaust space and the plasma processing space is provided inside at least one plasma processing container of the plurality of plasma processing containers. The plasma processing apparatus according to claim 5, wherein at least one baffle plate for partitioning the exhaust space and the plasma processing space is provided inside at least one plasma processing container of the plurality of plasma processing containers. The plasma processing apparatus according to claim 6, wherein at least one baffle plate for partitioning the exhaust space and the plasma processing space is provided inside at least one plasma processing container of the plurality of plasma processing containers. The plasma processing apparatus according to claim 7, wherein the at least one baffle plate moves or rotates in the vertical direction. The plasma processing apparatus according to claim 8, wherein the at least one baffle plate moves or rotates in the vertical direction. The plasma processing apparatus according to claim 9, wherein the at least one baffle plate moves or rotates in the vertical direction. The first plasma processing container and
A second plasma processing container adjacent to the first plasma processing container,
A first substrate support arranged in the first plasma processing container, and
A second substrate support arranged in the second plasma processing container, and
A first movable member and a first stationary member arranged around the first substrate support, the first movable member has a plurality of first moving blades, and the first movable blade is provided. The stationary member has a plurality of first stationary blades, and the plurality of first moving blades and the plurality of first stationary blades are alternately arranged along the vertical direction, and the first movable member. And the first movable member and the first stationary member, in which the first exhaust space is formed below the first stationary member,
A second movable member and a second stationary member arranged around the second substrate support, the second movable member having a plurality of second moving blades, and the second movable blade. The stationary member) has a plurality of second blades, and the plurality of second blades and the plurality of second blades are alternately arranged along the vertical direction, and the second movable blade is movable. A second movable member and a second stationary member, in which a second exhaust space is formed below the member and the second stationary member,
At least one drive unit configured to rotate the first movable member and the second movable member simultaneously or separately.
A control unit that controls at least one drive unit,
A common exhaust pump that communicates with the first exhaust space and the second exhaust space,
A plasma processing device.

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