JP2020181895A - Circuit board - Google Patents

Abstract

To provide a circuit board capable of preventing generation of mutual electrical interference (for example, electrical connection, electrical conduction, and so on) even in the case of contacting of conductive lines without an insulator layer arranged between conductive lines.SOLUTION: The circuit board, having a first conductive line 1 including a moebius compound and a second conductive line 2 including a non-moebius compound, is configured so that the first conductive line 1 and the second conductive line 2 are in mutual contact.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to circuit boards.

Conventional circuits, such as integrated circuits, usually have two or more leads. In such a circuit board, if it is not desired to branch or propagate the current or voltage signal of one wire between two adjacent wires to the other wire, it is necessary to arrange an insulating layer between the wires. (Patent Documents 1 and 2). For example, as shown in FIG. 8, it was necessary to arrange the insulating layer 103 between the first conductive line 101 and the second conductive line 102 on the substrate 110.

Japanese Unexamined Patent Publication No. 2008-283012 JP-A-2015-305478

According to the inventors of the present disclosure, the process of loading (or forming) the insulating layer 103 not only includes unstable elements such as variations in the thickness of the insulating layer, but also increases the cost due to the increase in the number of processes and the entire circuit board and device. It was found that the increase in thickness of the material becomes a problem.

The present disclosure prevents mutual electrical interference (eg, electrical connection and electrical conduction, etc.) even when the conductors are brought into contact with each other without arranging an insulating layer. It is an object of the present invention to provide a circuit board which can be used.

This disclosure is
The first conductive line containing the Mevius compound and
A second conductive line containing a non-Mobius compound,
Is a circuit board equipped with
The present invention relates to a circuit board in which the first conductive line and the second conductive line are in contact with each other.

According to the circuit board of the present disclosure, it is possible to prevent mutual electrical interference (for example, electrical connection and electrical conduction) even if the conductors are brought into contact with each other without arranging an insulating layer. .. For this reason, the circuit boards of the present disclosure can be designed with a sufficiently high degree of freedom and / or can be laid out with a sufficiently wide variation.

FIG. 1 is a schematic perspective view of an example of a circuit board according to the present disclosure. FIG. 2A is a schematic conceptual diagram for explaining a molecular band for explaining a Mobius compound and a non-Mobius compound. FIG. 2B is a schematic conceptual diagram for explaining the half-turn twist loop shape of the Mobius compound. FIG. 2C is a schematic conceptual diagram for explaining the half-turn twist loop shape of the Mobius compound. FIG. 2D is a schematic conceptual diagram for explaining the standard loop shape of the non-Mobius compound. FIG. 2E is a schematic conceptual diagram for explaining the standard loop shape of the non-Mobius compound. FIG. 3A is a schematic conceptual diagram showing the HOMO energy level and LUMO energy level of the Mobius compound and the non-Mobius compound, wherein the hole occupying the HOMO energy level of the Mobius compound is the HOMO energy of the non-Mobius compound. It is a conceptual diagram which shows that the movement (or transition) to a level is restricted. FIG. 3B shows a schematic perspective view for explaining a method of simulating the probability that holes remain in the first conductive line under the condition where an electric field is applied, as a variable ΔE. FIG. 3C is a graph showing the result of the simulation, and shows a graph showing the relationship of "probability of holes remaining in the first conductive line under the condition where an electric field is applied" to "ΔE". FIG. 4A is a schematic conceptual diagram showing the HOMO energy level and LUMO energy level of the Mobius compound and the non-Mobius compound, wherein the electron occupying the HOMO energy level of the Mobius compound is the LUMO energy level of the non-Mobius compound. It is a conceptual diagram which shows that the movement (or transition) to a place is restricted. FIG. 4B shows a schematic perspective view for explaining a method of simulating the probability that electrons remain in the first conductive line under the condition where an electric field is applied, as a variable ΔE. FIG. 4C is a graph showing the result of the simulation, and shows a graph showing the relationship of "probability of electrons remaining in the first conductive line under the condition where an electric field is applied" to "ΔE". FIG. 5A is a three-dimensional structural formula of the Mobius compound (1A). FIG. 5B is a three-dimensional structural formula of the non-Mobius compound (1B). FIG. 5C is a three-dimensional structural formula of the Mobius compound (2A). FIG. 5D is a three-dimensional structural formula of the non-Mobius compound (2B). FIG. 6A is a graph of wavelength-absorption spectra of Mobius compound (1A) and non-Mobius compound (1B). FIG. 6B is a graph of wavelength-absorption spectra of Mobius compound (2A) and non-Mobius compound (2B). In FIG. 7A, the holes injected into the HOMO level of the molecule located at the end of the wire A made of the Mobius compound do not move (or transition) to the wire B at the intersection with the wire B made of the non-Mobius compound. It is a schematic conceptual diagram of the intersection of the conducting wire A and the conductive wire B showing that it moves in the conducting wire A. FIG. 7B shows that the holes injected into the HOMO level of the molecule located at the end of the wire A made of the Mobius compound move (or transition) to the wire C at the intersection with the wire C made of the Mobius compound. It is a schematic conceptual diagram of the intersection of the conducting wire A and the conductive wire C shown. FIG. 8 is a schematic perspective view of an example of a circuit board according to the prior art.

[Circuit board]
The circuit board of the present disclosure includes a first conductive line 1 and a second conductive line 2 on the substrate 10, for example, as shown in FIG. In the circuit board of the present disclosure, although the first conductive line 1 and the second conductive line 2 are in contact with each other, mutual electrical interference is prevented. For example, although the first conductive line 1 and the second conductive line 2 are in contact with each other, neither electrical connection nor electrical conduction is avoided. The first conductive line 1 and the second conductive line 2 are in direct contact with each other without an insulating layer.

The first conductive line 1 contains a Mobius compound, and the second conductive line 2 contains a non-Mobius compound.

"Mobius" is a term used to describe a shape, and is a half-turn twisted loop shape obtained by connecting one end of a strip-shaped rectangle to the other end while rotating it by 180 °.

The "Mobius compound" includes, for example, an organic compound molecule that may also be referred to as a Mobius aromatic compound. When the Mobius compound regards a molecule (or a molecular chain or a connection of molecules) before binding between one end and the other end as a molecular band as shown in FIG. 2A, one end of the molecular band is shown in FIG. As shown in 2B and FIG. 2C, it is an organic compound molecule having a semi-rotating twisted loop shape, which is obtained by binding to the other end while rotating (or twisting) by 180 °. The half-turn twisted loop shape has one loop shape as a whole of the Mobius compound molecule. FIG. 2A is a schematic conceptual diagram for explaining a molecular band for explaining a Mobius compound and a non-Mobius compound. 2B and 2C are schematic conceptual diagrams for explaining the half-turn twist loop shape of the Mobius compound.

A "non-Mobius compound" is similar to a "Mobius compound" except that it has no twist, or even if it has a twist, it has a rotational twist of 360 ° x n (n is a positive integer). .. That is, a "non-Mobius compound" is a standard loop shape obtained by directly bonding one end of a molecular band to the other end without rotating (or twisting), as shown in FIGS. 2D and 2E. An organic compound molecule having a (also referred to as a non-rotating loop shape), or one end of a molecular band, is rotated (or twisted) by 360 ° × n (n is a positive integer) and bonded to the other end. Includes the resulting organic compound molecules having an integer rotational twist loop shape, or mixtures thereof. The standard loop shape and the integer rotation loop shape each have one loop shape as a whole of the non-Mobius compound molecule. The non-Mobius compound is preferably an organic compound molecule having a standard loop shape from the viewpoint of further preventing electrical interference and balancing the availability of the compound. 2D and 2E are schematic conceptual diagrams for explaining the standard loop shape of the non-Mobius compound.

In a preferred embodiment according to the present disclosure, the Mevius compound contained in the first conductive line 1 is a Mobius compound (Mobius compound) of a non-Mobius compound contained in the second conductive line 2.

In the Mobius compound and the non-Mobius compound of the present disclosure, the molecular band before the bond between one end and the other end is, specifically, as shown in FIG. 2A, the double bond and the single bond are alternately repeated. A planar body of an organic compound molecule containing a main chain, the total length in the repeating direction of the double bond and the single bond is the molecular length L ₁ , and the total length in the direction perpendicular to the repeating direction is the molecular width W _1. When, it is a planar body of an organic compound molecule having a relationship of L ₁ > W ₁ . At least the bond between one end and the other end of the main chain forms a half-turn twisted loop shape and a standard loop shape (and an integer rotation loop shape) loop shape in each of the Mobius compound and the non-Mobius compound. The organic compound molecule contains a typical element. In FIG. 2A, all of the double bonds and single bonds constituting the main chain of the organic compound molecule are formed between two carbon atoms, but each is independently formed between two carbon atoms. It may be formed between a carbon atom and a nitrogen atom, between a carbon atom and an oxygen atom, or between a carbon atom and a sulfur atom. The molecular band may be a planar body passing through at least one atom (preferably both atoms) forming each double bond of the main chain of the organic compound molecule, for example, R shown in FIG. 2A. ₁ to R ₆ substituents such as (or side chains) are not necessarily that they must be placed on a planar body of molecules zone (or plane). In the molecular band, the substituent (or side chain) is bonded to the main chain at a certain angle (for example, an acute angle) with respect to the planar body (or its plane) of the molecular band, for example. May be good. Specifically, in FIG. 2A, R _{1 to} R ₆ are independently arranged on the front side in the front-back direction of the figure with reference to the planar body of the molecular band (or its plane). It may be arranged on the back side. R _{1 to} R ₆ may be independently hydrogen atoms or any organic group. Of R _{1 to} R ₆ , two adjacent groups (eg, R ₁ and R ₃ , R ₃ and R ₅ , R ₂ and R ₄ , and R ₄ and R ₆ ) are bound to each other to form a main chain. An aromatic ring or a non-aromatic ring may be formed together with an atom (for example, a carbon atom, a nitrogen atom, a sulfur atom, etc.) to which the two groups are bonded. Here, the aromatic ring is a carbocycle or a heterocycle having aromaticity based on Hückel's law, and is, for example, an aromatic carbocycle such as a benzene ring; an aromatic ring such as a pyrrole ring, a thiophene ring, or a furan ring. Heterocycles and the like can be mentioned. The non-aromatic ring is a carbocycle or a heterocycle having no aromaticity based on Hückel's law, and is, for example, a non-aromatic carbocycle such as a cyclopentene ring, a cyclooctatetraene ring, or a cyclohexane ring. Non-aromatic heterocycles and the like.

More specifically, as shown in FIG. 2A, the Mobius compound of the present disclosure is a molecule that can be distinguished when the four corners that characterize the molecular band are designated as points A, B, A'and B'. It is an organic compound molecule formed as follows so that the front and back of the band are indistinguishable:
While rotating (or twisting) one end of the molecular band (the right end in FIG. 2B) by 180 ° as shown in FIG. 2B, points A'and B are overlapped (or combined) as shown in FIG. 2C. And overlap (or combine) points A and B'.

The Mobius compound has a structure in which a repetition of a double bond and a single bond goes around one loop along the main chain. In the present disclosure, a Mobius compound (particularly its main chain) usually has a π-electron system in which the number of π-electrons is represented by 4n. In other words, in the Mobius compound (particularly its main chain), the number of π electrons contained in the π-electron system of the atoms constituting the one loop is usually represented by 4n. n is an integer of 1 or more, particularly 2 or more, preferably an integer of 4 to 25, more preferably 4 to 20, still more preferably 4 to 15, from the viewpoint of further prevention of electrical interference. π-electrons include π-electrons derived from double bonds and π-electrons derived from unshared electron pairs of atoms other than carbon atoms (for example, nitrogen atom, sulfur atom, oxygen atom). Mobius compounds usually have 4 or more double bonds in one loop along the main chain, preferably 8-50, more preferably 8-40, from the standpoint of further preventing electrical interference. , More preferably it has 8-30 double bonds.

The non-Mobius compounds of the present disclosure are specifically described on the front and back sides of the molecular band when the four corners that characterize the molecular band are point A, point B, point A'and point B', as shown in FIG. 2A. Organic compound molecules formed as follows so as not to lose their distinction:
As shown in FIGS. 2D and 2E, the points A and A'are overlapped (or combined) and the points B and B'are overlapped as they are without rotating (or twisting) the ends of the molecular bands. Align (or combine). Alternatively, the end of the molecular band is rotated (or twisted) by 360 × k °, and the points A and A'are overlapped (or combined) and the points B and B'are overlapped (or combined) as they are. .. In this case, the distinction between the front and back of the molecular band is not lost. However, k is an integer of 0 or more.

Like the Mobius compound, the non-Mobius compound also has a structure in which the repetition of a double bond and a single bond goes around one loop along the main chain. However, the non-Mobius compound does not have the 180 ° twist that the Mobius compound has. Specifically, the non-Mobius compound has no twist, or even if it has a twist, it has a rotational twist of 360 ° × n (n is a positive integer). Hereinafter, the non-Mobius compound will be described in more detail. Like the Mobius compound, the non-Mobius compound has a structure in which the repetition of a double bond and a single bond goes around one loop along the main chain. In the present disclosure, a non-Mobius compound (particularly its main chain) usually has a π-electron system in which the number of π-electrons is represented by 4n. In other words, in the non-Mobius compound (particularly its main chain), the number of π electrons contained in the π-electron system of the atoms constituting the one loop is usually represented by 4n. n is an integer of 1 or more, particularly 2 or more, preferably an integer of 4 to 25, more preferably 4 to 20, still more preferably 4 to 15, from the viewpoint of further prevention of electrical interference. Non-Mobius compounds usually have 4 or more double bonds in one loop along the main chain, preferably 8 to 50, more preferably 8 to 40, from the standpoint of further preventing electrical interference. It has 8 to 30 double bonds, more preferably 8 to 30.

In non-Mobius compounds, due to the energy barrier, the single and double bonds that make up the main chain do not rotate around the bond axis. In other words, in FIG. 2E, the arrangement of the front side (outside) and the back side (inside) of the molecular bands in which the front and back sides of the non-Mobius compound can be distinguished are reversed due to the energy barrier. There is no reversal. Note that the coupling shaft, and Sankounisuru to Figure 2A, substantially parallel to the molecular long L ₁ direction, and is that the axis passing through the main chain (or near). Therefore, in the non-Mobius compound shown in FIG. 2E, R ₁ , R ₃ and R ₅ shown in FIG. 2A and R ₂ , R ₄ and R ₆ are distinguished from each other in the molecular width W ₁ direction with the main chain as a boundary. They do not lose their distinction in rotation around the binding axis of the backbone.

The first conductive line containing the Mobius compound and the second conductive line containing the non-Mobius compound are electrically interfered with each other even if they are brought into contact with each other without arranging an insulating layer based on the following mechanism. It is thought that this can be prevented.

As shown in FIGS. 3A and 4A, the HOMO energy level of the Mobius compound is reasonably higher than the HOMO energy level of the non-Mobius compound, and the LUMO energy level of the non-Mobius compound is higher than the HOMO energy level of the Mobius compound. Is also moderately high. That is, the HOMO energy level of the Mobius compound is more appropriate than the HOMO energy level of the non-Mobius compound by imparting "twist" to the standard loop shape of the non-Mobius compound to obtain the Mobius compound having a half-turn twist loop shape. Higher and moderately lower than the LUMO energy level of non-Mobius compounds. As a result, for the following reasons (1) and (2), even if the first conductive line and the second conductive line are brought into contact with each other without arranging an insulating layer between them, mutual electrical interference can be prevented. It is considered to be. FIG. 3A is a schematic conceptual diagram showing the HOMO energy level and LUMO energy level of the Mobius compound and the non-Mobius compound, wherein the hole occupying the HOMO energy level of the Mobius compound is the HOMO energy of the non-Mobius compound. It is a conceptual diagram which shows that the movement (or transition) to a level is restricted. FIG. 4A is a schematic conceptual diagram showing the HOMO energy level and LUMO energy level of the Mobius compound and the non-Mobius compound, wherein the electron occupying the HOMO energy level of the Mobius compound is the LUMO energy level of the non-Mobius compound. It is a conceptual diagram which shows that the movement (or transition) to a place is restricted. In FIGS. 3A and 4A, the valence bands formed by the first conductive line containing the Mobius compound and the second conductive line containing the non-Mobius compound are indicated by reference numerals "21" and "31", respectively. The conduction bands formed by the first conductive line containing the Mobius compound and the second conductive line containing the non-Mobius compound are indicated by reference numerals "22" and "32", respectively. The electrons occupying the HOMO energy level of the Mobius compound and the non-Mobius compound are indicated by reference numerals "23" and "33", respectively. The holes that occupy the HOMO energy level of the Mobius compound are indicated by the symbol "24". The LUMO energy levels of Mobius and non-Mobius compounds are indicated by reference numerals "25" and "35", respectively.

Reason (1):
As shown in FIG. 3A, the HOMO energy level of the Mobius compound is reasonably higher than the HOMO energy level of the non-Mobius compound, so that the HOMO of the non-Mobius compound with holes 24 occupying the HOMO energy level of the Mobius compound. Movement (or transition) to energy levels is restricted. As a result, leakage of current from the first conductive line containing the Mevius compound to the second conductive line containing the non-Mobius compound is prevented.

・ Simulation 1
Simulation 1 was performed by the method shown in FIG. 3B. That is, the probability that holes remain in the first conductive line 1 under the condition where an electric field is applied is simulated as a variable ΔE, and the result is shown in FIG. 3C. ΔE is similar to ΔE shown in FIG. 3A, that is, shows the difference (eV) between the HOMO energy level of the Mobius compound and the HOMO energy level of the non-Mobius compound. FIG. 3B shows a schematic perspective view for explaining a method of simulating the probability that holes remain in the first conductive line 1 under the condition where an electric field is applied, as a variable ΔE.

Specifically, as shown in FIG. 3B, when an electric field is applied to the first conductive line 1 and the second conductive line 2, the hole 24 occupies the HOMO energy level of the Mobius compound contained in the first conductive line (FIG. 3B). The probability that (see 3A) remains at the HOMO energy level of the Mobius compound without migrating (or transitioning) to the HOMO energy level of the non-Mobius compound was simulated for various ΔEs.
Such simulations, as simulation 2 below, various Eg ₂ (e.g., 0.5 eV, 0.6 eV, 0.7 eV, 0.8 eV, 0.9 eV and 1.0 eV) was also performed on , The same graph as in FIG. 3C is shown. Eg ₂ is the difference (eV) between the LUMO energy level and the HOMO energy level of the non-Mobius compound. )

The conditions for Simulation 1 are shown below:
The inventors predicted the hole migration path by the Monte Carlo method.
As a method for calculating the electronic path, the method described in The Journal of Physical Chemistry C Organic Electronics 119 (2015) 6344, which was described by Tahereh Ghane et al., Was applied.
In calculating the hole migration path, 640 molecules of the target Mobius compound and 640 molecules of the non-Mobius compound were arranged in a grid pattern so that the distance between the molecules was 3 Å (angstrom). The lead wire made of the Mobius compound shown in FIG. 3B is formed by arranging four molecules thereof in the x direction, 20 molecules in the y direction, and eight molecules in the z direction. The lead wire made of the non-Mobius compound of FIG. 3B 2 is formed by arranging four molecules in the x direction, eight in the y direction, and 20 in the z direction. FIG. 7A shows a schematic perspective view of a device in which the Mobius compound is arranged on the lead wire 1 of FIG. 3B and the non-Mobius compound is arranged on the lead wire 2 of FIG. 3B.

式中、βは減衰因子、ｒ_ｉ，ｊは分子ｉから他の分子ｊへの距離である。
ｋ_Ｂはボルツマン定数である。
Ｔは温度、Ａは比例定数である。
ΔＥ１は分子ｊのＨＯＭＯ準位のエネルギーから分子ｉのＨＯＭＯ準位のエネルギーを差し引いた値である。 The hole transition probability _kij from one molecule i to another molecule j is given by the following equation (p1).

In the formula, β is an damping factor, and ri _{and j} are the distances from the molecule i to another molecule j.
k _B is the Boltzmann constant.
T is the temperature and A is the constant of proportionality.
ΔE1 is a value obtained by subtracting the energy of the HOMO level of the molecule i from the energy of the HOMO level of the molecule j.

Which molecule the hole moves from a certain molecule i is determined by calculating the transition probability between all the molecules adjacent to the molecule i and drawing the molecule to which the hole moves by the Monte Carlo method.
After the holes are transferred from one molecule i to another molecule j, the next step is to determine the destination of the holes from the molecule j by the same method as before. By repeating this process, the hole conduction path was determined.

Holes are injected into the HOMO level of the molecule existing at the end of the lead wire 1 in FIG. 3B in the y direction, and an electric field of 0.0877 V / nm in the negative y direction and 0.0877 V / nm in the negative z direction is applied. The charge transfer path of holes was determined by the above-mentioned method when the holes were applied. FIG. 7A is injected diagonally downward to the left, that is, when an electric field is applied in the −y direction and the −z direction, the HOMO level of the molecule existing at the end of the lead wire 1 of FIG. 3B in the y direction is injected. The holes show 100 patterns of trajectories that have passed through.

As a result of simulation 1, as shown in FIG. 3C, when ΔE is 0.28 eV or more (particularly 0.30 eV or more), the probability that holes remain in the first conductive line 1 is infinitely close to 100%, and the first It has been clarified that the leakage of current from the conductive line 1 to the second conductive line 2 is almost certainly prevented. FIG. 3C is a graph showing the result of simulation 1, and shows a graph showing the relationship of "probability of holes remaining in the first conductive line under the condition where an electric field is applied" to "ΔE". The graph in Fig. 3C (actual: color copy) will be submitted as a reference material in the property submission form.

Reason (2):
As shown in FIG. 4A, the LUMO energy level of the non-Mobius compound is moderately higher than the HOMO energy level of the Mobius compound, so that the LUMO energy of the non-Mobius compound of the electrons 23 occupying the HOMO energy level of the Mobius compound. Movement (or transition) to the level is restricted. As a result, leakage of current from the first conductive line containing the Mevius compound to the second conductive line containing the non-Mobius compound is prevented.

・ Simulation 2
Simulation 2 was performed by the method shown in FIG. 4B. That is, the probability that an electron remains in the first conductive line 1 under the condition where an electric field is applied is simulated as a variable ΔE, and the result is shown in FIG. 4C. In addition, such a simulation was performed for various Eg ₂ . Eg ₂ is the difference (eV) between the LUMO energy level and the HOMO energy level of the non-Mobius compound. ΔE is similar to ΔE shown in FIG. 4A, that is, shows the difference (eV) between the HOMO energy level of the Mobius compound and the HOMO energy level of the non-Mobius compound. FIG. 4B shows a schematic perspective view for explaining a method of simulating the probability that electrons remain in the first conductive line 1 under the condition where an electric field is applied, as a variable ΔE.

Specifically, as shown in FIG. 4B, when an electric field is applied to the first conductive line 1 and the second conductive line 2, the electron 23 occupies the HOMO energy level of the Mobius compound contained in the first conductive line (FIG. 4A). see), without moving (or transition) in LUMO energy level of the non-Mobius compound, the probability of remaining in the HOMO energy level of Mobius compounds, with respect to various △ E and Eg _2, was simulated.

The conditions for Simulation 2 are shown below:
The inventors predicted the electron movement path by the Monte Carlo method.
As a method for calculating the electronic path, the method described in The Journal of Physical Chemistry C Organic Electronics 119 (2015) 6344, which was described by Tahereh Ghane et al., Was applied.
In calculating the electron transfer path, 640 molecules of the target Mobius compound and 640 molecules of the non-Mobius compound were arranged in a grid pattern so that the distance between the molecules was 3 Å (angstrom). In the lead wire made of the Mobius compound of 1 in FIG. 4B, four molecules thereof were arranged in the x direction, 20 in the y direction, and eight in the z direction. In the lead wire made of the non-Mobius compound of 2 in FIG. 4B, four molecules thereof were arranged in the x direction, eight in the y direction, and 20 in the z direction. FIG. 7A corresponds to a schematic perspective view of a device in which the Mobius compound is arranged on the lead wire 1 of FIG. 4B and the non-Mobius compound is arranged on the lead wire 2 of FIG. 4B.

式中、βは減衰因子、ｒ_ｉ，ｊは分子ｉから他の分子ｊへの距離である。
ｋ_Ｂはボルツマン定数である。
Ｔは温度、Ａは比例定数である。
ΔＥ２は分子ｊのＬＵＭＯ準位のエネルギーから分子ｉのＨＯＭＯ準位のエネルギーを引いた値である。 The electron transition probability _kij from one molecule i to another molecule j is given by the equation (p2).

In the formula, β is an damping factor, and ri _{and j} are the distances from the molecule i to another molecule j.
k _B is the Boltzmann constant.
T is the temperature and A is the constant of proportionality.
ΔE2 is the value obtained by subtracting the energy of the HOMO level of the molecule i from the energy of the LUMO level of the molecule j.

Which molecule an electron moves from a certain molecule i is determined by calculating the transition probability between all the molecules adjacent to the molecule i and drawing a lottery for the molecule to which the hole is transferred by the Monte Carlo method.
After the electron is transferred from one molecule i to another molecule j, the next step is to determine the destination of the electron from the molecule j by the same method as before. By repeating this process, the electron conduction path was determined.

An electric field of 0.0877 V / nm in the negative y direction and 0.0877 V / nm in the negative z direction is injected into the HOMO level of the molecule existing at the end of the 1 lead wire in FIG. 4B in the positive y direction. The charge transfer path of the electron was determined by the above method in the case.

As a result of simulation 2, as shown in FIG. 4C, when Eg ₂ is 0.6 eV or more, the probability that electrons remain on the first conductive line 1 is as close as 100% (99.99999 ...%). It has been clarified that the leakage of current from the first conductive line 1 to the second conductive line 2 can be almost certainly prevented.
Specifically, when Eg ₂ is 0.5 eV, there is no range of ΔE in which the probability of electrons remaining on the first conductive line 1 is 100%.
When Eg ₂ was 0.6 eV and ΔE was 0.28 to 0.32 eV (particularly 0.30 to 0.32 eV), the probability that electrons remained on the first conductive line 1 was infinitely close to 100%. ..
When Eg ₂ is 0.7 eV and ΔE is 0.28 to 0.42 eV (particularly 0.30 to 0.42 eV), the probability that electrons remain in the first conductive line 1 is infinitely close to 100%. ..
When Eg ₂ is 0.8 eV and ΔE is 0.28 to 0.52 eV (particularly 0.30 to 0.52 eV), the probability that electrons remain in the first conductive line 1 is infinitely close to 100%. ..
When Eg ₂ is 0.9 eV and ΔE is 0.28 to 0.62 eV (particularly 0.30 to 0.62 eV), the probability that electrons remain in the first conductive line 1 is infinitely close to 100%. ..
When Eg ₂ is 1.0 eV and ΔE is 0.28 to 0.72 eV (particularly 0.30 to 0.72 eV), the probability that electrons remain in the first conductive line 1 is infinitely close to 100%. ..
From these results, when Eg ₂ is x (eV) (x = 0.6 eV or more, particularly 0.6 to 5.0 eV), ΔE is 0.28 to “x −0.28” eV (particularly 0). When it is .30 to "x-0.28" eV), the probability that electrons remain on the first conductive line 1 is 100%, and the leakage of current from the first conductive line 1 to the second conductive line 2 is complete. It became clear that it was definitely prevented. FIG. 4C is a graph showing the results of simulation 2, and shows a graph showing the relationship of "probability of electrons remaining in the first conductive line under the condition where an electric field is applied" to "ΔE".

The HOMO energy level of Mobius compounds is usually −6.0 to −1.0 eV, especially −5.5 to −1.0 eV.
Eg ₁ of the Mobius compound is usually 1.0 to 5.0 eV, especially 1.5 to 5.0 eV. Eg ₁ is the difference (eV) between the LUMO energy level and the HOMO energy level of the Mobius compound.
The HOMO energy level of non-Mobius compounds is usually -6.5 to -1.0 eV, especially -5.5 to -1.0 eV.
Eg ₂ of the non-Mobius compound is usually 0.6 to 5.0 eV, especially 0.6 to 4.0 eV.
ΔE is 0.28 eV or more (particularly 0.30 eV or more), and usually 0.28 to 2.0 eV, particularly 0.28 to 1.0 eV.

Specific examples of the Mobius compound and the non-Mobius compound are shown below.

The Mevius compound represented by the chemical formula (1A) (hereinafter, may be referred to as the Mevius compound (1A)) (the three-dimensional structural formula of the compound is shown in FIG. 5A; the three-dimensional structural formula of FIG. 5A (actual: color). Copy) as a reference material in the property submission form);

A non-Mobius compound represented by the chemical formula (1B) (hereinafter, may be referred to as a non-Mobius compound (1B)) (the three-dimensional structural formula of the compound is shown in FIG. 5B; the three-dimensional structural formula of FIG. 5B (actual product). : Color copy) as a reference material in the property submission form);

The Mevius compound represented by the chemical formula (2A) (hereinafter, may be referred to as the Mevius compound (2A)) (the three-dimensional structural formula of the compound is shown in FIG. 5C; the three-dimensional structural formula of FIG. 5C (actual: color). Copy) as a reference material in the property submission form);

A non-Mobius compound represented by the chemical formula (2B) (hereinafter, may be referred to as a non-Mobius compound (2B)) (the three-dimensional structural formula of the compound is shown in FIG. 5D; the three-dimensional structural formula of FIG. 5D (actual product). : Color copy) as a reference material in the property submission form);

Regarding the specific examples of the above-mentioned Mobius compound and non-Mobius compound, the HOMO energy levels, Eg ₁ , Eg ₂ and ΔE were as follows. For these values, the values obtained by performing the simulation 3 described later are used:

Mobius compound (1A) and non-Mobius compound (1B): Eg ₁ = 3.10 eV, Eg ₂ = 3.78 eV, HOMO energy level of Mobius compound (1A) = -5.04 eV, non-Mobius compound (1B) HOMO energy level = −5.32 eV, and ΔE = 0.29 eV.

Mobius compound (2A) and non-Mobius compound (2B): Eg ₁ = 3.10 eV, Eg ₂ = 3.78 eV, HOMO energy level of Mobius compound (2A) = -4.98 eV, non-Mobius compound (2B) HOMO energy level = −5.28 eV, and ΔE = 0.29 eV.

・ Simulation 3
For structural optimization of Mobius compounds and non-Mobius compounds and calculation of HOMO levels, Gaussian (Gaussian 09, Revision E.01, M. J. Fricks, G. W. Tracks, H. B. Schlegel, G. E. Scuseria, M. A. Robb, J. R. Cheeseman, G. Scalmani, V. Barone, B. Mennucci, G. A. K. Case, G. A. Peters. Li, HP Hratchan, A. F. Izmaylov, J. Bloino, G. Zheng, J. L. Sonnenberg, M. Hada, M. Ehara, K. Toyota, R. Toyota, R. Toyota, R. Ishida, T. Nakajima, Y. Honda, O. Kitao, H. Nakai, T. Vreven, JA Montgommery, Jr., J. E. Peralta, F. Oglia, F. Oglia, F. O. Heid, E. Brothers, K. N. Kudin, V. N. Staroverov, R. Kobayashi, J. Normand, K. Raghavacari, A. Rendell, J. C. M. Bar, J. C. Bar. M. Cossi, N. Rega, J. M. Millam, M. Klene, J. E. Knox, J. B. Cross, V. Bakken, C. Adamo, J. Jamallo, R. Gompert. Stratmann, O. Yazyev, A. J. Austin, R. Cammi, C. Pomelli, J. W. Ochterski, R. L. Martin, K. Morokuma, V. G. G. Zakrzew. Salvador, J.J. Dannenberg, S. Daprich, AD Daniels, O. Farkas, J.B. Fo resman, J. et al. V. Ortiz, J. et al. Cioslowski, and D. J. Fox, Gaussian, Inc. , Wallingford CT, 2009. )It was used. The B3LYP method (AD Becke, J. Chem. Phys. 1993, 98, 5648-5652.) Was used for the density functional theory, and 6-31G * was used for the default function.

The Mobius compound contained in the first conductive line 1 and the non-Mobius compound contained in the second conductive line 2 usually have a structural isomer relationship with each other. In the present specification, the relationship of structural isomers is not particularly limited as long as mutual electrical interference is prevented even by mutual contact between the first conductive line and the second conductive line. The structural isomer relationship may include, for example, not only the following relationship 1 but also the following relationship 2:
Relationship 1: The composition formula of the entire molecule is the same between the Mobius compound contained in the first conductive line 1 and the non-Mobius compound contained in the second conductive line 2, but the bonding relationships between atoms are different from each other. Relationship;
Relationship 2: The composition formula of the main chain (or skeleton) of the molecule between the Mobius compound contained in the first conductive line 1 and the non-Mobius compound contained in the second conductive line 2 is equal to each other, but the side chain (side chain). Or a relationship in which the types of substituents) are different from each other.
The relationship between the structural isomers of the Mobius compound contained in the first conductive line 1 and the non-Mobius compound contained in the second conductive line 2 is preferably the above relationship 1.

The Mobius compound and the non-Mobius compound are preferably the Mobius compound (1A) and the non-Mobius compound (1B), respectively, from the viewpoint of further preventing electrical interference.
In other words, the Mobius compound (1A) is an organic compound molecule having a semi-rotating twisted loop shape, which is obtained by binding one end of a polyacetylene derivative to the other end while rotating it by 180 °.
The non-Mobius compound (1B) is, in other words, an organic compound molecule having a standard loop shape, which is obtained by directly bonding one end of a polyacetylene derivative to the other end without rotation.
In the polyacetylene derivatives constituting the Mobius compound (1A) and the non-Mobius compound (1B), a part of the carbon atoms constituting the polyacetylene derivative is at least one selected from the group consisting of nitrogen atoms, boron atoms, and oxygen atoms. It may be substituted with a species atom. Further, a part of the hydrogen atoms constituting the polyacetylene derivative is substituted with at least one organic group selected from the group consisting of halogen atoms such as iodine atom, fluorine atom, chlorine atom and bromine atom and alkyl group. You may. The alkyl group may be an alkyl group having 1 to 20 carbon atoms, preferably 1 to 10, and more preferably 1 to 5. Specific examples of the alkyl group include methyl group, ethyl group, n-propyl, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group and octyl. Examples include a group, a nonyl group, a decyl group and the like.
In the Mobius compound (1A) and the non-Mobius compound (1B), a part of carbon atoms and / or a part of hydrogen atoms constituting the polyacetylene derivative are substituted with the above atoms, so that the first conductive line and the second Manufacture of conductive lines becomes easy. By such substitution, the solubility of the Mevius compound (1A) and the non-Mevius compound (1B) in the solvent can be improved, and as a result, the first conductive line and the second conductive line can be easily produced.

Mobius and non-Mobius compounds are usually conductive.
The fact that the Mobius compound has conductivity means that when the first conductive line 1 having a content of 100% by weight of the Mobius compound is formed, the first conductive line 1 has conductivity. At this time, the conductivity of the first conductive line 1 is, for example, 10 ^-1 Ω · cm or less, particularly 10 ^{-12 -10 -1} Ω · cm, preferably 10 ^{-12 -10 -8} Ω · cm. is there.
The fact that the non-Mobius compound has conductivity means that when the second conductive line 2 having a content of 100% by weight of the non-Mevius compound is formed, the second conductive line 2 has conductivity. .. At this time, the conductivity of the second conductive line 2 is, for example, 10 ^-1 Ω · cm or less, particularly 10 ^{-12 -10 -1} Ω · cm, preferably 10 ^{-12 -10 -8} Ω · cm. is there.

The content of the Mobius compound is usually 10% by weight or more based on the total amount of the first conductive line, and is preferably 30% by weight or more, more preferably 50% by weight or more, from the viewpoint of further preventing electrical interference. It is more preferably 70% by weight or more, particularly preferably 90% by weight or more, and most preferably 100% by weight. The first conductive line preferably contains a Mobius compound as a main component. The main component means a component (particularly, a component contained in an amount of 50% by weight or more) contained most in terms of weight among the components (that is, materials) constituting the first conductive line.

The content of the non-Mobius compound is usually 10% by weight or more with respect to the total amount of the second conductive line, and is preferably 30% by weight or more, more preferably 50% by weight or more from the viewpoint of further preventing electrical interference. It is more preferably 70% by weight or more, particularly preferably 90% by weight or more, and most preferably 100% by weight. The second conductive line preferably contains a non-Mobius compound as a main component. The main component means a component (particularly, a component contained in an amount of 50% by weight or more) contained most in terms of weight among the components (that is, materials) constituting the second conductive line.

As the first conductive line and second conductive line is a material also contain other respective Mobius compounds and non Mobius compounds, for example, large poly large _H 2 O, O2, N2, and HOMO-LUMO gap of the HOMO-LUMO gap Alkanes ethane, propane, butane, pentane, hexane, heptane, octane, nonane, decane, undecane, dodecane, or HOMO levels of Mobius compounds that are 0.40 eV or more lower than the HOMO levels of Mobius compounds. Examples thereof include non-conductive polymers having a LUMO level higher than the position by 0.60 eV or more (for example, polyamide, polyimide, polyamideimide, polyester).

The circuit board of the present disclosure can be manufactured by forming a first conductive line 1 and a second conductive line 2 on the substrate 10. In FIG. 1, the first conductive line 1 is formed in direct contact with the second conductive line 2, but the second conductive line 2 is in direct contact with the first conductive line 1. It may be formed.

The first conductive line 1 can be formed by applying a paste containing a Mobius compound, a solvent and other desired materials in a predetermined arrangement and drying. The first conductive line 1 can also be formed by depositing a mixture containing a Mobius compound and other desired materials in a predetermined arrangement using a mask or the like. The thickness and width of the first conductive line 1 are not particularly limited, and may be, for example, 1 μm to 10 mm, particularly 10 μm to 1 mm independently of each other.

The second conductive line 2 can be formed by applying a paste containing a non-Mevius compound, a solvent and other desired materials in a predetermined arrangement and drying. The second conductive line 2 can also be formed by depositing a mixture containing a non-Mobius compound and other desired materials in a predetermined arrangement using a mask or the like. The thickness and width of the second conductive line 2 are not particularly limited, and may be, for example, 1 μm to 10 mm, particularly 10 μm to 1 mm independently of each other.

The substrate 10 may be made of any material as long as it is non-conductive. The conductivity of the substrate 10 is, for example, 10 ³ Ω · cm or more, particularly 10 ³ to 10 ¹⁰ Ω · cm, preferably 10 ⁴ to 10 ¹⁰ Ω · cm. The material constituting the substrate is not particularly limited as long as it has non-conductive properties, and examples thereof include glass, non-conductive polymers (for example, polyamide, polyimide, polyamide-imide, and polyester).

In the circuit board of the present disclosure, the first conductive line 1 overlaps with the second conductive line 2. In other words, at least a part of the first conductive line 1 overlaps with at least a part of the second conductive line 2 in a top view while being in contact with each other without interposing an insulating layer between them. A part of the first conductive line 1 may overlap with a part of the second conductive line 2, or the whole of the first conductive line 1 may overlap with the whole of the second conductive line 2. The fact that a part of the first conductive line 1 overlaps with a part of the second conductive line 2 means that, for example, as shown in FIG. 1, the first conductive line intersects with the second conductive line. The fact that all of the first conductive line 1 overlaps with all of the second conductive line 2 means that the other is formed only on one of the first conductive line 1 or the second conductive line 2.

In the circuit board of the present disclosure, the first conductive line 1 and the second conductive line 2 do not have an insulating layer interposed therebetween, and even if they are in contact with each other and overlap each other, they interfere with each other (for example, electricity). Target connection and electrical continuity, etc.) can be prevented. For this reason, the circuit boards of the present disclosure can be designed with a sufficiently high degree of freedom and / or can be laid out with a sufficiently wide variation. The layout is a circuit layout such as wiring routing.

In the circuit board of the present disclosure, even if they are brought into contact with each other without interposing an insulating layer between the first conductive line 1 and the second conductive line 2, mutual electrical interference (for example, electrical connection and electrical connection) (Electrical conduction, etc.) can be prevented. Therefore, even if the first conductive line 1 and the second conductive line 2 have different polarities from each other, a short circuit between the first conductive line 1 and the second conductive line 2 can be prevented. For example, in a battery or the like, even if the first conductive line 1 electrically connected to one electrode of the positive electrode or the negative electrode and the second conductive line 2 electrically connected to the other electrode come into contact with each other, A short circuit between the first conductive line 1 and the second conductive line 2 is prevented.

The circuit board of the present disclosure may be provided in any electronic device. Since the first conductive line and the second conductive line can be easily manufactured in the circuit board of the present disclosure, the electronic device can also be easily manufactured. The electronic device is not particularly limited as long as it is an electronic device provided with a circuit board, and examples thereof include a thin film transistor (TFT).

The first conductive line 1 and the second conductive line 2 can also be used as a gate electrode, a source electrode and / or a drain electrode in the TFT.

[Synthesis of Mobius compounds and non-Mobius compounds]
Mobius compounds and non-Mevius compounds can be synthesized by the following methods. For example, a known chemical reaction such as a Diel's-Alder reaction or a photoisomerization reaction is used to synthesize a twisted Mobius compound and an untwisted non-Mobius compound, and then the obtained mixed compound is column chromatographed. A non-Mobius compound as a main product and a Mobius compound as a by-product can be obtained by purification and separation according to a known separation method such as imaging. When a non-Mevius compound is commercially available, the non-Mevius compound is purified and separated according to a known separation method similar to the above to obtain a non-Mevius compound as a main product and a Mevius compound as a by-product. Can be obtained. At this time, the yield of the Mobius compound as a by-product may be usually 1% by weight or less, particularly 0.1% by weight or less, based on the total amount.

For example, the Mobius compound (1A) and the non-Mobius compound (1B) are described in D.I. It can be synthesized according to the method described in Ajami et al., Nature 426 (2003) 820. First, tetradehydrodianthracene and syn-tricyclooctadiene are combined in a benzene solvent by a Diels-Alder reaction, and the compound is obtained by irradiating with ultraviolet rays with a high-pressure mercury lamp. The resulting synthesis is then purified and separated by liquid chromatography to give the Mobius compound (1A) as a by-product and the non-Mobius compound (1B) as the main product.

Further, for example, the Mevius compound (2A) and the non-Mevius compound (2B) can be synthesized according to the following method. First, 2,6'-dimethyl-9,9', 10,10'-tetradehydrodianthracene and syn-tricyclooctadiene are combined in a benzene solvent by the Diels-Alder reaction, and a high-pressure mercury lamp is used. A compound is obtained by irradiating with ultraviolet rays. The resulting synthesis is then purified and separated by liquid chromatography to give the Mobius compound (2A) as a by-product and the non-Mobius compound (2B) as the main product.

[Identification of Mobius compounds and non-Mobius compounds]
For example, the Mobius compound (1A) and the non-Mobius compound (1B) can be identified according to the absorption spectrum shown in FIG. 6A. The red peak is a peak derived from the Mobius compound (1A), and the green peak is a peak derived from the non-Mobius compound (1B). Specifically, the Mevius compound 1A can be identified if there is an absorption spectrum near 490 nm.

Further, for example, the Mobius compound (2A) and the non-Mobius compound (2B) can be identified according to the absorption spectrum shown in FIG. 6B. The green peak is a peak derived from the Mobius compound (2A), and the red peak is a peak derived from the non-Mobius compound (2B). Specifically, the Mevius compound 2A can be identified if there is an absorption spectrum near 490 nm.

The graphs of FIGS. 6A and 6B (actual: color copy) will be submitted as reference materials in the property submission form.

(Example 1)
By the conduction path analysis of holes by the Kinetic Monte Carlo method, the holes injected into the HOMO level of the molecule located at the end of the lead wire A made of the Mobius compound are at the intersection with the lead wire B made of the non-Mobius compound. It was calculated to move in the lead wire A without moving (or transitioning) to the lead wire B.

This will be described in detail with reference to FIGS. 7A and 7B.
In FIG. 7A, the holes injected into the HOMO level of the molecule located at the end of the wire A made of the Mobius compound do not move (or transition) to the wire B at the intersection with the wire B made of the non-Mobius compound. It is a schematic conceptual diagram (simulation result) of the intersection of the conducting wire A and the conductive wire B, which shows that it moves in the conducting wire A. A schematic conceptual diagram (actual: color copy) showing the simulation result of FIG. 7A is submitted as a reference material in the property submission form.
FIG. 7B shows that the holes injected into the HOMO level of the molecule located at the end of the wire A made of the Mobius compound move (or transition) to the wire C at the intersection with the wire C made of the Mobius compound. It is a schematic conceptual diagram (simulation result) of the intersection of the conducting wire A and the conductive wire C shown. A schematic conceptual diagram (actual: color copy) showing the simulation result of FIG. 7B is submitted as a reference material in the property submission form.

In FIG. 7A, a lead wire A made of a Mobius compound parallel to the y-axis direction covers a lead wire B made of a non-Mobius compound (indicated by a light blue dot) parallel to the z-axis direction to form an intersection. At the intersection, the lead wire A and the lead wire B are in direct contact with each other.
In FIG. 7B, a lead wire A made of a Mobius compound parallel to the y-axis direction (indicated by a blue dot) covers a lead wire C made of a Mobius compound parallel to the z-axis direction to form an intersection. At the intersection, the lead wire A and the lead wire C are in direct contact with each other.

In FIGS. 7A and 7B, the red or blue line is a hole injected into the right end of the upper lead wire A when an electric field is applied diagonally downward to the left, that is, in the −z and −y directions. Shows 100 patterns of trajectories that have passed through. That is, the red or blue line shows the locus of 100 times when 100 injections are performed. The red line shows the trajectory of the holes that have just been injected, and the blue line shows the vicinity of the end point of the hole trajectory. Therefore, the red line and the blue line suggest the current flow (energization).

In FIGS. 7A and 7B, when an electric field is applied diagonally downward to the left, that is, in the −z and −y directions, at the intersection formed by the conducting wires A and C made of the same Mobius compound of FIG. 7B, The path of the injected holes changes from a direction parallel to the y-axis to a direction parallel to the z-axis depending on the applied electric field.

At the intersection formed by the conducting wires A and B composed of the Mobius compound and the non-Mobius compound in FIG. 7A, the injected holes are HOMO of the Mobius compound even though an electric field is applied diagonally downward. The energy level of the holes staying in the orbit is located at a higher energy level than the energy level of the holes staying in the HOMO orbit of the non-Mobius compound. As a result, the holes cannot transition from the lead wire A made of the Mobius compound to the lead wire B made of the non-Mobius compound, and proceed as it is in the lead wire A made of the Mobius compound in the −y axis direction. That is, the lead wire A made of the Mobius compound proceeds in the −y axis direction even if it is in contact with the lead wire B made of the non-Mobius compound without the insulating layer.

In the hole conduction path analysis (corresponding to FIG. 7A) by the Kinetic Monte Carlo method in this example, the following conditions were used:
ΔE = 0.29eV, T = 300K, β = 1.0 / Å, A = 1.0;
Materials used: Mevius compound (1A) and non-Mobius compound (1B).

In addition, in the hole conduction path analysis (corresponding to FIG. 7B) by the Kinetic Monte Carlo method in this example, the following conditions were used:
ΔE = 0.0eV, T = 300K, β = 1.0 / Å, A = 1.0;
Material used: Mevius compound (1A).

The circuit board of the present disclosure is useful as an electric circuit such as an integrated circuit, a battery circuit, or the like.

1: 1st conduction line 2: 2nd conduction line 10: Substrate 21: Valence band formed by the first conduction line 22: Conduction band formed by the first conduction line 23: Occupy the HOMO energy level of the Mobius compound Electrons 24: Holes occupying the HOMO energy level of the Mobius compound 25: LUMO energy level of the Mobius compound 31: Valence band formed by the second conduction line 32: Conduction band formed by the second conduction line 33: Non Electrons occupying the HOMO energy level of Mobius compounds 35: LUMO energy levels of non-Mobius compounds

Claims (13)

The first conductive line containing the Mevius compound and
A second conductive line containing a non-Mobius compound,
Is a circuit board equipped with
A circuit board in which the first conductive line and the second conductive line are in contact with each other. The circuit board according to claim 1, wherein the Mobius compound and the non-Mobius compound have a structural isomer relationship with each other. The first conductive line contains the Mevius compound as a main component and contains.
The circuit board according to claim 1 or 2, wherein the second conductive line contains the non-Mobius compound as a main component. The circuit board according to any one of claims 1 to 3, wherein at least a part of the first conductive line overlaps with the second conductive line. The circuit board according to any one of claims 1 to 4, wherein the first conductive line intersects with the second conductive line. The circuit board according to any one of claims 1 to 5, wherein the first conductive line and the second conductive line have different polarities from each other. The circuit board according to any one of claims 1 to 6, wherein the HOMO energy level of the Mobius compound is 0.28 eV or more higher than the HOMO energy level of the non-Mobius compound. The circuit board according to any one of claims 1 to 7, wherein the LUMO energy level of the non-Mobius compound is 0.6 eV or more higher than the HOMO energy level of the non-Mobius compound. When the molecule before binding between one end and the other end is regarded as a molecular band, the Mobius compound is obtained by binding one end of the molecular band to the other end while rotating it by 180 °. Is an organic compound molecule with a half-turn twisted loop shape.
The non-Mobius compound is an organic compound molecule having a standard loop shape obtained by directly binding one end of the molecular band to the other end without rotating, and 360 of the one end of the molecular band. Any of claims 1-8, which is an organic compound molecule having an integer rotational twist loop shape, or a mixture thereof, obtained by binding to the other end while rotating ° × n (n is a positive integer). The circuit board described in. The Mevius compound is obtained by binding one end of a polyacetylene derivative to the other end while rotating it by 180 °, and has a semi-rotating twisted loop shape, and is represented by the chemical formula (1A). And
The non-Mevius compound is obtained by directly bonding one end of a polyacetylene derivative to the other end without rotation, and has a standard loop shape, and is a non-Mobius compound (1B) represented by the chemical formula (1B). ), The circuit board according to any one of claims 1 to 8.

In the polyacetylene derivatives constituting the Mobius compound (1A) and the non-Mobius compound (1B), a part of the carbon atoms constituting the polyacetylene derivative is at least selected from the group consisting of nitrogen atoms, boron atoms, and oxygen atoms. It is substituted with one atom and / or part of the hydrogen atom constituting the polyacetylene derivative is substituted with at least one organic group selected from the group consisting of halogen atom and alkyl group. The circuit board according to claim 10. The Mevius compound is a Mevius compound (2A) represented by the chemical formula (2A).
The circuit board according to claim 11, wherein the non-Mevius compound is a non-Mevius compound (2B) represented by the chemical formula (2B).

An electronic device comprising the circuit board according to any one of claims 1 to 12.

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