JP2020184539A - 荷電粒子顕微鏡を使用したサンプル検査方法 - Google Patents
荷電粒子顕微鏡を使用したサンプル検査方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000002245 particle Substances 0.000 title claims abstract description 49
- 238000007689 inspection Methods 0.000 title abstract description 3
- 238000005259 measurement Methods 0.000 claims abstract description 24
- 239000000523 sample Substances 0.000 claims description 64
- 238000012360 testing method Methods 0.000 claims description 33
- 239000003086 colorant Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 description 36
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 17
- 239000000126 substance Substances 0.000 description 12
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 238000004626 scanning electron microscopy Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000002591 computed tomography Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000010801 machine learning Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000001888 ion beam-induced deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 241000252073 Anguilliformes Species 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
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-
- G—PHYSICS
- G01—MEASURING; TESTING
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- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
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- G—PHYSICS
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- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
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Abstract
Description
−荷電粒子源と、最終プローブ形成レンズと、走査部材と、を含む光学カラムであるとともに、前述の荷電粒子源から放出された荷電粒子ビームを、試験片上へと、焦点合わせする光学カラムと、
−前述の最終プローブ形成レンズの下流側に配置されているとともに、前述の試験片を保持し得るように構成された試験片ステージと、
−前述の荷電粒子源から放出された荷電粒子の入射に応答して前述の試験片から放出される第1タイプの放出を検出するための第1検出器と、
−前述の第1検出器に対して接続された、制御ユニット及び処理デバイスと、を含む。
−TEMカメラ30。このカメラ30のところにおいては、電子束は、静止画像(又はディフラクトグラム)を生成することができ、この静止画像は、コントローラ/プロセッサ20によって処理することができて、例えばフラットパネルディスプレイなどのディスプレイデバイス(図示せず)上に表示することができる。不要な場合には、カメラ30は、後退/退避させることができ(矢印30’によって概略的に示すように)、これにより、軸線B’に対して干渉しないようにすることができる。
−STEMカメラ32。このカメラ32からの出力は、試験片S上におけるビームBの(X、Y)走査位置の関数として記録することができ、X、Yの関数としてのカメラ32からの出力の「マップ」である画像を、構築することができる。カメラ32は、カメラ30内に特徴的に存在する複数の画素からなるマトリクスとは対照的に、例えば直径が20mmの単一画素を含むことができる。その上、カメラ32は、一般に、カメラ30(例えば、102画像/秒)と比較して、はるかに大きな取得速度(例えば、106ポイント/秒)を有することとなる。この場合にも、必要でない場合には、カメラ32は、後退/退避させることができ(矢印32’によって概略的に示すように)、これにより、軸線B’に対して干渉しないようにすることができる(ただし、そのような後退は、例えば、ドーナツ形状の環状暗視野カメラ32の場合には、不要なものとされる。そのようなカメラにおいては、中央の穴が、カメラの不使用時に、電子束の通過を可能とする。)。
−カメラ30又は32を使用した撮像の代替として、また、例えばEELSモジュールとし得る分光装置34を起動することもできる。
−2a:真空ポートであり、この真空ポートは、真空チャンバ2の内部へと物品(構成部材、試験片)を導入するために/真空チャンバ2の内部から物品(構成部材、試験片)を導出するために、開放することができる、あるいは、真空ポート上に、例えば、補助デバイス/モジュールを取り付けることができる。顕微鏡Mは、必要に応じて、複数のそのようなポート2aを含むことができる。
−10a、10b:照明器6内の概略的に図示されたレンズ/光学要素。
−12:必要に応じて、試験片ホルダHあるいは少なくとも試験片Sを、グランドに対して所定電位へと、バイアスする(浮遊させる)ことを可能とする、電圧源。
−14:FPD又はCRTなどのディスプレイ。
−22a、22b:中央開口22b(ビームBの通過を可能とする)まわりに配置された複数の独立した検出セグメント(例えば、四分円)を含む、セグメント化された電子検出器22a。このような検出器は、例えば、試験片Sから放出される出力(二次又は後方散乱)電子束(の角度依存性)を調査するために使用することができる。
−前述のサンプルSの少なくとも一部上にわたって前述の荷電粒子ビームBを走査するステップと、
−第1検出器22を使用して、複数のサンプル位置におけるサンプルSからの第1タイプの放出に対応した検出器測定信号を取得するステップと、
−前述の検出器測定信号を処理するステップと、
−前述の検出器測定信号をデータとして表現するステップと、を含む。
Claims (13)
- 荷電粒子顕微鏡を使用してサンプルを検査するための方法であって、
−荷電粒子ビームを準備するとともに、サンプルを準備することと、
−前記サンプルの少なくとも一部上にわたって、前記荷電粒子ビームを走査することと、
−第1検出器を使用して、複数のサンプル位置における前記サンプルからの第1タイプの放出に対応した検出器測定信号を取得することと、
−一組をなす複数のデータクラス要素を準備することであって、各データクラス要素が、予想される検出器信号を、対応するサンプル情報値に対して関連付けする、準備することと、
−前記検出器測定信号を処理することであって、前記処理は、前記複数のサンプル位置の各々に関し、
○前記検出器測定信号を、前記一組をなす複数のデータクラス要素と比較することと、
○前記検出器測定信号が前記一組をなす複数のデータクラス要素の中の特定の1つに属する少なくとも1つの確率を決定することと、
○少なくとも1つのサンプル情報値と前記少なくとも1つの確率とを、前記複数のサンプル位置の各々に対して、割り当てることと、
を含む、前記検出器測定信号を処理することと、
−対応するサンプル情報値と対応する確率とを付随した前記複数のサンプル位置を、データとして表現することと、を含む、方法。 - 前記一組をなす複数のデータクラス要素を、少なくとも部分的に、事前に規定されたものとする、請求項1に記載の方法。
- 前記一組をなす複数のデータクラス要素を、少なくとも部分的に、アルゴリズムによって決定されるものとする、請求項1又は2に記載の方法。
- 前記一組をなす複数のデータクラス要素を、少なくとも部分的に、処理ユニットによって決定されるものとする、請求項1〜3のいずれか一項に記載の方法。
- 検出器測定信号が少なくとも2つのデータクラス要素へと分類される場合には、ベイジアン演算子を使用する、請求項1〜4のいずれか一項に記載の方法。
- データとして表現することは、前記データを含有した画像を提供するステップを含む、請求項1〜5のいずれか一項に記載の方法。
- HSV色空間を参照して、前記一組をなす複数のデータクラス要素を表現する一組をなす複数の色を準備し、前記一組をなす複数の色を、前記画像を提供するために使用するステップを含む、請求項6に記載の方法。
- 前記一組をなす複数の色は、前記データクラス要素を符号化するために、色相情報及び/又は彩度情報を使用する、請求項7に記載の方法。
- 前記一組をなす複数の色は、前記確率を符号化するために、色相情報及び/又は彩度情報を使用する、請求項7又は8に記載の方法。
- 前記確率の符号化は、対応する2つ以上のデータクラス要素に関連した2つ以上の色相を混合することを含む、請求項9に記載の方法。
- 第2検出器を使用して、前記サンプルの領域上にわたって走査された前記荷電粒子ビームに応答した前記サンプルからの第2タイプの放出を検出し、前記第2タイプの前記放出を前記画像内において符号化するために値情報を使用するステップを含む、請求項6〜10のいずれか一項に記載の方法。
- 前記第1検出器を、検出される前記第1タイプの放出に関するスペクトル情報を取得するために使用する、請求項1〜11のいずれか一項に記載の方法。
- 請求項1〜12のいずれか一項に記載の方法を使用してサンプルを検査するための荷電粒子顕微鏡であって、
−荷電粒子源と、最終プローブ形成レンズと、走査部材と、を含む光学カラムであるとともに、前記荷電粒子源から放出された荷電粒子ビームを、試験片上へと、焦点合わせする光学カラムと、
−前記最終プローブ形成レンズの下流側に配置されているとともに、前記試験片を保持するように構成された試験片ステージと、
−前記荷電粒子源から放出された前記荷電粒子ビームの入射に応答して前記試験片から放出される第1タイプの放出を検出するための第1検出器と、
−前記第1検出器に対して接続された、制御ユニット及び処理デバイスと、を含み、
前記荷電粒子顕微鏡は、請求項1〜12のいずれか一項又は複数に記載の方法を実行するように構成されている、荷電粒子顕微鏡。
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