JP2019161030A - Piezoelectric element - Google Patents

Piezoelectric element Download PDF

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JP2019161030A
JP2019161030A JP2018046364A JP2018046364A JP2019161030A JP 2019161030 A JP2019161030 A JP 2019161030A JP 2018046364 A JP2018046364 A JP 2018046364A JP 2018046364 A JP2018046364 A JP 2018046364A JP 2019161030 A JP2019161030 A JP 2019161030A
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piezoelectric film
piezoelectric
slit
piezoelectric element
electrode
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博行 口地
Hiroyuki Kouchi
博行 口地
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New Japan Radio Co Ltd
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2207/00—Details of diaphragms or cones for electromechanical transducers or their suspension covered by H04R7/00 but not provided for in H04R7/00 or in H04R2307/00
    • H04R2207/021—Diaphragm extensions, not necessarily integrally formed, e.g. skirts, rims, flanges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2410/00—Microphones
    • H04R2410/03—Reduction of intrinsic noise in microphones

Abstract

To provide a piezoelectric element that maintains high acoustic resistance and suppresses a low-frequency sensitivity reduction and a signal-to-noise ratio reduction by suppressing an influence of residual stress of a piezoelectric film and solving the problem of limiting an outer shape.SOLUTION: A plate-like protrusions 7 is provided along a slit 6 on piezoelectric films 3a, 3b at least one end of which is supported and fixed to a support substrate 1 and the other end of which is a free end by forming the slit 6.SELECTED DRAWING: Figure 1

Description

本発明は圧電素子に関し、特に、高感度、低雑音の横圧電効果を利用した圧電素子に関するものである。   The present invention relates to a piezoelectric element, and more particularly to a piezoelectric element utilizing a high sensitivity, low noise lateral piezoelectric effect.

近年、急速に需要が拡大しているスマートフォンには、小型、薄型で、組立のハンダリフロー工程の高温処理耐性を有するＭＥＭＳ（Micro Electro Mechanical System）技術を用いたマイクロフォンが多く使われている。また、ＭＥＭＳマイクロフォンに限らず、その他のＭＥＭＳ素子が様々な分野で急速に普及してきている。   2. Description of the Related Art In recent years, smartphones whose demand has been rapidly expanding are often small-sized, thin-type microphones using MEMS (Micro Electro Mechanical System) technology having high-temperature processing resistance in an assembly solder reflow process. In addition to MEMS microphones, other MEMS elements are rapidly spreading in various fields.

この種のＭＥＭＳ素子の多くは、音響圧力等による振動板の振動変位を対向する固定板との容量変化としてとらえ、電気信号に変換して出力する容量素子である。しかし容量素子は、振動板と固定板との間隙の空気の流動によって生じる音響抵抗のために、信号雑音比の改善が限界になりつつある。   Most of this type of MEMS element is a capacitive element that detects a vibration displacement of a diaphragm due to an acoustic pressure or the like as a change in capacitance with an opposing fixed plate, converts it into an electric signal, and outputs it. However, improvement in the signal-to-noise ratio of the capacitive element is becoming a limit due to acoustic resistance generated by the flow of air in the gap between the diaphragm and the fixed plate.

そこで、圧電材料からなる薄膜（圧電膜）で構成される単一の振動板の歪みにより音響圧力等を電圧変化として取り出すことができる圧電素子が注目されている。   Accordingly, attention has been paid to a piezoelectric element that can take out acoustic pressure or the like as a voltage change by distortion of a single diaphragm formed of a thin film (piezoelectric film) made of a piezoelectric material.

ところで圧電素子では、音響圧力等がない場合に圧電膜の残留応力や温度変動が不要な信号として出力され特性を劣化させることが知られている。そこで、圧電膜の一端を自由端とする片持ち梁構造を採用することによって残留応力を解放する技術が開示されている（例えば特許文献１）。   By the way, it is known that the piezoelectric element is output as an unnecessary signal in which the residual stress and temperature fluctuation of the piezoelectric film are unnecessary when there is no acoustic pressure or the like, and the characteristics are deteriorated. Therefore, a technique for releasing residual stress by adopting a cantilever structure in which one end of the piezoelectric film is a free end is disclosed (for example, Patent Document 1).

図３に、片持ち梁構造の圧電素子の断面図を示す。図３に示すように、支持基板となるシリコン基板１に、絶縁膜２を介して多層構造の圧電膜３ａ、３ｂが固定され、圧電膜３ａは上下から電極４ａと電極４ｂにより、圧電膜３ｂは電極４ｂと電極４ｃによりそれぞれ挟み込まれた構造となっている。圧電膜および電極はそれぞれ長方形の平面形状を有しており、一端がシリコン基板１に固定され、他端が自由端となっている。また電極４ａと電極４ｃは一方の配線電極５ａに接続し、電極４ｂは別の配線電極５ｂに接続されている。   FIG. 3 shows a cross-sectional view of a piezoelectric element having a cantilever structure. As shown in FIG. 3, piezoelectric films 3a and 3b having a multilayer structure are fixed to a silicon substrate 1 serving as a support substrate via an insulating film 2, and the piezoelectric film 3a is formed by an electrode 4a and an electrode 4b from above and below. Has a structure sandwiched between the electrode 4b and the electrode 4c. Each of the piezoelectric film and the electrode has a rectangular planar shape, one end is fixed to the silicon substrate 1 and the other end is a free end. The electrodes 4a and 4c are connected to one wiring electrode 5a, and the electrode 4b is connected to another wiring electrode 5b.

このような圧電素子では、音響圧力等を受けて圧電膜３ａが歪むとその内部に分極が起こり、電極４ａに接続する配線電極５ａと、電極４ｂに接続する配線電極５ｂから電圧信号を取り出すことが可能となる。同様に圧電膜３ｂが歪むとその内部に分極が起こり、電極４ｃに接続する配線電極５ａと、電極４ｂに接続する配線電極５ｂから電圧信号を取り出すことが可能となる。   In such a piezoelectric element, when the piezoelectric film 3a is distorted by receiving an acoustic pressure or the like, polarization occurs in the piezoelectric film 3a, and a voltage signal is taken out from the wiring electrode 5a connected to the electrode 4a and the wiring electrode 5b connected to the electrode 4b. Is possible. Similarly, when the piezoelectric film 3b is distorted, polarization occurs in the piezoelectric film 3b, and a voltage signal can be extracted from the wiring electrode 5a connected to the electrode 4c and the wiring electrode 5b connected to the electrode 4b.

ところで、図３に示すような片持ち梁構造とすることで圧電膜の残留応力が解放されるが、その結果圧電膜が反り、隣接する圧電膜の間隙（スリット６）や圧電膜（梁）側面と支持基板の実質的間隙の寸法が広がってしまう。このような設計値以上の間隙の発生は、圧電素子をマイクロフォンとして使用した場合、音響抵抗を低下させ、低周波感度低下等の特性劣化を招いてしまう。   By the way, although the residual stress of the piezoelectric film is released by adopting the cantilever structure as shown in FIG. 3, as a result, the piezoelectric film warps, and the gap (slit 6) between adjacent piezoelectric films or the piezoelectric film (beam). The size of the substantial gap between the side surface and the support substrate increases. The generation of such a gap exceeding the design value reduces acoustic resistance when the piezoelectric element is used as a microphone, leading to characteristic deterioration such as low frequency sensitivity reduction.

そこでこの問題を解消するため、支持基板に正方形のバックチャンバーを形成し、図４に示すような十字状のスリット６を形成することで三角形の圧電膜に分離した構造の圧電素子が提案されている。このような構造の圧電素子では、４個の三角形のそれぞれの頂点が圧電膜３の中心に位置するような配置とすることで、残留応力によって圧電膜が反った場合でも、隣接する圧電膜にも同様の反りが発生し、結果的に隣接する圧電膜の間隙（スリット６）の寸法を大きく変化させないようにする技術が開示されている（特許文献２）。   In order to solve this problem, a piezoelectric element having a structure in which a square back chamber is formed on a support substrate and a cross-shaped slit 6 as shown in FIG. Yes. In the piezoelectric element having such a structure, by arranging each of the four triangles at the center of the piezoelectric film 3, even when the piezoelectric film warps due to residual stress, Has also been disclosed in which a similar warp occurs, and as a result, the size of the gap (slit 6) between adjacent piezoelectric films is not greatly changed (Patent Document 2).

特許第５７０７３２３号公報Japanese Patent No. 5707323 特表２０１４−５１５２１４号公報Special table 2014-515214 gazette

圧電膜の残留応力に起因する特性劣化を防止するため、従来の圧電素子では圧電膜の形状を三角形とし、４個の三角形の頂点を中心に集めるように配置することで隣接する圧電膜の間隙の幅の寸法を大きく変化させないことを可能とした。しかしながら、各三角形の圧電膜それぞれの共振周波数を合わせるため、同一形状の三角形を組み合わせる必要があり、圧電素子の外形が正方形に制限され、設計の自由度がないという問題があった。また、製造工程上一つの圧電素子内でも残留応力のばらつきが発生してしまい、４個の三角形の反りの程度がそれぞれ異なり、隣接する圧電膜の間隙の幅が設計値以上に広がってしまう等、量産レベルで隣接する圧電膜の間隙の幅を制御することは非常に困難であった。そこで本発明は、圧電膜の残留応力の影響を抑制するとともに外形が制限される問題を解消し、低周波感度の低下等の特性劣化を抑制した圧電素子を提供することを目的とする。   In order to prevent characteristic deterioration due to the residual stress of the piezoelectric film, in the conventional piezoelectric element, the shape of the piezoelectric film is a triangle, and the gaps between adjacent piezoelectric films are arranged by collecting the four triangles at the center. It was made possible not to greatly change the width dimension. However, in order to match the resonance frequency of each triangular piezoelectric film, it is necessary to combine triangles having the same shape, and there is a problem that the outer shape of the piezoelectric element is limited to a square and there is no degree of freedom in design. In addition, the residual stress varies even within one piezoelectric element during the manufacturing process, the degree of warping of the four triangles is different, and the width of the gap between adjacent piezoelectric films expands beyond the design value, etc. Therefore, it is very difficult to control the width of the gap between adjacent piezoelectric films at the mass production level. Accordingly, an object of the present invention is to provide a piezoelectric element that suppresses the influence of the residual stress of the piezoelectric film and solves the problem that the outer shape is limited, and suppresses characteristic deterioration such as a decrease in low-frequency sensitivity.

上記目的を達成するため、本願請求項１に係る発明は、圧電膜と、該圧電膜を挟んで配置する一対の電極と、前記圧電膜あるいは前記圧電膜および前記電極を貫通するスリットを備え、前記圧電膜の少なくとも一端が支持基板に支持され、他端が前記スリットにより自由端となる圧電素子において、前記圧電膜は、前記スリットに沿った突起部を備えていることを特徴とする。   In order to achieve the above object, an invention according to claim 1 of the present application includes a piezoelectric film, a pair of electrodes disposed with the piezoelectric film interposed therebetween, and the piezoelectric film or the piezoelectric film and a slit penetrating the electrode, In the piezoelectric element in which at least one end of the piezoelectric film is supported by a support substrate and the other end is a free end by the slit, the piezoelectric film includes a protrusion along the slit.

本発明の圧電素子はスリットに沿った突起部を圧電膜に形成することで、圧電膜の残留応力の影響を抑制しつつ、音響抵抗を低くする経路の幅を狭くし、音響抵抗を高く維持することができるため、低周波感度の低減や信号雑音比の低減を抑制することができる。   The piezoelectric element according to the present invention forms a protrusion along the slit in the piezoelectric film, thereby suppressing the influence of the residual stress of the piezoelectric film, narrowing the width of the path for reducing the acoustic resistance, and maintaining the acoustic resistance high. Therefore, it is possible to suppress a reduction in low frequency sensitivity and a reduction in signal to noise ratio.

本発明の第１の実施例の圧電素子の説明図である。It is explanatory drawing of the piezoelectric element of 1st Example of this invention. 本発明の第２の実施例の圧電素子の説明図である。It is explanatory drawing of the piezoelectric element of the 2nd Example of this invention. 従来の圧電素子の説明図である。It is explanatory drawing of the conventional piezoelectric element. 従来の別の圧電素子の説明図である。It is explanatory drawing of another conventional piezoelectric element.

本発明の圧電素子は、少なくとも一端を支持基板に支持固定し、スリットを形成することで他端が自由端となる圧電膜に、スリットに沿って突起部を形成する。以下、本発明の圧電素子について詳細に説明する。   In the piezoelectric element of the present invention, at least one end is supported and fixed to a support substrate, and a slit is formed to form a protrusion along the slit on the piezoelectric film having the other end as a free end. Hereinafter, the piezoelectric element of the present invention will be described in detail.

本発明の第１の実施例について説明する。図１は本発明の第１の実施例の説明図で、片持ち梁構造の圧電素子の断面図を示している。図１に示すように本実施例の圧電素子は、従来の圧電素子同様、支持基板となるシリコン基板１に絶縁膜２を介して多層構造の圧電膜３ａ、３ｂが支持固定され、各圧電膜は上下から電極４ａ、４ｂ、４ｃにより挟まれた形状となっている。電極４ａと電極４ｃは一方の配線電極５ａに接続し、電極４ｂは別の配線電極５ｂに接続されている。また、圧電膜はスリット６が形成され、圧電膜および電極はそれぞれ長方形の平面形状を有しており、一端がシリコン基板１に固定され、他端が自由端となっている。   A first embodiment of the present invention will be described. FIG. 1 is an explanatory view of a first embodiment of the present invention, and shows a cross-sectional view of a piezoelectric element having a cantilever structure. As shown in FIG. 1, in the piezoelectric element of this embodiment, as in the conventional piezoelectric element, piezoelectric films 3a and 3b having a multilayer structure are supported and fixed on a silicon substrate 1 serving as a supporting substrate via an insulating film 2. Is sandwiched between the electrodes 4a, 4b, 4c from above and below. The electrode 4a and the electrode 4c are connected to one wiring electrode 5a, and the electrode 4b is connected to another wiring electrode 5b. The piezoelectric film has slits 6 formed therein, and each of the piezoelectric film and the electrode has a rectangular planar shape. One end is fixed to the silicon substrate 1 and the other end is a free end.

ここで本発明では、圧電膜の自由端に、スリット６に沿った突起部７を備えたことを特徴としている。図１は、例えば突起部７がバックチャンバー８側に突出する構造を示している。   Here, the present invention is characterized in that a protrusion 7 along the slit 6 is provided at the free end of the piezoelectric film. FIG. 1 shows a structure in which, for example, the protrusion 7 projects to the back chamber 8 side.

このような構造の圧電素子は、スリットにより圧電膜の残留応力が解放され、圧電膜が反り、残留応力のばらつきにより隣接する圧電膜の反りの程度が異なってしまうが、圧電膜が反ることで、隣接する圧電膜に備えた突起部間の距離あるいは突起部と隣接する圧電膜との間の距離が実質的なスリットの幅となるため、従来の突起部が無い構造の圧電素子と比較して、実質的なスリットの幅つまり音響抵抗を低くする経路の幅が狭くなる。また、実質的なスリットの深さつまり音響抵抗の高い経路の長さが長くなる。   In the piezoelectric element having such a structure, the residual stress of the piezoelectric film is released by the slit, the piezoelectric film warps, and the degree of warpage of the adjacent piezoelectric film varies depending on the variation of the residual stress, but the piezoelectric film warps. Therefore, the distance between the protrusions on the adjacent piezoelectric film or the distance between the protrusions and the adjacent piezoelectric film is a substantial slit width, so it is compared with a conventional piezoelectric element having no protrusion. Thus, the substantial slit width, that is, the width of the path for reducing the acoustic resistance is narrowed. Further, the substantial slit depth, that is, the length of the path with high acoustic resistance is increased.

その結果、音響抵抗を高く保つことができ、圧電膜の残留応力の影響を抑制しつつ、低周波感度の低減や信号雑音比の低減を抑制することができる。   As a result, the acoustic resistance can be kept high, and the low frequency sensitivity and the signal to noise ratio can be suppressed while suppressing the influence of the residual stress of the piezoelectric film.

また、突起部をバックチャンバーと反対側に突出する構造としても、突起部と隣接する圧電膜との間の距離が実質的なスリットの幅となるため、従来の突起部が無い構造の圧電素子と比較して、実質的なスリットの幅が狭くなり、音響抵抗を高く維持することができる。   In addition, even if the protruding portion protrudes to the opposite side of the back chamber, the distance between the protruding portion and the adjacent piezoelectric film becomes a substantial slit width, so that the piezoelectric element having a conventional structure without the protruding portion As compared with, the width of the substantial slit is narrowed, and the acoustic resistance can be kept high.

なお、突起部７の長さは、圧電膜３ａ、３ｂ等からなる振動板が振動変位する際、相互に接触しない程度に設定すれば良い。また、図１に示す例では、突起部７は圧電膜がシリコン基板１に固定された一端とは反対側の自由端に形成した例を示しているが、この突起部７の延出方向と垂直に交わる方向に形成されたスリットに、突起部７を形成することができる。ただし、この場合には、突起部７を形成することで振動板の振動変位を妨げない様に配置する必要がある。   It should be noted that the length of the protruding portion 7 may be set to such an extent that the vibration plate made of the piezoelectric films 3a, 3b, etc. is not in contact with each other when the diaphragm is vibrated and displaced. Further, in the example shown in FIG. 1, the protrusion 7 is an example in which the piezoelectric film is formed at the free end opposite to the one end fixed to the silicon substrate 1. The protrusion 7 can be formed in a slit formed in a direction that intersects perpendicularly. However, in this case, it is necessary to arrange the projections 7 so as not to disturb the vibration displacement of the diaphragm.

図２は、本発明の第２の実施例の説明図で、例えばスリットの平面形状を十字状に開口する構造の突起部が形成されている圧電膜を表している。図２に示すように、突起部７は、少なくとも圧電素子の中央部付近のスリット６の幅が広がりやすい部分に形成すればよく、必ずしもスリット６全体に沿って形成する必要はない。
このような構造の圧電素子は、スリットにより圧電膜の残留応力が解放され、圧電膜が反り、残留応力のばらつきにより隣接する圧電膜の反りの程度が異なってしまうが、圧電膜が反ることで、隣接する圧電膜に備えた突起部間の距離あるいは突起部と隣接する圧電膜との間の距離が実質的なスリットの幅となるため、従来の突起部が無い構造の圧電素子と比較して、実質的なスリットの幅つまり音響抵抗を低くする経路の幅が狭くなる。また、実質的なスリットの深さつまり音響抵抗の高い経路の長さが長くなる。 FIG. 2 is an explanatory view of a second embodiment of the present invention, and shows a piezoelectric film in which, for example, a projection having a structure in which a planar shape of a slit is opened in a cross shape is formed. As shown in FIG. 2, the protrusion 7 may be formed at least in a portion where the width of the slit 6 near the central portion of the piezoelectric element is likely to be widened, and is not necessarily formed along the entire slit 6.
In the piezoelectric element having such a structure, the residual stress of the piezoelectric film is released by the slit, the piezoelectric film warps, and the degree of warpage of the adjacent piezoelectric film varies depending on the variation of the residual stress, but the piezoelectric film warps. Therefore, the distance between the protrusions on the adjacent piezoelectric film or the distance between the protrusions and the adjacent piezoelectric film is a substantial slit width, so it is compared with a conventional piezoelectric element having no protrusion. Thus, the substantial slit width, that is, the width of the path for reducing the acoustic resistance is narrowed. Further, the substantial slit depth, that is, the length of the path with high acoustic resistance is increased.

その結果、音響抵抗を高く保つことができ、圧電膜の残留応力の影響を抑制しつつ、低周波感度の低減や信号雑音比の低減を抑制することができる。   As a result, the acoustic resistance can be kept high, and the low frequency sensitivity and the signal to noise ratio can be suppressed while suppressing the influence of the residual stress of the piezoelectric film.

以上本発明の実施例について説明したが、本発明の上記実施例に限定されるものでないことは言うまでもなく、具体的には、突起部は側面がスリットに沿っていればよく、突起部の幅や形状は適宜変更可能である。また空洞の形状やスリットの数、延出方向等も適宜変更可能である。   Although the embodiments of the present invention have been described above, it is needless to say that the present invention is not limited to the above-described embodiments of the present invention. Specifically, the protrusions only have to have side faces along the slits, and the width of the protrusions. The shape can be changed as appropriate. The shape of the cavity, the number of slits, the extending direction, etc. can be changed as appropriate.

１： シリコン基板、２：絶縁膜、３、３ａ、３ｂ：圧電膜、４、４ａ、４ｂ、４ｃ：電極、５ａ、５ｂ：配線電極、６：スリット、７：突起部、８：バックチャンバー 1: silicon substrate, 2: insulating film, 3, 3a, 3b: piezoelectric film, 4, 4a, 4b, 4c: electrode, 5a, 5b: wiring electrode, 6: slit, 7: protrusion, 8: back chamber

Claims (1)

圧電膜と、該圧電膜を挟んで配置する一対の電極と、前記圧電膜あるいは前記圧電膜および前記電極を貫通するスリットを備え、前記圧電膜の少なくとも一端が支持基板に支持され、他端が前記スリットにより自由端となる圧電素子において、
前記圧電膜は、前記スリットに沿った突起部を備えていることを特徴とする圧電素子。 A piezoelectric film; a pair of electrodes disposed across the piezoelectric film; and the piezoelectric film or a slit penetrating the piezoelectric film and the electrode, wherein at least one end of the piezoelectric film is supported by a support substrate, and the other end is In the piezoelectric element that becomes a free end by the slit,
The piezoelectric film is characterized in that the piezoelectric film includes a protrusion along the slit.
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