JP2021098874A - Film deposition device and film deposition method using the same - Google Patents

Abstract

To miniaturize a footprint of a film deposition device for forming a multilayer film.SOLUTION: A film deposition device includes: a chamber; a substrate support part capable of being lifted up and down in a vertical direction; and multiple cathode parts on which a target is set. The chamber is partitioned into multiple spaces by a partition wall including an opening port. The substrate support part can move between the multiple spaces through the partition. The multiple cathode parts are respectively disposed in the multiple spaces.SELECTED DRAWING: Figure 1

Description

The present invention relates to a film forming apparatus and a film forming method for forming a multilayer film made of a plurality of materials on a base material by a sputtering method.

A technique of forming a multilayer film composed of a plurality of layers having different refractive indexes on the surface of a base material to suppress light reflection is widely used in various fields. For example, in an imaging device, a multilayer film is formed on the surface of an optical element constituting the optical system in order to reduce ghosts and flares caused by reflected light in the optical system.

Patent Document 1 discloses a sputtering apparatus that horizontally partitions the same vacuum and installs targets made of different materials in each partitioned space. The substrate to be filmed is conveyed in the horizontal direction, and film formation is sequentially performed on each target to form a multilayer film.

Japanese Unexamined Patent Publication No. 2009-299156

In the film forming apparatus of Patent Document 1, a plurality of targets are arranged in the horizontal direction according to the number of layers. Therefore, the size of the multilayer film is increased by the number corresponding to the type of material or the number of layers. As the size of the device increases, the footprint (floor area) increases and the building area of the building also increases.

In order to solve the above problems, the film forming apparatus according to the present invention is a film forming apparatus including a chamber, a base material support portion capable of ascending and descending in the vertical direction, and a plurality of cathode portions on which targets are installed. The chamber is partitioned into a plurality of spaces by a partition wall having an opening, the base material support portion can move between the plurality of spaces through the partition, and the plurality of cathode portions. It is characterized in that it is divided and arranged in the plurality of spaces.

Further, the film forming method according to the present invention includes a chamber, a base material support portion that can be raised and lowered in the vertical direction, and a plurality of cathode portions on which a target is installed, and a plurality of partition walls having openings in the chamber. A film forming apparatus that is partitioned into spaces, the base material support portion can move between the plurality of spaces through the partition, and the plurality of cathode portions are divided into the plurality of spaces. The step of installing the base material on the base material support portion, the step of placing the base material in the first space among the plurality of spaces, and the step of performing the film formation. It is characterized by having a step of moving the base material to a space different from the first space among a plurality of spaces to form a film.

By using the film forming apparatus of the present invention, it is possible to realize the miniaturization of the film forming apparatus for forming the multilayer film and suppress the increase in the building area of the building in which the film forming apparatus is housed.

It is a figure which shows the outline of the film forming apparatus which concerns on 1st Embodiment, and is the figure which shows the state which chucking is in the film forming position of an upper space. It is a figure which shows the outline of the film forming apparatus which concerns on 1st Embodiment, and is the figure which shows the state which chucking is in the film forming position of the lower space. (A) is a perspective view of the shutter, and (b) is a diagram showing the layout of the shutter when viewed from the direction along the axis P. It is a figure which shows various states of a shutter. It is a figure which shows the outline of the film forming apparatus which concerns on 2nd Embodiment. It is a figure which shows the outline of the film forming apparatus which concerns on 3rd Embodiment.

Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. Unless otherwise specified, the dimensions, materials, shapes, arrangements, various control procedures, control parameters, target values, etc. of each member described in the embodiment can be appropriately changed according to the purpose. ..

(First Embodiment)
1 and 2 are views showing a vertical cross section of the schematic configuration of the film forming apparatus 100. The film forming apparatus 100 divides the inside of the chamber 1 into a plurality of spaces in the vertical direction, and by installing a target in each space, it is possible to form a multilayer film with a small floor area.

First, the film forming apparatus 100 will be described, and then the procedure for forming a multilayer film will be described.

In FIGS. 1 and 2, the inside of the chamber 1 included in the film forming apparatus 100 is vertically divided into two by a partition wall 12 having a circular opening, and the cathode portion 2a is formed in each space partitioned by the partition wall 12. Has 2b. Further, it has a chucking (base material supporting portion) 5 for supporting the base material to be filmed (hereinafter referred to as a base material) 4, and a rotary elevating mechanism 10 for controlling the rotation and the vertical position of the chucking 5. doing. The chucking 5 can rotate about an axis P extending in the vertical direction. Hereinafter, in the vertical direction, the space above the partition wall 12 of the chamber is referred to as an upper space, and the space below the partition wall 12 is referred to as a lower space.

A plate 13 is attached to the chucking 5 via a support shaft 14, and the central axis of the support shaft 14 coincides with the axis P of the chucking 5. The center of the plate 13 is preferably on the extension of the shaft P. The positions of the plate 13 and the support shaft 14 move up and down in conjunction with the raising and lowering of the chucking 5, but they are separated from the rotational drive of the chucking 5 and have a structure that does not rotate.

The diameter of the chucking 5 is designed to be smaller than the opening diameter (diameter of the opening) of the partition wall 12, and can be moved to either of the spaces partitioned by the partition wall 12 through the opening. FIG. 1 shows the case where the chucking 5 is in the film forming position in the upper space, and FIG. 2 shows the case where the chucking 5 is in the film forming position in the lower space. As shown in FIG. 1, when the chucking 5 is fixed at the film forming position in the upper space, the length of the support shaft 14 and the shape of the plate 13 are set so that the plate 13 fits into the opening of the partition wall 12. Has been done. That is, when the film is formed on the upper side of the spaces adjacent to each other in the vertical direction, the plate 13 fits into the opening of the partition wall 12 and can be separated from the adjacent spaces. Then, as shown in FIG. 2, when the chucking 5 is fixed at the film forming position in the lower space, the chucking 5 itself is designed to substantially close the opening of the partition wall 12. Therefore, the upper space and the lower space can be used as independent film forming spaces.

Inside the chamber 1, a shutter 11 that can be rotated around the same axis (axis P) as the chucking 5 is further provided by the shutter rotation mechanism 15. FIG. 3A shows a perspective view of the shutter 11, and FIG. 3B shows a view of the shutter 11 as viewed from the direction of the axis P.

As shown in FIG. 3A, the shutter has a bottom portion 111 and a shielding portion 112 rising vertically from the bottom portion 111. The shielding portion 112 has a shape in which a cylinder surrounding a range in which the chucking 5 can move in the vertical direction is partially cut out in the vertical direction, and as shown in FIG. 3B, from the direction along the axis P. Looking at it, it looks like an arc. The outer diameter (diameter of the bottom 111) R _{2 of the shutter 11 is smaller than the opening diameter R 1} of the partition wall 12, and the inner diameter of the shutter (inner diameter of the cylinder including the shielding portion 112) R ₃ is the diameter R _{4 of the chucking 5.} Is bigger than. The string S of the shielding portion 112 is longer than the length of the targets 21a and 21b in the rotation axis direction. The chucking 5, the plate 13, the bottom 111 of the shutter, and the opening are preferably circular, but may be polygonal close to a circle.

The maximum dimension of the gap between the shutter 11 and the chucking 5 (R _3- R ₄ ) / 2, and the maximum dimension of the gap between the plate 13 and the partition wall 12 at the opening (R _1- R ₂ ) / It is preferable that all of 2 are less than the mean free path of the sputtered particles. With such a configuration, it is possible to suppress the movement of sputtered particles between the upper space and the lower space, and the sputtered particles are transferred to the target 21b (21a) when the film is formed by the target 21a (21b). It can be prevented from adhering to the surface of. Further, when the length of the shielding surface 112 in the vertical direction along the axis P is made _{longer than the sum of the vertical distance between the axis O 2a} and the axis O _2b and the radius of the target 21a and the radius of the 21b, the cathode portion It is possible to reduce the film formation on the inner wall of the chamber 1 facing the surface.

The cathode portions 2a and 2b are rotary cathodes that are connected to a drive mechanism (not shown) and that can rotate about an axis that is spatially twisted with the axis P. Specifically, the cathode portion (first cathode portion) 2a provided in the upper space can rotate about the _{axis O 2a (second axis), and the cathode portion (first cathode portion) provided in the lower space can be rotated.} The second cathode portion) 2b is rotatable about the axis O _2b (third axis). The angle formed by the axis O _2a , each of the axes O _2b, and the axis P (first axis) is preferably 90 °. In FIG. 1A, the shaft O _2a and the shaft O _2b are provided in parallel, but the present invention is not limited to this.

A cylindrical backing tube 22a or 22b having a target 21a or 21b bonded to the surface is installed on the cathode portions 2a and 2b. The rotations of the targets 21a and 21b can be individually controlled around _{the axes O 2a} and O _2b. When forming a plurality of types of layers in one chamber, targets 21a and 21b made of different materials are installed on the cathode portions 2a and 2b.

The cathode portions 2a and 2b are provided with magnet case shafts 23a and 23b that can rotate independently of the backing tube, centering on the _{shafts O 2a} and O _2b, respectively, within the range covered by the installed backing tubes 22a and 22b. Has been done. Magnets 24a and 24b are provided inside the magnet case shafts 23a and 23b, and the positions of the magnets 24a and 24b can be changed by the magnet case shafts 23a and 23b. The magnets 24a and 24b include magnet pairs having different polarities, and the magnets 24a and 24b generate a magnetic field on the surfaces of the targets 21a and 21b. This magnetic field attracts the plasma to the surfaces of the targets 21a and 21b, making it possible to efficiently form a film.

An AC power supply 6 is connected to the cathode portions 2a and 2b via a switch 16 and can supply electric power for causing plasma discharge. The power supply for supplying electric power is not limited to the AC power supply, and may be configured to include, for example, a DC pulse power supply for each cathode portion.

The chamber 1 can be sealed, and the inside of the chamber 1 can be maintained in a negative pressure state by exhausting the gas inside by the exhaust devices 8a and 8b. The pressure in the chamber 1 can be adjusted by controlling the amount of gas supplied from the gas supply unit 7a or 7b and the degree of opening / closing of the exhaust ports of the exhaust devices 8a and 8b. The exhaust device 8a and the gas supply unit 7a are connected to the upper space of the chamber, and the exhaust device 8b and the gas supply unit 7b are connected to the lower space of the chamber. The configuration is not limited to the above.

In FIGS. 1 and 2, the gas supply units 7a and 7b include process gas supply lines 72a and 72b and reactive gas supply lines 74a and 74b. The process gas may be any gas type as long as it can supply the ions required for sputtering, but Ar gas is widely used. The reactive gas is supplied when sputtering is performed in the reactive mode or the transition mode. For example, when a film is formed while oxidizing the material surface of a metal target, O ₂ gas is supplied as a reactive gas. In an apparatus that does not perform reactive sputtering, the reactive gas supply lines 74a and 74b can be omitted. Alternatively, when a film is formed on the base material 4 and the film is reacted later, if the reaction is an oxidation reaction, the supply ports of the reactive gas supply lines 74a and 74b are arranged in the vicinity of the base material 4 to generate oxygen radicals. It can also supply the containing gas. The supply amount of each gas is adjusted by controlling the valves 71a, 73a, 71b, 73b included in the gas supply unit 7.

In the case of an apparatus that performs reactive sputtering, it is preferable to provide a plasma emission monitor (PEM) that detects the emission brightness of plasma generated on the surfaces of the targets 21a and 21b and controls the valves 71a, 73a, 71b and 73b.

Subsequently, an example of forming a multilayer film composed of two types of films, material A and material B, will be described. Therefore, it is assumed that the target 21a of the material A is installed on the cathode portion 2a and the target 21b of the material B is installed on the cathode portion 2b.

<Installation of base material>
The base material 4 is set in the base material holder 3 in advance outside the apparatus, and the base material holder 3 is carried into the apparatus from the carry-in inlet provided in the chamber 1. FIG. 4A shows the arrangement of the openings of the target 21a, the chucking 5, the shutter 11, and the partition wall 12 when the inside of the chamber 1 is viewed from the top plate side when the base material holder 3 is installed in the chucking 5. Shown. The circle shown by the broken line indicates the opening of the partition wall 12, and the portion indicated by the arrow is the carry-in entrance E. The shutter 11 is controlled in a state (state 1) in which the shielding portion 112 moves to the side opposite to the carry-in entrance E and does not interfere with the operation of installing the base material holder 3 in the chucking 5.

The chucking 5 is installed on the top plate of the chamber 1 and has a structure capable of supporting the base material at a predetermined position. The chucking 5 shown in FIGS. 1 and 2 can support the base material holder 3 on which the base material 4 is installed. By adopting such a structure, the base material 4 is installed in the base material holder 3 in advance from the outside, and then the base material holder 3 is carried into the chamber 1 from the transport port (not shown) and installed at the film forming position. It can be done and has excellent workability. However, the mechanism for supporting the base material 4 is not limited to the chucking 5 shown in the figure, and may be configured to directly support the base material 4 or may support the base material diagonally. There may be. Further, although a plurality of base materials 4 are supported in FIG. 1 (a), a configuration in which one base material 4 is supported may be used.

The chucking 5 is connected to the rotary elevating mechanism 10, and can perform a rotational operation about the axis P (first axis) and an elevating operation in a direction along the axis P. In order to assist the operation of supporting the base material holder 3 on the chucking 5, a mechanism for swinging the chucking 5 may be added to the rotary elevating mechanism 10.

The length of the support shaft 14 is determined so that the plate 13 substantially closes the opening of the partition wall 12 when the base material supported by the chucking 5 is controlled to the position where the film is formed in the upper space. ing. Therefore, when the base material is in the film formation position in the upper space, the upper space and the lower space are substantially separated by the plate 13.

<Film formation in the upper space>
When the base material holder 3 is installed in the chucking 5, the carry-in inlet E is closed and the inside of the chamber 1 is exhausted by the exhaust devices 8a and 8b. In order to reduce the variation in film thickness, the rotation of the chucking 5 is started at an appropriate timing until the film formation is started. Further, before supplying electric power to the cathode portion 2a, the shutter 11 is controlled so as to move the shielding portion 112 to the target 21a side and shield the sputter particles from the target 21a toward the base material 4 (state 2). To. The state of the shielding portion 112 at this time is shown in FIG. 4 (b).

When the pressure inside the chamber 1 is reduced to a predetermined pressure, the process gas and the reactive gas are supplied from the gas supply units 7a and 7b, and the pressure is adjusted. When a predetermined pressure is reached, the target 21a is rotated and power is supplied from the AC power source to generate plasma on the surface of the target 21a, and pre-sputtering is performed. As shown in FIG. 4B, since the shielding portion 112 of the shutter 11 is moved to the target 21a side, the sputtered particles at the time of pre-sputtering are blocked by the shielding portion 112, and a low quality film is formed on the base material 4. It can be suppressed.

When pre-sputtering is performed for a predetermined time, the shielding portion 112 is in the state (state 3) of FIG. 4 (c) that does not prevent the sputtered particles from reaching the base material 4 while the plasma is still generated. And the film formation of the film made of the material A is started. The potential of the shutter 11 is floating so that the movement of the shielding portion 112 does not affect the plasma or film formation generated on the surface of the target 21a.

When the film thickness of the film made of the material A reaches a predetermined thickness, the shutter 11 is controlled to be in the state 2, the film formation is completed, and the power supply to the target 21a is also stopped.

<Film formation in the lower space>
Next, the chucking 5 is lowered to the film forming position in the lower space. When the chucking 5 is fixed at a predetermined position and the pre-sputtering of the target 21b is completed, the shutter 11 is controlled to the state 3 and the film formation of the film made of the material B is started.

When the film thickness of the film of the material B reaches a predetermined thickness, the shutter 11 is controlled to be in the state 2, the power supply to the target 21a is stopped, and the film formation by the target 21b is completed.

When a plurality of films of material A and material B are deposited, the chucking 5 is moved between the upper space and the lower space according to the number of layers, and film formation is performed in each space.

When the film formation of the required number of layers is completed, the supply of the reaction gas and the process gas is stopped, and the chamber 1 is purged. When the inside of the chamber 1 returns to the atmospheric pressure, the shutter 11 is controlled to the state 1, and the base material 4 together with the base material holder 3 is taken out from the carry-in inlet E.

As described above, according to the film forming apparatus according to the present invention, by partitioning the inside of the chamber into a plurality of pieces in the vertical direction and arranging targets in each of them, a plurality of types of devices having a smaller footprint than the conventional device can be used. It is possible to form a laminated film made of the above-mentioned film.

However, the film forming apparatus of the present invention can also be used by installing a target of the same material on the target installation portions 2a and 2b. In that case, it is not possible to form a multilayer film, but if one of the targets is exhausted or a problem such as abnormal discharge occurs, it is possible to continue film formation using the other target without replacing the target. it can.

Further, although the device configuration in which the rotary cathode is provided has been described, a configuration in which a flat plate cathode is provided may be used.

Further, although the configuration in which the chamber is divided into two in the vertical direction has been described, a configuration in which the chamber is divided into two or more is also possible by the same idea.

(Second embodiment)
In the first embodiment, the configuration in which one target is installed in the upper space and one in the lower space has been described, but in this embodiment, a case where two targets are installed in each space will be described.

FIG. 5 shows a schematic view of the film forming apparatus according to the present embodiment. In FIG. 5, the state in which the chucking 5 is in the film forming position in the upper space is shown by a solid line, and the state in which the chucking 5 is in the film forming position in the lower space is shown by a dotted line. The apparatus shown in FIG. 5 is suitable for film formation on a lens surface having a large half-open angle (the angle formed by the optical axis of the lens and the normal of the concave or convex surface of the lens at an effective diameter). Since the basic configuration is the same as that in FIG. 1, the differences may be mainly described, and the description of the configuration and layout common to those in FIG. 1 may be omitted.

In the device of FIG. 5, cathode portions 62a and 62b are provided in the upper space partitioned vertically by the partition wall 12, and 62c and 62d are provided in the lower space. Cathode portion 62a~62d is connected to a driving mechanism (not shown), the axis _O 62a _{~ O 62d} with the shaft P, respectively, which is the rotation center of the chucking 5 (first axis) and the spatially skewed Can be rotated around. Axis O _62a (second axis) and axis O _62b (third axis) are parallel to each other, and axis O _62c (fourth axis) and axis O _62d (fifth axis) are parallel to each other. There is. In FIG. 5, the shaft O _62a and the shaft O _62a are provided so as to be parallel to each other, but the present invention is not limited to this.

Further, the arrangement of the cathode portions 62a to 62d is not limited to this. The cathode portion 62a and the cathode portion 62b may be arranged with the chucking 5 sandwiched in the upper space, and the cathode portion 62c and the cathode portion 62d may be arranged with the chucking 5 sandwiched in the lower space.

Similar to the cathode portion of the first embodiment, backing tubes 622a to 622d are installed in the cathode portions 62a to 62d, respectively. Targets 621a to 621d are bonded to the backing tubes 622a to 622d. Further, the cathode portions 62a to 62d are provided with magnet case shafts 623a to 623d, respectively, and magnets 624a to 624d are provided inside the magnet case shaft. The backing tubes 622a to 622d and the magnet case shafts 623a to 623d have a structure capable of independently rotating around the _{axes O 62a to} O _{62d, respectively.}

Targets 621a and 621b made of the same material are installed on the cathode portions 62a and 62b, and targets 621c and 621d made of the same material are installed on the cathode portions 62c and 62d. When forming a multilayer by stacking films made of different types of film forming materials, the targets 621a and 621b and the targets 621c and 621d may be made of different materials.

In order to form a film having high in-plane film thickness uniformity on a substrate having a large half-open angle, it is preferable to design and arrange the cathode portions 62a to 62d so as to satisfy a predetermined condition. The specific conditions are as follows. In a state where the chucking 5 and substrate holder 3 is in the deposition position of the upper space, in the vertical direction, the distance Ma of the substrate support surface of the shaft O _62a and the substrate holder 3, the axis O _62b and the substrate support The distance Mb from the surface satisfies Ma <Mb. Then, in the horizontal direction, and the distance La between the axial P is the rotational center of the shaft _{O 62a} and the chucking 5, the distance Lb between the axial _{O 62b} and the shaft P satisfies the relationship of La> Lb. Further, in a state where the chucking 5 and the base material holder 3 are in the film formation position (the position shown by the dotted line in FIG. 5) in the lower space, the axis O _62c and the base material support surface of the base material holder 3 are in the vertical direction. The distance Mc and _{the distance Md between the shaft O 62d} and the base material support surface satisfy the relationship of Mc <Md. Then, the distance Lc between the _{axis O 62c} and the axis P and the distance Ld between the _{axis O 62d} and the axis P in the horizontal direction satisfy the relationship of Lc> Ld.

Further, it is preferable that the distance of La is equal to or greater than the sum of the radius of chucking 5 and the radius of target 621a, and the distance of Lb is equal to or greater than the sum of the radius of chucking 5 and the radius of target 621b. It is preferable that Lc and Ld also satisfy the same conditions as La and Lb.

An AC power supply 6 is connected to the cathode portions 62a to 62d via a switch 16, and power for generating plasma is applied to either the target 621a and 621b pair or the 621c and 621d pair. Can be supplied. The AC power supply 6 for supplying electric power is not limited to the configuration via the switch 16, and it is also possible to adopt a power supply other than the AC power supply. For example, when a DC pulse power supply is adopted, it is preferable to provide four power supplies so that power can be supplied to each of the targets 21a, 21b, 21c, and 21d without going through the switch 16.

It is preferable that the string of the shielding portion 112 of the shutter 11 is longer than any of the lengths in the directions along _{the axes O 62a to} O _{62d of the targets 621a to 621d.} Further, when the vertical length of the shielding portion 112 _{is made longer than the sum of the distance between the axis O 62a} and the axis O _62d , the radius of the target 621a, and the radius of the target 621d, the inner wall of the chamber 1 facing the cathode portion is reached. It is possible to reduce the film formation.

Hereinafter, a procedure for forming a film on a lens having a large half-open angle will be described using the apparatus of FIG. It is assumed that the targets 621a and 621b of the material A are installed on the cathode portions 62a and 62b, and the targets 621c and 621d of the material B are installed on the cathode portions 62c and 62d.

<Installation of base material>
The base material can be installed in the same manner as in the first embodiment.

<Film formation in the upper space>
Before the start of film formation, the optimum positions of the magnets 624a and 624b for forming a uniform film on the substrate 4 are calculated based on the database created in advance, and the magnets 624a and 624b are calculated based on the calculation results. The position of is adjusted. The positions of the magnets 624a and 624b may be adjusted at the same time.

When the installation of the base material 4 is completed, the rotation of the chucking 5 is started, and the shutter 11 is controlled to be in the state 2. The carry-in port is closed and the inside of the chamber 1 is exhausted.

When the pressure inside the chamber 1 is reduced to a predetermined pressure, a process gas and a reactive gas are supplied, and when the predetermined pressure is reached, electric power is alternately supplied from the AC power source 6 to the cathode portions 62a and 62b to perform pre-sputtering. Will be done.

When the pre-sputtering is completed, the shutter 11 is controlled to be in the state 3, and the film formation of the film made of the material A is started.

When the film formed on the substrate 4 reaches a predetermined thickness, the shutter 11 is controlled so as to be in the state 2, the power supply to the targets 621a and 621b is stopped, and the film formation is completed.

<Film formation in the lower space>
The chucking 5 is lowered to the film formation position in the lower space. When the chucking 5 is fixed at a predetermined position and the pre-sputtering of the targets 621c and 621d is completed, the shutter 11 is controlled to be in the state 3, and the film formation of the film made of the material B is started.

When the film of the material B reaches a predetermined thickness, the shutter 11 is controlled to be in the state 2, the power supply to the targets 621c and 621d is stopped, and the film formation is completed.

When a plurality of films of material A and material B are deposited, it is preferable to move the chucking 5 between the upper space and the lower space according to the number of layers, and to form a film in each space.

By using the apparatus according to this embodiment, it is possible to form a multilayer film having a uniform in-plane film thickness on a substrate having a large semi-open angle with an apparatus having a small footprint.

(Third Embodiment)
FIG. 6 is a diagram showing a vertical cross section of the film forming apparatus according to the present embodiment. While the film forming apparatus according to the second embodiment includes two sets (4 units) of cathode portions, the film forming apparatus according to this embodiment includes four sets (8 units) of cathode portions 72a to 72h. ing. If a partition wall is added between the cathode portions 72a and 72b and 72e and 72f, or between the cathode portions 72c and 72d and 72g and 72h, a maximum of three types of films can be formed. .. Further, if a partition wall is added between the cathode portions 72a and 72b and 72e and 72f, and between the cathode portions 72c and 72d and 72g and 72h, a maximum of four types of films can be formed. It becomes.

Since the basic configuration is the same as that in FIG. 5, the differences may be mainly described, and the description of the configuration and layout common to FIG. 5 may be omitted.

In the device of FIG. 6, the cathode portions 72a, 72b, 72e, 72f are provided in the upper space partitioned vertically by the partition wall 12, and the cathode portions 72c, 72d, 72g, 72h are provided in the lower space. Cathode portion 72a~72h is connected to a driving mechanism (not shown), the axis O _72a ~ O in the axis P is the center of rotation of the chucking 5 respectively (first axis) and the spatially skewed It can be rotated around _72h. Axis O _72a (second axis) and axis O _72b (third axis), axis O _72c (fourth axis) and axis O _72d (fifth axis), axis O _72e (sixth axis) The shaft O _72f (7th shaft), the shaft O _72g (8th shaft), and the shaft O _72h (9th shaft) are provided in parallel with each other. In FIG. 6, the shaft O _72a , the shaft O _72c , the shaft O _72e , and the shaft O _72g are parallel to each other, but the present invention is not limited to this.

Similar to the cathode portion of the first embodiment, backing tubes 722a to 722h are installed in the cathode portions 72a to 72h, respectively. Targets 721a to 721h are bonded to the backing tubes 722a to 722h, respectively. Further, the cathode portions 72a to 72h each include magnet case shafts 723a to 723h, and magnets 724a to 724h are provided inside each magnet case shaft. The backing tubes 722a to 722h and the magnet case shafts 723a to 723h have a structure capable of independently rotating around the _{axes O 72a to} O _{72h, respectively.}

Similar to the first embodiment, the AC power supply 6 is connected to each cathode portion via the switch 16. The power can be supplied by the switch 16 to any one of the target 721a and 721b, 721c and 721d, 721e and 721f, and 721g and 721h.

Targets of the same material are installed in the cathode portions 72a and 72b, 72c and 72d, 72e and 72f, and 72g and 72h, respectively. When the films of different materials are laminated to form a multilayer, it is preferable to install targets made of different materials for each cathode installation group.

The apparatus of this embodiment is also suitable for film formation on a lens having a large half-open angle, and in order to form a film having high in-plane film thickness uniformity on a lens having a large half-open angle, the cathode portions 72a to 72h Is preferably designed and arranged so as to satisfy a predetermined condition. Specifically, it is as follows. In a state where the chucking 5 and the base material holder 3 are in the film formation position in the upper space, _{the distance Ma between the shaft O 72a} and the base material support surface of the base material holder 3 _{in the vertical direction, and the shaft O 72b} and the base material support The distance Mb from the surface is arranged so as to satisfy Ma <Mb. _{Then, the distance La between the axis O 72a} and the axis P which is the rotation center of the chucking 5 in the horizontal direction _{and the distance Lb between the axis O 72b} and the axis P are arranged so as to satisfy the relationship of La> Lb. To. Further, the distance Me between the _{shaft O 72e and the base material support surface and the distance Mf between the shaft O 72f} and the base material support surface in the vertical direction are arranged so as to satisfy the relationship of Me <Mf. Further, in the horizontal direction, the distance Le between the _{axis O 72e and the axis P and the distance Lf between the axis O 72f} and the axis P are arranged so as to satisfy the relationship Le> Lf.

Further, in a state where the chucking 5 and the base material holder 3 are in the film formation position in the lower space, _{the distance Mc between the shaft O 72c} and the base material support surface of the base material holder 3 _{in the vertical direction, and the shaft O 72d} and the base. The distance Md from the material supporting surface is arranged so as to satisfy the relationship of Mc <Md. Then, the distance Lc between the _{axis O 72c and the axis P and the distance Ld between the axis O 72d} and the axis P in the horizontal direction are arranged so as to satisfy the relationship of Lc> Ld. Further, in the vertical direction, the distance Mg between the _{shaft O 72 g and the base material support surface and the distance Mh between the shaft O 72h} and the base material support surface are arranged so as to satisfy the relationship of Mg <Mh. Further, in the horizontal direction, the distance Lg between the _{axis O 72g and the axis P and the distance Lh between the axis O 72h} and the axis P are arranged so as to satisfy the relationship of Lg> Lh.

Further, it is preferable that the distances La to Lf between the axis P and the axes of the respective cathode portions in the horizontal direction are all equal to or greater than the sum of the radius of the chucking 5 and the radius of each target.

In order to form a film having high film thickness uniformity, the positions of the magnets 724a to 724h may be determined by the same procedure as in the second embodiment.

Since the procedure for installing the base material 4 and forming the film in order in the upper space and the lower space is the same as that in the second embodiment, the description thereof is omitted, and here, the targets 722a and 722b provided in the upper space are provided. The procedure for forming a film using the set of the target 722e and the set of the targets 722e and 722f will be described. Here, it is assumed that the targets 722a, 722b, 722e, and 722f are made of the same material. Then, in order to further improve the film thickness uniformity of the film formed on the base material, the arrangement of the cathode portions 72a and 72b with respect to the chucking 5 and the arrangement of the cathode portions 72e and 72f with respect to the chucking 5 are different from each other. To do.

After the base material 4 is installed in the chamber 1, the chamber 1 is sealed and exhausted by the exhaust devices 78a and 78b. When the pressure inside the chamber 1 is reduced to a predetermined pressure, the process gas is introduced from the gas supply units 772a and 774a, and is formed after the pre-sputtering of the pair of targets 722a and 722b in the same procedure as in the second embodiment. The membrane is made. When the film on the substrate 4 reaches a predetermined thickness, the shutter 11 is controlled so that the shielding portion 112 is in the state 2, the power supply to the targets 721a and 721b is stopped, and the film formation is completed.

When the film formation by the targets 721a and 721b is completed, the gas introduction from the gas supply units 772a and 774a is stopped. Then, the chucking 5 is moved to a position suitable for film formation by the targets 21e and 21f. At this time, the chucking 5 is moved as it is rotated. Next, the process gas is reintroduced from the gas supply units 772a and 774a, and then electric power is supplied to the cathode units 2e and 2f to generate plasma, and pre-sputtering of the targets 721e and 721f is performed. After cleaning the surfaces of the targets 721e and 721f by pre-sputtering, the shutter 11 is controlled to be in the state 2 while the plasma is being generated, and the surface of the base material 4 has a predetermined film thickness. The film is formed up to.

By alternately performing such sputtering with a pair of cathode portions 72a and 72b and a pair of 72e and 72f, a film having a more uniform film thickness can be formed on the base material 4.

The method for forming the film is not limited to this, and the film can be formed by appropriately combining four sets of cathode portions.

1 Chamber 2a, 2b, 62a to 62d, 72a to 72h Cathode 3 Base material holder 4 Base material 5 Chucking 6 Power supply 7a, 7b, 67a, 67b, 77a, 77b Gas supply part 8a, 8b Exhaust device 9 Control device 10 Rotation lifting mechanism 11 Shutter 12 Partition wall 13 Plate 14 Support 15 Rotating mechanism 16 Switch 21a, 21b, 621a to 621d, 721a to 721h Target 24a, 24b, 624a to 624d, 724a to 724h Magnet

Claims (17)

A film forming apparatus including a chamber, a base material support portion capable of ascending and descending in the vertical direction, and a plurality of cathode portions on which targets are installed.
The chamber is divided into a plurality of spaces by a partition wall having an opening.
The base material support can move between the plurality of spaces through the partition.
The plurality of cathode portions are arranged separately in the plurality of spaces.
A film forming apparatus characterized by this. A plate is attached to the base material support portion via a support shaft.
The length of the support shaft and the shape of the plate are determined so that the plate fits into the opening of the partition wall when the film is formed on the upper side of the space adjacent to each other in the vertical direction.
The film forming apparatus according to claim 1. The base material support portion is rotatable about a first axis extending in the vertical direction.
Further, the shutter is provided with a bottom portion and the shielding portion having a shape in which a cylinder that rises vertically from the bottom portion and surrounds a range in which the base material support portion can move in the vertical direction is partially cut out in the vertical direction.
The film forming apparatus according to claim 1 or 2. When the shielding portion is viewed from the vertical direction, the shielding portion has an arc shape, and the length of the chord is longer than the length of the target that can be installed on the cathode portion.
The film forming apparatus according to claim 3. The film forming apparatus according to claim 3 or 4, wherein the opening and the plate have a circular shape. The maximum dimension of the gap formed between the shutter and the base material support portion and the maximum dimension of the gap formed between the plate and the partition wall at the opening are both less than the mean free path of the sputtered particles.
The film forming apparatus according to any one of claims 3 to 5, wherein the film forming apparatus is characterized. Each of the plurality of spaces partitioned by the partition wall of the chamber is provided with one cathode portion.
The film forming apparatus according to any one of claims 1 to 6, wherein the film forming apparatus is characterized. Two cathode portions are provided in each of the plurality of spaces partitioned by the partition wall of the chamber.
The film forming apparatus according to any one of claims 1 to 6, wherein the film forming apparatus is characterized. The chamber is divided into two spaces in the vertical direction.
In the space above in the vertical direction, a first cathode portion that can rotate around the second axis and a second cathode portion that can rotate around the third axis are provided.
In the space below in the vertical direction, a third cathode portion that can rotate around the fourth axis and a fourth cathode portion that can rotate around the fifth axis are provided.
The second axis and the third axis are parallel to each other, the fourth axis and the fifth axis are arranged to be parallel to each other, and the second axis and the fourth axis are arranged so as to be parallel to each other. , Each placed in a twisted position with respect to the first axis,
The film forming apparatus according to any one of claims 3 to 6, wherein the film forming apparatus is characterized in that. In a state where the base material support portion is in the film forming position in the upper space, the distance Ma between the second axis and the base material support surface of the base material support portion in the vertical direction, the third axis, and the above. The distance Mb from the base material supporting surface satisfies the relationship of Ma <Mb, and the distance La between the second axis and the first axis in the horizontal direction and the third axis and the first axis The film forming apparatus according to claim 9, wherein the distance Lb from the shaft satisfies the relationship of La> Lb. In a state where the base material support portion is in the film formation position in the lower space, the distance Mc between the fourth axis and the base material support surface of the base material support portion in the vertical direction and the fifth axis The distance Md from the base material supporting surface satisfies the relationship of Mc <Md, and the distance Lc between the fourth axis and the first axis in the horizontal direction and the fifth axis and the first axis. The film forming apparatus according to claim 9 or 10, wherein the distance Ld from the axis of the above satisfies the relationship of Lc> Ld. The length of the shielding portion in the vertical direction is the distance between the second axis and the fifth axis in the vertical direction, the radius of the target installed on the second axis, and the fifth axis. Longer than the sum of the radius of the target to be installed,
The film forming apparatus according to any one of claims 9 to 11. The chamber is divided into two spaces in the vertical direction.
In the space above in the vertical direction, a pair of the first cathode portion and the second cathode portion, and a fifth cathode portion and a seventh cathode portion that can rotate about a sixth axis with the shutter in between. A sixth set of cathodes that can rotate around the axis of
In the space below in the vertical direction, a set of the third cathode portion and the fourth cathode portion, and a seventh cathode portion and a seventh cathode portion that can rotate about the eighth axis with the shutter in between. A set of an eighth cathode portion that can rotate around the axis of 9 is provided.
The sixth axis and the seventh axis, the eighth axis and the ninth axis are parallel to each other, respectively.
The sixth axis and the eighth axis are respectively arranged at twisted positions with respect to the first axis.
The film forming apparatus according to any one of claims 9 to 12, characterized in that. In a state where the base material support portion is in the film forming position in the upper space, the distance Mc between the sixth axis and the base material support surface of the base material support portion in the vertical direction, the seventh axis, and the above. The distance Md from the base material supporting surface satisfies the relationship of Mc <Md, and the distance Lc between the sixth axis and the first axis in the horizontal direction and the seventh axis and the first axis The film forming apparatus according to claim 13, wherein the distance Ld from the shaft satisfies the relationship Lc> Ld. In a state where the base material support portion is in the film formation position in the lower space, the distance Me between the eighth axis and the base material support surface of the base material support portion in the vertical direction and the ninth axis The distance Mf from the base material supporting surface satisfies the relationship of Me <Mf, and the distance Le between the eighth axis and the first axis in the horizontal direction and the ninth axis and the first axis. The film forming apparatus according to claim 13 or 14, wherein the distance Lf from the axis satisfies the relationship of Le> Lf. The film forming apparatus according to any one of claims 1 to 15, wherein the cathode portion is a rotary cathode. The base material is provided with a chamber, a base material support portion capable of ascending and descending in the vertical direction, and a plurality of cathode portions on which a target is installed, and the chamber is partitioned into a plurality of spaces by a partition wall having an opening. A film forming method using a film forming apparatus in which a support portion can move between the plurality of spaces through the partition and the plurality of cathode portions are separately arranged in the plurality of spaces.
The process of installing the base material on the base material support portion and
A step of placing the base material in the first space among the plurality of spaces to form a film, and
A step of moving the base material to a space other than the first space among the plurality of spaces to form a film.
A film forming method characterized by having.

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