JP2021072355A - Solid-state imaging element - Google Patents

Abstract

To provide a solid-state imaging element capable of high-precision black level correction by reducing a difference in the amount of dark current between an effective pixel area and an OB pixel area without a significant increase in the number of processes.SOLUTION: The solid-state imaging element has an effective pixel area in which a plurality of effective pixels with a photoelectric conversion unit and a light-collecting member that collects incident light onto the photoelectric conversion unit provided on a semiconductor substrate are arranged and an optical black pixel area in which a plurality of light-blocking pixels with a light-blocking photoelectric conversion unit and the light-collecting member are arranged. The light-collecting member has a higher hydrogen concentration than an insulating layer around the light-collecting member. The volume of at least one light-collecting member in the optical black pixel area is larger than the volume of the light-collecting member in the effective pixel area.SELECTED DRAWING: Figure 2

Description

The present invention relates to a solid-state image sensor.

The solid-state image sensor is provided with an optical black pixel region (OB pixel region) in which light-shielding pixels having a light-shielding layer are arranged, and the black level due to dark current in the effective pixel region is used by using the output signal of the OB pixel region. Black level correction is generally performed to correct the fluctuation of.

However, in the sinker processing in the manufacturing process, the amount of hydrogen supplied from the interlayer insulating film to the substrate may differ between the effective pixel region and the OB pixel region, and as a result, the amount of dark current may differ between the effective pixel region and the OB pixel region. .. Therefore, it is assumed that the black level in the effective pixel region cannot be correctly corrected by using the output signal in the OB pixel region.

As a solution to such a problem, by forming an interlayer insulating film having a high hydrogen concentration only in the OB pixel region, the hydrogen concentration of the interlayer insulating film before the step of performing heat treatment (sinter treatment) is in the effective pixel region. A structure has been proposed in which the OB pixel region is higher than the OB pixel region (Patent Document 1).

Japanese Unexamined Patent Publication No. 2016-18859

However, in order to add an interlayer insulating film having a high hydrogen concentration in the OB pixel region or change the thickness of the correlated insulating film, it is necessary to make the manufacturing process of the interlayer insulating film different between the effective pixel region and the OB pixel region. .. Therefore, it is necessary to increase the number of processes such as mask pattern formation, etching, and mask pattern removal.

Therefore, an object of the present invention is to provide a solid-state image sensor capable of reducing the difference in the amount of dark current between the effective pixel region and the OB pixel region and capable of highly accurate black level correction without significantly increasing the number of processes. To do.

The present invention has been made to solve the above problems, and is an effective pixel region in which a plurality of effective pixels each having a photoelectric conversion unit and a condensing member for condensing incident light on the photoelectric conversion unit are arranged. In a solid-state image sensor having a light-shielding pixel region in which a plurality of light-shielding pixels each having the photoelectric conversion unit, the light-collecting member, and a light-shielding layer are arranged, the volume of the light-collecting member of the effective pixel is larger than that of the light-collecting member. It is characterized in that the volume of the light collecting member of the light-shielding pixel is larger.

According to the present invention, the difference in the amount of dark current between the effective pixel region and the OB pixel region can be reduced without a significant increase in the number of processes, and highly accurate black level correction becomes possible.

The plan view of the solid-state image pickup device which concerns on Example 1 of this invention. A cross-sectional view and a plan view of the solid-state image sensor according to the second embodiment of the present invention. A cross-sectional view and a plan view of the solid-state image sensor according to the second embodiment of the present invention. A cross-sectional view and a plan view of the solid-state image sensor according to the third embodiment of the present invention. The plan view of the solid-state image pickup device which concerns on Example 4 of this invention. A cross-sectional view and a plan view of the solid-state image sensor according to the fourth embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the configurations described in the following embodiments are merely examples, and the scope of the present invention is not limited by the configurations described in the embodiments.

(Example 1)
The solid-state image sensor according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2. In this embodiment, the difference in the amount of dark current between the effective pixel region and the OB pixel region is obtained by making the volume of the waveguide as the condensing member different in the effective pixel region, the OB pixel region (light-shielding pixel region), and the buffer region. Is to reduce.

FIG. 1 is a plan view of the solid-state image sensor according to the first embodiment of the present invention. As shown in FIG. 1, the solid-state image sensor in this embodiment has an effective pixel region 100 and an OB pixel region 101 arranged on the outer periphery thereof. Further, a buffer region 102 and a peripheral circuit region 103 are arranged on the outer periphery of the OB pixel region 101.

In the effective pixel region 100, a plurality of effective pixels that perform photoelectric conversion of incident light are arranged in a matrix, and the output signal of the pixels is used for image generation. Although details will be described later, the OB pixel region 101 is provided with a plurality of light-shielding pixels having a structure in which a light-shielding layer is added to the effective pixels. The output signal of the pixel is used for black level correction of the output signal of the effective pixel signal by a correction block (not shown).

In the black level correction, the black level shift in the output signal that does not depend on the amount of incident light due to the dark current generated in the effective pixel is predetermined by subtracting the output signal of the shaded pixel from the output signal of the effective pixel. Processing to match the reference level is performed.

The buffer region 102 is an region outside the OB pixel region 101. A plurality of dummy pixels are arranged in the buffer region 102 in order to alleviate the deterioration of the manufacturing accuracy of the light-shielding pixels due to a significant change in the structure at the boundary with the peripheral circuit region 103 in which the pixels are not arranged. In this embodiment, the components periodically arranged in the buffer region are dummy pixels. The components will be described later with reference to the attached figure.

In the peripheral circuit area 103, a drive signal generation circuit for driving effective pixels and light-shielding pixels, an AD conversion circuit for AD-converting the output of effective pixels and light-shielding pixels, and an output circuit for outputting AD-converted signals are arranged. ..

Subsequently, the cross-sectional structure of the solid-state image sensor according to the first embodiment will be described with reference to FIG. FIG. 2 is a cross-sectional view and a plan view of the solid-state image sensor according to the first embodiment of the present invention.

FIG. 2A shows a cross-sectional structure in the broken line AA'of FIG. 1, and FIG. 2B is a plan view showing the shape of the waveguide as seen from the incident direction of light in each region. .. In FIG. 2A, effective pixels, light-shielding pixels, and dummy pixels arranged in the effective pixel area 100, the OB pixel area 101, and the buffer area 102 are shown schematically one by one. It should be noted that there are a plurality of effective pixels, light-shielding pixels, and dummy pixels.

As shown in FIG. 2, the cross-sectional structures of the effective pixel region 100, the OB pixel region 101, and the buffer region 102 are different. The effective pixel of the effective pixel region 100 includes a photodiode 201, a wiring 202, an insulating layer 203, a color filter 205, a microlens 206, and a waveguide 207 for effective pixels, which are photoelectric conversion units formed on the semiconductor substrate 200. Further, the light-shielding pixels in the OB pixel area 101 are different in that the light-shielding layer 204 is added to the effective pixels in the effective pixel area 100 and that the waveguide is changed to the light-shielding pixel waveguide 208. The dummy pixel of the buffer region 102 is different from the light-shielding pixel in that it does not have the photodiode 201 and the wiring 202 and that the waveguide is changed to the dummy pixel waveguide 209.

The photodiode 201 is a photoelectric conversion unit that photoelectrically converts incident light. The electric charge generated and accumulated in the photodiode 201 is transferred to a floating diffusion (not shown) by a transfer transistor (not shown) and read out as a voltage signal. The wiring 202 is used for electrical connection with the semiconductor substrate 200 and a transistor (not shown). The insulating layer 203 insulates the terminals of the wiring 202 and the transistor (not shown). For the insulating layer 203, for example, a silicon oxide film is used.

The light-shielding layer 204 prevents light from entering the photodiode 201 in the OB pixel region 101. The color filter 205 is an optical filter that is arranged according to, for example, a Bayer array in the effective pixel region 100 and has transmission wavelength characteristics corresponding to R, G, and B. The color filter 205 arranged in the OB pixel region 101 and the buffer region 102 is, for example, a filter corresponding to B that is easily absorbed in the semiconductor substrate 200 or a wide wavelength range in order to prevent leakage to the effective pixel region 100. A black filter with low transmittance is used.

The microlens 206 improves the light receiving sensitivity of the photodiode 201 by condensing the incident light on the waveguide 207 for effective pixels. The effective pixel waveguide 207 has a role of guiding the light focused by the microlens 206 to the photodiode 201. All the waveguides (effective pixel waveguide 207, OB waveguide 208, buffer waveguide 209) are made of the same material, and for example, silicon nitride is used. As described above, a silicon oxide film is used for the insulating layer 203 around the waveguide, and the refractive index is lower than that of silicon nitride. Therefore, the light incident on the waveguide is totally reflected on the side surface of the waveguide and is guided to the photodiode 201.

As shown in FIG. 2B, the light-shielding pixel waveguide 208 has a larger area when viewed from the incident direction of light than the effective pixel waveguide 207, and the dummy pixel waveguide 209 is for light-shielding pixels. The area when viewed from the incident direction of light is larger than that of the waveguide 208. The effective pixel waveguide 207 is formed in a circular shape when viewed from the incident direction of light. On the other hand, the light-shielding pixel waveguide 208 and the dummy pixel waveguide 209 are configured to have rounded squares.

Due to such a shape, the volume of the light-shielding pixel waveguide 208 is larger than the volume of the effective pixel waveguide 207, and the volume of the dummy pixel waveguide 209 is larger than the volume of the light-shielding pixel waveguide 208. If the shape of the waveguide is a square with rounded corners, the optical characteristics will change, but there is no particular problem in the OB pixel region 101 and the buffer region 102 because the light is blocked by the light-shielding layer 204 and no light is incident.

The silicon nitride constituting the waveguide is manufactured by using a known semiconductor manufacturing process, is deposited by, for example, a CVD method, and is formed at a lower temperature than when the silicon oxide film of the insulating layer 203 is formed. As a result, the hydrogen concentration contained in the formed silicon nitride is higher than that of the silicon oxide film. Therefore, by making the volume of the waveguide different, it is possible to adjust the amount of hydrogen supplied to the substrate in the sinker processing in the effective pixel region 100, the OB pixel region 101, and the buffer region 102.

The supply of hydrogen in the sinter treatment is not limited to the vicinity of the photodiode 201 directly under the waveguide, but spreads over a plurality of pixels, so that the amount of hydrogen supplied decreases especially at the peripheral end where the continuity of the pixel structure is interrupted. Cheap. Therefore, by increasing the volume of the dummy pixel waveguide 209 in the buffer region 102, the amount of dark current generated by the photodiode 201 in the peripheral portion of the OB pixel region 101 and the effective pixel region 100 can be made uniform.

In addition, in this embodiment, the shape change of the waveguide is not changed in the thickness direction (perpendicular to the semiconductor substrate 200), but only in the plane direction. As a result, the volume of the waveguide can be made different depending on the mask pattern at the time of etching, and silicon nitride is deposited (formation of the waveguide) in the effective pixel region 100, the OB pixel region 101, and the buffer region 102 by the same process. It can be performed. Therefore, it is not necessary to increase a new process for adjusting the amount of dark current generated. For example, even within the same OB pixel region, the closer to the buffer region, the larger the volume of the waveguide may be, and finer adjustments may be made. ..

However, in this embodiment, an example in which the dummy pixel waveguide 209 is arranged in the buffer region 102 to increase the volume is shown, but the volume of the dummy pixel waveguide 209 does not have to be increased. A configuration in which the waveguide 209 for dummy pixels is not arranged may be used. That is, it is possible to make the amount of dark current generated uniform only by increasing the volume of the light-shielding pixel waveguide 108. That is, it is possible to reduce the difference in the amount of dark current between the effective pixel region and the OB pixel region.

On the other hand, by arranging the waveguide in the dummy pixel of the buffer region without increasing the volume of the waveguide in the OB pixel region, the difference in the amount of dark current between the effective pixel region and the OB pixel region can be reduced. Further, the dummy pixel may have other components (for example, a photodiode 201 or a transistor (not shown)), and may have no components other than the waveguide. That is, a component serving as a hydrogen supply source may be arranged in the buffer region.

Further, in the present embodiment, the OB pixel area 101 is arranged on all four sides around the effective pixel area 100, but the present invention is not limited to this, and the periphery of the effective pixel area 100 is arranged, for example, on two sides. The OB pixel area 101 may be arranged in a part of the above.

(Example 2)
Hereinafter, the solid-state image sensor according to the second embodiment of the present invention will be described with reference to the drawings. In the second embodiment, the difference in the amount of dark current between the effective pixel region and the OB pixel region is reduced by making the volume of the inner lens as the condensing member different. Hereinafter, the differences between the present embodiment and the first embodiment will be described. The solid-state image sensor according to the second embodiment has the same configuration as the solid-state image sensor of the first embodiment in the arrangement of the effective pixel region, the OB pixel region, the buffer region, and the peripheral circuit region.

The cross-sectional structure of the solid-state image sensor according to the second embodiment will be described with reference to FIG. FIG. 3 is a cross-sectional view and a plan view of the solid-state image sensor according to the second embodiment of the present invention.

FIG. 3A shows a cross-sectional structure in the broken line AA'of FIG. 1, and FIG. 3B is a plan view showing the shape of the inner lens as seen from the incident direction of light in each region. .. As shown in FIG. 3A, the solid-state image sensor of this embodiment does not have a waveguide, and has an inner lens 307 for effective pixels, an inner lens 308 for light-shielding pixels, and an inner lens 309 for dummy pixels. In addition, it has a light-shielding wall 310, and the light-shielding layer 304 is arranged above the light-shielding wall 310. The light-shielding wall 310 is arranged to prevent light incident from an unexpected angle from leaking to adjacent pixels.

The inner lens 307 for effective pixels is configured to collect the incident light on the photodiode 301 together with the microlens 306. All inner lenses (inner lens 307 for effective pixels, inner lens 308 for light-shielding pixels, inner lens 309 for dummy pixels) are made of the same material, and for example, silicon nitride is used.

As shown in FIGS. 3A and 3B, the inner lens for effective pixels has a hemispherical shape. On the other hand, the light-shielding pixel inner lens 308 and the dummy pixel inner lens 309 have a substantially trapezoidal cross section, and are configured to have rounded squares on a plane viewed from the incident direction of light. Due to such a shape, the volume of the light-shielding pixel inner lens 308 is larger than the volume of the effective pixel inner lens 307, and the volume of the dummy pixel inner lens 309 is larger than the volume of the light-shielding pixel inner lens 308. If the shape of the inner lens is non-hemispherical, the optical characteristics will change, but there is no particular problem in the OB pixel region 101 and the buffer region 102 because the light is blocked by the light-shielding layer 304 and no light is incident.

The silicon nitride constituting the inner lens is manufactured by using a known semiconductor manufacturing process, and is formed by, for example, reflow, etching, or an exposure process using a gradation mask. At this time, the hydrogen concentration contained in the formed silicon nitride is higher than that of the silicon oxide film. Therefore, by making the volume of the inner lens different, it is possible to adjust the amount of hydrogen supplied to the substrate in the sinker processing in the effective pixel region 100, the OB pixel region 101, and the buffer region 102.

Also in the solid-state image sensor according to the second embodiment, the volumes of the light-shielding pixel inner lens 308 in the OB pixel region 101 and the dummy pixel inner lens 309 in the buffer region 102 are increased. Then, the amount of dark current generated by the photodiode 201 in the peripheral portion of the OB pixel region 101 and the effective pixel region 100 can be made uniform. That is, it is possible to reduce the difference in the amount of dark current between the effective pixel region and the OB pixel region.

In addition, in the present embodiment, the volume of the inner lens can be made different depending on the pattern of the gradation mask, and the inner lens is formed in the effective pixel area 100, the OB pixel area 101, and the buffer area 102 by the same process. be able to. Therefore, it is not necessary to increase the number of new processes for adjusting the amount of dark current generated.

In this embodiment, the light-shielding layer 304 is arranged between the inner lens and the color filter 305, but the present invention is not limited to this, and for example, the light-shielding layer 304 may be arranged between the inner lens and the wiring 302. A light-shielding layer 304 is arranged between the inner lens, which is a hydrogen supply source in the sinter treatment, and the photodiode 301. As a result, although the hydrogen supply amount is reduced, the difference in the dark current amount between the effective pixel region and the OB pixel region can be reduced by increasing the supply amount due to the increase in the volume of the inner lens.

(Example 3)
Hereinafter, the solid-state image sensor according to the third embodiment of the present invention will be described with reference to the drawings. In the third embodiment, the difference in the amount of dark current in the effective pixel region is also reduced by making the volume of the inner lens different in the effective pixel region. Hereinafter, the differences from the first and second embodiments will be described.

The solid-state image sensor according to the third embodiment has the same configuration as the solid-state image sensor of the first and second embodiments in the arrangement of the effective pixel region, the OB pixel region, the buffer region, and the peripheral circuit region. The cross-sectional structure of the solid-state image sensor according to the third embodiment will be described with reference to FIG. FIG. 4 is a cross-sectional view and a plan view of the solid-state image sensor according to the third embodiment of the present invention.

FIG. 4A shows a cross-sectional structure in the broken line AA'of FIG. 1, and FIG. 4B is a plan view showing the shape of the inner lens as seen from the incident direction of light in each region. .. As shown in FIG. 4A, the inner lenses 407, 411, and 412 in the effective pixel region 100 of this embodiment are different in shape so that the cross-sectional shape on the end side swells from the center toward the end. .. In addition, as shown in FIG. 4B, the planar shape is circular and does not change. Due to such a shape, even in the inner lens in the effective pixel region 100, the volume of the inner lens increases as it approaches the end portion. That is, the amount of hydrogen supplied to the substrate in the sinker processing can be effectively adjusted within the effective pixel region 100.

Further, in the peripheral portion of the effective pixel region 100 including the OB pixel region 101, the microlens 406 and the color filter 405, the inner lens and the light-shielding wall 410, the wiring 402, and the photodiode 401 are arranged so as to be shifted stepwise. Will be done. Since the main ray of the lens is inclined as the distance from the optical center of the solid-state image sensor increases, it is desirable that the lenses are arranged in a staggered manner. Since the main light beam is tilted at the end in this way, the incident light is focused on the photodiode 401 even if the end side is bulging like the inner lenses 411 and 412, so that the change in the shape of the inner lens is optical. It does not easily affect the characteristics.

In the solid-state image sensor according to the third embodiment, not only can the difference in the amount of dark current generated by the photodiode 401 in the OB pixel region 101 be reduced as in the second embodiment, but also the dark current of the photodiode 401 in the effective pixel region 100 can be reduced. It is possible to make the generated amount more accurate and uniform. Further, in this embodiment, the inner lens 408 for light-shielding pixels and the inner lens 409 for dummy pixels have a structure in which the volume is larger than that of the inner lenses 407, 411, 412 for effective pixels. Not limited to this, for example, the shape may be the same as that of the inner lens 412 for effective pixels at the end. Since the hydrogen supply to the substrate in the sinter processing by the inner lens 412 for effective pixels is also supplied to the photodiode 401 in the OB pixel region arranged nearby, the amount of dark current generated by the photodiode 401 in the OB pixel region 101 The difference can be reduced.

(Example 4)
Hereinafter, the solid-state image sensor according to the fourth embodiment of the present invention will be described with reference to the drawings. In the fourth embodiment, the difference in the amount of dark current between the effective pixel region and the OB pixel region is reduced by arranging the inner lens in the scribe line region. Hereinafter, the points that the present embodiment differs from the first to third embodiments will be described.

The solid-state image sensor in this embodiment is a stacked solid-state image sensor configured by laminating a pixel substrate and a signal processing substrate. The configuration of the stacked solid-state image sensor is known, and description thereof will be omitted. FIG. 5 is a plan view of the pixel substrate of the solid-state image sensor according to the fourth embodiment of the present invention. It schematically shows how the pixel substrates of the four solid-state image sensors are formed on the same silicon substrate.

The pixel substrate of the solid-state image sensor has an effective pixel region 500 and an OB pixel region 501 arranged on the outer periphery thereof. Further, a buffer region 502 is provided on the outer periphery of the OB pixel region 501, and a scribe line region 503 is provided outside the buffer region 502. In the solid-state image sensor of this embodiment, a silicon substrate is cut in the scribe line region 503, and dicing is performed to cut a single solid-state image sensor. The dicing is performed after the sinter treatment. The circuit blocks (drive signal generation circuit, AD conversion circuit, output circuit) corresponding to the peripheral circuit regions of Examples 1 to 3 are arranged on a signal processing board (not shown) to be stacked.

Subsequently, the cross-sectional structure of the solid-state image sensor according to the fourth embodiment will be described with reference to FIG. FIG. 6 is a cross-sectional view and a plan view of the pixel substrate of the solid-state image sensor according to the fourth embodiment of the present invention.

FIG. 6A shows a cross-sectional structure taken along the broken line AA'of FIG. 3, and FIG. 4B is a plan view showing the shape of the inner lens as seen from the incident direction of light in each region. The pixel substrate of the solid-state image sensor of this embodiment has a back-illuminated structure, and the transistors, wirings 602, and insulating layer 603 (not shown) are configured on the semiconductor substrate 600 on the side opposite to the light incident side. Will be done. Further, the wiring 602 arranged on the lower side in the drawing of the wiring 602 is electrically connected to the wiring on the signal processing board to be stacked. On the other hand, the light-shielding layer 604, the light-shielding wall 610, the microsens 606, the color filter 605, and the microlens 606 are configured on the incident side of light with respect to the semiconductor substrate 600.

The scribe line region 503 does not have the microlens 606, the light shielding layer 604, and the wiring 602 with respect to the buffer region 502, and does not have the light shielding wall 610 except for the boundary with the buffer region 502. Further, the inner lens 607 is arranged at the same intervals as the effective pixel area 500, the OB pixel area 501, and the buffer area 502, and has the same shape regardless of the area.

In a solid-state image sensor having a laminated structure, it is not necessary to have a peripheral circuit area on the pixel substrate, or a small scale is sufficient, so that the effective pixel area 500 or the OB pixel area 501 and the scribe line area 503 are arranged close to each other. Therefore, hydrogen is supplied to the OB pixel region 501 from the inner lens 607 arranged in the scribe line region 503 by the sinter treatment. That is, since the discontinuity of hydrogen supply by the inner lens 607 is improved, the difference in dark current generated between the photodiode 601 in the effective pixel region 500 and the photodiode 601 in the OB pixel region can be reduced.

In the present embodiment, the inner lens 607 arranged in the scribe line region 503 has the same shape and the same spacing as the effective pixel region 500, the OB pixel region 501, and the buffer region 502, but is not limited to this. For example, the volume of the inner lens 607 arranged in the scribe line region 503 may be increased, or the arrangement density may be increased.

Further, although an example in which the peripheral circuit region is not arranged on the pixel substrate of the solid-state image sensor of the present embodiment is shown, the peripheral circuit region may be arranged, or the inner lens may be arranged in the peripheral circuit region. In order to improve the discontinuity of hydrogen supply by the inner lens, if the inner lens is arranged outside the buffer region which is the outermost circumference of the periodic arrangement of the pixels, the difference in the amount of dark current generated can be reduced. Further, in the present embodiment, the inner lens is arranged in the scribe line region, but the present invention is not limited to this, and a waveguide may be arranged.

102 Buffer area 103 Scrivener area 201 photodiode 206 Microlens 204 Light-shielding layer 207 Effective pixel waveguide 208 Light-shielding pixel waveguide

Claims (7)

An effective pixel region in which a plurality of effective pixels each having a photoelectric conversion unit and a condensing member for condensing incident light on the photoelectric conversion unit are arranged, and each of the photoelectric conversion unit, the condensing member, and a light-shielding layer. In a solid-state image sensor provided with a light-shielding pixel region in which a plurality of light-shielding pixels are arranged.
A solid-state imaging device characterized in that the volume of the light-shielding pixel light-collecting member is larger than the volume of the effective pixel light-collecting member. The solid-state image sensor according to claim 1, wherein the photoelectric conversion unit of the light-shielding pixel is shielded from light by the light-shielding layer, and the light-collecting member is provided between the light-shielding layer and the photoelectric conversion unit. Claim 1 or 2 characterized in that the volume of the light collecting member of the effective pixel arranged at the end is larger than the volume of the light collecting member of the effective pixel arranged in the center of the effective pixel region. The solid-state image sensor according to the above. A buffer region in which a plurality of dummy pixels are arranged outside the effective pixel region and the light-shielding pixel region is provided, and the volume of the light-collecting member of the dummy pixel is larger than the volume of the light-collecting member of the light-shielding pixel. The solid-state imaging device according to any one of claims 1 to 3, which is characterized. The solid-state imaging according to any one of claims 1 to 4, wherein a scribe line region is provided outside the effective pixel region and the light-shielding pixel region, and the condensing member is arranged in the scribe line region. element. The solid-state imaging device according to any one of claims 1 to 5, wherein the light collecting member is a waveguide. The solid-state imaging device according to any one of claims 1 to 5, wherein the condensing member is an inner lens.

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