JP2019212755A - Stiffener and electronic device - Google Patents

Abstract

To realize a high-performance electronic device using a stiffener.SOLUTION: A stiffener 50 includes a substrate 51 having a connecting portion 50a to which a heat sink 40 is connected, an insulating layer 52 provided on the substrate 51, and a capacitor 53 provided in the insulating layer 52. The capacitor 53 includes a dielectric layer and an electrode layer provided on the front and back surfaces of the dielectric layer. The stiffener 50 is connected to the heat sink 40 arranged with a circuit board 10 on which a semiconductor device 20 is mounted therebetween by the connecting portion 50a, and the electrode layer of the capacitor 53 is electrically connected to the circuit board 10.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a stiffener and an electronic device.

  As an electronic apparatus using a semiconductor device, for example, an apparatus using a structure in which an interposer substrate on which an LSI (Large Scale Integration) chip package is mounted is sandwiched between a heat sink and a printed board is known. In this structure, for example, a spring-loaded bolt is penetrated from the heat sink to the back surface of the printed circuit board, and the tip is screwed to a nut on the back surface of the printed circuit board, thereby connecting the heat sink and the printed circuit board.

  In addition, regarding an electronic apparatus using a semiconductor device, a technique of incorporating a thin film capacitor (TFC) in a semiconductor package substrate is known from the viewpoint of power supply stabilization and the like.

International Publication No. 2008/117421 Pamphlet

“Development of semiconductor package substrate with built-in thin film capacitor”, [online], Fujitsu Interconnect Technologies, Ltd., May 23, 2016, [March 19, 2018 search], Internet <URL: http: // www.fujitsu.com/jp/group/fict/resources/news/press-releases/2016/0523/r20160523.html>

  The heat sink is provided on, for example, a semiconductor device that generates heat, and suppresses overheating. In order to stably fix the heat sink, for example, a flat stiffener may be provided on the back surface of the circuit board on which the semiconductor device is mounted on the front surface. On the other hand, from the viewpoint of improving performance, a capacitor may be mounted on the back surface of the circuit board on which the semiconductor device is mounted on the front surface. However, if a plate-like stiffener is provided on the back surface of the circuit board, the location of the capacitor is limited, and sufficient performance improvement may not be achieved.

In one aspect, an object of the present invention is to realize a stiffener capable of obtaining a high-performance electronic device.
In one aspect, an object of the present invention is to realize a high-performance electronic device using a stiffener.

  In one aspect, a substrate having a connecting portion to which a heat sink is connected, an insulating layer provided on the substrate, a dielectric layer provided in the insulating layer, and a first surface of the dielectric layer A stiffener is provided that includes a capacitor having a first electrode layer provided and a second electrode layer provided on a second surface opposite to the first surface of the dielectric layer.

  Also, in one aspect, a circuit board, a semiconductor device mounted on the circuit board, a heat sink provided on the semiconductor device and thermally connected to the semiconductor device, and under the circuit board, A stiffener provided in a region facing the semiconductor device and connected to the heat sink; the stiffener having a connecting portion to which the heat sink is connected; and a surface of the substrate facing the circuit board An insulating layer provided thereon; a dielectric layer provided in the insulating layer; a first electrode layer provided on a first surface of the dielectric layer and electrically connected to the circuit board; There is provided an electronic device including a capacitor having a second electrode layer provided on a second surface opposite to the first surface of a dielectric layer and electrically connected to the circuit board.

In one aspect, a stiffener capable of obtaining a high performance electronic device is realized.
In one aspect, a high-performance electronic device using a stiffener is realized.

It is a figure which shows the 1st example of an electronic device. It is a figure which shows the 2nd example of an electronic device. It is FIG. (1) which shows an example of the electronic device which concerns on 1st Embodiment. FIG. 3 is a second diagram illustrating an example of an electronic device according to the first embodiment; It is a figure which shows the structural example of the connection part of the stiffener which concerns on 1st Embodiment. It is a figure which shows an example of the stiffener which concerns on 1st Embodiment. It is FIG. (1) which shows the 1st example of the formation method of the stiffener which concerns on 1st Embodiment. It is FIG. (2) which shows the 1st example of the formation method of the stiffener which concerns on 1st Embodiment. It is FIG. (The 3) which shows the 1st example of the formation method of the stiffener which concerns on 1st Embodiment. It is FIG. (4) which shows the 1st example of the formation method of the stiffener which concerns on 1st Embodiment. It is FIG. (1) which shows the 2nd example of the formation method of the stiffener which concerns on 1st Embodiment. It is FIG. (2) which shows the 2nd example of the formation method of the stiffener which concerns on 1st Embodiment. It is a figure which shows the 1st example of the assembly method of the electronic device which concerns on 1st Embodiment. It is a figure which shows the 2nd example of the assembly method of the electronic device which concerns on 1st Embodiment. It is a figure which shows an example of the connection of the stiffener which concerns on 1st Embodiment, and a circuit board. It is a figure which shows the modification of the connection of the stiffener which concerns on 1st Embodiment, and a circuit board. It is a figure which shows an example of the electronic device which concerns on 2nd Embodiment. It is a figure which shows an example of the assembly method of the electronic device which concerns on 2nd Embodiment. It is a figure explaining the electronic device which concerns on 3rd Embodiment.

First, an example of an electronic device using a stiffener will be described.
FIG. 1 is a diagram illustrating a first example of an electronic device. FIG. 1A schematically illustrates a cross-sectional view of main parts of an example of an electronic device using a stiffener. FIG. 1B schematically shows a plan view of the main part of an example of the electronic device viewed from the stiffener side.

  An electronic device 100A illustrated in FIGS. 1A and 1B includes a circuit board 110, a semiconductor device 120, a lid (or heat spreader) 130, a heat sink 140, a stiffener 150A, a rod 160, and a capacitor 170. The electronic device 100A may be referred to as a motherboard.

  For example, a printed circuit board is used as the circuit board 110. The circuit board 110 is used for various purposes such as a mother board, a daughter board, and an interposer. On one surface (front surface) 110a and the other surface (back surface) 110b of the circuit board 110, and inside, a conductor pattern (wiring, via, terminal, etc.) not shown is provided. In the electronic device 100 </ b> A, the semiconductor device 120 and the capacitor 170 are electrically connected to a conductor pattern provided on the circuit board 110.

  As shown in FIG. 1A, the semiconductor device 120 includes a package substrate 121 and a semiconductor chip 122 mounted on one surface (front surface) 121a of the package substrate 121 using bumps 123 such as a plurality of solder balls. . An underfill 126 is filled between the package substrate 121 and the semiconductor chip 122. In addition to the semiconductor chip 122, an electronic component 125 such as a chip capacitor may be mounted on the surface 121 a of the package substrate 121. The semiconductor device 120 is mounted on the front surface 110 a of the circuit board 110 using a plurality of bumps 124 such as solder balls provided on the other surface (back surface) 121 b of the package substrate 121, and is electrically connected to the conductor pattern of the circuit board 110. Connected to.

In addition to the semiconductor device 120, various electronic components such as other semiconductor devices, semiconductor chips, and chip components may be mounted on the surface 110a of the circuit board 110.
As shown in FIG. 1A, the lid 130 is provided on the package substrate 121 so as to cover the semiconductor chip 122 mounted on the surface 121a of the package substrate 121 of the semiconductor device 120. The lid 130 is bonded to the surface 121 a of the package substrate 121 using an adhesive 180. A thermal interface material (TIM) 190 such as a thermal sheet, thermal grease, or conductive paste is interposed between the semiconductor chip 122 and the inner surface of the lid 130. The lid 130 is made of a material having good thermal conductivity such as copper (Cu) or aluminum (Al). The lid 130 is thermally connected to the semiconductor device 120 via the TIM 190.

  The heat sink 140 is provided on the lid 130 as shown in FIG. A TIM may be provided between the heat sink 140 and the lid 130. As shown in FIG. 1A, a relatively large heat sink 140 having a planar size including the semiconductor device 120 and the lid 130 is used for the electronic apparatus 100A. As shown in FIG. 1A, the heat sink 140 is provided with a plurality of fins 141, for example, fins 141 having various shapes such as a needle shape, a plate shape, and a corrugated plate shape. The heat sink 140 is made of a material having good thermal conductivity such as copper or aluminum. The heat sink 140 is thermally connected to the semiconductor device 120 via the TIM 190 and the lid 130 (and the TIM if a TIM is provided between the lid 130).

  The stiffener 150A is provided on the back surface 110b of the circuit board 110 as shown in FIGS. 1 (A) and 1 (B). A material having a certain rigidity is used for the stiffener 150A. For example, the stiffener 150A is made of a material having higher rigidity than the circuit board 110, such as stainless steel (SUS), copper, or aluminum. As shown in FIG. 1A and FIG. 1B, the electronic apparatus 100A has a planar size that includes the semiconductor device 120 (the mounting region) mounted on the surface 110a of the circuit board 110. A large plate-shaped stiffener 150A is used.

  As shown in FIG. 1A, the rod 160 connects the heat sink 140 and the stiffener 150A. The rod 160, for example, penetrates the heat sink 140 and the circuit board 110, and one end is locked to the heat sink 140 as shown in FIG. 1A, and the other end is shown in FIGS. 1A and 1B. As shown in FIG. 5, the connecting portion 150a provided at the corner portion of the stiffener 150A is fixed by means such as screwing or fitting.

  A plurality of capacitors 170 are mounted on the back surface 110b of the circuit board 110 as shown in FIGS. 1 (A) and 1 (B). For example, a chip capacitor is used as the capacitor 170. Capacitors 170 are mounted on the back surface 110b of the circuit board 110 outside the stiffener 150A, arranged vertically and horizontally, and electrically connected to the conductor pattern of the circuit board 110. The capacitor 170 is provided so as to function as a bypass capacitor (decoupling capacitor), for example.

  For example, in the electronic device 100A, a capacitor 170 is mounted on the back surface 110b of the circuit board 110 as shown in FIGS. 1A and 1B from the viewpoint of PI (Power Integrity) such as reduction of power supply noise. The On the other hand, in order to stably fix the heat sink 140 that suppresses overheating of the semiconductor device 120, a relatively large flat stiffener 150A is provided on the back surface 110b of the circuit board 110.

  When such a relatively large plate-shaped stiffener 150A is used, the heat sink 140 can be compared with the case where the rod 160 is connected to a relatively small member such as a nut on the back surface 110b of the circuit board 110, respectively. It can be fixed stably. Further, when a relatively small member such as a nut is used, a shearing force is generated in the circuit board 110 and the semiconductor device 120 sandwiched between the members and the heat sink 140 due to the difference in planar size. When such a shearing force is generated, there is a risk that damage such as cracks and breaks may occur in the bumps 123 and 124. On the other hand, when a relatively large flat stiffener 150A is used, the shearing force generated in the circuit board 110 and the semiconductor device 120 sandwiched between the stiffener 150A and the heat sink 140 can be suppressed. Thereby, damage to the bump 123 group and the bump 124 group can be suppressed.

  However, when the relatively large flat stiffener 150A is provided on the back surface 110b of the circuit board 110, the capacitor 170 provided for improving the performance of the electronic device 100A must be disposed outside the stiffener 150A. Therefore, the distance between the capacitor 170 and the semiconductor device 120 is increased. When the distance between the capacitor 170 and the semiconductor device 120 is increased, for example, when the capacitor 170 is provided as a bypass capacitor, the influence of the inductance component increases, and power supply noise cannot be sufficiently reduced. As described above, in the electronic device 100A, since the relatively large flat stiffener 150A is provided on the back surface 110b of the circuit board 110, the capacitor 170 may not be able to improve the performance sufficiently.

  FIG. 2 is a diagram illustrating a second example of the electronic apparatus. FIG. 2A schematically illustrates a cross-sectional view of a main part of an example of an electronic device using a stiffener. FIG. 2B schematically shows a plan view of a main part of an example of the electronic device viewed from the stiffener side.

  The electronic device 100B shown in FIGS. 2A and 2B includes a planar square-shaped stiffener 150B having an opening 151 in a region facing the semiconductor device 120 mounted on the surface 110a of the circuit board 110. The circuit board 110 has a configuration provided on the back surface 110b. The heat sink 140 is connected to the stiffener 150B by a rod 160 that is fixed to the connecting portion 150b provided at the corner of the flat square shaped stiffener 150B by means such as screwing or fitting. The electronic device 100B of the second example is different from the electronic device 100A of the first example in that it has such a configuration. The electronic device 100B may be referred to as a motherboard.

  In the electronic device 100 </ b> B, the capacitor 170 is provided in a region in the opening 151 of the stiffener 150 </ b> B immediately below the semiconductor device 120 by providing the flat bottomed stiffener 150 </ b> B on the back surface 110 b of the circuit board 110. it can. In the electronic device 100 </ b> B, the capacitor 170 can be provided immediately below the semiconductor device 120, so that a long distance between the capacitor 170 and the semiconductor device 120 can be suppressed. Therefore, for example, when the capacitor 170 is provided as a bypass capacitor, the effect of reducing power supply noise by the capacitor 170 can be enhanced.

  However, in the electronic device 100B, the thickness of the stiffener 150B is relatively small so that the flat stiffener 150B has a certain rigidity, for example, the same rigidity as the flat stiffener 150A having no opening 151. It may be necessary to increase the thickness. When the stiffener 150B is thick, when the electronic device 100B is mounted on another electronic device, a space that does not interfere with the case, rack, slot, and the like of the electronic device and the stiffener 150B must be secured. Therefore, the arrangement and number of electronic devices 100B mounted on the electronic device may be limited, or the electronic device mounting the electronic device 100B may increase in size.

  Further, in the case where the flat square shaped stiffener 150B is used, when the heat sink 140 is fixed, a force F as shown by a thick arrow in FIG. 2A acts between the stiffener 150B and the heat sink 140. That is, the circuit board 110 and the semiconductor that are sandwiched between the stiffener 150B and the heat sink 140, as in the case where the rod 160 is connected to a relatively small member such as a nut on the back surface 110b of the circuit board 110, respectively. A shear force is generated in the device 120. As a result, the bumps 123 and the bumps 124 may be damaged such as cracks and breaks.

In view of the above points, the following configuration is adopted here as an embodiment.
[First Embodiment]
3 and 4 are diagrams illustrating an example of the electronic apparatus according to the first embodiment. FIG. 3 is a schematic cross-sectional view of a main part of an example of an electronic device using a stiffener. FIG. 4 schematically shows a plan view of the main part of an example of the electronic device viewed from the stiffener side.

  The electronic device 1 shown in FIGS. 3 and 4 includes a circuit board 10, a semiconductor device 20, a lid (or heat spreader) 30, a heat sink 40, a stiffener 50, and a rod 60. The electronic device 1 may be referred to as a mother board.

  As the circuit board 10, for example, a printed board is used. The circuit board 10 is used for various purposes such as a mother board, a daughter board, and an interposer. On one surface (front surface) 10a and the other surface (back surface) 10b of the circuit board 10 and inside thereof, a conductor pattern (wiring, via, terminal, etc.) (not shown) is provided. The semiconductor device 20 is electrically connected to the conductor pattern provided on the circuit board 10.

  As shown in FIG. 3, the semiconductor device 20 includes a package substrate 21 and a semiconductor chip 22 mounted on one surface (front surface) 21 a of the package substrate 21 using bumps 23 such as a plurality of solder balls. An underfill 26 is filled between the package substrate 21 and the semiconductor chip 22. In addition to the semiconductor chip 22, electronic components 25 such as resistors, capacitors, and inductors may be mounted on the surface 21 a of the package substrate 21. The semiconductor device 20 is mounted on the front surface 10 a of the circuit board 10 using a plurality of bumps 24 such as solder balls provided on the other surface (back surface) 21 b of the package substrate 21, and is electrically connected to the conductor pattern of the circuit board 10. Connected to. Various electronic components such as other semiconductor devices, semiconductor chips, and chip components may be mounted on the surface 10 a of the circuit board 10 together with the semiconductor device 20. For example, an ASIC (Application Specific Integrated Circuit) is used for the semiconductor device 20.

  As shown in FIG. 3, the lid 30 is provided on the package substrate 21 so as to cover the semiconductor chip 22 mounted on the surface 21 a of the package substrate 21 of the semiconductor device 20. The lid 30 is bonded to the surface 21 a of the package substrate 21 using an adhesive 80. A TIM 90 such as a thermal sheet, thermal grease, or conductive paste is interposed between the semiconductor chip 22 and the inner surface of the lid 30. The lid 30 is made of a material having good thermal conductivity such as copper or aluminum. The lid 30 is thermally connected to the semiconductor device 20 via the TIM 90.

  As shown in FIG. 3, the heat sink 40 is provided on the lid 30. A TIM may be provided between the heat sink 40 and the lid 30. As shown in FIG. 3, the electronic apparatus 1 uses a heat sink 40 having a planar size that includes the semiconductor device 20 and the lid 30. As shown in FIG. 3, the heat sink 40 is provided with a plurality of fins 41, for example, fins 41 having various shapes such as a needle shape, a plate shape, and a corrugated plate shape. A flat plate having no fins 41 may be used as the heat sink 40. The heat sink 40 is made of a material having good thermal conductivity such as copper or aluminum. The heat sink 40 is thermally connected to the semiconductor device 20 via the TIM 90 and the lid 30 (and the TIM if a TIM is provided between the lid 30).

As shown in FIGS. 3 and 4, the stiffener 50 is provided on the back surface 10 b of the circuit board 10. Details of the stiffener 50 will be described later.
As shown in FIG. 3, the rod 60 connects the heat sink 40 and the stiffener 50. For example, the rod 60 penetrates the heat sink 40 and the circuit board 10, one end is locked to the heat sink 40 as shown in FIG. 3, and the other end (tip) is stiffener as shown in FIGS. 3 and 4. It is fixed to a connecting portion 50a provided at the corner portion of 50 by means such as screwing or fitting. The rod 60 penetrates the circuit board 10, one end is connected to the heat sink 40, the other end is connected to the stiffener 50, and the heat sink 40 and the stiffener 50 can be connected to hold the state. Good. The connection between the rod 60 and the heat sink 40 and the stiffener 50 is not limited to the above-described locking, or means such as screwing or fitting.

For example, the connecting portion 50a of the stiffener 50 to which the rod 60 is screwed can be configured as shown in FIG.
FIG. 5 is a diagram showing a configuration example of the stiffener connection portion according to the first embodiment. FIG. 5A schematically shows a cross-sectional view of the main part of an example of a stiffener, and FIG. 5B schematically shows a plan view of the main part of an example of a stiffener. FIG. 5A is an enlarged cross-sectional view of the stiffener at the portion X in FIG. 3, and is a cross-sectional view taken along line L5-L5 in FIG.

  For example, when a bolt is used as the rod 60, the connecting portion 50a of the stiffener 50 is provided with a hole 50aa into which the tip of the rod 60 (bolt) is screwed, as shown in FIG. In this case, the hole 50aa of the stiffener 50 and the tip of the rod 60 are provided with corresponding threads and screw grooves, and the tip of the rod 60 is screwed into the hole 50aa, so that the rod 60 is attached to the stiffener 50. Fixed. The tip of the rod 60 whose one end is locked to the heat sink 40 is screwed into the hole 50aa of the stiffener 50, whereby the heat sink 40 and the stiffener 50 are connected by the rod 60.

  The rod 60 may be a so-called bolt with a spring in which a spring is provided so as to be interposed between the rod 60 and the heat sink 40 that locks the rod 60 at one end. By using a bolt with a spring for the rod 60, when screwing into the hole 50aa, the heat sink 40 is biased by the spring and pressed against the stiffener 50, and excessive tightening of the heat sink 40 to the stiffener 50 is suppressed. It is done.

Next, the stiffener 50 used in the electronic device 1 will be described in more detail with reference to FIGS. 3 to 5 and the next FIG.
FIG. 6 is a diagram illustrating an example of a stiffener according to the first embodiment. FIG. 6 schematically shows a cross-sectional view of the main part of an example of the stiffener.

  As shown in FIG. 6 (and FIGS. 3 to 5 above), the stiffener 50 of the electronic device 1 includes a substrate 51, an insulating layer 52 provided on the substrate 51, and a capacitor 53 provided in the insulating layer 52. And have.

  As the substrate 51, a flat substrate having a certain rigidity is used. For example, a substrate having higher rigidity than the circuit substrate 10 such as stainless steel, copper, or aluminum is used for the substrate 51. As shown in FIGS. 3 and 4, the electronic device 1 uses a flat substrate 51 having a planar size that includes the semiconductor device 20 (the mounting region) mounted on the surface 10 a of the circuit substrate 10. It is done.

  The insulating layer 52 includes an insulating film 52 b that covers the upper side of the capacitor 53 and an insulating film 52 c that covers the lower side of the capacitor 53. Various insulating materials are used for the insulating layer 52. For example, the insulating layer 52 is made of a resin material such as an epoxy resin, a polyimide resin, or a bismaleimide triazine resin, or such a resin material containing fibers or cloth such as glass. As shown in FIG. 6, the insulating layer 52 may include a protective film 52 a provided on the surface layer (on the insulating film 52 b). For example, a material such as a solder resist is used for the protective film 52a.

  The capacitor 53 is provided in the insulating layer 52. The capacitor 53 is also referred to as a thin film capacitor layer or a TFC layer. The capacitor 53 includes a dielectric layer 53a, an electrode layer 53b provided on one surface (front surface) 53aa of the dielectric layer 53a, and an electrode layer 53c provided on the other surface (back surface) 53ab of the dielectric layer 53a. And have.

Various dielectric materials are used for the dielectric layer 53a. For example, a ceramic material is used for the dielectric layer 53a. As the ceramic material of the dielectric layer 53a, various high dielectric materials such as barium titanate (BaTiO ₃ ; BTO) are used. As the ceramic material of the dielectric layer 53a, barium strontium titanate (Ba _x Sr _1-x TiO ₃ ; BSTO) obtained by adding strontium (Sr) to BTO, strontium titanate (SrTiO ₃ ; STO), zirconate titanate A high dielectric material such as PZT (PLZT) to which lead (Pb (Zr, Ti) O ₃ ; PZT) or lanthanum (La) is added may be used. The thickness of the dielectric layer 53a is, for example, 1 μm to 3 μm.

  Various conductor materials are used for the electrode layer 53b and the electrode layer 53c. For example, a metal material is used for the electrode layer 53b and the electrode layer 53c. As a metal material of the electrode layer 53b and the electrode layer 53c, copper, nickel (Ni), or the like can be used. For example, nickel is used for the electrode layer 53b and copper is used for the electrode layer 53c. On the electrode layer 53b using nickel, a conductor layer 53d using a material such as copper having a lower resistivity than the nickel of the electrode layer 53b may be provided as shown in FIG. For example, the electrode layer 53b using nickel (and the conductor layer 53d using copper) is set to the ground potential (GND), and the electrode layer 53c using copper is set to the power supply potential (VDD). Each of the electrode layer 53b and the electrode layer 53c has a thickness of 15 μm to 30 μm, for example.

  The electrode layer 53b and the electrode layer 53c each have a predetermined planar shape. For example, the electrode layer 53b and the electrode layer 53c are each provided with an opening 53e in a predetermined region. FIG. 6 illustrates only the opening 53e provided in the electrode layer 53b and the conductor layer 53d out of the one electrode layer 53b and the conductor layer 53d thereon and the other electrode layer 53c.

  In the insulating layer 52 provided with the capacitor 53, a via 54b electrically connected to the electrode layer 53b and a via 54c electrically connected to the electrode layer 53c are provided. The via 54b penetrates the insulating film 52b that covers the upper side of the capacitor 53 (on the surface 53aa side of the dielectric layer 53a), and the electrode layer 53b on the surface 53aa side of the dielectric layer 53a or the conductor layer 53d (on the upper side). In the example of FIG. 6, it is connected to the conductor layer 53d). The via 54c penetrates the insulating film 52b and the dielectric layer 53a covering the upper side of the capacitor 53 (the surface 53aa side of the dielectric layer 53a), and is connected to the electrode layer 53c on the back surface 53ab side of the dielectric layer 53a. Various conductive materials, for example, metal materials such as copper are used for the via 54b and the via 54c.

  The stiffener 50 is provided with a terminal 55b and a terminal 55c connected to the via 54b and the via 54c, respectively. The terminal 55b is electrically connected to the electrode layer 53b through the via 54b, and the terminal 55c is electrically connected to the electrode layer 53c through the via 54c. For example, the terminal 55b is used as a ground terminal, and the terminal 55c is used as a power supply terminal.

  The stiffener 50 may be provided with a terminal 55a that is not electrically connected to either the electrode layer 53b or the electrode layer 53c. For example, the terminal 55a may be used as a dummy terminal that does not function as a part of the electric circuit, or may be used as a signal terminal to which a signal is input or output.

  FIG. 6 shows a part of the stiffener 50 having a terminal 55a that is not electrically connected to the electrode layer 53b and the electrode layer 53c, and a protective film 52a provided so that the terminal 55b, the terminal 55c, and the terminal 55a are exposed. It is shown. Various conductor materials, for example, metal materials such as copper, are used for the terminals 55b, 55c, and 55a.

  As shown in FIG. 6, bumps 56 such as solder balls are provided on the terminals 55b, 55c, and 55a, respectively. For example, the bump 56 group is arranged in a BGA (Ball Grid Array) type on the stiffener 50, and the stiffener 50 is provided with a terminal 55 b, a terminal 55 c, and a terminal 55 a so that the bump 56 group is arranged in this way. It is done.

  As shown in FIG. 3, the stiffener 50 is provided on the back surface 10 b of the circuit board 10, and the bump 56 group provided on the stiffener 50 is electrically connected to a conductor pattern provided on the circuit board 10. The stiffener 50 connected to the heat sink 40 and the rod 60 is electrically connected to the circuit board 10 (its conductor pattern) through the capacitor 56 and the bump 56 group electrically connected to the electrode layer 53b and the electrode layer 53c. Is done. The dielectric layer 53a of the capacitor 53 electrically connected to the circuit board 10 and the portions of the electrode layer 53b and the electrode layer 53c facing each other function as a capacitor. The stiffener 50 can be said to be a stiffener with a built-in capacitor function.

  According to the electronic device 1 having the above-described configuration, a capacitor can be disposed directly below the semiconductor device 20 (the back surface 10b of the circuit board 10) using the plate-like stiffener 50 and using the capacitor 53. it can. Thereby, the electrical performance improvement by a capacitor | condenser can be aimed at.

  Further, according to the electronic apparatus 1, the use of the plate-like stiffener 50 having a planar size that covers the mounting area of the semiconductor device 20 generates a shearing force associated with the connection of the rod 60 to the heat sink 40. Can be suppressed. Thereby, it can suppress that damage, such as a crack and a fracture | rupture, generate | occur | produces in the bump 23 group and the bump 24 group.

  Moreover, the flat stiffener 50 can fix the heat sink 40 stably. In the stiffener 50, a planar size corresponding to the size of the heat sink 40 can be adopted, and even a large heat sink 40 with high heat dissipation can be stably fixed.

  Further, in the stiffener 50, it is not always necessary to increase the thickness in order to stably fix the heat sink 40. Therefore, when the electronic device 1 is mounted on another electronic device, it interferes with its casing, rack, slot, etc., the arrangement and number of electronic devices 1 mounted on the electronic device, and the electronic device 1 on which the electronic device 1 is mounted. Increase in the size of the equipment can be suppressed.

  In addition, various electronic components such as a semiconductor device, a semiconductor chip, and chip components (such as a resistor, an inductor, and a coupling capacitor) are mounted on the back surface 10 b of the circuit board 10 outside the stiffener 50. It is also possible to achieve higher performance.

  According to the first embodiment, the stiffener 50 capable of obtaining the high-performance electronic device 1 having excellent electrical, mechanical, and thermal performance is realized. In addition, a high-performance electronic device 1 using such a stiffener 50 is realized.

Next, a method for forming the stiffener 50 will be described.
7 to 10 are views showing a first example of the stiffener forming method according to the first embodiment. 7A to FIG. 7C, FIG. 8A to FIG. 8C, FIG. 9A to FIG. 9C, and FIG. 10A and FIG. Each of them schematically shows a cross-sectional view of the main part of each step of the first example of stiffener formation.

First, as shown in FIG. 7A, a capacitor 53 having a dielectric layer 53a and an electrode layer 53b and an electrode layer 53c sandwiching the dielectric layer 53a is prepared.
The capacitor 53 is formed using, for example, the following method. That is, in the formation of the capacitor 53, a high dielectric material such as BTO that becomes the dielectric layer 53a is formed on the conductive material that becomes the electrode layer 53b, for example, nickel, and the conductive material that becomes the electrode layer 53c thereon. For example, copper is formed. Here, the high dielectric material such as BTO is formed by, for example, sintering on the electrode layer 53b, and the electrode layer 53c is formed thereon. When the high dielectric material is formed by sintering in this way, a conductive material that is thermally stable with respect to the temperature during sintering is used for the electrode layer 53b serving as the base. For example, nickel is used for the electrode layer 53b serving as a base, in consideration of cost and manufacturability in addition to such thermal stability. On the other hand, for the electrode layer 53c formed on the high dielectric material after sintering, there is no restriction on thermal stability like the electrode layer 53b, so that, for example, copper having a low resistivity is used.

  For example, the capacitor 53 using a predetermined material is formed and prepared for the dielectric layer 53a, the electrode layer 53b, and the electrode layer 53c by such a method. The capacitor 53 may be prepared by obtaining a commercially available one.

  Next, as illustrated in FIG. 7B, the capacitor 53 is attached to the base material 200 using the separator 210. The capacitor 53 is affixed with the electrode layer 53 c side facing the base material 200. The base material 200 is not particularly limited as long as it can stably hold the capacitor 53 and the structure formed thereon until it is separated from the capacitor 53 as described later. For example, as the base material 200, various substrates such as a metal substrate, a ceramic substrate, a glass substrate, a resin substrate, and a semiconductor substrate are used. The separator 210 holds the capacitor 53 and the structure formed thereon on the base material 200 until the base material 200 is separated from the capacitor 53 as described later, and then the base material 200 is separated. If possible, the material is not particularly limited. For example, various resin materials such as a paste, a sheet, and a film are used for the separator 210.

  The electrode layer 53c of the capacitor 53 may be patterned so as to have a predetermined pattern shape before being attached to the base material 200 as shown in FIG. In this case, patterning is performed by wet etching using a resist having a predetermined pattern shape formed on the electrode layer 53c as a mask. After patterning, the resist is removed. For example, by such patterning, the capacitor 53 having an opening at a predetermined position of the electrode layer 53c is formed. The capacitor 53 with the electrode layer 53c patterned may be attached to the base material 200 through the separator 210 as shown in FIG. 7B with the electrode layer 53c side facing the base material 200.

  Next, as shown in FIG. 7C, a conductor layer 53d is formed on the electrode layer 53b of the capacitor 53 attached on the base material 200 via the separator 210. A conductive material having a lower resistivity than the conductive material of the electrode layer 53b is used for the conductive layer 53d. For example, when nickel is used for the electrode layer 53b, copper is used for the conductor layer 53d. The conductor layer 53d is formed by, for example, electroless plating, electrolytic plating, or both. The conductor layer 53d may be formed using a sputtering method or the like in addition to the plating method.

  Next, as shown in FIG. 8A, the electrode layer 53b of the capacitor 53 and the conductor layer 53d thereon are patterned so as to have a predetermined pattern shape. The patterning is performed by wet etching using a resist having a predetermined pattern shape formed on the conductor layer 53d as a mask. After patterning, the resist is removed. For example, by such patterning, an opening 53e is formed at a predetermined position of the electrode layer 53b and the conductor layer 53d thereon.

  Next, as shown in FIG. 8B, the insulating film 52b (a part of the insulating layer 52) so as to cover the patterned electrode layer 53b and conductor layer 53d side of the capacitor 53 on the base material 200. Is formed. For example, an insulating film 52b using an epoxy resin or the like is laminated on the electrode layer 53b side of the capacitor 53 by thermocompression bonding. Alternatively, a resin material such as an epoxy resin is applied by a spin coating method or the like to form the insulating film 52b.

  Next, as illustrated in FIG. 8C, an opening 57 b that communicates with the conductor layer 53 d provided on the electrode layer 53 b of the capacitor 53 and an opening 57 c that communicates with the electrode layer 53 c of the capacitor 53 are formed. For example, the opening 57b and the opening 57c are formed by laser processing on the insulating film 52b.

  Next, as shown in FIG. 9A, a via 54b and a via 54c are formed in the opening 57b and the opening 57c formed in the insulating film 52b, respectively, and further, the via 54b and the via 54b are formed on the insulating film 52b. A terminal 55b and a terminal 55c connected to the via 54c are formed. On the insulating film 52b, as shown in FIG. 9A, the terminal 55a is formed together with the terminal 55b and the terminal 55c. The vias 54b and 54c, the terminals 55b and 55c, and the terminals 55a are all formed using copper, for example, and are formed by electroless plating, electrolytic plating, or both.

  Next, as shown in FIG. 9B, the protective film 52a is formed so that the terminals 55b, 55c, and a part of the terminal 55a are exposed on the insulating film 52b on which the terminals 55b, 55c, and 55a are formed. (A part of the insulating layer 52) is formed.

  Next, as shown in FIG. 9C, the structure 2 in which the insulating film 52b, the via 54b and the via 54c, the terminal 55b and the terminal 55c, the terminal 55a, and the protective film 52a are formed over the capacitor 53 as described above. The base material 200 and the separator 210 are separated.

  Next, the separated structure 2 is attached to the substrate 51 of the stiffener 50 via the insulating film 52c (a part of the insulating layer 52) as shown in FIG. For example, the structure 2 and the substrate 51 are laminated by thermocompression bonding with an insulating film 52c using an epoxy resin or the like interposed therebetween.

Next, as shown in FIG. 10B, bumps 56 such as solder balls are mounted on the terminals 55b and 55c and the terminals 55a exposed from the protective film 52a.
As described above, by the method as shown in the first example, the vias 54b and 54c and the terminals 55b which have the capacitor 53 in the insulating layer 52 and are electrically connected to the electrode layers 53b and 53c sandwiching the dielectric layer 53a. , 55c is formed.

  The stiffener 50 may be obtained in a state before the formation of the bump 56 group as shown in FIG. 10A, or after the formation of the bump 56 group as shown in FIG. 10B. May be obtained.

  In the formation of the stiffener 50, in accordance with the examples of FIGS. 8B and 8C, the insulating layer and the via and the wiring connected thereto are formed a plurality of times. A wiring structure may be formed. In the step of FIG. 9B, a multilayer wiring structure may be formed on the substrate 51, and the structure 2 may be attached thereon.

The stiffener 50 can also be formed using a method as shown in FIGS.
11 and 12 are diagrams showing a second example of the stiffener forming method according to the first embodiment. 11 (A) to 11 (C) and FIGS. 12 (A) and 12 (B) each schematically show a cross-sectional view of the main part of each step of the second example of stiffener formation. .

  In this example, first, as shown in FIG. 11A, the prepared capacitor 53 or the prepared capacitor 53 having the electrode layer 53c patterned thereon is formed on the substrate 51 of the stiffener 50 with the insulating film 52c (described above). A part of the insulating layer 52 is attached. The capacitor 53 can be attached according to the example of FIG.

  Next, as illustrated in FIG. 11B, the conductor layer 53 d is formed over the electrode layer 53 b of the capacitor 53. The conductor layer 53d can be formed according to the example of FIG.

  Next, as shown in FIG. 11C, patterning is performed so that the electrode layer 53b of the capacitor 53 and the conductor layer 53d thereon have a predetermined pattern shape, for example, have an opening 53e at a predetermined position. Is done. The patterning of the electrode layer 53b and the conductor layer 53d can be performed according to the example of FIG.

  Next, as shown in FIG. 12A, an insulating film 52b (a part of the insulating layer 52) is formed so as to cover the patterned electrode layer 53b and conductor layer 53d side of the capacitor 53. The insulating film 52b can be formed in accordance with the example of FIG.

  Next, as shown in FIG. 12B, a via 54b and a via 54c are formed in the insulating film 52b, and a terminal 55b, a terminal 55c, a terminal 55a, and a protective film 52a are formed on the insulating film 52b. Formation of the via 54b and the via 54c, the terminal 55b and the terminal 55c, the terminal 55a, and the protective film 52a can be performed according to the example of FIGS. 8C, 9A, and 9B.

  Thereafter, in accordance with the example of FIG. 10B, bumps 56 such as solder balls are respectively mounted on the terminals 55b, 55c and the terminals 55a exposed from the protective film 52a, and the stiffener 50 is formed.

Note that a state before the formation of the bump 56 group as shown in FIG. 12B may be obtained as the stiffener 50.
As described above, the stiffener 50 may be formed by the method shown in the second example. In the method shown in the second example, the use of the base material 200 and the separator 210 described in the first example can be omitted.

  It is also possible to incorporate a capacitor in the circuit board 10 to form a so-called capacitor built-in circuit board. However, in the circuit board with a built-in capacitor, a relatively expensive capacitor is built in a place where there is a risk of yield reduction in the wiring formation process, lamination process, or build-up process of the circuit board part excluding the capacitor, so that the cost due to the yield reduction is reduced. The influence of is great. On the other hand, in the stiffener 50, the capacitor 53 and the electrical connection structure (vias 54b and 54c and terminals 55a, 55b and 55c) are formed on the flat substrate 51. Therefore, it is possible to eliminate as much as possible the factor of yield reduction other than the formation of the capacitor 53 and the electrical connection structure therewith, and it is possible to effectively suppress the increase in cost due to the yield reduction.

Next, a method for assembling the electronic device 1 will be described.
FIG. 13 is a diagram illustrating a first example of an electronic device assembling method according to the first embodiment. FIGS. 13A to 13C each schematically show a cross-sectional view of the main part of each step of the first example of assembling the electronic device.

  In assembling the electronic device 1, first, the stiffener 50 is mounted on the back surface 10 b of the circuit board 10 as shown in FIG. The stiffener 50 is bonded to the back surface 10 b of the circuit board 10 using a group of bumps 56 mounted on the surface side where the capacitor 53 is provided. For example, the stiffener 50 and the circuit board 10 are aligned, and the bumps 56 formed of solder balls are reflowed, whereby the stiffener 50 and the circuit board 10 are joined.

  Next, for example, as illustrated in FIG. 13B, the semiconductor device 20 provided with the lid 30 is mounted on the surface 10 a of the circuit board 10. The semiconductor device 20 is formed by mounting a semiconductor chip 22 on a package substrate 21 using a group of bumps 23 and further mounting another electronic component 25. The lid 30 is provided on the semiconductor chip 22 via the TIM 90 and bonded to the package substrate 21 using an adhesive 80. The semiconductor device 20 thus provided with the lid 30 is bonded to the front surface 10a of the circuit board 10 in which the stiffener 50 is bonded to the back surface 10b by using the bump 24 group mounted on the package substrate 21. For example, the circuit board 10 and the semiconductor device 20 are aligned, and the bumps 24 formed of solder balls are reflowed to join the circuit board 10 and the semiconductor device 20.

  Next, for example, as shown in FIG. 13C, the heat sink 40 is connected to the stiffener 50 using the rod 60. The heat sink 40 is provided on the lid 30. The rod 60 is inserted into the heat sink 40 and the circuit board 10, and the tip thereof is fixed to the connecting portion 50 a of the stiffener 50 by means such as screwing or fitting. Thereby, the heat sink 40 and the stiffener 50 are connected by the rod 60.

For example, the electronic device 1 is assembled by a method shown in FIGS. 13 (A) to 13 (C).
Further, the electronic device 1 may be assembled by a method as shown in FIG.

  FIG. 14 is a diagram illustrating a second example of the electronic device assembling method according to the first embodiment. FIGS. 14A to 14C each schematically show a cross-sectional view of the main part of each step of the second example of assembling the electronic device.

  In this example, after the stiffener 50 is mounted on the back surface 10b of the circuit board 10 as shown in FIG. 13A, the rod 60 is inserted into the circuit board 10 as shown in FIG. The tip is fixed to the connecting portion 50a of the stiffener 50 by means such as screwing or fitting.

  14B, the semiconductor device 20 provided with the lid 30 is mounted on the surface 10a of the circuit board 10, and the heat sink 40 is attached to the rod 60 as shown in FIG. It is done. Thereby, the heat sink 40 and the stiffener 50 are connected by the rod 60.

For example, the electronic device 1 may be assembled by performing the steps shown in FIGS. 14A to 14C after the step of FIG. 13A.
Next, an example of connection between the stiffener 50 and the circuit board 10 will be described.

  FIG. 15 is a diagram illustrating an example of the connection between the stiffener and the circuit board according to the first embodiment. FIG. 15 schematically shows a cross-sectional view of the main part of an example of the connected stiffener and circuit board.

In the electronic device 1, the capacitor 53 of the stiffener 50 is used as, for example, a bypass capacitor (decoupling capacitor).
In this case, the terminal 55b electrically connected to the electrode layer 53b of the capacitor 53 via the via 54b is electrically connected to the conductor pattern 11 having the ground potential (GND) of the circuit board 10 through the bump 56. The As an example of the conductor pattern 11, FIG. 15 shows a conductor pattern 11 including a ground plane layer 11a, a via 11b, and a terminal 11c.

  Furthermore, the terminal 55c electrically connected to the electrode layer 53c of the capacitor 53 via the via 54c is electrically connected to the conductor pattern 12 (VDD) which is the power supply potential (VDD) of the circuit board 10 through the bump 56. Connected. As an example of the conductor pattern 12, FIG. 15 shows a conductor pattern 12 including a ground plane layer 12a, a via 12b, and a terminal 12c.

  For example, the dielectric layer 53a and the electrode layer 53b and the electrode layer 53c sandwiching the dielectric layer 53a of the capacitor 53 provided in the stiffener 50 connected to the circuit board 10 in this way function as a bypass capacitor. Thereby, the noise component (power supply noise) of the power supplied to the circuit board 10 is reduced, the intrusion of the power supply noise to the semiconductor device 20 and other electronic components mounted on the circuit board 10 is suppressed, the semiconductor device 20 and the like. Stable operation can be realized. By connecting the stiffener 50 having the capacitor 53 as described above, the high-performance electronic apparatus 1 that can stably operate the semiconductor device 20 and the like mounted on the circuit board 10 can be realized.

  Further, the stiffener 50 is provided with a terminal 55a that is not electrically connected to the electrode layer 53b and the electrode layer 53c of the capacitor 53 as shown in FIG. The terminal 55 a is connected to the conductor pattern 13 of the circuit board 10 through the bump 56. As an example of the conductor pattern 13, FIG. 15 shows a conductor pattern 13 including a terminal 13c that is neither a ground potential nor a power supply potential.

  As in the example shown in FIG. 15, in the electronic device 1, the stiffener 50 is provided with a terminal 55 a that is electrically separated together with the terminal 55 b and the terminal 55 c, and the terminal 11 c and the terminal 12 c are provided on the circuit board 10. In addition, an electrically separated terminal 13c may be provided. In this case, a terminal group of terminals 55b, 55c, and 55a provided on the stiffener 50 and a terminal group of terminals 11c, 12c, and 13c provided on the circuit board 10 have a grid array arrangement corresponding to each other.

  If the stiffener 50 and the terminal group provided on the circuit board 10 are arranged in a grid array corresponding to each other, the load applied to the bump 56 group between them can be made uniform. For example, the load applied to the bump 56 group when the stiffener 50 is mounted on the circuit board 10 and the load applied to the bump 56 group when the heat sink 40 and the stiffener 50 are connected using the rod 60 are made uniform. As a result, it is possible to suppress the occurrence of damage such as cracks and breaks due to excessive force locally applied to a part of the bump 56 group.

  Further, by using the plate-like stiffener 50, for example, compared to the case of using a flat square shape stiffener (FIG. 2), the generation of shearing force when the rod 60 is connected to the heat sink 40 is suppressed, and the bumps 24 group It is possible to make the load applied to the surface uniform and suppress the damage.

The stiffener 50 and the circuit board 10 may be connected as shown in FIG.
FIG. 16 is a view showing a modification of the connection between the stiffener and the circuit board according to the first embodiment. FIGS. 16A and 16B schematically show a cross-sectional view of main parts of an example of the connected stiffener and the circuit board, respectively.

  For example, as shown in FIG. 16A, a terminal 55a electrically separated from the terminal 55b and the terminal 55c of the stiffener 50 and a terminal 13c electrically separated from the terminal 11c and the terminal 12c of the circuit board 10 are provided. Alternatively, a configuration in which the bumps 56 are not joined may be employed.

For example, as shown in FIG. 16B, a configuration in which the terminal 55a is not provided in the stiffener 50 and the terminal 13c is not provided in the circuit board 10 may be employed.
In the case where the unevenness of the load applied to the bump 56 group interposed between the stiffener 50 and the circuit board 10 can be suppressed, the stiffener 50 and the circuit board 10 are connected to each other as shown in FIG. You may connect as shown to 16 (B).

  In the above description, an example in which the stiffener 50 and the circuit board 10 are connected using the bump 56 group formed of solder balls has been shown. However, the connection between the stiffener 50 and the circuit board 10 is such a ball. However, the present invention is not limited to the one using the protruding electrode group such as the bump 56 in the shape of the electrode. For example, a pillar-shaped or post-shaped protruding electrode group protruding from the surface of the insulating layer 52 may be provided on the stiffener 50, and the stiffener 50 and the circuit board 10 may be connected using them.

  Further, using a connecting member having an insulating layer and a group of elastic conductor columns penetrating the insulating layer, the vertical conduction of each elastic conductor column is realized by pressure contact using a load at the time of coupling the stiffener 50 and the heat sink 40, The stiffener 50 and the circuit board 10 can also be connected.

[Second Embodiment]
FIG. 17 is a diagram illustrating an example of an electronic apparatus according to the second embodiment. FIG. 17 schematically illustrates a cross-sectional view of a main part of an example of an electronic device using a stiffener.

  The electronic device 1 </ b> B illustrated in FIG. 17 includes a nut 320 provided at a predetermined position of the rod 60 that connects the stiffener 50 and the heat sink 40. In this case, a bolt to which the nut 320 can be screwed is used for the rod 60 of the electronic device 1B. The electronic device 1B is different from the electronic device 1 described in the first embodiment in this respect.

  The nut 320 is fixed to the position of the surface 10 a of the circuit board 10 of the rod 60 that is inserted through the circuit board 10 and has a tip end fixed to the connecting portion 50 a of the stiffener 50. By providing the nut 320, the fluctuation of the position between the circuit board 10 and the stiffener 50 bonded to the back surface 10b thereof, that is, the fluctuation of the gap between the circuit board 10 and the stiffener 50 is suppressed.

  FIG. 18 is a diagram illustrating an example of an electronic device assembling method according to the second embodiment. FIGS. 18A to 18C each schematically show a cross-sectional view of the main part of each step of an example of assembling the electronic device.

  In this example, after the stiffener 50 is joined to the back surface 10b of the circuit board 10 as shown in FIG. 13A, the rod 60 is inserted into the circuit board 10 as shown in FIG. The leading end is fixed to the connecting portion 50 a of the stiffener 50. Further, as shown in FIG. 18A, a nut 320 is screwed onto the rod 60 and fixed to the position of the surface 10 a of the circuit board 10. As a result, the stiffener 50 is bonded and fixed to the back surface 10b of the circuit board 10 by the bump 56 group, and fixed so that the bonding with the circuit board 10 is maintained by the rod 60 and the nut 320 attached thereto. Is done.

  Then, as shown in FIG. 18B, the semiconductor device 20 provided with the lid 30 is mounted on the surface 10a of the circuit board 10, and the heat sink 40 is attached to the rod 60 as shown in FIG. It is done. Thereby, the heat sink 40 and the stiffener 50 are connected by the rod 60.

For example, after the step of FIG. 13A, the steps shown in FIGS. 18A to 18C are performed to assemble the electronic device 1B.
[Third Embodiment]
The electronic devices 1, 1B and the like as described above can be mounted on various electronic devices (also referred to as electronic devices). For example, it can be mounted on various electronic devices such as computers (personal computers, supercomputers, servers, etc.), smartphones, mobile phones, tablet terminals, sensors, cameras, audio devices, measuring devices, inspection devices, and manufacturing devices.

FIG. 19 is a diagram for explaining an electronic apparatus according to the third embodiment. FIG. 19 schematically shows an electronic device.
As shown in FIG. 19, for example, the electronic device 1 (FIG. 3) as described in the first embodiment is mounted (built in) inside the housing 410 of various electronic devices 400. The electronic device 1 may be accommodated in a rack or slot provided in the electronic device 400.

  In the electronic device 1, a stiffener 50 having a capacitor 53 is used, and the heat sink 40 is connected to the stiffener 50 by a rod 60. The capacitor 53 of the stiffener 50 is electrically connected to the circuit board 10 sandwiched between the stiffener 50 connected by the rod 60 and the heat sink 40 through the bump 56 group. For example, the capacitor 53 of the stiffener 50 is electrically connected to a conductor pattern that is a power supply potential and a conductor pattern that is a ground potential of the circuit board 10, and is used as a bypass capacitor that reduces power supply noise.

  By using the stiffener 50 having the capacitor 53, it is possible to dispose a capacitor immediately below the semiconductor device 20 and improve the electrical performance of the electronic device 1. Further, by using the flat stiffener 50, it is possible to suppress the generation of shearing force when the rod 60 is connected to the heat sink 40, and to suppress the damage to the bump group 23 and the bump group 24. A large heat sink 40 having a high height can be stably fixed. The stiffener 50 does not necessarily need to be thickened in order to stably fix the heat sink 40. Therefore, when the electronic device 1 is mounted on the electronic device 400, interference, arrangement, The limitation on the number and the increase in size of the electronic device 400 can be suppressed.

  The stiffener 50 having the capacitor 53 realizes a high-performance electronic device 1 that is excellent in electrical, mechanical, and thermal performance, and realizes a high-performance electronic device 400 equipped with such an electronic device 1. .

  Here, the electronic device 400 on which the electronic device 1 is mounted is shown as an example, but the electronic device 1B and the like can be similarly mounted on various electronic devices.

1, 1B, 100A, 100B Electronic device 2 Structure 10, 110 Circuit board 10a, 21a, 53aa, 110a, 121a Front surface 10b, 21b, 53ab, 110b, 121b Back surface 11, 12, 13 Conductor pattern 11a, 12a Ground plane layer 11b, 12b, 54b, 54c Via 11c, 12c, 13c, 55a, 55b, 55c Terminal 20, 120 Semiconductor device 21, 121 Package substrate 22, 122 Semiconductor chip 23, 24, 56, 123, 124 Bump 25, 125 Electronic component 26, 126 Underfill 30, 130 Lid 40, 140 Heat sink 41, 141 Fin 50, 150A, 150B Stiffener 50a, 150a, 150b Connecting portion 50aa Hole 51 Substrate 52 Insulating layer 52a Protective film 52 , 52c insulating film 53 capacitor 53a dielectric layer 53b, 53c electrode layer 53d conductor layer 53e, 57b, 57c, 151 opening 60, 160 rod 80, 180 adhesive 90,190 TIM
170 Capacitor 200 Base Material 210 Separator 320 Nut 400 Electronic Device 410 Case

Claims (8)

A substrate having a connecting portion to which a heat sink is connected;
An insulating layer provided on the substrate;
Provided in the insulating layer, provided on a dielectric layer, a first electrode layer provided on the first surface of the dielectric layer, and a second surface opposite to the first surface of the dielectric layer. And a capacitor having a second electrode layer. A first terminal provided on a surface of the insulating layer opposite to the substrate side and electrically connected to the first electrode layer;
The stiffener according to claim 1, further comprising: a second terminal provided on the surface of the insulating layer and electrically connected to the second electrode layer. The first terminal includes a first protruding electrode protruding from the surface of the insulating layer,
The stiffener according to claim 2, wherein the second terminal includes a second protruding electrode protruding from the surface of the insulating layer. The first electrode layer and the second electrode layer are respectively provided on the surface side and the substrate side with the dielectric layer interposed therebetween,
The first terminal is electrically connected to the first electrode layer through a first via provided in the insulating layer,
The second terminal is electrically connected to the second electrode layer through a second via provided in the insulating layer and penetrating the first electrode layer in a non-contact manner and penetrating the dielectric layer. The stiffener according to claim 2 or 3.   The stiffener according to any one of claims 2 to 4, further comprising a third terminal provided on the surface of the insulating layer and electrically separated from the first electrode layer and the second electrode layer. .   The stiffener according to any one of claims 1 to 5, wherein the connecting portion has a hole in which a rod is inserted and fixed. A circuit board;
A semiconductor device mounted on the circuit board;
A heat sink provided on the semiconductor device and thermally connected to the semiconductor device;
A stiffener provided in a region facing the semiconductor device under the circuit board and connected to the heat sink;
The stiffener is
A substrate having a connecting portion to which the heat sink is connected;
An insulating layer provided on a surface of the substrate facing the circuit board;
A dielectric layer provided in the insulating layer; a first electrode layer provided on a first surface of the dielectric layer and electrically connected to the circuit board; and the first surface of the dielectric layer; And a capacitor having a second electrode layer provided on the opposite second surface and electrically connected to the circuit board.   8. The rod according to claim 7, further comprising a rod penetrating the circuit board, having one end connected to the heat sink and the other end connected to the stiffener, and connecting the heat sink and the stiffener. Electronic equipment.

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