JP2020019991A5 - - Google Patents
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- JP2020019991A5 JP2020019991A5 JP2018143735A JP2018143735A JP2020019991A5 JP 2020019991 A5 JP2020019991 A5 JP 2020019991A5 JP 2018143735 A JP2018143735 A JP 2018143735A JP 2018143735 A JP2018143735 A JP 2018143735A JP 2020019991 A5 JP2020019991 A5 JP 2020019991A5
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- film forming
- film
- potential
- forming apparatus
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- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 2
- 230000003334 potential Effects 0.000 claims description 2
- 230000000875 corresponding Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Description
本発明の一側面としての成膜装置は、成膜対象物およびターゲットが配置されるチャンバと、前記チャンバ内の、前記ターゲットを介して前記成膜対象物と対向する位置に配置される磁場発生手段と、備えた成膜装置であって、前記ターゲットの長手方向に並んで配置された複数の導電部材と、前記複数の導電部材のうちの少なくとも2つの導電部材の電位が異なるように、前記複数の導電部材の少なくとも1つに電位を印加する電位印加手段と、有することを特徴とする。
また、本発明の別の一側面としての成膜装置は、成膜対象物およびターゲットが配置されるチャンバと、前記チャンバ内の、前記ターゲットを介して前記成膜対象物と対向する位置に配置される磁場発生手段と、を備えた成膜装置であって、前記ターゲットの表面の長手方向における一部の領域にのみ前記ターゲットと対向する導電部材と、前記導電部材に電位を印加する電位印加手段と、を有することを特徴とする。
また、本発明の別の一側面としての電子デバイスの製造方法は、成膜対象物をチャンバ内に配置し、前記成膜対象物と対向して配置されたターゲットから飛翔するスパッタ粒子を堆積させて成膜するスパッタ成膜工程を含む電子デバイスの製造方法であって、前記スパッタ成膜工程は、前記ターゲットの長手方向に垂直な断面における前記ターゲットの周囲の空間電位分布を前記ターゲットの中央部と端部とで異ならせた状態で成膜する工程であることを特徴とする。
The film forming apparatus as one aspect of the present invention is a magnetic field generation device in which a film forming object and a target are arranged and a position in the chamber facing the film forming object via the target. means, a film forming apparatus having a plurality of conductive members arranged side by side in the longitudinal direction before Symbol target, so that the potential of the at least two conductive members of the plurality of conductive members are different, It is characterized by having a potential applying means for applying a potential to at least one of the plurality of conductive members.
Further, the film forming apparatus as another aspect of the present invention is arranged at a position in the chamber where the film forming object and the target are arranged and facing the film forming object via the target in the chamber. a film forming apparatus and a magnetic field generating means which is, potentials applied to the conductive member facing the target only a part of the region, a potential to the conductive member in the longitudinal direction of the surface of the pre-Symbol target It is characterized by having an application means.
Further, in the method for manufacturing an electronic device as another aspect of the present invention, a film-forming object is arranged in a chamber, and spatter particles flying from a target arranged facing the film-forming object are deposited. This is a method for manufacturing an electronic device including a sputter film forming step of forming a film, wherein the sputter film forming step sets a spatial potential distribution around the target in a cross section perpendicular to the longitudinal direction of the target to a central portion of the target. It is characterized in that it is a step of forming a film in a state where the film is different from the end portion.
Claims (18)
前記チャンバ内の、前記ターゲットを介して前記成膜対象物と対向する位置に配置される磁場発生手段と、
を備えた成膜装置であって、
前記ターゲットの長手方向に並んで配置された複数の導電部材と、
前記複数の導電部材のうちの少なくとも2つの導電部材の電位が異なるように、前記複数の導電部材の少なくとも1つに電位を印加する電位印加手段と、
を有することを特徴とする成膜装置。 The chamber in which the film-forming object and the target are placed, and
A magnetic field generating means arranged at a position in the chamber facing the film-forming object via the target.
A film forming apparatus having a,
A plurality of conductive members arranged side by side in the longitudinal direction before Symbol target,
A potential applying means for applying a potential to at least one of the plurality of conductive members so that the potentials of at least two of the plurality of conductive members are different.
A film forming apparatus characterized by having.
前記チャンバ内の、前記ターゲットを介して前記成膜対象物と対向する位置に配置される磁場発生手段と、
を備えた成膜装置であって、
前記ターゲットの表面の長手方向における一部の領域にのみ前記ターゲットと対向する導電部材と、
前記導電部材に電位を印加する電位印加手段と、
を有することを特徴とする成膜装置。 The chamber in which the film-forming object and the target are placed, and
A magnetic field generating means arranged at a position in the chamber facing the film-forming object via the target.
A film forming apparatus having a,
And the conductive member facing the target only in a partial region in the longitudinal direction of the surface of the pre-Symbol target,
An electric potential applying means for applying an electric potential to the conductive member, and
A film forming apparatus characterized by having.
前記表面形状計測手段によって計測された前記ターゲットの表面形状に応じて、前記電位印加手段によって印加する電位を制御する制御部と、を有することを特徴とする請求項1から7のいずれか一項に記載の成膜装置。 A surface shape measuring means for measuring the surface shape of the target, and
Any one of claims 1 to 7, further comprising a control unit that controls the potential applied by the potential applying means according to the surface shape of the target measured by the surface shape measuring means. The film forming apparatus according to.
前記膜厚分布測定手段によって測定された前記膜の膜厚分布に応じて、前記電位印加手段によって印加する電位を制御する制御部と、
を有することを特徴とする請求項1から7のいずれか一項に記載の成膜装置。 A film thickness distribution measuring means for measuring the film thickness distribution of the film formed on the film-forming object,
A control unit that controls the potential applied by the potential applying means according to the film thickness distribution of the film measured by the film thickness distribution measuring means.
The film forming apparatus according to any one of claims 1 to 7, wherein the film forming apparatus has.
前記スパッタ成膜工程は、前記ターゲットの長手方向に垂直な断面における前記ターゲットの周囲の空間電位分布を前記ターゲットの中央部と端部とで異ならせた状態で成膜する工程である
ことを特徴とする電子デバイスの製造方法。 A method for manufacturing an electronic device, which comprises a sputter film forming step of arranging a film forming object in a chamber and depositing sputter particles flying from a target arranged opposite to the film forming object to form a film. ,
The sputter film forming step is a step of forming a film in a state where the spatial potential distribution around the target in a cross section perpendicular to the longitudinal direction of the target is different between the central portion and the end portion of the target. The manufacturing method of the electronic device.
ことを特徴とする請求項14に記載の電子デバイスの製造方法。 In the sputter film forming step, by applying a potential to the conductive member arranged around the target, the spatial potential distribution around the target in the cross section perpendicular to the longitudinal direction of the target is set with the central portion of the target. The method for manufacturing an electronic device according to claim 14, wherein the step is a step of forming a film in a state different from that of the end portion.
前記スパッタ成膜工程において複数の前記導電部材の少なくとも2つの導電部材の電位が異なるように、複数の前記導電部材の少なくとも1つに電位が印加される
ことを特徴とする請求項15に記載の電子デバイスの製造方法。 A plurality of the conductive members are arranged along the longitudinal direction of the target.
The sputter deposition process odor as the potential of the at least two conductive members of said conductive member several different Te, claim 15, characterized in that at least one of the potential of the conductive member more than is applied The method for manufacturing an electronic device according to.
ことを特徴とする請求項15に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 15, wherein the conductive member is arranged at a central portion in the longitudinal direction of the target.
ことを特徴とする請求項16に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 16, wherein the conductive members are arranged at both ends in the longitudinal direction of the target.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018143735A JP7138504B2 (en) | 2018-07-31 | 2018-07-31 | Film forming apparatus and electronic device manufacturing method |
KR1020180151459A KR102695213B1 (en) | 2018-07-31 | 2018-11-29 | Film formation apparatus and manufacturing method of electronic device |
CN201910586973.0A CN110777338A (en) | 2018-07-31 | 2019-07-02 | Film forming apparatus and method for manufacturing electronic device |
JP2022141500A JP7461427B2 (en) | 2018-07-31 | 2022-09-06 | Film forming apparatus and method for manufacturing electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018143735A JP7138504B2 (en) | 2018-07-31 | 2018-07-31 | Film forming apparatus and electronic device manufacturing method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022141500A Division JP7461427B2 (en) | 2018-07-31 | 2022-09-06 | Film forming apparatus and method for manufacturing electronic device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020019991A JP2020019991A (en) | 2020-02-06 |
JP2020019991A5 true JP2020019991A5 (en) | 2021-09-24 |
JP7138504B2 JP7138504B2 (en) | 2022-09-16 |
Family
ID=69383875
Family Applications (2)
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JP2018143735A Active JP7138504B2 (en) | 2018-07-31 | 2018-07-31 | Film forming apparatus and electronic device manufacturing method |
JP2022141500A Active JP7461427B2 (en) | 2018-07-31 | 2022-09-06 | Film forming apparatus and method for manufacturing electronic device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2022141500A Active JP7461427B2 (en) | 2018-07-31 | 2022-09-06 | Film forming apparatus and method for manufacturing electronic device |
Country Status (3)
Country | Link |
---|---|
JP (2) | JP7138504B2 (en) |
KR (1) | KR102695213B1 (en) |
CN (1) | CN110777338A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7140801B2 (en) * | 2020-07-29 | 2022-09-21 | キヤノントッキ株式会社 | Film forming apparatus and electronic device manufacturing method |
WO2022190243A1 (en) * | 2021-03-10 | 2022-09-15 | 株式会社荏原製作所 | Plating apparatus and plating method |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0627323B2 (en) * | 1983-12-26 | 1994-04-13 | 株式会社日立製作所 | Sputtering method and apparatus |
US5106474A (en) * | 1990-11-21 | 1992-04-21 | Viratec Thin Films, Inc. | Anode structures for magnetron sputtering apparatus |
JP3076367B2 (en) * | 1990-11-29 | 2000-08-14 | キヤノン株式会社 | Plasma processing equipment |
US5616225A (en) * | 1994-03-23 | 1997-04-01 | The Boc Group, Inc. | Use of multiple anodes in a magnetron for improving the uniformity of its plasma |
JPH10152772A (en) * | 1996-11-22 | 1998-06-09 | Matsushita Electric Ind Co Ltd | Sputtering method and apparatus therefor |
DE69928790T2 (en) | 1998-04-16 | 2006-08-31 | Bekaert Advanced Coatings N.V. | MEANS FOR CONTROLLING TARGET TRANSFER AND SPRAYING IN A MAGNETRON |
CN100557071C (en) | 2004-12-28 | 2009-11-04 | 株式会社爱发科 | The manufacture method of sputtering source, sputtering apparatus, film |
JP2006253275A (en) | 2005-03-09 | 2006-09-21 | Matsushita Electric Ind Co Ltd | Sputtering apparatus |
JP5059429B2 (en) * | 2007-01-26 | 2012-10-24 | 株式会社大阪真空機器製作所 | Sputtering method and sputtering apparatus |
KR20120014589A (en) | 2009-09-01 | 2012-02-17 | 도쿄엘렉트론가부시키가이샤 | Sputtering device |
JP5903217B2 (en) | 2011-03-24 | 2016-04-13 | 株式会社アルバック | Magnetron sputtering electrode and sputtering apparatus |
JP2013237913A (en) | 2012-05-16 | 2013-11-28 | Ulvac Japan Ltd | Sputtering apparatus and sputtering method |
JP2014066619A (en) | 2012-09-26 | 2014-04-17 | Hitachi High-Technologies Corp | Deposition device and deposition method |
JP6425431B2 (en) | 2014-06-30 | 2018-11-21 | 株式会社アルバック | Sputtering method |
JP6411975B2 (en) * | 2014-09-30 | 2018-10-24 | 芝浦メカトロニクス株式会社 | Film forming apparatus and film forming substrate manufacturing method |
JP6875798B2 (en) | 2016-06-24 | 2021-05-26 | 株式会社トヨタプロダクションエンジニアリング | Wear prediction device, wear prediction method, wear prediction program |
-
2018
- 2018-07-31 JP JP2018143735A patent/JP7138504B2/en active Active
- 2018-11-29 KR KR1020180151459A patent/KR102695213B1/en active IP Right Grant
-
2019
- 2019-07-02 CN CN201910586973.0A patent/CN110777338A/en active Pending
-
2022
- 2022-09-06 JP JP2022141500A patent/JP7461427B2/en active Active
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