JP2019216193A5

JP2019216193A5 -

Info

Publication number: JP2019216193A5
Application number: JP2018112904A
Authority: JP
Filing date: 2018-06-13
Publication date: 2021-02-25
Anticipated expiration: 2038-06-13

Description

第３態様は、第２態様の半導体検査装置であって、前記第１電極は透明性を有する透明性電極を有しており、前記光照射部は、前記透明性電極に前記光を照射する。 The third aspect is the semiconductor inspection apparatus of the second aspect, wherein the first electrode has a transparent electrode having transparency, and the light irradiation unit irradiates the transparent electrode with the light. ..

第８態様は、第１態様から第７態様のいずれか１つの半導体検査装置であって、前記対象半導体試料の主面に対して前記光の照射位置を相対的に変更する照射位置変更部と、前記対象半導体試料における、前記変化量の分布を示す変化量分布画像を生成する画像生成部とをさらに備える。 Eighth aspect, the first embodiment be any one of a semiconductor inspection device of the seventh aspect, the irradiation position changing part for relatively changing the irradiation position of the light to the main surface of the front Symbol target semiconductor sample When, further comprising in said subject semiconductor sample, and an image generating unit that generates a variation distribution image showing the distribution of the amount of change.

第９態様は、第１態様から第８態様のいずれか１つの半導体検査装置であって、前記光照射部が前記対象半導体試料に照射する前記光の波長領域を、前記第１波長領域とは異なる第２波長領域に変更する波長領域変更部をさらに備える。 The ninth aspect is the semiconductor inspection apparatus according to any one of the first to eighth aspects, and the wavelength region of the light that the light irradiation unit irradiates the target semiconductor sample is referred to as the first wavelength region. Further, a wavelength region changing unit for changing to a different second wavelength region is provided.

半導体試料９に照射される検査光ＬＰ１０の波長は、ゲート電極９４を透過して、絶縁層９２および半導体層９０間の界面９８に到達する波長とされる。また、検査光ＬＰ１０の光子エネルギーは、半導体試料９の半導体層９０のバンドギャップ近傍以上のエネルギーとされる。 The wavelength of the inspection light LP10 irradiated to the semiconductor sample 9 is a wavelength that passes through the gate electrode 94 and reaches the interface 98 between the insulating layer 92 and the semiconductor layer 90. Further, the photon energy of the inspection light LP10 is set to be energy equal to or higher than the vicinity of the band gap of the semiconductor layer 90 of the semiconductor sample 9.

＜電圧印加部４０＞
電圧印加部４０は、プローブピン４２と、電圧可変電源４４とを備える。電圧印加部４０は、半導体試料９のゲート電極９４に対してプローブピン４２を介して電気的に接続可能であり、裏面電極９６に対してステージ３０に設けられた導電性の電極部材（不図示）を介して電気的に接続可能である。電圧可変電源４４は、プローブピン４２およびステージ３０に設けられた電極部材を介して、ゲート電極９４および裏面電極９６間に所定の電圧（以下、「ゲート電圧」とも称する。）を印加する。電圧可変電源４４が印加するゲート電圧は、制御部５０からの制御指令に応じて変更可能とされている。

<Voltage application unit 40>
The voltage application unit 40 includes a probe pin 42 and a voltage variable power supply 44. The voltage application unit 40 can be electrically connected to the gate electrode 94 of the semiconductor sample 9 via the probe pin 42, and is a conductive electrode member (not shown) provided on the stage 30 with respect to the back surface electrode 96. ) Can be electrically connected. The variable voltage power supply 44 applies a predetermined voltage (hereinafter, also referred to as “gate voltage”) between the gate electrode 94 and the back surface electrode 96 via the electrode members provided on the probe pin 42 and the stage 30. The gate voltage applied by the variable voltage power supply 44 can be changed according to a control command from the control unit 50.

Claims

A semiconductor inspection device that inspects a semiconductor sample having an interface between an insulating layer and a semiconductor layer.
A holding unit for holding the semiconductor sample and
A voltage application unit that switches and applies different voltages between the insulating layer and the semiconductor layers of the target semiconductor sample, which is the semiconductor sample held in the holding unit, and
A light irradiation unit that irradiates the target semiconductor sample with light in the first wavelength region,
An electromagnetic wave detection unit that detects the electromagnetic wave intensity, which is the intensity of the electromagnetic wave radiated in response to the irradiation of the light, from the target semiconductor sample to which each of the different voltages is applied.
A change amount information generation unit that generates change amount information which is information indicating the change amount of the electromagnetic wave intensity from each of the electromagnetic wave intensities corresponding to the different voltages.
A semiconductor inspection device.

The semiconductor inspection apparatus according to claim 1.
The target semiconductor sample has a first electrode, an insulating layer, a semiconductor layer, and a second electrode in this order.
The voltage application unit is a semiconductor inspection device that is electrically connected to the first electrode and the second electrode and applies a voltage between them.

The semiconductor inspection apparatus according to claim 2.
The first electrode has a transparent electrode having transparency, and has a transparent electrode.
The light irradiation unit is a semiconductor inspection device that irradiates the transparent electrode with the light.

The semiconductor inspection apparatus according to any one of claims 1 to 3.
The semiconductor inspection apparatus includes information indicating the change amount ratio, which is the ratio of the change amount of each of the electromagnetic wave intensities to the change amount of the different voltage.

The semiconductor inspection apparatus according to claim 4.
A determination unit that determines the quality of the target semiconductor sample based on the comparison between the change rate and the reference value.
A semiconductor inspection device further equipped with.

The semiconductor inspection apparatus according to claim 5.
Reference value setting unit for setting the reference value,
A semiconductor inspection device further equipped with.

The semiconductor inspection apparatus according to claim 6.
A storage unit that stores a non-defective product change amount ratio, which is the change amount ratio indicating a non-defective product, and a defective product change amount ratio, which is the change amount ratio indicating a defective product.
With more
The reference value setting unit is a semiconductor inspection device that accepts a change in the setting of the reference value between the non-defective product change amount ratio and the defective product change amount ratio.

The semiconductor inspection apparatus according to any one of claims 1 to 7 .
An irradiation position changing unit to change the relative irradiation position of the light to the main surface of the front Symbol target semiconductor sample,
An image generation unit that generates a change distribution image showing the distribution of the change in the target semiconductor sample.
A semiconductor inspection device further equipped with.

The semiconductor inspection apparatus according to any one of claims 1 to 8.
A wavelength region changing unit that changes the wavelength region of the light that the light irradiating unit irradiates the target semiconductor sample to a second wavelength region different from the first wavelength region.
A semiconductor inspection device further equipped with.

A semiconductor inspection method for inspecting a semiconductor sample having an interface between an insulating layer and a semiconductor layer.
(A) A holding step for holding the semiconductor sample and
(B) A voltage application step of switching and applying different voltages between the insulating layer and the semiconductor layers of the target semiconductor sample, which is the semiconductor sample held in the holding step.
(C) Electromagnetic wave intensity, which is the intensity of electromagnetic waves radiated from the target semiconductor sample by irradiating the target semiconductor sample with light in the first wavelength region while each of the different voltages is applied to the target semiconductor sample. Electromagnetic wave detection process to detect each and
(D) A change amount information generation step of generating change amount information which is information indicating the change amount of the electromagnetic wave intensity from each of the electromagnetic wave intensities corresponding to the different voltages.
Semiconductor inspection methods, including.

The semiconductor inspection method of claim 10.
The semiconductor inspection method includes information indicating the change amount ratio, which is the ratio of the variable amount of each of the electromagnetic wave intensities to the change amount of the different voltage.