JP2020053501A - Power module - Google Patents

Power module Download PDF

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JP2020053501A
JP2020053501A JP2018179882A JP2018179882A JP2020053501A JP 2020053501 A JP2020053501 A JP 2020053501A JP 2018179882 A JP2018179882 A JP 2018179882A JP 2018179882 A JP2018179882 A JP 2018179882A JP 2020053501 A JP2020053501 A JP 2020053501A
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sintered material
silver sintered
power module
surrounding
copper electrode
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JP6991950B2 (en
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恵美 佐藤
Emi Sato
恵美 佐藤
哲 小野寺
Satoru Onodera
哲 小野寺
慎哉 齋藤
Shinya Saito
慎哉 齋藤
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Keihin Corp
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Keihin Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

To prevent oxidation of a copper electrode.SOLUTION: Provided is a power module 1 that comprises: a power semiconductor 4; a copper electrode 3 connected with the power semiconductor 4; and a silver sintered material 5 for bonding between the copper electrode 3 and the power semiconductor 4. The power module 1 comprises a metal member 6 arranged around the silver sintered material 5, on the copper electrode 3. The metal member 6 is composed of a material whose redox potential is larger than that of the copper electrode 3.SELECTED DRAWING: Figure 1

Description

本発明は、パワーモジュールに関するものである。   The present invention relates to a power module.

例えば、特許文献１には、電子部品搭載基板の製造方法が開示されている。特許文献１によれば、銅あるいは銅メッキ板に対して、銀ペースト中の銀を焼結させることにより形成される銀接合層により電子部品を接合させることが記載されている。このような構成とすることにより、電子部品を銅板上に接合欠陥なく接合させることが可能である。したがって、上記構成は、例えば、パワーモジュールにおいてパワー半導体を基板上の銅電極に対して接合する際に用いられる。   For example, Patent Document 1 discloses a method for manufacturing an electronic component mounting board. Patent Literature 1 describes that an electronic component is joined to a copper or copper plated plate by a silver joining layer formed by sintering silver in a silver paste. With such a configuration, the electronic component can be bonded onto the copper plate without a bonding defect. Therefore, the above configuration is used, for example, when joining a power semiconductor to a copper electrode on a substrate in a power module.

特開２０１５−５３４１４号公報JP-A-2005-53414

上述した構成において、パワー半導体のように発熱する部品を用いており、さらに外的要因により高温となる場所に配置される場合には、銅電極や銀焼結材が高温となる場合がある。このような場合には、銀焼結材において還元反応が生じ、銀焼結材から酸素が放出される。したがって、放出された酸素が銅電極を酸化させることにより、銅電極と銀焼結材との接合部の剥離が生じる可能性がある。   In the above-described configuration, when a heat-generating component such as a power semiconductor is used, and the device is placed in a place where the temperature becomes high due to external factors, the temperature of the copper electrode or the silver sintered material may become high. In such a case, a reduction reaction occurs in the silver sintered material, and oxygen is released from the silver sintered material. Therefore, the released oxygen may oxidize the copper electrode, which may cause separation of the joint between the copper electrode and the silver sintered material.

本発明は、上述する問題点に鑑みてなされたもので、銅電極の酸化を防止することを目的とする。   The present invention has been made in view of the above problems, and has as its object to prevent oxidation of a copper electrode.

上記目的を達成するために、本発明では、第１の手段として、パワー半導体と、前記パワー半導体と接続される銅電極と、前記銅電極と前記パワー半導体とを接合する銀焼結材とを備えるパワーモジュールであって、前記銅電極上において前記銀焼結材の周囲に配置される金属部材を備え、前記金属部材は、前記銅電極よりも酸化還元電位が大きい材料により構成される、という構成を採用する。   In order to achieve the above object, in the present invention, as a first means, a power semiconductor, a copper electrode connected to the power semiconductor, and a silver sintered material joining the copper electrode and the power semiconductor are used. A power module, comprising: a metal member disposed around the silver sintered material on the copper electrode, wherein the metal member is made of a material having a higher oxidation-reduction potential than the copper electrode. Adopt configuration.

第２の手段として、上記第１の手段において、前記金属部材は、亜鉛により構成される、という構成を採用する。   As a second means, in the first means, a configuration is adopted in which the metal member is made of zinc.

第３の手段として、上記第１または２の手段において、前記金属部材は、前記銀焼結材に接触して設けられる、という構成を採用する。   As a third means, in the above first or second means, a configuration is adopted in which the metal member is provided in contact with the silver sintered material.

第４の手段として、上記第１〜３のいずれかの手段において、前記金属部材は、前記銀焼結材の全周を囲うように配置される、という構成を採用する。   As a fourth means, in any one of the first to third means, a configuration is adopted in which the metal member is arranged so as to surround the entire periphery of the silver sintered material.

本発明によれば、銀焼結材の周囲に金属部材を設けている。この金属部材は、銅電極よりも酸化還元電位が大きいため、銅電極が酸化するよりも前に酸素と結合し、酸化する。したがって、銀焼結材において還元反応が生じた際に、金属部材を酸化させることで、銅電極の酸化を防止することが可能である。   According to the present invention, the metal member is provided around the silver sintered material. Since this metal member has a higher oxidation-reduction potential than the copper electrode, it binds to oxygen and oxidizes before the copper electrode oxidizes. Therefore, when a reduction reaction occurs in the silver sintered material, it is possible to prevent oxidation of the copper electrode by oxidizing the metal member.

本発明の一実施形態に係るパワーモジュールの一部を示す模式断面図である。FIG. 2 is a schematic sectional view showing a part of the power module according to one embodiment of the present invention. 本発明の一実施形態に係るパワーモジュールの一部を示す平面図である。It is a top view showing a part of power module concerning one embodiment of the present invention. 本発明の一実施形態に係るパワーモジュールの変形例を示す平面図である。It is a top view showing the modification of the power module concerning one embodiment of the present invention. 本発明の一実施形態に係るパワーモジュールの変形例を示す平面図である。It is a top view showing the modification of the power module concerning one embodiment of the present invention.

以下、図面を参照して、本発明に係るパワーモジュールの一実施形態について説明する。   Hereinafter, an embodiment of a power module according to the present invention will be described with reference to the drawings.

［第１実施形態］
パワーモジュール１は、図１及び図２に示すように、絶縁基板２と、電極３と、複数のパワー半導体チップ４と、銀焼結材接合層５と、囲撓部材６（金属部材）と、絶縁基板２、電極３、複数のパワー半導体チップ４、銀焼結材接合層５及び囲撓部材６を収容する不図示のケーシングとを備えている。 [First Embodiment]
As shown in FIGS. 1 and 2, the power module 1 includes an insulating substrate 2, electrodes 3, a plurality of power semiconductor chips 4, a silver sintered material bonding layer 5, a surrounding member 6 (metal member), , An insulating substrate 2, electrodes 3, a plurality of power semiconductor chips 4, a silver sintered material bonding layer 5, and a casing (not shown) for accommodating the surrounding flexible member 6.

絶縁基板２は、パワー半導体チップが搭載される板部材である。なお、絶縁基板２は、パワー半導体チップ４が設けられる第１面と、第１面の裏面となる第２面との間が絶縁されている。   The insulating substrate 2 is a plate member on which the power semiconductor chip is mounted. Note that the insulating substrate 2 is insulated between a first surface on which the power semiconductor chip 4 is provided and a second surface which is a back surface of the first surface.

電極３は、絶縁基板２の両面に設けられる銅（Ｃｕ）製の電極である。電極３は、電子回路の一部とされ、パワー半導体チップ４と電気的に接続されている。   The electrodes 3 are copper (Cu) electrodes provided on both surfaces of the insulating substrate 2. The electrode 3 is a part of an electronic circuit, and is electrically connected to the power semiconductor chip 4.

パワー半導体チップ４は、例えば、ＩＧＢＴ（Insulated Gate Bipolar Transistor）であり、電極３に対して銀焼結材接合層５により接合されている。また、パワー半導体チップ４は、不図示であるが、絶縁基板２上に複数設けられている。このようなパワー半導体チップ４は、直流を交流に変換、または電圧及び周波数の変換を目的として実装されている。   The power semiconductor chip 4 is, for example, an IGBT (Insulated Gate Bipolar Transistor), and is joined to the electrode 3 by a silver sintered material joining layer 5. Although not shown, a plurality of power semiconductor chips 4 are provided on the insulating substrate 2. Such a power semiconductor chip 4 is mounted for the purpose of converting DC to AC or converting voltage and frequency.

銀焼結材接合層５は、銀焼結材により構成され、電極３とパワー半導体チップ４とを電気的に接続させる層であり、外周面が外部に露出した状態とされる。銀焼結材接合層５は、銀の微粒粉を約３００℃で焼成することにより部材同士を接合する。   The silver sintered material joining layer 5 is a layer made of a silver sintered material and is a layer for electrically connecting the electrode 3 and the power semiconductor chip 4, and has an outer peripheral surface exposed to the outside. The silver sintered material joining layer 5 joins members by firing fine silver powder at about 300 ° C.

囲撓部材６は、電極３上において銀焼結材接合層５を囲んで設けられる環状の部材であり、内周が銀焼結材接合層５の外周と全周において接触した状態で配置される。囲撓部材６は、亜鉛（Ｚｎ）により構成されている。亜鉛は、銅よりも酸化還元電位が大きく、酸素と結合しやすい性質を有している。なお、囲撓部材６の材質は、銅よりも酸化還元電位が大きく、かつ表面に不働態を形成しない素材が適している。   The surrounding member 6 is an annular member provided on the electrode 3 so as to surround the silver sintered material joining layer 5, and is arranged in a state where the inner periphery is in contact with the outer periphery of the silver sintered material joining layer 5 on the entire periphery. You. The surrounding member 6 is made of zinc (Zn). Zinc has a higher oxidation-reduction potential than copper and has a property of easily binding to oxygen. The material of the surrounding bending member 6 is preferably a material having a higher oxidation-reduction potential than copper and not forming a passive state on the surface.

このような本実施形態のパワーモジュール１は、パワー半導体チップ４から生じる熱や、外的要因による熱により、高温となる場合がある。このような場合に、銀焼結材接合層５を構成する銀が、還元反応を生じ、酸素を外周へと放出することがある。このとき、囲撓部材６が銀焼結材接合層５の周囲に配置されることにより、放出された酸素は、銅よりも酸化還元電位の大きな亜鉛により構成されている囲撓部材６と結びつく。したがって、電極３と酸素が結び付くよりも前に囲撓部材６を酸化させることで、銀焼結材接合層５から生じる酸素により電極３が酸化して腐食することを、防止できる。   Such a power module 1 of the present embodiment may become high in temperature due to heat generated from the power semiconductor chip 4 or heat due to external factors. In such a case, the silver constituting the silver sintered material bonding layer 5 may cause a reduction reaction and release oxygen to the outer periphery. At this time, since the surrounding member 6 is arranged around the silver sintered material joining layer 5, the released oxygen is combined with the surrounding member 6 made of zinc having a higher oxidation-reduction potential than copper. . Therefore, by oxidizing the surrounding flexible member 6 before the electrode 3 and oxygen are combined, it is possible to prevent the electrode 3 from being oxidized and corroded by oxygen generated from the silver sintered material bonding layer 5.

また、本実施形態によれば、囲撓部材６は、銀焼結材接合層５に対して接触した状態で設けられている。これにより、銀焼結材接合層５から発生した酸素が囲撓部材６と接触しやすく、電極３の酸化をより効果的に防止できる。   Further, according to the present embodiment, the surrounding flexible member 6 is provided in a state of being in contact with the silver sintered material joining layer 5. Thereby, oxygen generated from the silver sintered material joining layer 5 easily comes into contact with the surrounding bending member 6, and the oxidation of the electrode 3 can be more effectively prevented.

また、本実施形態によれば、囲撓部材６を亜鉛により構成している。上述したように、亜鉛は、表面のみではなく内部まで酸化する性質を有している。このため、囲撓部材６の表面積が小さくとも、多くの酸素と結合させることが可能であり、電極３の酸化を長期間に渡って効率的に防止できる。   According to the present embodiment, the surrounding bending member 6 is made of zinc. As described above, zinc has a property of oxidizing not only on the surface but also on the inside. For this reason, even if the surface area of the surrounding flexible member 6 is small, it can be combined with a large amount of oxygen, and the oxidation of the electrode 3 can be efficiently prevented over a long period of time.

［第２実施形態］
続いて、上記第１実施形態の変形例を第２実施形態として図３を参照して説明する。なお、以下の説明において、第１実施形態と同一の構成については符号を同一とし、説明を省略する。 [Second embodiment]
Subsequently, a modified example of the first embodiment will be described as a second embodiment with reference to FIG. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

本実施形態におけるパワーモジュール１は、囲撓部材６に代えて囲撓部材６Ａを備えている。囲撓部材６Ａは、電極３上において、銀焼結材接合層５の外周を囲んだ状態で設けられる環状部材であり、亜鉛により構成されている。また、囲撓部材６Ａは、銀焼結材接合層５と接触しないように配置されている。   The power module 1 according to the present embodiment includes a surrounding bending member 6 </ b> A instead of the surrounding bending member 6. The surrounding bending member 6A is an annular member provided on the electrode 3 so as to surround the outer periphery of the silver sintered material joining layer 5, and is made of zinc. In addition, the surrounding bending member 6 </ b> A is arranged so as not to contact the silver sintered material joining layer 5.

このようなパワーモジュール１においても、上記第１実施形態と同様に、銀焼結材接合層５から還元反応により発生した酸素が、囲撓部材６Ａと結合することにより、電極３の腐食を防止している。   In such a power module 1 as well, as in the first embodiment, the oxygen generated by the reduction reaction from the silver sintered material bonding layer 5 is bonded to the surrounding bending member 6A, thereby preventing the electrode 3 from being corroded. doing.

また、絶縁基板２の構造上、銀焼結材接合層５と囲撓部材６Ａとを接触させることができない場合においても、囲撓部材６Ａにより電極３の腐食を防止することが可能である。   Further, even when the structure of the insulating substrate 2 prevents the silver sintered material bonding layer 5 from contacting the surrounding flexible member 6A, the surrounding member 6A can prevent the electrode 3 from being corroded.

［第３実施形態］
上記第１実施形態の変形例を第３実施形態として図４を参照して説明する。なお、以下の説明において、第１実施形態と同一の構成については符号を同一とし、説明を省略する。 [Third embodiment]
A modification of the first embodiment will be described as a third embodiment with reference to FIG. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

本実施形態におけるパワーモジュール１は、囲撓部材６に代えて複数の金属部材６Ｂを備えている。複数の金属部材６Ｂは、電極３上に配置される長尺状の部材であり、銀焼結材接合層５を囲むように配置されている。また、金属部材６Ｂは、亜鉛により構成されている。   The power module 1 in the present embodiment includes a plurality of metal members 6B instead of the surrounding bending members 6. The plurality of metal members 6 </ b> B are long members arranged on the electrode 3, and are arranged so as to surround the silver sintered material joining layer 5. The metal member 6B is made of zinc.

このようなパワーモジュール１においても、上記第１実施形態と同様に、銀焼結材接合層５から還元反応により発生した酸素が、囲撓部材６Ａと結合することにより、電極３の腐食を防止している。   In such a power module 1 as well, as in the first embodiment, the oxygen generated by the reduction reaction from the silver sintered material bonding layer 5 is bonded to the surrounding bending member 6A, thereby preventing the electrode 3 from being corroded. doing.

また、銀焼結材接合層５を複数の金属部材６Ｂにより囲む構成とすることにより、金属部材６Ｂの配置の自由度が向上する。さらに、金属部材６Ｂの表面積を大きくすることが可能であり、酸素との結合率を向上できる。   In addition, since the silver sintered material joining layer 5 is configured to be surrounded by the plurality of metal members 6B, the degree of freedom of arrangement of the metal members 6B is improved. Further, the surface area of the metal member 6B can be increased, and the bonding ratio with oxygen can be improved.

以上、図面を参照しながら本発明の好適な実施形態について説明したが、本発明は上記実施形態に限定されるものではない。上述した実施形態において示した各構成部材の諸形状や組み合わせ等は一例であって、本発明の趣旨から逸脱しない範囲において設計要求等に基づき種々変更可能である。   The preferred embodiment of the present invention has been described with reference to the drawings, but the present invention is not limited to the above embodiment. The shapes, combinations, and the like of the constituent members shown in the above-described embodiments are merely examples, and can be variously changed based on design requirements and the like without departing from the spirit of the present invention.

上記実施形態においては、囲撓部材６、囲撓部材６Ａ及び金属部材６Ｂは、亜鉛により構成されているものとしたが、本発明はこれに限定されない。本発明の囲撓部材６Ａは、不働態を形成しない部材であり、かつ銅よりも酸化還元電位が大きい素材であれば、合金や、鉄等としてもよい。   In the above embodiment, the surrounding member 6, the surrounding member 6A and the metal member 6B are made of zinc, but the present invention is not limited to this. The surrounding bending member 6A of the present invention is a member that does not form a passive state and may be an alloy, iron, or the like as long as the material has a higher oxidation-reduction potential than copper.

上記実施形態においては、囲撓部材６は、銀焼結材接合層５の全周を囲うように設けられるものとしたが、本発明はこれに限定されない。基板２の形状や電極３の形状等によって、囲撓部材６は、銀焼結材接合層５の一部のみを囲うものとしてもよい。   In the above embodiment, the surrounding flexible member 6 is provided so as to surround the entire periphery of the silver sintered material joining layer 5, but the present invention is not limited to this. Depending on the shape of the substrate 2, the shape of the electrode 3, etc., the surrounding flexible member 6 may surround only a part of the silver sintered material bonding layer 5.

また、囲撓部材６、囲撓部材６Ａ及び金属部材６Ｂは、表面積を増加させる加工（例えば表面に溝を設ける等）を行うことにより、酸素との接触面積を向上させることが可能である。これにより、囲撓部材６、囲撓部材６Ａ及び金属部材６Ｂは、より酸素と結合しやすくなり、電極３の腐食を防止しやすくなる。   Further, the contact area with oxygen can be improved by performing processing (for example, providing a groove on the surface) of the surrounding member 6, the surrounding member 6A, and the metal member 6B to increase the surface area. Accordingly, the surrounding member 6, the surrounding member 6A, and the metal member 6B are more easily bonded to oxygen, and the corrosion of the electrode 3 is more easily prevented.

１……パワーモジュール
２……絶縁基板
３……電極
４……パワー半導体チップ
５……銀焼結材接合層
６……囲撓部材
６Ａ……囲撓部材
６Ｂ……金属部材 1 Power module 2 Insulating substrate 3 Electrode 4 Power semiconductor chip 5 Silver bonding material joining layer 6 Encircling member 6A Encircling member 6B Metal member

Claims (4)

パワー半導体と、前記パワー半導体と接続される銅電極と、前記銅電極と前記パワー半導体とを接合する銀焼結材とを備えるパワーモジュールであって、
前記銅電極上において前記銀焼結材の周囲に配置される金属部材を備え、
前記金属部材は、前記銅電極よりも酸化還元電位が大きい材料により構成される
ことを特徴とするパワーモジュール。 A power module comprising a power semiconductor, a copper electrode connected to the power semiconductor, and a silver sintered material that joins the copper electrode and the power semiconductor,
A metal member is provided around the silver sintered material on the copper electrode,
The power module, wherein the metal member is made of a material having a higher oxidation-reduction potential than the copper electrode. 前記金属部材は、亜鉛により構成されることを特徴とする請求項１記載のパワーモジュール。   The power module according to claim 1, wherein the metal member is made of zinc. 前記金属部材は、前記銀焼結材に接触して設けられることを特徴とする請求項１または２記載のパワーモジュール。   The power module according to claim 1, wherein the metal member is provided in contact with the silver sintered material. 前記金属部材は、前記銀焼結材の全周を囲うように配置されることを特徴とする請求項１〜３のいずれか一項に記載のパワーモジュール。   The power module according to any one of claims 1 to 3, wherein the metal member is arranged so as to surround an entire circumference of the silver sintered material.
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