JP2020096069A - Heater assembly - Google Patents

Abstract

To provide a heater assembly that enables quick and precise temperature control for rapid heating and rapid cooling, and also enables uniform heating over the entire area through a simple structure as the degree of integration of semiconductor packages increases.SOLUTION: A heater assembly to be mounted on a bonding device for manufacturing semiconductor elements includes a heating plate 100 that includes a first main surface 100U and a second main surface 100B, and in which a processed semiconductor structure PS is releasably supported on the first main surface, an electrically insulating body 200 arranged on the second main surface side of the heating plate and supporting the heating plate, and at least two busbars 300 disposed between the heating plate and the electrically insulating body to release heat from the heating plate and apply power of the heating plate.SELECTED DRAWING: Figure 1A

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a heater assembly capable of controlling temperature quickly and accurately when manufacturing a semiconductor package.

In general, what must be accompanied by the higher functionality of electronic products is the reduction of the size, weight, and size of semiconductor chips through the improvement of the degree of integration. A semiconductor package for high integration of the semiconductor chip also has a limit in lightness, thinness, shortness, and size reduction only by the conventional wire bonding method. Therefore, recently, without using wire bonding, after forming an electrode member such as a solder bump or a pad on a pad which is an input/output terminal of a semiconductor chip, the semiconductor chip is wired to a carrier substrate or a tape wiring substrate. A method of performing a wiring process by a method of bonding to a substrate using the electrode member or a method of directly laminating a semiconductor chip on another semiconductor chip is widely used. As a typical example, there are a flip chip bonding technique in which the semiconductor chip is bonded to a substrate in an inverted state, and a three-dimensional laminating technique for each semiconductor chip using a through silicon via (TSV). is there.

In the semiconductor package technology using flip chip bonding and TSV, the bonding of each electrode is performed by a thermocompression bonding method or a laser pressure bonding method. Of these, the thermocompression bonding method is performed by a heater assembly including a pressurizing head having a heater built in the pressurizing arm and having a suction hole for adsorbing a semiconductor chip at the tip of the pressurizing arm.

For example, in the flip chip bonding process, the heater assembly aligns a flip chip to be bonded to a predetermined position on a wiring board by a position alignment device such as an optical recognition device, and then lowers a pressing arm to move the flip chip. By heating the heater inside the pressure arm while pressing the chip onto the wiring board and heating the flip chip while heat is conducted to the pressure head side, by maintaining such a state for a predetermined time. The electrode pads of the flip chip are bonded to the wiring board. If necessary, a thermosetting resin may be applied between the flip chip and the substrate, and the thermosetting resin may be cured during the thermocompression bonding to protect the bonding structure of the flip chip. is there. After that, the temperature of the heater of the pressure head is lowered and the pressure arm is raised so that the substrate can be pulled out.

Also in the semiconductor packaging process using the TSV, the through electrodes exposed on the surface of each semiconductor chip are aligned so as to face each other, and then the stacked semiconductor chips are heated to bond the through electrodes to each other. The heater assembly can be used for this.

As the lightness, thinness and shortness of the semiconductor package is continuously required, the distance between the electrodes on the semiconductor chip is minimized, and there is no short circuit in the connection between the electrodes or cracks due to thermal shock. Precise temperature control of the heater assembly is required for certain bonds. Particularly, rapid temperature control for implementing rapid heating and rapid cooling is essential because the distance and height between the electrodes decrease as the integration degree of the semiconductor package increases.

However, in the conventional heater assembly, a linear heater is generally used, and as a result, a heating structure and a cooling structure for heating the heater assembly are complicated, and the heater is quickly heated to a predetermined temperature. Then, it is difficult to obtain a reliable precise temperature profile control that can be rapidly cooled again.

The technical problem to be solved by the present invention is that, as the degree of integration of semiconductor packages is improved, rapid and precise temperature control for rapid heating and rapid cooling is possible, but the total area is increased through a simple structure. It is to provide a heater assembly capable of uniform heating.

According to an embodiment of the present invention, there is provided a heater assembly mounted on a bonding device for manufacturing a semiconductor device, the heater assembly including a first main surface and a second main surface, and a semiconductor structure to be processed on the first main surface. A releasably supported heating plate, an electrically insulating body disposed on the second main surface side of the heating plate and supporting the heating plate, the heating plate and the electrically insulating body A heater assembly may be provided that is disposed between the heating plate and the heating plate and that includes at least two bus bars for discharging heat and applying power to the heating plate. The heating thin film layer formed on the second main surface of the heating plate performs surface phase heating of the heating body formed on the first main surface of the heating plate.

In the embodiment of the present invention, the at least two busbars have a structure extending in a direction parallel to the second main surface of the heating plate, and the two busbars are separated from each other in parallel. Can be included. The electrically insulating body may include a trench portion for accommodating at least a part of a bottom portion of the bus bar, and the at least a portion of the bus bar may be inserted into and supported by the trench portion. The bus bar may include a fastening hole, the electrically insulating body may include a through hole, and the bus bar may be fixed to the electrically insulating body by a fastening member extending through the through hole and the fastening hole. A portion of the upper portion of the bus bar may have a recessed surface that is separated from the second main surface of the heating plate and secures a cooling gas flow path. The busbar may include a metal, a metal alloy, a carbon body or a combination thereof. In one embodiment of the present invention, the bus bar may further include a heat dissipation hole for heat dissipation, a porous body or a heat dissipation fin. The heating plate may be fastened to a portion of the upper portion of the bus bar, or the electrically insulating body may be fastened to a portion of the upper portion of the bus bar.

The heating plate includes at least one first vacuum hole for releasably supporting the processed semiconductor structure, and the at least one first vacuum hole is provided inside the electrically insulating body. At least one first vacuum channel may be included that is in communication with the vacuum hole and is in close contact with the at least one first vacuum hole to maintain airtightness. In one embodiment of the present invention, the heating plate includes at least one cooling hole, and the electrically insulating body includes a cooling gas passage for supplying a cooling gas to the cooling hole. obtain.

The outlet of the cooling gas flow path is separated from the cooling hole of the heating plate, and a part of the cooling gas discharged from the outlet of the cooling gas flow path is transferred to the cooling hole and then heated. Can be transferred onto the first major surface of the touching plate. In an embodiment of the present invention, the outlet of the cooling gas passage may be offset in a direction perpendicular to the cooling hole of the heating plate and the second main surface of the heating plate.

Is disposed between the processed semiconductor structure and the first main surface of the heating plate so as to protect the first main surface of the heating plate, and on the second main surface of the heating plate. The heating plate further includes at least one second vacuum hole for releasably supporting the attach member, and the inside of the electrically insulating body includes: The method may further include at least one second vacuum channel communicating with the at least one second vacuum hole and closely contacting the at least one second vacuum hole to maintain airtightness.

A first trench pattern is formed on the first main surface of the heating plate to expand and flow the cooling gas transmitted from the cooling hole along the first main surface, and at least the trench pattern is formed. The attaching member may cover a part. The trench pattern may be terminated beyond the edge of the attaching member or may extend to the edge of the heating plate.

A second trench pattern may be further formed on the first main surface of the heating plate, the second trench pattern being in communication with the at least one second vacuum hole and being covered and sealed by the attaching member.

In one embodiment of the present invention, for measuring the temperature independently of each other by penetrating the electrically insulating body, contacting the second main surface of the heating plate through the at least two or more bus bars. Of at least two thermocouples of The electrically insulating body includes a single through hole for the thermocouple, and the at least two thermocouples are assembled so that each measuring end has a separation distance within 3 mm from each other. The second main surface may be contacted through the one through hole. The assembled at least two thermocouples may include a multi-ended tube for passing a plurality of thermocouple wires and tying them together.

According to the embodiment of the present invention, a cooling structure of a heating plate is realized by using a bus bar, so that the temperature of the heating element is instantaneously increased and the cooling is rapidly performed, so that precise temperature control can be performed. A heater assembly mounted on the bonding apparatus can be provided.

In addition, according to the embodiment of the present invention, the attachment member disposed on the heating plate is also forcibly cooled independently by the cooling gas during the cooling of the heating plate, so that the heating plate is indirectly cooled. A heater assembly capable of more rapid rapid cooling can be provided as compared with a mechanism in which the attachment member is cooled.

In addition, according to the embodiment of the present invention, by installing the thermocouples used for temperature detection of the heating plate and temperature control of the heating plate therethrough in pairs, any one of the thermocouples may be installed. Even if an abnormality occurs, one other thermocouple enables normal operation, prevents the interruption of the heating process due to the failure of the thermocouple, and the paired thermocouple enables multiple independent measurements in the same measurement part. By obtaining the measured temperature measurement data, the possibility of inaccurate temperature measurement can be minimized and a heater assembly capable of precise heating and cooling can be provided.

FIG. 3 is an exploded perspective view of a heater assembly according to an exemplary embodiment of the present invention viewed from above. FIG. 2 is a bottom perspective exploded view of the heater assembly of FIG. 1a. FIG. 6 is a perspective view illustrating each bus bar having a heat dissipation structure according to various exemplary embodiments of the present invention. FIG. 6 is a perspective view illustrating a thermocouple that contacts a second main surface of a heating plate according to various exemplary embodiments of the present invention and measures temperature independently of each other. It is a figure for demonstrating arrangement|positioning of the thermocouple which can contact the 2nd main surface of the heating plate which concerns on one Example of this invention. FIG. 6 is a diagram for explaining a flow of the cooling gas when the cooling gas is supplied to the second main surface of the heating plate in the embodiment of the present invention. FIG. 6 is a plan view illustrating a heating plate having various types of vacuum holes, vacuum suction channels, cooling holes, and cooling gas discharge channels according to various embodiments of the present invention. FIG. 3 is a perspective view showing a combined state of a heater assembly according to an exemplary embodiment of the present invention. FIG. 3 is a view showing a flip chip bonding apparatus using a heater assembly according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Each embodiment of the present invention is provided to more fully explain the present invention to one of ordinary skill in the art. The following embodiments may be modified in various other forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

Further, the thickness and size of each layer in the following drawings are exaggerated for convenience of explanation and clarity, and the same reference numerals in the drawings refer to the same elements. As used herein, the term "and/or" includes any one and any combination of one or more of the listed items in question.

The terminology used herein is for the purpose of describing particular embodiments and not for limiting the invention. As used herein, a singular form may include the plural forms unless the context clearly dictates otherwise.

Also, as used herein, the terms "comprise" and/or "comprising" refer to the presence of each referenced shape, number, step, action, member, element and/or group thereof. And does not exclude the presence or addition of one or more other shapes, numbers, acts, members, elements and/or groups.

In the present specification, terms such as “first”, “second”, etc. are used to describe various members, parts, regions, layers and/or parts, but these members, parts, regions Obviously, each layer and/or each part must not be limited by these terms. These terms are only used to distinguish one member, component, region, layer or section from another member, component, region, layer or section.

Thus, a "first" member, component, region, layer or section described in detail below may refer to a "second" member, component, region, layer or section without departing from the teachings of the present invention. it can.

In this embodiment, the heater assembly may be a heater mounted on a bonding apparatus for stacking chips or bonding chips on a substrate. For example, the heater assembly may be used in a semiconductor package using a TSV (Through Silicon Via) that connects an upper end chip and a lower end chip with a through electrode. However, it goes without saying that the present invention is not limited to this, and can be applied to various types of bonding apparatuses for bonding chips.

1a is an exploded perspective view of a heater assembly 10 according to an exemplary embodiment of the present invention when viewed from the top, and FIG. 1b is an exploded perspective view of the heater assembly 10 illustrated in FIG. 1a when viewed from the bottom.

1a and 1b disclose a heater assembly 10 used in a bonding apparatus for manufacturing a semiconductor device. The heater assembly 10 may include a heating plate 100, an electrically insulating body 200, and each bus bar 300 disposed between the heating plate 100 and the electrically insulating body 200.

The heating plate 100 includes a first main surface 100U opposite to each other and a second main surface 100B facing the first main surface 100U. Both the first major surface 100U and the second major surface 100B may have an electrically insulating surface. To this end, the heating plate 100 can be an electrical insulator. In another embodiment, the heating plate 100 is a conductor, and an insulating layer such as SiO ₂ or Al ₂ O ₃ is formed on the surfaces of the first main surface 100U and the second main surface 100B of the conductor. The insulating film may be formed.

The heating plate 100 should be capable of rapid heating and cooling at the same time, and preferably provides a uniform amount of heat to the entire contact surface of the semiconductor structure PS to be processed, and thus has a high thermal conductivity. It is preferable to include the heat generating body 120 formed of a material that is less likely to be thermally deformed. In one embodiment, the heat generating body 120 is made of aluminum nitride (AlN), silicon carbide (SiC), sialon, beryllium oxide (BeO), silicon nitride (Si ₃ N ₄ ), or a mixture thereof. May be included. However, this is merely an example, and the present invention is not limited thereto. For example, the heat generating body 120 may include, by way of non-limiting example, a ceramic such as glass, quartz, aluminum oxide, calcium fluoride or yttrium oxide, which is not suitable for high temperature operation, but is flexible. If elasticity is required, a thermosetting polymer material such as polyimide may be included.

The first main surface 100U of the heat generating body 120 contacts the processed semiconductor structure PS on which the bonding process is performed, transfers heat to the processed semiconductor structure PS, and applies pressure. The processed semiconductor structure PS may be a substrate such as a semiconductor chip, a semiconductor package, or a semiconductor wafer, for example. Further, these processed semiconductor structures can be bonded to other semiconductor structures, for example, substrates such as semiconductor chips, semiconductor packages, semiconductor wafers, lead frames or interposers. For example, stacking processes such as chip-to-chip, chip-to-wafer, and wafer-to-wafer bonding are performed, but each of these examples is merely an example, and the present invention is not limited thereto. There is no such thing.

A heat generating thin film layer 110 for heating the heat generating body 120 may be formed on the second main surface 100B of the heat generating body 120. The heat generating thin film layer 110 may be heated by Joule heat according to the applied power signal. Since the heat generating thin film layer 110 is formed directly on the second main surface 100B of the heating plate 100 through the thin film forming process, it is possible to realize two-dimensional surface phase heat generation. The heat generating thin film layer 110 is a heat source of heat transferred to the semiconductor structure PS to be processed, and is capable of rapidly heating and cooling at a controlled temperature for bonding or manufacturing a semiconductor chip or package. Is. Such high-speed heating and high-speed cooling has an advantage of minimizing the mass of the heater. In one embodiment, the heat generating thin film layer 110 has a thickness of several hundred nm to 5 μm or less to enable rapid temperature control and smooth heat transfer.

The heat generating thin film layer 110 is a conductive thin film capable of instantaneously generating heat due to resistance when power is applied, and may include a conductive metal oxide, a conductive metal nitride, or a carbon-based material. For example, as the conductive metal oxide, an ITO (In ₂ O ₃ :SnO ₂ =90:10, indium tin oxide) conductive film or FTO (F-doped SnO ₂ :tin containing fluorine (F)) is used. An oxide conductive film may be used, but the present invention is not limited thereto, and various kinds of conductive films may be used. The heat generating thin film layer 110 includes, in addition to constituent materials such as metals forming a main matrix, non-metals such as boron (B), fluorine (F) or chlorine (Cl), transition metals such as titanium and hafnium, and aluminum ( It may further include a doping element such as another metal such as Al) or magnesium (Mg), or a quasi metal such as silicon (Si).

Any of these materials can be used as long as it can generate heat in the temperature range of 80°C to 800°C. Preferably, the exothermic thin film layer 110 may include the FTO, which is excellent in electrical, chemical and mechanical performance even under high temperature heat generation, without a rare earth element.

Since the heat generating thin film layer 110 generates heat from the entire two-dimensional planar structure, unlike a conventional linear heating member using a coil heating, a patterned heat source such as a heating wire, or a conductive fiber body such as a carbon fiber. No heating, no dead zone or thermal gradient. Generally, a buried solid or surface coating agent must be applied to each of the above-mentioned conventional heat sources in order to overcome the temperature deviation between the dead zone and the heating member, and these materials may have different structures or materials. Therefore, additional steps such as separate fastening members or high temperature sintering may be required for reliable bonding and joining. However, since the heating thin film layer 110 can be directly formed on the second main surface 100B of the heating plate 100 using a chemical vapor deposition method, a sputtering method, a thermal decomposition method, or a vapor deposition method such as a spray method, the heating plate 100. A post-treatment process such as a fastening structure or sintering for separate joining between the heat generating thin film layer and the heat generating thin film layer is not required.

The exothermic thin film layer 110 can increase its temperature instantaneously and can be rapidly cooled by contact with a gas, for example, ambient air or a vapor phase refrigerant. For example, comparing the heat quantity equation between the heating thin film layer 110 having a two-dimensional form (coating film) and the aluminum heating element of the meander coil resistance wire, that is, Q=cmΔt, the same area is obtained. When the same amount of heat Q is accumulated, the mass (m) of the heat generating thin film layer 110 is smaller than the mass (m) of the aluminum heating element, and the specific heat of the heat generating thin film layer 110 (c, tin/indium=0.05). Is smaller than the specific heat of the aluminum heating element (c: aluminum=0.21), the temperature change (Δt) of the heating thin film layer is the temperature change of the aluminum heating element with reference to the same amount of heat for the same area. It can be improved much more than (Δt). After all, the heating thin film layer having a two-dimensional structure can raise the temperature instantaneously as compared with a bulky conventional heating element having a three-dimensional structure, and conversely, it can be cooled more quickly when exposed to a cooling gas. It also has advantages.

In one embodiment, a protective layer (not shown) may be further formed on the heat generating thin film layer 110. In addition, the protective layer has electrical insulation and may include at least one of an impurity diffusion barrier layer, a sealing layer, an antifouling layer, and a moistureproof layer, or a laminated structure of two or more. The protective layer may be an insulating layer that does not form a compound with the underlying heat generating thin film layer 110. For example, the protective layer may include silicon oxide, glass, aluminum oxide or magnesium oxide.

In the embodiment of the present invention, the four heating units 120 are disposed on both ends of the heating body 120 on the same vertical line as the fastening holes 310 of the bus bars 300 and the through holes (not shown) of the electrically insulating body 200. The plate assembly hole 101 may be formed. In another embodiment, two heating plate assembly holes 101 may be formed at the central end of the heat generating body 120.

In the heating plate 100, each bus bar 300, and the electrically insulating body 200, a fastening member 900 described later has a heating plate assembly hole 101, a fastening hole 310 of each bus bar 300, and a through hole of the electrically insulating body 200 (not shown). Can be fixed to each other by piercing through. In another embodiment, the heating plate 100 and each bus bar 300 are fixed upward by the fastening member 900, and the bus bar 300 and the electrically insulating body 200 are fixed downward by another fastening member, so that the heating plate 100 and the bus bar 300 are fixed. The touching plate 100, the bus bars 300, and the electrically insulating body 200 may be fixed to each other.

In the embodiment of the present invention, the heating plate 100 has vacuum holes 120VH1 and 120VH2 in the diagonal direction of the heating body 120 so as to releasably support at least one of the semiconductor structure PS to be processed and the attachment member DA. 120 VH3 may be formed. The vacuum holes 120VH1, 120VH2, 120VH3 of the heat generating body 120 are located on the vertical lines with the vacuum holes 200VH1, 200VH2, 200VH3 of the electrically insulating body 200 described later and the vacuum holes 400VH1, 400VH2, 400VH3 of the base part 400 described later, and are vacuum. Communication may be formed for inhalation. As a result, the attachment member DA or the semiconductor structure PS to be processed can be brought into close contact with the heating plate 100 by the vacuum suction.

The vacuum holes 400VH2, 400VH3 among the vacuum holes 400VH1, 400VH2, 400VH3 are respectively connected to the vacuum suction flow path VPL having a trench pattern, and the attachment member DA or the semiconductor structure PS to be processed is sucked through the vacuum suction flow path VPL. The area (hereinafter, referred to as a suction area) is increased, and the attachment member DA or the semiconductor structure PS to be processed can be brought into stable contact with the heating plate 100. For example, by providing a large suction area through the vacuum suction channel VPL, it is possible to prevent the attachment member DA or the semiconductor structure PS to be processed from swaying due to the cooling gas discharged from the cooling hole 120CH. The vacuum suction flow path VPL may be formed on the heat generating body 120 by being recessed in a trench pattern shape. Even if the attachment member DA or the processed semiconductor structure PS adheres to the heating plate 100, a trench pattern space is formed between the attachment member DA or the processed semiconductor structure PS and the heating plate 100. As a result, the suction area of the heating plate 100 can be increased.

In one embodiment, the size of the attachment member DA may be the same as the size of the heating plate 100, but the present invention is not limited thereto. For example, the size of the attachment member DA may be smaller than the size of the heating plate 100.

In the embodiment of the present invention, at least one cooling hole 120CH of the heat generating body 120 may be formed. At this time, the cooling hole 120CH of the heat generating main body 120 is arranged vertically offset from the cooling hole 200CH of the electrically insulating body 200, which will be described later, in order to cool the heating member 100 and the attachment member DA quickly. obtain. The cooling gas (or low-temperature oxygen, argon, or nitrogen) discharged through the cooling hole 200CH of the electrically insulating body 200, which will be described later, temporarily collides with the second main surface 100B of the heating plate 100 and the heating plate. The heating plate 100 may be cooled by spreading in a space between the insulating body 100 and the electrically insulating body 200 and discharging the heating plate 100 to the outside of the heating assembly 10. The cooling gas may cool the heating plate 100 by exposing the space S between the heating plate 100 and the electrically insulating body 200 to the surroundings. Next, a part of the cooling gas that rapidly flows in the space between the heating plate 100 and the electrically insulating body 200 may be discharged through the cooling hole 120CH of the heat generating body 120. At this time, the cooling holes 120CH are connected to the cooling gas discharge passages CPL each having a trench pattern, and the attach member DA can be cooled while a part of the cooling gas flows through the cooling gas discharge passages CPL. ..

The cooling gas discharge flow path CPL may be formed in the heat generating main body 120 by being recessed in a trench pattern shape, similarly to the vacuum suction flow path VPL. Even if the attachment member DA is in close contact with the heating plate 100, a space having a trench pattern is formed between the attachment member DA and the heating plate 100, so that the cooling gas moves through the space. Can be discharged. Various formations of the vacuum holes 120VH2, 120VH3, the vacuum suction passage VPL, the cooling hole 120CH, and the cooling gas discharge passage CPL of the heat generating body 120 will be described with reference to FIGS. 6a to 6e below.

The electrically insulating body 200, which is disposed on the second main surface 100B of the heating plate 100 and supports the heating plate 100, is fastened to the rear end of the electrically insulating body 200 including the heating thin film layer 110. The heating plate 100 may be stably supported while being electrically insulated from the base unit 400. The electrically insulating body 200 may be a ceramic molded body having high strength such as aluminum oxide.

In one embodiment, the electrically insulating body 200 has a trench part 200TR for accommodating at least a part of a bottom part of the bus bar 300 described later, and the at least part of the bus bar 300 may be inserted into the trench part 200TR. .. Further, at least one of the electrically insulating body 200 communicates with the vacuum holes 120VH1, 120VH2, 120VH3 of the heating plate 100 and is in close contact with the vacuum holes 120VH1, 120VH2, 120VH3 of the heating plate 100 to maintain airtightness. One or more vacuum holes 200VH1, 200VH2, 200VH3 may be formed. At this time, the vacuum holes 200VH1, 200VH2, 200VH3 may have a protruding shape.

In one embodiment, a support protrusion 210 may be formed on the upper surface of the electrically insulating body 200 to maintain a distance from the heat generating thin film layer 110. The support protrusions 210 are four support protrusions that are spaced apart from each other at the corners of the upper surface of the electrically insulating body 200. Since the separated space S is formed between the support protrusions 210, the cooling gas can flow in four directions (front, rear, left and right) of the electrically insulating body 200.

In an embodiment, the cooling hole 200CH may be formed in the electrically insulating body 200 at a position different from the vacuum holes 200VH1, 200VH2, 200VH3. In addition, in order to supply the cooling gas into the space S between the heating plate 100 and the electrically insulating body 200, the cooling hole 200CH may be formed so as not to be in close contact with the heating plate 100.

Further, the outlets of the cooling holes 200CH of the electrically insulating body 200 are offset from each other by the cooling holes 120CH of the heating plate 100 on a vertical line, and one of the cooling gas discharged from the outlets of the cooling holes 200CH of the electrically insulating body 200. The parts may be transferred to the cooling holes 120CH of the heating plate 100 and then transferred to the first main surface 100U of the heating plate 100. When the outlet of the cooling hole 200CH of the electrically insulating body 200 and the cooling hole 120CH of the heating plate 100 are aligned with each other without being offset on a vertical line, the outlet of the cooling hole 200CH of the electrically insulating body 200 is The pressure of the ejected cooling gas may be directly transmitted to the attaching member DA via the cooling hole 120CH of the heating plate 100, and the attaching member DA may be detached from the surface of the heating plate 100.

In one embodiment, the electrically insulating body 200 includes at least one single through hole 200TCH for the thermocouple, and the measurement ends of the at least two thermocouples have a separation distance of, for example, within 3 mm from each other. As such, the second main surface 100B of the heating plate 100 may be contacted through the single through hole 200THC for the thermocouple.

Referring to FIGS. 1a and 1b, a single through hole 200TCH for a thermocouple is formed in the electrically insulating body 200, but the present invention is not limited thereto, and vacuum holes 200VH1, 200VH2, A plurality of single through holes for thermocouples 200TCH may be formed at positions different from the 200VH3 and the cooling holes 200CH.

In some embodiments, the support protrusion 210 on the electrically insulating body 200 forms a space S between the heating plate 100 and the electrically insulating body 200, and cools the space S through the cooling hole 200CH. When the gas is supplied, a part of the cooling gas is transferred to the cooling holes 120CH of the heating plate 100, and the other part of the cooling gas that has cooled the heating plate 100 is discharged through an outlet (not shown). Can be discharged to the outside. The discharge port is formed on a side surface of the spaced space S when the spaced space S is formed between the heating plate 100 and the electrically insulated body 200 by the support protrusion 210 on the electrically insulated body 200. Is.

In the embodiment of the present invention, each bus bar 300 disposed between the heating plate 100 and the electrically insulating body 200 receives power signals having different polarities to supply power to the heating plate 100. Can be applied. Although each bus bar 300 is an electrical conductor, it can be used as a heat radiating body that promotes heat dissipation during cooling of the heating plate 100. Therefore, each bus bar 300 may be formed of a metal such as aluminum, a metal alloy such as invar (Fe—Ni alloy), a carbon-based material such as graphite, or a conductive fiber body. It is not limited to this. In an embodiment in which the heating plate 100 is heated by the heating thin film layer 110, at least a part of each bus bar 300 may be pressed onto the heating thin film layer 110 to apply a power signal to the heating thin film layer 110.

In one embodiment, each bus bar 300 has a structure extending in a direction parallel to the second major surface 100B of the heating plate 100, and may include two bus bars 300 spaced apart from each other in parallel. Each bus bar 300 has a rigid body shape. In one embodiment, the electrically insulating body 200 may include a trench part 200TR for receiving at least a part of the bottom of each bus bar 300. Further, at least a portion of the bus bar 300 may be inserted into and supported by the trench part 200TR.

The bus bar 300 may have at least one fastening hole 310, 320, 330. In one embodiment, each fastening hole is at least one of a first fastening hole for fastening the heating plate 100 to the bus bar 300 and a second fastening hole for fastening the bus bar 300 to the electrically insulating body 200. Can be included. In one embodiment, each bus bar 300 may be fastened to the electrically insulating body 200, and the heating plate 100 may be fixed by each bus bar 300. In this case, when the bus bar 300 is fastened to the electrically insulating body 200, a through hole (not shown) formed in the electrically insulating body 200 and a fastening member passing through a second fastening hole of the bus bar 300, for example, a bus bar by a bolt. The heating plate 300 may be fixed to the bus bar by a fastening member, for example, a bolt, which is fixed to the electrically insulating body 200 and passes through the second fastening hole of the bus bar 300 and the first fastening hole of the heating plate 100.

In one embodiment, the fastening hole 310 of the busbar 300 is replaced with the fastening hole 320 of the busbar 300 or the fastening hole 330 of the busbar 300. Therefore, when the fastening hole 310 of the busbar 300 is used, the fastening hole 320 of the busbar 300 or The fastening hole 330 may not be formed, and when the fastening hole 320 of the busbar 300 is used, the fastening hole 310 of the busbar 300 may not be formed.

In one embodiment, a portion of the upper portion of the bus bar 300 may have a recessed surface that is spaced apart from the second main surface 100B of the heating plate 100 to secure a cooling gas flow path. In the embodiment shown in Figures 2a-2d, it may have two recessed surfaces. The number of recessed surfaces may be 1 or 3 or more, but the present invention is not limited thereto. Also, the recessed surface may be flat, but this is exemplary only and the invention is not so limited.

In order to provide a low resistance contact surface between the bus bar 300 and the heat generating thin film layer 110 or to apply a reliable power source to the heat generating thin film layer 110, the bus bar 300 and the heat generating thin film layer 110 may be provided. May further include a metal paste (not shown). The metal paste may include a conductive metal, a glass frit, and an organic binder. As the conductive metal, silver (Ag), copper (Cu), nickel (Ni), gold (Au), platinum (Pt), palladium (Pd), lead (Pb), indium (In), rhodium. (Rh), ruthenium (Rd), iridium (Ir), osmium (Os), tungsten (W), tantalum (Ta), bismuth (Bi), tin (Sn), zinc (Zn), titanium (Ti), aluminum It may contain one or more metals selected from the group consisting of (Al), cobalt (Co) and iron (Fe). The metal paste may be applied or coated on the bus bar 300 and a partial area of the heat generating thin film layer 110.

2a to 2d are perspective views showing each bus bar having a heat dissipation structure according to various embodiments of the present invention.

Referring to FIG. 2a, a bus bar 300A according to an embodiment has a recessed surface 300_R having a curved surface (or streamline), which is a heat dissipation structure that facilitates a flow T of a cooling gas. A channel for the flow of the cooling gas is extended between the recessed surface 300_R having the curved surface and the second main surface 100B of the heating plate.

Referring to FIG. 2b, a bus bar 300B according to another embodiment may include a recessed surface 300_R for cooling gas flows T1 and T2 and a heat dissipation hole DH. The heat dissipation hole DH has a function of expanding the contact surface with the cooling gas while ensuring the flow of the cooling gas. Although not shown in the drawing, in the bus bar 300B, the recessed surface 300_R may be omitted, and the heat dissipation holes DH may be a plurality of two or more.

Referring to FIG. 2c, the bus bar 300C according to another embodiment may be formed of a porous body. The porous body is a non-limiting example, and is formed by a process of foaming a conductor, a process of etching a sacrificial material to form pores, or a process of regularly or randomly connecting linear structures such as wires. Can be done. A cooling gas flow T3 may be enabled through the inside of the porous body. In yet another embodiment, as described above, the bus bar 300C may be further provided with the recessed surface 300_R or the heat dissipation hole DH, through which the cooling gas flows T1 and T2 may be additionally guided.

Referring to FIG. 2d, a bus bar 300D according to another embodiment may further include each heat radiation fin 300P as a heat radiation structure. Each radiating fin 300P can increase the radiating surface area and further expand the contact area with the flow T of the cooling gas. The shape of each radiating fin 300P is not limited to the illustrated plate shape, and may have various three-dimensional structures such as a needle shape, a wrinkle shape, or a composite form thereof. Collectively referred to as fins. The flow T3 of the cooling gas between the radiation fins 300P is enabled, and the bus bar 300D can be forcibly cooled. In another embodiment, in addition to the heat dissipation fins 300P, additional heat dissipation structures such as recessed surfaces and heat dissipation holes may be further provided.

The first main surface having recessed surfaces of the busbars 300A to 300D disclosed in FIGS. 2a to 2d and the second main surface of the heating plate 100 are in contact with each other, so that the busbars 300A to 300D and the heating plate 100 are separated from each other. The second main surface that is fastened and does not include the recessed surface of each bus bar 300A to 300D contacts the trench portion 200TR of the electrical insulation body 200, and each bus bar 300A to 300D and the electrical insulation body 200 are fastened. Can be done.

In one embodiment, when it is necessary to apply a high power to the heat generating thin film layer 110, the contact area between each bus bar 300A to 300D and the heat generating thin film layer 110 may be increased, as shown in FIGS. For this reason, the second main surface not including the recessed surface of each bus bar 300A to 300D and the second main surface of the heating plate 100 are in contact with each other, and each bus bar 300A to 300D and the heating plate 100 are fastened. The first main surface having the recessed surface of each bus bar 300A to 300D may come into contact with the trench portion 200TR of the electrically insulating body 200 to fasten each bus bar 300A to 300D to the electrically insulating body 200. Unless inconsistent, the description of the bus bars 300A to 300D disclosed in FIGS. 3a to 3d may refer to the bus bars 300A to 300D disclosed in FIGS. 2a to 2d.

Also, the shapes of the bus bars 300A to 300D disclosed with reference to FIGS. 2a to 3d are exemplary, and the recessed surface, the heat dissipation holes or the heat dissipation fins may be applied independently, and at least 2 The above may be applied in combination. These heat dissipating structures may be aligned in a direction for ensuring a smooth flow of the cooling gas discharged from the inside of the heating plate 100 to the outside. For example, the axis of the heat dissipation hole may be aligned with the flow direction of the cooling gas, and each heat dissipation fin may be aligned with the flow direction of the cooling gas. According to the embodiment of the present invention, during the cooling of the heater assembly 10, each bus bar is naturally cooled through the heat dissipation structure, and the heat dissipation structure is exposed to the cooling gas flows T, T1, T2, T3 and is forcibly cooled. Can be done. Through the forced cooling of each bus bar 300, the heat release of the heating plate 100 may be promoted, and the rapid cooling of the heating plate 100 may be ensured.

Referring again to FIGS. 1A and 1B, the base part 400 is a support block on which the electrically insulating body 200 is mounted, and the heater assembly 10 is assembled to the base part 400. For example, in the base part 400, a first fixing hole 403 into which a first fixing bolt (not shown) is inserted for connecting to the electrically insulating body 200, and a lower plate 600 to be described later are connected. A second fixing hole 401 into which the second fixing bolt is inserted may be formed.

The first fixing holes 403 may be arranged on the central end side of the base part 400 in alignment with the corresponding holes 220 of the electrically insulating body 200. In addition, the second fixing holes 401 may be arranged on the edge side of the base part 400 in alignment with corresponding holes of the lower plate 600, which will be described later.

In one embodiment, the vacuum holes 400VH1, 400VH2, 400VH3 and the cooling hole 400CH may be formed in the base part 400. Further, the vacuum holes 400VH1, 400VH2, 400VH3 of the base part 400 are vertically aligned with the vacuum holes 200VH1, 200VH2, 200VH3 of the electrically insulating body 200 and the vacuum holes 120VH1, 120VH2, 120VH3 of the heating plate 100. obtain. The cooling hole 400CH of the base unit 400 may be vertically aligned with the cooling hole 200CH of the electrically insulating body 200 and may be vertically spaced from the cooling hole 120CH of the heating plate 100. Further, in the gap between the electrically insulating body 200 and the base portion 400, airtightness can be maintained in order to prevent leakage of the cooling gas.

A heater assembly 10 according to another embodiment of the present invention includes a heating plate 100 having a heating thin film layer 110 formed thereon, an electrically insulating body 200 providing a space S into which air flows, and a heating plate 100. And at least two bus bars 300 disposed between the electrically insulating body 200 and the heating plate 100 for discharging heat from the heating plate 100, and a base part 400 providing a cooling passage for circulating a cooling gas. , An attachment member DA detachably attached to the upper surface of the heating plate 100. For the description of the heating plate 100, the electrically insulating body 200, the two or more bus bars 300, and the base portion 400, the above description of FIGS. 1a to 1b may be referred to unless there is a contradiction.

In order to protect the first main surface 100U of the heating plate 100, the attachment member DA may be formed of a ceramic pad having an excellent heat transfer ability in one embodiment. Since the attachment member DA is located between the heating plate 100 and the semiconductor structure PS to be processed during a chip bonding operation through the heater assembly 10, the attachment member DA is located between the heating plate 100 and the semiconductor structure PS to be processed. It can function as a buffer member that protects the heater assembly 10 and the semiconductor structure PS to be processed from shocks by directly preventing the damage.

In one embodiment, a vacuum hole DAH that vertically penetrates the vacuum hole 120VH1 of the heating plate 100 is formed in the attachment member DA. In addition, a vacuum suction channel DAL having a trench pattern that is connected to the vacuum hole DAH and expands a suction area with the semiconductor structure PS to be processed may be formed.

The attachment member DA can be quickly replaced with a component that frequently undergoes thermal deformation and damage through a structure that can be attached to and detached from the heating plate 100. In this embodiment, the semiconductor structure PS to be processed can be attached to and detached from the attach member DA by a vacuum suction force through the vacuum hole DAH of the attach member DA. Of course, the present invention is not limited to this, and the attachment member DA can be attached to and detached from the heating plate 100 through various connection methods. For example, the attachment member DA may be attached or separated from the upper surface of the heating plate 100 using a clip or a clamp member.

In the embodiment of the present invention, a power line and a temperature measuring wire may be provided as at least one wiring path between the electrically insulating body 200 and the base part 400. By connecting the power line to the bus bar 300, power is applied to the heat generating thin film layer 110, and the detection signal of the temperature measurement sensor such as a thermocouple or a temperature sensor may be transmitted to the external measurement device through the temperature measurement wiring. ..

It may further include at least two thermocouples for contacting the second main surface 100B of the heating plate 100 through at least two or more bus bars 300 and for measuring temperature independently of each other. Each of the thermocouples may contact the second main surface 100B of the heating plate 100 through the single through hole 200TCH for the thermocouple of the electrically insulating body 200. Preferably, the measurement end of the thermocouple, which is in contact with the second main surface 100B of the heating plate 100, is in close contact with the first main surface 100U of the heating plate 100 and is heated by the heating area of the semiconductor structure PS to be processed. Can be located within range. Substantially, the area of the heating plate 100 is larger than the area of the semiconductor structure PS to be processed, and a partial region of the heating plate 100 heats the semiconductor structure PS to be processed. The position of the measurement end of the thermocouple that contacts the main surface 100B is excluded from the partial region of the heating plate 100 that does not heat the semiconductor structure PS to be heated, thereby heating the semiconductor structure PS to be processed. Temperature measurement is performed in a partial area of the plate 100. However, the position of the measurement end of the thermocouple is not limited to these, and a partial region of the heating plate 100 that heats the semiconductor structure PS to be processed and heating that does not heat the semiconductor structure PS to be processed. Temperature measurement is performed on a partial area of the plate 100.

4a and 4b are perspective views illustrating thermocouples TC that contact the second main surface 100B of the heating plate 100 according to various exemplary embodiments of the present invention to measure temperatures independently of each other.

Referring to FIG. 4a, a thermocouple 500a according to an exemplary embodiment includes a two-port tube 501, a measurement end 503, and a thermocouple for transmitting a measurement signal from the measurement end 503 to an external temperature measuring device (not shown). And a couple wire 502. The measurement end portion 503 uses the Seebeck effect to generate an electromotive force generated on a contact surface of different metals due to temperature, for example, on one contact surface of the second main surface 100B of the heating plate 100 and the metal of the thermocouple 500a. The generated electromotive force can be transmitted to an external temperature measuring device (not shown) via the thermocouple wire 502.

Referring to FIG. 4B, a thermocouple 500b according to an embodiment includes a four-port tube 501′, a plurality of measurement ends 503a and 503b, and measurement signals from the measurement ends 503a and 503b, which are measured by an external temperature measuring device (see FIG. A plurality of thermocouple wires 502a, 502b may be included for transmission to a thermocouple (not shown). The measurement end portion 503a uses the Seebeck effect to generate an electromotive force generated at the contact surface of different metals due to temperature, for example, the second main surface 100B of the heating plate 100 and the metal first contact surface of the thermocouple 500b. The generated electromotive force can be transmitted to an external temperature measuring device (not shown) via the thermocouple wire 502a. In addition, the measurement end portion 503b is a second contact surface different from the contact surface of the dissimilar metal due to the temperature using the Seebeck effect, for example, the second main surface 100B of the heating plate 100 and the metal first contact surface of the thermocouple 500b. The electromotive force generated in step (1) is generated, and the generated electromotive force can be transmitted to an external temperature measuring device (not shown) via the thermocouple wire 502b. Preferably, the first measurement end 503a and the second measurement end 503b are assembled through a four-port tube 501' so that they have a separation distance within 3mm from each other, and a single penetration for a thermocouple of the electrically insulated body 200. The second main surface of the heating plate 100 may be contacted through the hole 200TCH. The assembled at least two thermocouples 500b may include a four-port tube 501' for passing a plurality of thermocouple wires 502a, 502b and tying them together. However, in the present invention, the thermocouple 500b may include four or more mouth tubes, for example, n (n is an integer, n=5, 6, 7,...) Mouth tubes.

Referring to FIGS. 4a and 4b, the plurality of thermocouples 500a are dispersed and contacted with the second main surface 100B of the heating plate 100 to uniformly heat the semiconductor structure PS to be processed by the heating plate 100. You can measure whether or not. Further, by bringing the thermocouple 500b into contact with the second main surface 100B of the heating plate 100, one of the first measurement end portion 503a and the second measurement end portion 503b is used as an active measurement end portion, The other one is used as a measurement end for standby and is duplicated (Active/Standby). As a result, even if it is impossible to measure the temperature through any one of the measuring ends, the temperature can be measured through the other measuring end, so that the stability of the temperature measurement can be achieved. In some embodiments, reliable temperature measurement is possible by utilizing the average temperature value for two contact surfaces of adjacent heating plates 100. In another embodiment of the present invention, the thermocouples of FIGS. 4a and 4b are mixed as shown in FIG. 5 below to obtain a uniform, stable, and reliable temperature measurement. The second main surface 100B of 100 may be dispersed and contacted.

FIG. 5 illustrates thermocouples 500a and 500b that can contact the second main surface 100B of the heating plate 100 through the single through hole 200TCH for the thermocouple of the electrically insulating body 200 according to an exemplary embodiment of the present invention. FIG.

Referring to FIG. 5, at least one single through hole 200TCH for a thermocouple is formed at different positions from the vacuum holes 200VH1, 200VH2, 200VH3 and the cooling hole 200CH in the electrically insulating body 200, and a plurality of thermocouples are provided. The couples 500a, 500b, 500c may be led out to the upper surface of the electrically insulating body 200. Further, the respective measurement ends of the derived thermocouples 500a, 500b, 500c may be dispersed/contacted with the second main surface 100B of the heating plate 100.

FIG. 6 illustrates that the cooling gas is supplied to the second main surface 100B of the heating plate 100 from the cooling hole 200CH of the electrically insulating body 200 which is vertically aligned with the cooling hole 400CH of the base part 400 according to an embodiment of the present invention. It is a figure for explaining the flow of the cooling gas at the time of being.

Referring to FIG. 6, when the cooling gas is supplied in the vertical direction T1 through the cooling hole 200CH of the electrically insulating body 200 which is vertically aligned with the cooling hole 400CH of the base part 400, the cooling gas of the vertical direction T1 is , And may collide with the second main surface 100B of the heating plate 100 and be branched in the horizontal directions T2 and T3. A part of the cooling gas branched in the horizontal directions T2 and T3 may be jetted to the outside through the outlet OL after cooling the heating plate 100, and branched in the horizontal directions T2 and T3. Another part of the cooling gas flows along the cooling gas discharge channel CPL directions T5 and T7 through the cooling hole 120CH of the heating plate 100 which is separated from the cooling hole 200CH of the electrically insulating body 200. Good.

7a to 7e illustrate heating plates 110 having various shapes of vacuum holes 120VH2 and 120VH3, a vacuum suction passage VPL, a cooling hole 120CH, and a cooling gas discharge passage CPL according to various embodiments of the present invention. It is a top view shown.

Referring to FIG. 7a, the vacuum holes 120VH1, 120VH2, 120VH3 of the heating plate 100 are located in a diagonal direction, and the vacuum holes 120VH2, 120VH3 may be connected to the vacuum suction channel VPL having a trench pattern. In addition, the four cooling holes 120CH′ of the heating plate 100 are located in a rectangular shape centered on the vacuum hole 120VH1 of the heating plate 100, and the cooling holes 120CH′ of each heating plate 100 have a branched trench pattern. And a cooling gas discharge channel CPL′ having a cooling gas discharge channel CPL′.

Referring to FIG. 7B, the vacuum holes 120VH1, 120VH2, 120VH3 of the heating plate 100 are located in a diagonal direction, and the vacuum holes 120VH2, 120VH3 may be connected to the vacuum suction channel VPL having a trench pattern. In addition, the two cooling holes 120CH of the heating plate 100 are symmetrically located with respect to the vacuum hole 120VH1 of the heating plate 100, and the cooling holes 120CH of each heating plate 100 have a branched trench pattern. The cooling gas discharge channel CPL″ may be connected to provide a larger cooling area than the cooling gas discharge channel CPL of FIG. 1a.

Referring to FIG. 7c, the vacuum holes 120VH1, 120VH2, 120VH3 of the heating plate 100 are located in a diagonal direction, and the vacuum holes 120VH2, 120VH3 may be connected to the vacuum suction channel VPL having a trench pattern. Further, the two cooling holes 120CH of the heating plate 100 are symmetrically located with the vacuum hole 120VH1 of the heating plate 100 as a center, and the cooling holes 120CH of each heating plate 100 have a zigzag-shaped trench pattern. The cooling gas discharge channel CPL′″ may be connected to provide a larger cooling area than the cooling gas discharge channel CPL of FIG. 1a.

Referring to FIG. 7d, two heating plate assembly holes 101′ may be located at the central end. Further, the vacuum holes 120VH1, 120VH2, 120VH3 of the heating plate 120 are located in a diagonal direction, and the vacuum holes 120VH2, 120VH3 among them can be connected to the vacuum suction flow path VPL having a trench pattern. In addition, the two cooling holes 120CH of the heating plate 100 are symmetrically located with respect to the vacuum hole 120VH1 of the heating plate 100, and the cooling holes 120CH of each heating plate 100 have a branched trench pattern. The cooling gas discharge channel CPL″″ may be connected to provide a larger cooling area than the cooling gas discharge channel CPL of FIG. 1a.

Referring to FIG. 7e, the two heating plate assembly holes 101′ may be located at the central end. In addition, the vacuum holes 120VH1, 120VH2, 120VH3 of the heating plate 100 are located in a diagonal direction, and the vacuum holes 120VH2, 120VH3 of the heating plate 100 may be connected to the vacuum suction channel VPL having a branched trench pattern. In addition, the two cooling holes 120CH of the heating plate 100 are symmetrically located with respect to the vacuum hole 120VH1 of the heating plate 100, and the cooling holes 120CH of each heating plate 100 are circular branched trenches. The cooling gas discharge channel CPL''''' having a pattern may be connected to provide a larger cooling area than the cooling gas discharge channel CPL of FIG. 1a.

The present invention is not limited to the various forms of the vacuum holes 120VH2 and 120VH3, the vacuum suction passage VPL, the cooling hole 120CH, and the cooling gas discharge passage CPL described with reference to FIGS. 7A to 7E. For example, the vacuum holes 120VH2, 120VH3 and the cooling holes 120CH that can maximize the cooling area or the suction area and the vacuum suction passage VPL and the cooling gas discharge passage CPL that can maximize the cooling area or the suction area can be used. Is also applicable.

FIG. 8 is a perspective view showing a combined state of the heater assembly 10 according to the exemplary embodiment of the present invention.

Referring to FIG. 8, the heating plate 100 and the electrically insulating body 200 may include the heating plate assembly hole 101, the fastening hole 310 of the bus bar 300 disposed between the heating plate 100 and the electrically insulating body 200, and the electrical insulation body 200. It may be fastened through the fastening member 900 passing through the through hole of the static insulation body 200. In addition, the electrically insulating body 200 and the base part 400 may be fastened through a fastening member 800 that passes through the assembly hole 220 of the electrically insulating body 200 and the first fixing hole 403 of the base part 400. In addition, the base part 400 and the lower plate 600 may be fastened through a fastening member 700 that passes through a second fixing hole 401 of the base part 400 and an assembly hole (not shown) of the lower plate 600. In one embodiment, the fastening members 700, 800 and 900 may include fixing bolts, but are not limited thereto. The heating plate 100 and the electrically insulating body 200, the electrically insulating body 200 and the base through the fastening members. The part 400 or the base part 400 and the lower plate 600 may be fastened.

In one embodiment, the lower plate 600 may include a suction unit 610 for vacuum suction and a suction unit 620 for injecting a cooling gas. Although not shown in the drawing, a vacuum suction path connecting the vacuum holes 400VH1, 400VH2, 400VH3 of the base part 400 and the suction part 610 is formed inside the lower plate 600, and the vacuum suction flow path is Separately, a cooling gas flow path for connecting the cooling hole 400CH of the base part 400 and the inlet part 620 may be formed.

In one embodiment, the lower plate 600 can provide a negative pressure for the inflow and circulation of the cooling gas. To this end, the lower plate 600 is provided with a main flow path for guiding gas movement for generating negative pressure and a cooling gas flow path communicating with the main flow path. The cooling gas passage may have the same diameter as the main passage, but the present invention is not limited thereto, and the number of the cooling gas passage may be one or more.

When gas (air) moves at high speed from the inlet 620 to the outlet 610 of the main flow path in the main flow path, the main flow path can maintain a lower pressure (negative pressure) than the cooling gas flow path. Due to the pressure difference between the main flow channel and the cooling gas flow channel, the gas (for example, air) in the cooling gas flow channel moves to the main flow channel and is discharged through the outlet 610 of the main flow channel. obtain. As described above, when a gas (air) flow is generated in the main flow path and the velocity of the gas (air) in the main flow path is generated (increased), the pressure in the main flow path is changed to the cooling gas flow. Since the pressure becomes lower than the pressure in the passage (Bernoulli's theorem), the cooling gas flow path allows the cooling gas to flow in through the separated space S, and the heat generating thin film layer 110 exposed to the flow of the cooling gas causes the cooling gas to flow in. The gas can be used for rapid cooling and the temperature rise can be suppressed. In one embodiment, in order to rapidly cool the heat generating thin film layer 110, the flow rate of the gas flowing along the main flow path may be increased, and the heat generating thin film layer 110 may be maintained at a constant temperature. The temperature of the exothermic thin film layer 110 may be controlled to be constant by controlling the temperature of the power applied to the layer 110 or cooling the power with the power control.

The cooling gas channels may be provided as two cooling gas channels branched from one side and the other side of the main channel. These four cooling gas passages can communicate with the two cooling holes 200CH of the electrically insulating body 200, respectively. As a result, the air flowing in through the separated space S can move to the two cooling gas flow paths through the two cooling holes 200CH while being heated by the heat of the heating plate 100. Further, the cooling gas that has moved to the cooling gas flow path may be quickly discharged to the outlet 610 of the main flow path after passing through the main flow path. The heating plate 100 may be rapidly cooled through the rapid flow of the cooling gas.

FIG. 9 is a flip chip bonding apparatus using a heater assembly 10 according to an embodiment of the present invention.

Referring to FIG. 9, the flip chip bonding apparatus includes a semiconductor chip package SCP including a bare chip 20, an IC substrate 40, and bump pads 30 formed between the bare chip 20 and the IC substrate 40, a heater assembly 10, and a heater assembly 10. A control module (not shown) that controls the overall operation of the heater assembly 10. The heating plate 100, the electrically insulating body 200, the bus bars 300, the base portion 400, and the lower plate 600, which constitute the heater assembly 10, may be referred to the contents described with reference to FIGS. Good.

The bare chip 20 is an integrated circuit chip cut out from a wafer, and is called a bare die in a state immediately before the packaging stage. The IC board 40 electrically connects the bare chip 20 and a main board (not shown), supplies operating power, enables signal input/output (I/O), and externally impacts the built-in bare chip 20. Also protects from The bump pad 30 can serve as a terminal that causes a current to flow into the bare chip 20. Also, the control module (not shown) may control the cooling gas supply and the vacuum suction in the heater assembly 10 through an external device (not shown). Specifically, when the semiconductor chip package SCP is prepared, the control module (not shown) performs thermal pressing (TP) to control the heater assembly 10 so that the bare chip 20 can be bonded to the IC substrate 40. be able to. As a result, the bare chip 20 and the IC substrate 40 can be electrically and mechanically connected to each other in the semiconductor chip package SCP. In addition, the control module (not shown) may apply the heat and pressure to bond the bare chip 20 and the IC substrate 40 to each other by the heat and pressure through the heater assembly 10 and then manufacture the subsequent semiconductor chip package SCP. Cooling is performed through cooling holes 120CH, 200CH, 400CH of the heater assembly 10 so that at least one of the semiconductor chip package SCP, the heating plate 100 in the heater assembly 10 and the attachment member DA is cooled. The gas can be controlled to flow.

In one embodiment, a control module (not shown) sucks the bare chip 20 onto the heating plate 100 of the heater assembly 10 through a vacuum suction force and then bonds the sucked bare chip 20 to the IC substrate 40. The heater assembly 10 can be controlled.

The exothermic thin film layer 110 according to the exemplary embodiment of the present invention may further include a diffusion barrier layer on the upper portion thereof. When the heating thin film layer 110 is an FTO conductive film and is used by heating at a high temperature of about 200° C. or higher, the microstructure of the thin film is changed or the oxidation state of the film is changed due to the influence of high voltage. Can be done. When the process of heating or cooling the FTO conductive film is repeated as described above and defects or changes in the fine structure due to atom movement are accumulated, the surface of the FTO conductive film is deteriorated and defects such as cracks occur. Can occur. As a result, the defects may cause deterioration in stability and durability of the thin film heating element.

In one embodiment of the present invention, a diffusion barrier layer (not shown) may be further formed on the heat generating thin film layer 110 to minimize such defects. The diffusion barrier layer may prevent atom and volatilization of tin and/or fluorine in the heat generating thin film layer 110 and prevent deterioration of the surface of the heat generating thin film layer 110, thus providing a heat generating structure having improved stability and durability. Can be done. In addition, the diffusion barrier layer may cover the heat generating thin film layer 110 to prevent gas molecules in the atmosphere such as oxygen, water, methane gas, oxidizing gas or reducing gas from penetrating into the heat generating thin film layer 110. it can.

In the heating body according to the embodiment of the present invention, a defect related to a life may occur mainly in the heat generating thin film layer 110 during actual use. Since the heat generating thin film layer 110 is formed separately on the substrate (see 120 of FIG. 1A), the heat generating thin film layer 110 whose life is simply expired is removed by chemical etching or physical polishing to expose the exposed substrate. The heating element can be regenerated by forming the heat generating thin film layer 110 again on the surface. The present invention has the advantage of being more economical than the conventional heating element manufactured by compounding and sintering different kinds of materials such as a pattern electrode.

In order to uniformly transfer the heat to the object to be processed in the semiconductor manufacturing process by the heating body using the heat generating thin film layer 110, the heating body may be heated or cooled at high speed or at high speed. The contact interface between the surface of the heating element and the surface of the object to be treated must be maintained over the entire area, for which thermal deformation of the heating element must not occur. The present inventor has confirmed that such thermal deformation occurs due to the difference in thermal expansion coefficient between the substrate and the heat generating thin film layer 110. Due to the difference in the coefficient of thermal expansion between the substrate and the heat-generating thin film layer 110, the heating plate (see 100 in FIG. 1a) may be concave or convex with respect to the surface of the object to be processed during high-speed temperature increase or high-speed cooling. In this case, there is a problem in that heat cannot be transferred uniformly over the entire area when it comes into contact with the object to be processed. In addition, the difference in the coefficient of thermal expansion may cause the heating thin film layer 110 to be peeled from the substrate, which may shorten the life of the heating plate 100. In particular, in order to apply the heat generating thin film layer 110 as a precision heater of a thermal compression bonder (TCB) for manufacturing a semiconductor, it is necessary to improve this.

According to an embodiment of the present invention, the substrate 120 is made of a ceramic material with respect to the ceramic heating thin film layer 110, and the material composition of the substrate 120 is adjusted. In one example, the substrate 120 may include an insulating material, silicon nitride, as a main constituent material. However, silicon nitride has a smaller coefficient of thermal expansion than the heat generating thin film layer which is a metal oxide. In order to match the coefficient of thermal expansion of the substrate 120 made of silicon nitride with the coefficient of thermal expansion of the heat generating thin film layer 110, a ceramic material having a thermal expansion coefficient larger than that of the heat generating thin film layer, for example, titanium nitride ( TiN) can be mixed and used. That is, the substrate 120 according to the embodiment of the present invention uses a ceramic material having excellent electrical insulation as a main substrate material even if it has a low coefficient of thermal expansion, and mainly contains a metal oxide. In order to match the difference in coefficient of thermal expansion between the heat generating thin film layer 110 having a higher coefficient of thermal expansion than the substrate material and the substrate 120, an additional ceramic material having a large coefficient of thermal expansion may be mixed. As a result, mixed composition substrates, including the main substrate material and the additional ceramic material, can have a coefficient of thermal expansion that is linearly proportional to the relative mixing ratio of these materials due to the rule of mix. ..

In one embodiment, the mixed composition substrate may have a mixed composition of silicon nitride and titanium nitride to match a coefficient of thermal expansion with the FTO heat generating thin film layer. In one embodiment, the substrate 120 may be formed by mixing silicon nitride powder and titanium nitride powder to form a slurry and then sintering the slurry. At this time, since the titanium nitride itself has conductivity, the insulating property of the substrate 120 can be maintained when titanium oxide is mixed in less than 30 wt% with respect to the total weight of the mixed powder. it can.

Therefore, the heater assembly 10 including the exothermic thin film layer 110 according to various embodiments of the present invention is not only advantageous for rapid heating and cooling, but also has a regenerative advantage due to uniform heat distribution and separate formation.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications and changes are possible without departing from the technical idea of the present invention. It will be apparent to those of ordinary skill in the art to which this invention pertains.

100 heating plate 110 heating thin film layer 120 heating body 120CH cooling hole 120VH1, 120VH2, 120VH3 vacuum hole 200 electrically insulating body 200TR trench part 200VH1, 200VH2, 200VH3 vacuum hole 200CH cooling hole 200TCH single through hole for thermocouple 300 bus bar 310 , 320, 330 Fastening hole 400 Base portion 401 Second fixing hole 403 First fixing hole 600 Lower plate DA Attach member PS Processed semiconductor structure

Claims (20)

A heater assembly mounted on a bonding device for manufacturing a semiconductor element,
A heating plate including a first main surface and a second main surface, on which the processed semiconductor structure is releasably supported;
An electrically insulating body that is disposed on the second main surface side of the heating plate and supports the heating plate;
A heater assembly, comprising: at least two busbars disposed between the heating plate and the electrically insulating body, for discharging heat from the heating plate and applying power. The heater assembly according to claim 1, wherein the heat generating thin film layer formed on the second main surface of the heating plate performs surface phase heating of the heat generating body formed on the first main surface of the heating plate. Lee. The at least two or more bus bars have a structure extending in a direction parallel to the second main surface of the heating plate, and include two bus bars spaced apart from each other in parallel. The heater assembly described. The electrically insulating body has a trench part for accommodating at least a part of a bottom part of the bus bar, and the at least a part of the bus bar is inserted into and supported by the trench part. The heater assembly described. The bus bar may include a fastening hole, the electrically insulating body may include a through hole, and the bus bar may be fixed to the electrically insulating body by a fastening member passing through the through hole and the fastening hole. Heater assembly. The heater assembly according to claim 1, wherein a portion of an upper portion of the bus bar has a recessed surface that is spaced apart from the second main surface of the heating plate to secure a cooling gas flow path. The heater assembly of claim 1, wherein the bus bar further includes a heat dissipation hole, a porous body, or a heat dissipation fin for heat dissipation. The heater assembly according to claim 1, wherein the bus bar includes a metal, a metal alloy, a carbon body, or a combination thereof. The heating plate is fastened to a part of the upper portion of the bus bar,
The heater assembly of claim 1, wherein the electrically insulating body is fastened to a part of an upper portion of the bus bar. The heating plate includes at least one first vacuum hole for releasably supporting the processed semiconductor structure,
At least one first vacuum hole communicating with the at least one first vacuum hole and closely contacting the at least one first vacuum hole to maintain airtightness inside the electrically insulating body. The heater assembly of claim 1 including a vacuum flow path. The heating plate includes at least one cooling hole,
The heater assembly according to claim 1, further comprising a cooling gas passage for supplying a cooling gas to the cooling hole inside the electrically insulating body. The outlet of the cooling gas passage is separated from the cooling hole of the heating plate, and a part of the cooling gas discharged from the outlet of the cooling gas passage is transferred to the cooling hole, The heater assembly according to claim 11, wherein the heater assembly is transferred onto the first major surface. The heater assembly of claim 11, wherein the outlet of the cooling gas flow path is offset in a direction perpendicular to the cooling holes of the heating plate and a second major surface of the heating plate. Is disposed between the processed semiconductor structure and the first main surface of the heating plate so as to protect the first main surface of the heating plate, and on the second main surface of the heating plate. Further including an attachment member disposed in
The heating plate further includes at least one second vacuum hole for releasably supporting the attachment member,
At least one second vacuum hole communicating with the at least one second vacuum hole and closely contacting the at least one second vacuum hole to maintain airtightness inside the electrically insulating body. The heater assembly of claim 11, further comprising a vacuum flow path. A first trench pattern is formed on the first main surface of the heating plate to expand and flow the cooling gas transmitted from the cooling hole along the first main surface, and at least the trench pattern is formed. The heater assembly according to claim 13, wherein the attachment member covers a part of the attachment member. The heater assembly according to claim 14, wherein the trench pattern is longitudinally extended beyond an edge of the attaching member or extended to an edge of the heating plate. The second trench pattern, which communicates with the at least one second vacuum hole and is covered and sealed by the attaching member, is further formed on the first main surface of the heating plate. The heater assembly described in. At least two thermocouples for penetrating the electrically insulating body, contacting the second main surface of the heating plate through the at least two or more busbars, and measuring the temperature independently of each other. The heater assembly of claim 1, further comprising: The electrically insulating body includes a single through hole for a thermocouple,
19. The at least two thermocouples are assembled so that each measuring end has a separation distance within 3 mm from each other, and contact the second main surface through the single through hole for the thermocouple. The heater assembly described. 20. The heater assembly of claim 19, wherein the assembled at least two thermocouples include a multi-neck tube for passing a plurality of thermocouple wires and tying them together.

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