JP2021190985A - バルク音響共振器及びその製造方法 - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
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- Engineering & Computer Science (AREA)
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
(式1)漏れ電流特性<20
(式2)漏れ電流特性=漏れ電流の密度(μA/cm2)×スカンジウム(Sc)の含有量(wt%)
(式1)漏れ電流特性<20
(式2)漏れ電流特性=漏れ電流の密度(μA/cm2)×スカンジウム(Sc)の含有量(wt%)
ここで、漏れ電流の密度(Leakage current density)は圧電層の漏れ電流の密度を意味し、スカンジウム(Sc)の含有量は圧電層に含有されるスカンジウム(Sc)の含有量である。また、上記した漏れ電流特性は、5G通信でフィルタとして利用可能なバルク音響共振器の性能を規定する要素である。
110 基板
120 共振部
121 第1電極
123 圧電層
125 第2電極
140 犠牲層
150 膜層
160 保護層
170 挿入層
Claims (16)
- 基板と、
前記基板上に第1電極、圧電層、及び第2電極が順に積層される共振部と、
を含み、
前記圧電層は、スカンジウム(Sc)を含有する窒化アルミニウム(AlN)で形成され、
前記圧電層の漏れ電流に関連し、下記式1及び式2、
(式1)漏れ電流特性<20
(式2)漏れ電流特性=漏れ電流の密度(μA/cm2)×スカンジウム(Sc)の含有量(wt%)
を満たす、バルク音響共振器。 - 前記圧電層は10wt%〜40wt%のスカンジウム(Sc)を含有する、請求項1に記載のバルク音響共振器。
- 前記圧電層の漏れ電流の密度は2μA/cm2以下である、請求項1または2に記載のバルク音響共振器。
- 前記圧電層の破壊電圧(breakdown voltage)と前記圧電層の厚さの比(V/Å)は0.025以上である、請求項1から3のいずれか一項に記載のバルク音響共振器。
- 前記共振部内に部分的に配置され、前記圧電層の下部に配置される挿入層をさらに含み、
前記圧電層及び前記第2電極は前記挿入層によって少なくとも一部が隆起する、請求項1から4のいずれか一項に記載のバルク音響共振器。 - 前記共振部は中心領域に配置される中央部、及び前記中央部の周囲に沿って配置される拡張部を含み、
前記挿入層は前記共振部のうち前記拡張部にのみ配置され、
前記挿入層は前記中央部から離れるほど厚さが厚くなる傾斜面を備え、
前記圧電層は前記傾斜面上に配置される傾斜部を含む、請求項5に記載のバルク音響共振器。 - 前記共振部を横切るように切断した断面において、前記第2電極の先端は、前記中央部と前記拡張部との境界、又は前記傾斜部上に配置される、請求項6に記載のバルク音響共振器。
- 前記圧電層は前記中央部内に配置される圧電部、及び前記傾斜部の外側に延長される延長部を含み、
前記第2電極は少なくとも一部が前記圧電層の前記延長部上に配置される、請求項6または7に記載のバルク音響共振器。 - 基板上に第1電極、圧電層、及び第2電極を順に積層して共振部を形成する段階を含み、
前記圧電層を形成する段階は、AlScN薄膜を形成した後、前記AlScN薄膜にRTA(Rapid Thermal Annealing)工程を行う段階を含み、
前記圧電層の漏れ電流に関連し、下記式1及び式2、
(式1)漏れ電流特性<20
(式2)漏れ電流特性=漏れ電流の密度(μA/cm2)×スカンジウム(Sc)の含有量(wt%)
を満たす、バルク音響共振器の製造方法。 - 前記圧電層は10wt%〜40wt%のスカンジウム(Sc)を含有する、請求項9に記載のバルク音響共振器の製造方法。
- 前記AlScN薄膜を形成する段階は、アルミニウム−スカンジウム(AlSc)ターゲットにするスパッタリング(Sputtering)工程を介して行われる、請求項9または10に記載のバルク音響共振器の製造方法。
- 前記圧電層の漏れ電流の密度は2μA/cm2以下である、請求項9から11のいずれか一項に記載のバルク音響共振器の製造方法。
- 前記圧電層の破壊電圧(breakdown voltage)と前記圧電層の厚さの比(V/Å)は0.025以上である、請求項9から12のいずれか一項に記載のバルク音響共振器の製造方法。
- 前記圧電層の下部に配置される挿入層を形成する段階をさらに含み、
前記圧電層及び前記第2電極は前記挿入層によって少なくとも一部が隆起する、請求項9から13のいずれか一項に記載のバルク音響共振器の製造方法。 - 前記挿入層は傾斜面を備え、
前記共振部を横切るように切断した断面において、前記第2電極の先端は、少なくとも一部が前記挿入層と重なるように配置される、請求項14に記載のバルク音響共振器の製造方法。 - 前記共振部は中心領域に配置される中央部、及び前記中央部の周囲に沿って配置される拡張部を含み、
前記第2電極の先端は前記拡張部に配置される、請求項15に記載のバルク音響共振器の製造方法。
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KR1020200106353A KR102551248B1 (ko) | 2020-05-25 | 2020-08-24 | 체적 음향 공진기 및 그 제조 방법 |
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JP (1) | JP2021190985A (ja) |
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CN114726336A (zh) * | 2022-06-09 | 2022-07-08 | 深圳新声半导体有限公司 | 一种薄膜体声波谐振器及制备方法 |
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TW202145607A (zh) | 2021-12-01 |
TWI793478B (zh) | 2023-02-21 |
US20210367582A1 (en) | 2021-11-25 |
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