JP2020144363A - Optical member or light-emitting device - Google Patents

Abstract

To provide an optical member that acts as appropriate.SOLUTION: An optical member includes an upper surface and a lower surface, and also includes a wavelength conversion member 90 including a wavelength conversion unit and a surrounding part that surrounds a side surface of the wavelength conversion unit, and a light-transmitting member 80 that is bonded to a lower surface of the surrounding part and covers the wavelength conversion unit in a bottom view. The light-transmitting member 80 includes a first bonding part 83 that surrounds the periphery of the wavelength conversion unit and has an opening formed in a part in a top view where the light-transmitting member 80 is bonded to the surrounding part, and a second bonding part 84 that surrounds the periphery of the first bonding part 83 and has an opening formed in a part in a region excluding a line extending from a region inside the first bonding part 83 to an external region through the opening.SELECTED DRAWING: Figure 10

Description

The present invention relates to an optical member or a light emitting device having an optical member.

The semiconductor laser element can emit a high-power laser beam. The laser beam is used for various purposes. For example, when the laser beam is used, consideration for safety may be required.

According to Patent Document 1, in a semiconductor light emitting device having a semiconductor laser element and a wavelength conversion member, a conductive film is formed in a region other than the incident region of the laser beam of the wavelength conversion member, and wavelength conversion is detected by detecting a breakage of the conductive film. A technique for detecting an abnormality such as a detachment of a member is disclosed. As described above, in the light emitting device in which the light from the light emitting element is controlled by the optical system and emitted to the outside, measures are taken for the optical system to operate appropriately.

JP 2016-122715

However, the form of the optical member that controls the optical system is not limited to that of Patent Document 1, and there is room for improvement in the configuration or structure for the optical member to operate appropriately.

The optical member disclosed in the present specification is an optical member having an upper surface and a lower surface, and is a wavelength conversion member having a wavelength conversion unit, a surrounding portion surrounding the side surface of the wavelength conversion unit, and the surrounding portion. A translucent member that is joined to the lower surface and covers the wavelength conversion portion in a bottom view is provided, and the translucent member surrounds the wavelength conversion portion on the upper surface to be joined to the surrounding portion. , A region that surrounds the first joint with a partial opening and does not include a straight line that goes from the inner region of the first joint through the opening to the outer region. Includes a second joint with an opening in part.

The optical member disclosed in the present specification is an optical member having an upper surface and a lower surface, and on the lower surface, a protected target member having a protected region, an outer peripheral region of the protected region, and a lower surface of the outer peripheral region. The translucent member comprises a translucent member which is joined and covers the protected area in a bottom view, and the translucent member surrounds and partially surrounds the light incident region on the upper surface to be joined to the outer peripheral region. A region that surrounds the first intrusion protection portion having an opening in the first intrusion protection portion and does not include a straight line that advances from the inner region of the first intrusion protection portion to the outer region through the opening. Including a second intrusion protection unit having an opening in a part thereof.

Further, the light emitting device disclosed in the present specification includes a base having a bottom surface and a frame surrounding the bottom surface, a semiconductor laser element arranged on the bottom surface, and an upper surface of the base portion inside the frame. A translucent member that joins with the first upper surface between the bottom surface and seals the space where the semiconductor laser element is arranged, and the light emitted from the semiconductor laser element is converted into light having a different wavelength. A wavelength conversion member having a possible wavelength conversion unit and a surrounding portion surrounding the side surface of the wavelength conversion unit, and joining the translucent member in the surrounding portion, and the translucent member to which the wavelength conversion member is bonded. A first joint portion having a resin member provided on the sex member, surrounding the wavelength conversion portion, and having an opening in a part thereof, and surrounding the first joint portion, and The translucent member and the translucent member, the translucent member, via a second joint portion having an opening partially provided in a region not including a straight line traveling from the inner region of the first joint portion to the outer region through the opening. It joins with the wavelength conversion member.

Further, the light emitting device disclosed in the present specification includes a base having a bottom surface and a frame surrounding the bottom surface, a semiconductor laser element arranged on the bottom surface, and an upper surface of the base portion inside the frame. A translucent member that joins with the first upper surface between the bottom surface and seals the space where the semiconductor laser element is arranged, and on the lower surface, a light incident region and an outer peripheral region of the light incident region. A wavelength conversion member that has, and is bonded to the translucent member in the outer peripheral region, and a resin member that is provided on the translucent member to which the wavelength conversion member is bonded. A first joint that surrounds the incident region and is partially provided with an opening, and a region that surrounds the first joint and passes through the opening from the inner region of the first joint to the outer region. The translucent member and the wavelength conversion member are joined via a second joint portion that is partially provided with an opening in a region that does not include a straight line leading to.

According to the invention disclosed in accordance with the present specification, it is possible to provide an optical member that works appropriately. Further, it is possible to realize a light emitting device on which such an optical member is mounted.

FIG. 1 is a perspective view of a light emitting device according to an embodiment. FIG. 2 is a top view corresponding to FIG. FIG. 3 is a cross-sectional view of the light emitting device in line III-III of FIG. FIG. 4 is a perspective view for explaining the internal structure of the light emitting device according to the embodiment. FIG. 5 is a top view corresponding to FIG. FIG. 6 is a perspective view for explaining the internal structure of the light emitting device according to the embodiment. FIG. 7 is a top view corresponding to FIG. FIG. 8 is a perspective view of a state in which the translucent member and the wavelength conversion member according to the embodiment are joined. FIG. 9 is a top view corresponding to FIG. FIG. 10 is a top view through which the wavelength conversion member is transmitted in order to explain the joint surface between the translucent member and the wavelength conversion member according to the embodiment. FIG. 11 is a top view of the translucent member according to the embodiment. FIG. 12 is a bottom view of the wavelength conversion member according to the embodiment. FIG. 13 is a top view illustrating another example of the translucent member according to the embodiment. FIG. 14 is a top view illustrating another example of the translucent member according to the embodiment. FIG. 15 is a top view illustrating another example of the translucent member according to the embodiment.

Within the scope of this specification or claims, polygons such as triangles and quadrangles are referred to as polygons, including shapes in which the corners of the polygon are rounded, chamfered, chamfered, rounded, etc. It shall be called. Further, not only the corner (edge of the side) but also the shape in which the middle part of the side is processed is also referred to as a polygon. That is, the shape processed based on the polygon is included in the interpretation of the "polygon" described in the present specification and the claims.

The same applies not only to polygons but also to words representing specific shapes such as trapezoids, circles, and irregularities. The same applies when dealing with each side forming the shape. In other words, even if the corners and intermediate parts of a certain side are processed, the interpretation of "side" includes the processed part. When indicating a "polygon" or "side" that has not been intentionally added in this way, "strict" shall be added and, for example, "strict quadrangle" shall be described. ..

Further, within the scope of the present specification or claims, there are a plurality of components corresponding to a certain component, and when each of them is expressed separately, "first" and "second" are added to the head of the component. It may be distinguished by adding. At this time, if the objects and viewpoints to be distinguished between the present specification and the claims are different, the additional aspects in the present specification and the additional aspects in the claims may not match.

Hereinafter, a mode for carrying out the present description will be described with reference to the drawings. However, although the form shown embodies the technical idea of the present invention, it does not limit the present invention. Further, in the following description, members having the same or the same quality are shown with the same name and reference numeral, and duplicate description may be omitted as appropriate. The size and positional relationship of the members shown in each drawing may be exaggerated to clarify the explanation.

<Embodiment>
FIG. 1 is a perspective view of the light emitting device 1 according to the embodiment. FIG. 2 is a top view of the light emitting device 1. FIG. 3 is a cross-sectional view of the light emitting device 1 in line III-III of FIG. FIG. 4 is a perspective view showing a state in which the resin member 100 is removed from the light emitting device 1 in order to explain the internal structure. FIG. 5 is a top view in the same state as in FIG. FIG. 6 is a perspective view showing a state in which the translucent member 80 and the wavelength conversion member 90 are further removed from the light emitting device 1 in order to explain the internal structure. FIG. 7 is a top view in the same state as in FIG. FIG. 8 is a perspective view of a state in which the translucent member 80 and the wavelength conversion member 90 are joined. FIG. 9 is a top view in the same state as in FIG. FIG. 10 is a top view through which the wavelength conversion member 90 is transmitted to explain the joint surface between the translucent member 80 and the wavelength conversion member 90. In FIG. 10, the first joint portion 83 and the second joint portion 84 of the translucent member 80 and the conductive film 921 of the wavelength conversion member 90 are shown by hatching. The fine hatching is the conductive film 921. FIG. 11 is a top view of the translucent member 80 according to the embodiment. FIG. 12 is a bottom view of the wavelength conversion member 90 according to the embodiment.

The light emitting device 1 has, as constituent elements, a base 10, two semiconductor laser elements 20, two submounts 30, two light reflecting members 40, a protective element 50, a temperature measuring element 60, a wiring 70, a translucent member 80, and the like. It has a wavelength conversion member 90 and a resin member 100.

(Base 10)
The base 10 has a concave shape recessed from the upper surface to the lower surface. Further, the outer shape is rectangular in the top view, and the recess is formed inside the outer shape. The base portion 10 has an upper surface 11, a lower surface 12, a lower surface 13, an inner side surface 14, and an outer surface 15, and the inner side surface 14 and the bottom surface 12 form a recessed space. Further, in top view, a frame is formed by the upper surface 11, and the recessed space is surrounded by this frame.

Further, the base portion 10 forms two stepped portions 16 inside the frame. Here, the step portion 16 refers to a portion composed of an upper surface and a side surface that intersects the upper surface and advances downward. Therefore, the inner side surface 14 of the base portion 10 includes a side surface intersecting with the upper surface 11 of the base portion 10 and a side surface of the step portion.

Here, the two stepped portions 16 are referred to as a first stepped portion 161 and a second stepped portion 162 from the side closer to the bottom surface 12. The base portion 10 does not have to have the two stepped portions 16. For example, there may be one step portion 16.

The intersection of faces can be identified from the drawing. For example, it can be said that the outer surface 15 intersects the upper surface 11 and the lower surface 13. Further, for example, it can be said that the upper surface of the first step portion 161 intersects the side surface of the second step portion 162 in a part and intersects the side surface intersecting the upper surface 11 in another part as a side surface extending upward from the upper surface. The same applies to the intersection of sides.

The base 10 can be formed using ceramic as the main material. For example, aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide can be used as the ceramic. Not limited to ceramics, other materials having insulating properties may be used as the main material.

Further, five metal films are provided on the bottom surface 12 of the base portion 10, two are provided on the upper surface of the second step portion 162, and six metal films are provided on the upper surface 11. Further, each of the four metal films on the bottom surface 12 and the two metal films on the upper surface of the second step portion 162 are provided on the upper surface 11 via the metal passing through the inside of the base portion 10. Connect with any of. A metal film is also provided on the upper surface of the first step portion 161.

The area (place) and the number of metal films provided are not limited to this. The number of metal films provided on the upper surface 11 and the bottom surface 12 may be changed. For example, it may be provided on the lower surface 13 instead of the upper surface 11. In the light emitting device 1, it can be said that a plurality of metal films are provided on the bottom surface 12 of the base portion 10, the upper surface of the second step portion 162, and the upper surface 11 of the base portion 10.

(Semiconductor laser element 20)
The semiconductor laser device 20 has a rectangular outer shape when viewed from above. Further, the side surface that intersects with one of the two short sides of the rectangle becomes the emission end surface of the light emitted from the semiconductor laser element 20. Further, the upper surface and the lower surface of the semiconductor laser element 20 have a larger area than the emission end surface.

The light (laser light) emitted from the semiconductor laser element has a spread and forms an elliptical farfield pattern (hereinafter referred to as "FFP") on a surface parallel to the emission end surface of the light. Here, FFP indicates the shape and light intensity distribution of the emitted light at a position away from the emitting end face.

The shape of the FFP of the light emitted from the semiconductor laser element 20 is an elliptical shape in which the stacking direction perpendicular to the layer direction of the plurality of semiconductor layers including the active layer is longer than the layer direction. This layer direction is referred to as the horizontal direction of FFP, and the stacking direction is referred to as the vertical direction of FFP.

Further, light having an intensity of 1 / e ² or more with respect to the peak intensity value based on the light intensity distribution of the FFP of the semiconductor laser element 20 is referred to as light of the main portion. Further, the angle corresponding to the full width at half maximum of this light intensity distribution is referred to as an expansion angle. The vertical spread angle of FFP is referred to as the vertical spread angle, and the horizontal spread angle of FFP is referred to as the horizontal spread angle.

As the semiconductor laser device 20, one having an emission peak wavelength in the range of 320 nm to 530 nm, typically 430 nm to 480 nm can be used. Examples of such a semiconductor laser device include a semiconductor laser device containing a nitride semiconductor. As the nitride semiconductor, for example, GaN, InGaN, and AlGaN can be used.

(Sub mount 30)
The submount 30 is configured in the shape of a rectangular parallelepiped and has a lower surface, an upper surface, and side surfaces. Further, the sub mount 30 has the smallest width in the vertical direction. The shape is not limited to a rectangular parallelepiped. The submount 30 is formed using, for example, silicon nitride, aluminum nitride, or silicon carbide. In addition, other materials may be used. Further, a metal film is provided on the upper surface of the sub mount 30.

(Light Reflecting Member 40)
The light reflecting member 40 has two light reflecting surfaces 41 that reflect light. The light reflecting surface is provided with, for example, a surface having a light reflectance of 99% or more with respect to the peak wavelength of the irradiated light. The light reflectance here can be 100% or less or less than 100%.

The two light reflecting surfaces 41 have a planar shape and are inclined with respect to the lower surface, and the inclination angles with respect to the lower surface are different from each other. That is, neither of the two light reflecting surfaces 41 has a vertical or parallel arrangement with respect to the lower surface. Further, the two light reflecting surfaces 41 are continuously connected to form one integrated reflecting region.

Here, the light reflecting surface closer to the lower surface is referred to as the first reflecting surface 411, and the light reflecting surface farther away is referred to as the second reflecting surface 412. In the light reflecting member 40, the inclination angle of the second reflecting surface 412 is larger than the inclination angle of the first reflecting surface 411. For example, the difference in inclination angle between the first reflecting surface 411 and the second reflecting surface 412 is in the range of 10 degrees or more and 60 degrees or less.

It should be noted that it may have three or more light reflecting surfaces 41 forming an integral one reflecting region. Further, one light reflecting surface 41 may form one reflecting region. Further, it may further have a light reflecting surface that is not continuously connected to another light reflecting surface. Further, the shape of the light reflecting surface 41 may be a curved surface shape instead of a planar shape.

The light reflecting member 40 can use glass, metal, or the like as the main material for forming its outer shape. The main material is preferably a heat-resistant material, and for example, glass such as quartz or BK7 (borosilicate glass), metal such as aluminum, or Si can be used. Further, the light reflecting surface may be formed by using, for example, a metal such as Ag or Al or a dielectric multilayer film such as Ta ₂ O ₅ / SiO ₂ , TIO ₂ / SiO ₂ , or Nb ₂ O ₅ / SiO _2. it can.

(Protective element 50)
The protective element 50 is for preventing an excessive current from flowing to a specific element (for example, a semiconductor laser element) and destroying the element. As the protection element 50, for example, a Zener diode made of Si can be used.

(Temperature measuring element 60)
The temperature measuring element 60 is an element used as a temperature sensor for measuring the ambient temperature. As the temperature measuring element 60, for example, a thermistor can be used.

(Wiring 70)
The wiring 70 is used for electrical connection of a specific element (for example, a semiconductor laser element). As the wiring 70, for example, a metal wire can be used.

(Translucent member 80)
The translucent member 80 is formed of a rectangular parallelepiped flat plate shape, and has a lower surface, an upper surface, and a side surface. The translucent member has a translucent property that transmits light. Here, the translucency means that the transmittance with respect to light is 80% or more. The shape is not limited to a rectangular parallelepiped.

The translucent member 80 can be formed by using sapphire as a main material. Sapphire is a material with a relatively high refractive index and relatively high strength. In addition to sapphire, for example, quartz, silicon carbide, glass, or the like can be used as the main material.

On the upper surface of the translucent member 80, two metal films provided in the outer peripheral region for wiring are provided. Hereinafter, these two metal films will be referred to as a first wiring pattern 81 and a second wiring pattern 82, respectively.

Further, a metal film is also provided on the lower surface of the translucent member 80 in the outer peripheral region, and this metal film is used for joining with other components. Therefore, the translucent member 80 has a region having translucency and a region not having translucency in top view or bottom view. In addition, a translucent region is provided in the central portion.

Further, two linear metal films for joining are provided on the upper surface of the central portion. Hereinafter, these two metal films will be referred to as a first joint portion 83 and a second joint portion 84, respectively. A metal film is provided in a C shape so as to surround the center of the first joint portion 83. The second joint portion 84 is provided with a C-shaped metal film so as to surround the first joint portion 83. That is, the first joint portion 83 and the second joint portion 84 are partially provided with openings.

The direction of the opening provided by the first joint 83 and the direction of the opening provided by the second joint 84 are different. When the opening made by the first joint portion 83 is opened toward one side of the rectangular outer shape in a top view, the opening made by the second joint portion 84 is directed toward a side different from this side. It is open. In the light emitting device 1, one side of the first joint 83 facing the opening intersects with one side of the second joint 84 facing the opening.

Further, the opening made by the second joint portion 84 includes a straight line that surrounds the first joint portion 83 in a top view and proceeds from the inner region of the first joint portion 83 to the outer region through the opening. Provided in no area. In FIG. 11, the fine hatched region shown in a part of the second joint portion 84 indicates a region including a straight line extending from the inner region of the first joint portion 83 to the outer region through the opening. Further, the broken lines L1 and L2 are boundaries of straight lines extending from the inner region of the first joint portion 83 to the outer region through the opening. In the example of FIG. 11, the opening by the second joint portion 84 is not provided in the fine hatched region.

The joint region formed by the first joint portion 83 has a C-shaped surrounding region surrounding the center and a connecting region connected to the first wiring pattern 81. The connecting region of the first joint 83 has a region extending outward from the middle of the C-shape of the surrounding region. Further, in this connection region, the first joint portion 83 and the first wiring pattern 81 overlap each other.

Further, the first wiring pattern 81 is connected from the outside of the second joint portion 84 to the first joint portion 83 through the opening of the second joint portion 84. Therefore, the first joint portion 83 and the first wiring pattern 81 are connected through the opening of the second joint portion 84.

The joint region formed by the second joint portion 84 has a C-shaped surrounding region that surrounds the first joint portion 83 and a connection region that connects to the second wiring pattern 82. The connecting region of the second junction 84 includes a C-shaped portion of the surrounding region. That is, in the second joint portion 84, the surrounding region has a part or all of the connecting region. A connecting area may be provided so that a part or all of the connecting area is not included in the C-shape of the surrounding area. Further, in this connection region, the second joint portion 84 and the second wiring pattern 82 overlap each other.

Further, the second joint portion 84 is surrounded by the second wiring pattern 82 on the outside of the C-shaped metal film (surrounding region) except for a part or all of the opening. Therefore, the second wiring pattern 82 is connected from the outside of the second joint portion 84 (surrounding region) to the second joint portion 84 (connection region).

The first wiring pattern 81 and the second wiring pattern can be formed by using, for example, Ti / Pt / Au (ti, Pt, and Au are laminated in this order from the upper surface of the submount 30). Further, the first joint portion 83 and the second joint portion 84 can be formed by using, for example, AuSn.

(Wavelength conversion member 90)
The wavelength conversion member 90 is formed of a rectangular parallelepiped flat plate shape, and has a lower surface, an upper surface, and a side surface. Further, the wavelength conversion member 90 has a translucent wavelength conversion unit 91 and a surrounding unit 92. Further, the wavelength conversion unit 91 and the surrounding unit 92 are integrally formed. The inner surface of the surrounding portion 92 is in contact with the side surface of the wavelength conversion unit 91, and the outer surface of the surrounding portion 92 corresponds to the side surface of the wavelength conversion member 90.

The wavelength conversion unit 91 has a rectangular parallelepiped shape. Further, the wavelength conversion unit 91 is a member capable of converting the light incident on the wavelength conversion unit 91 into light having a different wavelength. The wavelength conversion member 90 can be formed by using an inorganic material that is not easily decomposed by light irradiation as a main material. It does not have to be an inorganic material.

Further, the wavelength conversion unit 91 can be formed by using ceramics as a main material and containing a phosphor. Not limited to this, glass may be used as a main material, or a single crystal of a phosphor may be formed. It is preferable to use a material having a melting point of 1300 ° C. to 2500 ° C. as the main material for the wavelength conversion unit 91, and by doing so, even if the heat applied to the wavelength conversion unit 91 is taken into consideration, deformation or discoloration may occur. Deterioration is unlikely to occur.

For example, when ceramics is used as the main material of the wavelength conversion unit 91, it can be formed by sintering a phosphor and a translucent material such as aluminum oxide. The content of the phosphor can be 0.05% by volume to 50% by volume with respect to the total volume of the ceramics. Further, for example, ceramics obtained by sintering a powder of a phosphor and substantially consisting of only the phosphor may be used.

Fluorescent materials include cerium-activated yttrium aluminum garnet (YAG), cerium-activated lutetium aluminum garnet (LAG), europium and / or chromium-activated nitrogen-containing calcium aluminosilicate (CaO-). Examples thereof include Al ₂ O _3- SiO ₂ ), europium-activated silicate ((Sr, Ba) ₂ SiO ₄ ), α-sialone phosphor, β-sialon phosphor and the like. Of these, it is preferable to use a YAG phosphor, which is a phosphor having good heat resistance.

The surrounding portion 92 has a shape having a through hole in the central portion of a rectangular parallelepiped flat plate. A wavelength conversion unit 91 is provided in the region of the through hole. Further, the shape of the through hole corresponds to the shape of the wavelength conversion unit 91, and the surrounding portion 92 surrounds the side surface of the wavelength conversion unit 91.

The surrounding portion 92 can be formed by using ceramics as a main material. Further, the present invention is not limited to this, and a metal or a composite of ceramics and metal may be used. Further, it is preferable to use a material having a high thermal conductivity for exhausting the heat generated by the wavelength conversion unit 91 for the surrounding portion 92. The surrounding portion 92, in which a material having high thermal conductivity is used as the main material, has a heat radiating function for exhausting heat in the wavelength conversion unit 91, and from this viewpoint, it can be regarded as a heat radiating member instead of the surrounding portion 92.

Further, it is preferable to use a material for the surrounding portion 92 that reflects the light emitted by the semiconductor laser element 20 and the fluorescence emitted by the phosphor with high reflectance. Further, it is preferable to reflect light at least in a region surrounding the side surface of the wavelength conversion unit 91. The surrounding portion 92 in which a material having a high reflectance is used as the main material has high reflectivity for reflecting the irradiated light, and from this viewpoint, the surrounding portion 92 can be regarded as a light reflecting member. Examples of the material having high reflectance and high thermal conductivity include alumina (Al ₂ O ₃ ).

A conductive film 921 is provided on the lower surface of the surrounding portion 92. The conductive film 921 is provided at a position close to the wavelength conversion unit 91. Further, a linear conductive film 921 is provided so as to surround (cover) the wavelength conversion unit 91 in a bottom view.

It is preferable that the conductive film has a thin linear shape and surrounds the wavelength conversion unit 91. The thin linear shape means, for example, a linear shape in which the line width is smaller than the width of the wavelength conversion unit 91 and the length of the line is longer than the outer circumference of the wavelength conversion unit 91 in the bottom view. Further, for example, the line width may be 1/2 or less of the width of the wavelength conversion unit 91. The width of the wavelength conversion unit 91 here is, for example, the width of the short side when the outer shape is rectangular, and the width of the minor diameter when the outer shape is elliptical, for example. Further, in the case of other shapes, the width is substantially specified based on these examples.

Further, on the lower surface of the surrounding portion 92, a plurality of metal films are provided on the outside of the wavelength conversion portion 91. These metal films can be distinguished by a first metal film 922 that surrounds the wavelength conversion unit 91 and a second metal film 924 that surrounds the first metal film 922.

Furthermore, the first metal film 922 surrounds the wavelength conversion unit 91 with two paired metal films. Each of the plurality of metal films constituting the first metal film 922 shall be referred to as a first metal film part 923. The second metal film 924 surrounds the first metal film 922 by two paired metal films. Each of the plurality of metal films constituting the second metal film 924 shall be referred to as a second metal film part 925. The first metal film 922 or the second metal film 924 may be formed by three or more first metal film parts 923 or the second metal film part 925.

The two first metal film parts 923 are formed so as to sandwich the wavelength conversion unit 91, and provide two openings on the outer periphery of the wavelength conversion unit 91. The two openings are provided at positions facing each other with the wavelength conversion unit 91 interposed therebetween. In addition, one of the two openings is larger than the other.

The two second metal film parts 925 are formed so as to sandwich the first metal film 922, and provide two openings on the outer periphery of the first metal film 922. The two openings are provided at positions facing each other with the first metal film 922 interposed therebetween. One of the two openings is larger than the other.

The direction of the opening provided by the first metal film 922 and the direction of the opening provided by the second metal film 924 are different. In particular, it differs in at least one of the two openings. In particular, the directions of the openings are different between the larger openings of the first metal film 922 and the second metal film 924.

One end of both ends of the linear conductive film 921 is connected to the first metal film 922, and the other end is connected to the second metal film 924. Further, the conductive film 921 passes through one of the two openings provided by the first metal film 922 and is connected to the second metal film 924. The conductive film 921 passes through the larger of the two openings and is connected to the second metal film 924. By connecting through the opening, the connection is more stable than connecting across the first metal film 922.

Further, the conductive film 921 surrounds the wavelength conversion unit 91 between the wavelength conversion unit 91 and the first metal film 922. Therefore, the conductive film 921 has a portion that surrounds the wavelength conversion unit 91 and a portion that passes through the opening and is connected to the second metal film 924, and the first metal film 922 has a portion that passes through the opening and is connected to the second metal film 924. Except for this, the conductive film 921 of the portion surrounding the wavelength conversion unit 91 is surrounded.

The first metal film 922 passes through the opening of one of the two locations provided by the second metal film 924. The opening through which the first metal film 922 passes is the larger of the two openings. The opening of the second metal film 924 through which the first metal film 922 passes is an opening that surrounds the first metal film 922 and through which the conductive film 921 passes from the inner region to the outer region of the first metal film 922. It is provided in an area that does not include a straight line going through.

The conductive film 921 can be formed by using indium tin oxide (ITO). ITO has a high transmittance due to visible light. The conductive film 921 formed of ITO has translucency, and can be regarded as a translucent conductive film from this viewpoint. The first metal film 922 and the second metal film 924 can be formed by using, for example, Ti / Pt / Au.

The wavelength conversion member 90 can be formed by integrally molding, for example, a wavelength conversion unit 91 made of a molded product such as a sintered body and a material of powder particles forming the surrounding portion 92, and sintering and forming the member 90. .. Alternatively, the surrounding portion 92 made of a molded product such as a sintered body and the powder or granular material forming the wavelength conversion portion 91 can be integrally molded and sintered. For sintering, for example, a discharge plasma sintering method (SPS method), a hot press sintering method (HP method), or the like can be used.

(Resin member 100)
The resin member 100 has a shape in which a through hole is formed in the central portion. Further, a convex shape surrounding the through hole is formed on the lower surface side. In other words, a concave shape with a recessed central portion is formed on the lower surface side.

The resin member 100 is formed of a resin having a light-shielding property. Here, the light-shielding property indicates a property of not transmitting light, and the light-shielding property may be realized by utilizing the property of absorbing light, the property of reflecting light, and the like in addition to the property of blocking light. For example, it can be formed by containing a filler such as a light diffusing material and / or a light absorbing material in a resin.

Examples of the resin forming the resin member 100 include epoxy resin, silicone resin, acrylate resin, urethane resin, phenol resin, BT resin and the like. Examples of the light-absorbing filler include dark-colored pigments such as carbon black.

(Light emitting device 1)
Next, the light emitting device 1 manufactured by using these components will be described.
First, two light reflecting members 40 are arranged on the bottom surface 12 of the base 10. The two light reflecting members 40 are arranged on different metal films, and the lower surface thereof is joined to the bottom surface 12 of the base 10. Further, the two light reflecting members 40 are arranged point-symmetrically with respect to the point SP (see FIG. 7). Further, in the two light reflecting members 40, the upper end of the light reflecting surface 41 is parallel or perpendicular to the inner side surface 14 or the outer side surface 15 of the base portion 10 in the top view.

Next, the protective element 50 and the temperature measuring element 60 are arranged on the bottom surface 12 of the base portion 10. The protective element 50 is arranged and joined to a metal film on which one of the two light reflecting members 40 is arranged. The temperature measuring element 60 is arranged and joined on a metal film different from the metal film on which the two light reflecting members 40 are arranged.

Next, two submounts 30 are arranged on the bottom surface 12 of the base 10. The two submounts 30 are arranged on different metal films, the lower surface of which is joined to the bottom surface 12 of the base 10. Further, each of the two submounts 30 is arranged on a metal film on which the light reflecting member 40 is arranged. The submount 30 and the light reflecting member 40 may be arranged on different metal films.

Next, the semiconductor laser element 20 is arranged on the submount 30. The two semiconductor laser elements 20 are arranged on the upper surface of different submounts 30, and the lower surfaces thereof are joined. Further, the two semiconductor laser elements 20 are arranged point-symmetrically with respect to the point SP. That is, the point where the two semiconductor laser elements 20 are symmetrical and the point where the two light reflecting members 40 are symmetrical are at the same position. In the following description, this point SP will be referred to as a point of symmetry.

In the top view of the two semiconductor laser elements 20, the emission end surface is not parallel or perpendicular to the inner surface 14 or the outer surface 15 of the base 10. Therefore, it is not parallel or vertical with the upper end of the light reflecting surface 41. That is, the semiconductor laser element 20 is arranged so that the emission end surface is oblique with respect to the inner side surface 14 and the outer surface 15 of the base portion 10 or the upper end surface of the light reflecting surface 41 in top view.

Instead of arranging the semiconductor laser element 20 diagonally, the light reflecting member 40 may be arranged diagonally. That is, the semiconductor laser element 20 may be arranged parallel or perpendicular to the inner side surface 14 or the outer surface 15 of the base portion 10, and the light reflecting member 40 may be arranged so as not to be parallel and perpendicular to each other.

The light emitted from the emission end face of each of the two semiconductor laser elements 20 irradiates the corresponding light reflecting member 40. The corresponding light reflecting member 40 is a light reflecting member 40 arranged on the same metal film. The semiconductor laser element 20 is arranged so that the light reflecting surface 41 is irradiated with light of at least a main portion.

Further, between the corresponding semiconductor laser element 20 and the light reflecting member 40, the semiconductor laser element 20 is located farther from the point of symmetry than the light reflecting member 40. Therefore, the light emitted from the semiconductor laser element 20 travels in the direction approaching the point of symmetry. At least one of the two semiconductor laser elements 20 is arranged at a position close to the temperature measuring element 60. This is because it is considered that there is no large difference between the temperature of one semiconductor laser device 20 and the temperature of the other semiconductor laser device 20 from the symmetry of the arrangement.

The submount 30 in which the semiconductor laser element 20 is arranged plays a role as a heat radiating member in the light emitting device 1 to release heat generated from the semiconductor laser element 20. In order to make the submount 30 function as a heat radiating member, it may be formed of a material having a higher thermal conductivity than the semiconductor laser element 20. Further, if it is formed of a material having a higher thermal conductivity than the bottom surface of the base, a higher heat dissipation effect can be obtained.

Further, the submount 30 can play a role of adjusting the light emission position of the semiconductor laser element 20 in the light emitting device 1. For example, the submount is used as an adjusting member when it is desired to make the light passing through the optical axis horizontal to the bottom surface 12 and to irradiate a predetermined position on the light reflecting surface 41.

Next, the semiconductor laser element 20, the protection element 50, and the wiring 70 for electrically connecting the temperature measuring element 60 are joined. A metal film provided on the bottom surface 12 of the base 10 is used for electrical connection. The wiring 70 is joined so that the two semiconductor laser elements 20 and the protection element 50 are connected in series. Further, the temperature measuring element 60 is separated from the two semiconductor laser elements 20 and the protective element 50, and is joined so as to be electrically connected.

Next, the translucent member 80 is arranged on the upper surface of the base 10. The lower surface of the translucent member 80 is arranged on the upper surface of the stepped portion 16 of the base portion 10 and joined. More specifically, it is joined to the upper surface of the first step portion 161. A metal film provided on the outer peripheral region of the lower surface of the translucent member 80 and a metal film provided on the upper surface of the first step portion 161 are joined and fixed via Au-Sn or the like.

By joining the translucent member 80 to the base 10, a closed space in which the semiconductor laser element 20 is arranged is formed. As described above, in the light emitting device 1, the translucent member 80 can serve as a lid member. Further, this closed space is formed in an airtightly sealed state. By hermetically sealing, it is possible to suppress the collection of organic substances and the like on the light emitting end face of the semiconductor laser element 20.

Here, the translucent member 80 is joined to the base 10 with the wavelength conversion member 90 bonded to the upper surface. Therefore, the translucent member 80 is arranged on the upper surface of the base 10, and the wavelength conversion member 90 is arranged on the upper surface of the translucent member 80. The light emitted from the two semiconductor laser elements 20, particularly the light of the main portion, is reflected by the light reflecting surface 41 of the corresponding light reflecting member 40, transmitted through the translucent member 80, and is transmitted by the wavelength conversion unit 91. It is incident on the lower surface.

That is, it can be said that the wavelength conversion member 90 has a light incident region in which the light of the main portion is incident and an outer peripheral region thereof on the lower surface thereof. Further, the wavelength conversion unit 91 forms a light incident region, and the surrounding unit 92 forms an outer peripheral region. The outer peripheral region may not be limited to the form formed by the surrounding portion 92. For example, the size of the wavelength conversion unit 91 may be increased, and the lower surface of the wavelength conversion unit 91 may include a light incident region and an outer peripheral region.

Part or all of the light incident on the wavelength conversion unit 91 is converted into light having a different wavelength by the wavelength conversion unit 91. Laser light or wavelength-converted light is emitted from the upper surface of the wavelength conversion unit 91 to the outside of the light emitting device 1. That is, the upper surface of the wavelength conversion unit 91 becomes the light extraction surface of the light emitting device 1.

If the heat generated by the wavelength conversion is concentrated in a specific place, the wavelength conversion unit 91 is likely to deteriorate. Therefore, it is preferable that the distribution of the light incident on the wavelength conversion unit 91 is diffused. For example, it is preferable that the portions having strong light intensity of the laser light emitted from each of the two semiconductor laser elements 20 do not overlap.

In the light emitting device 1, the light reflecting surface 41 of the light reflecting member 40 is composed of a plurality of reflecting surfaces having different inclination angles so that light more uniform than the light intensity distribution of the FFP is incident on the wavelength conversion unit 91. It is controlled to.

Further, the arrangement of the two light reflecting members 40 prevents the light emitted from each semiconductor laser element from passing through the optical axis from passing through the center of the wavelength conversion unit 91. That is, the light emitted from each semiconductor laser element that passes through the optical axis does not overlap on the incident surface (lower surface) of the wavelength conversion unit 91.

The wavelength conversion member 90 is joined to the translucent member 80 by joining the surrounding portion 92 and the translucent member 80. The first metal film 922 of the surrounding portion 92 and the first joint portion 83 of the translucent member 80, and the second metal film 924 of the enclosing portion 92 and the second joint portion 84 of the translucent member 80 are formed. Join each one.

The connecting region in the first joining portion 83 is joined to the region passing through the opening of the first metal film 922 by the second metal film 924. The conductive film 921 is arranged so as to pass through the opening by the first joint 83 in top view or bottom view. Therefore, the conductive film 921 is provided so as to pass through the region corresponding to the opening of the first joint portion 83.

Further, the first joint portion 83 is joined to the first metal film 922 so as to connect the two first metal film parts 923. The two first metal film parts 923 are connected through an opening through which the conductive film 921 does not pass. Further, the second joint portion 84 is joined to the second metal film 924 so as to connect the two second metal film parts 925. The two second metal film parts 925 are connected through an opening through which the first metal film 922 does not pass.

The translucent member 80 and the wavelength conversion member 90 are joined so that the first joining portion 83 surrounds the wavelength conversion portion 91. By this joining, the first wiring pattern 81 is electrically connected to the first metal film 922, and the second metal film 924 is electrically connected to the second wiring pattern 82. Therefore, the conductive film 921 can be taken from the first wiring pattern 81 and electrically connected to the second wiring pattern 82.

The conductive film 921 is surrounded by a thin linear film in the vicinity of the wavelength conversion unit 91. Therefore, when an abnormality such as a crack occurs in the wavelength conversion unit 91, the conductive film 921 is also cracked in response to the impact, and the electrical connection state is changed. Therefore, by detecting this change (for example, a large increase in the resistance value), it is possible to detect an abnormality in the wavelength conversion unit 91.

From this, it can be said that the conductive film 921 is an abnormality detecting element which is a sensor for detecting an abnormality of the wavelength conversion unit 91. Further, the wavelength conversion unit 91 can be said to be a detection target member that is a target for which an abnormality is detected by the abnormality detection element. Similarly, the light incident region can be said to be a detection target region.

Further, the conductive film 921 does not pass under the wavelength conversion unit 91, that is, directly under the lower surface of the wavelength conversion unit 91, and surrounds the conductive film 921. By doing so, the light emitted from the semiconductor laser element 20 is incident on the wavelength conversion unit 91 without passing through the conductive film 921, so that the light can be efficiently incident.

The upper surface of the translucent member 80 is larger than the lower surface of the wavelength conversion member 90. Further, in top view, the upper surface of the translucent member 80 surrounds the lower surface of the wavelength conversion member 90. Alternatively, it surrounds the wavelength conversion member 90. In top view, the two metal films on the upper surface of the translucent member 80 are each provided from a region overlapping the lower surface of the wavelength conversion member 90 to a region not overlapping.

Next, the wiring 70 for electrically connecting the abnormality detection element is joined. For the electrical connection, a metal film provided on the second step portion 162 of the base portion 10 and a region of the metal film of the translucent member 80 that does not overlap the lower surface of the wavelength conversion member 90 are used. One end of the wiring 70 is joined to the metal film on the upper surface of the translucent member 80, and the other end is joined to the metal film on the upper surface of the second step portion 162.

Here, the wiring 70 for electrically connecting the semiconductor laser element 20, the protection element 50, and the temperature measuring element 60 is the first wiring 71, and the wiring 70 for electrically connecting the abnormality detection element is the second wiring 70. It shall be referred to as wiring 72.

The six metal films on the upper surface 11 of the base 10 are two metal films for supplying power to the semiconductor laser element 20, two metal films for supplying power to the temperature measuring element 60, and an abnormality detecting element. It is composed of two metal films for supplying power. The mode of power supply is not limited to this. For example, when the temperature measuring element 60 is not provided, the metal film may not be provided. Further, for example, the metal film may be used for other purposes.

Next, the resin member 100 is formed inside the frame formed by the upper surface 11 of the base 10. The resin member 100 is formed so as to fill the gap between the base 10 and the wavelength conversion member 90. The resin member 100 can be formed, for example, by pouring a thermosetting resin and curing it with heat.

The resin member 100 includes an inner side surface 14 that intersects the upper surface 11 of the base portion 10, an upper surface of the step portion 16 of the base portion 10, a side surface of the translucent member 80, an upper surface of the translucent member 80, and a side surface of the wavelength conversion member 90. In contact with. Also, it does not reach the upper surface of the wavelength conversion member 90. Alternatively, even if it reaches the upper surface of the surrounding portion 92, it does not reach the upper surface of the wavelength conversion portion 91. As a result, the resin member 100 can be provided so as to fill the gap while avoiding the wavelength conversion unit 91 which is the light extraction surface.

In the formation of the resin member 100, the resin can also enter the gap between the translucent member 80 and the wavelength conversion member 90. Further, since the conductive film 921 is connected through the opening, the connection for the abnormality detection mechanism is stable, but since the conductive film 921 has an opening for that purpose, there is a concern that the resin may reach the lower surface of the wavelength conversion unit 91. To.

If the resin reaches the lower surface of the wavelength conversion unit 91, it may hinder the extraction of light. In particular, when the resin member 100 is formed of a light-shielding resin, at least a part of the light traveling from the semiconductor laser element 20 to the wavelength conversion unit 91 may be blocked.

In the light emitting device 1, by providing the openings of the first joint portion 83 and the second joint portion 84 in different directions, a structure in which the resin does not easily enter the wavelength conversion portion 91 is realized. As a result, the resin member 100 can be formed so as not to obstruct the space between the translucent region of the translucent member 80 and the translucent region of the wavelength conversion member 90 while filling the gap.

As described above, by having a structure for preventing the resin from entering the wavelength conversion unit 91, it is possible to appropriately operate the abnormality detection mechanism while effectively functioning as the light emitting device 1. From this point of view, the first joint portion 83 and the second joint portion 84 can be said to be intrusion protection portions for preventing intrusion from the outer periphery thereof.

Further, the wavelength conversion member 90 or the wavelength conversion unit 91 can be said to be a protection target member that is an intrusion protection target. Similarly, the light incident region can be said to be a protected region. The material that may invade is not limited to resin. For example, a fluid material such as an adhesive can be targeted.

Further, the resin member 100 includes the second wiring 72. That is, when the resin member 100 is formed, the second wiring 72 is not exposed in the light emitting device 1. As a result, the second wiring 72 can be protected from adhesion of water droplets and the like. It does not have to be included.

The wavelength conversion member 90 penetrates through the through hole formed by the resin member 100. Further, the convex protruding portion formed on the lower surface side of the resin member 100 fits into the groove between the side surface of the translucent member 80 and the inner side surface 14 of the base portion 10.

The resin member 100 hides the metal region exposed inside the frame by the upper surface 11 of the base 10 when viewed from above. In the light emitting device 1, the resin member 100 is formed of an insulating material and plays a role as an insulating member. As a result, the abnormality detection mechanism can be operated appropriately. Further, the conduction region for supplying power to the light emitting device 1 by the external power source can be limited to the outside of the concave recessed space.

Further, the resin member 100 has a light-shielding property, and thus plays a role as a light-shielding member that suppresses light leakage from other than the light extraction surface. In order to improve the light blocking effect, the resin member 100 is provided up to the opening of the second joint portion 84 and the region between the first joint portion 83 and the second joint portion 84, and the resin member 100 is provided in the first joint portion 83. It is preferable that the opening is not reached.

By effectively filling the gap with the resin member 100 having a light-shielding property in this way, it is possible to realize an effective light emitting device that suppresses light leakage from other than the desired light extraction region.

Here, some other examples of the translucent member applied to the light emitting device 1 of the embodiment will be given.
<Modification example 1>
FIG. 13 is a top view showing the translucent member 280, which is another example of the translucent member applied to the light emitting device 1. The broken line arrow in FIG. 13 schematically shows the current flow in the first wiring pattern 281 and the second wiring pattern 282. The current flow is an example of the flow when the light emitting device 1 is operated. Further, the width W in FIG. 13 exemplifies the width of the wiring pattern reasonably derived from the relationship with the direction in which the current flows.

The translucent member 280 is different from the translucent member 80 shown in FIG. 11 in that it has a wiring width adjusting portion 283. The wiring width adjusting unit 283 constitutes a part of the wiring pattern (first wiring pattern 281 or second wiring pattern 282). Further, the wiring width adjusting portion 283 is provided in the vicinity of the portion connected to the connecting region of the joint portion (first joint portion 83 or second joint portion 84) in the wiring pattern.

In the translucent member according to the light emitting device 1, the width of the portion connected to the joint portion of the wiring pattern is smaller than the width of the portion provided in the outer peripheral region. The width of the wiring pattern referred to here is rationally derived from the relationship with the direction in which the current flows (see FIG. 13).

Therefore, the current flows from the wide portion to the narrow portion, and also flows from the narrow portion to the wide portion. The wiring width adjusting unit 283 is a portion that suppresses a sudden change in the width of the wiring pattern through which the current flows. By providing the wiring width adjusting unit 283, it is possible to suppress the occurrence of a situation in which the wiring pattern is damaged due to a sudden change in current density caused by the flow of a large current.

Further, the wiring width adjusting portion 283 is provided immediately in front of the portion connected to the connecting region of the joint portion. As a result, the degree of change in the current density can be relaxed before the portion of the wiring pattern connected to the connection region where the current density is the highest.

The wiring width adjusting portion 283 connects the wide portion and the narrow portion, and the wiring width adjusting portion 283 is narrower than the wider width and wider than the narrow width. Has a part. That is, it has an intermediate width between the wider width and the narrower width.

The wiring width adjusting portion 283 is formed, for example, in a shape in which the width is gradually reduced from a position connected to the wide portion to a position connected to the narrow portion. Further, as a shape in which the width is gradually reduced, for example, there is a shape in which the width is continuously reduced, and for example, there is a shape in which the width is gradually reduced.

As a shape for continuously narrowing the width, as illustrated in FIG. 13, at least one of the two opposing sides defining the width of the wiring width adjusting portion 283 is formed by a curved line. In the example of FIG. 13, the wiring width adjusting unit 283 according to the first wiring pattern 281 forms only one of the two opposing sides that define the width with a curved line.

Further, one side forming the curve is the side of the two sides closer to the current path. In other words, it is the side of the first wiring pattern 281 near the region where the second wiring 72 is joined. The two sides may be formed by a curve. The first wiring pattern 281 is formed in a straight line because the side far from the region where the second wiring 72 is joined faces the second wiring pattern 282 close to each other.

Further, the wiring width adjusting unit 283 according to the second wiring pattern 282 forms two opposing sides that define the width with a curved line. Since both sides are sufficiently separated from the first wiring pattern 281, both sides are curved. It should be noted that only one side may be formed by a curve.

Further, as a shape for continuously narrowing the width, for example, two opposing sides defining the width of the wiring width adjusting portion 283 are connected to a position connected to the wide portion and a position connected to the narrow portion. Form with a straight line. That is, with respect to one of the two sides, the other side is neither vertical nor parallel, and is formed by an oblique straight line.

Further, as a shape in which the width is gradually narrowed, for example, there is a shape in which a position connected to the wide portion to a position connected to the narrow portion is formed in a stepped shape. The shape of the wiring width adjusting unit 283 may not be limited to the shape illustrated here.

The wiring width adjusting unit 283 is provided in the first wiring pattern 281. Further, the wiring width adjusting unit 283 is provided in the second wiring pattern 282. The wiring width adjusting portion 283 according to the second wiring pattern 282 is provided immediately in front of the portion of the wavelength conversion member 90 that overlaps with the conductive film 921 in a top view (see the arrangement of the conductive film 921 in FIG. 10).

<Modification 2>
FIG. 14 is a top view showing a translucent member 380, which is another example of the translucent member applied to the light emitting device 1. The translucent member 380 is different from the translucent member 280 in that the position where the wiring width adjusting portion 283 is provided is different in the second wiring pattern 382.

In the translucent member 380, the wiring width adjusting portion 283 according to the first wiring pattern 281 and the wiring width adjusting portion 283 according to the second wiring pattern 382 are provided at positions facing each other in a top view. By arranging in this way, in the second wiring pattern 382, a long current path from the position where the second wiring 72 is joined to the wiring width adjusting portion 283 can be secured, and the width can be gradually narrowed. Further, the wiring width adjusting portion 283 can be provided at a position away from the portion of the wavelength conversion member 90 that overlaps with the conductive film 921 in the top view.

<Modification example 3>
FIG. 15 is a top view showing a translucent member 480, which is another example of the translucent member applied to the light emitting device 1. The translucent member 480 is different from the translucent member 280 and the translucent member 380 in that the position where the wiring width adjusting portion 283 is provided is different in the second wiring pattern 482.

In the translucent member 480, the wiring width adjusting portion 283 related to the second wiring pattern 482 is provided on the opposite side of the position where the second wiring pattern 482 and the second wiring 72 are joined (see FIG. 5) in the top view. .. Further, in the outer peripheral region of the translucent member 480, the wiring width adjusting portion 283 related to the second wiring pattern 482 is located in the region opposite to the region on the side where the second wiring pattern 482 and the second wiring 72 are joined. Provided. By arranging in this way, in the second wiring pattern 482, a long current path can be secured from the position where the second wiring 72 is joined to the wiring width adjusting portion 283.

The light emitting device 1 of the embodiment has been described above, and the optical member mounted on the light emitting device 1 has been described as one embodiment. The optical member in the light emitting device 1 is a member having a translucent member 80 and a wavelength conversion member 90, and the translucent member 80 and the wavelength conversion member 90 are joined to each other. Further, although described as the resin member 100 in the light emitting device 1, the optical member may have an abnormality detecting element. Further, a light-shielding member for light-shielding may be provided on a part of the translucent member. Further, it may have an insulating member for insulation. The optical member realizes an optical system that controls light from a light emitting element such as a semiconductor laser element.

As described above, the present invention having the technical features disclosed in the specification is not limited to the structure described in the embodiment of the specification. For example, the present invention can be applied to a light emitting device having components not disclosed in the embodiment, and a difference from the disclosed structure does not constitute a basis for not being able to apply the present invention.

This means that the present invention can be applied even if it is not essential that all the components of the light emitting device disclosed by the embodiment are provided in a necessary and sufficient manner. For example, when some components of the light emitting device disclosed by the embodiment are not described in the claims, the components are not limited to those disclosed in the present embodiment, and alternatives, It recognizes the degree of freedom of design by those skilled in the art such as omission, deformation of shape, change of material, etc., and requests that the invention described in the claims be applied.

The optical member described in the embodiment can be used for an optical system used as a light source such as an in-vehicle headlight, a lighting, a projector, a head-mounted display, and a backlight of a display.

1 Light emitting device 10 Base 11 Top surface 12 Bottom surface 13 Bottom surface 14 Inner surface
15 Outer side surface 16 Stepped part 161 First stepped part 162 Second stepped part 20 Semiconductor laser element 30 Submount 40 Light reflecting member 41 Light reflecting surface 411 First reflecting surface 412 Second reflecting surface 50 Protective element 60 Temperature measuring element 70 Wiring 71 1st wiring 72 2nd wiring 80, 280, 380, 480 Translucent member 81, 281 1st wiring pattern 82, 282, 382, 482 2nd wiring pattern 83 1st joint 84 2nd joint 283 Wiring width Adjusting part 90 Wavelength conversion member 91 Wavelength conversion part 92 Surrounding part 921 Conductive film 922 First metal film
923 1st metal film parts 924 2nd metal film
925 2nd metal film parts
100 resin member

Claims (16)

An optical member having an upper surface and a lower surface.
A wavelength conversion member having a wavelength conversion unit and a surrounding portion surrounding the side surface of the wavelength conversion unit.
A translucent member that joins the lower surface of the surrounding portion and covers the wavelength conversion portion in a bottom view.
With
The translucent member is placed on the upper surface to be joined to the surrounding portion.
A first junction that surrounds the wavelength conversion unit and has an opening in part.
A region that surrounds the first joint and does not include a straight line that advances from the inner region of the first joint to the outer region through the opening, and the second joint with a partial opening. ,
An optical member having. The optical member according to claim 1, wherein the surrounding portion reflects light at least in a region surrounding the side surface of the wavelength conversion portion. The optical member according to claim 1 or 2, further comprising a light-shielding member provided on the upper surface of the translucent member joined to the wavelength conversion member. The optical member according to claim 3, wherein the light-shielding member is provided in an opening of the second joint portion and a region between the first joint portion and the second joint portion. The translucent member is placed on the upper surface.
A first wiring pattern that connects from the outside of the second joint through the opening of the second joint to the first joint.
A second wiring pattern that connects the outside of the second joint to the second joint,
The optical member according to any one of claims 1 to 4. The optical member according to claim 5, wherein the second wiring pattern surrounds the second joint portion except for an opening of the second joint portion. The wavelength conversion member is formed on the lower surface of the surrounding portion.
A first metal film provided in a region where the first joint is joined,
A second metal film provided in the region where the second joint is joined, and
One end is arranged on the first metal film, and the other end is arranged on the second metal film from the one end through the inside of the first metal film and further through the region corresponding to the opening of the first joint. The optical member according to claim 5 or 6, which has a conductive film. The optical member according to claim 7, wherein the conductive film does not pass under the wavelength conversion unit. An optical member having an upper surface and a lower surface.
On the lower surface, a protected member having a protected area and an outer peripheral area of the protected area,
A translucent member that joins the lower surface of the outer peripheral region and covers the protected region in a bottom view.
With
The translucent member is formed on an upper surface that is joined to the outer peripheral region.
A first intrusion protection unit that surrounds the protection area and has an opening in a part thereof.
A second intrusion that surrounds the first intrusion protection portion and does not include a straight line that goes from the inner region of the first intrusion protection portion to the outer region through the opening, and is partially provided with an opening. With the protection department
An optical member having. A base having a bottom surface and a frame surrounding the bottom surface,
The semiconductor laser element arranged on the bottom surface and
A translucent member that joins the first upper surface between the upper surface and the bottom surface of the base portion inside the frame to seal the space in which the semiconductor laser element is arranged.
It has a wavelength conversion unit capable of converting light emitted from the semiconductor laser element into light having a different wavelength, and a surrounding portion surrounding the side surface of the wavelength conversion unit, and is joined to the translucent member at the surrounding portion. Wavelength conversion member and
A resin member provided on the translucent member to which the wavelength conversion member is bonded, and
Have,
A first junction that surrounds the wavelength conversion portion and is partially provided with an opening, and a region that surrounds the first junction and passes through the opening from the inner region of the first junction to the outside. A light emitting device in which the translucent member and the wavelength conversion member are joined via a second joint portion that is partially provided with an opening in a region that does not include a straight line leading to the region. The light emitting device according to claim 10, wherein the resin member is a light-shielding resin member. The translucent member is placed on the upper surface.
A first wiring pattern that connects from the outside of the second joint through the opening of the second joint to the first joint.
A second wiring pattern that connects the outside of the second joint to the second joint,
The light emitting device according to claim 10 or 11. The light emitting device according to claim 12, wherein the second wiring pattern surrounds the second joint portion except for an opening of the second joint portion. Claim 12 or 13, respectively, the first wiring pattern and the second wiring pattern are connected to a second upper surface provided between the upper surface of the base portion and the first upper surface inside the frame via a wire. The light emitting device according to any one of the above. The wavelength conversion member is formed on the lower surface of the surrounding portion.
A first metal film provided in a region where the first joint is joined,
A second metal film provided in the region where the second joint is joined, and
One end is arranged on the first metal film, and the other end is arranged on the second metal film from the one end through the inside of the first metal film and further through the region corresponding to the opening of the first joint. The light emitting device according to any one of claims 10 to 14, further comprising a conductive film. A base having a bottom surface and a frame surrounding the bottom surface,
The semiconductor laser element arranged on the bottom surface and
A translucent member that joins the first upper surface between the upper surface and the bottom surface of the base portion inside the frame to seal the space in which the semiconductor laser element is arranged.
A wavelength conversion member having a light incident region and an outer peripheral region of the light incident region on the lower surface and joining with the translucent member in the outer peripheral region.
A resin member provided on the translucent member to which the wavelength conversion member is bonded, and
Have,
A first joint that surrounds the light incident region and is partially provided with an opening, and a region that surrounds the first joint and passes through the opening from the inner region of the first joint to the outside. A light emitting device in which the translucent member and the wavelength conversion member are joined via a second joint portion that is partially provided with an opening in a region that does not include a straight line leading to the region.