JP2020070359A - Low dielectric constant polyimide - Google Patents
Low dielectric constant polyimide Download PDFInfo
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- JP2020070359A JP2020070359A JP2018205445A JP2018205445A JP2020070359A JP 2020070359 A JP2020070359 A JP 2020070359A JP 2018205445 A JP2018205445 A JP 2018205445A JP 2018205445 A JP2018205445 A JP 2018205445A JP 2020070359 A JP2020070359 A JP 2020070359A
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- dielectric constant
- bis
- low dielectric
- insulating film
- alicyclic
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- 239000004642 Polyimide Substances 0.000 title claims abstract description 44
- 229920001721 polyimide Polymers 0.000 title claims abstract description 44
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 17
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- 150000008064 anhydrides Chemical class 0.000 abstract description 2
- 238000009774 resonance method Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 11
- 150000004985 diamines Chemical class 0.000 description 10
- 229920005575 poly(amic acid) Polymers 0.000 description 9
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 7
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- -1 tetracarboxylic acid dianhydride Chemical class 0.000 description 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 3
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000006798 ring closing metathesis reaction Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 2
- FKBMTBAXDISZGN-UHFFFAOYSA-N 5-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1C(C)CCC2C(=O)OC(=O)C12 FKBMTBAXDISZGN-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MUTGBJKUEZFXGO-UHFFFAOYSA-N hexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21 MUTGBJKUEZFXGO-UHFFFAOYSA-N 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- DKDZUCBUEMQGIC-UHFFFAOYSA-N 2,3,5,6-tetrafluoro-4-(2,3,4,5-tetrafluorophenoxy)aniline Chemical compound FC1=C(F)C(N)=C(F)C(F)=C1OC1=CC(F)=C(F)C(F)=C1F DKDZUCBUEMQGIC-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- UVUCUHVQYAPMEU-UHFFFAOYSA-N 3-[2-(3-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound NC1=CC=CC(C(C=2C=C(N)C=CC=2)(C(F)(F)F)C(F)(F)F)=C1 UVUCUHVQYAPMEU-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- MFTFTIALAXXIMU-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MFTFTIALAXXIMU-UHFFFAOYSA-N 0.000 description 1
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 1
- LLFGZROEMIBSBS-UHFFFAOYSA-N 3-[4-[2-[4-[3-amino-5-(trifluoromethyl)phenoxy]phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]-5-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(C=C(N)C=3)C(F)(F)F)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 LLFGZROEMIBSBS-UHFFFAOYSA-N 0.000 description 1
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 description 1
- VBWJPSYCWGSKND-UHFFFAOYSA-N 3-oxabicyclo[3.3.1]nonane-2,4-dione Chemical compound C1CCC2C(=O)OC(=O)C1C2 VBWJPSYCWGSKND-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- FQEHXKKHEIYTQS-UHFFFAOYSA-N 4-[4-[2-[4-[4-amino-2-(trifluoromethyl)phenoxy]phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C(=CC(N)=CC=3)C(F)(F)F)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 FQEHXKKHEIYTQS-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical group C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- HJSYPLCSZPEDCQ-UHFFFAOYSA-N 5-[2-(3-amino-4-methylphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-methylaniline Chemical compound C1=C(N)C(C)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C)C(N)=C1 HJSYPLCSZPEDCQ-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- XBPCUCUWBYBCDP-UHFFFAOYSA-N Dicyclohexylamine Chemical compound C1CCCCC1NC1CCCCC1 XBPCUCUWBYBCDP-UHFFFAOYSA-N 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- XTUVJUMINZSXGF-UHFFFAOYSA-N N-methylcyclohexylamine Chemical compound CNC1CCCCC1 XTUVJUMINZSXGF-UHFFFAOYSA-N 0.000 description 1
- 101150033824 PAA1 gene Proteins 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- YHASWHZGWUONAO-UHFFFAOYSA-N butanoyl butanoate Chemical compound CCCC(=O)OC(=O)CCC YHASWHZGWUONAO-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
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- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
本発明は、ポリイミド（ＰＩ）に関するものである。このＰＩからなるフィルムは、低誘電率であり、誘電特性に優れるので、高周波帯域用のプリント回路やアンテナ基板等の絶縁層として用いることができる。 The present invention relates to polyimide (PI). Since the film made of PI has a low dielectric constant and excellent dielectric properties, it can be used as an insulating layer for a printed circuit for a high frequency band or an antenna substrate.
高周波帯域用のプリント回路やアンテナ等に用いられる高周波基板においては、例えば、非特許文献１に記載されているように、絶縁層の誘電率を低減させることが有効である。このような絶縁層に用いられるＰＩフィルムとして、特許文献１、２には、ジアミン成分として、含フッ素ジアミンを用いた耐熱性のＰＩが開示されている。
これらのＰＩは、誘電特性、耐熱性、寸法安定性に優れるが、さらに誘電率を低減させることが求められている。ＰＩの誘電率をさらに低減させる方法として、例えば、特許文献３には、含フッ素芳香族モノアミンを用いてＰＩの末端を封止する方法が提案されている。特許文献４には、無水フタル酸、アニリン等の芳香族化合物を用いてＰＩの末端を封止する方法が提案されている。しかしながら、このようなものでは、誘電率の低減効果は充分なものではなかった。
In a high-frequency substrate used for a high-frequency band printed circuit, an antenna, or the like, it is effective to reduce the dielectric constant of an insulating layer as described in Non-Patent Document 1, for example. As a PI film used for such an insulating layer, Patent Documents 1 and 2 disclose a heat resistant PI using a fluorine-containing diamine as a diamine component.
These PIs are excellent in dielectric properties, heat resistance, and dimensional stability, but it is required to further reduce the dielectric constant. As a method for further reducing the dielectric constant of PI, for example, Patent Document 3 proposes a method of sealing the end of PI with a fluorine-containing aromatic monoamine. Patent Document 4 proposes a method of sealing the end of PI with an aromatic compound such as phthalic anhydride or aniline. However, in such a case, the effect of reducing the dielectric constant was not sufficient.
本発明は上記課題を解決するものであり、誘電率を従来のものよりさらに低減させることができるＰＩの提供を目的とする。 The present invention solves the above problems, and an object thereof is to provide a PI that can further reduce the dielectric constant as compared with the conventional one.
上記課題を解決するために鋭意研究を行った結果、特定の化合物で末端封止したＰＩとすることにより、前記課題が解決できることを見出し、本発明に至った。 As a result of earnest research to solve the above problems, the inventors have found that the above problems can be solved by using a terminal-sealed PI with a specific compound, and arrived at the present invention.
本発明は、「脂環族ジカルボン酸無水物または脂環族モノアミンで末端封止された低誘電率ＰＩ」を趣旨とするものである。 The present invention is intended to "a low-dielectric constant PI end-capped with an alicyclic dicarboxylic acid anhydride or an alicyclic monoamine".
本発明のＰＩは、低誘電率であり、耐熱性、寸法安定性に優れる。従い、このＰＩからなる絶縁フィルムは、高周波帯域用のプリント回路やアンテナ基板等の絶縁層として好適に用いることができる。 The PI of the present invention has a low dielectric constant and is excellent in heat resistance and dimensional stability. Therefore, the insulating film made of this PI can be suitably used as an insulating layer for a printed circuit for a high frequency band, an antenna substrate, or the like.
以下、本発明を詳細に説明する。
本発明のＰＩは、脂環族ジカルボン酸無水物または脂環族モノアミンで末端封止された低誘電率のＰＩである。
このＰＩは、熱可塑性ＰＩであっても、非熱可塑性ＰＩであってもよい。
Hereinafter, the present invention will be described in detail.
The PI of the present invention is a low dielectric constant PI end-capped with an alicyclic dicarboxylic acid anhydride or an alicyclic monoamine.
This PI may be a thermoplastic PI or a non-thermoplastic PI.
脂環族ジカルボン酸無水物の具体例としては、シクロヘキサン−１，２−ジカルボン酸無水物、４−メチルシクロヘキサン−１，２−ジカルボン酸無水物、シクロヘキサン−１，３−ジカルボン酸無水物、１，２，３，６−テトラヒドロ無水フタル酸、無水マレイン酸、無水こはく酸等を挙げることができ、これらは単独で用いてもよく、あるいは２種以上を併用してもよい。 Specific examples of the alicyclic dicarboxylic acid anhydride include cyclohexane-1,2-dicarboxylic acid anhydride, 4-methylcyclohexane-1,2-dicarboxylic acid anhydride, cyclohexane-1,3-dicarboxylic acid anhydride, 1 2,2,3,6-tetrahydrophthalic anhydride, maleic anhydride, succinic anhydride and the like can be mentioned, and these may be used alone or in combination of two or more kinds.
脂環族モノアミンの具体例としては、シクロヘキシルアミン、ジシクロヘキシルアミン、メチルシクロヘキシルアミン等を挙げることができ、これらは単独で用いてもよく、あるいは２種以上を併用してもよい。 Specific examples of the alicyclic monoamine include cyclohexylamine, dicyclohexylamine, methylcyclohexylamine and the like, and these may be used alone or in combination of two or more kinds.
本発明の低誘電率ＰＩは、例えば、溶媒中、０℃〜５０℃の温度で、テトラカルボン酸二無水物と脂環族ジカルボン酸無水物とからなる混合物１当量に対し、略等当量（例えば、０．９９〜１．０１当量）のジアミンを反応させて、末端が脂環族ジカルボン酸無水物で封止されたポリアミック酸（ＰＡＡ）溶液を得た後、２００℃以上の温度で、脱水閉環（イミド化）することにより得ることができる。ここで、脂環族ジカルボン酸無水物の配合量（モル量）は、その半分のモル量が、酸無水物のモル量（脂環族ジカルボン酸無水物のモル量の半分と、テトラカルボン酸二無水物のモル量との和）に対し、０．１〜１５％とすることが好ましく、１〜１０％とすることがより好ましい。 The low dielectric constant PI of the present invention is, for example, at a temperature of 0 ° C. to 50 ° C. in a solvent, and is approximately equivalent to 1 equivalent of a mixture of a tetracarboxylic dianhydride and an alicyclic dicarboxylic anhydride. For example, after reacting 0.99 to 1.01 equivalent) of diamine to obtain a polyamic acid (PAA) solution whose end is sealed with an alicyclic dicarboxylic acid anhydride, at a temperature of 200 ° C. or higher, It can be obtained by dehydration ring closure (imidization). Here, the compounding amount (molar amount) of the alicyclic dicarboxylic acid anhydride is such that half the molar amount is a molar amount of the acid anhydride (half the molar amount of the alicyclic dicarboxylic acid anhydride and tetracarboxylic acid). It is preferably 0.1 to 15%, and more preferably 1 to 10%, based on the sum of the dianhydride and the molar amount thereof.
本発明の低誘電率ＰＩは、また、溶媒中、０℃〜５０℃の温度で、ジアミンと脂環族モノアミンとからなる混合物１当量に対し、略等当量（例えば、０．９９〜１．０１当量）のテトラカルボン酸二無水物を反応させて、末端が脂環族モノアミンで封止されたポリアミック酸（ＰＡＡ）溶液を得た後、２００℃以上の温度で脱水閉環（イミド化）することにより得ることができる。ここで、脂環族モノアミンの配合量（モル量）は、その半分が、アミンのモル量（脂環族モノアミンのモル量の半分と、ジアミンのモル量との和）に対し、０．１〜１５％とすることが好ましく、１〜１０％とすることがより好ましい。 The low dielectric constant PI of the present invention is also approximately equivalent to (e.g., 0.99 to 1. (01 equivalent) tetracarboxylic acid dianhydride is reacted to obtain a polyamic acid (PAA) solution whose end is sealed with an alicyclic monoamine, followed by dehydration ring closure (imidization) at a temperature of 200 ° C. or higher. Can be obtained. Here, half of the compounding amount (molar amount) of the alicyclic monoamine is 0.1 with respect to the molar amount of the amine (half the molar amount of the alicyclic monoamine and the molar amount of the diamine). -15% is preferable, and 1-10% is more preferable.
前記ＰＡＡ溶液には、 脱水閉環用の触媒として、トリメチルアミン、トリエチレンジアミン、ジメチルアニリン、イソキノリン、ピリジン、β−ピコリン等を配合することができる。これらは単独で用いてもよく、２種以上を併用してもよい。 Trimethylamine, triethylenediamine, dimethylaniline, isoquinoline, pyridine, β-picoline and the like can be added to the PAA solution as a catalyst for dehydration ring closure. These may be used alone or in combination of two or more.
前記ＰＡＡ溶液には、脱水剤として、無水酢酸、無水プロピオン酸、無水酪酸等を配合することができる。これらは単独で用いてもよく、２種以上を併用してもよい。 Acetic anhydride, propionic anhydride, butyric anhydride and the like can be added to the PAA solution as a dehydrating agent. These may be used alone or in combination of two or more.
前記テトラカルボン酸二無水物の具体例としては、ピロメリット酸二無水物（ＰＭＤＡ）、３，３′，４，４′−ビフェニルテトラカルボン酸二無水物（ＢＰＤＡ）、２，３，３′，４′−ビフェニルテトラカルボン酸二無水物、３，３′，４，４′−ベンゾフェノンテトラカルボン酸二無水物、４，４′−オキシジフタル酸二無水物、２，２−ビス（３，４−ジカルボキシフェニル）プロパン二無水物、３，３′，４，４′−ジフェニルスルホンテトラカルボン酸二無水物、３−トリフルオロメチル−１，２，４，５−ピロメリット酸二無水物、３，６−トリフルオロメチル−１，２，４，５−ピロメリット酸二無水物、４，４´−ヘキサフルオロイソプロピリデン−フタル酸二無水物（６ＦＤＡ）等を挙げることができる。これらは単独で用いてもよく、２種以上を併用してもよい。これらの中で、ＰＭＤＡ、ＢＰＤＡ、６ＦＤＡが好ましい。 Specific examples of the tetracarboxylic dianhydride include pyromellitic dianhydride (PMDA), 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride (BPDA), 2,3,3 ′. , 4'-biphenyltetracarboxylic dianhydride, 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2,2-bis (3,4) -Dicarboxyphenyl) propane dianhydride, 3,3 ', 4,4'-diphenylsulfone tetracarboxylic acid dianhydride, 3-trifluoromethyl-1,2,4,5-pyromellitic dianhydride, Examples thereof include 3,6-trifluoromethyl-1,2,4,5-pyromellitic dianhydride and 4,4′-hexafluoroisopropylidene-phthalic acid dianhydride (6FDA). These may be used alone or in combination of two or more. Among these, PMDA, BPDA and 6FDA are preferable.
前記ジアミンの具体例としては、３，３′−ビストリフルオロメチル−４，４′−ジアミノビフェニル（ＴＦＭＢ）、２，２−ビス（４−（４−アミノフェノキシ）フェニル）ヘキサフルオロプロパン（Ｆ−ＢＡＰＰ）、ｐ−フェニレンジアミン（ＰＤＡ）、４，４′−ジアミノジフェニルエーテル（ＯＤＡ）、２，２−ビス［４−（４−アミノフェノキシ）フェニル］プロパン（ＢＡＰＰ）、ｍ−フェニレンジアミン、２，４−ジアミノトルエン、４，４′−ジアミノビフェニル、３，３′−ジアミノジフェニルスルフォン、４，４′−ジアミノジフェニルスルフォン、４，４′−ジアミノジフェニルスルフィド、４，４′−ジアミノジフェニルメタン、３，４′−ジアミノジフェニルエーテル、３，３′−ジアミノジフェニルエーテル、１，４−ビス（４−アミノフェノキシ）ベンゼン、１，３−ビス（４−アミノフェノキシ）ベンゼン、１，３−ビス（３−アミノフェノキシ）ベンゼン、４，４′−ビス（４−アミノフェノキシ）ビフェニル、ビス［４−（４−アミノフェノキシ）フェニル］スルフォン、ビス［４−（３−アミノフェノキシ）フェニル］スルフォン３，３′−ビストリフルオロメチル−５，５′−ジアミノビフェニル、ビス（トリフルオロメチル）−４，４′−ジアミノジフェビス（フッ素化アルキル）−４，４′−ジアミノジフェニル、ビス（フッ素化アルコキシ）−４，４′−ジアミノジフェニル、４，４′−ビス（４−アミノテトラフルオロフェノキシ）テトラフルオロベンゼン、４，４′−ビス（４−アミノテトラフルオロフェノキシ）オクタフルオロビフェニル、２，２−ビス（４−（３−アミノフェノキシ）フェニル）プロパン、２，２−ビス（４−（３−アミノフェノキシ）フェニル）ヘキサフルオロプロパン、２，２−ビス（４−（４−アミノ−２−トリフルオロメチルフェノキシ）フェニル）ヘキサフルオロプロパン、２，２−ビス（４−（３−アミノ−５−トリフルオロメチルフェノキシ）フェニル）ヘキサフルオロプロパン、２，２−ビス（４−アミノフェニル）ヘキサフルオロプロパン、２，２−ビス（３−アミノフェニル）ヘキサフルオロプロパン、２，２−ビス（３−アミノ−４−ヒドロキシフェニル）ヘキサフルオロプロパン、２，２−ビス（３−アミノ−４−メチルフェニル）ヘキサフルオロプロパン等を挙げることができる。これらは、単独で用いてもよく、２種以上を併用してもよい。これらの中で、ＴＦＭＢ、Ｆ−ＢＡＰＰ、ＰＤＡ，ＯＤＡ，ＢＡＰＰが好ましい。 Specific examples of the diamine include 3,3'-bistrifluoromethyl-4,4'-diaminobiphenyl (TFMB) and 2,2-bis (4- (4-aminophenoxy) phenyl) hexafluoropropane (F- BAPP), p-phenylenediamine (PDA), 4,4'-diaminodiphenyl ether (ODA), 2,2-bis [4- (4-aminophenoxy) phenyl] propane (BAPP), m-phenylenediamine, 2, 4-diaminotoluene, 4,4'-diaminobiphenyl, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenylmethane, 3, 4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, , 4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 4,4'-bis (4-aminophenoxy) Biphenyl, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone 3,3′-bistrifluoromethyl-5,5′-diaminobiphenyl, bis (trifluoro Methyl) -4,4'-diaminodiphebis (fluorinated alkyl) -4,4'-diaminodiphenyl, bis (fluorinated alkoxy) -4,4'-diaminodiphenyl, 4,4'-bis (4- Aminotetrafluorophenoxy) tetrafluorobenzene, 4,4'-bis (4-aminotetrafluorophenoxy) octaful Robiphenyl, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- ( 4-amino-2-trifluoromethylphenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (3-amino-5-trifluoromethylphenoxy) phenyl) hexafluoropropane, 2,2-bis (4 -Aminophenyl) hexafluoropropane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane, 2,2-bis (3- Amino-4-methylphenyl) hexafluoropropane and the like can be mentioned. These may be used alone or in combination of two or more. Among these, TFMB, F-BAPP, PDA, ODA and BAPP are preferable.
前記溶媒の具体例としては、Ｎ，Ｎ−ジメチルアセトアミド（ＤＭＡｃ）、Ｎ−メチル−２−ピロリドン（ＮＭＰ）、Ｎ，Ｎ−ジメチルホルムアミド、Ｎ，Ｎ−ジエチルアセトアミド、テトラメチル尿素、ジメチルエチレン尿素、ジメチルスルホキシド、ジエチルスルホキシド等を挙げることができる。これらは、単独で用いてもよく、２種以上を併用してもよい。これらの中で、ＤＭＡｃ、ＮＭＰが好ましい。 Specific examples of the solvent include N, N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), N, N-dimethylformamide, N, N-diethylacetamide, tetramethylurea and dimethylethyleneurea. , Dimethyl sulfoxide, diethyl sulfoxide and the like. These may be used alone or in combination of two or more. Of these, DMAc and NMP are preferable.
このようにして得られたＰＡＡ溶液を銅箔、ガラス板等の基材上に、塗布、乾燥してＰＡＡ塗膜を形成後、２００℃以上の温度で、ＰＡＡを脱水閉環することにより、ＰＩフィルムとすることができる。ＰＩフィルムの厚みは、５〜５０μｍとすることが好ましく、１０〜３０μｍとすることがより好ましい。 The PAA solution thus obtained is applied onto a substrate such as a copper foil or a glass plate and dried to form a PAA coating film, and then the PAA is dehydrated and cyclized at a temperature of 200 ° C. or higher to give PI. It can be a film. The thickness of the PI film is preferably 5 to 50 μm, more preferably 10 to 30 μm.
ＰＩフィルムの誘電率は、２．９以下とすることが好ましく、２．８以下とすることがより好ましい。
誘電率は、ＪＩＳ−Ｃ ２１３８の規定に基づき、共振法により３ＧＨｚで測定することに確認することができる。
The dielectric constant of the PI film is preferably 2.9 or less, more preferably 2.8 or less.
The permittivity can be confirmed to be measured at 3 GHz by the resonance method based on the regulation of JIS-C2138.
ＰＩフィルムのＣＴＥは、４０ｐｐｍ以下とすることが好ましく、３０ｐｐｍ以下とすることがより好ましい。
ＣＴＥは、ＪＩＳ−Ｋ７１９７の規定に基づき、ＴＭＡ（熱機械分析）を用いて、１００〜２００℃での平均線膨張率を測定することにより確認することができる。
The CTE of the PI film is preferably 40 ppm or less, more preferably 30 ppm or less.
CTE can be confirmed by measuring the average coefficient of linear expansion at 100 to 200 ° C. using TMA (thermo-mechanical analysis) based on JIS-K7197.
このようにすることにより、高周波帯域用のプリント回路やアンテナ基板等の絶縁層として好適に用いることができる。 By doing so, it can be suitably used as an insulating layer of a printed circuit for a high frequency band or an antenna substrate.
以下、実施例に基づき本発明を具体的に説明するが、本発明はこれらの実施例のみに限定されるものではない。 Hereinafter, the present invention will be specifically described based on Examples, but the present invention is not limited to these Examples.
＜実施例１＞
ガラス製反応容器に、窒素ガス雰囲気下、テトラカルボン酸二無水物成分として「ＢＰＤＡ：０．６０モル」、ジアミン成分として、「ＴＦＭＢ：０．５８２モル、シクロヘキシルアミン０．０３６モル」、溶媒としてＤＭＡｃを仕込み、攪拌下、４０℃で１０時間反応させることにより、固形分濃度が１８質量％の均一なＰＡＡ−１溶液を得た。このＰＩ溶液を、熱処理後の厚みが１５μｍとなるようにガラス板に塗布した。続いて、窒素ガス雰囲気下、１３０℃で２０分乾燥後、徐々に３５０℃でまで昇温し、３５０℃で１時間熱処理することによりＰＩフガラス板上に積層されたＰＩ被膜を得た。この被膜を剥離して、ＰＩからなる絶縁フィルムを得た。この絶縁フィルムの誘電率は２．９であり、ＣＴＥは２１ｐｐｍであった。
<Example 1>
In a glass reaction container, in a nitrogen gas atmosphere, as a tetracarboxylic dianhydride component "BPDA: 0.60 mol", as a diamine component "TFMB: 0.582 mol, cyclohexylamine 0.036 mol", as a solvent DMAc was charged and reacted at 40 ° C. for 10 hours with stirring to obtain a uniform PAA-1 solution having a solid content concentration of 18 mass%. This PI solution was applied to a glass plate so that the thickness after heat treatment was 15 μm. Subsequently, after drying at 130 ° C. for 20 minutes in a nitrogen gas atmosphere, the temperature was gradually raised to 350 ° C. and heat treatment was performed at 350 ° C. for 1 hour to obtain a PI coating film laminated on the PI glass plate. The coating was peeled off to obtain an insulating film made of PI. The dielectric constant of this insulating film was 2.9, and the CTE was 21 ppm.
＜実施例２＞
テトラカルボン酸二無水物成分として、「ＢＰＤＡ：０．５７２モル、４−メチルシクロヘキサン−１，２−ジカルボン酸無水物：０．０３６モル」、ジアミン成分として、「ＴＦＭＢ：０．６０モル」を用いたこと以外は、実施例１と同様にして、ＰＩからなる絶縁フィルムを得た。この絶縁フィルムの誘電率は２．８であり、ＣＴＥは１９ｐｐｍであった。
<Example 2>
As a tetracarboxylic dianhydride component, "BPDA: 0.572 mol, 4-methylcyclohexane-1,2-dicarboxylic acid anhydride: 0.036 mol", and as a diamine component, "TFMB: 0.60 mol". An insulating film made of PI was obtained in the same manner as in Example 1 except that the insulating film was used. The dielectric constant of this insulating film was 2.8, and the CTE was 19 ppm.
＜実施例３＞
テトラカルボン酸二無水物成分として、「ＢＰＤＡ：０．５７２モル、シクロヘキサン−１，２−ジカルボン酸無水物：０．０３６モル」、ジアミン成分として、「Ｆ−ＢＡＰＰ：０．６０モル」を用いたこと以外は、実施例１と同様にして、ＰＩからなる絶縁フィルムを得た。この絶縁フィルムの誘電率は２．７であり、ＣＴＥは２５ｐｐｍであった。
<Example 3>
As the tetracarboxylic acid dianhydride component, "BPDA: 0.572 mol, cyclohexane-1,2-dicarboxylic acid anhydride: 0.036 mol", and as the diamine component, "F-BAPP: 0.60 mol" is used. An insulating film made of PI was obtained in the same manner as in Example 1 except for the above. The dielectric constant of this insulating film was 2.7, and the CTE was 25 ppm.
＜比較例１＞
テトラカルボン酸二無水物成分として、「ＢＰＤＡ：０．６モル」、ジアミン成分として、「ＴＦＭＢ：０．６１８モル」を用いたこと以外は、実施例１と同様にして、ＰＩからなる絶縁フィルムを得た。この絶縁フィルムの誘電率は３．１であり、ＣＴＥは２９ｐｐｍであった。
<Comparative Example 1>
An insulating film made of PI in the same manner as in Example 1 except that "BPDA: 0.6 mol" was used as the tetracarboxylic dianhydride component and "TFMB: 0.618 mol" was used as the diamine component. Got The dielectric constant of this insulating film was 3.1, and the CTE was 29 ppm.
＜比較例２＞
テトラカルボン酸二無水物成分として、「ＢＰＤＡ：０．６１８モル」、ジアミン成分として、「Ｆ−ＢＡＰＰ：０．６０モル」を用いたこと以外は、実施例１と同様にして、ＰＩからなる絶縁フィルムを得た。この絶縁フィルムの誘電率は３．０であり、ＣＴＥは３１ｐｐｍであった。
<Comparative example 2>
It was composed of PI in the same manner as in Example 1 except that "BPDA: 0.618 mol" was used as the tetracarboxylic dianhydride component and "F-BAPP: 0.60 mol" was used as the diamine component. An insulating film was obtained. The dielectric constant of this insulating film was 3.0, and the CTE was 31 ppm.
＜比較例３＞
ジカルボン酸無水物として、無水フタル酸を用いたこと以外は、実施例１と同様にして、ＰＩからなる絶縁フィルムを得た。この絶縁フィルムの誘電率は３．０であり、ＣＴＥは２５ｐｐｍであった。
<Comparative example 3>
An insulating film made of PI was obtained in the same manner as in Example 1 except that phthalic anhydride was used as the dicarboxylic acid anhydride. The dielectric constant of this insulating film was 3.0, and the CTE was 25 ppm.
＜比較例４＞
モノアミンとして、アニリンを用いたこと以外は、実施例１と同様にして、ＰＩからなる絶縁フィルムを得た。この絶縁フィルムの誘電率は３．１であり、ＣＴＥは２８ｐｐｍであった。
<Comparative example 4>
An insulating film made of PI was obtained in the same manner as in Example 1 except that aniline was used as the monoamine. The dielectric constant of this insulating film was 3.1, and the CTE was 28 ppm.
実施例で示したように、本発明のＰＩからなるフィルムは、比較例で得られたＰＩフィルムに対して、誘電率が低減されていることが判る。また、本発明のＰＩからなるフィルムは、ＣＴＥが３０ｐｐｍ以下と低く、良好な寸法安定性を有していることが判る。 As shown in the examples, it can be seen that the film made of the PI of the present invention has a lower dielectric constant than the PI film obtained in the comparative example. Further, it can be seen that the film made of the PI of the present invention has a low CTE of 30 ppm or less and has good dimensional stability.
本発明のＰＩは、誘電特性に優れ、良好な寸法安定性も備えている。従い、このＰＩからなる絶縁フィルムは、高周波帯域用のプリント回路やアンテナ基板等の絶縁層として好適に用いることができる。
The PI of the present invention has excellent dielectric properties and also has good dimensional stability. Therefore, the insulating film made of this PI can be suitably used as an insulating layer for a printed circuit for a high frequency band, an antenna substrate, or the like.
Claims (1)
A low dielectric constant polyimide end-capped with an alicyclic dicarboxylic acid anhydride or an alicyclic monoamine.
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