JP2019151881A - Heat dissipation member for electronic apparatus, method for manufacturing the same, and electronic apparatus - Google Patents

Abstract

To provide a heat dissipation member for electronic apparatuses, capable of efficiently dissipating the heat of an electronic apparatus.SOLUTION: The heat dissipation member for electronic apparatuses, capable of absorbing the heat of an electronic device to dissipate it to the outside includes a base material and a coating for covering at least a part of the surface of the base material. The coating consists of a metal oxide film having a porous structure having a plurality of acicular or tabular crystals arranged in a mesh shape or a frog shape; the metal oxide includes MLOand/or ZnO, where M and L are metal elements, for example, M:Zn and L:Fe; the metal oxide film shows an emissivity of 80% or more to infrared having a wavelength of 2-15 μm; and, for example, the electronic apparatus is a power module, and the heat dissipation member is a heat sink or a heat spreader used therefor.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a heat radiating member and the like that can efficiently dissipate heat generated by an electronic device.

  An electronic device equipped with an electronic device (semiconductor element or the like) has increased in heat generation due to high integration, large current, and the like. When heat dissipation of electronic devices becomes insufficient, malfunctions may occur, and joints and devices may be damaged. For this reason, in order to ensure the reliability and durability, an electronic device is often provided with a heat dissipation member that promotes heat dissipation. The heat radiating member is, for example, a heat sink or a heat spreader provided on one side or both sides of a power module (semiconductor device) on which a power device (power semiconductor) is mounted.

  By the way, heat dissipation (heat transfer) is generated not only by heat conduction and convection but also by heat radiation (heat radiation). Therefore, various proposals regarding materials that can improve thermal radiation are made, and related descriptions are given in, for example, the following patent documents.

JP 2013-95991 A JP 2013-144747 A JP 2014-181345 A WO2017 / 145915

Ewa Wackelgard, Solar Energy Materials & Solar Cells 56 (1998) 35-44

  Patent document 1 has proposed the metal foil which raised the emissivity by nickel roughening plating. However, its emissivity is no more than 0.68.

  Patent Document 2 proposes a thermal radiation paint composed of ceramic particles and a thermosetting binder (resin). However, this paint contains a lot of resin, which hinders the thermal conductivity of the heat dissipation member.

  Patent Document 3 proposes a heat radiation material that is made of iron manganese oxide, silica, silicon carbide, iron oxide, aluminum oxide, and the like, and is coated on the surface of an iron plate that has a high temperature of 700 to 1500 ° C. This heat radiation material only exhibits a high emissivity in a very high temperature range far exceeding the assumed temperature range of electronic equipment.

  Patent Document 4 proposes a metal oxide film excellent in light absorption. However, Patent Document 4 only specifically shows the reflectance mainly in the infrared region (wavelength: 200 to 1600 nm) very close to the visible light region. That is, Patent Document 4 does not specifically disclose the emissivity in the (middle) infrared region that is important for heat dissipation of electronic devices.

  By the way, even a substance with low reflectivity in the visible light range (that is, high absorption or emissivity) has a significantly high reflectivity in the (medium) infrared range (that is, low absorption or emissivity). Is shown in Non-Patent Document 1. As described above, it is generally difficult to predict the reflectance and emissivity in different wavelength regions (for example, the infrared region) based on the reflectance and emissivity in the visible light region.

  Note that an actual substance that is not an ideal (perfect) black body or mirror body has an emissivity between 0 and 1, and the emissivity usually varies depending on the wavelength. However, Patent Document 1 and Patent Document 2 only disclose the emissivity on a one-time basis, and do not disclose the wavelength region that generates the emissivity at all.

  This invention is made | formed in view of such a situation, and it aims at providing the heat radiating member for electronic devices etc. which can thermally radiate the heat_generation | fever of an electronic device efficiently.

  As a result of diligent research to solve this problem, the present inventor shows that a specific metal oxide film exhibits high emissivity in an operating temperature range of an electronic device or an infrared wavelength range corresponding thereto (unknown attribute). I found By developing this result into a specific heat radiating member, the present invention described below has been completed.

<< Heat dissipation material for electronic equipment >>
(1) The present invention is a heat radiating member for electronic equipment that absorbs heat generated by an electronic device and releases the heat to the outside, and includes a base material and a coating that covers at least a part of the surface of the base material.
The coating includes a metal oxide represented by the following formula (1) and / or ZnO, and a metal having a porous structure in which a plurality of needle-like or plate-like crystals are arranged in a mesh or sword shape. It is a heat radiating member for electronic equipment which consists of an oxide film.
M _x L _3-x O ₄ (1)
(In the above equation, M ≠ L,
M is selected from the group consisting of Mg, Fe, Zn, Mn, Cu, Co, Cr, Ni,
L is selected from the group consisting of Co, Al, Fe, and Cr, and x satisfies 0 ≦ x ≦ 1. )

(2) If the heat radiating member for electronic equipment (simply referred to as “heat radiating member”) of the present invention is used, the heat generated by the electronic equipment can be radiated efficiently, and the reliability and durability can be improved. The reason why such an effect can be obtained is considered as follows.

  The metal oxide film according to the present invention exhibits a high emissivity in the operating temperature range of electronic equipment (for example, 25 to 350 ° C., 50 to 300 ° C., and further 100 to 250 ° C.). In other words, the metal oxide film according to the present invention has high absorptivity with respect to electromagnetic waves (for example, infrared rays having a wavelength of 2 to 15 μm, 3 to 12 μm, or 3 to 10 μm) emitted in the use temperature range. Exhibits release properties.

  Since the heat dissipating member of the present invention is coated with such a metal oxide film, the heat generated by the electronic device can be efficiently absorbed and dissipated not only by heat conduction but also by heat radiation. Thus, the heat dissipating member of the present invention exhibits high heat dissipation and maintains the electronic device within a desired temperature.

<< Method of manufacturing heat dissipation member >>
The present invention can be grasped as a manufacturing method of the above-mentioned heat radiating member. For example, the present invention provides a deposition step of depositing a metal or metal compound containing one or more elements of Fe, Zn, Cu, Co, Cr, Ni, Mg, or Al on the surface of a substrate, and a group after the deposition step. And a heat treatment step for heat treating the material, and a method for producing a heat radiating member for electronic equipment in which a heat radiating member for electronic equipment in which at least a part of the surface of the base material is coated with a metal oxide film can be obtained.

"Electronics"
The present invention can also be grasped as an electronic device having the heat dissipation member described above. For example, the present invention may be an electronic device including an electronic device that is a heat generation source and the above-described heat dissipating member for an electronic device that is disposed on at least one side of the electronic device.

<Others>
Unless otherwise specified, “x to y” in this specification includes a lower limit value x and an upper limit value y. A range such as “a to b” can be newly established with any numerical value included in various numerical values or numerical ranges described in the present specification as a new lower limit value or upper limit value.

It is a schematic diagram which shows a mode that infrared rays are absorbed by a metal oxide film. It is explanatory drawing of the angle | corner which the crystal body makes with respect to a base material. It is a schematic diagram of the emissivity measuring apparatus. It is the graph which put together the wavelength distribution of the emissivity which concerns on a sample, and the wavelength distribution of the radiant energy density of a black body. It is the SEM image which observed the sample surface (coating surface). It is an X-ray diffraction pattern concerning a sample surface. It is a schematic diagram which shows one form of a power module. It is a schematic diagram which shows another form of a power module.

  One or two or more components arbitrarily selected from the present specification may be added to the above-described components of the present invention. The contents described in the present specification appropriately correspond not only to the heat dissipating member of the present invention but also to the manufacturing method and electronic equipment. A component related to the manufacturing method can also be a component related to an object. Which embodiment is the best depends on the target, required performance, and the like.

"Emissivity"
As described above, heat transfer is caused not only by heat conduction and convection but also by heat radiation (heat radiation). All objects emit light (electromagnetic waves) according to atomic vibrations unless they are at absolute zero (0K). A low temperature object mainly emits light in a long wavelength range, and a high temperature object emits a wide range of light from a long wavelength range to a short wavelength range. Even if the temperature of the object is constant, the radiant energy density of the light emitted from the object is different for each wavelength and has a wavelength distribution. The light emitted by an object has a correlation between radiant energy density (E), temperature (T), and wavelength (λ), and is formalized for (perfect) black bodies (Planck's radiation law / FIG. 4). reference).

  The tendency (wavelength distribution of radiant energy density) derived from Planck's radiation law also applies to objects other than black bodies, although their absolute values differ. An object in the operating temperature range (about 25 to 350 ° C.) of the electronic device emits substantially only infrared rays, and its radiant energy density is concentrated in the mid-infrared region or the vicinity thereof (λ = 2 to 15 μm). Yes. Accordingly, the higher the emissivity in such a wavelength range, the more the heat dissipation member absorbs the radiant energy emitted from the electronic device in the above-described operating temperature range, and the more efficient heat dissipation can be performed.

  The metal oxide film according to the present invention can exhibit an emissivity of 80% or more, 85% or more, or 90% or more for infrared rays having a wavelength of 2 to 15 μm, 3 to 12 μm, or 3 to 10 μm. . Therefore, the heat dissipating member of the present invention coated with the metal oxide film can exhibit at least a high heat dissipating property due to heat radiation in the operating temperature range of the electronic device.

《Metal oxide film》
(1) the metal oxide in the metal oxide film a metal oxide mainly constituting consists _M x L _{3-x O 4} and / or ZnO as shown in equation (1). In the present specification, one or both of these metal oxides are simply referred to as “metal oxide”. M _x L _3−x O ₄ may be a spinel type, particularly a spinel type containing Zn and Fe. In addition, when analyzed by X-ray diffraction, it is preferable that three or more peaks of M _x L _3−x O ₄ are observed within 2θ = 10 ° to 90 °.

(2) Form The metal oxide film is formed by forming a porous structure in which a large number of needle-like or plate-like crystals have an irregular network shape or sword mountain shape. Many needle-like crystals may have a mesh shape in which the longitudinal direction extends substantially parallel to the film surface and intersects with each other, or may have a sword mountain shape in which the longitudinal direction extends in the film thickness direction. A large number of plate-like crystals may have a wall shape with a certain width, extend in the film thickness direction, and may have a mesh shape randomly extending in the direction along the film surface. In addition, it is preferable that the metal oxide film is directly formed on the surface of the base material because a heat radiating member having excellent durability can be obtained at low cost.

  The metal oxide film is presumed to exhibit a high emissivity in a specific wavelength range due to not only the material (metal oxide) but also its form. This point will be specifically described with reference to FIG. 1 schematically showing a metal oxide film.

  As shown in FIG. 1, the metal oxide film 10 has a porous structure including, for example, a crystal body 12 extending from the surface of the substrate 16. A part of the light 1 (infrared ray) incident on the metal oxide film 10 is absorbed by the crystal body 12 containing the metal oxide, and the rest is reflected by the wall surface (surface) of the crystal body 12. The reflected light enters the pores of the porous structure (that is, the internal space of the adjacent crystal body 12), a part of which is absorbed by the crystal body 12, and the remaining part is the wall surface (surface) of the crystal body 12. ) Is reflected. By repeating this, the reflected light is greatly reduced, and as a result, most of the incident light 1 is absorbed by the crystal body 12. Thus, it is considered that the metal oxide film 10 almost absorbs the light 1 in a specific wavelength region and exhibits a high absorption rate (that is, emissivity) in the (middle) infrared region.

  In addition, although the present situation is not certain, other factors that cause the metal oxide film to exhibit high emissivity are that the specific surface area of the metal oxide film is large and that the material constituting the metal oxide film is in a specific wavelength range. It is also conceivable that the lattice vibration state is affected.

  In view of such circumstances, for example, the distance in the direction parallel to the film surface of the adjacent crystalline body having a porous structure (the crystalline body 12 schematically shown in FIG. 1) is 10 μm or less, 5 μm or less, or 2 μm or less. Preferably there is. The height of the crystal (the length in the direction substantially perpendicular to the film surface) is preferably 0.02 μm or more, more preferably 0.1 μm or more. Furthermore, the thickness of the crystal (width in the direction substantially parallel to the film surface) is preferably 0.2 μm or less, and more preferably 0.1 μm or less.

  Further, in the crystal constituting the metal oxide film, the connection between the tip and the bottom in the width direction is θ = 45 to 90 °, 60 ° to 90 °, or 65 ° to 90 °. It is preferable to extend to the surface side of the material film. For example, as shown in FIG. 2, the formed angle (θ) connects the tip 14 of the plate-like crystal body 12 and the center in the short direction of the bottom surface (corresponding to the surface of the substrate 16 in FIG. 2). The line is determined as the angle formed with respect to the bottom surface.

(3) Manufacturing method A metal oxide film is obtained by heat-processing, after forming a metal or a metal compound one or more layers on a base material by electrodeposition, vapor deposition, etc., for example. In the following, a method for forming a metal oxide film on a substrate by electrodeposition and heat treatment will be described as an example.

  First, one or more metal elements of Fe, Zn, Cu, Co, Cr, Ni, Mg, or Al, and a metal (alloy) or metal compound containing one or more of these metal elements are deposited on the surface of the base material (deposition) Process). The electrodeposition solution (electrolytic solution) preferably contains at least one of these metal elements and further contains an organic acid. By adjusting the composition of the electrodeposition solution, a metal oxide film having a desired composition can be obtained. The electrodeposition liquid is prepared, for example, as a component metal element as sulfate, amide sulfate, or chloride.

  The organic acid forms a complex with the metal element and contributes to the formation of an electrodeposited layer incorporating carbon and oxygen. By heat-treating the electrodeposited layer thus obtained, the form control of the metal oxide film becomes easy. As the organic acid, for example, one or more of L-ascorbic acid, citric acid, and fumaric acid may be used.

  By performing the deposition step using the base material as a cathode, it is possible to form a metal oxide film having excellent adhesion. When the base material is a non-metal (non-conductive material) or the like, the surface of the base material may be subjected to a conductive treatment or the like.

The concentration of the organic acid or organic acid salt in the electrodeposition liquid is preferably 0.1 g / L or more in total. The current density may be 0.1 A / dm ^{2 to} 30 A / dm ² , the temperature of the electrodeposition solution may be 0 ° C. to 90 ° C., and the electrodeposition time may be 1 second to 60 minutes.

  Next, in the heat treatment step, the base material (deposition layer) after the precipitation step is preferably heated in an oxidizing atmosphere (such as an air atmosphere). The heating time may be adjusted in the range of 200 ° C. to 600 ° C., for example, depending on the substrate. The heating time is preferably 1 minute to 10 hours, 10 minutes to 5 hours, and further 0.5 to 3 hours.

《Heat dissipation member》
The heat radiating member has a base material and a metal oxide film covering at least a part of the surface thereof. The metal oxide film is as described above. The substrate is preferably made of a metal having excellent thermal conductivity. For example, the base material may be made of an iron-based metal (pure Fe, Fe alloy), an aluminum-based metal (pure Al, Al alloy), a copper-based metal (pure Cu, Cu alloy), or the like.

  The specific form of the heat dissipation member is not limited. A substrate on which an insulating layer (film) or a wiring layer is disposed may be used, or a heat sink or a heat spreader may be used.

  The heat dissipating member preferably further has an adhesion layer made of one or more of carbon, carbon nanotubes, or graphene on the surface of the coating (particularly the surface of the metal oxide film). The adhesion layer made of such a carbon-based material is black and has a high emissivity. Note that the adhesion layer may not only cover the crystal of the porous structure of the metal oxide film but also fill the pores. Further, the adhesion layer may be formed using a black pigment or dye other than the carbon-based material.

"Electronics"
(1) As long as electronic equipment is thermally radiated (heat dissipated) by a heat dissipating member (particularly a metal oxide film), its type, configuration, use, etc. are not limited. Electronic devices usually have one or more electronic devices that are the main heat sources. A typical example of an electronic device is a semiconductor element. The semiconductor element may be an integrated circuit (IC, LSI) constituting a CPU, a memory, or the like, or a so-called power semiconductor (power transistor, thyristor, etc.). Examples of the power transistor include an IGBT (Insulated Gate Bipolar Transistor) and an FWD (Free Wheeling Diode). A typical example of an electronic device is a power module on which a power device is mounted, and the power module is used for an inverter for driving a motor or the like.

(2) FIG. 7A shows an outline of a power module 2 which is an example of an electronic device using the heat dissipation member of the present invention. The power module 2 joins the power device 20 and the substrate 21 via the insulating layer 22, the power device 20, a substrate 21 (heat dissipation member) on which the power device 20 is mounted, an insulating layer 22 that insulates the power device 20 and the substrate 21. A bonding layer 23 for sealing, and a sealing body 24 for sealing the power device 20. The power device 20 is made of IGBT, FWD or the like (including wiring), the insulating layer 22 and the sealing body 24 are made of resin, and the bonding layer 23 is made of solder, heat conductive grease or the like.

  The board | substrate 21 consists of the metal plate 211 (base material) and the film 212 which coat | covers the surface. The metal plate 211 is made of a highly heat conductive aluminum metal or copper metal. The coating 212 is made of a metal oxide film according to the present invention.

(3) FIG. 7B shows an outline of a power module 3 which is another example of an electronic device using the heat dissipation member of the present invention. In addition, about the structure similar to the power module 2, the same code | symbol or the same name is attached | subjected, and the description is abbreviate | omitted.

  In the power device 3, the power device 20 is mounted on one surface side of the substrate 32 through the insulating layer 22 and the bonding layer 331. A heat sink 31 (heat radiating member) is disposed on the other surface side of the substrate 32 via a bonding layer 332. The heat sink 31 includes a metal plate 311 (base material) and a coating 312 covering the surface thereof. Similarly to the substrate 21, the metal plate 311 is made of a highly heat conductive metal, and the coating 312 is made of the metal oxide film according to the present invention.

  In any form, the heat generated by the power device 20 is thermally conducted and radiated to the substrate 21 or the heat sink 31 and absorbed, and is radiated from the substrate 21 or the heat sink 31 to the outside by the conduction and heat radiation.

  A sample in which a metal oxide film (film) was formed on a substrate was manufactured. While measuring the emissivity of this sample, the film was observed. Based on such a specific example, the present invention will be described in more detail below.

<Production of sample>
(1) Precipitation process The pure iron plate of 4 cm square x 1 mm thickness was prepared as a base material. An aqueous solution in which FeSO ₄ .7H ₂ O: 293 g, ZnSO ₄ .7H ₂ O: 10 g, L-ascorbic acid: 3 g, and citric acid: 1 g were prepared per 1 L as an electrodeposition solution.

The substrate was immersed in an electrodeposition solution, and direct current was applied as a cathode: substrate and anode: pure iron. At this time, the bath temperature of the electrodeposition solution was 50 ° C., the current density was 5 A / dm ² , and the energization time was 10 minutes. Thus, an alloy film having a thickness of about 10 μm was deposited on the surface of the substrate.

(2) Heat treatment step The substrate after the precipitation step was put in an electric furnace and heated at 580 ° C for 1 hour in an air atmosphere. Thereafter, the substrate taken out from the electric furnace was allowed to cool to room temperature in the atmosphere. Thus, a sample in which a film was formed on the substrate was obtained.

<Measurement of emissivity>
(1) Using the measuring apparatus outlined in FIG. 3, the emissivity of the sample was determined by an indirect measurement method. That is, after measuring the total reflectivity of the sample, the emissivity was calculated from Kirchhoff's law (emissivity = 100% -total reflectivity). Specifically, the measurement was performed using a Fourier transform infrared spectrophotometer (UV-3600 / ISR-3100, manufactured by Shimadzu Corporation) with an integrating sphere whose inside was coated with gold. The measurement results are shown in FIG. In FIG. 4, the wavelength distribution of the radiant energy density of the black body determined by Planck's radiation law is also shown.

(2) As apparent from FIG. 4, the sample exhibited a high emissivity of 80% or more in the infrared region having a wavelength of 2 to 15 μm. It was also found that even in the same infrared region, the emissivity rapidly decreases to about 40% in the infrared region having a wavelength of 16 to 18 μm. Considering these matters together, it was found that the sample exhibited a specific and stable high emissivity only in the wavelength range of 2 to 15 μm.

  Furthermore, it can be seen from the wavelength distribution of the radiant energy density of the black body that infrared rays having a high radiant energy density are emitted mainly from objects of 50 to 300 ° C. in the wavelength region of 2 to 15 μm. Therefore, infrared rays emitted from an object in the temperature range (50 to 300 ° C.) are efficiently absorbed and emitted by the sample having a high emissivity in the corresponding wavelength range (2 to 15 μm). From this, the heat radiating member which consists of the structure similar to the sample exhibits high thermal radiation in the use temperature range (25-350 degreeC) of an electronic device, and becomes excellent in heat dissipation.

<< Surface observation >>
The coating surface of the sample was observed with a scanning electron microscope (SEM). The SEM image is shown in FIG. As can be seen from FIG. 5, the coating film of the sample has a porous structure composed of a large number of plate-like crystals extending from the substrate surface. More specifically, a large number of plate-like crystals extend in a wall shape in the thickness direction of the film with a certain width, and also randomly in the surface direction (lateral direction in plan view). Thus, it was found that a film having a complicated network-like porous structure as a whole was formed on the substrate surface.

  Using the SEM image shown in FIG. 5, the slicing method (a method of measuring the distance between adjacent crystal bodies along the straight line by drawing straight lines at equal intervals in the vertical and horizontal directions of the SEM image), The interval between adjacent crystals was measured. For the five regions including the observation region shown in FIG. 5, the interval between adjacent crystal bodies was also measured from the SEM image. As a result, the upper limit value of the interval was 0.7 μm. From this, it was found that the interval between adjacent crystal bodies (distance in the direction parallel to the film surface) was 0.7 μm or less.

<< Section observation >>
Three places of the cross section which cut | disconnected the film of the sample in the thickness direction were observed by SEM. Based on the SEM image, the angle (θ) shown in FIG. 2 was measured. The lower limit was 71 °. From this, it was found that the angle formed by the crystal with respect to the base material was 71 ° or more.

<< XRD >>
The result of analyzing the film of the sample by X-ray diffraction is shown in FIG. It was found that the coating was mainly made of spinel metal oxide (ZnFe ₂ O ₄ or Fe ₃ O ₄ ) and also contained ZnO. Moreover, when the film was analyzed with the transmission electron microscope (TEM), it was confirmed that the spinel type metal oxide contains ZnFe ₂ O ₄ .

《Supplement》
In the embodiment described above, as an example, a sample (heat radiating member) in which a metal oxide film containing ZnFe ₂ O ₄ , Fe ₃ O ₄ and ZnO is formed on an iron plate (base material) is shown. However, the base material may be an aluminum-based metal or a copper-based metal, and the composition and form of the metal oxide film can be adjusted to a desired range. This is clear from the description of WO2017 / 145915 previously proposed by the present inventor. In this respect, the contents described in the publication form part of the present specification as appropriate within the scope of the gist of the present invention.

DESCRIPTION OF SYMBOLS 10 Metal oxide film 12 Crystal 14 Tip of crystal 16 Base material

Claims (10)

A heat dissipation member for electronic equipment that absorbs heat generated by an electronic device and releases the heat to the outside.
A substrate and a coating covering at least a part of the surface of the substrate;
The coating includes a metal oxide represented by the following formula (1) and / or ZnO, and a metal having a porous structure in which a plurality of needle-like or plate-like crystals are arranged in a mesh or sword shape. A heat dissipating member for electronic equipment comprising an oxide film.
M _x L _3-x O ₄ (1)
(In the above equation, M ≠ L,
M is selected from the group consisting of Mg, Fe, Zn, Mn, Cu, Co, Cr, Ni,
L is selected from the group consisting of Co, Al, Fe, and Cr, and x satisfies 0 ≦ x ≦ 1. )   2. The heat dissipation member for electronic equipment according to claim 1, wherein the metal oxide film has an emissivity of 80% or more for infrared rays having a wavelength of 2 to 15 μm.   The heat dissipating member for an electronic device according to claim 1, wherein the heat dissipating member is an heat sink or a heat spreader.   The said base material consists of metals, The heat radiating member for electronic devices in any one of Claims 1-3. The M is Zn, the L is Fe, and the metal oxide film contains at least ZnFe ₂ O ₄ and ZnO.   The heat dissipation member for an electronic device according to any one of claims 1 to 5, wherein a distance between adjacent crystalline bodies of the porous structure in a direction parallel to the surface of the metal oxide film is 10 µm or less.   7. The crystal body according to claim 1, wherein a connection between the tip and the center in the width direction of the bottom surface extends to the surface side of the metal oxide film at 45 to 90 ° with the bottom surface. Heat dissipation member for electronic equipment.   The said coating film is a heat radiating member for electronic devices in any one of Claims 1-7 which further has the adhesion layer which consists of 1 or more types of carbon, a carbon nanotube, or a graphene on the surface of the said metal oxide film. A deposition step of depositing a metal or metal compound containing one or more elements of Fe, Zn, Cu, Co, Cr, Ni, Mg or Al on the surface of the substrate;
A heat treatment step of heat treating the substrate after the precipitation step,
The manufacturing method of the heat radiating member for electronic devices from which the heat radiating member for electronic devices in any one of Claims 1-8 by which at least one part surface of this base material was coat | covered with the metal oxide film. An electronic device that is a heat source;
The heat dissipating member for electronic equipment according to any one of claims 1 to 8, disposed on at least one surface side of the electronic device,
Electronic equipment comprising.