JP2020074455A - Method for manufacturing semiconductor device, substrate processing device, and program - Google Patents

Abstract

To control in-plane film thickness distribution of a film formed on a substrate.SOLUTION: A method for manufacturing a semiconductor includes the steps of: preparing a substrate; and supplying inert gas from a first supply section to the substrate, supplying inert gas from a second supply section to the substrate, supplying processing gas from a third supply section provided on an opposite side of the first supply section across a straight line passing through the second supply section and a center of the substrate with respect to the substrate to form a film on the substrate. In the step of forming the film, by controlling balance between a flow rate of the inert gas supplied from the first supply section and a flow rate of the inert gas supplied from the second supply section, in-plane film thickness distribution of the film formed on the substrate is adjusted.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a semiconductor device manufacturing method, a substrate processing apparatus, and a program.

  As one of the steps of manufacturing a semiconductor device, a process of forming a film on a substrate may be performed (see, for example, Patent Document 1).

JP, 2010-118462, A

  An object of the present invention is to provide a technique capable of controlling the in-plane film thickness distribution of a film formed on a substrate.

According to one aspect of the invention,
A step of preparing a substrate,
An inert gas is supplied to the substrate from a first supply unit, an inert gas is supplied to the substrate from a second supply unit, and the second supply unit and the center of the substrate are supplied to the substrate. Forming a film on the substrate by supplying a first processing gas from a third supply unit provided on the opposite side of the first supply unit across a straight line passing through
In the step of forming the film, by controlling the balance between the flow rate of the inert gas supplied from the first supply unit and the flow rate of the inert gas supplied from the second supply unit, A technique is provided for adjusting the in-plane film thickness distribution of the film formed on the substrate.

  According to the present invention, it is possible to control the in-plane film thickness distribution of the film formed on the substrate.

FIG. 2 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus preferably used in an embodiment of the present invention, showing a processing furnace portion in a vertical sectional view. It is a schematic block diagram of a part of vertical processing furnace of the substrate processing apparatus suitably used in the embodiment of the present invention, and is a view showing a part of the processing furnace in a sectional view taken along the line AA of FIG. 1. It is a schematic block diagram of the controller of the substrate processing apparatus suitably used in the embodiment of the present invention, and is a block diagram showing the control system of the controller. It is a figure which shows the film-forming sequence of one Embodiment of this invention. (A) And (b) is a cross-sectional view which shows the modification of a vertical processing furnace, respectively, and is a figure which shows a reaction tube, a buffer chamber, a nozzle, etc. partially extracted. (A) And (b) is a figure which shows the film thickness measurement result in the outer peripheral part of the board | substrate of the film formed on the board | substrate, respectively.

<One Embodiment of the Present Invention>
An embodiment of the present invention will be described below with reference to FIGS.

(1) Configuration of Substrate Processing Apparatus As shown in FIG. 1, the processing furnace 202 has a heater 207 as a heating mechanism (temperature adjusting unit). The heater 207 has a cylindrical shape and is vertically installed by being supported by a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) gas by heat.

Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and has a cylindrical shape with an upper end closed and a lower end opened. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of, for example, a metal material such as stainless steel (SUS), and has a cylindrical shape with an open upper end and a lower end. The upper end of the manifold 209 is engaged with the lower end of the reaction tube 203, and is configured to support the reaction tube 203. An O-ring 220a as a seal member is provided between the manifold 209 and the reaction tube 203. The reaction tube 203 is vertically installed like the heater 207. A processing container (reaction container) is mainly configured by the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow cylindrical portion of the processing container. The processing chamber 201 is configured to be able to accommodate the wafer 200 as a substrate. The wafer 200 is processed in the processing chamber 201.

  Nozzles 249 a to 249 c as first to third supply units are provided in the processing chamber 201 so as to penetrate the sidewalls of the manifold 209. Gas supply pipes 232a to 232c are connected to the nozzles 249a to 249c, respectively. The nozzles 249a to 249c are different nozzles, and each of the nozzles 249a and 249c is provided adjacent to the nozzle 249b.

  Mass flow controllers (MFC) 241a to 241c, which are flow rate controllers (flow rate control units), and valves 243a to 243c, which are open / close valves, are provided in the gas supply pipes 232a to 232c in order from the upstream side of the gas flow. .. Gas supply pipes 232d and 232e are connected to the gas supply pipes 232a and 232b on the downstream side of the valves 243a and 243b, respectively. Gas supply pipes 232f and 232g are connected to the gas supply pipe 232c downstream of the valve 243c. The gas supply pipes 232d to 232g are respectively provided with MFCs 241d to 241g and valves 243d to 243g in order from the upstream side of the gas flow.

  As shown in FIG. 2, the nozzles 249a to 249c are arranged in the annular space in a plan view between the inner wall of the reaction tube 203 and the wafer 200, along the upper part of the inner wall of the reaction tube 203 and the upper part of the wafer 200. They are provided so as to rise upward in the arrangement direction. That is, the nozzles 249a to 249c are provided along the wafer arranging region in a region horizontally surrounding the wafer arranging region on the side of the wafer arranging region where the wafers 200 are arranged. In a plan view, the nozzle 249b is arranged so as to face the exhaust port 231a, which will be described later, in a straight line across the center of the wafer 200 loaded into the processing chamber 201. The nozzles 249a and 249c are arranged so as to sandwich the straight line L passing through the nozzle 249b and the center of the exhaust port 231a from both sides along the inner wall of the reaction tube 203 (outer peripheral portion of the wafer 200). The straight line L is also a straight line passing through the nozzle 249b and the center of the wafer 200. That is, it can be said that the nozzle 249c is provided on the opposite side of the nozzle 249a with the straight line L interposed therebetween. The nozzles 249a and 249c are arranged in line symmetry with the straight line L as the axis of symmetry. Gas supply holes 250a to 250c for supplying gas are provided on the side surfaces of the nozzles 249a to 249c, respectively. Each of the gas supply holes 250a to 250c is opened so as to face (face) the exhaust port 231a in a plan view, and the gas can be supplied toward the wafer 200. A plurality of gas supply holes 250a to 250c are provided from the lower part to the upper part of the reaction tube 203.

From the gas supply pipe 232a, for example, a silane-based gas containing silicon (Si) as a main element forming a seed layer described later is supplied as a processing gas (second processing gas) through the MFC 241a, the valve 243a, and the nozzle 249a. And is supplied into the processing chamber 201. As the silane-based gas, a silicon hydride gas containing no halogen element can be used, and for example, disilane (Si ₂ H ₆ , abbreviation: DS) gas can be used.

From the gas supply pipe 232b, for example, a gas containing Si and a halogen element, that is, a halosilane-based gas as a processing gas (third processing gas) into the processing chamber 201 via the MFC 241b, the valve 243b, and the nozzle 249b. Supplied. The halogen element includes chlorine (Cl), fluorine (F), bromine (Br), iodine (I) and the like. As the halosilane-based gas, for example, a chlorosilane-based gas containing Si and Cl can be used, and for example, dichlorosilane (SiH ₂ Cl ₂ , abbreviation: DCS) gas can be used.

From the gas supply pipe 232c, as a processing gas (first processing gas), for example, a silane-based gas containing Si as a main element forming a film formed on the wafer 200 passes through the MFC 241c, the valve 243c, and the nozzle 249c. It is supplied into the processing chamber 201 via the. As the silane-based gas, a silicon hydride gas containing no halogen element can be used, and for example, monosilane (SiH ₄ , abbreviation: MS) gas can be used.

From the gas supply pipes 232d to 232f, for example, nitrogen (N ₂ ) gas is supplied as an inert gas through the MFCs 241d to 241f, the valves 243d to 243f, the gas supply pipes 232a to 232c, and the nozzles 249a to 249c, respectively. It is supplied into 201. The N ₂ gas acts as a purge gas, a carrier gas, a diluting gas, and the like, and further acts as a film thickness distribution control gas that controls the film thickness distribution in the wafer surface of the film formed on the wafer 200.

As the dopant gas, for example, a gas containing impurities (dopants) is supplied from the gas supply pipe 232g into the processing chamber 201 via the MFC 241g, the valve 243g, the gas supply pipe 232c, and the nozzle 249c. As the dopant gas, it is possible to use a gas containing an element that is one of a group III element (group 13 element) and a group V element (group 15 element) and becomes solid by itself, For example, phosphine (PH ₃ , abbreviated as PH) gas, which is a gas containing a Group V element, can be used.

  A processing gas supply system is mainly configured by the gas supply pipes 232a to 232c, the MFCs 241a to 241c, and the valves 243a to 243c. It may be considered that the processing gas supply system includes the gas supply pipe 232g, the MFC 241g, and the valve 243g. An inert gas supply system mainly includes the gas supply pipes 232d to 232f, the MFCs 241d to 241f, and the valves 243d to 243f. In this specification, the gas supply system including the gas supply pipe 232d, the MFC 241d, and the valve 243d is also referred to as a first supply system. The gas supply pipe 232a, the MFC 241a, and the valve 243a may be included in the first supply system. The gas supply system including the gas supply pipe 232e, the MFC 241e, and the valve 243e is also referred to as a second supply system. The gas supply pipe 232b, the MFC 241b, and the valve 243b may be included in the second supply system. The gas supply system including the gas supply pipe 232c, the MFC 241c, and the valve 243c is also referred to as a third supply system. It may be considered that the gas supply pipes 232g, 232f, the MFCs 241g, 241f, and the valves 243g, 243f are included in the third supply system.

  Any or all of the various supply systems described above may be configured as an integrated supply system 248 in which valves 243a to 243g and MFCs 241a to 241g are integrated. The integrated supply system 248 is connected to each of the gas supply pipes 232a to 232g, and supplies various gases into the gas supply pipes 232a to 232g, that is, opens and closes the valves 243a to 243g and MFCs 241a to 241g. The flow rate adjusting operation and the like are configured to be controlled by the controller 121 described later. The integrated type supply system 248 is configured as an integrated type or a divided type integrated unit, and can be attached to and detached from the gas supply pipes 232a to 232g in units of integrated units. It is configured so that maintenance, replacement, expansion, etc. can be performed in units of integrated units.

  Below the side wall of the reaction tube 203, an exhaust port 231a for exhausting the atmosphere in the processing chamber 201 is provided. As shown in FIG. 2, the exhaust port 231a is provided at a position facing (facing) the nozzles 249a to 249c (gas supply holes 250a to 250c) with the wafer 200 interposed therebetween in a plan view. The exhaust port 231a may be provided along the upper part of the side wall of the reaction tube 203, that is, along the wafer array region. An exhaust pipe 231 is connected to the exhaust port 231a. In the exhaust pipe 231, a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure regulator) are provided. A vacuum pump 246 as a vacuum exhaust device is connected. The APC valve 244 can perform vacuum exhaust and vacuum exhaust stop in the processing chamber 201 by opening and closing the valve in a state where the vacuum pump 246 is operated, and further, in a state where the vacuum pump 246 is operated, The pressure inside the processing chamber 201 can be adjusted by adjusting the valve opening degree based on the pressure information detected by the pressure sensor 245. An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may be included in the exhaust system.

  Below the manifold 209, a seal cap 219 is provided as a furnace port lid that can hermetically close the lower end opening of the manifold 209. The seal cap 219 is made of, for example, a metal material such as SUS and has a disc shape. An O-ring 220b is provided on the upper surface of the seal cap 219 as a seal member that contacts the lower end of the manifold 209. Below the seal cap 219, a rotation mechanism 267 for rotating the boat 217 described later is installed. The rotating shaft 255 of the rotating mechanism 267 penetrates the seal cap 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 217 by rotating the boat 217. The seal cap 219 is configured to be vertically moved up and down by a boat elevator 115 as an elevating mechanism installed outside the reaction tube 203. The boat elevator 115 is configured as a transfer device (transfer mechanism) that moves the wafer 200 in and out (transfers) the wafer 200 by moving the seal cap 219 up and down. Below the manifold 209, there is provided a shutter 219s as a furnace port lid that can hermetically close the lower end opening of the manifold 209 in a state where the seal cap 219 is lowered and the boat 217 is carried out from the processing chamber 201. The shutter 219s is made of a metal material such as SUS and has a disk shape. On the upper surface of the shutter 219s, an O-ring 220c is provided as a seal member that contacts the lower end of the manifold 209. The opening / closing operation of the shutter 219s (elevating operation, rotating operation, etc.) is controlled by the shutter opening / closing mechanism 115s.

  The boat 217 as the substrate support is configured to support a plurality of wafers 200, for example, 25 to 200 wafers 200 in a horizontal posture and in a vertically aligned manner with the centers thereof aligned with each other in a multi-stage manner, that is, It is configured to be arranged at intervals. The boat 217 is made of, for example, a heat resistant material such as quartz or SiC. Below the boat 217, a plurality of heat insulating plates 218 made of a heat resistant material such as quartz or SiC are supported in multiple stages.

  A temperature sensor 263 as a temperature detector is installed in the reaction tube 203. The temperature inside the process chamber 201 has a desired temperature distribution by adjusting the degree of energization to the heater 207 based on the temperature information detected by the temperature sensor 263. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

  As shown in FIG. 3, a controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. Has been done. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via the internal bus 121e. An input / output device 122 configured as, for example, a touch panel or the like is connected to the controller 121.

  The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which a procedure, conditions, etc. of the substrate processing, which will be described later, are stored in a readable manner. The process recipe is a combination that causes the controller 121 to execute each procedure in the substrate processing described below and obtains a predetermined result, and functions as a program. Hereinafter, process recipes, control programs, and the like are collectively referred to simply as programs. The process recipe is also simply referred to as a recipe. When the term program is used in this specification, it may include only a recipe alone, only a control program alone, or both of them. The RAM 121b is configured as a memory area (work area) in which programs and data read by the CPU 121a are temporarily stored.

  The I / O port 121d includes the MFCs 241a to 241g, the valves 243a to 243g, the pressure sensor 245, the APC valve 244, the vacuum pump 246, the temperature sensor 263, the heater 207, the rotating mechanism 267, the boat elevator 115, the shutter opening / closing mechanism 115s, and the like. It is connected to the.

  The CPU 121a is configured to read and execute the control program from the storage device 121c, and also read the recipe from the storage device 121c in response to input of an operation command from the input / output device 122. The CPU 121a adjusts the flow rates of various gases by the MFCs 241a to 241g, opens / closes the valves 243a to 243g, opens / closes the APC valve 244, and adjusts the pressure by the APC valve 244 based on the pressure sensor 245 so as to follow the contents of the read recipe. Operation, start and stop of the vacuum pump 246, temperature adjustment operation of the heater 207 based on the temperature sensor 263, rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, raising / lowering operation of the boat 217 by the boat elevator 115, shutter opening / closing mechanism 115s. Is configured to control the opening / closing operation of the shutter 219s.

  The controller 121 can be configured by installing the above program stored in the external storage device 123 into a computer. The external storage device 123 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, and a semiconductor memory such as a USB memory. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both of them. Note that the program may be provided to the computer by using communication means such as the Internet or a dedicated line without using the external storage device 123.

(2) Substrate processing step An example of a substrate processing sequence for forming a film on a substrate, that is, a film forming sequence example will be described with reference to FIG. To do. In the following description, the operation of each part of the substrate processing apparatus is controlled by the controller 121.

In the film forming sequence shown in FIG.
After preparing the wafer 200 as a substrate,
The _{N 2} gas as from the inert gas nozzles 249a of the first supply unit and supplied to the wafer 200, supplying the _{N 2} gas as the inert gas from the nozzle 249b of the second supply unit to the wafer 200 Then, in plan view with respect to the wafer 200, the MS as the first processing gas is supplied from the nozzle 249c as the third supply unit provided on the side opposite to the nozzle 249a with the straight line L passing through the nozzle 249b and the center of the wafer 200 interposed therebetween. A step of forming a P-doped Si film, that is, a film containing Si to which P is added (doped) on the wafer 200 by supplying a gas and a PH gas as a dopant gas (Si film forming step) is performed. In this specification, the P-doped Si film is also simply referred to as a Si film.

Further, in the film forming sequence shown in FIG.
After preparing the wafer 200 and before performing the above Si film forming step,
Supplying a DS gas as the second process gas from the nozzle 249a to the wafer 200, the _{N 2} gas supplied from the nozzle 249b to the wafer 200, the _{N 2} gas supplied from the nozzle 249c to the wafer 200, A step of forming a layer containing Si, that is, a Si layer as a seed layer on the wafer 200 (seed layer forming step) is performed. Hereinafter, this Si layer is also referred to as a Si seed layer.

Specifically, in the seed layer forming step,
Step 1 of supplying DCS gas as the third processing gas to the wafer 200 from any of the nozzles 249a to 249c (here, the nozzle 249b);
Supplying a DS gas from the nozzle 249a to the wafer 200, the _{N 2} gas supplied from the nozzle 249b to the wafer 200, and Step 2 for supplying from _{N 2} gas nozzle 249c to the wafer 200,
The cycle of alternately performing is performed a predetermined number of times.

In the above description of the Si film formation step, and the flow rate of _{N 2} gas supplied from the nozzle 249a, by controlling the flow rate of _{N 2} gas supplied from the nozzle 249 b, the balance of, is formed on the wafer 200 Si The in-plane film thickness distribution of the film (hereinafter, also simply referred to as in-plane film thickness distribution) is adjusted.

  Here, as an example, an example in which a bare wafer having a small surface area with no uneven structure formed on the surface thereof is used as the wafer 200 and the in-plane film thickness distribution of the Si film is adjusted by the above-described film forming sequence and flow rate control will be described. To do. In the present specification, the in-plane film thickness distribution of the film that is thickest in the central portion of the wafer 200 and gradually becomes thinner toward the outer peripheral portion (peripheral portion) is also referred to as a central convex distribution. Further, the in-plane film thickness distribution of the film that is the thinnest in the central portion of the wafer 200 and gradually increases toward the outer peripheral portion is also referred to as central concave distribution. Further, the film thickness distribution of a flat film having a small film thickness change from the central portion to the outer peripheral portion of the wafer 200 is also referred to as a flat distribution. If a film with a central convex distribution can be formed on a bare wafer, it is possible to form a film with a flat distribution on a patterned wafer (product wafer) with a large surface area in which a fine uneven structure is formed. Becomes

  In this specification, the film formation sequence shown in FIG. 4 may be referred to as follows for convenience. The same notation is used in the description of the modified examples and the like below.

(DCS → DS) × n → MS + PH ⇒ P-doped Si

  When the term "wafer" is used in this specification, it may mean the wafer itself or a laminate of the wafer and a predetermined layer or film formed on the surface of the wafer. When the term "wafer surface" is used herein, it may mean the surface of the wafer itself or the surface of a predetermined layer or the like formed on the wafer. In this specification, the description of “forming a predetermined layer on a wafer” means directly forming a predetermined layer on the surface of the wafer itself, a layer formed on the wafer, etc. It may mean that a predetermined layer is formed on. In this specification, the term “substrate” is also synonymous with the term “wafer”.

(Wafer charge and boat load)
When a plurality of wafers 200 are loaded into the boat 217 (wafer charge), the shutter opening / closing mechanism 115s moves the shutter 219s to open the lower end opening of the manifold 209 (shutter open). Thereafter, as shown in FIG. 1, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and loaded into the processing chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

(Pressure adjustment and temperature adjustment)
The inside of the processing chamber 201, that is, the space in which the wafer 200 exists is evacuated by the vacuum pump 246 (decompressed exhaust) so as to have a desired pressure (degree of vacuum). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information. Further, the wafer 200 in the processing chamber 201 is heated by the heater 207 so as to have a desired film forming temperature. At this time, the power supply to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution. Further, the rotation of the wafer 200 by the rotation mechanism 267 is started. The exhaust of the processing chamber 201, the heating of the wafer 200, and the rotation are all continuously performed at least until the processing of the wafer 200 is completed.

(Seed layer formation step)
Then, the following steps 1 and 2 are sequentially executed.

[Step 1]
In this step, DCS gas is supplied from the nozzle 249b to the wafer 200 in the processing chamber 201, and N ₂ gas is supplied from the nozzles 249a and 249c.

Specifically, the valve 243b is opened and the DCS gas is flown into the gas supply pipe 232b. The flow rate of the DCS gas is adjusted by the MFC 241b, is supplied into the processing chamber 201 via the nozzle 249b, and is exhausted from the exhaust port 231a. At this time, the DCS gas is supplied to the wafer 200. At this time, the valves 243d and 243f are opened, and N ₂ gas is supplied into the processing chamber 201 through the nozzles 249a and 249c, respectively.

  By supplying the DCS gas to the wafer 200 under the processing condition described later, a natural oxide film, impurities and the like can be removed from the surface of the wafer 200 by the treatment effect (etching effect) of the DCS gas. It is possible to clean the surface. This makes it possible to make the surface of the wafer 200 a surface on which Si adsorption, that is, the formation of the seed layer, easily proceeds in step 2 described later.

After the surface of the wafer 200 is cleaned, the valve 243b is closed and the supply of DCS gas into the processing chamber 201 is stopped. Then, the inside of the processing chamber 201 is evacuated to remove gas and the like remaining in the processing chamber 201 from the inside of the processing chamber 201. At this time, the valves 243d to 243f are opened and N ₂ gas is supplied into the processing chamber 201 via the nozzles 249a to 249c. The N ₂ gas supplied from the nozzles 249a to 249c acts as a purge gas, whereby the inside of the processing chamber 201 is purged (purge step).

[Step 2]
After step 1, the DS gas is supplied from the nozzle 249a and the N ₂ gas is supplied from the nozzles 249b and 249c to the surface of the wafer 200 in the processing chamber 201, that is, the cleaned wafer 200. To do.

Specifically, the valve 243a is opened and the DS gas is caused to flow into the gas supply pipe 232a. The flow rate of the DS gas is adjusted by the MFC 241a, is supplied into the processing chamber 201 through the nozzle 249a, and is exhausted from the exhaust port 231a. At this time, the DS gas is supplied to the wafer 200. At this time, the valves 243e and 243f are opened, and N ₂ gas is supplied into the processing chamber 201 through the nozzles 249b and 249c, respectively.

  By supplying the DS gas to the wafer 200 under the processing conditions described later, Si contained in the DS can be adsorbed on the surface of the wafer 200 cleaned in step 1 to form a seed (nucleus). It will be possible. Under the processing conditions described below, the crystal structure of the nuclei formed on the surface of the wafer 200 is amorphous.

  After the nuclei are formed on the surface of the wafer 200, the valve 243a is closed and the supply of the DS gas into the processing chamber 201 is stopped. Then, the gas and the like remaining in the processing chamber 201 are removed from the processing chamber 201 by the same processing procedure as the purging step of step 1.

[Performed a predetermined number of times]
By performing the above-described steps 1 and 2 alternately, that is, performing a non-simultaneously non-synchronized cycle a predetermined number of times (n times, n is an integer of 1 or more), the above-mentioned nuclei are densely formed on the wafer 200. A formed seed layer, that is, a Si seed layer can be formed.

The processing conditions in step 1 are:
DCS gas supply flow rate: 10 to 1000 sccm
DCS gas supply time: 0.5 to 10 minutes N ₂ gas supply flow rate (for each gas supply pipe): 10 to 10000 sccm
Processing temperature (first temperature): 350 to 450 ° C
Processing pressure: 400-1000Pa
Is exemplified.

The processing conditions in step 2 are:
DS gas supply flow rate: 10 to 1000 sccm
The DS gas supply time: 0.5 to 10 minutes is exemplified. The other processing conditions are the same as the processing conditions in step 1.

In Step 1, as the third processing gas, in addition to DCS gas, monochlorosilane (SiH ₃ Cl, abbreviation: MCS) gas, tetrachlorosilane (SiCl ₄ , abbreviation: STC) gas, trichlorosilane (SiHCl ₃ , abbreviation: TCS). A chlorosilane-based gas such as gas, hexachlorodisilane (Si ₂ Cl ₆ , abbreviated: HCDS) gas, octachlorotrisilane (Si ₃ Cl ₈ , abbreviated: OCTS) gas, or the like can be used. Moreover, as the third processing gas, tetrafluorosilane (SiF ₄ ) gas, tetrabromosilane (SiBr ₄ ) gas, tetraiodosilane (SiI ₄ ) gas, or the like can be used. That is, as the third processing gas, a halosilane-based gas such as a fluorosilane-based gas, a bromosilane-based gas, or an iodosilane-based gas can be used in addition to the chlorosilane-based gas. Further, as the third processing gas, a halogen gas not containing Si such as hydrogen chloride (HCl) gas, chlorine (Cl ₂ ) gas, trichloroborane (BCl ₃ ) gas, chlorine fluoride (ClF ₃ ) gas is used. You can

In Step 2, as the second processing gas, in addition to DS gas, MS gas, trisilane (Si ₃ H ₈ ) gas, tetrasilane (Si ₄ H ₁₀ ) gas, pentasilane (Si ₅ H ₁₂ ) gas, hexasilane (Si ₆ H) ₁₄ ) Silicon hydride gas such as gas can be used.

As the inert gas, a rare gas such as Ar gas, He gas, Ne gas, or Xe gas can be used in addition to N ₂ gas. This point is the same in the temperature raising step and the Si film forming step, which will be described later.

(Raising temperature step)
After the seed layer forming step is completed, the output of the heater 207 is adjusted so that the temperature inside the processing chamber 201 is changed to the second temperature higher than the above-mentioned first temperature. When this step is performed, the valves 243d to 243f are opened, N ₂ gas is supplied into the processing chamber 201 through the nozzles 249a to 249c, and the inside of the processing chamber 201 is purged. After the temperature in the processing chamber 201 reaches the second temperature and stabilizes, the Si film forming step described later is started.

(Si film forming step)
In this step, MS gas and PH gas are supplied from the nozzle 249c to the wafer 200 in the processing chamber 201, that is, the surface of the seed layer formed on the wafer 200, and N ₂ is supplied from each of the nozzles 249a and 249b. Supply gas.

Specifically, the valve 243c is opened and the MS gas is flown into the gas supply pipe 232c. The flow rate of the MS gas is adjusted by the MFC 241c, is supplied into the processing chamber 201 via the nozzle 249c, and is exhausted from the exhaust port 231a. At this time, the valve 243g is opened and the PH gas is flown into the gas supply pipe 232g. The flow rate of the PH gas is adjusted by the MFC 241g, is supplied into the processing chamber 201 via the gas supply pipe 232c and the nozzle 249c, and is exhausted from the exhaust port 231a. At this time, MS gas and PH gas are simultaneously and simultaneously supplied to the wafer 200. At this time, the valves 243d and 243e are opened, and N ₂ gas is supplied into the processing chamber 201 through the nozzles 249a and 249b, respectively.

  By supplying MS gas and PH gas from the nozzle 249c to the wafer 200 under the processing conditions described later, Si is adsorbed (deposited) on the surface of the wafer 200, that is, on the seed layer formed on the wafer 200. Then, a P-doped Si film can be formed. Under the processing conditions described later, the crystal structure of the Si film formed on the wafer 200 is amorphous, poly (polycrystal), or a mixed crystal of amorphous and poly.

When supplying MS gas and PH gas (hereinafter, these gases are also referred to as MS gas etc.) to the wafer 200, the flow rate of N ₂ gas supplied from the nozzle 249a and the flow rate of N ₂ gas supplied from the nozzle 249b. Control the balance of and. Specifically, for example, the flow rate of the N ₂ gas supplied from the nozzle 249a and the flow rate of the N ₂ gas supplied from the nozzle 249b are made different. Thereby, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be adjusted.

In the film forming sequence shown in FIG. 4, as an example, the flow rate of the N ₂ gas supplied from the nozzle 249a is made higher than the flow rate of the N ₂ gas supplied from the nozzle 249b. In this case, for example, the flow rate of N ₂ gas supplied from the nozzle 249a is 500 to 2000 sccm, and the flow rate of N ₂ gas supplied from the nozzle 249b is 10 to 400 sccm. By controlling the flow rate balance in this way, it is possible to control the in-plane concentration distribution (partial pressure distribution) of the MS gas or the like supplied to the wafer 200, that is, the supply amount distribution in the in-plane. Become. Specifically, the concentration (supply amount) of MS gas or the like supplied to the central portion of the wafer 200 is increased (increased), and the concentration (supply amount) of MS gas or the like supplied to the outer peripheral portion of the wafer 200 is increased. It is possible to control the amount in the direction of decreasing (decreasing). Depending on the degree of control, the concentration (supply amount) of the MS gas or the like supplied to the central portion of the wafer 200 is approximately the same as the concentration (supply amount) of the MS gas or the like supplied to the outer peripheral portion of the wafer 200. Alternatively, the concentration (supply amount) of the MS gas or the like supplied to the outer peripheral portion of the wafer 200 can be made higher (more). As a result, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be made closer to, for example, a central concave distribution to a flat distribution, or even closer to a central convex distribution.

  After the Si film having a desired in-plane film thickness distribution is formed on the wafer 200, the valves 243c and 243g are closed and the supply of MS gas and PH gas into the processing chamber 201 is stopped. Then, the gas and the like remaining in the processing chamber 201 are removed from the processing chamber 201 by the same processing procedure as the purging step of step 1 described above.

The processing conditions in the Si film forming step are as follows.
MS gas supply flow rate: 10 to 2000 sccm
PH gas supply flow rate: 0.1 to 500 sccm
MS gas and PH gas supply time: 1 to 300 minutes N ₂ gas supply flow rate (per gas supply pipe): 10 to 20000 sccm
Processing temperature (second temperature): 500 to 650 ° C
Processing pressure: 30-200Pa
Is exemplified. The processing conditions shown here are the conditions under which the MS gas is thermally decomposed when the MS gas is present alone in the processing chamber 201, that is, the CVD reaction occurs. That is, the processing conditions shown here are conditions in which the adsorption (deposition) of Si on the wafer 200 does not have a self-limit, that is, the adsorption of Si on the wafer 200 is a non-self limit.

  As the first processing gas, in addition to MS gas, the above-mentioned various silicon hydride gases and the above-mentioned various halosilane-based gases can be used. In order to suppress the halogen element from remaining in the Si film, it is preferable to use a silicon hydride gas as the first processing gas, and in order to improve the film formation rate of the Si film, a reactive gas as the first processing gas is used. It is preferable to use a high halosilane-based gas.

As the dopant gas, a gas containing a group V element such as arsine (AsH ₃ ) gas that becomes a solid by itself (P, arsenic (As), etc.) can be used as the dopant gas. The dopant gas is a group III element such as diborane (B ₂ H ₆ ) gas or trichloroborane (BCl ₃ ) gas in addition to the gas containing the group V element, and the element (boron (boron (B It is also possible to use a gas containing B) or the like).

(Afterpurge and return to atmospheric pressure)
After the Si film forming step is completed, N ₂ gas as a purge gas is supplied into the processing chamber 201 from each of the nozzles 249a to 249c and exhausted from the exhaust port 231a. As a result, the inside of the process chamber 201 is purged, and the gas and reaction by-products remaining in the process chamber 201 are removed from the process chamber 201 (afterpurge). After that, the atmosphere in the processing chamber 201 is replaced with an inert gas (replacement with an inert gas), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).

(Boat unload and wafer discharge)
The boat elevator 115 lowers the seal cap 219 and opens the lower end of the manifold 209. Then, the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 (boat unloading) while being supported by the boat 217. After the boat is unloaded, the shutter 219s is moved, and the lower end opening of the manifold 209 is sealed by the shutter 219s via the O-ring 220c (shutter close). The processed wafer 200 is carried out of the reaction tube 203 and then taken out from the boat 217 (wafer discharge).

(3) Effects of this Embodiment According to this embodiment, one or more of the following effects can be obtained.

(A) By controlling the balance between the flow rate of the N ₂ gas supplied from the nozzle 249a and the flow rate of the N ₂ gas supplied from the nozzle 249b when the MS gas is supplied from the nozzle 249c in the Si film forming step, It is possible to adjust the in-plane film thickness distribution of the Si film formed on the wafer 200. For example, the in-plane film thickness distribution of the Si film formed on the wafer 200 configured as a bare wafer can be a central convex distribution. As a result, when a patterned wafer is used as the wafer 200, it is possible to form a Si film having a flat distribution on the wafer 200.

  The in-plane film thickness distribution of the film formed on the wafer 200 depends on the surface area of the wafer 200, which is considered to be due to the so-called loading effect. When a raw material such as MS gas flows from the outer peripheral side toward the central side of the wafer 200 as in the substrate processing apparatus of the present embodiment, the larger the surface area of the wafer 200 to be film-formed, the raw material such as MS gas. Is consumed in a large amount on the outer peripheral portion of the wafer 200, and it is difficult to reach the central portion. As a result, the in-plane film thickness distribution of the film formed on the wafer 200 tends to have a central concave distribution. According to the present embodiment, even when a patterned wafer having a large surface area is used as the wafer 200, the in-plane film thickness distribution of the film formed on the wafer 200 is corrected from the central concave distribution to the flat distribution, Further, it is possible to freely control such as correcting to a central convex distribution.

(B) In the Si film forming step, by supplying the N ₂ gas using the two nozzles 249a and 249b, the N ₂ gas is supplied on the wafer 200 more than when using the single nozzle. It is possible to adjust the in-plane film thickness distribution of the Si film to be formed in a precise and wide range. According to the method of the present embodiment, this is the concentration (supply amount) of the MS gas or the like supplied to the central portion of the wafer 200 and the concentration (supply amount) of the MS gas or the like supplied to the outer peripheral portion of the wafer 200. This is because it is possible to control and, individually, that is, independently.

(C) By disposing at least the nozzles 249b, preferably the nozzles 249a to 249c so as to face at least the exhaust ports 231a in a plan view, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be determined. It is possible to improve controllability. Further, by arranging the nozzles 249a and 249c in line symmetry with the straight line L as the axis of symmetry, the controllability of the in-plane film thickness distribution of the Si film formed on the wafer 200 can be further enhanced.

(D) By performing the seed layer forming step after preparing the wafer 200 and before performing the Si film forming step, the incubation time (growth delay) of the Si film formed on the wafer 200 can be shortened. Therefore, it becomes possible to improve the productivity of the film forming process.

(E) In the seed layer forming step, by supplying DCS gas and DS gas alternately, it is possible to enhance the formation efficiency of the seed layer and to densify the seed layer. As a result, the productivity of the film forming process can be improved and the Si film formed on the wafer 200 can be densified. Further, by alternately supplying the gas, it is possible to suppress the excessive gas phase reaction in the processing chamber 201 and improve the quality of the film forming process.

(F) The effects described above are obtained when a first processing gas other than MS gas is used, a second processing gas other than DS gas is used, a third processing gas other than DCS gas is used, and other than PH gas. The same can be obtained when the dopant gas of No. ₂ is used or when an inert gas other than N ₂ gas is used.

(4) Modified Example The film forming step in the present embodiment is not limited to the mode shown in FIG. 4, and can be modified as in the modified example shown below. These modifications can be combined arbitrarily. Unless otherwise specified, the processing procedure and processing conditions in each step of each modification can be the same as the processing procedure and processing conditions in each step of the substrate processing sequence described above.

(Modification 1)
In the film forming sequence shown in FIG. 4, an example in which the seed layer forming step is performed has been described, but the seed layer forming step may be omitted. Also in this modification, when the MS gas is supplied from the nozzle 249c in the Si film forming step, the balance between the flow rate of the N ₂ gas supplied from the nozzle 249a and the flow rate of the N ₂ gas supplied from the nozzle 249b is controlled. As a result, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be adjusted.

(Modification 2)
In the Si film forming step, when the MS gas or the like is supplied from the nozzle 249c, the flow rate of the N ₂ gas supplied from the nozzle 249a may be set lower than the flow rate of the N ₂ gas supplied from the nozzle 249b. In this case, for example, the flow rate of the N ₂ gas supplied from the nozzle 249a is set to 10 to 400 sccm, and the flow rate of the N ₂ gas supplied from the nozzle 249b is set to 500 to 2000 sccm. By controlling the flow rate balance in this manner, the concentration (supply amount) of MS gas or the like supplied to the central portion of the wafer 200 is lowered (reduced), and the MS supplied to the outer peripheral portion of the wafer 200 is controlled. It is possible to control the concentration (supply amount) of gas or the like in a direction of increasing (increasing). As a result, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be made closer to, for example, a central convex distribution to a flat distribution, or even closer to a central concave distribution.

When the in-plane film thickness distribution of the Si film formed on the wafer 200 has a desired distribution, when the MS gas or the like is supplied from the nozzle 249c, the flow rate of the N ₂ gas supplied from the nozzle 249a, The flow rate of the N ₂ gas supplied from the nozzle 249b may be made equal without making it different.

(Modification 3)
Not only Si film formation step, in step 2 of the seed layer forming step, when supplying the DS gas from the nozzle 249a, and the flow rate of _{N 2} gas supplied from the nozzle 249 b, the flow rate of _{N 2} gas supplied from the nozzle 249c Alternatively, the balance between and may be controlled. For example, to adjust the flow rate of N ₂ gas supplied from the nozzle 249 b, by varying the, and the flow rate of N ₂ gas supplied from the nozzle 249 c, plane thickness distribution of the seed layer formed on the wafer 200 As a result, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be adjusted.

For example, when supplying the DS gas from the nozzle 249a, the flow rate of _{N 2} gas supplied from the nozzle 249 b, may be smaller than the flow rate of _{N 2} gas supplied from the nozzle 249 c. In this case, for example, the flow rate of _{N 2} gas supplied from the nozzle 249b and 10～400Sccm, the flow rate of _{N 2} gas supplied from the nozzle 249c to 500～2000Sccm. By controlling the flow rate balance in this way, the in-plane thickness distribution of the seed layer formed on the wafer 200 can be made closer to a flat distribution from the central concave distribution, or even closer to the central convex distribution. It will be possible.

Further, for example, when supplying the DS gas from the nozzle 249a, the flow rate of _{N 2} gas supplied from the nozzle 249 b, it may be greater than the flow rate of _{N 2} gas supplied from the nozzle 249 c. In this case, for example, the flow rate of _{N 2} gas supplied from the nozzle 249b and 500～2000Sccm, the flow rate of _{N 2} gas supplied from the nozzle 249c to 10～400Sccm. By controlling the flow rate balance in this way, the in-plane thickness distribution of the seed layer formed on the wafer 200 is made closer to, for example, a central convex distribution to a flat distribution, or further to a central concave distribution. It becomes possible.

(Modification 4)
In step 2 of the seed layer forming step, the _{N 2} gas supplied from the nozzle 249a to the wafer 200, the _{N 2} gas supplied from the nozzle 249b to the wafer 200, the DS gas from the nozzle 249c to the wafer 200 It may be supplied. That is, in the Si film forming step and the seed layer forming step 2, the processing gas (DS gas, MS gas) may be supplied from the common nozzle 249c.

In this case, in step 2, when the DS gas is supplied from the nozzle 249c, the balance between the flow rate of the N ₂ gas supplied from the nozzle 249a and the flow rate of the N ₂ gas supplied from the nozzle 249b is controlled to control the wafer. The in-plane thickness distribution of the seed layer formed on 200 may be adjusted. In this case, the supply conditions of the N ₂ gas supplied from the nozzles 249a and 249b can be the same as those in the Si film forming step.

For example, when supplying the DS gas from the nozzle 249 c, the flow rate of _{N 2} gas supplied from the nozzle 249a, is made larger than the flow rate of _{N 2} gas supplied from the nozzle 249 b, a seed layer formed on the wafer 200 It is possible to make the in-plane thickness distribution of (1) closer to the central concave distribution to the flat distribution, and further to the central convex distribution. As a result, it becomes possible to adjust the in-plane film thickness distribution of the Si film formed on the wafer 200.

Further, for example, when the DS gas is supplied from the nozzle 249c, the flow rate of the N ₂ gas supplied from the nozzle 249a is made smaller than the flow rate of the N ₂ gas supplied from the nozzle 249b, so that the seed formed on the wafer 200 is formed. It is possible to make the in-plane thickness distribution of a layer closer to a central convex distribution to a flat distribution, or even closer to a central concave distribution. As a result, it becomes possible to adjust the in-plane film thickness distribution of the Si film formed on the wafer 200.

(Modification 5)
In step 1 of the seed layer forming step, the DCS gas may be supplied to the wafer 200 from any of the nozzles 249a and 249c.

In addition, in step 1, when the DCS gas is supplied from the nozzle 249c, the balance between the flow rate of the N ₂ gas supplied from the nozzle 249a and the flow rate of the N ₂ gas supplied from the nozzle 249b may be controlled. Good. For example, the flow rate of _{N 2} gas supplied from the nozzle 249a, by varying the, and the flow rate of _{N 2} gas supplied from the nozzle 249 b, the degree of cleaning to be performed on the surface of the wafer 200, the surface of the wafer 200 It is possible to make them different within. Thereby, the in-plane thickness distribution of the seed layer formed on the wafer 200 can be adjusted, and as a result, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be adjusted. Become.

For example, when performing the supply of the DCS gas from the nozzle 249 c, the flow rate of _{N 2} gas supplied from the nozzle 249a, is made larger than the flow rate of _{N 2} gas supplied from the nozzle 249 b, cleaning in the central portion of the wafer 200 Can be controlled so as to increase the effect of the above, and to decrease the effect of cleaning the outer peripheral portion of the wafer 200. As a result, the in-plane thickness distribution of the seed layer formed on the wafer 200, that is, the in-plane film thickness distribution of the Si film formed on the wafer 200 is made closer to a flat distribution from the central concave distribution, , It is possible to approach the central convex distribution.

Further, for example, when the DCS gas is supplied from the nozzle 249c, the flow rate of the N ₂ gas supplied from the nozzle 249a is made smaller than the flow rate of the N ₂ gas supplied from the nozzle 249b, so that the central portion of the wafer 200 is cleaned. It is possible to control so as to reduce the effect of cleaning and to increase the effect of cleaning the outer peripheral portion of the wafer 200. As a result, the in-plane thickness distribution of the seed layer formed on the wafer 200, that is, the in-plane film thickness distribution of the Si film formed on the wafer 200 is made closer to the flat distribution from the central convex distribution, , It becomes possible to approach the central concave distribution.

The supply of the DCS gas when performing the nozzle 249a in step 1, and the flow rate of _{N 2} gas supplied from the nozzle 249 b, by controlling the flow rate of _{N 2} gas supplied from the nozzle 249 c, the balance, the same effect can get.

(Modification 6)
In Modifications 3 to 5, the flow rate balance control of the N ₂ gas in the Si film forming step may be omitted. Even in this case, by adjusting the in-plane thickness distribution of the seed layer formed on the wafer 200, the in-plane film thickness distribution of the Si film formed on the wafer 200 can be adjusted to some extent. ..

(Modification 7)
In the seed layer forming step, step 1 may be omitted and step 2 may be performed a predetermined number of times (one or more times), as in the film forming sequence described below. In step 2, as the second processing gas, in addition to silicon hydride gas, tetrakisdimethylaminosilane (Si [N (CH ₃ ) ₂ ] ₄ , abbreviation: 4DMAS) gas, trisdimethylaminosilane (Si [N (CH ₃ ) ₂ ] ₃ H, abbreviated: 3DMAS) gas, bisdiethylaminosilane (Si [N (C ₂ H ₅ ) ₂ ] ₂ H ₂ , abbreviated: BDEAS) gas, bister butylaminosilane (SiH ₂ [NH (C ₄ H ₉ )] ₂ , abbreviated name: BTBAS) gas, diisopropylaminosilane (SiH ₃ N [CH (CH ₃ ) ₂ ] ₂ , abbreviated name: DIPAS) gas, or other aminosilane-based gas may be used.

  DIPAS → MS + PH ⇒ P-doped Si

(Modification 8)
As in the film forming sequence described below, in the seed layer forming step, steps 1 and 2 may be performed once each. Further, in Step 1, as the third processing gas, a halogen-based gas containing no Si such as HCl gas may be used in addition to the halosilane-based gas.

  HCl → DS → MS + PH ⇒ P-doped Si

(Modification 9)
As the first processing gas, in addition to silicon hydride gas, for example, chlorosilane-based gas such as DCS gas or HCDS gas, or aminosilane-based gas such as 3DMAS gas or BDEAS gas may be used.

In addition to the above-described processing gas, as a reactant, for example, an amine-based gas such as triethylamine ((C ₂ H ₅ ) ₃ N, abbreviation: TEA) gas, oxygen (O ₂ ) gas, steam (H ₂ O gas), ozone (O ₃ ) gas, plasma-excited O ₂ gas (O ₂ ^* ), oxygen (O) -containing gas (oxidant) such as O ₂ gas + hydrogen (H ₂ ) gas, and propylene A carbon (C) -containing gas such as (C ₃ H ₆ ) gas or a B-containing gas such as BCl ₃ gas may be further used.

Then, for example, a silicon nitride film (Si film), a silicon oxynitride film (SiON film), a silicon oxycarbide film (SiOC film), a silicon carbonitride film (SiCN film) is formed on the wafer 200 by the following film formation sequence. Alternatively, a silicon oxycarbonitride film (SiOCN film), a silicon borocarbonitride film (SiBCN film), a silicon boronitride film (SiBN film), or a silicon oxide film (SiO film) may be formed. In the film formation sequence below, when supplying the first processing gas (DCS gas, HCDS gas, 3DMAS gas, BDEAS gas) from the nozzle 249c, the flow rate balance of the N ₂ gas supplied from the nozzles 249a and 249b is shown in FIG. The control is performed in the same manner as the film forming sequence shown and the above-described modification. As a result, the same effects as those of the film forming sequence shown in FIG.

DCS + NH ₃ ⇒ SiN
(DCS → NH ₃ ) × n ⇒ SiN
(HCDS → NH ₃ → O ₂ ) × n ⇒ SiON
(HCDS → TEA → O ₂ ) × n ⇒ SiOC (N)
(HCDS → C ₃ H ₆ → NH ₃ ) × n ⇒ SiCN
(HCDS → C ₃ H ₆ → NH ₃ → O ₂ ) × n ⇒ SiOCN
(HCDS → C ₃ H ₆ → BCl ₃ → NH ₃ ) × n ⇒ SiBCN
(HCDS → BCl ₃ → NH ₃ ) × n ⇒ SiBN
(HCDS → O ₂ + H ₂ ) × n ⇒ SiO
(3DMAS → O ₃ ) × n ⇒ SiO
(BDEAS → O ₂ ^* ) × n ⇒ SiO

The processing conditions in the step of supplying the first processing gas in this modification are:
First processing gas supply flow rate: 10 to 2000 sccm
First processing gas supply time: 1 to 120 seconds Processing temperature: 250 to 800 ° C
Processing pressure: 1 to 2666 Pa
Is exemplified. The other processing conditions are the same as the processing conditions in the Si film forming step of the film forming sequence shown in FIG.

Further, as the processing conditions in the step of supplying the reactant,
Reactant supply flow rate: 100 to 10,000 sccm
Reactant supply time: 1 to 120 seconds Processing pressure: 1 to 4000 Pa
Is exemplified. The other processing conditions are the same as the processing conditions in the step of supplying the first processing gas of this modification.

  Also in this modification, the seed layer forming step may be performed on the wafer 200 after the wafer 200 is prepared and before the above-described film forming sequence is performed.

<Other Embodiments>
The embodiments of the present invention have been specifically described above. However, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  In the above-described embodiment, the example in which the nozzles 249a to 249c are provided adjacent (adjacent) has been described, but the present invention is not limited to such an aspect. For example, the nozzles 249a and 249c may be provided at positions apart from the nozzle 249b in the annular space in a plan view between the inner wall of the reaction tube 203 and the wafer 200.

In the above-described embodiment, an example in which the first to third supply units are configured by the nozzles 249a to 249c and three nozzles are provided in the processing chamber 201 has been described, but the present invention is not limited to such an aspect. .. For example, at least one of the first to third supply units may be composed of two or more nozzles. Further, a nozzle other than the first to third supply units may be newly provided in the processing chamber 201, and N ₂ gas or various processing gases may be further supplied using this nozzle. When the nozzles other than the nozzles 249a to 249c are provided in the processing chamber 201, the newly provided nozzle may be provided at a position facing the exhaust port 231a in a plan view, or at a position not facing the exhaust port 231a. That is, the newly provided nozzle is located at a position distant from the nozzles 249 a to 249 c, for example, along the outer periphery of the wafer 200 in the annular space in a plan view between the inner wall of the reaction tube 203 and the wafer 200. It may be provided at an intermediate position between the nozzles 249a to 249c and the exhaust port 231a or at a position near the intermediate position.

  In the above-described embodiment, an example of forming a film containing Si as a main element on the substrate has been described, but the present invention is not limited to such an aspect. That is, the present invention can be suitably applied to the case where a film containing a metalloid element such as germanium (Ge) or B as a main element in addition to Si is formed on the substrate. In addition, the present invention provides titanium (Ti), zirconium (Zr), hafnium (Hf), niobium (Nb), tantalum (Ta), molybdenum (Mo), tungsten (W), yttrium (Y), lanthanum (La). It can also be suitably applied to the case where a film containing a metal element such as strontium (Sr) or aluminum (Al) as a main element is formed on a substrate.

  It is preferable that the recipe used for the substrate processing is individually prepared according to the processing content and stored in the storage device 121c via the telecommunication line or the external storage device 123. Then, when starting the processing, it is preferable that the CPU 121a appropriately selects an appropriate recipe from a plurality of recipes stored in the storage device 121c according to the content of the substrate processing. As a result, it becomes possible to form films of various film types, composition ratios, film qualities, and film thicknesses with good reproducibility with one substrate processing apparatus. Further, the burden on the operator can be reduced, and the processing can be started quickly while avoiding an operation error.

  The above-mentioned recipe is not limited to a case of newly creating the recipe, but may be prepared by changing an existing recipe already installed in the substrate processing apparatus, for example. When changing the recipe, the changed recipe may be installed in the substrate processing apparatus via an electric communication line or a recording medium recording the recipe. Further, the input / output device 122 included in the existing substrate processing apparatus may be operated to directly change the existing recipe already installed in the substrate processing apparatus.

  In the above-described embodiment, the example in which the first to third supply units are provided in the processing chamber along the inner wall of the reaction tube has been described. However, the invention is not limited to the embodiments described above. For example, as shown in the sectional structure of the vertical processing furnace in FIG. 5A, a buffer chamber is provided on the side wall of the reaction tube, and the first to third supply units having the same configuration as the above-described embodiment are provided in the buffer chamber. May be provided in the same arrangement as the above-described embodiment. FIG. 5A shows an example in which a supply buffer chamber and an exhaust buffer chamber are provided on the side wall of the reaction tube, and they are arranged at positions facing each other with the wafer interposed therebetween. Each of the supply buffer chamber and the exhaust buffer chamber is provided from the lower part of the side wall of the reaction tube to the upper part thereof, that is, along the wafer array region. Further, FIG. 5A shows an example in which the supply buffer chamber is partitioned into a plurality of (three) spaces and each nozzle is arranged in each space. The arrangement of the three spaces in the buffer chamber is the same as the arrangement of the first to third supply units. Further, for example, as shown in the sectional structure of the vertical processing furnace in FIG. 5B, a buffer chamber is provided in the same arrangement as in FIG. 5A, a second supply unit is provided in the buffer chamber, and You may make it provide the 1st, 3rd supply part so that the communication part with a process chamber may be pinched | interposed from both sides and along an inner wall of a reaction tube. The configuration other than the buffer chamber and the reaction tube described in FIGS. 5A and 5B is the same as the configuration of each part of the processing furnace shown in FIG. Even when these processing furnaces are used, the same effect as that of the above-described embodiment can be obtained.

  In the above-described embodiment, an example in which a film is formed using a batch-type substrate processing apparatus that processes a plurality of substrates at once has been described. The present invention is not limited to the above-described embodiments, and can be suitably applied to, for example, the case where a film is formed using a single-wafer type substrate processing apparatus that processes one or several substrates at a time. Further, in the above-described embodiment, an example of forming a film by using the substrate processing apparatus having the hot wall type processing furnace has been described. The present invention is not limited to the above-described embodiment, and can be suitably applied to the case where a film is formed using a substrate processing apparatus having a cold wall type processing furnace.

  Even when these substrate processing apparatuses are used, film formation can be performed under the same sequence and processing conditions as those of the above-described embodiment and modification, and the same effects as these can be obtained.

  Further, the above-described embodiments and modified examples can be appropriately combined and used. The processing procedure and processing condition at this time can be the same as the processing procedure and processing condition of the above-described embodiment, for example.

  The various effects described in the present specification are not limited to the conditions for forming the film on the substrate not only under the condition that the processing gas supplied to the substrate is thermally decomposed (under the condition that self-limit is not applied) but also for the substrate. The same tendency can be obtained even under the condition that the supplied processing gas is not thermally decomposed (a condition in which self-limitation is applied). However, among the above-mentioned various effects, particularly, the effect related to the adjustment of the in-plane film thickness distribution is that the film formation on the substrate is performed under the condition that the processing gas supplied to the substrate is thermally decomposed to cause the CVD reaction. It is particularly effective when performed.

As Sample A, a Si film was formed on a wafer by using the substrate processing apparatus shown in FIG. 1 and by the film forming sequence shown in FIG. When performing the Si film forming step, the flow rate of the N ₂ gas supplied from the first supply unit is set to a predetermined flow rate within the range of 150 to 250 sccm, and the flow rate of the N ₂ gas supplied from the second supply unit is 40 to 80 sccm. The predetermined flow rate was within the range. The other processing conditions were predetermined conditions within the processing condition range described in the above embodiment.

As the sample B, the substrate processing apparatus shown in FIG. 1 was used and a Si film was formed on the wafer by the film forming sequence shown in FIG. When performing the Si film forming step, the flow rate of the N ₂ gas supplied from the first supply unit is set to a predetermined flow rate within the range of 450 to 550 sccm, and the flow rate of the N ₂ gas supplied from the second supply unit is 40 to 80 sccm. The predetermined flow rate was within the range. The other processing conditions were the same as the processing conditions when the sample A was manufactured.

As Sample C, a substrate processing apparatus shown in FIG. 1 was used, and a Si film was formed on the wafer by the film forming sequence shown in FIG. However, when the Si film forming step was performed, the flow rate balance of the N ₂ gas supplied from the first and second supply parts was set to be opposite to that when the sample A was manufactured. Specifically, when performing the Si film forming step, the flow rate of the N ₂ gas supplied from the first supply unit is set to a predetermined flow rate within the range of 250 to 350 sccm, and the N ₂ gas supplied from the second supply unit is changed. The flow rate was set to a predetermined flow rate within the range of 700 to 900 sccm. The other processing conditions were the same as the processing conditions when the sample A was manufactured.

  Then, the film thicknesses of the Si films of Samples A to C on the outer peripheral portion of the wafer were measured and compared. 6A is a diagram comparing the measurement results of samples A and B, and FIG. 6B is a diagram comparing the measurement results of samples A and C. The measurement positions (distances from the center of the wafer) of the samples A and B in FIG. 6A correspond to each other, and the measurement positions (distances from the center of the wafer) of the samples A and C in FIG. 6B. Also correspond to each other. However, the measurement positions of the samples A and B in FIG. 6A and the measurement positions of the samples A and C in FIG. 6B are different positions on the outer peripheral portion of the wafer. The vertical axes in FIGS. 6A and 6B represent the film thickness (Å), respectively. The horizontal axis of FIG. 6A shows the samples A and B, and the horizontal axis of FIG. 6B shows the samples A and C, respectively.

From FIG. 6A, it can be seen that the film thickness of the Si film of sample B at the wafer outer peripheral portion is smaller than the film thickness of the Si film of sample A at the wafer outer peripheral portion. That is, when the Si film forming step is performed, the flow rate of the N ₂ gas supplied from the first supply unit is increased, that is, the flow rate of the N ₂ gas supplied from the first supply unit is supplied from the second supply unit. It is understood that by increasing the ratio of the N ₂ gas to the flow rate of the N ₂ gas, the thickness of the Si film formed on the outer peripheral portion of the wafer can be adjusted to be smaller.

Further, according to FIG. 6B, it is understood that the film thickness of the Si film of sample A at the wafer outer peripheral portion is larger than the film thickness of the Si film of sample B at the wafer outer peripheral portion. That is, by performing the Si film forming step, the flow rate balance is reversed so that the flow rate of the N ₂ gas supplied from the second supply unit is made larger than the flow rate of the N ₂ gas supplied from the first supply unit. It is understood that it becomes possible to adjust the thickness of the Si film formed on the outer peripheral portion of the wafer in the direction of increasing the thickness.

From these results, when performing the Si film forming step, by controlling the balance between the flow rate of the N ₂ gas supplied from the first supply section and the flow rate of the N ₂ gas supplied from the second supply section, It can be seen that the in-plane film thickness distribution of the Si film formed on the wafer can be adjusted in a wide range and precisely.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to one aspect of the invention,
A step of preparing a substrate,
An inert gas is supplied from the first supply unit to the substrate, an inert gas is supplied from the second supply unit to the substrate, and the second supply unit is supplied to the substrate (in plan view). Forming a film on the substrate by supplying a first processing gas from a third supply unit provided on the opposite side of the first supply unit with a straight line passing through the center of the substrate interposed therebetween;
In the step of forming the film, by controlling the balance between the flow rate of the inert gas supplied from the first supply unit and the flow rate of the inert gas supplied from the second supply unit, There is provided a method for manufacturing a semiconductor device or a method for processing a substrate, which adjusts a film thickness distribution in a substrate surface of the film formed on the substrate.

(Appendix 2)
The method according to Appendix 1, preferably,
The flow rate of the inert gas supplied from the first supply unit is different from the flow rate of the inert gas supplied from the second supply unit.

(Appendix 3)
The method according to appendix 1 or 2,
The flow rate of the inert gas supplied from the first supply unit is made higher than the flow rate of the inert gas supplied from the second supply unit.

(Appendix 4)
The method according to appendix 1 or 2,
The flow rate of the inert gas supplied from the first supply unit is made smaller than the flow rate of the inert gas supplied from the second supply unit.

(Appendix 5)
The method according to any one of appendices 1 to 4, preferably,
After the step of preparing the substrate and before the step of forming the film,
A second processing gas is supplied to the substrate from the first supply unit, an inert gas is supplied to the substrate from the second supply unit, and an inert gas is supplied to the substrate from the third supply unit. Further comprising the step of supplying a gas to form a seed layer on the substrate,
In the step of forming the seed layer, by controlling the balance between the flow rate of the inert gas supplied from the second supply section and the flow rate of the inert gas supplied from the third supply section, The in-plane thickness distribution of the seed layer formed on the substrate is adjusted. In this case, the film is formed on the seed layer formed on the substrate.

(Appendix 6)
The method according to appendix 5, preferably
The flow rate of the inert gas supplied from the second supply unit is different from the flow rate of the inert gas supplied from the third supply unit.

(Appendix 7)
The method according to Appendix 5 or 6, preferably,
The flow rate of the inert gas supplied from the second supply unit is made smaller than the flow rate of the inert gas supplied from the third supply unit.

(Appendix 8)
The method according to Appendix 5 or 6, preferably,
The flow rate of the inert gas supplied from the second supply unit is made higher than the flow rate of the inert gas supplied from the third supply unit.

(Appendix 9)
The method according to any one of appendices 5 to 8, preferably
In the step of forming the seed layer,
Supplying a third processing gas to the substrate from any one of the first supply unit, the second supply unit, and the third supply unit;
The second processing gas is supplied to the substrate from the first supply unit, the inert gas is supplied to the substrate from the second supply unit, and the inert gas is supplied to the substrate from the third supply unit. A step of supplying an active gas,
The cycle of alternately performing is performed a predetermined number of times.

  In the step of supplying the third processing gas, an inert gas is supplied to the substrate from the first supply unit, and the third processing gas is supplied to the substrate from the second supply unit. It is preferable to supply an inert gas to the substrate from the third supply unit.

(Appendix 10)
The method according to any one of appendices 1 to 4, preferably,
After the step of preparing the substrate and before the step of forming the film,
An inert gas is supplied to the substrate from the first supply unit, an inert gas is supplied to the substrate from the second supply unit, and a second treatment is performed on the substrate from the third supply unit. Further comprising the step of supplying a gas to form a seed layer on the substrate,
In the step of forming the seed layer, by controlling the balance between the flow rate of the inert gas supplied from the first supply unit and the flow rate of the inert gas supplied from the second supply unit, The in-plane thickness distribution of the seed layer formed on the substrate is adjusted. In this case, the film is formed on the seed layer formed on the substrate.

(Appendix 11)
The method according to appendix 10, preferably
The flow rate of the inert gas supplied from the first supply unit is different from the flow rate of the inert gas supplied from the second supply unit.

(Appendix 12)
The method according to Appendix 10 or 11, preferably,
The flow rate of the inert gas supplied from the first supply unit is made higher than the flow rate of the inert gas supplied from the second supply unit.

(Appendix 13)
The method according to Appendix 10 or 11, preferably,
The flow rate of the inert gas supplied from the first supply unit is made smaller than the flow rate of the inert gas supplied from the second supply unit.

(Appendix 14)
The method according to any one of appendices 10 to 13, preferably:
In the step of forming the seed layer,
Supplying a third processing gas to the substrate from any one of the first supply unit, the second supply unit, and the third supply unit;
An inert gas is supplied from the first supply unit to the substrate, an inert gas is supplied from the second supply unit to the substrate, and the second gas is supplied from the third supply unit to the substrate. Supplying a processing gas,
The cycle of alternately performing is performed a predetermined number of times.

  In the step of supplying the third processing gas, an inert gas is supplied to the substrate from the first supply unit, and the third processing gas is supplied to the substrate from the second supply unit. It is preferable to supply an inert gas to the substrate from the third supply unit.

(Appendix 15)
The method according to any one of appendices 1 to 14, preferably,
The second supply part (in a plan view) is arranged so as to oppose an exhaust port for exhausting each of the gases (with the center of the substrate sandwiched therebetween), and the first supply part and the third supply part. Are arranged so as to sandwich a straight line passing through the second supply part and (the center of) the exhaust port. Preferably, the first supply unit and the third supply unit are arranged line-symmetrically with respect to a straight line passing through the second supply unit and (the center of) the exhaust port.

(Appendix 16)
The method according to any one of appendices 1 to 15, preferably
The step of forming the film is performed under the condition that the first processing gas is thermally decomposed. That is, the step of forming the film is performed under the condition that the CVD reaction occurs, that is, the condition that the self-limit is not applied, that is, the condition that the non-self-limit is performed.

(Appendix 17)
According to another aspect of the invention,
A processing chamber in which the substrate is processed,
A first supply system for supplying an inert gas from a first supply unit to the substrate in the processing chamber;
A second supply system for supplying an inert gas from a second supply unit to the substrate in the processing chamber;
A third supply for supplying a processing gas to the substrate in the processing chamber from a third supply unit provided on the opposite side of the first supply unit with a straight line passing through the second supply unit and the center of the substrate interposed therebetween. System,
With the substrate prepared in the processing chamber, an inert gas is supplied to the substrate from the first supply unit, and an inert gas is supplied to the substrate from the second supply unit, In the process of forming the film on the substrate by supplying the processing gas from the third supply unit to the substrate, the inert gas supplied from the first supply unit. By controlling the balance between the flow rate of the gas and the flow rate of the inert gas supplied from the second supply unit, the film thickness distribution in the substrate surface of the film formed on the substrate is adjusted. A controller configured to control the first supply system, the second supply system, and the third supply system;
A substrate processing apparatus having the following is provided.

(Appendix 18)
According to yet another aspect of the invention,
A procedure for preparing a substrate in the processing chamber of the substrate processing apparatus,
In the processing chamber, an inert gas is supplied from the first supply unit to the substrate, an inert gas is supplied from the second supply unit to the substrate, and the second supply unit is supplied to the substrate. A step of forming a film on the substrate by supplying a processing gas from a third supply part provided on the opposite side of the first supply part with a straight line passing through the center of the substrate interposed therebetween;
In the procedure of forming the film, by controlling the balance between the flow rate of the inert gas supplied from the first supply unit and the flow rate of the inert gas supplied from the second supply unit, A procedure for adjusting the in-plane film thickness distribution of the film to be formed,
There is provided a program for causing the substrate processing apparatus to execute the program by a computer, or a computer-readable recording medium recording the program.

200 wafers (substrates)
249a nozzle (first supply unit)
249b nozzle (second supply unit)
249c nozzle (third supply unit)

Claims (20)

A step of preparing a substrate,
An inert gas is supplied to the substrate from a first supply unit, an inert gas is supplied to the substrate from a second supply unit, and the second supply unit and the center of the substrate are supplied to the substrate. A process gas containing a main element forming a film to be formed is supplied from a third supply part provided on the opposite side of the first supply part with a straight line passing through the line to pass the main element on the substrate. Forming a film containing
Have
The step of forming the film is performed under the condition that self-limitation does not occur for adsorption of the main element contained in the processing gas onto the surface of the substrate,
In the step of forming the film, by controlling the balance between the flow rate of the inert gas supplied from the first supply section and the flow rate of the inert gas supplied from the second supply section, the film is formed on the substrate. A method for manufacturing a semiconductor device, comprising adjusting a film thickness distribution in a substrate surface of the formed film.   The method of manufacturing a semiconductor device according to claim 1, wherein the flow rate of the inert gas supplied from the first supply unit is different from the flow rate of the inert gas supplied from the second supply unit.   The method of manufacturing a semiconductor device according to claim 1, wherein the flow rate of the inert gas supplied from the first supply unit is made higher than the flow rate of the inert gas supplied from the second supply unit.   The method of manufacturing a semiconductor device according to claim 1, wherein the flow rate of the inert gas supplied from the first supply unit is set smaller than the flow rate of the inert gas supplied from the second supply unit. After the step of preparing the substrate and before the step of forming the film,
A second processing gas is supplied to the substrate from the first supply unit, an inert gas is supplied to the substrate from the second supply unit, and an inert gas is supplied to the substrate from the third supply unit. Further comprising the step of supplying a gas to form a seed layer on the substrate,
In the step of forming the seed layer, by controlling the balance between the flow rate of the inert gas supplied from the second supply section and the flow rate of the inert gas supplied from the third supply section, The method of manufacturing a semiconductor device according to claim 1, wherein the in-plane thickness distribution of the seed layer formed on the substrate is adjusted.   The method of manufacturing a semiconductor device according to claim 5, wherein the flow rate of the inert gas supplied from the second supply unit is different from the flow rate of the inert gas supplied from the third supply unit.   The method of manufacturing a semiconductor device according to claim 5, wherein the flow rate of the inert gas supplied from the second supply unit is set smaller than the flow rate of the inert gas supplied from the third supply unit.   The method of manufacturing a semiconductor device according to claim 5, wherein the flow rate of the inert gas supplied from the second supply unit is made higher than the flow rate of the inert gas supplied from the third supply unit. In the step of forming the seed layer,
Supplying a third processing gas to the substrate from any one of the first supply unit, the second supply unit, and the third supply unit;
The second processing gas is supplied to the substrate from the first supply unit, the inert gas is supplied to the substrate from the second supply unit, and the inert gas is supplied to the substrate from the third supply unit. A step of supplying an active gas,
The method of manufacturing a semiconductor device according to claim 5, wherein a cycle of alternately performing is performed a predetermined number of times.   In the step of supplying the third processing gas, an inert gas is supplied from the first supply unit to the substrate, the third processing gas is supplied from the second supply unit to the substrate, The method of manufacturing a semiconductor device according to claim 9, wherein an inert gas is supplied to the substrate from the third supply unit. After the step of preparing the substrate and before the step of forming the film,
An inert gas is supplied to the substrate from the first supply unit, an inert gas is supplied to the substrate from the second supply unit, and a second treatment is performed on the substrate from the third supply unit. Further comprising the step of supplying a gas to form a seed layer on the substrate,
In the step of forming the seed layer, by controlling the balance between the flow rate of the inert gas supplied from the first supply unit and the flow rate of the inert gas supplied from the second supply unit, The method of manufacturing a semiconductor device according to claim 1, wherein the in-plane thickness distribution of the seed layer formed on the substrate is adjusted.   The method of manufacturing a semiconductor device according to claim 11, wherein the flow rate of the inert gas supplied from the first supply unit is different from the flow rate of the inert gas supplied from the second supply unit.   The method of manufacturing a semiconductor device according to claim 11, wherein the flow rate of the inert gas supplied from the first supply unit is made higher than the flow rate of the inert gas supplied from the second supply unit.   The method of manufacturing a semiconductor device according to claim 11, wherein the flow rate of the inert gas supplied from the first supply unit is made smaller than the flow rate of the inert gas supplied from the second supply unit. In the step of forming the seed layer,
Supplying a third processing gas to the substrate from any one of the first supply unit, the second supply unit, and the third supply unit;
An inert gas is supplied from the first supply unit to the substrate, an inert gas is supplied from the second supply unit to the substrate, and the second gas is supplied from the third supply unit to the substrate. Supplying a processing gas,
The method of manufacturing a semiconductor device according to claim 11, wherein a cycle of alternately performing is performed a predetermined number of times.   In the step of supplying the third processing gas, an inert gas is supplied from the first supply unit to the substrate, the third processing gas is supplied from the second supply unit to the substrate, The method of manufacturing a semiconductor device according to claim 15, wherein an inert gas is supplied to the substrate from the third supply unit.   In a plan view, the second supply unit is arranged so as to face an exhaust port for exhausting each of the gases with the substrate interposed therebetween, and the first supply unit and the third supply unit include the second supply unit. 17. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is arranged so as to sandwich a straight line passing through a portion and the exhaust port.   18. The method of manufacturing a semiconductor device according to claim 17, wherein the first supply unit and the third supply unit are arranged line-symmetrically with a straight line passing through the second supply unit and the exhaust port as a symmetry axis. A processing chamber in which the substrate is processed,
A first supply system for supplying an inert gas from a first supply unit to the substrate in the processing chamber;
A second supply system for supplying an inert gas from a second supply unit to the substrate in the processing chamber;
A film to be formed is formed by a third supply unit provided on the opposite side of the first supply unit with a straight line passing through the second supply unit and the center of the substrate sandwiched with respect to the substrate in the processing chamber. A third supply system for supplying a processing gas containing a main element to
With the substrate prepared in the processing chamber, an inert gas is supplied to the substrate from the first supply unit, and an inert gas is supplied to the substrate from the second supply unit, The processing gas is supplied from the third supply unit to perform a process of forming a film containing the main element on the substrate, and the process of forming the film is performed on the surface of the substrate. In the process of forming a film on the substrate, which is performed under the condition that the main element contained in the gas is not self-limited, the flow rate of the inert gas supplied from the first supply unit and the second supply unit The first supply system and the second supply are adjusted so as to adjust the in-plane film thickness distribution of the film formed on the substrate by controlling the balance with the flow rate of the inert gas supplied more. To control the system and the third supply system And a control unit to be made,
A substrate processing apparatus having. A procedure for preparing a substrate in the processing chamber of the substrate processing apparatus,
In the processing chamber, an inert gas is supplied from the first supply unit to the substrate, an inert gas is supplied from the second supply unit to the substrate, and the second supply unit is supplied to the substrate. On the substrate, a processing gas containing a main element forming a film to be formed is supplied from a third supply unit provided on the opposite side of the first supply unit with a straight line passing through the center of the substrate interposed therebetween. A step of forming a film containing the main element,
In the procedure of forming the film, under the condition that adsorption of the main element contained in the processing gas onto the substrate does not cause self-limitation, and in the procedure of forming the film, the first supply unit By adjusting the balance between the flow rate of the inert gas to be supplied and the flow rate of the inert gas to be supplied from the second supply section, the film thickness distribution in the substrate surface of the film formed on the substrate is adjusted. Steps to
A program that causes the substrate processing apparatus to execute the program.

Images