JP2021007132A - Imaging device and manufacturing method thereof - Google Patents

Abstract

To provide an imaging device and a manufacturing method thereof which do not lead to degradation in characteristics of an organic photoelectric conversion film even in chemical treatment during manufacturing and do not require high-temperature processing.SOLUTION: An imaging device includes: base layers 27 shaped in islands or stripes on a circuit board 2; a first bottom electrode 21 laminated on the base layers 27 and being in electric conduction with a reading circuit 3 including the circuit board 2; a first organic photoelectric conversion film 20 laminated on the first bottom electrode 21 and separated in correspondence to the base layers 27 separated from each other; an upper electrode 24 formed on the first organic photoelectric conversion film 20; a protection layer 25 covering a top of the upper electrode 24 and the base layers 27 separated from each other; a second bottom electrode 31 formed on the protection layer 25; and an inter-conductor pass electrode 22 which electrically connects the second bottom electrode 31 and the reading circuit 3 by passing through the protection layer 25 without passing through the first organic photoelectric conversion film 20.SELECTED DRAWING: Figure 1

Description

The present invention relates to an image pickup element and a method for manufacturing the same. Specifically, the organic photoelectric conversion film is provided by stacking a single layer or a plurality of layers, and the pixel electrode of the organic photoelectric conversion film and the readout circuit on the substrate are connected to operate. The present invention relates to an image pickup element having a pixel structure to be formed and a method for manufacturing the same.

The vertical color separation type image sensor is different from the single plate type color image sensor using a conventional color filter, and has three layers (RGB) of photoelectric conversion films that absorb light in a unique wavelength range and convert it into electric charges. It has a structure. In general, a vertical color separation type image sensor can efficiently use incident light, and is therefore expected to be applied to a small color camera having high resolution and high sensitivity. Various device structures have been proposed so far as a vertical color separation type image sensor using an organic photoelectric conversion film.

Among these, a device configuration is known in which three layers of organic photoelectric conversion films are stacked and the pixel electrodes of each organic photoelectric conversion film are connected to a readout circuit on a substrate to operate (see Patent Document 1 below). In the current Si process, a minute and high-performance readout circuit can be easily formed. Therefore, using such a technique, the pixel electrode of each RGB photoelectric conversion film is passed through the penetrating electrode penetrating the organic photoelectric conversion film to the Si substrate. By connecting to the accommodated read circuit, it is possible to read the signal of each pixel.

On the other hand, a method of forming a transparent oxide semiconductor TFT on each photoelectric conversion film and independently reading out the charge generated by each photoelectric conversion film has also been proposed (see Patent Documents 2 and 3 below).

Japanese Unexamined Patent Publication No. 2007-31167 Japanese Unexamined Patent Publication No. 2005-511115 Japanese Patent No. 5102692

By the way, in the technique described in Patent Document 1, when patterning is performed by photolithography or the like, the organic photoelectric conversion film is damaged by chemicals or the like, especially when forming a penetrating electrode that penetrates the organic photoelectric conversion film vertically. It is difficult to form an electrode that penetrates the organic photoelectric conversion film in the thickness direction because it is easily received and the characteristics of the photoelectric conversion film are significantly deteriorated.
Further, a high temperature process is required to form an oxide semiconductor TFT having excellent characteristics, but in the techniques described in Patent Documents 2 and 3, high temperature heating is required for improving the characteristics during production. A physical semiconductor TFT is formed on each organic photoelectric conversion film. Therefore, since it is necessary to prevent the organic photoelectric conversion film from being deteriorated by heat during the formation of the oxide semiconductor TFT, sufficient heat treatment cannot be performed, and the characteristics of the TFT should be sufficiently good. There is a problem that it cannot be done.

The present invention has been made in view of such a problem, and the organic photoelectric conversion film is not damaged by chemicals or the like used when patterning in the lamination process, and high-temperature heat treatment is not required. It is an object of the present invention to provide an image pickup device and a method for manufacturing the same, which do not cause deterioration of the characteristics of the organic photoelectric conversion film.

In order to achieve the above object, the image pickup device of the present invention and the manufacturing method thereof have the following configurations.
That is, the first image sensor according to the present invention is
An image sensor provided with an organic photoelectric conversion film above the circuit board so that light from above can be received.
A base layer formed in an island shape or a stripe shape on the circuit board,
A first lower electrode that is laminated on the upper part of the base layer and conducts with a readout circuit portion including the circuit board.
A first organic photoelectric conversion film among the organic photoelectric conversion films, which is laminated on the first lower electrode and separated according to the base layers separated from each other.
An upper electrode formed on the upper part of the first organic photoelectric conversion film and
A protective layer covering the upper part of the upper electrode and the base layers separated from each other,
A second lower electrode formed on the upper part of the protective layer and
It is characterized in that it is provided with an interconductor path electrode that passes through the protective layer without passing through the first organic photoelectric conversion film and electrically connects the second lower electrode and the readout circuit portion. Is.
In this case, it is preferable that the side surface of the interconductor pass electrode is covered with an insulating film.

The second image sensor according to the present invention is
An image sensor provided with an organic photoelectric conversion film above the circuit board so that light from above can be received.
A base layer formed in an island shape or a stripe shape on the circuit board,
A first lower electrode that is laminated on the upper part of the base layer and conducts with a readout circuit portion including the circuit board.
A first conductor-to-conductor path electrode that passes through the base layer and electrically connects the first lower electrode and the readout circuit portion.
A first organic photoelectric conversion film among the organic photoelectric conversion films, which is laminated on the first lower electrode and separated according to the base layers separated from each other.
An upper electrode formed on the upper part of the first organic photoelectric conversion film and
A protective layer covering the upper part of the upper electrode and the base layers separated from each other,
A second lower electrode formed on the upper part of the protective layer and
It is characterized in that it is provided with a second interconductor path electrode that electrically connects the second lower electrode and the readout circuit portion by passing through the protective layer without passing through the first organic photoelectric conversion film. To do.
In this case, it is preferable that the side surface of the second interconductor pass electrode is covered with an insulating film.

Further, it is preferable that the film thickness of the base layer is larger than the total film thickness of the organic photoelectric conversion film and the upper electrode laminated.
Further, it is possible that the CMOS image sensor is mounted on the light incident side of the circuit board.

Further, the method for manufacturing an image sensor according to the present invention is as follows.
This is a method for manufacturing an image sensor arranged above a circuit board so that light from above is incident on an organic photoelectric conversion film.
An island-shaped or striped base layer is formed on the circuit board.
A first lower electrode that conducts with the readout circuit portion including the circuit board is laminated on the upper part of the base layer.
A first organic photoelectric conversion film among the organic photoelectric conversion films separated according to the base layers separated from each other is laminated on the first lower electrode.
An upper electrode is laminated on the upper part of the first organic photoelectric conversion film.
After that, the upper part of the upper electrode and the base layers separated from each other are covered with a protective layer.
A second lower electrode is formed on the upper part of the protective layer.
The interconductor pass electrode that electrically connects the second lower electrode and the readout circuit portion is characterized in that it passes through the protective layer without passing through the first organic photoelectric conversion film.

According to the image sensor and the method for manufacturing the image sensor of the present invention, the inside of the protective layer covering the base layer where the first organic photoelectric conversion film is interrupted is formed without using the penetrating electrode penetrating the inside of the first organic photoelectric conversion film. Since the second lower electrode for the pixel electrode and the readout circuit section are connected by the interconductor pass electrode to be passed through, each organic photoelectric conversion film is damaged by chemicals or the like used when patterning is performed in the lamination process. Never receive.

Further, since the interconductor path electrode is passed through the region where the organic photoelectric conversion film is interrupted to connect the pixel electrode and the readout circuit portion, it is not necessary to form an oxide semiconductor TFT in each layer, so that the temperature is high. It does not cause deterioration of the characteristics of the organic photoelectric conversion film due to the process.

Japanese Patent Laying-Open No. 2009-123780 also describes a technique relating to a manufacturing method that does not damage the organic photoelectric conversion film. In this technique, an insulating protrusion for arranging a conductor for electrode connection is used. By forming the film so that it does not come into direct contact with the organic photoelectric conversion film, patterning is possible, and the structure and operation are different from those of the image pickup device of the present invention and the manufacturing method thereof. Further, as compared with the technique described in this publication, the image pickup device and the method for manufacturing the image pickup device of the present invention have an excellent effect that the patterning of electrodes can be easily performed.

It is schematic cross-sectional view which shows the conceptual cross-sectional structure of the image sensor which concerns on embodiment of this invention (Example 1). It is the schematic which shows the arrangement state of the lower electrode of the image pickup device which concerns on Example 3. FIG. It is the schematic which shows the connection relation from the circuit board of the image pickup device which concerns on Example 1 to the first upper electrode. It is the schematic which shows the process (the 1: (a)-(c)) of the manufacturing method of the image pickup device which concerns on Example 1. FIG. It is a schematic diagram which shows the process (the 2: (d)-(f)) of the manufacturing method of the image pickup device which concerns on Example 1. FIG. It is the schematic which shows the process (the 3: (g)-(i)) of the manufacturing method of the image pickup device which concerns on Example 1. FIG. It is the schematic which shows the process (the 4: (j)-(l)) of the manufacturing method of the image pickup device which concerns on Example 1. FIG. It is the schematic which shows the process (the 5: (m)-(n)) of the manufacturing method of the image pickup device which concerns on Example 1. FIG. It is a schematic cross-sectional view which shows the process (the 1: (o)-(p)) of the manufacturing method of the image sensor which concerns on the modification of Example 1. FIG. It is a schematic cross-sectional view which shows the process (the 2: (q)-(r)) of the manufacturing method of the image sensor which concerns on the modification of Example 1. FIG. It is a schematic cross-sectional view which shows the process (the 3: (s)-(u)) of the manufacturing method of the image pickup element which concerns on the modification of Example 1. FIG. It is a schematic cross-sectional view which shows the process (the 4: (v)-(w)) of the manufacturing method of the image sensor which concerns on the modification of Example 1. FIG. It is schematic cross-sectional view which shows the conceptual cross-sectional structure of the image sensor which concerns on Example (Example 2) different from the image sensor shown in FIG. The image pickup device shown in FIG. 1 is a schematic cross-sectional view showing a conceptual cross-sectional structure of the image pickup device according to still another embodiment (Example 3).

Hereinafter, the image pickup device and the manufacturing method thereof according to the embodiment of the present invention will be described with reference to the drawings.

<Example 1>
FIG. 1 shows a cross-sectional view of the stacked image sensor 1 according to the first embodiment. However, since FIG. 1 conceptually shows the laminated structure of the laminated image sensor 1 according to the first embodiment for convenience of explanation, there are some parts that are not consistent with the actual laminated image sensor 1. (The same applies to the stacked image sensors 1a and 1b in FIGS. 13 and 14). Note that FIG. 2 is a conceptual diagram when a part of the arrangement of the second lower electrode corresponding to each pixel of the stacked image sensor 1 is viewed from above (actually, Example 3 (FIG. 3) described later. Since it corresponds to (see 14), details will be described later).
In this embodiment, the photoelectric conversion unit 4 is formed on the readout circuit unit 3, and the photoelectric conversion unit 4 includes a first organic photoelectric conversion portion including a first organic photoelectric conversion film 20 and a second organic photoelectric conversion film 30. It is composed of a second organic photoelectric conversion part including, and is provided with a photoelectric conversion part having a three-layer structure in which a CMOS image sensor 10 (formed at the uppermost part of the readout circuit part 3) is added to these two photoelectric conversion parts. It is said to be an imaging element (RGB color image imaging element). It should be noted that the light is configured to be incident from above in the figure.

First, the CMOS image sensor 10 is configured to receive light in the wavelength range transmitted through the first organic photoelectric conversion unit and the second organic photoelectric conversion unit (for example, light in any of the wavelength regions R, G, and B). It is formed for each pixel 41.

Further, the first organic photoelectric conversion unit including the first organic photoelectric conversion film 20 is formed on the CMOS image sensor 10 and is formed by laminating a plurality of films. The laminated structure consists of a first connection electrode 23 (formed on the circuit board 2) that connects the first lower electrode (functioning as a pixel electrode) 21 and the readout circuit unit 3, and the upper surface of the first connection electrode 23. A base layer 27 formed in an island shape or a stripe shape so as not to cover a part of the base layer 27, a first lower electrode 21 laminated on the upper portion of the base layer 27, and a first lower electrode 21 laminated on the first lower electrode 21. The first organic photoelectric conversion film 20 separated according to the adjacent base layer 27, and the first upper electrode (functioning as a counter electrode) 24 laminated on the upper portion of the first organic photoelectric conversion film 20. The base layer separation groove 38 between the upper part of the first upper electrode 24 (and the base layer 27, the first lower electrode 21, the first organic photoelectric conversion film 20 and the side portion of the first upper electrode 24), and the separated base layers 27 Between the organic film protective layer 25 laminated so as to cover the surface and the first conductor which is conductive with the first lower electrode 21 and is embedded over the entire length of the base layer 27 in the thickness direction and is connected to the first connection electrode 23. It is composed of a laminate having a pass electrode 22.

On the other hand, the second organic photoelectric conversion film 30 that photoelectrically converts light in a wavelength range different from that of the first organic photoelectric conversion film 20 (the two organic photoelectric conversion films 20 and 30 are, for example, any one of R, G, and B). The second organic photoelectric conversion unit including (photoconverting light in different wavelength regions) is formed on the first organic photoelectric conversion unit, and is substantially the same as the first organic photoelectric conversion unit. It is made by laminating a plurality of films. The laminated structure includes a second connection electrode 33 (formed at the uppermost portion of the readout circuit unit 3) connecting the second lower electrode (functioning as a pixel electrode) 31 and the readout circuit unit 3, and an organic film protection. The second lower electrode 31 laminated on the upper part of the layer 25, the second organic photoelectric conversion film 30 laminated on the organic film protective layer 25 on which the second lower electrode 31 is laminated, and the second organic photoelectric conversion film 30. The second upper electrode (functioning as a counter electrode) 34 laminated on the upper portion of the organic film protective layer 25 is electrically connected to the second lower electrode 31 and is embedded over the entire length of the organic film protective layer 25 in the thickness direction, and the upper portion is formed by the base layer 27. It is configured to have a second connection electrode 33 that is not covered and a second inter-conductor pass electrode 32 that conducts with the second connection electrode 33.

The side surface of the second conductor-to-conductor pass electrode 32 is covered with an insulating film 36.

In this embodiment, an image of a three-layer structure including a CMOS image sensor 10, a first organic photoelectric conversion unit including a first organic photoelectric conversion film 20, and a second organic photoelectric conversion unit including a second organic photoelectric conversion film 30 is imaged. Although it is said to be an element (RGB color image imaging element), in the imaging element of the present invention, each of the organic photoelectric conversion films has three layers of organic photoelectric having sensitivity to R, G, or B color light different from each other. It can be changed to various other modes such as an image pickup element provided with a conversion film and a CMOS image sensor at the bottom having a sensitivity other than visible light. Further, the configuration without a CMOS image sensor may be used, and the wavelength detected by the organic photoelectric conversion unit can be freely selected according to the material of the organic photoelectric conversion film.

Further, the organic photoelectric conversion films 20 and 30 are made of electron transport materials and holes in order to reduce dark current, which is a current output when no light is input, and to improve the quantum efficiency of the organic photoelectric conversion film. The transport material, the electron injection blocking (electron blocking) material, the hole injection blocking (hole blocking) material, and the like may be formed so as to be mixed or laminated with the organic photoelectric conversion material. The image sensor of the present invention is a concept that includes various modifications described in the present specification.

In addition to the circuit board 2, the reading circuit unit 3 is formed with a thin film, an AD conversion circuit, a DA conversion circuit, a memory, and other circuits for reading charges from the pixel electrodes of the organic imaging element and peripheral circuits thereof. (Here, referred to as a readout circuit as an aggregate including those members), miniaturization is possible by using a Si substrate. The constituent material of the circuit board 2 is not limited to Si, and various suitable materials can be adopted, and for example, a glass material can be adopted. When the glass material is used in this way, a transparent image pickup element can be obtained by using a structure in which an oxide semiconductor TFT or the like is formed on the substrate.

The configuration for connecting the readout circuit and the pixel electrode is basically one lower electrode (pixel electrode) for each organic photoelectric conversion film (first organic photoelectric conversion film 20 and second organic photoelectric conversion film 30) of each pixel 41. ), The inter-conductor pass electrode (first inter-conductor pass electrode 22, second inter-conductor pass electrode 32) and the connection electrode (first connection electrode 23, second connection electrode 33) formed on the circuit board 2. It is configured to be electrically connected to the readout circuit unit 3 provided on the circuit board 2 via the circuit board 2.

In the stacked image sensor 1 shown in FIG. 1, the second upper electrode 34 and the reading circuit unit 3 are not connected to each other, but a connecting electrode for the upper electrode is provided on the reading circuit unit 3. The second upper electrode 34 and the reading circuit unit 3 may be connected to each other. In that case, the interconductor pass electrode formed in the same manner as the second interconductor pass electrode 32 shown in FIG. 1 and passing through the organic film protective layer 25 is connected as described later (FIGS. 9 and 10). reference). Further, when the base layer 27 is formed in an island shape, the first upper electrode 24 cannot take out the electrode to the outside of the film forming area 6 (see FIG. 3) described later, so that the first upper electrode 24 is It is important to connect to the readout circuit unit 3 by the interconductor pass electrode configured in the same manner as the second interconductor pass electrode 32 shown in FIG.

As described above, the periphery (side surface) of the second inter-conductor path electrode 32 is covered with the insulating film 36, and the first organic photoelectric conversion film residue 20'and the first upper portion left in the base separation groove 38 described later. Insulation is maintained from the electrode residue 24'. Therefore, the second conductor-to-conductor path electrodes 32 of the pixels 41 adjacent to each other are configured so as not to conduct with each other via some kind of conductive material.

The base layer 27 is made of an island-shaped or striped insulating material on the circuit board 2. The first lower electrode 21 formed on the base layer 27 is configured such that one first interconductor pass electrode 22 is connected to each pixel 41. As a result, the electric charge generated in the first organic photoelectric conversion film 20 can be read out by the reading circuit of the reading circuit unit 3. At that time, when a plurality of pixels 42 are connected on the base layer 27 to operate as if they are composite pixels, the entire plurality of pixels are connected by one first conductor-to-conductor pass electrode 22. Can be.

The first inter-conductor path electrode 22 embedded over the entire length of the base layer 27 in the thickness direction can be arranged in a base because, for example, in the mode of an imaging element in which the CMOS image sensor 10 is not formed, the restriction on arrangement can be reduced. It is easy to arbitrarily determine the horizontal position of the pixel 41 formed on the layer 27. However, as in the embodiment shown in FIG. 1, when the horizontal positions of the pixels are aligned between the first organic photoelectric conversion unit and the second organic photoelectric conversion unit, the second conductor-to-conductor path electrode 32 is arranged. It is important to make a decision in consideration of the conditions for the installation position.

Further, the film thickness of the base layer 27 is set to be equal to or larger than the total film thickness of the first organic photoelectric conversion film 20 and the first upper electrode 24. As a result, the adjacent first organic photoelectric conversion films 20 and the first upper electrodes 24 formed on the base layer 27 are surely separated by the base separation groove 38 shown by the dotted line in FIG. To. That is, by forming the base separation groove 38 having such a depth, the first organic photoelectric conversion film 20 and the first upper electrode 24 can be patterned for each base layer 27.

As shown in FIG. 3, when the base layer 27 is formed in a striped shape, the first upper electrode 24 is outside the film formation area 6 shown by the dotted line on which the first organic photoelectric conversion film 20 is formed. The electrode can be taken out at the electrode taking-out portion 62 arranged in the region of. The electrode extraction unit 62 may be configured to connect the readout circuit unit 3 and the first upper electrode 24 by an appropriate means.

When the base layer 27 is formed in an island shape, one pixel 41 may be formed by one island, or a plurality of pixels may be formed by one island. In the latter case, in the region within the film forming area 6, it is sufficient that one connecting portion between the first upper electrode 24 and the reading circuit portion 3 is provided on each island, so that the first connecting electrode 23 is arranged. It is possible to reduce the number.

In order to properly separate the first organic photoelectric conversion film 20 by the base layer 27, it is desirable that the side surface of the base layer 27 has an angle close to vertical or the base layer 27 itself has a reverse taper shape. .. However, if the base separation groove 38 has a deep structure, it can be sufficiently separated. In that case, even if the organic photoelectric conversion film member adheres to the side surface of the base layer 27, it is not configured to be in contact with the first organic photoelectric conversion film 20 formed on the upper part of the base layer 27, so that the base is formed when the film is formed. It is possible to suppress deterioration of the characteristics of the first organic photoelectric conversion film 20 on the upper part of the layer 27.

The organic film protective layer (sometimes referred to simply as a protective layer) 25 is configured to cover the upper portion of the first upper electrode 24 and fill the base separation groove 38, and is configured to be filled between the second conductors. It plays a role of preventing the first organic photoelectric conversion film 20 from being damaged when the pass electrode 32 is formed. In order to obtain such a shape, it is preferable to form the protective layer 25 using a material capable of coating and forming a film. However, the protective layer 25 does not have to be made of a single material. For example, the base separation groove 38 is filled with a coating material to be flattened, and then a film is formed with another insulating film having excellent processing, and the first upper portion is formed. It may be made of a plurality of materials by covering the upper part of the electrode 24.

The protective layer 25 is formed at the time of forming the first organic photoelectric conversion film residue 20'and the first upper electrode residue 24' (the first organic photoelectric conversion film 20 and the first upper electrode 24) left below the base separation groove 38. Since it is loaded on the upper part of the base separation groove 38 (which is formed and remains with a step), when connecting to the second connection electrode 33, the protective layer 25 and the total lengths of the residues 20'and 24'in the thickness direction It will be formed so as to be embedded over. At that time, as will be described later, a process of forming through holes is involved, but the residues 20'and 24'(residues) dissolved by a chemical or the like may be discharged to the outside through the through holes. After discharging each of these residues 20'and 24'(residues), the space can be filled with an insulating film that can be coated and formed, if necessary.

When the residues 20'and 24'(residues) are discharged from the base separation groove 38, or when the conductivity of the residues 20'and 24'(residues) is lost, the second conductor-to-conductor pass electrode 32 The insulating film 36 around the side surface does not have to be formed. Here, the state in which the conductivity is lost means that the layer structure of the residue 20', 24'(residue) or the like is destroyed by chemicals or the like, and the residue 20', 24'(residue) is passed between the electrodes. Refers to the state in which conduction is no longer possible.

In order to increase the aperture ratio of the pixel 41, it is desirable that the second connection electrode 33 has a structure as fine as possible within a range in which a low resistance state can be ensured. As a result of such a configuration, in the second interconductor pass electrode 32, the ratio of the height to the electrode area in the pixel 41 (aspect ratio) becomes large, but as a manufacturing method of the second interconductor pass electrode 32, It can be easily formed by using a plating method or the like.

In this way, the second lower electrode 31 is connected to the second connection electrode 33 via the second interconductor path electrode 32. A second organic photoelectric conversion film 30 is laminated on the upper portion of the second lower electrode 31, and a second upper electrode 34 is laminated on the upper portion thereof.

In the laminated image sensor 1 of this embodiment, since the organic photoelectric conversion films 20 and 30 are composed of two layers, the electric charge generated by the second organic photoelectric conversion film 30 of the second layer is substantially directly below. It is read independently for each pixel 41 from the second lower electrode 31 located. Therefore, the second organic photoelectric conversion film 30 and the second upper electrode 34 do not need to be separated from each other by the adjacent pixels 41.
However, when the organic photoelectric conversion film is composed of three layers, the second layer also needs to be separated from each other by adjacent pixels. In that case, a base layer different from the base layer 27 may be formed directly under the second lower electrode 31 to form a structure similar to that of the first layer. That is, by making the structure of the second layer the same as that of the first layer, the organic photoelectric conversion film can form an image pickup element having three layers. Even when the organic photoelectric conversion film is composed of four or more layers, the separation process of the organic photoelectric conversion film corresponding to each pixel 41 as described above may be performed according to the number of layers.
In FIG. 1, a layer is not formed on the upper part of the second upper electrode 34, but if necessary, various layers used in a conventional imaging element such as a protective film may be formed. Is possible.

Hereinafter, the manufacturing method of the image pickup device according to this embodiment will be described in order of steps with reference to FIGS. 4 to 8.
The method for manufacturing an image sensor according to the first embodiment is particularly embedded over the entire length of the organic film protective layer 25 in the base separation groove 38 formed at a position where the first organic photoelectric conversion film 20 is interrupted. It is characterized by the method of forming the inter-conductor path electrode, and basically, the image sensor is manufactured by applying the general-purpose processing technology used in the semiconductor process throughout the entire process.

First, FIGS. 4 and 5 show the formation process of the base layer 27.
The CMOS image sensor 10, the first connection electrode 23, and the second connection electrode 33 are laminated in a predetermined arrangement on the circuit board 2 (FIG. 4A). After that, a base layer 27 made of an insulating material is formed (FIG. 4 (b)). The insulating material constituting the base layer 27 is made of an organic material, an inorganic material, or a hybrid material thereof, and is formed by various film forming methods suitable for the material to be used, such as a vapor deposition method, a sputtering method, or a coating method. Can be done.

Next, the first through hole 122 is formed by removing the base layer 27 above the first connection electrode 23 (FIG. 4 (c)). The formation of the first through hole 122 is performed by a commonly used processing process such as etching based on a photolithography method or application of a processing technique such as laser drawing. When the base layer 27 is formed of a photosensitive material such as an ultraviolet curable resin, it can be directly processed by exposure / etching through a photomask.

Subsequently, a conductive material is injected into the first through hole 122 to form a first interconductor path electrode 22 that conducts with the first connection electrode 23 (FIG. 5 (d)). As the electrode material, it is preferable to use a metal, a conductive paste, or the like, and it is preferable to form the electrode material by using a manufacturing method suitable for each material (for example, a film forming method such as a vapor deposition method or a sputtering method).
When the electrode material is made of metal, it can be formed by various plating methods such as an electrolytic plating method. For example, when the plating method is used, a seed layer or the like can be appropriately formed on the surface. Further, when the electrode material is formed of a conductive paste, it is possible to apply a printing technique such as vacuum screen printing or a method using a coating technique, but the surface should be coated with metal in advance. May be good. Further, after filling the first through hole 122 with a metal or a conductive paste or the like, a polishing method is used to remove the metal or the conductive paste adhering to the surface of the base layer 27 or flatten the surface of the base layer 27. It is also possible to perform processing such as paste.

Next, as shown in FIG. 5 (e), a conductive material (metal, conductive resin, etc.) is formed on the surface of the base layer 27 and patterned to form the first lower electrode (pixel electrode) 21. .. At this time, the metal, the conductive resin, and the like can be formed by a general-purpose film forming technique suitable for each material, such as a vapor deposition method, a sputtering method, a printing method, and a coating method.
Further, since the surface of the base layer 27 is basically not formed with a structure such as protrusions, it is easy to form a resist material or a film through a mask when patterning the first lower electrode 21, and further, in laser drawing. However, it is possible to avoid scattering due to laser light on the uneven surface. Therefore, when patterning the first lower electrode 21, a general patterning technique suitable for each material, such as etching by a photolithography method, laser drawing, or film formation through a mask provided with an opening, is used. It is possible to apply.

It is also possible to form the first lower electrode 21 by patterning the material left on the upper part of the base layer 27 when forming the first interconductor pass electrode 22. In FIG. 5 (e), in the connection portion 222 of the first lower electrode 21 with the first interconductor pass electrode 22, the first lower electrode 21 is arranged so as to cover the first interconductor pass electrode 22. The structure is such that the first lower electrode 21 and the first conductor pass electrode 22 are conductive.

Finally, the formation process of the base layer 27 is completed by patterning the base layer 27 in an island shape or a stripe shape to form the base separation groove 38 (FIG. 5 (f)). In the present embodiment, as shown in FIG. 5 (f), the base layer 27 is patterned in a striped shape (the striped shape means that the base layer 27 is arranged in a plurality of parallel rows as shown in FIG. 3). The second connection electrode 33 is exposed through the base separation groove 38 (referred to as being provided). At this time, for the patterning of the base layer 27, it is possible to use a processing technique suitable for the material constituting the base layer 27, and for example, a processing technique by a photolithography method or a laser drawing method is used.

As described above, in order to properly separate the first organic photoelectric conversion film 20, the base layer 27 preferably has a shape having a side surface that rises perpendicularly to the substrate, and the base layer 27 itself is reversed. It is more preferable to have a tapered structure. Such processing is achieved by proper patterning in addition to proper selection of the material of the base layer 27. Further, for example, by performing dry etching, it is possible to form the base separation groove 38 having a large aspect ratio, which is the ratio of the height to the electrode area in the pixel 41.

It is also possible to form the through hole 122, the second interconductor pass electrode 32, and the first lower electrode 21 after the base separation groove 38 is formed, and the order of these processes is interchanged. It is possible. For example, the process may be simplified by forming the through hole 122 and the base separation groove 38 at the same time. However, if it is difficult to pattern the first lower electrode 21 with a step, FIG. 4 (a) → FIG. 4 (b) → FIG. 4 (c) → FIG. 5 (d) → FIG. 5 (e). ) → It is desirable to form one step at a time in the order shown in Fig. 5 (f).

FIG. 6 shows the formation process of the first photoelectric conversion unit.
The first organic photoelectric conversion film 20 is formed on the base layer 27 on which the first lower electrode 21 separated by the base separation groove 38 is formed. The first organic photoelectric conversion film 20 is formed by a film forming method suitable for the material constituting the organic photoelectric conversion film, such as a thin film deposition method or a coating method. At this time, due to the step formed between the upper surface of the base layer 27 and the bottom surface of the base separation groove 38, the first organic photoelectric conversion film 20 deposited on both becomes discontinuous, and the first organic on the adjacent base layer 27 becomes discontinuous. The photoelectric conversion film 20 is patterned so as to be separated by the base separation groove 38 (FIG. 6 (g)).

Next, the first upper electrode 24 is formed on the first organic photoelectric conversion film 20 (FIG. 6 (h)). The first upper electrode 24 can be formed in the same manner as the first lower electrode 21 in terms of forming material and film forming method, and a generally used conductive material can be formed by a general-purpose process technique. At this time, similarly to the first organic photoelectric conversion film 20, the first upper electrode 24 deposited on both becomes discontinuous due to the step formed between the upper surface of the base layer 27 and the bottom surface of the base separation groove 38. The first organic photoelectric conversion film 20 on the adjacent base layer 27 is patterned so as to be separated by the base separation groove 38. At this time, the film thickness of the base layer 27 is the total film thickness of the first organic photoelectric conversion film residue 20'(see FIG. 1) and the first upper electrode residue 24'(see FIG. 1) deposited in the base separation groove 38. Each of the residues (residues) 20'and 24'in the base separation groove 38 is in a state of not having a conductive connection function between the adjacent pixels 41.

Next, as shown in FIG. 6 (i), the entire base layer 27, the first lower electrode 21, the first organic photoelectric conversion film 20 and the first upper electrode 24, and the base separation groove 38 are covered with the organic film protective layer 25. Cover with. This completes the process of forming the first photoelectric conversion unit.
It is possible to apply various insulating materials and various insulating film forming methods to the formation of the organic film protective layer 25, but the characteristics of the organic photoelectric conversion film material and the electrode material are deteriorated. It is desirable to appropriately select a material and a forming method that are difficult to induce.

Further, as shown in FIG. 1 and FIG. 13 described later, it is important to protect the side surface of the first organic photoelectric conversion film 20 (20c) by the organic film protective layer 25 (25c). For example, by applying an ultraviolet curable resin or a thermosetting resin that functions as an organic film protective layer 25 to the side surface of the first organic photoelectric conversion film 20, and applying a method of curing these resins by ultraviolet irradiation or heat treatment. , It is possible to appropriately cover and protect the side surface of the first organic photoelectric conversion film 20. The types of the ultraviolet curable resin and the thermosetting resin can be appropriately selected according to the material of the first organic photoelectric conversion film 20.

FIG. 7 shows the formation process of the second photoelectric conversion unit.
A second through hole 132 is formed by removing the organic film protective layer 25 above the second connection electrode 33 by applying a processing process such as etching based on a photolithography method or laser drawing (FIG. 7 (j). )). When the organic film protective layer 25 is formed of a photosensitive material such as an ultraviolet curable resin, the second through-hole 132 can be directly formed by exposure / etching through a photomask. At this time, the base layer 27 is not formed on the upper part of the second connection electrode 33, and the first organic photoelectric conversion film 20 on the base layer 27 is not subjected to processing treatment (chemical treatment, heat treatment, etc.) and is second transparent. Hole 132 can be formed. That is, the preparation for forming the second conductor-to-conductor pass electrode 32, which is a wiring electrode extending in the thickness direction of the first organic photoelectric conversion film 20, is ready without deteriorating the characteristics of the first organic photoelectric conversion film 20.

After that, a conductive material is injected into the second through hole 132 to form the second interconductor pass electrode 32 (FIG. 7 (k)). As shown in FIG. 1 and FIG. 13 described later, the side surface of the second inter-conductor path electrode 32 is covered with an insulating film 36 (36c), and by providing the insulating film 36 (36c), the first organic is provided. Between the second conductors of each pixel 41 (41c, 42c) via the photoelectric conversion film residue 20'(residue: see FIG. 1) and the first upper electrode residue 24'(residue: see FIG. 1). Care is taken so that the pass electrodes 32 (32c) do not conduct with each other.

The insulating film 36 is formed by immersing the second through hole 132 in a coating solution and drying the inside of the second through hole 132 so that the inner surface of the second through hole 132 is thinly coated. A thin insulating film can be formed.
As another forming method, after the second through hole 132 is filled with a predetermined insulating material, a through hole smaller than the initially formed hole diameter may be formed inside the first hole forming portion. Good.
As a method of ensuring the insulating property without forming the insulating film 36, a solution for etching the forming material of the first organic photoelectric conversion film 20 and the first lower electrode 21 is immersed inside through the second through hole 132. Examples include dissolution or removal techniques. As a result, the insulation between the second conductor path electrodes 32 is ensured. At this time, since the first organic photoelectric conversion film 20 on the base layer 27 is covered with the organic film protective layer 25, dissolution or the like due to immersion of the solution does not occur. Further, after removing the first organic photoelectric conversion film 20 and the first lower electrode 21, a resin material may be injected to fill the internal space, and then the upper portion of the second connection electrode 33 may be opened again by etching or the like. ..

As the electrode material of the second interconductor pass electrode 32, a metal, a conductive paste, or the like can be used as in the case of the first interconductor pass electrode 22 described above, and the electrode material can be formed by a method suitable for each electrode material. it can. When either the metal or the conductive paste is used, the same manufacturing method as in the case of the first interconductor pass electrode 22 described above can be adopted.

Next, a conductive material (metal, conductive resin, etc.) is formed on the upper surface of the organic film protective layer 25 on which the second interconductor pass electrode 32 is formed, and the second lower electrode 31 is formed by patterning. It is formed (Fig. 7 (l)). The formation of the second lower electrode 31 can be performed by the same method as the method for forming the first lower electrode 21 described above. That is, all the methods for forming the first lower electrode 21 described above can be used.
Therefore, in FIG. 7 (l), at the connection portion 232 of the second lower electrode 31 with the second interconductor pass electrode 32, the second lower electrode 31 is arranged so as to cover the second interconductor pass electrode 32. The second lower electrode 31 is connected to the second interconductor path electrode 32.

Further, the second organic photoelectric conversion film 30 is formed over the entire upper surface of the organic film protective layer 25 on which the second lower electrode 31 is formed (FIG. 8 (m)). The second organic photoelectric conversion film 30 can be formed by using the same forming material and film forming method as the forming material and film forming method of the first organic photoelectric conversion film 20.
Further, a second upper electrode 34 is formed on the upper surface of the second organic photoelectric conversion film 30 (FIG. 8 (n)). The second upper electrode 34 can be formed by using the same forming material and film forming method as those of the first upper electrode 24, the first lower electrode 21, or the second lower electrode 31.

<Modification of Example 1>
In the embodiment of the first embodiment, since the interconductor path electrode embedded over the entire length of the second organic photoelectric conversion film 30 in the thickness direction is not formed, it is not necessary to pattern the second organic photoelectric conversion film 30.
However, when the second upper electrode 34 is connected to the readout circuit unit 3, it becomes necessary to form an interconductor pass electrode that passes between the adjacent second organic photoelectric conversion films 30. In that case, the third inter-conductor pass electrodes 52a and b, the upper connection electrode 63, and the upper inter-conductor pass electrode 72 are formed by using the process shown in FIGS. 9 and 10, and read out as the second layer upper electrode 34a. A configuration for connecting the third connection electrode 53a formed at the uppermost portion of the circuit unit 3 may be adopted (modification mode 1).

When the number of organic photoelectric conversion films is three or more, each time the base layer is formed by the process of FIG. 6, the organic photoelectric conversion film can be formed by applying the processes of FIGS. 7 and 8 thereafter. 11 and 12 show a process of forming an element in which three layers of organic photoelectric conversion films 20b, 30b, and 50b are laminated (modification mode 2).

Here, the above-mentioned modification mode 1 shown in FIGS. 9 and 10 will be described in detail. In the description of this modification mode 1, with respect to the members similar to those of the first embodiment, the reference numerals given to the members of the first embodiment and the addition of a are attached to the corresponding members ( Except for the reference numerals of the inter-conductor path electrodes), the description substantially overlapping with the above-described 1 will be omitted.
In this modification mode 1, the second upper electrode 34a of the second layer is connected to the readout circuit unit 3a, and FIG. 9 (o) has the same configuration as FIG. 11 (u) described later. Is shown. Here, after forming the third inter-conductor pass electrode (upper portion) 52b as shown in FIG. 9 (p), the upper inter-conductor pass electrode 72 is formed as shown in FIG. 10 (q), and finally, the first The three-conductor inter-conductor pass electrode (upper portion) 52b and the upper inter-conductor pass electrode 72 are connected by the upper connection electrode 63. These configurations can be easily opened or embedded with electrodes by applying the same process as the configurations shown in FIGS. 4 (c), 5 (d), 7 (j), 7 (k), and the like. Therefore, the details are omitted. Further, the upper connection electrode 63 can also be easily formed by film formation or etching of the electrode material. The method and order of formation of the third inter-conductor pass electrodes 52a and b and the upper inter-conductor pass electrode 72 can be appropriately set, and can be appropriately performed by a normal semiconductor process.

Next, the modified mode 2 shown in FIGS. 11 (s) to 12 (w) described above will be described in detail. In the description of the modified embodiment 2, with respect to the members similar to those of the first embodiment, the reference numerals given to the members of the first embodiment and the addition of b shall be attached to the corresponding members ( Except for the reference numerals of the inter-conductor path electrodes), the description substantially overlapping with the above-mentioned Example 1 will be omitted.
In this modification 2, the connection portion between the second lower electrode 31b and the readout circuit portion 3b at the lower portion of the second organic photoelectric conversion film 30b in the second stage is connected to the second connection electrode 33b, and the third stage in the third stage. The connecting portion between the third lower electrode 61 and the reading circuit portion 3b at the lower part of the organic photoelectric conversion film 50 is designated as the third connecting electrode 53b, and the second interconductor pass electrodes 32a and b and the third interconductor pass electrodes 52a and b, respectively. Connected by. That is, in FIGS. 11 (s) to 12 (w), the third inter-conductor pass electrodes 52a and 52 are added to the second inter-conductor pass electrode 32 shown in FIG. 7 (k). In FIGS. 11 (s) to 12 (w), the first connection electrode 23b, the second connection electrode 33b, and the third connection electrode 53b are arranged in a straight line, but these arrangements have a pixel structure. It can be set freely according to.

Specifically, as shown in FIG. 11 (t), a second base layer 37b is formed, and the second lower electrode 31b and the second connection electrode 33b are connected by the second inter-conductor path electrodes 32a and b. These configurations can be formed by the same manufacturing process as in FIGS. 4-5. That is, a second base layer 37b similar to the base layer 27 shown in FIG. 4B is formed on the upper surface of the organic film protective layer 25b shown in FIG. 11 (s). Next, a second through hole similar to the first through hole 122 shown in FIG. 4 (c) is provided with a second interconductor pass electrode 32a shown in FIG. 11 (s) (here, a second interconductor pass electrode (lower portion)). It is formed on the second base layer 37b on (only 32a is formed). Further, by filling the second through hole with the electrode material by the same manufacturing process as in FIG. 5D, the second interconductor path electrodes 32a and b are formed.

After that, the second lower electrode 31b is formed by the same process as in FIG. 5 (e), and the second base separation groove 48 is formed by the same process as in FIG. 5 (f) (FIG. 11 (t)). ). As shown in FIG. 5 (f), the shape of the second base separation groove 48 is the same as that of the base separation groove 38 in which the gap portion is provided above the second connection electrode 33, and the third base separation groove 48 is formed. It is formed by opening the upper part of the inter-conductor pass electrode (lower portion) 52a.

Then, by the same process as in FIG. 6, the configuration shown in FIG. 11 (u) covered with the second organic film protective layer 35b is formed, and further, by the same process as in FIG. 7, the third conductor-to-conductor pass electrode 52a, The third lower electrode 61 is formed with b.
The third conductor-to-conductor pass electrodes 52a and b are in a state of being formed up to the height of the second organic film protective layer 35b, which is formed in the same manner as the organic film protective layer 25b.

After that, a third organic photoelectric conversion film 50b is formed in the same process as in FIG. 8, and a third upper electrode 54 is further formed to form the element configuration shown in FIG. 12 (w). Can be done. In the above description, a configuration is shown in which a second base layer 37b similar to the base layer 27 shown in FIG. 4 (b) is formed on the upper surface of the organic film protective layer 25 in FIG. 7 (k). Instead of such a configuration, the organic film protective layer 25 shown in FIG. 6 (i) is formed to have a thicker film thickness so that the organic film protective layer 25b and the second base layer 37b are integrated. You may. In this case, the third interconductor pass electrodes 52a and b are formed after the second organic photoelectric conversion film 30b and the second upper electrode 34b are patterned and the thick second organic film protective layer 35b is laminated. Is desirable.
Finally, the third upper electrode 54 is formed on the upper surface of the third organic photoelectric conversion film 50b, and a series of manufacturing processes of the laminated imaging element 1b is completed.
The protective film and other layer configurations formed on the upper part of the third upper electrode 54 can be formed by using the above-mentioned layer forming technique and further, a generally used layer forming technique. ..

<Example 2>
FIG. 13 shows a cross-sectional view of the stacked image sensor 1c according to the second embodiment.
In the following description, with respect to the members similar to those of the first embodiment, the reference numerals given to the members of the first embodiment and the addition of c shall be attached to the corresponding members of the second embodiment. The description substantially overlapping with the first embodiment will be omitted.
As shown in FIG. 13, a configuration in which two lower electrodes (21c, 31c) are symmetrically arranged side by side on the base layer 27c is shown. The second lower electrode 31c located higher is connected to the circuit board 2c via the second inter-conductor path electrode 32c arranged in the region between the adjacent base layers 27c. When the base layer 27c is formed in a striped shape, in a configuration in which the pixel positions of the first layer and the second layer are aligned, as shown in FIG. 13, two rows of pixels (first pixel 41c, first pixel 41c, first It is possible to arrange two pixels 42c) in parallel.

<Example 3>
FIG. 14 shows a cross-sectional view of the stacked image sensor 1d according to the third embodiment.
In the following description, with respect to the members similar to those of the first embodiment, the reference numerals given to the members of the first embodiment plus d are attached to the corresponding members of the third embodiment. The description substantially overlapping with the first embodiment will be omitted.
As shown in FIG. 14, the pixels (first pixel 41d, second pixel 42d, central pixel 43d) arranged in three rows are arranged on the base layer 27d. That is, the configuration is such that the central pixel 43d, which is the third pixel row, is added to the configuration of the second embodiment.

The first lower electrode 21d is each connected to the corresponding first connection electrode 23d by the first inter-conductor path electrode 22d embedded over the entire thickness direction of the base layer 27d. For the second lower electrode 31d, for example, it is effective to use the in-plane wiring electrode 51 as shown in FIG. That is, here, the second lower electrode 31d is formed by the number of pixels, and the second interconductor path electrode 32d of the central pixel 43d is outside the base layer 27d by using the in-plane wiring electrode 51. It is possible to withdraw up to. As a result, all the second lower electrodes 31d can be connected to the circuit board via the second inter-conductor pass electrode 32d formed in the base separation groove 38d.

Similarly, even when the number of pixel rows is increased to 4 or more, by adopting the same configuration as the in-plane wiring electrode 51 shown in FIG. 2, the electrodes are pulled out to the outside of the base layer 27d and all the second lower electrodes 31d are used. , Can be connected to the readout circuit unit 3d via the second conductor-to-conductor pass electrode 32d.
By coating the upper part of the in-plane wiring electrode 51 with an insulating material, it is possible to prevent photoelectric conversion from occurring above the in-plane wiring electrode 51.

The image pickup device and the method for manufacturing the image sensor of the present invention are not limited to those of the above-described embodiment, and various other aspects can be changed. For example, when the above imaging element is applied to a color image imaging element, it may have a configuration in which two organic photoelectric conversion films and one CMOS image sensor are laminated, or three organic photoelectric conversion films are laminated. It may be the one having the above-mentioned configuration, and any of them may be assigned for each color light of RGB. Further, four or more organic photoelectric conversion films may be laminated, and two or more organic photoelectric conversion films may be assigned for G light, and one organic photoelectric conversion film may be assigned for R light and one for B light. .. It is also possible to apply a material having sensitivity to a region other than visible light to the photoelectric conversion film.

It is also possible to have a hybrid device configuration in which the organic photoelectric conversion film is used as the lower layer and the uppermost layer on the light incident side is an inorganic photoelectric conversion film.
Further, only one layer of the organic photoelectric conversion film may be used, and the upper electrode may be electrically connected to the readout circuit portion by using the above-described second-conductor pass electrode type electrode.

1, 1a to d Stacked image pickup element 2, 2a to d Circuit board 3, 3a to d Read circuit unit 4, 4a to d Photoelectric conversion unit 6 Film formation area 10, 10a to d CMOS image sensor 20, 20a to d 1 Organic photoelectric conversion film 20'First organic photoelectric conversion film residue 21, 21c, 21d First lower electrode 22, 22c, 22d First inter-conductor path electrode 23, 23a to d First connection electrode 24, 24c, 24d First Upper electrode 24'First upper electrode residue 25, 25a to d First organic film protective layer 27, 27c, 27d Base layer 30, 30a to d Second organic photoelectric conversion film 31, 31a to d Second lower electrode 32, 32a ~ D Second inter-conductor path electrodes 33, 33a ~ d Second connection electrodes 34, 34a ~ d Second upper electrodes 35a, 35b Second organic film protective layer 36, 36c, 36d Insulation film 37, 37a, 37b Second Base layer 38, 38c, 38d Base separation groove 41, 41c, 42c, 41d, 42d, 43d Pixel 48 Second base separation groove 50, 50b Third organic photoelectric conversion film 51 In-plane wiring electrode 52a, 52b Between third conductors Pass electrode 53a, 53b 3rd connection electrode 54 3rd upper electrode 61 3rd lower electrode 62 Electrode extraction part 63 Upper connection electrode 72 Upper inter-conductor pass electrode 122 1st through hole 132 2nd through hole 222 1st inter-conductor pass electrode Connection with 232 Connection with pass electrode between second conductors

Claims (7)

An image sensor provided with an organic photoelectric conversion film above the circuit board so that light from above can be received.
A base layer formed in an island shape or a stripe shape on the circuit board,
A first lower electrode that is laminated on the upper part of the base layer and conducts with a readout circuit portion including the circuit board.
A first organic photoelectric conversion film among the organic photoelectric conversion films, which is laminated on the first lower electrode and separated according to the base layers separated from each other.
An upper electrode formed on the upper part of the first organic photoelectric conversion film and
A protective layer covering the upper part of the upper electrode and the base layers separated from each other,
A second lower electrode formed on the upper part of the protective layer and
An image pickup comprising a conductor-to-conductor path electrode that passes through the protective layer without passing through the first organic photoelectric conversion film and electrically connects the second lower electrode and the readout circuit portion. element. The image pickup device according to claim 1, wherein the interconductor path electrode has a side surface covered with an insulating film. An image sensor provided with an organic photoelectric conversion film above the circuit board so that light from above can be received.
A base layer formed in an island shape or a stripe shape on the circuit board,
A first lower electrode that is laminated on the upper part of the base layer and conducts with a readout circuit portion including the circuit board.
A first conductor-to-conductor path electrode that passes through the base layer and electrically connects the first lower electrode and the readout circuit portion.
A first organic photoelectric conversion film among the organic photoelectric conversion films, which is laminated on the first lower electrode and separated according to the base layers separated from each other.
An upper electrode formed on the upper part of the first organic photoelectric conversion film and
A protective layer covering the upper part of the upper electrode and the base layers separated from each other,
A second lower electrode formed on the upper part of the protective layer and
It is characterized in that it is provided with a second interconductor pass electrode that electrically connects the second lower electrode and the readout circuit portion by passing through the protective layer without passing through the first organic photoelectric conversion film. Image sensor. The image pickup device according to claim 3, wherein the side surface of the second interconductor pass electrode is covered with an insulating film. The image pickup device according to any one of claims 1 to 4, wherein the film thickness of the base layer is larger than the total film thickness of the organic photoelectric conversion film and the upper electrode laminated. The image pickup device according to any one of claims 1 to 5, wherein a CMOS image sensor is mounted on the light incident side of the circuit board. This is a method for manufacturing an image sensor arranged above a circuit board so that light from above is incident on an organic photoelectric conversion film.
An island-shaped or striped base layer is formed on the circuit board.
A first lower electrode that conducts with the readout circuit portion including the circuit board is laminated on the upper part of the base layer.
A first organic photoelectric conversion film among the organic photoelectric conversion films separated according to the base layers separated from each other is laminated on the first lower electrode.
An upper electrode is laminated on the upper part of the first organic photoelectric conversion film.
After that, the upper part of the upper electrode and the base layers separated from each other are covered with a protective layer.
A second lower electrode is formed on the upper part of the protective layer.
Manufacture of an image pickup device, characterized in that the interconductor path electrode that electrically connects the second lower electrode and the readout circuit portion is passed through the protective layer without passing through the first organic photoelectric conversion film. Method.

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