JP2020120012A - Charged particle beam lithography apparatus - Google Patents

Charged particle beam lithography apparatus Download PDF

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JP2020120012A
JP2020120012A JP2019010353A JP2019010353A JP2020120012A JP 2020120012 A JP2020120012 A JP 2020120012A JP 2019010353 A JP2019010353 A JP 2019010353A JP 2019010353 A JP2019010353 A JP 2019010353A JP 2020120012 A JP2020120012 A JP 2020120012A
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door
chamber
charged particle
stage
particle beam
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JP7063281B2 (en
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博保 齋藤
Hiroyasu Saito
博保 齋藤
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Nuflare Technology Inc
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Abstract

To suppress an electrooptical lens barrel from tilting.SOLUTION: A charged particle beam lithography apparatus according to one embodiment comprises: a stage on which an object substrate of lithography is mounted; a chamber in which the stage is arranged, and which has a carrying-in/out opening part for the stage formed in one side face and also closed with a door; and an electrooptical lens barrel arranged on the chamber. An outer surface and an inner surface of the door protrude between an upper end and a lower end of the door out of the chamber from the upper end or lower end. The upper half-side outer surface and inner surface of the door are inclined surfaces located more outward on a more lower side, and the lower half-side outer surface and inner surface are inclined surfaces located more outward on a more upper side.SELECTED DRAWING: Figure 1

Description

本発明は、荷電粒子ビーム描画装置に関する。 The present invention relates to a charged particle beam drawing apparatus.

LSIの高集積化に伴い、半導体デバイスに要求される回路線幅は年々微細化されてきている。半導体デバイスへ所望の回路パターンを形成するためには、縮小投影型露光装置を用いて、石英上に形成された高精度の原画パターン(マスク、或いは特にステッパやスキャナで用いられるものはレチクルともいう。)をウェーハ上に縮小転写する手法が採用されている。高精度の原画パターンは、電子ビーム描画装置によって描画され、所謂、電子ビームリソグラフィ技術が用いられている。 With the high integration of LSI, the circuit line width required for semiconductor devices has been miniaturized year by year. In order to form a desired circuit pattern on a semiconductor device, a reduction projection type exposure apparatus is used, and a high-precision original image pattern formed on quartz (a mask, or one used particularly in a stepper or a scanner is also called a reticle). .) is reduced and transferred onto the wafer. The high-precision original image pattern is drawn by an electron beam drawing device, and so-called electron beam lithography technology is used.

従来の電子ビーム描画装置は、パターンが描画される試料を載置するステージと、このステージを収納するチャンバと、このチャンバの天板に配置され、電子ビームを射出する電子ビーム発生源及び、試料上の所望の位置に所望のパターンを描画するために電子ビームを形成する電子ビーム制御系を有する電子光学鏡筒とを有している。 A conventional electron beam drawing apparatus includes a stage on which a sample on which a pattern is drawn is placed, a chamber that houses the stage, an electron beam generation source that emits an electron beam and is placed on a top plate of the chamber, and a sample. And an electron optical lens barrel having an electron beam control system for forming an electron beam in order to draw a desired pattern at a desired position above.

描画を行う際には、電子光学鏡筒内とチャンバ内は、真空ポンプによって真空引きされ、真空中で試料への描画が行われる。チャンバ内のステージの設置、取り出し、点検等のために、チャンバ側面には、ステージを搬出入可能なサイズの開口部が形成されている。チャンバ内が真空引きされている間、この開口部は扉で塞がれている。扉は開閉可能であると共にネジ等で側面に固定されている。 When drawing, the inside of the electron optical lens barrel and the inside of the chamber are evacuated by a vacuum pump, and drawing is performed on the sample in a vacuum. An opening having a size that allows the stage to be carried in and out is formed on a side surface of the chamber in order to install, take out, inspect, etc. the stage in the chamber. This opening is closed by a door while the chamber is evacuated. The door can be opened and closed and is fixed to the side surface with screws or the like.

チャンバ内が真空状態になるとチャンバ内外で圧力差が生じるため、チャンバは微小に変形する。その際、開口部が形成された側面と形成されていない側面とでは、その剛性の差により変形量に差が生じ、チャンバ上面に固定された電子光学鏡筒が、剛性の弱い開口部が形成された側面側に傾斜する。 When the inside of the chamber is in a vacuum state, a pressure difference is generated inside and outside the chamber, so that the chamber is slightly deformed. At that time, the amount of deformation differs between the side surface where the opening is formed and the side surface where the opening is not formed, and the electron optical lens barrel fixed to the upper surface of the chamber forms the opening with low rigidity. It is inclined to the side surface.

これを防止するために、開口部を支える支柱を別途設置しているが、気圧の変動によりチャンバ内外の圧力差が変動し、チャンバが変形するため、支柱とチャンバの開口部との接合部分で精度よく面接触させることは困難である。そのため、面接触部分で気圧の上昇時と下降時での鏡筒の傾斜特性が変化してしまうという問題がある。 In order to prevent this, a strut that supports the opening is installed separately, but the pressure difference between the inside and outside of the chamber fluctuates due to fluctuations in atmospheric pressure, and the chamber deforms, so at the joint between the strut and the opening of the chamber. It is difficult to make surface contact with accuracy. Therefore, there is a problem that the tilt characteristics of the lens barrel at the surface contact portion change when the atmospheric pressure rises and when the atmospheric pressure falls.

特開2015−38967号公報JP, 2015-38967, A 特開2010−219373号公報JP, 2010-219373, A 特開2017−228633号公報JP, 2017-228633, A 特開2006−136835号公報JP, 2006-136835, A

本発明は、電子光学鏡筒の傾斜を抑制する荷電粒子ビーム描画装置を提供することを課題とする。 An object of the present invention is to provide a charged particle beam drawing apparatus that suppresses the tilt of an electron optical lens barrel.

本発明の一態様による荷電粒子ビーム描画装置は、描画対象基板を載置するステージと、前記ステージを内部に配置し、1つの側面に前記ステージの搬出入用の開口部が形成され、前記開口部が扉で塞がれたチャンバと、前記チャンバ上に配置された電子光学鏡筒と、を備え、前記扉の外面及び内面は、前記扉の上端または下端より前記上端と前記下端の間が前記チャンバの外方に突出するものである。 A charged particle beam drawing apparatus according to an aspect of the present invention includes a stage on which a drawing target substrate is placed, the stage is disposed inside, and an opening for loading/unloading the stage is formed on one side surface. A chamber whose part is closed by a door; and an electron optical lens barrel disposed on the chamber, wherein the outer surface and the inner surface of the door are located between the upper end and the lower end of the door from the upper end and the lower end. It projects to the outside of the chamber.

本発明の一態様による荷電粒子ビーム描画装置において、前記扉の上半側の外面及び内面が、下方ほど外方に位置する斜面となっており、下半側の外面及び内面が、上方ほど外方に位置する斜面となっている。 In the charged particle beam drawing apparatus according to one aspect of the present invention, the outer surface and the inner surface of the upper half side of the door are inclined surfaces located outward toward the lower side, and the outer surface and the inner surface of the lower half side are outward toward the upper side. It is a slope located in the direction.

本発明の一態様による荷電粒子ビーム描画装置において、前記扉は、前記チャンバの壁面よりも薄い。 In the charged particle beam drawing apparatus according to the aspect of the present invention, the door is thinner than a wall surface of the chamber.

本発明の一態様による荷電粒子ビーム描画装置において、前記扉の外面に強度調整用プレートが取り付けられている。 In the charged particle beam drawing apparatus according to the aspect of the present invention, a strength adjusting plate is attached to the outer surface of the door.

本発明の一態様による荷電粒子ビーム描画装置において前記扉は、前記扉の左端または右端より前記左端と前記右端の間が前記チャンバの外方に突出している。 In the charged particle beam drawing apparatus according to the aspect of the present invention, the door projects outward from the chamber between a left end and a right end of the door, between the left end and the right end.

本発明によれば、電子光学鏡筒の傾斜を抑制できる。 According to the present invention, the tilt of the electron optical lens barrel can be suppressed.

本発明の実施形態による描画装置の概略図である。1 is a schematic view of a drawing device according to an embodiment of the present invention. 描画装置の外観図である。It is an external view of a drawing apparatus. (a)は扉の斜視図であり、(b)は(a)のb−b線断面図である。(A) is a perspective view of a door, (b) is a bb line sectional view of (a). チャンバ内を真空引きした状態を説明する図である。It is a figure explaining the state which evacuated the inside of a chamber. 変形例による扉の断面図である。It is sectional drawing of the door by a modification. 変形例による扉の断面図である。It is sectional drawing of the door by a modification. 変形例による扉の断面図である。It is sectional drawing of the door by a modification. 変形例による扉の断面図である。It is sectional drawing of the door by a modification.

以下、本発明の実施の形態を図面に基づいて説明する。実施の形態では、荷電粒子ビームの一例として、電子ビームを用いた構成について説明する。但し、荷電粒子ビームは電子ビームに限るものでなく、イオンビーム等でもよい。 Embodiments of the present invention will be described below with reference to the drawings. In the embodiment, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to the electron beam, and may be an ion beam or the like.

図1は、本発明の実施形態における描画装置の構成を示す概略図である。図1に示すように、描画装置100は、描画部150と制御回路160とを備えている。描画装置100は、電子ビーム200を用いてレジストが塗布された基板101にパターンを描画する。描画部150は、電子光学鏡筒102とチャンバ(描画室)103を有している。電子光学鏡筒102は、チャンバ103上に配置される。 FIG. 1 is a schematic diagram showing the configuration of a drawing device according to an embodiment of the present invention. As shown in FIG. 1, the drawing apparatus 100 includes a drawing unit 150 and a control circuit 160. The drawing apparatus 100 uses the electron beam 200 to draw a pattern on the substrate 101 coated with the resist. The drawing unit 150 has an electron optical lens barrel 102 and a chamber (drawing chamber) 103. The electron optical lens barrel 102 is arranged on the chamber 103.

電子光学鏡筒102内には、例えば、電子銃201、照明レンズ202、第1アパーチャ203、投影レンズ204、偏向器205、第2アパーチャ206、対物レンズ207、及び偏向器208が設けられている。チャンバ103内には、XYステージ105が配置される。XYステージ105上には、描画対象となる基板101が載置される。基板101には、マスク基板やウェーハ等が含まれる。 In the electron optical lens barrel 102, for example, an electron gun 201, an illumination lens 202, a first aperture 203, a projection lens 204, a deflector 205, a second aperture 206, an objective lens 207, and a deflector 208 are provided. .. An XY stage 105 is arranged in the chamber 103. The substrate 101 to be drawn is placed on the XY stage 105. The substrate 101 includes a mask substrate, a wafer and the like.

描画部150は、制御回路160によって制御される。また、描画処理時には、電子光学鏡筒102内とチャンバ103内は真空ポンプ170によって真空引きされる。チャンバ103内にXYステージ105を設置したり、XYステージ105を取り出したり、XYステージ105の点検を行うために、チャンバ103の1つの側面には、XYステージ105を搬出入可能なサイズの開口部20が形成されている。そして、真空引きされている間は、開口部20は、別体の蓋となる扉30で塞がれている。扉30は蝶番(図示略)により開閉可能となっており、開口部20を塞ぐ際は、周縁部をボルト等でチャンバ側面に固定する。 The drawing unit 150 is controlled by the control circuit 160. Further, during the drawing process, the inside of the electron optical lens barrel 102 and the inside of the chamber 103 are evacuated by the vacuum pump 170. In order to install the XY stage 105 in the chamber 103, take out the XY stage 105, and inspect the XY stage 105, one side surface of the chamber 103 has an opening of a size that allows the XY stage 105 to be carried in and out. 20 are formed. While the vacuum is being drawn, the opening 20 is closed by a door 30 which is a separate lid. The door 30 can be opened and closed by a hinge (not shown), and when closing the opening 20, the peripheral edge is fixed to the side surface of the chamber with a bolt or the like.

チャンバ103には、開口部20が形成された側面とは異なる側面に、XYステージ105のX方向の位置を測定する第1レーザ干渉計、Y方向の位置を測定する第2レーザ干渉計が設けられている(共に図示略)。 The chamber 103 is provided with a first laser interferometer that measures the position in the X direction of the XY stage 105 and a second laser interferometer that measures the position in the Y direction on a side surface different from the side surface on which the opening 20 is formed. (Both are not shown).

図2に示すように、チャンバ103の外周面のうち1つの側面40には、XYステージ105を搬出入可能なサイズの開口部20が形成されている。よって、そのままだと、開口部20が形成された側面40の剛性が、開口部20が形成されていない側面に比べて弱くなってしまう。 As shown in FIG. 2, an opening 20 having a size that allows the XY stage 105 to be carried in and out is formed on one side surface 40 of the outer peripheral surface of the chamber 103. Therefore, if it is left as it is, the rigidity of the side surface 40 on which the opening 20 is formed is weaker than that on the side surface on which the opening 20 is not formed.

そこで、本実施形態では、開口部20を塞ぐ扉30を、図3(a)(b)に示すように、(開口部20を塞いだ状態で)上下方向の断面形状が上下方向の中間付近ほどチャンバ外方に突出する形状となるようにする。具体的には、扉30の上半側30uの外面及び内面が、下方ほど外方に位置する斜面となっており、下半側30dの外面及び内面が、上方ほど外方に位置する斜面となっている。なお、最も突出している部分は、扉の上端、下端の中央でなくてもよく、上端、下端の間であればよい。 Therefore, in the present embodiment, as shown in FIGS. 3A and 3B, the door 30 that closes the opening 20 has a vertical cross-sectional shape (in a state where the opening 20 is closed) near the middle of the vertical direction. The shape is such that it protrudes toward the outside of the chamber. Specifically, the outer surface and the inner surface of the upper half side 30u of the door 30 are slopes that are located outward as they are lower, and the outer surface and the inner surface of the lower half side 30d are slopes that are located outward as they are upward. Has become. Note that the most projecting portion does not have to be the center between the upper end and the lower end of the door, but may be between the upper end and the lower end.

チャンバ103及び扉30の材料としては、インバー等が挙げられる。チャンバ103は、側面の厚みが80mm程度、上面の厚みが120mm程度、底面の厚みが110mm程度である。扉30の厚みは12mm程度とチャンバ103の壁面の厚みと比較して薄くなっている。 Examples of materials for the chamber 103 and the door 30 include Invar. The chamber 103 has a side surface thickness of about 80 mm, a top surface thickness of about 120 mm, and a bottom surface thickness of about 110 mm. The thickness of the door 30 is about 12 mm, which is thinner than the thickness of the wall surface of the chamber 103.

扉30の上下方向の長さをH、上下方向の中間付近の突出量をFとした場合、F/Hは0.05〜0.1程度であることが好ましい。 When the length of the door 30 in the vertical direction is H and the protrusion amount in the vicinity of the middle in the vertical direction is F, F/H is preferably about 0.05 to 0.1.

側面40の開口部20を扉30で塞ぎ、真空ポンプ170で電子光学鏡筒102内及びチャンバ103内を真空引きすると、図4に示すように、扉30にかかる大気圧が、扉30を上下方向に伸ばす力に変換される。これにより、側面40と他の側面との変形量がほぼ同等となり、チャンバ上面に固定された電子光学鏡筒102の傾斜を抑えることができる。その結果、気圧変動があった場合であっても基板101に照射されるビーム位置の誤差が小さくなり、描画精度が向上する。 When the opening 20 of the side surface 40 is closed by the door 30 and the inside of the electron optical lens barrel 102 and the chamber 103 are evacuated by the vacuum pump 170, the atmospheric pressure applied to the door 30 causes the door 30 to move up and down as shown in FIG. It is converted into a force that stretches in the direction. As a result, the amounts of deformation of the side surface 40 and other side surfaces become substantially equal, and the tilt of the electron optical lens barrel 102 fixed to the chamber upper surface can be suppressed. As a result, even when there is a change in atmospheric pressure, the error in the beam position irradiated on the substrate 101 is reduced, and the drawing accuracy is improved.

扉30は、チャンバ103の壁面(上面、側面、底面)よりも薄くすることで、開口部20を扉30で塞いだ側面40の剛性を他の側面と同等の剛性に合せ込むことができると共に、軽量化を図ることができる。 By making the door 30 thinner than the wall surface (top surface, side surface, bottom surface) of the chamber 103, the rigidity of the side surface 40 in which the opening 20 is closed by the door 30 can be matched to the rigidity equivalent to other side surfaces. Therefore, the weight can be reduced.

また、側面40に隣接する、レーザ干渉計が設置された側面の変形も抑えられるため、XYステージ105の位置が精度良く測定でき、描画精度が向上する。 Further, since the deformation of the side surface adjacent to the side surface 40 on which the laser interferometer is installed is also suppressed, the position of the XY stage 105 can be accurately measured, and the drawing accuracy is improved.

図5に示す扉30Aのように、上下方向の中間部が垂直な平面30pとなっていてもよい。また、図6に示すように、扉30A(又は扉30)の外面に、強度調整用のプレート32が取り付けられるようになっていてもよい。プレート32を取り付けることで、扉20A(30)の上下方向の伸びが抑えられる。 Like the door 30A shown in FIG. 5, the vertical middle portion may be a vertical plane 30p. Further, as shown in FIG. 6, a plate 32 for strength adjustment may be attached to the outer surface of the door 30A (or the door 30). By attaching the plate 32, the vertical extension of the door 20A (30) is suppressed.

図7に示す扉30Bのように、湾曲した形状であってもよい。 A curved shape may be used like the door 30B shown in FIG. 7.

図8に示す扉30Cのように、上下方向及び左右方向の中間付近ほど外方に突出する、寄棟形状(ピラミッド形状)とすることもできる。すなわち、扉30Cは、下方ほど外方に位置する斜面30_1、左方ほど外方に位置する斜面30_2、上方ほど外方に位置する斜面30_3、右方ほど外方に位置する斜面30_4の4つの斜面を有してもよい。 Like the door 30C shown in FIG. 8, it can be formed in a ridged shape (pyramidal shape) in which it protrudes outward in the vicinity of the middle of the vertical direction and the horizontal direction. That is, the door 30C has four slopes, namely, a slope 30_1 located outward toward the bottom, a slope 30_2 located outward toward the left, a slope 30_3 located outward toward the top, and a slope 30_4 located outward toward the right. It may have a slope.

なお、本発明は上記実施形態そのままに限定されるものではなく、実施段階ではその要旨を逸脱しない範囲で構成要素を変形して具体化できる。また、上記実施形態に開示されている複数の構成要素の適宜な組み合わせにより、種々の発明を形成できる。例えば、実施形態に示される全構成要素から幾つかの構成要素を削除してもよい。さらに、異なる実施形態にわたる構成要素を適宜組み合わせてもよい。 It should be noted that the present invention is not limited to the above-described embodiments as they are, and can be embodied by modifying the constituent elements within a range not departing from the gist of the invention in an implementation stage. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, the constituent elements of different embodiments may be combined appropriately.

20 開口部
30 扉
40 側面
100 描画装置
101 基板
102 電子光学鏡筒
103 チャンバ
105 XYステージ
150 描画部
160 制御回路
170 真空ポンプ
200 電子ビーム
20 opening part 30 door 40 side surface 100 drawing device 101 substrate 102 electron optical lens barrel 103 chamber 105 XY stage 150 drawing part 160 control circuit 170 vacuum pump 200 electron beam

Claims (5)

描画対象基板を載置するステージと、
前記ステージを内部に配置し、1つの側面に前記ステージの搬出入用の開口部が形成され、前記開口部が扉で塞がれたチャンバと、
前記チャンバ上に配置された電子光学鏡筒と、
を備え、
前記扉の外面及び内面は、前記扉の上端または下端より前記上端と前記下端の間が前記チャンバの外方に突出することを特徴とする荷電粒子ビーム描画装置。
A stage for mounting the drawing target substrate,
A chamber in which the stage is disposed inside, an opening for loading and unloading the stage is formed on one side surface, and the opening is closed by a door;
An electron optical lens barrel arranged on the chamber,
Equipped with
The charged particle beam drawing apparatus according to claim 1, wherein an outer surface and an inner surface of the door project outward from the chamber between an upper end and a lower end of the door than an upper end or a lower end of the door.
前記扉の上半側の外面及び内面が、下方ほど外方に位置する斜面となっており、下半側の外面及び内面が、上方ほど外方に位置する斜面となっていることを特徴とする請求項1に記載の荷電粒子ビーム描画装置。 The outer surface and the inner surface of the upper half side of the door are slopes that are located outward toward the lower side, and the outer surface and the inner surface of the lower half side are slopes that are located outward toward the upper side. The charged particle beam drawing apparatus according to claim 1. 前記扉は、前記チャンバの壁面よりも薄いことを特徴とする請求項1又は2に記載の荷電粒子ビーム描画装置。 The charged particle beam drawing apparatus according to claim 1, wherein the door is thinner than a wall surface of the chamber. 前記扉の外面に強度調整用プレートが取り付けられていることを特徴とする請求項1乃至3のいずれか1項に記載の荷電粒子ビーム描画装置。 The charged particle beam drawing apparatus according to any one of claims 1 to 3, wherein a strength adjusting plate is attached to an outer surface of the door. 前記扉は、前記扉の左端または右端より前記左端と前記右端の間が前記チャンバの外方に突出していることを特徴とする請求項1に記載の荷電粒子ビーム描画装置。 The charged particle beam drawing apparatus according to claim 1, wherein the door protrudes outward of the chamber between a left end and a right end of the door from a left end or a right end of the door.
JP2019010353A 2019-01-24 2019-01-24 Charged particle beam drawing device Active JP7063281B2 (en)

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