JP2020196053A - Dovetail groove processing method and substrate treatment device - Google Patents

Abstract

To provide a dovetail processing method and a substrate treatment device that are advantageous to prevent deposition of a reaction product in an introducing hole for insertion of a cutting tool when a dovetail groove for accommodating a sealing member is processed in the substrate treatment device by use of the cutting tool.SOLUTION: A processing method for a dovetail groove 112 for accommodating a sealing member in a sealing surface in which a treatment area inside a substrate treatment device and an outside area thereof are shielded by a sealing member provided on a sealing surface 111 between a first member and a second member forming the substrate treatment device, comprises: a step of processing an introducing hole 113 in the sealing surface; a step of introducing a cutting tool T with a tapering cutting blade whose lower leading-end jutting out, into the introducing hole, and making a cut while moving the cutting tool in a first direction Y1 until the cutting blade comes into contact with an end, on a treatment area side in an opening, of the introducing hole; and a step of processing a dovetail groove along a longitudinal direction of the sealing surface by moving the cutting tool in a second direction Y2 intersecting the first direction.SELECTED DRAWING: Figure 12

Description

The present disclosure relates to a dovetail groove processing method and a substrate processing apparatus.

In Patent Document 1, regarding the dovetail groove for accommodating the seal member, the opening of the dovetail groove is formed to be narrower than the width of the seal member, and a notch having a width wider than the width of the seal member is provided so as to communicate with the opening. The dovetail groove is disclosed. The notch projects inside and outside the dovetail groove formed in an annular shape.

Jikkenhei 3-125952

The present disclosure is advantageous in suppressing the accumulation of reaction products in the introduction hole for inserting the cutting tool when machining the dovetail groove accommodating the seal member in the substrate processing apparatus using the cutting tool. A grooving method and a substrate processing apparatus are provided.

The dovetail grooving method according to one aspect of the present disclosure
In the sealing surface where the internal processing area and the external external area of the substrate processing apparatus are shielded by a sealing member provided on the sealing surface between the first member and the second member forming the substrate processing apparatus. , A method of processing a dovetail groove for accommodating the seal member.
The process of processing the introduction hole on the sealing surface and
A cutting tool having a tapered cutting blade whose lower tip projects outward is inserted into the introduction hole, and the cutting tool is inserted until the cutting blade comes into contact with the end of the introduction hole on the processing region side. The process of cutting while moving in the first direction,
It has a step of moving a cutting tool in a second direction intersecting the first direction to machine the dovetail groove along the longitudinal direction of the sealing surface.

According to the present disclosure, when a dovetail groove accommodating a seal member is machined in a substrate processing apparatus using a cutting tool, it is possible to suppress the accumulation of reaction products in the introduction hole for inserting the cutting tool.

It is sectional drawing which shows an example of the substrate processing apparatus which concerns on embodiment. It is a top view of a part of the lower chamber in the seal structure between the upper chamber and the lower chamber forming a processing container. FIG. 2 is a view taken along the line IIIa-IIIa in FIG. FIG. 2 is a view taken along the line IIIb-IIIb in FIG. It is sectional drawing which shows the other embodiment of the dovetail groove. It is a side view around the opening of the side wall in the seal structure between the opening of the side wall of the processing container and the viewing window, as viewed from the side. FIG. 5 is a view taken along the line VIa-VIa in FIG. FIG. 5 is a view taken along the line VIb-VIb in FIG. It is a process drawing explaining the dovetail groove processing method which concerns on embodiment, and is the top view which explains the process of processing an introduction hole in the seal surface of a lower chamber. It is a view of arrow VIII-VIII of FIG. It is a process drawing explaining the dovetail groove processing method which concerns on embodiment, following FIG. 7 and FIG. Following FIG. 9, it is a process diagram for explaining the dovetail groove processing method according to the embodiment. It is XI-XI arrow view of FIG. It is a process drawing explaining the dovetail groove processing method which concerns on embodiment, following FIG. 9 and FIG.

Hereinafter, the substrate processing apparatus and the dovetail groove processing method according to the embodiment of the present disclosure will be described with reference to the attached drawings. In the present specification and the drawings, substantially the same components may be designated by the same reference numerals to omit duplicate explanations.

[Substrate processing device according to the embodiment]
<Board processing equipment>
First, an example of the substrate processing apparatus according to the embodiment of the present disclosure will be described with reference to FIG. Here, FIG. 1 is a cross-sectional view showing an example of the substrate processing apparatus according to the embodiment.

The substrate processing apparatus 100 shown in FIG. 1 is an inductively coupled plasma (ICP) that executes various substrate processing methods on a rectangular substrate (hereinafter, simply referred to as “substrate”) G for FPD in a plan view. ) It is a processing device. Glass is mainly used as the material of the substrate, and a transparent synthetic resin or the like may be used depending on the application. Here, the substrate treatment includes an etching treatment, a film formation treatment using a CVD (Chemical Vapor Deposition) method, and the like. Examples of the FPD include a liquid crystal display (LCD), electro luminescence (EL), and a plasma display panel (PDP). The substrate includes a support substrate as well as a form in which a circuit is patterned on the surface thereof. Further, the planar dimensions of the FPD substrate have increased with the passage of generations, and the planar dimensions of the substrate G processed by the substrate processing apparatus 100 are, for example, from the dimensions of the 6th generation of about 1500 mm × 1800 mm to the 10th. Includes at least up to a size of about 3000 mm x 3400 mm for the 5th generation. The thickness of the substrate G is about 0.2 mm to several mm.

The substrate processing apparatus 100 shown in FIG. 1 is controlled by a rectangular parallelepiped box-shaped processing container 10 and a substrate mounting table 60 having a rectangular outer shape arranged in the processing container 10 on which the substrate G is placed. It has a part 90 and. The processing container may have a cylindrical box shape or an elliptical tubular box shape. In this form, the substrate mounting table is also circular or elliptical, and the substrate is mounted on the substrate mounting table. Is also circular.

The processing container 10 is divided into two upper and lower spaces by a dielectric plate 11, the antenna chamber which is the upper space is formed by the upper chamber 12, and the processing region S which is the lower space is formed by the lower chamber 13. Here, the outside of the processing container 10 is defined as the outer area E with respect to the processing area S inside the processing container 10. Further, in the present specification, the space between the entire area inside the processing container 10 surrounded by the upper chamber 12 and the lower chamber 13 and the substrate mounting table 60 may be referred to as a “processing area”, and the processing container. In addition to the outside of 10, the space below the board mounting table 60 may be referred to as an “external region”. That is, the outer region is configured to project from the lower part of the lower chamber 13 to the inside of the lower chamber 13. This is because, in the bottom plate 13d of the lower chamber 13, the portion through which the feeder line 71 connected to the board mounting table 60 penetrates can be communicated with the outside air, and in this case, the space below the board mounting table 60 can be an external region.

In the processing container 10, a rectangular annular support frame 14 is arranged so as to project inside the processing container 10 at a position at the boundary between the lower chamber 13 and the upper chamber 12, and a dielectric material is provided on the support frame 14. The plate 11 is placed on it. The processing container 10 is grounded by the ground wire 13e.

The processing container 10 is made of a metal such as aluminum, and the dielectric plate 11 is made of ceramics such as alumina (Al ₂ O ₃ ) or quartz.

On the side wall 13a of the lower chamber 13, a carry-in / out port 13b for carrying in / out the substrate G to / from the lower chamber 13 is provided, and the carry-in / out port 13b can be opened and closed by a gate valve 20. A transport chamber containing a transport mechanism (neither is shown) is adjacent to the lower chamber 13, and the gate valve 20 is controlled to open and close, and the transport mechanism carries in and out the substrate G via the carry-in / out port 13b. Will be.

Further, a plurality of openings 13c are formed at intervals on the side wall 13a of the lower chamber 13, and a quartz viewing window 25 is provided on the outer region E side of each opening 13c so as to close the opening 13c. Is installed.

Further, a plurality of exhaust ports 13f are opened in the bottom plate 13d of the lower chamber 13, a gas exhaust pipe 51 is connected to the exhaust port 13f, and the gas exhaust pipe 51 is connected to the exhaust device 53 via the on-off valve 52. It is connected. The gas exhaust section 50 is formed by the gas exhaust pipe 51, the on-off valve 52, and the exhaust device 53. The exhaust device 53 has a vacuum pump such as a turbo molecular pump, and can evacuate the inside of the chamber 13 to a predetermined degree of vacuum during the process. A pressure gauge (not shown) is installed at an appropriate position in the chamber 13, and monitor information from the pressure gauge is transmitted to the control unit 90.

A support beam for supporting the dielectric plate 11 is provided on the lower surface of the dielectric plate 11, and the support beam also serves as a shower head 30. The shower head 30 is made of a metal such as aluminum, and may be surface-treated by anodizing. A gas flow path 31 extending in the horizontal direction is formed in the shower head 30, and a gas discharge extending downward to face the processing region S below the shower head 30 is formed in the gas flow path 31. The holes 32 communicate with each other.

A gas introduction pipe 45 communicating with the gas flow path 31 is connected to the upper surface of the dielectric plate 11, and the gas introduction pipe 45 airtightly penetrates the supply port 12b provided in the ceiling 12a of the upper chamber 12. It is connected to the processing gas supply source 44 via a gas supply pipe 41 that is airtightly coupled to the gas introduction pipe 45. An on-off valve 42 and a flow rate controller 43 such as a mass flow controller are interposed at an intermediate position of the gas supply pipe 41. The processing gas supply unit 40 is formed by the gas introduction pipe 45, the gas supply pipe 41, the on-off valve 42, the flow rate controller 43, and the processing gas supply source 44. The gas supply pipe 41 is branched in the middle, and an on-off valve, a flow rate controller, and a processing gas supply source according to the processing gas type are communicated with each branch pipe (not shown). In the plasma treatment, the processing gas supplied from the processing gas supply unit 40 is supplied to the shower head 30 via the gas supply pipe 41 and the gas introduction pipe 45, and is discharged to the processing region S through the gas discharge hole 32. ..

A high frequency antenna 15 is arranged in the upper chamber 12 forming the antenna chamber. The high-frequency antenna 15 is formed by winding an antenna wire 15a formed of a good conductive metal such as copper in an annular shape or a spiral shape. For example, the annular antenna wires 15a may be arranged in multiple layers.

A feeder 16 extending above the upper chamber 12 is connected to the terminal of the antenna wire 15a, a feeder line 17 is connected to the upper end of the feeder member 16, and the feeder line 17 is an impedance matching matching device 18. It is connected to the high frequency power supply 19 via. An induced electric field is formed in the lower chamber 13 by applying high-frequency power of, for example, 13.56 MHz from the high-frequency power source 19 to the high-frequency antenna 15. By this induced electric field, the processing gas supplied from the shower head 30 to the processing region S is turned into plasma to generate inductively coupled plasma, and the ions in the plasma are provided to the substrate G. The high-frequency power supply 19 is a source source for plasma generation, and the high-frequency power supply 73 connected to the substrate mounting table 60 is a bias source that attracts generated ions and imparts kinetic energy. In this way, plasma is generated from the ion source source using inductive coupling, and a bias source, which is a separate power source, is connected to the substrate mounting table 60 to control the ion energy, thereby generating plasma and ion energy. Is controlled independently, and the degree of freedom of the process can be increased. The frequency of the high frequency power output from the high frequency power supply 19 is preferably set in the range of 0.1 to 500 MHz.

The substrate mounting table 60 has a base material 63 and an electrostatic chuck 66 formed on the upper surface 63a of the base material 63.

The base material 63 is formed of a laminate of the upper base material 61 and the lower base material 62. The plan view shape of the upper base material 61 is rectangular, and has a plane dimension similar to that of the FPD mounted on the substrate mounting table 60. For example, the upper base material 61 has a plane dimension similar to that of the substrate G on which it is placed, the length of the long side is about 1800 mm to 3400 mm, and the length of the short side is about 1500 mm to 3000 mm. Can be set. With respect to this plane dimension, the total thickness of the upper base material 61 and the lower base material 62 can be, for example, about 50 mm to 100 mm.

The lower base material 62 is provided with a meandering temperature control medium flow path 62a so as to cover the entire region of the rectangular plane, and is formed of stainless steel, aluminum, an aluminum alloy, or the like. On the other hand, the upper base material 61 is formed of stainless steel, aluminum, an aluminum alloy, or the like. The temperature control medium flow path 62a may be provided on, for example, the upper base material 61 or the electrostatic chuck 66. Further, the base material 63 may be formed of one member made of aluminum, an aluminum alloy, or the like, instead of a laminated body of two members as shown in the illustrated example.

A box-shaped pedestal 68 formed of an insulating material and having a step portion inside is fixed on the bottom plate 13d of the lower chamber 13, and a substrate mounting base 60 is placed on the step portion of the pedestal 68. To.

An electrostatic chuck 66 on which the substrate G is directly placed is formed on the upper surface of the upper base material 61. The electrostatic chuck 66 includes a ceramic layer 64 which is a dielectric film formed by spraying ceramics such as alumina, and a conductive layer 65 (electrode) which is embedded inside the ceramic layer 64 and has an electrostatic adsorption function. Has. The conductive layer 65 is connected to the DC power supply 75 via a feeder line 74. When a switch (not shown) interposed in the feeder line 74 is turned on by the control unit 90, a Coulomb force is generated by applying a DC voltage from the DC power supply 75 to the conductive layer 65. Due to this Coulomb force, the substrate G is electrostatically attracted to the upper surface of the electrostatic chuck 66, and is held in a state of being placed on the upper surface of the upper base material 61. In this way, the substrate mounting table 60 forms the lower electrode on which the substrate G is placed.

The lower base material 62 constituting the substrate mounting table 60 is provided with a meandering temperature control medium flow path 62a so as to cover the entire area of the rectangular plane. At both ends of the temperature control medium flow path 62a, a feed pipe 62b for supplying the temperature control medium to the temperature control medium flow path 62a and a temperature control medium that has been heated through the temperature control medium flow path 62a It communicates with the discharged return pipe 62c. As shown in FIG. 1, the feed pipe 62b and the return pipe 62c communicate with the feed flow path 82 and the return flow path 83, respectively, and the feed flow path 82 and the return flow path 83 communicate with the chiller 81, respectively. .. The chiller 81 has a main body that controls the temperature and discharge flow rate of the temperature control medium, and a pump that pumps the temperature control medium (neither is shown). A refrigerant is applied as the temperature control medium, and Garden (registered trademark), Fluorinert (registered trademark), and the like are applied to this refrigerant. The temperature control form of the illustrated example is a form in which the temperature control medium is circulated through the lower base material 62, but the lower base material 62 may have a built-in heater or the like and the temperature control may be performed by the heater. The temperature may be controlled by both the medium and the heater. Further, instead of the heater, the temperature control accompanied by heating may be performed by circulating a high temperature temperature control medium. The heater, which is a resistor, is formed of tungsten, molybdenum, or a compound of any one of these metals and alumina, titanium, or the like. Further, in the illustrated example, the temperature control medium flow path 62a is formed in the lower base material 62, but for example, the upper base material 61 or the electrostatic chuck 66 may have the temperature control medium flow path.

A temperature sensor such as a thermoelectric pair is arranged on the upper base material 61, and the monitor information by the temperature sensor is transmitted to the control unit 90 at any time. Then, the control unit 90 executes temperature control control of the upper base material 61 and the base material G based on the transmitted monitor information. More specifically, the control unit 90 adjusts the temperature and flow rate of the temperature control medium supplied from the chiller 81 to the feed flow path 82. Then, the temperature control medium whose temperature is adjusted and the flow rate is adjusted is circulated in the temperature control medium flow path 62a, so that the temperature control of the substrate mounting table 60 is executed. The temperature sensor such as a thermoelectric pair may be arranged on the lower base material 62 or the electrostatic chuck 66, for example.

A step portion is formed by the outer periphery of the electrostatic chuck 66 and the upper base material 61 and the upper surface of the rectangular member 68, and a rectangular frame-shaped focus ring 69 is placed on the step portion. When the focus ring 69 is installed on the step portion, the upper surface of the focus ring 69 is set to be lower than the upper surface of the electrostatic chuck 66. The focus ring 69 is formed of ceramics such as alumina or quartz.

A power feeding member 70 is connected to the lower surface of the lower base material 62. A feeder line 71 is connected to the lower end of the feeder member 70, and the feeder line 71 is connected to a high frequency power supply 73 which is a bias power source via a matching box 72 that performs impedance matching. By applying high-frequency power of, for example, 3.2 MHz from the high-frequency power supply 73 to the substrate mounting table 60, ions generated by the high-frequency power supply 19 which is a source source for plasma generation can be attracted to the substrate G. .. Therefore, in the plasma etching process, both the etching rate and the etching selectivity can be increased. A through hole (not shown) may be provided in the lower base material 62, and the power feeding member 70 may penetrate the through hole and be connected to the lower surface of the upper base material 61.

The control unit 90 operates each component of the substrate processing device 100, for example, the chiller 81, the high-frequency power supplies 19, 73, the processing gas supply unit 40, the gas exhaust unit 50 based on the monitor information transmitted from the pressure gauge, and the like. Control. The control unit 90 has a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes a predetermined process according to a recipe (process recipe) stored in a storage area such as RAM. In the recipe, control information of the substrate processing apparatus 100 for the process conditions is set. The control information includes, for example, the gas flow rate, the pressure in the processing container 10, the temperature in the processing container 10, the temperature of the lower base material 62, the process time, and the like.

The recipe and the program applied by the control unit 90 may be stored in, for example, a hard disk, a compact disk, a magneto-optical disk, or the like. Further, the recipe or the like may be set in the control unit 90 in a state of being housed in a storage medium that can be read by a portable computer such as a CD-ROM, a DVD, or a memory card, and may be read. The control unit 90 also has a user interface such as an input device such as a keyboard or mouse for inputting commands, a display device such as a display that visualizes and displays the operating status of the board processing device 100, and an output device such as a printer. Have.

<Seal structure>
Next, various seal structures constituting the substrate processing apparatus 100 will be described with reference to FIGS. 1 to 6. As shown in FIG. 1, the substrate processing apparatus 100 is formed by a sealing structure of various two members, and by disposing the sealing member on each sealing surface of the two members, between the processing area S and the external area E Seal structure is formed.

In FIG. 1, as an example of the seal structure between the processing region S and the outer region E, there is a seal structure 110 between the lower chamber 13 (an example of the first member) and the upper chamber 12 (an example of the second member). .. In the seal structure 110, a rectangular frame-shaped (endless) dovetail groove 112 is formed on the sealing surface of the rectangular frame-shaped lower chamber 13 along the longitudinal direction of the sealing surface, and an O-ring or the like is sealed in the dovetail groove 112. The member 118 is fitted. The seal structure 110 is formed by holding the seal member 118 on the rectangular frame-shaped seal surface of the upper chamber 12. In the illustrated example, the dovetail groove 112 is formed on the sealing surface of the lower chamber 13, but the dovetail groove may be formed on the sealing surface of the upper chamber 12. The seal structure 110 will be described in detail below.

Further, as another sealing structure, a viewing window 25 (second) attached so as to close the opening 13c formed in the side wall 13a (an example of the first member) of the lower chamber 13 and the opening 13c. There is a seal structure 120 with (an example of a member). In this seal structure 120, the outer surface of the side wall 13a serves as a seal surface, and a rectangular frame-shaped (endless) dovetail groove 122 is formed around the side view rectangular opening 13c on the outer side surface, and the dovetail groove 122 has an O-ring. A seal member 128 such as a ring is fitted. The seal structure 120 is formed by holding the seal member 128 on the seal surface of the viewing window 25. The seal structure 120 will be described in detail below. The opening 13c and the dovetail groove 122 are not limited to the rectangular frame shape, but may have an annular shape or the like.

Further, as yet another sealing structure, a gas exhaust pipe is attached around the exhaust port 13f provided in the bottom plate 13d (an example of the first member) of the lower chamber 13 and so as to close the exhaust port 13f. There is a seal structure 130 with 51 (an example of a second member). In this seal structure 130, the outer surface (lower surface) of the bottom plate 13d serves as a seal surface, and an annular (endless) dovetail groove 132 is formed around the circular exhaust port 13f on the outer surface, and the dovetail groove 132 is O-ringed. A seal member 138 such as a ring is fitted. The seal structure 130 is formed by holding the seal member 138 on the seal surface of the gas exhaust pipe 51.

Further, as yet another sealing structure, a gas supply pipe is attached around the supply port 12b provided in the ceiling 12a (an example of the first member) of the upper chamber 12 and so as to close the supply port 12b. There is a seal structure 140 with 41 (an example of a second member). In this seal structure 140, the outer surface (upper surface) of the ceiling 12a serves as a seal surface, and an annular (endless) dovetail groove 142 is formed around the circular supply port 12b on the outer surface, and the dovetail groove 142 is O-ringed. A seal member 148 such as a ring is fitted. The seal structure 140 is formed by holding the seal member 148 on the seal surface of the gas supply pipe 41.

Further, as yet another sealing structure, there is a sealing structure 150 between the pedestal 68 (an example of the first member) and the substrate mounting pedestal 60 (an example of the second member) mounted on the pedestal 68. In this seal structure 150, the upper surface (mounting surface) of the rectangular frame-shaped step portion in the plan view of the pedestal 68 serves as a sealing surface, and a rectangular frame-shaped (endless) dovetail groove 152 is formed on the rectangular frame-shaped upper surface. Then, a seal member 158 such as an O-ring is fitted in the dovetail groove 152. The seal structure 150 is formed by holding the seal member 158 on the seal surface of the lower base material 62 that forms the substrate mounting table 60.

The seal structure 150 may have various seal structures other than those shown in the illustrated examples, depending on the shape of the pedestal 68 and the mounting form of the substrate mounting base 60. For example, when a pedestal is formed by laminating a plurality of frame-shaped members, a dovetail groove is formed on one of the sealing surfaces of two vertically adjacent members, and the sealing member is fitted to form a sealing structure.

Further, although not shown, in FIG. 1, a seal structure may be formed between the bottom surface of the pedestal 68 and the top surface of the bottom plate 13d of the lower chamber 13. In this case, for example, in the bottom plate 13d, an endless dovetail groove is formed around a portion through which the feeder line 71 penetrates, and a seal member is fitted into the dovetail groove to form a seal structure.

Further, although not shown, in a form in which the lifter pin penetrates the bottom plate of the lower chamber and the board mount so as to be able to move up and down, for example, a seal is provided between the lifter pin and the bottom plate of the lower chamber, or between the lifter pin and the board mount. The structure is formed.

In any of the above forms of the seal structures 110 to 150, for example, nitrile rubber (NBR), fluororubber (FKM), and silicone rubber (Q) are used as the material of the O-ring applied as the seal members 118 to 158. be able to. Further, fluorosilicone rubber (FVMQ), perfluoropolyether rubber (FO), acrylic rubber (ACM), and ethylene propylene rubber (EPM) can be used.

On the sealing surface between the upper chamber 12 and the lower chamber 13, it is preferable that a shield structure (not shown) is formed on the processing region S side or the outer region E side of the rectangular frame-shaped seal structure 110. .. Like the seal structure 110, this shield structure is formed in a rectangular frame shape (endless shape) or an intermittent frame shape instead of the endless shape. For example, a separate dovetail groove for the shield structure is formed on the side of the dovetail groove 112 formed on the sealing surface of the lower chamber 13. A spiral shield is fitted into the dovetail groove and is held by the sealing surface of the upper chamber 12. The spiral shield is made of a metal such as aluminum, stainless steel, copper, or iron, and has a function of ensuring continuity between the upper chamber 12 and the lower chamber 13 and keeping the upper chamber 12 at the ground potential. Further, the spiral shield has a function of preventing high frequency waves and plasma from leaking from between the upper chamber 12 and the lower chamber 13.

Hereinafter, the seal structures 110 and 120 will be described in detail, but the basic configurations of the other seal structures 130 to 150 are the same as those of the seal structures 110 and 120.

(Example of seal structure)
First, the seal structure 110 will be described with reference to FIGS. 2 and 3A and 3B. Here, FIG. 2 is a plan view of a part of the lower chamber viewed from above in the seal structure between the upper chamber and the lower chamber forming the processing container. 3A is an arrow view of IIIa-IIIa of FIG. 2, and FIG. 3B is an arrow view of IIIb-IIIb of FIG.

As shown in FIG. 2, the rectangular frame-shaped sealing surface 111 of the lower chamber 13 is formed with an dovetail groove 112 having a linear shape along the endless linear alignment of the sealing surface 111. A columnar introduction hole 113 is formed at an intermediate position of the dovetail groove 112, and the dovetail groove 112 is formed flush with the end portion of the introduction hole 113 on the processing region S side. Since the introduction hole 113 is a hole into which a cutting tool (see FIGS. 9 and 10) used when machining the dovetail groove 112 is inserted, as shown in FIG. 2, from the width t1 of the opening of the dovetail groove 112. Also has a large diameter t2.

As shown in FIG. 2, since the dovetail groove 112 is formed flush with the end portion of the introduction hole 113 on the processing region S side, the introduction hole 113 projects toward the processing region S side from the dovetail groove 112. However, a part of the introduction hole 113 projects to the outer region E side. Then, a seal member 118 made of an endless O-ring or the like is fitted into the rectangular frame-shaped (endless) dovetail groove 112.

In the seal structure 110, at the intersection of the introduction hole 113 and the dovetail groove 112 (the so-called entry point where the cutting tool is inserted when machining the dovetail groove), the seal member 118 has the dovetail groove as shown in FIG. 3A. It is fitted in a state of being brought close to the processing area side S of 112. The introduction holes 113 may be provided at a plurality of locations in the longitudinal direction of the dovetail groove 112.

On the other hand, in the general portion of the seal structure 110 (the portion where the introduction hole 113 does not exist), the seal member 118 is fitted into the dovetail groove 112 as shown in FIG. 3B. Then, when the seal surface 115 of the upper chamber 12 and the seal surface 111 of the lower chamber 13 come into contact with each other, a part of the seal member 118 is crushed and deformed to form the seal structure 110.

As shown in FIG. 2, in the seal structure 110, the introduction hole 113 does not project toward the processing region S side from the dovetail groove 112, so that the reaction product generated in the processing region S is deposited in the introduction hole 113. Is resolved. In the conventional configuration of the introduction hole and the dovetail groove, the center of the circular introduction hole in the plan view and the center of the width of the dovetail groove coincide with each other, and a part of the introduction hole having a diameter larger than the width of the opening of the dovetail groove. Overhangs the processing area S side from the dovetail groove to form a gap. Therefore, the reaction product generated in the processing region S may accumulate in this gap and cause particles and corrosion.

FIG. 4 is a cross-sectional view showing another embodiment of the dovetail groove, and is a view showing a mode corresponding to FIG. 3B. As shown in FIG. 4, a single dovetail groove 114 having a tapered surface on only one side may be formed in at least a part of the endless dovetail groove formed on the seal surface 111.

(Other examples of seal structure)
Next, the seal structure 120 will be described with reference to FIGS. 5 and 6A and 6B. Here, FIG. 5 is a side view of the periphery of the side wall opening as viewed from the side in the seal structure between the periphery of the side wall opening of the processing container and the viewing window. 6A is a view taken along the line VIa-VIa of FIG. 5, and FIG. 6B is a view taken along the line VIb-VIb of FIG.

As shown in FIG. 5, an endless dovetail groove 122 along the contour of the opening 13c is formed on the sealing surface 121 around the side view rectangular opening 13c provided in the side wall 13a of the lower chamber 13. There is. A columnar introduction hole 123 is formed in the middle of the dovetail groove 122, and the dovetail groove 122 is formed flush with the end of the introduction hole 123 on the processing region S side (opening 13c side). There is. Since the introduction hole 123 is a hole into which a cutting tool (see FIGS. 9 and 10) used when machining the dovetail groove 122 is inserted, as shown in FIG. 5, from the width t3 of the opening of the dovetail groove 122. Also has a large diameter t4.

As shown in FIG. 5, since the dovetail groove 122 is formed flush with the end of the introduction hole 123 on the processing region S side, the introduction hole 123 projects toward the processing region S side from the dovetail groove 122. Not so, a part of the introduction hole 123 projects to the outer region E side. Then, a seal member 128 made of an endless O-ring or the like is fitted into the rectangular frame-shaped (endless) dovetail groove 122.

At the intersection of the introduction hole 123 and the dovetail groove 122 (so-called entry point) in the seal structure 120, the seal member 128 is fitted in a state of being brought close to the processing region side S of the dovetail groove 122 as shown in FIG. 6A. It has been. The introduction holes 123 may be provided at a plurality of locations in the longitudinal direction of the dovetail groove 122.

On the other hand, in the general part of the seal structure 120, the seal member 128 is fitted in the dovetail groove 122 as shown in FIG. 6B. Then, when the seal surface 121 of the lower chamber 13 and the seal surface 125 of the viewing window 25 come into contact with each other, a part of the seal member 128 is crushed and deformed to form the seal structure 120.

As shown in FIG. 5, in the seal structure 120, since the introduction hole 123 does not project toward the treatment area S side from the dovetail groove 122, the reaction product generated in the treatment area S is deposited in the introduction hole 123. Is resolved.

[Dovetail grooving method according to the embodiment]
Next, an example of the dovetail grooving method according to the embodiment will be described with reference to FIGS. 7 to 12. Here, FIGS. 7, 9, 10, and 12 are process diagrams for explaining the dovetail groove processing method according to the embodiment in order, and FIG. 8 is an arrow view of VIII-VIII of FIG. FIG. 11 is a view taken along the line XI-XI of FIG. Here, a method of processing the dovetail groove 112 that forms the seal structure 110 will be described.

First, as shown in FIGS. 7 and 8, a columnar introduction hole 113 is machined on the seal surface 111 of the lower chamber 13 using a cutting tool (not shown).

Next, as shown in FIG. 9, a cutting tool T having a tapered cutting blade B whose lower tip projects outward is inserted into the introduction hole 113. Then, as shown in FIGS. 10 and 11, the upper end Ba of the cutting blade B comes into contact with the end 113a on the processing region S side of the introduction hole 113 while rotating the cutting tool T around its axis in the X direction. The cutting tool T is moved in the Y1 direction (the width direction of the seal surface 111), which is the first direction, while cutting. When the depth of the introduction hole 113 is shallower than the length of the cutting blade B, the portion of the cutting blade B that is below the upper end Ba and corresponds to the end portion 113a of the opening of the introduction hole 113 is the end portion. Cut until it comes into contact with 113a.

Next, as shown in FIG. 12, the cutting tool T is moved while rotating in the Y2 direction, which is the second direction, which intersects the Y1 direction, which is the first direction (the intersection direction in the illustrated example is an orthogonal direction). The dovetail groove 112 is machined along the longitudinal direction of the sealing surface 111.

For example, when there is only one introduction hole 113, the dovetail groove 112 is started to be machined starting from the introduction hole 113 shown in FIG. 12, the dovetail groove 112 is machined in a rectangular frame shape, and the cutting tool T is returned to the introduction hole 113. As a result, the rectangular frame-shaped dovetail groove 112 shown as a part of FIG. 2 is processed.

For example, when two introduction holes 113 are provided, the machining efficiency can be improved by machining the dovetail groove 112 with two cutting tools T starting from each introduction hole 113. In addition, when there are two introduction holes 113 (for example, when the introduction holes 113 are provided at the centers of the opposite short sides of the rectangular frame shape), the dovetail groove 112 is a rectangular frame starting from one of the introduction holes 113. Process to half of the shape. Next, for example, the turntable on which the lower chamber 13 is placed is rotated, and the other half of the dovetail groove 112 is similarly machined starting from the other introduction hole 113 to machine the rectangular frame-shaped dovetail groove 112. Can be done. This is a particularly effective processing method when the object to be processed is large.

Other embodiments may be obtained in which other components are combined with respect to the configurations listed in the above embodiments, and the present disclosure is not limited to the configurations shown here. This point can be changed without departing from the gist of the present disclosure, and can be appropriately determined according to the application form thereof.

For example, the substrate processing apparatus 100 of the illustrated example has been described as an inductively coupled plasma processing apparatus provided with a dielectric window, but even if it is an inductively coupled plasma processing apparatus provided with a metal window instead of the dielectric window. Often, it may be another form of plasma processing apparatus. Specific examples thereof include Electron Cyclotron resonance plasma (ECP), Helicon Wave Plasma (HWP), and Capacitively coupled Plasma (CCP). In addition, microwave-excited surface wave plasma (SWP) can be mentioned. All of these plasma processing devices, including ICP, can independently control ion flux and ion energy, can freely control the etching shape and selectivity, and have a high electron density of about 10 ^{11 to} 10 ¹³ cm ^-3. Is obtained.

12 Upper chamber (second member)
12a Ceiling (first member)
13 Lower chamber (first member)
13a Side wall (first member)
25 Peep window (second member)
13d bottom plate (first member)
41 Gas supply pipe (second member)
51 Gas exhaust pipe (second member)
60 Board mounting table (second member)
68 pedestal (first member)
100 Substrate processing device 111, 115 Sealing surface 112 Dovetail groove 113 Introduction hole 114 Dovetail groove (single dovetail groove)
118 Seal member (O-ring)
121, 125 Sealing surface 122 Dovetail groove 123 Introduction hole 128 Sealing member (O-ring)
132 Dovetail groove 138 Seal member (O-ring)
142 Dovetail groove 148 Sealing member (O-ring)
152 Dovetail groove 158 Seal member (O-ring)
G Substrate S Processing area E External area T Cutting tool B Cutting blade

Claims (19)

In the sealing surface where the internal processing area and the external external area of the substrate processing apparatus are shielded by a sealing member provided on the sealing surface between the first member and the second member forming the substrate processing apparatus. , A method of processing a dovetail groove for accommodating the seal member.
The process of processing the introduction hole on the sealing surface and
A cutting tool having a tapered cutting blade whose lower tip projects outward is inserted into the introduction hole, and the cutting tool is inserted until the cutting blade comes into contact with the end of the introduction hole on the processing region side. The process of cutting while moving in the first direction,
A dovetail groove processing method comprising a step of moving the cutting tool in a second direction intersecting the first direction to process the dovetail groove along the longitudinal direction of the seal surface. The dovetail groove processing method according to claim 1, wherein the introduction hole does not project from the dovetail groove toward the processing region. The dovetail groove processing method according to claim 1 or 2, wherein the sealing surface has a frame-like or annular endless shape, and the dovetail groove has a linearity along the endless alignment of the sealing surface. The dovetail grooving method according to any one of claims 1 to 3, wherein the intersecting directions of the first direction and the second direction are orthogonal to each other. The dovetail groove processing method according to any one of claims 1 to 4, wherein at least a part of the dovetail groove is processed as a single dovetail groove. The substrate processing apparatus has a processing container formed by a lower chamber and an upper chamber.
The first member and the second member are the lower chamber and the upper chamber, respectively.
The dovetail groove processing method according to any one of claims 1 to 5, wherein the dovetail groove is formed on the sealing surface of either the lower chamber or the upper chamber. The substrate processing apparatus has a processing container, and a viewing window is attached so as to close an opening formed in a side wall of the processing container.
The first member and the second member are the side wall and the viewing window, respectively.
The dovetail groove processing method according to any one of claims 1 to 6, wherein the dovetail groove is formed on the sealing surface around the opening of the side wall. The substrate processing apparatus has a processing container, and a gas supply pipe is attached via a supply port provided on the ceiling of the processing container.
The first member and the second member are the ceiling and the gas supply pipe, respectively.
The dovetail groove processing method according to any one of claims 1 to 7, wherein the dovetail groove is formed on the sealing surface around the supply port of the ceiling. The substrate processing apparatus has a processing container, and a gas exhaust pipe is attached via an exhaust port provided in the bottom plate of the processing container.
The first member and the second member are the bottom plate and the gas exhaust pipe, respectively.
The dovetail groove processing method according to any one of claims 1 to 8, wherein the dovetail groove is formed on the seal surface around the exhaust port of the bottom plate. The substrate processing apparatus has a processing container, a pedestal is fixed on the bottom plate of the processing container, and a substrate mounting table is mounted on the pedestal.
The first member and the second member are the pedestal and the substrate mounting table, respectively.
The dovetail groove processing method according to any one of claims 1 to 9, wherein the dovetail groove is formed on the sealing surface of either the pedestal or the substrate mounting table. In the sealing surface where the internal processing area and the external external area of the substrate processing apparatus are shielded by a sealing member provided on the sealing surface between the first member and the second member forming the substrate processing apparatus. , A substrate processing device provided with a dovetail groove for accommodating the seal member.
The sealing surface is provided with a columnar introduction hole.
A substrate processing apparatus in which the dovetail groove is formed flush with the end portion of the introduction hole on the processing region side and extends in the longitudinal direction of the sealing surface. The substrate processing apparatus according to claim 11, wherein the introduction hole does not project from the dovetail groove toward the processing region. The substrate processing apparatus according to claim 11 or 12, wherein the sealing surface has a frame-like or annular endless shape, and the dovetail groove has a linearity along the endless alignment of the sealing surface. The substrate processing apparatus according to any one of claims 11 to 13, wherein at least a part of the dovetail groove is a single dovetail groove. The substrate processing apparatus has a processing container formed by a lower chamber and an upper chamber.
The first member and the second member are the lower chamber and the upper chamber, respectively.
The substrate processing apparatus according to any one of claims 11 to 14, wherein the dovetail groove is formed on the sealing surface of either the lower chamber or the upper chamber. The substrate processing apparatus has a processing container, and a viewing window is attached so as to close an opening formed in a side wall of the processing container.
The first member and the second member are the side wall and the viewing window, respectively.
The substrate processing apparatus according to any one of claims 11 to 15, wherein the dovetail groove is formed on the sealing surface around the opening of the side wall. The substrate processing apparatus has a processing container, and a gas supply pipe is attached via a supply port provided on the ceiling of the processing container.
The first member and the second member are the ceiling and the gas supply pipe, respectively.
The substrate processing apparatus according to any one of claims 11 to 16, wherein the dovetail groove is formed on the sealing surface around the supply port of the ceiling. The substrate processing apparatus has a processing container, and a gas exhaust pipe is attached via an exhaust port provided in the bottom plate of the processing container.
The first member and the second member are the bottom plate and the gas exhaust pipe, respectively.
The substrate processing apparatus according to any one of claims 11 to 17, wherein the dovetail groove is formed on the sealing surface around the exhaust port of the bottom plate. The substrate processing apparatus has a processing container, a pedestal is fixed on the bottom plate of the processing container, and a substrate mounting table is mounted on the pedestal.
The first member and the second member are the pedestal and the substrate mounting table, respectively.
The substrate processing apparatus according to any one of claims 11 to 18, wherein the dovetail groove is formed on the sealing surface of either the pedestal or the substrate mounting table.

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