JP2021119594A - Imaging device - Google Patents

Abstract

To provide an imaging device with higher durability.SOLUTION: An imaging device 100A includes: a semiconductor substrate 1 including a pixel region 30 and a peripheral region 40 adjacent to the pixel region 30 in a plan view; an insulating layer 2 existing on the semiconductor substrate 1; a plurality of pixel electrodes 3 existing on the insulating layer 2 in the pixel region 30; a photoelectric conversion layer 4; a counter electrode 5; and a voltage supply electrode 45a for supplying voltage to the counter electrode 5. The voltage supply electrode 45a includes: a first electrode 13 electrically connected to the counter electrode 5 and including a first part extending along an outer edge of the pixel region 30 on the insulating layer 2 in the peripheral region 40; a second electrode 14 existing in the insulating layer 2 and including a second part extending along the outer edge; and a plurality of plugs 15 connecting the first part of the first electrode 13 and the second part of the second electrode 14 and arranged along the outer edge.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to an imaging device.

Patent Document 1 discloses an organic film laminated type imaging device. The image pickup apparatus described in Patent Document 1 includes a photoelectric conversion unit having a structure in which a photoelectric conversion layer is sandwiched between a counter electrode and a pixel electrode. A voltage is supplied to the counter electrode via a plug. In the technique described in Patent Document 1, in addition to a pixel region and peripheral circuits such as a vertical driver, a column ADC (analog-digital converter), and a horizontal driver, a peripheral region is arranged. The peripheral region is a region where the counter electrode and the voltage supply electrode are connected. Further, the peripheral area is arranged between the pixel area and the pad.

Japanese Patent No. 4625872

It is desired to improve the durability of the image pickup apparatus.

In order to solve the above problems, the image pickup apparatus according to one aspect of the present disclosure includes a semiconductor substrate having a pixel region in which a plurality of pixels are arranged and a peripheral region adjacent to the pixel region in a plan view, and the above. The insulating layer located on the semiconductor substrate, the plurality of pixel electrodes located on the insulating layer in the pixel region, the photoelectric conversion layer on the plurality of pixel electrodes, and the pixels located above the semiconductor substrate. A counter electrode facing the plurality of pixel electrodes via the photoelectric conversion layer in the region and a voltage supply electrode for supplying a voltage to the counter electrode are provided, and the voltage supply electrode is the peripheral region. A first electrode including a first portion extending along the outer edge of the pixel region on the insulating layer and electrically connected to the counter electrode, and a second electrode located in the insulating layer and extending along the outer edge. A second electrode comprising a portion and a plurality of plugs, each connecting the first portion of the first electrode and the second portion of the second electrode and arranged along the outer edge, are included. In plan view, at least a part of the first portion overlaps with the second portion.

In addition, the comprehensive or specific embodiment of the present disclosure may be realized by an element, a device, or an apparatus. In addition, the comprehensive or specific aspects of the present disclosure may be realized by any combination of elements, devices, and devices. The additional effects and benefits of the disclosed embodiments will be apparent from the specification and drawings. The effects and / or advantages are individually provided by the various embodiments or features disclosed in the specification and drawings, and not all are required to obtain one or more of these.

According to the embodiment of the present disclosure, the durability is improved and the image pickup apparatus is realized.

FIG. 1 is a diagram showing a planar structure of an image pickup apparatus according to the first embodiment of the present disclosure. FIG. 2 is a schematic cross-sectional view taken along the line AA of FIG. FIG. 3 is a schematic cross-sectional view taken along the line BB of FIG. FIG. 4 is a schematic cross-sectional view according to the first modification in line BB of FIG. FIG. 5 is a schematic cross-sectional view according to a second modification in line AA of FIG. FIG. 6 is a diagram showing a planar structure of the image pickup apparatus according to the second embodiment of the present disclosure. FIG. 7 is a diagram showing a planar structure of the image pickup apparatus according to the third embodiment of the present disclosure. FIG. 8 is a block diagram showing a configuration example of a camera system having an image pickup apparatus according to the embodiment of the present disclosure.

(Knowledge on which this disclosure was based)
A voltage supply electrode for supplying a voltage to the counter electrode is provided on the insulating layer in the peripheral region. The voltage supply electrodes are formed over a relatively long distance along the outer edge of the pixel region. Therefore, it was found that the adhesion between the insulating layer and the insulating layer affects the durability of the image pickup apparatus. Further, since the voltage supply electrode is formed in the same layer as the pixel electrode, it is desirable that the voltage supply electrode is formed by the same material and process as the pixel electrode. Therefore, it is necessary to have both the material characteristics required for the voltage supply electrode and the material characteristics required for the pixel electrode. However, as a material for the pixel electrode, electrical characteristics such as a work function are important in consideration of charge transport with the photoelectric conversion layer and the like.

Therefore, the present inventors have diligently studied the present disclosure based on the idea that a material-independent structural device is effective for improving the adhesion between the voltage supply electrode and the insulating layer. I came to invent it.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. It should be noted that all of the embodiments described below show comprehensive or specific examples. Numerical values, shapes, materials, components, arrangement and connection forms of components, steps, step order, and the like shown in the following embodiments are examples, and are not intended to limit the present disclosure. The various aspects described herein can be combined with each other as long as there is no conflict. Further, among the components in the following embodiments, the components not described in the independent claims indicating the highest level concept are described as arbitrary components. In the following description, components having substantially the same function are indicated by common reference numerals, and the description may be omitted.

[Item 1]
The image pickup apparatus according to one aspect of the present disclosure includes a semiconductor substrate having a pixel region in which a plurality of pixels are arranged, a peripheral region adjacent to the pixel region, and an insulating layer located on the semiconductor substrate in a plan view. A plurality of pixel electrodes located on the insulating layer in the pixel region, a photoelectric conversion layer on the plurality of pixel electrodes, and a photoelectric conversion layer located above the semiconductor substrate, and via the photoelectric conversion layer in the pixel region. A counter electrode facing the plurality of pixel electrodes and a voltage supply electrode for supplying a voltage to the counter electrode are provided, and the voltage supply electrode has a pixel region on the insulating layer in the peripheral region. A first electrode including a first portion extending along the outer edge and electrically connected to the counter electrode, and a second electrode located in the insulating layer and including a second portion extending along the outer edge. Each includes a plurality of plugs, each connecting the first portion of the first electrode and the second portion of the second electrode and arranged along the outer edge, the first portion in plan view. At least a part of the above overlaps with the second part.

According to the configuration of item 1, the second electrode is arranged in the insulating layer under the first electrode, and a plurality of plugs are arranged under the first electrode to connect the first electrode and the second electrode. As a result, the mechanical strength of the voltage supply electrode is increased, the adhesion between the voltage supply electrode and the insulating layer is improved, and the adhesion between the counter electrode, the photoelectric conversion layer and the pixel electrode is improved. As a result, an image pickup device with improved durability is realized.

[Item 2]
In the image pickup apparatus of item 1, the first portion is in contact with the lower surface of the counter electrode.

According to the configuration of item 2, since the first electrode is in direct contact with the counter electrode, the electrical connection between the voltage supply electrode and the counter electrode is ensured.

[Item 3]
The image pickup apparatus of item 1 further includes a connecting electrode including a third portion extending along the outer edge, the third portion is electrically connected to the counter electrode, and the first portion is the third portion. It touches the lower surface of.

According to the configuration of item 3, the first electrode is electrically connected to the counter electrode via the connecting electrode. Therefore, even when the connection electrode having a function of a light-shielding layer or the like is provided on the counter electrode, the voltage can be supplied from the voltage supply circuit to the counter electrode.

[Item 4]
In the image pickup apparatus according to any one of items 1 to 3, the first electrode is located in the same layer as the pixel electrode.

According to the configuration of item 4, since the first electrode and the pixel electrode can be formed in the same manufacturing process, the manufacturing process can be reduced as compared with the normal manufacturing method. Further, the flattening of the layer including the first electrode and the pixel electrode becomes easy.

[Item 5]
In the image pickup apparatus according to any one of items 1 to 4, the height of the first electrode is equal to the height of the pixel electrode with reference to the surface of the semiconductor substrate.

According to the configuration of item 5, since the height of the first electrode and the height of the pixel electrode are equal to each other, flattening of the layer including the first electrode and the pixel electrode becomes easy.

[Item 6]
In the image pickup apparatus according to any one of items 1 to 5, the first electrode is made of the same material as the pixel electrode.

According to the configuration of item 6, since the first electrode and the pixel electrode are made of the same material, the manufacturing process can be reduced and the flattening can be facilitated as compared with the normal manufacturing method.

[Item 7]
In the imaging device according to any one of items 1 to 6, the first electrode is any one of Cu, W, Ti, Ta, Al, or any one of Cu, W, Ti, Ta, Al. Contains one compound.

According to the configuration of item 7, since the first electrode contains the material used in the CMOS process, the affinity with the CMOS process can be increased.

[Item 8]
In the image pickup apparatus according to any one of items 1 to 7, the pixel region is a quadrangle in a plan view, and the voltage supply electrode is arranged along each of two opposite sides of the pixel region in a plan view. Will be done.

According to the configuration of item 8, since the second electrode is arranged under the first electrode along the two sides of the long side or the short side of the pixel area, the reinforcement on the two sides of the pixel area is performed along only one side. Adhesion is further improved as compared with the case where the voltage supply electrode is arranged.

[Item 9]
In the image pickup apparatus according to any one of items 1 to 8, the pixel region is a quadrangle in a plan view, and the voltage supply electrodes are arranged along each of the four sides of the pixel region in a plan view. ..

According to the configuration of item 9, the second electrode is arranged under the first electrode along the four sides of the long side and the short side of the pixel region. Adhesion is further improved as compared with the case where the voltage supply electrode is arranged.

[Item 10]
In the imaging device according to any one of items 1 to 9, the resistivity of the material of the second electrode is smaller than the resistivity of the material of the first electrode.

According to the configuration of item 10, since the resistivity of the entire electrode from the voltage supply electrode to the counter electrode is lowered, the voltage response speed of the counter electrode is improved, and the image quality characteristics such as shading are improved.

[Item 11]
In the imaging device according to any one of items 1 to 10, the resistance value in the direction along the outer edge of the second electrode is smaller than the resistance value in the direction along the outer edge of the first electrode.

According to the configuration of item 11, since the resistance value of the entire electrode from the voltage supply electrode to the counter electrode is lowered, the voltage response speed of the counter electrode is improved, and the image quality characteristics such as shading are improved.

(First Embodiment)
The overall configuration of the image pickup apparatus according to the present embodiment will be described with reference to FIGS. 1, 2 and 3. FIG. 1 is a diagram illustrating an example of a planar structure of the image pickup apparatus 100A according to the present embodiment. As shown in each drawing, the two-dimensional directions in which the pixels 20 of the image pickup apparatus 100A are arranged are defined as the X-axis and the Y-axis, and the direction perpendicular to the XY plane is defined as the Z-axis.

As shown in FIG. 1, the image pickup apparatus 100A includes a semiconductor substrate 1 (see FIG. 2) and a plurality of pixels 20 arranged in a matrix on the semiconductor substrate 1. The semiconductor substrate 1 has a pixel region 30 and a peripheral region 40 adjacent to the pixel region 30 outside the pixel region 30 in a plan view. The pixel area 30 is an area in which a plurality of pixels 20 are formed. The peripheral region 40 is formed along the outer edge of the pixel region 30 and includes a voltage supply electrode 45a for supplying a voltage to the counter electrode.

The plurality of pixels 20 form a pixel region 30 by being arranged two-dimensionally on the semiconductor substrate 1, for example. In the example shown in FIG. 1, the plurality of pixels 20 are arranged in the row direction and the column direction. In the drawing, the vertical direction on the paper is the column direction, and the horizontal direction is the row direction. In the illustrated example, the center of each pixel 20 is located on a grid point of a square grid. Of course, the arrangement of the pixels 20 is not limited to the illustrated example, and for example, a plurality of pixels 20 may be arranged so that each center is located on a lattice point such as a triangular lattice or a hexagonal lattice. The plurality of pixels 20 may be arranged one-dimensionally. In this case, the image pickup device can be used as a line sensor.

In the configuration illustrated in FIG. 1, the peripheral region 40 is a region that is arranged around the pixel region 30 in a plan view and includes a peripheral circuit.

Next, a partial configuration of the image pickup apparatus 100A according to the present embodiment will be described in detail with reference to FIGS. 2 and 3. FIG. 2 is a schematic cross-sectional view taken along the line AA of FIG. 1, and FIG. 3 is a schematic cross-sectional view taken along the line BB of FIG.

As shown in FIG. 2, the image pickup apparatus 100A is a laminated image sensor in which a photoelectric conversion layer is provided above the circuit, and has a semiconductor substrate 1 and a plurality of pixels 20 formed on the semiconductor substrate 1. It includes a rectangular pixel region 30 in a plan view and a peripheral region 40 arranged adjacent to the periphery of the pixel region 30 in a plan view and including a peripheral circuit. In the image pickup apparatus 100A, the pixel region 30 is located on the pixel electrode 3, the counter electrode 5 facing the pixel electrode 3, the photoelectric conversion layer 4 sandwiched between the pixel electrode 3 and the counter electrode 5, and the semiconductor substrate 1. A detection circuit 11 for detecting the potential of the pixel electrode 3 is provided. The peripheral region 40 includes a voltage supply electrode 45a, which is composed of a first electrode 13, a second electrode 14, and a plug 15 and supplies a voltage to the counter electrode 5, and transistors 21 to 23 of the peripheral circuit.

In the pixel region 30, a detection circuit 11 is configured corresponding to each pixel 20 so as to straddle the interface between the semiconductor substrate 1 and the insulating layer 2. The pixel electrode 3 is formed on the main surface of the insulating layer 2 on the positive side (hereinafter referred to as “upper”) in the Z-axis direction, that is, on the upper surface. The pixel electrode 3 is connected to the corresponding detection circuit 11 via a plug 12. The pixel electrode 3 is an electrode for collecting the electric charge generated by the photoelectric conversion layer 4. The pixel electrode 3 is made of a metal material such as titanium nitride (TiN). The pixel electrode 3 may be composed of copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), aluminum (Al), or a compound thereof. Further, the plurality of pixel electrodes 3 have a uniform film thickness and a flat upper surface.

The pixel electrodes 3 are arranged two-dimensionally on the upper surface of the insulating layer 2 in two axes in the X-axis direction and the Y-axis direction. At this time, the plurality of pixel electrodes 3 are arranged on the upper surface of the insulating layer 2 in a matrix, for example, and have a constant distance from each other. The pixel electrodes 3 are arranged corresponding to the arrangement of the pixels 20. For example, when a plurality of pixels 20 are arranged in a matrix, the plurality of pixel electrodes 3 are arranged in a matrix according to the arrangement of the pixels 20.

The detection circuit 11 is provided corresponding to each of the plurality of pixel electrodes 3, detects the signal charge collected by the corresponding pixel electrode 3, and outputs a signal voltage corresponding to the charge. The detection circuit 11 is composed of, for example, a MOS (Metal Oxide Semiconductor) circuit, a TFT (Thin Film Transistor) circuit, or the like. The detection circuit 11 includes, for example, an amplification transistor whose gate is connected to the pixel electrode 3, and the amplification transistor outputs a signal voltage according to the amount of signal charge. The detection circuit 11 is shielded from light by a light-shielding layer (not shown) provided inside the insulating layer 2 or the like.

The plug 12 electrically connects the pixel electrode 3 of each pixel 20 and the corresponding detection circuit 11. The plug 15 electrically connects the first electrode 13 and the second electrode 14 constituting the voltage supply electrode 45a. The plugs 12 and 15 are formed by embedding a conductive material such as copper (Cu) or tungsten (W) in the insulating layer 2. The second electrode 14 is made of, for example, a metal material such as copper (Cu), aluminum (Al), or a compound thereof, and may be used for the wiring layers of the detection circuit 11 and the transistors 21 to 23 of the peripheral circuit. In the cross-sectional view shown in FIG. 2, two plugs 15 are formed, but the number of plugs 15 may be one or three or more in the cross section in the direction perpendicular to the outer edge of the pixel region.

The insulating layer 2 is formed on the semiconductor substrate 1 and includes a plurality of constituent layers 2a, 2b, 2c, 2d and 2e (hereinafter, 2a to 2e). Here, the semiconductor substrate 1 is made of, for example, silicon (Si) or the like. The plurality of constituent layers 2a to 2e are composed of, for example, silicon dioxide (SiO ₂ ) or the like. Wiring and wiring layers such as contact plugs are arranged in the constituent layers 2a to 2e. Further, an insulating film that functions as an etching stopper, for example, may be arranged between the constituent layers 2a to 2e. In FIG. 2, an insulating film is arranged between the constituent layers 2a to 2e. The number of constituent layers in the insulating layer 2 can be arbitrarily set, and is not limited to the examples of the five constituent layers 2a to 2e shown in FIG.

The photoelectric conversion layer 4 is laminated on the upper surface of the constituent layer 2e on which the pixel electrode 3 is arranged, and the counter electrode 5, the buffer layer 6, and the sealing layer 7 are sequentially laminated on the upper surface of the photoelectric conversion layer 4. There is. A color filter 8 in a transmission wavelength region corresponding to each pixel 20 is formed on the upper surface of the sealing layer 7, and a microlens 10 is further formed via a flattening layer 9.

A constituent layer of the insulating layer 2 is interposed in the gap between the adjacent pixel electrodes 3.

The photoelectric conversion layer 4 is a layer made of a photoelectric conversion material that generates an electric charge according to the intensity of the received light, and is sandwiched between the pixel electrode 3 and the counter electrode 5. The photoelectric conversion material is, for example, an organic semiconductor material, and includes at least one of a p-type organic semiconductor and an n-type organic semiconductor. It is desirable that the photoelectric conversion layer 4 has a uniform film thickness in the pixel region 30.

The counter electrode 5 is an electrode facing the pixel electrode 3. Further, the counter electrode 5 has a larger area than the pixel region 30 in a plan view. As shown in FIG. 2, the counter electrode 5 is arranged in the pixel region 30 so as to face the pixel electrode 3 with the photoelectric conversion layer 4 interposed therebetween. Further, the counter electrode 5 is formed so as to extend in the minus direction (hereinafter, outside) of the X axis from the pixel region 30, and overlaps with the peripheral region 40 in a plan view.

In the image pickup apparatus 100A according to the present embodiment, the peripheral region 40 is outside the photoelectric conversion layer 4 including the pixel region 30.

In the present embodiment, the counter electrode 5 is arranged on the side where the light of the image pickup apparatus 100A is incident. The counter electrode 5 may have translucency in order to allow light to enter the photoelectric conversion layer 4. As the material of the counter electrode 5, for example, a transparent oxide conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) may be used.

The first electrode 13 constituting the voltage supply electrode 45a is made of a conductive material different from that of the counter electrode 5. For example, the first electrode 13 may contain a highly conductive metal material. At this time, the first electrode 13 may contain the same material as the pixel electrode 3. For example, the first electrode 13 contains at least one of copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), and aluminum (Al). Further, the first electrode 13 may be a compound of these metal materials.

Further, the first electrode 13 is located in the same wiring layer as the pixel electrode 3. That is, the first electrode 13 and the pixel electrode 3 are in contact with a single continuous layer (constituent layer 2e in FIG. 2). By including the same material as the pixel electrode 3 and arranging the first electrode 13 in the same layer as the pixel electrode 3, more specifically, the height of the first electrode 13 and the pixel electrode with reference to the surface of the semiconductor substrate 1 are used. By making the height of 3 equal, the first electrode 13 and the pixel electrode 3 can be formed at the same time. As a result, the manufacturing time can be shortened and the manufacturing cost can be reduced.

Although not shown, a light-shielding layer is formed on the sealing layer 7 in a region other than the region where the color filter 8 is formed. By forming the light-shielding layer, external light is blocked from the region other than the effective pixel region, and light is prevented from entering the photoelectric conversion layer 4 in the region other than the effective pixel region. Here, the effective pixel area means an area in which pixels other than, for example, dummy pixels for detecting an output in darkness are arranged in the pixel area.

Further, a pad region is provided on the outer periphery of the image pickup apparatus 100A in a plan view. In the pad region, a recess extending from the flattening layer 9 to the upper surface of the constituent layer 2d of the insulating layer 2 is provided, and the pad 19 is formed on the bottom surface. Although detailed illustration is omitted, the pad 19 is electrically connected to a signal input / output circuit, a voltage supply circuit, and the like. The metal layer in the peripheral region 40 is formed by using, for example, copper (Cu).

As shown in FIG. 3, the first electrode 13 includes a first portion which extends on the insulating layer 2 along the outer edge of the pixel region 30 in the peripheral region 40 and is electrically connected to the counter electrode 5. .. The second electrode 14 includes a second portion located in the insulating layer 2 and extending along the outer edge of the pixel region 30. The plurality of plugs 15 connect the first portion of the first electrode 13 and the second portion of the second electrode 14, and are arranged along the outer edge of the pixel region 30. In a plan view, at least a part of the first portion of the first electrode 13 overlaps with the second portion of the second electrode 14. In the present embodiment, the first portion of the first electrode 13 is in contact with the lower surface of the counter electrode 5.

More specifically, the second electrode 14 is arranged parallel to the first electrode 13 in the Y direction, and a plurality of plugs 15 each connecting the first electrode 13 and the second electrode 14 are arranged on one side of the pixel region 30, that is, It is arranged along the Y-axis direction. Further, although not shown, the second electrode may be directly connected to the external PAD. In FIG. 3, a plurality of plugs 15 are arranged at equal intervals, but the intervals between the plugs 15 do not have to be uniform. For example, a region where the distance between the plugs 15 is close and a region where the distance between the plugs 15 is sparse may be mixed in the Y-axis direction. The distance between the plugs 15 in the dense region may be, for example, 1 times or more and 10 times or less the diameter of the plugs 15. The distance between the plugs 15 in the sparse region may be, for example, 100 times or more the diameter of the plugs 15. Alternatively, the distance between the plugs 15 in the sparse region may be, for example, 100 times or more and 10000 times or less the diameter of the plugs 15. By mixing a region where the distance between the plugs 15 is close and a region where the distance between the plugs 15 is sparse in the Y-axis direction, the length of the plug 15 can be made uniform in the Y-axis direction, and the flatness of the first electrode 13 can be improved.

Further, the number of plugs 15 arranged along the Y-axis direction may be 2 or more, for example, 3 or more, 10 or more, or 100 or more. Durability can be improved by increasing the number of plugs 15 arranged along the Y-axis direction.

Next, the imaging mechanism will be described.

The light incident on the image pickup apparatus 100A from above passes through the sealing layer 7, the buffer layer 6, and the counter electrode 5, and is incident on the photoelectric conversion layer 4. The photoelectric conversion layer 4 photoelectrically converts the incident light to generate an electric charge in a state where an appropriate bias voltage is applied by the pixel electrode 3 and the counter electrode 5. Here, the potential difference between the counter electrode 5 and the pixel electrode 3 becomes the bias voltage applied to the photoelectric conversion layer 4.

As described above, the electric charge generated by the photoelectric conversion layer 4 is transferred from the pixel electrode 3 to the storage region in the detection circuit 11 via the plug 12, and is temporarily stored. Then, it is output as a signal to the outside in a timely manner by the opening / closing operation of the transistor element or the like in the detection circuit 11.

In the image pickup apparatus 100A according to the present embodiment, a plurality of plugs 15 are arranged between the first electrode 13 and the second electrode 14 arranged in parallel with the first electrode 13. The first electrode 13 and the second electrode 14 overlap each other in a plan view. As used herein, the term "overlapping" includes not only a completely overlapping form but also a partially overlapping form and a non-overlapping form. According to the image pickup apparatus 100A of the present embodiment, the adhesion between the first electrode 13 and the lower insulating layer can be improved. As a result, the adhesion of the counter electrode 5, the photoelectric conversion layer 4, and the pixel electrode 3 can be improved. That is, the counter electrode 5 is arranged like a lid for the pixel electrode 3. Therefore, by improving the adhesion of the lid, the adhesion between the counter electrode 5, the photoelectric conversion layer 4, and the pixel electrode 3 can be improved.

When the second electrode 14 is made of a material having a lower resistance or a lower resistivity than the first electrode 13, the resistance value of the entire electrode from the PAD 19 to the counter electrode 5 via the voltage supply electrode 45a is lowered, and the voltage response of the counter electrode 5 is reduced. By improving the speed, it is possible to contribute to the improvement of image quality characteristics such as shading.

As described above, the image pickup apparatus 100A according to the present embodiment includes a semiconductor substrate 1 having a pixel region 30 in which a plurality of pixels 20 are arranged and a peripheral region 40 adjacent to the pixel region 30 in a plan view. An insulating layer 2 located on the semiconductor substrate 1, a plurality of pixel electrodes 3 located on the insulating layer 2 in the pixel region 30, a photoelectric conversion layer 4 on the plurality of pixel electrodes 3, and a position above the semiconductor substrate 1. A counter electrode 5 facing the plurality of pixel electrodes 3 via the photoelectric conversion layer 4 in the pixel region 30 and a voltage supply electrode 45a for supplying a voltage to the counter electrode 5 are provided. The voltage supply electrode 45a includes a first portion extending on the insulating layer 2 along the outer edge of the pixel region 30 in the peripheral region 40, and is electrically connected to the counter electrode 5 and is contained in the insulating layer 2. A plurality of second electrodes 14 including a second portion located and extending along the outer edge, and a plurality of electrodes each connecting the first portion of the first electrode 13 and the second portion of the second electrode 14 and arranged along the outer edge. Includes plug 15. Then, in a plan view, at least a part of the first portion of the first electrode 13 overlaps with the second portion of the second electrode 14.

As a result, the second electrode 14 is arranged in the insulating layer 2 under the first electrode 13, and a plurality of plugs 15 are arranged under the first electrode 13 to connect the first electrode 13 and the second electrode 14. .. Therefore, the mechanical strength of the voltage supply electrode 45a is increased, the adhesion between the voltage supply electrode 45a and the insulating layer 2 is improved, and the adhesion between the counter electrode 5, the photoelectric conversion layer 4 and the pixel electrode 3 is improved. As a result, the image pickup apparatus 100A with improved durability is realized.

FIG. 4 is a schematic cross-sectional view according to the first modification in line BB of FIG. In the voltage supply electrode 45b of this modification, in addition to the configuration of the image pickup apparatus 100A according to the first embodiment, the third electrode 16 is further arranged in parallel with the first electrode 13, and the second electrode 14 and the third electrode are arranged. A plug 17 connecting the 16 is arranged along one side of the pixel region 30. By doing so, the adhesion of the counter electrode 5, the photoelectric conversion layer 4 and the pixel electrode 3 is further improved, and the resistance value of the entire electrode from the PAD 19 to the counter electrode 5 via the voltage supply electrode 45b is lowered, and the image quality is further improved. The characteristics can be improved.

FIG. 5 is a schematic cross-sectional view according to a second modification in line AA of FIG. In the voltage supply electrode 45c of this modification, the first electrode 13 is not directly in contact with the counter electrode 5, but is electrically connected to the counter electrode 5 via the connection electrode 18. The connection electrode 18 includes a third portion that extends along the outer edge of the pixel region 30. The third portion of the connecting electrode 18 is electrically connected to the counter electrode 5. The first portion of the first electrode 13 is in contact with the lower surface of the third portion of the connection electrode 18. The connection electrode 18 is a conductive film, for example, a light-shielding layer made of chromium (Cr) or the like.

In this modification, the counter electrode 5 is arranged only in the pixel region 30 including the photoelectric conversion layer 4 in a plan view. The connection electrode 18 electrically connects a part of the upper surface of the counter electrode 5 and the upper surface of the first electrode 13. Even with such a configuration, the adhesion of the counter electrode 5, the photoelectric conversion layer 4, and the pixel electrode 3 is improved, and the entire electrode from the PAD 19 to the counter electrode 5 via the voltage supply electrode 45c and the connection electrode 18 is reached. The resistance value can be lowered and the image quality characteristics can be further improved.

(Second Embodiment)
FIG. 6 shows a plan view of the image pickup apparatus 100B according to the second embodiment of the present disclosure. The voltage supply electrodes 45a and 45d are arranged along two opposite sides outside the pixel region 30. The schematic cross-sectional view taken along the line BB and the line B'-B'of FIG. 6 has the configuration shown in FIG. 3 or 4. As a result, the adhesion of the counter electrode 5, the photoelectric conversion layer 4, and the pixel electrode 3 can be further improved as compared with the first embodiment, and the voltage response speed of the counter electrode 5 is improved, resulting in shading and the like. It can also contribute to the improvement of the image quality characteristics of.

(Third Embodiment)
FIG. 7 shows a plan view of the image pickup apparatus 100C according to the third embodiment of the present disclosure. The voltage supply electrodes 45a, 45d, 45e and 45f are arranged along the four opposing sides outside the pixel region 30. The schematic cross-sectional views taken along the BB line, the B'-B line, the CC line, and the C'-C' line of FIG. 7 all have the configuration shown in FIG. 3 or FIG. As a result, the adhesion of the counter electrode 5, the photoelectric conversion layer 4, and the pixel electrode 3 can be further improved as compared with the second embodiment, and the voltage response speed of the counter electrode 5 is improved, so that shading or the like can be achieved. It can also contribute to the improvement of image quality characteristics.

In the second and third embodiments, the first electrode 13 may be arranged in the same layer as the pixel electrode 3, and the first electrode 13 may be a pixel electrode, as in the first embodiment. It may be composed of the same material as No. 3, or the first electrode 13 may be composed of Cu, W, Ti, Ta, Al or a compound thereof.

(Fourth Embodiment)
FIG. 8 is a block diagram showing a configuration example of the camera system 200 according to the fourth embodiment of the present disclosure. Here, an example of the configuration of the camera system 200 including the image pickup apparatus 100A according to the first embodiment is shown.

The camera system 200 processes the image pickup device 100A shown in the first embodiment, the optical system 201 for condensing light such as a lens, and the data captured by the image pickup device 100A into signals, and outputs the data as an image or data. It is composed of a camera signal processing unit 202 for controlling the image pickup device 100A and a system controller 203 for controlling the camera signal processing unit 202.

The camera system 200 according to the present embodiment is a digital camera having an image pickup device having improved adhesion between the counter electrode 5, the photoelectric conversion layer 4 and the pixel electrode 3 by using the image pickup device 100A according to the first embodiment. It becomes.

The image pickup device used in the camera system 200 is not limited to the image pickup device 100A in the first embodiment, and may be the image pickup device 100B or 100C according to another embodiment.

The imaging apparatus of the present disclosure has been described above based on the first to fourth embodiments and modifications, but the present disclosure is not limited to these embodiments and modifications. As long as the gist of the present disclosure is not deviated, various modifications that can be conceived by those skilled in the art are applied to the present embodiment and the modified examples, and other forms constructed by combining some components in the embodiments and the modified examples. Is also included within the scope of this disclosure.

The imaging device according to the present disclosure includes various imaging devices having improved durability, such as a digital still camera, a medical camera, a surveillance camera, an in-vehicle camera, a digital single-lens reflex camera, and a digital mirrorless single-lens camera. It can be used for camera systems and sensor systems.

1 Semiconductor substrate 2 Insulation layer 2a, 2b, 2c, 2d, 2e Constituent layer 3 Pixel electrode 4 Photoelectric conversion layer 5 Opposite electrode 6 Buffer layer 7 Sealing layer 8 Color filter 9 Flattening layer 10 Microlens 11 Detection circuit 12, 15 , 17 Plug 13 1st electrode 14 2nd electrode 16 3rd electrode 18 Connection electrode 19 Pad 20 pixels 21, 22, 23, 24, 25, 26, 27, 28, 29 Transistor 30 Pixel area 40 Peripheral area 45a to 45f Voltage Supply electrode 100A, 100B, 100C Imaging device 200 Camera system 201 Optical system 202 Camera signal processing unit 203 System controller

Claims (11)

In a plan view, a semiconductor substrate having a pixel region in which a plurality of pixels are arranged and a peripheral region adjacent to the pixel region,
The insulating layer located on the semiconductor substrate and
A plurality of pixel electrodes located on the insulating layer in the pixel region,
The photoelectric conversion layer on the plurality of pixel electrodes and
A counter electrode located above the semiconductor substrate and facing the plurality of pixel electrodes via the photoelectric conversion layer in the pixel region.
A voltage supply electrode for supplying a voltage to the counter electrode and
With
The voltage supply electrode is
A first electrode including a first portion extending along the outer edge of the pixel region on the insulating layer in the peripheral region and electrically connected to the counter electrode.
A second electrode located in the insulating layer and including a second portion extending along the outer edge.
A plurality of plugs, each of which connects the first portion of the first electrode and the second portion of the second electrode and is arranged along the outer edge.
Including
In a plan view, at least a part of the first part overlaps with the second part.
Imaging device. The first portion is in contact with the lower surface of the counter electrode.
The imaging device according to claim 1. A connecting electrode including a third portion extending along the outer edge is further provided.
The third portion is electrically connected to the counter electrode and is
The first portion is in contact with the lower surface of the third portion.
The imaging device according to claim 1. The first electrode is located in the same layer as the pixel electrode.
The imaging device according to any one of claims 1 to 3. With reference to the surface of the semiconductor substrate, the height of the first electrode is equal to the height of the pixel electrode.
The imaging device according to any one of claims 1 to 4. The first electrode is made of the same material as the pixel electrode.
The imaging device according to any one of claims 1 to 5. The first electrode contains any one of Cu, W, Ti, Ta and Al, or a compound of any one of Cu, W, Ti, Ta and Al.
The imaging device according to any one of claims 1 to 6. The pixel area is a quadrangle in a plan view and is
The voltage supply electrode is arranged along each of the two opposing sides of the pixel region in a plan view.
The imaging device according to any one of claims 1 to 7. The pixel area is a quadrangle in a plan view and is
The voltage supply electrodes are arranged along each of the four sides of the pixel region in a plan view.
The imaging device according to any one of claims 1 to 8. The resistivity of the material of the second electrode is smaller than the resistivity of the material of the first electrode.
The imaging device according to any one of claims 1 to 9. The resistance value of the second electrode in the direction along the outer edge is smaller than the resistance value of the first electrode in the direction along the outer edge.
The imaging device according to any one of claims 1 to 10.

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