JP2021034666A - Manufacturing method of semiconductor device - Google Patents

Abstract

To provide a manufacturing method of a semiconductor device, capable of obtaining a mounting body having a good bonding state.SOLUTION: A manufacturing method of a semiconductor device according to the present technique, includes: a step of mounting a semiconductor chip in which an electrode with a solder is formed and an underfill material is bonded to an electrode surface, onto an electric component in which an opposite electrode facing to the electrode with the solder is formed; and a step of heat-crimping the semiconductor chip and the electric component. In the underfill material, a time when a reaction rate at 220°C calculated by Ozawa method using a differential scanning calorimeter achieves 100% is 30 minutes or more, and the minimum melting viscosity is 10 Pa*s or more and is less than 10000 Pa*s. In the step of heat-crimping, a cross-sectional area of the relative lower electrode of the electrode with the solder and the opposite electrode is 80% or less of the cross-sectional area on a relative upper electrode.SELECTED DRAWING: Figure 3

Description

The present technology relates to a method for manufacturing a semiconductor device.

Conventional general liquid underfill materials have problems such as thickness control of the liquid underfill material and voids at the time of mounting. Therefore, in recent high-density (narrow-pitch) mounting and multi-pin mounting, a thermosetting film-like underfill material (underfill film) is generally used.

For example, in flip chip mounting, solder is used for the upper bumps and metal (eg Cu or Ni / Au) bumps are used for the lower bumps. A good bonding state can be achieved by the solder on the upper bumps getting wet and spreading on the lower metal bumps. If the bonding state is insufficient, the interface between the solder and the metal becomes brittle, cracks may occur in a reliability test such as a heat cycle, and bonding failure may occur. Therefore, the wetting and spreading of the solder is an important factor for obtaining a mounted body having a good bonded state.

By the way, the underfill material generally has a curing start temperature of 80 to 120 ° C. Further, at the time of mounting, heating is usually performed at a solder melting temperature (220 ° C. or higher). Under such conditions, the underfill material cures in a few seconds during mounting. On the other hand, the wet spread of the solder starts when the solder melting temperature is exceeded. If the underfill material starts to cure before the solder melts, for example, as shown in FIG. 1, the cured underfill material 104 hinders the wettability of the solder 103, resulting in a bonded state. It tends to be difficult to obtain a good mount.

Japanese Unexamined Patent Publication No. 2015-56500

The present technology has been proposed in view of such conventional circumstances, and provides a method for manufacturing a semiconductor device capable of obtaining a mount having a good bonded state.

In the method for manufacturing a semiconductor device according to the present technology, a semiconductor chip in which a soldered electrode is formed and an underfill material is bonded to the electrode surface is mounted on an electronic component in which a counter electrode facing the soldered electrode is formed. The underfill material has a reaction rate of 100% at 220 ° C. calculated by the Ozawa method using a differential scanning calorimeter. Is 30 seconds or more, the minimum melt viscosity is 10 Pa · s or more and less than 10000 Pa · s, and in the heat crimping step, the lower side of each of the soldered electrode and the counter electrode is relatively lower. The cross-sectional area of the electrode is 80% or less of the cross-sectional area of the relatively upper electrode.

According to the present technology, it is possible to improve the wettability and spread of the solder, and a mounted body having a good bonded state can be obtained.

FIG. 1 is a cross-sectional view showing an example of a conventional mounting body. FIG. 2 is a cross-sectional view showing an example of the mounting body. FIG. 3 is a cross-sectional view for explaining the relationship between the cross-sectional area of the upper electrode and the cross-sectional area of the lower electrode. FIG. 4 is a plan view for explaining the relationship between the cross-sectional area of the upper electrode and the cross-sectional area of the lower electrode for the pair of the upper electrode and the lower electrode. FIG. 5 is a perspective view schematically showing an example of a process of attaching an underfill film on a wafer. FIG. 6 is a perspective view schematically showing an example of a step of dicing a wafer. FIG. 7 is a perspective view schematically showing an example of a process of picking up a semiconductor chip. FIG. 8 is a cross-sectional view schematically showing a semiconductor chip and an electronic component at the time of mounting. FIG. 9 is a graph showing an example of a change in viscosity of the underfill material with respect to temperature. FIG. 10 is a graph showing an example of the reaction rate of the underfill material at 220 ° C. FIG. 11 is a cross-sectional view for explaining a method of evaluating the amount of wet spread of the solder.

In the method for manufacturing a semiconductor device according to the present technology (hereinafter referred to as the present manufacturing method), a soldered electrode is formed, and a counter electrode facing the soldered electrode is formed on a semiconductor chip in which an underfill material is bonded to the electrode surface. It includes a step of mounting on the electronic component and a step of heat-bonding the semiconductor chip and the electronic component. Further, the underfill material used in this production method has a reaction rate of reaching 100% at 220 ° C. calculated by the Ozawa method using a differential scanning calorimeter for 30 seconds or more, and has a minimum melt viscosity. It is 10 Pa · s or more and less than 10,000 Pa · s. In this manufacturing method, in the thermocompression bonding step, the cross-sectional area of the relatively lower electrode among the soldered electrodes and the counter electrode is 80% or less of the cross-sectional area of the relatively upper electrode. To do so.

In the conventional manufacturing method of semiconductor devices, there is a tendency to adjust only the physical properties of the underfill material, so that the underfill material that has been cured hinders the wettability of the solder, and a mounted body having a good bonded state can be obtained. It was difficult to obtain. On the other hand, in this manufacturing method, by setting the physical characteristics of the underfill material and the cross-sectional area (bump shape) of the electrodes of the semiconductor chip and the electronic component as specific conditions, for example, as shown in FIG. 2, the solder 4 gets wet. It is possible to improve the spread, in particular, the wet spread of the solder 4 to the lower counter electrode 8, and it is possible to obtain a mount having a good bonded state (high reliability).

First, the underfill material used in this production method has a reaction rate of 100% or more at 220 ° C. calculated by the Ozawa method using a differential scanning calorimeter for 30 seconds or more. When the reaction rate reaches 100% for 30 seconds or more, it is possible to prevent the underfill material from starting to cure before the solder melts. As a result, it is possible to prevent the cured underfill material from hindering the wettability of the solder, and it is possible to obtain a mounted body having a good bonded state. The method for calculating the reaction rate by the Ozawa method using a differential scanning calorimeter is as follows. First, the calorific value of the entire peak, the peak temperature, and the rate of change to the peak top are calculated from the constant velocity temperature rise data for the sample. Next, the Ozawa plot is created by taking the common logarithmic value of the temperature rise speed on the vertical axis and the inverse value of the peak temperature on the horizontal axis, and obtain the activation energy, pre-exponential factor, and reaction order for the sample. Then, by creating a reaction prediction diagram from the active energy, the frequency factor, and the reaction order, the time to reach the predetermined reaction rate at the predetermined temperature can be calculated.

Next, the underfill material used in this production method preferably has a minimum melt viscosity of 10 Pa · s or more and less than 10000 Pa · s, and is preferably 100 Pa · s or more and 5000 Pa · s or less. When the minimum melt viscosity of the underfill material is 10 Pa · s or more and less than 10000 Pa · s, the wet spread of the solder can be improved in the thermocompression bonding step, and a mounted body having a good bonded state can be obtained.

Further, in the present manufacturing method, in the thermocompression bonding step, the cross-sectional area of the relatively lower electrode among the soldered electrodes and the counter electrode is 80% or less of the cross-sectional area of the relatively upper electrode. , 30% or more and 80% or less is preferable. The relatively upper electrode is, for example, the electrode 3 in FIG. 2-4. The cross-sectional area of the electrode 3 means, for example, the area of the AA'cross section in FIG. 2, that is, the cross section along the arrangement direction of the electrodes 3. The relatively lower electrode is, for example, the counter electrode 8 in FIG. 2-4. The cross-sectional area of the electrode 8 means, for example, the area of the BB'cross section in FIG. 2, that is, the cross section along the arrangement direction of the electrodes 8. FIG. 3A is an example in which the cross-sectional area of the lower counter electrode 8 is 100% of the cross-sectional area of the upper electrode 3. FIG. 3B is an example in which the cross-sectional area of the lower counter electrode 8 is 80% of the cross-sectional area of the upper electrode 3. FIG. 3C shows an example in which the cross-sectional area of the lower counter electrode 8 is 50% of the cross-sectional area of the upper electrode 3. FIG. 3D shows an example in which the cross-sectional area of the lower counter electrode 8 is 30% of the cross-sectional area of the upper electrode 3. As shown in FIGS. 3B to 3D, for each electrode 3 and the counter electrode 8, the cross-sectional area of the counter electrode 8 is 80% or less of the cross-sectional area of the electrode 3 paired with the counter electrode 8. By designing the solder 4 so as to be such, in the process of thermocompression bonding, the wet spread of the solder 4 can be improved, and a mounted body having a good bonded state can be obtained.

The cross-sectional area of the lower counter electrode 8 is not particularly limited, and may be, for example, 2.5 × 10 ^{-5 to} 8.0 × 10 ^-4 mm ² .

Hereinafter, specific examples of this manufacturing method will be described. The method for manufacturing the semiconductor device according to the present embodiment includes an underfill film pasting step (step A), a dicing step (step B), a semiconductor chip mounting step (step C), and a thermocompression bonding step (step D). Has.

<Underfill film pasting process (process A)>
As shown in FIG. 5, in step A, the wafer 9 is fixed by a jig 11 having a ring-shaped or frame-shaped frame having a diameter larger than the diameter of the wafer 9, and the underfill film 10 is attached onto the wafer 9. wear. The underfill film 10 functions as a dicing tape that protects and fixes the wafer 9 during dicing of the wafer 9 and holds it during pickup. A large number of ICs are built in the wafer 9, and soldered electrodes are provided on the adhesive surface of the wafer 9 for each semiconductor chip classified by a scribe line.

The semiconductor chip 1 has an integrated circuit formed on the surface of a semiconductor such as silicon, and has a soldered electrode for connection called a bump. The soldered electrode is, for example, as shown in FIG. 3, in which the solder 4 is bonded onto the electrode 3. The soldered electrode has a total thickness of the thickness of the electrode 3 and the thickness of the solder 4. The electrode 3 is made of a solder-bondable material such as copper, nickel, or gold. Examples of the solder 4 include Sn-37Pb eutectic solder (melting point 183 ° C.), Sn-Bi solder (melting point 139 ° C.), Sn-3.5Ag (melting point 221 ° C.), and Sn-3.0Ag-0.5Cu (melting point 217 ° C.). ° C.), Sn-5.0Sb (melting point 240 ° C.) and the like can be used.

The underfill film 10 comprises, for example, an adhesive composition containing an epoxy resin, a curing agent, and an acrylic polymer. Further, the underfill material 10 may further contain a curing accelerator, an inorganic filler, an organic peroxide, a solvent and the like as other components.

Examples of the epoxy resin include dicyclopentadiene type epoxy resin, glycidyl ether type epoxy resin, glycidylamine type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, and spirocyclic epoxy resin. Naphthalene type epoxy resin, biphenyl type epoxy resin, terpen type epoxy resin, tetrabrombisphenol A type epoxy resin, cresol novolac type epoxy resin, phenol novolac type epoxy resin, α-naphthol novolac type epoxy resin, brominated phenol novolac type epoxy resin And so on. These epoxy resins may be used alone or in combination of two or more. The content of the epoxy resin in the underfill material is preferably 30 to 50% by mass.

As the curing agent (epoxy resin curing agent), phenols, imidazoles, acid anhydrides, amines, hydrazides, polymercaptans, Lewis acid-amine complexes and the like can be used. Among these, a phenol compound that can obtain a high crosslink density is preferable. Examples of the phenol compound include a phenol novolac compound, a cresol novolac compound, an aromatic hydrocarbon formaldehyde resin-modified phenol compound, a dicyclopentadienephenol-added compound, and a phenol aralkyl compound. Among the phenolic compounds, the phenol novolac compound is preferable from the viewpoint of heat resistance. The curing agent may be used alone or in combination of two or more. The content of the curing agent in the underfill material is preferably 1 to 15% by mass.

Examples of the curing accelerator include imidazoles such as 2-methylimidazole, 2-ethylimidazole, and 2-ethyl-4-methylimidazole, and 1,8-diazabicyclo (5,4,0) undecene-7 salt (DBU salt). ), Tertiary amines such as 2- (dimethylaminomethyl) phenol, phosphines such as triphenylphosphine, metal compounds such as tin octylate, and the like. The curing accelerator may be used alone or in combination of two or more. When the underfill material contains a curing accelerator, the content of the curing accelerator in the underfill material is preferably 0.5 to 1.5% by mass.

The acrylic polymer is preferably an acrylic rubber polymer having an epoxy group and an amide group from the viewpoint of connectivity and the like. The lower limit of the weight average molecular weight of the acrylic polymer, for example, preferably 5.0 × 10 ³ or more, more preferably 1.0 × 10 ⁴ or more. The upper limit of the weight average molecular weight of the acrylic polymer, for example, preferably 10 ⁶ or less, more preferably 7.0 × 10 ⁵ or less. One type of acrylic polymer may be used alone, or two or more types may be used in combination. The content of the acrylic polymer in the underfill material is preferably 30 to 60% by mass.

The inorganic filler is used for the purpose of adjusting the fluidity of the resin layer at the time of crimping, if necessary. As the inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide and the like can be used. The inorganic filler may be used alone or in combination of two or more. When the underfill material contains an inorganic filler, the content of the inorganic filler in the underfill material is preferably 10 to 30% by mass.

The underfill film can be obtained, for example, by preparing the above-mentioned adhesive composition, applying the underfill material on the peeled base material using a bar coater, and drying the underfill film.

<Dicing process (process B)>
In step B, the wafer to which the underfill film is attached is diced. For example, as shown in FIG. 6, the blade 12 is pressed along the scribe line to cut the wafer 9, and the wafer 9 is divided (individualized) into individual semiconductor chips. Then, each semiconductor chip 1 with an underfill film is held by the underfill film 10 and picked up, as shown in FIG. 7, for example.

<Semiconductor chip mounting process (process C)>
In step C, as shown in FIG. 8, the semiconductor chip 1 with an underfill film and the electronic component 6 are arranged via the underfill film 10. Further, the soldered electrode 3 of the semiconductor chip 1 with an underfill film and the counter electrode 8 of the electronic component 6 are aligned and arranged so as to face each other. Then, the semiconductor chip 1 is mounted on the electronic component 6 by heating and pressing the underfill film 10 under the conditions of a predetermined temperature, pressure, and time so that the underfill film 10 is fluidized by the heating bonder but the main curing does not occur. .. By mounting the semiconductor chip 1 on the electronic component 6, the soldered electrode 3 can be brought into contact with the counter electrode 8 on the electronic component 6 side without melting, and the underfill film 10 is completely cured. It can be in a non-existent state.

The electronic component 6 has a circuit formed on a base material 7 such as a rigid substrate or a flexible substrate. Further, in the mounting portion on which the semiconductor chip 1 is mounted, a counter electrode 8 having a predetermined thickness is formed at a position facing the soldered electrode 3 of the semiconductor chip 1.

The temperature condition at the time of mounting can be, for example, 30 ° C. or higher and 155 ° C. or lower. By setting the temperature condition to such a low temperature, the generation of voids can be suppressed and the damage to the semiconductor chip 1 can be reduced. The pressure condition can be, for example, 50 N or less. The time condition can be, for example, 0.1 seconds or more and 10 seconds or less, or 0.1 seconds or more and 1.0 seconds or less.

<Thermocompression bonding process (process D)>
In step D, the semiconductor chip and the electronic component are thermocompression bonded. By thermocompression bonding, the solder of the soldered electrode is melted to form a metal bond, and the underfill film is completely cured. Thereby, for example, as shown in FIG. 2, the electrode 3 of the semiconductor chip 1 and the counter electrode 8 of the electronic component 6 can be electrically and mechanically connected.

In the step D, as the thermocompression bonding condition, for example, a bonding condition for raising the temperature from the first temperature to the second temperature at a predetermined heating rate can be adopted. The first temperature is preferably substantially the same as the temperature at which the minimum melt viscosity of the underfill film is reached, and is preferably 50 ° C. or higher and 150 ° C. or lower. As a result, the curing behavior of the underfill film can be matched with the bonding conditions, and the generation of voids can be suppressed. The rate of temperature rise is preferably 50 ° C./sec or more and 150 ° C./sec or less. The second temperature is preferably 200 ° C. or higher and 280 ° C. or lower, and more preferably 220 ° C. or higher and 260 ° C. or lower, although it depends on the type of solder.

As described above, in this production method, the reaction rate at 220 ° C. calculated by the Ozawa method using a differential scanning calorimeter as the underfill material reaches 100% in 30 seconds or more, and the minimum melting is achieved. In the process of using an underfill material having a viscosity of 10 Pa · s or more and less than 10000 Pa · s and thermocompression bonding, the cross-sectional area of the relatively lower electrode of each soldered electrode and counter electrode is relatively upper. By setting the cross-sectional area of the electrode to 80% or less of the above, the wett spread of the solder can be improved, and a mounting body having a good bonding state, that is, a highly reliable mounting body can be obtained.

Hereinafter, examples of the present technology will be described. The present technology is not limited to these examples.

Preparation of underfill film, measurement of melt viscosity of underfill film, calculation of time for the reaction rate of underfill film to reach 100% at 220 ° C, preparation of mount, and evaluation of wet spread amount of solder , I did the following.

[Preparation of underfill film]
The following films A to F were produced as underfill films. The film A has a minimum melt viscosity of 100 Pa · s and a 100% curing time at 220 ° C. for 100 seconds. Film B has a minimum melt viscosity of 5000 Pa · s and a 100% curing time at 220 ° C. for 100 seconds. The film C has a minimum melt viscosity of 10000 Pa · s and a 100% curing time at 220 ° C. for 100 seconds. The film D has a minimum melt viscosity of 100 Pa · s and a 100% curing time at 220 ° C. of 30 seconds. The film E has a minimum melt viscosity of 5000 Pa · s and a 100% curing time at 220 ° C. of 30 seconds. The film F has a minimum melt viscosity of 100 Pa · s and a 100% curing time at 220 ° C. of 25 seconds.

[Melting viscosity]
The minimum melt viscosity and the minimum melt viscosity reached temperature of the underfill film were measured using a rheometer (ARES manufactured by TA) under the conditions of 5 ° C./min and 1 Hz. The results are shown in FIG. In FIG. 9, graph A is the result of film C, graph B is the result of films A, D, and F, and graph C is the result of films B and E.

[Calculation of time for the reaction rate to reach 100% at 220 ° C]
For the underfill film, the time required for the reaction rate to reach 100% at 220 ° C. was calculated by the following procedure.
(1): Using a differential scanning calorimeter (DSC), according to the description in the manual of the DSC Ozawa method software attached to the device, constant velocity temperature rise data (heating speed 5 ° C./ From min, 10 ° C./min, 20 ° C./min), the calorific value of the entire peak, the peak temperature, and the rate of change to the peak top were determined. The rate of change is the value obtained by dividing the amount of heat up to the peak temperature by the amount of heat of the entire peak.
(2): After creating an Ozawa plot by taking the common logarithmic value of the temperature rise speed on the vertical axis and the inverse value of the peak temperature on the horizontal axis, the activation energy, pre-exponential factor, and reaction order for each sample were obtained. ..
(3): A reaction prediction diagram was created from the active energy, frequency factor, and reaction order obtained in (2), and the time required to reach 100% reaction rate at 220 ° C. was calculated from this reaction prediction diagram. The results are shown in FIG. In FIG. 10, graph A is the result of film F, graph B is the result of films D and E, and graph C is the result of films A to C.

[Experimental Example 1]
[Preparation of mounting body]
In Experimental Example 1, film A was used as the underfill film. This underfill film was bonded onto a wafer with a press machine under the conditions of 50 ° C. and 0.5 MPa, and danced to obtain an IC chip having a soldered electrode.

The IC chip has a size of 6 mm × 6 mm and a thickness of 200 μm, and a solder (Sn-3.5 Ag, melting point 221 ° C.) having a thickness of 10 μm is formed at the tip of an electrode (Cu post) made of Cu having a thickness of 10 μm. It had peripherally arranged bumps (number of bumps: 384 pins, pitch width: 75 μm).

Similarly, the IC substrate facing the IC chip has a size of 8 mm × 8 mm and a thickness of 100 μm, and a peripheral having a thickness of 2 μm Ni / Au plated on an electrode (Cu post) made of Cu having a thickness of 10 μm. It had an arrangement of bumps (number of bumps: 384 pins). As shown in Table 1, the relationship between the cross-sectional area of the bumps on the IC substrate and the cross-sectional area of the bumps on the IC chip (lower bump cross-sectional area / upper bump cross-sectional area) is 30%, 50%, 80% or It was set to 100%.

Next, the IC chip was mounted on the IC substrate under the conditions of 60 ° C., 0.5 seconds, and 30 N using a flip chip bonder.

Next, using a flip-chip bonder, the temperature was raised from 60 ° C. to 250 ° C. for 10 seconds and thermocompression bonding was performed (30N). Further, it was cured under the conditions of 150 ° C. for 2 hours to obtain a mounted body. As for the temperature when the flip chip bonder was used, the actual temperature of the sample was measured by a thermocouple.

[Evaluation of the amount of wet spread of solder]
After joining the IC chip on the IC substrate, the cross section of the mounting body was observed, and the wet and spread state of the solder on the lower bump was confirmed. For example, as shown in FIG. 11A, when the solder 4 did not spread on the lower bump (opposite electrode 8) at all, it was evaluated as “wetting spread amount 0%”. Further, for example, as shown in FIG. 11B, when the solder 4 is wet and spread 25% in the height direction of the lower bump (opposite electrode 8), it is evaluated as "wet spread amount 25%". Further, for example, as shown in FIG. 11C, when the solder 4 is wet and spread in 50% of the lower bump (opposite electrode 8) in the height direction, it is evaluated as "wet spread amount 50%". Further, for example, as shown in FIG. 11D, when the solder 4 is wet and spread in 75% of the lower bump (opposite electrode 8) in the height direction, it is evaluated as "wetting spread amount 75%". Then, when the solder was wet and spread in all the height directions of the lower bumps, it was evaluated as "wet spread amount 100%". In order to obtain high reliability, it is preferable that the amount of wet spread of the solder on the lower bump is 25% or more. Therefore, when the wet spread amount was 25% or more, it was evaluated as OK, and when it was not, it was evaluated as NG. The results are shown in Table 1 below.

[Experimental Example 2]
In Experimental Example 2, the same procedure as in Experimental Example 1 was carried out except that the film B was used as the underfill film in the preparation of the mounting body.

[Experimental Example 3]
In Experimental Example 3, the same procedure as in Experimental Example 1 was carried out except that the film C was used as the underfill film in the preparation of the mounting body.

[Experimental Example 4]
In Experimental Example 4, the same procedure as in Experimental Example 1 was carried out except that the film D was used as the underfill film in the preparation of the mounting body.

[Experimental Example 5]
In Experimental Example 5, the same procedure as in Experimental Example 1 was carried out except that the film E was used as the underfill film in the preparation of the mounting body.

[Experimental Example 6]
In Experimental Example 6, the same procedure as in Experimental Example 1 was carried out except that the film F was used as the underfill film in the preparation of the mounting body.

As in Experimental Examples 1, 2, 4, and 5, the time required for the reaction rate to reach 100% at 220 ° C. calculated by the Ozawa method using a differential scanning calorimeter is 30 seconds or more, and the minimum melt viscosity is An underfill film (heat-curable adhesive) of 10 Pa · s or more and less than 10000 Pa · s is used, and the cross-sectional area of the relatively lower electrode of each soldered electrode and counter electrode is relatively upper. It was found that the amount of wet spread of the solder to the lower electrode can be 25% or more by making it 80% or less of the cross-sectional area of the electrode, and a mounted body with a good bonded state can be obtained. It was.

On the other hand, when an underfill film having a minimum melt viscosity of 10,000 Pa · s or more is used as in Experimental Example 3, or an underfill film having a 100% curing time at 220 ° C. of less than 30 seconds is used as in Experimental Example 6. If so, it was found that the amount of wet spread of the solder on the lower bump could not be 25% or more, and it was difficult to obtain a mounted body having a good bonded state. In Experimental Example 6, since an underfill film having a 100% curing time of less than 30 seconds at 220 ° C. was used, the removal of the underfill film in which curing had progressed between the upper bump and the lower bump became unstable, and the lower bump became unstable. It is considered that the amount of wet spread of the solder to the solder was less than 25%.

1 semiconductor chip, 2 semiconductors, 3 electrodes, 4 solders, 5 cured underfill materials, 6 electronic components, 7 base materials, 8 counter electrodes, 9 wafers, 10 underfill films, 11 jigs, 12 blades, 100 Semiconductor chip, 101 semiconductor, 102 electrode, 103 solder, 104 underfill material, 105 base material, 106 electrode

Claims (5)

A step of mounting a semiconductor chip in which a soldered electrode is formed and an underfill material is bonded to the electrode surface on an electronic component in which a counter electrode facing the soldered electrode is formed.
It has a process of thermocompression bonding the semiconductor chip and the electronic component.
The underfill material has a reaction rate of 30 seconds or more at 220 ° C. calculated by the Ozawa method using a differential scanning calorimeter, and has a minimum melt viscosity of 10 Pa · s or more and 10000 Pa · s. Is less than
In the thermocompression bonding step, the cross-sectional area of the relatively lower electrode among the soldered electrode and the counter electrode is 80% or less of the cross-sectional area of the relatively upper electrode of the semiconductor device. Production method. The method for manufacturing a semiconductor device according to claim 1, wherein the underfill material contains an epoxy resin, a curing agent, and an acrylic polymer. The semiconductor device according to claim 1 or 2, wherein in the step of mounting the semiconductor chip on the electronic component, the cross-sectional area of the lower electrode is 30% or more and 80% or less of the cross-sectional area of the upper electrode. Production method. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the underfill material has a minimum melt viscosity of 100 to 5000 Pa · s. The underfill material is any one of claims 1 to 4, wherein the reaction rate at 220 ° C. calculated by the Ozawa method using a differential scanning calorimeter is 30 seconds or more and 100 seconds or less. The method for manufacturing a semiconductor device according to item 1.

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