JP2019149508A - Wiring board and electronic apparatus - Google Patents

Wiring board and electronic apparatus Download PDF

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JP2019149508A
JP2019149508A JP2018034558A JP2018034558A JP2019149508A JP 2019149508 A JP2019149508 A JP 2019149508A JP 2018034558 A JP2018034558 A JP 2018034558A JP 2018034558 A JP2018034558 A JP 2018034558A JP 2019149508 A JP2019149508 A JP 2019149508A
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power supply
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誠司 服部
Seiji Hattori
誠司 服部
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Kyocera Corp
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Abstract

To provide a wiring board capable of more effectively supplying stable electric power, and an electronic apparatus.SOLUTION: A wiring board includes: a core insulation layer; insulation layers above and below the core insulation layer; first connection terminals on the uppermost surface; second connection terminals on the lowermost surface; and a wiring conductor and a voltage regulator. The first connection terminal connected to the voltage regulator is located in a first region, and the other first connection terminals are located in a second region separated from the first region. A wiring conductor for a signal related to signal transmission is located so as to avoid the first region and a region between the first region and the second region in plan view, a wiring 252 is located between and across an expansion region R228 located on an outer edge side of the insulation layer with respect to the positions of the first connection terminals and the second connection terminals and the second region in plan view between insulation layers higher than the core insulation layer, and the wiring is located between and across the expansion region R228 and the arrangement region of the second connection terminal in plan view between insulation layers lower than the core insulation layer.SELECTED DRAWING: Figure 4

Description

この開示は、配線基板及び電子装置に関する。   The present disclosure relates to a wiring board and an electronic device.

半導体素子といった電子部品を電子装置の基板に接続する配線基板がある。電子部品には、配線基板の貫通導体などを介して電力が供給され、また、信号の送受信が行われる。電子部品での電力消費量などに変動がある場合などには、供給される電力が貫通導体のインピーダンスやインダクタンスの影響を受けて安定に保てない場合がある。   There is a wiring board for connecting an electronic component such as a semiconductor element to a board of an electronic device. Electric power is supplied to the electronic component via a through conductor of the wiring board, and signals are transmitted and received. When there are fluctuations in the power consumption of electronic components, the supplied power may not be kept stable due to the influence of the impedance and inductance of the through conductor.

特許文献1では、配線基板の上面に半導体素子及び電圧レギュレータを設け、上面の近くにメッシュ状の導体部分を有する電圧面を設けて当該電圧面を介して半導体素子に低インピーダンス及び低インダクタンスで電力を供給する構成が開示されている。   In Patent Document 1, a semiconductor element and a voltage regulator are provided on the upper surface of a wiring board, a voltage surface having a mesh-like conductor portion is provided near the upper surface, and power is supplied to the semiconductor element through the voltage surface with low impedance and low inductance. A configuration for supplying the power is disclosed.

米国特許第7085143号明細書US Patent No. 7085143

しかしながら、配線基板には、電子装置の基板に接続される下面と電子部品に接続される上面との間をつなぐ数多くの信号伝送経路が伸びている。これらの信号伝送経路は、各電圧面において、電流の流れを阻害するので、電子部品に対して電圧レギュレータから効果的に安定して電力を供給することができないという課題があった。   However, a large number of signal transmission paths connecting the lower surface connected to the substrate of the electronic device and the upper surface connected to the electronic component extend on the wiring board. Since these signal transmission paths hinder the flow of current at each voltage plane, there is a problem that power cannot be effectively and stably supplied to the electronic component from the voltage regulator.

本開示の目的は、より効果的に安定した電力の供給を行うことのできる配線基板及び電子装置を提供することにある。   An object of the present disclosure is to provide a wiring board and an electronic device that can supply power more effectively and stably.

上記目的を達成するため、本開示の一の態様は、コア絶縁層と、コア絶縁層の上側及び下側に積層された状態で位置する複数の絶縁層と、上側の絶縁層における最上面に位置する第1の接続端子と、下側の絶縁層における最下面に位置する第2の接続端子と、接地用、電力用及び信号用の配線導体と、第1の接続端子のうち、接地用の配線導体に接続している複数の接地端子の一部、及び電力用の配線導体に接続している複数の電力供給端子の一部に接続している電圧レギュレータと、を備え、電圧レギュレータと接続している接地端子及び電力供給端子は、第1の領域に位置し、第1の領域外の第1の接続端子は、第1の領域と離隔した第2の領域に位置し、第1の接続端子と第2の接続端子との間の信号伝送に係る信号用の配線導体は、平面視で、第1の領域、及び第1の領域と第2の領域との間の領域を避ける状態で位置しており、信号用の配線導体の一部は、上側の絶縁層同士の間において、平面視で信号用の配線導体が接続する第1の接続端子及び第2の接続端子の各位置よりも絶縁層の外縁側に位置する展開領域と第2の領域との間にかけて位置しており、下側の絶縁層同士の間において、平面視で展開領域と第2の接続端子の配置領域との間にかけて位置していることを特徴とする配線基板である。   In order to achieve the above object, one aspect of the present disclosure includes a core insulating layer, a plurality of insulating layers positioned in a stacked state on the upper side and the lower side of the core insulating layer, and an uppermost surface of the upper insulating layer. Among the first connection terminal, the second connection terminal located on the lowermost surface of the lower insulating layer, the ground conductors for power, signal and signal, and the first connection terminal for grounding A voltage regulator connected to a part of the plurality of ground terminals connected to the wiring conductor and a part of the plurality of power supply terminals connected to the wiring conductor for power. The connected ground terminal and power supply terminal are located in the first region, and the first connection terminal outside the first region is located in the second region separated from the first region. The signal wiring conductor for signal transmission between the connection terminal and the second connection terminal is: It is located in a state avoiding the first region and the region between the first region and the second region in plan view, and a part of the signal wiring conductor is between the upper insulating layers. In FIG. 3, the first and second connection terminals to which the signal wiring conductor is connected in plan view are positioned between the development region and the second region located on the outer edge side of the insulating layer with respect to the positions of the first connection terminal and the second connection terminal. The wiring board is located between the lower insulating layers and between the development region and the second connection terminal arrangement region in a plan view.

また、本開示の他の一の態様は、上述の配線基板と、第2の領域に位置する第1の接続端子に接続される電子部品と、を備えることを特徴とする電子装置である。   Another aspect of the present disclosure is an electronic device including the above-described wiring board and an electronic component connected to a first connection terminal located in the second region.

本開示の内容によれば、配線基板において、より効果的に安定した電力の供給を行うことができるという効果がある。   According to the contents of the present disclosure, there is an effect that stable power can be supplied more effectively in the wiring board.

配線基板を含む電子モジュールの全体構成図である。It is a whole block diagram of the electronic module containing a wiring board. 電子装置の断面構造の一部を模式的に説明する図である。It is a figure which illustrates a part of sectional structure of an electronic device typically. 最上面の配線層のうち一部を上面側から見た平面図である。It is the top view which looked at a part among wiring layers of the uppermost surface from the upper surface side. コア基板より上側のビルドアップ層の配線層のうち一部及び当該配線層の上の絶縁層を貫通する貫通導体のうち一部を上面側から重ねて見た平面図である。FIG. 5 is a plan view of a part of a wiring layer of a buildup layer above a core substrate and a part of a through conductor penetrating an insulating layer on the wiring layer as viewed from the upper surface side. コア基板より上側のビルドアップ層の配線層のうち一部及び当該配線層の上の絶縁層を貫通する貫通導体のうち一部を上面側から重ねて見た平面図である。FIG. 5 is a plan view of a part of a wiring layer of a buildup layer above a core substrate and a part of a through conductor penetrating an insulating layer on the wiring layer as viewed from the upper surface side. 上側導体層の一部及び当該上側導体層の一部の上の絶縁層を貫通する貫通導体の一部を上面側から重ねて見た平面図である。FIG. 5 is a plan view of a part of an upper conductor layer and a part of a penetrating conductor penetrating an insulating layer on a part of the upper conductor layer as viewed from the upper surface side. 下側導体層の一部及び当該下側導体層の上でコア絶縁層を貫通するコア貫通導体の一部を上面側から重ねて見た平面図である。FIG. 5 is a plan view of a part of a lower conductor layer and a part of a core through conductor that penetrates a core insulating layer on the lower conductor layer as viewed from the upper surface side. コア基板より下側のビルドアップ層の配線層のうち一部及び当該配線層の上で絶縁層を貫通する貫通導体を上面側から重ねて見た平面図である。FIG. 3 is a plan view of a part of a wiring layer of a build-up layer below a core substrate and a through conductor penetrating an insulating layer on the wiring layer as viewed from above. コア基板より下側のビルドアップ層の配線層のうち一部及び当該配線層の上で絶縁層を貫通する貫通導体を上面側から重ねて見た平面図である。FIG. 3 is a plan view of a part of a wiring layer of a build-up layer below a core substrate and a through conductor penetrating an insulating layer on the wiring layer as viewed from above. 最下面の配線層のうち一部及び当該配線層の上で絶縁層を貫通する貫通導体を上面側から重ねて見た平面図である。It is the top view which looked at the through conductor which penetrates an insulating layer on a part and wiring layer of the lowermost layer from the upper surface side.

以下、本開示に係る実施の形態を図面に基づいて説明する。
図1は、本実施形態の配線基板100を含む電子モジュール1の全体構成図である。
Hereinafter, embodiments according to the present disclosure will be described with reference to the drawings.
FIG. 1 is an overall configuration diagram of an electronic module 1 including a wiring board 100 of the present embodiment.

電子モジュール1は、モジュール基板200と、当該モジュール基板200上に位置する電子装置2とを備える。電子装置2は、配線基板100と、電子部品とを備える。配線基板100は、平面視で正方形又は長方形であって、上面側(モジュール基板200との接続面とは反対側)に、2個の電圧レギュレータ60(Voltage Regulator Module;VRM)を左右対称に有しており、また、当該上面側中央部には、電子部品としてICチップやLSIなどの半導体素子70が接続されている。モジュール基板200上の配線には、その他電子部品や配線基板が複数接続されていてよい。   The electronic module 1 includes a module substrate 200 and an electronic device 2 located on the module substrate 200. The electronic device 2 includes a wiring board 100 and electronic components. The wiring board 100 is square or rectangular in plan view, and has two voltage regulators 60 (Voltage Regulator Modules; VRM) symmetrically on the upper surface side (the side opposite to the connection surface with the module substrate 200). In addition, a semiconductor element 70 such as an IC chip or LSI is connected as an electronic component to the central portion on the upper surface side. A plurality of other electronic components and wiring boards may be connected to the wiring on the module board 200.

図2は、本実施形態の電子装置2の断面構造の一部を模式的に説明する図である。
図2(a)は、図1の断面線XXで切断した断面であり、図2(b)は、図1の断面線YYで切断した断面である。
FIG. 2 is a diagram schematically illustrating a part of the cross-sectional structure of the electronic device 2 of the present embodiment.
2A is a cross section cut along a cross-sectional line XX in FIG. 1, and FIG. 2B is a cross section cut along a cross-sectional line YY in FIG.

配線基板100は、コア基板30と、当該コア基板30を上下で挟むビルドアップ層20、40と、当該ビルドアップ層20、40のコア基板30と接する側とは反対側をそれぞれ覆うソルダーレジスト層10、50と、ビルドアップ層20の上面側(コア基板30との接触面とは反対側)に位置する電圧レギュレータ60(Voltage Regulator Module;VRM)と、を備える。半導体素子70の動作に応じて当該半導体素子70に供給される電力の電圧を所定の動作電圧で維持するための従来周知のものである。   The wiring substrate 100 includes a core substrate 30, build-up layers 20 and 40 sandwiching the core substrate 30 above and below, and a solder resist layer that covers the opposite side of the build-up layers 20 and 40 from the side in contact with the core substrate 30. 10 and 50, and a voltage regulator 60 (Voltage Regulator Module; VRM) positioned on the upper surface side of the buildup layer 20 (on the side opposite to the contact surface with the core substrate 30). This is well known in the art for maintaining the voltage of the power supplied to the semiconductor element 70 at a predetermined operating voltage according to the operation of the semiconductor element 70.

配線基板100の積層方向について、コア基板30の上側に位置するビルドアップ層20は、積層された状態の複数(3つ)の絶縁層I21、I22、I23と、当該絶縁層I21〜I23の上面側(表面)にそれぞれ位置する配線層L21、L22、L23とを含む。絶縁層I21〜I23は、積層方向(上下方向)について内部を貫通する貫通導体231、232、233を有し、配線層L21〜L23及び上側導体層L31の間を電気的に接続している。   With respect to the stacking direction of the wiring substrate 100, the buildup layer 20 positioned on the upper side of the core substrate 30 includes a plurality of (three) insulating layers I21, I22, I23 in a stacked state and the upper surfaces of the insulating layers I21 to I23. Wiring layers L21, L22, and L23 located on the side (surface). The insulating layers I21 to I23 have through conductors 231, 232, and 233 that penetrate the inside in the stacking direction (vertical direction), and electrically connect the wiring layers L21 to L23 and the upper conductor layer L31.

コア基板30は、コア絶縁層I31に対し、上面側に上側導体層L31を有し、下面側に下側導体層L32を有している。コア絶縁層I31には、スルーホール320が内部を貫通しており、当該スルーホール320の表面を導電性のコア貫通導体331で被覆することで、当該コア貫通導体331により上側導体層L31と下側導体層L32とを電気的に接続している。   The core substrate 30 has an upper conductor layer L31 on the upper surface side and a lower conductor layer L32 on the lower surface side with respect to the core insulating layer I31. A through hole 320 passes through the core insulating layer I31, and the surface of the through hole 320 is covered with a conductive core through conductor 331 so that the core through conductor 331 and the upper conductor layer L31 are connected to the core insulating layer I31. The side conductor layer L32 is electrically connected.

配線基板100の積層方向について、コア基板30の下側に位置するビルドアップ層40は、積層された状態の複数(3つ)の絶縁層I44、I45、I46と、当該絶縁層I44〜I46の下面側にそれぞれ位置する配線層L44、L45、L46とを含む。絶縁層I44〜I46は、積層方向(上下方向)について内部を貫通する貫通導体434、435、436を有し、配線層L44〜L46及び下側導体層L32の間を電気的に接続している。   With respect to the stacking direction of the wiring substrate 100, the buildup layer 40 located below the core substrate 30 includes a plurality of (three) insulating layers I44, I45, I46 in a stacked state, and the insulating layers I44 to I46. Wiring layers L44, L45, and L46 located on the lower surface side are included. The insulating layers I44 to I46 have through conductors 434, 435, and 436 penetrating inside in the stacking direction (vertical direction), and electrically connect the wiring layers L44 to L46 and the lower conductor layer L32. .

ビルドアップ層20の上面側(最上面)には、複数の電極パッド211(図3参照。第1の接続端子。ここでは、電力供給パッド211b及び接地パッド211c)が位置している。ソルダーレジスト層10は、これらの電極パッド211の範囲を露出するように開口を有する。電力供給パッド211b(電力供給に係る電力用の配線導体に接続されている電力供給端子)及び接地パッド211c(接地用の配線導体に接続されている接地端子)のうち一部は、半田などの接続導体61を介して電圧レギュレータ60に接続されており、残りの電極パッド211は、接続導体71を介して半導体素子70に接続される。   On the upper surface side (uppermost surface) of the buildup layer 20, a plurality of electrode pads 211 (see FIG. 3, first connection terminals, here, power supply pads 211 b and ground pads 211 c) are located. The solder resist layer 10 has openings so as to expose the range of these electrode pads 211. Some of the power supply pads 211b (power supply terminals connected to power wiring conductors for power supply) and the ground pads 211c (ground terminals connected to ground wiring conductors) are made of solder or the like. The remaining electrode pad 211 is connected to the semiconductor element 70 via the connection conductor 71 and is connected to the voltage regulator 60 via the connection conductor 61.

ビルドアップ層40の下面側(最下面)には、絶縁層I46を貫通する貫通導体の配列に応じた配列パターンで外部装置などに接続するための複数の外部接続パッド416(図10参照。第2の接続端子。ここでは、電力供給パッド416b及び接地パッド416c)が位置している。ソルダーレジスト層50は、これらの外部接続パッド416の範囲を露出するように開口を有する。
配線層L21〜L23、L44〜L46、上側導体層L31、下側導体層L32、貫通導体231〜233、434〜436、コア貫通導体331や後述のランド262c、263b、361c、362b、464c、465bなどが本実施形態の配線基板100で接地、電力供給及び信号伝送をそれぞれ行う配線導体となる。
On the lower surface side (lowermost surface) of the buildup layer 40, a plurality of external connection pads 416 (see FIG. 10, see FIG. 10) for connection to an external device or the like in an array pattern corresponding to the array of through conductors that penetrate the insulating layer I46. 2 connection terminals, where a power supply pad 416b and a ground pad 416c) are located. The solder resist layer 50 has openings so as to expose the range of these external connection pads 416.
Wiring layers L21 to L23, L44 to L46, upper conductor layer L31, lower conductor layer L32, through conductors 231 to 233 and 434 to 436, core through conductor 331 and lands 262c, 263b, 361c, 362b, 464c and 465b described later Are the wiring conductors that perform grounding, power supply, and signal transmission on the wiring board 100 of the present embodiment.

電圧レギュレータ60に接続される電極パッド211間の距離と外部接続パッド416間の距離とは等しく、電極パッド211から外部接続パッド416まで貫通導体を介して直線で接続される。半導体素子70に接続される電極パッド211間の距離は、外部接続パッド416間の距離よりも狭く、配線層L22、L23、L44、L45などで貫通導体の位置が調整される。   The distance between the electrode pads 211 connected to the voltage regulator 60 and the distance between the external connection pads 416 are equal, and the electrode pad 211 and the external connection pad 416 are connected in a straight line through the through conductor. The distance between the electrode pads 211 connected to the semiconductor element 70 is narrower than the distance between the external connection pads 416, and the position of the through conductor is adjusted by the wiring layers L22, L23, L44, L45 and the like.

絶縁層I21〜I23、I44〜I46及びコア絶縁層I31としては、例えば、絶縁性の各種樹脂材料が用いられるが、その他各種有機化合物や無機材料(セラミクス)が用いられてもよい。貫通導体には、タングステンや銅などのうち、絶縁層の材質に応じて適切な組み合わせとなるものが用いられる。   As the insulating layers I21 to I23, I44 to I46 and the core insulating layer I31, for example, various insulating resin materials are used, but various other organic compounds and inorganic materials (ceramics) may be used. As the through conductor, a suitable combination of tungsten and copper according to the material of the insulating layer is used.

なお、絶縁層I21〜I23、I44〜I46、コア絶縁層I31及び配線層L21〜L23、L44〜L46、上側導体層L31、下側導体層L32の厚さの比や、貫通導体、電極パッド211及び外部接続パッド416の形状、サイズなどは、説明のため強調又は簡略化したものであり、特定の値や形状を反映したものではない。また、ここでいう上下は、説明の便宜上のものであり、固定されるものではない。保管時や利用時の向きなどは、適宜変更されてよい。   It should be noted that the insulating layers I21 to I23, I44 to I46, the core insulating layer I31 and the wiring layers L21 to L23, L44 to L46, the thickness ratio of the upper conductor layer L31, the lower conductor layer L32, the through conductor, and the electrode pad 211 In addition, the shape and size of the external connection pads 416 are emphasized or simplified for the sake of explanation, and do not reflect specific values or shapes. The upper and lower parts here are for convenience of explanation and are not fixed. The direction during storage or use may be changed as appropriate.

図3は、ビルドアップ層20の配線層L21のうち一部を上面側から見た平面図である。ここでは、平面視で図1の配線基板100における左上角を含む一部領域RULに対応する1/4を示すが、残りの部分もほぼ同様の並びとなっている。   FIG. 3 is a plan view of a part of the wiring layer L21 of the buildup layer 20 as viewed from the upper surface side. Here, ¼ corresponding to a partial region RUL including the upper left corner in the wiring substrate 100 of FIG. 1 is shown in plan view, but the remaining portions are also arranged in substantially the same manner.

配線層L21は、接地面241を有する。接地面241の内側には、大小の電極パッド211が二次元配列で位置している。これらのうち、配線層L21の中央(図面の右下部分)に配列された小型の電極パッド211は、半導体素子70に接続されるものである。また、配線層L21の外縁寄り(図面の左下部分)に配列された大型の電極パッド211は、電圧レギュレータ60に接続されている。大型の電極パッド211の平面視位置は、それぞれ、外部接続パッド416(図10参照)の平面視位置と一致している。   The wiring layer L21 has a ground plane 241. Inside the ground plane 241, large and small electrode pads 211 are positioned in a two-dimensional array. Among these, the small electrode pads 211 arranged in the center of the wiring layer L <b> 21 (lower right part of the drawing) are connected to the semiconductor element 70. A large electrode pad 211 arranged near the outer edge of the wiring layer L <b> 21 (lower left part of the drawing) is connected to the voltage regulator 60. The planar view position of the large electrode pad 211 is the same as the planar view position of the external connection pad 416 (see FIG. 10).

電圧レギュレータ60に接続される電力供給パッド211b及び接地パッド211cが並んでいる接続領域R216(第1の領域)は、長方形形状の領域であり、その長辺は、半導体素子70に接続される各電極パッド211が並んでいる接続領域R217(第2の領域)と離隔して対向する。ここでは、接続領域R216の長辺は、接続領域R217の対向する辺の長さより若干短いが、これに限られない。接続領域R216及び接続領域R217の形状やサイズは、電圧レギュレータ60及び半導体素子70のサイズやその接続端子数などの関係に応じて定められればよい。   A connection region R216 (first region) in which the power supply pad 211b and the ground pad 211c connected to the voltage regulator 60 are arranged is a rectangular region, and the long side thereof is connected to the semiconductor element 70. It faces away from the connection region R217 (second region) where the electrode pads 211 are arranged. Here, the long side of the connection region R216 is slightly shorter than the length of the opposite side of the connection region R217, but is not limited thereto. The shapes and sizes of the connection region R216 and the connection region R217 may be determined according to the relationship between the size of the voltage regulator 60 and the semiconductor element 70, the number of connection terminals thereof, and the like.

半導体素子70への接続領域R217は、長方形形状又は正方形形状(矩形領域)である。接続領域R217では、信号伝送に用いられる配線(信号用の配線導体)に接続しているシグナルパッド211aが接続領域R216と対向しない辺に沿って複数列で並んでいる。接続領域R216と面する辺に沿った部分や接続領域R217の内側(接続領域R216と対向する辺に沿った方向について中心位置から所定範囲内)には、シグナルパッド211aが存在せず、電力供給パッド211b及び接地パッド211cのみが位置する(すなわち、シグナルパッド211aは、この所定範囲外に位置する)。所定範囲の大きさは、シグナルパッド211aの数などに応じて可能な限り大きく定めてもよい。   The connection region R217 to the semiconductor element 70 has a rectangular shape or a square shape (rectangular region). In the connection region R217, the signal pads 211a connected to the wiring (signal wiring conductor) used for signal transmission are arranged in a plurality of rows along the side not facing the connection region R216. The signal pad 211a does not exist in the portion along the side facing the connection region R216 or the inside of the connection region R217 (within a predetermined range from the center position in the direction along the side facing the connection region R216). Only the pad 211b and the ground pad 211c are located (that is, the signal pad 211a is located outside this predetermined range). The size of the predetermined range may be set as large as possible according to the number of signal pads 211a.

シグナルパッド211a及び電力供給パッド211bが二次元格子の格子点上に位置し、接地パッド211cは、隣り合うシグナルパッド211a又は電力供給パッド211bの4点からなる方形の中心に位置している。全体としては、配線基板100の各辺に対して45度ずつ傾いた正方格子(二次元格子)の格子点上に電極パッド211が、例えば、シグナルパッド211a又は電力供給パッド211bと接地パッド211cとが交互に位置している。   The signal pad 211a and the power supply pad 211b are located on the lattice points of the two-dimensional lattice, and the ground pad 211c is located at the center of a square formed by the four points of the adjacent signal pad 211a or power supply pad 211b. As a whole, electrode pads 211 are arranged on lattice points of a square lattice (two-dimensional lattice) inclined by 45 degrees with respect to each side of the wiring board 100, for example, a signal pad 211a or a power supply pad 211b and a ground pad 211c. Are located alternately.

図4は、ビルドアップ層20の配線層L22の上述の一部(以下図10まで同様)及び当該配線層L22の一部の上方で絶縁層I21を貫通する貫通導体231の一部を上面側から重ねて見た平面図である。   4 shows the above-described part of the wiring layer L22 of the buildup layer 20 (the same applies to FIG. 10 below) and a part of the through conductor 231 penetrating the insulating layer I21 above the wiring layer L22. FIG.

絶縁層I21と絶縁層I22と(コア絶縁層I31の上側の複数の絶縁層同士)の間における配線層L22は、接地面242c及び電力供給面242bを有する。接地面242cは、ここでは、図4内での上(配線層L22の端側)半分程度であって平面視で接続領域R216を含まない範囲を占める。電力供給面242bは、図4内での下(当該上下方向について配線層L22の中央側)半分程度であって平面視で接続領域R216を含む範囲を占める。接地面242cは、展開領域R228内の貫通導体231により接地面241と接続されている。接地面242cは、接地されて接地電圧となる。電力供給面242bは、外部及び電圧レギュレータ60から供給される電力により上述の所定の動作電圧となる。   The wiring layer L22 between the insulating layer I21 and the insulating layer I22 (a plurality of insulating layers above the core insulating layer I31) has a ground plane 242c and a power supply plane 242b. Here, the ground plane 242c occupies a range that is about the upper half (the end side of the wiring layer L22) in FIG. 4 and does not include the connection region R216 in plan view. The power supply surface 242b occupies the lower half of FIG. 4 (the center side of the wiring layer L22 in the vertical direction) and includes the connection region R216 in plan view. The ground plane 242c is connected to the ground plane 241 by a through conductor 231 in the development region R228. The ground plane 242c is grounded and becomes a ground voltage. The power supply surface 242b becomes the above-described predetermined operating voltage by the power supplied from the outside and the voltage regulator 60.

シグナルパッド211aは、いずれも、当該シグナルパッド211aと平面視で同一の位置で絶縁層I21を貫通する貫通導体231により配線層L22と接続されている。配線層L22は、シグナルパッド211aに接続する貫通導体231の下端を接続領域R217の外部とつなぐ配線252を有する。配線252は、全て電力供給面242bの外側であり、電力供給面242bを避ける状態で位置している。配線252は、接地面242cとは絶縁部分で隔てられている。すなわち、配線252は、絶縁層I21、I22同士の間において、平面視で接続領域R216と展開領域R228との間にかけて、接続領域R216内及び接続領域R216と接続領域R217との間の領域R218(各領域の外枠を直線で結んだ範囲)を避けた状態で位置している(接続領域R216内及び領域R218内に位置しない)。   Each of the signal pads 211a is connected to the wiring layer L22 by a through conductor 231 that penetrates the insulating layer I21 at the same position as the signal pad 211a in plan view. The wiring layer L22 includes a wiring 252 that connects the lower end of the through conductor 231 connected to the signal pad 211a to the outside of the connection region R217. The wirings 252 are all outside the power supply surface 242b and are located in a state avoiding the power supply surface 242b. The wiring 252 is separated from the ground plane 242c by an insulating portion. That is, the wiring 252 is between the insulating layers I21 and I22 between the connection region R216 and the development region R228 in a plan view, and the region R218 (in the connection region R216 and between the connection region R216 and the connection region R217). It is located in a state avoiding the range in which the outer frame of each region is connected by a straight line (not located in the connection region R216 and the region R218).

また、配線252上の任意の点を挟んで両側に電力供給面242bが位置することはない。配線252の貫通導体231と接続する一端とは反対側の他端のうち一部は、所定の二次元格子の格子点上であって平面視でシグナルパッド416a(図10参照)と同一位置に位置し、他の一部は、接地面242c上端の展開領域R228内に位置している。この展開領域R228は、対応する(配線252が接続して両端となる)シグナルパッド211a、416aよりも配線基板100(すなわち、絶縁層I21、I22など)の外縁側に位置している。   Further, the power supply surface 242b is not positioned on either side of an arbitrary point on the wiring 252. A part of the other end of the wiring 252 opposite to the one connected to the through conductor 231 is on a lattice point of a predetermined two-dimensional lattice and is located at the same position as the signal pad 416a (see FIG. 10) in plan view. The other part is located in the development region R228 at the upper end of the ground contact surface 242c. The development region R228 is located on the outer edge side of the wiring substrate 100 (that is, the insulating layers I21, I22, etc.) with respect to the corresponding signal pads 211a, 416a (which are connected to the wiring 252 and become both ends).

接続領域R216内の電力供給パッド211b及び接地パッド211cは、それぞれ十字状(十字の先端4点及び交点)に並んだ5本ずつの貫通導体231に接続されている。これらの貫通導体231は、絶縁層I21を貫通して配線層L22に接続されている。接続領域R217の電極パッド211のうち、電力供給パッド211bは、いずれも平面視同一位置の貫通導体231により配線層L22に接続されている。接続領域R217の接地パッド211cは、そのうち一部が平面視同一位置の貫通導体231により配線層L22に接続されている。   The power supply pads 211b and the ground pads 211c in the connection region R216 are connected to five through conductors 231 arranged in a cross shape (four points at the tip of the cross and intersections), respectively. These through conductors 231 penetrate through the insulating layer I21 and are connected to the wiring layer L22. Of the electrode pads 211 in the connection region R217, all of the power supply pads 211b are connected to the wiring layer L22 by through conductors 231 at the same position in plan view. A part of the ground pad 211c in the connection region R217 is connected to the wiring layer L22 by a through conductor 231 at the same position in plan view.

接続領域R216及び接続領域R217の全ての電力供給パッド211bに接続する貫通導体231の下端は、電力供給面242bの内部にあって、当該電力供給面242bと電気的につながっている。すなわち、電力供給面242bは、電圧レギュレータ60に接続される接続領域R216の電力供給パッド211bと、半導体素子70に接続される接続領域R217の電力供給パッド211bとの接続経路に含まれる。この電力供給面242bは、電圧レギュレータ60からの所定電圧での電力供給に係る貫通導体232と、半導体素子70への電力供給に係る貫通導体232との間が、配線252によって遮られない形状(すなわち、配線252との位置関係)となっている。   The lower ends of the through conductors 231 connected to all the power supply pads 211b in the connection region R216 and the connection region R217 are inside the power supply surface 242b and are electrically connected to the power supply surface 242b. That is, the power supply surface 242 b is included in a connection path between the power supply pad 211 b in the connection region R 216 connected to the voltage regulator 60 and the power supply pad 211 b in the connection region R 217 connected to the semiconductor element 70. The power supply surface 242 b has a shape in which the wiring 252 does not block between the through conductor 232 related to power supply at a predetermined voltage from the voltage regulator 60 and the through conductor 232 related to power supply to the semiconductor element 70 ( That is, the positional relationship with the wiring 252 is established.

接地パッド211cに接続する貫通導体231のうち、接続領域R216内で一つの接地パッド211cに接続されている5つの貫通導体231は、配線層L22内で当該5つの貫通導体231の下端をつなぐ導体パターンであるランド262cと接続されている。接続領域R217の接地パッド211cに接続されている貫通導体231は、それぞれ、配線層L22内で孤立した接地部分に接続している。平面視で接続領域R217の内部の接地パッド211cのうち、平面視で電力供給パッド416b(図10参照)に対応する位置のものには、貫通導体231が接続されていない。接地面242c内に並んでいる貫通導体231は、それぞれ当該接地面242cと配線層L21の接地面241とを接続している。   Of the through conductors 231 connected to the ground pad 211c, the five through conductors 231 connected to one ground pad 211c in the connection region R216 are conductors connecting the lower ends of the five through conductors 231 in the wiring layer L22. It is connected to a land 262c which is a pattern. The through conductors 231 connected to the ground pad 211c in the connection region R217 are connected to isolated ground portions in the wiring layer L22. The through conductor 231 is not connected to the ground pad 211c inside the connection region R217 in a plan view at a position corresponding to the power supply pad 416b (see FIG. 10) in the plan view. The through conductors 231 arranged in the ground plane 242c connect the ground plane 242c and the ground plane 241 of the wiring layer L21, respectively.

図5は、ビルドアップ層20の配線層L23の一部及び当該配線層L23の一部の上方で絶縁層I22を貫通する貫通導体232を上面側から重ねて見た平面図である。   FIG. 5 is a plan view of a part of the wiring layer L23 of the buildup layer 20 and a through conductor 232 penetrating the insulating layer I22 above the part of the wiring layer L23 as viewed from above.

配線層L23は、接地面243を有する。配線層L22における配線252の他端直下に位置し、当該配線252と接続された貫通導体232は、平面視同一位置で絶縁層I23を貫通する貫通導体233に接続される。貫通導体232及び貫通導体233による信号経路のうち、接地面243の直近を通過しないほうがよいもの、例えば、差動信号に係る2本1組の信号経路などについては、配線層L23において適宜な間隔でまとめて絶縁部分で取り囲む形状、位置関係とすることができる。   The wiring layer L23 has a ground plane 243. The through conductor 232 located immediately below the other end of the wiring 252 in the wiring layer L22 and connected to the wiring 252 is connected to the through conductor 233 that penetrates the insulating layer I23 at the same position in plan view. Of the signal paths formed by the through conductor 232 and the through conductor 233, those that should not pass through the immediate vicinity of the ground plane 243, for example, a set of two signal paths related to differential signals, are appropriately spaced in the wiring layer L23. The shape and positional relationship can be collectively surrounded by the insulating portion.

電力供給面242bの下面側において、平面視で各電力供給パッド416bと同一位置範囲では、それぞれ、十字状の位置関係(十字の4つの先端及び交点)の5つの貫通導体232が絶縁層I22を貫通している。同一の電力供給パッド416bにつながる5つの貫通導体は、配線層L22におけるランド262cと同様に、配線層L23において同一のランド263bに接続されている。   On the lower surface side of the power supply surface 242b, in the same position range as each power supply pad 416b in a plan view, the five through conductors 232 having a cross-like positional relationship (four tips and intersections of the cross) respectively pass through the insulating layer I22. It penetrates. The five through conductors connected to the same power supply pad 416b are connected to the same land 263b in the wiring layer L23, similarly to the land 262c in the wiring layer L22.

電力供給面242bに囲まれた内側につながる貫通導体232のうち、接地面241につながっているものの平面視同一位置では貫通導体232が絶縁層I22を貫通して、それぞれ下端が接地面243に接続されている。接地面242cの内部で接地パッド416cの平面視位置と同一位置のうち、配線252及びその周囲の絶縁部分と重ならない部分では、それぞれ、十字状に並んだ5つ又はその一部の貫通導体232が絶縁層I22を貫通して、接地面243に接続されている。また、平面視で外部接続パッド416が位置している範囲の外側、接地面243の周縁部及び展開領域R228における信号経路の間でも、平面視で貫通導体231と同一位置で当該貫通導体231とつながって接地面242cと接地面243とを接続する貫通導体232が絶縁層I22を貫通している。   Of the through conductors 232 connected to the inner side surrounded by the power supply surface 242b, the through conductors 232 pass through the insulating layer I22 at the same position in plan view but connected to the ground surface 241 and the lower ends thereof are connected to the ground surface 243, respectively. Has been. Of the same position as the planar view position of the grounding pad 416c inside the grounding surface 242c, at portions that do not overlap with the wiring 252 and surrounding insulating portions, five or a part of through conductors 232 arranged in a cross shape are respectively provided. Passes through the insulating layer I22 and is connected to the ground plane 243. In addition, the outside conductor pad 416 is located outside the range where the external connection pad 416 is located in plan view, between the peripheral portion of the ground plane 243 and the signal path in the development region R228. A through conductor 232 connected to connect the ground plane 242c and the ground plane 243 passes through the insulating layer I22.

図6は、コア基板30上面の上側導体層L31の一部及び当該上側導体層L31の一部の上方で絶縁層I23を貫通する貫通導体233の一部を上面側から重ねて見た平面図である。また、図7は、コア基板30下面の下側導体層L32の一部及び当該下側導体層L32の上方でコア絶縁層I31を貫通するコア貫通導体331の一部を上面側から重ねて見た平面図である。   FIG. 6 is a plan view in which a part of the upper conductor layer L31 on the upper surface of the core substrate 30 and a part of the through conductor 233 penetrating the insulating layer I23 above the part of the upper conductor layer L31 are viewed from the upper surface side. It is. 7 shows a part of the lower conductor layer L32 on the lower surface of the core substrate 30 and a part of the core through conductor 331 penetrating the core insulating layer I31 above the lower conductor layer L32 from the upper surface side. FIG.

上側導体層L31は、電力供給面341b及び接地面341cを有する。電力供給面341bは、平面視で電力供給面242bの範囲に対してシグナルパッド211aが位置する範囲を加えた範囲に広がっている。接地面341cは、上側導体層L31において電力供給面341b以外の部分のうち、当該電力供給面341bとの境界をなす絶縁部分を除いた範囲であり、平面視で接地面242cの範囲に配線252が位置する範囲を加えた範囲におおむね対応する。   The upper conductor layer L31 has a power supply surface 341b and a ground surface 341c. The power supply surface 341b extends in a range obtained by adding a range where the signal pad 211a is located to the range of the power supply surface 242b in plan view. The ground plane 341c is a range in the upper conductor layer L31 other than the power supply plane 341b except for an insulating portion that forms a boundary with the power supply plane 341b. Generally corresponds to the range including the range where is located.

電力供給及び信号経路に係る貫通導体233は、平面視で貫通導体232と同一の位置で絶縁層I23を貫通し、配線層L23と上側導体層L31とを接続している。接地に係る貫通導体233は、接地パッド416cと平面視同一位置にそれぞれ十字状に5つずつが並び、電力供給面341bに囲まれた内側では、当該5つの貫通導体233の下端が共通のランド361cにそれぞれ接続されている。また、平面視で展開領域R228の内部及び接地面341cの周縁部には、それぞれ1つずつ独立に接地に係る貫通導体233が並んでいる。   The through conductor 233 related to the power supply and signal path penetrates the insulating layer I23 at the same position as the through conductor 232 in plan view, and connects the wiring layer L23 and the upper conductor layer L31. The through conductors 233 for grounding are arranged in a cross shape at the same position as the ground pad 416c in a plan view, and on the inner side surrounded by the power supply surface 341b, the lower ends of the five through conductors 233 have a common land. 361c, respectively. Further, through conductors 233 for grounding are arranged one by one in the deployment region R228 and in the peripheral portion of the grounding surface 341c in plan view.

下側導体層L32は、接地面342を有する。電力供給及び接地に係るコア貫通導体331は、十字状に並んだ5つの貫通導体233に対して共通の1つが上側導体層L31と下側導体層L32とを接続している。下側導体層L32では、電力供給に係るコア貫通導体331は、ランド362bに接続されている。信号経路に係る貫通導体233など、1本ずつ独立しているものについては、平面視同一位置でコア絶縁層I31を貫通するコア貫通導体331により、それぞれ上側導体層L31と下側導体層L32とが接続されている。   The lower conductor layer L32 has a ground plane 342. The core through conductor 331 relating to power supply and grounding has a common one connecting the upper conductor layer L31 and the lower conductor layer L32 to the five through conductors 233 arranged in a cross shape. In the lower conductor layer L32, the core through conductor 331 related to power supply is connected to the land 362b. For each of the through conductors 233 related to the signal path, which are independent one by one, the upper conductor layer L31 and the lower conductor layer L32 are respectively separated by the core through conductor 331 penetrating the core insulating layer I31 at the same position in plan view. Is connected.

図8は、配線層L44の一部及び当該配線層L44の上方で絶縁層I44を貫通する貫通導体434を上面側から重ねて見た平面図である。   FIG. 8 is a plan view of a part of the wiring layer L44 and a through conductor 434 penetrating the insulating layer I44 above the wiring layer L44 as viewed from the upper surface side.

コア絶縁層I31の下側の絶縁層I44、I45同士の間における配線層L44は、電力供給面444b、接地面444c及び配線454を有する。配線454は、配線252により平面視で展開領域R228に引き出されていた信号経路をシグナルパッド416aの平面視位置に戻すために展開領域R228とシグナルパッド416aの配置領域との間にかけて位置する配線であり、信号経路に係るコア貫通導体331に接続されて、さらに絶縁層I44を貫通する貫通導体434に接続されている。配線454により戻されるシグナルパッド416aの平面視位置は、多数の配線252により配線層L22で直接シグナルパッド211aの平面視位置から引き出すことが困難なものである。この配線454は、平面視で接続領域R216内及び接続領域R216と接続領域R217との間の領域R218には位置しない。その他の信号経路に係る貫通導体434の平面視位置は、シグナルパッド416a及びコア貫通導体331の平面視位置と同一である。   The wiring layer L44 between the insulating layers I44 and I45 on the lower side of the core insulating layer I31 includes a power supply surface 444b, a ground surface 444c, and a wiring 454. The wiring 454 is a wiring located between the development region R228 and the arrangement region of the signal pad 416a in order to return the signal path drawn to the development region R228 in plan view by the wiring 252 to the planar view position of the signal pad 416a. Yes, connected to the core through conductor 331 related to the signal path, and further connected to the through conductor 434 penetrating the insulating layer I44. The planar view position of the signal pad 416a returned by the wiring 454 is difficult to be pulled out from the planar view position of the signal pad 211a directly by the wiring layer L22 by the numerous wirings 252. The wiring 454 is not located in the connection region R216 in the plan view and in the region R218 between the connection region R216 and the connection region R217. The planar view positions of the through conductors 434 related to other signal paths are the same as the planar view positions of the signal pad 416a and the core through conductor 331.

接地に係る貫通導体434は、接地に係る貫通導体233の大部分と平面視同一位置である。すなわち、十字状の位置関係の5つの貫通導体233と、当該貫通導体233と平面視同一位置の5つの貫通導体434とは、それぞれ、上側導体層L31及び下側導体層L32で共通のコア貫通導体331に接続されている。配線層L44の電力供給面444b内に接続される接地に係る貫通導体434は、5つずつ共通のランド464cで接続されている。   The through conductor 434 related to the ground is in the same position as the plan view of the majority of the through conductor 233 related to the ground. That is, the five penetrating conductors 233 having a cross-like positional relationship and the five penetrating conductors 434 at the same position in plan view as the penetrating conductor 233 are respectively connected to the common core through the upper conductor layer L31 and the lower conductor layer L32. The conductor 331 is connected. The grounding through conductors 434 connected to the power supply surface 444b of the wiring layer L44 are connected by five common lands 464c.

電力供給に係る貫通導体434の平面視位置の大部分は、電力供給に係る貫通導体233と平面視位置と同一である。絶縁層I23において、電力供給に係る貫通導体233は、平面視位置でシグナルパッド211aが並んでいる範囲内には存在しない。したがって、絶縁層I44には、電力供給に係る貫通導体233の平面視位置に対し、当該シグナルパッド211aが並んでいる範囲内の電力供給に係るコア貫通導体331の平面視位置をそれぞれ中心として十字状の位置関係にある5つずつの貫通導体434が追加される。   Most of the planar view position of the through conductor 434 related to power supply is the same as the planar view position of the through conductor 233 related to power supply. In the insulating layer I23, the through conductor 233 for supplying power does not exist in the range where the signal pads 211a are arranged in a plan view position. Therefore, the insulating layer I44 is cross-shaped with the planar view position of the core through conductor 331 related to the power supply within the range where the signal pads 211a are arranged in the center with respect to the planar view position of the through conductor 233 related to the power supply. Five through conductors 434 that are in a positional relationship are added.

図9は、配線層L45の一部及び当該配線層L45の上方で絶縁層I45を貫通する貫通導体435を上面側から重ねて見た平面図である。   FIG. 9 is a plan view of a part of the wiring layer L45 and the through conductor 435 penetrating the insulating layer I45 above the wiring layer L45 as viewed from the upper surface side.

配線層L45は、接地面445を有する。貫通導体435は、貫通導体434と平面視同一位置で絶縁層I45を貫通する。配線層L45は、シグナルに係る貫通導体のうち、上述の差動信号に係る各組の貫通導体の平面視位置をシグナルパッド416aの平面視位置にあわせるための配線455を有する。配線層L45の接地面445内に接続される電力供給に係る貫通導体435は、5つずつランド465bに接続されている。   The wiring layer L45 has a ground plane 445. The through conductor 435 penetrates the insulating layer I45 at the same position as the through conductor 434 in plan view. The wiring layer L45 includes a wiring 455 for adjusting the planar view position of each set of through conductors related to the differential signal among the through conductors related to the signal to the planar view position of the signal pad 416a. The through conductors 435 relating to the power supply connected in the ground plane 445 of the wiring layer L45 are connected to the land 465b by five.

図10は、配線層L46の一部及び当該配線層L46の上方で絶縁層I46を貫通する貫通導体436を上面側から重ねて見た平面図である。   FIG. 10 is a plan view of a part of the wiring layer L46 and a penetrating conductor 436 penetrating the insulating layer I46 above the wiring layer L46 as viewed from the upper surface side.

配線層L46は、電力供給面446b及び接地面446cを有する。配線層L46の下面、すなわち、配線基板100の底面側には、正方格子状の二次元配列の格子点上に外部接続パッド416が位置している。絶縁層I46を貫通する貫通導体436のうち信号経路に係る貫通導体436は、平面視で各外部接続パッド416の中心に位置する。電力供給及び接地に係る貫通導体436は、平面視で各外部接続パッド416の中心を中心とした十字状の位置関係で5つずつが並んでいる。上述のように、これらの位置範囲は、ソルダーレジスト層50の開口位置とそれぞれ一致する。   The wiring layer L46 has a power supply surface 446b and a ground surface 446c. On the lower surface of the wiring layer L 46, that is, on the bottom surface side of the wiring substrate 100, the external connection pads 416 are located on the lattice points of a square lattice-like two-dimensional array. The through conductor 436 related to the signal path among the through conductors 436 penetrating the insulating layer I46 is located at the center of each external connection pad 416 in plan view. Five through conductors 436 related to power supply and grounding are arranged in a cross-like positional relationship around the center of each external connection pad 416 in plan view. As described above, these position ranges coincide with the opening positions of the solder resist layer 50, respectively.

上述のように、配線基板100では、ビルドアップ層20の上面からビルドアップ層40の下面までの全ての範囲において、平面視で接続領域R216の内部及び接続領域R216と接続領域R217との間の領域R218には、信号伝送に係る信号用の配線導体、すなわち、配線や貫通導体がない(配線や貫通導体が接続領域R216及び領域R218を避ける状態で位置する)構造となっている。   As described above, in the wiring substrate 100, in the entire range from the upper surface of the buildup layer 20 to the lower surface of the buildup layer 40, the inside of the connection region R216 and between the connection region R216 and the connection region R217 in plan view. In the region R218, there is no wiring conductor for signals related to signal transmission, that is, there is no wiring or through conductor (the wiring and the through conductor are located in a state avoiding the connection region R216 and the region R218).

以上のように、本実施形態の配線基板100は、コア絶縁層I31と、当該コア絶縁層I31の上側及び下側に積層された状態で位置する複数の絶縁層I21〜I23、I44〜I46と、コア絶縁層I31よりも上側の絶縁層における最上面に位置する電極パッド211と、コア絶縁層I31よりも下側の絶縁層における最下面に位置する外部接続パッド416と、接地用、電力用及び信号用の配線導体と、電極パッド211のうち、接地用の配線導体に接続している複数の接地パッド211cの一部及び電力供給用の配線導体に接続している複数の電力供給パッド211bの一部に接続している電圧レギュレータ60と、を備える。   As described above, the wiring substrate 100 according to the present embodiment includes the core insulating layer I31 and the plurality of insulating layers I21 to I23 and I44 to I46 that are positioned in a stacked state on the upper and lower sides of the core insulating layer I31. The electrode pad 211 located on the top surface of the insulating layer above the core insulating layer I31, the external connection pad 416 located on the bottom surface of the insulating layer below the core insulating layer I31, and for grounding and power Among the electrode pads 211, a part of the plurality of ground pads 211c connected to the ground wiring conductor and the plurality of power supply pads 211b connected to the power supply wiring conductor. And a voltage regulator 60 connected to a part of the voltage regulator 60.

電圧レギュレータ60と接続している接地パッド211c及び電力供給パッド211bは、接続領域R216に位置し、接続領域R216外の電極パッド211は、接続領域R216と離隔した接続領域R217に位置する。   The ground pad 211c and the power supply pad 211b connected to the voltage regulator 60 are located in the connection region R216, and the electrode pad 211 outside the connection region R216 is located in the connection region R217 separated from the connection region R216.

配線導体のうち電極パッド211と外部接続パッド416との間の信号伝送に係る信号用の配線導体は、平面視で、接続領域R216、及び当該接続領域R216と接続領域R217との間の領域R218を避ける状態で位置している。   Among the wiring conductors, a signal wiring conductor related to signal transmission between the electrode pad 211 and the external connection pad 416 is a connection region R216 and a region R218 between the connection region R216 and the connection region R217 in plan view. Is located in a state to avoid.

信号用の配線導体のうち一部は、コア絶縁層I31よりも上側の前記複数の絶縁層I21、I22同士の間において、平面視で信号用の配線導体が接続する電極パッド211及び外部接続パッド416の各位置よりも複数の絶縁層I21の外縁側に位置する展開領域R228と接続領域R217との間にかけて位置しており、コア絶縁層I31よりも下側の複数の絶縁層I44、I45同士の間において、平面視で展開領域R228と外部接続パッド416(シグナルパッド416a)の配置領域との間にかけて位置している。   Some of the signal wiring conductors are electrode pads 211 and external connection pads that are connected to the signal wiring conductors in plan view between the plurality of insulating layers I21 and I22 above the core insulating layer I31. The plurality of insulating layers I <b> 44 and I <b> 45 located between the development region R <b> 228 and the connection region R <b> 217 located on the outer edge side of the plurality of insulating layers I <b> 21 from the respective positions of 416 and below the core insulating layer I <b> 31. Between the expansion region R228 and the region where the external connection pad 416 (signal pad 416a) is disposed in plan view.

これらのように、電圧レギュレータ60と半導体素子70との間での電力供給経路に含まれる電力供給面242bなどにおいて、貫通導体232間での電流を妨げないように配線252が位置しているので、配線基板100では、インピーダンスなど電力供給に係る負荷を上昇させずに電圧低下を抑制することができる。また、これに伴い、配線基板100は、平面視でシグナルパッド211aの位置から一度絶縁層の外縁付近に引き出す配線と、当該外縁付近から平面視でシグナルパッド416aの位置へ戻す配線とを有することで、シグナルパッド211a、416a間を無理なくつなぐ信号経路を得ることができ、配線の微細化や複雑化などに伴うコストや手間の上昇を抑えることができる。これらにより、配線基板100では、より効果的に安定して十分な電力を半導体素子70に対して供給することができる。   As described above, the wiring 252 is positioned so as not to disturb the current between the through conductors 232 on the power supply surface 242b included in the power supply path between the voltage regulator 60 and the semiconductor element 70. In the wiring board 100, voltage drop can be suppressed without increasing the load related to power supply such as impedance. Accordingly, the wiring board 100 has wiring that is once drawn from the position of the signal pad 211a to the vicinity of the outer edge of the insulating layer in plan view and wiring that returns from the vicinity of the outer edge to the position of the signal pad 416a in plan view. Thus, a signal path that connects the signal pads 211a and 416a without difficulty can be obtained, and an increase in cost and labor associated with miniaturization and complexity of wiring can be suppressed. Accordingly, the wiring board 100 can supply sufficient power to the semiconductor element 70 stably and more effectively.

また、配線基板100は、平面視で接続領域R217と展開領域R228との間にかけて配線252が位置する絶縁層I22の表面に、接続領域R216の電力供給パッド211bと接続領域R217の電力供給パッド211bとの接続経路に含まれる電力供給面242bを有する。配線252は、この電力供給面242bを避ける状態で位置している。
すなわち、電力供給面242bに孤立した部分や細く入り組んだ部分などがないので、電力供給経路の電気伝導度を安定して向上させることができる。
Further, the wiring substrate 100 has a power supply pad 211b of the connection region R216 and a power supply pad 211b of the connection region R217 on the surface of the insulating layer I22 where the wiring 252 is located between the connection region R217 and the development region R228 in plan view. And a power supply surface 242b included in the connection path. The wiring 252 is positioned so as to avoid the power supply surface 242b.
That is, since there is no isolated part or narrowly intricate part on the power supply surface 242b, the electrical conductivity of the power supply path can be stably improved.

また、接続領域R217は長方形形状(矩形領域)であり、接続領域R217の電極パッド211は、正方格子の格子点上に各々位置している。シグナルパッド211aは、接続領域R217における接続領域R216に対向する辺に沿った方向(図3の上下方向)について中心位置から所定範囲内に位置しない。   In addition, the connection region R217 has a rectangular shape (rectangular region), and the electrode pads 211 of the connection region R217 are respectively located on lattice points of a square lattice. The signal pad 211a is not located within a predetermined range from the center position in the direction along the side of the connection region R217 that faces the connection region R216 (the vertical direction in FIG. 3).

このようなシグナルパッド211aの並びにより、接続領域R217からより効率よく配線252を平面視シグナルパッド416aの配置領域や展開領域R228、すなわち、接続領域R216や、接続領域R216と接続領域R217との間の領域R218と重ならない方向(図3の上下方向)へ引き出すことができる。また、接続領域R217の内部でも配線252が電力供給面242b内の電力供給経路を横切る長さが短くなり、より効果的に安定した十分な電力供給を行うことができる。   Due to the arrangement of the signal pads 211a, the wiring 252 is more efficiently connected from the connection region R217 to the arrangement region and the development region R228 of the planar view signal pad 416a, that is, the connection region R216 or between the connection region R216 and the connection region R217. Can be pulled out in a direction that does not overlap the region R218 (vertical direction in FIG. 3). In addition, the length of the wiring 252 that crosses the power supply path in the power supply surface 242b is shortened also inside the connection region R217, and stable and sufficient power supply can be performed more effectively.

また、本実施形態の電子装置2は、上述の配線基板100と、接続領域R217に位置する電極パッド211に接続される電子部品(半導体素子70)と、を備える。このような電子装置2では、半導体素子70の消費電力の増大や変動に応じて安定して十分な電力供給を行い、半導体素子70の安定動作を維持することができる。   In addition, the electronic device 2 of the present embodiment includes the above-described wiring board 100 and an electronic component (semiconductor element 70) connected to the electrode pad 211 located in the connection region R217. In such an electronic device 2, it is possible to stably supply sufficient power in accordance with an increase or fluctuation in power consumption of the semiconductor element 70, and to maintain a stable operation of the semiconductor element 70.

なお、本開示に係る上記実施の形態は、様々な変更が可能である。
例えば、上記実施の形態では、配線基板100の最上面の左右対称の位置に2個の電圧レギュレータ60が位置する場合を例に挙げて説明したが、必要な供給電力、配線基板のサイズや信号伝送経路の数などに応じて、電圧レギュレータ60の数(例えば、1個や4個など)や位置(例えば、対角付近)が異なっていてもよい。
Various modifications can be made to the above-described embodiment according to the present disclosure.
For example, in the above-described embodiment, the case where the two voltage regulators 60 are positioned at symmetrical positions on the uppermost surface of the wiring board 100 has been described as an example. However, the necessary supply power, the size of the wiring board, and the signal Depending on the number of transmission paths and the like, the number (for example, one or four) of voltage regulators 60 and the position (for example, near the diagonal) may be different.

また、接続領域R216、R217の形状や内部の電極パッド211の数や並びは、電圧レギュレータ60及び半導体素子70によって決まり、上記実施形態で示したものに限られない。   Further, the shapes of the connection regions R216 and R217 and the number and arrangement of the internal electrode pads 211 are determined by the voltage regulator 60 and the semiconductor element 70, and are not limited to those shown in the above embodiment.

また、上記実施の形態では、配線層L22の配線252及び配線層L44の配線454を介して信号伝送に係る電極パッド211と外部接続パッド416とを接続したが、パッド数が多い場合などには、ビルドアップ層20、40のそれぞれ複数の配線層の配線により接続されてもよい。   In the above embodiment, the electrode pad 211 and the external connection pad 416 related to signal transmission are connected via the wiring 252 of the wiring layer L22 and the wiring 454 of the wiring layer L44. However, when the number of pads is large, etc. The buildup layers 20 and 40 may be connected by wiring of a plurality of wiring layers.

また、各配線層L21〜L23、L44〜L46、上側導体層L31、下側導体層L32が有する接地面及び電力供給面の位置関係は、上記実施形態のものに限られない。   Further, the positional relationship between the ground plane and the power supply plane of each of the wiring layers L21 to L23, L44 to L46, the upper conductor layer L31, and the lower conductor layer L32 is not limited to that of the above embodiment.

その他、上記実施の形態で示した構成、構造、並びや位置関係などの具体的な細部は、本開示の趣旨を逸脱しない範囲で適宜変更可能である。   In addition, specific details such as the configuration, structure, arrangement, and positional relationship described in the above embodiments can be changed as appropriate without departing from the spirit of the present disclosure.

1 電子モジュール
2 電子装置
10 ソルダーレジスト層
20 ビルドアップ層
211 電極パッド
211a シグナルパッド
211b 電力供給パッド
211c 接地パッド
231〜233 貫通導体
241、242c、243 接地面
242b 電力供給面
252 配線
262c、263b ランド
30 コア基板
320 スルーホール
331 コア貫通導体
341b 電力供給面
341c、342 接地面
361c、362b ランド
40 ビルドアップ層
416 外部接続パッド
416a シグナルパッド
416b 電力供給パッド
416c 接地パッド
434〜436 貫通導体
444b 電力供給面
444c、445、446c 接地面
446b 電力供給面
454、455 配線
464c、465b ランド
50 ソルダーレジスト層
60 電圧レギュレータ
61 接続導体
70 半導体素子
71 接続導体
100 配線基板
200 モジュール基板
I21〜I23 絶縁層
I31 コア絶縁層
I44〜I46 絶縁層
L21〜L23 配線層
L31 上側導体層
L32 下側導体層
L44〜L46 配線層
R216、R217 接続領域
R218 領域
R228 展開領域
RUL 一部領域
DESCRIPTION OF SYMBOLS 1 Electronic module 2 Electronic device 10 Solder resist layer 20 Buildup layer 211 Electrode pad 211a Signal pad 211b Power supply pad 211c Grounding pads 231 to 233 Through conductors 241, 242c, 243 Grounding surface 242b Power supply surface 252 Wiring 262c, 263b Land 30 Core substrate 320 Through hole 331 Core through conductor 341b Power supply surface 341c, 342 Ground surface 361c, 362b Land 40 Build-up layer 416 External connection pad 416a Signal pad 416b Power supply pad 416c Ground pads 434-436 Through conductor 444b Power supply surface 444c 445, 446c Ground plane 446b Power supply plane 454, 455 Wiring 464c, 465b Land 50 Solder resist layer 60 Voltage regulator 61 Connection conductor 70 Semiconductor element 71 Connecting conductor 100 Wiring board 200 Module board I21-I23 Insulating layer I31 Core insulating layers I44-I46 Insulating layers L21-L23 Wiring layer L31 Upper conductor layer L32 Lower conductor layers L44-L46 Wiring layers R216, R217 Connection area R218 region R228 expanded region RUL partial region

Claims (4)

コア絶縁層と、
当該コア絶縁層の上側及び下側に積層された状態で位置する複数の絶縁層と、
前記上側の絶縁層における最上面に位置する第1の接続端子と、
前記下側の絶縁層における最下面に位置する第2の接続端子と、
接地用、電力用及び信号用の配線導体と、
前記第1の接続端子のうち、前記接地用の配線導体に接続している複数の接地端子の一部、及び前記電力用の配線導体に接続している複数の電力供給端子の一部に接続している電圧レギュレータと、
を備え、
前記電圧レギュレータと接続している前記接地端子及び前記電力供給端子は、第1の領域に位置し、
前記第1の領域外の前記第1の接続端子は、前記第1の領域と離隔した第2の領域に位置し、
前記第1の接続端子と前記第2の接続端子との間の信号伝送に係る前記信号用の配線導体は、平面視で、前記第1の領域、及び当該第1の領域と前記第2の領域との間の領域を避ける状態で位置しており、
前記信号用の配線導体の一部は、前記上側の絶縁層同士の間において、平面視で前記信号用の配線導体が接続する前記第1の接続端子及び前記第2の接続端子の各位置よりも前記絶縁層の外縁側に位置する展開領域と前記第2の領域との間にかけて位置しており、前記下側の前記絶縁層同士の間において、平面視で前記展開領域と前記第2の接続端子の配置領域との間にかけて位置している
ことを特徴とする配線基板。
A core insulation layer;
A plurality of insulating layers positioned in a state of being laminated on the upper side and the lower side of the core insulating layer;
A first connection terminal located on the uppermost surface of the upper insulating layer;
A second connection terminal located on the lowermost surface of the lower insulating layer;
Wiring conductors for grounding, power and signals;
Of the first connection terminals, connected to a part of the plurality of ground terminals connected to the ground wiring conductor and a part of the plurality of power supply terminals connected to the power wiring conductor A voltage regulator that
With
The ground terminal and the power supply terminal connected to the voltage regulator are located in a first region,
The first connection terminal outside the first region is located in a second region separated from the first region,
The signal wiring conductor related to signal transmission between the first connection terminal and the second connection terminal includes the first region, the first region, and the second region in plan view. Located in a state avoiding the area between the areas,
Part of the signal wiring conductor is located between the upper insulating layers from the positions of the first connection terminal and the second connection terminal to which the signal wiring conductor is connected in a plan view. Is also located between the development region located on the outer edge side of the insulating layer and the second region, and between the lower insulation layers, the development region and the second region in plan view. A wiring board characterized in that the wiring board is located between the connection terminal area and the area.
平面視で前記第2の領域と前記展開領域とにかけて前記信号用の配線導体が位置する前記絶縁層の表面に、前記第1の領域の前記電力供給端子と前記第2の領域の前記電力供給端子との接続経路に含まれる電力供給面を有し、
前記信号用の配線導体は、前記電力供給面を避ける状態で位置している
ことを特徴とする請求項1記載の配線基板。
The power supply terminal of the first region and the power supply of the second region are formed on the surface of the insulating layer where the signal wiring conductor is located between the second region and the development region in plan view. A power supply surface included in the connection path with the terminal,
The wiring board according to claim 1, wherein the signal wiring conductor is positioned so as to avoid the power supply surface.
前記第2の領域は矩形領域であり、
当該第2の領域の前記第1の接続端子は、二次元格子の格子点上に各々位置し、
前記信号用の配線導体に接続している前記第1の接続端子は、前記第2の領域における前記第1の領域に対向する辺に沿った方向について中心位置から所定範囲内に位置しない
ことを特徴とする請求項1又は2記載の配線基板。
The second region is a rectangular region;
The first connection terminals of the second region are located on lattice points of a two-dimensional lattice,
The first connection terminal connected to the signal wiring conductor is not located within a predetermined range from a center position in a direction along a side facing the first region in the second region. The wiring board according to claim 1 or 2, characterized in that:
請求項1〜3のいずれか一項に記載の配線基板と、
前記第2の領域に位置する前記第1の接続端子に接続される電子部品と、
を備えることを特徴とする電子装置。
The wiring board according to any one of claims 1 to 3,
An electronic component connected to the first connection terminal located in the second region;
An electronic device comprising:
JP2018034558A 2018-02-28 2018-02-28 Wiring board and electronic apparatus Pending JP2019149508A (en)

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JP2015154062A (en) * 2014-02-19 2015-08-24 ルネサスエレクトロニクス株式会社 Electronic device
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080116589A1 (en) * 2006-11-17 2008-05-22 Zong-Fu Li Ball grid array package assembly with integrated voltage regulator
JP2009176922A (en) * 2008-01-24 2009-08-06 Hitachi Ltd Semiconductor device
JP2010206118A (en) * 2009-03-06 2010-09-16 Canon Inc Multilayer-type semiconductor device
WO2011074283A1 (en) * 2009-12-15 2011-06-23 日本特殊陶業株式会社 Capacitor-equipped wiring substrate and component-equipped wiring substrate
US20130003310A1 (en) * 2011-06-28 2013-01-03 Oracle International Corporation Chip package to support high-frequency processors
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