JP2020158575A - Conductive composition - Google Patents
Conductive composition Download PDFInfo
- Publication number
- JP2020158575A JP2020158575A JP2019057169A JP2019057169A JP2020158575A JP 2020158575 A JP2020158575 A JP 2020158575A JP 2019057169 A JP2019057169 A JP 2019057169A JP 2019057169 A JP2019057169 A JP 2019057169A JP 2020158575 A JP2020158575 A JP 2020158575A
- Authority
- JP
- Japan
- Prior art keywords
- group
- resist layer
- conductive
- additive
- conductive polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000203 mixture Substances 0.000 title claims abstract description 63
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 72
- 239000000654 additive Substances 0.000 claims abstract description 57
- 230000000996 additive effect Effects 0.000 claims abstract description 53
- 150000007514 bases Chemical class 0.000 claims abstract description 38
- 239000002904 solvent Substances 0.000 claims abstract description 34
- 238000002844 melting Methods 0.000 claims abstract description 27
- 230000008018 melting Effects 0.000 claims abstract description 27
- 230000002378 acidificating effect Effects 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 12
- 230000003068 static effect Effects 0.000 claims abstract description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- -1 phenylene vinylene, vinylene Chemical group 0.000 description 37
- 239000000178 monomer Substances 0.000 description 30
- 238000006116 polymerization reaction Methods 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 29
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- 125000004432 carbon atom Chemical group C* 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 239000000243 solution Substances 0.000 description 17
- 239000004094 surface-active agent Substances 0.000 description 17
- 125000001165 hydrophobic group Chemical group 0.000 description 14
- ZMCHBSMFKQYNKA-UHFFFAOYSA-N 2-aminobenzenesulfonic acid Chemical class NC1=CC=CC=C1S(O)(=O)=O ZMCHBSMFKQYNKA-UHFFFAOYSA-N 0.000 description 13
- 125000000217 alkyl group Chemical group 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000003960 organic solvent Substances 0.000 description 12
- 125000000542 sulfonic acid group Chemical group 0.000 description 12
- 239000007795 chemical reaction product Substances 0.000 description 11
- 125000000524 functional group Chemical group 0.000 description 11
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 11
- 239000007800 oxidant agent Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 125000003545 alkoxy group Chemical group 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 150000003839 salts Chemical class 0.000 description 10
- 229920002554 vinyl polymer Polymers 0.000 description 10
- 125000003118 aryl group Chemical group 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 150000003863 ammonium salts Chemical class 0.000 description 8
- 238000011161 development Methods 0.000 description 8
- 230000018109 developmental process Effects 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 150000001448 anilines Chemical class 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 7
- 229920003169 water-soluble polymer Polymers 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical class OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 229960003237 betaine Drugs 0.000 description 5
- 125000002843 carboxylic acid group Chemical group 0.000 description 5
- 235000014113 dietary fatty acids Nutrition 0.000 description 5
- 239000000194 fatty acid Substances 0.000 description 5
- 229930195729 fatty acid Natural products 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical group OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 4
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 125000004414 alkyl thio group Chemical group 0.000 description 4
- 125000003710 aryl alkyl group Chemical group 0.000 description 4
- 125000004659 aryl alkyl thio group Chemical group 0.000 description 4
- 125000005110 aryl thio group Chemical group 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000012046 mixed solvent Substances 0.000 description 4
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 4
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 4
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 3
- FKNQCJSGGFJEIZ-UHFFFAOYSA-N 4-methylpyridine Chemical compound CC1=CC=NC=C1 FKNQCJSGGFJEIZ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 3
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 229920002472 Starch Polymers 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000012986 chain transfer agent Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000002736 nonionic surfactant Substances 0.000 description 3
- 230000000379 polymerizing effect Effects 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 125000006239 protecting group Chemical group 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229940083542 sodium Drugs 0.000 description 3
- 239000008107 starch Substances 0.000 description 3
- 235000019698 starch Nutrition 0.000 description 3
- JWYVGKFDLWWQJX-UHFFFAOYSA-N 1-ethenylazepan-2-one Chemical compound C=CN1CCCCCC1=O JWYVGKFDLWWQJX-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 description 2
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- DXVYLFHTJZWTRF-UHFFFAOYSA-N Ethyl isobutyl ketone Chemical compound CCC(=O)CC(C)C DXVYLFHTJZWTRF-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000012935 ammoniumperoxodisulfate Substances 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 229920006026 co-polymeric resin Polymers 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 150000007529 inorganic bases Chemical class 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 2
- XHFGWHUWQXTGAT-UHFFFAOYSA-N n-methylpropan-2-amine Chemical compound CNC(C)C XHFGWHUWQXTGAT-UHFFFAOYSA-N 0.000 description 2
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 229920002401 polyacrylamide Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 229940006186 sodium polystyrene sulfonate Drugs 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 2
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- 125000005556 thienylene group Chemical group 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- DTCCVIYSGXONHU-CJHDCQNGSA-N (z)-2-(2-phenylethenyl)but-2-enedioic acid Chemical compound OC(=O)\C=C(C(O)=O)\C=CC1=CC=CC=C1 DTCCVIYSGXONHU-CJHDCQNGSA-N 0.000 description 1
- OQZAQBGJENJMHT-UHFFFAOYSA-N 1,3-dibromo-5-methoxybenzene Chemical compound COC1=CC(Br)=CC(Br)=C1 OQZAQBGJENJMHT-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- POKOASTYJWUQJG-UHFFFAOYSA-M 1-butylpyridin-1-ium;chloride Chemical compound [Cl-].CCCC[N+]1=CC=CC=C1 POKOASTYJWUQJG-UHFFFAOYSA-M 0.000 description 1
- YAYNEUUHHLGGAH-UHFFFAOYSA-N 1-chlorododecane Chemical compound CCCCCCCCCCCCCl YAYNEUUHHLGGAH-UHFFFAOYSA-N 0.000 description 1
- GKQHIYSTBXDYNQ-UHFFFAOYSA-M 1-dodecylpyridin-1-ium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+]1=CC=CC=C1 GKQHIYSTBXDYNQ-UHFFFAOYSA-M 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- FEWDXGMBVQULLN-UHFFFAOYSA-N 1-hydroxy-2-phenyl-1,5,6,7-tetrahydro-4H-benzimidazol-4-one Chemical compound ON1C=2CCCC(=O)C=2N=C1C1=CC=CC=C1 FEWDXGMBVQULLN-UHFFFAOYSA-N 0.000 description 1
- VBICKXHEKHSIBG-UHFFFAOYSA-N 1-monostearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 2,3-dimethylbutane Chemical group CC(C)C(C)C ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- IEORSVTYLWZQJQ-UHFFFAOYSA-N 2-(2-nonylphenoxy)ethanol Chemical compound CCCCCCCCCC1=CC=CC=C1OCCO IEORSVTYLWZQJQ-UHFFFAOYSA-N 0.000 description 1
- KPAGFBPFIYJIBU-UHFFFAOYSA-N 2-(butan-2-ylamino)benzenesulfonic acid Chemical compound CCC(C)NC1=CC=CC=C1S(O)(=O)=O KPAGFBPFIYJIBU-UHFFFAOYSA-N 0.000 description 1
- VDGOTDWOPDJQCU-UHFFFAOYSA-N 2-(butylamino)benzenesulfonic acid Chemical compound CCCCNC1=CC=CC=C1S(O)(=O)=O VDGOTDWOPDJQCU-UHFFFAOYSA-N 0.000 description 1
- LJBURJUESHIYPH-UHFFFAOYSA-N 2-(chloroamino)benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1NCl LJBURJUESHIYPH-UHFFFAOYSA-N 0.000 description 1
- BKUWWVKLLKXDJK-UHFFFAOYSA-N 2-(dimethylamino)icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCC(N(C)C)C(O)=O BKUWWVKLLKXDJK-UHFFFAOYSA-N 0.000 description 1
- XPALGXXLALUMLE-UHFFFAOYSA-N 2-(dimethylamino)tetradecanoic acid Chemical compound CCCCCCCCCCCCC(N(C)C)C(O)=O XPALGXXLALUMLE-UHFFFAOYSA-N 0.000 description 1
- BWKYRIBRDJQQNH-UHFFFAOYSA-N 2-(ethoxyamino)benzenesulfonic acid Chemical compound CCONC1=CC=CC=C1S(O)(=O)=O BWKYRIBRDJQQNH-UHFFFAOYSA-N 0.000 description 1
- BEMMBDFURBTMMI-UHFFFAOYSA-N 2-(ethylamino)benzenesulfonic acid Chemical compound CCNC1=CC=CC=C1S(O)(=O)=O BEMMBDFURBTMMI-UHFFFAOYSA-N 0.000 description 1
- BKQKKHCXSWIBGA-UHFFFAOYSA-N 2-(methoxyamino)benzenesulfonic acid Chemical compound CONC1=CC=CC=C1S(O)(=O)=O BKQKKHCXSWIBGA-UHFFFAOYSA-N 0.000 description 1
- IRQNCGVRPASCIP-UHFFFAOYSA-N 2-(propan-2-ylamino)benzenesulfonic acid Chemical compound CC(C)NC1=CC=CC=C1S(O)(=O)=O IRQNCGVRPASCIP-UHFFFAOYSA-N 0.000 description 1
- JUQHUCRLNZUUMH-UHFFFAOYSA-N 2-(propoxyamino)benzenesulfonic acid Chemical compound CCCONC1=CC=CC=C1S(O)(=O)=O JUQHUCRLNZUUMH-UHFFFAOYSA-N 0.000 description 1
- HZUOOVPRVYREFU-UHFFFAOYSA-N 2-(propylamino)benzenesulfonic acid Chemical compound CCCNC1=CC=CC=C1S(O)(=O)=O HZUOOVPRVYREFU-UHFFFAOYSA-N 0.000 description 1
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- GSOZJNOMOUGFPA-UHFFFAOYSA-N n-ethenyl-n-methylprop-2-enamide Chemical compound C=CN(C)C(=O)C=C GSOZJNOMOUGFPA-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
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- XCVNDBIXFPGMIW-UHFFFAOYSA-N n-ethylpropan-1-amine Chemical compound CCCNCC XCVNDBIXFPGMIW-UHFFFAOYSA-N 0.000 description 1
- RIVIDPPYRINTTH-UHFFFAOYSA-N n-ethylpropan-2-amine Chemical compound CCNC(C)C RIVIDPPYRINTTH-UHFFFAOYSA-N 0.000 description 1
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 1
- QNILTEGFHQSKFF-UHFFFAOYSA-N n-propan-2-ylprop-2-enamide Chemical compound CC(C)NC(=O)C=C QNILTEGFHQSKFF-UHFFFAOYSA-N 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- YYELLDKEOUKVIQ-UHFFFAOYSA-N octaethyleneglycol monododecyl ether Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCO YYELLDKEOUKVIQ-UHFFFAOYSA-N 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- HEGSGKPQLMEBJL-RKQHYHRCSA-N octyl beta-D-glucopyranoside Chemical compound CCCCCCCCO[C@@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O HEGSGKPQLMEBJL-RKQHYHRCSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229940055577 oleyl alcohol Drugs 0.000 description 1
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 description 1
- NPKKRSHVJIQBKU-UHFFFAOYSA-N ornogenin Natural products CC(OC(=O)C=Cc1ccccc1)C2(O)CCC3(O)C4(O)CC=C5CC(O)CCC5(C)C4CC(OC(=O)C=Cc6ccccc6)C23C NPKKRSHVJIQBKU-UHFFFAOYSA-N 0.000 description 1
- 239000001254 oxidized starch Substances 0.000 description 1
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- 125000006353 oxyethylene group Chemical group 0.000 description 1
- UZUFPBIDKMEQEQ-UHFFFAOYSA-N perfluorononanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F UZUFPBIDKMEQEQ-UHFFFAOYSA-N 0.000 description 1
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- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
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- 239000000049 pigment Substances 0.000 description 1
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- 239000004645 polyester resin Substances 0.000 description 1
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- 229920000123 polythiophene Polymers 0.000 description 1
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- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 229940099874 potassium lauroyl glutamate Drugs 0.000 description 1
- 229940033623 potassium lauryl phosphate Drugs 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
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- WGYKZJWCGVVSQN-UHFFFAOYSA-O propan-1-aminium Chemical compound CCC[NH3+] WGYKZJWCGVVSQN-UHFFFAOYSA-O 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- BHRZNVHARXXAHW-UHFFFAOYSA-N sec-butylamine Chemical compound CCC(C)N BHRZNVHARXXAHW-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 229940079781 sodium cocoyl glutamate Drugs 0.000 description 1
- BTURAGWYSMTVOW-UHFFFAOYSA-M sodium dodecanoate Chemical compound [Na+].CCCCCCCCCCCC([O-])=O BTURAGWYSMTVOW-UHFFFAOYSA-M 0.000 description 1
- 229940082004 sodium laurate Drugs 0.000 description 1
- 229940057950 sodium laureth sulfate Drugs 0.000 description 1
- 229940045944 sodium lauroyl glutamate Drugs 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 229940045845 sodium myristate Drugs 0.000 description 1
- 229950005425 sodium myristyl sulfate Drugs 0.000 description 1
- RYYKJJJTJZKILX-UHFFFAOYSA-M sodium octadecanoate Chemical compound [Na+].CCCCCCCCCCCCCCCCCC([O-])=O RYYKJJJTJZKILX-UHFFFAOYSA-M 0.000 description 1
- BYKRNSHANADUFY-UHFFFAOYSA-M sodium octanoate Chemical compound [Na+].CCCCCCCC([O-])=O BYKRNSHANADUFY-UHFFFAOYSA-M 0.000 description 1
- 229940045870 sodium palmitate Drugs 0.000 description 1
- 229940080350 sodium stearate Drugs 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- IWIUXJGIDSGWDN-UQKRIMTDSA-M sodium;(2s)-2-(dodecanoylamino)pentanedioate;hydron Chemical compound [Na+].CCCCCCCCCCCC(=O)N[C@H](C([O-])=O)CCC(O)=O IWIUXJGIDSGWDN-UQKRIMTDSA-M 0.000 description 1
- SXHLENDCVBIJFO-UHFFFAOYSA-M sodium;2-[2-(2-dodecoxyethoxy)ethoxy]ethyl sulfate Chemical compound [Na+].CCCCCCCCCCCCOCCOCCOCCOS([O-])(=O)=O SXHLENDCVBIJFO-UHFFFAOYSA-M 0.000 description 1
- FIWQZURFGYXCEO-UHFFFAOYSA-M sodium;decanoate Chemical compound [Na+].CCCCCCCCCC([O-])=O FIWQZURFGYXCEO-UHFFFAOYSA-M 0.000 description 1
- GGXKEBACDBNFAF-UHFFFAOYSA-M sodium;hexadecanoate Chemical compound [Na+].CCCCCCCCCCCCCCCC([O-])=O GGXKEBACDBNFAF-UHFFFAOYSA-M 0.000 description 1
- JUQGWKYSEXPRGL-UHFFFAOYSA-M sodium;tetradecanoate Chemical compound [Na+].CCCCCCCCCCCCCC([O-])=O JUQGWKYSEXPRGL-UHFFFAOYSA-M 0.000 description 1
- UPUIQOIQVMNQAP-UHFFFAOYSA-M sodium;tetradecyl sulfate Chemical compound [Na+].CCCCCCCCCCCCCCOS([O-])(=O)=O UPUIQOIQVMNQAP-UHFFFAOYSA-M 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 229950006451 sorbitan laurate Drugs 0.000 description 1
- 235000011067 sorbitan monolaureate Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229940012831 stearyl alcohol Drugs 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- OZAPNNUDYHYFTO-UHFFFAOYSA-N tetrakis(hydroxymethyl)azanium Chemical compound OC[N+](CO)(CO)CO OZAPNNUDYHYFTO-UHFFFAOYSA-N 0.000 description 1
- JVOPCCBEQRRLOJ-UHFFFAOYSA-M tetrapentylazanium;hydroxide Chemical compound [OH-].CCCCC[N+](CCCCC)(CCCCC)CCCCC JVOPCCBEQRRLOJ-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
- AQZSPJRLCJSOED-UHFFFAOYSA-M trimethyl(octyl)azanium;chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(C)C AQZSPJRLCJSOED-UHFFFAOYSA-M 0.000 description 1
- CEYYIKYYFSTQRU-UHFFFAOYSA-M trimethyl(tetradecyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)C CEYYIKYYFSTQRU-UHFFFAOYSA-M 0.000 description 1
- SZYJELPVAFJOGJ-UHFFFAOYSA-N trimethylamine hydrochloride Chemical compound Cl.CN(C)C SZYJELPVAFJOGJ-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000004846 water-soluble epoxy resin Substances 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Conductive Materials (AREA)
Abstract
Description
本発明は、導電性組成物に関する。 The present invention relates to conductive compositions.
電子線やイオン線等の荷電粒子線を用いたパターン形成技術は、光リソグラフィーの次世代技術として期待されている。荷電粒子線を用いる場合、生産性向上にはレジスト層の感度向上が重要である。
従って、露光部分又は荷電粒子線が照射された部分に酸を発生させ、続いてポストエクスポージャーベーク(PEB)処理と呼ばれる加熱処理により架橋反応又は分解反応を促進させる、高感度な化学増幅型レジストの使用が主流となっている。
また、近年、半導体デバイスの微細化の流れに伴い、数nmオーダーでのレジスト形状の管理も要求されるようになってきている。
Pattern formation technology using charged particle beams such as electron beams and ion beams is expected as a next-generation technology for optical lithography. When a charged particle beam is used, it is important to improve the sensitivity of the resist layer in order to improve productivity.
Therefore, a highly sensitive chemically amplified resist that generates acid in the exposed part or the part irradiated with charged particle beams and then promotes the cross-linking reaction or decomposition reaction by heat treatment called post-exposure baking (PEB) treatment. Use is the mainstream.
Further, in recent years, with the trend of miniaturization of semiconductor devices, management of resist shapes on the order of several nm has been required.
ところで、荷電粒子線を用いるパターン形成方法においては、特に基板が絶縁性の場合、基板の帯電(チャージアップ)によって発生する電界が原因で、荷電粒子線の軌道が曲げられ、所望のパターンが得られにくいという課題がある。
この課題を解決する手段として、導電性ポリマーを含む導電性組成物をレジスト層の表面に塗布して導電膜を形成し、前記導電膜でレジスト層の表面を被覆する技術が有効であることが既に知られている。
例えば、特許文献1には、ポリチオフェン系の水溶性導電性ポリマーを含む導電性組成物の塗布性を向上させるために、グリコールエーテル等の添加剤を配合した導電性組成物が開示されている。
By the way, in the pattern forming method using a charged particle beam, especially when the substrate is insulating, the trajectory of the charged particle beam is bent due to the electric field generated by the charge-up of the substrate, and a desired pattern is obtained. There is a problem that it is difficult to be charged.
As a means for solving this problem, it is effective to apply a conductive composition containing a conductive polymer to the surface of the resist layer to form a conductive film, and to coat the surface of the resist layer with the conductive film. Already known.
For example, Patent Document 1 discloses a conductive composition containing an additive such as glycol ether in order to improve the coatability of the conductive composition containing a polythiophene-based water-soluble conductive polymer.
しかしながら、特許文献1に記載の導電性組成物を化学増幅型レジストに適用すると、レジスト層上に導電膜を形成したまま露光、PEB処理及び現像を行う際に、添加剤由来成分がレジスト層へ移行しやく、レジスト層への影響がある。
本発明は、添加剤由来成分がレジスト層へ移行しにくい導電膜を形成できる導電性組成物を提供することを目的とする。
However, when the conductive composition described in Patent Document 1 is applied to a chemically amplified resist, an additive-derived component is transferred to the resist layer when exposure, PEB treatment and development are performed with the conductive film formed on the resist layer. It is easy to migrate and has an effect on the resist layer.
An object of the present invention is to provide a conductive composition capable of forming a conductive film in which an additive-derived component does not easily migrate to a resist layer.
本発明者は鋭意研究を行なった結果、界面活性剤等の添加剤を含む導電性組成物をレジスト層上に塗布し、加熱処理(プリベーク処理)して導電膜を形成する際や、この導電膜をレジスト層上に形成したままPEB処理する際に添加剤が溶融し、その結果、溶融した添加剤がレジスト層へ移行することを突き止めた。溶融した添加剤がレジスト層へ移行すると、現像時に未露光部のレジスト層が溶解してしまい、レジスト層の膜減りなどが起こる。そこで、導電性組成物に含まれる添加剤の融点を規定することで、添加剤が溶融しても添加剤由来成分がレジスト層へ移行しにくい導電膜を形成できることを見出し、本発明を完成するに至った。 As a result of diligent research, the present inventor applied a conductive composition containing an additive such as a surfactant on a resist layer and heat-treated (prebaked) to form a conductive film, or when this conductivity was formed. It was found that the additive melted during the PEB treatment with the film formed on the resist layer, and as a result, the melted additive migrated to the resist layer. When the melted additive is transferred to the resist layer, the resist layer in the unexposed portion is dissolved during development, and the resist layer is thinned. Therefore, by defining the melting point of the additive contained in the conductive composition, it is found that a conductive film in which the additive-derived component does not easily migrate to the resist layer can be formed even if the additive melts, and the present invention is completed. It came to.
すなわち、本発明は以下の態様を有する。
[1] 酸性基を有する導電性ポリマーと、溶剤と、塩基性化合物以外の添加剤とを含む導電性組成物であって、
前記添加剤の融点が60℃以上である、導電性組成物。
[2] 荷電粒子線描画時の帯電防止用である、[1]の導電性組成物。
That is, the present invention has the following aspects.
[1] A conductive composition containing a conductive polymer having an acidic group, a solvent, and an additive other than a basic compound.
A conductive composition having a melting point of 60 ° C. or higher for the additive.
[2] The conductive composition of [1], which is used for preventing static electricity when drawing a charged particle beam.
本発明によれば、添加剤由来成分がレジスト層へ移行しにくい導電膜を形成できる導電性組成物を提供できる。 According to the present invention, it is possible to provide a conductive composition capable of forming a conductive film in which additive-derived components are less likely to migrate to the resist layer.
以下、本発明を詳細に説明する。以下の実施の形態は、本発明を説明するための単なる例示であって、本発明をこの実施の形態にのみ限定することは意図されない。本発明は、その趣旨を逸脱しない限り、様々な態様で実施することが可能である。 Hereinafter, the present invention will be described in detail. The following embodiments are merely exemplary to illustrate the invention and are not intended to limit the invention to this embodiment alone. The present invention can be implemented in various aspects as long as it does not deviate from the gist thereof.
なお、本発明において「導電性」とは、1×1011Ω/□以下の表面抵抗値を有することである。表面抵抗値は、一定の電流を流した場合の電極間の電位差より求められる。
また、本明細書において「溶解性」とは、単なる水、塩基及び塩基性塩の少なくとも一方を含む水、酸を含む水、水と水溶性有機溶媒との混合物のうち、10g(液温25℃)に、0.1g以上均一に溶解することを意味する。また、「水溶性」とは、上記溶解性に関して、水に対する溶解性のことを意味する。
また、本明細書において、「末端疎水性基」の「末端」とは、ポリマーを構成する繰り返し単位以外の部位を意味する。
また、本明細書において「質量平均分子量」とは、ゲルパーミエーションクロマトグラフィ(GPC)によって測定される質量平均分子量(ポリスチレンスルホン酸ナトリウム換算又はポリエチレングリコール換算)である。
In the present invention, "conductive" means having a surface resistance value of 1 × 10 11 Ω / □ or less. The surface resistance value is obtained from the potential difference between the electrodes when a constant current is applied.
Further, in the present specification, "soluble" means simply water, water containing at least one of a base and a basic salt, water containing an acid, and 10 g of a mixture of water and a water-soluble organic solvent (liquid temperature 25). It means that 0.1 g or more is uniformly dissolved in (° C.). Further, "water-soluble" means the solubility in water with respect to the above-mentioned solubility.
Further, in the present specification, the "terminal" of the "terminal hydrophobic group" means a site other than the repeating unit constituting the polymer.
Further, in the present specification, the "mass average molecular weight" is a mass average molecular weight (in terms of sodium polystyrene sulfonate or polyethylene glycol) measured by gel permeation chromatography (GPC).
[導電性組成物]
本発明の導電性組成物は、以下に示す導電性ポリマー(A)と、溶剤(B)と、塩基性化合物(D)以外の添加剤(C)とを含む。導電性組成物は、塩基性化合物(D)をさらに含んでいてもよい。
[Conductive composition]
The conductive composition of the present invention contains the following conductive polymer (A), solvent (B), and additive (C) other than the basic compound (D). The conductive composition may further contain the basic compound (D).
<導電性ポリマー>
本発明の導電性ポリマー(A)は、酸性基を有する。導電性ポリマー(A)が酸性基を有していれば、水溶性が高まる。その結果、導電性ポリマー(A)を含む導電性組成物の塗布性が高まり、均一な厚さの塗膜が得られやすくなる。
導電性ポリマー(A)としては、分子内にスルホン酸基、及びカルボキシ基からなる群より選択される少なくとも1つの基を有していれば、本発明の効果を有する限り特に限定されず、公知の導電性ポリマーを用いることができる。例えば、特開昭61−197633号公報、特開昭63−39916号公報、特開平1−301714号公報、特開平5−504153号公報、特開平5−503953号公報、特開平4−32848号公報、特開平4−328181号公報、特開平6−145386号公報、特開平6−56987号公報、特開平5−226238号公報、特開平5−178989号公報、特開平6−293828号公報、特開平7−118524号公報、特開平6−32845号公報、特開平6−87949号公報、特開平6−256516号公報、特開平7−41756号公報、特開平7−48436号公報、特開平4−268331号公報、特開2014−65898号公報等に示された導電性ポリマーなどが、溶解性の観点から好ましい。
<Conductive polymer>
The conductive polymer (A) of the present invention has an acidic group. If the conductive polymer (A) has an acidic group, the water solubility is enhanced. As a result, the coatability of the conductive composition containing the conductive polymer (A) is enhanced, and it becomes easy to obtain a coating film having a uniform thickness.
The conductive polymer (A) is not particularly limited as long as it has at least one group selected from the group consisting of a sulfonic acid group and a carboxy group in the molecule, and is known without particular limitation as long as it has the effect of the present invention. Conductive polymer can be used. For example, Japanese Patent Application Laid-Open No. 61-197633, Japanese Patent Application Laid-Open No. 63-39916, Japanese Patent Application Laid-Open No. 1-301714, Japanese Patent Application Laid-Open No. 5-504153, Japanese Patent Application Laid-Open No. 5-503953, Japanese Patent Application Laid-Open No. 4-32848 Japanese Patent Application Laid-Open No. 4-328181, Japanese Patent Application Laid-Open No. 6-1453886, Japanese Patent Application Laid-Open No. 6-56987, Japanese Patent Application Laid-Open No. 5-226238, Japanese Patent Application Laid-Open No. 5-1788989, Japanese Patent Application Laid-Open No. 6-293828, Japanese Patent Application Laid-Open No. 7-118524, Japanese Patent Application Laid-Open No. 6-32845, Japanese Patent Application Laid-Open No. 6-87949, Japanese Patent Application Laid-Open No. 6-256516, Japanese Patent Application Laid-Open No. 7-41756, Japanese Patent Application Laid-Open No. 7-48436, Japanese Patent Application Laid-Open No. The conductive polymers shown in Japanese Patent Application Laid-Open No. 4-268331, Japanese Patent Application Laid-Open No. 2014-65598 and the like are preferable from the viewpoint of solubility.
導電性ポリマー(A)としては、具体的には、α位若しくはβ位が、スルホン酸基、及びカルボキシ基からなる群より選択される少なくとも1つの基で置換されたフェニレンビニレン、ビニレン、チエニレン、ピロリレン、フェニレン、イミノフェニレン、イソチアナフテン、フリレン、及びカルバゾリレンからなる群から選ばれた少なくとも1種を繰り返し単位として含む、π共役系導電性ポリマーが挙げられる。
また、前記π共役系導電性ポリマーがイミノフェニレン、及びガルバゾリレンからなる群から選ばれた少なくとも1種の繰り返し単位を含む場合は、前記繰り返し単位の窒素原子上に、スルホン酸基、及びカルボキシ基からなる群より選択される少なくとも1つの基を有する、又はスルホン酸基、及びカルボキシ基からなる群より選択される少なくとも1つの基で置換されたアルキル基、若しくはエーテル結合を含むアルキル基を前記窒素原子上に有する導電性ポリマーが挙げられる。
この中でも、導電性や溶解性の観点から、β位がスルホン酸基、及びカルボキシ基からなる群より選択される少なくとも1つの基で置換されたチエニレン、ピロリレン、イミノフェニレン、フェニレンビニレン、カルバゾリレン、及びイソチアナフテンからなる群から選ばれた少なくとも1種をモノマーユニット(単位)として有する導電性ポリマーが好ましく用いられる。
Specific examples of the conductive polymer (A) include phenylene vinylene, vinylene, and thienylene in which the α-position or β-position is substituted with at least one group selected from the group consisting of a sulfonic acid group and a carboxy group. Examples thereof include π-conjugated conductive polymers containing at least one selected from the group consisting of pyrrolylene, phenylene, iminophenylene, isothianaften, furylene, and carbazolylen as a repeating unit.
When the π-conjugated conductive polymer contains at least one repeating unit selected from the group consisting of iminophenylene and galvazolylene, the sulfonic acid group and the carboxy group are added to the nitrogen atom of the repeating unit. The nitrogen atom comprises an alkyl group having at least one group selected from the group consisting of, or an alkyl group substituted with at least one group selected from the group consisting of a sulfonic acid group and a carboxy group, or an alkyl group containing an ether bond. Examples include the conductive polymer having above.
Among these, from the viewpoint of conductivity and solubility, thienylene, pyrrolylene, iminophenylene, phenylene vinylene, carbazolylen, and those in which the β-position is substituted with at least one group selected from the group consisting of a sulfonic acid group and a carboxy group, and A conductive polymer having at least one selected from the group consisting of isothianaften as a monomer unit (unit) is preferably used.
導電性ポリマー(A)は、高い導電性や溶解性を発現できる観点から、下記一般式(1)〜(4)で表される単位からなる群より選ばれた1種以上のモノマーユニットを、導電性ポリマーを構成する全単位(100mol%)中に20〜100mol%含有する導電性ポリマーが好ましい。 The conductive polymer (A) is composed of one or more monomer units selected from the group consisting of units represented by the following general formulas (1) to (4) from the viewpoint of exhibiting high conductivity and solubility. A conductive polymer containing 20 to 100 mol% in all units (100 mol%) constituting the conductive polymer is preferable.
式(1)〜(4)中、Xは硫黄原子、又は窒素原子を表し、R1〜R15は各々独立に、水素原子、炭素数1〜24の直鎖若しくは分岐鎖のアルキル基、炭素数1〜24の直鎖若しくは分岐鎖のアルコキシ基、酸性基、ヒドロキシ基、ニトロ基、ハロゲン原子(−F、−Cl、−Br又はI)、−N(R16)2、−NHCOR16、−SR16、−OCOR16、−COOR16、−COR16、−CHO、又は−CNを表す。R16は炭素数1〜24のアルキル基、炭素数1〜24のアリール基、又は炭素数1〜24のアラルキル基を表す。
ただし、一般式(1)のR1、R2のうちの少なくとも1つ、一般式(2)のR3〜R6のうちの少なくとも1つ、一般式(3)のR7〜R10のうちの少なくとも1つ、一般式(4)のR11〜R15のうちの少なくとも1つは、それぞれ酸性基又はその塩である。
In formulas (1) to (4), X represents a sulfur atom or a nitrogen atom, and R 1 to R 15 are independently hydrogen atoms, linear or branched alkyl groups having 1 to 24 carbon atoms, and carbons. Alkoxy group, acidic group, hydroxy group, nitro group, halogen atom (-F, -Cl, -Br or I), -N (R 16 ) 2 , -NHCOR 16 , of the number 1 to 24 linear or branched chain. Represents -SR 16 , -OCOR 16 , -COOR 16 , -COR 16 , -CHO, or -CN. R 16 represents an alkyl group having 1 to 24 carbon atoms, an aryl group having 1 to 24 carbon atoms, or an aralkyl group having 1 to 24 carbon atoms.
However, at least one of R 1 and R 2 of the general formula (1), at least one of R 3 to R 6 of the general formula (2), and R 7 to R 10 of the general formula (3). At least one of them, at least one of R 11 to R 15 of the general formula (4), is an acidic group or a salt thereof, respectively.
ここで、「酸性基」とは、スルホン酸基(スルホ基)又はカルボン酸基(カルボキシ基)を意味する。
スルホン酸基は、酸の状態(−SO3H)で含まれていてもよく、イオンの状態(−SO3 −)で含まれていてもよい。さらに、スルホン酸基には、スルホン酸基を有する置換基(−R17SO3H)も含まれる。
一方、カルボン酸基は、酸の状態(−COOH)で含まれていてもよく、イオンの状態(−COO−)で含まれていてもよい。さらに、カルボン酸基には、カルボン酸基を有する置換基(−R17COOH)も含まれる。
前記R17は炭素数1〜24の直鎖若しくは分岐鎖のアルキレン基、炭素数1〜24の直鎖若しくは分岐鎖のアリーレン基、又は炭素数1〜24の直鎖若しくは分岐鎖のアラルキレン基を表す。
Here, the "acidic group" means a sulfonic acid group (sulfo group) or a carboxylic acid group (carboxy group).
The sulfonic acid group may be contained in the acid state (-SO 3 H) or in the ionic state (-SO 3 − ). Further, the sulfonic acid group also includes a substituent having a sulfonic acid group (-R 17 SO 3 H).
On the other hand, carboxylic acid groups, may be included in the form of an acid (-COOH), an ionic state - may be included in (-COO). Further, the carboxylic acid group also includes a substituent having a carboxylic acid group (-R 17 COOH).
The R 17 contains a linear or branched alkylene group having 1 to 24 carbon atoms, an arylene group having a linear or branched chain having 1 to 24 carbon atoms, or an aralkylene group having a linear or branched chain having 1 to 24 carbon atoms. Represent.
酸性基の塩としては、スルホン酸基又はカルボン酸基のアルカリ金属塩、アルカリ土類金属塩、アンモニウム塩、又は置換アンモニウム塩などが挙げられる。
アルカリ金属塩としては、例えば、硫酸リチウム、炭酸リチウム、水酸化リチウム、硫酸ナトリウム、炭酸ナトリウム、水酸化ナトリウム、硫酸カリウム、炭酸カリウム、水酸化カリウム及びこれらの骨格を有する誘導体などが挙げられる。
アルカリ土類金属塩としては、例えばマグネシウム塩、カルシウム塩などが挙げられる。
置換アンモニウム塩としては、例えば脂肪族アンモニウム塩、飽和脂環式アンモニウム塩、不飽和脂環式アンモニウム塩などが挙げられる。
脂肪族アンモニウム塩としては、例えば、メチルアンモニウム、ジメチルアンモニウム、トリメチルアンモニウム、エチルアンモニウム、ジエチルアンモニウム、トリエチルアンモニウム、メチルエチルアンモニウム、ジエチルメチルアンモニウム、ジメチルエチルアンモニウム、プロピルアンモニウム、ジプロピルアンモニウム、イソプロピルアンモニウム、ジイソプロピルアンモニウム、ブチルアンモニウム、ジブチルアンモニウム、メチルプロピルアンモニウム、エチルプロピルアンモニウム、メチルイソプロピルアンモニウム、エチルイソプロピルアンモニウム、メチルブチルアンモニウム、エチルブチルアンモニウム、テトラメチルアンモニウム、テトラメチロールアンモニウム、テトラエチルアンモニウム、テトラn−ブチルアンモニウム、テトラsec−ブチルアンモニウム、テトラt−ブチルアンモニウムなどが挙げられる。
飽和脂環式アンモニウム塩としては、例えば、ピペリジニウム、ピロリジニウム、モルホリニウム、ピペラジニウム及びこれらの骨格を有する誘導体などが挙げられる。
不飽和脂環式アンモニウム塩としては、例えば、ピリジニウム、α−ピコリニウム、β−ピコリニウム、γ−ピコリニウム、キノリニウム、イソキノリニウム、ピロリニウム、及びこれらの骨格を有する誘導体などが挙げられる。
Examples of the salt of the acidic group include an alkali metal salt of a sulfonic acid group or a carboxylic acid group, an alkaline earth metal salt, an ammonium salt, a substituted ammonium salt and the like.
Examples of the alkali metal salt include lithium sulfate, lithium carbonate, lithium hydroxide, sodium sulfate, sodium carbonate, sodium hydroxide, potassium sulfate, potassium carbonate, potassium hydroxide and derivatives having a skeleton thereof.
Examples of the alkaline earth metal salt include magnesium salt and calcium salt.
Examples of the substituted ammonium salt include an aliphatic ammonium salt, a saturated alicyclic ammonium salt, and an unsaturated alicyclic ammonium salt.
Examples of the aliphatic ammonium salt include methylammonium, dimethylammonium, trimethylammonium, ethylammonium, diethylammonium, triethylammonium, methylethylammonium, diethylmethylammonium, dimethylethylammonium, propylammonium, dipropylammonium, isopropylammonium, and diisopropyl. Ammonium, butylammonium, dibutylammonium, methylpropylammonium, ethylpropylammonium, methylisopropylammonium, ethylisopropylammonium, methylbutylammonium, ethylbutylammonium, tetramethylammonium, tetramethylolammonium, tetraethylammonium, tetran-butylammonium, tetra Examples thereof include sec-butylammonium and tetrat-butylammonium.
Examples of the saturated alicyclic ammonium salt include piperidinium, pyrrolidinium, morpholinium, piperadinium, and derivatives having a skeleton thereof.
Examples of the unsaturated alicyclic ammonium salt include pyridinium, α-picolinium, β-picolinium, γ-picolinium, quinolinium, isoquinolinium, pyrrolinium, and derivatives having a skeleton thereof.
導電性ポリマー(A)としては、高い導電性を発現できる観点から、上記一般式(4)で表される単位を有することが好ましく、その中でも特に、溶解性にも優れる観点から、下記一般式(5)で表されるモノマーユニットを有することがより好ましい。 The conductive polymer (A) preferably has a unit represented by the above general formula (4) from the viewpoint of exhibiting high conductivity, and among them, particularly from the viewpoint of excellent solubility, the following general formula It is more preferable to have the monomer unit represented by (5).
式(5)中、R18〜R21は、各々独立に、水素原子、炭素数1〜24の直鎖若しくは分岐鎖のアルキル基、炭素数1〜24の直鎖若しくは分岐鎖のアルコキシ基、酸性基、ヒドロキシ基、ニトロ基、又はハロゲン原子(−F、−Cl、−Br又はI)を表す。また、R18〜R21のうちの少なくとも1つは酸性基又はその塩である。 In formula (5), R 18 to R 21 are each independently a hydrogen atom, a linear or branched alkyl group having 1 to 24 carbon atoms, or a linear or branched alkoxy group having 1 to 24 carbon atoms. Represents an acidic group, a hydroxy group, a nitro group, or a halogen atom (-F, -Cl, -Br or I). Further, at least one of R 18 to R 21 is an acidic group or a salt thereof.
前記一般式(5)で表される単位としては、製造が容易な点で、R18〜R21のうち、いずれか1つが炭素数1〜4の直鎖又は分岐鎖のアルコキシ基であり、他のいずれか1つがスルホン酸基であり、残りが水素であるものが好ましい。 As the unit represented by the general formula (5), any one of R 18 to R 21 is a linear or branched alkoxy group having 1 to 4 carbon atoms because it is easy to manufacture. It is preferable that any one of the other is a sulfonic acid group and the rest is hydrogen.
導電性ポリマー(A)は、pHに関係なく水及び有機溶媒への溶解性に優れる観点から、該導電性ポリマー(A)を構成する全単位(100mol%)のうち、前記一般式(5)で表される単位を10〜100mol%含有することが好ましく、50〜100mol%含有することがより好ましく、100mol%含有することが特に好ましい。
また、導電性ポリマー(A)は、導電性に優れる観点で、前記一般式(5)で表される単位を1分子中に10以上含有することが好ましい。
The conductive polymer (A) has the above general formula (5) among all the units (100 mol%) constituting the conductive polymer (A) from the viewpoint of excellent solubility in water and organic solvents regardless of pH. The unit represented by (1) is preferably contained in an amount of 10 to 100 mol%, more preferably 50 to 100 mol%, and particularly preferably 100 mol%.
Further, from the viewpoint of excellent conductivity, the conductive polymer (A) preferably contains 10 or more units represented by the general formula (5) in one molecule.
また、導電性ポリマー(A)において、溶解性がより向上する観点から、ポリマー中の芳香環の総数に対する、酸性基が結合した芳香環の数は、50%以上であることが好ましく、70%以上がより好ましく、80%以上がさらに好ましく、90%以上が特に好ましく、100%が最も好ましい。
ポリマー中の芳香環の総数に対する、酸性基が結合した芳香環の数は、導電性ポリマー(A)製造時の、モノマーの仕込み比から算出した値のことを指す。
Further, in the conductive polymer (A), from the viewpoint of further improving the solubility, the number of aromatic rings to which acidic groups are bonded is preferably 50% or more, preferably 70%, based on the total number of aromatic rings in the polymer. The above is more preferable, 80% or more is further preferable, 90% or more is particularly preferable, and 100% is most preferable.
The number of aromatic rings to which an acidic group is bonded with respect to the total number of aromatic rings in the polymer refers to a value calculated from the charging ratio of the monomers at the time of producing the conductive polymer (A).
また、導電性ポリマー(A)において、モノマーユニットの芳香環上の酸性基以外の置換基は、モノマーへの反応性付与の観点から電子供与性基が好ましく、具体的には、炭素数1〜24のアルキル基、炭素数1〜24のアルコキシ基、ハロゲン基(−F、−Cl、−Br又はI)等が好ましく、このうち、電子供与性の観点から、炭素数1〜24のアルコキシ基であることが最も好ましい。 Further, in the conductive polymer (A), the substituent other than the acidic group on the aromatic ring of the monomer unit is preferably an electron-donating group from the viewpoint of imparting reactivity to the monomer, and specifically, has 1 to 1 carbon atoms. Twenty-four alkyl groups, alkoxy groups having 1 to 24 carbon atoms, halogen groups (-F, -Cl, -Br or I) and the like are preferable, and among these, an alkoxy group having 1 to 24 carbon atoms is preferable from the viewpoint of electron donating property. Is most preferable.
さらに、導電性ポリマー(A)は、前記一般式(5)で表される単位以外の構成単位として、溶解性、導電性及び性状に影響を及ぼさない限り、置換又は無置換のアニリン、チオフェン、ピロール、フェニレン、ビニレン、二価の不飽和基、二価の飽和基からなる群より選ばれる1種以上の単位を含んでいてもよい。 Further, the conductive polymer (A) is a constituent unit other than the unit represented by the general formula (5), and is a substituted or unsaturated aniline, thiophene, as long as it does not affect the solubility, conductivity and properties. It may contain one or more units selected from the group consisting of pyrroles, phenylenes, vinylenes, divalent unsaturated groups, and divalent saturated groups.
導電性ポリマー(A)としては、高い導電性と溶解性を発現できる観点から、下記一般式(6)で表される構造を有する化合物であることが好ましく、下記一般式(6)で表される構造を有する化合物の中でも、ポリ(2−スルホ−5−メトキシ−1,4−イミノフェニレン)が特に好ましい。 The conductive polymer (A) is preferably a compound having a structure represented by the following general formula (6) from the viewpoint of exhibiting high conductivity and solubility, and is represented by the following general formula (6). Among the compounds having such a structure, poly (2-sulfo-5-methoxy-1,4-iminophenylene) is particularly preferable.
式(6)中、R22〜R37は、各々独立に、水素原子、炭素数1〜4の直鎖若しくは分岐鎖のアルキル基、炭素数1〜4の直鎖若しくは分岐鎖のアルコキシ基、酸性基、ヒドロキシ基、ニトロ基、又はハロゲン原子(−F、−Cl、−Br又はI)を表す。また、R22〜R37のうち少なくとも1つは酸性基又はその塩である。また、nは重合度を示す。本発明においては、nは5〜2500の整数であることが好ましい。 In formula (6), R 22 to R 37 are each independently a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched alkoxy group having 1 to 4 carbon atoms. Represents an acidic group, a hydroxy group, a nitro group, or a halogen atom (-F, -Cl, -Br or I). Further, at least one of R 22 to R 37 is an acidic group or a salt thereof. Further, n indicates the degree of polymerization. In the present invention, n is preferably an integer of 5 to 2500.
導電性ポリマー(A)に含有される酸性基は、導電性向上の観点から少なくともその一部が遊離酸型であることが望ましい。 It is desirable that at least a part of the acidic group contained in the conductive polymer (A) is a free acid type from the viewpoint of improving conductivity.
導電性ポリマー(A)の質量平均分子量は、GPCのポリスチレンスルホン酸ナトリウム換算で、導電性、溶解性及び成膜性の観点から、1000〜100万が好ましく、1500〜80万がより好ましく、2000〜50万がさらに好ましく、2000〜10万が特に好ましい。導電性ポリマー(A)の質量平均分子量が1000未満の場合、溶解性には優れるものの、導電性及び成膜性が不足する場合がある。一方、質量平均分子量が100万を超える場合、導電性には優れるものの、溶解性が不充分な場合がある。
ここで、「成膜性」とは、ハジキ等が無い均一な膜となる性質のことを指し、ガラス上へのスピンコート等の方法で評価することができる。
The mass average molecular weight of the conductive polymer (A) is preferably 10 to 1,000,000, more preferably 1,500 to 800,000, and more preferably 2,000, in terms of sodium polystyrene sulfonate of GPC, from the viewpoint of conductivity, solubility and film forming property. ~ 500,000 is more preferable, and 20 to 100,000 is particularly preferable. When the mass average molecular weight of the conductive polymer (A) is less than 1000, the solubility is excellent, but the conductivity and the film-forming property may be insufficient. On the other hand, when the mass average molecular weight exceeds 1 million, the conductivity may be excellent, but the solubility may be insufficient.
Here, the "film-forming property" refers to the property of forming a uniform film without repellency and the like, and can be evaluated by a method such as spin coating on glass.
導電性ポリマー(A)は、例えば重合溶媒及び酸化剤の存在下、導電性ポリマー(A)の原料モノマーを重合することで得られる。
以下に、導電性ポリマー(A)の製造方法の一例について説明する。
The conductive polymer (A) can be obtained, for example, by polymerizing the raw material monomer of the conductive polymer (A) in the presence of a polymerization solvent and an oxidizing agent.
An example of a method for producing the conductive polymer (A) will be described below.
(導電性ポリマー(A)の製造方法)
本実施形態の導電性ポリマー(A)の製造方法は、重合溶媒及び酸化剤の存在下、導電性ポリマー(A)の原料モノマーを重合する工程(重合工程)を含む。また本実施形態の導電性ポリマー(A)の製造方法は、重合工程で得られた反応生成物を精製する工程(精製工程)を含んでいてもよい。
(Manufacturing method of conductive polymer (A))
The method for producing the conductive polymer (A) of the present embodiment includes a step (polymerization step) of polymerizing the raw material monomer of the conductive polymer (A) in the presence of a polymerization solvent and an oxidizing agent. Further, the method for producing the conductive polymer (A) of the present embodiment may include a step (purification step) of purifying the reaction product obtained in the polymerization step.
<<重合工程>>
重合工程は、重合溶媒及び酸化剤の存在下、導電性ポリマー(A)の原料モノマーを重合する工程である。
原料モノマーの具体例としては、上述したモノマーユニットの由来となる重合性単量体が挙げられ、具体的には酸性基置換アニリン、そのアルカリ金属塩、アルカリ土類金属塩、アンモニウム塩及び置換アンモニウム塩からなる群より選ばれる少なくとも1種が挙げられる。
酸性基置換アニリンとしては、例えば酸性基としてスルホン酸基を有するスルホン酸基置換アニリンが挙げられる。
スルホン基置換アニリンとして代表的なものは、アミノベンゼンスルホン酸類であり、具体的にはo−,m−,p−アミノベンゼンスルホン酸、アニリン−2,6−ジスルホン酸、アニリン−2,5−ジスルホン酸、アニリン−3,5−ジスルホン酸、アニリン−2,4−ジスルホン酸、アニリン−3,4−ジスルホン酸などが好ましく用いられる。
<< Polymerization process >>
The polymerization step is a step of polymerizing the raw material monomer of the conductive polymer (A) in the presence of a polymerization solvent and an oxidizing agent.
Specific examples of the raw material monomer include the polymerizable monomer from which the above-mentioned monomer unit is derived, and specifically, an acidic group-substituted aniline, an alkali metal salt thereof, an alkaline earth metal salt, an ammonium salt and a substituted ammonium salt. At least one selected from the group consisting of salts can be mentioned.
Examples of the acidic group-substituted aniline include a sulfonic acid group-substituted aniline having a sulfonic acid group as an acidic group.
Typical sulfonic acid-substituted anilines are aminobenzene sulfonic acids, specifically o-, m-, p-aminobenzene sulfonic acid, aniline-2,6-disulfonic acid, aniline-2,5-. Disulfonic acid, aniline-3,5-disulfonic acid, aniline-2,4-disulfonic acid, aniline-3,4-disulfonic acid and the like are preferably used.
アミノベンゼンスルホン酸類以外のスルホン基置換アニリンとしては、例えばメチルアミノベンゼンスルホン酸、エチルアミノベンゼンスルホン酸、n−プロピルアミノベンゼンスルホン酸、iso−プロピルアミノベンゼンスルホン酸、n−ブチルアミノベンゼンスルホン酸、sec−ブチルアミノベンゼンスルホン酸、t−ブチルアミノベンゼンスルホン酸等のアルキル基置換アミノベンゼンスルホン酸類;メトキシアミノベンゼンスルホン酸、エトキシアミノベンゼンスルホン酸、プロポキシアミノベンゼンスルホン酸等のアルコキシ基置換アミノベンゼンスルホン酸類;ヒドロキシ基置換アミノベンゼンスルホン酸類;ニトロ基置換アミノベンゼンスルホン酸類;フルオロアミノベンゼンスルホン酸、クロロアミノベンゼンスルホン酸、ブロムアミノベンゼンスルホン酸等のハロゲン置換アミノベンゼンスルホン酸類などを挙げることができる。
これらの中では、導電性や溶解性に特に優れる導電性ポリマー(A)が得られる点で、アルキル基置換アミノベンゼンスルホン酸類、アルコキシ基置換アミノベンゼンスルホン酸類、ヒドロキシ基置換アミノベンゼンスルホン酸類、又はハロゲン置換アミノベンゼンスルホン酸類が好ましく、製造が容易な点で、アルコキシ基置換アミノベンゼンスルホン酸類、そのアルカリ金属塩、アンモニウム塩及び置換アンモニウム塩が特に好ましい。
これらのスルホン酸基置換アニリンは、いずれか1種を単独で用いてもよいし、2種以上を任意の割合で混合して用いてもよい。
Examples of the sulfon group-substituted aniline other than aminobenzene sulfonic acids include methyl aminobenzene sulfonic acid, ethylaminobenzene sulfonic acid, n-propylaminobenzene sulfonic acid, iso-propylaminobenzene sulfonic acid, n-butylaminobenzene sulfonic acid, and the like. Alkyl group-substituted aminobenzene sulfonic acids such as sec-butylaminobenzene sulfonic acid and t-butyl aminobenzene sulfonic acid; alkoxy group-substituted aminobenzene sulfonic acids such as methoxyaminobenzene sulfonic acid, ethoxyaminobenzene sulfonic acid and propoxyaminobenzene sulfonic acid. Acids; hydroxy group-substituted aminobenzene sulfonic acids; nitro group-substituted aminobenzene sulfonic acids; halogen-substituted aminobenzene sulfonic acids such as fluoroaminobenzene sulfonic acid, chloroaminobenzene sulfonic acid, and bromaminobenzene sulfonic acid can be mentioned.
Among these, alkyl group-substituted aminobenzene sulfonic acids, alkoxy group-substituted aminobenzene sulfonic acids, hydroxy group-substituted aminobenzene sulfonic acids, or hydroxy group-substituted aminobenzene sulfonic acids, in that a conductive polymer (A) having particularly excellent conductivity and solubility can be obtained. Halogen-substituted aminobenzene sulfonic acids are preferable, and alkoxy group-substituted aminobenzene sulfonic acids, alkali metal salts, ammonium salts and substituted ammonium salts thereof are particularly preferable in terms of ease of production.
Any one of these sulfonic acid group-substituted anilines may be used alone, or two or more thereof may be mixed and used in an arbitrary ratio.
重合溶媒としては、水、有機溶媒、水と有機溶媒との混合溶媒などが挙げられる。有機溶媒としては、例えばメタノール、エタノール、イソプロピルアルコール、プロピルアルコール、ブタノール等のアルコール類;アセトン、エチルイソブチルケトン等のケトン類;エチレングリコール、エチレングリコールメチルエーテル等のエチレングリコール類;プロピレングリコール、プロピレングリコールメチルエーテル、プロピレングリコールエチルエーテル、プロピレングリコールブチルエーテル、プロピレングリコールプロピルエーテル等のプロピレングリコール類;N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド等のアミド類;N−メチルピロリドン、N−エチルピロリドン等のピロリドン類などが挙げられる。
重合溶媒としては、水、又は水と有機溶媒との混合溶媒が好ましい。
Examples of the polymerization solvent include water, an organic solvent, and a mixed solvent of water and an organic solvent. Examples of the organic solvent include alcohols such as methanol, ethanol, isopropyl alcohol, propyl alcohol and butanol; ketones such as acetone and ethyl isobutyl ketone; ethylene glycols such as ethylene glycol and ethylene glycol methyl ether; propylene glycol and propylene glycol. Propropylene glycols such as methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether and propylene glycol propyl ether; amides such as N, N-dimethylformamide and N, N-dimethylacetamide; N-methylpyrrolidone, N-ethylpyrrolidone and the like. Pyrrolidones and the like.
As the polymerization solvent, water or a mixed solvent of water and an organic solvent is preferable.
酸化剤としては、標準電極電位が0.6V以上である酸化剤であれば限定はないが、例えばペルオキソ二硫酸、ペルオキソ二硫酸アンモニウム、ペルオキソ二硫酸ナトリウム、ペルオキソ二硫酸カリウム等のペルオキソ二硫酸類;過酸化水素などが挙げられる。
これらの酸化剤は、いずれか1種を単独で用いてもよいし、2種以上を任意の割合で混合して用いてもよい。
The oxidizing agent is not limited as long as it has a standard electrode potential of 0.6 V or more, but peroxodisulfates such as peroxodisulfuric acid, ammonium peroxodisulfate, sodium peroxodisulfate, and potassium peroxodisulfate; Examples include hydrogen peroxide.
Any one of these oxidizing agents may be used alone, or two or more thereof may be mixed and used at an arbitrary ratio.
重合工程は、重合溶媒及び酸化剤に加えて、塩基性反応助剤の存在下で原料モノマーを重合してもよい。
塩基性反応助剤としては、例えば水酸化ナトリウム、水酸化カリウム、水酸化リチウム等の無機塩基;アンモニア;メチルアミン、ジメチルアミン、トリメチルアミン、エチルアミン、ジエチルアミン、トリエチルアミン、エチルメチルアミン、エチルジメチルアミン、ジエチルメチルアミン等の脂式アミン類;環式飽和アミン類;ピリジン、α−ピコリン、β−ピコリン、γ−ピコリン、キノリン等の環式不飽和アミン類などが挙げられる。
これらの中では、無機塩基、脂式アミン類、環式不飽和アミン類が好ましく、環式不飽和アミン類がより好ましい。
これらの塩基性反応助剤は、いずれか1種を単独で用いてもよいし、2種以上を任意の割合で混合して用いてもよい。
In the polymerization step, the raw material monomer may be polymerized in the presence of a basic reaction aid in addition to the polymerization solvent and the oxidizing agent.
Examples of the basic reaction aid include inorganic bases such as sodium hydroxide, potassium hydroxide, and lithium hydroxide; ammonia; methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylmethylamine, ethyldimethylamine, diethyl. Fatty amines such as methylamine; cyclic saturated amines; cyclic unsaturated amines such as pyridine, α-picoline, β-picoline, γ-picoline and quinoline can be mentioned.
Among these, inorganic bases, aliphatic amines and cyclic unsaturated amines are preferable, and cyclic unsaturated amines are more preferable.
Any one of these basic reaction aids may be used alone, or two or more thereof may be mixed and used in an arbitrary ratio.
重合の方法としては、例えば、酸化剤溶液中に原料モノマー溶液を滴下する方法、原料モノマー溶液に酸化剤溶液を滴下する方法、反応容器等に原料モノマー溶液と、酸化剤溶液を同時に滴下する方法などが挙げられる。原料モノマー溶液には、必要に応じて塩基性反応助剤が含まれていてもよい。
酸化剤溶液及び原料モノマー溶液の溶媒としては、上述した重合溶媒を用いることができる。
Examples of the polymerization method include a method of dropping the raw material monomer solution into the oxidizing agent solution, a method of dropping the oxidizing agent solution into the raw material monomer solution, and a method of dropping the raw material monomer solution and the oxidizing agent solution into a reaction vessel or the like at the same time. And so on. The raw material monomer solution may contain a basic reaction aid, if necessary.
As the solvent of the oxidizing agent solution and the raw material monomer solution, the above-mentioned polymerization solvent can be used.
重合反応の反応温度は、50℃以下が好ましく、−15〜30℃がより好ましく、−10〜20℃がさらに好ましい。重合反応の反応温度が50℃以下、特に30℃以下であれば、副反応の進行や、生成する導電性ポリマー(A)の主鎖の酸化還元構造の変化による導電性の低下を抑止できる。重合反応の反応温度が−15℃以上であれば、十分な反応速度を維持し、反応時間を短縮できる。 The reaction temperature of the polymerization reaction is preferably 50 ° C. or lower, more preferably -15 to 30 ° C., and even more preferably -10 to 20 ° C. When the reaction temperature of the polymerization reaction is 50 ° C. or lower, particularly 30 ° C. or lower, it is possible to suppress a decrease in conductivity due to the progress of side reactions and changes in the redox structure of the main chain of the conductive polymer (A) to be produced. When the reaction temperature of the polymerization reaction is −15 ° C. or higher, a sufficient reaction rate can be maintained and the reaction time can be shortened.
重合工程により、反応生成物である導電性ポリマー(A)が重合溶媒に溶解または沈殿した状態で得られる。
反応生成物が重合溶媒に溶解している場合は、重合溶媒を留去して反応生成物を得る。
反応生成物が重合溶媒に沈殿している場合は、遠心分離器等の濾過器により重合溶媒を濾別して反応生成物を得る。
By the polymerization step, the conductive polymer (A) which is a reaction product is obtained in a state of being dissolved or precipitated in a polymerization solvent.
When the reaction product is dissolved in the polymerization solvent, the polymerization solvent is distilled off to obtain the reaction product.
When the reaction product is precipitated in the polymerization solvent, the polymerization solvent is filtered off by a filter such as a centrifuge to obtain a reaction product.
反応生成物には、未反応の原料モノマー、副反応の併発に伴うオリゴマー等の低分子量成分が含まれている場合がある。これら低分子量成分は不純物であり、導電性を阻害する要因となる。
よって、重合工程の後、反応生成物を精製して低分子量成分を除去することが好ましい。
The reaction product may contain low molecular weight components such as unreacted raw material monomers and oligomers associated with the occurrence of side reactions. These low molecular weight components are impurities and cause a factor of inhibiting conductivity.
Therefore, after the polymerization step, it is preferable to purify the reaction product to remove low molecular weight components.
導電性ポリマー(A)の含有量は、導電性組成物の総質量に対して、0.1〜5質量%が好ましく、0.2〜3質量%がより好ましく、0.5〜2質量%がさらに好ましい。
また、導電性ポリマー(A)の含有量は、導電性組成物の固形分の総質量に対して、50〜100質量%が好ましく、80〜100質量%がより好ましく、95〜100質量%がさらに好ましい。なお、導電性組成物の固形分は、導電性組成物から溶剤(B)を除いた残分である。
導電性ポリマー(A)の含有量が上記範囲内であれば、導電性組成物の塗布性と、導電性組成物より形成される塗膜の導電性のバランスにより優れる。
The content of the conductive polymer (A) is preferably 0.1 to 5% by mass, more preferably 0.2 to 3% by mass, and 0.5 to 2% by mass with respect to the total mass of the conductive composition. Is even more preferable.
The content of the conductive polymer (A) is preferably 50 to 100% by mass, more preferably 80 to 100% by mass, and 95 to 100% by mass with respect to the total mass of the solid content of the conductive composition. More preferred. The solid content of the conductive composition is the residue obtained by removing the solvent (B) from the conductive composition.
When the content of the conductive polymer (A) is within the above range, the balance between the coatability of the conductive composition and the conductivity of the coating film formed from the conductive composition is excellent.
<溶剤(B)>
溶剤(B)としては、導電性ポリマー(A)と、後述の添加剤(C)及び塩基性化合物(D)を溶解することができる溶剤であれば、本発明の効果を有する限り特に限定はされないが、水、有機溶剤、水と有機溶剤との混合溶剤が挙げられる。
水としては、水道水、イオン交換水、純水、超純水、蒸留水などが挙げられる。
有機溶剤としては、導電性ポリマー(A)の製造方法の説明において先に例示した重合溶媒のうちの有機溶媒が挙げられる。
溶剤(B)として、水と有機溶剤との混合溶剤を用いる場合、これらの質量比(水/有機溶剤)は1/100〜100/1であることが好ましく、2/100〜100/2であることがより好ましい。
<Solvent (B)>
The solvent (B) is not particularly limited as long as it has the effect of the present invention as long as it is a solvent capable of dissolving the conductive polymer (A) and the additive (C) and the basic compound (D) described later. Although not, water, an organic solvent, and a mixed solvent of water and an organic solvent can be mentioned.
Examples of water include tap water, ion-exchanged water, pure water, ultrapure water, distilled water and the like.
Examples of the organic solvent include organic solvents among the polymerization solvents exemplified above in the description of the method for producing the conductive polymer (A).
When a mixed solvent of water and an organic solvent is used as the solvent (B), the mass ratio (water / organic solvent) of these is preferably 1/100 to 100/1, and 2/100 to 100/2. More preferably.
溶剤(B)の含有量は、導電性組成物の総質量に対して、1〜99.9質量%が好ましく、10〜98質量%がより好ましく、50〜98質量%がさらに好ましい。溶剤(B)の含有量が上記範囲内であれば、塗布性がより向上する。 The content of the solvent (B) is preferably 1 to 99.9% by mass, more preferably 10 to 98% by mass, still more preferably 50 to 98% by mass, based on the total mass of the conductive composition. When the content of the solvent (B) is within the above range, the coatability is further improved.
<添加剤(C)>
添加剤(C)は、融点が60℃以上であり、かつ導電性ポリマー(A)、溶剤(B)及び後述の塩基性化合物(D)以外の化合物である。
導電性組成物をレジスト層上に塗布し、プリベーク処理やPEB処理等の加熱処理を行うと、加熱処理温度よりも添加剤(C)の融点が低い場合、添加剤(C)は溶融する。しかし、添加剤(C)の融点が60℃以上であれば、加熱処理により添加剤(C)が溶融してもレジスト層へ移行しにくく、レジスト層の膜減りを抑制できる。添加剤(C)が溶融してもレジスト層へ移行しにくい理由は定かではないが、融点が60℃以上である添加剤(C)は、導電性ポリマー(A)中に混ざりやすく、しかも添加剤(C)の粘度が高い傾向にある。そのため、添加剤(C)が溶融しても導電膜中に留まり、レジスト層へ移行しにくいと考えられる。
添加剤(C)の融点は60℃以上であり、65℃以上が好ましく、67℃以上がより好ましく、69℃以上がさらに好ましく、70℃以上がさらに好ましく、73℃以上が特に好ましく、75℃以上が最も好ましい。添加剤(C)の融点が高くなるほど、レジスト層への移行が抑制されやすくなるが、融点が高すぎると粘度が上昇しすぎて導電性組成物の塗布性に影響する場合がある。加えて、融点が高すぎると水への溶解性が低下する傾向にもある。レジスト層上に形成された導電膜は最終的に水に溶かしてレジスト層から剥離するが、水への溶解性が低下すると剥離時に溶け残りが発生してしまう。このような観点から、添加剤(C)の融点は300℃以下が好ましい。
添加剤(C)の融点は、JIS K 0064:1992における化学製品の融点及び溶融範囲測定方法に準拠して測定される。市販の添加剤(C)を用いる場合は、カタログ値を用いてもよい。
<Additive (C)>
The additive (C) has a melting point of 60 ° C. or higher, and is a compound other than the conductive polymer (A), the solvent (B), and the basic compound (D) described later.
When the conductive composition is applied onto the resist layer and heat treatment such as prebaking treatment or PEB treatment is performed, the additive (C) melts when the melting point of the additive (C) is lower than the heat treatment temperature. However, when the melting point of the additive (C) is 60 ° C. or higher, even if the additive (C) is melted by the heat treatment, it is difficult to migrate to the resist layer, and the film loss of the resist layer can be suppressed. Although it is not clear why the additive (C) is difficult to transfer to the resist layer even if it melts, the additive (C) having a melting point of 60 ° C. or higher is easily mixed in the conductive polymer (A) and is added. The viscosity of the agent (C) tends to be high. Therefore, even if the additive (C) melts, it remains in the conductive film and is unlikely to migrate to the resist layer.
The melting point of the additive (C) is 60 ° C. or higher, preferably 65 ° C. or higher, more preferably 67 ° C. or higher, further preferably 69 ° C. or higher, further preferably 70 ° C. or higher, particularly preferably 73 ° C. or higher, and particularly preferably 75 ° C. The above is the most preferable. The higher the melting point of the additive (C), the easier it is to suppress the migration to the resist layer. However, if the melting point is too high, the viscosity may increase too much and affect the coatability of the conductive composition. In addition, if the melting point is too high, the solubility in water tends to decrease. The conductive film formed on the resist layer is finally dissolved in water and peeled off from the resist layer, but if the solubility in water is lowered, undissolved residue is generated at the time of peeling. From this point of view, the melting point of the additive (C) is preferably 300 ° C. or lower.
The melting point of the additive (C) is measured according to the method for measuring the melting point and melting range of chemical products in JIS K 0064: 1992. When a commercially available additive (C) is used, the catalog value may be used.
添加剤(C)としては、融点が60℃以上であり、かつ導電性ポリマー(A)、溶剤(B)及び塩基性化合物(D)以外の化合物であれば特に限定されないが、例えば、界面活性剤、高分子化合物(ただし、導電性ポリマー(A)、界面活性剤及び塩基性化合物(D)を除く)、顔料、消泡剤、紫外線吸収剤、酸化防止剤、耐熱性向上剤、レベリング剤、たれ防止剤、艶消し剤、防腐剤などが挙げられる。これらの中でも、導電性組成物を基材やレジスト層の表面に塗布する際の塗布性が向上する観点から、添加剤(C)としては界面活性剤が好ましい。 The additive (C) is not particularly limited as long as it has a melting point of 60 ° C. or higher and is a compound other than the conductive polymer (A), the solvent (B) and the basic compound (D), but is not particularly limited. Agents, polymer compounds (excluding conductive polymers (A), surfactants and basic compounds (D)), pigments, defoamers, UV absorbers, antioxidants, heat resistance improvers, leveling agents , Anti-sagging agent, matting agent, preservative and the like. Among these, a surfactant is preferable as the additive (C) from the viewpoint of improving the coatability when the conductive composition is applied to the surface of the base material or the resist layer.
界面活性剤としては、陰イオン系界面活性剤、陽イオン系界面活性剤、両性界面活性剤、非イオン系界面活性剤などが挙げられる。これらの界面活性剤は、いずれか1種を単独で用いてもよいし、2種以上を任意の割合で混合して用いてもよい。 Examples of the surfactant include anionic surfactants, cationic surfactants, amphoteric surfactants, nonionic surfactants and the like. Any one of these surfactants may be used alone, or two or more of these surfactants may be mixed and used in an arbitrary ratio.
陰イオン系界面活性剤としては、例えば、ジアルキルスルホコハク酸ナトリウム、オクタン酸ナトリウム、デカン酸ナトリウム、ラウリン酸ナトリウム、ミリスチン酸ナトリウム、パルミチン酸ナトリウム、ステアリン酸ナトリウム、ペルフルオロノナン酸、N−ラウロイルサルコシンナトリウム、ココイルグルタミン酸ナトリウム、アルファスルホ脂肪酸メチルエステル塩、ラウリル硫酸ナトリウム、ミリスチル硫酸ナトリウム、ラウレス硫酸ナトリウム、ポリオキシエチレンアルキルフェノールスルホン酸ナトリウム、ラウリル硫酸アンモニウム、ラウリルリン酸、ラウリルリン酸ナトリウム、ラウリルリン酸カリウムなどが挙げられる。 Examples of anionic surfactants include sodium dialkyl sulfosuccinate, sodium octanate, sodium decanoate, sodium laurate, sodium myristate, sodium palmitate, sodium stearate, perfluorononanoic acid, and sodium N-lauroyl sarcosin. Sodium cocoyl glutamate, alpha sulfo fatty acid methyl ester salt, sodium lauryl sulfate, sodium myristyl sulfate, sodium laureth sulfate, sodium polyoxyethylene alkylphenol sulfonate, ammonium lauryl sulfate, lauryl phosphate, sodium lauryl phosphate, potassium lauryl phosphate, etc. Be done.
陽イオン系界面活性剤としては、例えば、塩化テトラメチルアンモニウム、水酸化テトラメチルアンモニウム、塩化テトラブチルアンモニウム、塩化ドデシルジメチルベンジルアンモニウム、塩化アルキルトリメチルアンモニウム、塩化オクチルトリメチルアンモニウム、塩化デシルトリメチルアンモニウム、塩化ドデシルトリメチルアンモニウム、塩化テトラデシルトリメチルアンモニウム、塩化セチルトリメチルアンモニウム、塩化ステアリルトリメチルアンモニウム、臭化アルキルトリメチルアンモニウム、臭化ヘキサデシルトリメチルアンモニウム、塩化ベンジルトリメチルアンモニウム、塩化ベンジルトリエチルアンモニウム、塩化ベンザルコニウム、臭化ベンザルコニウム、塩化ベンゼトニウム、塩化ジアルキルジメチルアンモニウム、塩化ジデシルジメチルアンモニウム、塩化ジステアリルジメチルアンモニウム、モノメチルアミン塩酸塩、ジメチルアミン塩酸塩、トリメチルアミン塩酸塩、塩化ブチルピリジニウム、塩化ドデシルピリジニウム、塩化セチルピリジニウムなどが挙げられる。 Examples of cationic surfactants include tetramethylammonium chloride, tetramethylammonium hydroxide, tetrabutylammonium chloride, dodecyldimethylbenzylammonium chloride, alkyltrimethylammonium chloride, octyltrimethylammonium chloride, decyltrimethylammonium chloride, and dodecyl chloride. Trimethylammonium, tetradecyltrimethylammonium chloride, cetyltrimethylammonium chloride, stearyltrimethylammonium chloride, alkyltrimethylammonium bromide, hexadecyltrimethylammonium bromide, benzyltrimethylammonium chloride, benzyltriethylammonium chloride, benzalkonium chloride, benzal bromide Luconium, benzethonium chloride, dialkyldimethylammonium chloride, didecyldimethylammonium chloride, distearyldimethylammonium chloride, monomethylamine hydrochloride, dimethylamine hydrochloride, trimethylamine hydrochloride, butylpyridinium chloride, dodecylpyridinium chloride, cetylpyridinium chloride, etc. Can be mentioned.
両性界面活性剤としては、例えば、ラウリルジメチルアミノ酢酸ベタイン、ステアリルジメチルアミノ酢酸ベタイン、ドデシルアミノメチルジメチルスルホプロピルベタイン、オクタデシルアミノメチルジメチルスルホプロピルベタイン、コカミドプロピルベタイン、コカミドプロピルヒドロキシスルタイン、2−アルキル−N−カルボキシメチル−N−ヒドロキシエチルイミダゾリニウムベタイン、ラウロイルグルタミン酸ナトリウム、ラウロイルグルタミン酸カリウム、ラウロイルメチル−β−アラニン、ラウリルジメチルアミン−N−オキシド、オレイルジメチルアミンN−オキシドなどが挙げられる。 Examples of the amphoteric surfactant include lauryldimethylaminoacetic acid betaine, stearyldimethylaminoacetic acid betaine, dodecylaminomethyldimethylsulfopropyl betaine, octadecylaminomethyldimethylsulfopropyl betaine, cocamidopropyl betaine, cocamidopropyl hydroxysultaine, 2 Examples thereof include -alkyl-N-carboxymethyl-N-hydroxyethyl imidazolinium betaine, sodium lauroyl glutamate, potassium lauroyl glutamate, lauroylmethyl-β-alanine, lauryldimethylamine-N-oxide, and oleyldimethylamine N-oxide. ..
非イオン系界面活性剤としては、例えば、ラウリン酸グリセリン、モノステアリン酸グリセリン、ソルビタン脂肪酸エステル、ショ糖脂肪酸エステル、ポリオキシエチレンアルキルエーテル、ペンタエチレングリコールモノドデシルエーテル、オクタエチレングリコールモノドデシルエーテル、ポリオキシエチレンアルキルフェニルエーテル、オクチルフェノールエトキシレート、ノニルフェノールエトキシレート、ポリオキシエチレンポリオキシプロピレングリコール、ポリオキシエチレンソルビタン脂肪酸エステル、ポリオキシエチレンヘキシタン脂肪酸エステル、ソルビタン脂肪酸エステルポリエチレングリコール、ラウリン酸ジエタノールアミド、オレイン酸ジエタノールアミド、ステアリン酸ジエタノールアミド、オクチルグルコシド、デシルグルコシド、ラウリルグルコシド、セタノール、ステアリルアルコール、オレイルアルコールなどが挙げられる。 Examples of the nonionic surfactant include glycerin laurate, glycerin monostearate, sorbitan fatty acid ester, sucrose fatty acid ester, polyoxyethylene alkyl ether, pentaethylene glycol monododecyl ether, octaethylene glycol monododecyl ether, and poly. Oxyethylene alkylphenyl ether, octylphenol ethoxylate, nonylphenol ethoxylate, polyoxyethylene polyoxypropylene glycol, polyoxyethylene sorbitan fatty acid ester, polyoxyethylene hexitan fatty acid ester, sorbitan fatty acid ester polyethylene glycol, laurate diethanolamide, oleic acid Examples thereof include diethanolamide, stearic acid diethanolamide, octyl glucoside, decyl glucoside, lauryl glucoside, cetanol, stearyl alcohol and oleyl alcohol.
非イオン系界面活性剤として、上述した以外にも、含窒素官能基及び末端疎水性基を有する水溶性ポリマーを用いてもよい。この水溶性ポリマーは従来の界面活性剤とは異なり、含窒素官能基を有する主鎖部分(親水性部分)と、末端の疎水性基部分とによって界面活性能を有し、塗布性の向上効果が高い。よって、他の界面活性剤を併用しなくても、優れた塗布性を導電性組成物に付与できる。 In addition to the above, a water-soluble polymer having a nitrogen-containing functional group and a terminal hydrophobic group may be used as the nonionic surfactant. Unlike conventional surfactants, this water-soluble polymer has a surface-active ability due to a main chain portion (hydrophilic portion) having a nitrogen-containing functional group and a hydrophobic group portion at the end, and has an effect of improving coatability. Is high. Therefore, excellent coatability can be imparted to the conductive composition without using other surfactants in combination.
含窒素官能基としては、溶解性の観点から、アミド基が好ましい。
末端疎水性基としては、例えばアルキル基、アラルキル基、アリール基、アルコキシ基、アラルキルオキシ基、アリールオキシ基、アルキルチオ基、アラルキルチオ基、アリールチオ基、一級又は二級のアルキルアミノ基、アラルキルアミノ基、アリールアミノ基などが挙げられる。これらの中でも、アルキルチオ基、アラルキルチオ基、アリールチオ基が好ましい。
末端疎水性基の炭素数は、3〜100が好ましく、5〜50がより好ましく、7〜30が特に好ましい。
水溶性ポリマー中の末端疎水性基の数は特に制限されない。また、同一分子内に末端疎水性基を2つ以上有する場合、末端疎水性基は同じ種類であってもよいし、異なる種類であってもよい。
As the nitrogen-containing functional group, an amide group is preferable from the viewpoint of solubility.
Examples of the terminal hydrophobic group include an alkyl group, an aralkyl group, an aryl group, an alkoxy group, an aralkyloxy group, an aryloxy group, an alkylthio group, an aralkylthio group, an arylthio group, a primary or secondary alkylamino group, and an aralkylamino group. , Arylamino group and the like. Among these, an alkylthio group, an aralkylthio group and an arylthio group are preferable.
The number of carbon atoms of the terminal hydrophobic group is preferably 3 to 100, more preferably 5 to 50, and particularly preferably 7 to 30.
The number of terminal hydrophobic groups in the water-soluble polymer is not particularly limited. Further, when two or more terminal hydrophobic groups are contained in the same molecule, the terminal hydrophobic groups may be of the same type or different types.
水溶性ポリマーとしては、含窒素官能基を有するビニルモノマーのホモポリマー、又は含窒素官能基を有するビニルモノマーと、含窒素官能基を有さないビニルモノマー(その他のビニルモノマー)とのコポリマーを主鎖構造とし、かつ、ポリマーを構成する繰り返し単位以外の部位に疎水性基を有する化合物が好ましい。
含窒素官能基を有するビニルモノマーとしては、アクリルアミド及びその誘導体、含窒素官能基を有する複素環状モノマー等が挙げられ、その中でもアミド結合を持つものが好ましい。具体的には、アクリルアミド、N,N−ジメチルアクリルアミド、N−イソプロピルアクリルアミド、N,N−ジエチルアクリルアミド、N,N−ジメチルアミノプロピルアクリルアミド、t−ブチルアクリルアミド、ジアセトンアクリルアミド、N,N’−メチレンビスアクリルアミド、N−ビニル−N−メチルアクリルアミド、N−ビニルピロリドン、N−ビニルカプロラクタム等が挙げられる。これらの中でも、溶解性の観点から、アクリルアミド、N−ビニルピロリドン、N−ビニルカプロラクタム等が特に好ましい。
その他のビニルモノマーとしては、含窒素官能基を有するビニルモノマーを共重合可能であれば特に制限されないが、例えば、スチレン、アクリル酸、酢酸ビニル、長鎖α−オレフィンなどが挙げられる。
The water-soluble polymer is mainly a homopolymer of a vinyl monomer having a nitrogen-containing functional group, or a copolymer of a vinyl monomer having a nitrogen-containing functional group and a vinyl monomer having no nitrogen-containing functional group (other vinyl monomers). A compound having a chain structure and having a hydrophobic group at a site other than the repeating unit constituting the polymer is preferable.
Examples of the vinyl monomer having a nitrogen-containing functional group include acrylamide and its derivatives, a heterocyclic monomer having a nitrogen-containing functional group, and the like, and among them, those having an amide bond are preferable. Specifically, acrylamide, N, N-dimethylacrylamide, N-isopropylacrylamide, N, N-diethylacrylamide, N, N-dimethylaminopropylacrylamide, t-butylacrylamide, diacetoneacrylamide, N, N'-methylene Examples thereof include bisacrylamide, N-vinyl-N-methylacrylamide, N-vinylpyrrolidone, and N-vinylcaprolactam. Among these, acrylamide, N-vinylpyrrolidone, N-vinylcaprolactam and the like are particularly preferable from the viewpoint of solubility.
The other vinyl monomer is not particularly limited as long as it can copolymerize a vinyl monomer having a nitrogen-containing functional group, and examples thereof include styrene, acrylic acid, vinyl acetate, and long-chain α-olefins.
水溶性ポリマーへの末端疎水性基の導入方法としては特に制限されないが、通常、ビニル重合時の連鎖移動剤を選択することにより導入するのが簡便で好ましい。この場合、連鎖移動剤としてはアルキル基、アラルキル基、アリール基、アルキルチオ基、アラルキルチオ基、アリールチオ基等の疎水性基を含む基が、得られる重合体の末端に導入されるものであれば特に限定はされない。例えば、末端疎水性基としてアルキルチオ基、アラルキルチオ基、又はアリールチオ基を有する水溶性ポリマーを得る場合は、これらの末端疎水性基に対応する疎水性基を有する連鎖移動剤、具体的にはチオール、ジスルフィド、チオエーテルなどを用いてビニル重合することが好ましい。 The method for introducing the terminal hydrophobic group into the water-soluble polymer is not particularly limited, but it is usually convenient and preferable to introduce it by selecting a chain transfer agent at the time of vinyl polymerization. In this case, as the chain transfer agent, if a group containing a hydrophobic group such as an alkyl group, an aralkyl group, an aryl group, an alkylthio group, an aralkylthio group or an arylthio group is introduced into the terminal of the obtained polymer. There is no particular limitation. For example, when a water-soluble polymer having an alkylthio group, an aralkylthio group, or an arylthio group is obtained as a terminal hydrophobic group, a chain transfer agent having a hydrophobic group corresponding to these terminal hydrophobic groups, specifically, a thiol , Disulfide, thioether and the like are preferably used for vinyl polymerization.
水溶性ポリマーの主鎖部分は水溶性であり、含窒素官能基を有する。主鎖部分の単位数(重合度)は、1分子中に2〜1000が好ましく、2〜1000がより好ましく、2〜10が特に好ましい。含窒素官能基を有する主鎖部分の単位数が大きすぎる場合は、界面活性能が低下する傾向がある。 The main chain portion of the water-soluble polymer is water-soluble and has a nitrogen-containing functional group. The number of units (degree of polymerization) of the main chain portion is preferably 2 to 1000, more preferably 2 to 1000, and particularly preferably 2 to 10 in one molecule. If the number of units of the main chain portion having a nitrogen-containing functional group is too large, the surface activity tends to decrease.
界面活性剤の分子量が高いほど融点も高くなる傾向にある。
界面活性剤がポリマーの場合、界面活性剤を精製することで界面活性剤中の残留モノマーを減らすことができ、界面活性剤の分子量は高くなる傾向にある。界面活性剤の精製方法としては、再沈殿法、再結晶法、溶媒抽出法が効果的である。
界面活性剤の分子量は、GPCにより測定される、ポリエチレングリコール換算の値である。
The higher the molecular weight of the surfactant, the higher the melting point tends to be.
When the surfactant is a polymer, the residual monomer in the surfactant can be reduced by purifying the surfactant, and the molecular weight of the surfactant tends to be high. As a method for purifying the surfactant, a reprecipitation method, a recrystallization method, and a solvent extraction method are effective.
The molecular weight of the surfactant is a polyethylene glycol-equivalent value measured by GPC.
高分子化合物としては、例えばポリビニルホルマール、ポリビニルブチラール等のポリビニルアルコール誘導体類及びその変性体、部分けん化型又は完全けん化型ポリビニルアルコール及びその誘導体、デンプン及びその変性体(酸化デンプン、リン酸エステル化デンプン、カチオン化デンプン等)、セルロース誘導体(カルボキシメチルセルロース、メチルセルロース、ヒドロキシプロピルセルロース、ヒドロキシエチルセルロース及びこれらの塩等)、ポリアクリルアミド、ポリ(N−t−ブチルアクリルアミド)、ポリアクリルアミドメチルプロパンスルホン酸等のポリアクリルアミド類、ポリビニルピロリドン、ポリアクリル酸(塩)、ポリエチレングリコール、水溶性アルキド樹脂、水溶性メラミン樹脂、水溶性尿素樹脂、水溶性フェノール樹脂、水溶性エポキシ樹脂、水溶性ポリブタジエン樹脂、水溶性アクリル樹脂、水溶性ウレタン樹脂、水溶性アクリルスチレン共重合体樹脂、水溶性酢酸ビニルアクリル共重合体樹脂、水溶性ポリエステル樹脂、水溶性スチレンマレイン酸共重合樹脂、水溶性フッ素樹脂及びこれらの共重合体が挙げられる。 Examples of the polymer compound include polyvinyl alcohol derivatives such as polyvinyl formal and polyvinyl butyral and modified products thereof, partially saponified or fully saponified polyvinyl alcohol and derivatives thereof, starch and modified products thereof (oxidized starch, phosphate esterified starch). , Cationic starch, etc.), cellulose derivatives (carboxymethyl cellulose, methyl cellulose, hydroxypropyl cellulose, hydroxyethyl cellulose and salts thereof, etc.), polyacrylamide, poly (Nt-butylacrylamide), polyacrylamide, polypropanesulfonic acid, etc. Acrylamides, polyvinylpyrrolidone, polyacrylic acid (salt), polyethylene glycol, water-soluble alkyd resin, water-soluble melamine resin, water-soluble urea resin, water-soluble phenol resin, water-soluble epoxy resin, water-soluble polybutadiene resin, water-soluble acrylic resin , Water-soluble urethane resin, water-soluble acrylic styrene copolymer resin, water-soluble vinyl acetate acrylic copolymer resin, water-soluble polyester resin, water-soluble styrene maleic acid copolymer resin, water-soluble fluororesin and copolymers thereof Can be mentioned.
添加剤(C)の含有量は、導電性ポリマー(A)と添加剤(C)と塩基性化合物(D)の合計を100質量部としたときに、5〜80質量部が好ましく、10〜70質量部がより好ましく、10〜60質量部がさらに好ましい。界面活性剤の含有量が上記範囲内であれば、導電性組成物のレジスト層への塗布性がより向上する。 The content of the additive (C) is preferably 5 to 80 parts by mass, preferably 10 to 80 parts by mass, when the total of the conductive polymer (A), the additive (C) and the basic compound (D) is 100 parts by mass. 70 parts by mass is more preferable, and 10 to 60 parts by mass is further preferable. When the content of the surfactant is within the above range, the applicability of the conductive composition to the resist layer is further improved.
<塩基性化合物(D)>
導電性組成物は、塩基性化合物(D)をさらに含んでいてもよい。
導電性組成物が塩基性化合物(D)を含んでいれば、導電性ポリマー(A)の安定性を高めることが可能になると考えられる。
<Basic compound (D)>
The conductive composition may further contain the basic compound (D).
If the conductive composition contains the basic compound (D), it is considered possible to enhance the stability of the conductive polymer (A).
塩基性化合物(D)としては、塩基性を有する化合物であれば特に限定されないが、例えば、下記の4級アンモニウム塩(d−1)、塩基性化合物(d−2)、塩基性化合物(d−3)などが挙げられる。
第4級アンモニウム塩(d−1):窒素原子に結合する4つの置換基のうちの少なくとも1つが炭素数1以上の炭化水素基である第4級アンモニウム化合物。
塩基性化合物(d−2):1つ以上の窒素原子を有する塩基性化合物(ただし、第4級アンモニウム塩(d−1)及び塩基性化合物(d−3)を除く。)。
塩基性化合物(d−3):同一分子内に塩基性基と2つ以上のヒドロキシ基とを有し、かつ30℃以上の融点を有する塩基性化合物。
The basic compound (D) is not particularly limited as long as it is a compound having basicity, and for example, the following quaternary ammonium salt (d-1), basic compound (d-2), and basic compound (d) are used. -3) and the like.
Quadruple ammonium salt (d-1): A quaternary ammonium compound in which at least one of the four substituents bonded to the nitrogen atom is a hydrocarbon group having one or more carbon atoms.
Basic compound (d-2): A basic compound having one or more nitrogen atoms (excluding the quaternary ammonium salt (d-1) and the basic compound (d-3)).
Basic compound (d-3): A basic compound having a basic group and two or more hydroxy groups in the same molecule and having a melting point of 30 ° C. or higher.
第4級アンモニウム化合物(d−1)において、4つの置換基が結合する窒素原子は、第4級アンモニウムイオンの窒素原子である。
第4級アンモニウム化合物(d−1)において、第4級アンモニウムイオンの窒素原子に結合する炭化水素基としては、アルキル基、アラルキル基、アリール基などが挙げられる。
第4級アンモニウム化合物(d−1)としては、例えば、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、水酸化テトラプロピルアンモニウム、水酸化テトラブチルアンモニウム、水酸化テトラペンチルアンモニウム、水酸化テトラヘキシルアンモニウム、水酸化ベンジルトリメチルアンモニウムなどが挙げられる。
In the quaternary ammonium compound (d-1), the nitrogen atom to which the four substituents are bonded is the nitrogen atom of the quaternary ammonium ion.
In the quaternary ammonium compound (d-1), examples of the hydrocarbon group bonded to the nitrogen atom of the quaternary ammonium ion include an alkyl group, an aralkyl group, an aryl group and the like.
Examples of the quaternary ammonium compound (d-1) include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, tetrahexylammonium hydroxide, and the like. Examples thereof include benzyltrimethylammonium hydroxide.
塩基性化合物(d−2)としては、例えば、アンモニア、ピリジン、ピコリン、トリエチルアミン、4−ジメチルアミノピリジン、4−ジメチルアミノメチルピリジン、3,4−ビス(ジメチルアミノ)ピリジン、1,5−ジアザビシクロ[4.3.0]−5−ノネン(DBN)、1,8−ジアザビシクロ[5.4.0]−7−ウンデセン(DBU)、及びそれらの誘導体などが挙げられる。 Examples of the basic compound (d-2) include ammonia, pyridine, picoline, triethylamine, 4-dimethylaminopyridine, 4-dimethylaminomethylpyridine, 3,4-bis (dimethylamino) pyridine, and 1,5-diazabicyclo. Examples thereof include [4.3.0] -5-nonen (DBN), 1,8-diazabicyclo [5.4.0] -7-undecene (DBU), and derivatives thereof.
塩基性化合物(d−3)において、塩基性基としては、例えば、アレニウス塩基、ブレンステッド塩基、ルイス塩基等で定義される塩基性基が挙げられる。具体的には、アンモニア等が挙げられる。ヒドロキシ基は、−OHの状態であってもよいし、保護基で保護された状態であってもよい。保護基としては、例えば、アセチル基;トリメチルシリル基、t−ブチルジメチルシリル基等のシリル基;メトキシメチル基、エトキシメチル基、メトキシエトキシメチル基等のアセタール型保護基;ベンゾイル基;アルコキシド基などが挙げられる。
塩基性化合物(d−3)としては、2−アミノ−1,3−プロパンジオール、トリス(ヒドロキシメチル)アミノメタン、2−アミノ−2−メチル−1,3−プロパンジオール、2−アミノ−2−エチル−1,3−プロパンジオール、3−[N−トリス(ヒドロキシメチル)メチルアミノ]−2−ヒドロキシプロパンスルホン酸、N−トリス(ヒドロキシメチル)メチル−2−アミノエタンスルホン酸などが挙げられる。
In the basic compound (d-3), examples of the basic group include basic groups defined by Arrhenius base, Bronsted base, Lewis base and the like. Specific examples include ammonia and the like. The hydroxy group may be in a −OH state or may be protected by a protecting group. Examples of the protecting group include an acetyl group; a silyl group such as a trimethylsilyl group and a t-butyldimethylsilyl group; an acetal-type protecting group such as a methoxymethyl group, an ethoxymethyl group and a methoxyethoxymethyl group; a benzoyl group; an alkoxide group and the like. Can be mentioned.
Examples of the basic compound (d-3) include 2-amino-1,3-propanediol, tris (hydroxymethyl) aminomethane, 2-amino-2-methyl-1,3-propanediol, and 2-amino-2. Examples thereof include -ethyl-1,3-propanediol, 3- [N-tris (hydroxymethyl) methylamino] -2-hydroxypropanesulfonic acid, and N-tris (hydroxymethyl) methyl-2-aminoethanesulfonic acid. ..
これらの塩基性化合物は、いずれか1種を単独で用いてもよいし、2種以上を任意の割合で混合して用いてもよい。
これらの中でも、導電性ポリマー(A)の酸性基と塩を形成しやすい点から、第4級アンモニウム塩(d−1)及び塩基性化合物(d−2)からなる群から選ばれる少なくとも1種を含むことが好ましい。
Any one of these basic compounds may be used alone, or two or more thereof may be mixed and used in an arbitrary ratio.
Among these, at least one selected from the group consisting of a quaternary ammonium salt (d-1) and a basic compound (d-2) from the viewpoint of easily forming a salt with an acidic group of the conductive polymer (A). Is preferably included.
塩基性化合物(D)は、導電性ポリマー(A)中の酸性基へ効率良く作用して塩を形成しやすい。そのため、導電性組成物をレジスト層上に塗布し、プリベーク処理やPEB処理等の加熱処理を行っても、塩基性化合物(D)はレジスト層へ移行しにくいと考えられる。よって、塩基性化合物(D)の融点は特に制限されず、60℃未満であってもよいし、60℃以上であってもよい。 The basic compound (D) efficiently acts on the acidic groups in the conductive polymer (A) to easily form a salt. Therefore, even if the conductive composition is applied onto the resist layer and heat treatment such as prebaking treatment or PEB treatment is performed, it is considered that the basic compound (D) is unlikely to migrate to the resist layer. Therefore, the melting point of the basic compound (D) is not particularly limited, and may be lower than 60 ° C. or higher than 60 ° C.
塩基性化合物(D)の含有量は、導電性組成物の塗布性がより向上する観点から、導電性ポリマー(A)を構成する単位のうち、酸性基を有する単位1molに対して、0.1〜1mol当量が好ましく、0.1〜0.9mol当量がより好ましい。さらに、導電膜としての性能の保持性に優れ、導電性ポリマー(A)中の酸性基をより安定にできる観点から、0.25〜0.85mol当量が特に好ましい。 From the viewpoint of further improving the coatability of the conductive composition, the content of the basic compound (D) is determined to be 0, with respect to 1 mol of the unit having an acidic group among the units constituting the conductive polymer (A). The equivalent of 1 to 1 mol is preferable, and the equivalent of 0.1 to 0.9 mol is more preferable. Further, 0.25 to 0.85 mol equivalent is particularly preferable from the viewpoint of excellent retention of performance as a conductive film and more stable acidic groups in the conductive polymer (A).
<導電性組成物の製造方法>
導電性組成物は、上述した導電性ポリマー(A)と、溶剤(B)と、添加剤(C)と、必要に応じて塩基性化合物(D)とを混合することで得られる。
例えば、上述した導電性ポリマー(A)の製造方法により製造した、洗浄後の導電性ポリマー(A)を用いる場合、洗浄後の導電性ポリマー(A)は固体状である。そのため、予め固体状の導電性ポリマー(A)と溶剤(B)とを混合して導電性ポリマー溶液を調製し、得られた導電性ポリマー溶液に添加剤(C)と必要に応じて塩基性化合物(D)を添加して、導電性組成物を得ることができる。
<Manufacturing method of conductive composition>
The conductive composition can be obtained by mixing the above-mentioned conductive polymer (A), solvent (B), additive (C), and if necessary, basic compound (D).
For example, when the washed conductive polymer (A) produced by the above-mentioned method for producing the conductive polymer (A) is used, the washed conductive polymer (A) is in a solid state. Therefore, a solid conductive polymer (A) and a solvent (B) are mixed in advance to prepare a conductive polymer solution, and the obtained conductive polymer solution is added to the additive (C) and, if necessary, basic. Compound (D) can be added to obtain a conductive composition.
<作用効果>
上述したように、加熱処理することで界面活性剤等の添加剤が溶融すると、溶融した添加剤が導電膜からレジスト層側へ移行し、現像時に未露光部のレジスト層が溶解してしまい、レジスト層の膜減りなどが起こることがある。
しかし、本発明の導電性組成物であれば、添加剤(C)の融点が60℃以上に規定されているので、添加剤(C)が溶融してもレジスト層へ移行しにくい。よって、特に化学増幅型レジストを用いた荷電粒子線によるパターン形成法においては、添加剤由来成分の導電膜からレジスト層側への移行が抑制され、レジスト層の膜減り等の影響を抑制できる。
<Action effect>
As described above, when an additive such as a surfactant is melted by heat treatment, the melted additive is transferred from the conductive film to the resist layer side, and the resist layer in the unexposed portion is melted during development. The film of the resist layer may be reduced.
However, in the conductive composition of the present invention, since the melting point of the additive (C) is specified to be 60 ° C. or higher, even if the additive (C) melts, it is difficult to transfer to the resist layer. Therefore, particularly in the pattern forming method using a charged particle beam using a chemically amplified resist, the migration of the additive-derived component from the conductive film to the resist layer side is suppressed, and the influence of film reduction of the resist layer can be suppressed.
<用途>
本発明の導電性組成物は、荷電粒子線描画時の帯電防止用として好適である。具体的には、本発明の導電性組成物を、化学増幅型レジストを用いた荷電粒子線によるパターン形成法のレジスト層の表面に塗布して導電膜を形成する。こうして形成された導電膜がレジスト層の帯電防止膜となる。
また、上述した以外にも、本発明の導電性組成物は、例えばコンデンサ、透明電極、半導体等の材料として使用することもできる。
<Use>
The conductive composition of the present invention is suitable for antistatic use when drawing a charged particle beam. Specifically, the conductive composition of the present invention is applied to the surface of a resist layer of a pattern forming method using a charged particle beam using a chemically amplified resist to form a conductive film. The conductive film thus formed serves as an antistatic film for the resist layer.
In addition to the above, the conductive composition of the present invention can also be used as a material for, for example, a capacitor, a transparent electrode, a semiconductor, or the like.
以下、本発明を実施例により更に詳しく説明するが、以下の実施例は本発明の範囲を限定するものではない。
例1は実施例であり、例2、3は比較例である。
Hereinafter, the present invention will be described in more detail with reference to Examples, but the following Examples do not limit the scope of the present invention.
Example 1 is an example, and Examples 2 and 3 are comparative examples.
[測定・評価方法]
<導電性の評価>
基材としてガラス基材上に導電性組成物を2.0mL滴下し、基材表面全体を覆うように、スピンコーターにて2000rpm×60秒間の条件で回転塗布して塗膜を形成した後、ホットプレートにて80℃で2分間加熱処理を行い、基材上に膜厚約30nmの導電膜を形成して導電体を得た。
ハイレスタUX−MCP−HT800(株式会社三菱ケミカルアナリテック製)を用い2端子法(電極間距離20mm)にて、導電膜の表面抵抗値[Ω/□]を測定した。
[Measurement / evaluation method]
<Evaluation of conductivity>
2.0 mL of the conductive composition was dropped onto a glass base material as a base material, and the coating film was formed by rotating and coating with a spin coater under the conditions of 2000 rpm × 60 seconds so as to cover the entire surface of the base material. Heat treatment was performed at 80 ° C. for 2 minutes on a hot plate to form a conductive film having a film thickness of about 30 nm on the substrate to obtain a conductor.
The surface resistance value [Ω / □] of the conductive film was measured by the two-terminal method (distance between electrodes 20 mm) using Hiresta UX-MCP-HT800 (manufactured by Mitsubishi Chemical Analytech Co., Ltd.).
<膜減り試験による評価>
(膜減り量の測定)
化学増幅型電子線レジスト(以下、「レジスト」と略す。)を使用し、レジスト層の膜減り量を以下の手順(1A)〜(8A)で測定した。
(1A)レジスト層の形成:基材として4インチシリコンウエハー上にレジスト0.2μmをスピンコーターにて2000rpm×60秒間の条件で回転塗布した後、ホットプレートにて130℃で90秒間プリベークを行い、溶剤を除去し、基材上にレジスト層を形成した。
(2A)レジスト層の膜厚測定1:基材上に形成されたレジスト層の一部を剥離し、基材面を基準位置として、触針式段差計(Stylus profiler P−16+, KLA−Tencor Corporation製)を用い、初期のレジスト層の膜厚a[nm]を測定した。
(3A)導電膜の形成:レジスト層上に導電性組成物2mLを滴下し、レジスト層の表面全体を覆うように、スピンコーターにて2000rpm×60秒間の条件で回転塗布した後、ホットプレートにて80℃で2分間プリベークを行い、溶剤を除去し、レジスト層上に膜厚約30nmの導電膜を形成した。
(4A)PEB処理:導電膜とレジスト層が積層した基材を空気雰囲気下、ホットプレートにて120℃×20分加熱し、この状態の基材を空気中、常温(25℃)で90秒静置した。
(5A)水洗:導電膜を20mLの水で洗い流した後、スピンコーターにて2000rpm×60秒間で回転させ、レジスト層の表面の水を除去した。
(6A)現像:2.38質量%テトラメチルアンモニウムハドロオキサイド(TMAH)水溶液からなる現像液20mLをレジスト層の表面に滴下した。60秒静置した後、スピンコーターにて2000rpm×60秒間で回転させ、レジスト層の表面の現像液を除去し、引き続き60秒間回転を維持して乾燥した。
(7A)レジスト層の膜厚測定2:前記(2A)においてレジスト層を一部剥離した部分から5mm以内におけるレジスト層の一部を剥離した後、触針式段差計を用いて現像後のレジスト層の膜厚b[nm]を測定した。
(8A)膜減り量の算出:上記膜厚aの値から膜厚bの値を差し引いて、レジスト層の膜減り量c[nm](c=a−b)を算出した。
<Evaluation by film reduction test>
(Measurement of film loss)
Using a chemically amplified electron beam resist (hereinafter, abbreviated as "resist"), the amount of film loss of the resist layer was measured by the following procedures (1A) to (8A).
(1A) Formation of resist layer: 0.2 μm of resist was spin-coated on a 4-inch silicon wafer as a base material with a spin coater under the condition of 2000 rpm × 60 seconds, and then prebaked at 130 ° C. for 90 seconds on a hot plate. , The solvent was removed and a resist layer was formed on the substrate.
(2A) Film thickness measurement of resist layer 1: Part of the resist layer formed on the substrate is peeled off, and the stylus profilometer P-16 +, KLA-Tencor with the substrate surface as the reference position. The film thickness a [nm] of the initial resist layer was measured using (manufactured by Corporation).
(3A) Formation of film thickness: 2 mL of the conductive composition was dropped onto the resist layer, and the mixture was rotationally coated on a hot plate with a spin coater under the conditions of 2000 rpm × 60 seconds so as to cover the entire surface of the resist layer. The mixture was prebaked at 80 ° C. for 2 minutes to remove the solvent, and a conductive film having a film thickness of about 30 nm was formed on the resist layer.
(4A) PEB treatment: A substrate in which a conductive film and a resist layer are laminated is heated on a hot plate at 120 ° C. for 20 minutes in an air atmosphere, and the substrate in this state is heated in air at room temperature (25 ° C.) for 90 seconds. It was left still.
(5A) Washing with water: After rinsing the conductive film with 20 mL of water, the conductive film was rotated at 2000 rpm × 60 seconds with a spin coater to remove water on the surface of the resist layer.
(6A) Development: 20 mL of a developing solution consisting of a 2.38 mass% tetramethylammonium hadrooxide (TMAH) aqueous solution was added dropwise to the surface of the resist layer. After allowing to stand for 60 seconds, the mixture was rotated at 2000 rpm × 60 seconds with a spin coater to remove the developer on the surface of the resist layer, and the rotation was continued for 60 seconds to dry.
(7A) Measurement of resist layer film thickness 2: After peeling a part of the resist layer within 5 mm from the part where the resist layer was partially peeled in the above (2A), the resist after development using a stylus type step meter. The film thickness b [nm] of the layer was measured.
(8A) Calculation of film thickness reduction amount: The film thickness b value was subtracted from the film thickness a value to calculate the film thickness reduction amount c [nm] (c = ab) of the resist layer.
(基準膜減り量の測定)
レジスト層は、レジスト層形成後の保管期間によって個々のレジストに特有の膜減り量(以下、「基準膜減り量」という。)d[nm]が存在する。導電膜に起因しないこの基準膜減り量dを以下の手順(1B)〜(6B)で測定した。
(1B)レジスト層の形成:前記(1A)と同様にして、基材上にレジスト層を形成した。
(2B)レジスト層の膜厚測定1:前記(2A)と同様にして、初期のレジスト層の膜厚a[nm]を測定した。
(3B)PEB処理:レジスト層が積層した基材を用いた以外は、前記(4A)と同様にしてベーク処理した。
(4B)現像:前記(6A)と同様にして、現像を行った。
(5B)レジスト層の膜厚測定2:前記(2B)においてレジスト層を剥離した部分から5mm以内におけるレジスト層の一部を剥離した後、触針式段差計を用いて現像後のレジスト層の膜厚e[nm]を測定した。
(6B)膜減り量の算出:上記膜厚aの値から膜厚eの値を差し引いて、レジスト層の基準膜減り量d(d=a−e)を算出した。
なお、レジスト層の基準膜減り量dは、3nmであった。
(Measurement of reference film loss)
The resist layer has a film loss amount (hereinafter, referred to as “reference film loss amount”) d [nm] peculiar to each resist depending on the storage period after the resist layer is formed. This reference film loss amount d not caused by the conductive film was measured by the following procedures (1B) to (6B).
(1B) Formation of resist layer: A resist layer was formed on the substrate in the same manner as in (1A) above.
(2B) Measurement of film thickness of resist layer 1: The film thickness a [nm] of the initial resist layer was measured in the same manner as in (2A) above.
(3B) PEB treatment: The baking treatment was carried out in the same manner as in (4A) above, except that a base material having a laminated resist layer was used.
(4B) Development: Development was performed in the same manner as in (6A) above.
(5B) Measurement of resist layer film thickness 2: After peeling a part of the resist layer within 5 mm from the part where the resist layer was peeled in the above (2B), the resist layer after development using a stylus type step meter is used. The film thickness e [nm] was measured.
(6B) Calculation of film thickness reduction amount: The reference film thickness reduction amount d (d = a-e) of the resist layer was calculated by subtracting the value of the film thickness e from the value of the film thickness a.
The reference film loss amount d of the resist layer was 3 nm.
(導電膜中の成分が原因となるレジスト層の膜減り量の算出)
上記レジスト層の膜減り量cの値からレジスト層の基準膜減り量dの値を差し引いて、導電膜からレジスト層へ移行した、溶融した添加剤が原因となるレジスト層の膜減り量f[nm](f=c−d)を算出し、以下の評価基準にて評価した。膜減り量fが少ないほど好ましい。
A:膜減り量fが5nm未満である。
B:膜減り量fが5nm以上、20nm未満である。
C:膜減り量fが20nm以上である。
(Calculation of the amount of film loss of the resist layer caused by the components in the conductive film)
By subtracting the value of the reference film loss d of the resist layer from the value of the film loss c of the resist layer, the film loss f of the resist layer caused by the molten additive transferred from the conductive film to the resist layer [ nm] (f = cd) was calculated and evaluated according to the following evaluation criteria. The smaller the amount of film loss f, the more preferable.
A: The amount of film loss f is less than 5 nm.
B: The amount of film loss f is 5 nm or more and less than 20 nm.
C: The amount of film loss f is 20 nm or more.
[導電性ポリマー(A)]
<導電性ポリマー(A1)の製造>
2−アミノアニソール−4−スルホン酸100mmolに、ピリジン100mmolと水100mLを添加して、モノマー溶液を得た。
得られたモノマー溶液に、ペルオキソ二硫酸アンモニウム100mmolの水溶液(酸化剤溶液)を10℃で滴下した。滴下終了後、25℃で15時間さらに攪拌した後、35℃まで昇温してさらに2時間撹拌して、反応生成物が沈殿した反応液を得た(重合工程)。
得られた反応液を遠心濾過器にて濾過し、沈殿物(反応生成物)を回収して、1Lのメタノールにて反応生成物を洗浄した後に乾燥させ、粉末状の導電性ポリマー(A1)を得た(精製工程)。
[Conductive polymer (A)]
<Manufacturing of conductive polymer (A1)>
To 100 mmol of 2-aminoanisole-4-sulfonic acid, 100 mmol of pyridine and 100 mL of water were added to obtain a monomer solution.
An aqueous solution of 100 mmol of ammonium peroxodisulfate (oxidizing agent solution) was added dropwise to the obtained monomer solution at 10 ° C. After completion of the dropping, the mixture was further stirred at 25 ° C. for 15 hours, then heated to 35 ° C. and further stirred for 2 hours to obtain a reaction solution in which the reaction product was precipitated (polymerization step).
The obtained reaction solution is filtered through a centrifugal filter, the precipitate (reaction product) is collected, the reaction product is washed with 1 L of methanol, and then dried to obtain a powdery conductive polymer (A1). Was obtained (purification step).
[塩基性化合物以外の添加剤(C)]
<添加剤(C1)〜(C3)>
添加剤(C1)として、完全けん化型ポリビニルアルコール(株式会社クラレ製、「PVA−103」、融点150〜230℃)を用いた。
添加剤(C2)として、ポリオキシエチレンラウリルエーテル(花王株式会社製、「エマルゲン 130K」、融点37℃)を用いた。
添加剤(C3)として、ラウリン酸ソルビタン(花王株式会社製、「レオドールSP−10」)、融点13℃)を用いた。
なお、添加剤(C1)〜(C3)の融点は、カタログ値である。
[Additives other than basic compounds (C)]
<Additives (C1) to (C3)>
As the additive (C1), a completely saponified polyvinyl alcohol (manufactured by Kuraray Co., Ltd., "PVA-103", melting point 150 to 230 ° C.) was used.
As the additive (C2), polyoxyethylene lauryl ether (manufactured by Kao Corporation, "Emargen 130K", melting point 37 ° C.) was used.
As the additive (C3), sorbitan laurate (manufactured by Kao Corporation, “Leodor SP-10”), melting point 13 ° C.) was used.
The melting points of the additives (C1) to (C3) are catalog values.
[例1]
導電性ポリマー(A1)1.9質量部と、溶剤(B)として水94.0質量部及びイソプロピルアルコール(IPA)4.0質量部と、添加剤(C1)0.1質量部とを混合し、導電性組成物を得た。
得られた導電性組成物について、導電性を評価し、膜減り試験を行った。これらの結果を表1に示す。
[Example 1]
A mixture of 1.9 parts by mass of the conductive polymer (A1), 94.0 parts by mass of water and 4.0 parts by mass of isopropyl alcohol (IPA) as the solvent (B), and 0.1 parts by mass of the additive (C1). A conductive composition was obtained.
The obtained conductive composition was evaluated for conductivity and subjected to a film loss test. These results are shown in Table 1.
[例2]
導電性ポリマー(A1)1.9質量部と、溶剤(B)として水94.0質量部及びイソプロピルアルコール(IPA)4.0質量部と、添加剤(C2)0.1質量部とを混合し、導電性組成物を得た。
得られた導電性組成物について、導電性を評価し、膜減り試験を行った。これらの結果を表1に示す。
[Example 2]
A mixture of 1.9 parts by mass of the conductive polymer (A1), 94.0 parts by mass of water and 4.0 parts by mass of isopropyl alcohol (IPA) as the solvent (B), and 0.1 parts by mass of the additive (C2). A conductive composition was obtained.
The obtained conductive composition was evaluated for conductivity and subjected to a film loss test. These results are shown in Table 1.
[例3]
導電性ポリマー(A1)1.9質量部と、溶剤(B)として水94.0質量部及びイソプロピルアルコール(IPA)4.0質量部と、添加剤(C3)0.1質量部とを混合し、導電性組成物を得た。
得られた導電性組成物について、導電性を評価し、膜減り試験を行った。これらの結果を表1に示す。
[Example 3]
A mixture of 1.9 parts by mass of the conductive polymer (A1), 94.0 parts by mass of water and 4.0 parts by mass of isopropyl alcohol (IPA) as the solvent (B), and 0.1 parts by mass of the additive (C3). A conductive composition was obtained.
The obtained conductive composition was evaluated for conductivity and subjected to a film loss test. These results are shown in Table 1.
表1から明らかなように、融点が60℃以上の添加剤(C1)を用いた例1は、融点が60℃未満の添加剤(C2)、(C3)を用いた例2、3に比べて膜減り量が少なかった。 As is clear from Table 1, Example 1 using the additive (C1) having a melting point of 60 ° C. or higher is compared with Examples 2 and 3 using the additives (C2) and (C3) having a melting point of less than 60 ° C. The amount of film loss was small.
本発明の導電性組成物はレジスト層への影響が少ない導電膜を形成でき、荷電粒子線描画時の帯電防止用として有用である。 The conductive composition of the present invention can form a conductive film having little influence on the resist layer, and is useful as an antistatic material when drawing a charged particle beam.
Claims (2)
前記添加剤の融点が60℃以上である、導電性組成物。 A conductive composition containing a conductive polymer having an acidic group, a solvent, and an additive other than a basic compound.
A conductive composition having a melting point of 60 ° C. or higher for the additive.
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WO2015060231A1 (en) * | 2013-10-21 | 2015-04-30 | 三菱レイヨン株式会社 | Electrically conductive composition, electrical conductor, electrical conductor formation method, and production method for polymer |
WO2015174453A1 (en) * | 2014-05-14 | 2015-11-19 | 三菱レイヨン株式会社 | Conductive composition, antistatic film, laminate and production therefor, and production method for photomask |
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JP2010018673A (en) * | 2008-07-09 | 2010-01-28 | Mitsubishi Rayon Co Ltd | Conductive composition and conductor |
WO2015060231A1 (en) * | 2013-10-21 | 2015-04-30 | 三菱レイヨン株式会社 | Electrically conductive composition, electrical conductor, electrical conductor formation method, and production method for polymer |
WO2015174453A1 (en) * | 2014-05-14 | 2015-11-19 | 三菱レイヨン株式会社 | Conductive composition, antistatic film, laminate and production therefor, and production method for photomask |
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株式会社クラレ, エクセバール, JPN6022044193, ISSN: 0005038173 * |
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