JP2020186426A - Sputter film deposition apparatus - Google Patents

Abstract

To provide a technology for suppressing a warp caused by heat elongation of a magnet device in an apparatus for depositing a film by magnetron sputtering.SOLUTION: A sputter film deposition apparatus includes a plurality of targets 7 electrically connected to backing plates 8 in a vacuum tank 2, earth shields 9 each arranged between the neighboring targets 7 of a plurality of the targets 7, and a plurality of magnet devices 10 installed on the back sides of a plurality of the targets 7 in the vacuum tank 2. A thermal insulation member 14 for shielding the magnet device 10 from radiation heat from the earth shield 9 is installed between the earth shield 9 and the magnet device 10.SELECTED DRAWING: Figure 1

Description

The present invention relates to a sputtering apparatus that forms a film on a substrate by sputtering in a vacuum, and more particularly to a magnetron sputtering apparatus.

Conventionally, a sputter film forming apparatus that performs magnetron sputtering using a magnet apparatus that generates a magnetic circuit has been known.

FIG. 4 is a partial cross-sectional view showing the internal configuration of a conventional sputtering film forming apparatus.

As shown in FIG. 4, the sputtering film forming apparatus 101 has a vacuum chamber 102 having a ground potential, and the substrate 106 held by the substrate holder 105 is arranged inside the vacuum chamber 102. It has become.

A plurality of targets 107 attached to the backing plate 108 are provided in the vacuum chamber 102 so as to face the substrate 106, and a plurality of targets 107 are provided on the opposite side of the backing plate 108 in the vacuum chamber 102 from the substrate 106. A magnet device 110 is provided.

Under such a configuration, sputter gas is introduced into the vacuum chamber 102, and predetermined electric power is applied to each of the plurality of targets 107 to generate plasma of the sputter gas to perform sputtering on the substrate 106. A thin film is formed on the surface.

However, in recent years, in this type of sputter film forming apparatus, there has been a problem that the magnet apparatus becomes larger as the apparatus becomes larger, and as a result, the magnet apparatus warps.

That is, for example, in the sputtering film forming apparatus 101 shown in FIG. 4, the clearance between the magnet apparatus 110 and the backing plate 108 is only about 10 mm due to the configuration of the apparatus, and the clearance is caused by the warp caused by the thermal elongation of the magnet apparatus 110. It may disappear and the magnet device 110 and the backing plate 108 may rub against each other.

Even when the magnet device 110 and the backing plate 108 do not rub against each other, the magnetic field fluctuates due to the warp caused by the thermal elongation of the magnet device 110, which may affect the in-plane distribution of the sputter film formed.

The present invention has been made in consideration of such problems of the prior art, and an object of the present invention is to suppress warpage caused by thermal elongation of a magnet device in a device for forming a film by magnetron sputtering. To provide technology.

The present invention, which has been made to solve the above problems, is a sputtering film forming apparatus that forms a film on a substrate by sputtering, and is electrically connected to a backing plate and arranged in a vacuum chamber and the vacuum chamber. It has a plurality of targets, an earth shield arranged between adjacent targets of the plurality of targets, and a plurality of magnet devices provided on the back side of the plurality of targets in the vacuum chamber. A heat shield member for blocking radiant heat from the earth shield to the magnet device is provided between the earth shield and the magnet device.
The present invention is also effective when the heat shield member is provided so as to cover the earth shield and the backing plate side portion of the magnet device.
In the present invention, it is also effective when the heat shield member is attached to the magnet device.
In the present invention, it is also effective when the heat shield member is attached to the earth shield.

According to the present invention, a heat shield member is provided between an earth shield arranged between adjacent targets and a magnet device provided on the back side of the target to block heat radiated from the earth shield with respect to the magnet device. Therefore, the temperature rise of the magnet device can be suppressed, and as a result, the warp caused by the thermal elongation of the magnet device can be suppressed.

In the present invention, when the heat shield member is provided so as to cover the earth shield and the backing plate side portion of the magnet device, the heat from the earth shield and the backing plate is blocked by the heat shield member. As a result, warpage caused by thermal elongation of the magnet device can be reliably suppressed.

(A): Partial cross-sectional view showing the internal configuration of the embodiment of the sputter film forming apparatus according to the present invention, (b): Partial cross-sectional view showing the main part of the present embodiment. (A): Plan view showing the configuration of the magnet device and the earth shield in the present embodiment, (b): Plan view showing the configuration of the magnet device, the earth shield and the heat shield member in the present embodiment. (A): Partial sectional view showing the internal configuration of another embodiment of the present invention, (b): Partial sectional view showing a main part of the present embodiment. Partial cross-sectional view showing the internal configuration of a conventional sputtering film deposition apparatus

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1A is a partial cross-sectional view showing an internal configuration of an embodiment of a sputtering film forming apparatus according to the present invention, and FIG. 1B is a partial cross-sectional view showing a main part of the embodiment.

The sputtering film forming apparatus 1 of the present embodiment is of a magnetron sputtering method, and has a vacuum chamber 2 having a ground potential as shown in FIG. 1A.

The vacuum chamber 2 is connected to a vacuum exhaust device 3 that performs vacuum exhaust inside the vacuum chamber 2, and is also connected to a sputter gas source 4 capable of introducing a sputter gas such as argon (Ar) gas into the vacuum chamber 2.

A substrate 6 held by the substrate holder 5 is arranged in the vacuum chamber 2, and a plurality of targets 7 attached to the backing plate 8 are provided so as to face the substrate 6. There is.

The backing plate 8 is attached to the wall surface of the vacuum chamber 2 via an insulating material (not shown), whereby the backing plate 8 is electrically insulated from the vacuum chamber 2.

The backing plate 8 is electrically connected to a power supply device (not shown), and is configured to apply a predetermined electric power (voltage) to the target 7 via the backing plate 8.

The type of electric power applied to the target 7 is not particularly limited, and may be any of direct current and alternating current (including high frequency and pulsed ones).

An earth shield 9 is provided between the adjacent targets 7 of the plurality of targets 7.

The earth shield 9 is for preventing abnormal discharge between adjacent targets 7, and is made of, for example, titanium (Ti) and is configured to have a ground potential.

The earth shield 9 is provided with a base portion 9a extending toward the magnet device 10 side, which will be described later.

A plurality of magnet devices 10 are provided on the back side of the backing plate 8 in the vacuum chamber 2, that is, on the side opposite to the substrate 6.

FIG. 2A is a plan view showing the configuration of the magnet device and the earth shield according to the present embodiment, and FIG. 2B is a plan view showing the configuration of the magnet device, the earth shield and the heat shield member according to the present embodiment. It is a figure.

As shown in FIGS. 1 (a) and 1 (b) and 2 (a) and 2 (b), each magnet device 10 is installed on the yoke 10a so as to generate a magnetic field on the sputter surface 7a of the target 7. It has a central magnet 11 and an outer peripheral magnet 12 installed in a continuous shape around the central magnet 11, and these are provided on a magnet fixing plate 13.

The central magnet 11 is formed in a rectangular parallelepiped shape so as to be parallel to the backing plate 8, and the outer peripheral magnet 12 is formed in an annular shape on the yoke 10a at a predetermined distance from the peripheral edge of the central magnet 11 to form a center. It is arranged so as to surround the magnet 11.

The outer peripheral magnet 12 does not necessarily mean that it has a seamless ring shape. That is, as long as it has a shape that surrounds the periphery of the central magnet 11, it may be composed of a plurality of parts, or may have a linear shape in a certain portion. Further, a closed ring or a shape obtained by deforming the ring while it is closed may be used.

The size of the magnet device 10 of this example is set so that the outer diameter of the outer peripheral magnet 12 (yoke 10a) is smaller than the outer diameter of each target 7.

The outer peripheral magnet 12 and the central magnet 11 are arranged so that magnetic poles having different polarities face each other with respect to the sputtering surface 7a of the target 7.

A moving device (not shown) such as an XY stage driven by a drive mechanism (not shown) is arranged on the back side of the yoke 10a of the magnet device 10, and the magnet device 10 is configured to move by this moving device. There is.

In the present embodiment, each magnet device 10 is configured to reciprocate along the sputtering surface 7a of the target 7 in a direction orthogonal to the extending direction (longitudinal direction) of the central magnet 11.

As shown in FIGS. 1 (a) and 1 (b) and 2 (b), a heat shield member 14 is provided between the earth shield 9 and the magnet device 10 to block heat from the earth shield 9 to the magnet device 10. Has been done.

In the present embodiment, in each magnet device 10, the surface of the outer peripheral magnet 12 and the central magnet 11 facing the base 9a of the earth shield 9, the surface facing the backing plate 8, and the base of the earth shield 9 of the yoke 10a. A heat shield member 14 is provided so as to cover the surface facing the 9a and the surface facing the backing plate 8.

The heat shield member 14 is made of, for example, Al (aluminum), and can be formed by bending a plate-shaped member having a thickness of about 1 to 2 mm into a U-shaped cross section.

Further, the surface of the heat shield member 14 is mirror-finished so that the reflectance is as large as possible.

In order to minimize the amount of radiant heat to the magnet device 10, the heat shield member 14 is configured to be held by each magnet device 10 by using a holding member 15 such as a screw without contacting the magnet device 10. Is preferable.

On the other hand, as shown in FIG. 2B, the heat shield member 14 can be provided only in the middle portion of each magnet device 10 instead of the entire range in the longitudinal direction.

This is because magnetic force adjusting members (not shown) are provided at both ends of each magnet device 10, and the heat shield member 14 interferes with the magnetic force adjusting members.

According to the findings of the present inventor, even when the heat shield members 14 are not present at both ends of each magnet device 10, the heat shield members 14 have a length of 50% or more of the length of the magnet device 10. If so, it has been confirmed that the warp of the magnet device 10 can be suppressed.

Further, the heat shield member 14 can be configured to circulate a cooling medium such as water, and according to such a configuration, the temperature rise of the magnet device 10 can be reliably prevented.

In the present embodiment having such a configuration, when the film is formed on the substrate 6 by sputtering, the inside of the vacuum chamber 2 is evacuated and the sputter gas is introduced into the vacuum chamber 2, and a power source (not shown) is used. A predetermined negative voltage is applied from the device to the target 7 via the backing plate 8.

Then, the plurality of magnet devices 10 are reciprocated along the sputtering surface 7a of the target 7 in a direction orthogonal to the extending direction of the central magnet 11.

By the above operation, an electric discharge is generated between the target 7 and the substrate 6, and the sputter gas on the target 7 is ionized and turned into plasma.

The ions of the sputtering gas existing in the plasma are captured by the magnetic field generated by the magnet device 10.

In the present embodiment, a negative voltage is applied to the target 7, and the ions of the sputter gas collide with the sputter surface 7a of the negative potential target 7, and the particles (sputtered particles) of the target material are repelled.

The sputtered particles reach and adhere to the surface of the substrate 6 described above, and a film of the target material is formed on the substrate 6.

According to the present embodiment described above, the earth shield 9 with respect to the magnet device 10 is provided between the earth shield 9 arranged between the adjacent targets 7 and the magnet device 10 provided on the back side of the target 7. Since the heat shield member 14 for blocking the radiant heat from the magnet device 10 is provided, the temperature rise of the magnet device 10 can be suppressed, and as a result, the warp caused by the thermal elongation of the magnet device 10 can be suppressed.

In particular, in the present embodiment, since the heat shield member 14 is provided so as to cover the portion of the magnet device 10 on the side of the earth shield 9 and the backing plate 8, the radiant heat from the earth shield 9 and the backing plate 8 is provided. Is shielded by the heat shield member 14, which can reliably suppress the warp caused by the heat elongation of the magnet device 10.

3 (a) and 3 (b) show other embodiments of the present invention, FIG. 3 (a) is a partial cross-sectional view showing an internal configuration, and FIG. 3 (b) shows the present embodiment. It is a partial cross-sectional view which shows the main part. Hereinafter, the parts corresponding to the above-described embodiments are designated by the same reference numerals, and detailed description thereof will be omitted.

In the sputtering film forming apparatus 1A of the present embodiment, as shown in FIG. 3A, the heat shield member 16 is also attached to each earth shield 9.

Specifically, as shown in FIG. 3B, the heat shield member 16 covers the surface of the base portion 9a of each earth shield 9 facing the heat shield member 14 and the tip portion of the base portion 9a of the earth shield 9. Is provided.

As the heat shield member 16, it is preferable to use a heat shield member 16 whose surface is mirror-finished as in the above embodiment so that the reflectance is as large as possible.

Further, in order to minimize the amount of heat radiated to the magnet device 10 (heat shield member 14), the heat shield member 16 on the earth shield 9 side is not brought into contact with the base portion 9a of the earth shield 9, for example. It is preferable that the base portion 9a of each earth shield 9 is held by using a holding member 17 such as a screw.

According to the present embodiment having such a configuration, the radiant heat of the earth shield 9 with respect to the magnet device 10 can be reduced, so that the temperature rise of the magnet device 10 is further suppressed, and as a result, the magnet device 10 Warpage due to thermal elongation can be reliably suppressed.

The present invention is not limited to the above embodiment, and various modifications can be made. For example, in the embodiment shown in FIGS. 3A and 3B, the heat shield members 14 and 16 are provided on both the magnet device 10 and the earth shield 9, but the present invention is not limited to this, and the earth shield is not limited to this. It is also possible to provide a heat shield member only on the magnet.

However, in this case, it is preferable to configure the structure so that heat is sufficiently released from the earth shield.

1 ... Sputter film forming apparatus 2 ... Vacuum tank 6 ... Substrate 7 ... Target 7a ... Sputter surface 8 ... Backing plate 9 ... Earth shield 10 ... Magnet device 11 ... Central magnet 12 ... Outer magnet 14 ... Heat shield Member 15 ... Holding member

Claims (4)

A sputtering film forming apparatus that forms a film on a substrate by sputtering.
With a vacuum tank
In the vacuum chamber, a plurality of targets electrically connected to the backing plate and arranged side by side,
An earth shield placed between adjacent targets of the plurality of targets, and
It has a plurality of magnet devices provided on the back side of the plurality of targets in the vacuum chamber.
A sputtering film forming apparatus in which a heat shield member for blocking radiant heat from the earth shield with respect to the magnet device is provided between the earth shield and the magnet device. The sputter film forming apparatus according to claim 1, wherein the heat shield member is provided so as to cover the earth shield and the backing plate side portion of the magnet device. The sputter film forming apparatus according to any one of claims 1 or 2, wherein the heat shield member is attached to the magnet device. The sputter film forming apparatus according to any one of claims 1 to 3, wherein the heat shield member is attached to the earth shield.

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