JP2021076557A - Method for evaluating optical characteristics - Google Patents

Method for evaluating optical characteristics Download PDF

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JP2021076557A
JP2021076557A JP2019205627A JP2019205627A JP2021076557A JP 2021076557 A JP2021076557 A JP 2021076557A JP 2019205627 A JP2019205627 A JP 2019205627A JP 2019205627 A JP2019205627 A JP 2019205627A JP 2021076557 A JP2021076557 A JP 2021076557A
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periodic structure
defects
optical characteristics
diffraction
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JP7313682B2 (en
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信 清水
Makoto Shimizu
信 清水
浩雄 湯上
Hiroo Yugami
浩雄 湯上
シン リュウ
Sen Liu
シン リュウ
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Tohoku University NUC
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Abstract

To provide a method for evaluating optical characteristics in a shorter time at less cost.SOLUTION: The method for evaluating optical characteristics includes: a first step of causing light to enter a periodic structure and obtaining a diffraction image; a second step of adding information of a phase to the diffraction image and obtaining a reconstruction image formed by reconstructing the surface shape of the periodic structure; a third step of extracting defects in the reconstruction image and determining the ratio of the defects in the reconstruction image; and a fourth step of calculating the ratio of an effective region in the reconstruction image from the ratio of the defects and expecting an optical characteristic of the periodic structure from the ratio of the effective region.SELECTED DRAWING: Figure 1

Description

本発明は、光学特性の評価方法に関する。 The present invention relates to a method for evaluating optical characteristics.

光に対して自然界の物質にはない振る舞いをする人工物質としてメタマテリアルが知られている。物質の光学特性は、材料固有の特性と表面状態によって決定される。例えば、物質の表面に微小な単位構造を周期配列すると、物質は特異的な光学特性を示す。単位構造の幾何学的な大きさを設計すると、物質の光学特性を制御できる。メタマテリアルは、例えば、波長選択性を有する部材等に適用でき(例えば、特許文献1)、太陽電池等への適用が期待されている。 Metamaterials are known as artificial substances that behave in response to light, which are not found in substances in the natural world. The optical properties of a substance are determined by the material's unique properties and surface conditions. For example, when minute unit structures are periodically arranged on the surface of a substance, the substance exhibits specific optical properties. By designing the geometric size of the unit structure, the optical properties of the material can be controlled. The metamaterial can be applied to, for example, a member having wavelength selectivity (for example, Patent Document 1), and is expected to be applied to a solar cell or the like.

特開2010−027831号公報Japanese Unexamined Patent Publication No. 2010-027831

メタマテリアルの特異的な光学特性は、微小な単位構造の周期配列によって実現される。単位構造に欠陥が生じると、所望の光学特性が得られない場合がある。そのため、メタマテリアルを適切かつ効率的に評価できる方法が求められている。 The specific optical properties of metamaterials are realized by periodic arrays of minute unit structures. If the unit structure is defective, the desired optical characteristics may not be obtained. Therefore, there is a need for a method that can evaluate metamaterials appropriately and efficiently.

例えば、特許文献1は、走査型電子顕微鏡(SEM)を用いてメタマテリアルの表面状態を観測し、赤外線吸収スペクトルによりメタマテリアルの光学特性を評価している。赤外線吸収スペクトルは、フーリエ変換赤外分光光度計(FT−IR)を用いて測定できる。 For example, Patent Document 1 observes the surface state of a metamaterial using a scanning electron microscope (SEM) and evaluates the optical characteristics of the metamaterial by an infrared absorption spectrum. The infrared absorption spectrum can be measured using a Fourier transform infrared spectrophotometer (FT-IR).

SEMは、微小な領域の構造を観測するための装置であり、大面積の評価に適していない。またFT−IRは、移動鏡を移動させながら赤外光を干渉させるため、大面積を素早く評価する測定方法として適していない。そのため、例えば、量産ラインにSEMやFT−IRを組み込み、大面積の測定対象の評価を行うことは現実的ではない。 The SEM is a device for observing the structure of a minute region and is not suitable for evaluation of a large area. Further, FT-IR is not suitable as a measurement method for quickly evaluating a large area because it interferes with infrared light while moving the moving mirror. Therefore, for example, it is not realistic to incorporate SEM or FT-IR into a mass production line to evaluate a large area measurement target.

本発明は上記問題に鑑みてなされたものであり、安価で、評価にかかる時間を短縮できる光学特性の評価方法を提供することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to provide an inexpensive method for evaluating optical characteristics that can shorten the time required for evaluation.

本発明は、上記課題を解決するため、以下の手段を提供する。 The present invention provides the following means for solving the above problems.

(1)第1の態様にかかる光学特性の評価方法は、周期構造体に光を入射し、回折像を得る第1工程と、前記回折像に位相の情報を加え、前記周期構造体の表面形状を再構築した再構築像を得る第2工程と、前記再構築像における欠陥を抽出し、前記再構築像における前記欠陥の割合を求める第3工程と、前記欠陥の割合から前記再構築像における有効領域の割合を算出し、前記有効領域の割合から前記周期構造体の光学特性を予想する第4工程と、を有する。 (1) The method for evaluating optical characteristics according to the first aspect is a first step of incident light on a periodic structure to obtain a diffraction image and adding phase information to the diffraction image to add phase information to the surface of the periodic structure. The second step of obtaining a reconstructed image in which the shape is reconstructed, the third step of extracting defects in the reconstructed image and obtaining the ratio of the defects in the reconstructed image, and the reconstructed image from the ratio of the defects. It has a fourth step of calculating the ratio of the effective region in the above and predicting the optical characteristics of the periodic structure from the ratio of the effective region.

(2)上記態様にかかる光学特性の評価方法の前記第2工程において、前記回折像から実像への逆フーリエ変換と前記実像から前記回折像へのフーリエ変換とを、回折波の位相を変えながら複数回繰り返し、前記位相の情報を最適化してもよい。 (2) In the second step of the method for evaluating optical characteristics according to the above aspect, the inverse Fourier transform from the diffraction image to the real image and the Fourier transform from the real image to the diffraction image are performed while changing the phase of the diffracted wave. The phase information may be optimized by repeating it a plurality of times.

(3)上記態様にかかる光学特性の評価方法において、前記第1工程は、前記周期構造体で反射した光の回折パターンを投影面に投影する工程と、前記投影面の垂線方向に対して所定の仰角の位置に配置した検出器で、前記投影面に投影された投影像を検出する工程と、前記投影像を前記検出器が配置された仰角に基づき補正し、前記回折像を得る工程と、を有してもよい。 (3) In the method for evaluating optical characteristics according to the above aspect, the first step is a step of projecting a diffraction pattern of light reflected by the periodic structure onto a projection surface, and a predetermined step with respect to the perpendicular direction of the projection surface. A step of detecting a projected image projected on the projection surface with a detector arranged at the position of the elevation angle of the above, and a step of correcting the projected image based on the elevation angle of the detector and obtaining the diffraction image. , May have.

(4)上記態様にかかる光学特性の評価方法において、前記第3工程は、前記再構築像における単位構造の長さ、周囲長及び面積から前記欠陥を判別する工程と、前記欠陥と判断された前記単位構造の数を、前記欠陥がない理想状態における前記単位構造の数で割り、前記欠陥の割合を求める工程と、を有してもよい。 (4) In the method for evaluating optical characteristics according to the above aspect, the third step is a step of discriminating the defect from the length, peripheral length, and area of the unit structure in the reconstructed image, and is determined to be the defect. It may have a step of dividing the number of the unit structures by the number of the unit structures in an ideal state without the defects to obtain the ratio of the defects.

上記態様にかかる光学特性の評価方法によれば、安価で、評価にかかる時間を短縮できる。 According to the method for evaluating optical characteristics according to the above aspect, it is inexpensive and the time required for evaluation can be shortened.

第1実施形態に係る光学特性の評価方法における第1工程を説明するための模式図である。It is a schematic diagram for demonstrating the 1st step in the evaluation method of the optical property which concerns on 1st Embodiment. 第1実施形態に係る光学特性の評価方法で評価される周期構造体の平面図である。It is a top view of the periodic structure evaluated by the evaluation method of the optical property which concerns on 1st Embodiment. 第1実施形態に係る光学特性の評価方法における第2工程を説明するための模式図である。It is a schematic diagram for demonstrating the 2nd step in the evaluation method of the optical property which concerns on 1st Embodiment. 周期構造体の平面図と、周期構造体の回折像と、回折像からの再構築像の一例である。It is an example of a plan view of a periodic structure, a diffraction image of the periodic structure, and a reconstruction image from the diffraction image. 周期構造体の平面図と、周期構造体の回折像と、回折像からの再構築像の一例である。It is an example of a plan view of a periodic structure, a diffraction image of the periodic structure, and a reconstruction image from the diffraction image. 実施例1の周期構造体の表面像と、実施例1の周期構造体の再構築像である。It is the surface image of the periodic structure of Example 1 and the reconstruction image of the periodic structure of Example 1. 実施例1の周期構造体の光学特性の評価結果である。It is an evaluation result of the optical property of the periodic structure of Example 1. 実施例2の周期構造体の表面像と、実施例1の周期構造体の再構築像である。It is the surface image of the periodic structure of Example 2 and the reconstruction image of the periodic structure of Example 1. 実施例2の周期構造体の光学特性の評価結果である。It is an evaluation result of the optical property of the periodic structure of Example 2.

以下、本実施形態について、図を適宜参照しながら詳細に説明する。以下の説明で用いる図面は、本発明の特徴をわかりやすくするために便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などは実際とは異なっていることがある。以下の説明において例示される材料、寸法等は一例であって、本発明はそれらに限定されるものではなく、その要旨を変更しない範囲で適宜変更して実施することが可能である。 Hereinafter, the present embodiment will be described in detail with reference to the drawings as appropriate. The drawings used in the following description may be enlarged for convenience in order to make the features of the present invention easy to understand, and the dimensional ratios of the respective components may differ from the actual ones. is there. The materials, dimensions, etc. exemplified in the following description are examples, and the present invention is not limited thereto, and the present invention can be appropriately modified without changing the gist thereof.

第1実施形態に係る光学特性の評価方法は、第1工程と第2工程と第3工程と第4工程とを有する。第1工程は、周期構造体に光を入射し、回折像を得る工程である。第2工程は、回折像に位相の情報を加え、周期構造体の形状を再構築した再構築像を得る工程である。第3工程は、再構築像における欠陥を抽出し、再構築像における欠陥の割合を求める工程である。第4工程は、欠陥の割合から再構築像における有効領域の割合を算出し、有効領域の割合から周期構造体の光学特性を予想する工程である。以下、それぞれの工程について詳述する。 The method for evaluating optical characteristics according to the first embodiment includes a first step, a second step, a third step, and a fourth step. The first step is a step of incident light on the periodic structure to obtain a diffraction image. The second step is a step of adding phase information to the diffraction image to obtain a reconstructed image in which the shape of the periodic structure is reconstructed. The third step is a step of extracting defects in the reconstructed image and obtaining the ratio of defects in the reconstructed image. The fourth step is a step of calculating the ratio of the effective region in the reconstructed image from the ratio of defects and predicting the optical characteristics of the periodic structure from the ratio of the effective region. Hereinafter, each step will be described in detail.

「第1工程」
図1は、第1実施形態に係る光学特性の評価方法における第1工程を説明するための模式図である。図1に示す評価装置100は、光源20とスクリーン30と検出器40とを有し、周期構造体10の回折像を得る装置である。光源20から周期構造体10へ向かう方向をy方向、y方向と直交する面の一方向をx方向、x方向及びy方向と直交する方向をz方向とする。
"First step"
FIG. 1 is a schematic diagram for explaining a first step in the method for evaluating optical characteristics according to the first embodiment. The evaluation device 100 shown in FIG. 1 is a device having a light source 20, a screen 30, and a detector 40 to obtain a diffraction image of the periodic structure 10. The direction from the light source 20 toward the periodic structure 10 is the y direction, one direction of the plane orthogonal to the y direction is the x direction, and the x direction and the direction orthogonal to the y direction are the z directions.

図2は、第1実施形態に係る光学特性の評価方法で評価される周期構造体10の平面図である。図2は、周期構造体10のy方向からの平面図である。周期構造体10は、メタマテリアルの一態様である。周期構造体10は、複数の単位構造11を有し、単位構造11が周期的に配列している。図2において単位構造11は、x方向及びz方向に行列状に配列している。単位構造11は、例えば、周期構造体10の表面から窪む穴である。単位構造11の1辺のサイズは、例えば、100nm以上100μm以下である。図2では、単位構造11の平面視形状を四角形の場合を例示したが、単位構造11の形状は問わない。 FIG. 2 is a plan view of the periodic structure 10 evaluated by the method for evaluating optical characteristics according to the first embodiment. FIG. 2 is a plan view of the periodic structure 10 from the y direction. The periodic structure 10 is an aspect of a metamaterial. The periodic structure 10 has a plurality of unit structures 11, and the unit structures 11 are arranged periodically. In FIG. 2, the unit structures 11 are arranged in a matrix in the x-direction and the z-direction. The unit structure 11 is, for example, a hole recessed from the surface of the periodic structure 10. The size of one side of the unit structure 11 is, for example, 100 nm or more and 100 μm or less. In FIG. 2, the case where the plan view shape of the unit structure 11 is a quadrangle is illustrated, but the shape of the unit structure 11 does not matter.

光源20は、例えば、可視光又は赤外光を周期構造体10に照射する。光源20は、例えば、連続波を発振するCWレーザーである。光源20から周期構造体10に照射する光L1の波長は、周期構造体10の周期構造のサイズに合わせて設定でき、例えば、532nmである。光源20から発振する光L1のスポット径は、例えば、1mm以上10mm以下である。 The light source 20 irradiates the periodic structure 10 with visible light or infrared light, for example. The light source 20 is, for example, a CW laser that oscillates a continuous wave. The wavelength of the light L1 emitted from the light source 20 to the periodic structure 10 can be set according to the size of the periodic structure of the periodic structure 10, and is, for example, 532 nm. The spot diameter of the light L1 oscillating from the light source 20 is, for example, 1 mm or more and 10 mm or less.

スクリーン30は、x方向及びz方向に広がる。スクリーン30には開口32があり、開口32を通って光L1は周期構造体10に照射される。スクリーン30は、投影面の一例である。 The screen 30 spreads in the x-direction and the z-direction. The screen 30 has an opening 32, and the light L1 is irradiated to the periodic structure 10 through the opening 32. The screen 30 is an example of a projection surface.

検出器40は、例えば、カメラ等の撮像素子である。検出器40は、光L1の入射方向に対して周期構造体10より後方で、y方向から仰角θ傾いた位置にある。仰角θは、例えば、15°である。 The detector 40 is, for example, an image sensor such as a camera. The detector 40 is located behind the periodic structure 10 with respect to the incident direction of the light L1 and at an elevation angle θ tilted from the y direction. The elevation angle θ is, for example, 15 °.

第1工程では、周期構造体10の回折像を得る。まず、光源20から光L1を周期構造体10に照射する。光L1は、スクリーン30の開口32を通って、周期構造体10の表面に入射する。光L1は、周期構造体10の表面で反射する。反射した回折光L2は、スクリーン30に投影される。スクリーン30に投影された投影像は、周期構造体10の表面の周期構造に応じた回折パターンを示す。 In the first step, a diffraction image of the periodic structure 10 is obtained. First, the periodic structure 10 is irradiated with light L1 from the light source 20. The light L1 enters the surface of the periodic structure 10 through the opening 32 of the screen 30. The light L1 is reflected on the surface of the periodic structure 10. The reflected diffracted light L2 is projected on the screen 30. The projected image projected on the screen 30 shows a diffraction pattern corresponding to the periodic structure on the surface of the periodic structure 10.

次いで、スクリーン30に投影された投影像を、検出器40で検知する。検出器40は、スクリーン30から反射する光L3を検知し、投影像の強度分布を撮像する。検出器40は、スクリーン30の垂線方向(y方向)に対して仰角θ傾いた位置にあるため、検出器40で検知される像は、スクリーン30に投影された実際の投影像に対して歪んでいる。検出器40で検知される像を仰角θに基づいて画像補正することで、回折像は中心に対して対称な回折パターンとなる。この補正後の回折パターンが、周期構造体10の回折像である。 Next, the detector 40 detects the projected image projected on the screen 30. The detector 40 detects the light L3 reflected from the screen 30 and images the intensity distribution of the projected image. Since the detector 40 is tilted by an elevation angle θ with respect to the perpendicular direction (y direction) of the screen 30, the image detected by the detector 40 is distorted with respect to the actual projected image projected on the screen 30. I'm out. By image-correcting the image detected by the detector 40 based on the elevation angle θ, the diffraction image becomes a diffraction pattern symmetrical with respect to the center. The diffraction pattern after this correction is a diffraction image of the periodic structure 10.

「第2工程」
次いで、第2工程では、第1工程で得られた回折像に位相の情報を加え、周期構造体10の形状を再構築した再構築像を得る。回折像には、回折光L2の強度の情報は残るが位相の情報は残らない。回折像から周期構造体10の表面形状を再構築するために、回折像に位相の情報を加える。
"Second step"
Next, in the second step, phase information is added to the diffraction image obtained in the first step to obtain a reconstructed image in which the shape of the periodic structure 10 is reconstructed. In the diffraction image, information on the intensity of the diffracted light L2 remains, but information on the phase does not remain. In order to reconstruct the surface shape of the periodic structure 10 from the diffraction image, phase information is added to the diffraction image.

まず回折像の生データから周期構造体10の表面形状以外の原因に伴う外乱を除去する。外乱は、例えば、スクリーン30の開口32による光L1の散乱や、光源20及び検出器40のガウシアンノイズである。外乱は、暗視野のバックグラウンドを差し引くことで、除去できる。ガウシアンノイズは、ガウシアンフィルターを用いることで除去できる。 First, the disturbance caused by the cause other than the surface shape of the periodic structure 10 is removed from the raw data of the diffraction image. The disturbance is, for example, scattering of light L1 by the opening 32 of the screen 30 or Gaussian noise of the light source 20 and the detector 40. Disturbances can be removed by subtracting the darkfield background. Gaussian noise can be removed by using a Gaussian filter.

次いで、回折像に位相の情報を加える。図3は、第1実施形態に係る光学特性の評価方法の第2工程を説明するための模式図である。回折像に与える位相の情報は、回折像G’から実像gk’への逆フーリエ変換と実像gから回折像Gへのフーリエ変換とを、回折像G’に与える回折波の位相を変えながら複数回繰り返し、最適化することが好ましい。 Next, phase information is added to the diffraction image. FIG. 3 is a schematic diagram for explaining a second step of the method for evaluating optical characteristics according to the first embodiment. Information of the phase to be given to the diffraction image, the Fourier transform from the inverse Fourier transform and real g k to 'real g k from' diffraction image G on the diffraction image G k, the phase of the diffracted wave applied to the diffraction image G ' It is preferable to repeat it a plurality of times while changing and optimize it.

まず上述のように、第1工程で得られた回折像G’は、位相の情報を有さない。そこで、回折像G’にランダムな位相を加え、逆フーリエ変換を行う。逆フーリエ変換を行うと実像gk’が得られる。次いで、実像gk’に実空間における拘束条件を課すことで、実像gk’が実像gに補正される。実空間における拘束条件は、例えば、試料が存在するであろうと推定される領域外では電子密度がゼロであることや、物理的に電子密度が負にならないということである。次いで、実像gをフーリエ変換し、回折像Gが得られる。回折像Gに虚数空間における拘束条件を課すことで、回折像Gが回折像G’に補正される。 First, as described above, the diffraction image G'obtained in the first step does not have phase information. Therefore, a random phase is added to the diffraction image G'and an inverse Fourier transform is performed. The real image g k'is obtained by performing the inverse Fourier transform. Then, 'by imposing a constraint in the real space, real image g k' real image g k is corrected in real g k. The constraints in real space are, for example, that the electron density is zero outside the region where the sample is presumed to exist, and that the electron density is not physically negative. Next, the real image g k is Fourier transformed to obtain a diffraction image G k. The diffraction image G k by imposing a constraint in the imaginary space, the diffraction image G k is corrected to the diffraction image G '.

第1工程で得られた回折像G’と、ランダムな位相を与え計算によって求められる回折像G’とは、ランダムに与えられた位相が正しいほど一致する。上記のフーリエ変換と逆フーリエ変換とを与える位相を変えながら複数回行い、第1工程で得られた回折像G’とランダムな位相を与え計算によって求められる回折像G’とのずれを小さくしていくことで、位相が最適化される。フーリエ変換と逆フーリエ変換との繰り返しは、例えば1500回以上行う。位相の最適化は、機械学習により効率化してもよい。 The diffraction image G'obtained in the first step and the diffraction image G'obtained by giving a random phase and being calculated coincide with each other so that the randomly given phases are correct. The above Fourier transform and inverse Fourier transform are performed a plurality of times while changing the phase to be given, and the deviation between the diffraction image G'obtained in the first step and the diffraction image G'obtained by giving a random phase is reduced. By going, the phase is optimized. The Fourier transform and the inverse Fourier transform are repeated, for example, 1500 times or more. Phase optimization may be streamlined by machine learning.

図4及び図5は、周期構造体10の平面図と、周期構造体10の回折像と、回折像からの再構築像50の一例である。図4は、欠陥の無い理想的な周期構造体10の結果であり、図5は、付着物12により汚染された欠陥を有する周期構造体10の結果である。図4(a)及び図5(a)は、周期構造体10のSEM像である。図4(b)及び図5(b)は、周期構造体10の回折像である。図4(c)及び図5(c)は、周期構造体10の再構築像50である。 4 and 5 are an example of a plan view of the periodic structure 10, a diffraction image of the periodic structure 10, and a reconstruction image 50 from the diffraction image. FIG. 4 shows the result of the ideal periodic structure 10 without defects, and FIG. 5 shows the result of the periodic structure 10 having defects contaminated by the deposit 12. 4 (a) and 5 (a) are SEM images of the periodic structure 10. 4 (b) and 5 (b) are diffraction images of the periodic structure 10. 4 (c) and 5 (c) are reconstructed images 50 of the periodic structure 10.

図4(b)及び図5(b)は、いずれも回折スポットSpが規則的に配列した回折パターンを示す。図4(b)に示す回折像と図5(b)に示す回折像とを比較すると、図5(b)に示す回折像は、図4(b)に示す回折像と比較して回折スポットSpの周囲に光が散乱している。付着物12により回折パターンが乱れたためと考えられる。 Both FIGS. 4 (b) and 5 (b) show diffraction patterns in which diffraction spots Sp are regularly arranged. Comparing the diffraction image shown in FIG. 4 (b) with the diffraction image shown in FIG. 5 (b), the diffraction image shown in FIG. 5 (b) has a diffraction spot as compared with the diffraction image shown in FIG. 4 (b). Light is scattered around Sp. It is considered that the diffraction pattern was disturbed by the deposit 12.

図4(c)及び図5(c)は、これらの回折パターンを基に、周期構造体10を再構築した再構築像50である。図4(c)の再構築像50は、単位構造51が周期的に配列しており、図4(a)で示す周期構造体10の表面形状を適切に再構築している。これに対し、図5(c)の再構築像50は、単位構造51が周期的に配列しているが、欠陥52,53,54がある。図5(a)で示す周期構造体10は欠陥を有しており、図5(c)に示す再構築像は、周期構造体10の表面形状を適切に再構築している。なお、SEMを撮影するピンポイントの回折パターンを得ることは難しく、図5(a)の平面図と図5(c)の再構築像50とは完全一致はしていない。 4 (c) and 5 (c) are reconstructed images 50 in which the periodic structure 10 is reconstructed based on these diffraction patterns. In the reconstructed image 50 of FIG. 4 (c), the unit structures 51 are periodically arranged, and the surface shape of the periodic structure 10 shown in FIG. 4 (a) is appropriately reconstructed. On the other hand, in the reconstructed image 50 of FIG. 5C, the unit structures 51 are arranged periodically, but there are defects 52, 53, 54. The periodic structure 10 shown in FIG. 5A has a defect, and the reconstructed image shown in FIG. 5C appropriately reconstructs the surface shape of the periodic structure 10. It is difficult to obtain a pinpoint diffraction pattern for photographing the SEM, and the plan view of FIG. 5 (a) and the reconstructed image 50 of FIG. 5 (c) do not completely match.

上述のように、第1工程及び第2工程を行うことで、欠陥を有さない場合も欠陥を有する場合も、周期構造体10の表面形状を回折像から再構築することができた。 As described above, by performing the first step and the second step, the surface shape of the periodic structure 10 can be reconstructed from the diffraction image regardless of whether it has a defect or a defect.

「第3工程」
第3工程では、再構築像50における欠陥52,53,54を抽出し、再構築像50における欠陥52,53,54の割合を求める。
"Third step"
In the third step, the defects 52, 53, 54 in the reconstructed image 50 are extracted, and the ratio of the defects 52, 53, 54 in the reconstructed image 50 is obtained.

欠陥52は、隣接する単位構造51が接続されたものである。欠陥53は、単位構造51のサイズが所定のサイズより小さいものである。欠陥54は、単位構造51が変形したものである。欠陥52,53,54は、再構築像50を所定の閾値で画像処理することで、欠陥の無い理想的な単位構造51と区別される。画像処理は、理想的には単位構造51に対応する部分(図4(c)及び図5(c)における黒色部分)の面積、周囲長、長さの各パラメータに閾値を設け、閾値の範囲内に入らないものを欠陥52,53,54と判定する。 The defect 52 is formed by connecting adjacent unit structures 51. The defect 53 is such that the size of the unit structure 51 is smaller than a predetermined size. The defect 54 is a modification of the unit structure 51. The defects 52, 53, and 54 are distinguished from the ideal unit structure 51 without defects by image processing the reconstructed image 50 with a predetermined threshold value. In the image processing, ideally, threshold values are set for each parameter of the area, the peripheral length, and the length of the portion (black portion in FIGS. 4C and 5C) corresponding to the unit structure 51, and the threshold range is set. Those that do not fit inside are determined to be defects 52, 53, 54.

例えば、再構築像50の単位構造51に対応する部分の長さの閾値を、実際の周期構造体10の単位構造11の1辺の1/2倍以上2倍以下と設定する。欠陥52は1辺の長さが2倍以上となる可能性が高く、欠陥52を区別できる。また欠陥53は1辺の長さが1/2倍以下となる可能性が高く、欠陥53を区別できる。 For example, the threshold value of the length of the portion corresponding to the unit structure 51 of the reconstructed image 50 is set to be 1/2 times or more and 2 times or less of one side of the unit structure 11 of the actual periodic structure 10. The defect 52 is likely to have a side length of twice or more, and the defect 52 can be distinguished. Further, the defect 53 is likely to have a side length of 1/2 times or less, and the defect 53 can be distinguished.

また例えば、再構築像50の単位構造51に対応する部分の周囲長の閾値を、実際の周期構造体10の単位構造11の周囲長の1/2倍以上2倍以下と設定する。欠陥52,54は、周囲長が2倍以上となる可能性が高く、欠陥52,54を区別できる。また欠陥53は周囲長が1/2倍以下となる可能性が高く、欠陥53を区別できる。 Further, for example, the threshold value of the peripheral length of the portion corresponding to the unit structure 51 of the reconstructed image 50 is set to 1/2 times or more and 2 times or less the peripheral length of the unit structure 11 of the actual periodic structure 10. Defects 52 and 54 are likely to have a circumference that is more than doubled, and defects 52 and 54 can be distinguished. Further, the defect 53 is likely to have a peripheral length of 1/2 times or less, and the defect 53 can be distinguished.

また例えば、再構築像50の単位構造51に対応する部分の面積の閾値を、実際の周期構造体10の単位構造11の面積の1/2倍以上2倍以下と設定する。欠陥52,54は、面積が2倍以上となる可能性が高く、欠陥52,54を区別できる。また欠陥53は面積が1/2倍以下となる可能性が高く、欠陥53を区別できる。 Further, for example, the threshold value of the area of the portion corresponding to the unit structure 51 of the reconstructed image 50 is set to 1/2 or more and 2 times or less the area of the unit structure 11 of the actual periodic structure 10. The defects 52 and 54 are likely to have more than double the area, and the defects 52 and 54 can be distinguished. Further, the defect 53 is likely to have an area of 1/2 times or less, and the defect 53 can be distinguished.

上記の手順を経ることで、理想的な単位構造51と欠陥52,53,54とを区別できる。そして、欠陥52,53,54と判断された単位構造の数を、欠陥がない理想状態における単位構造51の数で割り、欠陥52,53,54の割合を求める。 By going through the above procedure, the ideal unit structure 51 and the defects 52, 53, 54 can be distinguished. Then, the number of unit structures determined to be defects 52, 53, 54 is divided by the number of unit structures 51 in the ideal state without defects to obtain the ratio of defects 52, 53, 54.

ここで、欠陥52は、n個(nは整数)の単位構造が接続された欠陥であり、欠陥の数は一つである。しかしながら、本来であればn個の単位構造である部分であり、n個の単位構造のそれぞれが欠陥として判定されたとして、欠陥52と判断された単位構造の数はn個とする。また「欠陥がない理想状態における単位構造51の数」とは、周期構造体10の全面に欠陥がない場合に抽出される単位構造51の数であり、例えば図5(c)における欠陥がない部分の単位構造51の数ではない。 Here, the defect 52 is a defect in which n unit structures (n is an integer) are connected, and the number of defects is one. However, it is a part that originally has n unit structures, and assuming that each of the n unit structures is determined as a defect, the number of unit structures determined to be defects 52 is n. The "number of unit structures 51 in an ideal state without defects" is the number of unit structures 51 extracted when there are no defects on the entire surface of the periodic structure 10, for example, there are no defects in FIG. 5 (c). It is not the number of unit structures 51 of the part.

「第4工程」
第4工程は、欠陥の割合に基づき、周期構造体10の光学特性を予想する。まず、1−「欠陥の割合」を行い、周期構造体10の有効領域の割合を算出する。周期構造体10の有効領域は欠陥がなく、理想的な光学特性を示すと仮定される。したがって、欠陥がない理想状態の周期構造体の光学特性と有効領域の割合との積を行うだけで、周期構造体10の光学特性が予想できる。
"Fourth step"
The fourth step predicts the optical properties of the periodic structure 10 based on the percentage of defects. First, 1- "Percentage of defects" is performed to calculate the ratio of the effective region of the periodic structure 10. It is assumed that the effective region of the periodic structure 10 is flawless and exhibits ideal optical properties. Therefore, the optical characteristics of the periodic structure 10 can be predicted only by multiplying the optical characteristics of the periodic structure in the ideal state without defects and the ratio of the effective region.

上述のように、第1実施形態に係る光学特性の評価方法は、第1工程で回折像を測定し、その後の第2工程から第4工程はコンピュータ等を用いた計算を行うことで、周期構造体10の光学特性を予想している。そのため、第1実施形態に係る光学特性の評価方法は、測定系として回折像を得るための簡便な評価装置100を準備するだけでよく、安価である。また、第1実施形態に係る光学特性の評価方法は、光学特性を評価するために要する時間を短縮でき、量産等にも適用可能である。 As described above, in the method for evaluating the optical characteristics according to the first embodiment, the diffraction image is measured in the first step, and the subsequent second to fourth steps are calculated by using a computer or the like. The optical characteristics of the structure 10 are expected. Therefore, the method for evaluating the optical characteristics according to the first embodiment is inexpensive because it is only necessary to prepare a simple evaluation device 100 for obtaining a diffraction image as a measurement system. Further, the method for evaluating optical characteristics according to the first embodiment can shorten the time required for evaluating optical characteristics and can be applied to mass production and the like.

(実施例1)
まず図1に示す評価装置100を準備した。光源20は、波長が532nmで出力9.62mWのTTL変調のCWレーザーを用いた。レーザーのスポット径は、略1mmとした。また検出器40は、y方向に対して仰角15°の位置に配置した。検出器40の露光は0.2秒とした。
(Example 1)
First, the evaluation device 100 shown in FIG. 1 was prepared. As the light source 20, a TTL-modulated CW laser having a wavelength of 532 nm and an output of 9.62 mW was used. The spot diameter of the laser was approximately 1 mm. The detector 40 was arranged at an elevation angle of 15 ° with respect to the y direction. The exposure of the detector 40 was set to 0.2 seconds.

実施例1の周期構造体は、Si基板に反応性エッチング(RIE)により周期的なマイクロキャビティを形成し、その上にPtをスパッタリングでコーティングしたものとした。周期構造体の隣接する単位構造のピッチは2.6μm、開口の一辺は1.6μm、開口の深さは5μmとした。そして、周期構造体の表面を汚染し、欠陥を設けた。図6(a)は、実施例1の周期構造体の表面のSEM像である。 In the periodic structure of Example 1, a periodic microcavity was formed on a Si substrate by reactive etching (RIE), and Pt was coated on the periodic microcavity by sputtering. The pitch of the adjacent unit structures of the periodic structure was 2.6 μm, one side of the opening was 1.6 μm, and the depth of the opening was 5 μm. Then, the surface of the periodic structure was contaminated and defects were provided. FIG. 6A is an SEM image of the surface of the periodic structure of Example 1.

次いで、周期構造体を評価装置100に設置し、回折像を得た。そして回折像から周期構造体の再構築像を作製した。図6(b)は、実施例1の周期構造体の再構築像である。 Next, the periodic structure was installed in the evaluation device 100, and a diffraction image was obtained. Then, a reconstructed image of the periodic structure was prepared from the diffraction image. FIG. 6B is a reconstructed image of the periodic structure of Example 1.

次いで、再構築像の単位構造の長さ、周囲長及び面積の閾値を設定し、画像処理を行い、再構築像における欠陥の割合を求めた。長さの閾値は、実際の周期構造体の単位構造の1辺の1/2倍以上2倍以下と設定した。周囲長の閾値は、実際の周期構造体の単位構造の周囲長の1/2倍以上2倍以下と設定した。面積の閾値は、実際の周期構造体の単位構造の面積の1/2倍以上2倍以下と設定した。図6(b)では、欠陥として判定された部分を白色で図示している。実施例1の再構築像における欠陥の割合は、25.7%であった。再構築像の欠陥の割合は、実際の周期構造体における欠陥の割合と近い値を示した。 Next, the thresholds of the unit structure length, the perimeter, and the area of the reconstructed image were set, and image processing was performed to determine the proportion of defects in the reconstructed image. The length threshold was set to be 1/2 times or more and 2 times or less of one side of the unit structure of the actual periodic structure. The threshold value of the perimeter was set to be 1/2 times or more and 2 times or less the perimeter of the unit structure of the actual periodic structure. The area threshold was set to be 1/2 times or more and 2 times or less the area of the unit structure of the actual periodic structure. In FIG. 6B, the portion determined as a defect is shown in white. The percentage of defects in the reconstructed image of Example 1 was 25.7%. The percentage of defects in the reconstructed image showed a value close to the percentage of defects in the actual periodic structure.

次いで、欠陥の割合から有効領域の割合を算出した。有効領域の割合は、74.9%であった。図7は、実施例1の周期構造体の光学特性の評価結果である。図7において「Designed」は欠陥の無い理想状態の光学特性であり、「Measured」は実際の周期構造体の光学特性をFT−IRで測定した実測値であり、「Calculation」は上記の有効領域の割合から算出した値であり、「Damage」は欠陥部分の光学特性を換算したものである。欠陥部分の光学特性は、基板のPtの光学特性から光学的な特性の変調が生じないものとして扱った。 Next, the ratio of the effective region was calculated from the ratio of defects. The proportion of effective domain was 74.9%. FIG. 7 is an evaluation result of the optical characteristics of the periodic structure of Example 1. In FIG. 7, “Designed” is an optical characteristic in an ideal state without defects, “Measured” is an actually measured value obtained by measuring the optical characteristic of an actual periodic structure by FT-IR, and “Calculation” is the above effective region. It is a value calculated from the ratio of, and "Damage" is a conversion of the optical characteristics of the defective part. The optical characteristics of the defective portion were treated as assuming that the optical characteristics were not modulated from the optical characteristics of Pt on the substrate.

図7に示すように、「Measured」と「Calculation」とは非常に近い値を示しており、本実施形態に係る光学特性の評価方法が機能していることが分かる。 As shown in FIG. 7, “Measured” and “Calculation” show very close values, and it can be seen that the method for evaluating the optical characteristics according to the present embodiment is functioning.

(実施例2)
実施例2は、測定する周期構造体を変えたこと以外は、実施例1と同じとした。
(Example 2)
Example 2 was the same as that of Example 1 except that the periodic structure to be measured was changed.

実施例2の周期構造体は、Si基板に反応性エッチング(RIE)により周期的なマイクロキャビティを形成し、その上にPtをスパッタリングでコーティングしたものとした。周期構造体の隣接する単位構造のピッチは2.7μm、開口の一辺は2.1μm、開口の深さは5μmとした。そして、周期構造体の一部に開口が設けられていない領域があった。図8(a)は、実施例2の周期構造体の表面のSEM像である。 In the periodic structure of Example 2, a periodic microcavity was formed on a Si substrate by reactive etching (RIE), and Pt was coated on the periodic microcavity by sputtering. The pitch of the adjacent unit structures of the periodic structure was 2.7 μm, one side of the opening was 2.1 μm, and the depth of the opening was 5 μm. Then, there was a region in which an opening was not provided in a part of the periodic structure. FIG. 8A is an SEM image of the surface of the periodic structure of Example 2.

次いで、周期構造体を評価装置100に設置し、回折像を得た。そして回折像から周期構造体の再構築像を作製した。図8(b)は、実施例2の周期構造体の再構築像である。図8(b)では、欠陥として判定された部分を白色で図示している。 Next, the periodic structure was installed in the evaluation device 100, and a diffraction image was obtained. Then, a reconstructed image of the periodic structure was prepared from the diffraction image. FIG. 8B is a reconstructed image of the periodic structure of Example 2. In FIG. 8B, the portion determined as a defect is shown in white.

実施例2の再構築像における欠陥の割合は、6.6%であった。再構築像の欠陥の割合は、実際の周期構造体における欠陥の割合と近い値を示した。有効領域の割合は、93.4%であった。 The percentage of defects in the reconstructed image of Example 2 was 6.6%. The percentage of defects in the reconstructed image showed a value close to the percentage of defects in the actual periodic structure. The proportion of effective domain was 93.4%.

図9は、実施例2の周期構造体の光学特性の評価結果である。図9において「Designed」は欠陥の無い理想状態の光学特性であり、「Measured」は実際の周期構造体の光学特性をFT−IRで測定した実測値であり、「Calculation」は上記の有効領域の割合から算出した値であり、「Damage」は欠陥部分の光学特性である。 FIG. 9 is an evaluation result of the optical characteristics of the periodic structure of Example 2. In FIG. 9, "Designed" is an optical characteristic in an ideal state without defects, "Measured" is an actually measured value obtained by measuring the optical characteristic of an actual periodic structure by FT-IR, and "Calculation" is the above effective region. It is a value calculated from the ratio of, and "Damage" is the optical characteristic of the defective part.

図9に示すように、「Measured」と「Calculation」とは非常に近い値を示しており、本実施形態に係る光学特性の評価方法が機能していることが分かる。 As shown in FIG. 9, “Measured” and “Calculation” show very close values, and it can be seen that the method for evaluating the optical characteristics according to the present embodiment is functioning.

10 周期構造体
11、51 単位構造
12 付着物
20 光源
30 スクリーン
32 開口
40 検出器
50 再構築像
52、53、54 欠陥
100 評価装置
L1、L3 光
L2 回折光
Sp 回折スポット
10 Periodic structure 11, 51 Unit structure 12 Adhesion 20 Light source 30 Screen 32 Aperture 40 Detector 50 Reconstructed image 52, 53, 54 Defect 100 Evaluation device L1, L3 Light L2 Diffraction light Sp Diffraction spot

Claims (4)

周期構造体に光を入射し、回折像を得る第1工程と、
前記回折像に位相の情報を加え、前記周期構造体の表面形状を再構築した再構築像を得る第2工程と、
前記再構築像における欠陥を抽出し、前記再構築像における前記欠陥の割合を求める第3工程と、
前記欠陥の割合から前記再構築像における有効領域の割合を算出し、前記有効領域の割合から前記周期構造体の光学特性を予想する第4工程と、を有する、光学特性の評価方法。
The first step of injecting light into the periodic structure to obtain a diffraction image,
A second step of adding phase information to the diffraction image to obtain a reconstructed image in which the surface shape of the periodic structure is reconstructed.
A third step of extracting defects in the reconstructed image and determining the proportion of the defects in the reconstructed image, and
A method for evaluating optical characteristics, which comprises a fourth step of calculating the ratio of an effective region in the reconstructed image from the ratio of the defects and predicting the optical characteristics of the periodic structure from the ratio of the effective region.
前記第2工程において、前記回折像から実像への逆フーリエ変換と前記実像から前記回折像へのフーリエ変換とを、回折波の位相を変えながら複数回繰り返し、前記位相の情報を最適化する、請求項1に記載の光学特性の評価方法。 In the second step, the inverse Fourier transform from the diffraction image to the real image and the Fourier transform from the real image to the diffraction image are repeated a plurality of times while changing the phase of the diffracted wave, and the information on the phase is optimized. The method for evaluating optical characteristics according to claim 1. 前記第1工程は、
前記周期構造体で反射した光の回折パターンを投影面に投影する工程と、
前記投影面の垂線方向に対して所定の仰角の位置に配置した検出器で、前記投影面に投影された投影像を検出する工程と、
前記投影像を前記検出器が配置された仰角に基づき補正し、前記回折像を得る工程と、
を有する、請求項1又は2に記載の光学特性の評価方法。
The first step is
The process of projecting the diffraction pattern of the light reflected by the periodic structure onto the projection surface,
A step of detecting a projected image projected on the projection surface with a detector arranged at a predetermined elevation angle with respect to the perpendicular direction of the projection surface.
A step of correcting the projected image based on the elevation angle at which the detector is arranged to obtain the diffraction image, and
The method for evaluating optical characteristics according to claim 1 or 2.
前記第3工程は、
前記再構築像における単位構造の長さ、周囲長及び面積から前記欠陥を判別する工程と、
前記欠陥と判断された前記単位構造の数を、前記欠陥がない理想状態における前記単位構造の数で割り、前記欠陥の割合を求める工程と、
を有する、請求項1〜3のいずれか一項に記載の光学特性の評価方法。
The third step is
A step of discriminating the defect from the length, perimeter and area of the unit structure in the reconstructed image, and
A step of dividing the number of the unit structures determined to be the defects by the number of the unit structures in an ideal state without the defects to obtain the ratio of the defects.
The method for evaluating optical characteristics according to any one of claims 1 to 3.
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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07270339A (en) * 1994-03-31 1995-10-20 Dainippon Printing Co Ltd Apparatus for inspection of color filter
JP2002014459A (en) * 2000-06-29 2002-01-18 Toshiba Corp Method for evaluating photomask defect transfer characteristic, method for correcting photomask defect and method for manufacturing semiconductor device
JP2007170827A (en) * 2005-12-19 2007-07-05 Toppan Printing Co Ltd Defect inspection device of periodic pattern
JP2008177579A (en) * 2007-01-22 2008-07-31 Wafermasters Inc Dynamic wafer stress management system
JP2009002743A (en) * 2007-06-20 2009-01-08 Hitachi High-Technologies Corp Visual inspection method, device therefor, and image processing evaluation system
JP2009047469A (en) * 2007-08-15 2009-03-05 Toppan Printing Co Ltd Method and device for inspecting color filter using diffracted image
WO2011093043A1 (en) * 2010-01-27 2011-08-04 国立大学法人北海道大学 Diffraction microscopy
JP2016138772A (en) * 2015-01-27 2016-08-04 国立研究開発法人理化学研究所 Imaging device and imaging method
US20170045823A1 (en) * 2015-08-12 2017-02-16 Asml Netherlands B.V. Inspection Apparatus, Inspection Method and Manufacturing Method
JP2017194587A (en) * 2016-04-21 2017-10-26 凸版印刷株式会社 Inspection method and inspection device for color filter

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07270339A (en) * 1994-03-31 1995-10-20 Dainippon Printing Co Ltd Apparatus for inspection of color filter
JP2002014459A (en) * 2000-06-29 2002-01-18 Toshiba Corp Method for evaluating photomask defect transfer characteristic, method for correcting photomask defect and method for manufacturing semiconductor device
JP2007170827A (en) * 2005-12-19 2007-07-05 Toppan Printing Co Ltd Defect inspection device of periodic pattern
JP2008177579A (en) * 2007-01-22 2008-07-31 Wafermasters Inc Dynamic wafer stress management system
JP2009002743A (en) * 2007-06-20 2009-01-08 Hitachi High-Technologies Corp Visual inspection method, device therefor, and image processing evaluation system
JP2009047469A (en) * 2007-08-15 2009-03-05 Toppan Printing Co Ltd Method and device for inspecting color filter using diffracted image
WO2011093043A1 (en) * 2010-01-27 2011-08-04 国立大学法人北海道大学 Diffraction microscopy
JP2016138772A (en) * 2015-01-27 2016-08-04 国立研究開発法人理化学研究所 Imaging device and imaging method
US20170045823A1 (en) * 2015-08-12 2017-02-16 Asml Netherlands B.V. Inspection Apparatus, Inspection Method and Manufacturing Method
JP2017194587A (en) * 2016-04-21 2017-10-26 凸版印刷株式会社 Inspection method and inspection device for color filter

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