JP2020136466A - Coil component and manufacturing method thereof - Google Patents

Abstract

To prevent deterioration in reliability of a coil component using a permanent resist, caused by a presence of a gap in the coil component.SOLUTION: A coil component 1 comprises: a spirally wound coil pattern CP1 formed on an insulating layer D1; an inner-layer insulation pattern R1 formed on the insulating layer D1 and arranged along the coil pattern CP1; and an insulating layer D2 covering the coil pattern CP1 and the inner-layer insulation pattern R1, and having a physical property different from that of the inner-layer insulation pattern R1. A part of the insulating layer D2 is positioned between the coil pattern CP1 and the inner-layer insulation pattern R1. Thus, the insulating layer D2 having the physical property different from that of the inner-layer insulation pattern R1 is mediated between the inner-layer insulation pattern R1 formed of a permanent resist and the coil pattern CP1, the generation of a gap can be therefore suppressed even when adhesion between the inner-layer insulation pattern R1 and the coil pattern CP1 is low.SELECTED DRAWING: Figure 1

Description

The present invention relates to a coil component and a method for manufacturing the same, and more particularly to a coil component using a so-called permanent resist and a method for manufacturing the same.

A coil component having a spiral coil pattern is usually a method in which a resist opened in a spiral shape is formed on a substrate, a coil pattern is formed by electroplating in a region partitioned by the resist, and then the resist is peeled off. It is generally made by. However, when the coil parts are manufactured by this method, the coil pattern is also slightly etched when the seed layer, which is the feeding film for electrolytic plating, is removed by etching, so that the cross-sectional area of the coil pattern is reduced. There was a problem. Further, when the resist is peeled off, the coil pattern needs to be etched as a pretreatment, and the cross section of the coil pattern is reduced in this step as well.

On the other hand, as described in Patent Document 1, if a spiral coil pattern is formed by using a so-called permanent resist, it is not necessary to remove the seed layer or perform pretreatment for peeling the resist. , It is possible to prevent a decrease in the cross-sectional area of the coil pattern.

JP-A-2017-199798

However, the permanent resist often has low adhesion to the coil pattern made of metal, and as a result, there is a case where a gap is formed between the permanent resist and the coil pattern. Since such a gap may affect the reliability of the coil component, it is desirable to eliminate it as much as possible.

Therefore, an object of the present invention is to prevent a decrease in reliability due to the presence of gaps in a coil component using a permanent resist. Another object of the present invention is to provide a method for manufacturing such a coil component.

The coil component according to the present invention is formed on the first insulating layer, the first insulating layer, the spirally wound coil pattern, and the first insulating layer, and is formed along the coil pattern. A second insulating layer that covers the arranged in-layer insulation pattern and the coil pattern and the in-layer insulation pattern and has different physical properties from the in-layer insulation pattern is provided, and a part of the second insulation layer is the coil pattern. It is characterized by being located between the intra-layer insulation patterns.

According to the present invention, since a second insulating layer having different physical properties from the intralayer insulation pattern is interposed between the intralayer insulation pattern and the coil pattern made of permanent resist, the intralayer insulation pattern and the coil pattern Even when the adhesion is low, it is possible to suppress the occurrence of gaps.

In the present invention, the side surface of the coil pattern may have a lower region in contact with the in-layer insulation pattern and an upper region in contact with the second insulation layer. According to this, it is possible to suppress the occurrence of a gap in the upper region. In this case, the upper region may be rougher than the lower region. According to this, it is possible to further improve the adhesion between the upper region and the second insulating layer.

In the present invention, the height of the in-layer insulation pattern with respect to the first insulation layer may be lower than that of the coil pattern. According to this, another coil pattern is easily formed on the second insulating layer.

In the present invention, the second insulating layer may be closer to the coefficient of thermal expansion of the coil pattern than the intralayer insulation pattern. According to this, it is possible to suppress the generation of gaps due to the difference in the coefficient of thermal expansion. In this case, the second insulating layer may contain a filler having an average particle size smaller than the distance between the coil pattern and the intra-layer insulating pattern. According to this, it becomes possible to fill the filler between the insulation pattern in the layer and the coil pattern.

In the method for manufacturing a coil component according to the present invention, a first step of forming a spiral seed pattern on a first insulating layer and an in-layer insulating pattern along the seed pattern are formed on the first insulating layer. The second step, the third step of forming a spiral coil pattern in the region partitioned by the intralayer insulation pattern by growing the seed pattern by electrolytic plating, and the removal of a part of the intralayer insulation pattern. By doing so, the coil pattern and the in-layer insulation pattern are covered with the fourth step of forming a gap between the coil pattern and the in-layer insulation pattern and the second insulation layer having different physical properties from the in-layer insulation pattern. It is characterized by including a fifth step of filling the gap.

According to the present invention, since a part of the in-layer insulation pattern made of the permanent resist is removed, a gap can be formed between the coil pattern and the in-layer insulation pattern. As a result, the gap is filled with a second insulating layer having different physical properties from the intralayer insulation pattern, so that the generation of the gap is suppressed even when the adhesion between the intralayer insulation pattern and the coil pattern is low. It becomes possible to do.

In the present invention, the fourth step may be performed by plasma processing, blast processing or laser processing. According to this, the height of the in-layer insulation pattern can be reduced, and the width of the upper part of the in-layer insulation pattern can be reduced.

In the present invention, in the stage after the third step and before the fourth step, the height of the in-layer insulation pattern is higher than that of the coil pattern with respect to the first insulation layer. At the stage after the step 4 is performed, the height of the in-layer insulation pattern with respect to the first insulation layer may be lower than that of the coil pattern. According to this, another coil pattern is easily formed on the second insulating layer.

In the present invention, the second insulating layer contains a filler, and in the fifth step, the filler may be put in the gap. According to this, it is possible to make the coefficient of thermal expansion of the second insulating layer filled in the gap close to the coefficient of thermal expansion of the coil pattern.

The method for manufacturing a coil component according to the present invention may further include a step of roughening the exposed surface of the coil pattern after performing the fourth step and before performing the fifth step. According to this, it is possible to further improve the adhesion between the coil pattern and the second insulating layer.

As described above, according to the present invention, it is possible to provide a highly reliable coil component and a method for manufacturing the same.

FIG. 1 is a schematic cross-sectional view for explaining the structure of the coil component 1 according to the preferred embodiment of the present invention. FIG. 2 is an enlarged schematic cross-sectional view of a part of the coil structure C. FIG. 3 is an enlarged schematic cross-sectional view of a part of the coil structure C according to the modified example. FIG. 4 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 5 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 6 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 7 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 8 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 9 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 10 is a process diagram for explaining a method of manufacturing the coil component 1. FIG. 11 is a process diagram for explaining a method of manufacturing the coil component 1. FIG. 12 is a process diagram for explaining a method of manufacturing the coil component 1. FIG. 13 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 14 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 15 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 16 is a process diagram for explaining a method of manufacturing the coil component 1. FIG. 17 is a process diagram for explaining a manufacturing method of the coil component 1. FIG. 18 is a process diagram for explaining a method of manufacturing the coil component 1. FIG. 19 is a process diagram for explaining a method of manufacturing the coil component 1. FIG. 20 is a process diagram for explaining a method of manufacturing the coil component 1. FIG. 21 is a process diagram for explaining a method of manufacturing the coil component 1. FIG. 22 is a process diagram for explaining a method of manufacturing the coil component 1. FIG. 23 is a process diagram for explaining the manufacturing method of the coil component 1. FIG. 24 is a process diagram for explaining the manufacturing method of the coil component 1. FIG. 25 is a process diagram for explaining the manufacturing method of the coil component 1.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic cross-sectional view for explaining the structure of the coil component 1 according to the preferred embodiment of the present invention.

As shown in FIG. 1, the coil component 1 according to the present embodiment includes magnetic resin layers M1 and M2 laminated via a first insulating layer D1, a coil structure C embedded in the magnetic resin layer M1, and bumps. It has terminal electrodes E1 and E2 provided on the surface of the magnetic resin layer M1 via conductors B1 and B2 and a fourth insulating layer D4 and connected to bump conductors B1 and B2, respectively. The insulating layers D1 and D4 are insulators made of a non-magnetic resin material. On the other hand, the magnetic resin layers M1 and M2 are composite materials in which magnetic powder such as ferrite is mixed in the resin, and function as a magnetic path of magnetic flux generated when a current is passed through the coil component 1.

The coil structure C includes a first coil pattern CP1 located in the lower layer and a second coil pattern CP2 located in the upper layer. Both the coil patterns CP1 and CP2 are made of a good conductor such as copper (Cu). The coil patterns CP1 and CP2 are both wound in a spiral shape in a plan view. The outer peripheral end of the coil pattern CP1 is connected to the terminal electrode E1 via the connection pattern CP3 and the bump conductor B1, and the outer peripheral end of the coil pattern CP2 is connected to the terminal electrode E2 via the bump conductor B2. Then, the inner peripheral end of the coil pattern CP1 and the inner peripheral end of the coil pattern CP2 are connected to each other, thereby forming a single coil element capable of writing with one stroke.

The coil pattern CP1 includes a seed pattern S1 and a plating pattern P1. Similarly, the coil pattern CP2 includes a seed pattern S2 and a plating pattern P2. In the cross section perpendicular to the winding direction of the coil pattern CP1, in-layer insulation patterns R1 made of permanent resist are present on both sides of each turn of the coil pattern CP1. That is, the in-layer insulation pattern R1 is provided along both side surfaces of the coil pattern CP1. A second insulating layer D2 is provided so as to cover the coil pattern CP1 and the in-layer insulation pattern R1, thereby separating the coil pattern CP1 and the coil pattern CP2. Similarly, in a cross section perpendicular to the winding direction of the coil pattern CP2, an in-layer insulation pattern R2 made of a permanent resist exists on both sides of each turn of the coil pattern CP2. That is, the in-layer insulation pattern R2 is provided along both side surfaces of the coil pattern CP2. A third insulating layer D3 is provided so as to cover the coil pattern CP2 and the in-layer insulation pattern R2, whereby the coil pattern CP2 and the magnetic resin layer M1 are separated from each other.

The in-layer insulation patterns R1 and R2 are made of a filler-free resin material such as an epoxy resin or a phenol resin. On the other hand, the insulating layers D2 and D3 are made of a resin material such as epoxy containing a filler, and both have different physical properties. The filler is made of a material having a small coefficient of thermal expansion such as silica, and by mixing such a filler in the insulating layers D2 and D3, the coefficient of thermal expansion is lowered and brought close to the coefficient of thermal expansion of the coil patterns CP1 and CP2. The insulating layers D1 and D4 may or may not contain a filler. As described above, since the in-layer insulation patterns R1 and R2 are made of a resin material containing no filler, the difference in thermal expansion coefficient from the coil patterns CP1 and CP2 made of copper (Cu) or the like is large. On the other hand, since the insulating layers D2 and D3 are made of a resin material containing a filler, the difference in thermal expansion coefficient from the coil patterns CP1 and CP2 made of copper (Cu) or the like is small.

FIG. 2 is an enlarged schematic cross-sectional view of a part of the coil structure C, and shows a cross section perpendicular to the winding direction of the coil patterns CP1 and CP2.

As shown in FIG. 2, the in-layer insulation patterns R1 and R2 have a cross-sectional shape in which the width W2 at the upper end is narrower than the width W1 at the lower end. That is, W1> W2. Further, the lower portion of the wide in-layer insulation patterns R1 and R2 is in contact with the adjacent coil patterns CP1 and CP2, while the upper portion of the narrow in-layer insulation patterns R1 and R2 is in contact with the adjacent coil patterns CP1 and CP1. It is not in contact with CP2, and there is a gap between them. The gap formed by the coil pattern CP1 and the in-layer insulation pattern R1 is filled with the second insulating layer D2, and the gap formed by the coil pattern CP2 and the in-layer insulation pattern R2 is filled with the third insulating layer D3. Is filled. This gap is preferably larger than the filler contained in the insulating layers D2 and D3. According to this, since the filler enters the gap, the coefficient of thermal expansion in this portion is reduced. Therefore, as the filler mixed in the insulating layers D2 and D3, it is preferable to select a filler having an average particle size smaller than the above gap.

Further, of the side surfaces of the coil patterns CP1 and CP2, the second or third insulation without contacting the in-layer insulation patterns R1 and R2 rather than the length A1 of the lower region in contact with the in-layer insulation patterns R1 and R2. The length A2 of the upper region in contact with the layers D2 and D3 is larger. That is, A1 <A2. Further, the height H1 of the coil pattern CP1 with reference to the first insulating layer D1 is higher than the height H2 of the in-layer insulation pattern R1. That is, H1> H2. The height of the coil pattern CP2 with respect to the second insulating layer D2 is also higher than the height of the in-layer insulation pattern R2. Further, on the surface of the coil patterns CP1 and CP2, the upper region in contact with the insulating layers D2 and D3 may be a rough surface as compared with the lower region in contact with the in-layer insulating patterns R1 and R2.

With such a configuration, the contact between the coil patterns CP1 and CP2 and the in-layer insulation patterns R1 and R2 is compared with the case where the in-layer insulation patterns R1 and R2 are vertical as in a general coil component using a permanent resist. The area is reduced, and the contact area with the insulating layers D2 and D3 is increased accordingly. As a result, even when the adhesion between the coil patterns CP1 and CP2 and the in-layer insulation patterns R1 and R2 is low, it is possible to suppress the generation of gaps due to this. On the other hand, since the insulating layers D2 and D3 contain a filler and the difference in the coefficient of thermal expansion between the coil patterns CP1 and CP2 is small, the adhesion between the coil patterns CP1 and CP2 and the insulating layers D2 and D3 is sufficient. It will be secured. In particular, when the upper regions of the coil patterns CP1 and CP2 are roughened, the adhesion to the insulating layers D2 and D3 is further enhanced. Further, since the height of the in-layer insulation patterns R1 and R2 is lower than the height of the coil patterns CP1 and CP2, the flatness of the insulation layers D2 and D3 is also improved.

Examples of the method of processing the in-layer insulation patterns R1 and R2 into such a shape include a method of ashing the in-layer insulation patterns R1 and R2 by plasma processing. If ashing is performed by plasma processing, the in-layer insulation patterns R1 and R2 are scraped from the upper region exposed to plasma, so that the shape shown in FIG. 2 can be obtained. As an example, using a microwave plasma device, the power is set to 900 W, the substrate stage temperature is set to 150 ° C, the pressure in the chamber is set to ₂ torr, the chamber is set to 02 gas at 2000 sccm, CF ₄ gas at 75 sccm, and N ₂ gas at 125 sccm. By introducing it inside, the in-layer insulation patterns R1 and R2 can be ashed.

The shape of the in-layer insulation patterns R1 and R2 after plasma processing can be adjusted by the time during which the plasma processing is performed, and plasma processing is performed until the height of the in-layer insulation patterns R1 and R2 is lower than the coil patterns CP1 and CP2. Is preferable. Under the above conditions, it is preferable to carry out for about 10 minutes. However, when plasma processing is performed for a long time, the lower regions of the in-layer insulation patterns R1 and R2 are scraped, and the insulation layers D1 and D2 are exposed as shown in FIG. In this case, since the coil patterns CP1 and CP2 and the in-layer insulation patterns R1 and R2 are in a state of almost no contact with each other, the generation of a gap is hardly generated. However, if plasma processing is continued with the insulating layers D1 and D2 exposed, the insulating layers D1 and D2 will be damaged. Therefore, as shown in FIG. 2, plasma processing is performed within a range in which the insulating layers D1 and D2 are not exposed. Is preferable.

However, in the present invention, it is not essential to plasma-process the in-layer insulation patterns R1 and R2, and the in-layer insulation patterns R1 and R2 are formed into the shapes shown in FIGS. 2 or 3 by other methods such as blasting or laser processing. It may be processed into.

Next, a method of manufacturing the coil component 1 according to the present embodiment will be described.

4 to 25 are process diagrams for explaining the manufacturing method of the coil component 1 according to the present embodiment.

First, a support 10 provided with a metal foil 12 such as copper (Cu) is prepared on the surface of the substrate 11 (FIG. 4), and an insulating layer D1 and a seed layer 13 are formed on the surface of the metal foil 12 (FIG. 5). ). The insulating layer D1 and the seed layer 13 can be formed by a laminating method. Next, the seed layer 13 is patterned to form a spiral seed pattern S1 (FIG. 6). At this time, the seed pattern S1a is left in the portion that becomes the inner diameter region of the coil pattern CP1 and the portion that becomes the outer region of the coil pattern CP1. Next, an in-layer insulation pattern R1 along the seed pattern S1 is formed on the surface of the insulation layer D1 (FIG. 7). The intra-layer insulation pattern R1 is a negative pattern of the coil pattern CP1 made of a photosensitive permanent resist, and therefore the region partitioned by the intra-layer insulation pattern R1 is also spiral.

Next, the plating pattern P1 is formed by growing the seed pattern S1 by electrolytic plating (FIG. 8). As a result, the spiral coil pattern CP1 is formed in the region partitioned by the intra-layer insulation pattern R1. At this time, the sacrificial pattern VP1 is also formed in the inner diameter region of the coil pattern CP1 and the outer region of the coil pattern CP1. At this stage, the height with respect to the insulating layer D1 is higher in the in-layer insulation pattern R1 than in the coil pattern CP1. Next, the in-layer insulation pattern R1 is ashed by performing plasma processing for a predetermined time (FIG. 9). As a result, the shape of the in-layer insulation pattern R1 becomes the shape shown in FIG. 2 or FIG. That is, at least the upper region of the side surface of the coil pattern CP1 is exposed, and a gap is formed between the coil pattern CP1 and the in-layer insulation pattern R1. Further, the height with respect to the insulating layer D1 is lower in the in-layer insulation pattern R1 than in the coil pattern CP1. In this state, the exposed surface of the coil pattern CP1 is roughened by wet etching using formic acid or the like or dry etching by plasma treatment or the like.

Next, the coil pattern CP1, the sacrificial pattern VP1 and the in-layer insulation pattern R1 are covered with the insulation layer D2, and a seed layer 14 is further formed on the surface of the insulation layer D2 (FIG. 10). As a result, not only the upper surface of the coil pattern CP1 is covered with the insulating layer D2, but also the insulating layer D2 enters the gap between the coil pattern CP1 and the intra-layer insulating pattern R1. At this time, it is preferable to use a filler having an average particle size smaller than that of the gap so that the filler contained in the insulating layer D2 enters the gap between the coil pattern CP1 and the intra-layer insulating pattern R1. Further, since the surface of the coil pattern CP1 in contact with the insulating layer D2 is roughened, high adhesion can be obtained between the coil pattern CP1 and the insulating layer D2. The seed layer 14 can be formed by a laminating method.

Next, the seed layer 14 is patterned to form openings 14a to 14c that expose a part of the insulating layer D2 (FIG. 11). Of these, the opening 14a is formed at a position overlapping the outer peripheral end of the coil pattern CP1, and the opening 14a is formed at a position overlapping the inner peripheral end of the coil pattern CP1. The opening 14c is formed at a position overlapping the sacrificial pattern VP1. Next, the insulating layer D2 is etched with the patterned seed layer 14 as a mask to form openings D2a to D2c in the insulating layer D2 (FIG. 12). Of these, the opening D2a exposes the outer peripheral end of the coil pattern CP1, and the opening D2b exposes the inner peripheral end of the coil pattern CP1. The opening D2c exposes the sacrificial pattern VP1.

Next, the seed layer 14 is further patterned to form a spiral seed pattern S2 (FIG. 13). Next, an in-layer insulation pattern R2 along the seed pattern S2 is formed on the surface of the insulation layer D2 (FIG. 14). The intra-layer insulation pattern R2 is a negative pattern of the coil pattern CP2 made of a photosensitive permanent resist, and therefore the region partitioned by the intra-layer insulation pattern R2 is also spiral.

Next, the plating pattern P2 is formed by growing the seed pattern S2 by electrolytic plating (FIG. 15). As a result, the spiral coil pattern CP2 is formed in the region partitioned by the intra-layer insulation pattern R2. At this time, since the outer peripheral end of the coil pattern CP1 is exposed from the opening D2a, the outer peripheral end of the coil pattern CP1 is connected to the connection pattern CP3 located in the same layer as the coil pattern CP2. Further, since the inner peripheral end of the coil pattern CP1 is exposed from the opening D2b, the inner peripheral end of the coil pattern CP1 is formed at the inner peripheral end of the coil pattern CP2. Further, the sacrificial pattern VP2 is formed in the inner diameter region of the coil pattern CP2 and the outer region of the coil pattern CP2. The sacrificial pattern VP2 is connected to the sacrificial pattern VP1 via the opening D2c. At this stage, the height with respect to the insulating layer D2 is higher in the in-layer insulation pattern R2 than in the coil pattern CP2.

Next, the in-layer insulation pattern R2 is ashed by performing plasma processing for a predetermined time (FIG. 16). As a result, the shape of the in-layer insulation pattern R2 becomes the shape shown in FIG. 2 or FIG. That is, at least the upper region of the side surface of the coil pattern CP2 is exposed, and a gap is formed between the coil pattern CP2 and the in-layer insulation pattern R2. Further, the height with respect to the insulating layer D2 is lower in the in-layer insulation pattern R2 than in the coil pattern CP2. In this state, the exposed surface of the coil pattern CP2 is roughened by wet etching using formic acid or the like or dry etching by plasma treatment or the like.

Next, the insulating layer D3 covers the coil pattern CP2, the sacrificial pattern VP2, and the in-layer insulating pattern R2 (FIG. 17). As a result, not only the upper surface of the coil pattern CP2 is covered with the insulating layer D3, but also the insulating layer D3 enters the gap between the coil pattern CP2 and the intra-layer insulating pattern R2. At this time, it is preferable to use a filler having an average particle size smaller than that of the gap so that the filler contained in the insulating layer D3 enters the gap between the coil pattern CP2 and the intralayer insulation pattern R2. Further, since the surface of the coil pattern CP2 in contact with the insulating layer D3 is roughened, high adhesion can be obtained between the coil pattern CP2 and the insulating layer D3.

Next, the opening D3c is formed in the insulating layer D3 by etching the insulating layer D3 (FIG. 18). The opening D3c exposes the sacrificial pattern VP2. In this state, the sacrificial patterns VP1 and VP2 are removed by performing wet etching (FIG. 19). Since the coil patterns CP1 and CP2 and the connection pattern CP3 are covered with the in-layer insulation patterns R1 and R2 and the insulation layers D1 to D3, they are not etched. As a result, only the coil structure C remains on the insulating layer D1.

Next, the insulating layer D3 is further etched to form openings D3a and D3b in the insulating layer D3 (FIG. 20). Of these, the opening D3a exposes the connection pattern CP3, and the opening D3b exposes the outer peripheral end of the coil pattern CP2. Next, bump conductors B1 and B2 are formed on the surface of the insulating layer D3 (FIG. 21). Of these, the bump conductor B1 is connected to the connection pattern CP3 via the opening D3a, and the bump conductor B2 is connected to the outer peripheral end of the coil pattern CP2 via the opening D3b.

Next, after forming the magnetic resin layer M1 so as to embed the coil structure C and the bump conductors B1 and B2 (FIG. 22), the bump conductors B1 and B2 are exposed by polishing the upper surface of the magnetic resin layer M1 (FIG. 22). FIG. 23). Next, after the support 10 is peeled off, the magnetic resin layer M2 is formed on the lower surface of the insulating layer D1 (FIG. 24). Next, after forming the insulating layer D4 on the upper surface of the magnetic resin layer M1, the insulating layer D4 is etched to form openings D4a and D4b in the insulating layer D4 (FIG. 25). The opening D4a exposes the bump conductor B1, and the opening D4b exposes the bump conductor B2.

Then, if the terminal electrodes E1 and E2 connected to the bump conductors B1 and B2 are formed via the openings D4a and D4b, respectively, the coil component 1 shown in FIG. 1 is completed.

As described above, in the present embodiment, after the coil pattern CP1 is formed, the in-layer insulation pattern R1 is ashed before the insulating layer D2 is formed. Similarly, after the coil pattern CP2 is formed, the in-layer insulation pattern R2 is ashed before the insulation layer D3 is formed. As a result, the upper region of the side surface of the coil patterns CP1 and CP2 is exposed, so that the contact area between the coil patterns CP1 and CP2 and the insulating layers D2 and D3 can be increased.

Although the preferred embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the gist of the present invention, and these are also the present invention. Needless to say, it is included in the range.

For example, after removing the sacrificial patterns VP1 and VP2 in the step shown in FIG. 19, the insulating layer D1 exposed in the inner diameter region of the coil patterns CP1 and CP2 may be removed. According to this, since the magnetic resin layer M1 and the magnetic resin layer M2 are integrated, it is possible to increase the inductor of the coil component.

Further, the coil component according to the present invention does not have to be a component of the type surface-mounted on the circuit board, and may be a component of the type built in the circuit board.

1 Coil component 10 Support 11 Substrate 12 Metal foil 13, 14 Seed layers 14a to 14c Openings B1, B2 Bump conductor C Coil structure CP1 First coil pattern CP2 Second coil pattern CP3 Connection pattern D1 to D4 Insulation layer D2a to D2c Openings D3a to D3c Openings D4a, D4b Openings E1, E2 Terminal electrodes M1, M2 Magnetic resin layers P1, P2 Plating pattern R1, R2 Insulation pattern in layer S1, S1a, S2 Seed pattern VP1, VP2 Sacrifice pattern

Claims (11)

With the first insulating layer
A coil pattern formed on the first insulating layer and wound in a spiral shape,
An intra-layer insulation pattern formed on the first insulation layer and arranged along the coil pattern,
A second insulating layer that covers the coil pattern and the in-layer insulation pattern and has different physical properties from the in-layer insulation pattern is provided.
A coil component characterized in that a part of the second insulating layer is located between the coil pattern and the insulation pattern in the layer. The coil component according to claim 1, wherein the side surface of the coil pattern has a lower region in contact with the in-layer insulation pattern and an upper region in contact with the second insulation layer. The coil component according to claim 2, wherein the upper region has a rough surface as compared with the lower region. The coil component according to any one of claims 1 to 3, wherein the height of the in-layer insulation pattern is lower than that of the coil pattern with respect to the first insulation layer. The coil component according to any one of claims 1 to 4, wherein the second insulating layer is closer to the coefficient of thermal expansion of the coil pattern than the in-layer insulation pattern. The coil component according to claim 5, wherein the second insulating layer contains a filler having an average particle size smaller than the distance between the coil pattern and the insulating pattern in the layer. The first step of forming a spiral seed pattern on the first insulating layer, and
A second step of forming an in-layer insulation pattern along the seed pattern on the first insulation layer, and
A third step of forming a spiral coil pattern in the region partitioned by the intra-layer insulation pattern by growing the seed pattern by electroplating.
A fourth step of forming a gap between the coil pattern and the in-layer insulation pattern by removing a part of the in-layer insulation pattern,
A coil component comprising a fifth step of filling the gap by covering the coil pattern and the intralayer insulation pattern with a second insulation layer having different physical properties from the intralayer insulation pattern. Production method. The method for manufacturing a coil component according to claim 7, wherein the fourth step is performed by plasma processing, blast processing, or laser processing. In the stage after the third step and before the fourth step, the height of the in-layer insulation pattern is higher than that of the coil pattern with respect to the first insulation layer.
Claim 7 or 8 is characterized in that the height of the in-layer insulation pattern is lower than that of the coil pattern with respect to the first insulation layer in the stage after the fourth step. The method for manufacturing a coil component described in 1. The coil component according to any one of claims 7 to 9, wherein the second insulating layer contains a filler, and in the fifth step, the filler is inserted into the gap. Manufacturing method. Any one of claims 7 to 10, further comprising a step of roughening the exposed surface of the coil pattern after the fourth step and before the fifth step. The method for manufacturing a coil component described in 1.

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