JP2020109823A5 - - Google Patents
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- JP2020109823A5 JP2020109823A5 JP2019161407A JP2019161407A JP2020109823A5 JP 2020109823 A5 JP2020109823 A5 JP 2020109823A5 JP 2019161407 A JP2019161407 A JP 2019161407A JP 2019161407 A JP2019161407 A JP 2019161407A JP 2020109823 A5 JP2020109823 A5 JP 2020109823A5
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- 239000000463 material Substances 0.000 claims 88
- 239000000203 mixture Substances 0.000 claims 31
- 238000004519 manufacturing process Methods 0.000 claims 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 26
- 125000000623 heterocyclic group Chemical group 0.000 claims 19
- 229910052710 silicon Inorganic materials 0.000 claims 19
- 238000002360 preparation method Methods 0.000 claims 17
- 238000000034 method Methods 0.000 claims 15
- 150000001875 compounds Chemical class 0.000 claims 10
- 238000002156 mixing Methods 0.000 claims 8
- 229910052799 carbon Inorganic materials 0.000 claims 7
- 125000004432 carbon atoms Chemical group C* 0.000 claims 7
- 229910052757 nitrogen Inorganic materials 0.000 claims 7
- 125000004433 nitrogen atoms Chemical group N* 0.000 claims 7
- 125000004429 atoms Chemical group 0.000 claims 6
- 125000004430 oxygen atoms Chemical group O* 0.000 claims 6
- 125000001424 substituent group Chemical group 0.000 claims 6
- 229910052717 sulfur Inorganic materials 0.000 claims 6
- 125000004434 sulfur atoms Chemical group 0.000 claims 6
- 229910052796 boron Inorganic materials 0.000 claims 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 5
- 125000004437 phosphorous atoms Chemical group 0.000 claims 5
- 229910052698 phosphorus Inorganic materials 0.000 claims 5
- 229910052711 selenium Inorganic materials 0.000 claims 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 5
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims 2
- TXCDCPKCNAJMEE-UHFFFAOYSA-N Dibenzofuran Chemical compound C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 2
- 239000012044 organic layer Substances 0.000 claims 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims 2
- MYKQKWIPLZEVOW-UHFFFAOYSA-N 11H-benzo[a]carbazole Chemical compound C1=CC2=CC=CC=C2C2=C1C1=CC=CC=C1N2 MYKQKWIPLZEVOW-UHFFFAOYSA-N 0.000 claims 1
- IYYZUPMFVPLQIF-UHFFFAOYSA-N Dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 claims 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N Pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000003277 amino group Chemical group 0.000 claims 1
- 230000003078 antioxidant Effects 0.000 claims 1
- 239000003963 antioxidant agent Substances 0.000 claims 1
- 125000004104 aryloxy group Chemical group 0.000 claims 1
- 125000002619 bicyclic group Chemical group 0.000 claims 1
- 125000000000 cycloalkoxy group Chemical group 0.000 claims 1
- 125000000753 cycloalkyl group Chemical group 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- 150000002391 heterocyclic compounds Chemical class 0.000 claims 1
- 230000005525 hole transport Effects 0.000 claims 1
- WUNJCKOTXFSWBK-UHFFFAOYSA-N indeno[2,1-a]carbazole Chemical compound C1=CC=C2C=C3C4=NC5=CC=CC=C5C4=CC=C3C2=C1 WUNJCKOTXFSWBK-UHFFFAOYSA-N 0.000 claims 1
- VVVPGLRKXQSQSZ-UHFFFAOYSA-N indolo[3,2-c]carbazole Chemical compound C1=CC=CC2=NC3=C4C5=CC=CC=C5N=C4C=CC3=C21 VVVPGLRKXQSQSZ-UHFFFAOYSA-N 0.000 claims 1
- 125000002950 monocyclic group Chemical group 0.000 claims 1
- 238000000746 purification Methods 0.000 claims 1
- 150000003384 small molecules Chemical class 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- BSUNTQCMCCQSQH-UHFFFAOYSA-N triazine Chemical compound C1=CN=NN=C1.C1=CN=NN=C1 BSUNTQCMCCQSQH-UHFFFAOYSA-N 0.000 claims 1
Claims (18)
ホスト材料を準備するホスト材料準備工程と、
環内に、炭素原子と、ホウ素原子、ケイ素原子、窒素原子、リン原子、酸素原子、硫黄原子及びセレン原子からなる群より選ばれる少なくとも１種とを含む複素環基を有する化合物を含むゲスト材料を準備するゲスト材料準備工程と、
前記ホスト材料と前記ゲスト材料とを、前記ホスト材料に含まれるケイ素原子及び前記ゲスト材料に含まれるケイ素原子の総量が０質量ｐｐｍを超え２８質量ｐｐｍ以下となる配合比で混合して、発光素子用組成物を得る製造工程と、
を含み、
前記ホスト材料準備工程は、
ケイ素原子の含有量が２４質量ｐｐｍ以上のホスト材料を準備する工程（Ａ−１）と、
前記工程（Ａ−１）で準備した前記ホスト材料の少なくとも一部を精製して、ケイ素原子の含有量が２３質量ｐｐｍ以下のホスト材料を得る工程（Ａ−２）と、
を含む、発光素子用組成物の製造方法。 A method for producing a composition for a light emitting device, which is a mixture of a host material and a guest material.
Host material preparation process and host material preparation process
A guest material containing a compound having a heterocyclic group containing a carbon atom and at least one selected from the group consisting of a boron atom, a silicon atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom and a selenium atom in a ring. To prepare the guest material preparation process and
The host material and the guest material are mixed at a blending ratio such that the total amount of silicon atoms contained in the host material and silicon atoms contained in the guest material exceeds 0 mass ppm and 28 mass ppm or less, and the light emitting element is used. The manufacturing process to obtain the composition for use,
Including
The host material preparation process is
The step (A-1) of preparing a host material having a silicon atom content of 24 mass ppm or more, and
A step (A-2) of purifying at least a part of the host material prepared in the step (A-1) to obtain a host material having a silicon atom content of 23 mass ppm or less.
A method for producing a composition for a light emitting device, which comprises.
ホスト材料を準備するホスト材料準備工程と、
前記ホスト材料に対するゲスト材料の配合比を決定する決定工程と、
環内に、炭素原子と、ホウ素原子、ケイ素原子、窒素原子、リン原子、酸素原子、硫黄原子及びセレン原子からなる群より選ばれる少なくとも１種とを含む複素環基を有する化合物を含み、前記配合比で前記ホスト材料と混合したとき前記ホスト材料及び前記ゲスト材料の総量に対する前記ホスト材料に含まれるケイ素原子及び前記ゲスト材料に含まれるケイ素原子の総量が０質量ｐｐｍを超え２８質量ｐｐｍ以下となる、ゲスト材料を準備するゲスト材料準備工程と、
前記ホスト材料と前記ゲスト材料とを前記配合比で混合して、発光素子用組成物を得る製造工程と、
を含み、
前記ホスト材料準備工程は、
ケイ素原子の含有量が２４質量ｐｐｍ以上のホスト材料を準備する工程（Ａ−１）と、
前記工程（Ａ−１）で準備した前記ホスト材料の少なくとも一部を精製して、ケイ素原子の含有量が２３質量ｐｐｍ以下のホスト材料を得る工程（Ａ−２）と、
を含む、発光素子用組成物の製造方法。 A method for producing a composition for a light emitting device, which is a mixture of a host material and a guest material.
Host material preparation process and host material preparation process
A determination step for determining the mixing ratio of the guest material to the host material, and
A compound having a heterocyclic group containing a carbon atom and at least one selected from the group consisting of a boron atom, a silicon atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom and a selenium atom is contained in the ring. When mixed with the host material in a compounding ratio, the total amount of silicon atoms contained in the host material and the silicon atom contained in the guest material with respect to the total amount of the host material and the guest material is more than 0 mass ppm and 28 mass ppm or less. The guest material preparation process to prepare the guest material,
A manufacturing process for obtaining a composition for a light emitting device by mixing the host material and the guest material at the compounding ratio.
Including
The host material preparation process is
The step (A-1) of preparing a host material having a silicon atom content of 24 mass ppm or more, and
A step (A-2) of purifying at least a part of the host material prepared in the step (A-1) to obtain a host material having a silicon atom content of 23 mass ppm or less.
A method for producing a composition for a light emitting device, which comprises.
環内に、炭素原子と、ホウ素原子、ケイ素原子、窒素原子、リン原子、酸素原子、硫黄原子及びセレン原子からなる群より選ばれる少なくとも１種とを含む複素環基を有する化合物を含むゲスト材料を準備するゲスト材料準備工程と、
前記ゲスト材料に対するホスト材料の配合比を決定する決定工程と、
前記配合比で前記ゲスト材料と混合したとき前記ホスト材料及び前記ゲスト材料の総量に対する前記ホスト材料に含まれるケイ素原子及び前記ゲスト材料に含まれるケイ素原子の総量が０質量ｐｐｍを超え２８質量ｐｐｍ以下となる、ホスト材料を準備するホスト材料準備工程と、
前記ゲスト材料と前記ホスト材料とを前記配合比で混合して、発光素子用組成物を得る製造工程と、
を含み、
前記ホスト材料準備工程は、
ケイ素原子の含有量が２４質量ｐｐｍ以上のホスト材料を準備する工程（Ａ−１）と、
前記工程（Ａ−１）で準備した前記ホスト材料の少なくとも一部を精製して、ケイ素原子の含有量が２３質量ｐｐｍ以下のホスト材料を得る工程（Ａ−２）と、
を含む、発光素子用組成物の製造方法。 A method for producing a composition for a light emitting device, which is a mixture of a host material and a guest material.
A guest material containing a compound having a heterocyclic group containing a carbon atom and at least one selected from the group consisting of a boron atom, a silicon atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom and a selenium atom in a ring. To prepare the guest material preparation process and
A determination step for determining the mixing ratio of the host material to the guest material, and
When mixed with the guest material at the compounding ratio, the total amount of silicon atoms contained in the host material and the silicon atom contained in the guest material with respect to the total amount of the host material and the guest material exceeds 0 mass ppm and 28 mass ppm or less. The host material preparation process to prepare the host material,
A manufacturing process for obtaining a composition for a light emitting device by mixing the guest material and the host material at the compounding ratio.
Including
The host material preparation process is
The step (A-1) of preparing a host material having a silicon atom content of 24 mass ppm or more, and
A step (A-2) of purifying at least a part of the host material prepared in the step (A-1) to obtain a host material having a silicon atom content of 23 mass ppm or less.
A method for producing a composition for a light emitting device, which comprises.
ホスト材料を準備するホスト材料準備工程と、
ゲスト材料として環内に、炭素原子と、ホウ素原子、ケイ素原子、窒素原子、リン原子、酸素原子、硫黄原子及びセレン原子からなる群より選ばれる少なくとも１種とを含む複素環基を有する化合物を準備するゲスト材料準備工程と、
前記ホスト材料と前記ゲスト材料との配合比を決定する決定工程と、
前記配合比で前記ホスト材料と前記ゲスト材料とを混合したとき、前記ホスト材料及び前記ゲスト材料の総量に対する前記ホスト材料に含まれるケイ素原子及び前記ゲスト材料に含まれるケイ素原子の総量が０質量ｐｐｍを超え２８質量ｐｐｍ以下となるように、前記ホスト材料及び前記複素環基を有する化合物の少なくとも一部を精製する精製工程と、
前記ホスト材料と前記複素環基を有する化合物を含む前記ゲスト材料とを前記配合比で混合して、発光素子用組成物を得る製造工程と、
を含み、
前記ホスト材料準備工程は、
ケイ素原子の含有量が２４質量ｐｐｍ以上のホスト材料を準備する工程（Ａ−１）と、
前記工程（Ａ−１）で準備した前記ホスト材料の少なくとも一部を精製して、ケイ素原子の含有量が２３質量ｐｐｍ以下のホスト材料を得る工程（Ａ−２）と、
を含む、発光素子用組成物の製造方法。 A method for producing a composition for a light emitting device, which is a mixture of a host material and a guest material.
Host material preparation process and host material preparation process
As a guest material, a compound having a heterocyclic group containing a carbon atom and at least one selected from the group consisting of a boron atom, a silicon atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom and a selenium atom in a ring is used. Guest material preparation process to prepare and
A determination step for determining the blending ratio of the host material and the guest material, and
When the host material and the guest material are mixed at the compounding ratio, the total amount of silicon atoms contained in the host material and the silicon atom contained in the guest material relative to the total amount of the host material and the guest material is 0 mass ppm. A purification step of purifying at least a part of the host material and the compound having a heterocyclic group so as to exceed 28 mass ppm or less.
A manufacturing step of mixing the host material and the guest material containing the compound having a heterocyclic group at the compounding ratio to obtain a composition for a light emitting device.
Including
The host material preparation process is
The step (A-1) of preparing a host material having a silicon atom content of 24 mass ppm or more, and
A step (A-2) of purifying at least a part of the host material prepared in the step (A-1) to obtain a host material having a silicon atom content of 23 mass ppm or less.
A method for producing a composition for a light emitting device, which comprises.
［式中、
ｎ１Ｂは、０以上の整数を表す。
Ａｒ１Ｂは、環内に、炭素原子と、ホウ素原子、ケイ素原子、窒素原子、リン原子、酸素原子、硫黄原子及びセレン原子からなる群より選ばれる少なくとも１種とを含む複素環を有する化合物から、前記複素環を構成する原子に直接結合する水素原子ｎ１Ｂ個以上を除いた基を表し、この基は置換基を有していてもよい。該置換基が複数存在する場合、それらは同一でも異なっていてもよく、互いに結合して、それぞれが結合する原子とともに環を形成していてもよい。
Ｒ１Ｂは、ハロゲン原子、アルキル基、シクロアルキル基、アルコキシ基、シクロアルコキシ基、アリールオキシ基、アリール基、１価の複素環基又は置換アミノ基を表し、これらの基は置換基を有していてもよい。該置換基が複数存在する場合、それらは同一でも異なっていてもよく、互いに結合して、それぞれが結合する原子とともに環を形成していてもよい。Ｒ１Ｂが複数存在する場合、それらは同一でも異なっていてもよく、互いに結合して、それぞれが結合する原子とともに環を形成していてもよい。］ The method for producing a composition for a light emitting element according to claim 10, wherein the compound having a heterocyclic group is a compound represented by the formula (FB).
[During the ceremony,
n 1B represents an integer of 0 or more.
Ar 1B is composed of a compound having a complex ring containing a carbon atom and at least one selected from the group consisting of a boron atom, a silicon atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom and a selenium atom in a ring. , Representing a group excluding n 1B or more hydrogen atoms directly bonded to the atom constituting the heterocycle, and this group may have a substituent. When a plurality of the substituents are present, they may be the same or different, or they may be bonded to each other to form a ring with the atom to which each is bonded.
R 1B represents a halogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an aryl group, a monovalent heterocyclic group or a substituted amino group, and these groups have a substituent. May be. When a plurality of the substituents are present, they may be the same or different, or they may be bonded to each other to form a ring with the atom to which each is bonded. When a plurality of R1Bs are present, they may be the same or different, or they may be bonded to each other to form a ring with the atoms to which they are bonded. ]
請求項１〜１７のいずれか一項に記載の製造方法により製造された発光素子用組成物により、前記有機層を形成させる工程を含む、発光素子の製造方法。 A method for manufacturing a light emitting device, comprising an anode, a cathode, and an organic layer provided between the anode and the cathode.
A method for manufacturing a light emitting device, which comprises a step of forming the organic layer with the composition for a light emitting device manufactured by the manufacturing method according to any one of claims 1 to 17.
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| JP2018247672A Division JP6585273B1 (en) | 2018-12-28 | 2018-12-28 | Composition for light emitting device and method for producing light emitting device |
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| JP2005041982A (en) * | 2003-05-29 | 2005-02-17 | Seiko Epson Corp | Light emitting material, method of purifying light emitting material and method of manufacturing light emitting layer |
| EP1794218B1 (en) * | 2004-10-01 | 2020-05-13 | Merck Patent GmbH | Electronic devices containing organic semi-conductors |
| CN101918512B (en) * | 2007-06-01 | 2014-09-24 | E.I.内穆尔杜邦公司 | Green luminescent materials |
| WO2014092083A1 (en) * | 2012-12-10 | 2014-06-19 | 出光興産株式会社 | Organic electroluminescent element |
| KR102345329B1 (en) * | 2016-01-29 | 2022-01-03 | 스미또모 가가꾸 가부시키가이샤 | Composition, phosphorescent compound, and light-emitting element |
| JP6913079B2 (en) * | 2016-03-29 | 2021-08-04 | 住友化学株式会社 | Light emitting element |
| JP6826930B2 (en) * | 2016-03-29 | 2021-02-10 | 住友化学株式会社 | Light emitting element |
| JPWO2018061421A1 (en) * | 2016-09-28 | 2018-09-27 | 住友化学株式会社 | Composition and light emitting device |
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