JP2021107807A5 - - Google Patents
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- JP2021107807A5 JP2021107807A5 JP2020194644A JP2020194644A JP2021107807A5 JP 2021107807 A5 JP2021107807 A5 JP 2021107807A5 JP 2020194644 A JP2020194644 A JP 2020194644A JP 2020194644 A JP2020194644 A JP 2020194644A JP 2021107807 A5 JP2021107807 A5 JP 2021107807A5
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- 239000002245 particle Substances 0.000 claims description 40
- 238000007689 inspection Methods 0.000 claims description 27
- 238000005259 measurement Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims 24
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Description
上述の荷電粒子ビーム検査装置において、荷電粒子ビームで照射可能な測定用画素サイズをPS、第2の方向又は第2の方向の逆方向における第2ビーム整定時間Ofs_vを含む、第2の方向又は第2の方向の逆方向のビームスキャン時間をTvとしたときに、ステージの移動速度VはV=PSN/(2Tv)であることが好ましい。 In the above-mentioned charged particle beam inspection apparatus, the measurement pixel size that can be irradiated with the charged particle beam is defined as PS, the second direction or the second direction including the second beam settling time Ofs_v in the second direction or the opposite direction of the second direction. Preferably, the moving speed V of the stage is V=PS N /(2Tv), where Tv is the beam scanning time in the opposite direction to the second direction.
y方向又は-y方向における第2ビーム整定時間Ofs_vを含む、y方向又は-y方向のビームスキャン時間をTvとしたときに、XYステージ105の移動速度VはV=PSN/(2Tv)である。これは、以下のようにして導かれる。まず、1本のビームが担当するグリッド29の面積は、(p/M)×pである。この(p/M)×pであるグリッド29におけるビームスキャンが開始されてから完了するまでにXYステージ105が移動する距離は、段落0035に記載したとおりN/M・pである。次に、測定用画素28のx方向及びy方向におけるサイズをPSとして、y方向のビームスキャンに必要な時間をTvとする。この場合、y方向のスキャン時間は(p/(M×PS))×Tvで求められる。すると、図9及び図10にて示したように、y方向において極性を変えて(y方向及び-y方向)2回スキャンを行うため、((p/(M×PS))×Tv×2)×V=N/M・pという式が成立する。よって、V=PSN/(2Tv))である。なお、上述のXYステージ105の移動速度Vは、例えば、移動速度計算回路146により計算される。 When the beam scanning time in the y direction or -y direction including the second beam settling time Ofs_v in the y direction or -y direction is Tv, the moving speed V of the XY stage 105 is V=PS N /(2Tv). be. This is derived as follows. First, the area of the grid 29 covered by one beam is (p/M)×p. The distance that the XY stage 105 moves from the start to the completion of the beam scan in the grid 29, which is (p/M)×p, is N/M·p as described in paragraph 0035 . Next, let PS be the size of the measurement pixel 28 in the x direction and the y direction, and let Tv be the time required for beam scanning in the y direction. In this case, the scan time in the y direction is determined by (p/(M×PS))×Tv. Then, as shown in FIGS. 9 and 10, since scanning is performed twice with changing polarity in the y direction (y direction and -y direction), ((p/(M×PS))×Tv×2 )×V= N/M·p holds true. Therefore, V=PS N /(2Tv)). Note that the above-mentioned moving speed V of the XY stage 105 is calculated by, for example, the moving speed calculation circuit 146.
x方向又は-x方向における第1ビーム整定時間Ofs_hを含む、x方向又は-x方向のビームスキャン時間をTh、y方向又は-y方向における第2ビーム整定時間Ofs_vを含む、y方向又は-y方向のビームスキャン時間をTvとしたときに、XYステージ105の移動速度VはV=PSN/(2×(M×Th+Tv))である。これは、以下のようにして導かれる。まず、1本のビームが担当するグリッド29の面積は、(p/M)×pである。この(p/M)×pであるグリッド29におけるビームスキャンが開始されてから完了するまでにXYステージ105が移動する距離は、段落0035に記載したとおりN/M・pである。次に、測定用画素28のx方向及びy方向におけるサイズをPSとして、x方向のビームスキャンに必要な時間をTh、y方向のビームスキャンに必要な時間をTvとする。この場合、x方向のスキャン時間は(p/PS)×Thで求められる。また、y方向のスキャン時間は(p/(M×PS))×Tvで求められる。すると、図11ないし図14にて示したように、x方向において極性を変えて(x方向及び-x方向)2回スキャンを行い、y方向において極性を変えて(y方向及び-y方向)2回スキャンを行うため、((p/(M×PS))×Tv×2+(p/PS)×Th×2)×V=N/M・pという式が成立する。よって、V=PSN/(2×(M×Th+Tv))である。なお、上述のXYステージ105の移動速度Vは、例えば、移動速度計算回路146により計算される。 Beam scanning time in the x direction or -x direction, including the first beam settling time Ofs_h in the x direction or -x direction, Th, including the second beam settling time Ofs_v in the y direction or -y direction, in the y direction or -y When the beam scanning time in the direction is Tv, the moving speed V of the XY stage 105 is V=PS N /(2×(M×Th+Tv)). This is derived as follows. First, the area of the grid 29 covered by one beam is (p/M)×p. The distance that the XY stage 105 moves from the start to the completion of the beam scan in the grid 29, which is (p/M)×p, is N/M·p as described in paragraph 0035 . Next, the size of the measurement pixel 28 in the x and y directions is set as PS, the time required for beam scanning in the x direction is Th, and the time required for beam scanning in the y direction is set as Tv. In this case, the scan time in the x direction is determined by (p/PS)×Th. Further, the scan time in the y direction is determined by (p/(M×PS))×Tv. Then, as shown in FIGS. 11 to 14, scanning is performed twice by changing the polarity in the x direction (x direction and -x direction), and by changing the polarity in the y direction (y direction and -y direction). Since scanning is performed twice, the formula ((p/(M×PS))×Tv×2+(p/PS)×Th×2)×V= N/M·p holds true. Therefore, V=PS N /(2×(M×Th+Tv)). Note that the above-mentioned moving speed V of the XY stage 105 is calculated by, for example, the moving speed calculating circuit 146.
Claims (20)
前記ステージを第1の方向の逆方向に連続移動させるステージ制御回路と、
前記第1の方向に前記基板面上において同一ピッチpでN列(Nは2以上の整数)かつ前記第1の方向と直交する第2の方向にN’列(N’は1以上の整数)並ぶ複数の荷電粒子ビームによって構成されるマルチビームを用いて、前記基板の検査領域が前記第1の方向にp/M(Mは2以上の整数)で得られるサイズかつ前記第2の方向に所定のサイズで分割された複数の小領域のうち、前記第1の方向に前記ピッチpでN個かつ前記第2の方向にN’個並ぶ前記基板上のN×N’個の小領域群に前記マルチビームを一括して偏向して、前記ステージが前記第1の方向の逆方向にN/M・pで得られる距離を連続移動する間、前記ステージの連続移動に追従するように前記マルチビームをトラッキング偏向すると共に、前記第1の方向の逆方向に前記N/M・pで得られる距離の前記ステージの移動が完了するまでに、前記N×N’個の小領域群から前記第1の方向にN個離れた、前記第1の方向に前記ピッチpで並ぶ新たなN×N’個の小領域群に前記マルチビームを一括して偏向し直すことでトラッキングリセットを行う第1の機能と、
前記ステージの連続移動に追従するように前記マルチビームがトラッキング偏向されている間に、前記マルチビームのそれぞれを、前記複数の小領域のそれぞれにおいて、
前記複数の小領域のそれぞれにおける、前記第1の方向の逆方向の側の端部を始点として、かつ、前記複数の小領域のそれぞれにおける、前記第1の方向の側の端部を終点として、前記第2の方向に沿った前記マルチビームの一括した偏向を、前記第1の方向の逆方向の側の端部から前記第1の方向の側の端部へ向かって繰り返し行う第1の工程を行い、その後、
前記複数の小領域のそれぞれにおける、前記第1の方向の逆方向の側の端部を始点として、かつ、前記複数の小領域のそれぞれにおける、前記第1の方向の側の端部を終点として、前記第2の方向の逆方向に沿った前記マルチビームの一括した偏向を、前記第1の方向の逆方向の側の端部から前記第1の方向の側の端部へ向かって繰り返し行う第2の工程を行うことにより、
前記N×N’個の小領域群を走査するように、前記マルチビームを一括して偏向する第2の機能の2つの機能を持つ偏向器と、
前記基板に前記マルチビームを照射することに起因して前記基板から放出される2次電子を検出する検出器と、
を備え、
前記Nの値と前記Mの値として、前記Nの値と前記Mの値との間の最大公約数が1になる組み合わせの値を用いることを特徴とする荷電粒子ビーム検査装置。 a movable stage on which the substrate is placed;
a stage control circuit that continuously moves the stage in a direction opposite to the first direction;
N rows (N is an integer of 2 or more) at the same pitch p on the substrate surface in the first direction and N' rows (N' is an integer of 1 or more) in a second direction orthogonal to the first direction. ) Using a multi-beam composed of a plurality of lined up charged particle beams, the inspection area of the substrate has a size obtained by p/M (M is an integer of 2 or more) in the first direction and in the second direction. N×N' small areas on the substrate arranged at the pitch p in the first direction and N' in the second direction among a plurality of small areas divided into a predetermined size. Deflecting the multi-beams at once into a group so as to follow the continuous movement of the stage while the stage continuously moves a distance obtained by N/M·p in the opposite direction to the first direction. While tracking deflection of the multi-beam, the movement of the stage from the N×N' small area group in the opposite direction to the first direction is completed, Tracking reset is performed by collectively re-deflecting the multi-beams to a new group of N×N' small regions arranged at the pitch p in the first direction and N spaces apart in the first direction. The first function and
While the multi-beams are being tracking deflected to follow the continuous movement of the stage, each of the multi-beams is directed to each of the plurality of small areas,
The end point of each of the plurality of small regions on the side opposite to the first direction is the starting point, and the end point of each of the plurality of small regions on the side of the first direction is the end point. , a first step in which the collective deflection of the multi-beams along the second direction is repeatedly performed from an end on a side opposite to the first direction toward an end on a side in the first direction; Perform the process, and then
The end point of each of the plurality of small regions on the side opposite to the first direction is the starting point, and the end point of each of the plurality of small regions on the side of the first direction is the end point. , repeatedly deflecting the multi-beams in a direction opposite to the second direction from an end opposite to the first direction toward an end opposite the first direction; By performing the second step,
a deflector having two functions, a second function of deflecting the multi-beams all at once so as to scan the N×N′ small area group;
a detector that detects secondary electrons emitted from the substrate due to irradiation of the multi-beam to the substrate;
Equipped with
A charged particle beam inspection apparatus characterized in that, as the value of N and the value of M, a combination of values such that the greatest common divisor between the value of N and the value of M is 1 is used.
前記ステージの移動速度Vは
V=PSN/(2Tv)
である請求項1記載の荷電粒子ビーム検査装置。 the second direction or the second direction, including a measurement pixel size PS that can be irradiated with the charged particle beam, and a second beam settling time Ofs_v in the second direction or a direction opposite to the second direction; When the beam scan time in the opposite direction is Tv,
The moving speed V of the stage is V=PS N /(2Tv)
The charged particle beam inspection apparatus according to claim 1.
前記第2の方向又は前記第2の方向の逆方向のビームスキャン時間Tvは
Tv=(p/PS)×(p/M/PS)×(1/f)+(p/M/PS)×Ofs_v
である請求項1記載の荷電粒子ビーム検査装置。 When the measurement pixel size that can be irradiated with the charged particle beam is PS, and the scan frequency of the charged particle beam is f,
The beam scanning time Tv in the second direction or the opposite direction to the second direction is Tv=(p/PS)×(p/M/PS)×(1/f)+(p/M/PS)× Ofs_v
The charged particle beam inspection apparatus according to claim 1.
前記ステージを第1の方向の逆方向に連続移動させるステージ制御回路と、
前記第1の方向に前記基板面上において同一ピッチpでN列(Nは2以上の整数)かつ前記第1の方向と直交する第2の方向にN’列(N’は1以上の整数)並ぶ複数の荷電粒子ビームによって構成されるマルチビームを用いて、前記基板の検査領域が前記第1の方向にp/M(Mは2以上の整数)で得られるサイズかつ前記第2の方向に所定のサイズで分割された複数の小領域のうち、前記第1の方向に前記ピッチpでN個かつ前記第2の方向にN’個並ぶ前記基板上のN×N’個の小領域群に前記マルチビームを一括して偏向して、前記ステージが前記第1の方向の逆方向にN/M・pで得られる距離を連続移動する間、前記ステージの連続移動に追従するように前記マルチビームをトラッキング偏向すると共に、前記第1の方向の逆方向に前記N/M・pで得られる距離の前記ステージの移動が完了するまでに、前記N×N’個の小領域群から前記第1の方向にN個離れた、前記第1の方向に前記ピッチpで並ぶ新たなN×N’個の小領域群に前記マルチビームを一括して偏向し直すことでトラッキングリセットを行う第1の機能と、
前記ステージの連続移動に追従するように前記マルチビームがトラッキング偏向されている間に、前記マルチビームのそれぞれを、前記複数の小領域のそれぞれにおいて、
前記複数の小領域のそれぞれにおける、前記第1の方向の逆方向の側の端部を始点として、かつ、前記複数の小領域のそれぞれにおける、前記第1の方向の側の端部を終点として、前記第2の方向に沿った前記マルチビームの一括した偏向を、前記第1の方向の逆方向の側の端部から前記第1の方向の側の端部へ向かって繰り返し行う第1の工程を行い、その後、
前記第1の方向の逆方向に沿った前記マルチビームの一括した偏向を、繰り返し行う第2の工程を行い、その後、
前記第1の方向に沿った前記マルチビームの一括した偏向を、繰り返し行う第3の工程を行い、その後、
前記複数の小領域のそれぞれにおける、前記第1の方向の逆方向の側の端部を始点として、かつ、前記複数の小領域のそれぞれにおける、前記第1の方向の側の端部を終点として、前記第2の方向の逆方向に沿った前記マルチビームの一括した偏向を、前記第1の方向の逆方向の側の端部から前記第1の方向の側の端部へ向かって繰り返し行う第4の工程を行うことにより、
前記N×N’個の小領域群を走査するように、前記マルチビームを一括して偏向する第2の機能の2つの機能を持つ偏向器と、
前記基板に前記マルチビームを照射することに起因して前記基板から放出される2次電子を検出する検出器と、
を備え、
前記Nの値と前記Mの値として、前記Nの値と前記Mの値との間の最大公約数が1になる組み合わせの値を用いることを特徴とする荷電粒子ビーム検査装置。 a movable stage on which the substrate is placed;
a stage control circuit that continuously moves the stage in a direction opposite to the first direction;
N rows (N is an integer of 2 or more) at the same pitch p on the substrate surface in the first direction and N' rows (N' is an integer of 1 or more) in a second direction orthogonal to the first direction. ) Using a multi-beam composed of a plurality of lined up charged particle beams, the inspection area of the substrate has a size obtained by p/M (M is an integer of 2 or more) in the first direction and in the second direction. N×N' small areas on the substrate arranged at the pitch p in the first direction and N' in the second direction among a plurality of small areas divided into a predetermined size. Deflecting the multi-beams at once into a group so as to follow the continuous movement of the stage while the stage continuously moves a distance obtained by N/M·p in the opposite direction to the first direction. While tracking deflection of the multi-beam, the movement of the stage from the N×N' small area group in the opposite direction to the first direction is completed, Tracking reset is performed by collectively re-deflecting the multi-beams to a new group of N×N' small regions arranged at the pitch p in the first direction and N spaces apart in the first direction. The first function and
While the multi-beams are being tracking deflected to follow the continuous movement of the stage, each of the multi-beams is directed to each of the plurality of small areas,
The end point of each of the plurality of small regions on the side opposite to the first direction is the starting point, and the end point of each of the plurality of small regions on the side of the first direction is the end point. , a first step in which the collective deflection of the multi-beams along the second direction is repeatedly performed from an end on a side opposite to the first direction toward an end on a side in the first direction; Perform the process, and then
A second step of repeatedly deflecting the multi-beams in a direction opposite to the first direction is performed, and then,
A third step is performed in which the collective deflection of the multi-beams along the first direction is repeatedly performed, and then,
The end point of each of the plurality of small regions on the side opposite to the first direction is the starting point, and the end point of each of the plurality of small regions on the side of the first direction is the end point. , repeatedly deflecting the multi-beams in a direction opposite to the second direction from an end opposite to the first direction toward an end opposite the first direction; By performing the fourth step,
a deflector having two functions, a second function of deflecting the multi-beams all at once so as to scan the N×N′ small area group;
a detector that detects secondary electrons emitted from the substrate due to irradiation of the multi-beam to the substrate;
Equipped with
A charged particle beam inspection apparatus characterized in that, as the value of N and the value of M, a combination of values such that the greatest common divisor between the value of N and the value of M is 1 is used.
前記第1の方向又は前記第1の方向の逆方向における第1ビーム整定時間Ofs_hを含む、前記第1の方向又は前記第1の方向の逆方向のビームスキャン時間をTh、
前記第2の方向又は前記第2の方向の逆方向における第2ビーム整定時間Ofs_vを含む、前記第2の方向又は前記第2の方向の逆方向のビームスキャン時間をTvとしたときに、
前記ステージの移動速度Vは
V=PSN/(2×(M×Th+Tv))
である請求項5記載の荷電粒子ビーム検査装置。 The measurement pixel size that can be irradiated with the charged particle beam is PS,
Th, a beam scanning time in the first direction or in the opposite direction to the first direction, including a first beam settling time Ofs_h in the first direction or in the opposite direction to the first direction;
When Tv is the beam scanning time in the second direction or in the opposite direction to the second direction, including the second beam settling time Ofs_v in the second direction or in the opposite direction to the second direction,
The moving speed V of the stage is V=PS N /(2×(M×Th+Tv))
The charged particle beam inspection apparatus according to claim 5.
前記第1の方向又は前記第1の方向の逆方向のビームスキャン時間Thは
Th=(p/PS)×(p/M/PS)×(1/f)+(p/PS)×Ofs_h
であり、
前記第2の方向又は前記第2の方向の逆方向のビームスキャン時間Tvは
Tv=(p/PS)×(p/M/PS)×(1/f)+(p/M/PS)×Ofs_v
である請求項5記載の荷電粒子ビーム検査装置。 When the measurement pixel size that can be irradiated with the charged particle beam is PS, and the scan frequency of the charged particle beam is f,
The beam scanning time Th in the first direction or in the opposite direction to the first direction is Th=(p/PS)×(p/M/PS)×(1/f)+(p/PS)×Ofs_h
and
The beam scanning time Tv in the second direction or the opposite direction to the second direction is Tv=(p/PS)×(p/M/PS)×(1/f)+(p/M/PS)× Ofs_v
The charged particle beam inspection apparatus according to claim 5.
前記マルチビームのそれぞれを、前記複数の小領域のそれぞれにおいて、
前記複数の小領域のそれぞれにおける、前記第1の方向の逆方向の側の端部を始点として、かつ、前記複数の小領域のそれぞれにおける、前記第1の方向の側の端部を終点として、前記第2の方向に沿った前記マルチビームの一括した偏向を、前記第1の方向の逆方向の側の端部から前記第1の方向の側の端部へ向かって繰り返し行う第1の工程を行い、その後、
前記複数の小領域のそれぞれにおける、前記第1の方向の逆方向の側の端部を始点として、かつ、前記複数の小領域のそれぞれにおける、前記第1の方向の側の端部を終点として、前記第2の方向の逆方向に沿った前記マルチビームの一括した偏向を、前記第1の方向の逆方向の側の端部から前記第1の方向の側の端部へ向かって繰り返し行う第2の工程を行うことにより、
前記基板に前記マルチビームを照射することに起因して前記基板から放出される2次電子を検出し、
前記第1の方向の逆方向にN/M・pで得られる距離の前記ステージの移動が完了するまでに、前記N×N’個の小領域群から前記第1の方向にN個離れた、前記第1の方向に前記ピッチpで並ぶ新たなN×N’個の小領域群に前記マルチビームを一括して偏向し直すことでトラッキングリセットを行う荷電粒子ビーム検査方法であって、
前記Nの値と前記Mの値として、前記Nの値と前記Mの値との間の最大公約数が1になる組み合わせの値を用いる荷電粒子ビーム検査方法。 Arranged in N rows (N is an integer of 2 or more) at the same pitch p on the substrate surface in a first direction and in N' rows (N' is an integer of 1 or more) in a second direction perpendicular to the first direction. Using a multi-beam composed of a plurality of charged particle beams, the inspection area of the substrate has a size obtained by p/M (M is an integer of 2 or more) in the first direction and a predetermined size in the second direction. Among the plurality of small regions divided by size, N×N' small regions on the substrate are arranged at the pitch p in the first direction and N' in the second direction. The multi-beams are deflected all at once to follow the continuous movement of the stage on which the substrate is placed while it continuously moves a distance obtained by N/M·p in the opposite direction to the first direction. While tracking and deflecting the multi-beam,
each of the multi-beams in each of the plurality of small areas,
The end point of each of the plurality of small regions on the side opposite to the first direction is the starting point, and the end point of each of the plurality of small regions on the side of the first direction is the end point. , a first step in which the collective deflection of the multi-beams along the second direction is repeatedly performed from an end on a side opposite to the first direction toward an end on a side in the first direction; Perform the process, and then
The end point of each of the plurality of small regions on the side opposite to the first direction is the starting point, and the end point of each of the plurality of small regions on the side of the first direction is the end point. , repeatedly deflecting the multi-beams in a direction opposite to the second direction from an end opposite to the first direction toward an end opposite the first direction; By performing the second step,
detecting secondary electrons emitted from the substrate due to irradiation of the multi-beam to the substrate;
By the time the stage has completed moving a distance obtained by N/M·p in the opposite direction to the first direction, the stage has moved away from the group of N×N′ small regions by N in the first direction. , a charged particle beam inspection method that performs a tracking reset by collectively re-deflecting the multi-beam to a new group of N×N' small regions arranged at the pitch p in the first direction,
A charged particle beam inspection method using, as the value of N and the value of M, a combination of values such that the greatest common divisor between the value of N and the value of M is 1.
前記ステージの移動速度Vは
V=PSN/(2Tv)
である請求項11記載の荷電粒子ビーム検査方法。 the second direction or the second direction, including a measurement pixel size PS that can be irradiated with the charged particle beam, and a second beam settling time Ofs_v in the second direction or a direction opposite to the second direction; When the beam scan time in the opposite direction is Tv,
The moving speed V of the stage is V=PS N /(2Tv)
The charged particle beam inspection method according to claim 11.
前記第2の方向又は前記第2の方向の逆方向のビームスキャン時間Tvは
Tv=(p/PS)×(p/M/PS)×(1/f)+(p/M/PS)×Ofs_v
である請求項11記載の荷電粒子ビーム検査方法。 When the measurement pixel size that can be irradiated with the charged particle beam is PS, and the scan frequency of the charged particle beam is f,
The beam scanning time Tv in the second direction or the opposite direction to the second direction is Tv=(p/PS)×(p/M/PS)×(1/f)+(p/M/PS)× Ofs_v
The charged particle beam inspection method according to claim 11.
前記マルチビームのそれぞれを、前記複数の小領域のそれぞれにおいて、
前記複数の小領域のそれぞれにおける、前記第1の方向の逆方向の側の端部を始点として、かつ、前記複数の小領域のそれぞれにおける、前記第1の方向の側の端部を終点として、前記第2の方向に沿った前記マルチビームの一括した偏向を、前記第1の方向の逆方向の側の端部から前記第1の方向の側の端部へ向かって繰り返し行う第1の工程を行い、その後、
前記第1の方向の逆方向に沿った前記マルチビームの一括した偏向を、繰り返し行う第2の工程を行い、その後、
前記第1の方向の逆方向に沿った前記マルチビームの一括した偏向を、繰り返し行う第3の工程を行い、その後、
前記複数の小領域のそれぞれにおける、前記第1の方向の逆方向の側の端部を始点として、かつ、前記複数の小領域のそれぞれにおける、前記第1の方向の側の端部を終点として、前記第2の方向の逆方向に沿った前記マルチビームの一括した偏向を、前記第1の方向の逆方向の側の端部から前記第1の方向の側の端部へ向かって繰り返し行う第4の工程を行うことにより、
前記基板に前記マルチビームを照射することに起因して前記基板から放出される2次電子を検出し、
前記第1の方向の逆方向にN/M・pで得られる距離の前記ステージの移動が完了するまでに、前記N×N’個の小領域群から前記第1の方向にN個離れた、前記第1の方向に前記ピッチpで並ぶ新たなN×N’個の小領域群に前記マルチビームを一括して偏向し直すことでトラッキングリセットを行う荷電粒子ビーム検査方法であって、
前記Nの値と前記Mの値として、前記Nの値と前記Mの値との間の最大公約数が1になる組み合わせの値を用いる荷電粒子ビーム検査方法。 Arranged in N rows (N is an integer of 2 or more) at the same pitch p on the substrate surface in a first direction and in N' rows (N' is an integer of 1 or more) in a second direction perpendicular to the first direction. Using a multi-beam composed of a plurality of charged particle beams, the inspection area of the substrate has a size obtained by p/M (M is an integer of 2 or more) in the first direction and a predetermined size in the second direction. Among the plurality of small regions divided by size, N×N' small regions on the substrate are arranged at the pitch p in the first direction and N' in the second direction. The multi-beams are deflected all at once to follow the continuous movement of the stage on which the substrate is placed while it continuously moves a distance obtained by N/M·p in the opposite direction to the first direction. While tracking and deflecting the multi-beam,
each of the multi-beams in each of the plurality of small areas,
The end point of each of the plurality of small regions on the side opposite to the first direction is the starting point, and the end point of each of the plurality of small regions on the side of the first direction is the end point. , a first step in which the collective deflection of the multi-beams along the second direction is repeatedly performed from an end on a side opposite to the first direction toward an end on a side in the first direction; Perform the process, and then
A second step of repeatedly deflecting the multi-beams in a direction opposite to the first direction is performed, and then,
A third step of repeatedly deflecting the multi-beams in a direction opposite to the first direction is performed, and then,
The end point of each of the plurality of small regions on the side opposite to the first direction is the starting point, and the end point of each of the plurality of small regions on the side of the first direction is the end point. , repeatedly deflecting the multi-beams in a direction opposite to the second direction from an end opposite to the first direction toward an end opposite the first direction; By performing the fourth step,
detecting secondary electrons emitted from the substrate due to irradiation of the multi-beam to the substrate;
By the time the stage has completed moving a distance obtained by N/M·p in the opposite direction to the first direction, the stage has moved away from the group of N×N′ small regions by N in the first direction. , a charged particle beam inspection method that performs a tracking reset by collectively re-deflecting the multi-beam to a new group of N×N' small regions arranged at the pitch p in the first direction,
A charged particle beam inspection method using, as the value of N and the value of M, a combination of values such that the greatest common divisor between the value of N and the value of M is 1.
前記第1の方向又は前記第1の方向の逆方向における第1ビーム整定時間Ofs_hを含む、前記第1の方向又は前記第1の方向の逆方向のビームスキャン時間をTh、
前記第2の方向又は前記第2の方向の逆方向における第2ビーム整定時間Ofs_vを含む、前記第2の方向又は前記第2の方向の逆方向のビームスキャン時間をTvとしたときに、
前記ステージの移動速度Vは
V=PSN/(2×(M×Th+Tv))
である請求項15記載の荷電粒子ビーム検査方法。 The measurement pixel size that can be irradiated with the charged particle beam is PS,
Th, a beam scanning time in the first direction or in the opposite direction to the first direction, including a first beam settling time Ofs_h in the first direction or in the opposite direction to the first direction;
When Tv is the beam scanning time in the second direction or in the opposite direction to the second direction, including the second beam settling time Ofs_v in the second direction or in the opposite direction to the second direction,
The moving speed V of the stage is V=PS N /(2×(M×Th+Tv))
The charged particle beam inspection method according to claim 15.
前記第1の方向又は前記第1の方向の逆方向のビームスキャン時間Thは
Th=(p/PS)×(p/M/PS)×(1/f)+(p/PS)×Ofs_h
であり、
前記第2の方向又は前記第2の方向の逆方向のビームスキャン時間Tvは
Tv=(p/PS)×(p/M/PS)×(1/f)+(p/M/PS)×Ofs_v
である請求項15記載の荷電粒子ビーム検査方法。 When the measurement pixel size that can be irradiated with the charged particle beam is PS, and the scan frequency of the charged particle beam is f,
The beam scanning time Th in the first direction or in the opposite direction to the first direction is Th=(p/PS)×(p/M/PS)×(1/f)+(p/PS)×Ofs_h
and
The beam scanning time Tv in the second direction or the opposite direction to the second direction is Tv=(p/PS)×(p/M/PS)×(1/f)+(p/M/PS)× Ofs_v
The charged particle beam inspection method according to claim 15.
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