JP2021097313A - Elastic wave device package - Google Patents

Abstract

To provide an elastic wave device package with a standardized size and a wider variety of functions or characteristics.SOLUTION: An elastic wave device package includes resonant forming regions 3A to 3D formed on a substrate 2, and a wall 6 and a roof 7 formed on the wall 6 on a surface acoustic wave device including the substrate 2 having resonator forming regions 3A to 3D. The wall 6 is provided so as to form a closed region, and the wall 6 and the roof 7 form a cavity 8 on the substrate 2. The wall 6 is formed so as to cover some or all of the resonator forming regions 3A to 3D provided on the substrate 2.SELECTED DRAWING: Figure 3

Description

The present invention relates to an elastic wave device package in which a hollow structure is formed on an elastic wave device by a wall formed on the surface of the elastic surface wave device and a roof formed on the wall.

In mobile communication devices such as mobile phones, RF devices such as filters and duplexers are becoming more integrated with front-end modules (FEMs) and power amplifiers (PAs), and are included in common devices such as FEM (FEMiD) and common devices. It tends to be integrated as an inclusive power amplifier module (PAMID). In these multi-chip modules, not only molded-sealed chip components but also RF devices in chip-scale package (CSP) to which a wafer-level package (WLP) process is applied are increasingly mounted on a board. Among them, there are parts that are distributed as products by WLP-CSP alone. WLP-CSP, which is a chip scale package applicable to a wafer level package, generally has merits of area saving and height reduction, and has a structure suitable for a component of a multi-chip module.

For example, the wafer level package of the surface acoustic wave device described in Patent Document 1 has a structure in which a wall forming a closed region is provided on a substrate, and a cavity is formed by the wall and the roof in the closed region. That is, an IDT electrode, a reflector, a pad, etc. are formed on the surface of the substrate (wafer), and a wall made of a photosensitive resin is formed on the surface of the substrate on which the IDT electrode, the reflector, the pad, etc. are formed. It is formed in the area excluding the reflector and the pad. The wall is covered with a film-like photosensitive resin by the roof, and a cavity is formed between the substrate and the roof. The external terminals for connecting to the mounting board are provided in a structure that penetrates the roof and the wall and is connected to the pads on the board.

Japanese Unexamined Patent Publication No. 2004-147220

In the conventional WLP process, device function addition, function selection, performance improvement, and performance adjustment have not been performed in processes such as wall and roof. This is because the conventional WLP process emphasizes maintaining the function and performance of the wafer state in terms of device characteristics and performance. Due to these backgrounds, no WLP process wall was formed or placed on the resonator region.
Therefore, the device has been redesigned from the stage of changing the conductor pattern such as the IDT electrode or the reflector provided on the substrate surface according to the required tuning of the characteristics or performance of the device and the change in the specifications. As a result, every time the required device characteristics or performance is changed, the man-hours and lead time of the work associated with the device design change before the WLP process and the device wafer manufacturing increase. In particular, it usually takes a lot of man-hours to adjust the electrode shape and the electrode metal laminated structure for reducing the transverse mode spurious at the end of the IDT electrode.
Further, in general, the chip size of the WLP-CSP is the bare chip size of the surface acoustic wave device. As an example, the chip size mounted on the standardized 1109 package (1.1 mm x 0.9 mm) is approximately 0.9 mm x 0.7 mm. In packing and mounting of chips that deviate from the standard size, a dedicated member that deviates from the standard size is required, which increases the procurement cost.
In view of the above-mentioned problems, the present invention provides an elastic wave device package in which a wider variety of functions or characteristics can be obtained by adding functions, selecting functions, improving performance or adjusting performance in the WLP process. The purpose is to do. It also aims to reduce procurement costs by realizing the above-mentioned functions and characteristics in a more standardized size.

One aspect of the surface acoustic wave device package of the present invention is an elastic wave device package including an elastic surface acoustic wave device, in which a substrate containing a piezoelectric material, a resonator forming region provided on the substrate, and the resonator A wall provided so as to form a closed region on a surface acoustic wave device including a substrate having a forming region, and a cavity formed on the wall and formed in the closed region together with the substrate and the wall. The wall is formed so as to cover a part or the whole area of the resonator forming region provided on the substrate.

In this way, by covering a part or all of the resonator forming region with the wall, it is possible to realize an elastic wave device package having a function or characteristic different from that of the surface acoustic wave device package having the original filter function. It becomes. Therefore, the sizes of various elastic wave device packages can be standardized, and the procurement cost can be reduced.

Further, as an elastic wave device package, a device having a function or characteristic different from that of the original filter element can be realized by covering a part or the whole region of the resonator forming region with a wall. Therefore, the electrode pattern of the base device can be standardized. That is, since the function can be selected or the characteristics can be adjusted in the wall forming process, which is one of the packaging processes, the development lead time for realizing the multi-chip module is shortened.

As a specific embodiment of the above-described embodiment, the elastic wave device package of the present invention further includes a resonator formation region added redundantly as the resonator formation region, and the resonator formation region added redundantly is selectively selected. In some cases, the function as a resonator is inactivated by being covered with a wall.

By covering a part of the resonator forming region with a wall in this way, the portion covered with the wall loses the function of operating by elastic waves. Therefore, the portion covered with the wall can be used as another element or circuit. Therefore, by covering with a wall, it is possible to realize a portion having other functions in common with a portion that does not cover the resonator forming region with the wall, and the procurement cost can be reduced.

In the elastic wave device package of the present invention, as a specific embodiment of the above-described embodiment, the resonator forming region covered by the wall is a region covering the IDT electrode, and the IDT electrode is covered by the wall to form a capacitor. Is configured.

By covering the IDT electrodes for some filter elements with a wall in this way, a capacitor can be realized, so that a surface acoustic wave device package can be realized without separately providing capacitors of different sizes. Therefore, the elastic wave device package to which the capacitor function is added can be realized in common with the one in which the IDT electrode is not covered with the wall, and the procurement cost can be reduced.

In the elastic wave device package of the present invention, as a specific embodiment of the above-described embodiment, the resonator forming region has an IDT electrode and a reflector, and the wall is a reflector of one or more resonator forming regions. It is formed in the area that covers a part of.

In this way, by covering a part of one or more reflectors with a wall, it is possible to change the function as a resonator of the filter element, and another elastic wave device package having a different electrode configuration is used. There is no need to prepare as a chip. Therefore, the wafer and the package of the elastic wave device can be standardized, and the procurement cost can be reduced.

In the elastic wave device package of the present invention, as a specific embodiment of the above-described embodiment, the reflectors are provided by connecting both ends of a bus bar arranged so as to face each other and a plurality of bus bars facing each other. The reflector has an electrode, and the reflector is provided adjacent to the IDT electrode. The reflector has a first characteristic as a characteristic adjustment region in which at least a part of the electrodes on the busbar side is covered with a wall. An adjustment region and a second characteristic adjustment region are provided, and the distance between the first characteristic adjustment region and the second characteristic adjustment region is formed so that the IDT electrode side is wider than the opposite side. Is what it is.

By covering the electrodes of the reflector so that the opposite edges of the characteristic adjustment region are inclined in this way, lateral spurious due to reflection of surface acoustic waves from the bus bar can be reduced.

The elastic wave device package of the present invention has an IDT electrode in the resonator forming region as a specific embodiment of the above-described embodiment, and the IDT electrodes are formed of a first bus bar and a second bus bar facing each other. A bus bar, a first electrode finger formed by extending from the first bus bar toward the second bus bar, and a second electrode finger formed by extending from the second bus bar toward the first bus bar. The first bus bar and the second bus bar are covered with a wall, and a part of the first electrode finger and the second electrode finger is covered with a wall as a characteristic adjustment region. It has an area.

By covering a part of the electrode finger with the wall in this way, it is possible to change the function of the filter element as a resonator, and it is necessary to prepare a different electrode configuration as a separate chip as an elastic wave device package. Is gone. Therefore, the wafer and the package of the elastic wave device can be standardized, and the procurement cost can be reduced.

In the elastic wave device package of the present invention, as a specific embodiment of the above-described embodiment, the characteristic adjustment region is formed so as to cover each base end portion of the first electrode finger and the second electrode finger with a wall. It is something that is.

In this way, by covering the base end portion of the electrode finger of the IDT electrode with the wall, the velocity in the propagation direction of the surface acoustic wave on the base end portion side can be slowed down. Therefore, a piston mode that suppresses transverse mode spurious can be realized. This makes it possible to suppress the transverse mode spurious of the device and improve the performance as a filter device. Further, by providing a region covered with a wall for realizing such a piston mode for a part or all of a plurality of resonator forming regions, the basic pattern of the IDT electrode can be made the same, depending on the application. An elastic wave device package having a filter function can be realized.

In the elastic wave device package of the present invention, as a specific embodiment of the above-described embodiment, the characteristic adjustment region includes a region covering from the first bus bar to the tip of the second electrode finger, and the second bus bar. It has a region covering from to the tip of the first electrode finger.

By covering up to the tip of the electrode finger of the IDT electrode with a wall in this way, the velocity in the propagation direction of the surface acoustic wave at the tip of the electrode finger can be made slower than the velocity in the intersection region of the electrode finger. Therefore, a piston mode that suppresses transverse mode spurious can be realized. This makes it possible to suppress the transverse mode spurious of the device and improve the performance as a filter device. Further, by providing a region covered with a wall for realizing such a piston mode for a part or all of a plurality of resonator forming regions, the basic pattern of the IDT electrode can be made the same, depending on the application. An elastic wave device package having a filter function can be realized.

In the elastic wave device package of the present invention, as a specific embodiment of the above-described embodiment, the characteristic adjustment region includes a region covering the tip of the first electrode finger and a region covering the tip of the second electrode finger. And have.

As described above, by providing the region covering the tip of the electrode finger of the IDT electrode as the region covered by the wall, the piston mode for suppressing the transverse mode spurious can be realized. Therefore, it is possible to suppress the transverse mode spurious of the device and improve the performance as a filter device. Further, by providing a wall-covered area for realizing such a piston mode for a part or all of the plurality of filter elements, the basic pattern of the IDT electrode is made the same, and the filter performance is improved by the WLP process. An improved elastic wave device package can be realized.

The elastic wave device package of the present invention is a specific embodiment of the above-described embodiment, in which at least one of the wall and the roof is made of a photosensitive resin.

By forming at least one of the wall and the roof with the photosensitive resin in this way, the above-mentioned structure can be easily realized by using photolithography.

According to the present invention, it is possible to realize a plurality of types of elastic wave device packages having different functions or characteristics while sharing the electrode pattern as the original filter element. Therefore, the sizes of various elastic wave devices can be standardized, and the procurement cost can be reduced.

It is a top view which shows the schematic arrangement of the resonator formation region in 1st Embodiment of the elastic wave device package of this invention. It is sectional drawing of the elastic wave device package of this embodiment, and it is drawn along the line AA of FIG. It is a top view which shows the region covered with a wall in the elastic wave device package of FIG. FIG. 3 is a cross-sectional view taken along the line BB of FIG. FIG. 3 is a cross-sectional view taken along the line CC of FIG. It is a figure which shows an example of the manufacturing process of the elastic wave device package of this embodiment. It is a top view which shows the schematic arrangement of the element in 2nd Embodiment of the elastic wave device package of this invention together with a bus bar. It is a circuit diagram of the elastic wave device package of FIG. It is a top view which shows the electrode arrangement of a part of the element of the elastic wave device package of FIG. It is a top view which shows the wall formation region of this embodiment. It is a top view which shows the part of FIG. 10 enlarged. FIG. 11 is a cross-sectional view taken along the line DD of FIG. It is a top view which shows the 3rd Embodiment of the elastic wave device package of this invention. 13 is a cross-sectional view taken along the line EE of FIG. It is a top view which shows the wall formation region of the 4th Embodiment of the elastic wave device package of this invention. It is a top view which shows a part of FIG. 15 enlarged. 16 is a cross-sectional view taken along the line FF of FIG. It is a top view which shows the wall formation region of the 5th Embodiment of the elastic wave device package of this invention. It is a top view which shows a part of FIG. 18 enlarged. 19 is a cross-sectional view taken along the line GG of FIG. It is a top view which shows the other example of the electrode pattern in this embodiment.

<First Embodiment>
The first embodiment of the elastic wave device package according to the present invention will be described with reference to FIGS. 1 to 6. FIG. 1 shows the arrangement of the resonator forming region in the elastic wave device package of the present embodiment, and FIG. 2 shows the internal structure of the present embodiment along the line AA of FIG. However, in FIG. 1, the roof for forming the cavity is omitted in the package. This elastic wave device package is configured as a chip scale package (CSP) to which a wafer level package (WLP) process is applied.

The elastic wave device package 1 has a substrate 2 containing a piezoelectric material as its substrate (wafer). That is, the substrate 2 may be composed of not only the piezoelectric material but also a structure in which the piezoelectric material and another material are laminated. As shown in FIG. 1, the resonator forming regions 3A to 3D and the pad 5 are provided on the substrate 2. The resonator forming regions 3A to 3D are regions in which the IDT electrode 4 and the bus bar and the reflector electrode (not shown) are formed on the substrate 2, as represented by the resonator forming region 3B in FIG. ..

A wall 6 is provided on the substrate 2 on which the resonator forming regions 3A to 3D are formed so as to form a closed region. A roof 7 is provided on the wall 6. The closed region formed by the wall 6 becomes a cavity 8 formed between the roof 7 and the substrate 2. In FIG. 1, the wall 6 is provided at a position avoiding the resonator forming regions 3A to 3D and the pad 5. In the elastic wave device package 1, an external connection terminal (bump) 9 for mounting the package 1 on a mounting board (not shown) penetrates the roof 7 and the wall 6 and is provided on a pad 5 provided with a base metal 5a. It is provided by connecting.

In this first embodiment, the wall 6 covers a part or all of the resonator forming region to change the function or characteristic that should be exhibited originally. In the example shown in FIG. 3, of the resonator forming regions 3A to 3D, the resonator forming region 3B and the resonator forming region 3C shown by the solid line are not covered by the wall 6, and the resonator forming region 3A and the resonance shown by the dotted line are not covered by the wall 6. In the child forming region 3D, a wall 6 is formed so as to cover all of these regions.

FIG. 4 is a cross-sectional view taken along the line BB of FIG. 3, showing a state in which the cavity 8 is present on the resonator forming region 3C without being covered with the wall 6. On the other hand, FIG. 5 is a cross-sectional view taken along the line CC of FIG. 3, showing a state in which the resonator forming region 3D is covered with the wall 6 and the cavity 8 does not exist. That is, in this example, by covering the resonator forming region 3A and the resonator forming region 3D with the wall 6, the function as a resonator due to the propagation of surface acoustic waves is eliminated. That is, the resonator forming region 3A and the resonator forming region 3D are redundantly added regions, and these resonator forming region 3A and the resonator forming region 3D have no portion that functions as an elastic wave element. is there. On the other hand, the resonator forming region 3B and the resonator forming region 3C that are not covered by the wall 6 remain functions as original resonators. The resonator forming region 3A and the resonator forming region 3D, which have no portion that functions as an elastic wave element, can be used as a capacitor as an example.

An example of the manufacturing process of the present embodiment will be described with reference to FIG. FIG. 6A shows the substrate 2 as a wafer on which the IDT electrode 4 and the pad 5 are already formed. Lithium tantalate, lithium niobate, or the like is used for the substrate 2. The IDT electrode 4 and the pad 5, and a reflector and a bus bar (wiring) (not shown) are formed by using a photolithography technique. For these IDT electrodes 4 and pads 5, for example, gold, copper, aluminum, alloys thereof, or the like can be used.

As shown in FIG. 6A, the photosensitive resin film 6X for forming the wall 6 is adhered to the substrate 2 on which the IDT electrode 4 and the like are formed. For forming the wall 6, a photosensitive resin may be applied instead of adhering the film. Next, as shown in FIG. 6B, the photosensitive resin film 6X is exposed to light through a photomask (not shown). Then, by developing, a closed region of the wall 6 is formed. That is, as shown in FIG. 6C, in the photosensitive resin film 6X, the photosensitive portion remains, and the non-photosensitive portion is defined as a cavity 6a and a cavity 6b. The cavity 6a is selectively formed in the corresponding portion of the resonator forming regions 3A to 3D. The cavity 6b is formed in a portion corresponding to the pad 5.

In the example of FIG. 3, a cavity 6a is formed in the wall 6 for the resonator forming region 3B and the resonator forming region 3C. On the other hand, the cavity 6a is not formed in the resonator forming region 3A and the resonator forming region 3D.

Next, as shown in FIG. 6D, the photosensitive resin film 7X to be the roof 7 is adhered onto the wall 6. Then, as shown in FIG. 6 (E), the photosensitive resin film 7X is exposed to light through a photomask (not shown). Here, the portion that is not exposed, that is, the portion that removes the photosensitive resin film 7X, is only the portion that matches the cavity 6b formed corresponding to the pad 5 on the wall 6 shown in FIG. 6C. Then, by developing, as shown in FIG. 6 (F), the cavity 7a is formed in the portion of the roof 7 corresponding to the cavity 6b of the wall 6.

After the cavity 7a is provided in this way, as shown in FIG. 6 (G), the base metal 5a of the external connection terminal 9 is provided on the pad 5 provided with the cavity 7a. Then, by applying the solder paste 9X on the roof 7 via the metal mask 10, the portion of the roof 7 corresponding to the cavity 7a is filled with the solder paste 9X. After that, by performing a reflow process, as shown in FIG. 6H, the solder paste 9X becomes an external connection terminal 9 made of solder. After that, it is cut into individual packages by a dicing process. Then, each package is mounted on a taping material (not shown) for storage and transportation, and is stored and transported.

According to the present embodiment, a wafer having a common electrode pattern is used, the pattern of the wall 6 is changed, and the wall 6 is selected to cover a part or all of the resonator forming region or not. It is possible to realize an elastic wave device package having a function or characteristic different from that of the original filter element, and to add or change the performance. Therefore, it is possible to realize standardized sizes of various elastic wave devices. Therefore, a standardized taping material or the like can be used as a means for storing and transporting various elastic wave device packages. Therefore, the procurement cost is reduced.

Further, as an elastic wave device package, not only a filter element having a single function or characteristic is planned, but a plurality of functions or characteristics can be realized. As an example, the resonator forming region 3A and Resonant forming region By preparing a redundant resonator forming region shown in 3D and selectively covering a part or all of the redundant resonator forming region with a wall, the function or characteristic different from that of the original filter element can be obtained. A device can be realized. Therefore, the electrode pattern of the base device can be standardized. That is, since the function can be selected or the characteristics can be adjusted in the packaging process, which is the wall forming process, the development lead time for realizing the multi-chip module can be shortened.

This reduction in lead time will be described. Since the functions and performance of surface acoustic wave devices are built in by the wafer process, defects or improvements can be found by evaluating the surface acoustic wave device package after mounting it on the mounting board together with other chips as a multi-chip module. It becomes clear. That is, the final product is obtained by repeating the following series of development flows several times.
1st stage; Chip design 2nd stage; Wafer manufacturing mask manufacturing 3rd stage; Device wafer manufacturing 4th stage; Assembly process (WLP)
5th stage; Module mounting 6th stage; Evaluation of module function and performance In this embodiment, the electrode pattern in the resonator formation region is standardized, and the electrode for the filter element is selected in the packaging stage (4th stage). By covering it with a wall, the function is selected or the characteristics are adjusted. Therefore, in order to select the function or adjust the characteristics, the steps from the first step to the third step can be omitted, and the process of trial and error can be narrowed down to the fourth to sixth steps. That is, different function selection or characteristic adjustment can be performed by standardizing the steps up to the step of FIG. 6 (A) and performing function selection or characteristic adjustment in the steps of FIGS. 6 (A) to 6 (C). .. Therefore, the development lead time is shortened.

<Second embodiment>
A second embodiment of the elastic wave device package of the present invention will be described with reference to FIGS. 7 to 12. An example of this embodiment is shown in a filter included in a front-end module of a mobile communication device such as a mobile phone. As shown in FIG. 7, on the substrate 2 containing the piezoelectric material, the resonator forming region 3E and the resonator forming region 3F, the external connection terminals 9A to 9F, the resonator forming region 3E and the resonator forming region 3F are mutual. Bus bars 13a to 13i are provided to connect the resonator forming region 3E and the resonator forming region 3F to any of the external connection terminals 9A to 9F. FIG. 8 is an equivalent circuit diagram of FIG. 7.

As shown in FIG. 7, the resonator forming region 3E includes IDT electrodes 14a to 14c, a reflector 15a, and a reflector 15b. Further, the resonator forming region 3F has IDT electrodes 14d to 14f, a reflector 15c, and a reflector 15d. The elastic wave device of this example constitutes a filter on the receiving side. The external connection terminal 9A is connected to an antenna (not shown), the external connection terminal 9F is connected to the receiving circuit, and the other external connection terminals 9B to 9E are connected to the ground. The device can also be used in circuits that require transmit filters and other filter functions.

FIG. 9 shows the electrode arrangement of a part of the elements of the elastic wave device package of this embodiment. The reflector 15a of this example is composed of a plurality of linear electrodes 150 provided in parallel and at equal intervals between the bus bar 13c and the bus bar 13d. The other reflectors 15b to 15d shown in FIG. 7 have a similar configuration. The IDT electrode 14a is a comb shape in which a plurality of electrode fingers 140 extending from the bus bar 13c and a plurality of electrode fingers 141 extending from the bus bar 13e are formed alternately and in parallel. It is composed of electrodes. The IDT electrode 14b was formed by extending from the bus bar 13a (first bus bar) and extending from a plurality of electrode fingers 140 (first electrode finger) and the bus bar 13b (second bus bar). A plurality of electrode fingers 141 (second electrode fingers) are composed of comb-shaped electrodes formed alternately and in parallel. Other IDT electrodes 14c to 14f have a similar configuration.

10 to 12 show a device in which the characteristics of the filter element composed of the resonator forming region 3E and the resonator forming region 3F are changed by covering a part of the electrodes 150 of the reflectors 15a to 15d with the wall 6. An example is shown. In this example, as shown in FIGS. 11 and 12, the electrodes 150 of the reflectors 15a to 15d are on the bus bar 13c (first bus bar) side and the bus bar 13d (second bus bar) side, which are both ends of the electrodes 150. An example in which the characteristic adjustment region 6c (first characteristic adjustment region) and the characteristic adjustment region 6d (second characteristic adjustment region) are provided, respectively, will be shown. As shown in FIG. 11, the distance between the characteristic adjustment region 6c and the characteristic adjustment region 6d formed on the bus bar 13c and the bus bar 13d, respectively, is formed in a tapered shape so as to be wide on the IDT electrode 14a side and narrow on the opposite side. Has been done. That is, the opposite edge 6c1 of the characteristic adjustment region 6c and the opposite edge 6d1 of the characteristic adjustment region 6d are formed so as to be inclined at an angle indicated by α with respect to the vertical direction which is the propagation direction of the surface acoustic wave. In FIG. 12, W1 shows the width of the wall 6 covering both ends of the electrode 150 of the reflector 15a in the cross section of the DD line of FIG. This width W1 becomes wider toward the IDT electrode 14a side of the reflector 15a.

By covering the electrodes 150 of the reflectors 15a to 15d so that the facing edges 6c1 and the facing edges 6d1 are inclined in this way, lateral spurious due to reflection from the bus bar 13c and the bus bar 13d can be reduced. That is, in FIG. 11, when the distance between the bus bar 13c and the bus bar 13d is an integral multiple of the wavelength λ of the operating frequency, a standing wave of the surface acoustic wave in the transverse mode is generated. Therefore, ripple may occur in the pass region of the filter. Therefore, the reflected waves from the bus bar 13c and the bus bar 13d do not reach the other side, and the standing wave does not occur, so that the generation of spurious in the transverse mode can be prevented. By providing such a characteristic adjustment region 6c as necessary, a filter having characteristics according to the application can be realized. In the reflector 15a, the bus bar connecting both ends of the electrode finger 150 may be met by a bus bar electrically insulated from the bus bar 13c and the bus bar 13d. The same applies to the reflectors 15c to 15d.

<Third embodiment>
A third embodiment of the elastic wave device package of the present invention will be described with reference to FIGS. 13 and 14. In this embodiment, the IDT electrode 14a and the IDT electrode 14b have a characteristic adjustment region 6e that covers the base end portion 140a of the electrode finger 140 with a wall 6, and a characteristic adjustment region 6e that covers the base end portion 141a of the electrode finger 141 with the wall 6. 6f is provided. FIG. 14 shows that not only the bus bars 13a and 13b but also the base end portion 140a of the electrode finger 140 and the base end portion 141a of the electrode finger 141 are covered by the wall 6 over the width of W2. Has been done.

As described above, if the characteristic adjustment region 6e and the characteristic adjustment region 6f are provided so as to cover not only the bus bar but also the base end portion 140a of the electrode finger 140 and the base end portion 141a of the electrode finger 141 with the wall 6, this characteristic adjustment region is provided. The velocity of surface acoustic waves in 6e and the characteristic adjustment region 6f can be slowed down. Therefore, it is possible to suppress the leakage of surface acoustic waves leaking from the intersection region Y of the electrode finger 140 and the electrode finger 141 to the bus bar 13a and the bus bar 13b, and the bus bar 13c and the bus bar 13e side. As a result, by providing the characteristic adjustment region 6e and the characteristic adjustment region 6f, spurious caused by leakage of surface acoustic waves can be reduced. Further, by providing such a characteristic adjustment region 6e and a characteristic adjustment region 6f, it is possible to contribute to the realization of a piston mode in which the surface acoustic wave is made uniform in the electrode finger crossing region Y, and the Q value can be improved. The characteristic adjustment region 6e and the characteristic adjustment region 6f may be provided in a part of the IDT electrodes 14a to 14f, or may be provided in the entire IDT electrode 14a to 14f.

<Fourth Embodiment>
A fourth embodiment of the elastic wave device package of the present invention will be described with reference to FIGS. 15, 16 and 17. In this embodiment, the characteristic adjusting region 6g and the characteristic adjusting region 6h are formed in a part of the resonator forming regions 14a to 14c. That is, as shown in FIGS. 16 and 17, a characteristic adjustment region 6g covered with the wall 6 is provided from the bus bar 13a to the tip portion 141b of the electrode finger 141. Similarly, a characteristic adjustment region 6h is provided so as to cover from the bus bar 13b to the tip 140b of the electrode finger 140 with the wall 6. In FIG. 17, a characteristic adjustment region 6g and a characteristic adjustment region 6h are provided from the bus bar 13a and the bus bar 13b over the width W3, respectively. That is, from the bus bar 13a, the tip portion 141b of the opposing electrode fingers 141 is covered with the wall 6 over the width W3. Similarly, from the bus bar 13b, the tip 140b of the opposing electrode fingers 140 is covered by the wall 6 over the width W3.

By providing such a characteristic adjustment region 6g and a characteristic adjustment region 6h, a piston structure can be realized, and the speed of surface acoustic waves at the tip 140b of the electrode finger 140 and 141b of the electrode finger 141 can be slowed down. .. The degree of realization of this piston structure is more effective than in the third embodiment. Therefore, it is possible to better achieve suppression of spurious due to leakage of surface acoustic waves from the intersection region Y of the electrode finger 140 and the electrode finger 141 to the bus bar 13a and the bus bar 13b side, and improvement of the Q value. The characteristic adjustment region 6g and the characteristic adjustment region 6h may be provided in a part of the IDT electrodes 14a to 14f, or may be provided in the entire IDT electrode 14a to 14f.

<Fifth Embodiment>
A fifth embodiment of the elastic wave device package of the present invention will be described with reference to FIGS. 18, 19, and 20. In the present embodiment, the wall 6 allows the tip 140b of the electrode finger 140 and the tip 141b of the electrode finger 141 of the IDT electrodes 14a to 14c in the resonator forming region 15a to be set in the propagation direction of the surface acoustic wave, that is, in the longitudinal direction. A characteristic adjustment region 6j and a characteristic adjustment region 6i covered with a band-shaped or linear wall 6 are formed.

In this way, if the characteristic adjusting region 6j and the characteristic adjusting region 6i are provided so that the tip portion 140b of the electrode finger 140 and the tip portion 141b of the electrode finger 141 are covered with the wall 6, respectively, a piston structure can be realized, and these tip portions 140b can be realized. And the velocity of the surface acoustic wave at the tip portion 141b can be reduced. Therefore, as in the fourth embodiment, the reduction of spurious and the improvement of the Q value by suppressing the leakage of the surface acoustic wave from the intersection region Y of the electrode finger 140 and the electrode finger 141 to the bus bar side are achieved. Can be done. The characteristic adjustment region 6j and the characteristic adjustment region 6i may be provided in a part of the IDT electrodes 14a to 14f, or may be provided in the entire IDT electrode 14a to 14f.

In the third to fifth embodiments described above, for example, as in the piston structure described in Japanese Patent No. 5221616, the thickness and width of the tip of the electrode finger may be changed, or another metal material may be used. It is possible to reduce the transverse mode spurious without adding it. That is, the piston structure can be realized only by changing the forming pattern of the wall 6 made of the photosensitive resin without adding a metal material, and the manufacturing price of the device can be suppressed.

FIG. 21 shows another example of an IDT electrode that can be used when carrying out the present invention. In this example, a short electrode finger 140c is formed between the electrode finger 140 and the electrode finger 140 extending from the bus bar 13a. Similarly, a short electrode finger 141c is formed between the electrode finger 141 and the electrode finger 141 extending from the bus bar 13b. The short electrode finger 140c extending from the bus bar 13a faces the tip portion 141b of the electrode finger 141 extending from the opposite bus bar 13b at a minute interval. Similarly, the short electrode finger 141c extending from the bus bar 13b faces the tip 140b of the electrode finger 140 extending from the opposite bus bar 13a at a minute interval.

If the electrode structure is as shown in FIG. 21, the effect of reducing spurious in the transverse mode can be obtained by the electrode structure itself. Such an electrode structure can also be adopted for the IDT electrodes of the first to fifth embodiments. The length of such a short electrode finger 140c and the electrode finger 141c may be formed so as to gradually change in the arrangement direction of the electrode finger 140 and the electrode finger 141. When the lengths of the electrode finger 140c and the electrode finger 141c are changed in this way, the lengths of the electrode finger 141 and the electrode finger 140 facing the electrode finger 140c and the electrode finger 141c, respectively, are also the lengths of the electrode finger 141 and the electrode finger. It changes in the arrangement direction of 140.

In the above embodiment, the chip scale package (CSP) to which the wafer level package (WLP) process is applied has been shown, but the present invention can also be implemented as a sealed chip component having a hollow structure other than the WLP. Is.

Although the present invention has been described above, when the present invention is carried out, various modifications and additions can be made without deviating from the gist of the present invention, not limited to the above-mentioned examples.

1 Elastic wave device package 2 Substrates 3, 3A to 3F Resonator forming region 4, 14a to 14f IDT electrode 5 Pad 6 Wall 6c to 6j Characteristic adjustment area 7 Roof 8 Cavity 9, 9A to 9F External connection terminals 13a to 13i Busbar 15a-15d Reflectors 140, 141 Electrodes Finger 150 Electrodes

Claims (10)

In a surface acoustic wave device package that includes a surface acoustic wave device,
Substrates containing piezoelectric materials and
A resonator forming region provided on the substrate and
A wall provided to form a closed region on the surface acoustic wave device including the substrate having the resonator forming region, and
A roof formed on the wall and forming a cavity together with the wall in the closed region is provided.
An elastic wave device package in which the wall is formed so as to cover a part or all of a resonator forming region provided on the substrate. In the elastic wave device package according to claim 1,
The resonator forming region is further provided with a redundantly added resonator forming region.
An elastic wave device package that loses its function as a resonator by selectively covering the resonator forming region added redundantly with a wall. In the elastic wave device package according to claim 2.
The resonator forming region covered by the wall is a region covering the IDT electrode.
An elastic wave device package in which a capacitor is formed by covering the IDT electrode with the wall. In the elastic wave device package according to claim 1,
The resonator forming region has an IDT electrode and a reflector, and has an IDT electrode and a reflector.
An elastic wave device package in which the wall is formed in a region covering a part of a reflector in one or a plurality of resonator forming regions. In the elastic wave device package according to claim 4,
The reflector has a bus bar arranged so as to face each other, and a plurality of electrodes provided by connecting both ends between the opposite bus bars.
The reflector is provided adjacent to the IDT electrode and is provided.
The reflector includes a first characteristic adjustment region and a second characteristic adjustment region as characteristic adjustment regions in which at least a part of the electrodes on the busbar side is covered with a wall.
An elastic wave device package in which the distance between the first characteristic adjustment region and the second characteristic adjustment region is formed so that the IDT electrode side is wider than the opposite side. In the elastic wave device package according to claim 1,
An IDT electrode is provided in the resonator forming region, and the IDT electrode is provided.
The IDT electrodes include a first bus bar and a second bus bar formed so as to face each other, a first electrode finger formed so as to extend from the first bus bar toward the second bus bar, and a first. It has a second electrode finger formed extending from the second bus bar toward the first bus bar.
The first bus bar and the second bus bar are covered with a wall.
An elastic wave device package including a first electrode finger and a region in which a part of the second electrode finger is covered with a wall as a characteristic adjustment region. In the elastic wave device package according to claim 6,
The characteristic adjustment region is an elastic wave device package formed so as to cover each base end portion of the first electrode finger and the second electrode finger with a wall. In the elastic wave device package according to claim 6,
The characteristic adjustment region includes a region covering from the first bus bar to the tip of the second electrode finger and a region covering from the second bus bar to the tip of the first electrode finger. Elastic wave device package. In the elastic wave device package according to claim 6,
The characteristic adjustment region is an elastic wave device package having a region covering the tip of the first electrode finger and a region covering the tip of the second electrode finger. In the elastic wave device package according to any one of claims 1 to 9.
An elastic wave device package in which at least one of the wall and the roof is made of a photosensitive resin.

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