JP2021139628A - Temperature measuring device and temperature measuring method - Google Patents

Abstract

To provide a temperature measuring device having a configuration capable of also measuring a reflection distribution which is a surface texture of an observation point where radiance is measured.SOLUTION: The temperature measuring device comprises: an infrared receiving unit 0101 that measures the radiance of infrared light from an observation point of a temperature measurement target 0108; an opposite side reflecting unit 0102 that reflects infrared light from the observation point of the temperature measurement target and guides it to the infrared receiving unit; a different wavelength light incident unit 0103 that makes different wavelength light that is light with a wavelength different from infrared light incident on the same optical path as the optical path of infrared light received from the observation point by the infrared receiving unit at the observation point of the temperature measurement target; reflection distribution measuring means 0105 provided on the opposite side reflecting unit for measuring, at the opposite side reflecting unit, the reflection distribution of different wavelength light from the observation point of the temperature measurement target; and a reflection stop unit 0106 that stops reflection by the opposite side reflection unit.SELECTED DRAWING: Figure 1

Description

The present invention is a temperature measurement capable of accurately measuring the temperature by measuring the radiation brightness of infrared light from the observation point of the temperature measurement target and the reflection distribution at the observation point of the temperature measurement target. Regarding the device and the temperature measuring method.

Radiation thermometers that can measure temperature in a non-contact manner are often used in steel sheet manufacturing processes and the like. The radiation thermometer measures the intensity of thermal radiation from the object (spectral radiation brightness) and converts the intensity of thermal radiation into temperature based on the relationship between the intensity of thermal radiation of the blackbody and the temperature. Here, there is no problem when the emissivity of the temperature measurement target is close to the emissivity of the blackbody (ε = 1.0), but it is about 0.2 on the non-oxidized surface and about 0.2 on the oxidized surface like aluminum. Correction is required in the temperature measurement of substances whose emissivity is significantly smaller than the emissivity of the blackbody, such as 0.4.

In order to make an appropriate correction, it is necessary to know the actual spectral emissivity of the temperature measurement target. The spectral emissivity of the main substances is generally known, but for example, in temperature measurement for temperature control in the aluminum plate manufacturing process, the emissivity changes depending on the progress of oxidation of the aluminum plate surface during the process. There is a problem that the emissivity set in advance for correction and the emissivity of the actual temperature measurement target are different from each other, and accurate correction cannot be performed.

In order to solve such a problem, Patent Document 1 discloses the following temperature measuring method. A cavity with a high reflectance mirror surface is covered on the temperature measurement target in a non-contact manner, and the radiance of heat radiation from the temperature measurement target that is multiple reflected on the inner surface of the cavity is measured. The brightness is measured as it is without passing through the cavity. On the other hand, the roughness of the surface to be measured (average inclination angle or root mean square RMS) is measured by some other device. Then, based on the fact that the radiance in the case of multiple reflection depends on the surface texture of the measurement target, a temperature measurement method is disclosed in which the emissivity of the measurement target is calculated from each of those measured values and corrected by the calculated emissivity. ing.

JP-A-59-40250

In the invention of Document 1, it is disclosed to measure the average inclination angle, the root mean square roughness, etc. as an index of the surface texture of the measurement target, but in order to measure them, it is different from the device for measuring the radiance. Equipment is required. That is, in the invention of Document 1, there is a problem that the device for measuring the radiance and the device for measuring the surface texture must be used by replacing each other with respect to the measurement target, which is troublesome and inconvenient. .. Therefore, an object of the present invention is to provide a temperature measuring device in which a measuring system for measuring radiance and a measuring system for measuring the reflection distribution of a measurement target are integrally configured.

Therefore, in order to solve the above problems, in the present invention, an infrared light receiving unit that measures the radiation brightness of infrared light from an observation point to be measured and an infrared light from the observation point to be measured are reflected. With light of a wavelength different from that of the infrared light in the same optical path as the light path of the infrared light received from the observation point by the infrared light receiving unit and the opposite side reflecting unit leading to the infrared light receiving unit and the observation point of the temperature measurement target. Reflection distribution measurement provided in the different wavelength light incident part that incidents a certain different wavelength light and the opposite side reflection part for measuring the reflection distribution of the different wavelength light from the observation point of the temperature measurement target at the opposite side reflection part. Provided is a temperature measuring device including means and a reflection stop portion for stopping reflection by a reflection portion on the opposite side.

Further, in the above temperature measuring device, the reflection stop unit provides a temperature measuring device which is a shutter means that operates so as to be openable and closable between the opposite side reflecting unit and the observation point.

Further, in any of the above temperature measuring devices, the opposite side reflecting portion has an infrared light reflection filter which is a filter that reflects most of the infrared light and transmits light of different wavelengths, and measures the reflection distribution. The means provides a temperature measuring device configured to observe the distribution of different wavelength light transmitted through an infrared light reflecting filter.

Further, in any of the above temperature measuring devices, a temperature measuring device is provided which further has a light receiving side reflecting unit which does not interfere with the light receiving of infrared rays on the temperature measuring target side of the infrared receiving unit.

Further, in any of the above temperature measuring devices, the infrared light receiving unit provides a temperature measuring device having a polarized light receiving means for receiving polarized infrared light.

In addition, a multiple reflection step that multiple-reflects infrared light from the observation point of the temperature measurement target, a reflected infrared light radiation brightness measurement step that measures the radiation brightness of the multiple-reflected infrared light, and observation of the temperature measurement target. The non-reflective infrared light radiation brightness measurement step that measures infrared light from a point without multiple reflection, and the reflection distribution of light that is incident on the observation point in the same optical path as the infrared light whose radiation brightness is measured. Provided is a temperature measuring method including a reflection distribution measuring step to be measured.

Further, in the above temperature measuring method, the emissivity of the infrared light measured by multiple reflection, the radiance of infrared light measured without multiple reflection, and the measured reflection distribution are used to radiate the temperature to be measured. Provided is a temperature measurement method further comprising an emissivity acquisition step of acquiring a rate.

According to the present invention, the measurement of the reflection distribution at the observation point where the radiance is measured is performed almost simultaneously (for example, when the temperature measurement process is performed by the MPU of 1 MIPS, the reflection distribution and the brightness measurement are 3 to 5 respectively. Since it can be processed with a degree of instruction, one of the processes is not performed. On the other hand, the time length without processing is about 3/million to 5 seconds, and even if the moving speed of the continuously moving temperature controller is 2 meters / second, it is 0. Since it moves only about 1 mm, a sufficient accuracy can be guaranteed.) It is possible to provide a temperature measuring device that can be performed at the same time.

Conceptual diagram showing an example of the configuration of the temperature measuring device of the first embodiment The figure which shows the characteristic of a wavelength filter The figure which shows the characteristic of a low-pass filter The figure which shows the characteristic of a high-pass filter when the different wavelength light is visible light. Diagram showing the relationship between surface roughness and diffuse reflection The figure which shows the reflection distribution measuring means composed of two light receiving elements. The figure which shows the reflection distribution measuring means composed of many light receiving elements or two-dimensional array sensors. Conceptual diagram mainly depicting the reflection distribution measuring means Conceptual diagram showing the relational expression of α and γ created by plotting the values of α and γ obtained by the experiment and approximating with a linear expression. A flow chart showing an example of a temperature measuring method using the temperature measuring device of the first embodiment. Conceptual diagram showing an example of a computer that realizes a temperature measuring device and a temperature measuring method Conceptual diagram showing an example of the configuration of the temperature measuring device of the second embodiment Experimental or simulation results of polarization direction emissivity in the polarization direction of various samples ((a) Si wafer, (b) aluminum, (c) cold-rolled steel sheet, (d) stainless steel sheet) The conceptual diagram which mainly shows the infrared ray receiving part of another aspect of Embodiment 2.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The present invention should not be limited to these embodiments, and may be implemented in various embodiments without departing from the gist thereof.

The functional configurations of the respective embodiments described below can be realized as a combination of hardware and software, which will be described later. Moreover, each embodiment described in this specification can be realized not only as an apparatus but also a part or all of it as an operation method. Further, a part of such a device can be configured as software. Further, a software product used to execute such software on a computer, and a recording medium on which the product is fixed are naturally included in the technical scope of each embodiment described in the present specification (the present specification). The same is true throughout.
<Embodiment 1>
<Outline of Embodiment 1>

The temperature measuring device of the present embodiment includes a measuring system that measures the temperature from a value obtained by directly measuring the radiation brightness from the observation point and a value measured after reflecting the radiation brightness, and a measuring system that measures the reflection distribution of the observation point. , It is characterized by being integrally configured.
<Embodiment 1 Configuration>

FIG. 1 is a conceptual diagram showing an example of the temperature measuring device of the present embodiment. As shown in FIG. 1A, the temperature measuring device includes an "infrared light receiving unit" 0101, an "opposite side reflecting unit" 0102, an "different wavelength light source" 0103, and an "infrared light transmitting filter" 0104. The basic configuration is a "different wavelength light incident portion", a "reflection distribution measuring means" 0105 provided on the opposite side reflecting portion, and a "reflection stopping portion" 0106. In this figure, a "light receiving side reflection unit" 0110 and a "lens" 0107 arranged in front of the infrared light receiving unit are further shown.

Further, FIG. 1B is a view of the opposite side reflecting portion viewed in the “arrow direction” 0112 in the drawing. As shown in the figure, the "light receiving element" 0113 constituting the reflection distribution measuring means is arranged at the intersection position with the direction of the angle θ with respect to the normal direction from the observation point P of the temperature measurement target, and is centered on the light receiving element. One light receiving element is arranged on each of the top, bottom, left and right sides. With the above configuration, the temperature of the observation point P of the "temperature measurement target" 0108 is measured.

The “temperature measurement target” 0108 is, for example, an aluminum plate or a steel plate that is continuously conveyed in the rolling process. What is shown in this figure is a plate-shaped cross section of the temperature measuring object, and the temperature measuring object is configured to be conveyed in the normal direction of the paper surface.

The "infrared light receiving unit" 0102 measures the radiance of infrared light from an observation point to be measured. The infrared light receiving unit can use an infrared light receiving element such as a thermopile, and can be configured in combination with a lens for condensing or the like as shown in the figure. The wavelength of the infrared rays to be received may be appropriately selected in a region of about 0.9 μm to 15 μm according to the temperature measurement target, the temperature measurement environment, and the like.

Further, a wavelength filter that transmits infrared light in the wavelength region to be received may be arranged between the lens and the infrared light receiving element. FIG. 2 is a diagram showing the characteristics of such a wavelength filter. For example, when the sensitivity wavelength of the infrared light receiving element is 1350 nm, it is preferable to use a wavelength filter having a characteristic that the transmittance increases sharply around the sensitivity wavelength as shown in the figure.

Further, the infrared light receiving unit is arranged so as to receive infrared light radiated from the observation point in an optical path (dotted line in the figure) at an angle θ with respect to the normal direction from the observation point. In the present specification, the radiance means the spectral radiance which is the radiance at a certain wavelength unless otherwise specified. It may also be referred to as spectral radiance.

The “opposing side reflecting unit” 0102 reflects infrared light from the observation point to be measured and guides it to the infrared receiving unit. The surface of the reflecting portion on the opposite side on the temperature measurement target side has a spherical shape, and is spherical so as to reflect infrared light emitted from the observation point P at an angle θ from the observation point P to the normal line to the observation point P. Radius is designed.

Further, the opposite side reflecting unit has an "infrared light reflecting filter" 0109, which is a filter that reflects most of the infrared light from the observation point and transmits light of a different wavelength, which will be described later. When the different wavelength light is visible light, a low-pass filter, a dichroic filter, or a hot mirror that reflects most of the infrared light and transmits the visible light can be used as the infrared light reflection filter. This type of filter realizes the function of alternately stacking multiple thin film materials with different refractive indexes and utilizing the interference effect of light to reflect light in a specific wavelength region and transmit light in other wavelength regions. do. FIG. 3 is a diagram showing the characteristics of the above-mentioned low-pass filter. For example, when the sensitivity wavelength of the infrared light receiving element is 1350 nm and the wavelength of the visible light laser is 532 nm, a low-pass filter having reflectance and transmittance characteristics as shown in the figure can be used.

With this configuration, the infrared receiver not only directly receives the infrared rays radiated from the observation point P, but also the infrared rays radiated from the observation point P and reflected by the opposite side reflection unit to the observation point. Infrared rays that are incident on P and reflected at the observation point P at an angle θ with respect to the normal can also be received.

Further, from the observation point P while having a "hole" 0111 on the temperature measurement target side of the infrared light receiving unit so as not to interfere with the reception of infrared light radiated from the observation point P at an angle θ with respect to the normal direction. It is also possible to include a "light receiving side reflecting unit" 0110 that reflects the emitted infrared light and guides it to the observation point P. With this configuration, the infrared light radiated from the observation point P and multiple-reflected by the opposite side reflecting unit and the light receiving side reflecting unit is received by the infrared receiving unit.

Then, a "reflection stop portion" 0106 for stopping the reflection by the opposite side reflection portion is provided between the opposite side reflection portion and the observation point. The reflection stop unit may be, for example, a shutter means that can be opened and closed between the opposite reflection unit and the observation point, or a chopper having the same function may be used.

Then, by not stopping the reflection by the opposite side reflecting portion, the infrared light receiving portion causes the radiance of the infrared light reflected by the opposing side reflecting portion or the radiance of the infrared light multiplely reflected by the opposing side reflecting portion and the light receiving side reflecting portion. (L ₂ described later) can be measured, and by stopping the reflection by the reflecting portion on the opposite side, the infrared light radiated from the observation point P is directly received without causing the above reflection, and the radiance (L 2) is received. it is possible to measure the L ₁₎ to be described later.

The angle θ at which the infrared light receiving unit receives infrared light from the observation point P is preferably 70 ° to 80 °. The angle θ is the angle of incidence when the infrared light reflected by the opposite side reflection part is incident on the observation point P. The larger the angle of incidence, the more mirror-like reflection characteristics are exhibited, and the apparent emissivity due to multiple reflections is increased. This is because it can be made larger. If the angle θ is larger than 80 °, it may be difficult to arrange the light receiving elements in the reflection distribution measuring means described later.

The "different wavelength light incident part" is a different wavelength light having a wavelength different from that of the infrared light in the same optical path as the infrared light received from the observation point by the infrared light receiving unit at the observation point to be measured. Is incident. As a specific example, as shown in the figure, the "different wavelength light source" 0103 and the "infrared light transmission filter" 0104 can be configured.

As the "different wavelength light source" 0103, for example, a visible light laser or the like can be used, and if the infrared light has a wavelength different from that of the infrared light measured by the infrared light receiving unit, an infrared light laser having that wavelength is used. May be good. As the different wavelength light source, a laser light source or an LED light source having excellent directivity is preferable from the viewpoint of measuring the light diffusely reflected at the observation point as described later.

The "infrared light transmission filter" 0104 is provided on the same optical path as the optical path of infrared light received from the observation point P by the infrared light receiving unit, transmits the infrared light, reflects light of a different wavelength, and reflects this optical path. It is a filter that is incident on the observation point P at. When the different wavelength light is visible light, a high-pass filter having an optical thin film that transmits infrared light and reflects visible light can be used. When light other than visible light is used for different wavelength light, a dichroic filter or the like provided with an optical thin film that reflects the light to be used and transmits infrared light may be provided. FIG. 4 is a diagram showing the characteristics of the high-pass filter when the different wavelength light is visible light. For example, when the sensitivity wavelength of the infrared light receiving element is 1350 nm and the wavelength of the visible light laser is 532 nm, a high-pass filter having reflectance and transmittance characteristics as shown in the figure can be used.

The “reflection distribution measuring means” 0105 is provided on the opposite side reflecting portion, and measures the reflection distribution of different wavelength light from the observation point to be measured by the facing side reflecting portion. As shown in FIG. 1, different wavelength light transmitted through the "infrared light reflection filter" 0109 can be obtained by arranging a plurality of light receiving elements capable of measuring the intensity of the different wavelength light. In FIG. 1, a position shifted from the reference optical path by a predetermined angle with respect to an optical path in which light of a different wavelength is incident at an angle θ at the observation point P and is specularly reflected at an angle θ with respect to the normal direction. The reflection distribution can be measured by arranging one or more light receiving elements in the light beam. In FIG. 1, one light receiving element is arranged on both the plus side and the minus side with respect to the reference optical path, but the light receiving element may be arranged only on either one side.

FIG. 5 is a diagram showing the relationship between surface roughness and diffuse reflection. As shown in FIG. 5A, when the surface is rough, the reflected light is diffused from the specularly reflected light to the plus side and the minus side. Then, as shown in FIG. 5B, the rougher the surface, the more isotropic the reflection distribution. Based on the relationship between surface roughness and diffuse reflection, the reflection distribution at the observation point to be measured is measured.

Although an example of the reflection distribution measuring means is shown in FIG. 1 (b), it is also preferable to use more light receiving elements or a two-dimensional array sensor in order to appropriately measure the reflection distribution. This is because if the surface roughness of the measurement target is not isotropic and has anisotropy, the diffuse reflection also has anisotropy. FIG. 6 shows a case where the reflection distribution measuring means 0601 is configured by two light receiving elements 0602. FIG. 6A shows a case where the diffuse reflection light can be sufficiently received by the two light receiving elements, but when the diffuse reflection has anisotropy, as shown in FIG. 6B. In addition, even if the degree of diffusion is the same, the direction of diffusion is different, so that the diffuse reflected light cannot be received accurately. Will be different.

FIG. 7 is a diagram showing an example in which a reflection distribution measuring means 0701 is configured by using more light receiving elements 0702 or using a two-dimensional array sensor 0703. As shown in FIG. 7A, by arranging many light receiving elements evenly, it is possible to accurately receive light even if the direction of diffusion changes variously. Further, as shown in FIG. 7B, by using the two-dimensional array sensor, even if the direction of diffusion changes variously, it is possible to accurately receive light.

Temperature control is very important in the rolling process of metals and the process immediately before the roll winding after the rolling process. This is because temperature control affects the tensile strength, deformation resistance, and toughness of steel rolls and aluminum rolls. However, since this rolling and winding is performed while continuously flowing the raw materials, there is a non-measurement period between the measurement of the reflection distribution at the temperature measurement point (measurement of the surface state) and the measurement of the radiance as in the conventional technique. If it is provided, the temperature measurement points will move one after another, and the temperature measurement points that measure the reflection distribution and the temperature measurement points that measure the radiance will be completely different, and accurate radiation rates and temperatures will be measured. It becomes difficult to do. However, in the case of the invention of the present application, the conventional problem can be solved because the measurement of the radiance by infrared light and the measurement of the reflection distribution of the temperature measurement point can be performed almost at the same time. Therefore, it can be said that the temperature measuring device of the present application is particularly suitable for a processing process in which the temperature of the controlled object must be controlled while constantly moving. That is, as an application of the present invention, a system provided in a continuous rolling apparatus (one including a heating step) for measuring the temperature of a processing object in a rolling process to be continuously processed, and continuous winding of a metal roll are used. It can be applied to a continuous winding system provided immediately before the process. Further, as a temperature profile control system used not only for maintaining a predetermined temperature but also for temperature profile control by providing a temperature measuring device of the present invention at two or more points of a continuously moving object for cooling or heating. Can also be used.
(Measurement principle)

The temperature measuring device of the present embodiment can measure the temperature based on the following measurement principle. _{Generally speaking, the ratio of the radiance L 2} radiated from the observation point and measured by the infrared receiver through multiple reflections and the radiance L ₁ measured by the infrared receiver without undergoing multiple reflections (hereinafter referred to as the radiance ratio). The _{spectral emissivity of the object to be measured is estimated based on RL} = L ₂ / L ₁ and the reflection distribution of the observation point, and the temperature of the observation point is obtained from the estimated spectral radiance. The radiance L ₁ can be measured by making the reflection stop portion function, and the radiance L ₂ can be measured by not making the reflection stop portion function.

First, the above L ₁ and L ₂ can be expressed by the following mathematical formula 1. ε _θ is the spectral emissivity in the angle θ direction of the temperature measurement target, and ε _eff is the spectral emissivity that is apparently increased by multiple reflections. Further, L _b and _λ (T) are the spectral radiances of the ideal blackbody (emissivity ε = 1) at the temperature T.

Here, assuming that the surface of the temperature measurement target is a completely mirror-like reflection surface, theoretically, multiple reflections are permanently repeated between the opposite side reflection portion and the light receiving side reflection portion. However, in reality, the radiant flux diffuses to the outside of one of the reflecting parts each time it is reflected by the temperature measurement target. Therefore, the radiation bundle that passes through the hole at the time of reflection by the light receiving side reflecting part can be regarded as the integration of finite n round trips between the opposite side reflecting part and the light receiving side reflecting part, and the opposing side reflecting part and the light receiving side receive light. Assuming that the reflectance of the side reflector is ρ and the reflection distribution coefficient, which is a coefficient representing the reflection distribution of the temperature measurement target, is γ, L ₂ can be expressed as the following formula (2), and the values of ρ and γ. The larger the value, the larger the apparent reflectance. If the light receiving side reflection unit is not provided, n = 1, that is, the integration of one round trip is performed.

Therefore, the radiance ratio _{can be expressed as RL} , mathematical formula (3).

Then, when α = 1 / ργ-1 is set, the relationship of the mathematical formula (4) can be obtained.

In this way, it can be seen that _{the spectral emissivity ε θ in} the angle θ direction of the temperature measurement target can be obtained by obtaining the parameter α. If ε _θ is obtained, the temperature of the temperature measurement target can be calculated more accurately.
(Acquisition of reflection distribution coefficient γ)

The acquisition of the reflection distribution coefficient γ at the observation point of the temperature measurement target described above will be described. FIG. 8 is a conceptual diagram mainly depicting the reflection distribution measuring means. The acquisition of γ will be described with reference to FIG. As shown in the figure, in the reflection distribution measuring means, a light receiving element 0803 for measuring the intensity of the different wavelength light is arranged on an optical path in which the different wavelength light 0801 is incident on the observation point of the temperature measurement target 0802 and is specularly reflected at the reflection angle θ. Has been done. In addition to this, the above-mentioned light receiving element 0804 is arranged on _{the optical path having the reflection angle θ 1 and on} the optical path having the reflection angle θ _2.

Here, the received light intensity measured at reflection angle theta I _theta, a received light intensity measured at reflection angle .theta.1 and I _.theta.1, to obtain the γ by Equation 5.

（パラメータαとγとの関係式） Further, the light receiving intensity I _θ2 measured at the reflection angle θ2 may be obtained by the mathematical formula 6 instead of I _θ1.

(Relationship between parameters α and γ)

As described above, if the parameter α is known, the spectral emissivity ε _θ can be obtained by the mathematical formula 4. Further, the parameter α is given by α = 1 / ργ-1, but ρ can be considered to be constant because it is the reflectance of the opposite side reflecting portion and the light receiving side reflecting portion. Therefore, α can be calculated by obtaining the reflection distribution coefficient γ. However, although γ is a parameter indicating the degree of reflection distribution of the temperature measurement target, it cannot be uniquely determined because it is not generally defined. However, since γ (and α) depends only on the surface condition of the temperature measurement target, it is considered that the relational expression between α and γ can be described by one formula regardless of the material of the target (physical characteristics of the temperature measurement target). Does not change depending on the value). Therefore, by measuring α and γ in advance with a large number of samples of the same material but different surface conditions (reflection distribution) and experimentally determining the relationship between α and γ, the spectral radiation coefficient Even for an unknown temperature measurement target, α can be obtained by measuring only γ.

In order to construct the relational expression between γ and α, it is necessary to measure α separately from γ. The parameter α cannot be obtained directly by measurement, _{but can be obtained by experimentally obtaining the spectral emissivity ε θ} and the radiance ratio _{RL of} the sample and substituting those values into Equation 4. ..

The experiment for obtaining the relationship between the spectral emissivity ε _θ and the radiance ratio _{RL is as follows.} To measure the temperature of the sample directly, a thermocouple is welded to the central surface of the sample to measure the temperature. On the other hand, the temperature reading value of the sample is acquired by the radiation thermometer. If the spectral emissivity of the sample is lower than the ideal emissivity (1.0) of the black body, the measured value (indicated value) by the radiation thermometer without emissivity correction and the actual sample measured directly by the thermocouple There is a difference from the temperature. Based on this difference, the spectral emissivity ε _θ of the sample can be obtained.

In addition, the infrared receiver of the device, the opposing side reflecting portion (may be used in conjunction with the light-receiving-side reflecting portion) and the reflecting stop the radiance L ₁ and radiance L ₂ measured for the sample, The radiance ratio _{RL was obtained, and the spectral emissivity ε θ} and the radiance ratio _RL of the sample obtained using the thermocouple and the radiation thermometer as described above were substituted into Equation 4 to obtain the radiance ratio RL in the sample. The parameter α can be obtained.

Further, the reflection distribution coefficient γ of the sample is obtained by the different wavelength light incident portion of this apparatus and the reflection distribution measuring means. As a result, the relationship between the parameter α of the sample obtained in the above experiment and the reflection distribution coefficient γ can be obtained.

By conducting an experiment for obtaining such a parameter α and a reflection distribution coefficient γ for a large number of samples, values of α and γ for various samples having different surface states (reflection distribution) can be obtained. Then, the vertical axis is α and the horizontal axis is γ, and the obtained values are plotted and an approximate expression is created to obtain the relational expression between α and γ. For example, FIG. 9 is a conceptual diagram showing the relational expression between α and γ created by plotting the values of α and γ obtained by the experiment and approximating them with a linear expression.

The temperature measuring device of the present embodiment holds the relational expression between α and γ obtained by conducting the above experiment, and based on the measurement results of each configuration of the present embodiment, the temperature is measured as follows. The temperature can be measured.
(Temperature measurement method)

FIG. 10 is a flow chart showing an example of a temperature measuring method using the temperature measuring device of the present embodiment. First, the infrared light from the observation point to be measured is multiple-reflected (1001: multiple reflection step). Then, the radiance of the multi-reflected infrared light is measured (1002: reflected infrared light radiance measurement step). Then, the infrared light from the observation point to be measured is measured without being multiple-reflected (1003: non-reflective infrared radiance measurement step). Then, the reflection distribution of the light incident on the observation point in the same optical path as the infrared light whose radiance is measured is measured (1004: reflection distribution measurement step). Further, the emissivity of the temperature-measured object is acquired by using the radiance of infrared light measured by multiple reflection, the radiance of infrared light measured without multiple reflection, and the measured reflection distribution (1005: It may have an emissivity acquisition step).

The spectral radiance L ₂ described above in the reflected infrared light radiance measuring step measures, measures the spectral radiance L ₁ described above in the non-reflective infrared radiance measurement step. In addition, the reflection distribution coefficient γ is acquired by the reflection distribution measurement step.

Further, in the emissivity acquisition step, α is obtained from the relational expression between the acquired γ and the retained α and γ. _{Then, the spectral emissivity ε θ} of the temperature measurement target is obtained by substituting _RL and α obtained from the measured L ₂ and L _{1 into the mathematical formula (4).} Here, since ε _eff = ε _θ × _RL , ε _eff may be further obtained.

Then, by correcting with these obtained emissivity, the temperature of the temperature measurement target can be measured with high accuracy. It is preferable to use ε _{eff for the correction.} This is because the apparent emissivity is increased due to multiple reflections, so the error can be reduced as compared with the case of using _{ε θ.}

The order of each step is not limited to the illustrated embodiment, and for example, the reflection distribution measurement step may be performed first, or may be performed in combination with the step of measuring the reflection and non-reflection radiance.
(Hardware configuration)

FIG. 11 is a conceptual diagram showing an example of a computer that realizes the above-mentioned temperature measuring device and temperature measuring method. As shown, the CPU 1101, the non-volatile memory 1102, the main memory 1103, the graphic card 1104, the I / O controller 1105, the interface 1106 such as USB, IEEE, and LAN, the BIOS 1107, and the PCI slot 1108, which are provided on the motherboard or the like. , Real-time clock 1109 and the like, and a bus connecting these to each other and a chipset (north bridge, south bridge) 1110 connecting the buses.

The "chipset" 1110 is a set of large-scale integrated circuits (LSIs) mounted on the motherboard of a computer and integrated with a communication function between an external bus of a CPU and a standard bus for connecting a memory and peripheral devices, that is, a bridge function. be. There are cases where a two-chipset configuration is adopted and cases where a one-chipset configuration is adopted. A north bridge is provided on the side close to the CPU and main memory, and a south bridge is provided on the side far from the interface with a relatively low-speed external I / O.

The north bridge includes a CPU interface, a memory controller, and a graphic interface. As the integration progresses, most of the functions of the conventional north bridge may be carried by the CPU. The north bridge is connected to the memory slot of the main memory via a memory bus, and is connected to the graphic card slot of the graphic card by a high-speed graphic bus (AGP, PCI Express).

The south bridge is connected to a PCI interface (PCI slot) via a PCI bus, and is responsible for I / O functions and sound functions with an ATA (SATA) interface, a USB interface, an Ethernet interface, and the like. Incorporating circuits that support PS / 2 ports, floppy disk drives, serial ports, parallel ports, and ISA buses that do not require or do not require high-speed operation will hinder the speeding up of the chipset itself. Therefore, it may be separated from the chip of the south bridge and assigned to another LSI called a super I / O chip.

A "bus" is provided to connect a CPU (MPU) with peripheral devices and various control units. Also, the buses are connected by the above-mentioned chipset. The memory bus used for connection with the main memory may adopt a channel structure instead of this in order to increase the speed. A serial bus or a parallel bus can be used as the bus. In the parallel bus, while the serial bus transfers data bit by bit, the original data itself or a plurality of bits cut out from the original data are grouped together and transmitted at the same time through a plurality of communication paths. A dedicated clock signal line is provided parallel to the data line to synchronize data demodulation on the receiving side. It is also used as a bus that connects the front side bus (chipset) of the CPU and an external device. Types of buses include GPIB, IDE / (parallel) ATA, SCSI, and PCI. Since there is a limit to the speedup, the data line may be a serial bus in the improved version of PCI Express or the improved version of serial ATA of parallel ATA.

The "CPU" (MPU) sequentially reads, interprets, and executes instruction sequences called programs in the main memory, and outputs information consisting of signals to the main memory as well. The CPU functions as a center for performing calculations in the computer. The CPU is composed of a CPU core part that is the center of calculation and a peripheral part thereof, and a register and a cache memory inside the CPU, an internal bus that connects the cache memory and the CPU core, a DMA controller, a timer, and a north bridge. The interface with the connection bus with is included. A plurality of CPU cores may be provided in one CPU (chip).

An example of a "nonvolatile memory" (HDD) is a hard disk drive. The basic structure consists of a magnetic disk, a magnetic head, and an arm on which the magnetic head is mounted. As the external interface, SATA (ATA in the past) can be adopted. A sophisticated controller, such as SCSI, is used to support communication between hard disk drives. For example, when copying a file to another hard disk drive, the controller can read the sector and transfer it to another hard disk drive for writing. At this time, the memory of the host CPU is not accessed. Therefore, it is not necessary to increase the load on the CPU.

As the non-volatile memory, an SSD composed of "(NAND flash) may be adopted together with the HDD, or may be adopted in place of the HDD.

The main memory is composed of volatile memory. The most representative is the DRAM dynamic ram.

The BIOS is used to read the operating system into the main memory when the computer is started up so that the application or the like can be executed. It is connected to the south bridge as described above, but may be connected to the north bridge.

The I / O controller is used to connect to an external device. The USB connector is one example. Infrared light receiving elements, visible light receiving elements, etc. are connected and receive the input of their detection signals. In addition, a shutter and a chopper are also connected, and a signal for driving them is output.

The IEEE1394 connector is the most representative communication standard interface.

The PCI slot is an interface for connecting a functional circuit to a computer.

An OS (operating system) is basic software for running a computer. It provides an interface for users and application programs, and plays a role in efficiently managing functional parts such as hardware and each resource.

A device driver is a program for controlling the hardware of a device for making various devices attached to a computer available to a user or an application via an operating system.

The non-volatile memory 1102 stores various programs such as a multiple reflection program, a reflected infrared light radiance measurement program, a non-reflective infrared light radiance measurement program, a reflection distribution measurement program, and an emissivity acquisition program. .. The data include radiance L ₁ , radiance L ₂ , radiance ratio _RL , reflected light intensity (I _θ , I _{θ 1} , I _{θ 2} , ...), Reflection distribution coefficient γ, parameters α, γ and α. Various information such as the relational expression of is stored. Then, these programs and data are read into the holding area of the main memory and executed in the work area.
<Effect of Embodiment 1>

The temperature measuring device of the present embodiment can provide a temperature measuring device capable of also measuring the reflection distribution of the observation point for measuring the radiance.
<Embodiment 2>
<Outline of Embodiment 2>

The temperature measuring device of the present embodiment is based on the first embodiment, and is characterized in that the infrared light receiving unit has a polarized light receiving means for receiving polarized infrared light.

FIG. 12 is a conceptual diagram showing an example of the temperature measuring device of the present embodiment. As shown in the figure, the temperature measuring device is an "infrared light incident part" composed of an "infrared light receiving part" 1201, an "opposite side reflecting part" 1202, an "different wavelength light source" 1203, and an "infrared light transmitting filter" 1204. The infrared light receiving unit has the "reflecting distribution measuring means" 1205 and the "reflection stopping unit" 1206 provided on the opposite side reflecting unit, and the infrared light receiving unit has the "polarized light receiving means" 1212. In this figure, it also has a "lens" 1207. The temperature measuring device of the present embodiment is the same as the temperature measuring device of the first embodiment except that the infrared receiving unit has the polarized light receiving means. Therefore, the infrared receiving unit having the polarized light receiving means will be described, and other configurations will be described. The description of is omitted.

The "polarized light receiving means" 1212 has a function of receiving polarized infrared light. In the example of this figure, the p-polarizing filter is arranged in front of the infrared light receiving element. As a result, the infrared light receiving element can receive p-polarized light.

FIG. 13 shows the results of experiments or simulations of the emissivity of the polarization direction in the polarization direction of various samples ((a) Si wafer, (b) aluminum, (c) cold-rolled steel sheet, (d) stainless steel sheet) (the following documents). Was referred to). The emissivity and reflectance of Si wafers and various metals vary greatly depending on the polarization. In both cases, the p-polarized emissivity increases (the p-polarized reflectance decreases) in the direction of θ = 70 to 80 degrees. On the contrary, the s-polarized emissivity decreases (the s-polarized reflectance increases). Therefore, in this method, if p-polarized light is used in the direction of θ = 70 to 80 degrees, the emissivity increases, so that the apparent emissivity is increased by multiple reflections to further enhance the effect of the present invention for measuring the temperature. (References: Toru Inuchi, Ishii, Emissivity of glossy metals near room temperature using polarized light intensity, Proceedings of the Society of Automatic Measurement and Control, 36, 395/401 (2000)). Moreover, since the variation in the measured values can be reduced, it can contribute to further improving the accuracy of the temperature measurement.

FIG. 14 is a conceptual diagram mainly showing an infrared light receiving unit of another aspect. As shown in the figure, it may be configured so that both p-polarized light and s-polarized light can be received. As shown in the figure, the infrared light from the observation point is separated by the "spectral prism" 1401, while the infrared light is received by the "infrared light receiving element" 1403 via the "p polarizing filter" 1402. The other spectroscopic infrared light is received by the "infrared light receiving element" 1405 via the "s polarizing filter" 1404.
(Hardware configuration)

The temperature measuring device of the present embodiment can be realized according to the hardware configuration of the first embodiment.
(Temperature measurement method)

The temperature measuring method by the temperature measuring device of the present embodiment is the same as the temperature measuring method of the first embodiment.
<Effect of Embodiment 2>

With the temperature measuring device of the present embodiment, the accuracy of temperature measurement can be further improved by increasing the apparent emissivity due to multiple reflections.

0101 Infrared light receiving part 0102 Opposite side reflecting part 0103 Different wavelength light source 0104 Infrared light transmitting filter 0105 Reflection distribution measuring means 0106 Reflection stop part 0107 Lens 0108 Temperature measurement target 0109 Infrared light reflecting filter 0110 Light receiving side reflecting part 0111 Hole 0112 Arrow direction 0113 Light receiving element

Claims (7)

An infrared receiver that measures the radiance of infrared light from the observation point to be measured,
An opposing reflecting unit that reflects infrared light from the observation point to be measured and guides it to the infrared receiving unit.
A different wavelength light incident part that injects a different wavelength light having a wavelength different from that of the infrared light in the same optical path as the infrared light light path that the infrared light receiving part receives from the observation point at the observation point to be temperature-measured. ,
A reflection distribution measuring means provided on the opposite side reflecting part for measuring the reflection distribution of different wavelength light from the observation point to be measured by the opposite side reflecting part, and
A reflection stop part that stops reflection by the opposite side reflection part, and a reflection stop part
A temperature measuring device having. The temperature measuring device according to claim 1, wherein the reflection stop unit is a shutter means that operates so as to be openable and closable between the opposite side reflection unit and the observation point. The opposite side reflecting unit has an infrared light reflecting filter which is a filter that reflects most of the infrared light and transmits light of different wavelengths.
The temperature measuring device according to claim 1 or 2, wherein the reflection distribution measuring means is configured to observe the distribution of different wavelength light transmitted through the infrared light reflection filter. The temperature measuring device according to any one of claims 1 to 3, further comprising a light receiving side reflecting unit that does not interfere with the reception of infrared rays on the temperature measuring target side of the infrared receiving unit. The temperature measuring device according to any one of claims 1 to 4, wherein the infrared light receiving unit has a polarized light receiving means for receiving polarized infrared light. A multiple reflection step that multiple-reflects infrared light from the observation point to be measured,
A reflected infrared light radiance measurement step for measuring the radiance of multiple reflected infrared light,
A non-reflective infrared radiance measurement step that measures infrared light from an observation point to be measured without multiple reflections,
A reflection distribution measurement step for measuring the reflection distribution of light incident on the observation point in the same optical path as the infrared light whose radiance is measured, and a reflection distribution measurement step.
A temperature measuring method having. The emissivity acquisition step of acquiring the emissivity of the temperature-measured object using the radiance of infrared light measured by multiple reflection, the radiance of infrared light measured without multiple reflection, and the measured reflection distribution. The temperature measuring method according to claim 6, further comprising.

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