JP2021502674A5 - - Google Patents

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JP2021502674A5
JP2021502674A5 JP2020525870A JP2020525870A JP2021502674A5 JP 2021502674 A5 JP2021502674 A5 JP 2021502674A5 JP 2020525870 A JP2020525870 A JP 2020525870A JP 2020525870 A JP2020525870 A JP 2020525870A JP 2021502674 A5 JP2021502674 A5 JP 2021502674A5
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Japan
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grid system
substrate support
axis
grid
portions
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JP2020525870A
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English (en)
Japanese (ja)
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JP7254791B2 (ja
JP2021502674A (ja
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Priority claimed from US15/809,957 external-priority patent/US20190148109A1/en
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Priority to JP2023052500A priority Critical patent/JP7535617B2/ja
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JP2020525870A 2017-11-10 2018-11-02 異方性パターンエッチングおよび処理のための方法および装置 Active JP7254791B2 (ja)

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Application Number Priority Date Filing Date Title
JP2023052500A JP7535617B2 (ja) 2017-11-10 2023-03-29 異方性パターンエッチングおよび処理のための方法および装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/809,957 2017-11-10
US15/809,957 US20190148109A1 (en) 2017-11-10 2017-11-10 Method and Apparatus for Anisotropic Pattern Etching and Treatment
PCT/US2018/059084 WO2019094304A1 (en) 2017-11-10 2018-11-02 Method and apparatus for anisotropic pattern etching and treatment

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JP2023052500A Division JP7535617B2 (ja) 2017-11-10 2023-03-29 異方性パターンエッチングおよび処理のための方法および装置

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JP2021502674A JP2021502674A (ja) 2021-01-28
JP2021502674A5 true JP2021502674A5 (enExample) 2022-01-06
JP7254791B2 JP7254791B2 (ja) 2023-04-10

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JP2020525870A Active JP7254791B2 (ja) 2017-11-10 2018-11-02 異方性パターンエッチングおよび処理のための方法および装置
JP2023052500A Active JP7535617B2 (ja) 2017-11-10 2023-03-29 異方性パターンエッチングおよび処理のための方法および装置

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US (2) US20190148109A1 (enExample)
JP (2) JP7254791B2 (enExample)
KR (1) KR102623685B1 (enExample)
CN (1) CN111566793A (enExample)
WO (1) WO2019094304A1 (enExample)

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US11487058B2 (en) * 2020-08-13 2022-11-01 Applied Materials, Inc. Method for manufacturing optical device structures
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US20230031722A1 (en) * 2021-07-23 2023-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Voltage Control for Etching Systems
WO2023205288A1 (en) * 2022-04-20 2023-10-26 Applied Materials, Inc. Method for roughness reduction in manufacturing optical device structures
US20230343557A1 (en) * 2022-04-23 2023-10-26 Plasma-Therm Nes Llc Virtual shutter in ion beam system
CN115410893A (zh) * 2022-09-28 2022-11-29 北京金派尔电子技术开发有限公司 干法刻蚀装置和方法
US12406833B2 (en) * 2023-06-12 2025-09-02 Applied Materials, Inc. Ion extraction optics having non uniform grid assembly

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