JP2019502273A5 - - Google Patents
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- Publication number
- JP2019502273A5 JP2019502273A5 JP2018549432A JP2018549432A JP2019502273A5 JP 2019502273 A5 JP2019502273 A5 JP 2019502273A5 JP 2018549432 A JP2018549432 A JP 2018549432A JP 2018549432 A JP2018549432 A JP 2018549432A JP 2019502273 A5 JP2019502273 A5 JP 2019502273A5
- Authority
- JP
- Japan
- Prior art keywords
- nanocolumns
- sub
- pit
- center
- nanocolumn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000002131 composite material Substances 0.000 claims 1
- 230000000977 initiatory Effects 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 230000001737 promoting Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Claims (1)
前記ピット内で複数のサブナノカラム核形成を開始するステップ;及び
前記ピットの中心に向かう複数のサブナノカラムの成長を促進するステップであって、前記サブナノカラムは前記中心において合体して単一のナノカラムを形成する、ステップ
を含む、複合体ナノカラムを成長させる方法。 Forming pits on the surface of the substrate;
Initiating nucleation of a plurality of sub-nanocolumns within the pit; and promoting growth of the plurality of sub-nanocolumns toward a center of the pit, wherein the sub-nanocolumns coalesce at the center to form a single nanocolumn. Forming a composite nanocolumn.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562267117P | 2015-12-14 | 2015-12-14 | |
US62/267,117 | 2015-12-14 | ||
US15/377,775 US11322652B2 (en) | 2015-12-14 | 2016-12-13 | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
US15/377,775 | 2016-12-13 | ||
PCT/US2016/066729 WO2017106387A1 (en) | 2015-12-14 | 2016-12-14 | METHODS FOR PRODUCING COMPOSITE GaN NANOCOLUMNS AND LIGHT EMITTING STRUCTURES MADE FROM THE METHODS |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019502273A JP2019502273A (en) | 2019-01-24 |
JP2019502273A5 true JP2019502273A5 (en) | 2020-01-30 |
JP6947746B2 JP6947746B2 (en) | 2021-10-13 |
Family
ID=59020145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018549432A Active JP6947746B2 (en) | 2015-12-14 | 2016-12-14 | Manufacturing method of composite GaN nanocolumn |
Country Status (6)
Country | Link |
---|---|
US (1) | US11322652B2 (en) |
JP (1) | JP6947746B2 (en) |
KR (1) | KR20180095608A (en) |
CN (1) | CN108604538A (en) |
TW (1) | TWI740865B (en) |
WO (1) | WO2017106387A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11322652B2 (en) * | 2015-12-14 | 2022-05-03 | Ostendo Technologies, Inc. | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
CN109148654B (en) * | 2018-08-30 | 2020-04-07 | 芜湖德豪润达光电科技有限公司 | Non-polar plane III-group nitride epitaxial structure and preparation method thereof |
US10854646B2 (en) * | 2018-10-19 | 2020-12-01 | Attollo Engineering, LLC | PIN photodetector |
KR20210136967A (en) * | 2019-03-12 | 2021-11-17 | 가부시키가이샤 알박 | vacuum deposition apparatus |
US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
CN110993755B (en) * | 2019-12-18 | 2021-09-21 | 天津工业大学 | Electro-injection three-dimensional GaN core-shell structure Nano-LED and manufacturing method thereof |
CN116705889B (en) * | 2023-06-28 | 2024-02-27 | 北京科技大学 | Van der Waals heterojunction photoelectric detector regulated by gradient strain and preparation method thereof |
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AU2003223563A1 (en) * | 2002-04-15 | 2003-11-03 | The Regents Of The University Of California | NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
KR20060127743A (en) * | 2005-06-06 | 2006-12-13 | 스미토모덴키고교가부시키가이샤 | Nitride semiconductor substrate and method for manufacturing the same |
JP2007048869A (en) * | 2005-08-09 | 2007-02-22 | Sony Corp | METHOD FOR MANUFACTURING GaN SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
CA2643439C (en) | 2006-03-10 | 2015-09-08 | Stc.Unm | Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices |
CN101443887B (en) * | 2006-03-10 | 2011-04-20 | Stc.Unm公司 | Pulsed growth of GAN nanowires and applications in group III nitride semiconductor substrate materials and devices |
JP5082752B2 (en) * | 2006-12-21 | 2012-11-28 | 日亜化学工業株式会社 | Manufacturing method of substrate for semiconductor light emitting device and semiconductor light emitting device using the same |
US8964020B2 (en) * | 2007-04-25 | 2015-02-24 | Stc.Unm | Solid-state microscope for selectively imaging a sample |
US8652947B2 (en) * | 2007-09-26 | 2014-02-18 | Wang Nang Wang | Non-polar III-V nitride semiconductor and growth method |
US7745315B1 (en) | 2007-10-03 | 2010-06-29 | Sandia Corporation | Highly aligned vertical GaN nanowires using submonolayer metal catalysts |
US8188513B2 (en) * | 2007-10-04 | 2012-05-29 | Stc.Unm | Nanowire and larger GaN based HEMTS |
CN101685774B (en) * | 2008-09-24 | 2012-06-13 | 北京邮电大学 | Heteroepitaxial growth process based on interface nano-structure |
US8338818B1 (en) * | 2008-12-19 | 2012-12-25 | Stc.Unm | Nanowires, nanowire networks and methods for their formation and use |
KR20100093872A (en) * | 2009-02-17 | 2010-08-26 | 삼성엘이디 주식회사 | Nitride semiconductor light emitting device and manufacturing method thereof |
CN103098216A (en) * | 2010-06-24 | 2013-05-08 | Glo公司 | Substrate with buffer layer for oriented nanowire growth |
US8409892B2 (en) * | 2011-04-14 | 2013-04-02 | Opto Tech Corporation | Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates |
US9080980B2 (en) * | 2011-07-27 | 2015-07-14 | Hewlett-Packard Development Company, L.P. | Surface enhanced raman spectroscopy employing a nanorod in a surface indentation |
CN103531447B (en) * | 2012-07-06 | 2016-03-16 | 中国科学院金属研究所 | A kind of method reducing defect density of gallium nitride nanowire array crystal |
EP2912699B1 (en) * | 2012-10-26 | 2019-12-18 | Glo Ab | Method for modifying selected portions of nanowire sized opto-electronic structure |
US11502219B2 (en) | 2013-03-14 | 2022-11-15 | The Royal Institution For The Advancement Of Learning/Mcgill University | Methods and devices for solid state nanowire devices |
KR102070209B1 (en) * | 2013-07-01 | 2020-01-28 | 엘지전자 주식회사 | A growth substrate and a light emitting device |
US9171843B2 (en) | 2013-08-02 | 2015-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and fabricating the same |
US9053890B2 (en) * | 2013-08-02 | 2015-06-09 | University Health Network | Nanostructure field emission cathode structure and method for making |
JP6409063B2 (en) | 2013-12-17 | 2018-10-17 | グロ アーベーGlo Ab | III-nitride nanowire LED having strain-corrected surface active region and method of manufacturing the same |
KR102140741B1 (en) * | 2014-02-18 | 2020-08-03 | 엘지전자 주식회사 | Non-polar substrate having hetero-structure and method for manufacturing the same, nitride semiconductor light emitting device using the same |
FR3019188B1 (en) * | 2014-03-27 | 2017-11-24 | Commissariat Energie Atomique | METHOD OF GROWING AN ELONGATED MEMBER FROM A GERME FORMED IN A HOLLOW OF A LAYER OR PLATE OF NUCLEATION |
US9773889B2 (en) * | 2014-07-18 | 2017-09-26 | Taiwan Semiconductor Manufacturing Company Limited | Method of semiconductor arrangement formation |
US11322652B2 (en) * | 2015-12-14 | 2022-05-03 | Ostendo Technologies, Inc. | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
-
2016
- 2016-12-13 US US15/377,775 patent/US11322652B2/en active Active
- 2016-12-14 KR KR1020187020188A patent/KR20180095608A/en not_active Application Discontinuation
- 2016-12-14 TW TW105141477A patent/TWI740865B/en not_active IP Right Cessation
- 2016-12-14 CN CN201680081684.XA patent/CN108604538A/en active Pending
- 2016-12-14 WO PCT/US2016/066729 patent/WO2017106387A1/en active Application Filing
- 2016-12-14 JP JP2018549432A patent/JP6947746B2/en active Active
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