JP2020166124A - Photosensitive resin composition, cured film, method for producing cured film, and display device - Google Patents
Photosensitive resin composition, cured film, method for producing cured film, and display device Download PDFInfo
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- JP2020166124A JP2020166124A JP2019066799A JP2019066799A JP2020166124A JP 2020166124 A JP2020166124 A JP 2020166124A JP 2019066799 A JP2019066799 A JP 2019066799A JP 2019066799 A JP2019066799 A JP 2019066799A JP 2020166124 A JP2020166124 A JP 2020166124A
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- Prior art keywords
- photosensitive resin
- resin composition
- compound
- mass
- group
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 75
- 229920005989 resin Polymers 0.000 claims abstract description 43
- 239000011347 resin Substances 0.000 claims abstract description 43
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000003960 organic solvent Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 83
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 52
- 239000004642 Polyimide Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 26
- 229920001721 polyimide Polymers 0.000 claims description 26
- 125000004432 carbon atom Chemical group C* 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 21
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 125000003545 alkoxy group Chemical group 0.000 claims description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 7
- 125000004185 ester group Chemical group 0.000 claims description 7
- 125000006289 hydroxybenzyl group Chemical group 0.000 claims description 4
- 238000004811 liquid chromatography Methods 0.000 claims description 4
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- BXXUUZSHXORWRC-UHFFFAOYSA-N 4-[[3-[(2,4-dihydroxyphenyl)methyl]-2-hydroxy-5-methylphenyl]methyl]benzene-1,3-diol Chemical compound OC=1C(CC=2C(=CC(O)=CC=2)O)=CC(C)=CC=1CC1=CC=C(O)C=C1O BXXUUZSHXORWRC-UHFFFAOYSA-N 0.000 claims description 2
- MJJHCPUDQIVVIR-UHFFFAOYSA-N 4-[[5-tert-butyl-3-[(2,4-dihydroxyphenyl)methyl]-2-hydroxyphenyl]methyl]benzene-1,3-diol Chemical compound OC=1C(CC=2C(=CC(O)=CC=2)O)=CC(C(C)(C)C)=CC=1CC1=CC=C(O)C=C1O MJJHCPUDQIVVIR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- -1 phenol compound Chemical class 0.000 abstract description 45
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 48
- 238000003786 synthesis reaction Methods 0.000 description 48
- 239000002966 varnish Substances 0.000 description 37
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 34
- 239000000126 substance Substances 0.000 description 30
- 229920002577 polybenzoxazole Polymers 0.000 description 17
- 230000035945 sensitivity Effects 0.000 description 17
- 239000000203 mixture Substances 0.000 description 15
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 8
- 229920005575 poly(amic acid) Polymers 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 230000002378 acidificating effect Effects 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 150000004985 diamines Chemical class 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- 238000001914 filtration Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- HTSGKJQDMSTCGS-UHFFFAOYSA-N 1,4-bis(4-chlorophenyl)-2-(4-methylphenyl)sulfonylbutane-1,4-dione Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C(C(=O)C=1C=CC(Cl)=CC=1)CC(=O)C1=CC=C(Cl)C=C1 HTSGKJQDMSTCGS-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- KUMMBDBTERQYCG-UHFFFAOYSA-N 2,6-bis(hydroxymethyl)-4-methylphenol Chemical compound CC1=CC(CO)=C(O)C(CO)=C1 KUMMBDBTERQYCG-UHFFFAOYSA-N 0.000 description 4
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 3
- UIBRZPKYAKGQQZ-UHFFFAOYSA-N 4-ethyl-2,6-bis(hydroxymethyl)phenol Chemical compound CCC1=CC(CO)=C(O)C(CO)=C1 UIBRZPKYAKGQQZ-UHFFFAOYSA-N 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical class CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 3
- 229930040373 Paraformaldehyde Natural products 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 150000001805 chlorine compounds Chemical class 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 125000004427 diamine group Chemical group 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- 229920002866 paraformaldehyde Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 3
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 2
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical compound C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 description 2
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 2
- 229940018563 3-aminophenol Drugs 0.000 description 2
- IJFXRHURBJZNAO-UHFFFAOYSA-N 3-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1 IJFXRHURBJZNAO-UHFFFAOYSA-N 0.000 description 2
- MXLMTQWGSQIYOW-UHFFFAOYSA-N 3-methyl-2-butanol Chemical compound CC(C)C(C)O MXLMTQWGSQIYOW-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 2
- SIBBGGADHQDMHI-UHFFFAOYSA-N 4-tert-butyl-2,6-bis(hydroxymethyl)phenol Chemical compound CC(C)(C)C1=CC(CO)=C(O)C(CO)=C1 SIBBGGADHQDMHI-UHFFFAOYSA-N 0.000 description 2
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 2
- 241000202785 Calyptronoma Species 0.000 description 2
- FKLJPTJMIBLJAV-UHFFFAOYSA-N Compound IV Chemical compound O1N=C(C)C=C1CCCCCCCOC1=CC=C(C=2OCCN=2)C=C1 FKLJPTJMIBLJAV-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910003849 O-Si Inorganic materials 0.000 description 2
- 229910003872 O—Si Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 150000001242 acetic acid derivatives Chemical class 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 125000001142 dicarboxylic acid group Chemical group 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- NLFBCYMMUAKCPC-KQQUZDAGSA-N ethyl (e)-3-[3-amino-2-cyano-1-[(e)-3-ethoxy-3-oxoprop-1-enyl]sulfanyl-3-oxoprop-1-enyl]sulfanylprop-2-enoate Chemical compound CCOC(=O)\C=C\SC(=C(C#N)C(N)=O)S\C=C\C(=O)OCC NLFBCYMMUAKCPC-KQQUZDAGSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 125000003709 fluoroalkyl group Chemical group 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 238000004128 high performance liquid chromatography Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 2
- 150000002763 monocarboxylic acids Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000000045 pyrolysis gas chromatography Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229940124530 sulfonamide Drugs 0.000 description 2
- RYNQKSJRFHJZTK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) acetate Chemical compound COC(C)(C)CCOC(C)=O RYNQKSJRFHJZTK-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- GOLSFPMYASLXJC-UHFFFAOYSA-N 2-(dimethylamino)ethyl acetate Chemical compound CN(C)CCOC(C)=O GOLSFPMYASLXJC-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical class CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- UZSDRHVOBLQYCX-UHFFFAOYSA-N 2-amino-6-hydroxybenzoic acid Chemical compound NC1=CC=CC(O)=C1C(O)=O UZSDRHVOBLQYCX-UHFFFAOYSA-N 0.000 description 1
- ZMCHBSMFKQYNKA-UHFFFAOYSA-N 2-aminobenzenesulfonic acid Chemical compound NC1=CC=CC=C1S(O)(=O)=O ZMCHBSMFKQYNKA-UHFFFAOYSA-N 0.000 description 1
- VRVRGVPWCUEOGV-UHFFFAOYSA-N 2-aminothiophenol Chemical compound NC1=CC=CC=C1S VRVRGVPWCUEOGV-UHFFFAOYSA-N 0.000 description 1
- HHCHLHOEAKKCAB-UHFFFAOYSA-N 2-oxaspiro[3.5]nonane-1,3-dione Chemical compound O=C1OC(=O)C11CCCCC1 HHCHLHOEAKKCAB-UHFFFAOYSA-N 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- AJHPGXZOIAYYDW-UHFFFAOYSA-N 3-(2-cyanophenyl)-2-[(2-methylpropan-2-yl)oxycarbonylamino]propanoic acid Chemical compound CC(C)(C)OC(=O)NC(C(O)=O)CC1=CC=CC=C1C#N AJHPGXZOIAYYDW-UHFFFAOYSA-N 0.000 description 1
- GIMFLOOKFCUUOQ-UHFFFAOYSA-N 3-amino-4-hydroxy-1,2-dihydropyrimidin-6-one Chemical compound NN1CN=C(O)C=C1O GIMFLOOKFCUUOQ-UHFFFAOYSA-N 0.000 description 1
- ZAJAQTYSTDTMCU-UHFFFAOYSA-N 3-aminobenzenesulfonic acid Chemical compound NC1=CC=CC(S(O)(=O)=O)=C1 ZAJAQTYSTDTMCU-UHFFFAOYSA-N 0.000 description 1
- KFFUEVDMVNIOHA-UHFFFAOYSA-N 3-aminobenzenethiol Chemical compound NC1=CC=CC(S)=C1 KFFUEVDMVNIOHA-UHFFFAOYSA-N 0.000 description 1
- ZHVPTERSBUMMHK-UHFFFAOYSA-N 3-aminonaphthalen-2-ol Chemical compound C1=CC=C2C=C(O)C(N)=CC2=C1 ZHVPTERSBUMMHK-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- WHNPOQXWAMXPTA-UHFFFAOYSA-N 3-methylbut-2-enamide Chemical compound CC(C)=CC(N)=O WHNPOQXWAMXPTA-UHFFFAOYSA-N 0.000 description 1
- NXTNASSYJUXJDV-UHFFFAOYSA-N 3-nitrobenzoyl chloride Chemical compound [O-][N+](=O)C1=CC=CC(C(Cl)=O)=C1 NXTNASSYJUXJDV-UHFFFAOYSA-N 0.000 description 1
- RSFDFESMVAIVKO-UHFFFAOYSA-N 3-sulfanylbenzoic acid Chemical compound OC(=O)C1=CC=CC(S)=C1 RSFDFESMVAIVKO-UHFFFAOYSA-N 0.000 description 1
- QMWGSOMVXSRXQX-UHFFFAOYSA-N 3-sulfobenzoic acid Chemical compound OC(=O)C1=CC=CC(S(O)(=O)=O)=C1 QMWGSOMVXSRXQX-UHFFFAOYSA-N 0.000 description 1
- BRPSWMCDEYMRPE-UHFFFAOYSA-N 4-[1,1-bis(4-hydroxyphenyl)ethyl]phenol Chemical compound C=1C=C(O)C=CC=1C(C=1C=CC(O)=CC=1)(C)C1=CC=C(O)C=C1 BRPSWMCDEYMRPE-UHFFFAOYSA-N 0.000 description 1
- ALYNCZNDIQEVRV-PZFLKRBQSA-N 4-amino-3,5-ditritiobenzoic acid Chemical compound [3H]c1cc(cc([3H])c1N)C(O)=O ALYNCZNDIQEVRV-PZFLKRBQSA-N 0.000 description 1
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 1
- WCDSVWRUXWCYFN-UHFFFAOYSA-N 4-aminobenzenethiol Chemical compound NC1=CC=C(S)C=C1 WCDSVWRUXWCYFN-UHFFFAOYSA-N 0.000 description 1
- WUBBRNOQWQTFEX-UHFFFAOYSA-N 4-aminosalicylic acid Chemical compound NC1=CC=C(C(O)=O)C(O)=C1 WUBBRNOQWQTFEX-UHFFFAOYSA-N 0.000 description 1
- CCTOEAMRIIXGDJ-UHFFFAOYSA-N 4-hydroxy-2-benzofuran-1,3-dione Chemical compound OC1=CC=CC2=C1C(=O)OC2=O CCTOEAMRIIXGDJ-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- GXVDVJQTXFTVMP-UHFFFAOYSA-N 4-methoxypentan-2-ol Chemical compound COC(C)CC(C)O GXVDVJQTXFTVMP-UHFFFAOYSA-N 0.000 description 1
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 1
- LMJXSOYPAOSIPZ-UHFFFAOYSA-N 4-sulfanylbenzoic acid Chemical compound OC(=O)C1=CC=C(S)C=C1 LMJXSOYPAOSIPZ-UHFFFAOYSA-N 0.000 description 1
- HWAQOZGATRIYQG-UHFFFAOYSA-N 4-sulfobenzoic acid Chemical compound OC(=O)C1=CC=C(S(O)(=O)=O)C=C1 HWAQOZGATRIYQG-UHFFFAOYSA-N 0.000 description 1
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 description 1
- ZBIBQNVRTVLOHQ-UHFFFAOYSA-N 5-aminonaphthalen-1-ol Chemical compound C1=CC=C2C(N)=CC=CC2=C1O ZBIBQNVRTVLOHQ-UHFFFAOYSA-N 0.000 description 1
- FSBRKZMSECKELY-UHFFFAOYSA-N 5-aminonaphthalen-2-ol Chemical compound OC1=CC=C2C(N)=CC=CC2=C1 FSBRKZMSECKELY-UHFFFAOYSA-N 0.000 description 1
- FPKNJPIDCMAIDW-UHFFFAOYSA-N 5-aminonaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(N)=CC=CC2=C1C(O)=O FPKNJPIDCMAIDW-UHFFFAOYSA-N 0.000 description 1
- XVOBQVZYYPJXCK-UHFFFAOYSA-N 5-aminonaphthalene-2-carboxylic acid Chemical compound OC(=O)C1=CC=C2C(N)=CC=CC2=C1 XVOBQVZYYPJXCK-UHFFFAOYSA-N 0.000 description 1
- YDEUKNRKEYICTH-UHFFFAOYSA-N 5-aminoquinolin-8-ol Chemical compound C1=CC=C2C(N)=CC=C(O)C2=N1 YDEUKNRKEYICTH-UHFFFAOYSA-N 0.000 description 1
- NYYMNZLORMNCKK-UHFFFAOYSA-N 5-hydroxynaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1O NYYMNZLORMNCKK-UHFFFAOYSA-N 0.000 description 1
- SMAMQSIENGBTRV-UHFFFAOYSA-N 5-hydroxynaphthalene-2-carboxylic acid Chemical compound OC1=CC=CC2=CC(C(=O)O)=CC=C21 SMAMQSIENGBTRV-UHFFFAOYSA-N 0.000 description 1
- VTUGNNIWJSWUSP-UHFFFAOYSA-N 5-sulfanylnaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1S VTUGNNIWJSWUSP-UHFFFAOYSA-N 0.000 description 1
- NQSLRCGJQDKCHO-UHFFFAOYSA-N 5-sulfanylnaphthalene-2-carboxylic acid Chemical compound SC1=CC=CC2=CC(C(=O)O)=CC=C21 NQSLRCGJQDKCHO-UHFFFAOYSA-N 0.000 description 1
- QYFYIOWLBSPSDM-UHFFFAOYSA-N 6-aminonaphthalen-1-ol Chemical compound OC1=CC=CC2=CC(N)=CC=C21 QYFYIOWLBSPSDM-UHFFFAOYSA-N 0.000 description 1
- SERBLGFKBWPCJD-UHFFFAOYSA-N 6-aminonaphthalen-2-ol Chemical compound C1=C(O)C=CC2=CC(N)=CC=C21 SERBLGFKBWPCJD-UHFFFAOYSA-N 0.000 description 1
- CKSZZOAKPXZMAT-UHFFFAOYSA-N 6-aminonaphthalene-1-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=CC(N)=CC=C21 CKSZZOAKPXZMAT-UHFFFAOYSA-N 0.000 description 1
- NZTPZUIIYNYZKT-UHFFFAOYSA-N 6-aminonaphthalene-2-carboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(N)=CC=C21 NZTPZUIIYNYZKT-UHFFFAOYSA-N 0.000 description 1
- ZYSOYLBBCYWEMB-UHFFFAOYSA-N 7-aminonaphthalen-1-ol Chemical compound C1=CC=C(O)C2=CC(N)=CC=C21 ZYSOYLBBCYWEMB-UHFFFAOYSA-N 0.000 description 1
- WSUYONLKFXZZRV-UHFFFAOYSA-N 7-aminonaphthalen-2-ol Chemical compound C1=CC(O)=CC2=CC(N)=CC=C21 WSUYONLKFXZZRV-UHFFFAOYSA-N 0.000 description 1
- BFBAHPDPLUEECU-UHFFFAOYSA-N 7-aminonaphthalene-1-carboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=CC(N)=CC=C21 BFBAHPDPLUEECU-UHFFFAOYSA-N 0.000 description 1
- NBPYPKQPLKDTKB-UHFFFAOYSA-N 7-aminonaphthalene-2-carboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(N)=CC=C21 NBPYPKQPLKDTKB-UHFFFAOYSA-N 0.000 description 1
- ZPCQQOXOXNMOIJ-UHFFFAOYSA-N 8-hydroxynaphthalene-2-carboxylic acid Chemical compound C1=CC=C(O)C2=CC(C(=O)O)=CC=C21 ZPCQQOXOXNMOIJ-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- KBLRKELNJOAUPB-UHFFFAOYSA-N Cc(cc1CC2C=CC(O)=CC2O)cc(Cc(ccc(O)c2)c2O)c1O Chemical compound Cc(cc1CC2C=CC(O)=CC2O)cc(Cc(ccc(O)c2)c2O)c1O KBLRKELNJOAUPB-UHFFFAOYSA-N 0.000 description 1
- QOSSAOTZNIDXMA-UHFFFAOYSA-N Dicylcohexylcarbodiimide Chemical compound C1CCCCC1N=C=NC1CCCCC1 QOSSAOTZNIDXMA-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical group ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- ZSXGLVDWWRXATF-UHFFFAOYSA-N N,N-dimethylformamide dimethyl acetal Chemical compound COC(OC)N(C)C ZSXGLVDWWRXATF-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000004849 alkoxymethyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229960004909 aminosalicylic acid Drugs 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010533 azeotropic distillation Methods 0.000 description 1
- NIDNOXCRFUCAKQ-UHFFFAOYSA-N bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1C2C=CC1C(C(=O)O)C2C(O)=O NIDNOXCRFUCAKQ-UHFFFAOYSA-N 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- 238000001460 carbon-13 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- QYQADNCHXSEGJT-UHFFFAOYSA-N cyclohexane-1,1-dicarboxylate;hydron Chemical compound OC(=O)C1(C(O)=O)CCCCC1 QYQADNCHXSEGJT-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- KBOPZPXVLCULAV-UHFFFAOYSA-N mesalamine Chemical compound NC1=CC=C(O)C(C(O)=O)=C1 KBOPZPXVLCULAV-UHFFFAOYSA-N 0.000 description 1
- 229960004963 mesalazine Drugs 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- UKVIEHSSVKSQBA-UHFFFAOYSA-N methane;palladium Chemical compound C.[Pd] UKVIEHSSVKSQBA-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 1
- DFFZOPXDTCDZDP-UHFFFAOYSA-N naphthalene-1,5-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1C(O)=O DFFZOPXDTCDZDP-UHFFFAOYSA-N 0.000 description 1
- VAWFFNJAPKXVPH-UHFFFAOYSA-N naphthalene-1,6-dicarboxylic acid Chemical compound OC(=O)C1=CC=CC2=CC(C(=O)O)=CC=C21 VAWFFNJAPKXVPH-UHFFFAOYSA-N 0.000 description 1
- JSKSILUXAHIKNP-UHFFFAOYSA-N naphthalene-1,7-dicarboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=CC(C(=O)O)=CC=C21 JSKSILUXAHIKNP-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- GEVPUGOOGXGPIO-UHFFFAOYSA-N oxalic acid;dihydrate Chemical compound O.O.OC(=O)C(O)=O GEVPUGOOGXGPIO-UHFFFAOYSA-N 0.000 description 1
- 125000002971 oxazolyl group Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical class CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N phthalic anhydride Chemical compound C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Materials For Photolithography (AREA)
- Electroluminescent Light Sources (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
本発明は、感光性樹脂組成物に関する。さらに詳しくは、半導体素子の表面保護膜や層間絶縁膜、有機エレクトロルミネッセンス(Electroluminescence:以下ELと記す)素子の絶縁膜、有機EL素子を用いた表示装置の駆動用薄膜トランジスタ(Thin Film Transistor:以下TFTと記す)基板の平坦化膜、回路基板の配線保護絶縁膜、固体撮像素子のオンチップマイクロレンズや各種ディスプレイ・固体撮像素子用平坦化膜などの用途に適した感光性樹脂組成物に関する。 The present invention relates to a photosensitive resin composition. More specifically, a surface protective film or interlayer insulating film of a semiconductor element, an insulating film of an organic electroluminescence (hereinafter referred to as EL) element, and a thin film transistor (hereinafter referred to as TFT) for driving a display device using an organic EL element. The present invention relates to a photosensitive resin composition suitable for applications such as a substrate flattening film, a circuit substrate wiring protective insulating film, an on-chip microlens of a solid-state imaging device, and a flattening film for various displays and solid-state imaging devices.
ポリイミドやポリベンゾオキサゾールに代表される樹脂はその優れた耐熱性や電気絶縁
性などから、LSI(Large Scale Integration Cuircuit)などの半導体素子の表面保護膜、層間絶縁膜、有機EL素子の絶縁層やTFT基板の平坦化膜などに用いられている。
Resins typified by polyimide and polybenzoxazole have excellent heat resistance and electrical insulation, so that they can be used as surface protective films for semiconductor devices such as LSIs (Large Scale Integration Curricuit), interlayer insulating films, and insulating layers for organic EL devices. It is used as a flattening film for TFT substrates.
このような用途において、アルカリ現像により溶解する微細加工可能なポジ型の感光性樹脂組成物が用いられており、これらポジ型の感光性樹脂組成物には、水酸基を有した可溶性ポリイミドにナフトキノンジアジドを添加したもの(特許文献1参照)、ポリイミド前駆体とナフトキノンジアジド化合物に特定の構造を有したフェノール性水酸基を持つ化合物を添加したもの(特許文献2参照)、芳香族ヒドロキシ化合物とアルデヒド類またはケトン類との縮合反応生成物、ポリヒドロキシスチレンおよびその誘導体等のアルカリ可溶性樹脂とキノンジアジドエステル化物に特定の構造を有したフェノール性水酸基を持つ化合物を添加したポジ型ホトレジスト組成物(特許文献3、4参照)などが知られている。 In such applications, finely processable positive photosensitive resin compositions that dissolve by alkaline development are used, and these positive photosensitive resin compositions include naphthoquinone diazide in a soluble polyimide having a hydroxyl group. (See Patent Document 1), a polyimide precursor and a naphthoquinone diazide compound to which a compound having a phenolic hydroxyl group having a specific structure is added (see Patent Document 2), an aromatic hydroxy compound and aldehydes or A positive polyimide composition obtained by adding an alkali-soluble resin such as a condensation reaction product with ketones, polyhydroxystyrene and its derivative, and a compound having a phenolic hydroxyl group having a specific structure to a quinonediazide esterified product (Patent Document 3, Patent Document 3, 4) and the like are known.
上記特許文献1〜3に記載の組成物では、高感度と現像時の膜べり抑制の両立に課題があった。 The compositions described in Patent Documents 1 to 3 have a problem in achieving both high sensitivity and suppression of film slippage during development.
本発明は、高感度でありながら、現像時の膜べりを抑制できる感光性樹脂組成物を提供することを目的とする。すなわち本発明は、
(a)アルカリ可溶性樹脂と、
(b)ナフトキノンジアジドエステル化物と、
(c)一般式(I)で表される化合物と、
(d)有機溶剤を含有する感光性樹脂組成物であって、
該(c)一般式(I)で表される化合物の液体クロマトグラフィー法により検出器波長254nmで検出されたピークの総面積100%に対して、該一般式(I)のxが1である化合物に関するピークの面積が80〜92%でありかつ、xが3である化合物に関するピークの面積が7〜15%でありかつ、xが5である化合物に関するピークの面積が1〜5%でありかつ、該(c)一般式(I)で表される化合物が(a)アルカリ可溶性樹脂100質量部に対して10質量部以上、30質量部以下を含有する感光性樹脂組成物である。
An object of the present invention is to provide a photosensitive resin composition capable of suppressing film burr during development while having high sensitivity. That is, the present invention
(A) Alkali-soluble resin and
(B) Naftquinone diazide esterified product and
(C) The compound represented by the general formula (I) and
(D) A photosensitive resin composition containing an organic solvent.
The x of the general formula (I) is 1 with respect to 100% of the total area of the peak detected at the detector wavelength of 254 nm by the liquid chromatography method of the compound represented by the general formula (I) (c). The area of the peak for the compound is 80-92%, the area of the peak for the compound where x is 3 is 7 to 15%, and the area of the peak for the compound where x is 5 is 1-5%. Moreover, the compound represented by the general formula (I) is (a) a photosensitive resin composition containing 10 parts by mass or more and 30 parts by mass or less with respect to 100 parts by mass of an alkali-soluble resin.
式中R4、R5、R7、R8は、それぞれ独立に、水酸基、水素原子、炭素数1〜4のアルキル基、炭素数1〜4のアルコキシル基、カルボキシル基、炭素数1〜4のエステル基のいずれかを示す。R6は水酸基、水素原子、炭素数1〜7から選ばれるアルキル基、ヒドロキシベンジル基のいずれかを示し、少なくとも1つのR6は水酸基である。複数のR4、R5、R6は各々同じでも異なっていてもよい。xは1〜5の整数を示す。 In the formula, R 4 , R 5 , R 7 , and R 8 independently have a hydroxyl group, a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxyl group having 1 to 4 carbon atoms, a carboxyl group, and 1 to 4 carbon atoms. Indicates one of the ester groups of. R 6 represents a hydroxyl group, a hydrogen atom, an alkyl group selected from 1 to 7 carbon atoms, or a hydroxybenzyl group, and at least one R 6 is a hydroxyl group. The plurality of R 4 , R 5 , and R 6 may be the same or different. x represents an integer of 1-5.
本発明によれば、高感度でありながら、現像時の膜べりを抑制できる感光性樹脂組成物を得ることができる。 According to the present invention, it is possible to obtain a photosensitive resin composition capable of suppressing film burr during development while having high sensitivity.
本発明の感光性樹脂組成物は、
(a)アルカリ可溶性樹脂と、
(b)ナフトキノンジアジドエステル化物と、
(c)一般式(I)で表される化合物と、
(d)有機溶剤を含有する感光性樹脂組成物であって、
該(c)一般式(I)で表される化合物の液体クロマトグラフィー法により検出器波長254nmで検出されたピークの総面積100%に対して、該一般式(I)のxが1である化合物に関するピークの面積が80〜92%でありかつ、xが3である化合物に関するピークの面積が7〜15%でありかつ、xが5である化合物に関するピークの面積が1〜5%でありかつ、該(c)一般式(I)で表される化合物が(a)アルカリ可溶性樹脂100質量部に対して10質量部以上、30質量部以下を含有する感光性樹脂組成物
The photosensitive resin composition of the present invention is
(A) Alkali-soluble resin and
(B) Naftquinone diazide esterified product and
(C) The compound represented by the general formula (I) and
(D) A photosensitive resin composition containing an organic solvent.
The x of the general formula (I) is 1 with respect to 100% of the total area of the peak detected at the detector wavelength of 254 nm by the liquid chromatography method of the compound represented by the general formula (I) (c). The area of the peak for the compound is 80-92%, the area of the peak for the compound where x is 3 is 7 to 15%, and the area of the peak for the compound where x is 5 is 1-5%. A photosensitive resin composition containing 10 parts by mass or more and 30 parts by mass or less of the compound represented by the general formula (I) with respect to 100 parts by mass of (a) alkali-soluble resin.
式中R4、R5、R7、R8は、それぞれ独立に、水酸基、水素原子、炭素数1〜4のアルキル基、炭素数1〜4のアルコキシル基、カルボキシル基、炭素数1〜4のエステル基のいずれかを示す。R6は水酸基、水素原子、炭素数1〜7から選ばれるアルキル基、ヒドロキシベンジル基のいずれかを示し、少なくとも1つのR6は水酸基である。複数のR4、R5、R6は各々同じでも異なっていてもよい。xは1〜5の整数を示す。 In the formula, R 4 , R 5 , R 7 , and R 8 independently have a hydroxyl group, a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxyl group having 1 to 4 carbon atoms, a carboxyl group, and 1 to 4 carbon atoms. Indicates one of the ester groups of. R 6 represents a hydroxyl group, a hydrogen atom, an alkyl group selected from 1 to 7 carbon atoms, or a hydroxybenzyl group, and at least one R 6 is a hydroxyl group. The plurality of R 4 , R 5 , and R 6 may be the same or different. x represents an integer of 1-5.
本発明の感光性樹脂組成物は、(a)アルカリ可溶性樹脂を含有する。
(a)アルカリ可溶性樹脂としては、ポリイミド、ポリベンゾオキサゾール、およびそれらの前駆体、アクリル酸を有するラジカル重合性ポリマー、フェノール−ノボラック樹脂、ポリヒドロキシスチレン、ポリシロキサンなどが挙げられる。また、これら樹脂の酸性基を保護してアルカリ溶解性を調節してもよい。
The photosensitive resin composition of the present invention contains (a) an alkali-soluble resin.
Examples of the alkali-soluble resin include polyimide, polybenzoxazole, and precursors thereof, a radically polymerizable polymer having acrylic acid, a phenol-novolac resin, polyhydroxystyrene, and polysiloxane. Further, the alkali solubility may be adjusted by protecting the acidic groups of these resins.
アルカリ可溶性樹脂とは、アルカリに可溶となる酸性基を有する樹脂を言い、このような樹脂は、テトラメチルアンモニウムヒドロキシド以外に、コリン、トリエチルアミン、ジメチルアミノピリジン、モノエタノールアミン、ジエチルアミノエタノール、水酸化ナトリウム、水酸化カリウム、炭酸ナトリウムなどのアルカリの水溶液に溶解するものである。これらの樹脂を2種以上含有してもよい。 The alkali-soluble resin refers to a resin having an acidic group that is soluble in alkali, and such a resin includes choline, triethylamine, dimethylaminopyridine, monoethanolamine, diethylaminoethanol, and water in addition to tetramethylammonium hydroxide. It dissolves in an alkaline aqueous solution such as sodium oxide, potassium hydroxide, and sodium carbonate. Two or more of these resins may be contained.
中でも耐薬品性の観点から、ポリイミド、ポリベンゾオキサゾールおよび/またはそれらの前駆体が好ましく、より好ましくはポリイミドおよび/またはポリイミド前駆体である。ポリイミド前駆体は約200℃における焼成によりアミド酸部位が閉環するイミド化反応を進行し、ポリベンゾオキサゾール前駆体は約300℃における焼成によりヒドロキシアミド部位が閉環するオキサゾール化反応を進行し、体積収縮する性質を有する。これらの前駆体樹脂を用いた感光性樹脂組成物は、露光・現像工程により微細パターンを得た後、硬化膜を得る際の加熱により、順テーパー形状のパターンを得ることができる。この順テーパー形状パターンは、有機EL素子の絶縁膜として用いる際に上部電極の被覆性に優れ、断線を防止し素子の信頼性を高めることができる。 Among them, from the viewpoint of chemical resistance, polyimide, polybenzoxazole and / or a precursor thereof are preferable, and polyimide and / or a polyimide precursor is more preferable. The polyimide precursor undergoes an imidization reaction in which the amic acid moiety is closed by firing at about 200 ° C., and the polybenzoxazole precursor undergoes an oxazoleization reaction in which the hydroxyamide moiety is closed by firing at about 300 ° C., resulting in volume shrinkage. Has the property of The photosensitive resin composition using these precursor resins can obtain a forward-tapered pattern by heating when obtaining a cured film after obtaining a fine pattern by an exposure / developing step. This forward taper shape pattern is excellent in coating properties of the upper electrode when used as an insulating film of an organic EL element, can prevent disconnection, and can improve the reliability of the element.
ポリイミドおよびポリベンゾオキサゾールは、主鎖構造内にイミド環またはオキサゾール環の環状構造を有する樹脂である。重量平均分子量は、5,000〜500,000が好ましく、10,000〜100,000がより好ましく、15,000〜400,000がさらに好ましい。 Polyimide and polybenzoxazole are resins having a cyclic structure of an imide ring or an oxazole ring in the main chain structure. The weight average molecular weight is preferably 5,000 to 500,000, more preferably 10,000 to 100,000, and even more preferably 15,000 to 400,000.
ポリイミドは、テトラカルボン酸や対応するテトラカルボン酸二無水物、テトラカルボン酸ジエステルジクロリドなどと、ジアミンやジイソシアネート化合物、トリメチルシリル化ジアミンを反応させることにより得ることができ、テトラカルボン酸残基とジアミン残基を有する。例えば、テトラカルボン酸二無水物とジアミンを反応させて得られるポリイミド前駆体の1つであるポリアミド酸を、加熱処理により脱水閉環することにより得ることができる。あるいは、カルボン酸無水物やジシクロヘキシルカルボジイミド等の脱水縮合剤やトリエチルアミン等の塩基などを閉環触媒として加えて、化学熱処理により脱水閉環することにより得ることもできる。または、弱酸性のカルボン酸化合物を加えて100℃以下の低温で加熱処理により脱水閉環することにより得ることもできる。 Polyimide can be obtained by reacting a tetracarboxylic acid, a corresponding tetracarboxylic dianhydride, a tetracarboxylic dianester dichloride, or the like with a diamine, a diisocyanate compound, or a trimethylsilylated diamine, and the tetracarboxylic acid residue and the diamine residue can be obtained. Has a group. For example, it can be obtained by dehydrating and closing the ring of polyamic acid, which is one of the polyimide precursors obtained by reacting tetracarboxylic dianhydride with diamine, by heat treatment. Alternatively, it can also be obtained by adding a dehydration condensing agent such as carboxylic acid anhydride or dicyclohexylcarbodiimide or a base such as triethylamine as a ring-closing catalyst, and dehydrating and ring-closing by chemical heat treatment. Alternatively, it can also be obtained by adding a weakly acidic carboxylic acid compound and dehydrating and ring-closing by heat treatment at a low temperature of 100 ° C. or lower.
ポリベンゾオキサゾールは、ビスアミノフェノール化合物とジカルボン酸やジカルボン酸クロリド、ジカルボン酸活性エステルなどを反応させて得ることができ、ジカルボン酸残基とビスアミノフェノール残基を有する。例えば、ビスアミノフェノール化合物とジカルボン酸を反応させて得られるポリベンゾオキサゾール前駆体の1つであるポリヒドロキシアミドを、加熱処理により脱水閉環することにより得ることができる。あるいは、無水リン酸、塩基、カルボジイミド化合物などを加えて、化学処理により脱水閉環することにより得ることができる。 Polybenzoxazole can be obtained by reacting a bisaminophenol compound with a dicarboxylic acid, a dicarboxylic acid chloride, a dicarboxylic acid active ester, or the like, and has a dicarboxylic acid residue and a bisaminophenol residue. For example, it can be obtained by dehydrating and closing the ring of polyhydroxyamide, which is one of the polybenzoxazole precursors obtained by reacting a bisaminophenol compound with a dicarboxylic acid, by heat treatment. Alternatively, it can be obtained by adding anhydrous phosphoric acid, a base, a carbodiimide compound, or the like and dehydrating and closing the ring by chemical treatment.
ポリイミド前駆体、およびポリベンゾオキサゾール前駆体は、主鎖にアミド結合を有する樹脂であり、加熱処理や化学処理により脱水閉環することにより、前述のポリイミド、ポリベンゾオキサゾールとなる。重量平均分子量は、5,000〜500,000が好ましく、10,000〜100,000がより好ましく、15,000〜400,000がさらに好ましい。ポリイミド前駆体としては、ポリアミド酸、ポリアミド酸エステル、ポリアミド酸アミド、ポリイソイミドなどを挙げることができ、ポリアミド酸、ポリアミド酸エステルが好ましい。ポリベンゾオキサゾール前駆体としては、ポリヒドロキシアミド、ポリアミノアミド、ポリアミド、ポリアミドイミドなどを挙げることができ、ポリヒドロキシアミドが好ましい。 The polyimide precursor and the polybenzoxazole precursor are resins having an amide bond in the main chain, and are dehydrated and closed by heat treatment or chemical treatment to obtain the above-mentioned polyimide or polybenzoxazole. The weight average molecular weight is preferably 5,000 to 500,000, more preferably 10,000 to 100,000, and even more preferably 15,000 to 400,000. Examples of the polyimide precursor include polyamic acid, polyamic acid ester, polyamic acid amide, polyisoimide and the like, and polyamic acid and polyamic acid ester are preferable. Examples of the polybenzoxazole precursor include polyhydroxyamide, polyaminoamide, polyamide, polyamideimide and the like, and polyhydroxyamide is preferable.
ポリイミド、ポリベンゾオキサゾール、およびそれらの前駆体は、アルカリ水溶液に対する溶解性の観点から、酸残基またはジアミン残基にOR27、SO3R27、CONR27R28、COOR27、SO2NR27R28などの酸性基または酸性基誘導体を有することが好ましく、水酸基を有することがより好ましい。R27およびR28は水素原子または炭素数1〜20の1価の有機基を示し、同一であっても異なっていてもよい。なお、酸性基とはR27およびR28が全て水素原子となる場合を指し、酸性基誘導体とはR27またはR28に炭素数1〜20の1価の有機基が含まれる場合を指す。有機基としては、アルキル基、アルコキシル基、エステル基などが挙げられる。 Polyimides, polybenzoxazoles, and their precursors have OR 27 , SO 3 R 27 , CONR 27 R 28 , COOR 27 , SO 2 NR 27 in acid or diamine residues from the standpoint of solubility in aqueous alkaline solutions. It preferably has an acidic group such as R 28 or an acidic group derivative, and more preferably has a hydroxyl group. R 27 and R 28 represent hydrogen atoms or monovalent organic groups having 1 to 20 carbon atoms, which may be the same or different. The acidic group refers to the case where R 27 and R 28 are all hydrogen atoms, and the acidic group derivative refers to the case where R 27 or R 28 contains a monovalent organic group having 1 to 20 carbon atoms. Examples of the organic group include an alkyl group, an alkoxyl group and an ester group.
ポリイミド、ポリイミド前駆体のテトラカルボン酸残基およびポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体のジカルボン酸残基の好ましい構造として、次のような構造や、これらの水素原子の一部を炭素数1〜20のアルキル基、フルオロアルキル基、アルコキシル基、エステル基、ニトロ基、シアノ基、フッ素原子、塩素原子により1〜4個置換した構造などが挙げられる。 Preferred structures of the tetracarboxylic acid residue of polyimide and the polyimide precursor and the dicarboxylic acid residue of polybenzoxazole and the polybenzoxazole precursor include the following structures and some of these hydrogen atoms having 1 to 1 carbon atoms. Examples thereof include a structure in which 1 to 4 are substituted with 20 alkyl groups, fluoroalkyl groups, alkoxyl groups, ester groups, nitro groups, cyano groups, fluorine atoms and chlorine atoms.
ただし、Jは直接結合、−COO−、−CONH−、−CH2−、−C2H4−、−O−、−C3H6−、−C3F6−、−SO2−、−S−、−Si(CH3)2−、−O−Si(CH3)2−O−、−C6H4−、−C6H4−O−C6H4−、−C6H4−C3H6−C6H4−または−C6H4−C3F6−C6H4−を示す。 However, J is a direct bond, -COO -, - CONH -, - CH 2 -, - C 2 H 4 -, - O -, - C 3 H 6 -, - C 3 F 6 -, - SO 2 -, -S -, - Si (CH 3 ) 2 -, - O-Si (CH 3) 2 -O -, - C 6 H 4 -, - C 6 H 4 -O-C 6 H 4 -, - C 6 H 4 -C 3 H 6 -C 6 H 4 - or -C 6 H 4 -C 3 F 6 -C 6 H 4 - shows a.
ポリイミド、ポリイミド前駆体のジアミン残基およびポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体のビスアミノフェノール残基の好ましい構造として、次のような構造や、これらの水素原子の一部を炭素数1〜20のアルキル基、フルオロアルキル基、アルコキシル基、エステル基、ニトロ基、シアノ基、フッ素原子、塩素原子により1〜4個置換した構造などが挙げられる。 Preferred structures of polyimide, the diamine residue of the polyimide precursor and the polybenzoxazole, and the bisaminophenol residue of the polybenzoxazole precursor include the following structures and some of these hydrogen atoms having 1 to 20 carbon atoms. Examples thereof include a structure in which 1 to 4 are substituted with an alkyl group, a fluoroalkyl group, an alkoxyl group, an ester group, a nitro group, a cyano group, a fluorine atom and a chlorine atom.
ただし、Jは直接結合、−COO−、−CONH−、−CH2−、−C2H4−、−O−、−C3H6−、−C3F6−、−SO2−、−S−、−Si(CH3)2−、−O−Si(CH3)2−O−、−C6H4−、−C6H4−O−C6H4−、−C6H4−C3H6−C6H4−または−C6H4−C3F6−C6H4−を示す。R1は水素原子または炭素数1〜20の1価の有機基を示す。 However, J is a direct bond, -COO -, - CONH -, - CH 2 -, - C 2 H 4 -, - O -, - C 3 H 6 -, - C 3 F 6 -, - SO 2 -, -S -, - Si (CH 3 ) 2 -, - O-Si (CH 3) 2 -O -, - C 6 H 4 -, - C 6 H 4 -O-C 6 H 4 -, - C 6 H 4 -C 3 H 6 -C 6 H 4 - or -C 6 H 4 -C 3 F 6 -C 6 H 4 - shows a. R 1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
また、ポリイミド、ポリベンゾオキサゾール、それらの前駆体の末端を、水酸基、カルボキシル基、スルホン酸基またはチオール基を有するモノアミン、酸無水物、酸クロリドまたはモノカルボン酸により封止することが好ましい。またこれらを2種以上用いて封止してもよい。樹脂末端に前述の基を有することにより、樹脂のアルカリ水溶液に対する溶解速度を好ましい範囲に容易に調整することができる。 Further, it is preferable to seal the ends of polyimide, polybenzoxazole, and their precursors with a monoamine having a hydroxyl group, a carboxyl group, a sulfonic acid group or a thiol group, an acid anhydride, an acid chloride or a monocarboxylic acid. Moreover, you may seal using these 2 or more types. By having the above-mentioned group at the resin terminal, the dissolution rate of the resin in an alkaline aqueous solution can be easily adjusted within a preferable range.
モノアミンの好ましい例としては、5−アミノ−8−ヒドロキシキノリン、1−ヒドロキシ−7−アミノナフタレン、1−ヒドロキシ−6−アミノナフタレン、1−ヒドロキシ−5−アミノナフタレン、1−ヒドロキシ−4−アミノナフタレン、2−ヒドロキシ−7−アミノナフタレン、2−ヒドロキシ−6−アミノナフタレン、2−ヒドロキシ−5−アミノナフタレン、2−ヒドロキシ−3−アミノナフタレン、1−カルボキシ−7−アミノナフタレン、1−カルボキシ−6−アミノナフタレン、1−カルボキシ−5−アミノナフタレン、2−カルボキシ−7−アミノナフタレン、2−カルボキシ−6−アミノナフタレン、2−カルボキシ−5−アミノナフタレン、2−アミノ安息香酸、3−アミノ安息香酸、4−アミノ安息香酸、4−アミノサリチル酸、5−アミノサリチル酸、6−アミノサリチル酸、2−アミノベンゼンスルホン酸、3−アミノベンゼンスルホン酸、4−アミノベンゼンスルホン酸、3−アミノ−4,6−ジヒドロキシピリミジン、2−アミノフェノール、3−アミノフェノール、4−アミノフェノール、2−アミノ−4−terブチルフェノール、2−アミノチオフェノール、3−アミノチオフェノール、4−アミノチオフェノールなどを挙げることができる。 Preferred examples of monoamines are 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-amino. Naphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 2-hydroxy-3-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy -6-Aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3- Aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino- 4,6-Dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-amino-4-terbutylphenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, etc. Can be mentioned.
酸無水物、酸クロリド、モノカルボン酸の好ましい例としては、無水フタル酸、無水マレイン酸、ナジック酸、シクロヘキサンジカルボン酸無水物、3−ヒドロキシフタル酸無水物などの酸無水物、3−カルボキシフェノール、4−カルボキシフェノール、3−カルボキシチオフェノール、4−カルボキシチオフェノール、1−ヒドロキシ−7−カルボキシナフタレン、1−ヒドロキシ−6−カルボキシナフタレン、1−ヒドロキシ−5−カルボキシナフタレン、1−メルカプト−7−カルボキシナフタレン、1−メルカプト−6−カルボキシナフタレン、1−メルカプト−5−カルボキシナフタレン、3−カルボキシベンゼンスルホン酸、4−カルボキシベンゼンスルホン酸などのモノカルボン酸類およびこれらのカルボキシル基が酸クロリド化したモノ酸クロリド化合物、テレフタル酸、フタル酸、マレイン酸、シクロヘキサンジカルボン酸、1,5−ジカルボキシナフタレン、1,6−ジカルボキシナフタレン、1,7−ジカルボキシナフタレン、2,6−ジカルボキシナフタレンなどのジカルボン酸類の1つのカルボキシル基だけが酸クロリド化したモノ酸クロリド化合物、モノ酸クロリド化合物とN−ヒドロキシベンゾトリアゾールやN−ヒドロキシ−5−ノルボルネン−2,3−ジカルボキシイミドとの反応により得られる活性エステル化合物などを挙げることができる。 Preferred examples of acid anhydrides, acid chlorides and monocarboxylic acids include phthalic acid anhydride, maleic anhydride, nadic acid, cyclohexanedicarboxylic acid anhydride, acid anhydrides such as 3-hydroxyphthalic acid anhydride, and 3-carboxyphenol. , 4-carboxyphenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-mercapto-7 Monocarboxylic acids such as −carboxynaphthalene, 1-mercapto-6-carboxynaphthalene, 1-mercapto-5-carboxynaphthalene, 3-carboxybenzene sulfonic acid, 4-carboxybenzene sulfonic acid and their carboxyl groups were acid chlorided. Monoic acid chloride compound, terephthalic acid, phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene, 2,6-dicarboxynaphthalene, etc. Obtained by reacting a monoacid chloride compound in which only one carboxyl group of the dicarboxylic acids in the above is acid chloride, a monoacid chloride compound with N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2,3-dicarboxyimide. The active ester compound to be used can be mentioned.
上記したモノアミン、酸無水物、酸クロリド、モノカルボン酸などの末端封止剤の含有量は、酸成分モノマーまたはジアミン成分モノマーの仕込みモル数の0.1〜60モル%の範囲が好ましく、5〜50モル%がより好ましい。このような範囲とすることで、感光性樹脂組成物を塗布する際の溶液の粘性が適度で、かつ優れた膜物性を有した感光性樹脂組成物を得ることができる。
また、樹脂の末端に重合性官能基を有してもよい。重合性官能基の例としては、エチレン性不飽和結合基、アセチレン基、メチロール基、アルコキシメチル基などが挙げられる。
The content of the terminal encapsulant such as monoamine, acid anhydride, acid chloride, and monocarboxylic acid described above is preferably in the range of 0.1 to 60 mol% of the number of moles of the acid component monomer or the diamine component monomer charged. More preferably ~ 50 mol%. Within such a range, it is possible to obtain a photosensitive resin composition having an appropriate viscosity of the solution when the photosensitive resin composition is applied and having excellent film physical properties.
Further, a polymerizable functional group may be provided at the end of the resin. Examples of the polymerizable functional group include an ethylenically unsaturated group, an acetylene group, a methylol group, an alkoxymethyl group and the like.
樹脂中に導入された末端封止剤は、以下の方法で容易に検出できる。例えば、末端封止剤が導入された樹脂を酸性溶液に溶解し、樹脂の構成単位であるジアミン成分と酸成分に分解し、これをガスクロマトグラフィー(GC)や、NMR測定することにより、末端封止剤を容易に検出できる。これとは別に、末端封止剤が導入された樹脂を直接、熱分解ガスクロマトグラフ(PGC)や赤外スペクトルおよび13C−NMRスペクトル測定することにより検出することが可能である。
(a)アルカリ可溶性樹脂中、ポリイミド、ポリベンゾオキサゾールおよび/またはそれらの前駆体の占める割合は、30重量%以上が好ましい。
さらに感光性樹脂組成物中、(a)アルカリ可溶性樹脂の占める割合は3〜50重量%が好ましい。
The end sealant introduced into the resin can be easily detected by the following method. For example, a resin into which an end-capping agent has been introduced is dissolved in an acidic solution, decomposed into a diamine component and an acid component, which are constituent units of the resin, and this is measured by gas chromatography (GC) or NMR to obtain a terminal. The sealant can be easily detected. Apart from this, the resin into which the terminal encapsulant has been introduced can be directly detected by pyrolysis gas chromatography (PGC) or infrared spectrum and 13 C-NMR spectrum measurement.
(A) The proportion of polyimide, polybenzoxazole and / or precursors thereof in the alkali-soluble resin is preferably 30% by weight or more.
Further, the proportion of the alkali-soluble resin (a) in the photosensitive resin composition is preferably 3 to 50% by weight.
本発明は、(b)ナフトキノンジアジドエステル化物を含有する。
(b)ナフトキノンジアジドエステル化物としては、ポリヒドロキシ化合物にキノンジアジドのスルホン酸がエステルで結合したもの、ポリアミノ化合物にキノンジアジドのスルホン酸がスルホンアミド結合したもの、ポリヒドロキシポリアミノ化合物にキノンジアジドのスルホン酸がエステル結合および/またはスルホンアミド結合したものなどが挙げられる。
The present invention contains (b) a naphthoquinone diazide esterified product.
(B) As the naphthoquinone diazide esterified product, a polyhydroxy compound in which quinone diazide sulfonic acid is bonded by an ester, a polyamino compound in which quinone diazide sulfonic acid is conjugated with a sulfonamide bond, and a polyhydroxypolyamino compound in which quinone diazide sulfonic acid is esterified. Examples thereof include those having a bond and / or a sulfonamide bond.
これらポリヒドロキシ化合物やポリアミノ化合物の官能基全体の50モル%以上がキノンジアジドで置換されていることが好ましい。キノンジアジドは5−ナフトキノンジアジドスルホニル基、4−ナフトキノンジアジドスルホニル基のいずれも好ましく用いられる。また、同一分子中に4−ナフトキノンジアジドスルホニル基、5−ナフトキノンジアジドスルホニル基を有するナフトキノンジアジドスルホニルエステル化合物を含有してもよいし、4−ナフトキノンジアジドスルホニルエステル化合物と5−ナフトキノンジアジドスルホニルエステル化合物の両方を含有してもよい。
感光性樹脂組成物中、(b)ナフトキノンジアジドエステル化物の全体に占める割合は1〜30重量%が好ましい。
It is preferable that 50 mol% or more of all the functional groups of these polyhydroxy compounds and polyamino compounds are substituted with quinonediazide. As the quinone diazide, any of a 5-naphthoquinone diazidosulfonyl group and a 4-naphthoquinone diazidosulfonyl group are preferably used. Further, a naphthoquinone diazidosulfonyl ester compound having a 4-naphthoquinone diazidosulfonyl group and a 5-naphthoquinone diazidosulfonyl group may be contained in the same molecule, or a 4-naphthoquinone diazidosulfonyl ester compound and a 5-naphthoquinone diazidosulfonyl ester compound may be contained. Both may be contained.
The proportion of the (b) naphthoquinone diazide esterified product in the photosensitive resin composition is preferably 1 to 30% by weight.
本発明は、(c)一般式(I)で表される化合物を含む。 The present invention includes (c) a compound represented by the general formula (I).
式中R4、R5、R7、R8は、それぞれ独立に、水酸基、水素原子、炭素数1〜4のアルキル基、炭素数1〜4のアルコキシル基、カルボキシル基、炭素数1〜4のエステル基のいずれかを示す。R6は水酸基、水素原子、炭素数1〜7から選ばれるアルキル基、ヒドロキシベンジル基のいずれかを示し、少なくとも1つのR6は水酸基である。複数のR4、R5、R6は各々同じでも異なっていてもよい。xは1〜5の整数を示す。 In the formula, R 4 , R 5 , R 7 , and R 8 independently have a hydroxyl group, a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxyl group having 1 to 4 carbon atoms, a carboxyl group, and 1 to 4 carbon atoms. Indicates one of the ester groups of. R 6 represents a hydroxyl group, a hydrogen atom, an alkyl group selected from 1 to 7 carbon atoms, or a hydroxybenzyl group, and at least one R 6 is a hydroxyl group. The plurality of R 4 , R 5 , and R 6 may be the same or different. x represents an integer of 1-5.
(c)一般式(I)で表される化合物は前記(c)成分の、前記一般式(I)における前記xが1の成分を80〜92%含みかつ、xが3の成分を7〜15%含みかつ、xが5の成分を1〜5%以上含有する。
(c)一般式(I)で表される化合物の純度は液体クロマトグラフィー法により求めることができる。具体的には、高速液体クロマトグラフィーで、カラムにODSカラムを、展開溶媒にアセトニトリルを用い、検出器波長254nmで検出されたピークの総面積を100%とし、各ピークの面積比から各構造成分の割合(純度)を求めている。
(C) The compound represented by the general formula (I) contains 80 to 92% of the component of the component (c) in which the x is 1 in the general formula (I) and 7 to 7 to the component in which x is 3. It contains 15% and contains 1 to 5% or more of a component having x of 5.
(C) The purity of the compound represented by the general formula (I) can be determined by a liquid chromatography method. Specifically, in high performance liquid chromatography, an ODS column was used as the column and acetonitrile was used as the developing solvent, and the total area of the peaks detected at the detector wavelength of 254 nm was set to 100%, and each structural component was determined from the area ratio of each peak. The ratio (purity) of is calculated.
一般式(I)で表される化合物の前記xが1の成分を80〜92%含むことは一般式(I)で表される化合物の純度が80〜92%であることを意味している。一般式(I)における前記xが1の成分を81〜84%含むことが好ましい。一般式(I)で表される化合物が80%以上であれば保存安定性に優れ、かつ溶液の粘度が適切な感光性樹脂組成物を得ることができる。
さらに一般式(I)で表される化合物は一般式(I)で表されるxが3の成分を7〜15%含む。一般式(I)で表されるxが3の成分を12〜15%以上含むことが好ましい。一般式(I)で表されるxが5の成分を1〜5%含む。一般式(I)で表されるxが5の成分を4〜5%以上含むことが好ましい。一般式(I)で表されるxが3の成分が7%以上、かつ一般式(I)で表されるxが5の成分が1%以上であれば感光性樹脂組成物に対し、一般式(I)で表される化合物の添加量が少量であっても十分な感光特性を付与することができる。また、一般式(I)で表されるxが3の成分の含有量が15%以下、一般式(I)で表されるxが5の成分の含有量が5%以下で現像時の膜減りを抑制することができる。
The fact that the compound represented by the general formula (I) contains 80 to 92% of the component in which x is 1 means that the purity of the compound represented by the general formula (I) is 80 to 92%. .. It is preferable that 81 to 84% of the component in which x is 1 in the general formula (I) is contained. When the compound represented by the general formula (I) is 80% or more, a photosensitive resin composition having excellent storage stability and an appropriate viscosity of the solution can be obtained.
Further, the compound represented by the general formula (I) contains 7 to 15% of the components represented by the general formula (I) in which x is 3. It is preferable that 12 to 15% or more of the components having x of 3 represented by the general formula (I) are contained. It contains 1 to 5% of components having x of 5 represented by the general formula (I). It is preferable that 4 to 5% or more of the components having x of 5 represented by the general formula (I) are contained. If the component of x 3 represented by the general formula (I) is 7% or more and the component of x 5 represented by the general formula (I) is 1% or more, the photosensitive resin composition is generally used. Even if the amount of the compound represented by the formula (I) added is small, sufficient photosensitive characteristics can be imparted. Further, the film at the time of development has a content of a component having x of 3 represented by the general formula (I) of 15% or less and a component having x of 5 represented by the general formula (I) of 5% or less. The decrease can be suppressed.
一般式(I)で表される化合物の前記xが1の成分の好ましい化合物としては2,6−ビス(2,4−ジヒドロキシベンジル)−4−メチルフェノール、2,6−ビス(2,4−ジヒドロキシベンジル)−4−エチルフェノールおよび2,6−ビス(2,4−ジヒドロキシベンジル)−4−tert−ブチルフェノールなどが挙げられる。 Preferred compounds of the compound represented by the general formula (I) in which x is 1 are 2,6-bis (2,4-dihydroxybenzyl) -4-methylphenol and 2,6-bis (2,4). −Dihydroxybenzyl) -4-ethylphenol and 2,6-bis (2,4-dihydroxybenzyl) -4-tert-butylphenol and the like can be mentioned.
このような純度のフェノール性水酸基含有化合物を得る方法としては、2,6−ビス(ヒドロキシメチル)−4−メチルフェノールとレゾルシノールとを反応させる方法や2,6−ビス(ヒドロキシメチル)−4−tert−ブチルフェノールとレゾルシノールとを反応させる方法や2,6−ビス(ヒドロキシメチル)−4−エチルフェノールとレゾルシノールとを反応させる方法などがある。 Examples of a method for obtaining a phenolic hydroxyl group-containing compound having such a purity include a method of reacting 2,6-bis (hydroxymethyl) -4-methylphenol with resorcinol and 2,6-bis (hydroxymethyl) -4-. There are a method of reacting tert-butylphenol with resorcinol and a method of reacting 2,6-bis (hydroxymethyl) -4-ethylphenol with resorcinol.
以下、一般式(1)で表される化合物の前記xが1である成分を3核体、xが3の成分を5核体、xが5の成分7核体と呼ぶ。 Hereinafter, the component of the compound represented by the general formula (1) in which x is 1 is referred to as a trinuclear body, a component in which x is 3 is referred to as a pentucleolus, and a component in which x is 5 is referred to as a component 7 nucleoluus.
感光性樹脂組成物は、(c)フェノール性水酸基含有化合物を(a)アルカリ可溶性樹脂100質量部に対して10質量部以上、30質量部以下含有することが好ましく、(a)アルカリ可溶性樹脂100質量部に対して15質量部以上、25質量部以下含有することがより好ましい。
10質量部以上にすることにより有機溶剤に対する溶解性に優れた樹脂とすることができる。また膜減りを少なく、かつ短時間で現像するために、30質量部以下がより好ましい。
The photosensitive resin composition preferably contains (c) a phenolic hydroxyl group-containing compound in an amount of 10 parts by mass or more and 30 parts by mass or less with respect to 100 parts by mass of (a) alkali-soluble resin, and (a) alkali-soluble resin 100. It is more preferable to contain 15 parts by mass or more and 25 parts by mass or less with respect to parts by mass.
By increasing the amount to 10 parts by mass or more, a resin having excellent solubility in an organic solvent can be obtained. Further, 30 parts by mass or less is more preferable in order to develop with less film loss and in a short time.
感光性樹脂組成物は、(c)フェノール性水酸基含有化合物を(b)ナフトキノンジアジドエステル化物100質量部に対して10質量部以上、70質量部以下含有することが好ましく、(c)フェノール性水酸基含有化合物を(b)ナフトキノンジアジドエステル化物100質量部に対して25質量部以上、50質量部以下含有することが、より好ましい。
10質量部以上含有することにより、フェノール性水酸基含有化合物がナフトキノンジアジドエステル化物と相互作用してポジ型感光性樹脂組成物の感度をさらに向上させることができる。また膜減りを少なくし、かつパターン加工性を向上するために、70質量部以下が好ましい。
The photosensitive resin composition preferably contains (c) a phenolic hydroxyl group-containing compound in an amount of 10 parts by mass or more and 70 parts by mass or less with respect to 100 parts by mass of (b) a naphthoquinone diazide esterified product, and (c) a phenolic hydroxyl group. It is more preferable that the contained compound is contained in an amount of 25 parts by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the (b) naphthoquinone diazide esterified product.
By containing 10 parts by mass or more, the phenolic hydroxyl group-containing compound can interact with the naphthoquinone diazide esterified product to further improve the sensitivity of the positive photosensitive resin composition. Further, in order to reduce film loss and improve pattern processability, 70 parts by mass or less is preferable.
本発明の感光性樹脂組成物は(d)有機溶剤を含有する。具体的には、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、エチレングリコールジメチルエーテル、エチレングリコールジエチルエーテル、エチレングリコールジブチルエーテルなどのエーテル類、エチレングリコールモノエチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート、プロピルアセテート、ブチルアセテート、イソブチルアセテート、3−メトキシブチルアセテート、3−メチル−3−メトキシブチルアセテート、乳酸メチル、乳酸エチル、乳酸ブチルなどのアセテート類、アセチルアセトン、メチルプロピルケトン、メチルブチルケトン、メチルイソブチルケトン、シクロペンタノン、2−ヘプタノンなどのケトン類、ブチルアルコール、イソブチルアルコール、ペンタノール、4−メチル−2−ペンタノール、3−メチル−2−ブタノール、3−メチル−3−メトキシブタノール、ジアセトンアルコールなどのアルコール類、トルエン、キシレンなどの芳香族炭化水素類、N−メチル−2−ピロリドン、N−シクロヘキシル−2−ピロリドン、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、ジメチルスルホキシド、γ−ブチロラクトンなどが挙げられる。これらを2種以上用いてもかまわない。 The photosensitive resin composition of the present invention contains (d) an organic solvent. Specifically, ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and ethylene glycol dibutyl ether, and ethylene glycol monoethyl ether. Acetates, propylene glycol monomethyl ether acetate, propyl acetate, butyl acetate, isobutyl acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl lactate, ethyl lactate, butyl lactate and other acetates, acetylacetone, methylpropyl Ketones such as ketones, methylbutyl ketones, methylisobutylketones, cyclopentanone, 2-heptanone, butyl alcohol, isobutyl alcohol, pentanol, 4-methyl-2-pentanol, 3-methyl-2-butanol, 3- Alcohols such as methyl-3-methoxybutanol and diacetone alcohol, aromatic hydrocarbons such as toluene and xylene, N-methyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N, N-dimethylformamide, N , N-Dimethylacetamide, dimethylsulfoxide, γ-butyrolactone and the like. Two or more of these may be used.
感光性樹脂組成物は、架橋剤を含有してもよい。
架橋剤としては、46DMOC、46DMOEP(商品名、旭有機材工業(株)製)、DMOM−PTBP(商品名、本州化学工業(株)製)、“ニカラック”(登録商標)MX−290(商品名、(株)三和ケミカル製)、B−a型ベンゾオキサジン、B−m型ベンゾオキサジン(商品名、四国化成工業(株)製)、TriML−P、TriML−35XL(商品名、本州化学工業(株)製)、TM−BIP−A(商品名、旭有機材工業(株)製)、TML−BP、TML−HQ、TML−pp−BPF、TML−BPA、TMOM−BP(商品名、本州化学工業(株)製)、ニカラックMX−280、ニカラックMX−270(商品名、(株)三和ケミカル製)、HML−TPPHBA、HML−TPHAP、HMOM−TPPHBA、HMOM−TPHAP(商品名、本州化学工業(株)製)などが挙げられる。
これらの熱架橋剤は、(a)アルカリ可溶性樹脂やその他添加成分を架橋し、硬化後の膜の耐薬品性および硬度を高めることができる。
The photosensitive resin composition may contain a cross-linking agent.
As the cross-linking agent, 46DMOC, 46DMOEP (trade name, manufactured by Asahi Organic Materials Industry Co., Ltd.), DMOM-PTBP (trade name, manufactured by Honshu Chemical Industry Co., Ltd.), "Nicarac" (registered trademark) MX-290 (commodity) Name, Sanwa Chemical Co., Ltd., BA type benzoxazine, Bm type benzoxazine (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd.), TriML-P, TriML-35XL (trade name, Honshu Chemical Co., Ltd.) Industrial Co., Ltd.), TM-BIP-A (trade name, Asahi Organic Materials Industry Co., Ltd.), TML-BP, TML-HQ, TML-pp-BPF, TML-BPA, TMOM-BP (trade name) , Honshu Chemical Industry Co., Ltd., Nicarac MX-280, Nicarac MX-270 (trade name, manufactured by Sanwa Chemical Co., Ltd.), HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (trade name) , Made by Honshu Chemical Industry Co., Ltd.).
These thermal cross-linking agents can (a) cross-link the alkali-soluble resin and other additive components to enhance the chemical resistance and hardness of the cured film.
感光性樹脂組成物は、接着改良剤を含有してもよい。接着改良剤としては、アルコキシシラン含有芳香族アミン化合物、芳香族アミド化合物または芳香族非含有シラン化合物などが挙げられる。これらを2種以上含有してもよい。これらの化合物を含有することにより、焼成後または硬化後の膜と基材との接着性を向上させることができる。アルコキシシラン含有芳香族アミン化合物および芳香族アミド化合物の具体例を以下に示す。この他に、芳香族アミン化合物とアルコキシル基含有ケイ素化合物を反応させて得られる化合物であってもよく、例えば、芳香族アミン化合物と、エポキシ基、クロロメチル基などのアミノ基と反応する基を有するアルコキシシラン化合物を反応させて得られる化合物などが挙げられる。 The photosensitive resin composition may contain an adhesion improver. Examples of the adhesion improver include an alkoxysilane-containing aromatic amine compound, an aromatic amide compound, and an aromatic-free silane compound. Two or more of these may be contained. By containing these compounds, the adhesiveness between the film and the substrate after firing or curing can be improved. Specific examples of the alkoxysilane-containing aromatic amine compound and the aromatic amide compound are shown below. In addition to this, it may be a compound obtained by reacting an aromatic amine compound with an alkoxyl group-containing silicon compound. For example, an aromatic amine compound and a group that reacts with an amino group such as an epoxy group or a chloromethyl group may be used. Examples thereof include a compound obtained by reacting a possessing alkoxysilane compound.
感光性樹脂組成物は、界面活性剤を含有してもよく、基板との塗れ性を向上させることができる。
界面活性剤としては、フロラード(商品名、住友3M(株)製)、“メガファック(登録商標)”(DIC(株)製)、スルフロン(商品名、旭硝子(株)製)などのフッ素系界面活性剤、KP341(商品名、信越化学工業(株)製)、DBE(商品名、チッソ(株)製)、グラノール(商品名、共栄社化学(株)製)、BYK(ビック・ケミー(株)製)などの有機シロキサン界面活性剤、ポリフロー(商品名、共栄社化学(株)製)などのアクリル重合物界面活性剤などが挙げられる。
The photosensitive resin composition may contain a surfactant, and can improve the coatability with the substrate.
Surfactants include fluorine-based surfactants such as Florard (trade name, manufactured by Sumitomo 3M Co., Ltd.), "Megafuck (registered trademark)" (manufactured by DIC Co., Ltd.), and Sulflon (trade name, manufactured by Asahi Glass Co., Ltd.). Surfactants, KP341 (trade name, manufactured by Shinetsu Chemical Industry Co., Ltd.), DBE (trade name, manufactured by Chisso Co., Ltd.), Granol (trade name, manufactured by Kyoeisha Chemical Co., Ltd.), BYK (Big Chemie Co., Ltd.) ) And other organic siloxane surfactants, and polyflow (trade name, manufactured by Kyoeisha Chemical Co., Ltd.) and other acrylic polymer surfactants.
次に、感光性樹脂組成物の製造方法について説明する。例えば、前記(a)〜(d)成分と、必要により熱発色性化合物、有機顔料、染料、密着改良剤、接着改良剤または界面活性剤などを溶解させることにより、感光性樹脂組成物を得ることができる。溶解方法としては、撹拌や加熱が挙げられる。加熱する場合、加熱温度は感光性樹脂組成物の性能を損なわない範囲で設定することが好ましく、通常、室温〜80℃である。また、各成分の溶解順序は特に限定されず、例えば、溶解性の低い化合物から順次溶解させる方法がある。また、界面活性剤や一部の密着改良剤など、撹拌溶解時に気泡を発生しやすい成分については、他の成分を溶解してから最後に添加することで、気泡の発生による他成分の溶解不良を防ぐことができる。 Next, a method for producing the photosensitive resin composition will be described. For example, a photosensitive resin composition is obtained by dissolving the components (a) to (d) and, if necessary, a thermochromic compound, an organic pigment, a dye, an adhesion improver, an adhesion improver, a surfactant, or the like. be able to. Examples of the melting method include stirring and heating. When heating, the heating temperature is preferably set within a range that does not impair the performance of the photosensitive resin composition, and is usually room temperature to 80 ° C. Further, the dissolution order of each component is not particularly limited, and for example, there is a method of sequentially dissolving compounds having low solubility. In addition, for components that easily generate bubbles during stirring and dissolution, such as surfactants and some adhesion improvers, by dissolving other components and then adding them last, the other components are poorly dissolved due to the generation of bubbles. Can be prevented.
得られた感光性樹脂組成物は、濾過フィルターを用いて濾過し、ゴミや粒子を除去することが好ましい。フィルター孔径は、0.01μm〜0.8μmの範囲のものを適宜用いることができる。濾過フィルターの材質には、ポリプロピレン(PP)、ポリエチレン(PE)、ナイロン(NY)、ポリテトラフルオロエチエレン(PTFE)などがあるが、ポリエチレンやナイロンが好ましい。 The obtained photosensitive resin composition is preferably filtered using a filtration filter to remove dust and particles. A filter hole diameter in the range of 0.01 μm to 0.8 μm can be appropriately used. The material of the filtration filter includes polypropylene (PP), polyethylene (PE), nylon (NY), polytetrafluoroethylene (PTFE) and the like, but polyethylene and nylon are preferable.
次に、本発明の感光性樹脂組成物を用いた硬化膜の製造方法について説明する。基板はSi、セラミックス類、ガリウムヒ素、金属、ガラス、金属酸化絶縁膜、窒化ケイ素、ITOなどが一般的に用いられるが、これらに限定されない。感光性樹脂組成物の塗布方法としては、スピン塗布法、スリット塗布法、ディップ塗布法、スプレー塗布法、印刷法などが挙げられる。また、塗布膜厚は、塗布手法、組成物の固形分濃度、粘度などによって異なるが、通常、乾燥後の膜厚が0.1〜150μmになるように塗布される。 Next, a method for producing a cured film using the photosensitive resin composition of the present invention will be described. As the substrate, Si, ceramics, gallium arsenic, metal, glass, metallic oxide insulating film, silicon nitride, ITO and the like are generally used, but the substrate is not limited thereto. Examples of the coating method of the photosensitive resin composition include a spin coating method, a slit coating method, a dip coating method, a spray coating method, and a printing method. The coating film thickness varies depending on the coating method, the solid content concentration of the composition, the viscosity, and the like, but is usually applied so that the film thickness after drying is 0.1 to 150 μm.
次に、感光性樹脂組成物を塗布した基板を乾燥して、感光性樹脂膜を得る。乾燥はオーブン、ホットプレート、赤外線などを使用し、50℃〜150℃の範囲で1分〜数時間行うことが好ましい。 Next, the substrate coated with the photosensitive resin composition is dried to obtain a photosensitive resin film. Drying is preferably carried out in the range of 50 ° C. to 150 ° C. for 1 minute to several hours using an oven, a hot plate, infrared rays or the like.
次に、得られた感光性樹脂膜からパターンを形成する方法について説明する。感光性樹脂膜上に所望のパターンを有するマスクを通して化学線を照射する。露光に用いられる化学線としては紫外線、可視光線、電子線、X線などがあるが、本発明では水銀灯のi線(365nm)、h線(405nm)、g線(436nm)を用いることが好ましい。 Next, a method of forming a pattern from the obtained photosensitive resin film will be described. The chemical line is irradiated through a mask having a desired pattern on the photosensitive resin film. Chemical rays used for exposure include ultraviolet rays, visible rays, electron beams, X-rays, etc., but in the present invention, it is preferable to use i-rays (365 nm), h-rays (405 nm), and g-rays (436 nm) of mercury lamps. ..
露光後、現像液を用いて露光部を除去することによって所望のパターンを形成する。現像液としては、テトラメチルアンモニウム、ジエタノールアミン、ジエチルアミノエタノール、水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、炭酸カリウム、トリエチルアミン、ジエチルアミン、メチルアミン、ジメチルアミン、酢酸ジメチルアミノエチル、ジメチルアミノエタノール、ジメチルアミノエチルメタクリレート、シクロヘキシルアミン、エチレンジアミン、ヘキサメチレンジアミンなどのアルカリ性を示す化合物の水溶液が好ましい。また場合によっては、これらのアルカリ水溶液にN−メチル−2−ピロリドン、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、ジメチルスルホキシド、γ−ブチロラクトン、ジメチルアクリルアミドなどの極性溶媒、メタノール、エタノール、イソプロパノールなどのアルコール類、乳酸エチル、プロピレングリコールモノメチルエーテルアセテートなどのエステル類、シクロペンタノン、シクロヘキサノン、イソブチルケトン、メチルイソブチルケトンなどのケトン類などを単独あるいは数種を組み合わせたものを添加してもよい。現像後は水にてリンス処理をすることが一般的である。ここでもエタノール、イソプロピルアルコールなどのアルコール類、乳酸エチル、プロピレングリコールモノメチルエーテルアセテートなどのエステル類などを水に加えてリンス処理をしてもよい。 After exposure, a desired pattern is formed by removing the exposed portion with a developer. The developing solution includes tetramethylammonium, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, and dimethylaminoethyl. An aqueous solution of an alkaline compound such as methacrylate, cyclohexylamine, ethylenediamine and hexamethylenediamine is preferable. In some cases, these alkaline aqueous solutions are mixed with polar solvents such as N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethylsulfoxide, γ-butyrolactone and dimethylacrylamide, methanol, ethanol, etc. Alcohols such as isopropanol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, and ketones such as cyclopentanone, cyclohexanone, isobutyl ketone and methyl isobutyl ketone may be added alone or in combination of several types. Good. After development, it is common to rinse with water. Here, too, alcohols such as ethanol and isopropyl alcohol, and esters such as ethyl lactate and propylene glycol monomethyl ether acetate may be added to water for rinsing.
次に、得られた感光性樹脂膜のパターンを加熱して硬化膜を得る。例えば、120〜400℃で1分間〜10時間加熱処理する方法、硬化触媒などを加えて室温〜100℃程度の低温で加熱処理する方法、超音波や電磁波処理により室温〜100℃程度の低温で硬化する方法などが挙げられる。 Next, the pattern of the obtained photosensitive resin film is heated to obtain a cured film. For example, a method of heat-treating at 120 to 400 ° C. for 1 minute to 10 hours, a method of heat-treating at a low temperature of about room temperature to 100 ° C. by adding a curing catalyst, and a method of heat-treating at a low temperature of about room temperature to 100 ° C. by ultrasonic wave or electromagnetic wave treatment. Examples include a method of curing.
感光性樹脂組成物を硬化してなる硬化膜は、LSIなど半導体デバイスの表面保護膜や層間絶縁膜、有機EL素子の絶縁膜、表示素子用TFT基板の平坦化膜、回路基板の配線保護膜、固体撮像素子のオンチップマイクロレンズや各種ディスプレイ・固体撮像素子用平坦化膜などの用途に好ましく用いることができる。 The cured film obtained by curing the photosensitive resin composition is a surface protective film or interlayer insulating film for semiconductor devices such as LSIs, an insulating film for organic EL elements, a flattening film for TFT substrates for display elements, and a wiring protective film for circuit substrates. , It can be preferably used for applications such as on-chip microlenses of solid-state image sensors and flattening films for various displays and solid-state image sensors.
以下実施例等をあげて本発明を説明するが、本発明はこれらの例によって限定されるものではない。なお、実施例中の感光性樹脂組成物の評価は以下の方法により行った。 Hereinafter, the present invention will be described with reference to Examples and the like, but the present invention is not limited to these examples. The photosensitive resin composition in the examples was evaluated by the following method.
(1)感光性樹脂組成物被膜の作製
6インチシリコンウエハ上に、感光性樹脂組成物(以下ワニスと呼ぶ)をプリベーク後の膜厚が10μmとなるように塗布し、ついでホットプレート(東京エレクトロン(株)製Mark−7)を用いて、100℃で3分プリベークすることにより、感光性樹脂組成物被膜を得た。
(1) Preparation of Photosensitive Resin Composition Film A photosensitive resin composition (hereinafter referred to as varnish) is applied onto a 6-inch silicon wafer so that the film thickness after prebaking is 10 μm, and then a hot plate (Tokyo Electron) is applied. A photosensitive resin composition film was obtained by prebaking at 100 ° C. for 3 minutes using Mark-7) manufactured by Co., Ltd.
(2)膜厚の測定方法
大日本スクリーン製造(株)製ラムダエースSTM−602を使用し、屈折率1.63で測定を行った。
(2) Method for measuring film thickness A Lambda Ace STM-602 manufactured by Dainippon Screen Mfg. Co., Ltd. was used, and the measurement was performed with a refractive index of 1.63.
(3)露光
露光機(ウルトラテック(株)社製全波長ステッパーSpectrum 3e)に、パターンの切られたレチクルをセットし、上記方法(1)の感光性樹脂組成物被膜に対して、露光量500mJ/cm2(i線換算)で全波長露光を行った。
(3) Exposure A reticle with a cut pattern is set in an exposure machine (all-wavelength stepper Spectrum 3e manufactured by Ultratech Co., Ltd.), and the amount of exposure to the photosensitive resin composition coating of the above method (1). All wavelength exposure was performed at 500 mJ / cm 2 (i-line conversion).
(4)露光後ベーク
上記方法(3)の露光後の感光性樹脂組成物被膜に対して、ホットプレート(東京エレクトロン(株)製Mark−7)を用いて100℃で1分熱処理を行った。
(4) Bake after exposure The photosensitive resin composition film after exposure of the above method (3) was heat-treated at 100 ° C. for 1 minute using a hot plate (Mark-7 manufactured by Tokyo Electron Limited). ..
(5)現像
上記方法(4)の露光後ベークした感光性樹脂組成物被膜に対して、東京エレクトロン(株)製Mark−7の現像装置を用い、50回転で水酸化テトラメチルアンモニウムの2.38%水溶液を10秒間噴霧した。この後、0回転で80秒間静置した後400回転で水にてリンス処理し、3000回転で10秒振り切り乾燥し、現像後被膜を得た。
(5) Development The photosensitive resin composition film baked after the exposure of the above method (4) was subjected to 2. Tetramethylammonium hydroxide at 50 rpm using a Mark-7 developing device manufactured by Tokyo Electron Limited. A 38% aqueous solution was sprayed for 10 seconds. Then, the mixture was allowed to stand at 0 rpm for 80 seconds, rinsed with water at 400 rpm, shaken off at 3000 rpm for 10 seconds, and dried to obtain a film after development.
(6)残膜率の測定
残膜率は以下の式に従って算出した。
残膜率(%)=現像後の膜厚÷プリベーク後の膜厚×100。
(6) Measurement of residual film ratio The residual film ratio was calculated according to the following formula.
Residual film ratio (%) = film thickness after development ÷ film thickness after prebaking × 100.
(7)感度の評価
露光から露光後ベークまでの放置時間を60分として、露光量を50−1200mJ/cm2の範囲で25mJ/cm2きざみで露光を行い現像後の残膜率を算出し、残膜率が一定となるときの露光量を最小露光量とした。
(7) the standing time of the evaluation exposure sensitivity to post-exposure bake of 60 minutes, exposure to an exposure amount in the range of 50-1200mJ / cm 2 at 25 mJ / cm 2 increments to calculate the residual film rate after development The minimum exposure amount was set as the exposure amount when the residual film ratio became constant.
(8)耐薬品性の評価
露光量500mJ/cm2で上記方法(5)により作製した現像後被膜を、露光から露光後ベークまでの放置時間0分で、イナートオーブンINH−21CD(光洋サーモシステム(株)社製)を用いて、窒素気流下(酸素濃度20ppm以下)、280℃で60分熱処理を行った。このキュア膜を、東京応化工業(株)製剥離液106を用いて50℃10分間浸漬処理を行い、処理前後の膜厚を測定し、膜厚減少量を求めた。
(8) Evaluation of chemical resistance The developed film prepared by the above method (5) at an exposure amount of 500 mJ / cm 2 was left to stand for 0 minutes from exposure to post-exposure baking in an inert oven INH-21CD (Koyo Thermo System). A heat treatment was performed at 280 ° C. for 60 minutes under a nitrogen stream (oxygen concentration of 20 ppm or less) using a product manufactured by Co., Ltd. This cure film was immersed in a stripping solution 106 manufactured by Tokyo Ohka Kogyo Co., Ltd. at 50 ° C. for 10 minutes, and the film thickness before and after the treatment was measured to determine the amount of film thickness reduction.
(合成例1)ヒドロキシル基含有ジアミン化合物(HA)の合成
2,2−ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン(セントラル硝子(株)製、BAHF)18.3g(0.05モル)をアセトン100mL、プロピレンオキシド(東京化成(株)製)17.4g(0.3モル)に溶解させ、−15℃に冷却した。ここに3−ニトロベンゾイルクロリド(東京化成(株)製)20.4g(0.11モル)をアセトン100mLに溶解させた溶液を滴下した。滴下終了後、−15℃で4時間撹拌し、その後室温に戻した。析出した白色固体を濾別し、50℃で真空乾燥した。
(Synthesis Example 1) Synthesis of hydroxyl group-containing diamine compound (HA) 18.3 g (0.05) of 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (manufactured by Central Glass Co., Ltd., BAHF) (Mole) was dissolved in 100 mL of acetone and 17.4 g (0.3 mol) of propylene oxide (manufactured by Tokyo Kasei Co., Ltd.) and cooled to −15 ° C. A solution prepared by dissolving 20.4 g (0.11 mol) of 3-nitrobenzoyl chloride (manufactured by Tokyo Kasei Co., Ltd.) in 100 mL of acetone was added dropwise thereto. After completion of the dropping, the mixture was stirred at −15 ° C. for 4 hours and then returned to room temperature. The precipitated white solid was filtered off and vacuum dried at 50 ° C.
得られた白色固体30gを300mLのステンレスオートクレーブに入れ、メチルセルソルブ250mLに分散させ、5%パラジウム−炭素(和光純薬(株)製)を2g加えた。ここに水素を風船で導入して、還元反応を室温で行った。約2時間後、風船がこれ以上しぼまないことを確認して反応を終了させた。反応終了後、濾過して触媒であるパラジウム化合物を除き、ロータリーエバポレーターで濃縮し、下記式で表されるヒドロキシル基含有ジアミン化合物(HA)を得た。 30 g of the obtained white solid was placed in a 300 mL stainless autoclave, dispersed in 250 mL of methyl cell solve, and 2 g of 5% palladium-carbon (manufactured by Wako Pure Chemical Industries, Ltd.) was added. Hydrogen was introduced into this with a balloon, and the reduction reaction was carried out at room temperature. After about 2 hours, the reaction was terminated after confirming that the balloon did not deflate any more. After completion of the reaction, the palladium compound as a catalyst was removed by filtration, and the mixture was concentrated on a rotary evaporator to obtain a hydroxyl group-containing diamine compound (HA) represented by the following formula.
(合成例2)ノボラック樹脂の合成
乾燥窒素気流下、m−クレゾール108.0g(1.00モル)、37重量%ホルムアルデヒド水溶液75.5g(ホルムアルデヒド0.93モル)、シュウ酸二水和物0.63g(0.005モル)、メチルイソブチルケトン264gを仕込んだ後、油浴中に浸し、反応液を還流させながら4時間重縮合反応を行った。その後、油浴の温度を3時間かけて昇温させ、その後にフラスコ内の圧力を減圧して揮発分を除去し、室温まで冷却してノボラック樹脂を得た。
(Synthesis Example 2) Synthesis of Novolac Resin Under a dry nitrogen stream, m-cresol 108.0 g (1.00 mol), 37 wt% formaldehyde aqueous solution 75.5 g (formaldehyde 0.93 mol), oxalic acid dihydrate 0 After charging .63 g (0.005 mol) and 264 g of methyl isobutyl ketone, the mixture was immersed in an oil bath and a polycondensation reaction was carried out for 4 hours while refluxing the reaction solution. Then, the temperature of the oil bath was raised over 3 hours, and then the pressure in the flask was reduced to remove volatile components, and the mixture was cooled to room temperature to obtain a novolak resin.
(合成例3)キノンジアジド化合物Iの合成
乾燥窒素気流下、TrisP−PA(商品名、本州化学工業(株)製)21.22g(0.05モル)と5−ナフトキノンジアジドスルホニル酸クロリド26.86g(0.10モル)、4−ナフトキノンジアジドスルホニル酸クロリド13.43g(0.05モル)を1,4−ジオキサン50gに溶解させ、室温にした。ここに、1,4−ジオキサン50gと混合したトリエチルアミン15.18gを、系内が35℃以上にならないように滴下した。滴下後30℃で2時間撹拌した。トリエチルアミン塩を濾過し、ろ液を水に投入した。その後、析出した沈殿をろ過で集めた。この沈殿を真空乾燥機で乾燥させ、下記式で表されるキノンジアジド化合物Iを得た。
(Synthesis Example 3) Synthesis of quinonediazide compound I 21.22 g (0.05 mol) and 5-naphthoquinonediazide sulfonyl acid chloride 26.86 g of TrisP-PA (trade name, manufactured by Honshu Chemical Industry Co., Ltd.) under a dry nitrogen stream. (0.10 mol), 13.43 g (0.05 mol) of 4-naphthoquinonediazidesulfonyl acid chloride was dissolved in 50 g of 1,4-dioxane and brought to room temperature. To this, 15.18 g of triethylamine mixed with 50 g of 1,4-dioxane was added dropwise so that the temperature inside the system did not exceed 35 ° C. After the dropping, the mixture was stirred at 30 ° C. for 2 hours. The triethylamine salt was filtered and the filtrate was added to water. Then, the precipitated precipitate was collected by filtration. This precipitate was dried in a vacuum dryer to obtain quinonediazide compound I represented by the following formula.
(合成例4)キノンジアジド化合物IIの合成
乾燥窒素気流下、TrisP−HAP(商品名、本州化学工業社製)15.31g(0.05モル)と5−ナフトキノンジアジドスルホニル酸クロリド40.28g(0.15モル)を1,4−ジオキサン450gに溶解させ、室温にしたほかは、合成例3と同様にして下記式で表されるキノンジアジド化合物IIを得た。
(Synthesis Example 4) Synthesis of quinonediazide compound II 15.31 g (0.05 mol) of TrisP-HAP (trade name, manufactured by Honshu Kagaku Kogyo Co., Ltd.) and 40.28 g (0) of 5-naphthoquinonediazidesulfonyl acid chloride under a dry nitrogen stream. .15 mol) was dissolved in 450 g of 1,4-dioxane to bring it to room temperature, and a quinonediazide compound II represented by the following formula was obtained in the same manner as in Synthesis Example 3.
(合成例5)フェノール性水酸基含有化合物Iの合成
4メチルフェノール100gにパラホルムアルデヒド150gを加え、これにTMAH 25%水溶液を加え50℃で7時間反応後、メタノール180mlとイオン交換水285mlを添加して10℃以下に冷却して結晶析出を行い2,6−ビス(ヒドロキシメチル)−4−メチルフェノールを得た。
この2,6−ビス(ヒドロキシメチル)−4−メチルフェノール15gに対しレゾルシノール180gを加え、これに塩酸1.0gとイオン交換水60mlを加えて50℃で4時間反応後、メタノール10mlとイオン交換水300mlを添加して10℃以下に冷却、結晶析出を行い白色の結晶であるフェノール性水酸基含有化合物Iを得た。得られたフェノール性水酸基含有化合物の純度は、島津製作所(株)製の高速液体クロマトグラフィーで、カラムにODSカラムを、展開溶媒にアセトニトリルを用い、検出器波長254nmで分析したところ、検出された各ピークの面積比から3核体81%、5核体14%、7核体5%であった。
(Synthesis Example 5) Synthesis of phenolic hydroxyl group-containing compound I 150 g of paraformaldehyde was added to 100 g of 4-methylphenol, a 25% aqueous solution of TMAH was added thereto, and the reaction was carried out at 50 ° C. for 7 hours, and then 180 ml of methanol and 285 ml of ion-exchanged water were added. The mixture was cooled to 10 ° C. or lower and crystallized to obtain 2,6-bis (hydroxymethyl) -4-methylphenol.
180 g of resorcinol is added to 15 g of this 2,6-bis (hydroxymethyl) -4-methylphenol, 1.0 g of hydrochloric acid and 60 ml of ion-exchanged water are added thereto, and the reaction is carried out at 50 ° C. for 4 hours, followed by ion exchange with 10 ml of methanol. 300 ml of water was added and cooled to 10 ° C. or lower, and crystal precipitation was carried out to obtain a phenolic hydroxyl group-containing compound I which is a white crystal. The purity of the obtained phenolic hydroxyl group-containing compound was detected by high performance liquid chromatography manufactured by Shimadzu Corporation, using an ODS column as the column and acetonitrile as the developing solvent at a detector wavelength of 254 nm. From the area ratio of each peak, it was 81% for trinuclear bodies, 14% for 5 nuclei, and 5% for 7 nuclei.
(合成例6)フェノール性水酸基含有化合物IIの合成
4−tert−ブチルフェノール100gにパラホルムアルデヒド190gを加え、これにTMAH25%水溶液を加え50℃で8時間反応後、メタノール180mlとイオン交換水285mlを添加して10℃以下に冷却して結晶析出を行い2,6−ビス(ヒドロキシメチル)−4−tert−ブチルフェノールを得た。
この2,6−ビス(ヒドロキシメチル)−4−tert−ブチルフェノール15gに対しレゾルシノール230gを加えたほかは、合成例3と同様に製造した。得られたフェノール性水酸基含有化合物の純度は3核体91%、5核体7%、7核体2%であった。
(Synthesis Example 6) Synthesis of Phenolic Hydroxyl Group-Containing Compound II 190 g of paraformaldehyde is added to 100 g of 4-tert-butylphenol, a 25% aqueous solution of TMAH is added thereto, the reaction is carried out at 50 ° C. for 8 hours, and then 180 ml of methanol and 285 ml of ion-exchanged water are added. Then, the mixture was cooled to 10 ° C. or lower and crystallized to obtain 2,6-bis (hydroxymethyl) -4-tert-butylphenol.
It was produced in the same manner as in Synthesis Example 3 except that 230 g of resorcinol was added to 15 g of this 2,6-bis (hydroxymethyl) -4-tert-butylphenol. The purity of the obtained phenolic hydroxyl group-containing compound was 91% trinuclear, 7% pentanucleus, and 2% 7 nuclei.
(合成例7)フェノール性水酸基含有化合物IIIの合成
4−エチルフェノール100gにパラホルムアルデヒド165gを加え、合成例3と同様に製造し2,6−ビス(ヒドロキシメチル)−4−エチルフェノールを得た。
この2,6−ビス(ヒドロキシメチル)−4−エチルフェノール15gに対しレゾルシノール215gを加えた他は、合成例3と同様に製造した。得られたフェノール性水酸基含有化合物を合成例5と同様の方法で純度を求めた。純度は3核体86%、5核体10%、7核体4%であった。
(Synthesis Example 7) Synthesis of phenolic hydroxyl group-containing compound III 165 g of paraformaldehyde was added to 100 g of 4-ethylphenol to produce 2,6-bis (hydroxymethyl) -4-ethylphenol in the same manner as in Synthesis Example 3. ..
It was produced in the same manner as in Synthesis Example 3 except that 215 g of resorcinol was added to 15 g of this 2,6-bis (hydroxymethyl) -4-ethylphenol. The purity of the obtained phenolic hydroxyl group-containing compound was determined by the same method as in Synthesis Example 5. The purity was 86% for trinuclear bodies, 10% for 5 nuclei, and 4% for 7 nuclei.
(合成例8)フェノール性水酸基含有化合物IVの合成
2,6−ビス(ヒドロキシメチル)−4−メチルフェノール15gに対しレゾルシノール120gを加えた他は、合成例5と同様に製造した。得られたフェノール性水酸基含有化合物を合成例5と同様の方法で純度を求めた。純度は3核体51%、5核体30%、7核体19%であった。
(Synthesis Example 8) Synthesis of phenolic hydroxyl group-containing compound IV 120 g of resorcinol was added to 15 g of 2,6-bis (hydroxymethyl) -4-methylphenol, and the same as in Synthesis Example 5 was produced. The purity of the obtained phenolic hydroxyl group-containing compound was determined by the same method as in Synthesis Example 5. The purity was 51% for 3 nucleoli, 30% for 5 nucleoli, and 19% for 7 nucleoli.
(一般式(I)で表される化合物ではないフェノール性水酸基含有化合物)
フェノール性水酸基含有化合物として、上記合成例のほかTrisP−HAP(本州化学工業(株)製)、TRISP−PA−MF(本州化学工業(株)製)及びTekP−4HBPA(東洋合成製)をそれぞれ使用した。
(A phenolic hydroxyl group-containing compound that is not a compound represented by the general formula (I))
In addition to the above synthesis examples, TrisP-HAP (manufactured by Honshu Chemical Industry Co., Ltd.), TRISP-PA-MF (manufactured by Honshu Chemical Industry Co., Ltd.) and TekP-4HBPA (manufactured by Toyo Synthetic Co., Ltd.) are used as phenolic hydroxyl group-containing compounds. used.
(実施例1)
乾燥窒素気流下、合成例1で得られたヒドロキシル基含有ジアミン57.4g(0.095モル)、SiDA1.24g(0.005モル)をNMP200gに溶解した。ここにODPA31.0g(マナック(株)製、0.1モル、)を加え、40℃で2時間攪拌した。その後、ジメチルホルアミドジメチルアセタール(三菱レーヨン(株)製、DFA)7.14g(0.06モル)をNMP5gで希釈した溶液を10分かけて滴下した。滴下後、40℃で2時間攪拌を続けた。攪拌終了後、溶液を水2Lに投入して、ポリマー固体の沈殿をろ過で集めた。さらに水2Lで3回洗浄を行い、集めたポリマー固体を50℃の真空乾燥機で72時間乾燥しポリアミド酸ポリマーを得た。
(Example 1)
Under a dry nitrogen air stream, 57.4 g (0.095 mol) of the hydroxyl group-containing diamine and 1.24 g (0.005 mol) of SiDA obtained in Synthesis Example 1 were dissolved in 200 g of NMP. To this, 31.0 g of ODPA (manufactured by Manac Inc., 0.1 mol) was added, and the mixture was stirred at 40 ° C. for 2 hours. Then, a solution of 7.14 g (0.06 mol) of dimethylformamide dimethyl acetal (DFA manufactured by Mitsubishi Rayon Co., Ltd.) diluted with 5 g of NMP was added dropwise over 10 minutes. After the dropping, stirring was continued at 40 ° C. for 2 hours. After the stirring was completed, the solution was poured into 2 L of water, and the precipitate of the polymer solid was collected by filtration. Further, the mixture was washed 3 times with 2 L of water, and the collected polymer solid was dried in a vacuum dryer at 50 ° C. for 72 hours to obtain a polyamic acid polymer.
このようにして得たポリアミド酸ポリマー10gを計り、合成例5で得られたフェノール性水酸基含有化合物Iを3gと合成例3で得られたキノンジアジド化合物I3.5gをガンマブチロラクトン20gに溶解させて感光性樹脂組成物のワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。 10 g of the polyamic acid polymer thus obtained was weighed, and 3 g of the phenolic hydroxyl group-containing compound I obtained in Synthesis Example 5 and 3.5 g of the quinonediazide compound I obtained in Synthesis Example 3 were dissolved in 20 g of gamma butyrolactone for exposure. A varnish with a sex resin composition was obtained. Using the obtained varnish, a photosensitive resin composition film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(実施例2)
フェノール性水酸基含有化合物として、合成例6で得られたフェノール性水酸基含有化合物IIを1.5gと合成例4で得られたキノンジアジド化合物Iを1.5g用いた以外は実施例1と同様にして、ワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。
(Example 2)
As the phenolic hydroxyl group-containing compound, 1.5 g of the phenolic hydroxyl group-containing compound II obtained in Synthesis Example 6 and 1.5 g of the quinonediazide compound I obtained in Synthesis Example 4 were used in the same manner as in Example 1. , Got a varnish. Using the obtained varnish, a photosensitive resin composition film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(実施例3)
フェノール性水酸基含有化合物として、合成例7で得られたフェノール性水酸基含有化合物IIIを1gと合成例3で得られたキノンジアジド化合物Iを11g用いた以外は実施例1と同様にして、ワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。
(Example 3)
A varnish was obtained in the same manner as in Example 1 except that 1 g of the phenolic hydroxyl group-containing compound III obtained in Synthesis Example 7 and 11 g of the quinonediazide compound I obtained in Synthesis Example 3 were used as the phenolic hydroxyl group-containing compound. It was. Using the obtained varnish, a photosensitive resin composition film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(実施例4)
フェノール性水酸基含有化合物として、合成例5で得られたフェノール性水酸基含有化合物Iを1.5gと合成例3で得られたキノンジアジド化合物Iを3g用いた以外は実施例1と同様にして、ワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。
(Example 4)
The varnish was the same as in Example 1 except that 1.5 g of the phenolic hydroxyl group-containing compound I obtained in Synthesis Example 5 and 3 g of the quinonediazide compound I obtained in Synthesis Example 3 were used as the phenolic hydroxyl group-containing compound. Got Using the obtained varnish, a photosensitive resin composition film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(実施例5)
フェノール性水酸基含有化合物として、合成例5で得られたフェノール性水酸基含有化合物Iを1.5gと合成例3で得られたキノンジアジド化合物Iを8.5g用いた以外は実施例1と同様にして、ワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。
(Example 5)
As the phenolic hydroxyl group-containing compound, 1.5 g of the phenolic hydroxyl group-containing compound I obtained in Synthesis Example 5 and 8.5 g of the quinone diazide compound I obtained in Synthesis Example 3 were used in the same manner as in Example 1. , Got a varnish. Using the obtained varnish, a photosensitive resin composition film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(実施例6)
フェノール性水酸基含有化合物として、合成例5で得られたフェノール性水酸基含有化合物Iを1.5gと合成例3で得られたキノンジアジド化合物Iを13.5g用いた以外は実施例1と同様にして、ワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。
(Example 6)
As the phenolic hydroxyl group-containing compound, 1.5 g of the phenolic hydroxyl group-containing compound I obtained in Synthesis Example 5 and 13.5 g of the quinone diazide compound I obtained in Synthesis Example 3 were used in the same manner as in Example 1. , Got a varnish. Using the obtained varnish, a photosensitive resin composition film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(実施例7)
乾燥窒素気流下、BAHF32.9g(0.09モル)をNMP500gに溶解させた。ここに3,3’,4,4’−ジフェニルエーテルテトラカルボン酸二無水物31.0g(0.1モル、マナック(株)製、ODPA)をNMP50gとともに加えて、30℃で2時間攪拌した。その後、3−アミノフェノール2.18g(0.02モル、東京化成(株)製)を加え、40℃で2時間攪拌を続けた。さらにピリジン5g(東京化成(株)製)をトルエン30g(東京化成(株)製)に希釈して、溶液に加え、冷却管を付け系外に水をトルエンとともに共沸で除去しながら溶液の温度を120℃にして2時間、さらに180℃で2時間反応させた。この溶液の温度が室温にまで低下したら、水3Lに溶液を投入し、白色の粉体を得た。この粉体をろ過で集め、さらに水で3回洗浄を行った。洗浄後、白色粉体を50℃の真空乾燥機で72時間乾燥させた。こうしてポリイミドポリマー粉体を得た。
(Example 7)
32.9 g (0.09 mol) of BAHF was dissolved in 500 g of NMP under a dry nitrogen stream. To this, 31.0 g (0.1 mol, ODPA manufactured by Manac Inc.) of 3,3', 4,4'-diphenyl ether tetracarboxylic dianhydride was added together with 50 g of NMP, and the mixture was stirred at 30 ° C. for 2 hours. Then, 2.18 g (0.02 mol, manufactured by Tokyo Kasei Co., Ltd.) of 3-aminophenol was added, and stirring was continued at 40 ° C. for 2 hours. Further, 5 g of pyridine (manufactured by Tokyo Kasei Co., Ltd.) is diluted with 30 g of toluene (manufactured by Tokyo Kasei Co., Ltd.), added to the solution, and a cooling tube is attached to remove water from the system by azeotropic distillation. The reaction was carried out at a temperature of 120 ° C. for 2 hours and further at 180 ° C. for 2 hours. When the temperature of this solution dropped to room temperature, the solution was poured into 3 L of water to obtain a white powder. This powder was collected by filtration and further washed with water three times. After washing, the white powder was dried in a vacuum dryer at 50 ° C. for 72 hours. In this way, a polyimide polymer powder was obtained.
このポリイミドポリマー粉体10gに合成例5で得られたフェノール性水酸基含有化合物Iを1.5gと合成例3で得られたキノンジアジド化合物I8.5gをガンマブチロラクトン20gに溶解させて感光性樹脂組成物のワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。 A photosensitive resin composition obtained by dissolving 1.5 g of the phenolic hydroxyl group-containing compound I obtained in Synthesis Example 5 and 8.5 g of the quinone diazide compound I obtained in Synthesis Example 3 in 10 g of this polyimide polymer powder in 20 g of gamma butyrolactone. I got the varnish. Using the obtained varnish, a photosensitive resin composition film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(実施例8)
合成例2で得られたノボラック樹脂10gを計り、合成例5で得られたフェノール性水酸基含有化合物Iを1.5gと合成例3で得られたキノンジアジド化合物I8.5gをガンマブチロラクトン20gに溶解させて感光性樹脂組成物のワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。
(Example 8)
Weigh 10 g of the novolak resin obtained in Synthesis Example 2, and dissolve 1.5 g of the phenolic hydroxyl group-containing compound I obtained in Synthesis Example 5 and 8.5 g of the quinone diazide compound I obtained in Synthesis Example 3 in 20 g of gamma butyrolactone. The varnish of the photosensitive resin composition was obtained. Using the obtained varnish, a photosensitive resin film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(比較例1)
合成例2で得られたノボラック樹脂10gを計り、合成例8で得られたフェノール性水酸基含有化合物IVを3.5gと合成例3で得られたキノンジアジド化合物I4.4gをガンマブチロラクトン20gに溶解させて感光性樹脂組成物のワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。
(Comparative Example 1)
Weighing 10 g of the novolak resin obtained in Synthesis Example 2, 3.5 g of the phenolic hydroxyl group-containing compound IV obtained in Synthesis Example 8 and 4.4 g of the quinone diazide compound I obtained in Synthesis Example 3 were dissolved in 20 g of gamma butyrolactone. The varnish of the photosensitive resin composition was obtained. Using the obtained varnish, a photosensitive resin film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(比較例2)
フェノール性水酸基含有化合物として、TRISP−HAP(本州化学工業社製)を0.5gと合成例4で得られたキノンジアジド化合物I5.5gを用いた以外は実施例7と同様にして感光性樹脂組成物のワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。
(Comparative Example 2)
The photosensitive resin composition was the same as in Example 7 except that 0.5 g of TRISP-HAP (manufactured by Honshu Chemical Industry Co., Ltd.) and 5.5 g of the quinone diazide compound I obtained in Synthesis Example 4 were used as the phenolic hydroxyl group-containing compound. I got a varnish of things. Using the obtained varnish, a photosensitive resin composition film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(比較例3)
フェノール性水酸基含有化合物として、TRISP−PA−MF(本州化学工業社製)を4.0gと合成例3で得られたキノンジアジド化合物I4.4gを用いた以外は実施例1と同様にしてワニスを得た。得られたワニスを用いて、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像、熱処理してワニスの感度、残膜率、耐薬品性について評価を行った。
(Comparative Example 3)
As the phenolic hydroxyl group-containing compound, 4.0 g of TRISP-PA-MF (manufactured by Honshu Chemical Industry Co., Ltd.) and 4.4 g of the quinonediazide compound I obtained in Synthesis Example 3 were used, and the varnish was prepared in the same manner as in Example 1. Obtained. Using the obtained varnish, a photosensitive resin composition film was prepared on a silicon wafer, exposed, developed, and heat-treated to evaluate the sensitivity, residual film ratio, and chemical resistance of the varnish.
(比較例4)
フェノール性水酸基含有化合物として、TekP−4HBPA(本州化学工業社製)を0.5gと合成例4で得られたキノンジアジド化合物IIを5.5g用いた以外は実施例8と同様にしてワニスを得た。得られたワニスを用いて前記のように、シリコンウエハー上に感光性樹脂組成物膜を作製、露光、現像しワニスの感度、残膜率について評価を行った。
(Comparative Example 4)
A varnish was obtained in the same manner as in Example 8 except that 0.5 g of TekP-4HBPA (manufactured by Honshu Chemical Industry Co., Ltd.) and 5.5 g of the quinonediazide compound II obtained in Synthesis Example 4 were used as the phenolic hydroxyl group-containing compound. It was. Using the obtained varnish, a photosensitive resin composition film was prepared, exposed and developed on a silicon wafer as described above, and the sensitivity and residual film ratio of the varnish were evaluated.
実施例1〜8、比較例1〜4の組成および評価結果を表1および2に示す。 The compositions and evaluation results of Examples 1 to 8 and Comparative Examples 1 to 4 are shown in Tables 1 and 2.
Claims (8)
(b)ナフトキノンジアジドエステル化物と、
(c)一般式(I)で表される化合物と、
(d)有機溶剤を含有する感光性樹脂組成物であって、
該(c)一般式(I)で表される化合物の液体クロマトグラフィー法により検出器波長254nmで検出されたピークの総面積100%に対して、該一般式(I)のxが1である化合物に関するピークの面積が80〜92%でありかつ、xが3である化合物に関するピークの面積が7〜15%でありかつ、xが5である化合物に関するピークの面積が1〜5%でありかつ、該(c)一般式(I)で表される化合物が(a)アルカリ可溶性樹脂100質量部に対して10質量部以上、30質量部以下を含有する感光性樹脂組成物。
(B) Naftquinone diazide esterified product and
(C) The compound represented by the general formula (I) and
(D) A photosensitive resin composition containing an organic solvent.
The x of the general formula (I) is 1 with respect to 100% of the total area of the peak detected at the detector wavelength of 254 nm by the liquid chromatography method of the compound represented by the general formula (I) (c). The area of the peak for the compound is 80-92%, the area of the peak for the compound where x is 3 is 7 to 15%, and the area of the peak for the compound where x is 5 is 1-5%. A photosensitive resin composition containing 10 parts by mass or more and 30 parts by mass or less of the compound represented by the general formula (I) with respect to 100 parts by mass of (a) alkali-soluble resin.
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