JP2021144006A - Magnetoresistive element, magnetic sensor, and magnetism detector - Google Patents

Abstract

To provide a magnetoresistive element, a magnetic sensor, and a magnetism detector, which can increase output and reduce noise.SOLUTION: A magnetoresistive element 10 comprises: a magneto-sensitive unit the resistance value of which changes in accordance with a magnetic field; and a shorting electrode 4 and a connecting electrode 3 which are arranged on the magneto-sensitive unit spaced apart from each other. The connecting electrode is arranged on the shorting electrode side relative to a first line segment 21 linking a first end A and a second end B of the shorting electrode, in which an angle θ which is smaller one of angles formed between a second line segment 22 linking a center 3C of the connecting electrode and the first end and a third line segment 23 linking the center of the connecting electrode and second end satisfies 69.6°×AR+8.6°≤θ≤160°, where AR represents the ratio of the length of the first line segment to the length of a vertical to the shorting electrode from a middle point F of the first line segment.SELECTED DRAWING: Figure 4

Description

The present disclosure relates to magnetoresistive elements, magnetic sensors, and magnetic detectors.

Conventionally, a reluctance element for detecting a gear or recognizing a bill has been known. For example, Patent Document 1 discloses a constituent unit having a magnetically sensitive portion connecting electrode arranged on the magnetically sensitive portion and a short-circuit electrode separated from the magnetically sensitive portion connecting electrode.

Japanese Unexamined Patent Publication No. 2013-207195

Here, it is desired to further increase the output of the constituent unit of the magnetoresistive element disclosed in Patent Document 1 and reduce noise.

An object of the present disclosure made in view of such a point is to provide a magnetoresistive element, a magnetic sensor, and a magnetic detector capable of increasing the output and reducing the noise.

The magnetic resistance element according to the embodiment of the present disclosure includes a magnetically sensitive portion whose resistance value changes according to a magnetic field, and a short-circuit electrode and a connection electrode arranged apart from each other on the magnetically sensitive portion. The connection electrode is arranged on the side of the short-circuit electrode with respect to a first line segment connecting the first end and the second end of the short-circuit electrode, and is located at the center of the connection electrode and the first. The smaller angle θ between the second line segment connecting the ends of the magnet and the third line segment connecting the center of the connection electrode and the second end is the first line segment. When the ratio of the length of the first line segment to the length of the perpendicular line from the midpoint to the short-circuit electrode is AR, 69.6 ° × AR + 8.6 ° ≦ θ ≦ 160 ° is satisfied.

The magnetic sensor according to the embodiment of the present disclosure is a magnetic sensor including a substrate and a plurality of magnetic resistance elements connected in series on the substrate, and the magnetic resistance element resists in response to a magnetic field. It includes a magnetically sensitive portion whose value changes, and a short-circuit electrode and a connection electrode arranged apart from each other on the magnetically sensitive portion, and the connection electrode is a first end portion and a second end portion of the short-circuit electrode. A second line that is arranged on the side of the short-circuit electrode with respect to the first line connecting the ends of the magnetic field and connects the center of the connecting electrode and the first end, and the center of the connecting electrode and the center of the connecting electrode. The smaller angle θ formed by the third line connecting the second ends is the first with respect to the length of the perpendicular line from the midpoint of the first line to the short-circuit electrode. When the ratio of the lengths of the line segments is AR, 69.6 ° × AR + 8.6 ° ≦ θ ≦ 160 ° is satisfied, and the connection electrode of the magnetic resistance element of one of the plurality of magnetic resistance elements. Is electrically connected to the short-circuit electrode of another magnetic resistance element adjacent to the magnetic resistance element, and both ends of the plurality of magnetic resistance elements are connected to take-out electrodes, respectively.

The magnetic detector according to an embodiment of the present disclosure includes the above magnetic sensor and a plastic package for molding the magnetic sensor.

According to one embodiment of the present disclosure, a magnetoresistive element, a magnetic sensor, and a magnetic detector capable of increasing the output and reducing the noise can be provided.

FIG. 1 is a diagram showing a configuration example of a magnetic sensor including a magnetoresistive element according to an embodiment of the present disclosure. FIG. 2 is an enlarged view of a part of the magnetic sensor of FIG. FIG. 3 is a cross-sectional view of a part of the magnetic sensor of FIG. FIG. 4 is a diagram showing a configuration example of a magnetoresistive element according to an embodiment of the present disclosure. FIG. 5 is a diagram showing another configuration example of the magnetoresistive element according to the embodiment of the present disclosure. FIG. 6 is a diagram showing the relationship between the ratio AR and the angle θ _AR. FIG. 7 is a diagram showing the relationship between the position of the connection electrode in the x-axis direction and noise. FIG. 8 is a diagram showing the relationship between _{the angle θ AR and the angle θ.} FIG. 9 is a diagram showing the relationship between the angle θ and the SNR. FIG. 10 is a diagram showing the relationship between the position of the connection electrode in the y-axis direction and noise. FIG. 11 is a diagram showing the relationship between the size of the connection electrode and noise. FIG. 12 is a diagram showing a configuration of a magnetoresistive element of a modified example. FIG. 13 is a diagram showing a configuration of a magnetoresistive element of a modified example. FIG. 14 is a diagram showing a configuration of a magnetoresistive element of a modified example. FIG. 15 is a diagram showing a configuration of a magnetoresistive element of a modified example. FIG. 16 is a diagram showing a configuration of a magnetoresistive element of a modified example. FIG. 17 is a diagram showing a configuration of a magnetoresistive element of a modified example. FIG. 18 is a diagram showing a configuration of a magnetic resistance element of a comparative example. FIG. 19 is a diagram showing the shape of the short-circuit electrode of one modification.

FIG. 1 shows a configuration example of a magnetic sensor 100 including a magnetoresistive element 10 according to an embodiment of the present disclosure. FIG. 2 is an enlarged view of a region P which is a part of the magnetic sensor 100 of FIG. FIG. 3 is a cross-sectional view showing a cross section of a part of the magnetic sensor 100 shown in FIG. 2 in QQ. The magnetic sensor 100 includes a substrate 1 and a plurality of magnetoresistive elements 10 connected in series on the substrate 1. Further, the magnetic sensor 100 includes take-out electrodes 11, 12, 13 and 14. Further, the magnetic sensor 100 includes a conductive portion 15 for connecting two magnetic resistance elements 10 in a folded portion among a plurality of magnetic resistance elements 10 connected in series. The magnetic sensor 100 can be molded, for example, in a plastic package and used as a small magnetic detector.

The magnetoresistive element 10 includes a magnetically sensitive portion 2 whose characteristics change according to a magnetic field, and a short-circuit electrode 4 and a connection electrode 3 arranged apart from each other on the magnetically sensitive portion 2. The characteristic that changes according to the magnetic field of the magnetic sensing portion 2 is specifically a resistance value. As shown in FIG. 2, the connection electrode 3 of the reluctance element 10-1 of the plurality of reluctance elements 10 is the connection electrode 3 of the other reluctance element 10-2 adjacent to the reluctance element 10-1. It is electrically connected to the short-circuit electrode 4 by the conductive portion 5. Here, when one reluctance element 10-1 and the other reluctance element 10-2 are two reluctance elements 10 in the folded-back portion, the connection electrode 3 of one reluctance element 10-1 is , Is electrically connected to the short-circuit electrode 4 of the other magnetoresistive element 10-2 adjacent to one magnetoresistive element 10-1 by the conductive portion 5 and the conductive portion 15.

In the drawings, Cartesian coordinates are shown so that the main surface of the substrate 1 is parallel to the xy plane. The main surface of the substrate 1 is a surface on which a plurality of magnetoresistive elements 10 and take-out electrodes 11, 12, 13 and 14 are provided on the surface having the largest area of the substrate 1. The z-axis direction corresponds to the direction in which the magnetoresistive element 10 is laminated on the main surface of the substrate 1. The x-axis direction corresponds to the direction in which a plurality of magnetoresistive elements 10 that are not in the folded portion are connected in series and lined up. In xy plan view, the shape of the short-circuit electrode 4 may be axisymmetric with respect to an axis parallel to the x-axis. For example, the short-circuit electrode 4 shown in FIG. 2 has a shape in which one side of a square is cut off, and is line-symmetric with respect to an axis parallel to the x-axis.

Here, the number of the plurality of magnetic resistance elements 10 included in the magnetic sensor 100 is not limited. Considering the balance between the resistance value of the magnetic sensor 100 and the chip size, the number of the plurality of magnetic resistance elements 10 is preferably 4 or more and 1000 or less. The number of the plurality of magnetoresistive elements 10 is more preferably 20 or more and 500 or less. Further, as shown in FIG. 1, both ends of the plurality of magnetoresistive elements 10 are connected to take-out electrodes 11, 12, 13 and 14, respectively. In this embodiment, the magnetic sensor 100 has four groups of magnetoresistive elements 10 connected in series. Each group is composed of 12 magnetoresistive elements 10. The first group functions as a reluctance between the take-out electrode 11 and the take-out electrode 13. The second group functions as a reluctance between the take-out electrode 11 and the take-out electrode 14. The third group functions as a reluctance between the take-out electrode 13 and the take-out electrode 12. The fourth group functions as a magnetoresistor between the take-out electrode 14 and the take-out electrode 12. The extraction electrodes 11, 12, 13 and 14 are connected to external terminals to form a full bridge. For example, the take-out electrodes 11 and 12 may be connected to a power supply voltage and a ground voltage, respectively. Here, the number of electrodes included in the magnetic sensor 100 is not limited to four. For example, the magnetic sensor 100 may include two, three, or five or more electrodes.

As shown in FIG. 3, the magnetoresistive element 10 includes a magnetically sensitive portion 2 provided on the substrate 1. The magnetoresistive element 10 has a protective film 6 on the magnetically sensitive portion 2, and includes a short-circuit electrode 4 and a connection electrode 3 in a portion from which the protective film 6 has been removed. One reluctance element 10-1 includes a conductive portion 5 on a protective film 6 between a connection electrode 3 and a short-circuit electrode 4 of another reluctance element 10-2 adjacent to the connection electrode 3. In the present embodiment, the magnetic resistance element 10 has a unique magnetic resistance element 2, and the magnetic resistance element 2 is divided into each magnetic resistance element 10. In the configuration in which the magnetically sensitive portion 2 is divided for each magnetoresistive element 10, the resistance value can be increased because there is no magnetically sensitive portion 2 that is not involved in the magnetoresistive effect. Here, as another example, the magnetic sensing portion 2 is common to the plurality of magnetoresistive elements 10 and may be used as one continuous layer.

The magnetoresistive element 10 can be manufactured by, for example, the following manufacturing method. First, a compound semiconductor film to be a magnetically sensitive portion 2 is formed on the substrate 1. The method for forming the compound semiconductor film is preferably, but is not limited to, a vacuum vapor deposition method, a molecular beam epitaxy (MBE) method, or the like. As the substrate 1, for example, a GaAs substrate or a Si substrate can be used. The compound semiconductor film may be a film of a compound semiconductor having a sphalerite structure, or may be a film of a bulk crystal of the compound semiconductor. Specifically, the compound semiconductor film is InSb, InAs, InAs _y Sb _(1-y) (0 ≦ y ≦ 1), or In _a Al _b Ga _(1-ab) As _x Sb _(1-x) ( It can be a film of 0 ≦ a + b ≦ 1, 0 ≦ x ≦ 1). Further, the compound semiconductor film may be doped with impurities such as Si, Sn, S, Se, Te, Ge, or C. The configuration of the substrate 1 and the configuration of the compound semiconductor film are not limited to the above examples.

A mask pattern for forming the magnetically sensitive portion 2 is exposed and developed on the compound semiconductor film, and mesa etching is performed with a hydrochloric acid and hydrogen peroxide-based etching solution to form the magnetically sensitive portion 2 on the substrate 1. Will be done. Here, the method for forming the magnetically sensitive portion 2 may be a dry method, or an etching solution that is not based on hydrochloric acid or hydrogen peroxide may be used. Then, the protective film 6 may be formed on the magnetically sensitive portion 2 by, for example, a plasma CVD method. The protective film 6 is preferably an insulating inorganic material. The protective film 6 is, for example, a film of silicon nitride or silicon oxide, but is not limited thereto. The thickness of the protective film 6 may be, for example, 150 to 500 nm, but is not limited thereto.

The protective film 6 at the portion where the connection electrode 3, the short-circuit electrode 4, the take-out electrodes 11, 12, 13, 14, and the conductive portion 15 are formed is removed. Removal of the protective film 6 may be performed, for example, by reactive ion etching, other dry etching or wet etching. Then, for example, a connection electrode 3, a short-circuit electrode 4, a conductive portion 5, a take-out electrode 11, 12, 13, 14 and a conductive portion 15 (hereinafter, electrodes, etc.) are formed by a vapor deposition method, a sputtering method, or a plating method. .. The electrodes and the like are Cu, Al or Au single layers, or Ti / Au, Ni / Au, Cr / Cu, Cu / Ni / Au, Ti / Au / Ni, Cr / Au / Ni, Cr / Ni / Au /. It may be a laminate of Ni or NiCr / Au. Some of the electrodes and the like may have a structure different from the others. Further, the electrodes and the like may be formed in a plurality of times. However, from the viewpoint of manufacturing efficiency, it is preferable that the electrodes and the like have the same structure and are formed in the same process. Further, the thickness of the electrode or the like is preferably 0.1 to 1.5 μm, for example, because if it is thick, the formation time becomes long and the productivity decreases, and if it is thin, the resistance value increases. The thickness of the electrodes and the like is more preferably 0.3 to 1 μm, for example. The thickness of the electrodes and the like is more preferably 0.3 to 0.7 μm, for example.

After the formation of the electrodes and the like, a soft resin layer may be further formed so as to cover the connection electrode 3, the short-circuit electrode 4, the conductive portion 5, and the conductive portion 15. The soft resin layer may be formed by, for example, photolithography. The soft resin layer may be, for example, a silicon-based resin having a thickness of 1 to 300 μm or a rubber-based resin having a thickness of 1 to 10 μm. The soft resin layer relieves pressure and in-plane stress on the magnetically sensitive portion 2, the connecting electrode 3, and the short-circuit electrode 4.

FIG. 4 is a diagram showing a configuration example of the magnetoresistive element 10. Here, in FIG. 4, the same elements as those in FIGS. 1 to 3 are designated by the same reference numerals, and detailed description thereof will be omitted. The shape of the short-circuit electrode 4 has two ends. The first line segment 21 is a virtual line connecting the first end A and the second end B of the short-circuit electrode 4. The connection electrode 3 is arranged on the side of the short-circuit electrode 4 with respect to the first line segment 21. The angle θ is such that the second line segment 22 connecting the center 3C and the first end A of the connecting electrode 3 and the third line segment 23 connecting the center 3C and the second end B of the connecting electrode 3 It is the smaller of the angles to be formed. Here, the intersection of the perpendicular lines drawn from the midpoint F of the first line segment 21 to the short-circuit electrode 4 is referred to as a point E. Here, the ratio AR is defined as the ratio of the length of the first line segment 21 to the length of the perpendicular line drawn from the midpoint F to the short-circuit electrode 4, that is, the length of the line segment EF. That is, the ratio AR is (the length of the first line segment 21) / (the length of the line segment EF). Further, FIG. 4 shows the center of gravity G of the region surrounded by the short-circuit electrode 4 and the first line segment 21.

FIG. 5 shows another configuration example of the magnetoresistive element 10 according to the present embodiment. In FIG. 5 and FIGS. 8 and 12 to 18 described later, the same elements as those in FIGS. 1 to 4 are designated by the same reference numerals, and detailed description thereof will be omitted. The short-circuit electrode 4 in FIG. 5 has a semicircular shape and is axisymmetric with respect to an axis parallel to the x-axis. Similar to the example of FIG. 4, the first end A, the second end B, the first line segment 21, the midpoint F of the first line segment 21, the center 3C of the connection electrode 3, and the center of gravity G. , The second line segment 22, the third line segment 23, the angle θ, the point E, and the ratio AR are determined.

Hereinafter, the conditions under which noise is reduced will be examined with respect to the angle θ and the ratio AR. FIG. 6 is a diagram showing the relationship between the ratio AR and the angle θ _AR. The angle θ _AR is determined by the ratio AR. As shown in FIG. 6, the ratio AR and the angle θ _AR have a substantially linear relationship, and the coefficient of determination R ² is 0.9942. Specifically, the angle θ _AR is approximated by 69.6 ° × AR + 8.6 °.

FIG. 7 is a diagram showing the relationship between the position of the connection electrode 3 in the x-axis direction and noise. That is, the change in noise when the center 3C of the connection electrode 3 is moved from the center of gravity G toward the midpoint F of the first line segment 21, and the direction of the center 3C of the connection electrode 3 from the center of gravity G to the point E. The change in noise when moved to is shown. The horizontal axis shows the length from the point E to the center 3C of the connection electrode 3 as a ratio to the length of the line segment EF, assuming that the center 3C of the connection electrode 3 is at the center of gravity G as 50%. For example, if the center 3C of the connection electrode 3 is at the point E, the position of the connection electrode 3 is 0%. For example, if the center 3C of the connection electrode 3 is at the midpoint F, the position of the connection electrode 3 is 100%. The vertical axis shows the magnitude of noise. As shown in FIG. 7, the noise is reduced as the position of the center 3C of the connection electrode 3 moves in the direction of the midpoint F. Therefore, the center 3C of the connection electrode 3 may be located at the position of the center of gravity G, but it is preferably located on the side of the midpoint F from the center of gravity G. More preferably, the position of the connecting electrode 3 is 67% or more, and more preferably, the position of the connecting electrode 3 is 84% or more.

FIG. 8 is a diagram showing the relationship between _{the angle θ AR and the angle θ.} As shown in FIG. 8, the angle θ is set to a size _{equal to or larger than the angle θ AR.} Therefore, the connection electrode 3 is provided at the upper side near the midpoint F. Therefore, the current path flowing through the magnetically sensitive portion 2 is dominated by the path flowing through the short-circuit electrode 4 near the midpoint F, and noise is reduced regardless of the shape of the lower part of the short-circuit electrode 4.

FIG. 9 is a diagram showing the relationship between the angle θ and the SNR (Signal to Noise Ratio). FIG. 9 shows that when the ratio AR is 0.75, 0.86, 1, 1.2 and 1.5, the SNR is measured by changing the position of the connection electrode 3, that is, changing the angle θ. be. With respect to the angle θ, when θ _AR ≤ θ was satisfied, noise was reduced and a good SNR of the reference value sv or higher was obtained. Here, the reference value sv is 79 dB as an example. Further, the upper limit of the angle θ is 160 ° as an example. By limiting the angle θ to a certain size, the connection electrode 3 is formed inside the first line segment 21. In this case, since the area of the magnetoresistive element 10 can be reduced, the chip size can be reduced. Further, as a result of making it difficult for the current flowing through the magnetically sensitive portion 2 to concentrate on the first end portion A and the second end portion B of the short-circuit electrode 4, noise can be suppressed. Therefore, the magnetoresistive element 10 can obtain a good SNR when the angle θ and the ratio AR satisfy 69.6 ° × AR + 8.6 ° ≦ θ ≦ 160 °.

Hereinafter, another condition for reducing noise will be examined with respect to the position and size of the connection electrode 3. FIG. 10 is a diagram showing the relationship between the position of the connection electrode 3 in the y-axis direction and noise. As shown in FIGS. 4, 5 and 8, a line perpendicular to the fourth line segment 24, that is, a line parallel to the y-axis direction, reaches the short-circuit electrode 4 through the center 3C of the connection electrode 3. Let the points be points C and D. FIG. 10 is a measurement of noise when the center 3C of the connection electrode 3 moves on the line segment CD. The horizontal axis shows the deviation of the center 3C of the connection electrode 3 in the y-axis direction as a ratio to the length of the line segment CD, assuming that the case where the center 3C of the connection electrode 3 is on the fourth line segment 24 is 0%. There is. The deviation to the point D side is indicated by a positive value. Further, the deviation to the point C side is indicated by a negative value. The vertical axis shows the magnitude of noise. As shown in FIG. 10, noise is remarkably suppressed when the magnitude of the deviation is within 33%. In order to suppress noise, the magnitude of the deviation is preferably 33% or less in proportion to the length sandwiched between the short-circuit electrodes 4. Here, the length sandwiched between the short-circuit electrodes 4 is the length of the line segment CD. Further, the magnitude of the deviation is more preferably 20% or less in proportion to the length sandwiched between the short-circuit electrodes 4. Further, the magnitude of the deviation is more preferably within 10% of the length sandwiched between the short-circuit electrodes 4.

FIG. 11 is a diagram showing the relationship between the size W of the connection electrode 3 and noise. The size W of the connection electrode 3 is the diameter when the connection electrode 3 is circular (see FIG. 4). Further, the size W of the connection electrode 3 may be a length in which the line segment CD is separated by the boundary of the connection electrode 3 when the connection electrode 3 is polygonal or the like. FIG. 11 shows the measurement of noise when the size W of the connection electrode 3 is changed. The horizontal axis shows the size W of the connection electrode 3 as a ratio to the length of the line segment CD. The vertical axis shows the magnitude of noise. As shown in FIG. 11, when the size W of the connection electrode 3 is 10% or more of the length of the line segment CD, noise is remarkably suppressed. In order to suppress noise, the size W of the connection electrode 3 is preferably 10% or more in proportion to the length of the line segment CD. The size W of the connection electrode 3 is more preferably 20% or more in proportion to the length of the line segment CD. The size W of the connection electrode 3 is more preferably 30% or more in proportion to the length of the line segment CD.

Examples of the present disclosure will be described below. The present disclosure is not limited to the examples. For example, the short-circuit electrode 4 is not limited to the shape illustrated below, and is a polygonal line having two ends in a plan view, a curved line, or a combination thereof, and is a first line segment connecting the two ends. It may have a shape surrounding one closed area together with 21. Further, the connection electrode 3 may be provided so as to be included in this closed region in a plan view.

(Example 1)
The magnetoresistive element 10 of the first embodiment has a short-circuit electrode 4 having a shape in which one side of a square is cut off in a plan view (see FIG. 4). The connection electrode 3 is included in the region surrounded by the short-circuit electrode 4 and the first line segment 21, and is arranged on the fourth line segment 24. The angle θ is 123.9 °. Since the ratio AR is 1, the angle θ satisfies 69.6 ° × AR + 8.6 ° ≦ θ ≦ 160 °.

The magnetic sensor 100 including the magnetic resistance element 10 of Example 1 was manufactured by the following method. As the substrate 1, a semi-insulating GaAs single crystal substrate having a thickness of 0.63 mm was prepared. Using the molecular beam epitaxy method, a Sn-doped InSb thin film was formed on the substrate 1 by epitaxial growth.

The photoresist was uniformly applied to the surface of the formed InSb thin film, and exposure and development were performed. Mesa etching was performed with a hydrochloric acid and hydrogen peroxide-based etching solution to form a magnetically sensitive portion 2 made of an InSb thin film.

A silicon nitride thin film as a protective film 6 was formed on the InSb thin film as the magnetic sensitive portion 2 by a plasma CVD method. The silicon nitride thin film was formed with a thickness of 150 nm.

After the photoresist is applied again, the silicon nitride thin film in the portion where the connection electrode 3, the short-circuit electrode 4, the take-out electrode 11, 12, 13, 14 and the conductive portion 15 are formed is made of reactive ions by _{CF 4 gas.} It was removed using an etching apparatus.

The photoresist was applied and exposed and developed. A photoresist mask for forming electrodes for the connection electrode 3, the short-circuit electrode 4, the conductive portion 5, the take-out electrodes 11, 12, 13, 14, and the conductive portion 15 was formed.

Next, the connection electrode 3, the short-circuit electrode 4, the conductive portion 5, the take-out electrodes 11, 12, 13, 14 and the conductive portion 15 were formed by the lift-off method. These electrodes had a Ti / Au laminated structure, and after the first layer of Ti was formed, the second layer of Au was subsequently formed in vacuum. The thickness of each layer was Ti / Au = 100 nm / 450 nm.

Then, in order to relieve the pressure and the in-plane stress, a soft resin layer was formed using a rubber-based resin.

For the magnetic sensor 100 provided with the magnetoresistive element 10 of this embodiment, a simulation of the output voltage was executed when a magnetic field of 648 mT and 612 mT was applied and a voltage of 5 V was applied to the take-out electrodes 11 and 12. In the simulation, a high output of Vpp = 220 mV was obtained. Meanwhile, the noise is ^{2.12 × 10 -2 mV, S /} N was 80.3DB. In this simulation, the short-circuit electrode 4 had a side length of 60 μm. The size W of the connection electrode 3 was 6 μm.

(Example 2)
The magnetoresistive element 10 of the second embodiment has a short-circuit electrode 4 having a semicircular shape in a plan view (see FIG. 5). The connection electrode 3 is included in the region surrounded by the short-circuit electrode 4 and the first line segment 21, and is arranged on the fourth line segment 24. The angle θ is 130 °. Since the ratio AR is 1.5, the angle θ satisfies 69.6 ° × AR + 8.6 ° ≦ θ ≦ 160 °. The manufacturing method and the evaluation method are the same as in Example 1.

For the magnetic sensor 100 provided with the magnetoresistive element 10 of this embodiment, a simulation of the output voltage was executed when a magnetic field of 648 mT and 612 mT was applied and a voltage of 5 V was applied to the take-out electrodes 11 and 12. In the simulation, a high output was obtained as in Example 1.

(Comparative Example 1)
As shown in FIG. 18, the magnetoresistive element 110 of Comparative Example 1 has a short-circuit electrode 4 having the same shape as that of Example 1. The connection electrode 3 is included in the region surrounded by the short-circuit electrode 4 and the first line segment 21, and is arranged on a perpendicular line extending from the midpoint F of the first line segment 21 to the short-circuit electrode 4. However, the connection electrode 3 is arranged closer to the point E than the center of gravity G. The angle θ is 73.7 °. Since the ratio AR is 1, the reluctance element 110 of Comparative Example 1 does not satisfy the angle θ of 69.6 ° × AR + 8.6 ° ≦ θ ≦ 160 °. The manufacturing method and the evaluation method are the same as in Example 1.

For the magnetic sensor provided with the magnetoresistive element 110 of the comparative example, the simulation of the output voltage was executed when the magnetic fields of 648 mT and 612 mT were applied and the voltage of 5 V was applied to the take-out electrodes 11 and 12. In the simulation, but higher output than 238mV as in Example 1 were obtained, the noise is ^{3.38 × 10 -2 mV, S /} N was 77.0DB.

In the magnetic resistance element 110 of the comparative example, since the connection electrode 3 is below the center of gravity G, the current flowing from the connection electrode 3 is concentrated on the short-circuit electrode 4 on the point E side. As a result, the area of the magnetic sensing portion 2 cannot be fully utilized, the current flows through the limited area, and the magnetic sensing portion 2 is easily affected by noise caused by minute resistance fluctuations. It ends up. Therefore, in the magnetoresistive element 110 of the comparative example, the noise becomes large and the S / N becomes small.

As described above, according to the present disclosure, it is possible to provide the magnetoresistive element 10, the magnetic sensor 100, and the magnetic detector capable of increasing the output and reducing the noise by the above configuration.

(Modification example)
The short-circuit electrode 4 of the magnetoresistive element 10 is not limited to the shape of the above embodiment. The short-circuit electrode 4 may have the following shape, for example.

As shown in FIG. 12, the magnetoresistive element 10 may have a short-circuit electrode 4 having a shape obtained by cutting a part of a trapezoid in a plan view. Further, as shown in FIG. 13, the magnetoresistive element 10 may have a short-circuit electrode 4 having a shape in which a part of a circle is cut off in a plan view. As shown in FIG. 14, the magnetoresistive element 10 may have a short-circuit electrode 4 having a polygonal line shape bent toward the connection electrode 3 at the portion E at the point E in a plan view. As shown in FIG. 15, the magnetoresistive element 10 may have a short-circuit electrode 4 having a shape in which one side of an octagon is cut off in a plan view. As shown in FIG. 16, the magnetoresistive element 10 may have a short-circuit electrode 4 having a shape in which one corner is cut off in an oblique square in a plan view. As shown in FIG. 17, the magnetoresistive element 10 may have a short-circuit electrode 4 having an octagonal continuous three-sided shape in a plan view.

Further, the magnetoresistive element 10 may have a short-circuit electrode 4 having a shape surrounding a plurality of closed regions together with the first line segment 21. In other words, the magnetoresistive element 10 may have a short-circuit electrode 4 having a shape in which the first line segment 21 crosses the short-circuit electrode 4. At this time, the first end portion A or the second end portion B may be redefined so that the first line segment 21 does not cross the short-circuit electrode 4. For example, the short-circuit electrode 4 in FIG. 19 has a shape in which a first line segment 21 connecting the first end A or the second end B crosses the short-circuit electrode 4. In such a case, the first end A is moved toward the second end B along the short-circuit electrode 4, and the position A'is set as the new first end A. At this time, the short-circuit electrode 4 surrounds one closed region together with the new first line segment 21, and the fourth line segment 24 and the like can be defined in the same manner as in the above embodiment.

1 Substrate 2 Magnetically sensitive part 3 Connection electrode 3C Center of connection electrode 4 Short-circuit electrode 5 Conductive part 6 Protective film 10 Magnetic resistance element 11, 12, 13, 14 Take-out electrode 15 Conductive part 21 First line 22 Second line Minute 23 Third line 24 Fourth line 100 Magnetic sensor 110 Magnetic resistance element

Claims (8)

A magnetically sensitive part whose resistance value changes according to the magnetic field,
A short-circuit electrode and a connection electrode arranged apart from each other on the magnetically sensitive portion are provided.
The connection electrode is arranged on the side of the short-circuit electrode with respect to a first line segment connecting the first end portion and the second end portion of the short-circuit electrode.
The smaller angle between the second line segment connecting the center of the connecting electrode and the first end and the third line segment connecting the center of the connecting electrode and the second end. θ is defined as AR when the ratio of the length of the first line segment to the length of the perpendicular line from the midpoint of the first line segment to the short-circuit electrode is AR.
69.6 ° x AR + 8.6 ° ≤ θ ≤ 160 °
A magnetoresistive element that meets the requirements. The fourth of the centers of the connecting electrodes in a direction perpendicular to the fourth line segment connecting the midpoint of the first line segment with the short circuit electrode and the center of gravity of the region surrounded by the first line segment. The magnetic resistance element according to claim 1, wherein the magnitude of deviation from the line segment is within 33% of the length sandwiched between the short-circuit electrodes. Claim that the magnitude of the deviation of the center of the connecting electrode from the fourth line segment in the direction perpendicular to the fourth line segment is within 20% of the length sandwiched by the short-circuit electrode. 2. The magnetic resistance element according to 2. Claim that the magnitude of the deviation of the center of the connecting electrode from the fourth line segment in the direction perpendicular to the fourth line segment is within 10% of the length sandwiched by the short-circuit electrode. The magnetic resistance element according to 3. The magnetic resistance element according to claim 4, wherein the center of the connection electrode is arranged on the fourth line segment. The magnetic resistance element according to any one of claims 1 to 5, wherein the shape of the short-circuit electrode is line-symmetrical in a plan view. A magnetic sensor including a substrate and a plurality of magnetoresistive elements connected in series on the substrate.
The magnetoresistive element is
A magnetically sensitive part whose resistance value changes according to the magnetic field,
Short-circuit electrodes and connection electrodes arranged apart from each other on the magnetically sensitive portion,
With
The connection electrode is arranged on the side of the short-circuit electrode with respect to a first line segment connecting the first end portion and the second end portion of the short-circuit electrode.
The smaller angle between the second line segment connecting the center of the connecting electrode and the first end and the third line segment connecting the center of the connecting electrode and the second end. θ is defined as AR when the ratio of the length of the first line segment to the length of the perpendicular line from the midpoint of the first line segment to the short-circuit electrode is AR.
69.6 ° x AR + 8.6 ° ≤ θ ≤ 160 °
The filling,
The connection electrode of one of the plurality of reluctance elements is electrically connected to the short-circuit electrode of another reluctance element adjacent to the one reluctance element, and the plurality of reluctance elements. Both ends of the element are connected to the take-out electrode, respectively.
Magnetic sensor. The magnetic sensor according to claim 7 and
A plastic package for molding the magnetic sensor and
A magnetic detector equipped with.

Images