JP2021118191A - Semiconductor device, inspection method for semiconductor device, manufacturing method for semiconductor device, and inspection device - Google Patents

Abstract

To detect the occurrence of a failure in a bonding part between a semiconductor element and a conductive wire with higher accuracy.SOLUTION: A semiconductor device 1 includes a semiconductor element 2, a conductive wire 31, and a temperature measurement element 4. The conductive wire 31 is connected to the semiconductor element 2. The temperature measurement element 4 includes a connection part 35 and a detection unit. The detection unit is, for example, a diode 13. The connection part 35 can connect a test conductive wire 71, which is the same as the conductive wire 31. The diode 13 as the detection unit detects the temperature in the connection part 35 when the test conductive wire 71 is connected to the connection part 35 by wire bonding.SELECTED DRAWING: Figure 1

Description

This disclosure relates to semiconductor devices, semiconductor device inspection methods, semiconductor device manufacturing methods and inspection devices.

Conventionally, for a semiconductor device in which a conductive wire is connected to a semiconductor element by wire bond bonding, an inspection system has been proposed in which the state of the joint portion between the semiconductor element and the conductive wire is determined based on the appearance of the joint portion. (Refer to JP-A-8-11145).

Japanese Unexamined Patent Publication No. 8-11145

In the above-mentioned inspection system, the occurrence of defects at the joint between the semiconductor element and the conductive wire is determined based on the information obtained by processing the image of the joint. However, since it may not be possible to determine the occurrence of defects from the appearance of the joint, the above-mentioned inspection system relates to the accuracy of detecting the occurrence of defects at the joint, that is, the accuracy of determining whether the joining conditions of the wire bond joint are good or bad. There is room for improvement.

Therefore, an object of the present disclosure is a semiconductor device capable of detecting the occurrence of a defect at a junction between a semiconductor element and a conductive wire with higher accuracy than before, a method for inspecting a semiconductor device, a method for manufacturing a semiconductor device, and the like. To provide an inspection device.

A semiconductor device according to the present disclosure includes a semiconductor element, a conductive wire, and a temperature measuring element. The conductive wire is connected to the semiconductor element. The temperature measuring element includes a connecting part and a detecting part. The connection portion can be connected to the same test conductive wire as the conductive wire. The detection unit detects the temperature at the connection portion when the test conductive wire is connected to the connection portion by wire bond joining.

The method for inspecting a semiconductor device according to the present disclosure includes a step of preparing a member to be a semiconductor device including a temperature measuring element, and a step of measuring the temperature. The temperature measuring element includes a connecting part and a detecting part. The connection part can be connected to a test conductive wire. The detection unit detects the temperature at the connection portion when the test conductive wire is connected to the connection portion by wire bond joining. In the step of measuring the temperature, the temperature of the connection portion is measured based on the output data output by the detection unit according to the temperature at the connection portion while the test conductive wire is wire-bonded to the connection portion.
(Independent: Manufacturing method of semiconductor device including the inspection method of claim 6)
A method for manufacturing a semiconductor device according to the present disclosure includes a step of inspecting and a step of processing. In the inspection step, a member to be a semiconductor device is inspected by using the above-mentioned semiconductor device inspection method. In the processing process, the inspected member is processed.

The inspection device according to the present disclosure is an inspection device for inspecting a semiconductor device including a temperature measuring element. The inspection device includes a wire bond mechanism unit, an adjustment unit, a temperature measurement circuit, a storage unit, and a determination unit. The adjusting unit adjusts the process conditions of the wire bond mechanism unit. The temperature measuring circuit can be electrically connected to the temperature measuring element. The storage unit stores the reference value used for the inspection. The determination unit measures the temperature at the connection part to which the test conductive wire is connected when the test conductive wire is connected to the temperature measurement element by wire bond joining in the temperature measurement circuit. And the measured temperature are compared to determine the quality of the wire bond joining conditions.

According to the above, the occurrence of defects at the joint between the semiconductor element and the conductive wire can be detected with higher accuracy than before.

It is sectional drawing of the semiconductor device which concerns on Embodiment 1. FIG. FIG. 5 is a schematic cross-sectional view of a temperature measuring element of the semiconductor device shown in FIG. It is a plane schematic diagram of the temperature measuring element shown in FIG. It is a flowchart for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a schematic diagram for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a plan view of the member shown in FIG. It is a schematic diagram of the temperature measurement circuit used in the inspection process in the manufacturing method of the semiconductor device shown in FIG. It is a schematic diagram for demonstrating the inspection process in the manufacturing method of the semiconductor device shown in FIG. It is sectional drawing for demonstrating the inspection process in the manufacturing method of the semiconductor device shown in FIG. It is a graph which shows the change of the voltage detected by the temperature measurement circuit in the inspection process in the manufacturing method of the semiconductor device shown in FIG. It is a flowchart for demonstrating an example of the inspection process in the manufacturing method of the semiconductor device shown in FIG. It is a block diagram for demonstrating the structure of the inspection apparatus of the semiconductor apparatus which concerns on this embodiment. It is sectional drawing for demonstrating the modification of the semiconductor device which concerns on Embodiment 1. FIG. It is sectional drawing of the semiconductor device which concerns on Embodiment 2. FIG. It is a schematic diagram for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a schematic diagram for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is sectional drawing of the semiconductor device which concerns on Embodiment 3. FIG. It is a schematic diagram for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a schematic diagram for demonstrating the structure of the semiconductor device which concerns on Embodiment 4. FIG. It is a schematic diagram for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a schematic diagram for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is sectional drawing which shows the 1st modification of the semiconductor device which concerns on Embodiment 4. FIG. It is sectional drawing which shows the 2nd modification of the semiconductor device which concerns on Embodiment 4. FIG. It is sectional drawing which shows the 3rd modification of the semiconductor device which concerns on Embodiment 4. FIG.

Hereinafter, embodiments of the present disclosure will be described. The same reference number is assigned to the same configuration, and the description is not repeated.

Embodiment 1.
<Semiconductor device configuration>
FIG. 1 is a schematic cross-sectional view of the semiconductor device according to the first embodiment. FIG. 2 is a schematic cross-sectional view of the temperature measuring element of the semiconductor device shown in FIG. FIG. 3 is a schematic plan view of the temperature measuring element shown in FIG. The semiconductor device 1 shown in FIG. 1 mainly includes a lead frame 3, a semiconductor element 2, a conductive wire 31, a temperature measuring element 4, and a sealing resin 33. A semiconductor element 2 and a temperature measuring element 4 are arranged on the surface of the lead frame 3. Although only one semiconductor element 2 is shown in FIG. 1, a plurality of semiconductor elements 2 may be arranged on the surface of the lead frame 3. Any semiconductor element can be used as the semiconductor element 2, and for example, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), an IC (Integrated Circuit) chip, and an LSI (Large Scale Integration) can be used. ) A chip or the like may be used as the semiconductor element 2.

The semiconductor element 2 is fixed to the lead frame 3 by solder as a connecting member 32. Other materials may be used as the connecting member 32, and for example, silver, resin, or the like can be used. Although the temperature measuring element 4 is fixed to the lead frame 3 by solder or silver (not shown), it may be fixed to the lead frame 3 by any other connecting member 32. The conductive wire 31 connects the electrode (not shown) of the semiconductor element 2 and the lead frame 3. The temperature measuring element 4 can be arranged at an arbitrary position on the surface of the lead frame 3. Copper (Cu) or a copper alloy can be used as the material of the lead frame 3. The thickness of the lead frame 3 is, for example, 0.5 mm or more and 1 mm or less.

The temperature measuring element 4 is a semiconductor element for temperature detection, and mainly includes a connecting portion 35 and a diode 13 as a detecting portion. A first electrode 12a and a second electrode 12b are connected to the diode 13. The diode 13 is formed on the main surface of the silicon substrate 11. A connection portion 35 is formed on the diode 13. The first electrode 12a and the second electrode 12b are formed on the main surface of the silicon substrate 11 so as to sandwich the connecting portion 35. The connecting portion 35 can connect the same test conductive wire 71 as the conductive wire 31 by wire bond joining. The material constituting the conductive wire 31 and the test conductive wire 71 is a metal such as aluminum or gold. The connecting portion 35 includes an isolation insulating film 14 and a metal film 15. The isolation insulating film 14 is formed so as to be in contact with the upper surface of the diode 13. The metal film 15 is formed on the isolation insulating film 14. The positions of the upper surfaces of the first electrode 12a and the second electrode 12b are closer to the silicon substrate 11 than the positions of the upper surfaces of the isolation insulating film 14. That is, the first electrode 12a and the second electrode 12b are separated from the metal film 15.

Any conductor can be used as the material constituting the first electrode 12a and the second electrode 12b, and for example, a metal such as nickel, gold, or aluminum can be used. Any insulator can be used as the material constituting the isolation insulating film 14, but it may be a resin material such as a polyimide resin or an inorganic material such as silicon oxide. The thickness of the isolation insulating film 14 is, for example, 1 μm or more and 5 μm or less, preferably 1.5 μm or more and 3 μm or less.

The material constituting the metal film 15 is preferably the same material as the material constituting the electrode of the semiconductor element 2. The thickness of the metal film 15 is, for example, 1 μm or more and 5 μm or less, preferably 2 μm or more and 3 μm or less.

The diode 13 as a detection unit detects the temperature at the connection unit 35 when the test conductive wire 71 is connected to the connection unit 35 by wire bond bonding. The thickness T of the diode 13 is, for example, 10 μm or less. The diode 13 includes a first electrode 12a and a second electrode 12b. The thickness of the temperature measuring element 4 having the above-described configuration is, for example, 0.1 mm or more and 1.0 mm or less.

As described above, the test conductive wire 71 is wire-bonded to the connection portion 35 located above the temperature measurement element 4. A part of the test conductive wire 71 may remain on the surface of the temperature measuring element 4, but may be removed from the surface. Further, as the detection unit, another element may be used as long as it can output data according to the temperature at the time of wire bond joining in the connection unit 35 as described above.

The sealing resin 33 is arranged so as to seal a part of the semiconductor element 2, the conductive wire 31, the temperature measuring element 4, and the lead frame 3. The outer peripheral portion of the lead frame 3 located on the outside of the sealing resin 33 is bent so as to extend in the direction along the side surface of the sealing resin 33.

<Inspection method and manufacturing method for semiconductor devices>
FIG. 4 is a flowchart for explaining the manufacturing method of the semiconductor device shown in FIG. FIG. 5 is a schematic diagram for explaining a method of manufacturing the semiconductor device shown in FIG. FIG. 6 is a schematic plan view of the member shown in FIG. FIG. 7 is a schematic diagram of a temperature measurement circuit used in the inspection process in the method for manufacturing the semiconductor device shown in FIG. 8 and 9 are schematic views for explaining an inspection process in the method for manufacturing the semiconductor device shown in FIG. 4. FIG. 10 is a graph showing a change in voltage detected by a temperature measurement circuit in an inspection process in the method of manufacturing a semiconductor device shown in FIG. FIG. 11 is a flowchart for explaining an example of an inspection process in the method for manufacturing the semiconductor device shown in FIG. The inspection method and the manufacturing method of the semiconductor device according to the present embodiment will be described with reference to FIGS. 4 to 11.

In the semiconductor device manufacturing method shown in FIG. 4, the preparation step (S1) is first carried out. This step (S1) is a step of preparing the member 100 to be the semiconductor device 1 including the temperature measuring element 4 shown in FIGS. 5 and 6. The member 100 shown in FIG. 5 is a member at a stage before sealing with the sealing resin 33 (see FIG. 1), and is a lead frame 3 and a semiconductor mounted on the surface of the lead frame 3. It mainly includes an element 2 and a temperature measuring element 4. In the semiconductor element 2, the bonding operation of connecting the lead frame 3 and the conductive wire 31 (see FIG. 1) has not yet been performed.

Next, the inspection step (S2) is carried out. In this step (S2), for example, the inspection step shown in FIG. 11 is carried out.

As shown in FIG. 11, in the inspection step, first, a step (S30) of bringing the probe 10 of the temperature measurement circuit 5 (see FIG. 7) into contact with the temperature measurement element 4 is carried out before the bonding operation. Specifically, as shown in FIG. 8, the probe 10 is brought into contact with each of the first electrode 12a (see FIG. 2) and the second electrode 12b (see FIG. 2) of the temperature measuring element 4.

Here, as shown in FIG. 7, the temperature measurement circuit 5 includes a constant current power supply 8, an ammeter 7, a voltmeter 9, a set of probes 10, and a connection wiring 6 for connecting these components. Mainly equipped with. One probe 10 is connected to the positive electrode of the constant current power supply 8 via the connection wiring 6. An ammeter 7 is connected to the negative electrode of the constant current power supply 8 via a connection wiring 6. The ammeter 7 is connected to another probe 10 by a connection wiring 6. The voltmeter 9 is arranged so as to connect the connection wiring 6 that connects the ammeter 7 and the other probe 10 and the connection wiring 6 that connects the positive electrode of the constant current power supply 8 and the one probe 10. .. That is, the constant current power supply 8 and the ammeter 7 are connected in series. The voltmeter 9 is connected in parallel with the temperature measuring element 4 via a set of probes 10. By carrying out the step (S30), a constant current can be applied to the temperature measuring element 4.

The temperature measurement circuit 5 shown in FIG. 7 is arranged in a wire bond device as an inspection device for the semiconductor device shown in FIG. The configuration of the wire bond device will be described later.

Next, the joining operation / friction heat generation step (S31) is carried out. In this step (S31), first, a constant current is supplied to the temperature measuring element 4 from the constant current power source 8 of the temperature measuring circuit 5. In this state, a constant voltage V1 is applied to the temperature measuring element 4 as shown in FIG. 10 based on the forward voltage characteristics of the temperature measuring element 4. The voltage applied to the temperature measuring element 4 can be measured by the voltmeter 9 of the temperature measuring circuit 5. Note that FIG. 10 is a graph showing a change in voltage in the temperature measuring element 4 in the inspection process. The horizontal axis of FIG. 10 shows time, and the vertical axis shows the voltage in the temperature measuring element 4. The state in which the voltage V1 is applied to the temperature measuring element 4 continues during the first period 18 which is the period until the joining operation starts.

Next, with the voltage V1 applied to the temperature measuring element 4 as described above, the test conductive wire 71 is wire-bonded to the connection portion 35 of the temperature measuring element 4 as shown in FIG. The conditions for wire bond bonding at this time are the same as the conditions for wire bond bonding of the conductive wire 31 to the semiconductor element 2. The test conductive wire 71 is pressed against the connection portion 35 by the bonding tool 17 of the wire bonding device and is subjected to vibration. The vibration amplitude of the bonding tool 17 at this time can be, for example, 1 μm or more and 100 μm or less, and the frequency of the vibration can be 10 kHz or more and 100 kHz or less.

By wire-bonding the test conductive wire 71 to the connection portion 35 in this way, the test conductive wire 71 is electrically connected to the connection portion 35 due to the stirring effect between the metals and frictional heat generation. In other words, at the time of wire bond joining, the contact interface between the ultrasonically vibrated test conductive wire 71 and the metal film 15 of the connection portion 35 generates heat by friction. The heat from the contact interface is transferred to the diode 13.

Here, in general, the forward voltage of the diode 13 has a characteristic that it drops as the temperature of the diode 13 rises. For example, the absolute value of the amount of decrease in the forward voltage of the diode 13 is proportional to the value of the temperature increase of the diode 13. Therefore, as shown in FIG. 10, when the wire bond bonding is started from the time point t1, the forward voltage of the diode 13, that is, the voltage in the temperature measuring element 4 decreases. During the second phase 19, which is the period during which the joining operation of the wire bond joining continues, the voltage continues to decrease. At the time point t2, which is the end time of the second period 19, the voltage in the temperature measuring element 4 is the voltage V2.

In the third period 20 after the time t2 when the wire bond bonding is completed, the temperature of the temperature measuring element 4 gradually decreases, so that the voltage in the temperature measuring element 4 gradually increases. At the time of wire bond joining described above, the voltage difference 21 which is the difference between the voltage V1 and the voltage V2 is measured by the temperature measuring circuit 5.

Next, the temperature measurement step (S32) is carried out. In this step (S32), the temperature of the contact interface between the test conductive wire 71 and the connecting portion 35 is calculated based on the characteristic data which is the relationship between the temperature of the diode 13 and the forward voltage measured in advance. Specifically, the temperature of the contact interface at the time of wire bond joining is calculated based on the voltage difference 21 described above and the characteristic data described above. In this way, the diode 13 as the detection unit detects the temperature at the connection unit 35 when the test conductive wire 71 is connected to the connection unit 35 by wire bond bonding. In the steps (S31) and (S32) as the steps for measuring the temperature, the diode 13 of the temperature measuring element 4 responds to the temperature at the connecting portion 35 while the test conductive wire 71 is wire-bonded to the connecting portion 35. Based on the output data (change in voltage characteristics of the diode 13), the temperature of the connection portion 35 (specifically, the temperature of the contact interface at the time of wire bond joining) is measured.

Here, since the thickness of the temperature measuring element 4 is, for example, 0.1 mm or more and 1.0 mm or less, and the thickness of the diode 13 is about several μm, the test conductive wire 71 and the metal film 15 of the connecting portion 35 The temperature of the contact interface (also called the junction interface) and the temperature of the diode 13 are almost the same. Therefore, as described above, the temperature of the contact interface can be directly measured based on the characteristic data of the diode 13. The above-mentioned step (S31) and step (S32) may be carried out as one continuous step or may be carried out as a separate step. The step (S31) and the step (S32) correspond to the step of measuring the temperature in the present embodiment.

Next, the bonding property determination step (S33) is carried out. In this step (S33), the temperature (measured temperature) obtained in the step (S32) is compared with the reference value. If the measured temperature is equal to or higher than the reference value, it is determined that the characteristics (bondability) of the joint portion between the test conductive wire 71 and the connection portion 35 are good. In this case, as shown in FIG. 11, it is determined that the process (S33) is OK, and the inspection process ends.

On the other hand, when the measured temperature is lower than the reference value, it is determined that the bondability is poor. In this case, the step (S33) is determined to be NG, and the step (S34) of changing the joining conditions is carried out. In the step (S34), the conditions for wire bond joining are changed so that the bondability is good. For example, the conditions are changed such that the vibration amplitude of the bonding tool 17 is increased, the vibration frequency is increased, or the pressure at which the bonding tool 17 presses the test conductive wire 71 is increased.

After changing the joining conditions in this way, the step (S31), the step (S32), and the step (S33) are repeated again. The repetition of the above-mentioned steps (S31 to S33) is continued until it is determined in the step (S33) that the bondability is good. In this way, the inspection step (S2) of FIG. 4 is carried out.

The determination in the step (S33) as described above is based on the finding that the higher the temperature of the contact interface between the conductive wire and the connecting portion 35 in the wire bond joining, the better the bondability of the joined portion. Further, the above-mentioned inspection step (S2) is preferably carried out on all the members 100, but as a sampling inspection, it may be carried out only on a certain ratio of the members 100 out of all the members 100.

Next, the processing step (S3) is carried out as shown in FIG. In this step (S3), the inspected member 100 is processed. Specifically, the semiconductor element 2, the lead frame 3, and the conductive wire 31 are wire-bonded together using the bonding conditions confirmed to be appropriate in the above-mentioned inspection step (S2). Further, the semiconductor element 2 and a part of the lead frame 3 are sealed with the sealing resin 33, and the lead frame 3 is cut and bent. In this way, the semiconductor device 1 shown in FIG. 1 can be obtained.

<Semiconductor device inspection device>
FIG. 12 is a block diagram for explaining a configuration of an inspection device for a semiconductor device according to the present embodiment. The inspection device shown in FIG. 12 is an inspection device used in the above-mentioned inspection step (S2), and is a wire bond device having an inspection mechanism.

The inspection device shown in FIG. 12 inspects the semiconductor device 1 including the temperature measuring element 4. The inspection device mainly includes a wire bond mechanism unit 43, an adjustment unit 42, and an inspection mechanism unit 28. The inspection mechanism unit 28 includes a feedback mechanism unit 41, a temperature measurement circuit 5, a storage unit 26, and a determination unit 25. The adjusting unit 42 adjusts the joining conditions of the wire bond joining, which is the process condition of the wire bond mechanism unit 43. As described above, the temperature measurement circuit 5 can be electrically connected to the temperature measurement element 4 of the member 100 that should be the semiconductor device 1. The storage unit 26 stores a reference value used for the inspection.

The determination unit 25 performs the calculation in the process (S32) in the inspection process shown in FIG. 11, the determination in the process (S33), and the change of the joining conditions in Taka Aichi (S34). Specifically, when the test conductive wire 71 is connected to the temperature measurement element 4 by wire bond bonding, the temperature at the connection portion 35 of the temperature measurement element 4 is detected by the temperature measurement circuit 5 in the forward direction. It is calculated based on the voltage difference 21 (see FIG. 10) and the characteristic data of the diode 13. Further, the determination unit 25 compares the temperature thus obtained (measured temperature) with the reference value stored in the storage unit 26, and determines whether or not the wire bond joining conditions are good or bad. When the determination result is NG, the determination unit 25 outputs a control signal instructing the adjusting unit 42 to change the joining conditions of the wire bond joining via the feedback mechanism unit 41.

The wire bond mechanism unit 43 includes a bonding tool 17 and the like, and actually performs wire bond bonding. The inspection mechanism unit 28 may be incorporated in the wire bond device, which is an inspection device, as a control board independent of the control unit of the wire bond device, or may be incorporated in the control unit of the wire bond device.

<Effect>
The semiconductor device 1 according to the present disclosure includes a semiconductor element 2, a conductive wire 31, and a temperature measuring element 4. The conductive wire 31 is connected to the semiconductor element 2. The temperature measuring element 4 includes a connecting unit 35 and a detecting unit. The detection unit is, for example, a diode 13. The connecting portion 35 can connect the same test conductive wire 71 as the conductive wire 31. The diode 13 as a detection unit detects the temperature at the connection unit 35 when the test conductive wire 71 is connected to the connection unit 35 by wire bond bonding.

By doing so, by wire-bonding the test conductive wire 71 to the connection portion 35 of the temperature measuring element 4, the temperature of the contact interface between the test conductive wire 71 and the connection portion 35 at the time of the wire bond joining is achieved. Can be measured directly. Here, as described above, the quality of the joining conditions of the wire bond joining correlates with the temperature of the contact interface. Therefore, it is possible to detect the occurrence of defects at the joint portion of the wire bond joint with high accuracy based on the measured temperature of the contact interface.

Further, based on the result of detecting the state of the joint portion of the wire bond joint described above with high accuracy, the quality of the joint condition of the wire bond joint can be accurately determined. Therefore, it is possible to improve the accuracy of controlling the reliability of the joint portion of the conductive wire. As a result, a semiconductor device having high reliability can be realized.

In the semiconductor device 1, the connection portion 35 of the temperature measuring element 4 includes an isolation insulating film 14 and a metal film 15. The isolation insulating film 14 is formed on the diode 13 as an example of the detection unit. The metal film 15 is formed on the isolation insulating film 14.

In this case, since the metal film 15 test conductive wire 71 is wire-bonded, the test conductive wire 71 can be wire-bonded in a state close to the wire-bonding conditions for the metal electrode of the semiconductor element 2. .. Therefore, it is possible to more accurately determine the quality of the wire bond bonding conditions for the electrodes of the semiconductor element 2.

In the semiconductor device 1, the detection unit includes a diode 13. The thickness T of the diode 13 is 10 μm or less. In this case, when the test conductive wire 71 is joined by wire bond, the thickness of the diode 13 located directly below the test conductive wire 71 is sufficiently small, so that the temperature of the contact interface between the test conductive wire 71 and the metal film 15 is adjusted. The temperature of the diode 13 is almost the same. Therefore, as described above, the temperature of the contact interface can be directly measured based on the characteristic data of the diode 13.

The method for inspecting a semiconductor device according to the present disclosure includes a step (S1) of preparing a member 100 to be a semiconductor device 1 including a temperature measuring element 4, and a step of measuring the temperature (S31, S32). The temperature measuring element 4 includes a connecting unit 35 and a detecting unit (diode 13). The connecting portion 35 can connect the test conductive wire 71. The detection unit detects the temperature at the connection unit 35 when the test conductive wire 71 is connected to the connection unit 35 by wire bond joining. In the steps of measuring the temperature (S31, S32), the temperature of the connecting portion 35 is based on the output data output by the detecting portion according to the temperature of the connecting portion 35 while the test conductive wire 71 is wire-bonded to the connecting portion 35. To measure.

In this way, the temperature of the contact interface between the test conductive wire 71 and the connecting portion 35 at the time of wire bond joining can be directly measured. As described above, since the quality of the wire bond bonding conditions correlates with the temperature of the contact interface, the occurrence of defects at the wire bond bonding joint is detected with high accuracy based on the measured temperature of the contact interface. be able to.

Further, based on the result of detecting the state of the joint portion of the wire bond joint described above with high accuracy, the quality of the joint condition of the wire bond joint can be accurately determined. As a result, it is possible to improve the accuracy of controlling the reliability of the joint portion of the conductive wire.

In the above-mentioned semiconductor device inspection method, the detection unit includes a diode 13. In the step of measuring the temperature (S31, S32), the change in the voltage characteristic of the diode 13 due to the temperature in the connection unit 35 is output from the detection unit as output data. In the step of measuring the temperature (S31, S32), the temperature at the connection portion 35 is measured based on the change in the voltage characteristic.

In this case, the temperature of the connecting portion 35 at the time of wire bond joining can be measured by utilizing the change in the voltage characteristic due to the temperature of the diode 13 constituting the temperature measuring element 4.

The method for manufacturing a semiconductor device according to the present disclosure includes a step of inspecting (S2) and a step of processing (S3). In the inspection step (S2), the member 100 to be a semiconductor device is inspected by using the above-mentioned semiconductor device inspection method. In the processing step (S3), the inspected member 100 is processed.

In this way, after confirming that the conditions for wire bond bonding are good, it is possible to perform processing such as wire bond bonding to the semiconductor element 2 on the member 100 to be a semiconductor device. Therefore, a highly reliable semiconductor device can be obtained.

The inspection device according to the present disclosure is an inspection device that inspects a semiconductor device including a temperature measuring element 4. The inspection device includes a wire bond mechanism unit 43, an adjustment unit 42, a temperature measurement circuit 5, a storage unit 26, and a determination unit 25. The adjusting unit 42 adjusts the process conditions of the wire bond mechanism unit 43. The temperature measurement circuit 5 can be electrically connected to the temperature measurement element 4. The storage unit 26 stores a reference value used for inspection of the semiconductor device 1. The determination unit 25 measures the temperature at the connection unit 35 to which the test conductive wire 71 is connected when the test conductive wire 71 is connected to the temperature measurement element 4 by wire bond bonding in the temperature measurement circuit 5. If so, the quality of the wire bond joining conditions is determined by comparing the reference value with the measured temperature.

In this way, the quality of the wire bond joining conditions carried out in the manufacturing process of the semiconductor device can be directly determined by the above-mentioned inspection device. Therefore, it is possible to detect the occurrence of defects at the joint portion of the wire bond joint with high accuracy.

Further, based on the result of detecting the state of the joint portion of the wire bond joint described above with high accuracy, the quality of the joint condition of the wire bond joint can be accurately determined. As a result, a highly reliable semiconductor device can be obtained by using the inspection device.

<Structure and action of modified examples>
FIG. 13 is a schematic cross-sectional view for explaining a modification of the semiconductor device according to the first embodiment. FIG. 13 corresponds to FIG. FIG. 13 shows a schematic cross-sectional view of the temperature measuring element 4 that constitutes a modified example of the semiconductor device.

The semiconductor device shown in FIG. 13 basically has the same configuration as the semiconductor device shown in FIGS. 1 to 3, but the structure of the temperature measuring element 4 is the same as that of the semiconductor device shown in FIGS. 1 to 3. It's different. That is, in the semiconductor device shown in FIG. 13, the connecting portion 35 of the temperature measuring element 4 includes an insulating film 51 formed on the diode 13 as a detecting portion. Specifically, the connection portion 35 of the temperature measuring element 4 shown in FIG. 13 has an isolation insulating film 14 formed on the diode 13 and an insulating film 51 formed on the isolation insulating film 14. include.

The semiconductor device inspection methods shown in FIGS. 1 to 3 can be applied to the semiconductor device having such a configuration, and the same effect can be obtained. Further, since the surface of the connecting portion 35 of the temperature measuring element 4 is formed of the insulating film 51, there is a possibility that the diode 13 of the connecting portion 35 and the test conductive wire 71 are electrically connected at the time of wire bond joining. Can be reduced. In the state where the diode 13 and the test conductive wire 71 are electrically connected in this way, the temperature measurement circuit 5 is electrically connected to the wire bond device via the diode 13 and the test conductive wire 71. become. In this case, the current supplied from the temperature measurement circuit 5 may flow to the ground via the wire bond device, which may make accurate inspection impossible. In the semiconductor device shown in FIG. 13, such a possibility can be reduced and an accurate inspection can be performed.

The thickness of the insulating film 51 is preferably 2 μm or less, for example. If the thickness of the insulating film 51 is reduced in this way, accurate inspection can be performed even if the same inspection method as that of the semiconductor device shown in FIGS. 1 to 3 is applied. In the case of inspecting the semiconductor device shown in FIG. 13, the friction coefficient between the test conductive wire 71 and the material (for example, metal) constituting the electrode of the semiconductor element 2 and the insulating film 51 are different. Therefore, the calorific value may be converted to calculate the temperature in consideration of the difference in the friction coefficient. For example, when the friction coefficient between the insulating film 51 and the test conductive wire 71 is 0.5, and the friction coefficient between the metal constituting the electrode of the semiconductor element 2 and the test conductive wire 71 is 0.8, these The temperature is calculated using a coefficient (0.8 / 0.5) indicating the relationship between the friction coefficients of.

Embodiment 2.
<Semiconductor device configuration>
FIG. 14 is a schematic cross-sectional view of the semiconductor device according to the second embodiment. The semiconductor device 1 shown in FIG. 14 basically has the same configuration as the semiconductor device 1 shown in FIGS. 1 to 3, but a test connecting wire 16 is connected to the temperature measuring element 4. .. The test connecting wire 16 extends from the temperature measuring element 4 to the side surface of the sealing resin 33.

<Inspection method and manufacturing method for semiconductor devices>
FIG. 15 is a schematic diagram for explaining a method of manufacturing the semiconductor device shown in FIG. FIG. 16 is a schematic diagram for explaining a method of manufacturing the semiconductor device shown in FIG. FIG. 15 corresponds to FIG. 6 and FIG. 16 corresponds to FIG. 15 and 16 show a member 100 to be the semiconductor device 1 shown in FIG.

The manufacturing method of the semiconductor device 1 shown in FIG. 14 is basically the same as the manufacturing method of the semiconductor device 1 shown in FIGS. 1 to 3, but the configuration of the member 100 and the contents of the inspection step (S2) are described. It's different. Specifically, in the member 100 to be the semiconductor device 1 shown in FIG. 14, an accessory member 55, which is a frame body, is connected to the lead frame 3 shown in FIG. The accessory member 55 is arranged so as to surround the outer circumference of the lead frame 3. The accessory member 55 is made of, for example, resin. The accessory member 55 and the lead frame 3 are adhered by insert molding. From a different point of view, the member 100 prepared in the preparation step (S1) in the manufacturing method of the semiconductor device 1 includes a lead frame 3 and an accessory member 55. A first terminal 22 and a second terminal 22 are formed on the accessory member 55. The first terminal 22 and the second terminal 22 may be arranged at arbitrary positions of the accessory member 55, but are preferably arranged at the portion of the accessory member 55 closest to the temperature measuring element 4.

In the inspection step (S2), the first electrode 12a (see FIG. 2) and the first terminal 22 of the diode 13 (see FIG. 2) included in the temperature measuring element 4 are connected to the test connecting wire 16 as shown in FIG. Is electrically connected by. The second electrode 12b (see FIG. 2) of the diode 13 and the second terminal 22 are electrically connected by a test connecting wire 16 as shown in FIG. The test connection wire 16 and the first electrode 12a, the second electrode 12b, the first terminal 22, and the second terminal 22 may be wire-bonded. The step of connecting the first electrode 12a and the first terminal 22 and the second electrode 12b and the second terminal 22 by the test connecting wire 16 is carried out, for example, in the step (S30) of FIG. May be good.

In the step of measuring the temperature (S32), the first terminal 22 and the second terminal 22 are connected to the temperature measurement circuit 5. Specifically, as shown in FIG. 16, the probe 10 of the temperature measurement circuit 5 is connected to each of the first terminal 22 and the second terminal 22. In this state, the step (S31) and the step (S32) are carried out. That is, the temperature at the connection portion 35 is measured by measuring the change in the voltage characteristic of the diode 13 as output data in the temperature measurement circuit 5. Instead of the probe 10 of the temperature measurement circuit 5 described above, a conductive member such as a clip that can be easily connected may be used.

After that, the step (S33), the step (S34), and the like shown in FIG. 11 are carried out. In this way, the inspection step (S2) is carried out.

Further, the processing step (S3) shown in FIG. 4 is carried out. At this time, the semiconductor element 2 and the like are sealed with the sealing resin 33 without removing the test connecting wire 16 described above, and then the test connecting wire 16 located outside the sealing resin 33 is cut. This is the configuration of the semiconductor device 1 shown in 1. The test connection wire 16 may be removed before sealing with the sealing resin 33.

<Effect>
In the above-mentioned semiconductor device inspection method, in the preparation step (S1), the member 100 to be a semiconductor device includes a lead frame 3 and an accessory member 55. The accessory member 55 is connected to the lead frame 3. The accessory member 55 includes a first terminal 22 and a second terminal 22. The diode 13 includes a first electrode 12a and a second electrode 12b. The first electrode 12a and the first terminal 22 are electrically connected. The second electrode 12b and the second terminal 22 are electrically connected. In the step of measuring the temperature (S32), in the state where the first terminal 22 and the second terminal 22 are connected to the temperature measurement circuit 5, the change in the voltage characteristic of the diode 13 is measured as output data in the temperature measurement circuit 5. By doing so, the temperature at the connection portion 35 is measured.

In this case, similarly to the first embodiment, the temperature of the contact interface between the test conductive wire 71 and the connecting portion 35 at the time of wire bond joining in the step (S31) can be directly measured. Therefore, it is possible to detect the occurrence of defects at the joint portion of the wire bond joint with high accuracy based on the measured temperature of the contact interface.

Further, in the above-described method, the temperature of the semiconductor device 1 having a structure of wiring by insert molding is measured by using the first terminal 22 and the second terminal 22 arranged on the accessory member 55 located outside the lead frame 3. The element 4 and the temperature measurement circuit 5 can be connected. By wire-bonding the test conductive wire 71 to the temperature measuring element 4 in this state, the temperature of the contact interface at the time of wire-bonding can be easily measured.

In the above semiconductor device inspection method, the lead frame 3 and the accessory member 55 are connected by insert molding. In this case, the lead frame 3 and the accessory member 55 can be easily joined. The lead frame 3 and the accessory member 55 may be connected via a connecting member such as an adhesive.

Embodiment 3.
<Semiconductor device configuration>
FIG. 17 is a schematic cross-sectional view of the semiconductor device according to the third embodiment. The semiconductor device 1 shown in FIG. 17 basically has the same configuration as the semiconductor device 1 shown in FIGS. 1 to 3, but a temperature measurement connector is used as the temperature measurement element 4. The temperature measuring element 4 which is a temperature measuring connector is connected to the lead frame 3 by insert molding. The temperature measuring element 4 in the semiconductor device 1 shown in FIG. 17 includes a large number of terminals on its end face. The terminal includes a terminal having the functions of the first electrode 12a and the second electrode 12b of the temperature measuring element 4 shown in FIG. A diode 13 (see FIG. 2) as a detection unit is formed on the upper surface of the temperature measuring element 4 shown in FIG. A connection portion 35 is formed on the surface of the diode 13 in the same manner as the structure shown in FIG. The test conductive wire 71 may remain on the upper surface of the temperature measuring element 4.

<Inspection method and manufacturing method for semiconductor devices>
FIG. 18 is a schematic diagram for explaining a method of manufacturing the semiconductor device shown in FIG. FIG. 18 corresponds to FIG. FIG. 18 shows a member 100 to be the semiconductor device 1 shown in FIG.

The manufacturing method of the semiconductor device 1 shown in FIG. 17 is basically the same as the manufacturing method of the semiconductor device 1 shown in FIGS. 1 to 3, but the configuration of the member 100 and the contents of the inspection step (S2) are described. It's different. Specifically, in the member 100 to be the semiconductor device 1 shown in FIG. 17, a temperature measuring element 4 which is a temperature measuring connector is connected to the lead frame 3 shown in FIG. 6 by insert molding. From a different point of view, the member 100 prepared in the preparation step (S1) in the manufacturing method of the semiconductor device 1 includes the lead frame 3. The temperature measuring element 4 is connected to the lead frame 3 by insert molding. The temperature measuring element 4 includes a first terminal and a second terminal arranged on the end face.

In the inspection step (S2), the terminal of the temperature measuring element 4 and the temperature measuring circuit 5 are connected by the conductive wire 75. In this state, the step (S31) and the step (S32) shown in FIG. 11 are carried out. Specifically, the temperature is measured by measuring the change in the voltage characteristic of the diode 13 as output data in the temperature measurement circuit 5 while wire-bonding the test conductive wire 71 onto the diode 13 of the temperature measurement element 4. The temperature of the wire-bonded portion of the measuring element 4 is measured.

After that, the step (S33), the step (S34), and the like shown in FIG. 11 are carried out. In this way, the inspection step (S2) is carried out.

Further, the processing step (S3) shown in FIG. 4 is carried out. As a result, the semiconductor device 1 shown in FIG. 17 can be obtained.

<Effect>
In the above-mentioned semiconductor device inspection method, in the preparation step (S1), the member 100 to be the semiconductor device includes the lead frame 3. The temperature measuring element 4 is connected to the lead frame 3 by insert molding. The temperature measuring element 4 includes a first terminal and a second terminal arranged on the end face. In the steps of measuring the temperature (S31, S32), the voltage characteristics of the diode 13 in the temperature measuring circuit 5 in a state where the temperature measuring element 4 is connected to the temperature measuring circuit 5 via the first terminal and the second terminal. The temperature at the connection portion 35 is measured by measuring the change in the output data.

In this case, similarly to the first embodiment, the temperature of the contact interface between the test conductive wire 71 and the temperature measuring element 4 at the time of wire bond joining in the step (S31) can be directly measured. Therefore, it is possible to detect the occurrence of defects at the joint portion of the wire bond joint with high accuracy based on the measured temperature of the contact interface.

Embodiment 4.
<Semiconductor device configuration>
FIG. 19 is a schematic cross-sectional view of the semiconductor device according to the fourth embodiment. The semiconductor device 1 shown in FIG. 19 basically has the same configuration as the semiconductor device 1 shown in FIGS. 1 to 3, but the semiconductor device 1 includes a printed substrate 24 and has a temperature on the printed substrate 24. The semiconductor devices shown in FIGS. 1 to 3 are characterized in that the measuring element 4, the first terminal 22, and the second terminal 22 are mounted, and that the temperature measuring element 4 includes a plurality of measuring elements 4a. It's different. Specifically, in the semiconductor device 1 shown in FIG. 19, the printed circuit board 24 is fixed on the lead frame 3 via the connecting member 32. As the connecting member 32, for example, solder, a metal such as silver, a resin, or the like can be used. As the printed circuit board 24, for example, a resin substrate, a ceramics substrate, an aluminum substrate, or the like can be used.

The temperature measuring element 4 is fixed to the upper surface of the printed circuit board 24 via a joining member (not shown). The temperature measuring element 4 may be arranged at any position on the upper surface of the printed circuit board 24. A semiconductor element 2 is fixed to the upper surface of the printed circuit board 24 via a joining member (not shown). The semiconductor element 2 may be fixed on the lead frame 3. A first terminal 22 and a second terminal 22 are arranged on the upper surface of the printed circuit board 24. The temperature measuring element 4 is connected to the first terminal 22 and the second terminal 22 by a test connecting wire 16. The configuration of the measuring element 4a as the temperature measuring element 4 is the same as the configuration of the temperature measuring element 4 shown in FIG. Therefore, the first electrode 12a and the second electrode 12b of the measuring element 4a are connected to the first terminal 22 and the second terminal 22 by the test connecting wire 16, respectively.

The test conductive wire 71 may remain on the upper surface of the temperature measuring element 4. Further, the test connecting wire 16 may be removed before being sealed by the sealing resin 33.

The printed circuit board 24 is arranged at a distance from a part of the lead frame 3 which is an external terminal. This is to prevent a short circuit between the temperature measuring element 4 on the printed circuit board 24 and the portion serving as the external terminal of the lead frame 3 when a current is passed through the semiconductor device 1.

<Inspection method and manufacturing method for semiconductor devices>
20 and 21 are schematic views for explaining the manufacturing method of the semiconductor device shown in FIG. FIG. 20 is a schematic plan view of a printed circuit board 24 mounted on a lead frame 3 constituting a semiconductor device. FIG. 21 is a schematic view showing a state in which the temperature measuring element 4 is connected to the first terminal 22 and the second terminal 22 by the test connecting wire 16 in the printed circuit board 24 shown in FIG. 20. In FIGS. 20 and 21, only one temperature measuring element 4 is displayed for simplicity of explanation, but as shown in FIG. 19, a plurality of measuring elements 4a are printed as the temperature measuring element 4. It is mounted on the board 24.

The manufacturing method of the semiconductor device 1 shown in FIG. 19 is basically the same as the manufacturing method of the semiconductor device 1 shown in FIGS. 1 to 3, but the configuration of the member 100 and the contents of the inspection step (S2) are described. It's different. Specifically, in the member to be the semiconductor device 1 shown in FIG. 19, the printed circuit board 24 is fixed to the lead frame 3 by a joining member. At least the temperature measuring element 4, the first terminal 22, and the second terminal 22 are arranged on the surface of the printed circuit board 24. From a different point of view, the members prepared in the preparation step (S1) in the manufacturing method of the semiconductor device 1 include the lead frame 3 and the printed circuit board 24. The temperature measuring element 4 is arranged on the printed circuit board 24. The temperature measuring element 4 includes a plurality of measuring elements 4a arranged on the printed circuit board 24. A first terminal 22 and a second terminal 22 are formed on the printed circuit board 24. The first terminal 22 and the second terminal 22 may be arranged at arbitrary positions on the printed circuit board 24, but may be placed on the printed circuit board 24 in a region closer to the temperature measuring element 4 than the other semiconductor element 2. It is preferable to be arranged. Alternatively, it is preferable that no other semiconductor element 2 is arranged between the temperature measuring element 4 and the first terminal 22 and the second terminal 22.

In the inspection step (S2), the first electrode 12a (see FIG. 2) and the first terminal 22 of the diode 13 (see FIG. 2) included in the temperature measuring element 4 are connected to the test connecting wire 16 as shown in FIG. Is electrically connected by. The second electrode 12b (see FIG. 2) of the diode 13 and the second terminal 22 are electrically connected by a test connecting wire 16 as shown in FIG. The test connection wire 16 and the first electrode 12a, the second electrode 12b, the first terminal 22, and the second terminal 22 may be wire-bonded. The step of connecting the first electrode 12a and the first terminal 22 and the second electrode 12b and the second terminal 22 by the test connecting wire 16 is carried out, for example, in the step (S30) of FIG. May be good.

In the step of measuring the temperature (S32), the first terminal 22 and the second terminal 22 are connected to the temperature measurement circuit 5. Specifically, as shown in FIG. 21, the probe 10 of the temperature measurement circuit 5 is connected to each of the first terminal 22 and the second terminal 22. In this state, the step (S31) and the step (S32) are carried out. That is, the temperature at the connection portion 35 is measured by measuring the change in the voltage characteristic of the diode 13 as output data in the temperature measurement circuit 5.

After that, the step (S33), the step (S34), and the like shown in FIG. 11 are carried out. In this way, the inspection step (S2) is carried out.

Further, the processing step (S3) shown in FIG. 4 is carried out. At this time, if the semiconductor element 2 or the like is sealed with the sealing resin 33 without removing the test connection wire 16 described above, the semiconductor device 1 shown in FIG. 19 is configured. The test connection wire 16 may be removed before sealing with the sealing resin 33.

<Effect>
The semiconductor device 1 further includes a printed circuit board 24. The temperature measuring element 4 is arranged on the printed circuit board 24. In this case, the inspection method according to the present embodiment can be applied to the semiconductor device using the printed circuit board 24. Therefore, even in the semiconductor device using the printed circuit board 24, it is possible to improve the management accuracy of the reliability of the joint portion of the conductive wire 31 in the semiconductor element 2.

In the above-mentioned semiconductor device inspection method, the temperature measuring element 4 includes a plurality of measuring elements 4a. In this case, by having a plurality of measuring elements 4a, the inspection method according to the present embodiment can be carried out a plurality of times.

In the above-mentioned semiconductor device inspection method, in the preparation step (S1), the member 100 to be a semiconductor device further includes a printed circuit board 24. The temperature measuring element 4 is arranged on the printed circuit board 24.

In this case, similarly to the first embodiment, the temperature of the contact interface between the test conductive wire 71 and the connecting portion 35 at the time of wire bond joining in the step (S31) can be directly measured. Therefore, it is possible to detect the occurrence of defects at the joint portion of the wire bond joint with high accuracy based on the measured temperature of the contact interface.

Further, in the above-described method, with respect to the semiconductor device 1 provided with the printed circuit board 24, the temperature measuring element 4 and the temperature measuring circuit 5 are used by using the first terminal 22 and the second terminal 22 arranged on the printed circuit board 24. Can be connected to. By wire-bonding the test conductive wire 71 to the temperature measuring element 4 in this state, the temperature of the contact interface at the time of wire-bonding can be easily measured.

<Structure and action of modified examples>
FIG. 22 is a schematic cross-sectional view showing a first modification of the semiconductor device according to the fourth embodiment. The semiconductor device 1 shown in FIG. 22 basically has the same configuration as the semiconductor device 1 shown in FIG. 19, but a mounting connector is used as the temperature measuring element 4. The temperature measuring element 4 which is a mounting connector may be connected to, for example, the printed circuit board 24 by insert molding. The temperature measuring element 4 in the semiconductor device 1 shown in FIG. 22 has a connector (not shown) that can be connected to the temperature measuring circuit 5. The connector has the functions of the first electrode 12a and the second electrode 12b of the temperature measuring element 4 shown in FIG. A diode 13 (see FIG. 2) as a detection unit is formed on the upper surface of the temperature measuring element 4 shown in FIG. 22. A connection portion 35 is formed on the surface of the diode 13 in the same manner as the structure shown in FIG. The test conductive wire 71 may remain on the upper surface of the temperature measuring element 4. Further, a plurality of temperature measuring elements 4 may be arranged on the printed circuit board 24.

The manufacturing method of the semiconductor device 1 shown in FIG. 22 is basically the same as the manufacturing method of the semiconductor device 1 shown in FIG. 19, but the configuration of the member 100 and the contents of the inspection step (S2) are different. .. Specifically, in the member 100 to be the semiconductor device 1 shown in FIG. 22, the temperature measuring element 4 which is a mounting connector is connected to the printed circuit board 24 of the semiconductor device 1 shown in FIG. 19 by insert molding. From a different point of view, the member 100 prepared in the preparation step (S1) in the manufacturing method of the semiconductor device 1 includes the printed circuit board 24 and the lead frame 3. The temperature measuring element 4 is connected to the printed circuit board 24 by insert molding. The temperature measuring element 4 includes a connector that can be connected to the temperature measuring circuit 5.

In the inspection step (S2), the connector of the temperature measuring element 4 and the temperature measuring circuit 5 are electrically connected. In this state, the step (S31) and the step (S32) shown in FIG. 11 are carried out. Specifically, the temperature is measured by measuring the change in the voltage characteristic of the diode 13 as output data in the temperature measurement circuit 5 while wire-bonding the test conductive wire 71 onto the diode 13 of the temperature measurement element 4. The temperature of the wire-bonded portion of the measuring element 4 is measured.

After that, the step (S33), the step (S34), and the like shown in FIG. 11 are carried out. In this way, the inspection step (S2) is carried out. Further, the processing step (S3) shown in FIG. 4 is carried out. As a result, the semiconductor device 1 shown in FIG. 22 can be obtained.

The semiconductor device 1 having the configuration shown in FIG. 22 and the manufacturing method and inspection method of the semiconductor device 1 also have the same effects as the manufacturing method and inspection method of the semiconductor device 1 and the semiconductor device 1 shown in FIG. Can be done.

FIG. 23 is a schematic cross-sectional view showing a second modification of the semiconductor device according to the fourth embodiment. The semiconductor device 1 shown in FIG. 23 basically has the same configuration as the semiconductor device 1 shown in FIG. 19, but the temperature measuring elements 4 are arranged on a plurality of printed circuit boards 24 having three or more. There is. The test conductive wire 71 may remain on the upper surface of the temperature measuring element 4. Although not shown, a first terminal 22 and a second terminal 22 (see FIG. 21) are formed on the printed circuit board 24.

The manufacturing method of the semiconductor device 1 shown in FIG. 23 is basically the same as the manufacturing method of the semiconductor device 1 shown in FIG. 19, but the configuration of the member 100 is different. Specifically, in the member 100 to be the semiconductor device 1 shown in FIG. 23, three or more (for example, four) temperature measuring elements 4 are fixed on the printed circuit board 24 of the semiconductor device 1 shown in FIG. ing. From a different point of view, the member 100 prepared in the preparation step (S1) in the manufacturing method of the semiconductor device 1 includes the printed circuit board 24 and three or more temperature measuring elements 4. The plurality of temperature measuring elements 4 are fixed to the printed circuit board 24.

After that, the inspection step (S2) and the processing step (S3) shown in FIG. 4 are carried out in the same manner as the manufacturing method of the semiconductor device 1 shown in FIG. As a result, the semiconductor device 1 shown in FIG. 23 can be obtained.

The semiconductor device 1 having the configuration shown in FIG. 23 and the manufacturing method and inspection method of the semiconductor device 1 also have the same effects as the manufacturing method and inspection method of the semiconductor device 1 and the semiconductor device 1 shown in FIG. Can be done. Further, in the semiconductor device 1 shown in FIG. 23, it is possible to measure the temperature of a large number of wire bond joints at one time. Therefore, the number of inspections can be increased to improve the measurement accuracy.

FIG. 24 is a schematic cross-sectional view showing a third modification of the semiconductor device according to the fourth embodiment. The semiconductor device 1 shown in FIG. 24 basically has the same configuration as the semiconductor device 1 shown in FIG. 19, but a temperature measurement circuit 5 and a storage unit 62 are formed on the printed circuit board 24. .. The test conductive wire 71 may remain on the upper surface of the temperature measuring element 4 fixed on the printed circuit board 24.

The manufacturing method of the semiconductor device 1 shown in FIG. 24 is basically the same as the manufacturing method of the semiconductor device 1 shown in FIG. 19, but the configuration of the member 100 and the contents of the inspection step (S2) are different. .. Specifically, in the member 100 to be the semiconductor device 1 shown in FIG. 24, the temperature measurement circuit 5 and the storage unit 62 are mounted on the printed circuit board 24 of the semiconductor device 1 shown in FIG. The temperature measurement circuit 5 has, for example, the circuit configuration shown in FIG. The storage unit 62 has the same function as the storage unit 26 in the inspection device shown in FIG. From a different point of view, the member 100 prepared in the preparation step (S1) in the manufacturing method of the semiconductor device 1 includes the printed circuit board 24. The diode 13, which is a detection unit included in the temperature measuring element 4, includes a first electrode 12a (see FIG. 2) and a second electrode 12b (see FIG. 2). The temperature measuring element 4 is arranged on the printed circuit board 24. A temperature measurement circuit 5 and a storage unit 62 are formed on the printed circuit board 24. The temperature measuring element 4 is electrically connected to the temperature measuring circuit 5.

In the inspection step (S2), power is supplied to the printed circuit board 24 in a state where the connector of the temperature measuring element 4 and the temperature measuring circuit 5 are electrically connected, and the step (S31) and the step shown in FIG. The step (S32) is carried out. Specifically, the temperature is measured by measuring the change in the voltage characteristic of the diode 13 as output data in the temperature measurement circuit 5 while wire-bonding the test conductive wire 71 onto the diode 13 of the temperature measurement element 4. The temperature of the wire-bonded portion of the measuring element 4 is measured.

After that, the step (S33), the step (S34), and the like shown in FIG. 11 are carried out. In this way, the inspection step (S2) is carried out. From a different point of view, in the step of measuring the temperature (S31, S32), the temperature measurement circuit is in a state where the first electrode 12a and the second electrode 12b of the temperature measurement element 4 are connected to the temperature measurement circuit 5. By measuring the change in the voltage characteristic of the diode 13 as output data in No. 5, the temperature at the connection portion 35 of the temperature measuring element 4 is measured. In the determination step (S33), the quality of the wire bond joining conditions is determined by comparing the reference value stored in the storage unit 62 with the measured temperature.

After that, the processing step (S3) shown in FIG. 4 is carried out. As a result, the semiconductor device 1 shown in FIG. 24 can be obtained.

The semiconductor device 1 having the configuration shown in FIG. 24 and the manufacturing method and inspection method of the semiconductor device 1 also have the same effects as the manufacturing method and inspection method of the semiconductor device 1 and the semiconductor device 1 shown in FIG. Can be done. Further, the inspection step shown in FIG. 11 can be carried out only by supplying electric power to the printed circuit board 24 from the outside as described above. Further, the inspection result may be stored in the storage unit 62.

It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. As long as there is no contradiction, at least two of the embodiments disclosed this time may be combined. The basic scope of the present disclosure is shown by the scope of claims rather than the above description, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

1 Semiconductor device, 2 Semiconductor element, 3 Lead frame, 4 Temperature measurement element, 4a measurement element, 5 Temperature measurement circuit, 6 Connection wiring, 7 Current meter, 8 Constant current power supply, 9 Voltage meter, 10 probe, 11 Silicon substrate, 12a 1st electrode, 12b 2nd electrode, 13 diode, 14 isolation insulating film, 15 metal film, 16 test connection wire, 17 bonding tool, 18 1st period, 19 2nd period, 20 3rd period, 21 Voltage difference, 22 1st and 2nd terminals, 24 printed board, 25 judgment part, 26,62 storage part, 28 inspection mechanism part, 31,75 conductive wire, 32 connection member, 33 sealing resin, 35 connection part , 41 Feedback mechanism, 42 Adjustment, 43 Wire bond mechanism, 51 Insulation film, 55 Auxiliary member, 71 Conductive wire for test, 100 member.

Claims (15)

With semiconductor elements
The conductive wire connected to the semiconductor element and
Equipped with a temperature measurement element
The temperature measuring element is in a connection portion to which the same test conductive wire as the conductive wire can be connected, and in the connection portion when the test conductive wire is connected to the connection portion by wire bond joining. A semiconductor device including a detector for detecting temperature. The connection portion of the temperature measuring element is
The isolation insulating film formed on the detection unit and
The semiconductor device according to claim 1, further comprising a metal film formed on the isolation insulating film. The semiconductor device according to claim 1, wherein the connection portion of the temperature measuring element includes an insulating film formed on the detection portion. The detector includes a diode and
The semiconductor device according to any one of claims 1 to 3, wherein the thickness of the diode is 10 μm or less. With more printed circuit boards
The semiconductor device according to any one of claims 1 to 4, wherein the temperature measuring element is arranged on the printed circuit board. The temperature measuring element includes a step of preparing a member to be a semiconductor device including a temperature measuring element, and the temperature measuring element includes a connecting portion to which a test conductive wire can be connected, and the test conductive portion to the connecting portion. It includes a detector that detects the temperature at the connection when the wires are connected by wire bond joining, and further.
The step includes a step of measuring the temperature of the connection portion based on output data output by the detection unit according to the temperature of the connection portion while wire-bonding the test conductive wire to the connection portion. Inspection method for semiconductor devices. The detector includes a diode and
In the step of measuring the temperature, the change in the voltage characteristic of the diode due to the temperature in the connection portion is output from the detection unit as the output data, and the temperature in the connection portion is measured based on the change in the voltage characteristic. The method for inspecting a semiconductor device according to claim 6. In the preparation step, the member includes a lead frame and an accessory member connected to the lead frame.
The accessory member includes a first terminal and a second terminal.
The diode includes a first electrode and a second electrode.
The first electrode and the first terminal are electrically connected to each other.
The second electrode and the second terminal are electrically connected to each other.
In the step of measuring the temperature, the change in the voltage characteristic of the diode is measured as the output data in the temperature measurement circuit in a state where the first terminal and the second terminal are connected to the temperature measurement circuit. The method for inspecting a semiconductor device according to claim 7, wherein the temperature at the connection portion is measured accordingly. The method for inspecting a semiconductor device according to claim 8, wherein the lead frame and the accessory member are connected by insert molding. In the preparation step, the member further includes a lead frame.
The method for inspecting a semiconductor device according to claim 7, wherein the temperature measuring element is connected to the lead frame by insert molding. The method for inspecting a semiconductor device according to any one of claims 6 to 10, wherein the temperature measuring element includes a plurality of measuring elements. In the preparation step, the member includes a printed circuit board.
The method for inspecting a semiconductor device according to any one of claims 6 to 11, wherein the temperature measuring element is arranged on the printed circuit board. In the preparation step, the member includes a printed circuit board.
The diode includes a first electrode and a second electrode.
The temperature measuring element is arranged on the printed circuit board, and the temperature measuring element is arranged on the printed circuit board.
A temperature measurement circuit and a storage unit are formed on the printed circuit board.
In the step of measuring the temperature, the change in the voltage characteristic of the diode is measured as the output data in the temperature measurement circuit in a state where the first electrode and the second electrode are connected to the temperature measurement circuit. By measuring the temperature at the connection portion,
The method for inspecting a semiconductor device according to claim 7, further comprising a step of comparing the reference value stored in the storage unit with the measured temperature to determine the quality of the wire bond bonding conditions. A step of inspecting the member by using the inspection method of the semiconductor device according to claim 6.
A method for manufacturing a semiconductor device, comprising a step of processing the inspected member. An inspection device that inspects semiconductor devices that include temperature measurement elements.
Wire bond mechanism and
An adjustment unit that adjusts the process conditions of the wire bond mechanism unit,
A temperature measurement circuit that can be electrically connected to the temperature measurement element,
A storage unit that stores reference values used for inspection of the semiconductor device, and
In the temperature measurement circuit, when the temperature at the connection portion to which the test conductive wire is connected when the test conductive wire is connected to the temperature measuring element by wire bond bonding, the reference value is measured. An inspection device including a determination unit for determining whether or not the wire bond joining conditions are good or bad by comparing the measured temperature with the measured temperature.

Images