JP2019515498A - 背面コンタクト太陽電池を結晶シリコンから製造する方法 - Google Patents
背面コンタクト太陽電池を結晶シリコンから製造する方法 Download PDFInfo
- Publication number
- JP2019515498A JP2019515498A JP2018556427A JP2018556427A JP2019515498A JP 2019515498 A JP2019515498 A JP 2019515498A JP 2018556427 A JP2018556427 A JP 2018556427A JP 2018556427 A JP2018556427 A JP 2018556427A JP 2019515498 A JP2019515498 A JP 2019515498A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- layer
- laser
- micrometers
- pitch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 title description 5
- 230000005684 electric field Effects 0.000 claims abstract description 11
- 238000000608 laser ablation Methods 0.000 claims abstract description 11
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 239000011888 foil Substances 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- 239000002243 precursor Substances 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000002048 anodisation reaction Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 87
- 235000012431 wafers Nutrition 0.000 description 35
- 239000011295 pitch Substances 0.000 description 27
- 238000009792 diffusion process Methods 0.000 description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000000873 masking effect Effects 0.000 description 9
- 239000005360 phosphosilicate glass Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 238000001459 lithography Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000002679 ablation Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
- H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
- H10F77/937—Busbar structures for modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016107802.6 | 2016-04-27 | ||
| DE102016107802.6A DE102016107802A1 (de) | 2016-04-27 | 2016-04-27 | Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium |
| PCT/EP2017/058746 WO2017186488A1 (de) | 2016-04-27 | 2017-04-12 | Verfahren zur herstellung rueckseitenkontaktierter solarzellen aus kristallinem silizium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019515498A true JP2019515498A (ja) | 2019-06-06 |
| JP2019515498A5 JP2019515498A5 (cg-RX-API-DMAC10.html) | 2020-04-09 |
Family
ID=58537004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018556427A Withdrawn JP2019515498A (ja) | 2016-04-27 | 2017-04-12 | 背面コンタクト太陽電池を結晶シリコンから製造する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20190348560A1 (cg-RX-API-DMAC10.html) |
| EP (1) | EP3449512B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JP2019515498A (cg-RX-API-DMAC10.html) |
| CN (1) | CN109314151A (cg-RX-API-DMAC10.html) |
| DE (1) | DE102016107802A1 (cg-RX-API-DMAC10.html) |
| WO (1) | WO2017186488A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2019249263A1 (en) * | 2018-04-06 | 2020-11-05 | Maxeon Solar Pte. Ltd. | Local metallization for semiconductor substrates using a laser beam |
| CN109192809B (zh) * | 2018-07-20 | 2019-10-11 | 常州大学 | 一种全背电极电池及其高效陷光和选择性掺杂制造方法 |
| RU2724142C1 (ru) * | 2019-12-17 | 2020-06-22 | Акционерное общество "ОКБ-Планета" АО "ОКБ-Планета" | Способ получения различных видов морфологии поверхности карбида кремния |
| CN114038921B (zh) * | 2021-11-05 | 2024-03-29 | 晶科能源(海宁)有限公司 | 太阳能电池及光伏组件 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004036220B4 (de) | 2004-07-26 | 2009-04-02 | Jürgen H. Werner | Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl |
| DE102004050269A1 (de) | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
| KR20080091102A (ko) | 2005-12-21 | 2008-10-09 | 선파워 코포레이션 | 배면 콘택트 태양 전지 구조 및 제조 공정 |
| WO2008080160A1 (en) * | 2006-12-22 | 2008-07-03 | Advent Solar, Inc. | Interconnect technologies for back contact solar cells and modules |
| US9455362B2 (en) * | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
| US20100294349A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
| CN101794833A (zh) * | 2010-03-03 | 2010-08-04 | 中国科学院电工研究所 | 一种背表面电介质钝化的太阳电池及其制备方法 |
| CN102208493B (zh) * | 2011-05-20 | 2012-12-19 | 上海采日光伏技术有限公司 | 一种全背电极太阳能电池的制作方法 |
| US9842949B2 (en) * | 2011-08-09 | 2017-12-12 | Ob Realty, Llc | High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers |
| WO2013109583A2 (en) * | 2012-01-16 | 2013-07-25 | Ferro Corporation | Non fire-through aluminum conductor reflector paste for back surface passivated cells with laser fired contacts |
| US9812592B2 (en) * | 2012-12-21 | 2017-11-07 | Sunpower Corporation | Metal-foil-assisted fabrication of thin-silicon solar cell |
| US9437756B2 (en) | 2013-09-27 | 2016-09-06 | Sunpower Corporation | Metallization of solar cells using metal foils |
| DE102013112638A1 (de) | 2013-11-15 | 2015-05-21 | Universität Stuttgart | Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium |
| US9722105B2 (en) * | 2014-03-28 | 2017-08-01 | Sunpower Corporation | Conversion of metal seed layer for buffer material |
| WO2016011140A1 (en) | 2014-07-15 | 2016-01-21 | Natcore Technology, Inc. | Laser-transferred ibc solar cells |
-
2016
- 2016-04-27 DE DE102016107802.6A patent/DE102016107802A1/de not_active Withdrawn
-
2017
- 2017-04-12 WO PCT/EP2017/058746 patent/WO2017186488A1/de not_active Ceased
- 2017-04-12 US US16/096,313 patent/US20190348560A1/en not_active Abandoned
- 2017-04-12 CN CN201780026081.4A patent/CN109314151A/zh active Pending
- 2017-04-12 EP EP17716901.8A patent/EP3449512B1/de active Active
- 2017-04-12 JP JP2018556427A patent/JP2019515498A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017186488A1 (de) | 2017-11-02 |
| DE102016107802A1 (de) | 2017-11-02 |
| CN109314151A (zh) | 2019-02-05 |
| EP3449512B1 (de) | 2020-01-22 |
| EP3449512A1 (de) | 2019-03-06 |
| US20190348560A1 (en) | 2019-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9768343B2 (en) | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate | |
| US8637340B2 (en) | Patterning of silicon oxide layers using pulsed laser ablation | |
| US9508886B2 (en) | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam | |
| US9455362B2 (en) | Laser irradiation aluminum doping for monocrystalline silicon substrates | |
| CN102439735B (zh) | 通过局部激光辅助转变太阳能电池中的功能膜得到的局部金属接触 | |
| CN108777263B (zh) | 太阳能电池 | |
| KR101384853B1 (ko) | 광기전 태양 전지의 레이저 가공 방법 | |
| EP3029738B1 (en) | Method for manufacturing a solar cell | |
| US20120225515A1 (en) | Laser doping techniques for high-efficiency crystalline semiconductor solar cells | |
| US20130130430A1 (en) | Spatially selective laser annealing applications in high-efficiency solar cells | |
| AU2021393000B2 (en) | Back-contact solar cell, and production thereof | |
| US20130164883A1 (en) | Laser annealing applications in high-efficiency solar cells | |
| CN101523615A (zh) | 光伏电池及制造该光伏电池的方法 | |
| KR101289787B1 (ko) | 고효율 박형 결정질 실리콘 태양전지 제조를 위한 레이저 가공방법 | |
| US20170005206A1 (en) | Patterning of silicon oxide layers using pulsed laser ablation | |
| EP2819181A1 (en) | Laser annealing applications in high-efficiency solar cells | |
| WO2015071217A1 (de) | Verfahren zur herstellung rückseitenkontaktierter solarzellen aus kristallinem silizium | |
| KR101370126B1 (ko) | 탑햇 형태의 레이저 어닐링을 이용한 태양전지의 선택적에미터 형성방법 및 이를 이용한 태양전지의 제조방법 | |
| US20190348560A1 (en) | Method for producing rear surface contact solar cells from crystalline silicon | |
| KR101532721B1 (ko) | 고효율 태양 전지의 공간 선택적 레이저 어닐링 적용 | |
| RU2815034C1 (ru) | Контактирующий задней стороной солнечный элемент и изготовление такого элемента | |
| US8466447B2 (en) | Back contact to film silicon on metal for photovoltaic cells | |
| CN119562652A (zh) | 一种太阳电池及其制备方法、光伏组件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A529 | Written submission of copy of amendment under article 34 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A529 Effective date: 20181120 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200226 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200226 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20200527 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20200528 |