JP2019154124A - Semiconductor module terminal connection structure - Google Patents

Semiconductor module terminal connection structure Download PDF

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JP2019154124A
JP2019154124A JP2018036864A JP2018036864A JP2019154124A JP 2019154124 A JP2019154124 A JP 2019154124A JP 2018036864 A JP2018036864 A JP 2018036864A JP 2018036864 A JP2018036864 A JP 2018036864A JP 2019154124 A JP2019154124 A JP 2019154124A
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bus bar
insulator
terminal
positive
negative
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清道 荒木
Kiyomichi Araki
清道 荒木
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Toyota Motor Corp
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Toyota Motor Corp
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Abstract

To provide a terminal connection structure of a semiconductor module capable of preventing or inhibiting a bus bar from floating by restraining the bus bar to an insulator.SOLUTION: In a terminal connection structure of a semiconductor module connecting via bus bars 5, 6 a positive electrode terminal 2b and a negative electrode terminal 2c, protruding in the same direction from each of a plurality of semiconductor modules 2 and a predetermined connection target component 4, each of the bus bar 5, 6 has a flat plate portion and a bonding portion that is bent in the same direction from the plate portion and is bonded to a positive electrode side terminal 2b or a negative electrode side terminal 2c, The bus bars 5, 6 are arranged in order of the plate portion of any one of the bus bars 5, an insulator 7, and the plate portion of the other bus bar 6 along the protruding direction of the terminals 2b and 2c from the semiconductor module 2 side.The other bus bar 6 is provided with a restraining portion 6d that engages with the insulator 7 so that the bus bar is not displaced to a side away from the insulator 7 with respect to a protruding direction of the terminals 2b, 2c.SELECTED DRAWING: Figure 1

Description

本発明は、複数の半導体モジュールのそれぞれの正極端子及び負極端子と接続対象とがバスバを介して接続された端子接続構造に関する。   The present invention relates to a terminal connection structure in which a positive terminal and a negative terminal of each of a plurality of semiconductor modules are connected to a connection target via a bus bar.

インバータ回路、コンバータ回路等を含んだ電力変換装置には、パワー半導体とも称される複数の半導体モジュールが実装されている。半導体モジュールはコンデンサ等の接続対象部品と適宜に接続されるが、その接続を実現する構造として、複数の半導体モジュールがそれぞれの正極端子及び負極端子を同一方向に揃って突出させるようにして一列に並べて積層され、半導体モジュールの列上には一対のバスバの板部がそれらの間に絶縁体を挟むようにして重ね合わされ、一方のバスバの板部から起こされた接合部が各半導体モジュールの正極端子に、他方のバスバの板部から起こされた接合部が各半導体モジュールの負極端子にそれぞれ接合された端子接続構造が知られている(例えば特許文献1参照)。   In a power conversion device including an inverter circuit, a converter circuit, and the like, a plurality of semiconductor modules that are also called power semiconductors are mounted. The semiconductor module is appropriately connected to a connection target component such as a capacitor, but as a structure for realizing the connection, a plurality of semiconductor modules are arranged in a line so that each positive terminal and negative terminal protrude in the same direction. Stacked side by side, a pair of bus bar plate portions are stacked on the semiconductor module row so that an insulator is sandwiched between them, and a junction raised from one bus bar plate portion is connected to the positive terminal of each semiconductor module. A terminal connection structure is known in which a joint raised from the plate of the other bus bar is joined to the negative terminal of each semiconductor module (see, for example, Patent Document 1).

特開2017−212810号公報JP 2017-2112810 A

絶縁体を挟んで一対のバスバの板部を重ね合わせた構造では、絶縁体に対して半導体モジュールの反対側に配置されるバスバが絶縁体から浮き上がることによって不都合が生じるおそれがある。例えば、バスバを極小距離で並行に配置した構造では、相互インダクタンスによるインダクタンス低減効果が期待できるが、バスバが浮き上がれば板部間の距離が拡大し、インダクタンス低減効果が損なわれるおそれがある。あるいは、バスバの浮き上がりにより、板部と絶縁体との接触面積が減少して絶縁性が低下するおそれがある。   In the structure in which the plate portions of the pair of bus bars are overlapped with the insulator interposed therebetween, there is a possibility that inconvenience may occur due to the bus bar arranged on the opposite side of the semiconductor module with respect to the insulator floating from the insulator. For example, in a structure in which bus bars are arranged in parallel at a minimum distance, an inductance reduction effect due to mutual inductance can be expected, but if the bus bar rises, the distance between the plate portions may increase, and the inductance reduction effect may be impaired. Alternatively, the contact area between the plate portion and the insulator may be reduced due to the rise of the bus bar, and the insulation may be deteriorated.

そこで、本発明はバスバを絶縁体に拘束してバスバの浮き上がりを防止し、又は抑制することが可能な半導体モジュールの端子接続構造を提供することを目的とする。   SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a terminal connection structure of a semiconductor module that can restrain or suppress the bus bar from being lifted by restraining the bus bar with an insulator.

本発明の一態様に係る端子接続構造は、複数の半導体モジュールのそれぞれから同一方向に突出する正極端子及び負極端子と所定の接続対象部品とを正極側バスバ及び負極側バスバを介して接続する半導体モジュールの端子接続構造であって、前記正極側バスバ及び負極側バスバのそれぞれには、平坦に延びる板部と、前記板部から同一方向に屈曲して前記正極側端子又は前記負極側端子と接合される接合部とが設けられ、前記正極側バスバ及び負極側バスバのそれぞれは、前記複数の半導体モジュール側から前記正極端子及び負極端子の突出方向に沿って、いずれか一方のバスバの板部、絶縁体、及び他方のバスバの板部の順で重なるように、かつ前記正極側バスバの前記接合部が前記正極端子に、前記負極側バスバの前記接合部が前記負極端子にそれぞれ接合するように配置され、前記他方のバスバには、当該他方のバスバが前記突出方向に関して前記絶縁体から遠ざかる側に変位しないようにして前記絶縁体とかみ合う拘束部が設けられているものである。   The terminal connection structure which concerns on 1 aspect of this invention is a semiconductor which connects the positive electrode terminal and negative electrode terminal which protrude in the same direction from each of several semiconductor modules, and predetermined connection object components via a positive electrode side bus bar and a negative electrode side bus bar. A terminal connection structure for a module, wherein each of the positive-side bus bar and the negative-side bus bar has a flat plate portion that extends flatly and is bent in the same direction from the plate portion and joined to the positive-side terminal or the negative-side terminal. Each of the positive electrode side bus bar and the negative electrode side bus bar is provided along the protruding direction of the positive electrode terminal and the negative electrode terminal from the plurality of semiconductor module sides, The insulator and the plate portion of the other bus bar overlap in this order, and the joint portion of the positive side bus bar is connected to the positive terminal, and the joint portion of the negative side bus bar is the negative side. Each of the other bus bars is provided with a restraining portion that engages with the insulator so that the other bus bar is not displaced to the side away from the insulator in the protruding direction. Is.

一形態に係る端子接続構造が適用された電力変換装置の一例を示す斜視図。The perspective view which shows an example of the power converter device to which the terminal connection structure which concerns on one form was applied. 一対のバスバと絶縁体との積層部分の詳細を示す斜視図。The perspective view which shows the detail of the laminated part of a pair of bus bar and an insulator. 図2に示した拡大部分を図1のY方向に沿って見た状態を示す垂直断面図。FIG. 3 is a vertical sectional view showing a state in which the enlarged portion shown in FIG. 2 is viewed along the Y direction of FIG. 1. 図2に示した拡大部分を図1のX方向に沿って見た状態を示す垂直断面図。FIG. 3 is a vertical sectional view showing a state in which the enlarged portion shown in FIG. 2 is viewed along the X direction of FIG. 1. 負極側バスバを絶縁体に装着する様子を示す図。The figure which shows a mode that the negative electrode side bus bar is mounted | worn with an insulator. 負極側バスバが絶縁体に装着された状態を示す図。The figure which shows the state by which the negative electrode side bus bar was mounted | worn with the insulator. 負極側バスバを形成する基礎として打ち抜かれた原版を示す図。The figure which shows the original stamped out as a foundation which forms a negative electrode side bus bar. 図7の原版に基づいて形成される一次中間品を示す斜視図。The perspective view which shows the primary intermediate product formed based on the original plate of FIG. 図7の原版に基づいて形成される二次中間品を示す斜視図。The perspective view which shows the secondary intermediate product formed based on the original plate of FIG. 負極側バスバの最終形状を示す斜視図。The perspective view which shows the final shape of a negative electrode side bus bar. 図5の変形例を示す図。The figure which shows the modification of FIG. 図6の変形例を示す図。The figure which shows the modification of FIG.

図1〜図10を参照して本発明の一形態を説明する。図1は、本形態の端子接続構造が適用された電力変換装置の一例を示している。図示の電力変換装置1は、例えば電動車両のパワーコントロールユニットに組み込まれ、車両のバッテリから印加される電圧を昇圧し、あるいは電動機から印加される電圧を降圧するコンバータ回路、及び直流電力と交流電力との変換を担当するインバータ回路といった駆動回路を含んでいる。回路構成は適宜でよく、その詳細は説明を省略する。電力変換装置1には、一列に並べられた複数の半導体モジュール2と、それらの半導体モジュール2を冷却する冷却器3と、各半導体モジュール2の接続対象部品の一例としてのコンデンサ4と、各半導体モジュール2とコンデンサ4とを接続する一対のバスバ5、6と、バスバ5、6の間に介在する絶縁体7とを備えている。なお、複数の半導体モジュール2は互いに等しい構成を備えており、図1ではそれらの一部のみに代表して参照符号を付してある。以下同様に、構成が等しい複数の要素については、一部の要素のみに代表して参照符号を付すことがある。また、以下において、電力変換装置1における方向を特定する場合には、図1に示すように、半導体モジュール2の並び方向をX方向、並び方向と直交する上下方向をZ方向、X方向及びZ方向の両者に直交する方向をY方向と称し、各方向における向きについては+で示した側を正方向、−で示した側を負方向と称することがある。ただし、これらの呼称は説明の便宜のために設定するものである。   An embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows an example of a power converter to which the terminal connection structure of this embodiment is applied. The illustrated power conversion apparatus 1 is incorporated in, for example, a power control unit of an electric vehicle, boosts a voltage applied from a vehicle battery, or steps down a voltage applied from an electric motor, and DC power and AC power. And a drive circuit such as an inverter circuit in charge of conversion. The circuit configuration may be appropriate, and a detailed description thereof will be omitted. The power converter 1 includes a plurality of semiconductor modules 2 arranged in a line, a cooler 3 that cools the semiconductor modules 2, a capacitor 4 as an example of a connection target component of each semiconductor module 2, and each semiconductor A pair of bus bars 5 and 6 for connecting the module 2 and the capacitor 4 and an insulator 7 interposed between the bus bars 5 and 6 are provided. Note that the plurality of semiconductor modules 2 have the same configuration, and in FIG. 1, only a part of them is represented by reference numerals. In the same manner, a plurality of elements having the same configuration may be given a reference symbol on behalf of only some elements. Further, in the following, when specifying the direction in the power conversion device 1, as shown in FIG. 1, the alignment direction of the semiconductor modules 2 is the X direction, and the vertical direction orthogonal to the alignment direction is the Z direction, the X direction, and the Z direction. A direction orthogonal to both of the directions is sometimes referred to as a Y direction, and the direction in each direction may be referred to as a positive direction, and a negative direction may be referred to as a negative direction. However, these names are set for convenience of explanation.

半導体モジュール2は、一例として、コンバータ回路又はインバータ回路における電力変換用のスイッチング素子として構成されている。その種の半導体モジュール2はパワー半導体と呼ばれることがある。各半導体モジュール2は、スイッチング素子を構成するトランジスタ、ダイオード等の素子類が封入された平坦なカード状、一例として矩形のカード状のパッケージ2aを有し、パッケージ2aの一側面からは正極端子2b、負極端子2c及び中点端子2dが同一方向(図1ではZ正方向)に突出するようにして引き出されている。各端子2b、2c及び2dは、一例として半導体モジュール2のパッケージ2aの表裏面と平行な平板状に形成され、端子2b、2c、2dの並び方向はパッケージ2aの辺方向と平行である。   As an example, the semiconductor module 2 is configured as a switching element for power conversion in a converter circuit or an inverter circuit. Such a semiconductor module 2 is sometimes called a power semiconductor. Each semiconductor module 2 has a flat card-like package 2a in which elements such as transistors and diodes constituting a switching element are enclosed, for example, a rectangular card-like package 2a. From one side of the package 2a, a positive terminal 2b The negative terminal 2c and the midpoint terminal 2d are drawn out so as to protrude in the same direction (Z positive direction in FIG. 1). The terminals 2b, 2c, and 2d are formed as a flat plate parallel to the front and back surfaces of the package 2a of the semiconductor module 2 as an example, and the arrangement direction of the terminals 2b, 2c, and 2d is parallel to the side direction of the package 2a.

冷却器3には、図1のX方向に互いに平行かつ等間隔に配置された複数の平板状の熱交換部3aと、それらの熱交換部3aに対して冷媒、例えば冷水を流通させる一対の冷媒管3bとが設けられている。冷媒はいずれか一方の冷媒管3bから流入して他方の冷媒管3bから排出される。熱交換部3aの個数は半導体モジュール2よりも一つ多く設定されている。半導体モジュール2は、それらの端子2b、2c、2dの突出方向を同一方向、例えば図1のZ正方向に揃えた状態で熱交換部3a間の隙間に一つずつ配置されることにより、図1のX方向に一列に並べて配置されている。バスバ5、6及び絶縁体7は、冷却器3の上面側(Z正方向の側)に、一方のバスバ5、絶縁体7及び他方のバスバ6の順で重ね合わせて配置されている。下側のバスバ5は各半導体モジュール2の正極端子2bとコンデンサ4とを接続し、上側のバスバ6は各半導体モジュール2の負極端子2cとコンデンサ4とを接続する。以下、バスバ5を正極側バスバ5、バスバ6を負極側バスバ6と呼ぶことがある。なお、中点端子2dの接続先に関しては説明を省略する。   The cooler 3 includes a plurality of flat plate-like heat exchange units 3a arranged in parallel with each other in the X direction in FIG. 1 and a pair of refrigerants such as cold water flowing through the heat exchange units 3a. A refrigerant pipe 3b is provided. The refrigerant flows from one of the refrigerant pipes 3b and is discharged from the other refrigerant pipe 3b. The number of heat exchange parts 3a is set to be one more than that of the semiconductor module 2. The semiconductor modules 2 are arranged one by one in the gap between the heat exchanging portions 3a with the protruding directions of the terminals 2b, 2c, and 2d aligned in the same direction, for example, the positive Z direction in FIG. 1 are arranged in a line in the X direction. The bus bars 5 and 6 and the insulator 7 are arranged on the upper surface side (the Z positive direction side) of the cooler 3 so as to overlap one bus bar 5, the insulator 7 and the other bus bar 6 in this order. The lower bus bar 5 connects the positive terminal 2 b of each semiconductor module 2 and the capacitor 4, and the upper bus bar 6 connects the negative terminal 2 c of each semiconductor module 2 and the capacitor 4. Hereinafter, the bus bar 5 may be referred to as a positive electrode side bus bar 5, and the bus bar 6 may be referred to as a negative electrode side bus bar 6. Note that description of the connection destination of the midpoint terminal 2d is omitted.

バスバ5、6及び絶縁体7の積層部分の詳細を図2〜図4に示す。なお、図2は図1の部分拡大図、図3及び図4は図2に示した拡大部分における垂直断面図であって、いずれの図でも正極端子2b及び負極端子2cの図示は省略されている。まず、図3及び図4に示したように、正極側バスバ5は、絶縁体7の下面側に沿って平坦に延びる板部5aと、その板部5aから同一方向(Z正方向)に概略90°屈曲する複数の接合部5bとを備えている。接合部5bのそれぞれは半導体モジュール2の正極端子2bと1対1に対応付けて設けられ、接合部5bの個数は正極端子2bの個数に等しく、それらの並び方向の間隔は正極端子2bの間隔と等しい。それにより、正極側バスバ5を冷却器3上に配置したとき、各接合部5bは半導体モジュール2のそれぞれの正極端子2bと向かい合うようにして正極端子2bと接触する。   Details of the laminated portion of the bus bars 5 and 6 and the insulator 7 are shown in FIGS. 2 is a partially enlarged view of FIG. 1, and FIGS. 3 and 4 are vertical sectional views of the enlarged portion shown in FIG. 2, in which the positive electrode terminal 2b and the negative electrode terminal 2c are not shown. Yes. First, as shown in FIGS. 3 and 4, the positive-side bus bar 5 is schematically shown in the same direction (Z positive direction) from the plate portion 5 a that extends flatly along the lower surface side of the insulator 7. And a plurality of joint portions 5b bent by 90 °. Each of the joint portions 5b is provided in one-to-one correspondence with the positive electrode terminal 2b of the semiconductor module 2, the number of the joint portions 5b is equal to the number of the positive electrode terminals 2b, and the interval in the arrangement direction is the interval between the positive electrode terminals 2b. Is equal to Thereby, when the positive electrode side bus bar 5 is arranged on the cooler 3, each joint portion 5 b comes into contact with the positive electrode terminal 2 b so as to face each positive electrode terminal 2 b of the semiconductor module 2.

負極側バスバ6は、絶縁体7の上面側に沿って平坦に延びる板部6aと、その板部6aから同一方向に概略90°屈曲する複数の接合部6bとを備えている。接合部6bのそれぞれは半導体モジュール2の負極端子2cと1対1に対応付けて設けられ、接合部6bの個数は負極端子2cの個数に等しく、それらの並び方向の間隔は負極端子2cの間隔と等しい。それにより、負極側バスバ6を絶縁体7上に配置したとき、各接合部6bは半導体モジュール2のそれぞれの負極端子2cと向かい合うようにして負極端子2cと接触する。なお、板部5a、6aは概ね一枚の平板状に形成されるが、それぞれの一部が180°折り返されている。したがって、図3及び図4では板部5a、6aのそれぞれが二枚重ねの平板状に示されている(図4の参照符号5、6を参照)。   The negative electrode-side bus bar 6 includes a plate portion 6a that extends flatly along the upper surface side of the insulator 7, and a plurality of joint portions 6b that bend approximately 90 ° in the same direction from the plate portion 6a. Each of the joint portions 6b is provided in one-to-one correspondence with the negative electrode terminal 2c of the semiconductor module 2, the number of the joint portions 6b is equal to the number of the negative electrode terminals 2c, and the interval in the arrangement direction is the interval between the negative electrode terminals 2c. Is equal to Thereby, when the negative electrode side bus bar 6 is disposed on the insulator 7, each joint 6 b comes into contact with the negative electrode terminal 2 c so as to face each negative electrode terminal 2 c of the semiconductor module 2. The plate portions 5a and 6a are generally formed in a single flat plate shape, but a part of each is folded 180 °. Therefore, in FIG.3 and FIG.4, each of plate part 5a, 6a is shown by the flat plate shape of 2 sheets (refer the referential mark 5 and 6 of FIG. 4).

絶縁体7は例えば樹脂等の絶縁性の材料によって構成される。図3によく示されているように、絶縁体7には、平板状の基部7aと、基部7aから同一方向(Z正方向)に突出する中空の筒部7bとが設けられている。基部7aには、正極側バスバ5が嵌め合わされるバスバ取付溝7cが形成されている。バスバ取付溝7cにより基部7aには薄板部7dが生じる。その薄板部7dを挟んでバスバ5、6の板部5a、5bが向かい合うことにより、バスバ5、6間における並走効果が増大し、相互インダクタンスによるインダクタンス低減効果が増大する。筒部7bは正極端子2b及び正極側バスバ5の接合部5bを通過させる部分である。筒部7bの個数は正極端子2b及び接合部5bの個数に等しく、かつ筒部7bの並び間隔も正極端子2b及び接合部5bの並び間隔と同じである。負極側バスバ6には、各筒部7を通過させるための抜き孔6cが形成されている。   The insulator 7 is made of an insulating material such as a resin. As well shown in FIG. 3, the insulator 7 is provided with a flat plate-like base portion 7a and a hollow cylindrical portion 7b protruding from the base portion 7a in the same direction (Z positive direction). A bus bar mounting groove 7c into which the positive electrode side bus bar 5 is fitted is formed in the base portion 7a. A thin plate portion 7d is formed in the base portion 7a by the bus bar mounting groove 7c. When the plate portions 5a and 5b of the bus bars 5 and 6 face each other across the thin plate portion 7d, the parallel running effect between the bus bars 5 and 6 increases, and the inductance reduction effect due to mutual inductance increases. The cylindrical part 7 b is a part through which the positive electrode terminal 2 b and the joint part 5 b of the positive electrode side bus bar 5 pass. The number of tube portions 7b is equal to the number of positive electrode terminals 2b and joint portions 5b, and the arrangement interval of the cylinder portions 7b is the same as the arrangement interval of the positive electrode terminals 2b and the joint portions 5b. In the negative electrode side bus bar 6, a hole 6 c for passing each cylindrical portion 7 is formed.

図3に示したように、絶縁体7の基部7aにおいて、バスバ取付溝7cの反対側に位置する端部には掛止部7e及び溝部7fが設けられている。一方、図2に示したように、負極側バスバ6の一端部(図1のY正方向の端部)には複数の爪部6dが形成されている。各爪部6dは、負極側バスバ6が半導体モジュール2の端子2b、2cの突出方向に関して絶縁体7から遠ざかる側に変位しないようにして絶縁体7とかみ合う拘束部の一例として設けられている。すなわち、図5に矢印Fで示したように、負極側バスバ6を絶縁体7の上方から基部7aに乗せる際、爪部6dは基部7aの掛止部7eを乗り越えて溝部7fに嵌り合う。爪部6dの先端側は180°折り返された形状であって厚みが増している。したがって、爪部6dが溝部7fに嵌り合うことにより、端子2b、2cの突出方向(図1のZ正方向)に関して爪部6dが掛止部7eとかみ合い、それにより、爪部6dが端子2b、2cの突出方向に相対変位不可能となるように絶縁体7に拘束される。このため、負極側バスバ6の浮き上がりが阻止される。仮に負極側バスバ6が絶縁体7から浮き上がれば、バスバ5、6の板部5a、6a間の距離が拡大して上述したインダクタンス低減効果が損なわれ、あるいは負極側バスバ6と絶縁体7との接触面積が減少して絶縁性が低減する、といった不都合が生じるおそれがあるが、爪部6dにて負極側バスバ6の浮き上がりが阻止されることにより、そのような不都合の発生を抑制し、あるいは防止することができる。なお、図5において、負極側バスバ6を下方に移動させて絶縁体7上に装着するのは、抜き孔6cに絶縁体7の筒部7bを通過させるためである。つまり、抜き孔6cを筒部7bが貫通する構造のため、絶縁体7に対して負極側バスバ6を板部6aの表面に沿った方向に変位させることは困難又は不可能である。そのため、爪部6dも、絶縁体7の上方からの装着時に掛止部7eを乗り越えて溝部7fにはめ合わせることが可能な形状とされている。各バスバ5、6のコンデンサ4側の端部は、例えばコンデンサ4との接合部分にて適宜に拘束される。よって、負極側バスバ6の反対側(図1のY正方向)の端部を爪部6dにて拘束すれば、負極側バスバ6の浮き上がりは十分に抑制することが可能である。   As shown in FIG. 3, in the base portion 7a of the insulator 7, a latching portion 7e and a groove portion 7f are provided at an end portion on the opposite side of the bus bar mounting groove 7c. On the other hand, as shown in FIG. 2, a plurality of claw portions 6 d are formed at one end portion (end portion in the Y positive direction in FIG. 1) of the negative electrode side bus bar 6. Each claw portion 6d is provided as an example of a restraining portion that meshes with the insulator 7 so that the negative-side bus bar 6 does not displace to the side away from the insulator 7 in the protruding direction of the terminals 2b and 2c of the semiconductor module 2. That is, as shown by the arrow F in FIG. 5, when the negative-side bus bar 6 is put on the base portion 7a from above the insulator 7, the claw portion 6d gets over the hook portion 7e of the base portion 7a and fits into the groove portion 7f. The front end side of the claw portion 6d has a shape folded back by 180 ° and has an increased thickness. Accordingly, when the claw portion 6d fits into the groove portion 7f, the claw portion 6d engages with the latching portion 7e in the projecting direction of the terminals 2b and 2c (Z positive direction in FIG. 1), whereby the claw portion 6d becomes the terminal 2b. 2c is restrained by the insulator 7 so that relative displacement is impossible in the protruding direction. For this reason, the negative side bus bar 6 is prevented from floating. If the negative electrode side bus bar 6 is lifted from the insulator 7, the distance between the plate portions 5a, 6a of the bus bars 5, 6 is increased, and the above-described inductance reduction effect is impaired, or the negative electrode side bus bar 6 and the insulator 7 There is a possibility that inconveniences such as reduction of the contact area of the metal and reduction in insulation may occur, but the occurrence of such inconvenience is suppressed by preventing the negative side bus bar 6 from being lifted by the claw portion 6d, Alternatively, it can be prevented. In FIG. 5, the negative-side bus bar 6 is moved downward and mounted on the insulator 7 in order to allow the cylindrical portion 7b of the insulator 7 to pass through the hole 6c. That is, since the cylindrical portion 7b penetrates the punched hole 6c, it is difficult or impossible to displace the negative electrode bus bar 6 in the direction along the surface of the plate portion 6a with respect to the insulator 7. Therefore, the claw portion 6d is also configured to be able to get over the hook portion 7e and fit into the groove portion 7f when the insulator 7 is mounted from above. The end of each bus bar 5, 6 on the side of the capacitor 4 is appropriately restrained at, for example, a joint portion with the capacitor 4. Therefore, if the end of the negative side bus bar 6 on the opposite side (Y positive direction in FIG. 1) is constrained by the claw portion 6d, the floating of the negative side bus bar 6 can be sufficiently suppressed.

次に、図7〜図10を参照して負極側バスバ6を形成する手順の一例を説明する。負極側バスバ6を形成するには、まず図7に示すように、一枚の導電性の金属板を打ち抜き加工して負極側バスバ6の原版6Aを形成する。その原版6Aには接合部6b及び抜き孔6cが打ち抜かれて板部6aと面一の状態で形成される。ただし、接合部6bは二列に亘って千鳥状に形成されている。接合部6bの各列において、接合部6bの並び間隔は、最終製品の負極側バスバ6における接合部6bの並び間隔の2倍である。また、接合部6bの列間の二箇所には爪部6dが板部6aと面一の状態で形成される。次に、図8に矢印Bで例示したように、外側の列の接合部6bが下方に略90°、内側の列の接合部6bが上方に略90°それぞれ折り曲げられる。これにより一次中間品6Bが形成される。その後、接合部6bの列間の中間に設定された折れ線FL−FLに沿って外側の列の接合部6bが板部6aの上面側と重なるように180°折り返される(矢印C参照)。これにより、図9に示した二次中間品6Cが形成される。なお、このときの折り返し部分は板部6aに対して溶接等によって接合されてよい。二次中間品6Cにおいて接合部6bは一列に整列し、それらの接合部6bの間隔は負極側バスバ6における接合部6bの間隔と一致する。爪部6dは板部6aと面一をなすように延ばされた状態に維持される。その後、図9に矢印Dで示したように二次中間品6Cの爪部6dが下方に折り曲げられる。具体的には爪部6dの先端側が下方に略180°折り曲げられるとともに、爪部6dの基部側が下方に略90°折り返される。また、板部6aの両端等も必要に応じて折り返される。それにより、図10に示した負極側バスバ6が形成される。   Next, an example of a procedure for forming the negative electrode bus bar 6 will be described with reference to FIGS. In order to form the negative electrode side bus bar 6, first, as shown in FIG. 7, an original plate 6 </ b> A of the negative electrode side bus bar 6 is formed by punching one conductive metal plate. In the original plate 6A, the joint portion 6b and the punching hole 6c are punched to be formed flush with the plate portion 6a. However, the joining portions 6b are formed in a staggered manner over two rows. In each row of the joint portions 6b, the arrangement interval of the junction portions 6b is twice the arrangement interval of the junction portions 6b in the negative electrode bus bar 6 of the final product. Further, claw portions 6d are formed at two positions between the rows of the joint portions 6b so as to be flush with the plate portion 6a. Next, as illustrated by an arrow B in FIG. 8, the outer row joining portion 6b is bent downward by approximately 90 °, and the inner row joining portion 6b is bent upward by approximately 90 °. Thereby, the primary intermediate product 6B is formed. Thereafter, the joint 6b in the outer row is folded back 180 ° along the broken line FL-FL set in the middle between the rows of the joint 6b (see arrow C). Thereby, the secondary intermediate product 6C shown in FIG. 9 is formed. The folded portion at this time may be joined to the plate portion 6a by welding or the like. In the secondary intermediate product 6 </ b> C, the joint portions 6 b are aligned in a line, and the distance between the joint portions 6 b coincides with the distance between the joint portions 6 b in the negative-side bus bar 6. The claw portion 6d is maintained in an extended state so as to be flush with the plate portion 6a. Thereafter, as indicated by an arrow D in FIG. 9, the claw portion 6d of the secondary intermediate product 6C is bent downward. Specifically, the front end side of the claw portion 6d is bent downward by approximately 180 °, and the base portion side of the claw portion 6d is bent downward by approximately 90 °. Further, both ends of the plate portion 6a are also folded as necessary. Thereby, the negative electrode side bus bar 6 shown in FIG. 10 is formed.

本発明は、上述した実施形態及び変形例に限定されず、種々の変形又は変更が施された形態にて実施されてよい。例えば、上記の形態では、負極側バスバ6の爪部6dを絶縁体7への装着前の段階で予め所定形状に成形したが、例えば図11及び図12に示したように、負極側バスバ6を絶縁体7に乗せた後に爪部6dを掛止部7eに沿って図11の矢印Eで示したごとく折り曲げ加工することにより、爪部6dを掛止部7eとかみ合わせるようにしてもよい。この他にも、バスバの浮き上がりを防ぐための拘束部はバスバの適宜の位置に設けられてよく、その形状も絶縁体から遠ざかる側へのバスバの変位を抑制できる限りにおいて適宜に変形可能である。例えば、絶縁体7の基部(ただし、薄板部7dの範囲を除く)に貫通孔を形成し、その貫通孔に負極側バスバ6と一体の先広がり形状のボス、ピン等をはめ合わせることにより負極側バスバ6の浮き上がりを阻止してもよい。   The present invention is not limited to the above-described embodiments and modifications, and may be implemented in various modified or changed forms. For example, in the above embodiment, the claw portion 6d of the negative electrode side bus bar 6 is formed into a predetermined shape in advance before being attached to the insulator 7, but for example, as shown in FIGS. The claw part 6d may be engaged with the latching part 7e by bending the claw part 6d along the latching part 7e as shown by the arrow E in FIG. . In addition to this, the restraining portion for preventing the bus bar from being lifted up may be provided at an appropriate position of the bus bar, and its shape can be appropriately modified as long as the displacement of the bus bar toward the side away from the insulator can be suppressed. . For example, a through hole is formed in the base portion of the insulator 7 (excluding the range of the thin plate portion 7d), and the negative electrode is formed by fitting a boss, a pin, or the like, which is integral with the negative electrode bus bar 6, into the through hole. The side bus bar 6 may be prevented from floating.

上記の形態では、半導体モジュール2の列からみて、正極側バスバ5、絶縁体7及び負極側バスバ6の順で重ね合わせる構造に対応して負極側バスバ6の絶縁体7からの浮き上がりを拘束部の一例としての爪部6dによって阻止したが、負極側バスバが半導体モジュールと絶縁体との間に配置され、かつ絶縁体の上方に正極側バスバが配置される場合には、正極側バスバの浮き上がりを拘束部にて拘束すればよい。   In the above embodiment, the lifting of the negative bus bar 6 from the insulator 7 corresponding to the structure in which the positive bus bar 5, the insulator 7, and the negative bus bar 6 are overlapped in this order as viewed from the row of the semiconductor modules 2 is the restraining portion. In the case where the negative side bus bar is disposed between the semiconductor module and the insulator and the positive side bus bar is disposed above the insulator, the positive side bus bar is lifted. May be restrained by the restraining portion.

本発明に係る端子接続構造は、電動自動車の電力変換装置に適用される例に限らず、半導体モジュールの正極端子及び負極端子と接続対象部品との間をバスバにて接続する場合の端子接続構造として各種の用途に用いられてよい。   The terminal connection structure according to the present invention is not limited to an example applied to a power conversion device for an electric vehicle, but is a terminal connection structure when a positive electrode terminal and a negative electrode terminal of a semiconductor module are connected to a component to be connected by a bus bar. May be used for various purposes.

上述した実施の形態及び変形例のそれぞれから導き出される本発明の各種の態様を以下に記載する。なお、以下の説明では、本発明の各態様の理解を容易にするために添付図面に図示された対応する構成要素を括弧書きにて付記するが、それにより本発明が図示の形態に限定されるものではない。   Various aspects of the present invention derived from each of the above-described embodiments and modifications will be described below. In the following description, in order to facilitate understanding of each aspect of the present invention, the corresponding components illustrated in the accompanying drawings are added in parentheses, but the present invention is thereby limited to the illustrated embodiments. It is not something.

本発明の一態様に係る端子接続構造は、複数の半導体モジュール(2)のそれぞれから同一方向に突出する正極端子(2b)及び負極端子(2c)と所定の接続対象部品(4)とを正極側バスバ(5)及び負極側バスバ(6)を介して接続する半導体モジュールの端子接続構造であって、前記正極側バスバ及び負極側バスバのそれぞれには、平坦に延びる板部(5a、6a)と、前記板部から同一方向に屈曲して前記正極側端子又は前記負極側端子と接合される接合部(5b、6b)とが設けられ、前記正極側バスバ及び負極側バスバのそれぞれは、前記複数の半導体モジュール側から前記正極端子及び負極端子の突出方向に沿って、いずれか一方のバスバ(一例としてバスバ5)の板部(5a)、絶縁体(7)、及び他方のバスバ(一例としてバスバ6)の板部(6a)の順で重なるように、かつ前記正極側バスバの前記接合部が前記正極端子に、前記負極側バスバの前記接合部が前記負極端子にそれぞれ接合するように配置され、前記他方のバスバには、当該他方のバスバが前記突出方向に関して前記絶縁体から遠ざかる側に変位しないようにして前記絶縁体とかみ合う拘束部(6d)が設けられているものである。   The terminal connection structure which concerns on 1 aspect of this invention is a positive electrode terminal (2b) and the negative electrode terminal (2c) which protrude in the same direction from each of several semiconductor module (2), and predetermined | prescribed connection object component (4) are made into a positive electrode A terminal connection structure of a semiconductor module connected via a side bus bar (5) and a negative side bus bar (6), each of the positive side bus bar and the negative side bus bar extending flatly (5a, 6a) And a joint portion (5b, 6b) that is bent in the same direction from the plate portion and joined to the positive terminal or the negative terminal, each of the positive bus bar and the negative bus bar is The plate portion (5a) of one of the bus bars (as an example, the bus bar 5), the insulator (7), and the other bus bar (as an example) along the protruding direction of the positive electrode terminal and the negative electrode terminal from the plurality of semiconductor module sides. So that the plate portion (6a) of the bus bar 6) overlaps in this order, and the joint portion of the positive-side bus bar is joined to the positive terminal and the joint portion of the negative-side bus bar is joined to the negative terminal. The other bus bar is provided with a restraining portion (6d) that engages with the insulator so that the other bus bar does not displace to the side away from the insulator in the protruding direction.

上記態様によれば、絶縁体に対して半導体モジュールとは反対側に配置される他方のバスバが拘束部によって絶縁体上に拘束される。そのため、絶縁体から遠ざかる側へのバスバの変位、すなわちバスバの絶縁体に対する浮き上がりを防止し、又は抑制することが可能である。したがって、一対のバスバの板部間の距離の増加に伴うインダクタンス低減効果の低下、あるいはバスバと絶縁体との接触面積の減少に伴う絶縁性の低下といった不都合が生じるおそれを低減、又は解消し、信頼性の高い端子接続構造を実現することができる。   According to the said aspect, the other bus bar arrange | positioned on the opposite side to a semiconductor module with respect to an insulator is restrained on an insulator by a restraint part. Therefore, it is possible to prevent or suppress the displacement of the bus bar toward the side away from the insulator, that is, the floating of the bus bar with respect to the insulator. Therefore, the possibility of inconvenience such as a decrease in inductance reduction effect due to an increase in the distance between the plate portions of the pair of bus bars or a decrease in insulation due to a decrease in the contact area between the bus bars and the insulator is reduced or eliminated, A highly reliable terminal connection structure can be realized.

上記の態様において、前記複数の半導体モジュールは所定方向に列を形成するように並べて設けられ、前記正極端子及び負極端子は前記半導体モジュールの並び方向に対する側方に揃って突出するように設けられ、前記一方のバスバの板部、前記絶縁体及び前記他方のバスバの板部が前記正極端子及び前記負極端子の突出方向に沿って重ね合わされてもよい。また、前記接続対象部品は前記正極側バスバ及び負極側バスバの一端部にて各バスバと接続され、前記拘束部は前記他方のバスバにおける前記接続対象部品に対する反対側に位置する他端部にて前記絶縁体とかみ合うように設けられてもよい。さらに、前記他方のバスバが金属板を板金加工して形成される場合、前記拘束部は前記バスバの成形過程で所定形状に形成されてもよい。あるいは、前記他方のバスバが前記絶縁体に装着される際に、前記拘束部が前記絶縁体とかみ合うように曲げ加工されてもよい。   In the above aspect, the plurality of semiconductor modules are provided side by side so as to form a row in a predetermined direction, and the positive electrode terminal and the negative electrode terminal are provided so as to protrude side by side with respect to the arrangement direction of the semiconductor modules, The plate portion of the one bus bar, the insulator, and the plate portion of the other bus bar may be overlapped along the protruding direction of the positive terminal and the negative terminal. Further, the connection target component is connected to each bus bar at one end of the positive bus bar and the negative bus bar, and the restraining portion is the other end located on the opposite side of the other bus bar to the connection target component. It may be provided so as to mesh with the insulator. Further, in the case where the other bus bar is formed by processing a metal plate, the restraining portion may be formed in a predetermined shape during the molding process of the bus bar. Alternatively, when the other bus bar is attached to the insulator, the restraining portion may be bent so as to engage with the insulator.

1 電力変換装置
2 半導体モジュール
2b 正極端子
2c 負極端子
3 冷却器
4 コンデンサ(接続対象部品)
5 正極側バスバ(一方のバスバ)
6 負極側バスバ(他方のバスバ)
5a、6a 板部
5b、6b 接合部
6d 爪部(拘束部)
7 絶縁体
DESCRIPTION OF SYMBOLS 1 Power converter 2 Semiconductor module 2b Positive electrode terminal 2c Negative electrode terminal 3 Cooler 4 Capacitor (part to be connected)
5 Positive bus bar (one bus bar)
6 Negative bus bar (the other bus bar)
5a, 6a Plate part 5b, 6b Joint part 6d Claw part (restraint part)
7 Insulator

Claims (1)

複数の半導体モジュールのそれぞれから同一方向に突出する正極端子及び負極端子と所定の接続対象部品とを正極側バスバ及び負極側バスバを介して接続する半導体モジュールの端子接続構造であって、
前記正極側バスバ及び負極側バスバのそれぞれには、平坦に延びる板部と、前記板部から同一方向に屈曲して前記正極側端子又は前記負極側端子と接合される接合部とが設けられ、
前記正極側バスバ及び負極側バスバのそれぞれは、前記複数の半導体モジュール側から前記正極端子及び負極端子の突出方向に沿って、いずれか一方のバスバの板部、絶縁体、及び他方のバスバの板部の順で重なるように、かつ前記正極側バスバの前記接合部が前記正極端子に、前記負極側バスバの前記接合部が前記負極端子にそれぞれ接合するように配置され、
前記他方のバスバには、当該他方のバスバが前記突出方向に関して前記絶縁体から遠ざかる側に変位しないようにして前記絶縁体とかみ合う拘束部が設けられている半導体モジュールの端子接続構造。
A semiconductor module terminal connection structure for connecting a positive electrode terminal and a negative electrode terminal protruding in the same direction from each of a plurality of semiconductor modules and a predetermined connection target component via a positive electrode side bus bar and a negative electrode side bus bar,
Each of the positive electrode side bus bar and the negative electrode side bus bar is provided with a flat plate portion and a bonding portion bent in the same direction from the plate portion and joined to the positive electrode side terminal or the negative electrode side terminal,
Each of the positive-side bus bar and the negative-side bus bar includes a plate part of one of the bus bars, an insulator, and a plate of the other bus bar along the protruding direction of the positive and negative terminals from the plurality of semiconductor module sides. Arranged in such a manner that the joints of the positive-side bus bars are joined to the positive terminals and the joints of the negative-side bus bars are joined to the negative terminals,
A terminal connection structure for a semiconductor module, wherein the other bus bar is provided with a restraining portion that engages with the insulator so that the other bus bar is not displaced toward the side away from the insulator in the protruding direction.
JP2018036864A 2018-03-01 2018-03-01 Semiconductor module terminal connection structure Pending JP2019154124A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021039552A1 (en) 2019-08-26 2021-03-04 Agc株式会社 Cover member
WO2021054024A1 (en) * 2019-09-17 2021-03-25 パナソニックIpマネジメント株式会社 Capacitor and method for manufacturing capacitor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021039552A1 (en) 2019-08-26 2021-03-04 Agc株式会社 Cover member
WO2021054024A1 (en) * 2019-09-17 2021-03-25 パナソニックIpマネジメント株式会社 Capacitor and method for manufacturing capacitor

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