JP2020092144A - Magnetic memory device and manufacturing method thereof - Google Patents

Abstract

To provide a magnetic memory device ensuring stable operation, and to provide a manufacturing method thereof.SOLUTION: A magnetic memory device according to an embodiment includes a first conductive layer, a first magnetic layer, a first opposite magnetic layer, a first non-magnetic layer, a non-magnetic first metal layer, a first insulation, and a first insulation layer. The first conductive layer includes a first region, a second region, and a third region therebetween. The first opposite magnetic layer is provided between the third region and the first magnetic layer in a first direction intersecting a second direction from the first region to the second region. The first magnetic layer is provided between the first magnetic layer and the first opposite magnetic layer. The direction from the first opposite magnetic layer to at least a part of the first metal layer is in the second direction. The direction from the first metal layer to the first insulation is in the frist direction. The direction from at least a part of the first magnetic layer to the first insulation is in the second direction. The first insulation layer is provided between the first metal layer and the first opposite magnetic layer in the second direction.SELECTED DRAWING: Figure 1

Description

Embodiments of the present invention relate to a magnetic storage device and a manufacturing method thereof.

Stable operation is desired in magnetic storage devices.

JP, 2017-112351, A

Embodiments of the present invention provide a magnetic memory device capable of stable operation and a method of manufacturing the same.

The magnetic storage device according to the embodiment includes a first conductive layer, a first magnetic layer, a first opposing magnetic layer, a first nonmagnetic layer, a nonmagnetic first metal layer, a first insulating portion, and And a first insulating layer. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first opposing magnetic layer is provided between the third region and the first magnetic layer in a first direction intersecting a second direction from the first region to the second region. The first magnetic layer is provided between the first magnetic layer and the first opposing magnetic layer. The direction from the first opposing magnetic layer to at least a part of the first metal layer is along the second direction. The direction from the first metal layer to the first insulating portion is along the first direction. The direction from at least a part of the first magnetic layer to the first insulating portion is along the second direction. The first insulating layer is provided between the first metal layer and the first opposing magnetic layer in the second direction.

FIG. 1 is a schematic cross-sectional view illustrating the magnetic memory device according to the first embodiment. 2A and 2B are schematic cross-sectional views illustrating the magnetic memory device according to the first embodiment. FIG. 3 is a schematic cross-sectional view illustrating another magnetic memory device according to the first embodiment. FIG. 4A and FIG. 4B are schematic perspective sectional views showing the manufacturing process of the magnetic memory device according to the first embodiment. 5A and 5B are schematic perspective sectional views showing the manufacturing process of the magnetic memory device according to the first embodiment. FIG. 6A and FIG. 6B are schematic perspective sectional views showing a manufacturing process of the magnetic memory device according to the first embodiment. 7A and 7B are schematic cross-sectional views illustrating another magnetic memory device according to the first embodiment. FIG. 8 is a schematic cross-sectional view illustrating the magnetic memory device according to the second embodiment. FIG. 9 is a schematic cross-sectional view illustrating another magnetic memory device according to the second embodiment. 10A and 10B are schematic perspective sectional views showing a manufacturing process of the magnetic memory device according to the second embodiment. 11A and 11B are schematic perspective sectional views showing a manufacturing process of the magnetic memory device according to the second embodiment. FIG. 12 is a schematic perspective sectional view showing a manufacturing process of the magnetic memory device according to the second embodiment. 13A and 13B are schematic cross-sectional views illustrating another magnetic memory device according to the second embodiment. 14A and 14B are schematic cross-sectional views illustrating another magnetic memory device according to the second embodiment. 15A and 15B are schematic cross-sectional views illustrating another magnetic memory device according to the second embodiment. FIG. 16 is a schematic cross-sectional view illustrating the magnetic memory device according to the third embodiment. 17A and 17B are schematic cross-sectional views illustrating the magnetic memory device according to the third embodiment. FIG. 18 is a schematic perspective view illustrating the magnetic memory device according to the third embodiment. 19A and 19B are schematic cross-sectional views illustrating the magnetic memory device according to the third embodiment. 20A and 20B are schematic perspective sectional views showing a manufacturing process of the magnetic memory device according to the third embodiment. 21A and 21B are schematic perspective sectional views showing a manufacturing process of the magnetic memory device according to the third embodiment. 22A and 22B are schematic cross-sectional views illustrating another magnetic memory device according to the third embodiment. 23A and 23B are schematic cross-sectional views illustrating the operation of the magnetic memory device according to the embodiment. 24A and 24B are schematic cross-sectional views illustrating the operation of the magnetic memory device according to the embodiment. 25A to 25C are schematic cross-sectional views illustrating the magnetic memory device according to the embodiment. 26A to 26C are schematic cross-sectional views illustrating another magnetic memory device according to the embodiment. 27A to 27C are schematic cross-sectional views illustrating another magnetic memory device according to the embodiment. FIG. 28 is a schematic diagram showing the magnetic memory device according to the embodiment.

Each embodiment of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each portion, the size ratio between the portions, and the like are not always the same as the actual ones. Even when the same portion is shown, the dimensions and ratios may be different depending on the drawings.
In the specification and the drawings of the application, components similar to those described above are designated by the same reference numerals, and a detailed description thereof will be appropriately omitted.

FIG. 1 is a schematic cross-sectional view illustrating the magnetic memory device according to the first embodiment.
As shown in FIG. 1, the magnetic memory device 110 according to the first embodiment includes a first magnetic layer 11, a first opposing magnetic layer 11c, a first nonmagnetic layer 11i, a first conductive layer 21, and a first metal layer 31. , The second metal layer 32, and the first insulating portion 41.

For example, the first conductive layer 21 is provided on the base body 20s. The base 20s may be at least a part of the substrate. The base 20s is, for example, insulative. The base body 20s may include, for example, at least one of silicon oxide and aluminum oxide. The silicon oxide may be, for example, thermal silicon oxide.

The first conductive layer 21 includes first to third regions 21a to 21c. The third area 21c is located between the first area 21a and the second area 21b. For example, the third area 21c is continuous with the first area 21a. For example, the third area 21c is continuous with the second area 21b. The first conductive layer 21 includes a first metal. The first metal is, for example, at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

The first magnetic layer 11 is separated from the third region 21c in the first direction. The first opposing magnetic layer 11c is provided between the third region 21c and the first magnetic layer 11 in the first direction. The first nonmagnetic layer 11i is provided between the first opposing magnetic layer 11c and the first magnetic layer 11. Another layer may be provided between the first magnetic layer 11 and the first nonmagnetic layer 11i. Another layer may be provided between the first opposing magnetic layer 11c and the first nonmagnetic layer 11i.

The first direction is, for example, the Z-axis direction. One direction perpendicular to the Z-axis direction is the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is the Y-axis direction. The first direction intersects the second direction from the first region 21a to the second region 21b. In this example, the second direction corresponds to the X-axis direction. The third direction intersects a plane including the first direction and the second direction. In this example, the third direction corresponds to the Y-axis direction.

The first magnetic layer 11 is, for example, ferromagnetic. The first opposing magnetic layer 11c is, for example, ferromagnetic. The first magnetic layer 11 and the first opposing magnetic layer 11c include at least one selected from the group consisting of Fe, Co, and Ni, for example. The first nonmagnetic layer 11i includes, for example, at least one selected from the group consisting of MgO, CaO, SrO, TiO, VO, NbO, and Al ₂ O ₃ . The first nonmagnetic layer 11i may include, for example, at least one selected from the group consisting of Ga, Al, and Cu.

The first metal layer 31 is nonmagnetic. The direction from the first opposing magnetic layer 11c to at least part of the first metal layer 31 is along the X-axis direction. The direction from the second region 21b to the first metal layer 31 is along the Z-axis direction. The second metal layer 32 is nonmagnetic. The direction from the first magnetic layer 11 to the second metal layer 32 is along the X-axis direction.

For example, the length of at least a part of the second region 21b in the Z-axis direction is shorter than the length of the third region 21c in the Z-axis direction. The first metal layer 31 is curved, for example. The position of one part of the first metal layer 31 in the Z-axis direction is different from the position of another part of the first metal layer 31 in the Z-axis direction.

The first metal layer 31 and the second metal layer 32 include a second metal. The second metal may be different than the first metal. The second metal is, for example, at least one selected from the group consisting of Ru, Ir, Pd, Cu, Rh, Mo, Ta, W, Os, Pt, and Al.

The first insulating portion 41 is provided between the first metal layer 31 and the second metal layer 32 in the Z axis direction. The direction from the first nonmagnetic layer 11i to the first insulating portion 41 is along the X-axis direction. The first insulating portion 41 may overlap the second metal layer 32 in the X-axis direction. The first insulating portion 41 may overlap the first metal layer 31 in the Z-axis direction. The first insulating portion 41 includes, for example, at least one selected from the group consisting of Al and Si and at least one selected from the group consisting of oxygen and nitrogen.

In the example illustrated in FIG. 1, the magnetic memory device 110 further includes the second conductive layer 22. A plurality of each of the first metal layer 31, the second metal layer 32, and the first insulating portion 41 are provided in the X-axis direction.

The second conductive layer 22 is provided between the third region 21c and the first opposing magnetic layer 11c. The second conductive layer 22 may be further provided between the first conductive layer 21 and the first metal layer 31. The second conductive layer 22 contains a third metal. The third metal may be different than the first metal and the second metal. The third metal is, for example, at least one selected from the group consisting of Hf, Mg, Li, Sc, Y, Zr, Ti, Nb, V, and Al.

The second conductive layer 22 and the first opposing magnetic layer 11c are provided between the first metal layers 31 in the X axis direction. The first magnetic layer 11 is provided between the second metal layers 32 in the X-axis direction. The plurality of first insulating portions 41 are respectively provided between the plurality of first metal layers 31 and the plurality of second metal layers 32 in the Z-axis direction.

The first magnetic layer 11, the first opposing magnetic layer 11c, and the first nonmagnetic layer 11i are included in the first stacked body SB1. The first stacked body SB1 corresponds to, for example, one memory unit (memory cell).

The first magnetic layer 11 is, for example, a magnetization fixed layer. The first opposing magnetic layer 11c is, for example, a magnetization free layer. The magnetization 11M of the first magnetic layer 11 is less likely to change than the magnetization 11cM of the first opposing magnetic layer 11c. The first magnetic layer 11 functions as a reference layer, for example. The first opposing magnetic layer 11c functions as a storage layer, for example.

The first stacked body SB1 functions, for example, as a magnetoresistance change element. In the first stacked body SB1, for example, TMR (Tunnel Magneto Resistance Effect) occurs. For example, the electric resistance of the path including the first magnetic layer 11, the first nonmagnetic layer 11i, and the first opposing magnetic layer 11c changes according to the difference between the direction of the magnetization 11M and the direction of the magnetization 11cM. To do. The first stacked body SB1 has, for example, a magnetic tunnel junction (MTJ). The first stacked body SB1 corresponds to, for example, an MTJ element. The first stacked body SB1 may correspond to, for example, a GMR element.

The magnetic storage device 110 may further include the control unit 70. The controller 70 is electrically connected to the first area 21a and the second area 21b. The control unit 70 is further electrically connected to the first magnetic layer 11. For example, the drive circuit 75 is provided in the control unit 70. The drive circuit 75 is electrically connected to the first magnetic layer 11 by the first wiring 70a. In this example, the first switch Sw1 (for example, a transistor) is provided on the current path between the drive circuit 75 and the first magnetic layer 11.

The controller 70 supplies the first current Iw1 (first write current) to the first conductive layer 21 in the first operation (first write operation). As a result, the first state is formed. The first current Iw1 is a current from the first region 21a to the second region 21b. The control unit 70 supplies the second current Iw2 (second write current) to the first conductive layer 21 in the second operation (second write operation). As a result, the second state is formed. The second write current Iw2 is a current from the second region 21b to the first region 21a.

The first electrical resistance between the first magnetic layer 11 and the first conductive layer 21 (for example, the first region 21a) after the first operation (first state) is the first electrical resistance after the second operation (second state). The second electric resistance between the magnetic layer 11 and the first conductive layer 21 (for example, the first region 21a) is different.

This difference in electrical resistance is based on, for example, the difference in the state of the magnetization 11 cM between the first state and the second state.

In the read operation, the control unit 70 detects a characteristic (may be a voltage or a current or the like) according to the electric resistance between the first magnetic layer 11 and the first conductive layer 21 (for example, the first region 21a). good.

The first opposing magnetic layer 11c functions as a layer that stores information, for example. For example, the first state in which the magnetization 11 cM faces in one direction corresponds to the stored first information. The second state in which the magnetization 11cM faces in another direction corresponds to the stored second information. The first information corresponds to one of “0” and “1”, for example. The second information corresponds to the other of “0” and “1”.

The magnetization 11 cM can be controlled by, for example, a current (write current) flowing in the first conductive layer 21. For example, the direction of the magnetization 11 cM can be controlled by the direction of the current (write current) of the first conductive layer 21. The first conductive layer 21 functions, for example, as a Spin Orbit Layer (SOL). For example, the spin orbit torque generated between the first conductive layer 21 and the first opposing magnetic layer 11c can change the direction of the magnetization 11cM. The spin orbit torque is based on the current (write current) flowing in the first conductive layer 21. This current (write current) is supplied by the control unit 70 (for example, the drive circuit 75).

The magnetic memory device 110 includes a first metal layer 31 and a second metal layer 32. When the first metal layer 31 is provided, the electric resistance of the path through which the first current Iw1 and the second current Iw2 flow can be reduced. For example, even when the length of the first conductive layer 21 in the Z-axis direction is shortened in order to increase the current densities of the first current Iw1 and the second current Iw2, it is possible to suppress the increase in the electric resistance of the path. Furthermore, when the second metal layer 32 is provided, the heat dissipation of the first stacked body SB1 is improved.

The first insulating portion 41 is provided between the first metal layer 31 and the second metal layer 32. When the first metal layer 31 and the second metal layer 32 are continuous, the first current Iw1 or the second current Iw2 passes through the first metal layer 31 and the second metal layer 32 and flows through the first magnetic layer 11. .. When the first current Iw1 or the second current Iw2 flows through the first magnetic layer 11, the write operation to the first stacked body SB1 may become unstable. For example, the first state or the second state may not be properly formed after the first action or the second action. By providing the first insulating portion 41, the write operation to the first stacked body SB1 can be performed more stably.

2A and 2B are schematic cross-sectional views illustrating the magnetic memory device according to the first embodiment.
FIG. 2A shows an example of the A1-A2 cross section of FIG. FIG. 2B shows another example of the A1-A2 cross section of FIG.

The magnetic memory device 110 further includes a second insulating portion 42, as shown in FIG. For example, the plurality of second insulating portions 42 are provided in the Y-axis direction. The first stacked body SB1 and the first metal layer 31 are provided between the second insulating portions 42. The second insulating portion 42 contains, for example, titanium and oxygen.

The first opposing magnetic layer 11c has, for example, a first side s1. One of the plurality of first metal layers 31 has, for example, the second side s2. The first side s1 and the second side s2 are along the Y-axis direction.

For example, if the shape of the first opposing magnetic layer 11c is circular or elliptical when viewed from the Z-axis direction, the magnitude of the local current flowing from the first metal layer 31 to the first opposing magnetic layer 11c is reduced. There are variations. By arranging the first side s1 and the second side s2 along the Y-axis direction, it is possible to reduce variations in local magnitudes of the currents i1 to i3 flowing from the first metal layer 31 to the first opposing magnetic layer 11c. Thereby, for example, the write operation to the first stacked body SB1 can be performed more stably.

The first opposing magnetic layer 11c may further have a third side s3. Another one of the plurality of first metal layers 31 has, for example, a fourth side s4. The first side s1 is located between the second side s2 and the third side s3 in the X-axis direction. The third side s3 is located between the first side s1 and the fourth side s4 in the X-axis direction. The third side s3 and the fourth side s4 are along the Y-axis direction.

Since the third side s3 and the fourth side s4 are along the Y-axis direction, it is possible to further reduce variations in the magnitude of the currents i1 to i3 flowing through the first opposing magnetic layer 11c. Thereby, for example, the write operation to the first stacked body SB1 can be performed more stably.

As shown in FIG. 2B, the first side s1 to the fourth side s4 may intersect with the X-axis direction and the Y-axis direction. For example, at least a part of each of the first side s1 to the fourth side s4 is parallel to each other. Also in the configuration shown in FIG. 2B, the variation in the magnitude of the currents i1 to i3 can be reduced, as in the configuration shown in FIG. The write operation to the first stacked body SB1 can be performed more stably.

FIG. 3 is a schematic cross-sectional view illustrating another magnetic memory device according to the first embodiment.
The magnetic memory device 120 shown in FIG. 3 further includes a second magnetic layer 12, a second opposing magnetic layer 12c, a second nonmagnetic layer 12i, and a third metal layer 33.

The first conductive layer 21 further includes a fourth region 21d and a fifth region 21e. The second region 21b is located between the third region 21c and the fourth region 21d in the X-axis direction. The fifth region 21e is located between the second region 21b and the fourth region 21d in the X-axis direction.

The second magnetic layer 12 is separated from the fifth region 21e in the Z-axis direction. The direction from the first magnetic layer 11 to the second magnetic layer 12 is along the X-axis direction. The second opposing magnetic layer 12c is provided between the fifth region 21e and the second magnetic layer 12 in the Z-axis direction. The second nonmagnetic layer 12i is provided between the second magnetic layer 12 and the second opposing magnetic layer 12c. Another layer may be provided between the second magnetic layer 12 and the second nonmagnetic layer 12i. Another layer may be provided between the second opposing magnetic layer 12c and the second nonmagnetic layer 12i.

The configurations of the first magnetic layer 11 and the first counter magnetic layer 11c can be applied to the second magnetic layer 12 and the second counter magnetic layer 12c, respectively. The configuration of the first nonmagnetic layer 11i can be applied to the second nonmagnetic layer 12i.

The third metal layer 33 is nonmagnetic. The direction from the second magnetic layer 12 to the third metal layer 33 is along the X-axis direction. The third metal layer 33 is located between the second metal layer 32 and the second magnetic layer 12 in the X-axis direction. The third metal layer 33 includes a second metal.

The first metal layer 31 is located between the first opposing magnetic layer 11c and the second opposing magnetic layer 12c in the X-axis direction. The first insulating portion 41 is arranged between the first metal layer 31 and the second metal layer 32 in the Z-axis direction, between the first metal layer 31 and the third metal layer 33 in the Z-axis direction, and in the X-axis direction. It is provided between the second metal layer 32 and the third metal layer 33.

In the example shown in FIG. 3, a plurality of third metal layers 33 are provided in the X-axis direction. The second magnetic layer 12 is provided between the third metal layers 33 in the X-axis direction. In the example shown in FIG. 3, another second conductive layer 22 is provided between the fifth region 21e and the second opposing magnetic layer 12c. The second conductive layer 22 between the third region 21c and the first opposing magnetic layer 11c may be connected to the second conductive layer 22 between the fifth region 21e and the second opposing magnetic layer 12c.

The second magnetic layer 12, the second opposing magnetic layer 12c, and the second nonmagnetic layer 12i are included in the second stacked body SB2. The second stacked body SB2 corresponds to, for example, another one memory unit (memory cell).

The magnetization 12M of the second magnetic layer 12 is less likely to change than the magnetization 12cM of the second opposing magnetic layer 12c. The second magnetic layer 12 functions as a reference layer, for example. The second opposing magnetic layer 12c functions as a storage layer, for example.

The magnetization 12cM of the second opposing magnetic layer 12c is changed by the current flowing in the first conductive layer 21 (for example, the first current Iw1 and the second current Iw2).

The control unit 70 is electrically connected to, for example, the first region 21a, the fourth region 21d, the first magnetic layer 11, and the second magnetic layer 12. As described above, the first switch Sw1 (for example, a transistor) is provided on the current path between the drive circuit 75 of the control unit 70 and the first magnetic layer 11. On the other hand, the second switch Sw2 (for example, a transistor) is provided on the current path between the drive circuit 75 and the second magnetic layer 12. These switches are included in the control unit 70. The drive circuit 75 and the second magnetic layer 12 are electrically connected by the second wiring 70b.

The controller 70 supplies the first current Iw1 (first write current) to the first conductive layer 21 in the first operation (first write operation). As a result, the first state is formed. In one example, the first current Iw1 is a current from the first region 21a to the fourth region 21d. The control unit 70 supplies the second current Iw2 (second write current) to the first conductive layer 21 in the second operation (second write operation). As a result, the second state is formed. In one example, the second write current Iw2 is a current from the fourth region 21d to the first region 21a.

Also in this case, the first electrical resistance between the first magnetic layer 11 and the first conductive layer 21 (for example, the first region 21a) after the first operation (first state) is after the second operation (second state). 2), the second electric resistance between the first magnetic layer 11 and the first conductive layer 21 (for example, the first region 21a) is different.

When the control unit 70 supplies the first current Iw1 to the first conductive layer 21, the third state is formed in the second stacked body SB2. When the control unit 70 supplies the second current Iw2 to the first conductive layer 21, the fourth state is formed in the second stacked body SB2. The third electrical resistance between the second magnetic layer 12 and the first conductive layer 21 (first region 21a) in the third state is the second magnetic layer 12 and the first conductive layer 21 (first region) in the fourth state. 21a) different from the fourth electrical resistance.

This difference in electric resistance is based on, for example, the difference in the state of the magnetization 12 cM between the third state and the fourth state.

The control unit 70 may detect a characteristic (may be a voltage or a current, etc.) according to the electric resistance between the second magnetic layer 12 and the first conductive layer 21 (first region 21a) in the read operation. ..

One of the first stacked body SB1 (first memory cell) and the second stacked body SB2 (second memory cell) is selected by the operation of the first switch Sw1 and the second switch Sw2 described above. A write operation and a read operation for a desired memory cell are performed. An example of the operation of the control unit 70 will be described later.

The magnetic storage device 120 includes a third metal layer 33. When the third metal layer 33 is provided, the heat dissipation of the second stacked body SB2 is improved. By providing the first insulating portion 41 between the first metal layer 31 and the third metal layer 33, the write operation to the second stacked body SB2 can be performed more stably.

FIG. 4A, FIG. 4B, FIG. 5A, FIG. 5B, FIG. 6A, and FIG. 6B are manufacturing steps of the magnetic memory device according to the first embodiment. It is a typical perspective sectional view showing.

The conductive film 21F (first conductive film) is formed on the base body 20s. A conductive film 22F (second conductive film) is formed on the conductive film 21F. The magnetic film MF1 (first magnetic film) is formed on the conductive film 22F. The nonmagnetic film NF is formed on the magnetic film MF1. The magnetic film MF2 (second magnetic film) is formed on the non-magnetic film NF. As a result, the laminated film SF shown in FIG. 4A is formed.

The conductive film 21F includes the first metal. The conductive film 22F includes a second metal. The magnetic films MF1 and MF2 include, for example, at least one first element selected from the group consisting of Fe, Co, and Ni. The nonmagnetic film NF includes, for example, at least one selected from the group consisting of MgO, CaO, SrO, TiO, VO, NbO, and Al ₂ O ₃ .

A plurality of resists R1 are formed on the stacked film SF by using a photolithography method. The plurality of resists R1 are separated from each other in the X-axis direction and extend in the Y-direction. Using the plurality of resists R1 as a mask, part of the magnetic film MF2, part of the non-magnetic film NF, part of the magnetic film MF1, and part of the conductive film 22F are removed. As a result, the trench Tr1 is formed as shown in FIG. Through this step, a plurality of laminated films SFa are formed. The stacked film SFa includes a conductive film 22Fa, a magnetic film MF1a, a non-magnetic film NFa, and a magnetic film MF2a.

Selective Atomic Layer Deposition (selective ALD) of selectively depositing a metal material on the surface of the film containing metal is performed. In selective ALD, first, a precursor (precursor) is attached only to the surface of a conductive film. Next, a gas that reacts with the precursor is supplied to the laminated film. The gas contains, for example, a second metal. When depositing a metal material containing Pt, the precursor contains, for example, MeCpPtMe ₃ (Trimethyl(methylcyclopentadienyl)platinum). When depositing a metal material containing Ru, the precursor is, for example, Ru(EtCp) ₂ (Ru(C ₂ H ₅ C ₅ H ₄ )), 2EBECH-Ru(ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl). ) At least one of Ru and C ₁₆ H ₂₂ Ru is included. As a result, as shown in FIG. 5A, the metal film 31F (first metal film) is formed on the upper surface of the conductive film 21F exposed through the trench Tr1, the side surface of the conductive film 22Fa, and the side surface of the magnetic film MF1a. It The metal film 32F (second metal film) is formed on one side surface of the plurality of magnetic films MF2a. The metal film 33F (third metal film) is formed on another side surface of the plurality of magnetic films MF2a.

The resist R1 is removed. The insulating film 41F is formed, the trench Tr1 is buried, and the surface of the insulating film 41F is flattened. The insulating film 41F is formed between the metal film 31F and the metal film 32F, between the metal film 31F and the metal film 33F, and between the metal film 32F and the metal film 33F. As shown in FIG. 5B, a resist R2 is formed on the laminated film SFa and the insulating film 41F by using the photolithography method.

As shown in FIG. 6A, using the resist R2 as a mask, part of the magnetic film MF2a, part of the non-magnetic film NFa, part of the magnetic film MF1a, part of the conductive film 22Fa, and the conductive film 21F. , A part of the metal film 31F, a part of the metal film 32F, and a part of the metal film 33F are removed. As a result, the trench Tr2 is formed.

The resist R2 is removed. As shown in FIG. 6B, the insulating film 42F is formed and the trench Tr2 is filled, and the surface of the insulating film 42F is flattened. As a result, the magnetic storage device 120 shown in FIG. 3 is manufactured.

7A and 7B are schematic cross-sectional views illustrating another magnetic memory device according to the first embodiment.
The magnetic storage device 130 illustrated in FIG. 7A further includes a first connection portion 30a, a second connection portion 30b, and a third connection portion 30c. The first connecting portion 30a, the second connecting portion 30b, and the third connecting portion 30c include at least one of Cu, Ta, W, and Al, for example.

The second connecting portion 30b is provided between the first connecting portion 30a and the third connecting portion 30c in the X-axis direction. The insulating portion 25 is provided between the first connecting portion 30a and the second connecting portion 30b in the X-axis direction. Another insulating portion 25 is provided between the second connecting portion 30b and the third connecting portion 30c in the X-axis direction.

The first region 21a is located between the first connection portion 30a and one of the plurality of first metal layers 31 in the Z-axis direction. The second region 21b is located between the second connection part 30b and another one of the plurality of first metal layers 31 in the Z-axis direction. The fourth region 21d is located in the Z-axis direction between the third connection portion 30c and another one of the plurality of first metal layers 31.

The first connecting portion 30a, the second connecting portion 30b, and the third connecting portion 30c are electrically connected to the first conductive layer 21. The first connecting portion 30a, the second connecting portion 30b, and the third connecting portion 30c are electrically connected to the control unit 70, for example.

As in the magnetic storage device 140 shown in FIG. 7B, the first conductive layer 21 may be provided in plural in the X-axis direction. One of the plurality of first conductive layers 21 is provided between the insulating portion 25 and the first stacked body SB1 in the Z-axis direction.

The one of the plurality of first conductive layers 21 includes, for example, a first side end 21s1, a first overlapping portion 21o1, and a second side end 21s2.

The first side end 21s1 is located between the first connecting portion 30a and one of the plurality of first metal layers 31 in the Z-axis direction. The one of the plurality of first metal layers 31 contacts, for example, the first connection portion 30a and the first side end portion 21s1. Thereby, the reliability of the electrical connection between the first connecting portion 30a and the first side end portion 21s1 can be improved.

The second side end 21s2 is located between the second connection part 30b and another one of the plurality of first metal layers 31 in the Z-axis direction. The other one of the plurality of first metal layers 31 contacts, for example, the second connection portion 30b and the second side end portion 21s2. This can improve the reliability of the electrical connection between the second connecting portion 30b and the second side end portion 21s2.

The first overlapping portion 21o1 overlaps the second conductive layer 22 and the first stacked body SB1 in the Z-axis direction. The length of the first overlapping portion 21o1 in the Z-axis direction is longer than the length of the first side end portion 21s1 in the Z-axis direction and longer than the length of the second side end portion 21s2 in the Z-axis direction.

Another one of the plurality of first conductive layers 21 is provided between another insulating portion 25 and the second stacked body SB2 in the Z-axis direction. The other one of the plurality of first conductive layers 21 includes, for example, a third side end portion 21s3, a second overlapping portion 21o2, and a portion fourth side end portion 21s4.

The third side end 21s3 is located between the second connection part 30b and another one of the plurality of first metal layers 31 in the Z-axis direction. The fourth side end portion 21s4 is located between the third connection portion 30c and another one of the plurality of first metal layers 31 in the Z-axis direction. The second overlapping portion 21o2 overlaps another second conductive layer 22 and the second stacked body SB2 in the Z-axis direction. The length of the second overlapping portion 21o2 in the Z-axis direction is longer than the length of the third side end portion 21s3 in the Z-axis direction and longer than the length of the fourth side end portion 21s4 in the Z-axis direction.

FIG. 8 is a schematic cross-sectional view illustrating the magnetic memory device according to the second embodiment.
As shown in FIG. 8, the magnetic memory device 210 does not include the second metal layer 32. The magnetic memory device 210 further includes a first insulating layer 51.

In the X-axis direction, the first insulating layer 51 includes the first metal layer 31 and the second conductive layer 22, the first metal layer 31 and the first opposing magnetic layer 11c, and the first metal layer 31 and the first metal layer 31. It is provided between the first nonmagnetic layer 11i and between the first insulating portion 41 and the first magnetic layer 11.

The direction from the first magnetic layer 11 to the first insulating portion 41 is along the X-axis direction. The direction from the first magnetic layer 11 to the first metal layer 31 does not follow the X-axis direction. The first magnetic layer 11 does not face the first metal layer 31 via the first insulating layer 51 in the X-axis direction.

The first insulating layer 51 includes, for example, a first insulating region 51a and a second insulating region 51b. The second insulating region 51b is located between the first insulating region 51a and the first metal layer 31 and between the first insulating region 51a and the first insulating portion 41 in the X-axis direction.

The first insulating region 51a includes a third metal and at least one selected from the group consisting of oxygen and nitrogen. The second insulating region 51b includes the first metal and at least one selected from the group consisting of oxygen and nitrogen.

When the first metal layer 31 is provided, the electric resistance of the path through which the first current Iw1 and the second current Iw2 flow can be reduced.

For example, when the first metal layer 31 faces the first magnetic layer 11 via the first insulating layer 51 in the X-axis direction, the capacitance is formed by the first magnetic layer 11 and the first metal layer 31. When the first current Iw1 or the second current Iw2 of high frequency is supplied to the first conductive layer 21, this capacitance causes power loss and current leakage. Since the first metal layer 31 does not face the first magnetic layer 11, power loss and current leakage can be suppressed.

In the example illustrated in FIG. 8, each of the first metal layer 31, the first insulating portion 41, and the first insulating layer 51 is provided in plural in the X-axis direction. The first stacked body SB1 and the plurality of first insulating layers 51 are provided between the first metal layers 31 and between the first insulating portions 41. The first stacked body SB1 is provided between the first insulating layers 51 in the X-axis direction.

FIG. 9 is a schematic cross-sectional view illustrating another magnetic memory device according to the second embodiment.
The magnetic memory device 220 shown in FIG. 9 further includes a second magnetic layer 12, a second opposing magnetic layer 12c, a second nonmagnetic layer 12i, and a second insulating layer 52.

The second magnetic layer 12, the second opposing magnetic layer 12c, and the second nonmagnetic layer 12i in the magnetic memory device 220 are respectively the second magnetic layer 12, the second opposing magnetic layer 12c, and the second nonmagnetic layer 12i in the magnetic memory device 120. The configuration of the two non-magnetic layer 12i can be applied.

One of the plurality of first metal layers 31 is located between the first opposing magnetic layer 11c and the second opposing magnetic layer 12c in the X-axis direction. The one of the plurality of first metal layers 31 includes a first end 31e1, a middle portion 31m, and a second end 31e2. The position of the first end 31e1 in the X-axis direction is between the position of the first opposing magnetic layer 11c in the X-axis direction and the position of the intermediate portion 31m in the X-axis direction. The position of the second end 31e2 in the X-axis direction is between the position of the second opposing magnetic layer 12c in the X-axis direction and the position of the intermediate portion 31m in the X-axis direction. The length of the intermediate portion 31m in the Z-axis direction is, for example, shorter than the length of the first end 31e1 in the Z-axis direction and shorter than the length of the second end 31e2 in the Z-axis direction.

The second insulating layer 52 is formed between the first metal layer 31 and the second opposing magnetic layer 12c, between the first metal layer 31 and the second nonmagnetic layer 12i, and between the first insulating portion 41 and the second magnetic layer. It is provided between 12 and. The second insulating layer 52 includes an insulating region 52a and an insulating region 52b, similar to the first insulating layer 51, for example. The insulating region 52b is provided between the insulating region 52a and the first metal layer 31 and between the insulating region 52a and the first insulating portion 41 in the X-axis direction. The insulating region 52a includes a third metal and at least one selected from the group consisting of oxygen and nitrogen. The insulating region 52b includes a first metal and at least one selected from the group consisting of oxygen and nitrogen.

Another second conductive layer 22 is provided between the fifth region 21e and the second opposing magnetic layer 12c. The second conductive layer 22 between the third region 21c and the first opposing magnetic layer 11c may be connected to the second conductive layer 22 between the fifth region 21e and the second opposing magnetic layer 12c.

FIG. 10A, FIG. 10B, FIG. 11A, FIG. 11B and FIG. 12 are schematic perspective sectional views showing the manufacturing process of the magnetic memory device according to the second embodiment.

The same steps as those shown in FIGS. 4A and 4B are performed to form a plurality of laminated films SFa. At this time, part of the magnetic film MF2, part of the non-magnetic film NF, part of the magnetic film MF1, and part of the conductive film 22F are removed by irradiation with an ion beam such as Ar. At the time of removal, some of the scattered atoms are attached to the side surface of the stacked film SFa. Thereby, as shown in FIG. 10A, the redeposited film RF is formed on the side surface of the laminated film SFa.

The redeposition film RF includes, for example, the third metal contained in the conductive film 22F. The redeposited film RF may further include at least one selected from the group consisting of Fe, Co, and Ni.

As shown in FIG. 10B, the redeposition film RF is oxidized or nitrided to form the insulating film IF1. At this time, a part of the exposed conductive film 21F is oxidized or nitrided to form the insulating region IR1.

The insulating region IR1 is irradiated with an ion beam of Ar or the like to remove the insulating region IR1. During the removal, some of the scattered atoms adhere to the insulating film IF1. Thus, as shown in FIG. 11A, the insulating film IF2 including the first metal and at least one selected from the group consisting of oxygen and nitrogen is formed.

Using the ALD method, the metal film 31F is formed as shown in FIG. The metal film 31F is formed, for example, on the exposed surface of the conductive film 21F and the surface of the insulating film IF2.

A part of the metal film 31F faces the magnetic film MF2a via the insulating films IF1 and IF2 in the X-axis direction. For example, the metal film 31F is irradiated with an ion beam from a direction inclined with respect to the Z-axis direction to remove the part of the metal film 31F as shown in FIG. After that, the magnetic storage device 220 shown in FIG. 9 is manufactured by performing the same steps as those shown in FIGS. 5B, 6A, and 6B.

13(a), 13(b), 14(a), 14(b), 15(a), and 15(b) show another magnetic storage device according to the second embodiment. It is a typical sectional view which illustrates.
In the magnetic memory device 230 shown in FIG. 13A, a part of the first magnetic layer 11 faces the first metal layer 31 via the first insulating layer 51 in the X-axis direction. Another part of the first magnetic layer 11 faces the first insulating portion 41 via the first insulating layer 51 in the X-axis direction.

A part of the second magnetic layer 12 faces the first metal layer 31 via the second insulating layer 52 in the X-axis direction. Another part of the second magnetic layer 12 faces the first insulating portion 41 via the second insulating layer 52 in the X-axis direction.

The first insulating layer 51 further includes a third insulating region 51c. The third insulating region 51c is provided between the second insulating region 51b and the first metal layer 31 and between the second insulating region 51b and the first insulating portion 41 in the X-axis direction. The third insulating region 51c includes, for example, Si and at least one selected from the group consisting of oxygen and nitrogen.

Even when a part of the first magnetic layer 11 and a part of the second magnetic layer 12 are opposed to the first metal layer 31, the first insulating layer 51 is provided, so that the first metal layer 31 to the first metal layer 31 are provided. The energization of the magnetic layer 11 and the energization of the first metal layer 31 to the second magnetic layer 12 can be suppressed.

For example, the length in the X-axis direction of at least a portion of the first insulating layer 51 is twice or more the length in the Z-axis direction of the first non-magnetic layer 11i, and the length of the second non-magnetic layer 12i in the Z-axis direction. Is more than twice the length at. Accordingly, it is possible to further suppress the energization between the first metal layer 31 and the first magnetic layer 11 and the energization between the first metal layer 31 and the second magnetic layer 12.

As in the magnetic memory device 240 shown in FIG. 13B, between the first metal layer 31 and the first insulating layer 51 and between the first metal layer 31 and the second insulating layer 52 in the X-axis direction, Part of the first insulating portion 41 may be provided. The length of the first metal layer 31 in the X-axis direction is shorter than the length of the first insulating portion 41 in the X-axis direction.

As in the magnetic memory device 250 shown in FIG. 14A, the first insulating film 61 and the second insulating film 62 may be provided. The first insulating film 61 is connected to the first insulating layer 51, for example. The first insulating film 61 is provided between the first end 31e1 and the first conductive layer 21 in the Z-axis direction. The second insulating film 62 is connected to the second insulating layer 52, for example. The second insulating film 62 is provided between the second end 31e2 and the first conductive layer 21 in the Z-axis direction. The first insulating film 61 and the second insulating film 62 include, for example, a first metal and at least one selected from the group consisting of oxygen and nitrogen.

As in the magnetic memory device 260 shown in FIG. 14B, in the X-axis direction, between the first metal layer 31 and the first insulating layer 51 and between the first metal layer 31 and the second insulating layer 52, The first insulating portion 41 may be provided. Part of the first insulating film 61 and part of the second insulating film 62 overlap the first insulating portion 41 in the Z-axis direction.

Even when the first insulating film 61 and the second insulating film 62 are provided, by providing the first metal layer 31, the electric resistance of the magnetic memory device 260 can be reduced and the heat dissipation can be improved. ..

The magnetic storage device 270 shown in FIG. 15A further includes a first connection portion 30a, a second connection portion 30b, and a third connection portion 30c.

The second connecting portion 30b is provided between the first connecting portion 30a and the third connecting portion 30c in the X-axis direction. The insulating portion 25 is provided between the first connecting portion 30a and the second connecting portion 30b in the X-axis direction. Another insulating portion 25 is provided between the second connecting portion 30b and the third connecting portion 30c in the X-axis direction.

The first region 21a is located between the first connection portion 30a and one of the plurality of first metal layers 31 in the Z-axis direction. The second region 21b is located between the second connection part 30b and another one of the plurality of first metal layers 31 in the Z-axis direction. The fourth region 21d is located between the third connection portion 30a and another one of the plurality of first metal layers 31 in the Z-axis direction.

As in the magnetic memory device 280 shown in FIG. 15B, the first conductive layer 21 may be provided in plural in the X-axis direction.

One of the plurality of first conductive layers 21 includes, for example, a first side end 21s1, a first overlapping part 21o1, and a part second side end 21s2. Another one of the plurality of first conductive layers 21 includes, for example, a third side end 21s3, a second overlapping portion 21o2, and a part fourth side end 21s4.

One of the plurality of first metal layers 31 contacts, for example, the first connecting portion 30a and the first side end portion 21s1. Thereby, the reliability of the electrical connection between the first connecting portion 30a and the first side end portion 21s1 can be improved.

Another one of the plurality of first metal layers 31 contacts, for example, the second connection portion 30b and the second side end portion 21s2. This can improve the reliability of the electrical connection between the second connecting portion 30b and the second side end portion 21s2.

In the magnetic storage devices 270 and 280, similarly to the magnetic storage devices 240 and 260, a part of the first insulating portion 41 is located between the first metal layer 31 and the first insulating layer 51 and in the X-axis direction. It may be provided between the metal layer 31 and the second insulating layer 52. The magnetic memory devices 270 and 280 may further include a first insulating film 61 and a second insulating film 62, like the magnetic memory devices 250 and 260.

FIGS. 16, 17A, and 17B are schematic cross-sectional views illustrating the magnetic memory device according to the third embodiment.
FIG. 18 is a schematic perspective view illustrating the magnetic memory device according to the third embodiment.
16 is a cross-sectional view taken along line A1-A2 of FIG. FIG. 17A is a B1-B2 sectional view of FIG. FIG. 17B is a C1-C2 sectional view of FIG. In FIG. 18, the first insulating portion 41 and a part of the second insulating portion 42 are omitted.

For example, the magnetic memory device 310 further includes a third insulating layer 53, as shown in FIG. The third insulating layer 53 includes a third insulating region 53c and a fourth insulating region 53d. The fourth insulating region 53d is located between the third insulating region 53c and the second insulating portion 42 in the Y-axis direction.

The third insulating region 53c includes a third metal and at least one selected from the group consisting of oxygen and nitrogen. The fourth insulating region 53d includes the first metal and at least one selected from the group consisting of oxygen and nitrogen.

In the magnetic memory device 310, as shown in FIGS. 17B and 18, the length L1 of the first metal layer 31 in the Y-axis direction is longer than the length L2 of the first conductive layer 21 in the Y-axis direction. .. For example, the length L1 is longer than the length L3 in the Y-axis direction of the first opposing magnetic layer 11c, the first nonmagnetic layer 11i, or the first magnetic layer 11. For example, the length L1 is longer than the length L4 of the second opposing magnetic layer 12c, the second nonmagnetic layer 12i, or the second magnetic layer 12 in the Y-axis direction. Since the length L1 is longer than the length L2, the heat dissipation of the magnetic storage device 310 can be improved.

For example, the first metal layer 31 includes a first metal portion 31a and a second metal portion 31b, as shown in FIG. 17(b). The second metal portion 31b is located between the first conductive layer 21 and the first metal portion 31a in the Z-axis direction. The length of the first metal portion 31a in the Y-axis direction is longer than the length of the second metal portion 31b in the Y-axis direction. The length in the Y-axis direction of the second metal portion 31b is, for example, substantially the same as the length L2.

19A and 19B are schematic cross-sectional views illustrating the magnetic memory device according to the third embodiment.
FIG. 19A shows an example of a D1-D2 cross section of FIG. FIG. 19B shows another example of the D1-D2 cross section of FIG.

As shown in FIG. 19A, in the magnetic memory device 310, as in the magnetic memory device 110, the first opposing magnetic layer 11c has the first side s1. One of the plurality of first metal layers 31 has the second side s2. The first side s1 and the second side s2 are along the Y-axis direction. The length of the second side s2 in the Y-axis direction is longer than the length of the first side s1 in the Y-axis direction.

For example, the first opposing magnetic layer 11c further has the third side s3. Another one of the plurality of first metal layers 31 has a fourth side s4. The third side s3 and the fourth side s4 are along the Y-axis direction. The length of the fourth side s4 in the Y-axis direction is longer than the length of the third side s3 in the Y-axis direction.

Since the first side s1 to the fourth side s4 are along the Y-axis direction, it is possible to further reduce the variation in the magnitude of the currents i1 to i3 locally flowing through the first opposing magnetic layer 11c. Thereby, for example, the write operation to the first stacked body SB1 can be performed more stably.

For example, the second opposing magnetic layer 12c has a side s5. Another one of the plurality of first metal layers 31 has a side s6. The sides s5 and s6 are along the Y-axis direction. For example, the second opposing magnetic layer 12c further has a side s7. Still another one of the plurality of first metal layers 31 has a side s8. The sides s7 and s8 are along the Y-axis direction.

Since the sides s5 to s8 are along the Y-axis direction, it is possible to further reduce the variation in the magnitude of the currents i4 to i6 locally flowing in the second opposing magnetic layer 12c. Thereby, for example, the write operation to the second stacked body SB2 can be performed more stably.

As shown in FIG. 19B, the first side s1 to the fourth side s4 and the sides s5 to s8 may intersect with the X-axis direction and the Y-axis direction. For example, at least a part of each of the first side s1 to the fourth side s4 is parallel to each other. At least a part of each of the sides s5 to s8 is parallel to each other.

20(a), 20(b), 21(a), and 21(b) are schematic perspective sectional views showing a manufacturing process of the magnetic memory device according to the third embodiment.

The laminated film SF shown in FIG. 4A is formed on the base body 20s. As shown in FIG. 20A, a plurality of trenches Tr1 extending in the X-axis direction are formed in the Y-axis direction. Thereby, the laminated film SF extending in the X-axis direction is formed.

When forming the trench Tr1, for example, an ion beam of Ar or the like is used. When a part of the magnetic film MF2, a part of the non-magnetic film NF, a part of the magnetic film MF1 and a part of the conductive film 22F are removed, for example, the insulating film IF1 and the insulating film IF1 are formed by the redeposited material. IF2 is formed. The insulating film IF1 includes a third metal and at least one selected from the group consisting of oxygen and nitrogen. The insulating film IF2 includes a first metal and at least one selected from the group consisting of oxygen and nitrogen.

As shown in FIG. 20B, the trench Tr1 is filled with the insulating film 42F. A resist R1 extending in the Y-axis direction is formed on the stacked film SF and the insulating film 42F. A plurality of resists R1 are formed in the X-axis direction.

Using the resist R1 as a mask, as shown in FIG. 21A, a part of the laminated film SF and a part of the insulating film IF1 are removed to form a trench Tr2. As a result, a plurality of laminated films SFa are formed on the conductive film 21F. A part of the surface of the conductive film 21F is exposed through the trench Tr2.

When forming the trench Tr2, by performing the same steps as the steps shown in FIGS. 10A, 10B, and 11A, the insulating film IF3 and the insulating film IF3 are formed on the side surface of the stacked film SFb. Form IF4.

Perform selective ALD. As a result, as shown in FIG. 21B, the metal film 31F is selectively formed on the exposed surface of the conductive film 21Fa. The length of the formed metal film 31F in the Y-axis direction is longer than the length of the conductive film 21Fa in the Y-axis direction. The magnetic storage device 310 is manufactured by filling the trench Tr2 with an insulating film.

22A and 22B are schematic cross-sectional views illustrating another magnetic memory device according to the third embodiment.

In the magnetic memory device 320 illustrated in FIG. 22A, the first metal layer 31 includes a third end portion 31e3, a fourth end portion 31e4, and an intermediate portion 31m. The direction from the third end 31e3 to the fourth end 31e4 is along the Y-axis direction. The intermediate portion 31m is located between the third end 31e3 and the fourth end 31e4.

The length of the intermediate portion 31m in the Z-axis direction is shorter than the length of the third end 31e3 in the Z-axis direction and shorter than the length of the fourth end 31e4 in the Z-axis direction. Part of the first metal layer 31 (part of the second region 21b) is provided between the part of the third end portion 31e3 and the part of the fourth end portion 31e4 in the Y-axis direction.

Alternatively, as in the magnetic memory device 320 illustrated in FIG. 22B, the position of the contact surface between the first conductive layer 21 and the first metal layer 31 in the Z-axis direction is the first metal layer 31 and the second insulating portion. It may be the same as the position of the contact surface of 42 in the Z-axis direction.

According to the magnetic storage device 320 and the magnetic storage device 330 shown in FIGS. 22A and 22B, the heat dissipation can be improved similarly to the magnetic storage device 310.

Hereinafter, an example of the operation of the magnetic storage device according to the present embodiment will be described.
As described above, the control unit 70 is electrically connected to the first stacked body SB1 (first magnetic layer 11) and the second stacked body SB2 (second magnetic layer 12). When writing information to the first stacked body SB1, a predetermined selection voltage is applied to the first magnetic layer 11. At this time, a non-selection voltage is applied to the second stacked body SB2. On the other hand, when writing information to the second stacked body SB2, a predetermined selection voltage is applied to the second magnetic layer 12. At this time, a non-selection voltage is applied to the first stacked body SB1. Application of a voltage of 0 V is also included in “application of voltage”. The potential of the selection voltage is different from the potential of the non-selection voltage.

For example, the control unit 70 sets the first magnetic layer 11 to a potential (eg, selection potential) different from the potential of the second magnetic layer 12 (eg, non-selection potential) in the first write operation. In the second write operation, the control unit 70 sets the first magnetic layer 11 to a potential (eg, selection potential) different from the potential of the second magnetic layer 12 (eg, non-selection potential).

For example, the control unit 70 sets the second magnetic layer 12 to a potential (eg, a selection potential) different from the potential of the first magnetic layer 11 (eg, a non-selection potential) in the third write operation. In the fourth write operation, the control unit 70 sets the second magnetic layer 12 to a potential (eg, selection potential) different from the potential of the first magnetic layer 11 (eg, non-selection potential).

The selection of such a potential is performed, for example, by the operation of the first switch Sw1 and the second switch Sw2.

Hereinafter, an example of such an operation will be described.

23A, 23B, 24A, and 24B are schematic cross-sectional views illustrating the operation of the magnetic memory device according to the embodiment.
As shown in FIG. 23A, the control unit 70 and the first magnetic layer 11 are electrically connected by the first wiring 70a. The control unit 70 and the second magnetic layer 12 are electrically connected by the second wiring 70b. In this example, the first switch Sw1 is provided on the first wiring 70a. The second switch Sw2 is provided on the second wiring 70b. The potential of the first magnetic layer 11 is controlled by the control unit 70 controlling the potential of the first wiring 70a. The potential change in the first wiring 70a is substantially small. Therefore, the potential of the first wiring 70a can be regarded as the potential of the first magnetic layer 11. Similarly, the potential of the second wiring 70b can be regarded as the potential of the second magnetic layer 12. Hereinafter, the potential of the first magnetic layer 11 is considered to be the same as the potential of the first wiring 70a. Hereinafter, the potential of the second magnetic layer 12 is considered to be the same as the potential of the second wiring 70b.

In the following example, the magnetization 11M of the first magnetic layer 11 and the magnetization 12M of the second magnetic layer 12 are in the +Y direction. These magnetizations are fixed.

As shown in FIG. 23A, in the first operation OP1, the control unit 70 sets the first region 21a of the first conductive layer 21 to the potential V0. The potential V0 is, for example, a ground potential. In the first operation OP1, the control unit 70 sets the first magnetic layer 11 to the first voltage V1. That is, the control unit 70 sets the first potential difference between the first region 21a and the first magnetic layer 11 to the first voltage V1 in the first operation OP1. The first voltage V1 is, for example, a selection voltage.

On the other hand, the control unit 70 sets the second magnetic layer 12 to the second voltage V2 in the first operation OP1. That is, the control unit 70 sets the second potential difference between the first region 21a and the second magnetic layer 12 to the second voltage V2 in the first operation OP1. The second voltage V2 is, for example, a non-selection voltage. The second voltage V2 is different from the first voltage V1. For example, the absolute value of the first voltage V1 is larger than the absolute value of the second voltage V2. For example, the polarity of the first voltage V1 is different from the polarity of the second voltage V2.

In the first operation OP1, the control unit 70 supplies the first current Iw1 to the first conductive layer 21. The first current Iw1 has a direction from the first region 21a to the fourth region 21d.

In the first operation OP1, for example, the magnetization 11cM of the first opposing magnetic layer 11c in the selected state faces the +Y direction. This is due to the magnetic action from the first conductive layer 21. On the other hand, the magnetization 12cM of the second opposing magnetic layer 12c in the non-selected state does not substantially change. In this example, the magnetization 12 cM maintains the initial state (+Y direction in this example).

As shown in FIG. 23B, in the second operation OP2, the control unit 70 sets the first region 21a of the first conductive layer 21 to the potential V0. In the second operation OP2, the control unit 70 sets the first potential difference between the first region 21a and the first magnetic layer 11 to the first voltage V1. In the second operation OP2, the control unit 70 sets the second potential difference between the first region 21a and the second magnetic layer 12 to the second voltage V2. In the second operation OP2, the control unit 70 supplies the second current Iw2 to the first conductive layer 21. The second current Iw2 has a direction from the fourth region 21d to the first region 21a.

At this time, the magnetization 11cM of the first opposing magnetic layer 11c in the selected state changes in the −Y direction, for example. This is due to the magnetic action from the first conductive layer 21. On the other hand, the magnetization 12cM of the second opposing magnetic layer 12c in the non-selected state does not substantially change. In this example, the magnetization 12 cM maintains the initial state (+Y direction in this example).

The electrical resistance between the first magnetic layer 11 and the first conductive layer 21 (for example, the first region 21a) after the first operation OP1 is referred to as a first electrical resistance. The electric resistance between the first magnetic layer 11 and the first conductive layer 21 (for example, the first region 21a) after the second operation OP2 is referred to as a second electric resistance. The first electric resistance is different from the second electric resistance. In this example, the first electric resistance is lower than the second electric resistance.

On the other hand, the electrical resistance between the second magnetic layer 12 and the first conductive layer 21 (for example, the first region 21a) after the first operation OP1 is referred to as the third electrical resistance. The electrical resistance between the second magnetic layer 12 and the first conductive layer 21 (for example, the first region 21a) after the second operation OP2 is referred to as a fourth electrical resistance. The third electric resistance is substantially the same as the fourth electric resistance. This is because the magnetization 12cM of the second opposing magnetic layer 12c does not substantially change.

Thus, in the embodiment, the absolute value of the difference between the first electric resistance and the second electric resistance is larger than the absolute value of the difference between the third electric resistance and the fourth electric resistance.

As described above, in the selected first stacked body SB1, a change in electric resistance is formed by the first current Iw1 or the second current Iw2. That is, information is written. On the other hand, in the second stacked body SB2 in the non-selected state, the change in electric resistance due to the first current Iw1 or the second current Iw2 is not formed.

In the example of the third operation OP3 illustrated in FIG. 24A, the first stacked body SB1 is in the non-selected state and the second stacked body SB2 is in the selected state. In the first operation OP1, the control unit 70 sets the first potential difference between the first region 21a and the first magnetic layer 11 as the first voltage V1 (see FIG. 23(a)). On the other hand, the control unit 70 sets the first potential difference to the first voltage V1 in the second operation OP2 (see FIG. 23B). As shown in FIG. 24A, in the third operation OP3, the control unit 70 sets the first potential difference between the first region 21a and the first magnetic layer 11 to the second voltage V2 (non-selection voltage). .. The control unit 70 supplies the first current Iw1 to the first conductive layer 21 in the third operation OP3.

At this time, the magnetization 11cM of the first opposing magnetic layer 11c in the non-selected state is the same as the state in FIG. 23(a). On the other hand, the magnetization 12cM of the second opposing magnetic layer 12c in the selected state changes from the state of FIG.

Also in the fourth operation OP4 shown in FIG. 24B, the first stacked body SB1 is in the non-selected state and the second stacked body SB2 is in the selected state. In the fourth operation OP4, the control unit 70 sets the first potential difference to the second voltage V2. The control unit 70 supplies the second current Iw2 to the first conductive layer 21 in the fourth operation OP4.

In the first stacked body SB1 in the non-selected state, the electrical resistance is substantially the same between the third operation OP3 and the fourth operation OP4. On the other hand, in the selected second stacked body SB2, the electrical resistance changes between the third operation OP3 and the fourth operation OP4.

As described above, the absolute value of the difference between the first electric resistance after the first operation OP1 and the second electric resistance after the second operation OP2 is equal to that of the first magnetic layer 11 after the third operation OP3. It is larger than the absolute value of the difference between the electric resistance between the first region 21a and the electric resistance between the first magnetic layer 11 and the first region 21a after the fourth operation OP4.

The plurality of stacked bodies respectively correspond to the plurality of memory cells. Different information can be stored in a plurality of memory cells. When storing information in a plurality of memory cells, for example, after storing one of "1" and "0" in the plurality of memory cells, "1" and " The other "0" may be stored. For example, one of “1” and “0” may be stored in one of the plurality of memory cells, and then one of “0” and “0” may be stored in another one of the plurality of memory cells.

In the above, the first area 21a and the fourth area 21d can be replaced with each other. For example, the electric resistance described above may be the electric resistance between the first magnetic layer 11 and the fourth region 21d. The electric resistance may be the electric resistance between the second magnetic layer 12 and the fourth region 21d.

Hereinafter, an example of another operation will be described.
25A to 25C are schematic cross-sectional views illustrating the magnetic memory device according to the embodiment.
As shown in FIG. 25A, in the magnetic memory device 120 according to the embodiment, a plurality of stacked bodies (first stacked body SB1 and second stacked body SB2) are provided. In the magnetic memory device 120, the current flowing through the first stacked body SB1 and the current flowing through the second stacked body SB2 are different.

The first stacked body SB1 overlaps with the third region 21c in the Z-axis direction. The second stacked body SB2 overlaps the fifth region 21e in the Z-axis direction.

For example, the first terminal T1 is electrically connected to the first region 21a of the first conductive layer 21. The second terminal T2 is electrically connected to the fourth region 21d. The third terminal T3 is electrically connected to the second region 21b. The fourth terminal T4 is electrically connected to the first magnetic layer 11. The fifth terminal T5 is electrically connected to the second magnetic layer 12.

As shown in FIG. 25A, in one operation QP1, the first current Iw1 flows from the first terminal T1 toward the third terminal T3, and the third current Iw3 flows from the second terminal T2 to the third terminal T3. Flow toward. The direction of the current (first current Iw1) at the position of the first stacked body SB1 is opposite to the direction of the current (third current Iw3) at the position of the second stacked body SB2. In such an operation QP1, the direction of spin Hall torque acting on the first opposing magnetic layer 11c of the first stacked body SB1 is the same as the direction of spin Hall torque acting on the second opposing magnetic layer 12c of the second stacked body SB2. The opposite is true.

In another operation QP2 shown in FIG. 25(b), the second current Iw2 flows from the third terminal T3 to the first terminal T1, and the fourth current Iw4 flows from the third terminal T3 to the second terminal T2. Flowing. The direction of the current (second current Iw2) at the position of the first stacked body SB1 is opposite to the direction of the current (fourth current Iw4) at the position of the second stacked body SB2. In such operation QP2, the direction of the spin Hall torque acting on the first opposing magnetic layer 11c of the first stacked body SB1 is the same as the direction of the spin Hall torque acting on the second opposing magnetic layer 12c of the second stacked body SB2. The opposite is true.

As shown in FIGS. 25A and 25B, the direction of the magnetization 12cM of the second counter magnetic layer 12c is opposite to the direction of the magnetization 11cM of the first counter magnetic layer 11c. On the other hand, the direction of the magnetization 12M of the second magnetic layer 12 is the same as the direction of the magnetization 11M of the first magnetic layer 11. In this way, the magnetization information in the opposite direction is stored between the first stacked body SB1 and the second stacked body SB2. For example, the information (data) in the case of the operation QP1 corresponds to “1”. For example, the information (data) in the case of the operation QP2 corresponds to “0”. By such an operation, for example, the reading speed can be increased as described later.

In the operation QP1 and the operation QP2, the magnetization 11cM of the first opposing magnetic layer 11c and the spin current of the electron (polarized electron) flowing in the first conductive layer 21 interact with each other. The direction of the magnetization 11 cM and the direction of the spin of the polarized electron have a parallel or antiparallel relationship. The magnetization 11cM of the first opposing magnetic layer 11c precesses and is inverted. In the operation QP1 and the operation QP2, the direction of the magnetization 12cM of the second opposing magnetic layer 12c and the direction of the spin of the polarized electron have a parallel or antiparallel relationship. The magnetization 12cM of the second opposing magnetic layer 12c precesses and is inverted.

FIG. 25C illustrates the read operation in the magnetic storage device 120.
In the read operation QP3, the potential of the fourth terminal T4 is set to the fourth potential V4. Then, the potential of the fifth terminal T5 is set to the fifth potential V5. The fourth potential V4 is, for example, a ground potential. The potential difference between the fourth potential V4 and the fifth potential V5 is ΔV. Two electric resistances in each of the plurality of stacked bodies are a high resistance Rh and a low resistance Rl. The high resistance Rh is higher than the low resistance Rl. For example, the resistance when the magnetization 11M and the magnetization 11cM are antiparallel corresponds to the high resistance Rh. For example, the resistance when the magnetization 11M and the magnetization 11cM are parallel to each other corresponds to the low resistance Rl. For example, the resistance when the magnetization 12M and the magnetization 12cM are antiparallel corresponds to the high resistance Rh. For example, the resistance when the magnetization 12M and the magnetization 12cM are parallel to each other corresponds to the low resistance Rl.

For example, in the operation QP1 (“1” state) illustrated in FIG. 25A, the potential Vr1 of the third terminal T3 is represented by the expression (1).
Vr1={Rl/(Rl+Rh)}×ΔV (1)
On the other hand, in the state of the operation QP2 (“0” state) illustrated in FIG. 25B, the potential Vr2 of the third terminal T3 is represented by the expression (2).
Vr2={Rh/(Rl+Rh)}×ΔV (2)
Therefore, the potential change ΔVr between the “1” state and the “0” state is expressed by the equation (3).
ΔVr=Vr2-Vr1={(Rh-Rl)/(Rl+Rh)}×ΔV (3)
The potential change ΔVr is obtained by measuring the potential of the third terminal T3.

Compared to the case where a constant current is supplied to the stacked body (magneto-resistive element) to measure the voltage (potential difference) between the two magnetic layers of the magneto-resistive element, in the above read operation QP3, for example, at the time of reading Energy consumption can be reduced. In the above read operation QP3, for example, high speed read can be performed.

In the above operation QP1 and operation QP2, the perpendicular magnetic anisotropy of each of the first opposing magnetic layer 11c and the second opposing magnetic layer 12c can be controlled using the fourth terminal T4 and the fifth terminal T5. As a result, the write current can be reduced. For example, the write current can be about 1/2 of the write current when writing is performed without using the fourth terminal T4 and the fifth terminal T5. For example, the write charge can be reduced. The relationship between the polarity of the voltage applied to the fourth terminal T4 and the fifth terminal T5 and the increase/decrease in perpendicular magnetic anisotropy depends on the materials of the magnetic layer and the first conductive layer 21.

In the operation QP1 illustrated in FIG. 25A, the first current Iw1 and the third current Iw3 are supplied to the second region 21b. In the operation QP2 shown in FIG. 25B, the second current Iw2 and the fourth current Iw4 are supplied to the second region 21b. In operations QP1 and QP2, the current density flowing in the second region 21b is higher than the current density flowing in the first region 21a or the fourth region 21d. The heat generation in the second region 21b is larger than the heat generation in the first region 21a and the heat generation in the fourth region 21d. By providing the first metal layer 31 aligned with the second region 21b in the Z-axis direction, heat dissipation in the second region 21b can be improved. Thereby, the heat generation of the magnetic storage device 120 can be suppressed and the durability of the magnetic storage device 120 can be improved.

26A to 26C are schematic cross-sectional views illustrating another magnetic memory device according to the embodiment.
The first terminal T1 to the fifth terminal T5 may be provided in another magnetic memory device according to the embodiment, and the operations QP1 to QP3 may be performed. For example, as shown in FIG. 26A, the magnetic memory device 230 according to the embodiment is provided with the first terminal T1 to the fifth terminal T5.

In the operation QP1 shown in FIG. 26A, the first current Iw1 flows from the first terminal T1 to the third terminal T3, and the third current Iw3 flows from the second terminal T2 to the third terminal T3.
In the operation QP2 shown in FIG. 26B, the second current Iw2 flows from the third terminal T3 toward the first terminal T1, and the fourth current Iw4 flows from the third terminal T3 toward the second terminal T2.
In the read operation QP3 shown in FIG. 26C, the potential of the fourth terminal T4 is set to the fourth potential V4. Then, the potential of the fifth terminal T5 is set to the fifth potential V5.

27A to 27C are schematic cross-sectional views illustrating another magnetic memory device according to the embodiment.
As shown in FIG. 27A, the magnetic memory device 240 according to the embodiment may be provided with the first terminal T1 to the fifth terminal T5. The operation of the magnetic storage device 240 shown in FIGS. 27A to 27C is the same as that of the magnetic storage device shown in FIGS. 25A to 25C or 26A to 26C. The operation is substantially the same.

In the operation QP1 shown in FIG. 27A, the first current Iw1 flows from the first terminal T1 to the third terminal T3, and the third current Iw3 flows from the second terminal T2 to the third terminal T3.
In the operation QP2 shown in FIG. 27B, the second current Iw2 flows from the third terminal T3 to the first terminal T1, and the fourth current Iw4 flows from the third terminal T3 to the second terminal T2.
In the read operation QP3 shown in FIG. 27C, the potential of the fourth terminal T4 is set to the fourth potential V4. Then, the potential of the fifth terminal T5 is set to the fifth potential V5.

By providing the first metal layer 31 also in the magnetic storage devices 230 and 240, heat dissipation in the second region 21b can be improved. Thereby, the heat generation of the magnetic storage devices 230 and 240 can be suppressed, and the durability of the magnetic storage devices 230 and 240 can be improved.

FIG. 28 is a schematic diagram showing the magnetic memory device according to the fourth embodiment.
As shown in FIG. 28, in the magnetic storage device 410, a memory cell array MCA, a plurality of first wirings (eg, word lines WL1 and WL2), a plurality of second wirings (eg, bit lines BL1, BL2, BL3, etc.). ) And the control part 70 are provided. The plurality of first wirings extend in one direction. The plurality of second wirings extend in another one direction. The control unit 70 includes a word line selection circuit 70WS, a first bit line selection circuit 70BSa, a second bit line selection circuit 70BSb, a first write circuit 70Wa, a second write circuit 70Wb, a first read circuit 70Ra, and a second line. The read circuit 70Rb is included. In the memory cell array MCA, a plurality of memory cells MC are arranged in an array.

For example, the switch Sw1 and the switch SwS1 are provided corresponding to one of the plurality of memory cells MC. These switches are considered to be included in one of the memory cells. These switches may be considered to be included in the control unit 70. These switches are, for example, transistors. One of the plurality of memory cells MC includes, for example, a stacked body (for example, the first stacked body SB1).

As described above, a plurality of stacked bodies (such as the first stacked body SB1 and the second stacked body SB2) may be provided on one first conductive layer 21. And a plurality of switches (switch Sw1, switch Sw2, etc.) may be provided in a plurality of layered products, respectively. In FIG. 28, one laminated body (laminated body SB1 and the like) and one switch (switch Sw1 and the like) are drawn corresponding to one first conductive layer 21 in order to make the diagram easy to see. There is.

As shown in FIG. 28, one end of the first stacked body SB1 is connected to the first conductive layer 21. The other end of the first stacked body SB1 is connected to one of the source and the drain of the switch Sw1. The other of the source and the drain of the switch Sw1 is connected to the bit line BL1. The gate of the switch Sw1 is connected to the word line WL1. One end (for example, the first region 21a) of the first conductive layer 21 is connected to one of the source and the drain of the switch SwS1. The other end (for example, the fourth region 21d) of the first conductive layer 21 is connected to the bit line BL3. The other of the source and the drain of the switch SwS1 is connected to the bit line BL2. The gate of the switch SwS1 is connected to the word line WL2.

In another one of the plurality of memory cells MC, the stacked body SBn, the switch Swn, and the switch SwSn are provided.

An example of the operation of writing information to the memory cell MC will be described.
The switch SwS1 of one memory cell MC (selected memory cell) for writing is turned on. For example, in the ON state, the word line WL2 to which the gate of the one switch SwS1 is connected is set to the high level potential. The potential is set by the word line selection circuit 70WS. The switch SwS1 in the other memory cells MC (non-selected memory cells) in the column including the one memory cell MC (selected memory cell) is also turned on. In one example, the word line WL1 connected to the gate of the switch Sw1 in the memory cell MC (selected memory cell) and the word lines WL1 and WL2 corresponding to other columns are set to a low level potential.

In FIG. 28, one stacked body and one switch Sw1 are drawn corresponding to one first conductive layer 21. As described above, the plurality of stacked bodies (the stacked body SB1 and the second stacked body SB2 and the like) and the plurality of switches (the switch Sw1 and the switch Sw2 and the like) are provided corresponding to one first conductive layer 21. In this case, for example, the switch connected to each of the plurality of stacked bodies is turned on. A selection voltage is applied to any of the plurality of stacked bodies. On the other hand, a non-selection voltage is applied to the other stacked bodies. Writing is performed to any of the above of the plurality of stacked bodies, and no writing is performed to the other stacked bodies. Selective writing is performed in the plurality of stacked bodies.

Bit lines BL2 and BL3 connected to the memory cell MC (selected cell) for writing are selected. The selection is performed by the first bit line selection circuit 70BSa and the second bit line selection circuit 70BSb. A write current is supplied to the selected bit lines BL2 and BL3. The write current is supplied by the first write circuit 70Wa and the second write circuit 70Wb. The write current flows from one of the first bit line selection circuit 70BSa and the second bit line selection circuit 70BSb toward the other of the first bit line selection circuit 70BSa and the second bit line selection circuit 70BSb. The write current makes it possible to change the magnetization direction of the storage layer (such as the first opposing magnetic layer 11c) of the MTJ element (such as the first stacked body SB1). When a write current flows from the other of the first bit line selection circuit 70BSa and the second bit line selection circuit 70BSb toward one of the first bit line selection circuit 70BSa and the second bit line selection circuit 70BSb, the storage layer of the MTJ element is formed. The magnetization direction of can be changed in the opposite direction. Writing is performed in this manner.

Hereinafter, an example of the operation of reading information from the memory cell MC will be described.
The word line WL1 connected to the memory cell MC (selected cell) for reading is set to a high level potential. The switch Sw1 in the memory cell MC (selected cell) is turned on. At this time, the switch Sw1 in the other memory cell MC (non-selected cell) in the column including the memory cell MC (selected cell) is also turned on. The word line WL2 connected to the gate of the switch SwS1 in the memory cell MC (selected cell) and the word lines WL1 and WL2 corresponding to other columns are set to a low level potential.

Bit lines BL1 and BL3 connected to the memory cell MC (selected cell) to be read are selected. The selection is performed by the first bit line selection circuit 70BSa and the second bit line selection circuit 70BSb. A read current is supplied to the selected bit line BL1 and bit line BL3. The supply of the read current is performed by the first read circuit 70Ra and the second read circuit 70Rb. The read current flows from one of the first bit line selection circuit 70BSa and the second bit line selection circuit 70BSb toward the other of the first bit line selection circuit 70BSa and the second bit line selection circuit 70BSb. For example, the voltage between the selected bit lines BL1 and BL3 is detected by the first read circuit 70Ra and the second read circuit 70Rb. For example, the difference between the magnetization of the storage layer (first opposed magnetic layer 11c) and the magnetization of the reference layer (first magnetic layer 11) of the MTJ element is detected. The difference includes whether the magnetization directions are parallel to each other (same direction) or antiparallel to each other (opposite direction). In this way, the read operation is performed.

For example, there are volatile (SRAM (Static Random Access Memory), DRAM (Dynamic Random Access Memory)) working memory, and non-volatile (NAND flash memory and HDD (Hard Disk Drive)) storage. The SRAM consumes a large amount of energy due to the leak current. The DRAM consumes a large amount of energy due to the refresh current.

In the working memory, the frequency during operation (Active) is higher than the frequency during standby (Standby). A large write charge is required during operation, which increases write energy. The energy saved during standby is consumed during operation, and it is difficult to reduce the total energy consumption.

It is possible that energy consumption can be reduced by using, for example, STT (Spin Transfer Torque)-MRAM (Magnetic Random Access Memory) as the lowest level cache memory (LLC (Last Level Cache)) that operates relatively infrequently. is there. However, when the STT-MRAM is used as the cache memory in the layer above the LLC, the operation frequency is remarkably increased. Therefore, a huge amount of energy is consumed.

In the embodiment, energy consumption can be reduced. In the embodiment, high speed operation can be obtained.

According to each of the embodiments described above, it is possible to provide a magnetic memory device capable of suppressing power loss or current leakage, and a manufacturing method thereof.

The embodiment may include the following configurations (for example, technical solutions).

(Structure 1)
A first conductive layer including a first region, a second region, and a third region between the first region and the second region;
A first magnetic layer,
A first opposing magnetic layer provided between the third region and the first magnetic layer in a first direction intersecting a second direction from the first region to the second region;
A first non-magnetic layer provided between the first magnetic layer and the first opposing magnetic layer;
A non-magnetic first metal layer, wherein the direction from the first opposing magnetic layer to at least a part of the first metal layer is along the second direction;
A non-magnetic second metal layer, wherein the direction from the first magnetic layer to the second metal layer is along the second direction;
A first insulating portion provided between the first metal layer and the second metal layer in the first direction,
Magnetic storage device.

(Structure 2)
The direction from the second region to the first metal layer is along the first direction,
2. The magnetic storage device according to configuration 1, wherein at least a part of the second area in the first direction has a length shorter than a length of the third area in the first direction.

(Structure 3)
A second magnetic layer,
A second opposing magnetic layer,
A second non-magnetic layer,
Further equipped with,
The first conductive layer further includes a fourth region and a love region 5,
The second region is located between the third region and the fourth region in the second direction,
The fifth region is located between the second region and the fourth region in the second direction,
The second opposing magnetic layer is provided between the fifth region and the second magnetic layer in the first direction,
The second non-magnetic layer is provided between the second magnetic layer and the second opposing magnetic layer,
3. The magnetic memory device according to configuration 1 or 2, wherein the first metal layer is provided between the first opposing magnetic layer and the second opposing magnetic layer in the second direction.

(Structure 4)
Further comprising a non-magnetic third metal layer,
The third metal layer is provided between the second metal layer and the second magnetic layer in the second direction,
The first insulating portion is further between the first metal layer and the third metal layer in the first direction, and between the second metal layer and the third metal layer in the second direction. The magnetic storage device according to configuration 3, which is provided.

(Structure 5)
The first conductive layer includes a first metal,
The magnetic storage device according to any one of configurations 1 to 4, wherein the first metal layer and the second metal layer include a second metal.

(Structure 6)
The first metal is at least one selected from the group consisting of Ta, W, Hf, Pt, Re, Os, Ir, Pd, Cu, Ag, and Au,
6. The magnetic storage device according to configuration 5, wherein the second metal is at least one selected from the group consisting of Ru, Ir, Pd, Cu, Rh, Mo, Ta, W, Os, Pt, and Al.

(Structure 7)
A first conductive layer including a first region, a second region, and a third region between the first region and the second region;
A first magnetic layer,
A first opposing magnetic layer provided between the third region and the first magnetic layer in a first direction intersecting a second direction from the first region to the second region;
A first non-magnetic layer provided between the first magnetic layer and the first opposing magnetic layer;
A non-magnetic first metal layer, the direction from the second region to the first metal layer is along the first direction, and the direction from the first opposing magnetic layer to at least a part of the first metal layer. The direction is along the second direction, and the length of the first metal layer in the third direction intersecting the first surface including the first direction and the second direction is the length of the first region in the third direction. Longer than the first metal layer,
Magnetic storage device.

(Structure 8)
8. The magnetic memory device according to configuration 7, wherein the length of the first metal layer in the third direction is longer than the length of the first opposing magnetic layer in the third direction.

(Configuration 9)
The first metal layer is
A first metal part,
A second metal portion located between the first conductive layer and the first metal portion in the first direction;
Including,
9. The magnetic storage device according to the configuration 7 or 8, wherein the length of the first metal portion in the third direction is longer than the length of the second metal portion in the third direction.

(Configuration 10)
The first metal layer includes a third end portion, a fourth end portion, and an intermediate portion,
The intermediate portion is located between the third end portion and the fourth end portion in the third direction,
The configuration 7 or 8 wherein the length of the intermediate portion in the first direction is shorter than the length of the third end portion in the first direction and shorter than the length of the fourth end portion in the first direction. Magnetic storage device.

(Configuration 11)
11. The magnetic memory device according to configuration 10, wherein a part of the first conductive layer is provided between a part of the third end and a part of the fourth end in the third direction.

(Configuration 12)
12. The magnetic memory device according to claim 1, wherein at least a part of the first metal layer is curved.

(Configuration 13)
Further comprising a controller electrically connected to the first region and the second region,
The control unit at least performs a first operation of supplying a first current from the first region to the second region to the conductive layer and a second current from the second region to the first region. 13. The magnetic memory device according to any one of Configurations 1 to 12, which implements a second operation of supplying the layer.

(Configuration 14)
The control unit is further electrically connected to the first magnetic layer,
The control unit is
In the first operation, a first potential difference between the first region and the first magnetic layer is a first voltage,
In the second operation, the first potential difference is the first voltage,
The control unit further performs a third operation and a fourth operation,
The control unit is
In the third operation, a first potential difference between the first region and the first magnetic layer is set to a second voltage different from the first voltage, and the first current is supplied to the conductive layer,
In the fourth operation, the first potential difference is the second voltage, the second current is supplied to the conductive layer,
The first electric resistance between the first magnetic layer and the conductive layer after the first operation is the second electric resistance between the first magnetic layer and the conductive layer after the second operation. Different,
The absolute value of the difference between the first electric resistance and the second electric resistance is equal to the electric resistance between the first magnetic layer and the conductive layer after the third operation, and the absolute value after the fourth operation. 14. The magnetic memory device according to Configuration 13, which is larger than the absolute value of the difference between the electrical resistance between the magnetic layer and the conductive layer.

In the specification of the application, “vertical” and “parallel” include not only strict vertical and strict parallel but also variations in a manufacturing process, and may be substantially vertical and substantially parallel. Good.

The embodiments of the present invention have been described above with reference to specific examples. However, the embodiments of the present invention are not limited to these specific examples. For example, the specific configuration of each element such as a magnetic layer, a facing magnetic layer, a non-magnetic layer, a conductive layer, a metal layer, an insulating portion, and an insulating layer included in a magnetic storage device is within a range known to those skilled in the art. The present invention can be carried out in the same manner by making appropriate selections, and is within the scope of the present invention as long as the same effect can be obtained.

Further, a combination of any two or more elements of the respective specific examples within a technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

In addition, all magnetic storage devices that can be appropriately modified and implemented by those skilled in the art based on the magnetic storage devices described above as the embodiments of the present invention are also included in the scope of the present invention as long as they include the gist of the present invention. Belong to.

In addition, within the scope of the idea of the present invention, those skilled in the art can think of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. ..

While some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the invention described in the claims and the scope equivalent thereto.

11 1st magnetic layer, 11M magnetization, 11c 1st counter magnetic layer, 11cM magnetization, 11i 1st nonmagnetic layer, 12 2nd magnetic layer, 12M magnetization, 12c 2nd counter magnetic layer, 12cM magnetization, 12i 2nd nonmagnetic Layer, 20s substrate, 21 first conductive layer, 21F, 21Fa conductive film, 21a first region, 21b second region, 21c third region, 21d fourth region, 21e fifth region, 21o1 first overlapping part, 21o2 second 2 overlapping part, 21s1 1st side end, 21s2 2nd side end, 21s3 3rd side end, 21s4 4th side end, 22 2nd conductive layer, 22F, 22Fa, 22Fb conductive film, 25 insulating part, 30a 1st connection part, 30b 2nd connection part, 30c 3rd connection part, 31 1st metal layer, 31F metal film, 31a 1st metal part, 31b 2nd metal part, 31e1 1st end part, 31e2 2nd end Part, 31e3 third end part, 31e4 fourth end part, 31m intermediate part, 32 second metal layer, 32F metal film, 33 third metal layer, 33F metal film, 41 first insulating part, 41F insulating film, 42th 2 insulating parts, 42F insulating film, 51 1st insulating layer, 51a 1st insulating region, 51b 2nd insulating region, 51c 3rd insulating region, 52 2nd insulating layer, 52a, 52b insulating region, 61 1st insulating film, 62 second insulating film, 70 control unit, 70BSa first bit line selection circuit, 70BSb second bit line selection circuit, 70Ra, 70Rb circuit, 70WS word line selection circuit, 70Wa, 70Wb circuit, 70a first wiring, 70b second Wiring, 75 Drive circuit, 110-140, 210-280, 310-330, 410 Magnetic storage device, BL1-BL3 bit line, IF1-IF4 insulating film, IR insulating region, Iw1 first current, Iw2 second current, Iw3 Third current, Iw4 Fourth current, L1 to L4 length, MC memory cell, MCA memory cell array, MF1, MF1a, MF2, MF2a magnetic film, NF, NFa non-magnetic film, OP1 first operation, OP2 second operation, OP3 Third motion, O P4 4th operation, QP1 to QP3 operation, R1, R2 resist, RF redeposition film, Rh high resistance, Rl low resistance, SB1 first laminated body, SB2 second laminated body, SBn laminated body, SF, SFa laminated film, Sw1 1st switch, Sw2 2nd switch, SwS1 switch, SwSn switch, Swn switch, T1 1st terminal, T2 2nd terminal, T3 3rd terminal, T4 4th terminal, T5 5th terminal, Tr1, Tr2 groove, V0 Potential, V1 first voltage, V2 second voltage, V4 fourth potential, V5 fifth potential, Vr1, Vr2 potential, WL1, WL2 word line, i1 to i6 current, s1 first side, s2 second side, s3 second 3 sides, s4 4th side, s5-s8 side

Claims (10)

A first conductive layer including a first region, a second region, and a third region between the first region and the second region;
A first magnetic layer,
A first opposing magnetic layer provided between the third region and the first magnetic layer in a first direction intersecting a second direction from the first region to the second region;
A first non-magnetic layer provided between the first magnetic layer and the first opposing magnetic layer;
A non-magnetic first metal layer, wherein the direction from the first opposing magnetic layer to at least a part of the first metal layer is along the second direction;
In the first insulating part, the direction from the first metal layer to the first insulating part is along the first direction, and the direction from at least a part of the first magnetic layer to the first insulating part is The first insulating portion along the second direction,
A first insulating layer provided between the first metal layer and the first opposing magnetic layer in the second direction;
Magnetic storage device. A second conductive layer provided between the third region and the first opposing magnetic layer,
The direction from the second conductive layer to a part of the first metal layer is along the second direction,
The magnetic storage device according to claim 1, wherein the first insulating layer is further provided between the first metal layer and the second conductive layer and between the first insulating portion and the first magnetic layer. .. The first conductive layer includes a first metal,
The first metal layer includes a second metal,
The second conductive layer includes a third metal,
The first insulating layer is
A first insulating region containing the third metal and at least one selected from the group consisting of oxygen and nitrogen;
The first metal and at least one selected from the group consisting of oxygen and nitrogen, and in the second direction, between the first insulating region and the first metal layer, and the first insulating region. A second insulating region provided between the first insulating portion and
The magnetic storage device according to claim 2, further comprising: The first metal is at least one selected from the group consisting of Ta, W, Hf, Pt, Re, Os, Ir, Pd, Cu, Ag, and Au,
The second metal is at least one selected from the group consisting of Ru, Ir, Pd, Cu, Rh, Mo, Ta, W, Os, Pt, and Al,
The magnetic storage device according to claim 3, wherein the third metal is at least one selected from the group consisting of Hf, Mg, Li, Sc, Y, Zr, Ti, Nb, V, and Al. The first metal layer includes a first end and an intermediate portion,
The position of the first end portion in the second direction is located between the position of the first opposing magnetic layer in the second direction and the position of the intermediate portion in the second direction,
The magnetic storage device according to claim 1, wherein a length of the intermediate portion in the first direction is shorter than a length of the first end portion in the first direction. A part of the first insulating portion is provided between the first metal layer and the first insulating layer in the second direction,
The first insulating portion includes at least one selected from the group consisting of Al and Si, and at least one selected from the group consisting of oxygen and nitrogen,
The first insulating layer is at least one selected from the group consisting of Ta, W, Hf, Pt, Re, Os, Ir, Pd, Cu, Ag, and Au, and selected from the group consisting of oxygen and nitrogen. The magnetic storage device according to claim 1, further comprising at least one. 7. The magnetic storage device according to claim 1, wherein at least a part of the first metal layer is curved. Further comprising a controller electrically connected to the first region and the second region,
The controller at least performs a first operation of supplying a first current from the first region to the second region to the conductive layer and a second current from the second region to the first region. The magnetic storage device according to claim 1, wherein a second operation of supplying the layer is performed. The control unit is further electrically connected to the first magnetic layer,
The control unit is
In the first operation, a first potential difference between the first region and the first magnetic layer is a first voltage,
In the second operation, the first potential difference is the first voltage,
The control unit further performs a third operation and a fourth operation,
The control unit is
In the third operation, a first potential difference between the first region and the first magnetic layer is set to a second voltage different from the first voltage, and the first current is supplied to the conductive layer,
In the fourth operation, the first potential difference is the second voltage, the second current is supplied to the conductive layer,
The first electric resistance between the first magnetic layer and the conductive layer after the first operation is the second electric resistance between the first magnetic layer and the conductive layer after the second operation. Different,
The absolute value of the difference between the first electric resistance and the second electric resistance is equal to the electric resistance between the first magnetic layer and the conductive layer after the third operation, and the absolute value after the fourth operation. 9. The magnetic memory device according to claim 8, wherein the absolute value of the difference between the electric resistance between one magnetic layer and the conductive layer is larger than the absolute value. A first conductive film, a first magnetic film provided on a part of the first conductive film, a non-magnetic film provided on the first magnetic film, and a non-magnetic film provided on the non-magnetic film A second magnetic film, a first metal film is formed on the surface of the first conductive film and the surface of the first magnetic film, and a second metal film is formed on the surface of the second magnetic film. A two metal film is formed, the second metal film is separated from the first metal film,
An insulating film is formed between the first metal film and the second metal film,
Method of manufacturing magnetic storage device.

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