JP2019168468A - Magnetic sensor - Google Patents

Abstract

To prevent, in a magnetic sensor including a soft magnetic structure and two detection units, a situation in which due to the soft magnetic structure, the characteristics of outputs from the two detection units become different.SOLUTION: A magnetic sensor 1 comprises first to third detection units 10, 20, 30 detecting components in an X-direction, a Y-direction, and a Z-direction of an external magnetic field. The third detection unit 30 includes a soft magnetic structure. The first detection unit 10 includes first and second portions 11, 12. The second detection unit 20 includes third and fourth portions 21, 22. The first portion 11 and fourth portion 22 are located on both sides of the third detection unit 30 in the X-direction. The second portion 12 and third portion 21 are located on both sides of the third detection unit 30 in the Y-direction.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a magnetic sensor including a soft magnetic structure and two detection units.

  In recent years, geomagnetic sensors may be incorporated in mobile communication devices such as mobile phones. A geomagnetic sensor for such an application is required to be small and to detect the three-dimensional direction of an external magnetic field. Such a geomagnetic sensor is realized using, for example, a magnetic sensor. As a magnetic sensor, one using a plurality of magnetic detection elements provided on a substrate is known. As the magnetic detection element, for example, a magnetoresistance effect element is used.

  Patent Document 1 describes a geomagnetic sensor in which an X-axis magnetic sensor, a Y-axis magnetic sensor, and a Z-axis magnetic sensor are provided on a support. In this geomagnetic sensor, the Z-axis magnetic sensor includes a magnetoresistive element and a soft magnetic material. The soft magnetic material converts a vertical magnetic field component in a direction parallel to the Z axis into a horizontal magnetic field component in a direction perpendicular to the Z axis, and applies this horizontal magnetic field component to the magnetoresistive element.

International Publication No. 2011/068146

  In the geomagnetic sensor in which the X-axis magnetic sensor, the Y-axis magnetic sensor, and the Z-axis magnetic sensor are integrated like the geomagnetic sensor described in Patent Document 1, the X-axis magnetic sensor and the Y-axis magnetic sensor are each independent. Even if it is designed to have equivalent characteristics, there is a problem in that the output of each of the X-axis magnetic sensor and the Y-axis magnetic sensor may not be equivalent characteristics when incorporated in the geomagnetic sensor. . The reason is that the magnetic field applied to each of the X-axis magnetic sensor and the Y-axis magnetic sensor is different due to the effect of the soft magnetic body collecting the magnetic flux, compared to the case without the soft magnetic body. it is conceivable that.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a magnetic sensor capable of suppressing the difference in the output characteristics of the two detection units due to the soft magnetic structure. is there.

  The magnetic sensor of the present invention includes a first detection unit for detecting a component in a direction parallel to the first direction of the external magnetic field, and a component for detecting a component in a direction parallel to the second direction of the external magnetic field. A second detection unit, a soft magnetic structure made of a soft magnetic material, and a first detection unit, a second detection unit, and a support unit that supports the soft magnetic structure are provided.

  The support part has a reference plane orthogonal to the third direction. The first to third directions are orthogonal to each other. The reference plane includes a first area, a second area, and a third area that are different from each other. The first area is an area formed by vertically projecting the first detection unit on the reference plane. The second area is an area formed by vertically projecting the second detection unit onto the reference plane. The third region is a region formed by vertically projecting the soft magnetic structure on the reference plane.

  The first detection unit includes a first part and a second part arranged at different positions. The second detection unit includes a third part and a fourth part that are arranged at different positions. Each of the first to fourth portions includes at least one magnetic detection element.

  The first region includes a first partial region formed by vertically projecting the first portion on the reference plane, and a second partial region formed by vertically projecting the second portion on the reference plane. The second region includes a third partial region formed by vertically projecting the third portion on the reference plane, and a fourth partial region formed by vertically projecting the fourth portion on the reference plane. When two straight lines that pass through the center of gravity of the third region and are perpendicular to the third direction and orthogonal to each other are defined as the first straight line and the second straight line, the first partial region and the fourth partial region are: It is located on both sides or one side of the third region in the direction parallel to the first straight line. The second partial region and the third partial region are located on both sides or one side of the third region in a direction parallel to the second straight line.

  Each of the first and second portions generates a detection value corresponding to a component in a direction parallel to the first direction of the external magnetic field. Each of the third and fourth portions generates a detection value corresponding to a component in a direction parallel to the second direction of the external magnetic field.

  In the magnetic sensor of the present invention, the support portion may include a substrate having an upper surface. In this case, the first detection unit, the second detection unit, and the soft magnetic structure may be disposed on or above the upper surface of the substrate. The reference plane may be the upper surface of the substrate.

  In the magnetic sensor of the present invention, all the magnetic detection elements included in the first to fourth portions may be arranged at the same distance from the reference plane.

  In the magnetic sensor of the present invention, the soft magnetic structure includes a magnetic field converter that receives a component in a direction parallel to the third direction of the external magnetic field and outputs an output magnetic field component in a direction perpendicular to the third direction. May be included.

  In the magnetic sensor of the present invention, the soft magnetic structure may include at least one soft magnetic layer.

  In the magnetic sensor of the present invention, when the first partial region and the second partial region are rotated by 90 ° about the center of gravity of the third region when viewed from the third direction, The positional relationship may overlap the two partial regions. In addition, the third partial region and the fourth partial region are positions where the third partial region overlaps the fourth partial region when the third partial region is rotated by 90 ° about the center of gravity of the third region as viewed from the third direction. Relationship may be.

  In the magnetic sensor of the present invention, the at least one magnetic detection element may be at least one magnetoresistance effect element.

  The magnetic sensor of the present invention further includes a first detection value corresponding to a component in a direction parallel to the first direction of the external magnetic field by calculation using the detection values of the first and second portions. The second detection value corresponding to the component in the direction parallel to the second direction of the external magnetic field is calculated by the calculation using the first calculation circuit that generates and the detection values of the third and fourth portions. And a second arithmetic circuit to be generated.

  In the case where the magnetic sensor of the present invention includes the first and second arithmetic circuits, the first and second portions are arranged in accordance with the change in the component in the direction parallel to the first direction of the external magnetic field. The detection values of the second portion and the second portion may be configured to increase or decrease together. Further, in the third and fourth portions, the detected values of the third and fourth portions both increase or decrease together with the change of the component in the direction parallel to the second direction of the external magnetic field. It may be configured as follows. Further, the calculation by the first arithmetic circuit may include obtaining the sum of the detection values of the first and second portions. Further, the calculation by the second calculation circuit may include obtaining the sum of the detection values of the third and fourth portions.

  Further, when the magnetic sensor of the present invention includes the first and second arithmetic circuits, the first and second portions are accompanied by a change in the component of the external magnetic field in the direction parallel to the first direction. One of the detection values of each of the first and second portions may be increased and the other may be decreased. In the third and fourth portions, one of the detected values of the third and fourth portions increases and the other decreases in accordance with the change in the component of the external magnetic field in the direction parallel to the second direction. It may be configured to. In addition, the calculation by the first calculation circuit may include obtaining a difference between detection values of the first and second portions. In addition, the calculation by the second calculation circuit may include obtaining a difference between detection values of the third and fourth portions.

  In the magnetic sensor of the present invention, the first partial region and the fourth partial region are located on both sides or one side of the third region in the direction parallel to the first straight line, and the second partial region and the third partial region The partial regions are located on both sides or one side of the third region in the direction parallel to the second straight line. Thereby, according to this invention, there exists an effect that it can suppress that the characteristic of the output of a 1st and 2nd detection part resulting from a soft-magnetic structure differs.

1 is a plan view showing a schematic configuration of a magnetic sensor according to a first embodiment of the invention. It is explanatory drawing which shows the structure regarding the 1st and 2nd detection part in the magnetic sensor which concerns on the 1st Embodiment of this invention, and the wiring regarding a 1st detection part. It is explanatory drawing which shows the structure regarding the 1st and 2nd detection part in the magnetic sensor which concerns on the 1st Embodiment of this invention, and the wiring regarding a 2nd detection part. It is explanatory drawing which shows the wiring regarding the 3rd detection part in the magnetic sensor which concerns on the 1st Embodiment of this invention. It is a perspective view which shows the magnetoresistive effect element in the magnetic sensor which concerns on the 1st Embodiment of this invention. It is a perspective view which shows a part of one resistance part in the magnetic sensor which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows a part of each of the 1st thru | or 3rd detection part in the magnetic sensor which concerns on the 1st Embodiment of this invention. It is a circuit diagram which shows the circuit in connection with the 1st and 2nd detection part in the magnetic sensor which concerns on the 1st Embodiment of this invention. It is explanatory drawing which shows the structure regarding the circuit and magnetic field conversion part which concern on the 3rd detection part in the magnetic sensor which concerns on the 1st Embodiment of this invention. It is explanatory drawing which shows a mode that the external magnetic field of the X direction was applied to the magnetic sensor which concerns on the 1st Embodiment of this invention. It is explanatory drawing for demonstrating the effect of the magnetic sensor which concerns on the 1st Embodiment of this invention. It is explanatory drawing which shows a mode that the external magnetic field of the Y direction was applied to the magnetic sensor which concerns on the 1st Embodiment of this invention. It is explanatory drawing for demonstrating the effect of the magnetic sensor which concerns on the 1st Embodiment of this invention. It is a circuit diagram which shows the circuit in connection with the 1st detection part in the magnetic sensor which concerns on the 2nd Embodiment of this invention. It is a circuit diagram which shows the circuit in connection with the 2nd detection part in the magnetic sensor which concerns on the 2nd Embodiment of this invention. It is explanatory drawing which shows the structure regarding the 1st and 2nd detection part in the magnetic sensor which concerns on the 3rd Embodiment of this invention, and the wiring regarding a 1st detection part. It is explanatory drawing which shows the structure regarding the 1st and 2nd detection part in the magnetic sensor which concerns on the 3rd Embodiment of this invention, and the wiring regarding a 2nd detection part. It is a circuit diagram which shows the circuit in connection with the 1st and 2nd detection part in the magnetic sensor which concerns on the 3rd Embodiment of this invention. It is explanatory drawing for demonstrating the effect of the magnetic sensor which concerns on the 3rd Embodiment of this invention. It is explanatory drawing for demonstrating the effect of the magnetic sensor which concerns on the 3rd Embodiment of this invention. It is a top view which shows the schematic structure of the magnetic sensor which concerns on the 4th Embodiment of this invention.

[First Embodiment]
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, a schematic configuration of the magnetic sensor according to the first embodiment of the present invention will be described with reference to FIG. The magnetic sensor 1 according to the present embodiment is a sensor that detects components in three directions orthogonal to each other of an external magnetic field.

  As shown in FIG. 1, the magnetic sensor 1 includes a first detection unit 10 for detecting a component in a direction parallel to the first direction of the external magnetic field, and a direction parallel to the second direction of the external magnetic field. The second detection unit 20 for detecting the component, the third detection unit 30 for detecting the component of the external magnetic field in the direction parallel to the third direction, and the support unit 50 are provided. The first to third directions are orthogonal to each other. Each of the first to third detection units 10, 20, and 30 includes at least one magnetic detection element.

  The third detection unit 30 further includes a soft magnetic structure 40 made of a soft magnetic material. The soft magnetic structure 40 includes a magnetic field converter 42 and at least one soft magnetic layer. The magnetic field converter 42 is shown in FIGS. 7 and 9 described later. The magnetic field converter 42 receives a component of the external magnetic field in a direction parallel to the third direction, and outputs an output magnetic field component in a direction perpendicular to the third direction. Hereinafter, the component of the external magnetic field in the direction parallel to the third direction is referred to as the input magnetic field component. The strength of the output magnetic field component has a corresponding relationship with the strength of the input magnetic field component. The third detection unit 30 detects the strength of the input magnetic field component by detecting the strength of the output magnetic field component. The soft magnetic structure 40 will be described in detail later.

  The support unit 50 is a structure that supports the first to third detection units 10, 20, and 30. The support part 50 includes a substrate 51 having a lower surface and an upper surface 51a located on opposite sides.

  Here, as shown in FIG. 1, an X direction, a Y direction, and a Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. The X direction and the Y direction are directions parallel to the upper surface 51 a of the substrate 51. The Z direction is a direction perpendicular to the upper surface 51a of the substrate 51 and is directed from the lower surface of the substrate 51 toward the upper surface 51a. In addition, a direction opposite to the X direction is defined as -X direction, a direction opposite to the Y direction is defined as -Y direction, and a direction opposite to the Z direction is defined as -Z direction. Hereinafter, a position ahead of the reference position in the Z direction is referred to as “upward”, and a position on the opposite side of “upper” with respect to the reference position is referred to as “downward”. Regarding the components of the magnetic sensor 1, a surface located at the end in the Z direction is referred to as “upper surface”, and a surface located at the end in the −Z direction is referred to as “lower surface”.

  Particularly in the present embodiment, the first direction coincides with the X direction, the second direction coincides with the Y direction, and the third direction coincides with the Z direction.

  The first to third detection units 10, 20, and 30 are disposed on or above the upper surface 51 a of the substrate 51.

  The support part 50 has a reference plane RP orthogonal to the third direction, that is, the Z direction. Particularly in the present embodiment, the reference plane RP is the upper surface 51 a of the substrate 51.

  The reference plane RP includes a first area A10, a second area A20, and a third area A30 that are different from each other. The first area A10 is an area formed by vertically projecting the first detection unit 10 onto the reference plane RP. The second area A20 is an area formed by vertically projecting the second detection unit 20 onto the reference plane RP. The third area A30 is an area formed by vertically projecting the third detection unit 30 onto the reference plane RP.

  In the present embodiment, the first detection unit 10 includes a first portion 11 and a second portion 12 that are arranged at different positions. The second detection unit 20 includes a third portion 21 and a fourth portion 22 that are arranged at different positions. Each of the first to fourth portions 11, 12, 21, 22 and the third detection unit 30 includes at least one magnetic detection element.

  The first region A10 includes a first partial region A11 obtained by vertically projecting the first portion 11 on the reference plane RP, and a second partial region obtained by vertically projecting the second portion 12 on the reference plane RP. A12 is included. The second region A20 includes a third partial region A21 obtained by vertically projecting the third portion 21 onto the reference plane RP, and a fourth partial region obtained by vertically projecting the fourth portion 22 onto the reference plane RP. A22 is included.

  Here, two straight lines that pass through the center of gravity C30 of the third region A30 and are perpendicular to the third direction (Z direction) and orthogonal to each other are defined as a first straight line L1 and a second straight line L2. In the present embodiment, in particular, the first straight line L1 is parallel to the X direction, and the second straight line L2 is parallel to the Y direction. The first partial region A11 and the fourth partial region A22 are located on both sides or one side of the third region A30 in the direction parallel to the first straight line L1. In the present embodiment, the first partial region A11 and the fourth partial region A22 are located on both sides of the third region A30 in the direction parallel to the first straight line L1.

  The second partial region A12 and the third partial region A21 are located on both sides or one side of the third region A30 in the direction parallel to the second straight line L2. In the present embodiment, the second partial region A12 and the third partial region A21 are located on both sides of the third region A30 in the direction parallel to the second straight line L2.

  The first partial region A11 and the fourth partial region A22 are located on one side of the third region A30 in the direction parallel to the first straight line L1, and the second partial region A12 and the third partial region An example in which A21 is located on one side of the third region A30 in the direction parallel to the second straight line L2 will be described later as a fourth embodiment.

  In the present embodiment, in particular, the first partial region A11 and the second partial region A12 are the first partial region centered on the center of gravity C30 of the third region A30 when viewed from the third direction (Z direction). When A11 is rotated by 90 °, the positional relationship is overlapped with the second partial region A12. In addition, the third partial region A21 and the fourth partial region A22 rotate the third partial region A21 by 90 ° around the center of gravity C30 of the third region A30 when viewed from the third direction (Z direction). Then, the positional relationship overlaps with the fourth partial region A22.

  As shown in FIG. 1, the magnetic sensor 1 further includes a plurality of terminals disposed on or above the upper surface 51 a of the substrate 51. The plurality of terminals include a power supply terminal Vx and output terminals Vx1 and Vx2 corresponding to the first detection unit 10, a power supply terminal Vy and output terminals Vy1 and Vy2 corresponding to the second detection unit 20, and a third detection. The power supply terminal Vz and the output terminals Vz + and Vz− corresponding to the unit 30 and the ground terminal G commonly used in the first to third detection units 10, 20 and 30 are included.

  The magnetic sensor 1 further includes two arithmetic circuits 15 and 25 and two output ports 16 and 26. The arithmetic circuits 15 and 25 and the output ports 16 and 26 will be described in detail later.

  Next, with reference to FIG. 2 and FIG. 3, the structure of the 1st and 2nd parts 11 and 12 of the 1st detection part 10, and the 3rd and 4th parts 21 and 22 of the 2nd detection part 20 is demonstrated. An example will be described. The first portion 11 of the first detection unit 10 includes two resistance units Rx1 and Rx2 that constitute a half-bridge circuit, and the second portion 12 of the first detection unit 10 includes two resistors that constitute a half-bridge circuit. Resistors Rx3 and Rx4 are included. The third portion 21 of the second detection unit 20 includes two resistance units Ry1 and Ry2 that form a half-bridge circuit, and the fourth portion 22 of the second detection unit 20 forms a half-bridge circuit. Two resistance parts Ry3 and Ry4 are included. FIG. 2 also shows wiring relating to the first detection unit 10. FIG. 3 also shows wiring relating to the second detection unit 20.

  Each of the resistance portions Rx1, Rx2, Rx3, and Rx4 has a resistance value that changes in accordance with a component in a direction parallel to the first direction (X direction) of the external magnetic field. As shown in FIG. 2, the resistor portion Rx1 is provided between the power supply terminal Vx and the output terminal Vx1. The resistor portion Rx2 is provided between the output terminal Vx1 and the ground terminal G. The resistor Rx3 is provided between the power supply terminal Vx and the output terminal Vx2. The resistor portion Rx4 is provided between the output terminal Vx2 and the ground terminal G.

  Each of the resistance portions Ry1, Ry2, Ry3, and Ry4 has a resistance value that changes in accordance with a component in a direction parallel to the second direction (Y direction) of the external magnetic field. As illustrated in FIG. 3, the resistor Ry1 is provided between the power supply terminal Vy and the output terminal Vy1. The resistor portion Ry2 is provided between the output terminal Vy1 and the ground terminal G. The resistor Ry3 is provided between the power supply terminal Vy and the output terminal Vy2. The resistor Ry4 is provided between the output terminal Vy2 and the ground terminal G.

  As shown in FIG. 9, the third detection unit 30 includes four resistance units Rz1, Rz2, Rz3, and Rz4. FIG. 4 shows wiring related to the third detection unit 30. As shown in FIG. 9, the resistor Rz1 is provided between the power supply terminal Vz and the output terminal Vz +. The resistor portion Rz2 is provided between the output terminal Vz + and the ground terminal G. The resistor Rz3 is provided between the power supply terminal Vz and the output terminal Vz−. The resistor Rz4 is provided between the output terminal Vz− and the ground terminal G.

  Hereinafter, any one of the resistor portions Rx1, Rx2, Rx3, Rx4, Ry1, Ry2, Ry3, Ry4, Rz1, Rz2, Rz3, Rz4 is referred to as a resistor portion R. The resistance portion R includes at least one magnetic detection element. Particularly in the present embodiment, the at least one magnetic detection element is at least one magnetoresistance effect element. Hereinafter, the magnetoresistive effect element is referred to as an MR element.

  Particularly in the present embodiment, the MR element is a spin valve MR element. This spin-valve MR element includes a magnetization fixed layer having a magnetization whose direction is fixed, a free layer having a magnetization whose direction can be changed according to the direction of an applied magnetic field, and a magnetization layer between the magnetization fixed layer and the free layer. And a gap layer disposed thereon. The spin valve MR element may be a TMR (tunnel magnetoresistive) element or a GMR (giant magnetoresistive) element. In the TMR element, the gap layer is a tunnel barrier layer. In the GMR element, the gap layer is a nonmagnetic conductive layer. In a spin-valve MR element, the resistance value changes according to the angle formed by the magnetization direction of the free layer with respect to the magnetization direction of the magnetization fixed layer, and the resistance value becomes the minimum value when this angle is 0 °. When the angle is 180 °, the resistance value becomes the maximum value. In each MR element, the free layer has shape anisotropy in which the easy axis direction is perpendicular to the magnetization direction of the magnetization fixed layer.

  In FIGS. 2 and 3, solid arrows indicate the direction of magnetization of the magnetization fixed layer in the MR element. In the example shown in FIGS. 2 and 3, the magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Rx1 is the X direction. The magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Rx2 is the −X direction. In this case, the potential of the output terminal Vx1 changes with a change in the component in the direction parallel to the first direction (X direction) of the external magnetic field. The first portion 11 generates a detection value Sx1 corresponding to the potential of the output terminal Vx1. The detection value Sx1 corresponds to a component in a direction parallel to the first direction (X direction) of the external magnetic field.

  Further, the magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Rx3 is the X direction. The magnetization direction of the magnetization fixed layer of the MR element in the resistor portion Rx4 is the −X direction. In this case, the potential of the output terminal Vx2 changes with a change in the component of the external magnetic field in the direction parallel to the first direction (X direction). The second portion 12 generates a detection value Sx2 corresponding to the potential of the output terminal Vx2. The detection value Sx2 corresponds to a component in a direction parallel to the first direction (X direction) of the external magnetic field.

  In the present embodiment, in particular, the first and second portions 11 and 12 have both detected values Sx1 and Sx2 that are detected by the change in the component in the direction parallel to the first direction (X direction) of the external magnetic field. It is configured to increase or decrease together. The detection values Sx1 and Sx2 may be obtained by adjusting the amplitude and offset of the potentials of the output terminals Vx1 and Vx2, respectively.

  Further, the magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Ry1 is the Y direction. The magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Ry2 is the -Y direction. In this case, the potential of the output terminal Vy1 changes with a change in the component of the external magnetic field in the direction parallel to the second direction (Y direction). The third portion 21 generates a detection value Sy1 corresponding to the potential of the output terminal Vy1. The detection value Sy1 corresponds to a component in a direction parallel to the second direction (Y direction) of the external magnetic field.

  Further, the magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Ry3 is the Y direction. The magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Ry4 is the -Y direction. In this case, the potential of the output terminal Vy2 changes with a change in the component of the external magnetic field in the direction parallel to the second direction (Y direction). The fourth portion 22 generates a detection value Sy2 corresponding to the potential of the output terminal Vy2. The detection value Sy2 corresponds to a component in a direction parallel to the second direction (Y direction) of the external magnetic field.

  In the present embodiment, in particular, the third and fourth portions 21 and 22 have both the detected values Sy1 and Sy2 as the component values change in the direction parallel to the second direction (Y direction) of the external magnetic field. It is configured to increase or decrease together. The detection values Sy1 and Sy2 may be obtained by adjusting the amplitude and offset of the potentials of the output terminals Vy1 and Vy2, respectively.

  The direction of magnetization of the magnetization fixed layer of the MR element in each of the resistance portions Rz1, Rz2, Rz3, and Rz4 will be described later.

  Next, an example of the configuration of the MR element will be described with reference to FIG. The MR element 100 shown in FIG. 5 includes an antiferromagnetic layer 101, a magnetization fixed layer 102, a gap layer 103, and a free layer 104, which are sequentially stacked from the substrate 51 side. The antiferromagnetic layer 101 is made of an antiferromagnetic material and causes exchange coupling with the magnetization fixed layer 102 to fix the magnetization direction of the magnetization fixed layer 102.

  The arrangement of the layers 101 to 104 in the MR element 100 may be upside down from the arrangement shown in FIG. Further, the MR element 100 may be configured not to include the antiferromagnetic layer 101. This configuration includes, for example, an artificial antiferromagnetic structure including two ferromagnetic layers and a nonmagnetic metal layer disposed between the two ferromagnetic layers instead of the antiferromagnetic layer 101 and the pinned magnetization layer 102. The structure including a magnetization fixed layer of may be sufficient. The magnetic detection element may be an element that detects a magnetic field other than the MR element, such as a Hall element or a magnetic impedance element.

  Next, an example of the configuration of the resistance unit R will be described with reference to FIG. In this example, the resistance portion R includes a plurality of MR elements 100 connected in series. The resistance portion R further includes one or more connection layers that electrically connect two MR elements 100 adjacent to each other in the circuit configuration so that the plurality of MR elements 100 are connected in series. In the example illustrated in FIG. 6, the resistance portion R includes one or more lower connection layers 111 and one or more upper connection layers 112 as one or more connection layers. The lower connection layer 111 is in contact with the lower surfaces of two adjacent MR elements 100 in terms of circuit configuration, and electrically connects the two MR elements 100. The upper connection layer 112 is in contact with the upper surfaces of two adjacent MR elements 100 in terms of circuit configuration, and electrically connects the two MR elements 100.

  Next, an example of the structure of the first to third detection units 10, 20, and 30 will be described with reference to FIG. FIG. 7 shows a part of each of the first to third detection units 10, 20, 30. In this example, the first to third detection units 10, 20, and 30 are disposed on the substrate 51. The substrate 51 has an upper surface 51a and a lower surface 51b.

  The first detection unit 10 includes insulating layers 66A, 67A, and 68A made of an insulating material in addition to the resistance units Rx1, Rx2, Rx3, and Rx4, respectively. The insulating layer 66 </ b> A is disposed on the upper surface 51 a of the substrate 51. The resistance portions Rx1, Rx2, Rx3, and Rx4 are disposed on the insulating layer 66A. FIG. 7 shows one of the plurality of MR elements 100 included in the resistance portions Rx1, Rx2, Rx3, and Rx4, and the lower connection layer 111 and the upper connection layer 112 connected to the MR element 100. The insulating layer 67A is disposed on the upper surface 51a of the substrate 51 around the resistor portions Rx1, Rx2, Rx3, and Rx4. The insulating layer 68A covers the resistance portions Rx1, Rx2, Rx3, Rx4 and the insulating layer 67A.

  The structure of the second detection unit 20 is the same as that of the first detection unit 10. That is, the second detection unit 20 includes insulating layers 66B, 67B, and 68B made of an insulating material in addition to the resistance units Ry1, Ry2, Ry3, and Ry4. The insulating layer 66B is disposed on the upper surface 51a of the substrate 51. The resistance portions Ry1, Ry2, Ry3, and Ry4 are disposed on the insulating layer 66B. FIG. 7 shows one of the plurality of MR elements 100 included in the resistance portions Ry1, Ry2, Ry3, and Ry4, and the lower connection layer 111 and the upper connection layer 112 connected to the MR element 100. The insulating layer 67B is disposed around the resistance portions Ry1, Ry2, Ry3, and Ry4 on the upper surface 51a of the substrate 51. The insulating layer 68B covers the resistance portions Ry1, Ry2, Ry3, Ry4 and the insulating layer 67B.

  The third detection unit 30 includes resistance units Rz1, Rz2, Rz3, Rz4, a soft magnetic structure 40, and insulating layers 61, 62, 63, 64. In the example shown in FIG. 7, the soft magnetic structure 40 includes a magnetic field converter 42 and two soft magnetic layers 41 and 43.

  The magnetic field conversion unit 42 includes a plurality of lower yokes 42B and a plurality of upper yokes 42T. FIG. 7 shows one of the plurality of lower yokes 42B and one of the plurality of upper yokes 42T.

  The soft magnetic layer 41 is disposed on the upper surface 51 a of the substrate 51. The plurality of lower yokes 42 </ b> B are disposed on the soft magnetic layer 41. The insulating layer 61 is disposed around the plurality of lower yokes 42 </ b> B on the upper surface 51 a of the substrate 51.

  The resistance portions Rz1, Rz2, Rz3, and Rz4 are disposed on the insulating layer 61. FIG. 7 shows one of the plurality of MR elements 100 included in the resistance portions Rz1, Rz2, Rz3, and Rz4, and the lower connection layer 111 and the upper connection layer 112 connected thereto. The insulating layer 62 is disposed around the resistor portions Rz1, Rz2, Rz3, and Rz4 on the plurality of lower yokes 42B and the insulating layer 61.

  The plurality of upper yokes 42T are disposed on the insulating layer 62. The insulating layer 63 is disposed around the plurality of upper yokes 42T on the resistance portions Rz1, Rz2, Rz3, Rz4 and the insulating layer 62.

  The soft magnetic layer 43 is disposed on the plurality of upper yokes 42T and the insulating layer 63. The insulating layer 64 covers the soft magnetic layer 43.

  When viewed from above, the soft magnetic layers 41 and 43 exist over the entire area of the third detection unit 30. In other words, the region where the soft magnetic layer 41 is perpendicularly projected onto the upper surface 51a of the substrate 51, that is, the reference plane RP, and the region where the soft magnetic layer 43 is perpendicularly projected onto the reference plane RP are both the third region. It matches A30. The third region A30 is also a region formed by vertically projecting the soft magnetic structure 40 on the reference plane RP.

  In the example shown in FIG. 7, all the magnetic detection elements included in the first to third detection units 10, 20, 30, that is, the MR element 100, are located at the same distance from the upper surface 51 a of the substrate 51, ie, the reference plane RP. Has been placed.

  Note that the magnetic field conversion unit 42 may include only one of the plurality of lower yokes 42B and the plurality of upper yokes 42T. The soft magnetic structure 40 may include only one of the soft magnetic layers 41 and 43.

  Next, an example of the circuit configuration of the arithmetic circuits 15 and 25, the output ports 16 and 26, and the first and second detection units 10 and 20 will be described with reference to FIG. FIG. 8 shows circuits related to the first and second detection units 10 and 20. The arithmetic circuit 15 has two input ends and one output end. Two input terminals of the arithmetic circuit 15 are connected to output terminals Vx1 and Vx2, respectively. The output terminal of the arithmetic circuit 15 is connected to the output port 16.

  The arithmetic circuit 25 has two input ends and one output end. Two input ends of the arithmetic circuit 25 are connected to output terminals Vy1 and Vy2, respectively. The output terminal of the arithmetic circuit 25 is connected to the output port 26.

  The arithmetic circuit 15 corresponds to the first arithmetic circuit in the present invention. The arithmetic circuit 15 calculates the first external magnetic field by the calculation using the detection value Sx1 of the first part 11 of the first detection unit 10 and the detection value Sx2 of the second part 12 of the first detection unit 10. A first detection value Sx corresponding to a component in a direction parallel to the direction (X direction) is generated. In the present embodiment, in particular, the calculation by the calculation circuit 15 includes obtaining the sum of the detection value Sx1 and the detection value Sx2. The calculation by the calculation circuit 15 may include multiplying a predetermined coefficient or adding or subtracting a predetermined value after obtaining the sum of the detection value Sx1 and the detection value Sx2. The output port 16 outputs the first detection value Sx.

  The arithmetic circuit 25 corresponds to the second arithmetic circuit in the present invention. The arithmetic circuit 25 calculates the second external magnetic field by the calculation using the detection value Sy1 of the third part 21 of the second detection unit 20 and the detection value Sy2 of the fourth part 22 of the second detection unit 20. A second detection value Sy corresponding to a component in a direction parallel to the direction (Y direction) is generated. Particularly in the present embodiment, the calculation by the calculation circuit 25 includes obtaining the sum of the detection value Sy1 and the detection value Sy2. The calculation by the calculation circuit 25 may include multiplying a predetermined coefficient or adding or subtracting a predetermined value after obtaining the sum of the detection value Sy1 and the detection value Sy2. The output port 26 outputs the second detection value Sy.

  Next, an example of the configuration of the magnetic field conversion unit 42 of the third detection unit 30 will be described with reference to FIG. In this example, the magnetic field converter 42 includes four lower yokes 42B1, 42B2, 42B3, 42B4 as the plurality of lower yokes 42B, and four upper yokes 42T1, 42T2, 42T3 as the plurality of upper yokes 42T. 42T4 is included. Each of the lower yokes 42B1, 42B2, 42B3, 42B4 and the upper yokes 42T1, 42T2, 42T3, 42T4 has a rectangular parallelepiped shape that is long in a direction perpendicular to the Z direction.

  The lower yoke 42B1 and the upper yoke 42T1 are disposed in the vicinity of the resistance portion Rz1. The lower yoke 42B1 is disposed at a position closer to the upper surface 51a of the substrate 51 than the resistance portion Rz1. The upper yoke 42T1 is disposed at a position farther from the upper surface 51a of the substrate 51 than the resistor portion Rz1. When viewed from above, the resistor portion Rz1 is located between the lower yoke 42B1 and the upper yoke 42T1.

  The lower yoke 42B2 and the upper yoke 42T2 are disposed in the vicinity of the resistance portion Rz2. The lower yoke 42B2 is disposed closer to the upper surface 51a of the substrate 51 than the resistor portion Rz2. The upper yoke 42T2 is disposed at a position farther from the upper surface 51a of the substrate 51 than the resistor portion Rz2. When viewed from above, the resistance portion Rz2 is located between the lower yoke 42B2 and the upper yoke 42T2.

  The lower yoke 42B3 and the upper yoke 42T3 are disposed in the vicinity of the resistor portion Rz3. The lower yoke 42B3 is disposed at a position closer to the upper surface 51a of the substrate 51 than the resistance portion Rz3. The upper yoke 42T3 is disposed at a position farther from the upper surface 51a of the substrate 51 than the resistor portion Rz3. When viewed from above, the resistance portion Rz3 is located between the lower yoke 42B3 and the upper yoke 42T3.

  The lower yoke 42B4 and the upper yoke 42T4 are disposed in the vicinity of the resistance portion Rz4. The lower yoke 42B4 is disposed at a position closer to the upper surface 51a of the substrate 51 than the resistance portion Rz4. The upper yoke 42T4 is disposed at a position farther from the upper surface 51a of the substrate 51 than the resistor portion Rz4. When viewed from above, the resistance portion Rz4 is located between the lower yoke 42B4 and the upper yoke 42T4.

  The output magnetic field component output from the magnetic field converter 42 is generated by the lower yoke 42B1 and the upper yoke 42T1 and applied to the resistor Rz1, and is generated by the lower yoke 42B2 and the upper yoke 42T2 and applied to the resistor Rz2. Magnetic field components generated by the lower yoke 42B3 and the upper yoke 42T3 and applied to the resistance portion Rz3, and magnetic field components generated by the lower yoke 42B4 and the upper yoke 42T4 and applied to the resistance portion Rz4. It is out.

  In FIG. 9, four white arrows represent the directions of the magnetic field components applied to the resistance portions Rz1, Rz2, Rz3, and Rz4, respectively, when the direction of the input magnetic field component is the Z direction. In FIG. 9, four filled arrows represent the directions of magnetization of the magnetization fixed layer 102 of the MR element 100 of the resistance portions Rz1, Rz2, Rz3, and Rz4, respectively. The magnetization direction of the magnetization fixed layer 102 of the MR element 100 of the resistance portions Rz1 and Rz4 is the same as the direction of the magnetic field component applied to the resistance portions Rz1 and Rz4 when the direction of the input magnetic field component is the Z direction, respectively. It is. The magnetization direction of the magnetization fixed layer 102 of the MR element 100 of the resistance portions Rz2 and Rz3 is opposite to the direction of the magnetic field component applied to the resistance portions Rz2 and Rz3 when the direction of the input magnetic field component is the Z direction, respectively. Direction.

  Here, the operation of the third detection unit 30 will be described. In the state where the input magnetic field component does not exist, the magnetization direction of the free layer 104 of the MR element 100 of the resistance portions Rz1, Rz2, Rz3, and Rz4 is perpendicular to the magnetization direction of the magnetization fixed layer 102.

  When the direction of the input magnetic field component is the Z direction, in the MR element 100 of the resistance parts Rz1 and Rz4, the magnetization direction of the free layer 104 is fixed from the direction perpendicular to the magnetization direction of the magnetization fixed layer 102. The layer 102 is inclined toward the direction of magnetization. At this time, in the MR element 100 of the resistance portions Rz2 and Rz3, the magnetization direction of the free layer 104 is opposite to the magnetization direction of the magnetization fixed layer 102 from the direction perpendicular to the magnetization direction of the magnetization fixed layer 102. Tilt in the direction. As a result, the resistance values of the resistance portions Rz1 and Rz4 are decreased and the resistance values of the resistance portions Rz2 and Rz3 are increased as compared with a state where no input magnetic field component is present.

  When the direction of the input magnetic field component is in the −Z direction, the resistance values of the resistance parts Rz1 and Rz4 increase as compared with the case where the input magnetic field component does not exist. The resistance value decreases.

  The amount of change in the resistance values of the resistance parts Rz1, Rz2, Rz3, Rz4 depends on the strength of the input magnetic field component.

  When the direction and intensity of the input magnetic field component are changed, the resistance values of the resistance portions Rz1, Rz2, Rz3, and Rz4 increase the resistance values of the resistance portions Rz1, Rz4 and the resistance values of the resistance portions Rz2, Rz3, respectively. Alternatively, the resistance values of the resistance portions Rz1 and Rz4 change so as to decrease and the resistance values of the resistance portions Rz2 and Rz3 increase. As a result, the potential difference between the output terminal Vz + and the output terminal Vz− changes. Therefore, the input magnetic field component can be detected based on this potential difference.

  Next, the operation and effect of the magnetic sensor 1 according to the present embodiment will be described. In the magnetic sensor 1 according to the present embodiment, the first detector 10 detects a component of the external magnetic field in a direction parallel to the first direction (X direction), and the second detector 20 detects the external magnetic field. A component in a direction parallel to the second direction (Y direction) is detected. Hereinafter, the direction parallel to the first direction (X direction) is also referred to as the magnetic sensing direction of the first detection unit 10, and the direction parallel to the second direction (Y direction) is the magnetic detection of the second detection unit 20. Also called direction.

  The third detection unit 30 detects an input magnetic field component that is a component in a direction parallel to the third direction (Z direction) of the external magnetic field by the above-described action. The third detection unit 30 includes a soft magnetic structure 40. The soft magnetic structure 40 includes a magnetic field converter 42 and two soft magnetic layers 41 and 43. The soft magnetic structure 40 has a function of collecting a magnetic flux corresponding to a magnetic field in a direction parallel to the reference plane RP. The soft magnetic structure 40 affects the magnetic field applied to each of the first detection unit 10 and the second detection unit 20. Therefore, depending on the arrangement of the first to third detection units 10, 20, and 30, the output characteristics of the first detection unit 10 and the second detection unit 20 may be greatly different due to the soft magnetic structure 40. There is sex.

  In the present embodiment, the first partial region A11 and the fourth partial region A22 are located on both sides of the third region A30 in the direction parallel to the first straight line L1, and the second partial region A12 and the second partial region A22 The three partial regions A21 are located on both sides of the third region A30 in the direction parallel to the second straight line L2. Thereby, according to this Embodiment, it can suppress that the characteristic of the output of the 1st detection part 10 and the 2nd detection part 20 resulting from the soft-magnetic structure 40 differs. This will be described in detail below.

  First, the influence of the soft magnetic structure 40 on the detection values Sx1 and Sx2 will be described. FIG. 10 shows a state in which an external magnetic field in the X direction is applied to the magnetic sensor 1. In FIG. 10, a plurality of curves with arrows schematically represent the magnetic flux in the vicinity of the third region A30. As described above, the soft magnetic structure 40 included in the third detection unit 30 has a function of collecting a magnetic flux corresponding to a magnetic field in a direction parallel to the reference plane RP.

  FIG. 11 schematically shows the influence of the action of the soft magnetic structure 40 on the detection values Sx1 and Sx2. In FIG. 11, the magnitudes of the detection values Sx1, Sx2 are represented by positions on a straight line extending in the vertical direction in FIG. In the present embodiment, the variable ranges of the detection values Sx1 and Sx2 are equal, and the intermediate values of the variable ranges are also equal. In FIG. 11, symbol Sxc represents an intermediate value in the variable range of the detection values Sx1 and Sx2.

  In the present embodiment, when the external magnetic field includes a component in a direction parallel to the X direction, the detection values Sx1 and Sx2 are both larger than the intermediate value Sxc, or both are larger than the intermediate value Sxc. Either small.

  In the present embodiment, when the soft magnetic structure 40 is present, the magnetic flux density in one of the first portion 11 and the second portion 12 is increased as compared with the case without the soft magnetic structure 40. The magnetic flux density in the other of the first part 11 and the second part 12 decreases. Of the first part 11 and the second part 12, the detected value Sx1 or Sx2 moves away from the intermediate value Sxc when the magnetic flux density increases compared to the case where the soft magnetic structure 40 is not provided. Of the first portion 11 and the second portion 12, the detected value Sx1 or Sx2 approaches the intermediate value Sxc in the direction where the magnetic flux density decreases compared to the case where the soft magnetic structure 40 is not provided. Therefore, when one of the detection values Sx1 and Sx2 moves away from the intermediate value Sxc, the other of the detection values Sx1 and Sx2 approaches the intermediate value Sxc as compared to the case without the soft magnetic structure 40. In addition, when the magnetic flux density in the 1st part 11 and the 2nd part 12 is equal, detection value Sx1, Sx2 is equal.

  FIG. 11 shows detection values Sx1 and Sx2 when an external magnetic field in the X direction is applied to the magnetic sensor 1 as an example. In this case, the detection values Sx1 and Sx2 are both larger than the intermediate value Sxc. Since the soft magnetic structure 40 is present, the detection value Sx1 is farther from the intermediate value Sxc and the detection value Sx2 is closer to the intermediate value Sxc than when the soft magnetic structure 40 is not present.

  Due to the presence of the soft magnetic structure 40, an error may occur in each of the detection values Sx1 and Sx2. However, in the present embodiment, the first detection value Sx is generated by an operation including obtaining the sum of the detection value Sx1 and the detection value Sx2. Thereby, according to this Embodiment, the error which arises in each of detection value Sx1, Sx2 can be canceled. Therefore, according to the present embodiment, the error that occurs in the first detection value Sx can be made smaller than the error that occurs in each of the detection values Sx1 and Sx2, regardless of the direction of the external magnetic field.

  In particular, the above effect is obtained when the first partial region A11 and the second partial region A12 rotate by 90 ° about the center of gravity C30 when viewed from the third direction (Z direction). This is remarkably exhibited by the positional relationship overlapping the second partial region A12.

  Next, the influence of the soft magnetic structure 40 on the detection values Sy1 and Sy2 will be described. FIG. 12 shows a state in which an external magnetic field in the Y direction is applied to the magnetic sensor 1. In FIG. 12, a plurality of curves with arrows schematically represent the magnetic flux in the vicinity of the third region A30. As described above, the soft magnetic structure 40 included in the third detection unit 30 has a function of collecting a magnetic flux corresponding to a magnetic field in a direction parallel to the reference plane RP.

  FIG. 13 schematically shows the influence of the action of the soft magnetic structure 40 on the detection values Sy1 and Sy2. In FIG. 13, the magnitudes of the detection values Sy1, Sy2 are represented by positions on a straight line extending in the vertical direction in FIG. In the present embodiment, the variable ranges of the detection values Sy1 and Sy2 are equal, and the intermediate values of the variable ranges are also equal. In FIG. 13, symbol Syc represents an intermediate value in the variable range of the detection values Sy1 and Sy2.

  In the present embodiment, when the external magnetic field includes a component in a direction parallel to the Y direction, the detection values Sy1 and Sy2 are both greater than the intermediate value Syc, or both are greater than the intermediate value Syc. Either small.

  In the present embodiment, the presence of the soft magnetic structure 40 increases the magnetic flux density in one of the third portion 21 and the fourth portion 22 as compared to the case without the soft magnetic structure 40. The magnetic flux density in the other of the third portion 21 and the fourth portion 22 decreases. Of the third portion 21 and the fourth portion 22, the detected value Sy1 or Sy2 is farther from the intermediate value Syc when the magnetic flux density is increased than when the soft magnetic structure 40 is not provided. Of the third portion 21 and the fourth portion 22, the detected value Sy1 or Sy2 approaches the intermediate value Syc when the magnetic flux density decreases compared to the case where the soft magnetic structure 40 is not provided. Therefore, when one of the detection values Sy1 and Sy2 moves away from the intermediate value Syc, the other of the detection values Sy1 and Sy2 approaches the intermediate value Syc as compared with the case where the soft magnetic structure 40 is not provided. In addition, when the magnetic flux density in the 3rd part 21 and the 4th part 22 is equal, detection value Sy1, Sy2 is equal.

  FIG. 13 shows detection values Sy1 and Sy2 when an external magnetic field in the Y direction is applied to the magnetic sensor 1 as an example. In this case, the detection values Sy1 and Sy2 are both larger than the intermediate value Syc. Since the soft magnetic structure 40 is present, the detection value Sy1 is farther from the intermediate value Syc and the detection value Sy2 is closer to the intermediate value Syc than when the soft magnetic structure 40 is not present.

  Due to the presence of the soft magnetic structure 40, an error may occur in each of the detection values Sy1 and Sy2. However, in the present embodiment, the second detection value Sy is generated by an operation including obtaining the sum of the detection value Sy1 and the detection value Sy2. Thereby, according to this Embodiment, the error which arises in each of detection value Sy1, Sy2 can be canceled. Therefore, according to the present embodiment, the error that occurs in the second detection value Sy can be made smaller than the error that occurs in each of the detection values Sy1 and Sy2, regardless of the direction of the external magnetic field.

  The above-described effect is particularly obtained when the third partial region A21 and the fourth partial region A22 rotate the third partial region A21 by 90 ° around the center of gravity C30 when viewed from the third direction (Z direction). This is remarkably exhibited by the positional relationship overlapping the fourth partial region A22.

  In the present embodiment, the first detection unit 10 and the second detection unit 20 change the output with respect to the output characteristics, specifically, the change in the angle formed by the direction of the external magnetic field with respect to the magnetic sensing direction. The characteristics are the same or nearly the same. Thus, according to the present embodiment, it is possible to suppress the output characteristics of the first detection unit 10 and the second detection unit 20 from being different due to the soft magnetic structure 40.

  In particular, the above-described effect is that all the magnetic detection elements, that is, the MR elements 100 included in the first to fourth portions 11, 12, 21, 22 and the third detection unit 30 are the upper surface 51 a of the substrate 51, that is, the reference plane. It is remarkably exhibited by being arranged at a position equal to the distance from the RP.

  In addition, the above-described effect is remarkably exhibited when the soft magnetic structure 40 includes at least one of the soft magnetic layers 41 and 43.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 14 is a circuit diagram showing a circuit related to the first detection unit in the magnetic sensor according to the present embodiment. FIG. 15 is a circuit diagram showing a circuit related to the second detection unit in the magnetic sensor according to the present embodiment.

  The magnetic sensor 1 according to the present embodiment is different from the first embodiment in the following points. In the present embodiment, the first portion 11 of the first detection unit 10 includes four resistor units Rx11, Rx12, which form a Wheatstone bridge circuit, instead of the resistor units Rx1 and Rx2 in the first embodiment. Rx13, Rx14 and the difference detector 13 are included. Each of the resistance portions Rx11, Rx12, Rx13, and Rx14 has a resistance value that changes in accordance with a component in a direction parallel to the first direction (X direction) of the external magnetic field. The difference detector 13 has a first input end, a second input end, and one output end. The resistor Rx11 is provided between the power supply terminal Vx and the first connection point CP1. The resistor portion Rx12 is provided between the first connection point CP1 and the ground terminal G. The resistor Rx13 is provided between the power supply terminal Vx and the second connection point CP2. The resistor portion Rx14 is provided between the second connection point CP2 and the ground terminal G. The first connection point CP1 and the second connection point CP2 are connected to the first input terminal and the second input terminal of the difference detector 13, respectively.

  The second portion 12 of the first detection unit 10 is different from the four resistance units Rx21, Rx22, Rx23, and Rx24 that constitute the Wheatstone bridge circuit in place of the resistance units Rx3 and Rx4 in the first embodiment. And a detector 14. Each of the resistance portions Rx21, Rx22, Rx23, and Rx24 has a resistance value that changes in accordance with a component in a direction parallel to the first direction (X direction) of the external magnetic field. The difference detector 14 has a first input end, a second input end, and one output end. The resistor Rx21 is provided between the power supply terminal Vx and the third connection point CP3. The resistor portion Rx22 is provided between the third connection point CP3 and the ground terminal G. The resistor Rx23 is provided between the power supply terminal Vx and the fourth connection point CP4. The resistor portion Rx24 is provided between the fourth connection point CP4 and the ground terminal G. The third connection point CP3 and the fourth connection point CP4 are connected to the first input terminal and the second input terminal of the difference detector 14, respectively.

  In the present embodiment, the two input ends of the arithmetic circuit 15 are connected to the output end of the difference detector 13 and the output end of the difference detector 14, respectively.

  The third portion 21 of the second detection unit 20 is different from the four resistance units Ry11, Ry12, Ry13, and Ry14 constituting the Wheatstone bridge circuit in place of the resistance units Ry1 and Ry2 in the first embodiment. Detector 23. Each of the resistance portions Ry11, Ry12, Ry13, and Ry14 has a resistance value that changes in accordance with a component in a direction parallel to the second direction (Y direction) of the external magnetic field. The difference detector 23 has a first input end, a second input end, and one output end. The resistor Ry11 is provided between the power supply terminal Vy and the fifth connection point CP5. The resistor Ry12 is provided between the fifth connection point CP5 and the ground terminal G. The resistor Ry13 is provided between the power supply terminal Vy and the sixth connection point CP6. The resistor Ry14 is provided between the sixth connection point CP6 and the ground terminal G. The fifth connection point CP5 and the sixth connection point CP6 are connected to the first input terminal and the second input terminal of the difference detector 23, respectively.

  The fourth portion 22 of the second detection unit 20 is different from the four resistance units Ry21, Ry22, Ry23, and Ry24 constituting the Wheatstone bridge circuit in place of the resistance units Ry3 and Ry4 in the first embodiment. And a detector 24. Each of the resistance portions Ry21, Ry22, Ry23, and Ry24 has a resistance value that changes according to a component in a direction parallel to the second direction (Y direction) of the external magnetic field. The difference detector 24 has a first input end, a second input end, and one output end. The resistor Ry21 is provided between the power supply terminal Vy and the seventh connection point CP7. The resistor portion Ry22 is provided between the seventh connection point CP7 and the ground terminal G. The resistor Ry23 is provided between the power supply terminal Vy and the eighth connection point CP8. The resistance unit Ry24 is provided between the eighth connection point CP8 and the ground terminal G. The seventh connection point CP7 and the eighth connection point CP8 are connected to the first input terminal and the second input terminal of the difference detector 24, respectively.

  In the present embodiment, the two input ends of the arithmetic circuit 25 are connected to the output end of the difference detector 23 and the output end of the difference detector 24, respectively.

  The configuration of each of the plurality of resistance units is the same as the configuration of the resistance unit R in the first embodiment. In other words, each of the plurality of resistance portions includes at least one magnetic detection element. The at least one magnetic sensing element is at least one MR element.

  In FIGS. 14 and 15, solid arrows indicate the direction of magnetization of the magnetization fixed layer in the MR element. In the example shown in FIG. 14, the magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Rx11 and Rx14 is the X direction, and the magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Rx12 and Rx13. Is the -X direction. In this case, the potential difference between the first connection point CP1 and the second connection point CP2 changes with the change in the component of the external magnetic field in the direction parallel to the first direction (X direction). The difference detector 13 outputs a detection value Sx1 corresponding to this potential difference. In this way, the first portion 11 generates the detection value Sx1. The detection value Sx1 corresponds to a component in a direction parallel to the first direction (X direction) of the external magnetic field.

  Further, the magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Rx21, Rx24 is the X direction. The magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Rx22 and Rx23 is the -X direction. In this case, the potential difference between the third connection point CP3 and the fourth connection point CP4 changes with a change in the component of the external magnetic field in the direction parallel to the first direction (X direction). The difference detector 14 outputs a detection value Sx2 corresponding to this potential difference. In this way, the second portion 12 generates the detection value Sx2. The detection value Sx2 corresponds to a component in a direction parallel to the first direction (X direction) of the external magnetic field.

  In the present embodiment, the first and second portions 11 and 12 are accompanied by a change in the component in the direction parallel to the first direction (X direction) of the external magnetic field, as in the first embodiment. The detection values Sx1 and Sx2 are both increased or decreased. The detection value Sx1 may be a value obtained by adjusting the amplitude or offset of the potential difference between the first connection point CP1 and the second connection point CP2. Similarly, the detection value Sx2 may be obtained by adjusting the amplitude or offset with respect to the potential difference between the third connection point CP3 and the fourth connection point CP4.

  In the example shown in FIG. 15, the magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Ry11 and Ry14 is the Y direction. The magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Ry12 and Ry13 is the -Y direction. In this case, the potential difference between the fifth connection point CP5 and the sixth connection point CP6 changes with a change in the component of the external magnetic field in the direction parallel to the second direction (Y direction). The difference detector 23 outputs a detection value Sy1 corresponding to this potential difference. In this way, the third portion 21 generates the detection value Sy1. The detection value Sy1 corresponds to a component in a direction parallel to the second direction (Y direction) of the external magnetic field.

  Further, the magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Ry21 and Ry24 is the Y direction. The magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Ry22 and Ry23 is the -Y direction. In this case, the potential difference between the seventh connection point CP7 and the eighth connection point CP8 changes with a change in the component of the external magnetic field in the direction parallel to the second direction (Y direction). The difference detector 24 outputs a detection value Sy2 corresponding to this potential difference. In this way, the fourth portion 22 generates the detection value Sy2. The detection value Sy2 corresponds to a component in a direction parallel to the second direction (Y direction) of the external magnetic field.

  In the present embodiment, the third and fourth portions 21 and 22 are accompanied by a change in the component in the direction parallel to the second direction (Y direction) of the external magnetic field, as in the first embodiment. The detection values Sy1, Sy2 are both increased or decreased. The detection value Sy1 may be a value obtained by adjusting the amplitude or offset of the potential difference between the fifth connection point CP5 and the sixth connection point CP6. Similarly, the detection value Sy2 may be obtained by adjusting the amplitude or offset of the potential difference between the seventh connection point CP7 and the eighth connection point CP8.

  Other configurations, operations, and effects in the present embodiment are the same as those in the first embodiment.

[Third Embodiment]
Next, a third embodiment of the present invention will be described. First, a schematic configuration of the magnetic sensor 1 according to the present embodiment will be described with reference to FIGS. 16 to 18. FIG. 16 is an explanatory diagram showing the configurations of the first and second detection units and the wiring relating to the first detection unit in the magnetic sensor according to the present embodiment. FIG. 17 is an explanatory diagram showing configurations of the first and second detection units and wirings related to the second detection unit in the magnetic sensor according to the present embodiment. FIG. 18 is a circuit diagram showing circuits related to the first and second detection units in the magnetic sensor according to the present embodiment.

  The magnetic sensor 1 according to the present embodiment is different from the first embodiment in the following points. In the present embodiment, the output terminals Vx1, Vx2, Vy1, and Vy2 in the first embodiment are replaced with output terminals Vx +, Vx−, Vy +, and Vy−, respectively.

  In the present embodiment, the first portion 11 of the first detection unit 10 generates a detection value Sx + corresponding to the potential of the output terminal Vx +. The second portion 12 of the first detection unit 10 generates a detection value Sx− corresponding to the potential of the output terminal Vx−. Note that the detection values Sx + and Sx− may be values obtained by adjusting the amplitude and offset of the potentials of the output terminals Vx + and Vx−, respectively.

  In the present embodiment, the third portion 21 of the second detection unit 20 generates the detection value Sy + corresponding to the potential of the output terminal Vy +. The fourth portion 22 of the second detection unit 20 generates a detection value Sy− corresponding to the potential of the output terminal Vy−. The detection values Sy + and Sy− may be values obtained by adjusting the amplitude and offset of the potentials of the output terminals Vy + and Vy−, respectively.

  In the present embodiment, the magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Rx3 and Rx4 included in the second portion 12 is opposite to that in the first embodiment. That is, as shown in FIGS. 16 and 18, the magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Rx3 is the −X direction. The magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Rx4 is the X direction. Note that the magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Rx1 and Rx2 included in the first portion 11 is the same as in the first embodiment. Thereby, in this Embodiment, the 1st and 2nd parts 11 and 12 of the 1st detection part 10 are accompanying the change of the component of a direction parallel to the 1st direction (X direction) of an external magnetic field. , One of the detection value Sx + and the detection value Sx− is increased and the other is decreased.

  In the present embodiment, the magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Ry3 and Ry4 included in the fourth portion 22 is opposite to that in the first embodiment. That is, as shown in FIGS. 17 and 18, the magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Ry3 is the −Y direction. The magnetization direction of the magnetization fixed layer of the MR element in the resistance portion Ry4 is the Y direction. Note that the magnetization direction of the magnetization fixed layer of the MR element in each of the resistance portions Ry1 and Ry2 included in the third portion 21 is the same as in the first embodiment. Thereby, in this Embodiment, the 3rd and 4th parts 21 and 22 of the 2nd detection part 20 are accompanying the change of the component of a direction parallel to the 2nd direction (Y direction) of an external magnetic field. , One of the detection value Sy + and the detection value Sy− is increased and the other is decreased.

  Further, the magnetic sensor 1 according to the present embodiment includes two arithmetic circuits 17, 27, two output ports 18, 26 instead of the arithmetic circuits 15, 25 and the output ports 16, 26 in the first embodiment. 28. The arithmetic circuit 17 has two input terminals and one output terminal. Two input ends of the arithmetic circuit 17 are connected to output terminals Vx + and Vx−, respectively. The output terminal of the arithmetic circuit 17 is connected to the output port 18.

  The arithmetic circuit 27 has two input ends and one output end. Two input terminals of the arithmetic circuit 27 are connected to output terminals Vy + and Vy−, respectively. The output terminal of the arithmetic circuit 27 is connected to the output port 28.

  The arithmetic circuit 17 corresponds to the first arithmetic circuit in the present invention. The arithmetic circuit 17 calculates the first external magnetic field by an operation using the detection value Sx + of the first part 11 of the first detection unit 10 and the detection value Sx− of the second part 12 of the first detection unit 10. The first detection value Sx corresponding to the component in the direction parallel to the direction (X direction) is generated. Particularly in the present embodiment, the calculation by the calculation circuit 17 includes obtaining a difference between the detection value Sx + and the detection value Sx−. The calculation by the calculation circuit 17 may include multiplying a predetermined coefficient or adding or subtracting a predetermined value after obtaining the difference between the detected value Sx + and the detected value Sx−. The output port 18 outputs the first detection value Sx.

  The arithmetic circuit 27 corresponds to the second arithmetic circuit in the present invention. The arithmetic circuit 27 calculates the second external magnetic field by calculation using the detection value Sy + of the third part 21 of the second detection unit 20 and the detection value Sy− of the fourth part 22 of the second detection unit 20. The second detection value Sy corresponding to the component in the direction parallel to the direction (Y direction) is generated. Particularly in the present embodiment, the calculation by the calculation circuit 27 includes obtaining a difference between the detection value Sy + and the detection value Sy−. The calculation by the calculation circuit 27 may include multiplying a predetermined coefficient or adding or subtracting a predetermined value after obtaining the difference between the detected value Sy + and the detected value Sy−. The output port 28 outputs the second detection value Sy.

  Next, the operation and effect of the magnetic sensor 1 according to the present embodiment will be described. First, the influence of the soft magnetic structure 40 on the detection values Sx + and Sx− will be described. As described in the first embodiment, the soft magnetic structure 40 included in the third detection unit 30 has an action of collecting a magnetic flux corresponding to a magnetic field in a direction parallel to the reference plane RP.

  FIG. 19 schematically shows the influence of the action of the soft magnetic structure 40 on the detection values Sx + and Sx−. In FIG. 19, the magnitudes of the detection values Sx + and Sx− are represented by positions on a straight line extending in the vertical direction in FIG. In the present embodiment, the variable ranges of the detection values Sx + and Sx− are equal, and the intermediate values of the variable ranges are also equal. In FIG. 19, symbol Sxc represents an intermediate value in the variable range of the detection values Sx + and Sx−.

  In the present embodiment, when the external magnetic field includes a component in a direction parallel to the X direction, one of the detection values Sx + and Sx− is larger than the intermediate value Sxc, and the other of the detection values Sx + and Sx−. Is smaller than the intermediate value Sxc.

  In the present embodiment, as in the first embodiment, the presence of the soft magnetic structure 40 causes the first portion 11 and the second portion 12 to be compared with the case where the soft magnetic structure 40 is not present. When the magnetic flux density in one of the two portions increases, the magnetic flux density in the other of the first portion 11 and the second portion 12 decreases. Of the first part 11 and the second part 12, the detected value Sx + or Sx− moves away from the intermediate value Sxc when the magnetic flux density increases compared to the case where the soft magnetic structure 40 is not provided. Of the first part 11 and the second part 12, the detected value Sx + or Sx− approaches the intermediate value Sxc when the magnetic flux density decreases compared to the case where there is no soft magnetic structure 40. Therefore, when one of the detection values Sx + and Sx− moves away from the intermediate value Sxc, the other of the detection values Sx + and Sx− approaches the intermediate value Sxc, compared to the case where the soft magnetic structure 40 is not provided. When the magnetic flux densities in the first portion 11 and the second portion 12 are equal, the absolute value of the detected value Sx + and the absolute value of the detected value Sx− are equal.

  FIG. 19 shows detection values Sx + and Sx− when an external magnetic field in the X direction is applied to the magnetic sensor 1 as an example. In this case, the detected value Sx + is larger than the intermediate value Sxc, and the detected value Sx− is smaller than the intermediate value Sxc. Then, the presence of the soft magnetic structure 40 causes the detected value Sx + to move away from the intermediate value Sxc and the detected value Sx− to approach the intermediate value Sxc, compared to the case without the soft magnetic structure 40.

  Due to the presence of the soft magnetic structure 40, an error may occur in each of the detection values Sx + and Sx−. However, in the present embodiment, the first detection value Sx is generated by an operation including obtaining the difference between the detection value Sx + and the detection value Sx−. Thereby, according to this Embodiment, the error which arises in each of detection value Sx +, Sx- can be canceled. Therefore, according to the present embodiment, the error that occurs in the first detection value Sx can be made smaller than the error that occurs in each of the detection values Sx + and Sx− regardless of the direction of the external magnetic field.

  Next, the influence of the soft magnetic structure 40 on the detection values Sy + and Sy− will be described. FIG. 20 schematically shows the influence of the action of the soft magnetic structure 40 described above on the detected values Sy + and Sy−. In FIG. 20, the magnitudes of the detection values Sy + and Sy− are represented by positions on a straight line extending in the vertical direction in FIG. In the present embodiment, the variable ranges of the detection values Sy + and Sy− are equal, and the intermediate values of the variable ranges are also equal. In FIG. 20, symbol Syc represents an intermediate value in the variable range of the detection values Sy + and Sy−.

  In the present embodiment, when the external magnetic field includes a component in a direction parallel to the Y direction, one of the detection values Sy + and Sy− is larger than the intermediate value Syc, and the other of the detection values Sy + and Sy−. Is smaller than the intermediate value Syc.

  In the present embodiment, as in the first embodiment, the presence of the soft magnetic structure 40 causes the third portion 21 and the fourth portion 22 to be compared with the case where the soft magnetic structure 40 is not present. When the magnetic flux density in one of the three portions increases, the magnetic flux density in the other of the third portion 21 and the fourth portion 22 decreases. Of the third portion 21 and the fourth portion 22, the detected value Sy + or Sy− moves away from the intermediate value Syc when the magnetic flux density increases compared to the case where the soft magnetic structure 40 is not provided. Of the third part 21 and the fourth part 22, the detected value Sy + or Sy− approaches the intermediate value Syc in the direction where the magnetic flux density decreases compared to the case where the soft magnetic structure 40 is not provided. Therefore, when one of the detection values Sy + and Sy− moves away from the intermediate value Syc, the other of the detection values Sy + and Sy− approaches the intermediate value Syc as compared with the case where the soft magnetic structure 40 is not provided. When the magnetic flux densities in the third portion 21 and the fourth portion 22 are equal, the absolute value of the detection value Sy + and the absolute value of the detection value Sy− are equal.

  FIG. 20 shows detected values Sy + and Sy− when an external magnetic field in the Y direction is applied to the magnetic sensor 1 as an example. In this case, the detected value Sy + is larger than the intermediate value Syc, and the detected value Sy− is smaller than the intermediate value Syc. Then, the presence of the soft magnetic structure 40 causes the detected value Sy + to move away from the intermediate value Syc, and the detected value Sy− approaches the intermediate value Syc, compared to the case without the soft magnetic structure 40.

  The presence of the soft magnetic structure 40 may cause an error in each of the detection values Sy + and Sy−. However, in the present embodiment, the second detection value Sy is generated by an operation including obtaining the difference between the detection value Sy + and the detection value Sy−. Thereby, according to this Embodiment, the error which arises in each of detection value Sy + and Sy- can be canceled. Therefore, according to the present embodiment, the error that occurs in the second detection value Sy can be made smaller than the error that occurs in each of the detection values Sy + and Sy− regardless of the direction of the external magnetic field.

  Other configurations, operations, and effects in the present embodiment are the same as those in the first embodiment.

[Fourth Embodiment]
Next, the fourth embodiment of the present invention will be described with reference to FIG. FIG. 21 is a plan view showing a schematic configuration of the magnetic sensor according to the present embodiment.

  In the present embodiment, the first partial region A11 and the fourth partial region A22 are located on one side of the third region A30 in the direction parallel to the first straight line L1. The second partial region A12 and the third partial region A21 are located on one side of the third region A30 in the direction parallel to the second straight line L2.

  In the present embodiment, the first partial region A11 and the second partial region A12 are the first portion centered on the center of gravity C30 of the third region A30 when viewed from the third direction (Z direction). When the region A11 is rotated by 90 °, the positional relationship is overlapped with the second partial region A12. In addition, the third partial region A21 and the fourth partial region A22 rotate the third partial region A21 by 90 ° around the center of gravity C30 of the third region A30 when viewed from the third direction (Z direction). Then, the positional relationship overlaps with the fourth partial region A22.

  The circuit configuration of the magnetic sensor 1 according to the present embodiment is the same as any one of the first to third embodiments. Other configurations, operations, and effects in the present embodiment are the same as those in any of the first to third embodiments.

  In addition, this invention is not limited to said each embodiment, A various change is possible. For example, the configuration of each of the first to third detection units is not limited to the example shown in each embodiment, and may be any configuration that satisfies the requirements of the claims.

  DESCRIPTION OF SYMBOLS 1 ... Magnetic sensor, 10 ... 1st detection part, 11 ... 1st part, 12 ... 2nd part, 15 ... 1st arithmetic circuit, 20 ... 2nd detection part, 21 ... 3rd part, 22 ... 4th part, 25 ... 2nd arithmetic circuit, 30 ... 3rd detection part, 40 ... Soft magnetic structure, 50 ... Support part, A10 ... 1st area | region, A11 ... 1st partial area | region, A12: second partial region, A20: second region, A21: third partial region, A22: fourth partial region, A30: third region.

Claims (10)

A first detector for detecting a component of the external magnetic field in a direction parallel to the first direction;
A second detector for detecting a component of the external magnetic field in a direction parallel to the second direction;
A soft magnetic structure made of a soft magnetic material;
A magnetic sensor comprising the first detection unit, the second detection unit, and a support unit that supports the soft magnetic structure,
The support portion has a reference plane orthogonal to the third direction,
The first to third directions are orthogonal to each other,
The reference plane includes a first region, a second region, and a third region that are different from each other,
The first region is a region formed by vertically projecting the first detection unit on the reference plane,
The second region is a region formed by vertically projecting the second detection unit on the reference plane,
The third region is a region formed by vertically projecting the soft magnetic structure on the reference plane,
The first detection unit includes a first part and a second part arranged at different positions,
The second detection unit includes a third part and a fourth part arranged at different positions,
Each of the first to fourth portions includes at least one magnetic detection element;
The first region includes a first partial region formed by vertically projecting the first portion on the reference plane, and a second partial region formed by vertically projecting the second portion on the reference plane. Including
The second region includes a third partial region formed by vertically projecting the third portion on the reference plane, and a fourth partial region formed by vertically projecting the fourth portion on the reference plane. Including
When two straight lines that pass through the center of gravity of the third region and are perpendicular to the third direction and orthogonal to each other are defined as a first straight line and a second straight line, the first partial region and the fourth straight line The partial regions are located on both sides or one side of the third region in a direction parallel to the first straight line, and the second partial region and the third partial region are parallel to the second straight line. Located on both sides or one side of the third region in the direction,
Each of the first and second portions generates a detection value corresponding to a component of the external magnetic field in a direction parallel to the first direction;
Each of the third and fourth portions generates a detection value corresponding to a component of the external magnetic field in a direction parallel to the second direction. The support includes a substrate having an upper surface;
The first detection unit, the second detection unit, and the soft magnetic structure are disposed on or above the upper surface of the substrate,
The magnetic sensor according to claim 1, wherein the reference plane is an upper surface of the substrate.   3. The magnetic sensor according to claim 1, wherein all of the magnetic detection elements included in the first to fourth portions are arranged at a distance equal to the reference plane.   The soft magnetic structure includes a magnetic field converter that receives a component in a direction parallel to a third direction of the external magnetic field and outputs an output magnetic field component in a direction perpendicular to the third direction. The magnetic sensor according to claim 1.   The magnetic sensor according to claim 1, wherein the soft magnetic structure includes at least one soft magnetic layer. When the first partial region and the second partial region are rotated by 90 ° about the center of gravity of the third region as viewed from the third direction, the second partial region Is a positional relationship that overlaps
The third partial region and the fourth partial region are obtained by rotating the third partial region by 90 ° about the center of gravity of the third region as viewed from the third direction. The magnetic sensor according to claim 1, wherein the magnetic sensor has a positional relationship overlapping with each other.   The magnetic sensor according to claim 1, wherein the at least one magnetic detection element is at least one magnetoresistive effect element.   Further, a first detection value that generates a first detection value corresponding to a component of the external magnetic field in a direction parallel to the first direction is calculated by using the detection values of the first and second portions. A second detection value corresponding to a component in a direction parallel to the second direction of the external magnetic field is generated by an arithmetic circuit and a calculation using the detection values of the third and fourth portions. The magnetic sensor according to claim 1, further comprising: 2 arithmetic circuits. In the first and second portions, the detected values of the first and second portions increase or decrease together with a change in the component of the external magnetic field in a direction parallel to the first direction. Configured to decrease,
In the third and fourth portions, the detected values of the third and fourth portions increase or decrease together with the change in the component of the external magnetic field in the direction parallel to the second direction. Configured to decrease,
The calculation by the first calculation circuit includes obtaining a sum of detection values of the first and second portions,
9. The magnetic sensor according to claim 8, wherein the calculation by the second calculation circuit includes obtaining a sum of detection values of the third and fourth portions. In the first and second portions, one of the detected values of the first and second portions increases as the component of the external magnetic field in a direction parallel to the first direction changes. Is configured to decrease,
In the third and fourth portions, one of the detected values of the third and fourth portions increases as the component of the external magnetic field in a direction parallel to the second direction increases. Is configured to decrease,
The calculation by the first calculation circuit includes obtaining a difference between detection values of the first and second portions,
9. The magnetic sensor according to claim 8, wherein the calculation by the second calculation circuit includes obtaining a difference between detection values of the third and fourth portions.