JP2021028576A - X ray apparatus and method for manufacturing structure - Google Patents

Abstract

To measure the inside of an object to be measured using a transmission X ray except an X ray scattering in the inside of the object to be measured.SOLUTION: The X ray apparatus comprises: a detector receiving the incidence of X rays including a transmission X ray transmitting the object to be measured or a scattering X ray scattering in the inside of the object to be measured and for detecting at least one of the course and travel direction of electrons caused by the scattering of the incident X rays and at least one of the course and travel direction of the incident and scattered X ray; and a specification part for specifying at least one of the transmission X ray and the scattering X ray on the basis of the at least one of the course and travel direction of electrons and the at least one of the course and travel direction of the X ray.SELECTED DRAWING: Figure 1

Description

The present invention relates to a method for manufacturing an X-ray apparatus and a structure.

Conventionally, there is known a Compton camera that detects Compton scattering of incident radiation (X-ray or γ-ray) and generates an image of a radiation source based on the result (for example, Patent Document 1). However, no non-destructive inspection device is known that detects Compton scattering and generates an image of the object to be measured based on the result.

Japanese Patent No. 5991519

According to the first aspect, the X-ray apparatus is a detector that receives an incident of transmitted X-rays transmitted through the object to be measured or X-rays including scattered X-rays scattered inside the object to be measured. A detector that detects at least one of the path and traveling direction of the X-ray generated by the scattering of the X-ray, and at least one of the path and traveling direction of the X-ray that is incident and scattered, and the path and traveling direction of the electron. A specific portion that identifies at least one of the transmitted X-rays and the scattered X-rays based on at least one of the X-rays and at least one of the X-ray paths and traveling directions.
According to the second aspect, in the method for manufacturing a structure, design information regarding the shape of the structure is created, the structure is created based on the design information, and the shape of the created structure is obtained. The shape information is acquired by measuring using the X-ray apparatus of the first aspect, and the acquired shape information and the design information are compared.

It is a block diagram which shows typically the structure of the X-ray apparatus by one Embodiment. It is a figure which shows typically the path of the X-ray which is incident on the scattering part and the absorbing part of a detector. It is a figure which shows typically the path of the X-ray which is incident on the scattering part and the absorbing part of a detector. It is a figure which shows typically the case where the X-ray which transmitted through the different positions of the object to be measured is incident on the same position of the absorption part. It is a flowchart explaining the process executed by the X-ray apparatus by one Embodiment. It is a figure which shows typically the structure of the detector in the modification. It is a block diagram which shows typically the structure of the structure manufacturing system by one Embodiment. It is a flowchart explaining the process executed by the structure manufacturing system by one Embodiment.

An X-ray apparatus according to an embodiment will be described with reference to the drawings. The X-ray apparatus irradiates the object to be measured with X-rays and detects the X-rays transmitted through the object to be measured to destroy the internal information (for example, internal structure) of the object to be measured. Get without. X-ray equipment for industrial parts such as mechanical parts and electronic parts is called an industrial X-ray inspection equipment.

FIG. 1 is a diagram showing an example of the configuration of the X-ray apparatus 100 according to the present embodiment. For convenience of explanation, the coordinate system including the X-axis, the Y-axis, and the Z-axis is set as shown in the figure.
The X-ray apparatus 100 includes a housing 1, an X-ray source 2, a mounting portion 3, a detector 4, and a control device 5. The housing 1 is arranged so that its lower surface is substantially parallel (horizontal) to the floor surface of a factory or the like. The X-ray source 2, the mounting portion 3, and the detector 4 are housed inside the housing 1. The housing 1 contains an X-ray shielding material so that X-rays do not leak to the outside of the housing 1. Lead is contained as an X-ray shielding material.

The X-ray source 2 emits X-rays in the Z-axis + direction along the optical axis Zr parallel to the Z-axis with the emission point P shown in FIG. 1 as the apex according to the control by the control device 5. This emission point P coincides with the focal position of the electron beam propagating inside the X-ray source 2 described later. That is, the optical axis Zr is an axis connecting the emission point P, which is the focal position of the electron beam of the X-ray source 2, and the center of the imaging region of the detector 4, which will be described later. The X-rays emitted from the X-ray source 2 are any of a conical X-ray (so-called cone beam), a fan-shaped X-ray (so-called fan beam), and a linear X-ray (so-called pencil beam). But it may be. When a fan beam and a pencil beam are used, it is necessary to perform a scanning operation in which the beam and the object S to be measured are relatively moved in order to inspect the entire object S to be measured. The X-ray source 2 emits one X-ray photon at a time when viewed on a short time scale. The X-ray source 2 irradiates at least one of, for example, an ultrasoft X-ray of about 50 eV, a soft X-ray of about 0.1 to 2 keV, an X-ray of about 2 to 20 keV, and a hard X-ray of about 20 to several MeV. .. It should be noted that the scattering is remarkable in the hard X-ray region.

The mounting unit 3 includes a mounting table 31 on which the object S to be measured is placed, and a manipulator unit 36 including a rotation driving unit 32, an X-axis moving unit 33, a Y-axis moving unit 34, and a Z-axis moving unit 35. , Is provided on the Z-axis + side of the X-ray source 2. The mounting table 31 is rotatably provided by the rotation driving unit 32. As will be described later, when the rotation axis Yr by the rotation drive unit 32 moves in the X-axis, Y-axis, and Z-axis directions, the mounting table 31 moves together. The rotation drive unit 32 is composed of, for example, an electric motor or the like, and rotates the mounting table 31 by the rotational force generated by the electric motor controlled and driven by the control device 5 described later. The rotation axis Yr of the mounting table 31 is parallel to the Y axis and passes through the center of the mounting table 31. The X-axis moving unit 33, the Y-axis moving unit 34, and the Z-axis moving unit 35 are controlled by the control device 5 to move the mounting table 31 in the X-axis direction, the Y-axis direction, and the Z-axis direction, respectively. The Z-axis moving unit 35 is controlled by the control device 5 so that the distance from the X-ray source 2 to the object to be measured S is a distance corresponding to the enlargement ratio of the object to be measured S in the captured image. The pedestal 31 is moved in the Z-axis direction.

The detector 4 shown in FIG. 1 is provided on the Z-axis + side of the mounting table 31. That is, the mounting table 31 is provided between the X-ray source 2 and the detector 4 in the Z-axis direction. The detector 4 includes a scattering unit 41 and an absorbing unit 42. The scattering unit 41 is provided on the Z direction − side of the absorbing unit 42, that is, on the side closer to the object S to be measured. X-rays emitted from the X-ray source 2 and transmitted through the object to be measured S placed on the mounting table 31 or scattered inside the object S to be measured are incident on the scattering unit 41. In the following description, the X-rays that pass through the inside of the object S to be measured and are incident on the detector 4 are scattered inside the transmitted X-rays and the object S to be measured and are scattered inside the detector 4. The X-rays incident on are called scattered X-rays.

The scattering unit 41 has, for example, the same configuration as the known Japanese Patent Application Laid-Open No. 2017-67601. That is, as shown in FIG. 2, the scattering unit 41 has a chamber 411, a pixel electrode 412, and a drift electrode 413. Inside the chamber 411, a mixed gas of a rare gas such as argon or xenone and a gas having a dimming action including alkane or carbon dioxide, which is a gas at room temperature such as ethane or methane, is sealed. The chamber 411 is not limited to the one in which the mixed gas is sealed, and may be one in which a single gas is sealed. The pixel electrode 412 is provided on the Z-direction + side surface of the chamber 411, and the drift electrode 413 is provided on the Z-direction − side surface of the chamber 411. The pixel electrode 412 has a plurality of pixels arranged two-dimensionally on the XY plane. In the chamber 411, an electric field is formed between the pixel electrode 412 and the drift electrode 413 by the voltage applied to the pixel electrode 412 and the drift electrode 413.

When X-rays from the object S to be measured enter the scattering unit 41, the X-rays (photons) collide with the electrons constituting the gas particles in the chamber 411 with a certain probability and are scattered by Compton. The X-ray photons scattered by Compton emit the scattering unit 41 in a state where the traveling direction is changed, and are incident on the absorbing unit 42 provided on the + side in the Z direction. On the other hand, the X-rays that are not Compton scattered in the chamber 411 exit the scattering unit 41 without changing the traveling direction in the chamber 411 and enter the absorbing unit 42.

When X-rays are Compton scattered in the chamber 411, the electrons collided with the X-ray photons proceed as rebound electrons (charged particles), and an electron cloud is generated along the tracks of the rebound electrons. The electrons constituting the electron cloud are attracted to the + side in the Z direction by the electric field formed by the pixel electrode 412 and the drift electrode 413, and are incident on the pixel electrode 412. The pixel electrode 412 has a plurality of pixels including a cathode electrode extending in the X direction and an anode electrode arranged in a plurality of openings provided in the cathode electrode, and is composed of pixels in which electrons constituting an electron cloud are incident. The electric signal is output to the control device 5.

The X-rays emitted from the scattering unit 41 enter the absorbing unit 42. The absorption unit 42 is composed of a scintillator unit containing a known scintillation substance, a light receiving unit that amplifies and receives light emitted from the scintillator unit, and the like. The X-rays incident on the incident surface of the scintillator section are absorbed by the scintillator section of the absorption section 42 and emit fluorescence, and the light energy of the emitted fluorescence is amplified by the photomultiplier tube in the light receiving section and converted into electrical energy. It is converted and output as an electric signal to the control device 5.

The absorption unit 42 of the detector 4 has a structure in which a plurality of pixels of the scintillator unit and the light receiving unit are two-dimensionally arranged so that the plurality of pixels of the scintillator unit and the light receiving unit correspond to each other. It is arranged in. As a result, the intensity data of X-rays emitted from the X-ray source 2 and transmitted, scattered, or partially absorbed by the object S to be measured can be collectively acquired in a plurality of pixels, and the intensity data of each can be acquired. Intensity distribution data can be obtained by integrating. It should be noted that each of the plurality of pixels of the absorption unit 42 is arranged so as to correspond to each of the plurality of pixels of the pixel electrode 412 of the scattering unit 41.
The scintillator unit of the absorption unit 42 may not have a structure in which a plurality of pixels are two-dimensionally arranged.

The control device 5 includes a microprocessor and peripheral circuits thereof, and by reading and executing a control program stored in advance in a storage medium (for example, a flash memory) (not shown), the X-ray device 100 Control each part. The control device 5 is an object to be measured based on an X-ray control unit 51 that controls the operation of the X-ray source 2, a mounting table control unit 52 that controls the drive operation of the manipulator unit 36, and an electric signal output from the detector 4. It has an image generation unit 53 that generates X-ray projection image data of S, and a specific unit 54. The identification unit 54 determines whether or not the X-rays from the X-ray source 2 are scattered inside the object S to be measured based on the electric signals output from the scattering unit 41 and the absorbing unit 42. Based on the determination result, the identification unit 54 identifies the scattered X-rays scattered in the object S to be measured, or identifies the X-rays other than the scattered X-rays among the X-rays from the object S to be measured. That is, the identification unit 54 specifies whether or not the X-rays incident on the detector 4 are X-rays scattered by the object S to be measured. The image generation unit 53 generates intensity distribution data of X-rays other than the scattered X-rays specified by the specific unit 54, that is, transmitted X-rays not scattered in the object S to be measured and X-rays partially absorbed. , Select as internal information of the object S to be measured when generating X-ray projection image data. The image reconstruction unit 56 projects a relatively different X-ray irradiation direction with respect to the object S to be measured, and based on the plurality of X-ray intensity distribution data obtained thereby, a known image reconstruction processing method is used. By using it, a reconstructed image of the object S to be measured is generated. By the image reconstruction process, cross-sectional image data and three-dimensional data which are the internal structure (cross-sectional structure) of the object S to be measured are generated. The cross-sectional image data includes structural data of the object S to be measured in a plane parallel to the XZ plane. The image reconstruction process includes a back projection method, a filter correction back projection method, a successive approximation method, and the like.

Hereinafter, a procedure for determining whether or not X-rays are scattered in the object S to be measured by the specific unit 54 and specifying at least one of the transmitted X-rays and the scattered X-rays will be described with reference to FIG. FIG. 2 shows a case where an electric signal is detected by a plurality of pixels 412a to 412c of the pixel electrode 412 of the scattering unit 41 and an electric signal is detected by one pixel 42a of the absorbing unit 42. It is assumed that the pixel electrode 412 detects the electric signal in the order of the pixels 412c, 412b, and 412a.

As described above, in the pixel electrode 412, the electron cloud generated along the track of the rebounding electrons generated by the Compton scattering of X-rays in the scattering unit 41 is moved to the + side in the Z direction by the drift electric field in the chamber 411. The signal is detected when these electrons are attracted and reach the pixel electrode 412. For example, the three-dimensional shape of the electron cloud in the chamber 411 can be obtained from the time when electrons are sequentially detected in the pixels 412c, 412b, and 412a and the two-dimensional positions of the pixels 412c, 412b, and 412a. ..
The procedure for obtaining the three-dimensional shape of the electron cloud will be specifically described. The moving speed Vd at which any electron constituting the electron cloud moves in the Z direction along the drift electric field is determined by the strength of the drift electric field. The moving speed Vd is considered to be substantially constant within the chamber 411. Let Td be the time for drifting from the drift electrode 413 to the pixel electrode 412. The signal is detected when the electrons reach the pixel electrode 412.

Since the time required for the X-rays to reach the absorption unit 42 after Compton scattering and the time required for the electron cloud to be generated are extremely short compared to Td, the time required for Compton scattering and the scattered X-rays There is no problem in considering that the time when the electron cloud reaches the absorption part and the time when the electron cloud is formed are substantially the same. Regarding this point, assuming that the thickness D of the chamber 411 of the scattering unit 41 in the Z direction is 300 mm, for example, the time required for X-rays to enter the drift electrode perpendicularly, pass through the chamber 411, and reach the absorbing unit 42. Is (0.3 [m] / 3) × ^10-8 , that is, 1 [nsec]. Even when the initial velocity of the rebounding electrons is set to 1/10 of the high velocity, the time from the Compton scattering of X-rays to the formation of the electron cloud is about 10 [nsec] at the longest. It is considered short. Therefore, the time when the Compton-scattered X-rays are absorbed by the absorption unit 42 is regarded as the time when the Compton-scattered X-rays are absorbed, and t = 0.

With respect to the time t = 0, the time when the electric signal is read from the cathode electrode Xi (i = 1, m) and the anode electrode Yj (j = 1, n) of the pixel electrode 412 is defined as t = t _sig . That is, it is assumed that the voltage changes at the cathode electrode and the anode electrode at time t = t _sig. In this case, the position where the electrons that caused the voltage change in the pixels (Xi, Yj) of the pixel electrode 412 existed in the chamber 411 at the start of drift, that is, at the time of the generation of the electron cloud is when the reference in the Z direction is the pixel electrode 412. It is considered that (Xi, Yj, Vd × t _sig). It is assumed that the potentials of the cathode electrode and the anode electrode _{change at the same time at time t sig. As a result, (Xi, Yj, Vd × t sig} ) can be calculated for each pixel (Xi, Yj) of the pixel electrode 412. _{In this way, the third order of the electron cloud is based on the time t sig} at which the voltage is detected when the plurality of electrons constituting the electron cloud drift and reach the pixel electrode 412, and the position of the pixel on the pixel electrode 412. The original shape (track P1) can be obtained.

Among the electrons constituting the electron cloud, the time when the electron closest to the Compton scattered position drifts and reaches the pixel electrode is the longest (t = t _sig0 ). That is, the position (Xi, Yj, Vd × t _sig0 ) where the electron detected at time t = t _sig0 existed at the start of drift is the Compton scattering position (scattering point T1). Further, where the next magnitude time detected electrons at _{t = t sig1} is the is present at the start drift of the time _{t = t sig0} becomes _{(Xi, Yj, Vd × t} sig1). From these two positions, the initial traveling direction F1 of the rebound electron from the scattering point T1 is obtained.
The reference in the Z direction may be the position of the drift electrode 413. In this case, the position in the chamber 411 corresponding to the voltage-changed pixel is (Xi, Yj, D (Td-t _sig ) / Td). It becomes. In this case, the position (Vd × t _{sig ) in the Z direction when the time t = t sig} is the minimum becomes the scattering point T1. Further, the initial traveling direction F1 of the rebound electron is obtained based on a plurality of positions (Xi, Yj, D (Td-t _sig ) / Td) when the value of time t = t _{sig is smaller than a predetermined value.}
In other words, the scattering unit 41 functions as a first detector that detects the initial traveling direction F1 of the rebounding electrons generated by Compton scattering of X-rays at the scattering point T1 in the chamber 411.

It is determined that the X-rays scattered by Compton at the scattering point T1 change the traveling direction and enter the pixel 42a of the absorption unit 42. That is, the pixel 42a of the absorption unit 42 is the incident position of the X-ray incident on the absorption unit 42, and the absorption unit 42 receives the X-ray incident from the scattering unit 41 and detects the incident position of the incident X-ray. Functions as a second detector. In this way, it is possible to grasp the traveling direction of the X-rays scattered by Compton and the shape of the electron cloud generated by the rebounding electrons due to the Scattered Compton. Further, the traveling direction of the X-rays scattered by Compton is obtained based on the pixels 42a of the absorption unit 42 and the scattering point T1.
The recoil electrons generally draw irregular zigzag tracks due to Rutherford scattering many times, but in FIG. 2, for the sake of simplicity, the recoil electrons P1 which is the path of the recoil electrons after Compton scattering is smooth. It is shown in a curved shape.

Based on the above description, the specific unit 54 has the length of the track P1 (maximum length: flight) based on the positional relationship of the pixels 412a to 412c of the pixel electrodes 412 of the scattering unit 41 and the shape of the electron cloud obtained from the detection time. Approximately) is calculated. The counter-jumping electrons traveling in the chamber 411 gradually lose energy and finally stop. Therefore, the energy of the rebound electron can be obtained from the range. In this way, the specifying unit 54, the energy of the recoil electrons from projected range, i.e. X-rays incident on the chamber 411 to calculate the energy E1 lost with the Compton scattering (= m e _v ^2). Here, rest mass _{m e} of the electron _is ^{m e = 9.1 × 10 -31 (} kg). It is assumed that the data related to the correspondence between the range and the energy is stored in the memory (not shown) in advance as energy data. The identification unit 54 calculates the energy E2 (= hv') of the X-ray that reaches the pixel 42a after Compton scattering in the chamber 411 based on the electric signal detected by the pixel 42a of the absorption unit 42. Here, h is Planck's constant.

なお、ｃは真空中の光速、θはコンプトン散乱角、φは反跳電子の出射角（初期進行方向の方位角）である。また、γはローレンツ因子であり以下の式（４）で表される。

The X-rays incident on the chamber 411, the X-rays scattered by Compton, and the rebound electrons are represented by the following equations (1) to (3) using the law of conservation of momentum and the law of conservation of energy.

Note that c is the speed of light in vacuum, θ is the Compton scattering angle, and φ is the emission angle of the rebound electron (azimuth in the initial traveling direction). Further, γ is a Lorentz factor and is represented by the following equation (4).

特定部５４は、チャンバー４１１に入射したＸ線のエネルギーＥ０（＝ｈｖ）を、算出したエネルギーＥ１と検出されたエネルギーＥ２とを加算することにより算出する。特定部５４は、算出されたエネルギーＥ０と検出されたエネルギーＥ２とを上記式（５）に用いて、チャンバー４１１におけるコンプトン散乱によるＸ線の進行方向の変化角度であるコンプトン散乱角θを算出する。特定部５４は、ピクセル電極４１２の画素４１２ａ〜４１２ｃのうち、少なくとも散乱点Ｔ１のＺ方向の投影位置に近い位置に相当する画素４１２ａ、４１２ｂの位置関係と電子を検出した時間差により、散乱点Ｔ１から出射した反跳電子の進行方向（初期進行方向の方位角）を得ることができる。なお、好ましくは、反跳電子が１回目のラザフォード散乱をするまでの位置に相当する直線状に並んだ複数の画素群からの出力に基づいて方位角を得るのがよく、方位角の検出精度を向上させることができる。 The scattering angle θ is expressed by the following equations (5) according to the above equations (1) to (4).

The identification unit 54 calculates the energy E0 (= hv) of the X-rays incident on the chamber 411 by adding the calculated energy E1 and the detected energy E2. The specific unit 54 uses the calculated energy E0 and the detected energy E2 in the above equation (5) to calculate the Compton scattering angle θ, which is the change angle of the X-ray traveling direction due to Compton scattering in the chamber 411. .. The specific unit 54 has a scattering point T1 based on the positional relationship of the pixels 412a and 412b corresponding to at least a position close to the projection position in the Z direction of the scattering point T1 among the pixels 412a to 412c of the pixel electrode 412 and the time difference between detecting electrons. The traveling direction (azimuth angle in the initial traveling direction) of the rebounding electrons emitted from the above can be obtained. It is preferable to obtain the azimuth angle based on the output from a plurality of linearly arranged pixel groups corresponding to the positions until the rebound electrons scatter for the first Rutherford scattering, and the azimuth angle detection accuracy. Can be improved.

Since the position of the scattering point T1 is known from the three-dimensional shape of the electron cloud that has already been obtained, the path L2 of the X-rays scattered in the chamber 411 and incident on the absorbing unit 42 from the position of the scattering point T1 and the position of the pixel 42a. Is decided. In the illustrated example, the path L2 is a path connecting the position of the scattering point T1 and the position of the pixel 42a. The surface (scattering surface) including the path L2 of the scattered X-rays and the initial traveling direction F1 of the backscattering electrons is determined by the path L2 and the initial traveling direction F1 of the backscattering electrons emitted from the scattering point T1. The scattering direction, which is the traveling direction of X-rays from the scattering point T1, is obtained based on the position of the scattering point T1 and the position of the pixel 42a, and the scattering surface is based on the scattering direction and the initial traveling direction F1 of the rebounding electron. May be determined. In this case, the scattering direction may be calculated based on the course L2. Further, an example in which the scattering surface is determined using the initial traveling direction F1 of the backscattering electrons is shown, but the scattering surface is determined using the track P1 of the backscattering electrons and the path L2 or the scattering direction of the scattered X-rays. You may. Since the X-ray path L1 incident on the chamber 411 exists in the above-mentioned scattering plane, the course L1 and the course L2 intersect at the scattering point T1 at a Compton scattering angle θ in the scattering plane. In this way, the path L1 can be obtained, and when the X-ray source 2 is on or near the extension of the course L1, the X-ray emitted from the X-ray source 2 is the object S to be measured. It is determined that it has entered the chamber 411 without being scattered inside. This case is shown in FIG. 3 (a). FIG. 3A shows a case where an electric signal is output from the pixels 412a to 412c of the scattering unit 41 and the pixels 42a of the absorbing unit 42, as in FIG. In such a case, the X-ray source 2 exists on or near the extension of the path L1. On the other hand, when the X-ray source 2 is not on or near the extension of the path L1, the X-rays emitted from the X-ray source 2 are scattered inside the object S to be measured and the traveling direction is changed. Is determined to have entered the chamber 411. This case is shown in FIG. 3 (b). FIG. 3B shows a case where an electric signal is output from the pixels 412a and 412f of the scattering unit 41 and the pixels 42a of the absorbing unit 42. In FIG. 3B, the initial traveling direction of the rebounding electrons is F2, and X-rays are scattered at the scattering point T3 inside the object S to be measured. In such a case, the X-ray source 2 does not exist on or near the extension of the path L1.

式（６）を用いて方位角（出射角）φを算出した場合、上記の進路Ｌ１は、散乱点Ｔ１を頂点とし反跳電子の初期進行方向Ｆ１を中心軸として、この中心軸と母線とのなす角がφの円錐と、散乱点Ｔ１を頂点とし進路Ｌ２を中心軸とし、この中心軸と母線とのなす角がθの円錐との接線に相当する。
なお、上記の散乱角θと方位角φの少なくとも一方が算出されれば、チャンバー４１１に入射したＸ線の進路Ｌ１を決定することができるが、散乱角θと方位角φの両方を算出することにより、進路Ｌ１をより高精度に決定することが可能となる。 In addition, the specific unit 54 can calculate the azimuth angle φ of the initial travel of the rebound electron by using the following equation (6) obtained from the above equations (1) to (4).

When the azimuth angle (emission angle) φ is calculated using the equation (6), the above-mentioned path L1 has the scattering point T1 as the apex and the initial traveling direction F1 of the rebound electron as the central axis, and the central axis and the generatrix. The angle between the cone and the cone with the scattering point T1 as the apex and the path L2 as the central axis corresponds to the tangent line between the central axis and the generatrix.
If at least one of the above scattering angle θ and azimuth angle φ is calculated, the course L1 of the X-ray incident on the chamber 411 can be determined, but both the scattering angle θ and the azimuth angle φ are calculated. This makes it possible to determine the course L1 with higher accuracy.

As described above, when it is determined that the X-ray source 2 exists on the path L1 or in the vicinity of the path L1, the specific unit 54 determines that the X-rays are not scattered by the object S to be measured and scatters them. Identify that it is an X-ray other than an X-ray. On the other hand, when the X-ray source 2 is not located on the path L1 and in the vicinity of the path L1, the specific unit 54 determines that the X-rays are scattered by the object S to be measured, and determines that the X-rays are scattered X-rays. Identify.

ここで、電子の静止質量ｍ_ｅ＝９．１×１０^−３１（ｋｇ）、真空中の光速ｃ＝３．０×１０^８（ｍ）として、ｍ_ｅｃ^２＝５１１（ｋｅＶ）である。 Next, a process performed by the specific unit 54 for specifying whether or not X-rays are scattered by the object S to be measured and specifying the scattered X-rays and the X-rays other than the scattered X-rays (hereinafter referred to as the specific process). (Call) will be explained.
In the present embodiment, assuming that the energy ET0 of the X-rays incident on the scattering unit 41 is constant, the Compton scattering angle θ calculated by the equation (5) satisfies the following equation (7).

Here, the electron rest mass ^{_{m e = 9.1 × 10 -31 (}} kg), as the speed of light in vacuum ^{c = 3.0 × 10 8 (m} ), m e c 2 = 511 (keV).

Assuming that the energy ET0 is the sum of the energy E1 and the energy E2, the detection accuracy Δθ satisfies the relationship of the equation (8) obtained by differentiating the equation (7).

なお、

であるものとする。
例えば、Ｘ線源２から放射されて散乱部４１に入射するＸ線のエネルギーを５１１ｋｅＶ、エネルギー分解能を３パーセント、コンプトン散乱角θが２０°と仮定した場合、検出精度Δθは５．３°となる。また、エネルギー分解能を１パーセントとした場合には、検出精度Δθは１．８°となる。なお、散乱部４１の射出面（ピクセル電極４１２側）と吸収部４２との間のＺ方向の距離を２０ｍｍ、散乱部４１のピクセル電極４１２や吸収部４２の各画素のサイズを２００μｍ×２００μｍと仮定した場合、散乱角θの分解能は１０ｍｒａｄとなる。 From these equations (7) and (8), the detection accuracy Δθ is calculated by the following equation (9).

In addition, it should be noted

Suppose that
For example, assuming that the energy of the X-ray emitted from the X-ray source 2 and incident on the scattering unit 41 is 511 keV, the energy resolution is 3%, and the Compton scattering angle θ is 20 °, the detection accuracy Δθ is 5.3 °. Become. Further, when the energy resolution is 1%, the detection accuracy Δθ is 1.8 °. The distance in the Z direction between the ejection surface (pixel electrode 412 side) of the scattering unit 41 and the absorbing unit 42 is 20 mm, and the size of each pixel of the pixel electrode 412 of the scattering unit 41 and the absorbing unit 42 is 200 μm × 200 μm. Assuming, the resolution of the scattering angle θ is 10 mrad.

The identification unit 54 provides information on the energy E1 calculated based on the output of the scattering unit 41 of the detector 4, the position of the pixel of the pixel electrode 412 that outputs the electric signal, and the time t _{sig that the electric signal is output from the pixel.} To get. The specific unit 54 calculates a track, which is a three-dimensional shape of an electron cloud, based on _{the position and time t sig} of each pixel that outputs an electric signal at the pixel electrode 412. The position (Xi, Yj) of the pixel that output the electric signal at the latest time t _sig0 of the time t _{sig , and the position Vd × t sig0 in} the Z direction from the position (Xi, Yj) to the point where the electron cloud was generated. The position (Xi, Yj, Vd × t _sig0 ) determined by the above corresponds to the scattering point T1. In FIGS. 2, 3 (a), and 3 (b), _{a position separated from the position of the pixel 412a by the calculated distance Vd × t sig in the} Z-axis − direction corresponds to the scattering point T1. Particular unit 54, positions of a plurality of electronic value of time _{t = t sig} correspond to the time close to _{t sig0 (Xi, Yj, Vd} × t sig) based on the calculated initial travel direction F1 of the recoil electrons To do.

The identification unit 54 is each of the energy E2 output from the absorption unit 42 of the detector 4, the position of the pixel that output the energy E2 (XAj, YAj, ZAj), and the time Tj when the energy E2 is output from the absorption unit 42. Get information. The pixel positions (XAj, YAj, ZAj) correspond to the absorption points T2 in each of FIGS. 2, 3 (a), and 3 (b). The time Tj corresponds to the time when the X-ray is incident on the absorption unit 42.

The specific unit 54 includes X-rays incident on the scattering unit 41 and X-rays incident on the absorbing unit 42 based on _{the time Tj + t sig} at which the electric signal is output from the pixel 412a and the time Tj at which the energy E2 is output. It is determined whether or not is the same X-ray photon emitted from the X-ray source 2 at a certain timing. Specifically, the specific unit 54 has energy calculated based on an electric signal from the scattering unit 41 when the time difference (that is, t _{sig ) between the time Tj + t sig and Tj is within the predetermined time T1 (= Td).} It is determined that the energy E1 and the energy E2 output from the absorption unit 42 are output for the same X-ray photon. For example, the predetermined time T1 is determined by calculation, various tests, simulations, etc., and is stored in advance in a memory (not shown). When the time Tj _{+ t sig} is the time difference between the Tj _{t sig} exceeds a predetermined time T1, the specific part 54, and the energy E1 and the calculated energy E2 outputted from the absorption unit 42, the same X-ray photons Is not output. When the time difference between the time t _sig and Tj exceeds the predetermined time T1, the specific unit 54 processes the calculated energy E1 and the energy E2 output from the absorption unit 42 to specify scattered X-rays. Do not use for. Here, if the distance in the Z direction between the scattering unit 41 and the absorbing unit 42 is set to 20 mm as described above, the time difference t _{sig between the time Tj + t sig} and Tj is about 0.1 nsec. The distance between the scattering unit 41 and the absorbing unit 42 can be determined to a preferable value based on the pixel size of the detector 4 and the detection accuracy Δθ represented by the above equation (9). it can.

When it is determined that the time difference t _sig between the time Tj + t _sig and Tj is within the predetermined time T1, the specific unit 54 determines the Compton scattering angle θ based on the calculated energy E1 and the energy E2 output from the absorption unit 42. Determine if to calculate. The case where the Compton scattering angle θ should not be calculated will be described below.

The readout circuit of the detector 4 outputs an electric signal from the scattering unit 41 and outputs energy E2 from the absorbing unit 42 at predetermined time intervals. Referred to herein as the predetermined time and the energy output interval T _O. In the present embodiment, when the fluorescent light emission time of the scintillator and tens _nsec, a T O = 100 nsec. The above predetermined time T1 needs to be set to less than the energy output interval T _O. That is,
T1 ≤ _TO
Set to meet. Thus, the energy output within the interval T _O, the electrical signal is output from the scattering portion 41, it can be from the absorption unit 42 so that the energy E2 is output.

X-ray photons are emitted one by one from the X-ray source 2 when viewed on a short time scale. Energy information from the detector 4 and the average emission interval Te from the X-ray source 2 emits X-ray photons (i.e., electrical signals from the pixels 42a of the pixel electrode 412 and the absorber 42) the relationship between the output interval T _O for outputting Will be described. X-ray photons emitted from the X-ray source 2 by one radiation enter the chamber 411 and the absorption unit 42, respectively, and output energy information from all the pixels of the scattering unit 41 and the absorbing unit 42 of the detector 4. The process until completion is called one event. That is, obtaining energy information for one frame based on a single X-ray photon emitted from the X-ray source 2 from the detector 4 is called one event. In order to correctly obtain the Compton scattering angle θ in the chamber 411, only the detected value of a single X-ray photon emitted from the X-ray source 2 during one event is used in the process described later. This is because if X-ray photons emitted two or more times are incident on the detector 4 at the same time, the Compton scattering angle θ may not be obtained correctly. This is called event separation. Thus, the radiation interval Te is required to be greater than the energy output interval T _O is the time required to obtain the energy information of one frame. That is,
_TO ≤ Te
Must be met.

The case where the Compton scattering angle θ cannot be obtained correctly because the events cannot be separated will be described below. 4, radiation distance Te from the X-ray source 2 shows the case energy output interval T _O less. Note that FIG. 4 shows a case where two X-ray photons are emitted from the X-ray source 2 in different directions at substantially the same time for the sake of simplicity. One X-ray photon (first X-ray photon) travels from the X-ray source 2 along the path L11, passes through the object S to be measured, enters the chamber 411 of the scattering unit 41, and scatters Compton at the scattering point T31. The course changes to L12 and is incident on the pixel 42a of the absorption unit 42. At the scattering point T31, counter-jumping electrons having the initial traveling direction of F3 are generated, and an electric signal is output from the pixels of the pixel electrode 412 to which the electrons of the generated electron cloud arrive according to the tracks. In FIG. 4, the scattering point T31 exists in the Z-axis-direction of the pixel 412a of the pixel electrode 412. On the other hand, another X-ray photon (second X-ray photon) is emitted from the X-ray source 2 immediately after (almost at the same time) the emission of the first X-ray photon. The second X-ray photon travels on a path L21 different from the path L11, passes through the object S to be measured, enters the chamber 411, scatters Compton at the scattering point T32, changes the course to L22, and changes to the absorption unit 42. It is incident on the pixel 42a of. At the scattering point T32, counter-jumping electrons having the initial traveling direction of F4 are generated, and an electric signal is output from the pixels of the pixel electrode 412 to which the electrons of the generated electron cloud arrive according to the tracks. In FIG. 4, the pixel 412x of the pixel electrode 412 exists at the scattering point T32 in the Z-axis-direction.

That is, different X-ray photons scattered by Compton at the scattering points T31 and T32 detected at the two different pixels 412a and 412x of the scattering unit 41 are incident on the same pixel 42a of the absorbing unit 42 as the same event. In such a case, the Compton scattering angle θ cannot be calculated correctly based on the energy information output from the scattering unit 41 and the absorbing unit 42. In such a state, for example, a large number of X-ray photons are emitted from the X-ray source 2, and immediately after the X-ray photons start traveling through L11 emitted from the X-ray source 2, another X-ray photon is X-rayed. It is considered that it occurs when it is emitted from the radiation source 2.

The procedure for determining such a state will be described below. In a single event, the specific unit 54 determines whether or not the sum of the energy E1 calculated based on the output from the scattering unit 41 and the energy E2 from the absorbing unit 42 exceeds the predetermined value ETL. The ETL value is set based on the energy of a single X-ray photon emitted from the X-ray source 2 under normal conditions. For example, it is set to a value obtained by adding the energy resolution to the maximum value of the X-ray energy from the energy of the X-ray source 2 determined by the drive acceleration voltage. When the sum of the energy E1 and the energy E2 exceeds the predetermined value ETL, the specific unit 54 determines that the energy E1 and the energy E2 are output based on a plurality of X-ray photons as shown in FIG. To do. In this case, the specifying unit 54 does not use the energy E1 calculated based on the output from the scattering unit 41 and the energy E2 output from the absorbing unit 42 to specify the scattered X-rays.

On the other hand, when the sum of the energy E1 and the energy E2 is equal to or less than the predetermined value ETL, a single track is detected in the scattering unit 41, and the energy E2 is detected by a single pixel in the absorbing unit 42, that is, almost the same. When there are no energy values at a plurality of places at the time, it is determined that these energy information is normally output based on a single X-ray photon. In this case, the specific unit 54 uses the energy E1 calculated based on the output from the scattering unit 41 and the energy E2 from the absorbing unit 42, and the Compton scattering angle is based on the above equation (5). θ is calculated, and as described with reference to FIGS. 2 and 3, it is determined whether or not the X-rays emitted from the X-ray source 2 are scattered inside the object S to be measured. On the other hand, even if the sum of the energy E1 and the energy E2 is equal to or less than the predetermined value ETL, when a plurality of different tracks are detected at approximately the same time in the scattering unit 41, or in a plurality of pixels at different positions in the absorbing unit 42. When the energy values are detected at approximately the same time, the identification unit 54 does not use the energy E1 and the energy E2 to specify the scattered X-rays.

That is, the specific unit 54 uses the calculated Compton scattering angle θ, the initial traveling direction F1 of the rebounding electron, the scattering point T1, and the position (XAj, YAj, ZAj) of the pixel 42a detected by the absorbing unit 42. Then, it is determined whether or not the X-ray source 2 exists on or near the path L1 shown in FIG. Specifically, the specific unit 54 is based on the initial traveling direction F1 of the rebound electron, the position of the scattering point T1, the position (XAj, YAj, ZAj), and the calculated Compton scattering angle θ. A straight line passing through the position and position (XAj, YAj, ZAj) of the scattering point T1 is set as the course L1 on a plane including the initial traveling direction F1, the position of the scattering point T1, and the position (XAj, YAj, ZAj). To do. The specific unit 54 determines whether or not the X-ray source 2 exists on the course L1 or at a position where the distance from the course L1 is smaller than a predetermined distance. As described above, the predetermined distance is appropriately determined based on the size of each pixel of the pixel electrode 412 and the pixel 42a, the arrangement of the X-ray source 2, the object S to be measured, the detector 4, etc. in the X-ray apparatus 100. It is preferable to set it.

When the specific unit 54 determines that the X-ray source 2 exists on the path L1 or at a position where the distance from the path L1 is smaller than a predetermined distance, the X-ray emitted from the X-ray source 2 is the object to be measured. It is determined that the X-rays have reached the absorption unit 42 after being incident on the scattering unit 41 without being scattered inside the S and being Compton scattered by the scattering unit 41, and it is specified that the X-rays are other than the scattered X-rays. In this case, the image generation unit 53 generates X-ray intensity distribution data based on the energy information (electrical signal) output from the absorption unit 42, and the object to be measured when generating the X-ray projection image data. Used as internal information of S. That is, the image generation unit 53 uses it as internal information of the object S to be measured. On the other hand, when the specific unit 54 determines that the X-ray source 2 does not exist on the path L1 or at a position where the distance from the path L1 is smaller than a predetermined distance, the X-rays emitted from the X-ray source 2 are emitted. It is determined that the object to be measured S is scattered inside the object S, is incident on the scattering unit 41, is Compton scattered by the scattering unit 41, and then reaches the absorbing unit 42, and is identified as scattered X-rays. In this case, the image generation unit 53 does not generate X-ray intensity distribution data based on the energy information (electric signal) output from the absorption unit 42. That is, the image generation unit 53 does not use it as the internal information of the object S to be measured when generating the X-ray projection image data.

By performing the above-mentioned scattering detection process, the X-ray projection image data generated by the image generation unit 53 is suppressed from blurring such as edges of the object S to be measured due to the scattered X-rays that caused scattering. As a result, a high-quality image of the object S to be measured can be generated.

A part of the X-rays emitted from the X-ray source 2 and incident on the scattering unit 41 of the detector 4 may be incident on the absorbing unit 42 without being scattered by Compton at the scattering unit 41. In this case, in a single event, the absorption unit 42 outputs the X-ray energy information, but the scattering unit 41 does not output the electric signal. In such a case, the image generation unit 53 does not generate X-ray intensity distribution data based on the energy information (electric signal) output from the absorption unit 42. That is, the image generation unit 53 does not use it as the internal information of the object S to be measured when generating the X-ray projection image data.

The image reconstruction unit 56 is known for a plurality of X-ray projection image data generated for each predetermined measurement angle while changing the irradiation angle of X-rays to be irradiated from the X-ray source 2 to the object S to be measured. Image reconstruction processing is performed to generate a reconstructed image. As a result, cross-sectional image data and three-dimensional data, which are the internal structure (cross-sectional structure) of the object S to be measured, are generated.

The operation performed by the control device 5 will be described with reference to the flowchart shown in FIG. The process shown in FIG. 5 is performed by executing a program on the control device 5. This program is stored in a memory (not shown), and is started and executed by the control device 5.
In step S1, the X-ray control unit 51 of the control device 5 causes the X-ray source 2 to start irradiating X-rays, and proceeds to step S2. In step S2, the specific unit 54 of the control device 5 acquires the electric signal output from the pixel electrode 412 of the scattering unit 41 of the detector 4, detects the track of the rebound electron, and the maximum length of the track and the anti-track. The initial traveling direction F1 of the jumping electron, the scattering point T1, and the energy E1 are calculated, and the process proceeds to step S3. In step S3, the specific unit 54 acquires the X-ray energy E2 output from the pixels at the positions (XAj, YAj, ZAj) of the absorption unit 42, and proceeds to step S4.

_{In step S4, the specific unit 54 determines whether or not the time difference ΔTij between the time Tj + t sig} at which the X-ray is incident on the scattering unit 41 and the time Tj at which the X-ray is incident on the absorbing unit 42 is equal to or less than a predetermined value T1. To do. When the time difference ΔTij between the time Tj and Tj + t _sig is equal to or less than the predetermined value T1, that is, it is determined that the X-rays incident on the scattering unit 41 and the X-rays incident on the absorbing unit 42 are in the same event. If so, step S4 is determined to be affirmative and the process proceeds to step S5. When the time difference ΔTij between the time Tj and Tj + t _sig exceeds a predetermined value T1, that is, it is determined that the X-rays incident on the scattering unit 41 and the X-rays incident on the absorbing unit 42 are not in the same event. If this is the case, step S4 is determined to be negative, and the process proceeds to step S10, which will be described later.

In step S5, it is determined whether or not the X-rays incident on the absorption unit 42 have passed through different positions of the object S to be measured. When the sum ET of the energy E1 calculated in step S2 and the energy E2 from the absorption unit 42 acquired in step S3 exceeds the predetermined value ETL, it is determined that the X-ray has passed through a different position of the object S to be measured. Then, step S5 is negatively determined, and the process proceeds to step S10, which will be described later. When the sum ET of energy E1 and energy E2 is equal to or less than a predetermined value ETL, X-rays are normally emitted from the X-ray source 2, and energy information based on a single X-ray photon is transmitted from the scattering unit 41 and the absorbing unit 42. It is determined that the output is made, the affirmative determination is made in step S5, and the process proceeds to step S6. In step S6, a single track is detected by the detector 4, and it is determined whether or not the energy E2 is output from a single location (single pixel) of the detector 4. When a single track is detected based on the output of the scattering unit 41 of the detector 4 and the energy E2 is output from a single location of the absorbing unit 42, step S6 is positively determined and the step Proceed to S7. When a plurality of tracks are detected based on the output of the scattering unit 41, or when energy E2 is output from a plurality of locations (plural pixels) of the absorbing unit 42, step S6 is negatively determined and step S10 described later. Proceed to.

In step S7, the specific unit 54 calculates the Compton scattering angle θ based on the above equation (5) using the calculated energy E1 and the energy E2 output from the absorption unit 42, and proceeds to step S8. move on. In step S8, the identification unit 54 determines whether or not X-rays are scattered inside the object to be measured S. Specifically, the specific unit 54 describes the scattering point T1 and the position (XAj, XAj,) on the scattering plane including the initial traveling direction of the rebound electron, the position of the scattering point T1, and the position (XAj, YAj, ZAj). A straight line having a Compton scattering angle θ with respect to a straight line connecting YAj and ZAj) and passing through the scattering point T1 is set as the path L1. The specific unit 54 determines whether or not the X-ray source 2 exists on the course L1 or at a position where the distance from the course L1 is smaller than a predetermined distance. If it is determined that the X-rays are not scattered inside the object S to be measured, the affirmative determination is made in step S8, and the process proceeds to step S9. On the other hand, when it is determined that the X-rays are scattered inside the object S to be measured, step S8 is negatively determined, and the process proceeds to step S10 described later.

In step S9, the specific unit 54 calculates a position (expected incident position) on the absorption unit 42 that is expected to be incident on the assumption that the X-rays incident on the chamber 411 do not cause Compton scattering. In this case, the specific unit 54 calculates the expected incident position based on the Compton scattering angle θ, the position of the scattering point T1, and the course L1. The image generation unit 53 stores the energy E2 from the absorption unit 42 and the above-mentioned expected incident position calculated by the specific unit 54 as internal information, and proceeds to step S10. In step S10, the control device 5 determines whether or not specific processing has been performed for all the events of the detector 4. When the specific processing is performed for all the events, the affirmative determination of step S10 is made and the process proceeds to step S11. In step S11, the image generation unit 53 uses the generated internal information to generate X-ray projection image data of the object S to be measured, and proceeds to step S13 described later.

If there is an event for which the specific process has not been performed in step S10, the negative determination in step S10 is made and the process proceeds to step S12. In step S12, the specific unit 54 acquires the electric signal from the pixel electrode 412 of the scattering unit 41 and the electric signal from the absorbing unit 42 in the next event, returns to step S4, and then performs the same processing.

In step S13, the control device 5 determines whether or not the X-ray projection image data has been generated for all the measurement angles. When the X-ray projection image data is generated for all the measurement angles, the affirmative determination is made in step S13, and the process proceeds to step S14. In step S14, the image reconstruction unit 56 generates three-dimensional data using the plurality of X-ray projection image data and ends the process. The control device 5 can display the three-dimensional data on a monitor (not shown) or store it in a memory (not shown).
If there is a measurement angle in which the X-ray projection image data is not generated in step S13, the negative determination in step S13 is made and the process proceeds to step S15. In step S15, the mounting table control unit 52 drives the manipulator unit 36 to rotate the mounting table 31 to a predetermined measurement angle to return to step S2, and the same process is performed thereafter.

According to the above-described embodiment, the following effects can be obtained.
(1) The scattering unit 41 of the detector 4 is a rebound electron generated by incident and scattered X-rays transmitted through the object S to be measured or X including scattered X-rays scattered inside the object S to be measured. Detects the direction of travel. The specific unit 54 of the control device 5 determines at least the transmitted X-rays and the scattered X-rays based on the traveling direction of the backscattered electrons, the incident position of the X-rays detected by the absorbing unit 42, and the scattering angle θ of the X-rays. Identify one. This makes it possible to select scattered X-rays scattered by the object S to be measured and non-scattered X-rays among the X-rays. When generating X-ray projected image data, scattered X-rays that cause noise can be excluded from the internal information of the object S to be measured, and the image quality of the X-ray projected image data can be improved. ..

(2) The specific unit 54 calculates the energy E1 lost due to Compton scattering of X-rays in the scattering unit 41, the traveling direction of the rebounding electrons, the calculated energy E1, and the energy E2 detected by the absorbing unit 42. At least one of the transmitted X-rays and the scattered X-rays is specified based on. This makes it possible to select scattered X-rays scattered by the object S to be measured and non-scattered X-rays among the X-rays.

(3) The scattering unit 41 detected the scattering point T1 in which X rays were scattered in Compton in the chamber 411, and the specific unit 54 scattered the scattering point T1, the initial traveling direction of the rebound electrons, and Compton in the chamber 411. At least one of the transmitted X-ray and the scattered X-ray is specified based on the relationship satisfied by the Compton scattering angle θ of the X-ray and the incident position of the X-ray incident on the absorbing unit 42. As a result, scattered X-rays can be excluded from the X-rays incident on the detector 4 to generate X-ray projection image data.

(4) In the specific unit 54, the presence of the X-ray source 2 is present based on the scattering point T1, the initial traveling direction of the rebounding electrons, the Compton scattering angle θ, and the incident position of the X-ray on the absorbing unit 42. The estimated position (course L1) is calculated, and if the X-ray source 2 exists at the calculated position, the X-ray is specified as a transmitted X-ray. As a result, scattered X-rays can be excluded from the X-rays incident on the detector 4, which can contribute to improving the image quality of the X-ray projected image data.

_{(5) The specific unit 54 uses X-rays in which the time difference between the time Tj + t sig} at which the energy E1 is output from the scattering unit 41 and the time Tj at which the energy E2 is output from the absorbing unit 42 is within a predetermined range T1. Identify scattered X-rays. As a result, the scattered X-rays can be specified by excluding the X-rays emitted from the X-ray source 2 at different timings and incident on the detector 4, so that the accuracy of identifying the scattered X-rays can be improved.

(6) The identification unit 54 identifies scattered X-rays by irradiating from the X-ray source 2, passing through different positions of the object S to be measured, excluding X-rays incident on the same pixel of the absorption unit 42, and specifying scattered X-rays. To do. As a result, it is possible to suppress that the information at different positions inside the object S to be measured is included in the internal information as the information at the same position, so that the deterioration of the image quality of the X-ray projected image data can be suppressed.

(7) When the sum of the calculated energy E1 and the energy E2 from the absorbing unit 42 exceeds the value based on the energy E0 of the X-rays emitted from the X-ray source 2, the specific unit 54 determines the object S to be measured. It is detected that there are a plurality of X-ray photons incident on the same position of the absorption unit 42 through different positions of the above, and the detected X-ray photons are excluded to specify the scattered X-rays. As a result, X-rays transmitted through different positions of the object to be measured S and incident on the same pixel of the absorption unit 42 can be excluded from the internal information of the object to be measured S.

The X-ray apparatus 100 of the above-described embodiment can be modified as follows.
(1) In the above-described embodiment, the case where the scattering portion 41 of the detector 4 has the chamber 411 in which the gas is sealed has been described as an example, but the description is not limited to this example. For example, the scattering unit 41 may be configured by a known three-dimensional quantum image detector using SOI. FIG. 6A shows the configuration of the detector 4 in this case. As for the scattering unit 41, the three-dimensional quantum image detector using SOI includes a Si sensor unit 500 having a thickness along the Z direction, and the Si sensor unit 500 detects track of rebounding electrons. The Si sensor unit 500 has a silicon layer 501 and an integrated circuit 502 on the Z direction + side of the silicon layer 501. The X-rays from the object S to be measured are transmitted through the silicon layer 501 or scattered by Compton, and the integrated circuit 502 detects the three-dimensional shape of the track of the rebound electron due to the Compton scattering in the same manner as in the embodiment.

Further, the scattering unit 41 and the absorbing unit 42 may have a configuration in which a plurality of three-dimensional quantum image detectors are stacked along the Z direction. 6 (b) and 6 (c) show the configuration of the detector 4 in this case. FIG. 6B is a cross-sectional view in the YZ plane, FIG. 6C is an external view in the XY plane, and the scattering portion 41 is a plurality of three-dimensional quantum image detectors 511a laminated along the Z direction. It has ~ 511d (referred to by reference numeral 511 when generically referred to) and a processing circuit 513 provided on the processing substrate 512. The absorption unit 42 includes a plurality of three-dimensional quantum image detectors 511e to 511h (generally referred to as reference numerals 511) stacked along the Z direction, and a processing circuit 515 provided on the processing substrate 514. .. In the examples shown in FIGS. 6 (b) and 6 (c), the scattering unit 41 and the absorbing unit 42 each have four three-dimensional quantum image detectors 511a to 511d and 511e to 511h, respectively. The number of the three-dimensional quantum image detectors 511 included in the unit 41 and the absorption unit 42 is not limited to the examples shown in FIGS. 6 (b) and 6 (c). Further, the scattering unit 41 and the absorbing unit 42 may have different numbers of three-dimensional quantum image detectors 511.

The three-dimensional quantum image detector 511 includes a substrate 520 and a semiconductor element 521. The semiconductor element 521 is formed in a thin plate shape and is provided on the substrate 520. The semiconductor element 521 has a plurality of strip electrodes on its upper surface (Z direction − side). The strip electrodes are connected by wires 523 to the processing circuits 513 and 515 provided on the processing substrates 512 and 514, respectively. The strip electrode outputs an electric signal when X-rays or rebound electrons are incident. When X-rays are incident on the scattering unit 41 and scattered by Compton to emit rebound electrons, an electric signal is output to the processing circuit 513 from the strip electrode through which the rebound electrons have passed among the three-dimensional quantum image detectors 511a to 511d. .. Since the three-dimensional quantum image detectors 511a to 511d of the scattering unit 41 are stacked in the Z direction, the position of the track of the rebounding electron in the Z direction is detected. By arranging the strip electrodes, the position of the trajectory of the rebounding electron passing through each of the three-dimensional quantum image detectors 511a to 511d in the XY direction is detected. This makes it possible to detect the three-dimensional shape of the track of the rebounding electron. When X-rays are incident, the three-dimensional quantum image detectors 511e to 511h of the absorption unit 42 output an electric signal from the strip electrode to the processing circuit 515, and the position where the X-rays are absorbed is detected.

(2) In the above-described embodiment, the control device 5 has been described as having an image generation unit 53 and an image reconstruction unit 56, but the control device 5 has an image generation unit 53 and an image reconstruction unit 56. You don't have to. The image generation unit 53 and the image reconstruction unit 56 are provided in a processing device or the like separate from the X-ray device 100, and provide information on scattered X-rays or X-rays other than the scattered X-rays specified by the specific unit 54. For example, the X-ray projection image data or the three-dimensional data may be generated by acquiring the data via a network, a storage medium, or the like.

A structure manufacturing system according to an embodiment of the present invention will be described with reference to the drawings. The structure manufacturing system of the present embodiment creates a molded product such as an electronic component including a door portion, an engine portion, a gear portion, and a circuit board of an automobile, for example.

FIG. 7 is a block diagram showing an example of the configuration of the structure manufacturing system 400 according to the present embodiment. The structure manufacturing system 400 includes an X-ray apparatus 100 described in the first embodiment, a design apparatus 410, a molding apparatus 420, a control system 430, and a repair apparatus 440.

The design device 410 is a device used by the user when creating design information regarding the shape of the structure, and performs a design process of creating and storing the design information. The design information is information indicating the coordinates of each position of the structure. The design information is output to the molding apparatus 420 and the control system 430 described later. The molding apparatus 420 performs a molding process of creating and molding a structure using the design information created by the design apparatus 410. In this case, one aspect of the present invention also includes a molding apparatus 420 that performs at least one of laminating processing, casting processing, forging processing, and cutting processing represented by 3D printer technology.

The X-ray apparatus 100 performs a measurement process for measuring the shape of the structure formed by the forming apparatus 420. The X-ray apparatus 100 outputs information (hereinafter, referred to as shape information) indicating the coordinates of the structure, which is the measurement result of measuring the structure, to the control system 430. The control system 430 includes a coordinate storage unit 431 and an inspection unit 432. The coordinate storage unit 431 stores the design information created by the design device 410 described above.

The inspection unit 432 determines whether or not the structure formed by the forming apparatus 420 is formed according to the design information created by the design apparatus 410. In other words, the inspection unit 432 determines whether or not the molded structure is a non-defective product. In this case, the inspection unit 432 reads out the design information stored in the coordinate storage unit 431 and performs an inspection process for comparing the design information with the shape information input from the X-ray apparatus 100. As an inspection process, the inspection unit 432 compares, for example, the coordinates indicated by the design information with the coordinates indicated by the corresponding shape information, and when the coordinates of the design information and the coordinates of the shape information match as a result of the inspection process, Judge that it is a good product molded according to the design information. If the coordinates of the design information and the coordinates of the corresponding shape information do not match, the inspection unit 432 determines whether or not the difference in the coordinates is within the predetermined range, and if it is within the predetermined range, it can be repaired. Judged as a defective product.

When it is determined that the defective product can be repaired, the inspection unit 432 outputs repair information indicating the defective portion and the repair amount to the repair device 440. The defective part is a part having shape information coordinates that do not match the coordinates of the design information, and the repair amount is the difference between the design information coordinates and the shape information coordinates in the defective part. The repair device 440 performs a repair process for reworking a defective portion of the structure based on the input repair information. The repair device 440 repeats the same processing as the molding process performed by the molding device 420 in the repair process.

The process performed by the structure manufacturing system 400 will be described with reference to the flowchart shown in FIG.
In step S31, the design device 410 is used when the user designs the structure, and the design process creates and stores design information regarding the shape of the structure, and proceeds to step S32. It should be noted that the present invention is not limited to the design information created by the design device 410, and if the design information already exists, the one that acquires the design information by inputting the design information is also included in one aspect of the present invention. Is done. In step S32, the molding apparatus 420 creates and forms a structure based on the design information by the molding process, and proceeds to step S33. In step S33, the X-ray apparatus 100 performs measurement processing, measures the shape of the structure, outputs shape information, and proceeds to step S34.

In step S34, the inspection unit 432 performs an inspection process for comparing the design information created by the design device 410 with the shape information measured and output by the X-ray device 100, and proceeds to step S35. In step S35, the inspection unit 432 determines whether or not the structure molded by the molding apparatus 420 is a non-defective product based on the result of the inspection process. When the structure is a non-defective product, that is, when the difference between the coordinates of the design information and the coordinates of the shape information is within a predetermined range, step S35 is affirmatively determined and the process ends. If the structure is not a non-defective product, that is, if the coordinates of the design information and the coordinates of the shape information do not match, or if coordinates that are not in the design information are detected, step S35 is negatively determined and the process proceeds to step S36.

In step S36, the inspection unit 432 determines whether or not the defective portion of the structure can be repaired. If the defective portion is not repairable, that is, if the difference between the coordinates of the design information and the coordinates of the shape information in the defective portion exceeds a predetermined range, step S36 is determined to be negative and the process ends. When the defective portion can be repaired, that is, when the difference between the coordinates of the design information and the coordinates of the shape information in the defective portion is within a predetermined range, step S36 is positively determined and the process proceeds to step S37. In this case, the inspection unit 432 outputs the repair information to the repair device 440. In step S37, the repair device 440 performs repair processing on the structure based on the input repair information, and returns to step S33. As described above, the repair device 440 repeats the same processing as the molding process performed by the molding device 420 in the repair process.

According to the structure manufacturing system according to the above-described embodiment, the following effects can be obtained.
(1) The X-ray apparatus 100 of the structure manufacturing system 400 performs a measurement process for acquiring the shape information of the structure created by the forming apparatus 420 based on the design process of the design apparatus 410, and performs an inspection unit of the control system 430. The 432 performs an inspection process for comparing the shape information acquired in the measurement process with the design information created in the design process. Therefore, it is possible to obtain the inspection of defects in the structure and the information inside the structure by non-destructive inspection, and to judge whether the structure is a non-defective product created according to the design information. Contribute to.

(2) The repair device 440 is configured to perform a repair process in which the molding process is performed again on the structure based on the comparison result of the inspection process. Therefore, when the defective portion of the structure can be repaired, the same treatment as the molding treatment can be applied to the structure again, which contributes to the production of a high-quality structure close to the design information.

The following modifications are also within the scope of the present invention, and one or more of the modifications can be combined with the above-described embodiment.
In the X-ray apparatus 100, the mounting table 31 on which the object to be measured S is placed is oriented in the X-axis, Y-axis, and Z-axis directions by the X-axis moving portion 33, the Y-axis moving portion 34, and the Z-axis moving portion 35. It is not limited to what is moved. The mounting table 31 does not move in the X-axis, Y-axis, and Z-axis directions, but by moving the X-ray source 2 and the detector 4 in the X-axis, Y-axis, and Z-axis directions, X is X with respect to the object S to be measured. The X-ray apparatus 100 may have a configuration in which the radiation source 2 and the detector 4 are relatively moved. Further, instead of the mounting table 31 rotating on the rotation axis Yr, the X-ray apparatus 100 has a configuration in which the mounting table 31 does not rotate and the X-ray source 2 and the detector 4 rotate on the rotation axis Yr. You may have.

The present invention is not limited to the above-described embodiment as long as the features of the present invention are not impaired, and other embodiments considered within the scope of the technical idea of the present invention are also included within the scope of the present invention. ..

2 ... X-ray source, 4 ... Detector, 5 ... Control device,
41 ... Scattering unit, 42 ... Absorbing unit, 53 ... Image generation unit,
54 ... Specific part, 100 ... X-ray device,
400 ... structure manufacturing system, 410 ... measuring device,
420 ... molding equipment, 430 ... control system, 440 ... repair equipment

Claims (15)

A detector that receives incidents of transmitted X-rays that have passed through the object to be measured or X-rays that include scattered X-rays scattered inside the object to be measured, and the path and progress of electrons generated by the scattering of the incident X-rays. A detector that detects at least one of the directions and at least one of the incident and scattered X-ray paths and traveling directions.
A specific portion that identifies at least one of the transmitted X-rays and the scattered X-rays based on at least one of the electron's path and traveling direction and at least one of the X-ray's path and traveling direction.
An X-ray device comprising. In the X-ray apparatus according to claim 1,
The detector receives the incidents of the first detector that causes scattering of the incident X-rays and the X-rays scattered or transmitted by the first detector, and detects the incident position of the incident X-rays. Has a second detector
The specific unit is an X-ray apparatus that identifies at least one of the transmitted X-rays and the scattered X-rays based on the path of the electrons and the incident position of the X-rays. In the X-ray apparatus according to claim 2,
Based on the incident position of the X-rays detected by the second detector, the specific unit calculates at least one of the course and the traveling direction of the X-rays scattered by the first detector. Based on at least one of the X-ray path and the traveling direction and at least one of the electron path and the traveling direction, the surface including the X-ray path incident on the first detector from the object to be measured is calculated. X-ray equipment. In the X-ray apparatus according to claim 2 or 3.
The second detector detects the first energy of the X-rays scattered or transmitted by the first detector and incident.
The specific unit calculates the second energy lost due to the X-rays being scattered by the first detector, and the transmitted X is based on the traveling direction of the electrons, the first energy, and the second energy. An X-ray apparatus that identifies at least one of a line and the scattered X-ray. In the X-ray apparatus according to claim 4,
The specific unit calculates at least one of the scattering angle of the X-rays scattered by the first detector and the emission angle of the electrons based on the first energy and the second energy, and the calculated scattering angle is calculated. And an X-ray apparatus that identifies at least one of the transmitted X-rays and the scattered X-rays based on at least one of the emission angles. In the X-ray apparatus according to claim 4 or 5.
The first detector detects the scattering position where the X-ray is scattered by the first detector.
The specific unit is based on the scattering position, the traveling direction of the electrons, the scattering angle of the X-rays scattered by the first detector, and the incident position of the X-rays incident on the second detector. An X-ray apparatus that identifies at least one of the transmitted X-ray and the scattered X-ray. In the X-ray apparatus according to claim 6,
The specific unit calculates the direction in which the presence of the X-ray source is estimated based on the scattering position, the traveling direction of the electrons, the scattering angle, and the incident position incident on the second detector. An X-ray apparatus that identifies the X-ray as the transmitted X-ray when an X-ray source is present in the calculated direction. In the X-ray apparatus according to any one of claims 4 to 7.
The specific unit is based on the X-rays in which the difference between the time when the X-rays are scattered by the first detector and the time when the first energy is output from the second detector is within a predetermined time difference. An X-ray apparatus that identifies at least one of the transmitted X-ray and the scattered X-ray. In the X-ray apparatus according to claim 8,
The specific portion is irradiated from an X-ray source at intervals shorter than a predetermined time, passes through different positions of the object to be measured, and is incident on the same pixel of the second detector within a predetermined time. An X-ray apparatus that excludes X-rays and identifies at least one of the transmitted X-rays and the scattered X-rays. In the X-ray apparatus according to claim 9,
The specific unit refers to the detected X-rays in which the sum of the first energy and the second energy exceeds a predetermined value set based on the energy of the X-rays emitted from the X-ray source. An X-ray apparatus that excludes and identifies at least one of the transmitted X-ray and the scattered X-ray. In the X-ray apparatus according to claim 9,
The specific unit transmits the time when the X-ray is scattered by the first detector and the time when the electron is detected at another position of the first detector by passing through different positions of the object to be measured. An X-ray apparatus that specifies at least one of the transmitted X-rays and the scattered X-rays by excluding the detected X-rays whose difference from the X-rays is within a predetermined time difference. In the X-ray apparatus according to any one of claims 3 to 11.
X further includes an image generation unit that acquires internal information of the object to be measured based on the transmitted X-rays specified by the specific unit and generates an X-ray projection image based on the internal information of the object to be measured. Wire device. Create design information about the shape of the structure
Create the structure based on the design information
The shape of the created structure is measured by using the X-ray apparatus according to any one of claims 1 to 12, and shape information is acquired.
A method for manufacturing a structure that compares the acquired shape information with the design information. In the method for manufacturing a structure according to claim 13.
A method for manufacturing a structure, which is executed based on a comparison result between the shape information and the design information and reworks the structure. In the method for manufacturing a structure according to claim 14.
The reworking of the structure is a method for manufacturing a structure in which the structure is recreated based on the design information.

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