JP2020167347A - Semiconductor device and apparatus - Google Patents

Abstract

To provide an advantageous technology for improving the reliability of a semiconductor device.SOLUTION: A device plate 10 is disposed between a facing plate 20 and a circuit plate 30. The circuit plate 30 has an overlapping portion 31 that overlaps with the device plate 10 and a non-overlapping portion 32 that does not overlap the device plate 10. A resin member 16 in contact with the non-overlapping portion 32 of the device plate 10 and the circuit plate 30 is in contact with a contact region 21 of a side surface 200 of the facing plate 20 and not in contact with a non-contact region 22 of the side surface 200 of the facing plate 20.SELECTED DRAWING: Figure 1

Description

The present invention relates to a semiconductor device.

In a semiconductor device, electronic components are mounted on a circuit board or the like for supporting the electronic components. A technique for satisfactorily mounting electronic components including a plurality of plates is required. Patent Document 1 discloses a semiconductor device in which a chip formed of a first substrate and a second substrate is mounted on a mounting substrate to form an underfill.

WO16 / 203967

Since the reliability of the semiconductor device is insufficient with the technique of Patent Document 1, it is an object of the present invention to provide an advantageous technique for improving the reliability of the semiconductor device.

The means for solving the above-mentioned problems is a semiconductor device, the first plate constituting the electronic device, the second plate facing the first plate, and the third plate supporting the first plate. A semiconductor device comprising the above, wherein the first plate is arranged between the second plate and the third plate, and the third plate is a first portion overlapping the first plate and the above. A resin member having a second portion that does not overlap the first plate and that contacts the first plate and the second portion of the third plate is further provided, and the resin member is a side surface of the second plate. It is characterized in that it contacts the first region and does not contact the second region on the side surface of the second plate.

According to the present invention, it is possible to provide an advantageous technique for improving the reliability of a semiconductor device.

The schematic diagram explaining the semiconductor device. The schematic diagram explaining the semiconductor device. The schematic diagram explaining the device.

Hereinafter, an example of a mode for carrying out the present invention will be described with reference to the drawings. In the following description and drawings, common reference numerals are given to common configurations across a plurality of drawings. Therefore, a plurality of drawings will be referred to each other to explain a common configuration, and a configuration with a common reference numeral will be omitted as appropriate.

1 (a) is a schematic cross-sectional view of the semiconductor device, FIG. 1 (b) is an enlarged view of a portion A of FIG. 1 (a), and FIG. 1 (c) is a schematic plan view of the semiconductor device. The schematic cross-sectional view of the semiconductor device corresponds to the cross section of the semiconductor device in line BB of FIG. 1 (c).

The semiconductor device includes a device plate 10 that constitutes the electronic device 11, a counter plate 20 that faces the device plate 10, and a support plate 30 that supports the device plate 10. The device plate 10 is arranged between the facing plate 20 and the support plate 30. The support plate 30 has an overlapping portion 31 that overlaps the device plate 10 and a non-overlapping portion 32 that does not overlap the device plate 10. The semiconductor device further includes a resin member 16 that comes into contact with the non-overlapping portion 32 of the device plate 10 and the support plate 30.

The facing plate 20 has two main surfaces 201 and 202 and a side surface 200 continuous with the main surfaces 201 and 202. The main surface 201 can be referred to as an upper surface, an outer surface, and a front surface, and the main surface 202 can be referred to as a lower surface, an inner surface, and a back surface. The facing plate 20 is, for example, a protective plate that protects the electronic device 11, and is, for example, a translucent plate that transmits light to the electronic device 11 or light from the electronic device 11. The facing plate 20 can also form an electronic device. The support plate 30 is a circuit board or a wiring board. For example, although it is a printed circuit board having a rigid board, it may be a printed wiring board having a flexible board. As shown in FIG. 1 (c), the support plate 30 of this example is a circuit plate having a connector component 34 and a passive component 33. In one example, the electronic device 11 is an imaging device, and in another example, the electronic device 11 is a display device, but the present invention is not limited to this and may be a general semiconductor device.

The resin member 16 contacts the contact region 21 of the side surface 200 of the facing plate 20 and does not contact the non-contact region 22 of the side surface 200 of the facing plate 20. The contact area 21 is located between the non-contact area 22 and the support plate 30. As described above, in this example, the contact area 21 and the non-contact area 22 are arranged in the Z direction, but the contact area 21 and the non-contact area 22 may be arranged in the X direction or the Y direction. The facing plate 20 is thicker than the device plate 10. In the direction Z in which the facing plate 20 and the device plate 10 overlap, the length of the contact region 21 is smaller than the length of the non-contact region 22. The resin member 16 does not cover the surface of the facing plate 20 opposite to the side of the device plate 10.

In this example, the resin member 16 extends between the device plate 10 and the overlapping portion 31 of the support plate 30. The resin member located between the device plate 10 and the overlapping portion 31 of the support plate 30 may be made of a resin material different from the resin member 16 that contacts the facing plate 20, the device plate 10, and the non-overlapping portion 32. .. The semiconductor device further includes a conductive member 15 that electrically connects the device plate 10 and the support plate 30. A conductive member 15 that electrically connects the device plate 10 and the support plate 30 is arranged between the device plate 10 and the support plate 30. The resin member 16 comes into contact with the conductive member 15.

As shown in FIG. 1B, the dimension W of the contact region 21 in which the resin member 16 contacts the side surface of the facing plate 20 in the direction Z in which the facing plate 20 and the device plate 10 overlap is the facing plate 20 and the device plate. It is 0.8 to 1.2 times the distance D between 10 and 10. The dimension T of the portion of the resin member 16 that covers the side surface of the facing plate 20 in the normal direction X of the side surface of the facing plate 20 is 0.8 to 1.2 of the distance D between the facing plate 20 and the device plate 10. It is double. The distance D between the facing plate 20 and the device plate 10 is smaller than the distance G between the device plate 10 and the support plate 30.

In this example, the device plate 10, the facing plate 20, and the joining member 14 constitute the electronic component 100. When the electronic device 11 is an optical device such as an imaging device or a display device, the facing plate 20 uses a light-transmitting glass plate, crystal plate, or resin plate. The thickness of the facing plate 20 is, for example, 100 to 1000 μm, preferably about 250 to 750 μm. The thickness of the device plate 10 is, for example, 10 to 1000 μm, preferably 50 to 500 μm. The device plate 10 may be thinner than the facing plate 20. The electronic component 100 is an electronic component that has been individualized through a WL-CSP (Wafer Level Chip Size Package) process. WLCSP is a technology in which a package assembly process is performed with a plurality of semiconductor elements collectively formed on a wafer, and then the semiconductor elements are individually separated as electronic components through processes such as backside wiring. The device plate 10 has a front surface and a back surface. A MOS transistor, a wiring layer, and an interlayer insulating film layer are formed on the surface side of the device plate 10 by using a general semiconductor process, and a color filter and a microlens are further formed on the surface side thereof. The electronic device 11 has a structure of an imaging device called a so-called surface-illuminated image sensor (FSI). The electronic device 11 may have a structure of an imaging device called a back-illuminated image sensor (BSI). Further, the electronic component 100 may be a laminated image sensor, in which case the image processor can be arranged on the device plate 10 and the image sensor can be arranged on the facing plate 20.

The facing plate 20 is separated from the device plate 10. A joining member 14 for joining the facing plate 20 and the device plate 10 is arranged between the facing plate 20 and the device plate 10. The joining member 14 is made of a light-transmitting resin having adhesive performance, and is, for example, a thermosetting acrylic material having an elastic modulus of 0.5 to 2.0 GPa. The thickness of the joining member 14 is, for example, 30 to 50 μm. The joining member 14 may be made of another resin as long as it has light transmittance and adhesiveness, and an epoxy resin, a urethane resin, a silicone resin, or the like can also be preferably used. Further, not only a thermosetting type resin but also a photocurable type resin such as ultraviolet rays may be used. The joining member 14 is made of a resin material different from that of the resin member 16. The elastic modulus of the resin member 16 is preferably higher than the elastic modulus of the joining member 14. The joining member 14 may be a member in which inorganic insulating materials such as silicon oxide are joined to each other on the joining surface. Further, the joining member 14 may be a member forming a hybrid joining in which the joining of insulators and the joining of conductors coexist on the joining surface.

On the back surface side of the device plate 10, a rewiring layer 13 is formed by a photo process and copper plating in the WL-CSP process in order to drive the electronic device 11 formed on the front surface side. The rewiring layer 13 is electrically connected from the back surface side to the front surface side via a through electrode 12 (TSV: Through Silicon Via).

In the formation of the through electrode 12, a so-called Bosch process is used to perform etching treatment in the vertical direction Z from the back surface side to the front surface side of the silicon wafer to be the device plate 10, and the pad electrode formed on the front surface side is formed. Form a through hole to reach. As the etching gas for the Bosch process, a mixed gas of SF ₆ and C ₄ F ₈ and O ₂ can be used. Then, a conductive material to be connected to the pad electrode is formed in the through hole to form the through electrode 12.

Although detailed description of the internal structure of the through electrode 12 is omitted, the interlayer film is made of an insulating material using a silicon oxide film or a silicon nitride film so that the device plate 10 and the copper plating formed by the rewiring layer 13 do not short-circuit. Is forming. Further, in the copper plating treatment, titanium is formed as an adhesion layer by using a sputtering method or the like, and copper is formed as a seed layer for plating, and then formed by an electrolytic plating method or the like.

The electronic component 100 is a support in which electrical components such as a connector component 34 and a passive component 33 are formed via a conductive member 15 such as a solder bump connected to a rewiring layer 13 formed on the back surface side of the device plate 10. It is electrically connected to the plate 30.

The support plate 30 is a printed wiring board, which is a so-called printed circuit board, and has a wiring pattern printed on a rigid substrate such as a glass epoxy board or a composite substrate. At this time, the electronic component 100 and the support plate 30 are solder-bonded using a nitrogen reflow device at about 230 ° C., but if the linear expansion coefficients of the electronic component 100 and the support plate 30 are different, warpage occurs after the solder bonding. It ends up. The device plate 10 used in the electronic component 100 is made of a silicon plate, and the facing plate 20 is typically made of a transparent substrate such as a glass substrate. Therefore, the coefficient of linear expansion of the electronic component 100 and the support plate 30 deviates from each other, and the electronic component 100 is fixed in a warped state.

For example, since the electronic component 100 has a coefficient of linear expansion of 3 to 5 ppm and the support plate 30 has a coefficient of linear expansion of 8 to 16 ppm, the electronic component 100 may warp so as to have a convex shape with respect to the support plate 30 after solder bonding. There is sex. When the mounting reliability test is carried out in such a warped state, a large temperature change is applied depending on the conditions of the reliability test, so that a large stress is applied to the interface between the conductive member 15 which is a solder bump and the rewiring layer 13. Cracks will occur, which may result in poor electrical continuity. When the mounting reliability test is carried out in such a state, a large temperature change is applied depending on the conditions of the reliability test, so that a large stress is applied to the interface between the conductive member 15 which is a solder bump and the rewiring layer 13, and cracks occur. It expands and becomes electrically poor.

Therefore, the resin member 16 is injected (underfilled) into the gap between the device plate 10 and the support plate 30. The elastic modulus of the resin member 16 has a value larger than the elastic modulus of the joining member 14, and for example, an epoxy-based material having an elastic modulus of 5 to 20 GPa after curing, for example, about 10 GPa was selected. Conductive members 15 made of solder bumps are formed at intervals in the gaps between the device plate 10 and the support plate 30. Therefore, when injecting the resin member 16, the viscosity of the resin member 16 is lowered by heating the electronic component 100 at a temperature of 100 ° C. or lower using a hot plate or the like, and the resin member 16 is injected so as not to generate holes. Let's fill it. After that, the resin member 16 is additionally coated on the side surface of the electronic component 100 by using a dispenser or the like. At that time, it is formed so as to cover the side surface of the device plate 10 and the side surface of the adhesive joining member 14, and further formed so as to come into contact with the contact region 21 which is a part of the side surface 200 of the facing plate 20. For example, a semiconductor device is completed by thermosetting in an oven at 200 ° C.

As shown in FIG. 1B, the contact region 21 which is a part of the side surface 200 of the facing plate 20 at this time is a region of the side surface 200 in the height direction Z. The dimension W of the contact region 21 may be formed to be 0.8 to 1.2 times the thickness T, which is the dimension of the joining member 14 on the side surface 200. The thickness T of the resin member 16 formed on the side surface of the joining member 14 (in the direction perpendicular to the side surface of the joining member 14) is substantially the same as the thickness D of the joining member 14 (0.8 to 1. of the thickness D). It is formed so as to have a thickness of (twice).

In such a structure, if the elastic modulus of the resin member 16 is larger than the elastic modulus of the joining member 14, the deformation of the joining member 14 can be suppressed even under a condition of large temperature change such as a mounting reliability test. it can. Further, since a part of the resin member 16 also restrains the facing plate 20, stress is not applied to the joining member 14, and cracks can be suppressed.

If the entire area of the side surface 200 of the facing plate 20 is covered with the resin member 16, if the amount of the resin member 16 is further large, the facing plate 20 is damaged due to the magnitude of the stress, and the facing plate 20 is chipped or the like. There is a possibility that the destruction will occur. The same applies even if the entire region of the main surface 201 of the facing plate 20 is covered with the resin member 16. Therefore, the resin member 16 is prevented from coming into contact with the non-contact region 22 of the side surface 200 of the facing plate 20. As a result, it is possible to prevent damage to the facing plate 20. Further, when the resin member 16 covers the main surface 201 of the facing plate 20, the light incident on the facing plate 20 is blocked or diffusely reflected, so that the optical characteristics are deteriorated. Therefore, if the electronic device 11 is an optical device, it is preferable that the resin member 16 does not cover the main surface 201 of the facing plate 20 with the resin member 16.

Regarding the mounting reliability of the semiconductor device in which the electronic component 100 in which the device plate 10 and the facing plate 20 are bonded is mounted on the support plate 30, the influence of the warp cannot be ignored due to the deviation of the coefficient of linear expansion. Further, the resin member 16 can be filled between the electronic component 100 and the support plate 30 so as not to increase the influence of the warp. For the electronic component 100 having a structure in which the device plate 10 and the facing plate 20 are bonded together, the relationship with the resin used for bonding may be important.

If the structure is such that the resin member 16 does not come into contact with the side surface 200 of the facing plate 20, the joining member 14 used for bonding is directly exposed, which may weaken the moisture resistance. Further, for the electronic component 100 in which only the lower surface is fixed in a warped state, the upper part (opposing plate 20) is not fixed, so that the temperature change is large. Under the reliability test condition, the warp changes between the upper part and the lower part of the electronic component 100. Since the amounts are different, the life of mounting reliability is shortened.

When all the side surfaces of the electronic component 100 are covered with the resin member 16, cracks in the device plate 10 are suppressed, but in a state where the device plate 10 is fixed by the resin member 16, they face each other via the joining member 14. The binding force on the plate 20 side becomes weaker. Therefore, stress is applied to the electronic component 100, which causes damage and deteriorates the quality of the semiconductor device.

Further, if the amount of the resin member 16 covering the side surface of the joining member 14 used for bonding the device plate 10 and the facing plate 20 is insufficient, a crack may occur inside the joining member 14 as a result of that portion. .. When a crack is generated in the joining member 14, moisture in the atmosphere permeates from the crack, the adhesion strength is lowered, and the device plate 10 and the facing plate 20 may be peeled off.

As described above, in the semiconductor device in which the device plate 10 and the facing plate 20 are mounted on the support plate 30, the resin member 16 comes into contact with the contact region 21 which is a part of the side surface 200 of the facing plate 20. Therefore, it is possible to provide a semiconductor device with high mounting reliability.

2 (a) and 2 (b) are other examples of semiconductor devices. In this example, the portion different from the example of FIG. 1 is the connection method between the electronic component 100 and the support plate 30, which will be described in detail below.

In this example, the electronic component 100 includes a device plate 10 and a facing plate 20, and a MOS transistor, a wiring layer, and an interlayer insulating layer are formed on the surface side of the device plate 10 by using a general semiconductor process. In this example, a display device using a liquid crystal element, an organic EL element, or the like is formed. The surface side of the device plate 10 is divided into an element region in which the electronic device 11 is formed and a peripheral region in which the external connection terminal 17 outside the element region is arranged.

Further, in this example, the device plate 10 and the facing plate 20 are bonded by a light-transmitting joining member 14 having adhesive performance. In this example, the adhesive bonding member 14 is formed to have a thickness of about 1 to 20 um, and is made of an acrylic material having an elastic modulus of 0.5 to 2.0 GPa that is cured and bonded by thermosetting or ultraviolet curing. It is a material. Further, since the electronic component 100 is a display element, the facing plate 20 uses a light-transmitting glass substrate having a thickness of about 500 um.

Further, it is necessary to expose the external connection terminal 17 for electrical connection to the external connection terminal 17, and the size of the facing plate 20 is formed smaller than that of the device plate 10. In this example, the external connection terminal 17 is exposed from one side, but the present invention is not limited to this form, and there is no problem in a structure in which the external connection terminal 17 is exposed on a plurality of other sides.

The device plate 10 and the support plate 30 are locally temporarily fixed to the support plate 30 by using an adhesive member 9 for temporary fixing formed on the back surface side of the device plate 10. The adhesive member 9 for temporary fixing used here is a resin material having a low elastic modulus such as silicon rubber. In this example, a material of about 0.5 to 2.0 MPa can be used as the adhesive member 9. The adhesive member 9 is thin, and the distance D between the facing plate 20 and the device plate 10 is larger than the distance G between the device plate 10 and the support plate 30.

The support plate 30 is a printed wiring board, which is a so-called printed circuit board, and has a wiring pattern printed on a rigid substrate such as a glass epoxy board or a composite substrate.

In this example, the electronic component 100 has a linear expansion coefficient of 3 to 5 ppm, and the support plate 30 has a linear expansion coefficient of 8 to 16 ppm. However, since the adhesive member 9 is for temporary fixing, the temperature is 100 ° C. or lower even when thermosetting. It is a material that cures. Therefore, at this stage, the influence of the linear expansion coefficient between the device plate 10 and the support plate 30 is not large, and since the adhesive resin for temporary fixing is a material having a low elastic modulus, the electronic component 100 is in a warped form. Is almost nonexistent.

In such a state, the external connection terminal 17 formed on the surface side of the device plate 10 of the electronic component 100 is electrically connected to the surface of the support plate 30 by a wire bonding method.

However, if nothing is done, the device plate 10 and the support plate 30 are separated from each other in consideration of the weak mechanical strength of the conductive member 18 which is a bonding wire and the moisture resistance of the adhesive bonding member 14 used in the electronic component 100. The resin member 16 is injected (underfilled) into the gap. The elastic modulus of the resin member 16 may have a value larger than the elastic modulus of the joining member 14, and an epoxy-based material may be selected so that the elastic modulus after curing is about 10 GPa.

Regarding the injection and filling method of the resin member 16, the same method as described in the example of FIG. 1 was performed. At this time, in order to protect the conductive member 18 which is a bonding wire electrically connected by the wire bonding method, the resin member 16 is formed by using a method such as potting. Then, the resin member 16 is formed so as to cover the side surface of the device plate 10 and the side surface of the joining member 14 with respect to the side surface of the electronic component 100 as described in the example of FIG. Further, a desired semiconductor device is completed by forming the resin member 16 so as to cover a part of a region on the side surface of the facing plate 20 and then heat-curing the resin member 16 in an oven at about 200 ° C.

A part of the side surface region of the facing plate 20 is a region in the height direction Z of the side surface, and the height thereof is formed so as to be substantially equal to the thickness of the adhesive joining member 14. Further, the thickness of the resin member 16 formed on the side surface of the adhesive joining member 14 (in the direction perpendicular to the side surface of the adhesive resin) is also formed to be substantially the same thickness as that of the adhesive joining member 14.

By forming the resin member 16 so as to have such a structure, the elastic modulus of the resin member 16 is larger than the elastic modulus of the adhesive joining member 14, and therefore, under conditions such as a mounting reliability test in which the temperature changes significantly. Also, the deformation of the adhesive joining member 14 can be suppressed. Further, since a part of the resin member 16 also restrains the facing plate 20, stress is not applied to the adhesive joining member 14, and cracks can be suppressed.

From the above, in the semiconductor device of this example, the electronic component 100 in which the device plate 10 and the facing plate 20 are bonded by the joining member 14 is mounted on the support plate 30. Then, the resin member 16 comes into contact with a part of the side surface of the facing plate 20, the side surface of the device plate 10, and the main surface of the support plate 30. By doing so, it becomes possible to provide a semiconductor device having high mounting reliability.

Further, since the resin member 16 is also in contact with the conductive member 18 (bonding wire) that electrically connects the electronic component 100 and the support plate 30, it is possible to improve the environmental resistance and strength resistance. Become.

In this example, in the manufacturing process of a highly reliable semiconductor device, a part of the description is given when a general semiconductor process is used and the materials and materials used are not deviated from the gist of the present invention. It can be changed. FIG. 2B is a modification of FIG. 2A, in which the support plate 30 and the device plate 10 are connected by using a flexible wiring member 19 instead of the conductive member 18 as the bonding wire.

FIG. 3 shows an example of the device 60 including the semiconductor device shown in FIG. 1 or 2. The device 60 is an electronic device such as a smartphone or a personal computer, an imaging device such as a still camera or a video camera, a display device such as a television or a display, and a transportation device such as a vehicle, a ship, or an aircraft. Alternatively, the device 60 is an office device such as a printer or a scanner, a multifunction device, an industrial device such as a robot, a medical device for an endoscope or radiology, and an analytical device such as a microscope.

In the example of FIG. 3, the device 60 is a camera. The device 60 as a camera includes an image sensor IS and a display DP. The device 60 as a camera may include a fixed or interchangeable lens LNS. The image sensor IS can be the semiconductor device of the present embodiment, and the display DP can be the semiconductor device of the present embodiment. The display may be an electronic viewfinder. The device 60 includes a holding member 50 that holds the semiconductor device (image sensor IS and display DP) of the present embodiment. The holding member 50 can hold the support plate 30 of the semiconductor device (image sensor IS or display DP). The holding member 50 is fixed to another component MB or housing of the device 60. The image sensor IS and the display DP are electrically connected to other component MBs via wiring members FPC1 and FPC2 such as a flexible wiring board.

The embodiments described above can be appropriately modified without departing from the ideas of the present invention.

11 Electronic device 10 Device plate 20 Opposing plate 30 Support plate 31 Overlapping part 32 Non-overlapping part 14 Joining member 16 Resin member 200 Side surface 21 Contact area 22 Non-contact area

Claims (20)

The first plate that makes up the electronic device and
The second plate facing the first plate and
A semiconductor device including the third plate that supports the first plate.
The first plate is arranged between the second plate and the third plate.
The third plate has a first portion that overlaps the first plate and a second portion that does not overlap the first plate.
A resin member that comes into contact with the first plate and the second portion of the third plate is further provided.
The resin member contacts the first region of the side surface of the second plate and does not contact the second region of the side surface of the second plate.
A semiconductor device characterized by this. The semiconductor device according to claim 1, wherein the first region is located between the second region and the third plate. The semiconductor device according to claim 1 or 2, wherein the length of the first region is smaller than the length of the second region in the direction in which the first plate and the second plate overlap. The semiconductor device according to any one of claims 1 to 3, wherein the resin extends between the first plate and the first portion of the third plate. The semiconductor according to any one of claims 1 to 4, wherein a joining member for joining the first plate and the second plate is arranged between the first plate and the second plate. apparatus. The semiconductor device according to any one of claims 1 to 5, wherein the first plate is separated from the second plate. The dimension of the region where the resin member contacts the side surface of the first plate in the direction in which the first plate and the second plate overlap is 0, which is the distance between the first plate and the second plate. The semiconductor device according to any one of claims 1 to 6, which is 8 to 1.2 times. The dimension of the portion of the resin member covering the side surface of the second plate in the normal direction of the side surface of the second plate is 0.8 to 1. The distance between the first plate and the second plate. The semiconductor device according to any one of claims 1 to 7, which is twice as large. The semiconductor device according to any one of claims 1 to 8, wherein the resin member does not cover the surface of the second plate opposite to the side of the first plate. The semiconductor device according to any one of claims 1 to 9, wherein the second plate is thicker than the first plate. The semiconductor device according to any one of claims 1 to 10, wherein the distance between the first plate and the second plate is smaller than the distance between the first plate and the third plate. The semiconductor device according to any one of claims 1 to 10, wherein the distance between the first plate and the second plate is larger than the distance between the first plate and the third plate. The semiconductor device according to any one of claims 1 to 12, further comprising a conductive member that electrically connects the first plate and the third plate, and the resin member comes into contact with the conductive member. The semiconductor device according to any one of claims 1 to 13, wherein the second plate is a translucent plate and the third plate is a wiring plate. The semiconductor device according to claim 5, wherein the joining member is made of a resin material different from the resin member. The semiconductor device according to claim 15, wherein the elastic modulus of the resin member is higher than the elastic modulus of the joining member. According to any one of claims 1 to 16, a conductive member for electrically connecting the first plate and the third plate is arranged between the first plate and the third plate. The semiconductor device described. The semiconductor device according to any one of claims 1 to 17, wherein the electronic device is an imaging device. The semiconductor device according to any one of claims 1 to 17, wherein the electronic device is a display device. The semiconductor device according to any one of claims 1 to 19.
A device including a holding member for holding the semiconductor device.

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