JP2021157012A - Integrated optical device and integrated optical module - Google Patents

Abstract

To provide an integrated optical device and an integrated optical module which have high reliability.SOLUTION: An integrated optical device includes a subcarrier 20, and an LD 30 provided on a top face 21 of the subcarrier 20. An emission surface 31 from which light is emitted from the LD 30 and a side face 22 opposite to a PLC in the subcarrier 20 are arranged substantially on the same plane. In an integrated optical module, the integrated optical device is stored in a package, and is fixed into the package through either a second metal layer or a second resin layer.SELECTED DRAWING: Figure 4

Description

The present invention relates to an integrated optical device and an integrated optical module.

With the increase in data traffic, optical communication systems and various optical devices around us using optical communication systems are becoming more multifunctional. Recently, there is a demand for high density as well as multi-functionality, and multi-functional and compact optical devices are being studied.

In recent years, silicon photonics technology for integrating a light emitting element and a light receiving element in a silicon waveguide has been advanced and used in an optical communication system. A planar lightwave circuit (PLC) that performs optical signal processing such as conjugation, demultiplexing, and wavelength selection is one of the typical silicon waveguides used in optical communication systems.

For example, in wearable devices and small projectors around us other than optical communication systems, there is a demand for multifunctional and small optical devices that exhibit a plurality of functions according to the purpose of use and enable the entire device to be carried around. ..

Conventionally, for example, a mirror and a lens have been used to integrate a plurality of optical elements. Patent Document 1 discloses an optical module in which a laser diode (LD), an optical lens, a wavelength filter for total reflection, a filter for wavelength separation, a fiber collimator, and a photodiode are integrated in a common housing. Has been done. In the optical module disclosed in Patent Document 1, light having a wavelength of 1.3 μm emitted from the LD passes through a condenser lens, a capillary, and a collimator lens, and is totally reflected by a wavelength filter for total reflection and a filter for wavelength separation. Received light with a fiber collimator. The light having wavelengths of 1.49 μm and 1.55 μm input from the fiber collimator passes through the wavelength separation filter and then is separated from each other by a wavelength separation filter different from the above. The light of 1.55 μm after being separated is totally reflected by the wavelength filter for total reflection, and is incident on the photodiode by the coupling lens. The 1.49 μm light after separation is incident on a photodiode different from the above by the coupling lens.

Patent Document 2 discloses an optical transmission / reception module in which a substrate on which an optical element is mounted, a lens array, and a wavelength duplexer are arranged at desired relative positions in a package. A wavelength combiner / demultiplexer is a device in which a wavelength selection filter and a mirror are mounted on the front surface and the back surface of a transparent substrate. In the optical transmission / reception module disclosed in Patent Document 2, a plurality of lights having predetermined wavelengths different from each other are incident according to the arrangement of the wavelength selection filter and the mirror, and are combined by a wavelength combiner / demultiplexer.

As an integrated structure different from the free space type integrated structure using a mirror or a lens as in Patent Documents 1 and 2, for example, Patent Documents 3 and 4 disclose an optical device having a waveguide structure. .. In the combiner disclosed in Patent Document 3, fiber strands having arbitrary N thin claddings are fixed to a chip-type substrate, and the exit ends of the plurality of fiber strands are bundled with each other. Patent Document 4 discloses an optical module in which a semiconductor chip and a PLC chip are integrated and integrated. The semiconductor chip has a semiconductor waveguide and is mounted on the first substrate.

In the optical module disclosed in Patent Document 4, the end face of the semiconductor chip facing the PLC chip and the end face of the PLC chip facing the semiconductor chip are separated from each other with a gap. The semiconductor chip and the PLC chip are bonded by an ultraviolet curable adhesive.

Japanese Unexamined Patent Publication No. 2005-309370 JP-A-2009-105106 Japanese Unexamined Patent Publication No. 2016-118750 Japanese Unexamined Patent Publication No. 2011-102819

However, the number of parts of the optical device disclosed in the above-mentioned Patent Documents 1 and 2 is large, the size of each part is large, and the optical device is composed of a free space optical system using a mirror and a lens. Considering the size of each component and the configuration of the free space optical system, there is a limit to the miniaturization of the optical device disclosed in Patent Documents 1 and 2. As disclosed in Patent Documents 3 and 4, in an integrated optical device using a waveguide, parts are adhered to each other by an ultraviolet curable resin, and it is easy to reduce the size as compared with a free space optical system. However, the technique described in Patent Document 4 described above proposes a structure in which the semiconductor chip is mounted on the subcarrier but protrudes from the subcarrier, and in such a design, the semiconductor chip and the sub are mounted. The bond with the carrier becomes weak.

In an integrated optical device using a waveguide, it is necessary to conduct conduction to a substrate in order to operate an optical semiconductor element such as an integrated optical element or LD. When conducting conduction to the substrate, the optical semiconductor element and the power supply are connected on the substrate by using a method such as wire bonding. If the optical semiconductor element is not sufficiently fixed, the optical semiconductor element may slip off during wire bonding, and the reliability of the integrated optical device may decrease.

The present invention has been made in view of the above circumstances, and provides a highly reliable integrated optical device and integrated optical module.

The integrated optical device according to the present invention includes a base, an optical semiconductor element provided on the surface of the base, and an optical waveguide arranged so that light emitted from the optical semiconductor element can be incident . An exit surface from which the light is emitted from the optical semiconductor element and a side surface of the base facing the optical waveguide are arranged on substantially the same surface.

In the integrated optical device according to the present invention, the base and the optical semiconductor element may be connected via a first metal layer.

In the integrated optical device according to the present invention, the base and the optical semiconductor element may be connected via a first resin layer.

In the integrated optical device according to the present invention, a gap space is formed between the exit surface and the incident surface on which the light is incident in the optical waveguide, and the light is emitted from the exit surface and propagates in the gap space. , May be configured to be incident on the incident surface.

In the integrated optical device according to the present invention, a resin is provided between the exit surface and the incident surface on which the light is incident in the optical waveguide, and the light is emitted from the exit surface and propagates through the resin. It may be configured to be incident on the incident surface.

In the integrated optical module according to the present invention, the above-mentioned integrated optical device is housed in a package. The integrated optical device is fixed in the package via either a second metal layer or a second resin layer.

According to the present invention, it is possible to provide an integrated optical device and an integrated optical module with high reliability.

FIG. 1 is a perspective view of an integrated optical device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the line AA'of the integrated optical device shown in FIG. FIG. 3 is a cross-sectional view of the incident surface of the PLC of the integrated optical device shown in FIG. FIG. 4 is an enlarged view of the position of the cross-sectional view of FIG. FIG. 5 is a plan view of a part of the integrated optical device shown in FIG. FIG. 6 is a plan view of an integrated optical module including the integrated optical device shown in FIG. FIG. 7 is a side view of the integrated optical module shown in FIG. FIG. 8 is a plan view of the integrated optical module shown in FIG. 6 with the cover removed. FIG. 9 is a cross-sectional view taken along the line CC'of a part of the integrated optical module shown in FIG. FIG. 10 is a side view of the integrated optical module shown in FIG. 6 as viewed along the direction in which light is emitted. FIG. 11 is a perspective view showing a usage example of the integrated optical module shown in FIG. FIG. 12 is a side view for explaining a method of manufacturing the integrated optical device shown in FIG. FIG. 13 is a side view for explaining a method of manufacturing the integrated optical device shown in FIG. FIG. 14 is a plan view for explaining a method of manufacturing the integrated optical device shown in FIG. FIG. 15 is a graph for explaining the manufacturing method of the integrated optical device shown in FIG. 1, and is a graph showing the relationship between the separation distance between the optical semiconductor element and the optical waveguide and the optical utilization efficiency. FIG. 16 is a plan view for explaining a method of manufacturing the integrated optical device shown in FIG. FIG. 17 is a partial cross-sectional view of a modified example of the integrated optical device shown in FIG. FIG. 18 is a partial cross-sectional view of a modified example of the integrated optical device shown in FIG.

Hereinafter, preferred embodiments of the integrated optical device and the integrated optical module of the present invention will be described with reference to the drawings.

As shown in FIG. 1, the integrated optical device 10 of the present embodiment includes a subcarrier (base) 20, an LD (optical semiconductor element) 30, and a PLC (optical waveguide) 50.

The integrated optical device 10 is, for example, a combiner that combines light of each of the three primary colors of light, red (R), green (G), and blue (B). The integrated optical device 10 can be applied as, for example, a combiner mounted on a head-mounted display. In the present embodiment, various commercially available laser elements such as red light, green light, and blue light can be used for the LD (optical semiconductor element) 30 of the three primary colors of light shown as an example. The type of LD30 and the like may be appropriately selected according to the desired application. Further, for example, light having a peak wavelength of 610 nm or more and 750 nm or less can be used for red light, light having a peak wavelength of 500 nm or more and 560 nm or less can be used for green light, and blue light can be used. , Light having a peak wavelength of 435 nm or more and 480 nm or less can be used. The color of the light emitted from the LD30, which is the light source used, is not limited to red (R), green (G), and blue (B), and may be another color.

The integrated optical device 10 includes an LD30-1 that emits red light, an LD30-2 that emits green light, and an LD30-3 that emits blue light. The LD30-1, 30-2, and 30-3 are arranged so as to be spaced apart from each other in the x direction. In the following, the reference numerals Z of any component of the integrated optical device 10 will be collectively referred to as reference numeral Z with respect to the contents common to the components of reference numerals Z-1, Z-2, ..., ZK. In some cases. The above-mentioned K is a natural number of 2 or more. The y direction is the emission direction of the light emitted from the LD 30, that is, the direction along the optical axis. The x direction is a direction substantially orthogonal to the y direction. The z direction is orthogonal to the x direction and the y direction and is a direction from the subcarrier 20 toward the LD30.
Needless to say, in the integrated optical device 10, light other than red (R), green (G), and blue (B) shown in the present embodiment can also be used, and red (R) described with reference to the drawings can be used. ), Green (G), and blue (B) are not required to be in this order and can be changed as appropriate.

The integrated optical device 10 includes the same number of subcarriers 20 as the plurality of LD30s, and includes three subcarriers 20-1, 20-2, and 20-3. The LD30 is mounted on the subcarrier 20 with a bare chip. LD30-1 is provided on the upper surface (surface) 21-1 of the subcarrier 20-1. The LD30-2 is provided on the upper surface (surface) 21-2 of the subcarrier 20-2. The LD30-3 is provided on the upper surface (surface) 21-3 of the subcarrier 20-3.

The subcarrier 20 is made of, for example, aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ), silicon (Si), or the like. As shown in FIG. 2, a first metal layer 91 is provided between the subcarrier 20 and the LD30. That is, the LD 30 is connected to the subcarrier 20 via the first metal layer 91. The first metal layer 91 has a metal layer 75 in contact with the upper surface 21 of the subcarrier 20, and a metal layer 76 in contact with the upper surface of the metal layer 75 and the lower surface 33 of the LD30. In the integrated optical device 10, the subcarrier 20-1 and the LD30-1 are connected to each other in the z direction via a first metal layer 91-1 having a metal layer 75-1 and a metal layer 76-1. In the z direction, the subcarriers 20-2 and LD30-2 are connected via a first metal layer 91-2 having a metal layer 75-2 and a metal layer 76-2. In the z direction, the subcarriers 20-3 and LD30-3 are connected via a first metal layer 91-3 having a metal layer 75-3 and a metal layer 76-3.

The method of forming the metal layers 75 and 76 constituting the first metal layer 91 is not specified. The metal layers 75 and 76 are formed between the subcarrier 20 and the LD30 in the z direction by a known method, and can be formed by a known method such as sputtering, vapor deposition, or coating of a pasted metal. The metal layer 75 is, for example, an alloy of gold (Au) and tin (Sn), an alloy of tin (Sn) and copper (Cu), an alloy of indium (In) and bismuth (Bi), and tin (Sn)-. It is composed of any alloy selected from the group consisting of silver (Ag) -copper (Cu) -based solder alloys (SAC). The metal layer 76 is composed of one or more metals selected from the group consisting of, for example, gold (Au), platinum (Pt), silver (Ag), lead (Pb), indium (In) and nickel (Ni). ing.

The PLC 50 is manufactured by a known semiconductor process on the upper surface 41 of the substrate 40 so as to be integrated with the substrate 40. The substrate 40 is made of silicon (Si). The semiconductor process described above includes photolithography and dry etching used in forming fine structures such as integrated circuits.

An antireflection film 81 is provided on the rear side, that is, the front side surface 42 in the y direction of the substrate 40, and the rear side, that is, the front side surface side in the y direction of the PLC 50 including the incident surface 61 of the core 51. An antireflection film 82 is provided on the front side, that is, the back side surface of the substrate 40 in the y direction, and the front side, that is, the back side side surface of the PLC 50 including the exit surface 64 of the core 51 in the y direction. The antireflection film 81 may be provided only on the rear side surface of the PLC 50 in the y direction. Similarly, the antireflection film 82 may be provided only on the front side surface of the PLC 50 in the y direction. In FIG. 1, the third metal layer 93 and the antireflection films 81 and 82 are omitted.

The antireflection films 81 and 82 prevent the incident light or the emitted light from the PLC 50 from being reflected from the incident surface 61 or the exit surface 64 in the direction opposite to the direction in which they enter each surface, and transmit the incident light or the emitted light. It is a film for increasing the rate. The antireflection films 81 and 82 are multilayer films in which, for example, a plurality of types of dielectrics are alternately laminated with a predetermined thickness according to the wavelengths of incident light such as red light, green light, and blue light. The above-mentioned dielectrics are, for example, titanium oxide (TiO ₂ ), tantalum oxide (Ta ₂ O ₅ ), silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ) and the like.

As shown in FIG. 3, the PLC 50 has the same number of cores 51-1, 51-2, 51-3 as the LD30-1, 30-2, 30-3, and the cores 51-1 in the direction intersecting the y direction. A clad 52 that surrounds 51-2 and 51-3 is provided. The size of each of the cores 51-1, 51-2, and 53-1 in the x direction and the size in the z direction are appropriately set in consideration of the wavelengths of red light, green light, and blue light. The size of the clad 52 in the z direction is not particularly limited, and is appropriately set in consideration of the respective sizes of the cores 51-1, 51-2, and 53-1, and is, for example, about 50 μm.

The cores 51-1, 51-2, 53-1 and the clad 52 are mainly composed of quartz. The refractive index of each of the cores 51-1, 51-2, and 53-1 is higher than the refractive index of the clad 52 by a predetermined value. Impurities are added to the cores 51-1, 51-2, and 53-1 in an amount corresponding to the above-mentioned predetermined values. The impurities are, for example, germanium (Ge) and the like.

As shown in FIG. 4, the subcarrier 20 is connected to the substrate 40 via the third metal layer 93 and the antireflection film 81. The third metal layer 93 has metal layers 71, 72, 73. The metal layer 71 is in contact with the side surface 22 of the subcarrier 20 facing the substrate 40. The metal layer 72 is in contact with the side surface 42 of the substrate 40 facing the subcarrier 20 via the antireflection film 81. The metal layer 73 is provided between the metal layers 71 and 72 in the y direction. The melting point of the metal layer 73 is preferably lower than the melting point of the metal layer 75.

The metal layer 71 is provided on substantially the entire surface of the side surface 22 so as not to come into contact with the metal layer 75. When viewed along the y direction, the metal layers 72 and 73 are formed larger than the subcarrier 20. The front end of each of the metal layers 72 and 73 in the z direction, that is, the upper end of each of the metal layers 72 and 73 is located at substantially the same position as the front end of the metal layer 71 in the z direction, that is, the upper end of the metal layer 71. The rear end, that is, the lower end of the metal layer 72 in the z direction is located behind the rear end of the metal layer 71 in the z direction, that is, the lower end of the metal layer 71 in the z direction. The rear end, that is, the lower end of the metal layer 73 in the z direction is located behind the rear end of the metal layer 72 in the z direction in the z direction. The rear end of the metal layer 73 in the z direction is located in front of the rear end of the antireflection film 81 in the z direction, that is, the lower end of the antireflection film 81 in the z direction.

The area of the metal layer 71, that is, the in-plane size of the metal layer 71 including the x-direction and the z-direction is the area of the metal layers 72 and 73 and the in-plane size of the metal layers 72 and 73 including the x-direction and the z-direction. It is preferably substantially the same as or smaller than the area of the metal layers 72 and 73. In the above configuration, the connection strength of the subcarrier 20 to the substrate 40 is secured to the maximum.

The metal layer 71 is provided in a state of being in contact with the side surface 22 by sputtering, vapor deposition, or the like, and is, for example, gold (Au), platinum (Pt), silver (Ag), lead (Pb), indium (In), nickel (Ni). ), Titanium (Ti) and tantalum (Ta). The metal layer 71 is composed of any metal selected from the group consisting of gold (Au), platinum (Pt), silver (Ag), lead (Pb), indium (In) and nickel (Ni). Is preferable.

The metal layer 72 is provided in contact with the side surface 42 by sputtering, vapor deposition, or the like, and is composed of one or a plurality of metals selected from the group consisting of, for example, titanium (Ti), tantalum (Ta), and tungsten (W). Has been done. The metal layer 72 is preferably composed of tantalum (Ta).

The metal layer 73 is composed of one or more alloys selected from the group consisting of, for example, AuSn, SnCu, InBi, SnAgCu, SnPdAg, SnBiIn and PbBiIn. The metal layer 73 is preferably composed of any alloy selected from the group consisting of AuSn, SnAgCu and SnBiIn.

By connecting the subcarrier 20 and the substrate 40 via the third metal layer 93 and the antireflection film 81 as described above, red light (light), green light (light), and green light (light) are formed on the exit surface 31 of the LD 30 and the PLC 50. A gap space 101 is formed between the core 51 and the incident surface 61 on which blue light (light) is incident. The exit surface 31-1 of the LD30-1 faces the entrance surface 61-1 of the core 51-1. Although not shown, the exit surface 31-2 of the LD30-2 faces the entrance surface 61-2 of the core 51-2. The exit surface 31-3 of the LD30-3 faces the entrance surface 61-3 of the core 51-3.

The PLC 50 is arranged so that the light emitted from the exit surface 31 of the LD 30 can be incident on the core 51. The axis JX-1 of the core 51-1 substantially overlaps with the optical axis AXR of the red light LR emitted from the exit surface 31-1 of the LD30-1. Although not shown, the axis JX-2 of the core 51-2 overlaps with the optical axis AXG of the green light LG emitted from the exit surface 31-2 of the LD30-2. The axis JX-3 of the core 51-3 overlaps with the optical axis AXB of the blue light LB emitted from the exit surface 31-3 of the LD30-3.

The distance between the exit surface 31 of the LD30 and the incident surface 61 of the core 51 of the PLC50 in the y direction is appropriately set so that the light emitted from the exit surface 31 of the LD30 is incident on the core 51 with a predetermined amount of light as described above. It is set, for example, about 0 to 5 μm. For example, in the integrated optical device 10 used for a head-mounted display, the distance between the exit surface 31 of the LD30 and the incident surface 61 of the core 51 of the PLC50 in the y direction is larger than 0 μm and 5 μm or less.

In the y direction, the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 facing the PLC 50 in the y direction are arranged on substantially the same surface. That is, in the y direction, the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are at substantially the same position and form substantially the same surface with each other. By "substantially the same", it means that the deviation between the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 in the y direction is optically negligible. For example, the above-mentioned deviation is 0 μm or more and 10 μm or less, preferably 0 μm or more and 5 μm or less, more preferably 0 μm or more and 2 μm or less, and particularly preferably 0 μm. When the exit surface 31 of the LD 30 is displaced forward in the y direction beyond 20 μm from the side surface 22 of the subcarrier 20, the LD30 protrudes in a direction closer to the PLC 50 than the subcarrier 20, and the bonding strength between the LD30 and the subcarrier 20 is increased. The decrease becomes remarkable, and the size of the third metal layer 93 in the y direction must be excessively secured, the bonding strength between the subcarrier 20 and the substrate 40 decreases, and the reliability of the integrated optical device 10 becomes low. It may decrease. When the exit surface 31 of the LD 30 is displaced rearward in the y direction beyond 10 μm from the side surface 22 of the subcarrier 20, the light emitted from the LD30 hits the corners of the front end in the y direction and the front end in the z direction of the subcarrier 20. There is a risk that the amount of light incident on the PLC 50 will decrease, or unnecessary scattered light will be generated, and the reliability of the integrated optical device 10 will decrease.

As shown in FIG. 5, the cores 51-1, 51-2, and 51-3 are gathered together in the y direction behind the position in the y direction reaching the exit surface 64 of the PLC 50. The cores 51-1, 51-2, and 53-1 approach each other in sequence toward the front in the y direction and join one core 54-1. The cores 51-1, 51-2, and 53-1 each have a radius of curvature equal to or greater than a predetermined radius of curvature so that light leakage from the cores 51-1, 51-2, and 53-1 does not occur. It is preferable to be connected to.

The red light, green light, and blue light emitted from the LD30-1, 30-2, and 30-3 enter the cores 51-1, 51-2, and 53-1, respectively, and then propagate in each core. The red light and green light propagating through the cores 51-1 and 51-2 meet at the merging position 57-1 and propagate in the core 51-7 where the cores 51-1 and 51-2 merge. The red light, green light, and blue light propagating through the cores 51-3 and 51-7 meet at the merging position 57-2, and the cores 51-3 and 51-7 merge with each other and enter the core 51-4. The merging position 57-2 is ahead of the merging position 57-1 in the y direction. The three-color light, which is a combination of red light, green light, and blue light at the merging position 57-2, propagates in the core 51-4 and reaches the exit surface 64. The three-color light emitted from the exit surface 64 is used, for example, as signal light or the like depending on the purpose of use of the integrated optical device 10.

As shown in FIGS. 6 and 7, the integrated optical module 100 of this embodiment is a module in which the above-mentioned integrated optical device 10 is housed in a package 110. The integrated optical module 100 includes an integrated optical device 10 and a package 110. The package 110 includes a main body 102 having a cavity structure and a cover 105 that covers the main body 102.

The main body 102 has a box-shaped accommodating portion 107 in which the integrated optical device 10 is accommodated, and an electrode portion 108 adjacent to the accommodating portion 107. The main body 102 is made of, for example, ceramic or the like. An opening is formed on the upper surface of the accommodating portion 107. A metal film 112 such as Kovar is formed on the upper surface of the accommodating portion 107 at the periphery of the opening when viewed from above. The cover 105 covers the opening formed on the upper surface of the accommodating portion 107 without a gap through the metal film 112. When the accommodating portion 107 is hermetically sealed with the cover 105, an inert gas such as _{nitrogen (N 2) is sealed in the internal space of the accommodating portion 107.} That is, the accommodating portion 107 is hermetically sealed by the cover 105. The internal space of the accommodating portion 107 is filled with an inert gas.

The electrode portion 108 is arranged behind the accommodating portion 107 in the y direction, that is, on the front side in the y direction. The front surface of the electrode portion 108 in the z direction, that is, the upper surface is located on the front surface of the accommodating portion 107 in the z direction, that is, behind or below the upper surface in the z direction. The bottom surface of the electrode portion 108 is located at substantially the same height as the bottom surface of the accommodating portion 107. A plurality of external electrode pads 210 are provided on the upper surface of the electrode portion 108 at intervals in the x direction.

As shown in FIGS. 8 and 9, a base 180 for installing the integrated optical device 10 is provided at a predetermined position of the bottom wall portion 131 of the accommodating portion 107. That is, the integrated optical device 10 is arranged in the internal space of the accommodating portion 107.

As shown in FIG. 8, a plurality of internal electrode pads are spaced apart from each other in the x direction at positions between the base 180 below the subcarrier 20 and the external electrode pads 210 on the upper surface of the bottom wall portion 131 in the y direction. 202 is provided.

Each of the internal electrode pads 202-1, 202-2, and 202-3 is connected to external electrode pads 210 that are different from each other. As described above, the external electrode pad 210 electrically connected to each of the internal electrode pads 202-1202-2 and 202-3 is electrically connected to a power source or the like (not shown). That is, in the integrated optical module 100, the LD30 and the power supply (not shown) are connected by a wire 95, internal electrode pads 202-1, 202-2, 202-3, and an external electrode pad 210. By supplying power to the external electrode pads 210 corresponding to the internal electrode pads 202-1, 202-2, and 202-3 from a power source (not shown), the LD30-1, 30-2, and 30-3 are red. Light, green light, and blue light are emitted.

As shown in FIG. 9, the integrated optical device 10 is fixed to the base 180 of the package 110 via the second metal layer 92. The second metal layer 92 has metal layers 171, 172, and 173. In FIG. 9, the metal layers 71, 72, and 73 of the third metal layer 93 of the integrated optical device 10 are collectively shown as the third metal layer 93. The metal layers 171, 172, and 173 are formed on the base 180 in the order of 172, 173, and 171. The metals, alloys, etc. constituting each of the metal layers 171, 172, and 173 may be the same as the metals, alloys, etc. constituting each of the metal layers 71, 72, 73, and the metal layers 71, 72, 73 may be the same. It may be selected from each of the groups described in.

Of the side wall 132 of the accommodating portion 107, an opening 133 is formed in the side wall 132 facing the exit surface 31 of the PLC 50 of the integrated optical device 10. The opening 133 is formed around a position intersecting the optical axis of the three-color light emitted from the core 51-4 of the PLC 50 on the side wall portion 132. The opening 133 is formed to be larger than the size on the surface of the side wall portion 132 of the three-color light that is emitted from the core 51-4 and spreads in the internal space of the accommodating portion 107. As shown in FIGS. 10 and 11, the opening 133 is covered by the glass plate 220 from the outside of the side wall portion 132 without any gap. That is, the accommodating portion 107 is hermetically sealed by a glass plate 220 in addition to the cover 105. Antireflection films (not shown) are provided on both surface of the glass plate 220. The opening 133 is a window through which the three-color light emitted from the cores 51-4 of the PLC 50 passes and is emitted to the outside of the package 110.

The three-color light LL emitted from the core 51-4 of the PLC50 of the integrated optical device 10 passes through the opening 133 and the glass plate 220 while diffusing around the y direction to the outside of the package 110. It is emitted and travels to the back side in the y direction, that is, to the front in the y direction. For example, the collimating device 300 provided with the collimating lens 310 can be arranged in front of, that is, behind the side wall portion 132-1 of the package 110 in the y direction. By matching the distance between the exit surface 31 and the collimating lens 310 in the y direction to the focal length of the collimating lens 310 and aligning the center of the collimating lens 310 on the optical axis of the three-color light LL, the core 51 of the PLC 50 of the integrated optical device 10 The three-color light LL emitted from -4 is collimated to become parallel light. Although the collimating device 300 is arranged outside the package 110 in FIG. 11, the collimating lens 310 may be housed inside the package 110. If the glass plate 220 can hermetically seal the opening 133, the collimating lens 310 may be formed in the region through which the three-color light emitted from the PLC 50 passes through the glass plate 220.

Next, a method of manufacturing the integrated optical device 10 will be briefly described.

First, the bare chip LD30 is mounted on the upper surface 21 of the subcarrier 20 by a known method. For example, after forming the metal layer 75 on the upper surface 21 of the subcarrier 20 by sputtering or vapor deposition, the metal layer 76 is sputtered or vapor-deposited on the lower surface 33 of the LD30 (for example, the lower surface 33-1 of the LD30-1). Form using. A metal layer may be formed on the upper surface 21 of the subcarrier 20 by sputtering, vapor deposition, or the like, and then a metal layer 75 may be formed on the metal layer by sputtering, vapor deposition, or the like.

Next, as shown in FIG. 12, for example, the subcarrier 20 is irradiated with laser light from the laser 90. Irradiation with laser light heats only the subcarrier 20 to the extent that it does not melt and deform, and heat transfer from the subcarrier 20 softens or melts the metal layers 75 and 76 to form the first metal layer 91, which is then cooled. do. By these operations, the LD30 is joined to the upper surface 21 of the subcarrier 20 via the metal layers 75 and 76. After that, a metal layer 71 is formed on the side surface 22 of the subcarrier 20 by sputtering, vapor deposition, or the like.

The PLC 50 is formed on the upper surface 41 of the substrate 40 by a known semiconductor process. Subsequently, antireflection films 81 and 82 and antireflection films (not shown) are formed on the entrance surface 61 and the exit surface 64. Then, the metal layers 72 and 73 are formed behind the antireflection film 81 in the y direction in this order by sputtering, vapor deposition, or the like.

Next, the exit surfaces 31-1, 31-2, 31-3 of the LD30-1, 30-2, 30-3 and the incident surfaces 61-1 of the cores 51-1, 51-2, 53-1 corresponding to each other , 61-2, 61-3 are overlapped with each other in the x-direction and the z-direction, and face each other with a predetermined interval in the y-direction. The optical axis of each color light emitted from the LD 30 and the axis of the incident surface 61 of the corresponding core are substantially overlapped.

Next, as shown in FIG. 13, the subcarrier 20 is irradiated with laser light from the laser 90, and the metal layers 71, 72, and 73 are softened or melted by heat transfer from the subcarrier 20, and the third metal layer 93 is formed. The subcarrier 20 on which the LD30 is mounted is joined to the substrate 40 on which the PLC50 is formed while adjusting the relative positions of the LD30 and the PLC50.

At the time of joining the LD 30 and the subcarrier 20 described above, lasers 90 are arranged on both sides of the subcarrier 20 in the x direction as shown in FIG. The light emitted from the laser 90 is applied to the subcarrier 20 along the direction indicated by the arrow in FIG. 14 to heat the subcarrier 20, and only the subcarrier 20 is heated to such an extent that it is not melted or deformed. At the same time, each color light is emitted from the LD30 to detect the emission intensity, and the emission intensity of the three color lights emitted from the cores 51-4 of the PLC 50 is detected.

As shown in FIG. 15, when the distance S between the exit surface 31 and the incident surface 61 in the y direction is changed by a value on the order of microns and the emission intensity with respect to the emission intensity is set to the light utilization efficiency [%], the interval S becomes large. The more the light utilization efficiency decreases. In FIG. 15, S _a <S _b <S _c <S _d <S _e <S _f <S _g . The optimum interval S varies depending on the intended use of the integrated optical device 10, the light emission pattern of the LD30, and the sizes of the cores 51-1, 51-2, and 53-1 in the x-direction and the z-direction. In consideration of these conditions, the positions and orientations of the intervals S and LD30 are adjusted so as to satisfy the required light utilization efficiency. The adjustment of the position and posture of the LD30 described above means that so-called active alignment and gap control are performed. The above-mentioned adjustment of the interval S and LD30 can be performed using a known device having an active alignment function.

When active alignment, gap control, and heating of the subcarrier 20 are performed, as shown in FIG. 14, the metal layers 71, 72, and 73 between the exit surface 31 and the entrance surface 61 of the LD30 arranged at the optimum positions are formed. Due to the alloying of the metal layer 73 and slight heat shrinkage, the metal layer 73 becomes thinner than each metal layer not sandwiched between the exit surface 31 of the LD30 and the incident surface 61 of the core 51. It is cooled by stopping the heating of the subcarrier 20 by the laser 90, and the position of the LD 30 is fixed. By proceeding with the above procedure, the integrated optical device 10 can be manufactured.

The integrated optical device 10 according to the present embodiment described above includes a subcarrier 20, an LD30 provided on the upper surface 21 of the subcarrier 20, and a PLC50 arranged so that light emitted from the LD30 can be incident. .. The exit surface 31 from which light is emitted from the LD 30 and the side surface 22 of the subcarrier 20 facing the PLC 50 are arranged on substantially the same surface.

According to the above configuration, since the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are at substantially the same position in the y direction, the LD 30 does not protrude forward from the subcarrier 20 in the y direction. It is possible to prevent a decrease in the bonding strength of the LD30 to the subcarrier 20. Since the exit surface 31 of the LD30 and the side surface 22 of the subcarrier 20 are substantially at the same position in the y direction, the size of the third metal layer 93 in the y direction is set to the size of the exit surface 31 of the LD30 and the PLC50 corresponding to the LD30. The distance between the core 51 and the incident surface 61 in the y direction can be substantially the same. As a result, as shown in FIG. 13, the metal layers 71, 72, and 73 are softened or melted by heat transfer from the subcarrier 20, and the subcarrier 20 is attached to the substrate 40 while adjusting the relative positions of the LD 30 and the PLC 50. In the work of joining the PLCs, it is possible to easily and highly accurately control the distance between the core 51 of the PLC 50 and the incident surface 61 in the y direction (that is, gap control). Since the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are at substantially the same position in the y direction, the light emitted from the exit surface 31 hits the subcarrier 20 and the efficiency of binding the light to the core 51 of the PLC 50 is reduced. Can be prevented. Therefore, a highly reliable integrated optical device 10 can be provided.

In the integrated optical device 10, the subcarrier 20 and the LD30 are connected to each other via a first metal layer 91 having metal layers 75 and 76. As a result, in the manufacture of the integrated optical device 10, the metal layers 75 and 76 are melted or softened to bond the LD30 and the subcarrier 20, and then the metal layers 71, 72 and 73 are melted or softened to melt or soften the subcarrier 20. It is possible to prevent the metal layer 75 from being remelted and causing a relative misalignment between the LD 30 and the subcarrier 20 when the substrate 40 and the substrate 40 are joined. By preventing the relative misalignment between the LD 30 and the sub carrier 20, the positional accuracy between the LD 30 and the PLC 50 connected via the sub carrier 20 can be improved, and a highly reliable integrated optical device 10 can be provided.

The bonding between the subcarrier 20 and the LD30 by the metal layers 75 and 76 by alloying is resistant to heat, and is difficult to be released even if the ambient temperature rises in a process such as wire bonding as shown in FIG. 16, for example. For example, when the LD 30 and the power supply (not shown) are connected by the wire 95 on the upper surface 21 of the sub carrier 20 by using a method such as wire bonding, the state in which the sub carrier 20 and the LD 30 are well bonded is maintained. Will be done. That is, at the time of wire bonding, the LD 30 and the sub carrier 20 are not separated from each other, and the LD 30 is maintained at the optimum position of the sub carrier 20. As a result, the integrated optical device 10 can exhibit desired light utilization efficiency and optical characteristics, and the reliability of the integrated optical device 10 can be enhanced.

In the integrated optical device 10, a gap space 101 is formed between the exit surface 31 of the LD 30 and the incident surface 61 on which each color light is incident on the PLC 50. The integrated optical device 10 is configured such that each color light emitted from the exit surface 31 of the LD 30 propagates in the gap space 101 along the y direction and is incident on the incident surface 61 of the core 51 of the PLC 50. With the above configuration, it is easy to make each color light emitted from the exit surface 31 of the LD 30 incident on the core 51 of the PLC 50 in a state of satisfying a predetermined coupling efficiency, and it is possible to provide a highly reliable integrated optical device 10. ..

In the integrated optical module 100 according to the present embodiment, the integrated optical device 10 described above is housed in the package 110. Therefore, the gas filled in the package 110 also occupies the gap space 101 with the same gas. The gas is not particularly limited, but air or an inert gas such as nitrogen can be used as the gas.
As described above, in the integrated optical module 100, the integrated optical device 10 is fixed inside the package 110 via the second metal layer 92. Since the integrated optical module 100 includes the integrated optical device 10 and the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are at substantially the same position in the y direction, reliability can be improved. According to the integrated optical module 100, it is possible to obtain three-color light of a desired amount of light suitable for the purpose of use with high reliability.

Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the specific embodiments, and various aspects of the present invention are described within the scope of the claims. It can be changed.

For example, as shown in FIG. 17, in the integrated optical device 10, the subcarrier 20 and the LD30 may be connected via the first resin layer 99. The first resin layer 99 is made of, for example, an ultraviolet curable resin or a thermosetting resin. When an ultraviolet curable resin is used as the first resin layer 99, when the LD30 is bonded to the upper surface 21 of the subcarrier 20 in the manufacturing process of the integrated optical device 10, the metal layers 75 and 76 are formed in the configuration shown in FIG. The laser 90 may be replaced with an ultraviolet irradiation device instead of the ultraviolet curable resin. In the integrated optical device of the above-described modification, since the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are arranged on substantially the same surface, the same effect as that of the integrated optical device 10 can be obtained.

As shown in FIG. 18, in the integrated optical device 10, resin 98 or an arbitrary material other than resin may be provided between the exit surface 31 of the LD 30 and the incident surface 61 of the core 51 of the PLC 50. However, the resin 98 and the above-mentioned optional material can transmit the light emitted from the LD 20. In order to increase the efficiency of binding light to the core 51 of the PLC 50, the higher the total light transmittance with respect to the light emitted from the resin 98 and the LD20 of the above-mentioned arbitrary material, the more preferably, for example, 80% or more. When the resin 98 is provided between the exit surface 31 of the LD30 and the incident surface 61 of the core 51 of the PLC50, each color light is emitted from the exit surface 31 of the LD30, is incident on the resin 98, and propagates through the resin 98. It is incident on the core 51 of the PLC 50 from the incident surface 61. The antireflection film 81 can be omitted by appropriately setting the refractive index of the resin 98 and the above-mentioned arbitrary material. In the integrated optical device of the above-described modification, since the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are arranged on substantially the same surface, the same effect as that of the integrated optical device 10 can be obtained.

For example, in a part of the configuration of the integrated optical module 100 shown in FIG. 9, although not shown, the integrated optical device 10 is a base inside the package 110 via a second resin layer instead of the second metal layer 92. It may be fixed to 180. The second metal layer 92 is made of, for example, an ultraviolet curable resin containing an acrylic resin or an epoxy resin, a thermosetting resin, or the like. By fixing with resin, it is difficult to locally heat as when fixing with metal, but it is possible to fix at a lower temperature than fixing with metal, and it is possible to fix with the integrated optical device 10 by heat. The impact can be reduced. In the integrated optical device of the above-described modification, since the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are arranged on substantially the same surface, the same effect as that of the integrated optical device 10 can be obtained.

For example, in the integrated optical device 10, the first metal layer 91 may be composed of one metal layer or three or more different metal layers. By providing a new metal layer between the subcarrier 20 and the metal layer 75, the reliability of the integrated optical device 10 can be improved as compared with the case where the new metal layer is not provided. The new metal layer is composed of one or more metals selected from the group consisting of, for example, titanium (Ti), tantalum (Ta) and tungsten (W).

For example, in the integrated optical device 10, the subcarrier 20 and the LD30 may be connected via a metal composite layer (not shown) including an alloy layer with at least the metal layers 75 and 76. The "metal composite layer including at least the alloy layer with the metal layers 75 and 76 of the first metal layer 91" is a layer having an alloy layer with the metal layers 75 and 76 as a part of the metal composite layer. Or, it means a layer in which the entire metal composite layer is composed of the alloy layer. For example, in the integrated optical device 10, the metals of the metal layers 75 and 76 may be alloyed over a part or the whole in the z direction to form an alloy layer. When the metal of the metal layers 75 and 76 is alloyed in a part in the z direction, the alloy layer of the metal layers 75 and 76 and any of the metal layers 75 and 76 or Both sides intervene. The composition of the intervening metal layer and the alloy layer may change depending on the heating conditions of the subcarrier 20 and the like at the time of carrying out the manufacturing method of the integrated optical device 10 described above. When the metals of the metal layers 75 and 76 are alloyed over the entire z direction, substantially only the alloy layer may be interposed between the subcarrier 20 and the LD. That is, the "metal layer" broadly includes a layer made of one kind of metal, a layer containing a plurality of metals, and an alloy layer in which a plurality of metals are alloyed.

For example, in the integrated optical device 10, at the interface between the metal layers 75 and 76 of the first metal layer 91, the metal layers 75 and 76 are alloyed over the entire y direction of the metal layer 76, and the metal layers 75 and 76 are combined with the metal layers 75 and 76. It is preferable that an alloy layer of However, the metal layers 75 and 76 may be alloyed at a part of the metal layer 76 in the y direction to form the alloy layer.

For example, in the integrated optical device 10, the subcarrier 20 and the substrate 40 are other metal composite layers (not shown) including at least an alloy layer with the metal layers 71 and 73 and / or an alloy layer with the metal layers 72 and 73. It may be connected via. The "other metal composite layer including at least an alloy layer with the metal layers 71 and 73 and / or an alloy layer with the metal layers 72 and 73" is a part of the metal of the metal layer 71 and the metal layer 73. It has an alloy layer and / or an alloy layer with the metal layers 72 and 73, or all of them are an alloy layer between the metal of the metal layer 71 and the metal layer 73, and the metal and the metal layer of the metal layer 72. It means a layer composed of an alloy layer with 73. For example, in the integrated optical device 10, the metal of the metal layer 71 and the metal of the metal layer 73 may be alloyed over a part or the whole in the y direction to form one alloy layer. The metal of the metal layer 72 and the metal of the metal layer 73 may be alloyed over a part or the whole in the y direction to form one alloy layer. The subcarrier 20 and the substrate 40 may be connected via either or both of the alloy layer with the metal layers 71 and 73 and the alloy layer with the metal layers 72 and 73.

The melting point of the metal composite layer including the alloy layers of the metal layers 75 and 76 of the first metal layer 91 is higher than the melting point of the alloy layer of the metal layers 71 and 73 and the melting point of the other metal composite layer including the alloy layers of the metal layers 72 and 73. Is also preferable. For example, the melting point of the alloy forming the alloy layer of the metal forming the metal layer 75 and the metal forming the metal layer 76 constitutes an alloy layer of the metal forming the metal layer 71 and the metal forming the metal layer 73. It is preferably higher than the melting point of the alloy. The melting point of the alloy forming the alloy layer of the metal forming the metal layer 75 of the first metal layer 91 and the metal forming the metal layer 76 is the melting point of the metal forming the metal layer 72 and the metal forming the metal layer 73. It is preferably higher than the melting point of the alloy constituting the alloy layer. In each of the above configurations, when the metal layers 71, 72, 73 are melted or softened to join the subcarrier 20 and the substrate 40 in the manufacturing process of the integrated optical device 10, the alloy layers of the metal layers 75, 76 are formed. It is possible to prevent remelting from causing a relative misalignment between the LD 30 and the subcarrier 20. The metal composite layer may be a single alloy layer, a combination of a metal layer and an alloy layer, a combination of alloy layers having different compositions from each other, or a multilayer structure different from the above-mentioned combination and including at least an alloy layer. ..

By considering the melting point conditions of the first metal layer 91 and the metal layers 71, 72, and 73 as described above, the position accuracy of the LD30 and the PLC50 connected via the subcarrier 20 is high and the reliability is high. A high integrated optical device 10 can be provided. The melting point of the alloy layer formed at or near the interface of each metal layer depends on the melting point of the metal layer 75 or the metal layer 73. For example, by forming the metal layer 75 thicker than the metal layer 76, or by forming the metal layer 73 thicker than the metal layers 71 and 72, the melting point of the alloy layer formed at or near the interface of each metal layer. Can be easily controlled.

The metal material interposed between the subcarrier 20 and the substrate 40 for joining the substrate 40 can be appropriately changed depending on the materials of the subcarrier 20, the substrate 40, and the metal layer 71. The thickness of the metal material of the metal layer or the alloy layer can be appropriately set according to each material of the subcarrier 20, the substrate 40, and the metal layer 71.

In the integrated optical device 10, the first metal layer 91 has two metal layers 75 and 76, but may have, for example, only one metal layer 75 or only the metal layer 76. In the integrated optical device 10, the subcarrier 20 and the substrate 40 are connected via the metal layers 71, 72, 73 and the antireflection film 81, but may be connected via only one metal layer.

In the integrated optical device 10, the side surface 22 of the subcarrier 20 and the side surface 42 of the substrate 40 are interposed in the order of the metal layer 71, the metal layer 72, the metal layer 73, and the antireflection film 81 from the rear to the front in the y direction. It is connected. However, the configuration between the side surface 22 of the subcarrier 20 and the side surface 42 of the substrate 40 is not limited to the laminated structure of the metal layers 71, 72, 73 and the antireflection film 81. The lower surface of the subcarrier 20 facing the substrate 40 and the upper surface of the substrate 40 facing the subcarrier 20 may be connected via the metal layers 71, 72, 73. In this case, the melting point of the metal layer 75 is preferably higher than the melting point of the metal layer 73. In the integrated optical device of the above-described modification, since the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are arranged on substantially the same surface, the same effect as that of the integrated optical device 10 can be obtained.

In the above-described modification, the subcarrier 20 and the substrate 40 are not shown, including at least an alloy layer of the metal of the metal layer 71 and the metal layer 73, and / or an alloy layer of the metal of the metal layer 72 and the metal layer 73. It may be connected via another metal composite layer. In this case as well, the melting point of the metal layer 75 is the same as that of the above-described modification, the melting point of the metal layer 75 is the alloy layer of the metal of the metal layer 71 and the metal layer 73 and / or the alloy layer of the metal layer 72 and the metal layer 73. It is preferably higher than the melting point of the layer.

The application of the integrated optical device 10 described above is not limited to wearable devices, small projectors, and the like. However, the wavelength of light processed by the integrated optical device according to the present invention is not limited to red, green, and blue, and is not limited to the visible wavelength region. The wavelength range of light processed by the integrated optical device according to the present invention may be from the visible wavelength range to the near-infrared wavelength range, or may be only the near-infrared wavelength range for the purpose of being used in optical communication. The number of wavelengths of light processed by the integrated optical device according to the present invention is not limited to three, and can be set to a desired number. The materials of the substrate 40, the PLC50, various metal layers, and the alloy layer can be appropriately selected according to the wavelength of light processed by the integrated optical apparatus according to the present invention.

The configuration of the integrated optical module 100 described above is not limited to the configuration described with reference to FIGS. 6 to 11. The accommodating portion 107 of the package 110 includes an imaging lens other than the collimating lens 310, a beam splitter, a wavelength filter, a multifunctional optical filter, a receiver, etc., according to the application of the integrated optical module 100 and the shape of the core 51 in the PLC 50. Optical elements can be accommodated freely. The above-mentioned optical element may be installed outside the accommodating portion 107 of the package 110 as in the collimating device 300 shown in FIG. The integrated optical module 100 may be integrally incorporated in any optical processing device.

10 Integrated optical device 20 Subcarrier (base)
20-1 Subcarrier (base)
20-2 Subcarrier (base)
20-3 Subcarrier (base)
21 Top surface 21-1 Top surface 21-2 Top surface 21-3 Top surface 22 Side surface 22-1 Side surface 22-2 Side surface 22-3 Side surface 30 LD (optical semiconductor element)
30-1 LD (optical semiconductor device)
30-2 LD (optical semiconductor device)
30-3 LD (optical semiconductor device)
31 Exit surface 31-1 Exit surface 31-2 Exit surface 31-3 Exit surface 33 Bottom surface 40 Substrate 41 Top surface (front surface)
42 Side 50 PLC (Optical Waveguide)
51 Core 51-1 Core 51-2 Core 53-1 Core 52 Clad 61 Incident surface 61-1 Incident surface 61-2 Incident surface 63-1 Incident surface 64 Exit surface 71 Metal layer 72 Metal layer 73 Metal layer 75 Metal layer 76 Metal layer 81 Antireflection film 82 Antireflection film 90 Laser 91 First metal layer 92 Second metal layer 93 Third metal layer 95 Wire 96 Second resin layer 98 Resin 99 First resin layer 100 Integrated light module 101 Gap space 102 Main body 105 Cover 107 Accommodating part 108 Electrode part 110 Package 112 Metal film 131 Bottom wall part 132 Side wall part 133 Opening 171 Metal layer 172 Metal layer 173 Metal layer 180 Base 202 Internal electrode pad 210 External electrode pad 300 Collimating device 310 Collimating lens

Claims (6)

Base and
An optical semiconductor element provided on the surface of the base and
An optical waveguide arranged so that light emitted from the optical semiconductor element can be incidentally
With
An exit surface from which the light is emitted from the optical semiconductor element and a side surface of the base facing the optical waveguide are arranged on substantially the same surface.
Integrated optics. The base and the optical semiconductor element are connected via a first metal layer.
The integrated optical device according to claim 1. The base and the optical semiconductor element are connected via a first resin layer.
The integrated optical device according to claim 1. A gap space is formed between the exit surface and the incident surface on which the light is incident in the optical waveguide.
The light is configured to be emitted from the exit surface, propagate through the gap space, and enter the core of the optical waveguide from the incident surface.
The integrated optical device according to any one of claims 1 to 3. A resin is provided between the exit surface and the incident surface on which the light is incident in the optical waveguide.
The light is configured to be emitted from the exit surface, propagate through the resin, and enter the core of the optical waveguide from the incident surface.
The integrated optical device according to any one of claims 1 to 3. The integrated optical device according to any one of claims 1 to 5 is housed in a package.
The integrated optical device is fixed in the package via either a second metal layer or a second resin layer.
Integrated optical module.

Images