JP2020198367A - Substrate processing system and substrate processing method - Google Patents

Abstract

To appropriately perform pretreatment for bonding a substrate.SOLUTION: The present invention provides a substrate processing method that processes a substrate, wherein a surface film is formed on the substrate, wherein the substrate processing method includes forming a processed region on an outer peripheral portion of the surface film, the processed region including a modified surface in which the surface of the surface film is modified, and a non-modified surface in which the surface of the surface film is not modified. Alternatively, the present invention provides a substrate processing system that processes a substrate, wherein a surface film is formed on the substrate, wherein the substrate processing system includes a surface film processing device which forms a processed region on the outer peripheral portion of the surface film, and the processed region includes a modified surface in which the surface of the surface film is modified by the surface film processing device, and a non-modified surface in which the surface of the surface film is not modified.SELECTED DRAWING: Figure 10

Description

The present disclosure relates to a substrate processing system and a substrate processing method.

In Patent Document 1, a disc-shaped grinding tool provided with abrasive grains on the outer peripheral portion is rotated, and at least the outer peripheral surface of the grinding tool is linearly contacted with the semiconductor wafer to omit the peripheral end portion of the semiconductor wafer. It is disclosed to grind in an L shape. A semiconductor wafer is manufactured by laminating two silicon wafers.

Japanese Unexamined Patent Publication No. 9-216152

The technique according to the present disclosure appropriately preprocesses the bonding of substrates.

One aspect of the present disclosure is a substrate processing method for processing a substrate, which comprises forming a surface film on the substrate and forming a processed region on the outer peripheral portion of the surface film, wherein the processed region is the said. It includes a modified surface in which the surface of the surface film is modified and a non-modified surface in which the surface of the surface film is not modified.

According to the present disclosure, the pretreatment for bonding the substrates can be appropriately performed.

It is a side view which shows the outline of the structural example of a polymerization wafer. It is a top view which shows an example of the polymerization wafer which performs the laser trimming process. It is explanatory drawing explaining the scattering of the particle in the pre-processing. It is a top view which shows the outline of the structural example of the processing system which concerns on this embodiment. It is a side view which shows the outline of the structural example of the pretreatment apparatus. It is explanatory drawing which shows the state of the pretreatment schematically. It is explanatory drawing which shows the state of edge trim schematically. It is a top view which shows an example of a processing area. It is an enlarged view which shows an example of a modification pattern. It is an enlarged view which shows an example of a modification pattern. It is an enlarged view which shows an example of a modification pattern. It is an enlarged view which shows an example of a modification pattern. It is explanatory drawing which shows an example of the preprocessing schematically. It is a top view which shows the outline of the structural example of the processing system which concerns on 2nd Embodiment. It is a vertical cross-sectional view which shows the outline of the structural example of the protective film forming apparatus. It is sectional drawing which shows the outline of the structural example of the protective film forming apparatus. It is explanatory drawing which shows the state of the protective film formation schematically. It is explanatory drawing which shows an example of the formed protective film. It is explanatory drawing which shows typically an example of cleaning of a processing wafer. It is a vertical cross-sectional view which shows the outline of another configuration example of the protective film forming apparatus. It is explanatory drawing which shows the state of removal of the protective film in the protective film forming apparatus. It is a top view which shows the outline of the structural example of the processing system which concerns on 2nd Embodiment. It is a side view which shows the outline of the structural example of the liquid processing apparatus. It is explanatory drawing which shows the state of the wet etching in the liquid processing apparatus.

In the process of manufacturing a semiconductor device, the back surface of a wafer in which devices such as a plurality of electronic circuits are formed on the front surface is ground to thin the wafer. If the thinned wafer is directly conveyed or subsequently processed, warpage or cracking may occur. Therefore, in order to suppress the occurrence of warpage and cracking, for example, the wafer is reinforced by attaching it to the support wafer.

FIG. 1 is a side view showing an outline of the configuration of a polymerized wafer T formed by laminating a processed wafer W as a substrate and a supporting wafer S as another substrate. Hereinafter, in the processed wafer W, the surface to be joined to the support wafer S is referred to as a front surface Wa, and the surface opposite to the front surface Wa is referred to as a back surface Wb. Similarly, in the support wafer S, the surface bonded to the processed wafer W is referred to as a front surface Sa, and the surface opposite to the front surface Sa is referred to as a back surface Sb.

The processed wafer W is a semiconductor wafer such as a silicon wafer, and a device layer (not shown) including a device such as a plurality of electronic circuits is formed on the surface Wa. Further, an oxide film Fw, for example, a SiO ₂ film (TEOS film) is further formed on the device layer.

The support wafer S is a wafer that supports the processed wafer W. An oxide film Fs, for example, a SiO ₂ film (TEOS film) is formed on the surface Sa of the support wafer S. Further, the support wafer S functions as a protective material for protecting the device layer on the surface of the processing wafer W. When a plurality of devices are formed on the surface Sa of the support wafer S, a device layer (not shown) is formed on the surface Sa as in the processing wafer W.

Normally, as shown in FIG. 1A, the outer end portion of the processed wafer W is chamfered, but when the back surface Wb of the processed wafer W is ground as described above, the outer end portion of the processed wafer W is subjected to a grinding process. The part has a sharp and pointed shape (so-called knife edge shape). Then, chipping occurs at the outer end portion of the processed wafer W, and the processed wafer W may be damaged. Therefore, as shown in FIG. 1B, so-called edge trimming is performed in which the peripheral edge portion We of the processed wafer W is removed in advance before the grinding process. The peripheral edge portion We removed by the edge trim is, for example, in the range of 1 mm to 5 mm in the radial direction from the outer end portion of the processed wafer W.

The end face grinding apparatus described in Patent Document 1 described above is an apparatus for performing this edge trimming. However, in this end face grinding apparatus, since the edge trim is performed by grinding, a large amount of dust (hereinafter referred to as "particles") is generated during the grinding process. Then, if such particles are scattered inside the apparatus, the wafer may be contaminated.

Therefore, as shown in FIG. 2, the present inventors form the internal modified layer M by condensing the laser beam at the boundary between the peripheral portion We and the central portion Wc as the removal target by the edge trim. The peripheral portion We was peeled off along the internal modified layer M (laser trimming process).

According to such a laser trimming process, the peripheral portion We can be removed without grinding as in Patent Document 1, so that the amount of particles generated in the edge trim can be reduced.

Further, in order to normally remove the peripheral portion We of the processed wafer W by the laser trimming process, the bonding strength between the oxide film Fw and the oxide film Fs on the peripheral portion We before joining the processed wafer W and the supporting wafer S. Pretreatment is performed to reduce the amount. The pretreatment is performed, for example, by condensing laser light on the outer peripheral portion of the oxide film Fw formed on the peripheral portion We of the processed wafer W to roughen or remove the surface of the oxide film Fw (hereinafter,). In the above description, the outer peripheral portion of the oxide film Fw to which the pretreatment is performed may be referred to as "processed region Fwe"). Then, in the processed region Fwe formed by such pretreatment, the oxide film Fw and the oxide film Fs are not bonded at the time of bonding, and in the polymerized wafer T, a bonded region and an unbonded region are formed.

Here, when the pretreatment is performed by irradiating the outer peripheral surface of the oxide film Fw with a laser beam as described above, as shown in FIG. 3, a small amount of particles P generated by the irradiation of the laser beam Lr are scattered. May be done. When the particles generated in this way adhere to the surface of the oxide film Fw, voids are generated at the bonding interface between the oxide film Fw and the oxide film Fs due to the adhered particles, and the processed wafer W and the support wafer S are bonded together. Was not performed normally. That is, there is room for improvement in the pretreatment before bonding the wafers.

The technique according to the present disclosure appropriately preprocesses the bonding of substrates. Hereinafter, the method of pretreatment performed using the processing system according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals to omit duplicate description.

First, the configuration of the processing system according to the present embodiment will be described. FIG. 4 is a plan view showing an outline of the configuration of the processing system 1. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the Z-axis positive direction is defined as the vertically upward direction.

As shown in FIG. 4, the processing system 1 includes, for example, a loading / unloading station 2 in which cassettes Cw, Cs, and Ct capable of accommodating a plurality of processing wafers W, support wafers S, and polymerization wafers T are carried in / out from the outside. , The processing wafer W, the support wafer S, and the polymerization wafer T are integrally connected to a processing station 3 provided with various processing devices for performing desired processing.

The loading / unloading station 2 is provided with a cassette mounting table 10. In the illustrated example, a plurality of, for example, four cassette mounting plates 11 are arranged side by side in a row in the Y-axis direction on the cassette mounting table 10. Cassettes Cw, Cs, and Ct can be placed on these cassette mounting plates 11 when the cassettes Cw, Cs, and Ct are carried in and out of the processing system 1. As described above, the loading / unloading station 2 is configured to be able to hold a plurality of processing wafers W, support wafers S, and polymerization wafers T. The number of cassette mounting plates 11 is not limited to this embodiment and can be set arbitrarily. Further, in addition to the cassettes Cw, Cs, and Ct, a cassette for collecting a defective wafer, for example, may be mounted on the cassette mounting plate 11.

The loading / unloading station 2 is provided with a wafer transfer device 20 adjacent to the cassette mounting table 10 on the X-axis positive direction side of the cassette mounting table 10. The wafer transfer device 20 is configured to be movable on a transfer path 21 extending in the Y-axis direction. Further, the wafer transfer device 20 has a transfer arm 22 that holds and transfers the processed wafer W, the support wafer S, and the polymerized wafer T. The transport arm 22 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. The configuration of the transport arm 22 is not limited to this embodiment, and any configuration can be adopted. The wafer transfer device 20 is configured to be able to transfer the processed wafer W, the support wafer S, and the polymerized wafer T to the cassettes Cw, Cs, Ct of the cassette mounting table 10 and the transition device 50 described later.

The processing station 3 is provided with, for example, three processing blocks G1 to G3. For example, the first processing block G1 is provided on the front side of the processing station 3 (the negative direction side of the Y axis in FIG. 4), and the rear side of the processing station 3 (the positive direction side of the Y axis in FIG. 4) The processing block G2 of 2 is provided. A third processing block G3 is provided on the loading / unloading station 2 side (X-axis negative direction side in FIG. 4) of the processing station 3.

A pretreatment device 30 as a surface film processing device is arranged in the first treatment block G1. A joining device 40 is arranged in the second processing block G2.

The number and arrangement of the pretreatment device 30 and the joining device 40 are not limited to this. For example, the pretreatment device 30 and the joining device 40 may be arranged in the same processing block. Further, they may be arranged in a laminated manner.

The pretreatment apparatus 30 irradiates the outer peripheral portion of the oxide film Fw with a laser beam to form a modified pattern on the surface of the oxide film Fw to form a processed region Fwe. As shown in FIG. 5, the pretreatment apparatus 30 is a chuck that holds the processing wafer W in a state where the front surface Wa (the surface on which the oxide film Fw is formed) of the processing wafer W is on the upper side and the back surface Wb is arranged on the lower side. Has 31. The chuck 31 is configured to be movable in the X-axis direction and the Y-axis direction by the moving mechanism 32. The moving mechanism 32 is composed of a general precision XY stage. Further, the chuck 31 is configured to be rotatable around a vertical axis by a rotation mechanism 33.

Above the chuck 31, a laser irradiation unit 34 that irradiates the surface of the oxide film Fw in the processing region Fwe with the laser light Lr is provided. The laser irradiation unit 34 collects high-frequency pulsed laser light Lr oscillated from a laser light oscillator (not shown), for example, infrared light, at a desired position in the processing region Fwe. The laser irradiation unit 34 may be configured to be movable in the X-axis direction and the Y-axis direction by the moving mechanism 35. The moving mechanism 35 is composed of a general precision XY stage. Further, the laser irradiation unit 34 may be configured to be movable in the Z-axis direction by the elevating mechanism 36.

The laser beam Lr may be a CW laser, and the wavelength can be arbitrarily selected. Further, according to the above configuration, the focusing position of the laser beam Lr with respect to the processing region Fwe is adjusted by the horizontal movement of the chuck 31 and the laser irradiation unit 34 in addition to the rotation of the chuck 31, but instead of such horizontal movement, Adjustment may be performed by arranging a galvano mirror and changing the mirror angle.

In this pretreatment, as shown in FIG. 3, particles P are generated by condensing the laser beam, and the generated particles P are scattered inside the pretreatment device 30.

The joining device 40 joins the oxide film Fw of the processing wafer W and the oxide film Fs of the support wafer S. In the joining device 40, the oxide film Fw and the oxide film Fs are each activated and hydrophilized prior to the joining. Then, the hydrophilized oxide film Fw and the oxide film Fs start bonding by hydrogen bonding when the central portion of the processed wafer W and the central portion of the support wafer S are brought into contact with each other, and a so-called bonding wave is generated. Then, when the bonding wave starts diffusing from the central portion of the oxide films Fw and Fs and reaches the peripheral portion, the entire surface of the oxide films Fw and Fs is bonded by hydrogen bonds. Further, the bonded polymerized wafer T is annealed to remove water from the oxide film Fw and the oxide film Fs to secure the bonding strength. In the processed region Fwe that has been pretreated in the pretreatment apparatus 30, the oxide film Fw and the oxide film Fs are not bonded, and an unbonded region is formed.

The third processing block G3 is provided with a transition device 50 for delivering the processing wafer W, the support wafer S, and the polymerization wafer T. The number and arrangement of the transition devices 50 are not limited to this. For example, the transition device 50 may be provided in multiple stages.

As shown in FIG. 4, a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a wafer transfer device 61 is arranged in the wafer transfer area 60.

The wafer transfer device 61 has, for example, a transfer arm 62 that can move in the vertical direction, the horizontal direction (X-axis direction, Y-axis direction), and around the vertical axis. The transfer arm 62 holds the vicinity of the end portion (near the peripheral edge portion We) of the back surface Wb of the processed wafer W from below.

The wafer transfer device 61 moves in the wafer transfer area 60, and the processing wafer W is attached to an arbitrary device of the first processing block G1, the device of the second processing block G2, and the device of the third processing block G3. , Support wafer S and polymerization wafer T can be conveyed.

A control device 70 is provided in the above processing system 1. The control device 70 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program that controls wafer processing in the processing system 1. Further, the program storage unit also stores a program for controlling the operation of the drive system of the above-mentioned various processing devices and transfer devices to realize the wafer processing described later in the processing system 1. The program may be recorded on a computer-readable storage medium H and may be installed on the control device 70 from the storage medium H.

Next, wafer processing as a processing method performed by using the processing system 1 configured as described above will be described.

First, the cassette Cw containing the plurality of processing wafers W, the cassette Cs containing the plurality of support wafers S, and the empty cassette Ct are placed on the cassette mounting table 10 of the loading / unloading station 2.

Next, the processing wafer W in the cassette Cw is taken out by the wafer transfer device 20 and transferred to the transition device 50 of the processing station 3. Subsequently, the processing wafer W of the transition device 50 is taken out by the wafer transfer device 61 and transferred to the pretreatment device 30 of the first processing block G1.

In the pretreatment apparatus 30, as shown in FIG. 6, the processed region Fwe of the oxide film Fw is irradiated with the laser beam. More specifically, while rotating the chuck 31 (processed wafer W), the laser beam Lr is irradiated to an arbitrary position on the surface of the processing region Fwe. As a result, the portion of the oxide film Fw where the laser light is focused is removed or roughened (hereinafter, "removal" and "roughening" by the laser light are collectively referred to as "modification"). An annular modified surface Fm with a modified pattern is formed. Then, in the processed region Fwe on which the modified surface Fm is formed, the bonding with the support wafer S is not performed in the subsequent bonding apparatus 40, and an unbonded region is formed on the polymerized wafer T. In this pretreatment, particles P are generated as shown in FIG.

The details of the modification pattern of the modified surface Fm formed in the processing region Fwe will be described later.

When the modified surface Fm is formed, the processed wafer W is transferred to the joining device 40 by the wafer transfer device 61. Further, the support wafer S is taken out from the cassette Cs and conveyed to the joining device 40 via the transition device 50.

When a plurality of devices are formed on the surface Sa of the support wafer S, pretreatment may be performed on the support wafer S as well as the processing wafer W.

In the joining device 40, the processed wafer W and the supporting wafer S are held in the holding portion so that the surfaces Wa and Sa on which the oxide films Fw and Fs are formed face each other. Then, in such a state, the oxide films Fw and Fs are brought into contact with each other from the central portion, and the bonding is gradually performed toward the outer peripheral portion to form the polymerized wafer T.

It is preferable that the oxide films Fw and Fs are hydrophilized and modified prior to bonding. Such hydrophilization and modification can be performed at any place, and may be performed outside the processing system 1 or inside. Further, it may be performed outside the joining device 40, or it may be performed inside.

Here, since the modified surface Fm is formed in the processed region Fwe as described above, the oxide films Fw and Fs are not bonded, and the bonded region and the unbonded region are formed at the interface between the oxide films Fw and Fs. It is formed. Specifically, a bonded region is formed in the central portion of the oxide film Fw in which the modified surface Fm is not formed, and an unbonded region is formed in the processed region Fwe in which the modified surface Fm is formed.

Next, the formed polymerized wafer T is transferred to the transition device 50 by the wafer transfer device 61. Then, the polymerized wafer T conveyed to the transition device 50 is conveyed to the cassette Ct by the wafer transfer device 20, and a series of wafer processing in the processing system 1 is completed.

The polymerized wafer T carried out from the processing system 1 is transported to a device for performing edge trimming (not shown), for example, a peripheral edge removing device. Then, as shown in FIG. 2, after the internal modified layer M is formed along the boundary between the bonded region and the unbonded region, the peripheral edge We is removed along the internally modified layer M (edge). trim). At the time of such edge trimming, since the unbonded region is formed on the outer peripheral portion of the oxide film Fw as described above, the peripheral edge portion We can be appropriately removed.

In such edge trimming, the peripheral edge portion We as a removal target may be performed together with the thinning of the processed wafer W. Specifically, in the peripheral edge removing device, as shown in FIG. 7A, an internal surface modification layer M1 is formed in addition to the internal modification layer M. Then, as shown in FIG. 7B, the processed wafer W is separated into the first separation wafer W1 and the second separation wafer W2 with the internal modification layer M and the internal surface modification layer M1 as base points. At this time, the peripheral edge portion We is attached to the second separation wafer W2 and integrated, and the peripheral edge portion We is removed from the first separation wafer W1.

Next, the details of the modification pattern of the modified surface Fm formed in the above-mentioned pretreatment apparatus 30 will be described.

As described above, in the pretreatment apparatus 30, the processed region Fwe is formed by forming the modified surface Fm. Then, in forming the modified surface Fm, particles P are generated by irradiating the oxide film Fw with a laser beam. When the generated particles P adhere to the surface of the oxide film Fw, the adhered particles may not normally bond the oxide film Fw and the oxide film Fs, and voids may be generated at the bonding interface.

Therefore, the present inventors have decided to reduce the amount of particles generated in the pretreatment by controlling the area ratio of the modified surface Fm in the processing region Fwe in order to suppress defects in bonding caused by such particles. investigated. Specifically, the amount of generated particles was reduced by reducing the area of the modified surface Fm formed in the processing region Fwe.

8 and 9 are a plan view schematically showing an example of a method for forming a processing region Fwe according to the present embodiment, and an enlarged view of a main part of FIG. In the following description, in order to clarify the positional relationship, the X-axis direction and the Y-axis direction are defined, the X-axis direction is the radial direction of the processing wafer W, and the Y-axis direction is the circumferential direction of the processing wafer W. .. Further, the positive direction of the X-axis is the outer peripheral side of the processing wafer W of the processing region Fwe, and the negative direction of the X-axis is the inner peripheral side of the processing wafer W of the processing region Fwe.

In the pretreatment according to the present embodiment, as shown in FIGS. 8 and 9, a plurality of, for example, five annular regions R1 to R5 according to the illustrated example are formed in the processing region Fwe. The radial width of the annular regions R1 to R5 can be arbitrarily determined. That is, the radial widths of the annular regions R1 to R5 do not have to be the same.

As shown in FIG. 9, the annular regions R1 to R5 are formed including the modified surface Fm and the non-modified surface Fm1 not irradiated with the laser beam, respectively. Specifically, in each of the annular regions R1 to R5, the modified surface Fm and the non-modified surface Fm1 are alternately formed along the circumferential direction (Y-axis direction).

The formation interval of the modified surface Fm in the circumferential direction is arbitrarily determined by controlling the rotation speed of the chuck 31 holding the processed wafer and the frequency of the laser beam irradiating the modified surface Fm. Can be done.

Furthermore, the modified surface Fm is alternately formed along the radial direction (X-axis direction) of the processed wafer W. As shown in FIG. 9, the modified surface Fm according to the present embodiment is formed so as to be arranged in a houndstooth pattern along the circumferential direction in the processing region Fwe.

The processing region Fwe formed by the pretreatment apparatus 30 according to the present embodiment is formed so as to include each of the modified surface Fm and the non-modified surface Fm1. That is, the processed region Fwe has a non-modified surface Fm1 whose entire surface is not irradiated with laser light and whose entire surface is not modified (roughened). As a result, the amount of particles generated in the pretreatment is reduced as compared with the case where the modified surface Fm is formed on the entire surface of the processed region Fw, and thus it is possible to suppress the adhesion of particles to the oxide film Fw.

Further, according to the method for forming the modified surface Fm as described above, it is possible to suppress the generation of edge voids in the polymerized wafer T formed in the bonding apparatus 40.

Specifically, as described above, in the bonding between the processed wafer W and the supporting wafer S, the bonding proceeds due to the diffusion of the bonding wave. At the end of the bonding wave, the air between the processing wafer W and the support wafer S is compressed to a high pressure. Further, in the processed region Fwe where the modified surface Fm is formed, the pressure is rapidly reduced by releasing the atmosphere compressed at the end of the bonding wave and becoming high pressure, and the Joule-Thomson effect is generated to lower the temperature. However, dew condensation occurs. After that, when the annealing treatment is performed, the water existing at the interface evaporates, and an annular edge void may be generated at the peripheral edge of the polymerized wafer T.

Here, according to the method for forming the modified surface Fm as described above, the ratio of the formed area of the modified surface Fm to the processed region Fwe is reduced, so that the volume at which the high-pressure atmosphere is released is reduced. As a result, it is possible to suppress the occurrence of a sudden pressure change. Then, by suppressing the occurrence of a sudden pressure change in this way, the occurrence of dew condensation can be suppressed, and as a result, the occurrence of edge voids can be suppressed.

According to the above embodiment, the modified surface Fm has the modified surface Fm and the non-modified surface Fm1 alternately formed in each of the annular regions R1 to R5, and the modified surface Fm has a houndstooth arrangement. A modified pattern was formed in the processing region Fwe so as to be, but the modified pattern formed is not limited to this.

For example, as shown in FIG. 10, at least one of the annular regions R1 to R5 may be formed only by the modified surface Fm.

Even in such a case, since the non-modified surface Fm is formed in at least a part of the processed region Fwe, the amount of particles generated is compared with the case where the entire surface of the processed region Fwe is formed by the modified surface Fm. Can be reduced. That is, it is possible to appropriately suppress the adhesion of particles to the oxide film Fw.

Further, for example, as shown in FIG. 11, at least one of the annular regions R1 to R5 may be formed only by the non-modified surface Fm1. For example, as shown in the illustrated example, the annular region formed only by the modified surface Fm and the annular region formed only by the non-modified surface Fm1 may be alternately arranged.

Further, as a matter of course, the processing region Fwe may be formed by combining the modification patterns shown in FIGS. 8 to 11. Furthermore, it is not necessary to form an annular region in the processed region Fwe as described above, and the modified surface Fm and the non-modified surface Fm1 can be arranged in any configuration.

The annular region (annular region R1 in the illustrated example) located on the innermost peripheral side of the processed region Fwe is preferably formed only by the modified surface Fm as shown in FIG.

In the edge trim performed after the formation of the polymerized wafer T, the laser beam is focused inside the processed wafer W along the inner circumference of the peripheral edge We as the removal target, that is, the boundary between the bonded region and the unbonded region. Then, the internally modified layer M shown in FIG. 2 is formed. The formation position of the internally modified layer M preferably coincides with the boundary between the bonded region and the unbonded region, that is, the inner circumference of the annular region R1 located on the innermost peripheral side of the processed region Fwe, but from the boundary. May be formed inward in the radial direction.

In forming the internal modified layer M, the irradiation position of the laser beam is determined by detecting the boundary between the bonded region and the unbonded region with an alignment camera (not shown). Here, when the modified surface Fm and the non-modified surface Fm1 are alternately formed in the annular region R1 as shown in FIG. 8, the boundary as the alignment position is not uniform in the circumferential direction, and the alignment is performed. Boundary detection by the camera may not be performed properly. On the other hand, as shown in FIG. 12, when the annular region R1 is formed only by the modified surface Fm, the boundary can be uniformly detected in the circumferential direction, and the irradiation position of the laser beam can be appropriately set. Can be decided.

From this point of view, it is preferable that the annular region located on the innermost peripheral side of the processed region Fwe is formed only by the modified surface Fm.

According to the above modification pattern, each of the modified surface Fm and the non-modified surface Fm1 was formed in the processed region Fwe, but for example, when the width in the radial direction of the processed region Fwe is small, the modified surface Fm is not modified. The processed region Fwe may be formed only by the modified surface Fm without including the quality surface Fm1.

In addition, in order to more appropriately suppress the particles generated by the irradiation of the laser beam from adhering to the oxide film Fw, the pretreatment apparatus 30 further provides a fluid nozzle for scattering the particles outward in the radial direction of the processing wafer W. You may have.

Specifically, the pretreatment device 30 may be provided with a fluid nozzle 37 for diffusing the particles P, for example, as shown in FIG. 13A. The fluid nozzle 37 is provided above the peripheral edge We of the processing wafer W, for example. Further, for example, pure water, gas, or the like is supplied from the fluid nozzle 37, and the generated particles P can be diffused outward in the radial direction. As a result, it is possible to prevent the generated particles P from scattering inward in the radial direction of the processed wafer W and adhering to the surface of the oxide film Fw. The fluid nozzle 37 may be further provided, for example, above the center of the processing wafer W or on the back surface Wb side of the processing wafer W in order to more reliably disperse the generated particles P outward in the radial direction. ..

Further, the configuration of the pretreatment device 30 may be any configuration as long as the generated particles P can be scattered in the outer peripheral direction, and is not limited to the configuration described above. For example, as shown in FIG. 13 (b), the inside of the processed wafer W in the radial direction has a positive pressure (“+” in FIG. 13 (b)), and the outside has a negative pressure (“−” in FIG. 13 (b)). The pressure inside the pretreatment device 30 may be controlled as described above. As a result, in the pretreatment apparatus 30, an air flow is formed from the inside to the outside in the radial direction of the processing wafer W, and the generated particles P can be appropriately scattered in the outer peripheral direction. In such a case, by providing a suction mechanism 38 connected to, for example, a vacuum pump, on the radial outside of the end portion of the processing wafer W, it is possible to more appropriately form an air flow from the radial inside to the outside. it can.

In the pretreatment in the above embodiments, the modified surface Fm is formed by irradiating the surface of the oxide film Fw with a laser beam in the pretreatment apparatus, but the modification method of the processed region Fwe is limited to this. I can't. For example, in the pretreatment apparatus, the modified surface Fm may be formed by wet etching by applying an etching solution to the outer peripheral portion of the oxide film Fw. In such a case, it is preferable that a mask for forming a modified pattern is formed on the surface of the modified surface Fm.

In the processing system, a protective film may be formed on the surface of the oxide film Fw in order to prevent particles generated by irradiation with laser light from adhering to the oxide film Fw.

FIG. 14 is a plan view showing an outline of the configuration of the processing system 100 according to the second embodiment. In the present embodiment, the elements having substantially the same functional configuration as the processing system 1 according to the first embodiment are designated by the same reference numerals to omit duplicate description.

As shown in FIG. 14, a protective film forming device 110 and a pretreatment device 30 are arranged in the first processing block G1 of the processing station 3 according to the present embodiment. The protective film forming device 110 and the pretreatment device 30 are arranged side by side in this order from the X-axis negative direction side (carry-in / out station 2 side).

The protective film forming apparatus 110 supplies the protective film material to the processed wafer W before the pretreatment, and forms the protective film Wp on the surface of the oxide film Fw. As the protective film material, for example, a water-soluble material is selected. The detailed configuration of the protective film forming apparatus 110 will be described later.

As shown in FIG. 14, a cleaning device 120 and a joining device 40 are arranged in the second processing block G2 of the processing station 3 according to the present embodiment. The cleaning device 120 and the joining device 40 are arranged side by side in this order from the X-axis negative direction side (carry-in / out station 2 side).

The cleaning device 120 cleans the processed wafer W that has been pretreated in the pretreatment device 30. Specifically, by removing the protective film Wp formed in the protective film forming apparatus 110, the particles P adhering to the surface of the protective film Wp in the pretreatment apparatus 30 are washed away together with the protective film Wp. Here, as the cleaning liquid supplied to the processing wafer W in the cleaning apparatus 120, a cleaning liquid capable of removing the protective film Wp, for example, pure water is selected according to the present embodiment.

The number and arrangement of the pretreatment device 30, the joining device 40, the protective film forming device 110, and the cleaning device 120 are not limited to this.

Next, the configuration of the protective film forming apparatus 110 described above will be described. 15 and 16 are a vertical sectional view and a horizontal sectional view showing an outline of the configuration of the protective film forming apparatus 110, respectively.

As shown in FIG. 15, the protective film forming apparatus 110 has a processing container 150 whose inside can be closed. As shown in FIG. 16, a carry-in outlet 151 for the processing wafer W is formed on the side surface of the processing container 150, and an opening / closing shutter 152 is provided at the carry-in outlet 151.

As shown in FIG. 15, a spin chuck 160 for holding and rotating the processing wafer W is provided at the center of the processing container 150. The spin chuck 160 has a horizontal upper surface, and the upper surface is provided with, for example, a suction port (not shown) for sucking the processed wafer W. By suction from this suction port, the processed wafer W can be sucked and held on the spin chuck 160.

Below the spin chuck 160, a chuck drive unit 161 provided with, for example, a motor is provided. The spin chuck 160 can be rotated to an arbitrary speed by the chuck drive unit 161. Further, the chuck drive unit 161 is provided with a lifting drive source such as a cylinder, and the spin chuck 160 can be raised and lowered.

Around the spin chuck 160, a cup 162 that receives and collects the protective liquid scattered or dropped from the processing wafer W is provided. An exhaust pipe 163 for discharging the collected liquid and an exhaust pipe 164 for exhausting the atmosphere inside the cup 162 are connected to the lower surface of the cup 162.

As shown in FIG. 16, a rail 170 extending along the Y direction (left-right direction in FIG. 16) is formed on the X-direction negative direction (downward direction in FIG. 16) of the cup 162. The rail 170 is formed, for example, from the outside of the cup 162 on the negative direction (left side in FIG. 16) side to the outside on the positive direction (right direction in FIG. 16) side of the cup 162. For example, two arms 171 and 172 are attached to the rail 170.

As shown in FIGS. 15 and 16, the first arm 171 supports a protective film material nozzle 180 that supplies a protective film material to the oxide film Fw formed on the processing wafer W. The first arm 171 is movable on the rail 170 by the nozzle drive unit 181 shown in FIG. As a result, the protective film material nozzle 180 can be moved from the standby portion 182 installed on the outside of the cup 162 on the positive side in the Y direction to above the center of the processing wafer W in the cup 162, and further, the processing wafer W can be moved. It can move on the surface in the radial direction of the processed wafer W. Further, the first arm 171 can be raised and lowered by the nozzle driving unit 181, and the height of the protective film material nozzle 180 can be adjusted.

As shown in FIG. 15, a supply pipe 183 for supplying the protective film material to the protective film material nozzle 180 is connected to the protective film material nozzle 180. The supply pipe 183 communicates with the protective film material supply source 184 that stores the protective film material inside. Further, the supply pipe 183 is provided with a supply equipment group 185 including a valve for controlling the flow of the protective film material, a flow rate adjusting unit, and the like.

As shown in FIGS. 15 and 16, the second arm 172 supports a solvent for removing the protective film material, for example, a solvent nozzle 190 as an outer peripheral removing portion for supplying pure water. The second arm 172 is movable on the rail 170 by the nozzle drive unit 191 shown in FIG. 16, and the solvent nozzle 190 is cupped from the standby unit 192 provided on the outer side of the cup 162 in the negative direction in the Y direction. It can move to the upper part of the center of the processing wafer W in 162, and can move on the surface of the processing wafer W in the radial direction of the processing wafer W. Further, the nozzle driving unit 191 allows the second arm 172 to be raised and lowered, and the height of the solvent nozzle 190 can be adjusted.

As shown in FIG. 15, a supply pipe 193 for supplying a solvent to the solvent nozzle 190 is connected to the solvent nozzle 190. The supply pipe 193 communicates with a solvent supply source 194 that stores a solvent inside. Further, the supply pipe 193 is provided with a supply equipment group 195 including a valve for controlling the flow of the solvent, a flow rate adjusting unit, and the like.

In the present embodiment, the first arm 171 supporting the protective film material nozzle 180 and the second arm 172 supporting the solvent nozzle 190 are attached to the same rail 170, but are attached to different rails. May be. Further, although the protective film material nozzle 180 and the solvent nozzle 190 are supported by separate arms 171 and 122, respectively, they may be supported by the same arm.

Next, wafer processing as a processing method performed by using the processing system 100 configured as described above will be described. In the present embodiment, the duplicate description will be omitted in the process substantially the same as the processing method according to the first embodiment.

In the treatment system 100 according to the present embodiment, the protective film Wp is formed on the surface of the oxide film Fw in the protective film forming apparatus 110 prior to the pretreatment in the pretreatment apparatus 30.

In the protective film forming apparatus 110, as shown in FIG. 17A, the protective film material is spin-coated from the protective film material nozzle 180 on the processed wafer W held on the spin chuck 160, and is applied to the surface of the oxide film Fw. A protective film Wp is formed. As the protective film material, for example, a water-soluble material is selected.

Here, when the protective film material is spin-coated as shown in FIG. 17A, the applied protective film material may wrap around the back surface Wb via the end portion of the processed wafer W. When the protective film material wraps around the back surface of the processed wafer W in this way, as described above, the transport arm 62 of the wafer transfer device 61 wraps around to hold the vicinity of the end portion of the back surface Wb of the processed wafer W. The protective film material may contaminate the transport arm 62.

Therefore, when spin-coating the protective film material in the protective film forming apparatus 110, it is desirable to remove the protective film material that wraps around to the back surface Wb side via the end portion of the processed wafer W by spin coating. Specifically, as shown in FIG. 17B, when the protective film material is spin-coated, the solvent is applied to the outer peripheral portion of the oxide film Fw from the solvent nozzle 190, and in this embodiment, for example, pure water. Supply. As a result, it is possible to prevent the protective film material from wrapping around the back surface Wb of the processed wafer W, and to appropriately form the protective film Wp as shown in FIG. 17 (c).

The forming range of the protective film Wp may coincide with the forming range of the oxide film Fw in a plan view as shown in FIG. 17 (c), but it is larger than the forming range of the oxide film Fw as shown in FIG. May be small. In other words, the outer peripheral portion Wpe of the protective film Wp may be removed by the solvent applied from the solvent nozzle 190 as shown in FIG.

When the protective film Wp is formed, the processed wafer W is transferred to the pretreatment device 30 by the wafer transfer device 61.

In the pretreatment apparatus 30, as shown in the first embodiment, the modified surface Fm is formed by irradiating the surface of the processing region Fwe with a laser beam. In this pretreatment, particles P are generated as shown in FIG. 3, but in the wafer treatment according to the present embodiment, the protective film Wp is formed on the surface of the oxide film Fw. It is possible to appropriately suppress the adhesion of particles P to the oxide film Fw.

When the modified surface Fm is formed, the processed wafer W is transferred to the cleaning device 120 by the wafer transfer device 61.

The cleaning device 120 removes the protective film Wp formed by the protective film forming device 110. The protective film Wp is removed, for example, by spin-coating the protective film Wp with a solvent G for removing the protective film Wp. The solvent is selected according to the material of the protective film Wp formed on the oxide film Fw, and for example, pure water is selected in this embodiment.

Then, when removing the protective film Wp, as shown in FIG. 19, the particles P adhering to the protective film Wp in the above-mentioned pretreatment are removed together with the protective film Wp.

When the protective film Wp is removed, the processed wafer W is transferred to the bonding device 40 by the wafer transfer device 61. Further, the support wafer S is taken out from the cassette Cs and conveyed to the joining device 40 via the transition device 50, and is joined to the supporting wafer S in the joining device 40 to form the polymerization wafer T.

According to the present embodiment, by forming the protective film Wp on the surface of the oxide film Fw, it is possible to suppress the particles generated by the pretreatment from adhering to the oxide film Fw, and the particles adhering together with the protective film Wp can be suppressed. Can be removed. As a result, the generation of voids at the time of joining the processed wafer W and the supporting wafer S can be suppressed, and the joining can be appropriately performed.

Further, in the protective film forming apparatus 110, in order to remove the protective film material that wraps around the back surface Wb from the end portion of the processed wafer W by the solvent applied from the solvent nozzle 190, the wafer transfer apparatus that holds the processed wafer W from below. It is possible to prevent the protective film material from adhering to 61. Since the protective film material does not adhere to the wafer transfer device 61 in this way, it is possible to suppress the occurrence of so-called cross contamination that contaminates the other wafer W to be processed via the wafer transfer device 61.

According to the present embodiment, the solvent nozzle 190 is arranged above the spin chuck 160, and the solvent is supplied from above to the outer peripheral portion of the oxide film Fw, but the arrangement of the solvent nozzle 190 is not limited to this. For example, the solvent nozzle 190 that supplies the solvent in the protective film forming apparatus 110 is arranged below the spin chuck 160, that is, on the back surface Wb side of the processing wafer W held by the spin chuck 160, as shown in FIG. May be good.

Further, the protective film Wp is formed to prevent particles from adhering to the oxide film Fw as described above. Therefore, when the outer peripheral portion Wpe of the protective film Wp is removed as shown in FIG. 18, the radial width of the outer peripheral portion Wpe to be removed is modified by the pretreatment apparatus 30 as shown in FIG. It is desirable that it is smaller than the radial width of the quality surface Fm. That is, it is desirable that the width of the outer peripheral portion Wpe from which the protective film Wp is removed is determined so that particles can be prevented from adhering to the oxide film Fw exposed by removing the outer peripheral portion Wpe.

According to the above embodiment, a water-soluble material was selected as the protective film material, but it suppresses the adhesion of particles generated in the pretreatment to the oxide film Fw and affects the oxide film Fw. Any material can be used as long as it does not give.

Further, as the solvent supplied from the solvent nozzle 190 or the solvent supplied in the cleaning device 120, any solvent can be used depending on the material of the protective film Wp as long as the protective film Wp can be appropriately removed. Solvents such as TMAH and DHF can be selected.

According to the above embodiment, the formation and removal of the protective film prevented the particles generated in the pretreatment from adhering to the oxide film Fw, but the particles adhering to the oxide film Fw were removed by wet etching. , The processing system may be configured.

FIG. 22 is a plan view schematically showing an outline of the configuration of the processing system 200 according to the third embodiment. In the present embodiment, the elements having substantially the same functional configuration as the processing system 1 according to the first embodiment are designated by the same reference numerals to omit duplicate description.

A liquid processing apparatus 210 is arranged in the first processing block G1 of the processing station 3 according to the present embodiment. Further, a cleaning device 120 and a joining device 40 are arranged in the second processing block G2. The number and arrangement of the liquid treatment device 210, the cleaning device 120, and the joining device 40 are not limited to this.

As shown in FIG. 23, the liquid treatment apparatus 210 has a chuck 211 that holds the processing wafer W with the oxide film Fw facing upward. The chuck 211 is configured to be rotatable around a vertical axis by a rotation mechanism 212. Above the chuck 211, a nozzle 220 for applying the etching solution E to the outer peripheral portion of the oxide film Fw is provided. The nozzle 220 communicates with an etching solution supply source (not shown) that stores and supplies the etching solution E. Further, the nozzle 220 is configured to be movable in the X-axis direction, the Y-axis direction and the Z-axis direction by a moving mechanism (not shown).

In the liquid processing apparatus 210, the etching solution E is supplied from the nozzle 220 to the surface of the processed wafer W after the pretreatment is performed. As a result, as shown in FIG. 24, the particles generated by the pretreatment and adhering to the surface of the oxide film Fw are removed by the etching solution E.

Any material can be selected as the etching solution E supplied from the nozzle 220, but it is most desirable to select a material that removes only particles and does not affect the oxide film Fw.

Further, for example, when the etching solution may remove not only the particles but also the oxide film Fw, it is desirable to control the removal of the particles and the oxide film Fw by controlling the supply amount of the etching solution E and the like.

The configuration of the processing system for processing the processing wafer W is not limited to the configuration example shown in the above embodiment, and any configuration can be adopted. For example, the processing system may be further equipped with a peripheral edge removing device or a processing device for performing edge trimming as described above.

It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the appended claims and their gist.

For example, in the above embodiment, the case where the shape of the processed wafer W before and after the processing is a disk shape is described as an example, but the shape of the processed wafer W is not limited to this. For example, the processing wafer W may be square (square).

Fm modified surface Fm1 non-modified surface Fw oxide film Fwe processing area W processed wafer

Claims (16)

It is a substrate processing method that processes a substrate.
A surface film is formed on the substrate,
Including forming a processed region on the outer peripheral portion of the surface film,
The processing area is
A modified surface in which the surface of the surface film is modified, and
A substrate treatment method comprising a non-modified surface in which the surface of the surface film is not modified. The substrate processing method according to claim 1, wherein in the processed region, the modified surface and the non-modified surface are alternately formed in the circumferential direction of the substrate. The substrate processing method according to claim 1 or 2, wherein in the processed region, the modified surface and the non-modified surface are alternately formed in the radial direction of the substrate. The substrate processing method according to claim 3, wherein in the processing region, the modified surfaces are arranged in a houndstooth pattern along the circumferential direction of the substrate. The processing region is divided into a plurality of concentric annular regions.
The substrate processing method according to any one of claims 1 to 4, wherein the annular region located on the innermost peripheral side of the substrate in a plan view is formed only by the modified surface. The substrate processing method according to any one of claims 1 to 5, wherein the modified surface is formed by irradiating the surface of the surface film with a laser. The substrate processing method according to any one of claims 1 to 6, which comprises joining the surface film of the substrate on which the processed region is formed and another surface film formed on another substrate. The substrate processing method according to any one of claims 1 to 7, which comprises removing the peripheral edge portion of the substrate on which the processed region is formed. The peripheral portion
A modified layer is formed inside the substrate by irradiation with laser light.
The substrate processing method according to claim 8, wherein the modified layer is removed by peeling from the base point. A substrate processing system that processes substrates
A surface film is formed on the substrate,
A surface film processing device that forms a processing area on the outer peripheral portion of the surface film,
Including a control device for controlling the operation of the surface film processing device,
The processing area is
A modified surface in which the surface of the surface film is modified by the surface film processing device, and
A substrate treatment system comprising a non-modified surface in which the surface of the surface film is not modified. 10. The control device controls the surface film processing device so as to form the modified surface and the non-modified surface alternately in the circumferential direction of the substrate to form the processed region. The substrate processing system described. 10. The control device controls the surface film processing device so as to form the modified surface and the non-modified surface alternately in the radial direction of the substrate to form the processed region. 11. The substrate processing system according to 11. The substrate processing system according to claim 12, wherein the control device controls the surface film processing apparatus so that the modified surfaces are arranged in a houndstooth pattern along the circumferential direction of the substrate. The processing region is divided into a plurality of concentric annular regions.
One of claims 10 to 13, wherein the control device controls the surface film processing device so that the annular region located on the innermost peripheral side of the substrate in a plan view is formed only by the modified surface. The substrate processing system according to one item. The substrate processing system according to any one of claims 10 to 14, wherein the surface film processing apparatus includes a laser irradiation unit that forms the modified surface by irradiating the surface of the surface film with a laser. The substrate processing system according to any one of claims 10 to 15, further comprising a joining device for joining the surface film of the substrate on which the processed region is formed and another surface film formed on another substrate. ..

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