JP2021019187A - Processed liquid discharge nozzle, nozzle arm, substrate processing device, and substrate processing method - Google Patents

Abstract

To provide a technology that inhibits occurrence of particles.SOLUTION: A processed liquid discharge nozzle according to an embodiment discharges a processed liquid used for substrate processing. The processed liquid discharge nozzle includes a nozzle body part and an angle change mechanism. The nozzle body part has: a first body part formed with a first passage communicating with a processed liquid supply passage; and a second body part which is formed with a second passage communicating with the first passage and bends relative to the first body part. The angle change mechanism changes an angel of the nozzle body part in a horizontal direction relative to a fixing member to which the nozzle body part is fixed.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a processing liquid discharge nozzle, a nozzle arm, a substrate processing apparatus, and a substrate processing method.

Patent Document 1 discloses that a treatment liquid is discharged from a treatment liquid nozzle toward a substrate.

Japanese Unexamined Patent Publication No. 2019-40958

The present disclosure provides a technique for suppressing the generation of particles.

The treatment liquid discharge nozzle according to one aspect of the present disclosure is a treatment liquid discharge nozzle that discharges the treatment liquid used for substrate treatment. The processing liquid discharge nozzle includes a nozzle main body and an angle changing mechanism. The nozzle main body has a first main body having a first flow path communicating with the processing liquid supply path and a second main body communicating with the first flow path, and is bent with respect to the first main body. It has a second main body. The angle changing mechanism changes the angle of the nozzle body in the horizontal direction with respect to the fixing member to which the nozzle body is fixed.

According to the present disclosure, the generation of particles can be suppressed.

FIG. 1 is a schematic view showing the configuration of the substrate processing apparatus according to the first embodiment. FIG. 2 is a perspective view of the processing liquid supply unit according to the first embodiment. FIG. 3 is a plan view of the processing liquid supply unit according to the first embodiment. FIG. 4 is a sectional view taken along line IV-IV of FIG. FIG. 5 is a front view of the processing liquid discharge nozzle according to the first embodiment. FIG. 6 is a plan view of the processing liquid discharge nozzle according to the first embodiment. FIG. 7 is a sectional view taken along line VII-VII of FIG. FIG. 8 is a flowchart illustrating the discharge angle changing process according to the first embodiment. FIG. 9 is a plan view of the processing liquid supply unit according to the second embodiment. FIG. 10 is a plan view of the processing liquid discharge nozzle according to the second embodiment. FIG. 11 is a sectional view taken along line XI-XI of FIG. FIG. 12 is a perspective view of the processing liquid discharge nozzle according to the second embodiment as viewed from diagonally below. FIG. 13 is a cross-sectional view taken along the line XIII-XIII of FIG. FIG. 14 is a plan view of the processing liquid supply unit according to the third embodiment. FIG. 15 is a schematic view illustrating the arrangement of the processing liquid discharge nozzle and the gas discharge nozzle according to the third embodiment. FIG. 16 is a perspective view showing a part of the substrate processing apparatus according to the fourth embodiment. FIG. 17 is a schematic view showing a state in which the processing liquid discharge nozzle is in the standby position in the substrate processing apparatus according to the fourth embodiment. FIG. 18 is a schematic view showing a state in which the processing liquid discharge nozzle is in the discharge position in the substrate processing apparatus according to the fourth embodiment. FIG. 19 is a schematic view showing a state in which the first conductive portion is in the non-contact position in the substrate processing apparatus according to the fifth embodiment. FIG. 20 is a schematic view showing a state in which the first conductive portion is in the contact position in the substrate processing apparatus according to the fifth embodiment. FIG. 21 is a perspective view showing a part of the substrate processing apparatus according to the sixth embodiment. FIG. 22 is a perspective view showing a part of the substrate processing apparatus according to the seventh embodiment. FIG. 23 is a cross-sectional view showing a part of the arm according to the modified example.

Hereinafter, embodiments of the processing liquid discharge nozzle, nozzle arm, substrate processing apparatus, and substrate processing method disclosed in the present application will be described in detail with reference to the accompanying drawings. The processing liquid discharge nozzle, nozzle arm, substrate processing apparatus, and substrate processing method disclosed in the following embodiments are not limited.

In each drawing referred to below, in order to make the explanation easy to understand, there is a case where an orthogonal coordinate system is shown in which the X-axis direction, the Y-axis direction and the Z-axis direction which are orthogonal to each other are defined and the Z-axis positive direction is the vertically upward direction. is there. The X-axis direction and the Y-axis direction are horizontal directions. Hereinafter, the description may be made with the Z-axis positive direction as the upper side and the Z-axis negative direction as the lower side.

(First Embodiment)
<Overall configuration of board processing equipment>
The configuration of the substrate processing apparatus 1 according to the first embodiment will be described with reference to FIG. FIG. 1 is a schematic view showing the configuration of the substrate processing apparatus 1 according to the first embodiment.

The substrate processing device 1 includes a processing container 2, a holding unit 3, an outer cup 4, an arm 5, and a control device 6. The processing container 2 houses the holding portion 3, the outer cup 4, and the arm 5. The processing container 2 houses the processing liquid discharge nozzle 21 of the arm 5, which will be described later, and the moving mechanism 11.

The holding portion 3 holds the mounted circular substrate W. The holding unit 3 holds the substrate W when the substrate processing is performed. For example, the holding portion 3 attracts and holds the lower surface side of the substrate W by the vacuum chuck. Further, the holding portion 3 (an example of the substrate rotating portion) rotates the mounted substrate W. Specifically, the holding unit 3 rotates about an axis along the Z-axis direction to rotate the held substrate W.

Further, the holding portion 3 moves up and down in the Z-axis direction. The holding unit 3 moves up and down while holding the substrate W, for example. The holding unit 3 raises and lowers the substrate W between the delivery position and the processing position. The delivery position is a position set above the outer cup 4, and is a position where the substrate W is delivered between the holding unit 3 and the substrate transfer device (not shown). The processing position is lower than the delivery position, is a position set in the outer cup 4, and is a position where the substrate processing is performed on the substrate W.

The outer cup 4 (an example of the cup portion) is provided so as to surround the holding portion 3 and the outer side of the substrate W held by the holding portion 3. The outer cup 4 is provided in an annular shape.

The outer cup 4 receives the processing liquid scattered from the substrate W. The outer cup 4 is made of a material having high chemical resistance. A drainage port (not shown) is provided at the bottom of the outer cup 4. The processing liquid received by the outer cup 4 is discharged to the outside of the processing container 2 from the drain port.

The treatment solution is, for example, a chemical solution or a rinse solution. The chemical solution is, for example, hydrofluoric acid (HF), dilute hydrofluoric acid (DHF), hydrofluoric acid and the like. The fluoride nitric acid is a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO ₃ ). The rinsing solution is, for example, DIW (deionized water).

A pair of arms 5 are arranged so as to be arranged along the X-axis direction. Specifically, the arms 5 are arranged on both sides of the substrate W in the X-axis direction. In the following, of the pair of arms 5, the arm 5 on the negative direction side of the X axis may be referred to as the left arm 5L, and the arm 5 on the positive direction side of the X axis may be referred to as the right arm 5R. The arm 5 includes an arm unit 10, a moving mechanism 11, and a processing liquid supply unit 12. In addition, one arm 5 may be arranged.

The arm portion 10 extends from the base end along the Z-axis direction and extends horizontally from the upper end. The arm portion 10 is provided in an L shape.

The moving mechanism 11 (an example of a rotating mechanism) rotates the arm portion 10. Specifically, the moving mechanism 11 rotates the arm portion 10 around the axis of the arm portion 10 extending in the Z-axis direction. Further, the moving mechanism 11 moves the arm portion 10 along the X-axis direction and the Z-axis direction. A plurality of moving mechanisms 11 may be provided. For example, as the moving mechanism 11, a moving mechanism that rotates the arm portion 10 about an axis in the Z-axis direction, a moving mechanism that moves the arm portion 10 along the X-axis direction, and an arm portion 10 along the Z-axis direction. A moving mechanism is provided to move the car.

The treatment liquid supply unit 12 supplies the treatment liquid to the upper surface of the substrate W. The processing liquid supply unit 12 discharges the processing liquid to the peripheral edge of the upper surface of the substrate W, and performs an etching process on the peripheral edge of the substrate W. The treatment liquid supply unit 12 is provided at the tip of the arm unit 10. Details of the treatment liquid supply unit 12 will be described later.

The peripheral edge is a region from the end face of the circular substrate W, for example, having a width of about 1 to 5 mm and including the inside in the radial direction of the substrate W. The periphery is an annular region.

The substrate processing device 1 includes a bottom surface supply unit (not shown) that supplies a treatment liquid to the peripheral edge of the lower surface of the substrate W, a heating mechanism (not shown) that supplies a heated fluid toward the lower surface of the substrate W, and the like. May be provided.

The control device 6 is, for example, a computer, and includes a storage unit 6a and a control unit 6b.

The storage unit 6a stores, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk, and stores a program that controls various processes executed in the substrate processing device 1. To do.

The control unit 6b includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits. The control unit 6b controls the operation of the substrate processing device 1 by reading and executing the program stored in the storage unit 6a.

The program may be one recorded on a storage medium readable by a computer, and may be installed from the storage medium in the storage unit 6a of the control device 6. Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

<Treatment liquid supply unit>
Next, the processing liquid supply unit 12 will be described with reference to FIGS. 2 and 3. FIG. 2 is a perspective view of the processing liquid supply unit 12 according to the first embodiment. FIG. 3 is a plan view of the processing liquid supply unit 12 according to the first embodiment. The processing liquid supply unit 12 of FIGS. 2 and 3 is a processing liquid supply unit 12 provided on the right arm 5R.

The processing liquid supply unit 12 includes a nozzle block 20 and a processing liquid discharge nozzle 21. The nozzle block 20 is attached to the tip of the arm portion 10. That is, a nozzle block 20 (an example of a fixing member) is attached to the arm portion 10. A treatment liquid supply pipe 5a provided on the arm 5 is connected to the nozzle block 20. As shown in FIG. 4, a treatment liquid supply path 20a is formed in the nozzle block 20. The treatment liquid supplied from the treatment liquid supply pipe 5a flows through the treatment liquid supply path 20a. FIG. 4 is a sectional view taken along line IV-IV of FIG.

The nozzle block 20 is formed with a first recess 20b, a second recess 20c, and a third recess 20d. The first recess 20b is formed so as to be recessed downward from the upper surface of the nozzle block 20. A through hole 20e is formed at the bottom of the first recess 20b. A bolt 22 for fixing the processing liquid discharge nozzle 21 to the nozzle block 20 is inserted into the through hole 20e.

As shown in FIG. 3, a plurality of through holes 20e are provided for one processing liquid discharge nozzle 21. For example, two through holes 20e are provided for one processing liquid discharge nozzle 21. The number of through holes 20e for one processing liquid discharge nozzle 21 is not limited to two. For example, the number of through holes 20e for one processing liquid discharge nozzle 21 may be 3 or more.

As shown in FIG. 4, the second recess 20c is formed so as to be recessed upward from the lower surface of the nozzle block 20. The second recess 20c is formed around the through hole 20e. The second recess 20c communicates with the first recess 20b through the through hole 20e. The attachment portion 32a of the processing liquid discharge nozzle 21, which will be described later, is inserted into the second recess 20c.

The second recess 20c and the through hole 20e are provided so that the angle of the processing liquid discharge nozzle 21 in the horizontal direction can be changed with respect to the nozzle block 20. Specifically, a plurality of second recesses 20c are provided so that the mounting portion 32a of the treatment liquid discharge nozzle 21 can be inserted according to the mounting position of the treatment liquid discharge nozzle 21. For example, two second recesses 20c are provided for one processing liquid discharge nozzle 21. A part of the two second recesses 20c may be provided so as to overlap each other. That is, the two second recesses 20c may be provided so as to communicate with each other.

Further, the through hole 20e is provided so that the angle of the processing liquid discharge nozzle 21 can be changed. Specifically, the two through holes 20e corresponding to one processing liquid discharge nozzle 21 have their central axes arranged on the same radius centered on the central axis of the introduction portion 35b of the processing liquid discharge nozzle 21, which will be described later. ,It is formed.

The third recess 20d is formed so as to be recessed upward from the lower surface of the nozzle block 20. The introduction portion 35b of the processing liquid discharge nozzle 21, which will be described later, is inserted into the third recess 20d. The inner wall surface of the third recess 20d is formed in a circular shape.

The processing liquid discharge nozzle 21 moves between the standby position and the discharge position as the arm portion 10 moves by the moving mechanism 11. The standby position is a position where a part of the processing liquid discharge nozzle 21 is housed in the notch 4a formed in the outer cup 4. The standby position is a position where the substrate W can be raised and lowered between the transfer position and the processing position by the holding unit 3. When the processing liquid discharge nozzle 21 is in the standby position, the substrate W and the processing liquid discharge nozzle 21 do not come into contact with each other due to the raising and lowering of the substrate W.

The discharge position is a position inside the standby position in the radial direction of the substrate W. The discharge position is a position where the treatment liquid is discharged to the peripheral edge of the substrate W by the treatment liquid discharge nozzle 21.

Next, the processing liquid discharge nozzle 21 will be described with reference to FIGS. 5 to 7. FIG. 5 is a front view of the processing liquid discharge nozzle 21 according to the first embodiment. FIG. 6 is a plan view of the processing liquid discharge nozzle 21 according to the first embodiment. FIG. 7 is a sectional view taken along line VII-VII of FIG.

The processing liquid discharge nozzle 21 discharges the processing liquid used for substrate processing. The processing liquid discharge nozzle 21 includes a nozzle main body portion 30, a nozzle discharge portion 31, and a connection portion 32.

The nozzle main body 30 has a first main body 35 and a second main body 36. The first main body portion 35 extends in the Z-axis direction. As shown in FIG. 7, a first flow path 35a is formed in the first main body 35. The first flow path 35a is formed along the Z-axis direction. The first flow path 35a communicates with the treatment liquid supply path 20a (see FIG. 4) of the nozzle block 20. That is, a first flow path 35a communicating with the treatment liquid supply path 20a is formed in the first main body 35. The upper first main body 35 is provided with an introduction portion 35b to be inserted into the third recess 20d (see FIG. 4) of the nozzle block 20. The outer wall surface of the introduction portion 35b is formed in a circular shape.

An O-ring 38 (see FIG. 4) is provided between the introduction portion 35b and the third recess 20d of the nozzle block 20. The O-ring 38 prevents the treatment liquid from leaking from between the first main body 35 and the nozzle block 20.

The second main body 36 is provided so as to be bent with respect to the first main body 35, and extends obliquely downward from the lower end of the first main body 35. Specifically, the second main body 36 extends diagonally downward in accordance with the rotation direction of the substrate W.

In the processing liquid discharge nozzle 21 provided on the left arm 5L and the processing liquid discharge nozzle 21 provided on the right arm 5R, each of the second main body 36 is in the rotation direction of the substrate W from the lower end of the first main body 35. Together, they extend diagonally downward. Therefore, in the processing liquid discharge nozzle 21 provided on the left arm 5L and the processing liquid discharge nozzle 21 provided on the right arm 5R, the direction in which the second main body portion 36 extends is, for example, the opposite direction in the Y-axis direction.

As shown in FIG. 7, a second flow path 36a is formed in the second main body 36. The second flow path 36a extends obliquely downward from the lower end of the first flow path 35a. The second flow path 36a communicates with the first flow path 35a. In this way, the second main body 36 has a second flow path 36a that communicates with the first flow path 35a and bends with respect to the first main body 35.

In addition, a recess 36b is formed in the second main body 36. The recess 36b is formed so as to be recessed from the lower end of the second main body 36 toward the first main body 35. The nozzle discharge portion 31 is inserted into the recess 36b. A screw groove is formed on a part of the inner wall surface of the recess 36b.

The nozzle discharge unit 31 discharges the processing liquid toward the peripheral edge of the substrate W. The nozzle discharge portion 31 extends along the direction in which the second main body portion 36 extends. That is, the nozzle discharge portion 31 extends obliquely downward along the second main body portion 36.

The nozzle discharge portion 31 is inserted into the recess 36b of the second main body portion 36 and attached to the nozzle main body portion 30. The nozzle discharge portion 31 is removable from the tip of the second main body portion 36.

Of the nozzle discharge portion 31, a screw thread is formed in the insertion portion 31a inserted into the recess 36b of the second main body portion 36. The threads are formed according to the thread grooves formed on the inner wall surface of the recess 36b. The nozzle discharge portion 31 is screwed into the nozzle body portion 30.

An O-ring 39 is provided between the insertion portion 31a of the nozzle discharge portion 31 and the second main body portion 36. The O-ring 39 prevents the treatment liquid from leaking between the nozzle discharge portion 31 and the second main body portion 36.

A discharge flow path 31b communicating with the second flow path 36a is formed in the nozzle discharge section 31. The diameter of the discharge flow path 31b is smaller than the diameter of the second flow path 36a. Specifically, the diameter of the inner wall surface 31c of the discharge flow path 31b is smaller than the diameter of the inner wall surface 36c of the second flow path 36a. The diameter of the inner wall surface 31c of the discharge flow path 31b is smaller than the diameter of the inner wall surface 35c of the first flow path 35a.

Further, at the tip of the nozzle discharge unit 31, a discharge port 31d that communicates with the discharge flow path 31b and discharges the processing liquid toward the substrate W is formed. The diameter of the discharge port 31d is smaller than the diameter of the discharge flow path 31b. Specifically, the diameter of the inner wall surface 31e of the discharge port 31d is smaller than the diameter of the inner wall surface 31c of the discharge flow path 31b.

The diameter of the discharge flow path 31b and the diameter of the discharge port 31d are set according to the type of processing, the type of processing liquid to be discharged, and the like. That is, in the processing liquid discharge nozzle 21, the nozzle discharge unit 31 attached to the nozzle main body 30 can be replaced according to the type of processing, the type of the processing liquid to be discharged, and the like.

In this way, the nozzle discharge portion 31 is formed with a discharge flow path 31b communicating with the second flow path 36a, and the treatment liquid is discharged to the peripheral edge of the substrate W. That is, the processing liquid discharge nozzle 21 discharges the processing liquid toward the peripheral edge of the substrate W.

As shown in FIGS. 5 and 6, the connecting portion 32 extends in the horizontal direction with respect to the first main body portion 35. The connecting portion 32 is provided integrally with the first main body portion 35. The connecting portion 32 is provided with a mounting portion 32a that projects upward. As shown in FIG. 6, a bolt hole 32b into which a bolt 22 (see FIG. 4) is inserted is formed in the mounting portion 32a. A screw groove corresponding to the thread of the bolt 22 is formed on the inner wall surface of the bolt hole 32b. A bolt 22 is screwed into the connecting portion 32. By screwing the bolt 22, the nozzle body 30 is fixed to the nozzle block 20.

<Change of processing liquid discharge angle by processing liquid discharge nozzle>
In the treatment liquid discharge nozzle 21, the treatment liquid discharge nozzle 21 is rotated in the horizontal direction with respect to the nozzle block 20 by rotating the introduction portion 35b inserted into the third recess 20d of the nozzle block 20. Can be done. Then, the processing liquid discharge nozzle 21 can change the mounting position with respect to the nozzle block 20 by changing the position of the second recess 20c into which the mounting portion 32a of the connecting portion 32 is inserted. That is, the connection portion 32 (an example of the angle changing mechanism) can change the attachment position with respect to the nozzle block 20 (an example of the fixing member). In other words, the connecting portion 32 changes the angle of the nozzle main body 30 in the horizontal direction with respect to the nozzle block 20 (an example of the fixing member) to which the nozzle main body 30 is fixed.

By changing the mounting position of the nozzle body 30 with respect to the nozzle block 20, the discharge angle of the processing liquid with respect to the nozzle block 20 can be changed. That is, the processing liquid discharge nozzle 21 can change the discharge angle of the processing liquid with respect to the substrate W. The discharge angle is a horizontal angle with respect to the tangent line of the substrate W at a position where the processing liquid discharged by the processing liquid discharge nozzle 21 hits the substrate W.

<Change of rotation angle by arm>
In the arm 5, the moving mechanism 11 can rotate the arm portion 10 about an axis in the Z-axis direction. That is, the moving mechanism 11 (an example of the rotating mechanism) can rotate the arm portion 10 in the horizontal direction. Therefore, for example, the discharge angle of the processing liquid with respect to the substrate W can be changed by rotating the arm portion 10 during the discharge of the processing liquid to the substrate W, that is, during the substrate processing to change the rotation angle. .. The substrate processing may be performed without rotating the arm portion 10 during the substrate processing.

Here, the process of changing the discharge angle of the processing liquid by the arm 5 will be described with reference to FIG. FIG. 8 is a flowchart illustrating the discharge angle changing process according to the first embodiment. The discharge angle changing process is executed by the control unit 6b of the control device 6 controlling the processing liquid discharge nozzle 21 and the holding unit 3.

The control unit 6b sets the initial angle of the arm unit 10 according to the processing with respect to the substrate W (S100). That is, the control unit 6b sets the rotation angle in the moving mechanism 11 (an example of the rotating mechanism) according to the substrate processing.

The control unit 6b rotates the arm unit 10 according to the set initial angle (S101), and starts discharging the processing liquid from the processing liquid discharge nozzle 21 according to the initial angle (S102). That is, the control unit 6b discharges the processing liquid toward the substrate W according to the set rotation angle.

The control unit 6b determines whether or not the angle change timing has come (S103). For example, the control unit 6b determines whether or not a given first time has elapsed since the discharge of the processing liquid was started. The given first time is a preset time.

When it is not the angle change timing (S103: No), the control unit 6b continues to discharge the processing liquid at the initial angle (S102).

When the angle change timing comes (S103: Yes), the control unit 6b sets the angle of the arm unit 10 to a given change angle (S104). The given change angle is a preset angle. The control unit 6b rotates the arm unit 10 according to a set given change angle (S105). That is, the control unit 6b changes the rotation angle during the substrate processing.

The control unit 6b determines whether or not the processing end timing has come (S106). For example, the control unit 6b determines whether or not a given second time has elapsed after changing the angle of the arm unit 10 to a given change angle. The given second time is a preset time.

If it is not the processing end timing (S106: No), the control unit 6b continues the processing with the given change angle (S105). When the processing end timing is reached (S106: Yes), the control unit 6b ends the discharge of the processing liquid (S107).

<Effect>
The processing liquid discharge nozzle 21 includes a nozzle body portion 30 and a connecting portion 32 (an example of an angle changing mechanism). The nozzle main body 30 has a first main body 35 and a second main body 36. A first flow path 35a communicating with the treatment liquid supply path 20a is formed in the first main body 35. A second flow path 36a is formed in the second main body 36 and bends with respect to the first main body. The connecting portion 32 changes the angle of the nozzle main body 30 in the horizontal direction with respect to the nozzle block 20 (an example of the fixing member) to which the nozzle main body 30 is fixed. Specifically, the connection portion 32 can change the attachment position with respect to the nozzle block 20.

As a result, the processing liquid discharge nozzle 21 can change the discharge angle of the processing liquid according to the processing on the substrate W, for example, the type of the film on the substrate W and the type of the processing liquid discharged by the substrate W. Therefore, the processing liquid discharge nozzle 21 can suppress, for example, the processing liquid for etching the peripheral edge of the substrate W from hitting the substrate W and scattering. Therefore, it is possible to suppress the adhesion of the scattered treatment liquid to the portion where the etching is not performed, and it is possible to suppress the generation of particles.

Further, the processing liquid discharge nozzle 21 includes a nozzle discharge unit 31. The nozzle discharge unit 31 is formed with a discharge flow path 31b communicating with the second flow path 36a, and discharges the processing liquid to the substrate W. Further, the nozzle discharge portion 31 is removable from the tip of the second main body portion 36.

As a result, the treatment liquid discharge nozzle 21 can replace the nozzle discharge portion 31 according to the treatment for the substrate W. Therefore, the processing liquid discharge nozzle 21 can accurately etch the peripheral edge of the substrate W, for example. Further, for example, when the discharge port 31d of the nozzle discharge unit 31 is clogged with the processing liquid, the substrate processing can be easily restored by replacing the nozzle discharge unit 31.

Further, the treatment liquid discharge nozzle 21 can reduce the bubbles generated when the treatment liquid flows from the first flow path 35a to the second flow path 36a while the treatment liquid flows through the discharge flow path 31b. Therefore, the treatment liquid discharge nozzle 21 can suppress the inclusion of air bubbles in the treatment liquid discharged to the substrate W, and can stabilize the discharge state of the treatment liquid.

Further, the diameter of the discharge flow path 31b is smaller than the diameter of the second flow path 36a.

As a result, the processing liquid discharge nozzle 21 can suppress the generation of bubbles when the processing liquid flows from the second flow path 36a into the discharge flow path 31b. Therefore, the treatment liquid discharge nozzle 21 can suppress the inclusion of air bubbles in the treatment liquid discharged to the substrate W, and can stabilize the discharge state of the treatment liquid.

Further, the arm 5 (an example of a nozzle arm) includes a processing liquid discharge nozzle 21, a nozzle block 20 (an example of a fixing member), an arm portion 10, and a moving mechanism 11 (an example of a rotating mechanism). A fixing member is attached to the arm portion 10. The moving mechanism 11 rotates the arm portion 10 in the horizontal direction. The substrate processing device 1 sets a rotation angle in the moving mechanism 11 according to the substrate processing, and discharges the processing liquid to the substrate W at the set rotation angle.

As a result, the substrate processing apparatus 1 can discharge the processing liquid at a discharge angle according to the substrate processing, and can accurately etch the peripheral edge of the substrate W.

Further, the substrate processing apparatus 1 changes the rotation angle during substrate processing.

As a result, the substrate processing apparatus 1 can uniformly discharge the processing liquid to the peripheral edge of the substrate W, and can accurately etch the peripheral edge of the substrate W.

(Second Embodiment)
Next, the substrate processing apparatus 1 according to the second embodiment will be described. The substrate processing apparatus 1 according to the second embodiment has a different processing liquid supply unit 50 from the substrate processing apparatus 1 according to the first embodiment. Therefore, here, the processing liquid supply unit 50 according to the second embodiment will be described. The same parts as those of the treatment liquid supply unit 12 according to the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

<Treatment liquid supply unit>
As shown in FIG. 9, the nozzle block 51 of the treatment liquid supply unit 50 is provided with one through hole 20e for one treatment liquid discharge nozzle 52. FIG. 9 is a plan view of the processing liquid supply unit 50 according to the second embodiment. The treatment liquid supply unit 50 in FIG. 9 is a treatment liquid supply unit 50 provided on the right arm 5R.

As shown in FIGS. 10 and 11, the treatment liquid discharge nozzle 52 is provided with a nozzle main body portion 53 and a connecting portion 54 as separate bodies. FIG. 10 is a plan view of the processing liquid discharge nozzle 52 according to the second embodiment. FIG. 11 is a cross-sectional view of XI-XI of FIG.

As shown in FIG. 11, an engaging groove 55a is formed in the first main body portion 55. The engagement groove 55a is formed below the introduction portion 35b. The engaging groove 55a is formed over the entire circumference of the first main body portion 55. By forming the engaging groove 55a, the engaging portion 55b is formed in the first main body portion 55 between the introduction portion 35b and the engaging groove 55a. The diameter of the outer wall surface of the engaging portion 55b is larger than the diameter of the outer wall surface of the introducing portion 35b.

The connecting portion 54 has a pair of arm portions 54a. The pair of arm portions 54a are inserted into the engaging groove 55a to sandwich the first main body portion 55. The first main body portion 55 can rotate in the horizontal direction while being sandwiched between the pair of arm portions 54a. That is, the connecting portion 54 (an example of the angle changing mechanism) rotatably supports the first main body portion 55. Further, the upper surface of the arm portion 54a comes into contact with the engaging portion 55b of the first main body portion 55. That is, the pair of arm portions 54a engage with the engaging portion 55b.

Further, as shown in FIG. 12, the first main body portion 55 and the connecting portion 54 are provided with an alignment portion 60. FIG. 12 is a perspective view of the processing liquid discharge nozzle 52 according to the second embodiment as viewed from diagonally below. The alignment portion 60 includes a first alignment groove 60a and a second alignment groove 60b.

The first alignment groove 60a is formed in the first main body portion 55. The first alignment groove 60a is formed in the first main body portion 55 below the engaging groove 55a (see FIG. 11). A plurality of first alignment grooves 60a are formed on the outer wall surface of the first main body portion 55. Specifically, a plurality of first alignment grooves 60a are formed along the circumferential direction of the first main body portion 55.

The second alignment groove 60b is formed in the connecting portion 54. For example, the second alignment groove 60b may be formed so as to penetrate the connecting portion 54 in the Z-axis direction.

When the connecting portion 54 is fixed to the nozzle block 51 by the bolt 22, the nozzle main body 53 has an arm of the connecting portion 54 when the engaging portion 55b of the first main body 55 is in the Z-axis direction, as shown in FIG. It is sandwiched between the portion 54a and the nozzle block 51. As a result, the nozzle body 53 is fixed to the nozzle block 51. FIG. 13 is a cross-sectional view taken along the line XIII-XIII of FIG.

<Changing the processing liquid discharge angle with the processing liquid discharge nozzle>
The nozzle main body 53 can rotate the first main body 55 in the horizontal direction with respect to the connecting portion 54 when the nozzle main body 53 is not fixed to the nozzle block 51 by the bolt 22. For example, in the treatment liquid discharge nozzle 52, the treatment liquid with respect to the nozzle block 51 is changed by changing the position where the first alignment groove 60a of the first main body portion 55 and the second alignment groove 60b of the connection portion 54 meet. The discharge angle of can be changed. That is, the nozzle body 53 and the connection 54 include an alignment unit 60 that changes the angle of the nozzle body 53 in the horizontal direction with respect to the nozzle block 51 (an example of a fixing member).

<Effect>
In the processing liquid discharge nozzle 52, the connecting portion 54 (an example of the angle changing mechanism) rotatably supports the first main body portion 55.

As a result, the processing liquid discharge nozzle 52 can change the discharge angle of the processing liquid according to the processing on the substrate W, for example, the type of the film on the substrate W and the type of the processing liquid discharged by the substrate W. Therefore, the generation of particles can be suppressed.

Further, the first main body portion 55 and the connecting portion 54 include an alignment portion 60. The alignment portion 60 changes the angle of the nozzle body portion 53 in the horizontal direction with respect to the nozzle block 51 (an example of a fixing member).

As a result, the operator can easily adjust the angle of the first main body portion 55 in the horizontal direction with respect to the connection portion 54 fixed to the nozzle block 51 based on the alignment portion 60. Therefore, the operator can easily set the discharge angle of the processing liquid.

<Modified example of the second embodiment>
The processing liquid discharge nozzle 52 according to the modified example is provided with an alignment groove in one of the first main body portion 55 and the connection portion 54 as the alignment portion 60, and is provided in the other of the first main body portion 55 and the connection portion 54. , A protruding piece to be inserted into the alignment groove may be provided.

As a result, the processing liquid discharge nozzle 52 according to the modified example can suppress the rotation of the first main body portion 55 with respect to the connection portion 54. Therefore, the processing liquid discharge nozzle 52 according to the modified example can suppress the discharge angle of the processing liquid from deviating from the set discharge angle.

(Third Embodiment)
Next, the substrate processing apparatus 1 according to the third embodiment will be described. The substrate processing apparatus 1 according to the third embodiment is different from the substrate processing apparatus 1 according to the second embodiment in the processing liquid supply unit 70. Therefore, here, the processing liquid supply unit 70 according to the third embodiment will be described. The same parts as the treatment liquid supply unit 12 according to the first embodiment and the treatment liquid supply unit 50 according to the second embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

<Treatment liquid supply unit>
As shown in FIG. 14, the processing liquid supply unit 70 further includes a gas discharge nozzle 71. FIG. 14 is a plan view of the processing liquid supply unit 70 according to the third embodiment. The treatment liquid supply unit 70 in FIG. 14 is a treatment liquid supply unit 70 provided on the left arm 5L.

The gas discharge nozzle 71 is attached to the nozzle block 51. The gas discharge nozzle 71 is arranged inside the processing liquid discharge nozzle 52. Specifically, the gas discharge nozzle 71 is arranged inside the processing liquid discharge nozzle 52 in the radial direction of the substrate W.

The gas discharge nozzle 71 discharges gas, for example, nitrogen gas toward the outside. The gas discharge nozzle 71 discharges a gas that hits the substrate W and discharges the processing liquid scattered above the substrate W to the outside of the substrate W.

The gas discharge nozzle 71 discharges gas at a discharge angle larger than the discharge angle of the processing liquid in the horizontal direction. Specifically, as shown in FIG. 15, the gas discharge nozzle 71 relates to the treatment liquid discharge angle A1 with respect to the tangent line S of the substrate W at the position T where the treatment liquid discharged by the treatment liquid discharge nozzle 52 hits the substrate W. , Gas is discharged at a discharge angle A2 larger than the discharge angle A1. That is, the gas discharge nozzle 71 discharges gas at a discharge angle A2 larger than the discharge angle A1 of the processing liquid with respect to the tangent to the substrate in the horizontal direction. FIG. 15 is a schematic view illustrating the arrangement of the processing liquid discharge nozzle 52 and the gas discharge nozzle 71 according to the third embodiment.

Further, the gas discharge nozzle 71 discharges gas upward from the substrate W. Specifically, the gas discharge nozzle 71 discharges gas toward the upper side of the position where the treatment liquid discharged by the treatment liquid discharge nozzle 52 hits the substrate W. The gas discharge nozzle 71 may discharge the gas slightly downstream of the position where the treatment liquid discharged by the treatment liquid discharge nozzle 52 hits the substrate W in the rotation direction of the substrate W.

<Effect>
The processing liquid supply unit 70, that is, the arm 5 includes a gas discharge nozzle 71. The gas discharge nozzle 71 discharges a gas that hits the substrate W and discharges the processing liquid scattered above the substrate W to the outside of the substrate W.

As a result, the arm 5 can prevent the processing liquid that has hit the substrate W and scattered from adhering to the inside of the substrate W in the radial direction. Therefore, the arm 5 can suppress the scattering of the treatment liquid from adhering to the portion where the etching is not performed, and can suppress the generation of particles.

Further, the gas discharge nozzle 71 is arranged inside the processing liquid discharge nozzle 52.

As a result, the gas discharge nozzle 71 can discharge the processing liquid that has hit the substrate W and scattered toward the outside of the substrate W. Therefore, the arm 5 can suppress the scattering of the treatment liquid from adhering to the portion where the etching is not performed, and can suppress the generation of particles.

Further, the gas discharge nozzle 71 discharges gas at a discharge angle larger than the discharge angle of the processing liquid in the horizontal direction.

As a result, the arm 5 can discharge the processing liquid immediately after hitting the substrate W and scattering toward the outside of the substrate W. Therefore, the arm 5 can suppress the scattering of the treatment liquid from adhering to the portion where the etching is not performed, and can suppress the generation of particles.

Further, the gas discharge nozzle 71 discharges gas upward from the substrate W.

As a result, for example, the arm 5 suppresses the treatment liquid adhering to the peripheral edge of the substrate W from being discharged to the peripheral edge of the substrate W to be discharged to the outside of the substrate W, and promotes the etching process of the peripheral edge of the substrate W. Can be made to.

(Fourth Embodiment)
Next, the substrate processing apparatus 1 according to the fourth embodiment will be described with reference to FIGS. 16 to 18. Here, the parts different from the substrate processing apparatus 1 according to the first embodiment will be mainly described, and the same parts as those of the substrate processing apparatus 1 according to the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted. .. FIG. 16 is a perspective view showing a part of the substrate processing apparatus 1 according to the fourth embodiment. FIG. 17 is a schematic view showing a state in which the processing liquid discharge nozzle 21 is in the standby position in the substrate processing apparatus 1 according to the fourth embodiment. FIG. 18 is a schematic view showing a state in which the processing liquid discharge nozzle 21 is in the discharge position in the substrate processing device 1 according to the fourth embodiment. Here, the right arm 5R side will be described as an example, but the left arm 5L side also has the same configuration.

The substrate processing device 1 further includes a first conductive portion 90 and a second conductive portion 91. The first conductive portion 90 contacts the processing liquid discharge nozzle 21 and conducts with the processing liquid discharge nozzle 21. The first conductive portion 90 is attached to the processing liquid discharge nozzle 21. For example, the first conductive portion 90 is attached to the first main body portion 35 of the processing liquid discharge nozzle 21. The first conductive portion 90 is a conductive member, for example, a carbon-containing resin. The first conductive portion 90 moves together with the processing liquid discharge nozzle 21. The processing liquid discharge nozzle 21 and the first conductive portion 90 move along the X direction (see FIG. 1) by the moving mechanism 11 (see FIG. 1).

A hole through which the first main body 35 can slide is formed in the first conductive portion 90. That is, the substrate processing device 1 can rotate the processing liquid discharge nozzle 21 with respect to the nozzle block 20 in a state where the processing liquid discharge nozzle 21 is in contact with the first main body 35, and the processing with respect to the nozzle block 20 The liquid discharge angle can be changed. The first conductive portion 90 forms a hole by combining two or more members. That is, the first conductive portion 90 is configured by combining two or more members. The first conductive portion 90 may be composed of one member. For example, the first conductive portion 90 may be formed with a notch communicating with the hole, and the first main body portion 35 may be inserted into the hole through the notch.

By contacting the first conductive portion 90, the second conductive portion 91 conducts with the processing liquid discharge nozzle 21 and eliminates static electricity from the treatment liquid discharge nozzle 21. The second conductive portion 91 is a conductive member, for example, a carbon-containing film. The second conductive portion 91 is provided in the outer cup 4 (an example of the cup portion). The second conductive portion 91 includes a main body portion 91a and a deformed portion 91b.

The main body 91a is provided along the upper surface of the outer cup 4. The main body 91a is provided so that one end thereof is adjacent to the notch 4a of the outer cup 4. Further, the other end of the main body 91a is connected to an external conductive member (for example, a metal member) of the processing container 2 (see FIG. 1). The main body 91a may be connected to an external conductive member of the processing container 2 via an intermediate member. The intermediate member is a conductive member.

The deformed portion 91b is connected to the main body portion 91a. The deformed portion 91b is provided so as to extend obliquely upward from one end of the main body portion 91a toward the notch portion 4a. The deformed portion 91b is provided so as to project inward from the main body portion 91a in the radial direction of the substrate W. That is, the deformed portion 91b is supported by the main body portion 91a in a cantilevered state. The deformed portion 91b is in contact with the first conductive portion 90. The deformed portion 91b elastically deforms with respect to the main body portion 91a. The deformed portion 91b is not limited to a shape supported by the main body portion 91a in a cantilevered state, and may be elastically deformed with respect to the main body portion 91a.

The deformed portion 91b comes into contact with the first conductive portion 90 when the first conductive portion 90 is in the contact position. The deformed portion 91b does not contact the first conductive portion 90 when the first conductive portion 90 is in the non-contact position.

The contact position includes, for example, a standby position. The deformed portion 91b comes into contact with the first conductive portion 90 when the processing liquid discharge nozzle 21 is in the standby position. When the processing liquid discharge nozzle 21 is in the standby position, the first conductive portion 90 and the second conductive portion 91 come into contact with each other to form a conduction path from the treatment liquid discharge nozzle 21 to the external conductive member of the treatment container 2. Will be done. The treatment liquid discharge nozzle 21 is statically eliminated by the conduction between the treatment liquid discharge nozzle 21 and the conductive member outside the treatment container 2.

The non-contact position includes, for example, a discharge position. The deformed portion 91b does not contact the first conductive portion 90 when the processing liquid discharge nozzle 21 is in the discharge position. That is, when the processing liquid discharge nozzle 21 is in the discharge position, the first conductive portion 90 and the second conductive portion 91 do not come into contact with each other, and the treatment liquid discharge nozzle 21 extends to the conductive member outside the processing container 2. No conduction path is formed.

The first conductive portion 90 moves together with the processing liquid discharge nozzle 21 by the moving mechanism 11 (see FIG. 1). That is, the moving mechanism 11 positions the processing liquid discharge nozzle 21 and the first conductive portion 90 at a contact position where the first conductive portion 90 and the second conductive portion 91 come into contact with each other, and the first conductive portion 90 and the second conductive portion 90. The position is switched to a non-contact position where the conductive portion 91 does not contact.

When the processing liquid discharge nozzle 21 moves from the non-contact position (discharge position) to the contact position (standby position), the first conductive portion 90 and the deformed portion 91b of the second conductive portion 91 come into contact with each other. The deformed portion 91b is pressed by the first conductive portion 90, rotates around the main body portion 91a as a fulcrum, and is deformed from a position where it does not come into contact with the first conductive portion 90 (hereinafter, referred to as “initial position”). As a result, the impact when the first conductive portion 90 and the second conductive portion 91 come into contact with each other is suppressed. Further, since the deformed portion 91b is elastically deformed with respect to the main body portion 91a, the contact state between the first conductive portion 90 and the second conductive portion 91 is maintained.

When the processing liquid discharge nozzle 21 moves from the contact position (standby position) to the non-contact position (discharge position), the first conductive portion 90 and the deformed portion 91b of the second conductive portion 91 are separated from each other. Since the deformed portion 91b of the second conductive portion 91 is not pressed by the first conductive portion 90, it rotates with the main body portion 91a as a fulcrum and returns to the initial position.

<Effect>
When the treatment liquid discharge nozzle 21 is charged, the treatment liquid discharged from the treatment liquid discharge nozzle 21 may adhere to the treatment liquid discharge nozzle 21. The treatment liquid adhering to the treatment liquid discharge nozzle 21 may drip onto the substrate W or the like, and particles may be generated. Further, the processing liquid discharged from the processing liquid discharge nozzle 21 may be attracted to the processing liquid discharge nozzle 21 side and dropped on the substrate W or the like to generate particles.

The substrate processing device 1 includes a processing liquid discharge nozzle 21, a first conductive portion 90, a second conductive portion 91, and a moving mechanism 11. The first conductive portion 90 contacts the processing liquid discharge nozzle 21 and conducts with the processing liquid discharge nozzle 21. The second conductive portion 91 conducts with the processing liquid discharge nozzle 21 by coming into contact with the first conductive portion 90, and eliminates static electricity from the treatment liquid discharge nozzle 21. The moving mechanism 11 positions the processing liquid discharge nozzle 21 and the first conductive portion 90 at a contact position where the first conductive portion 90 and the second conductive portion 91 come into contact with each other, and the first conductive portion 90 and the second conductive portion 90. Switch to a non-contact position where the 91 does not come into contact.

As a result, the substrate processing device 1 can suppress the charging of the processing liquid discharge nozzle 21 by bringing the first conductive portion 90 and the second conductive portion 91 into contact with each other at the contact position. Therefore, the substrate processing device 1 can suppress the adhesion of the processing liquid to the processing liquid discharge nozzle 21. Further, the substrate processing device 1 can prevent the processing liquid discharged from the processing liquid discharge nozzle 21 from being attracted to the processing liquid discharge nozzle 21. Therefore, the substrate processing device 1 can suppress the generation of particles.

The second conductive portion 91 includes a deformed portion 91b. The deformed portion 91b is deformed when it comes into contact with the first conductive portion 90.

As a result, the substrate processing device 1 can suppress the impact when the first conductive portion 90 and the second conductive portion 91 come into contact with each other. Therefore, the substrate processing device 1 can suppress the deterioration of the first conductive portion 90 and the second conductive portion 91. Further, the substrate processing device 1 can maintain the first conductive portion 90 and the second conductive portion 91 in a contact state at the contact position by deforming the deformed portion 91b.

The substrate processing device 1 includes a holding portion 3 and an outer cup 4 (an example of a cup portion). The holding unit 3 holds the substrate W when the substrate processing is performed. The outer cup 4 is provided so as to surround the outer side of the substrate W held by the holding portion 3. The second conductive portion 91 is provided in the outer cup 4.

As a result, in the substrate processing device 1, the arrangement of the second conductive portion 91 becomes easy.

<Modified example of the fourth embodiment>
The substrate processing device 1 according to the modified example may include a deformed portion in the first conductive portion 90, and may include a deformed portion in the first conductive portion 90 and the second conductive portion 91. That is, at least one conductive portion of the first conductive portion 90 and the second conductive portion 91 includes a deformed portion that deforms when it comes into contact with the other conductive portion.

As a result, the substrate processing device 1 according to the modified example can suppress the impact when the first conductive portion 90 and the second conductive portion 91 come into contact with each other. Therefore, the substrate processing device 1 according to the modified example can suppress the deterioration of the first conductive portion 90 and the second conductive portion 91. Further, the substrate processing device 1 according to the modified example can maintain the first conductive portion 90 and the second conductive portion 91 in a contact state at the contact position by deforming the deformed portion.

(Fifth Embodiment)
The substrate processing apparatus 1 according to the fifth embodiment will be described with reference to FIGS. 19 and 20. The substrate processing apparatus 1 according to the fifth embodiment is different from the substrate processing apparatus 1 according to the fourth embodiment in the first conductive portion 95 and the second conductive portion 96. Here, the parts different from the substrate processing apparatus 1 according to the fourth embodiment will be mainly described. FIG. 19 is a schematic view showing a state in which the first conductive portion 95 is in the non-contact position in the substrate processing apparatus 1 according to the fifth embodiment. FIG. 20 is a schematic view showing a state in which the first conductive portion 95 is in the contact position in the substrate processing apparatus 1 according to the fifth embodiment.

The first conductive portion 95 includes a main body portion 95a and an arm portion 95b. The main body 95a is attached to the processing liquid discharge nozzle 21 and comes into contact with the processing liquid discharge nozzle 21. For example, the main body 95a comes into contact with the first main body 35 of the processing liquid discharge nozzle 21. A hole through which the first main body 35 can slide is formed in the main body 95a.

The arm portion 95b extends upward from the main body portion 95a. The arm portion 95b is provided so that the upper end of the arm portion 95b is above the upper end of the nozzle block 20 and the upper end of the arm portion 10.

The second conductive portion 96 is provided in the processing container 2. Specifically, at least a part of the second conductive portion 96 is provided on the ceiling of the processing container 2. The second conductive portion 96 includes a main body portion 96a and a deformed portion 96b. One end of the main body 96a is provided near the upper side of the standby position of the processing liquid discharge nozzle 21.

The deformed portion 96b is provided so as to extend obliquely downward from one end of the main body portion 96a. The deformed portion 96b is supported by the main body portion 96a in a cantilevered state. The deformed portion 96b can rotate in the vertical direction with respect to the main body portion 96a.

The deformed portion 96b comes into contact with the first conductive portion 95 when the first conductive portion 95 is in the contact position. The contact position is a position where the processing liquid discharge nozzle 21 has moved upward from the standby position.

The deformed portion 96b does not contact the first conductive portion 95 when the first conductive portion 95 is in the non-contact position. The non-contact position includes, for example, a discharge position and a standby position.

The moving mechanism 11 (see FIG. 1) moves the processing liquid discharge nozzle 21 and the first conductive portion 95 up and down to set the positions of the treatment liquid discharge nozzle 21 and the first conductive portion 95 as a contact position and a non-contact position. Switch to.

When the processing liquid discharge nozzle 21 moves upward from the standby position, the arm portion 95b of the first conductive portion 95 and the deformed portion 96b of the second conductive portion 96 come into contact with each other. The deformed portion 96b is pushed up by the arm portion 95b, rotates upward from the initial position with the main body portion 96a side as a fulcrum, and deforms.

When the processing liquid discharge nozzle 21 moves downward from the contact position, the arm portion 95b of the first conductive portion 95 is separated from the deformed portion 96b of the second conductive portion 96. The deformed portion 96b of the second conductive portion 96 rotates downward with the main body portion 96a side as a fulcrum and returns to the initial position.

<Effect>
The substrate processing device 1 includes a processing container 2. The processing container 2 houses the processing liquid discharge nozzle 21 and the moving mechanism 11. The second conductive portion 96 is provided in the processing container 2. The moving mechanism 11 moves the processing liquid discharge nozzle 21 and the first conductive portion 95 up and down to switch the positions of the treatment liquid discharge nozzle 21 and the first conductive portion 95 between a contact position and a non-contact position.

As a result, in the substrate processing apparatus 1, the connection between the second conductive portion 96 provided in the processing container 2 and the external conductive member of the processing container 2 becomes easy.

<Modified example of the fifth embodiment>
The substrate processing device 1 according to the modification may make the arm portion 95b of the first conduction portion 95 deformable.

(Sixth Embodiment)
The substrate processing apparatus 1 according to the sixth embodiment will be described with reference to FIG. Here, the parts different from the substrate processing apparatus 1 according to the first embodiment will be mainly described, and the same parts as those of the substrate processing apparatus 1 according to the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted. .. FIG. 21 is a perspective view showing a part of the substrate processing apparatus 1 according to the sixth embodiment. Although the right arm 5R will be described here as an example, the left arm 5L also has the same configuration.

The arm portion 100 of the substrate processing device 1 is a conductive member, for example, a carbon-containing resin. The arm portion 100 comes into contact with the processing liquid discharge nozzle 21 and conducts with the processing liquid discharge nozzle 21. Specifically, the arm portion 100 includes a contact portion 100a. The contact portion 100a contacts the processing liquid discharge nozzle 21 and conducts with the processing liquid discharge nozzle 21. A hole through which the processing liquid discharge nozzle 21 can slide is formed in the contact portion 100a.

The arm portion 100 is connected to an external conductive member (for example, a metal member) of the processing container 2 (see FIG. 1). The arm portion 100 forms a conduction path from the processing liquid discharge nozzle 21 to the external conductive member of the processing container 2. The conduction path is formed regardless of the position of the processing liquid discharge nozzle 21. That is, the processing liquid discharge nozzle 21 is constantly statically eliminated via the conduction path.

<Effect>
The substrate processing device 1 includes a processing liquid discharge nozzle 21 and an arm portion 100. The arm portion 100 comes into contact with the processing liquid discharge nozzle 21 and conducts with the processing liquid discharge nozzle 21.

As a result, the substrate processing device 1 can eliminate static electricity from the processing liquid discharge nozzle 21 by the arm unit 100 and suppress the charge of the processing liquid discharge nozzle 21. Therefore, the substrate processing device 1 can suppress the generation of particles due to the charging of the processing liquid discharge nozzle 21.

(7th Embodiment)
The substrate processing apparatus 1 according to the seventh embodiment will be described with reference to FIG. Here, the parts different from the substrate processing apparatus 1 according to the first embodiment will be mainly described, and the same parts as those of the substrate processing apparatus 1 according to the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted. .. FIG. 22 is a perspective view showing a part of the substrate processing apparatus 1 according to the seventh embodiment. Although the right arm 5R will be described here as an example, the left arm 5L also has the same configuration.

The substrate processing device 1 includes an ionizer 101. The ionizer 101 is attached to the arm portion 10. The ionizer 101 is provided above the processing liquid discharge nozzle 21. The ionizer 101 eliminates static electricity from the processing liquid discharge nozzle 21. The ionizer 101 irradiates X-rays toward the processing liquid discharge nozzle 21 to generate ions around the processing liquid discharge nozzle 21. The electric charge of the charged processing liquid discharge nozzle 21 is neutralized by ions, so that the processing liquid discharge nozzle 21 is statically eliminated. For example, a transparent resin plate is provided on the lower surface of the ionizer 101, and X-rays are irradiated through the resin plate.

When the substrate W is not held by the holding portion 3, the ionizer 101 irradiates the processing liquid discharge nozzle 21 with X-rays to eliminate static electricity from the processing liquid discharge nozzle 21. That is, when the processing container 2 does not have the substrate W, the ionizer 101 irradiates the processing liquid discharge nozzle 21 with X-rays to eliminate static electricity from the processing liquid discharge nozzle 21.

<Effect>
The substrate processing device 1 includes a processing liquid discharge nozzle 21 and an ionizer 101. The ionizer 101 eliminates static electricity from the processing liquid discharge nozzle 21.

As a result, the substrate processing device 1 can suppress the charging of the processing liquid discharge nozzle 21. Therefore, the substrate processing device 1 can suppress the generation of particles due to the charging of the processing liquid discharge nozzle 21.

The ionizer 101 eliminates static electricity from the processing liquid discharge nozzle 21 when the substrate W is not held by the holding portion 3.

As a result, the substrate processing apparatus 1 can prevent the processing liquid from adhering to the substrate W when the processing liquid discharge nozzle 21 is statically eliminated.

<Modified example of the seventh embodiment>
The ionizer 101 of the substrate processing apparatus 1 according to the modified example may generate ions internally, supply the generated ions to the processing liquid discharge nozzle 21, and eliminate static electricity from the processing liquid discharge nozzle 21. The ionizer 101 supplies the generated ions from a plurality of blower holes provided on the lower surface toward the processing liquid discharge nozzle 21.

(Modification example)
In the substrate processing device 1 according to the modified example, a part of the moving mechanism 11 may be arranged in the nozzle blocks 20, 51, or the arm portion 10. For example, the substrate processing device 1 according to the modified example rotates the nozzle block 51 (an example of a fixing member) with respect to the arm portion 10 by a moving mechanism 11 (an example of a rotating mechanism). As a result, the substrate processing apparatus 1 according to the modified example can change the discharge angle of the processing liquid during the substrate processing. Therefore, the substrate processing apparatus 1 according to the modified example can uniformly discharge the processing liquid to the peripheral edge of the substrate W, and can accurately etch the peripheral edge of the substrate W.

Further, in the substrate processing device 1 according to the modified example, the processing liquid supply pipe 5a is directly connected to the processing liquid discharge nozzle 80 as shown in FIG. 23 without providing the processing liquid supply passage 20a in the nozzle blocks 20 and 51. You may. FIG. 23 is a cross-sectional view showing a part of the arm 5 according to the modified example. For example, a resin nut 81 is provided at the tip of the processing liquid supply pipe 5a. Further, a screw thread into which the resin nut 81 can be screwed is formed in the first main body portion 82 of the processing liquid discharge nozzle 80.

As a result, the nozzle blocks 20 and 51 can be made into a simple structure without providing the treatment liquid supply path 20a in the nozzle blocks 20 and 51. Therefore, the cost can be reduced.

Further, in the processing liquid discharge nozzle 52 according to the modified example, the inner wall surfaces 31c and 31e of the nozzle discharge portion 31 are more hydrophilic than the inner wall surface 35c of the first flow path 35a and the inner wall surface 36c of the second flow path 36a. It may be higher. For example, in the processing liquid discharge nozzle 52 according to the modified example, a part of the inner wall surfaces 31c and 31e of the discharge flow path 31b including the inner wall surface 31e of the discharge port 31d may be subjected to a hydrophilic treatment. Further, in the treatment liquid discharge nozzle 52 according to the modified example, the nozzle body 30 is made of a resin having high chemical resistance and high hydrophobicity, and the nozzle discharge part 31 is made of a material having higher hydrophilicity than the nozzle body 30. You may.

As a result, air bubbles are less likely to adhere to the discharge port 31d, and when the treatment liquid is discharged, the air bubbles are less likely to be discharged together with the treatment liquid. Therefore, the discharge state of the processing liquid can be stabilized.

Further, the substrate processing device 1 according to the modified example may be provided with a substrate alignment mechanism on the arm 5. The board alignment mechanism is provided on the left arm 5L and the right arm 5R, respectively. The substrate alignment mechanism sandwiches the substrate W in the horizontal direction and aligns the position of the substrate W placed on the holding portion 3. Specifically, the substrate alignment mechanism adjusts the position of the substrate W so that the center of the substrate W and the rotation axis of the holding portion 3 coincide with each other. The substrate processing device 1 according to the modified example causes the holding portion 3 to hold the substrate W whose position has been adjusted by the substrate alignment mechanism.

As a result, the substrate processing apparatus 1 according to the modified example can accurately etch the peripheral edge of the substrate W.

Further, the substrate processing apparatus 1 according to each embodiment and the substrate processing apparatus 1 according to a modified example may be combined. For example, the gas discharge nozzle 71 may be provided in the substrate processing device 1 according to the first embodiment. For example, in the substrate processing apparatus 1 according to the fourth to seventh embodiments, the processing liquid supply unit 50 of the second embodiment may be used. Although the processing liquid discharge nozzles 21, 52, and 80 according to the respective embodiments have disclosed an example of etching the peripheral edge portion of the substrate W, the process of etching or cleaning not only the peripheral edge portion of the substrate W but also the entire surface of the substrate W. It may be used as a liquid discharge nozzle.

It should be noted that the embodiments disclosed this time are examples in all respects and are not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. Further, the above-described embodiment may be omitted, replaced or changed in various forms without departing from the scope of the appended claims and the purpose thereof.

1 Substrate processing device 2 Processing container 3 Holding part (example of substrate rotating part)
4 Outer cup (example of cup part)
5 arm (an example of nozzle arm)
6 Control device 6b Control unit 10, 100 Arm unit 11 Moving mechanism (an example of rotating mechanism)
12, 50, 70 Treatment liquid supply unit 20, 51 Nozzle block (example of fixing member)
21, 52, 80 Treatment liquid discharge nozzle 30, 53 Nozzle body 31 Nozzle discharge 31b Discharge flow path 31c Inner wall surface 31e Inner wall surface 32, 54 Connection part (example of angle changing mechanism)
35, 55, 82 1st main body 35a 1st flow path 36 2nd main body 36a 2nd flow path 36c Inner wall surface 60 Alignment section 71 Gas discharge nozzle 90, 95 1st conductive section 91, 96 2nd conductive section 91b , 96b Deformation part 100a Contact part 101 Ionizer W Substrate

Claims (23)

A processing liquid discharge nozzle that discharges the processing liquid used for substrate processing.
A first main body having a first flow path communicating with the treatment liquid supply path and a second main body having a second main body communicating with the first flow path and bending with respect to the first main body. Nozzle body having a part and
A processing liquid discharge nozzle provided with an angle changing mechanism for changing the angle of the nozzle body in the horizontal direction with respect to a fixing member to which the nozzle body is fixed. The processing liquid discharge nozzle according to claim 1, wherein the angle changing mechanism is a connection portion capable of changing the mounting position with respect to the fixing member. The processing liquid discharge nozzle according to claim 1, wherein the angle changing mechanism is a connecting portion that rotatably supports the first main body portion. The processing liquid discharge nozzle according to claim 3, wherein the nozzle main body portion and the connection portion include an alignment portion for adjusting the angle. A discharge flow path communicating with the second flow path is formed, and a nozzle discharge portion for discharging the processing liquid to the substrate is provided.
The treatment liquid discharge nozzle according to any one of claims 1 to 4, wherein the nozzle discharge portion is detachable from the tip of the second main body portion. The processing liquid discharge nozzle according to claim 5, wherein the diameter of the discharge flow path is smaller than the diameter of the second flow path. The treatment liquid discharge nozzle according to claim 5 or 6, wherein the inner wall surface of the nozzle discharge portion has higher hydrophilicity than the inner wall surface of the first flow path and the second flow path. The treatment liquid discharge nozzle according to any one of claims 1 to 7.
With the fixing member
The arm part to which the fixing member is attached and
A rotating mechanism that rotates the fixing member or the arm portion in the horizontal direction,
Nozzle arm with. The nozzle arm according to claim 8, wherein the rotating mechanism rotates the fixing member with respect to the arm portion. The nozzle arm according to claim 8 or 9, further comprising a gas discharge nozzle that discharges a gas that hits the substrate and discharges the processing liquid scattered above the substrate to the outside of the substrate. The nozzle arm according to claim 10, wherein the gas discharge nozzle is arranged inside the processing liquid discharge nozzle. The nozzle arm according to claim 10 or 11, wherein the gas discharge nozzle discharges the gas at a discharge angle larger than a discharge angle of the processing liquid with respect to a tangent to the substrate in the horizontal direction. The nozzle arm according to any one of claims 8 to 12,
It is equipped with a board rotating part that rotates the mounted board.
The processing liquid discharge nozzle is a substrate processing device that discharges a processing liquid toward the peripheral edge of the substrate. The nozzle arm according to any one of claims 8 to 12,
A board rotating part that rotates the mounted board,
A control unit that controls the processing liquid discharge nozzle and the substrate rotating unit is provided.
The control unit
The rotation angle in the rotation mechanism is set according to the substrate processing, and the rotation angle is set.
A substrate processing device that discharges a processing liquid toward a substrate according to the set rotation angle. The substrate processing apparatus according to claim 14, wherein the control unit changes the rotation angle during the substrate processing. The treatment liquid discharge nozzle according to any one of claims 1 to 7.
A first conductive portion that comes into contact with the treatment liquid discharge nozzle and conducts with the treatment liquid discharge nozzle.
A second conductive portion that conducts with the processing liquid discharge nozzle by contacting the first conductive portion and eliminates static electricity from the treatment liquid discharge nozzle.
The positions of the processing liquid discharge nozzle and the first conductive portion do not come into contact with the contact position where the first conductive portion and the second conductive portion contact, and the first conductive portion and the second conductive portion do not contact. A substrate processing device equipped with a moving mechanism for switching to a non-contact position. The substrate processing apparatus according to claim 16, wherein at least one of the first conductive portion and the second conductive portion has a deformed portion that deforms when it comes into contact with the other conductive portion. When the substrate processing is performed, a holding portion that holds the substrate and
A cup portion provided so as to surround the outer side of the substrate held by the holding portion is provided.
The substrate processing apparatus according to claim 16 or 17, wherein the second conductive portion is provided on the cup portion. A processing container for accommodating the processing liquid discharge nozzle and the moving mechanism is provided.
The second conductive portion is provided in the processing container and is provided.
The moving mechanism moves the processing liquid discharge nozzle and the first conductive portion up and down to switch the positions of the processing liquid discharge nozzle and the first conductive portion between the contact position and the non-contact position. Item 16. The substrate processing apparatus according to Item 16. The treatment liquid discharge nozzle according to any one of claims 1 to 7.
A substrate processing apparatus including an arm portion that comes into contact with the processing liquid discharge nozzle and conducts with the processing liquid discharge nozzle. The treatment liquid discharge nozzle according to any one of claims 1 to 7.
A substrate processing apparatus including an ionizer that eliminates static electricity from the processing liquid discharge nozzle. A holding unit for holding the substrate when the substrate processing is performed is provided.
The substrate processing apparatus according to claim 21, wherein the ionizer eliminates static electricity from the processing liquid discharge nozzle when the substrate is not held by the holding portion. A substrate processing method for discharging a processing liquid onto a substrate using the nozzle arm according to any one of claims 8 to 12.
The process of setting the rotation angle in the rotation mechanism according to the substrate processing, and
A substrate processing method including a step of discharging a processing liquid toward a substrate according to the set rotation angle.

Images