JP2019129165A - Joining device and joining method - Google Patents

Abstract

To solve the problem that even if substrates are joined with same alignment accuracy and then joined to each other, amounts of positional deviation caused between the joined substrates may vary.SOLUTION: A joining device comprises; a holding part for holding a first substrate; a joining part that joins at least a part of a second substrate to at least a part of the first substrate held by the holding part and then enlarges the joining area to join the first substrate to the second substrate; and a determining part that determines holding force of the holding part at the time of joining the first substrate to the second substrate, on the basis of at least either one of information about at least either one of the first substrate and the second substrate and an environmental condition of the joining part. In the joining device, the environmental condition may include a temperature, humidity, a kind of gas and an air pressure in an environment under which the first substrate and the second substrate are placed.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a bonding apparatus and a bonding method.

There is a bonding method in which the entire substrates are bonded by sequentially bonding two opposing substrates from a part (see, for example, Patent Document 1).
Patent Document 1: Japanese Patent Application Publication No. 2016-213491

  Even when two substrates are aligned with the same alignment accuracy, there is a problem that the amount of misalignment generated between the substrates after bonding varies among the substrate sets.

  In the first aspect of the present invention, after joining at least part of the second substrate to at least part of the first substrate held by the holding unit that holds the first substrate and the holding unit, the bonding region is formed. Based on at least one of the bonding portion that bonds the first substrate and the second substrate, information on at least one of the first substrate and the second substrate, and the environmental condition of the bonding portion, There is provided a bonding apparatus including a determination unit that determines a holding force of the holding unit when bonding the first substrate and the second substrate.

  In the second aspect of the present invention, the step of holding the first substrate on the holding portion, and joining at least a portion of the second substrate to at least a portion of the first substrate held on the holding portion, Expanding the region to bond the first substrate and the second substrate, information about the first substrate and the second at least one, and the environmental condition of the bonding portion, and the first substrate and And determining the holding power of the holder when bonding the second substrate.

  The above summary of the invention does not enumerate all of the features of the present invention. A subcombination of these feature groups can also be an invention.

FIG. 2 is a schematic view showing a configuration of a laminated substrate manufacturing apparatus 100. FIG. 2 is a schematic plan view of a substrate 210. FIG. 2 is a schematic cross-sectional view of a substrate holder 220 holding a substrate 210. 5 is a schematic cross-sectional view of a substrate holder 240 holding a substrate 230. FIG. It is a flowchart which shows the procedure which joins the board | substrate 210,230. FIG. 7 is a schematic cross-sectional view of a joint 300. FIG. 10 is a schematic cross-sectional view showing the operation of the bonding unit 300. It is a graph which shows the relation between suction power and joining magnification. It is a graph which shows the relation between suction power and joining magnification. FIG. 10 is a schematic cross-sectional view showing the operation of the bonding unit 300. FIG. 10 is a schematic cross-sectional view showing the operation of the bonding unit 300. It is a schematic diagram which shows the state of the board | substrates 210 and 230 in the junction part 300. FIG. FIG. 10 is a schematic cross-sectional view showing the operation of the bonding unit 300. FIG. 6 is a schematic cross-sectional view showing a bonding process of the substrates 210 and 230. FIG. 6 is a schematic cross-sectional view showing a bonding process of the substrates 210 and 230. FIG. 6 is a schematic cross-sectional view showing a bonding process of the substrates 210 and 230. It is a schematic cross section which shows the advancing process of a junction wave. It is a schematic cross section which shows the advancing process of a junction wave. It is a schematic cross section which shows the advancing process of a junction wave. It is a schematic cross section which shows the advancing process of a junction wave. It is a typical sectional view explaining the phenomenon which arises in the boundary of junction. It is a typical sectional view explaining the phenomenon which arises in the boundary of junction. 5 is a schematic cross-sectional view of a substrate holder 260. FIG. FIG. 14 is a schematic cross-sectional view showing a bonding process using the substrate holder 260. It is a typical sectional view explaining the phenomenon which arises in the boundary of junction. 7 is a flowchart showing another procedure of bonding the substrates 210 and 230. It is a figure which shows the structure of the other board | substrate holder 280 typically.

  Hereinafter, the present invention will be described through embodiments of the invention. The following embodiments do not limit the claimed invention. Not all combinations of features described in the embodiments are essential to the invention.

  FIG. 1 is a schematic plan view of the laminated substrate manufacturing apparatus 100. FIG. The multilayer substrate manufacturing apparatus 100 includes a housing 110, substrate cassettes 120 and 130 and a control unit 150 disposed outside the housing 110, a transport unit 140, a joint unit 300, and a holder disposed inside the housing 110. A stocker 400 and a pre-aligner 500 are provided.

  One substrate cassette 120 accommodates the substrates 210 to be bonded. The other substrate cassette 130 accommodates the laminated substrate 201 formed by bonding the substrates 210. The substrate cassettes 120 and 130 can be individually attached to and detached from the housing 110.

  The transport unit 140 transports the single substrate 210 and the substrate holder 220 inside the housing 110. Further, the transport unit 140 transports, within the housing 110, the substrate holder 220 holding the substrate 210 and the laminated substrate 201 formed by laminating the substrates 210.

  The control unit 150 individually controls the operation of each part of the multilayer substrate manufacturing apparatus 100 and controls the cooperation between the respective parts in an integrated manner. In addition, the control unit 150 includes an environment sensor 151 disposed at the bonding unit 300. The environment sensor 151 detects an ambient temperature, an atmospheric pressure, a type of gas, and an environmental condition, such as humidity, of the environment in which the substrate 210 is bonded in the bonding unit 300, and transmits the detected condition to the control unit 150. Thereby, the control part 150 performs control based on the environmental condition of the environment where the board | substrate 210 is joined.

  Further, the control unit 150 receives a user's instruction from the outside, and sets conditions for manufacturing the laminated substrate 201. Furthermore, the control unit 150 has a user interface that displays the operation state of the multilayer substrate manufacturing apparatus 100 toward the outside.

  Furthermore, the control unit 150 may acquire information on each of the loaded substrates 210 from the outside. The information acquired here may include information on manufacturing conditions such as the content and history of the process received before the substrate 210 is carried into the laminated substrate manufacturing apparatus 100. In addition, the information related to the substrate 210 may include, for example, information related to the deformation amount such as the thickness, surface property, and warpage of the substrate 210.

  The surface property of the substrate 210 means the state of the surface of the substrate 210 that affects the frictional force of the substrate 210 against the substrate holder 220. More specifically, the information on the surface quality may include information indicating the surface roughness of the substrate 210 itself. In addition, the information on the surface texture of the substrate 210 may include information on deposits attached to the surface of the substrate 210. Furthermore, the control unit 150 may cause the control unit 150 to acquire the number of times of use of the substrate holder 220 or the like as information used to estimate the amount of adhesion of the attached matter to the substrate holder 220.

  Further, the deformation of the substrate 210 means the type and degree of steric distortion generated in the substrate 210. The steric strain is a displacement in a direction other than the direction along the bonding surface of the substrate 210, that is, a direction crossing the bonding surface, and includes a curvature generated when the substrate 210 is bent entirely or partially. Here, “the substrate is bent” means that the point on the substrate 210 which is not present on the plane specified by the three points is changed to a shape that the surface of the substrate 210 includes.

  In addition, the curvature is a distortion in which the surface of the substrate 210 has a curved surface, and includes, for example, the curvature of the substrate 210. Here, the warp means the three-dimensional distortion remaining on the substrate 210 in a state where the influence of gravity is eliminated, and the three-dimensional distortion obtained by adding the influence of gravity to the warp is called deflection. The warp of the substrate 210 includes a global warp in which the entire substrate 210 is bent with a substantially uniform curvature, and a local warp in which a part of the curvature of the substrate 210 changes locally.

  The bonding portion 300 has a pair of stages facing each other, and after aligning the substrates 210 held by each of the stages with each other, bonding is performed by contact with each other to form a layered substrate 201.

  Inside the multilayer substrate manufacturing apparatus 100, the substrate 210 is handled while being held by the substrate holder 220. In the present embodiment, the substrate holder 220 serves as a holding unit that sucks and holds the substrate 210 by a vacuum chuck. By handling the substrate 210 integrally with the high strength substrate holder 220, damage to the thin and fragile substrate 210 can be prevented, and the operation of the layered substrate manufacturing apparatus 100 can be accelerated.

  The substrate holder 220 is formed of a hard material such as alumina ceramics, and has a holding portion having a width approximately the same as the area of the substrate 210 and an edge portion arranged outside the holding portion. A plurality of substrate holders 220 are accommodated in holder stocker 400 in laminated substrate manufacturing apparatus 100.

  When the substrate 210 or the laminated substrate 201 is unloaded from the laminated substrate manufacturing apparatus 100, the substrate holder 220 is separated from the substrate 210 or the laminated substrate 201 and returned to the holder stocker 400. Therefore, the substrate holder 220 remains inside without being carried out to the outside of the laminated substrate manufacturing apparatus 100, and is repeatedly used. Therefore, it can be said that the substrate holder 220 is a part of the laminated substrate manufacturing apparatus 100. Furthermore, the substrate holder 220 can be taken out of the multilayer substrate manufacturing apparatus 100 for the purpose of maintenance, replacement including cleaning, and the like.

  The pre-aligner 500 cooperates with the transport unit 140 to cause the substrate holder 220 to hold the substrate 210 loaded therein. In addition, the pre-aligner 500 is also used when separating the laminated substrate 201 carried out of the bonding section 300 from the substrate holder 220.

  Examples of the substrate 210 are a substrate on which elements, circuits, terminals and the like are formed, an unprocessed silicon wafer, a compound semiconductor wafer, and a glass substrate. The set of substrates 210 to be joined may be a circuit substrate and an unprocessed substrate, or may be unprocessed substrates. The substrate 210 to be bonded may itself be a laminated substrate 201 formed by laminating a plurality of substrates. In the present embodiment, the substrate 210 is a semiconductor wafer on which circuits and the like are formed.

  FIG. 2 is a schematic plan view of the substrates 210 bonded together. The substrate 210 has scribe lines 211, alignment marks 213, and circuit areas 214. A plurality of alignment marks 213 and circuit areas 214 are provided.

  The alignment mark 213 is an example of a structure formed on the surface of the substrate 210. In the illustrated example, the alignment mark 213 is disposed so as to overlap the scribe line 211 disposed between the circuit regions 214. The alignment mark 213 is used as an alignment index when bonding the substrate 210 to another substrate 210.

  A plurality of circuit regions 214 having the same structure are periodically arranged on the surface of the substrate 210. Each circuit region 214 is provided with a structure such as a semiconductor device, a wiring, or a protective film formed by a photolithography technique or the like. Connection portions such as pads and bumps which are connection terminals when the substrate 210 is electrically connected to another substrate 210 or a lead frame are also arranged in the circuit area 214. The connection portion is also an example of a structure formed on the surface of the substrate 210.

  FIG. 3 is a schematic cross-sectional view showing a state where the substrate 210 is held by the substrate holder 220. The substrate holder 220 has a main body 229 including an air passage 222 and a protrusion 251.

  The air passage 222 is formed inside the main body 229 and has a plurality of openings in the suction surface 221. The other end of the air passage 222 is coupled to an open end 125 provided outside the substrate holder 220 and a negative pressure source 126 via a control valve 124. The control valve 124 selectively brings the air passage 222 into communication with the open end 125 or the negative pressure source 126 under the control of the control unit 150.

  When the control valve 124 causes the air passage 222 to communicate with the negative pressure source 126, the substrate 210 mounted on the substrate holder 220 is adsorbed to the adsorption surface 221 by the suction force by the negative pressure acting on the opening on the adsorption surface 221 side. The Thus, the substrate holder 220 holds the substrate 210. When the control valve 124 connects the air passage 222 to the open end 125, the suction force of the suction surface 221 is not generated, and the suction is eliminated. Thus, the holding of the substrate 210 by the substrate holder 220 is released.

  The upper surface of the main body 229 in the drawing forms a generally flat suction surface 221. However, a protrusion 251 protruding upward in the figure from the suction surface 221 is disposed substantially at the center of the suction surface 221. The protrusion 251 has, for example, a cylindrical shape having a diameter C, and has a height A with respect to the suction surface 221. For this reason, when the substrate 210 is adsorbed to the adsorption surface 221, the tip of the protrusion 251 abuts on the lower surface of the substrate 210 in the figure, and a raised portion 215 having a height B is formed near the center of the substrate 210.

  The curvature of the raised portion 215 formed on a part of the substrate 210 by the protruding member 250 is not necessarily constant throughout the raised portion 215, and the raised portion 215 is at least partially raised on the substrate 210. It has a curvature larger than the area other than 215. When the area other than the raised portion 215 of the substrate 210 is flat, ie, the curvature of the area is zero, in the substrate 210 in which the raised portion 215 is formed by the protrusion 251, only the raised portion 215 of the flat substrate 210 is curved. It becomes the shape.

  FIG. 4 is a schematic cross-sectional view of a substrate holder 240 that holds another substrate 230 to be bonded to the substrate 210. The substrate holder 240 has a main body 249 in which a suction surface 241 and a ventilation path 242 are formed.

  A plurality of openings communicating with the air passage 242 are arranged on the suction surface 241 of the substrate holder 240 that is flat as a whole. One end of the air passage 242 is coupled to an open end 145 and a negative pressure source 146, 147, 148 provided outside the substrate holder 240 via a control valve 144. In addition, negative pressure adjustment may be performed using a single negative pressure source without using a plurality of negative pressure sources 146, 147, and 148 by using a static regulator or the like having a pressure adjustment function as the control valve 144. it can.

  The control valve 144 selectively communicates the ventilation path 242 with one of the open end 145 and the negative pressure sources 146, 147, and 148 under the control of the control unit 150. Here, the negative pressures provided by the plurality of negative pressure sources 146, 147, 148 are different from one another. Therefore, the suction force acting on the substrate 230 differs depending on which negative pressure source 146, 147, 148 the air passage 242 is in communication with the control unit 150. Thereby, the control unit 150 can change the magnitude of the holding force of the substrate 230 with respect to the substrate holder 240.

  FIG. 5 is a flow chart showing the procedure for bonding the substrate 210 to another substrate 230. The substrate 210 to be bonded is held by the substrate holder 220 in the pre-aligner 500 of the laminated substrate manufacturing apparatus 100. Also, the substrate 230 is held by the substrate holder 240. Accordingly, the substrates 210 and 230 are carried into the bonding unit 300 together with the substrate holders 220 and 240 (step S101).

  FIG. 6 is a schematic view showing the structure of the joint portion 300. As shown in FIG. FIG. 6 is also a view showing a state immediately after the substrates 210 and 230 are carried in at step S102.

  The joint unit 300 includes a frame 310, a fixed stage 321, and a moving stage 341. The frame 310 has a top plate 311 and a bottom plate 313, each of which is horizontal. The joint unit 300 is connected to the control unit 150 and operates under the control of the control unit 150.

  The fixed stage 321 is fixed to the top plate 311 of the frame 310 downward, and holds the substrate 210 by adsorbing the substrate holder 220 shown in FIG. 3. The substrate holder 220 held by the fixed stage 321 is carried into the bonding portion 300 so that the bonding surface of the substrate 210 faces downward in the figure, and is also held downward by the fixed stage 321.

  On the lower surface of the top plate 311 of the frame 310 in the figure, an upper microscope 322 and an upper activation device 323 fixed downward in the figure are arranged on the side of the fixed stage 321. The upper microscope 322 observes the upper surface of the substrate 230 on the moving stage 341 disposed to face the fixed stage 321. The upper activation device 323 generates, for example, a plasma to activate the upper surface of the substrate 230 held by the moving stage 341.

  In the joint portion 300, an X direction driving unit 331, a Y direction driving unit 332, and a moving stage 341 are stacked on the upper surface of the bottom plate 313 of the frame 310 in the drawing. The substrate holder 240 holding the substrate 230 is carried onto the upper surface of the moving stage 341 so that the surface of the substrate 230 faces upward.

  The X-direction drive unit 331 moves in the direction indicated by the arrow X in the drawing in parallel with the bottom plate 313. The Y-direction drive unit 332 moves on the X-direction drive unit 331 in parallel with the bottom plate 313 in the direction indicated by the arrow Y in the drawing. By combining the operations of the X-direction driving unit 331 and the Y-direction driving unit 332, the moving stage 341 can move two-dimensionally in parallel with the bottom plate 313.

  A Z-direction drive unit 333 is arranged between the Y-direction drive unit 332 and the moving stage 341. The Z-direction drive unit 333 moves the moving stage 341 relative to the Y-direction drive unit 332 in a direction perpendicular to the bottom plate 313 indicated by the arrow Z. Thereby, the movable stage 341 can be made to approach the fixed stage 321. The moving amount of the moving stage 341 by the X direction driving unit 331, the Y direction driving unit 332, and the Z direction driving unit 333 is measured with high accuracy using an interferometer or the like.

  A lower microscope 342 and a lower activation device 343 are mounted on the side of the moving stage 341 on the upper surface of the Y-direction drive unit 332 in the drawing. The lower microscope 342 moves together with the Y-direction drive unit 332 to observe the lower surface of the downward substrate 210 held by the fixed stage 321. The lower activation device 343 generates, for example, plasma that irradiates the substrate 210 while moving together with the Y-direction driving unit 332, and activates the lower surface of the substrate 210 held by the fixed stage 321 in the drawing.

  Here, the activation of the substrates 210 and 230 means that hydrogen bonding, van der Waals bonding, covalent bonding, and the like occur when the bonding surface of the substrate comes into contact with the bonding surface of another substrate and does not melt without melting. It means that the bonding surface of at least one of the substrates is treated so as to be in a phase bonded state.

  That is, activation includes facilitating bond formation by generating dangling bonds (unbonds) on the surfaces of the substrates 210 and 230. Specifically, in the upper activation device 323 and the lower activation device 343, for example, oxygen gas which is a processing gas is excited and plasmatized in a reduced pressure atmosphere, and surfaces where oxygen ions become respective bonding surfaces of two substrates Irradiate. For example, in the case where the substrate is a substrate having a SiO film formed on Si, the irradiation of oxygen ions breaks the bond of SiO on the substrate surface, which will be the bonding surface during lamination, resulting in dangling bonds of Si and O. It is formed. Forming such dangling bonds on the surface of the substrate may be referred to as activation. When the substrate on which the dangling bonds are formed is exposed to the atmosphere, for example, moisture in the air is bonded to the dangling bonds, and the substrate surface is covered with hydroxyl groups (OH groups). The surface of the substrate is in a state of being easily bonded to water molecules, that is, in a state of being easily hydrophilized. That is, as a result of activation, the surface of the substrate is likely to become hydrophilic.

  Further, in solid phase bonding, the presence of impurities such as oxides at the bonding interface, defects in the bonding interface, and the like affect the bonding strength. Therefore, cleaning of the bonding surface may be regarded as part of activation.

  Examples of the method for activating the substrates 210 and 230 include irradiation with radicals by DC plasma, RF plasma, and MW excitation plasma, as well as irradiation with sputter etching using an inert gas, ion beam, fast atom beam, and the like. Moreover, the activation by ultraviolet irradiation, ozone asher etc. can also be illustrated. Furthermore, chemical cleaning treatment using liquid or gaseous etchant can also be exemplified. Furthermore, the surface of the substrate may be made hydrophilic by applying pure water or the like to the surface to be a bonding surface of the substrate using a hydrophilization device (not shown). By the hydrophilization, the surface of the substrate is in a state in which the OH group is attached, that is, a state in which the surface is terminated by the OH group.

  Alternatively, an activation device that replaces the upper activation device 323 and the lower activation device 343 may be provided at a location different from the bonding portion 300, and the substrates 210 and 230 activated in advance may be carried into the bonding portion 300.

  The joint unit 300 further includes a control unit 150. The control unit 150 controls the operations of the X-direction drive unit 331, the Y-direction drive unit 332, the Z-direction drive unit 333, the upper activation device 323, and the lower activation device 343.

  Note that, prior to bonding of the substrates 210 and 230, the control unit 150 calibrates the relative position of the upper microscope 322 and the lower microscope 342 in advance. The calibration of the upper microscope 322 and the lower microscope 342 can be performed by, for example, focusing the upper microscope 322 and the lower microscope 342 on a common focus F and observing each other. Further, the common standard index may be observed with the upper microscope 322 and the lower microscope 342.

  Referring to FIG. 5 again, the controller 150 moves the moving stage 341 as shown in FIG. 7 for each of the substrates 210 and 230 carried in as described above, thereby opposing the substrates 210 and 230. Are observed using the upper microscope 322 and the lower microscope 342, whereby the positions of the plurality of alignment marks 213 are measured on each of the substrates 210 and 230 (step S103). Based on the positions of the plurality of alignment marks 213, the relative positions of the substrates 210 and 230 are calculated.

  The substrate 210 observed by the lower microscope 342 is held by the fixed stage 321 in a state of being held by the substrate holder 220 having the protrusion 251. Thus, the lower microscope 342 observes the substrate 210 in a state in which the raised portion 215 is formed, and detects the position of the alignment mark 213 on the surface of the substrate 210 including the raised portion 215.

  As described above, before detecting the position of the alignment mark 213, the protruding portion 215 is formed on the substrate 210 by the protruding member 250, and the position of the alignment mark 213 is detected in the state where the protruding portion 215 is formed. Accordingly, unlike the case where the raised portion 215 is formed on the substrate 210 after detecting the position of the alignment mark 213, it is possible to suppress the displacement of the alignment mark from the position when the position is detected due to the deformation of the substrate 210. Therefore, the decrease in alignment accuracy can be suppressed.

  As described above, in step S103, the control unit 150 calculates the movement direction and movement amount of the movement stage 341 necessary for alignment of the substrates 210 and 230 based on the relative position of the substrates 210 and 230. Next, the control unit 150 determines a holding force to be applied to the substrate 230 in order to adjust the amount of deformation generated at the time of bonding to the substrate 230 held by the moving stage 341 (step S104). That is, in this embodiment, the control unit 150 constitutes a determination unit that determines the holding force to the substrate 230.

  8 and 9 are graphs for explaining a method of determining the holding force that the control unit 150 applies to the substrate in step S104. The graph shown in FIG. 8 shows the relationship between the difference between the attractive force and the frictional force that cause the holding force acting on the substrate 230, and the magnification (ppm) of the substrate 230 on which the holding force acts. The unit μ shown in the figure indicates the coefficient of friction.

The bonding magnification shown in FIG. 8 will be described. First, the magnification of the substrate 230 alone is a difference (X) when a structure located at a distance X ₀ from the center of the substrate 230 in the design value is located at a distance X ₁ from the center of the actually manufactured substrate. It is a value obtained by dividing ₁ − X ₀ ) by the distance X ₀ .

  The magnification defined in this way is expressed in units of ppm (Parts Per Million), for example. In addition, in such magnification, isotropic magnification in which displacement vectors from the design position have the same amount of X component and Y component, and anisotropic magnification in which displacement vectors from the design position have components of mutually different amounts. And are included.

  In the graph shown in FIG. 8, the bonding magnification assigned to the vertical axis means the difference between the “magnifications” of the substrates 210 and 230 to be bonded. In the example shown in the drawing, the magnitude and sign of the value of the bonding magnification is used as a value calculated by the difference “lower substrate magnification−upper substrate magnification” between the magnification of the upper substrate 210 and the magnification of the lower substrate 230 in the bonding portion 300. Is determined.

  The difference in magnification based on the design position in each of the substrates 210 and 230 to be bonded is the amount of positional deviation of the substrates 210 and 230 in the laminated substrate 201. For example, structures which should be opposed to each other in the laminated substrate 201 when there is no positional deviation, for example, an electrical connection, cause positional deviation in the laminated substrate 201 by an amount according to the difference in magnification. When this positional deviation is excessive, in the laminated substrate 201, the electrical connection between the substrates 210 and 230 may be cut off.

  As shown in FIG. 8, in the case where a certain frictional force is generated between the substrate 230 and the substrate holder 240, a certain relationship is recognized that the magnification decreases when the suction force acting on the substrate increases. In addition, focusing on a certain suction force, a certain relationship is recognized in that the magnification decreases as the friction coefficient decreases. In other words, if the holding force acting on the substrate 230 is changed by changing the suction force or the friction force on the substrate 230, the magnification of the substrate 230 can be corrected.

  FIG. 9 is a graph in which the variation in magnification caused in the substrates 210 and 230 bonded on different days is plotted in the relationship between the suction force on the substrate 230 and the magnification of the substrate 230. As illustrated, even when bonding is performed under the same device conditions, the range of variation in magnification that occurs in the bonded substrates 210 and 230 is different. This is presumed that the variation in magnification generated in the substrates 210 and 230 is affected by the environmental conditions such as the temperature, atmospheric pressure, and humidity on the day when the bonding is performed. In other words, the magnification variation can be suppressed by correcting the magnification of the substrate 230 according to the environmental conditions.

  Based on the above knowledge, the control unit 150 of the multilayer substrate manufacturing apparatus 100 obtains the positional deviation amount 1 that occurs in the multilayer substrate 201 in step S104 (FIG. 5), and a threshold value that sets the acquired positional deviation amount in advance. Control including step 2 of calculating a correction amount to be suppressed below and step 3 of adjusting the holding power to at least one of the substrates 210 and 230 based on the calculated correction amount is performed.

  In stage 1, the control unit 150 acquires the amount of positional deviation that occurs in the layered substrate 201. The acquisition of the positional deviation amount may be acquired, for example, by measuring the positional deviation that has occurred in the laminated substrate 201 formed by bonding the substrates 210 and 230. The positional deviation thus obtained can be used with high accuracy with respect to the substrates 210 and 230 forming the laminated substrate 201 and, for example, the substrates 210 and 230 manufactured in the same lot.

  In addition, the control unit 150 may acquire the amount of positional deviation generated in the laminated substrate 201 based on environmental conditions of the environment in which the substrates 210 and 230 are joined, for example, the air temperature, humidity, and pressure acquired from the environment sensor. . Furthermore, the control unit 150 may acquire the amount of displacement generated in the laminated substrate 201 based on physical characteristics such as the thickness and rigidity of the substrates 210 and 230 and the specifications of the mounted circuit. Physical properties are included in the information about the substrates 210, 230.

  Further, the control unit 150 predicts a distortion generated in the process of bonding the substrates 210 and 230 based on the environmental conditions and physical characteristics, and calculates a positional deviation amount generated in the multilayer substrate 201 from the predicted distortion amount. It may be acquired by Thereby, it is possible to effectively correct distortion that has not occurred in the stage before joining.

  Thus, the control unit 150 can grasp the type and the amount of positional deviation to be corrected by acquiring the positional deviation occurring in the laminated substrate 201. Note that any of the various methods described above for acquiring the positional deviation amount may be selected and executed, or a plurality of methods may be used in combination.

  Next, in step 2, the control unit 150 calculates the amount of deformation caused to at least one of the substrates 210 and 230 in order to correct the amount of positional deviation in the laminated substrate 201. Here, the control unit 150 does not calculate the amount of deformation with the goal of completely eliminating the positional deviation, but determines the amount of deformation such that the amount of positional deviation in the laminated substrate 201 is equal to or less than a predetermined threshold. May be.

  As a result, the processing load of the control unit 150 can be suppressed, and the generation of the substrates 210 and 230 which are not bonded due to the inability to perform correction can be suppressed. Therefore, the throughput related to the production of the laminated substrate 201 can be reduced, and the material cost related to the substrates 210 and 230 can be suppressed.

  Subsequently, in step 3, the control unit 150 determines the holding power of at least one of the substrates 210 and 230 in the bonding unit 300 according to the amount of deformation calculated in step 2. Here, the control unit 150 may determine the holding force from the relationship between the holding force for the substrates 210 and 230 and the correction amount, which is prepared in advance by experiment, analysis, or the like. The holding force can be adjusted, for example, by the adsorption force of the substrate 210, 230 against the substrate holder 220, 240 and the friction force of the substrate 210, 230 against the substrate holder 220, 240.

  As shown in FIG. 10, the control unit 150 that has undergone the processing steps as described above moves the moving stage 341 while operating the upper activation device 323 and the lower activation device 343, thereby causing the substrates 210 and 230 to move. The surface is scanned with plasma to activate the bonding surface of the substrates 210 and 230 (step S105). The surfaces of the activated substrates 210 and 230 are brought into a state of being joined by contact without an inclusion such as an adhesive, or a process such as welding or pressure bonding.

  Next, the control unit 150 moves the movable stage 341 based on the relative position previously calculated in step S104 to align the substrates 210 and 230 with each other as shown in FIG. 11 (step S106). FIG. 12 is a schematic cross-sectional view showing the state of the substrates 210 and 230 aligned in step S106.

  At this stage, the control unit 150 controls the control valve 124 to connect the air passage 222 of the substrate holder 220 held by the fixed stage 321 to the negative pressure source 126. As a result, the substrate 210 is attracted to the attracting surface 221 and is separated from the opposing substrate 230.

  Further, the control unit 150 controls the control valve 144 in this state to adjust the holding force previously determined in step S104 so as to act on the substrate 230 held by the moving stage 341 (step S107). . As a result, the air passage 242 of the substrate holder 240 communicates with any of the negative pressure sources 146, 147, and 148, and a suction force is applied.

  Next, as shown in FIG. 13, the control unit 150 operates the Z-direction driving unit 333 to raise the moving stage 341. Thereby, the board | substrate 230 raises and the board | substrates 210 and 230 will contact each other partially eventually (step S108).

  FIG. 14 is a schematic cross-sectional view showing a state in which the substrates 210 and 230 are in contact with each other at the joint portion 300. The substrate 210 held by the fixed stage 321 is formed with a raised portion 215 that protrudes downward in the figure. Therefore, when the substrates 210 and 230 approach each other due to the elevation of the moving stage 341, the ridges 215 first contact the surface of the substrate 230.

  At this time, by pressing the raised portion 215 of the substrate 210 against the substrate 230, an atmosphere or the like sandwiched between the raised portion 215 and the substrate 230 is pushed out, and the substrates 210 and 230 come into direct contact with each other.

  By this contact, the contact region between the two activated substrates 210 and 230 is bonded by a chemical bond such as a hydrogen bond.

  In step S108, the control unit 150 controls the control valves 124 and 144 so that the air passages 222 and 242 of the substrate holders 220 and 240 are set to one of the negative pressure sources 126, 146, 147, and 148, respectively. Communicate. Therefore, the substrates 210 and 230 are adsorbed by the substrate holders 220 and 240, respectively, and contact with the substrates 210 and 230 at portions other than the bonding start point 209 is suppressed.

  When a predetermined time elapses with the contact state maintained, the bonding force between the two substrates 210 does not cause a displacement between the two substrates 210 and 230 in the process of bonding the two substrates 210 and 230. Secured.

  As a result, at the contact point of the substrates 210 and 230, a bonding start point 209 in which a part of the substrates 210 and 230 is bonded by contact is formed. Bonding at the bonding start point 209 is performed by hydrogen bonding, van der Waals bonding, covalent bonding, or the like. The joining start point 209 is formed when the substrates 210 and 230 come into contact with each other and joining is started. Note that the joining start point 209 may be a region having a certain area. After partially contacting the two substrates 210 and 230, the control unit 150 may maintain the two substrates 210 and 230 in contact with each other.

  Thereafter, on the fixed stage 321 side, the control unit 150 switches the control valve 124 to allow the air passage 222 of the substrate holder 220 to communicate with the open end to the atmospheric pressure. Thereby, the holding of the substrate 210 by the substrate holder 220 is released. Therefore, the bonding region of the substrates 210 and 230 autonomously expands due to the intermolecular force on the activated surface. At this time, by pressing the substrates 210 and 230 together, the contact area may be expanded by enlarging the area of a part in contact.

  FIG. 15 is a diagram schematically showing the process of expanding the bonding region as described above. As shown in the drawing, a junction wave in which the junction region where the substrates 210 and 230 are joined is sequentially expanded from the junction starting point 209 toward the radially outer side of the substrates 210 and 230 is generated, and the junction of the substrates 210 and 230 proceeds (Step S109).

  FIG. 16 is a schematic cross-sectional view showing a state in which the progress of the bonding wave of the substrates 210 and 230 as described above is completed. In FIG. 16, substrates 210 and 230 are bonded over the entire surface. Thereby, the joining of the substrates 210 and 230 is completed, and the substrates 210 and 220 form an integrated laminated substrate 201. At this time, the substrates 210 and 230 are bonded by a hydrogen bond, a van der Waals bond, a covalent bond, or the like. The formed multilayer substrate 201 is unloaded from the bonding portion 300, further accommodated in the substrate cassette 130, and unloaded from the multilayer substrate manufacturing apparatus 100 (step S110).

  The suction of the substrate 210 by the substrate holder 220 suctioned to the fixed stage 321 is completely canceled in step S109. Therefore, the laminated substrate 201 is held by the substrate holder 240 held on the moving stage 341. When the laminated substrate 201 is carried out from the bonding portion 300, the holding by the substrate holder 240 may be released first, and the laminated substrate 201 may be carried out alone or carried out together with the substrate holder 240 while being held by the substrate holder 240. Thereafter, the laminated substrate 201 may be further separated from the substrate holder 240 and accommodated in the substrate cassette 130.

  FIG. 17, FIG. 18 and FIG. 19 are diagrams for explaining the phenomenon that occurs in the process of the junction wave advancing from the junction starting point 209 toward the outer periphery in the junction of the substrates 210 and 230. In these figures, in the substrates 210 and 230 in the process of bonding, the boundary K between the region to which the substrates 210 and 230 have already been bonded and the region not bonded yet, that is, the vicinity of the tip of the advancing bonding wave Enlarged view.

  As shown in FIG. 17, in the immediate vicinity of the boundary K, the lower surface in the drawing of the substrate 210 released from being held by the substrate holder 220 expands and the upper surface in the drawing contracts. Furthermore, as shown in FIG. 18, when the position of the boundary K moves on the substrates 210 and 230, the place where the above deformation occurs also moves along with the boundary K.

  When the substrates 210 and 230 that are in contact with each other with deformation as described above are bonded to each other, the elongation of the substrate 210 is fixed by being bonded to the substrate 230, and the substrate 210 is enlarged with respect to the substrate 230. As if. For this reason, the amount of elongation of the substrate 210 increases between the lower substrate 230 held by the substrate holder 240 and the upper substrate 210 released from the substrate holder 220 so as to appear as a dotted line deviation in the drawing. A corresponding difference in magnification difference is manifested as a positional shift between the substrates 210 and 230. Furthermore, as shown in FIG. 19, the difference in magnification as described above becomes larger as the boundary K is accumulated toward the outer periphery of the substrates 210 and 230 and is closer to the outer periphery.

  Here, the positional deviation is a deviation from a predetermined relative position between the alignment marks 213 corresponding to each other between the two substrates 210 and 230 or between the corresponding connecting portions. If the misalignment amount is larger than the threshold value, the connections do not come in contact with each other or appropriate electrical continuity can not be obtained, or a predetermined bonding strength can not be obtained between the joints.

  FIG. 20 is a diagram for explaining in more detail the phenomenon that occurs at the boundary K of the joint. In the process of bonding between the substrate 230 adsorbed to the suction surface of the substrate holder 240 and the other substrate 210, the bonding surfaces of the activated substrates 210 and 230 are close to each other by intermolecular force etc. in the immediate vicinity of the boundary K. Attracting to each other, bonding progresses.

  Considering this state in detail, the substrate 210 is already partially bonded to the substrate 230 by forming the bonding start point 209 at the position of the protrusion 251 of the substrate holder 220 before being released from being held by the substrate holder 220. ing. For this reason, the substrate 210 released from being held by the substrate holder 220 attempts to autonomously bond to the substrate 230 facing away from the substrate holder 240 due to the rigidity of the substrate 210 itself in a region adjacent to the bonding start point 209. Therefore, on the lower surface of the substrate 210, a force P that exerts a deformation that causes magnification magnification in a region including the boundary K acts on the substrate 210.

  On the other hand, the approach of the substrate 210 to the substrate 230 is hindered by the viscosity of the air existing between the substrates 210 and 230 that were originally separated, and it takes time for the substrates 210 and 230 to join in the section. For this reason, together with the substrate 210 that is peeled off from the adsorbing substrate holder 240 by the intermolecular force acting between the substrates 210 and 230 and the magnification is increased in the region including the boundary K. A force Q which magnifies the magnification acts.

  Furthermore, the substrate 230 pulled away from the substrate holder 240 at the boundary K is still attracted to the substrate holder 240 in the area away from the boundary K. For this reason, at the boundary K, a force R that draws an unjoined region of the substrate 230 acts, and a bent portion 239 that forms a bend-like bend occurs in the substrate 230.

  When the bent portion 239 is generated on the substrate 230, a deformation that increases the magnification occurs on the upper surface of the substrate 230. Here, as shown in FIG. 21, if the holding force for holding the substrate 230 by the substrate holder 240 is large, the curvature of the bent portion 239 that is a hook-like deformation generated in the substrate 230 is small, and therefore the magnification of the substrate 230 is increased. There are few. On the other hand, as shown in FIG. 22, if the holding power of the substrate holder 240 for holding the substrate 230 is small, the curvature of the bent portion 239 produced on the substrate 230 will be large, and the magnification of the substrate 230 will also be large.

  In view of the above phenomenon, the deformation of the substrates 210 and 230 including the magnification changes include the rigidity of the substrates 210 and 230, the viscosity of the atmosphere, the friction between the substrate 230 and the substrate holder 240, the substrate 230 and the substrate. Physical properties such as the amount of deposits on the adsorption surface 241 of the holder 240, the degree of activation of the substrates 230 and 240, and the magnitude of the intermolecular force between the substrates 230 and 240 are affected. The physical properties referred to here include the thickness of the substrates 210 and 230, the initial magnification, etc., as well as the deformed state such as warpage, and the so-called use state such as the amount of extraneous matter.

  Further, the action of the physical characteristics on the substrates 210 and 230 changes depending on the environmental conditions such as the temperature of the air, the pressure, the humidity, and the type of gas. Therefore, the relationship between these physical characteristics and environmental conditions and the lamination conditions are stored in advance, and based on the measured physical characteristics or environmental conditions, the correction amount is set so that the positional deviation is a predetermined value or less, By correcting the substrate 230 to be bonded, variations in magnification due to changes in physical characteristics and environmental conditions can be suppressed.

  Further, the magnification of the substrate 230 changes according to the holding force acting on the substrate 230. Here, the holding force acting on the substrate 230 is related to the magnitude of the negative pressure that generates the suction force acting on the substrate 230 and the magnitude of the frictional force of the substrate 230 and the substrate holder 240. Therefore, the holding force with respect to the substrate 230 can be changed by changing at least one of the suction force when holding the substrate 230 and the frictional force between the substrate 230 and the substrate holder.

  The physical characteristics that affect the amount of deformation that occurs at the time of bonding the substrates 210 and 230 and the environmental conditions at the time of bonding can be grasped in advance by experiment, analysis, or the like. In addition, since the amount of deposits on the substrates 210 and 230 is difficult to measure, for example, it may be estimated from the amount of deposits on the substrate holders 220 and 240 estimated based on the number of times the substrate holders 220 and 240 are used.

  In the above example, the negative pressure that causes the substrate 230 to be attracted is changed to adjust the holding force that acts on the substrate 230. However, as understood from the graph shown in FIG. 8, even if the friction between the substrate 230 and the substrate holder 240 is changed, the holding force acting on the substrate 230 can be adjusted.

  Therefore, for example, by preparing a plurality of substrate holders 240 having different friction coefficients of the suction surface 241 and replacing the substrate holders 240 to be used according to the target correction amount, the deformation amount is adjusted when bonding the substrates 230. May be. Further, on the surface of the substrate 230 in contact with the substrate holder 240, one that changes the coefficient of friction may be applied or adhered. Furthermore, the adjustment of the suction force by changing the suction force and the adjustment of the friction force may be used in combination.

  In the above example, the substrate holder 220 has the protruding portion 251, and the bonding is started from the bonding start point 209 generated at the position of the raised portion 215 formed by the protruding portion 251. However, the method of forming the bonding start point 209 is not limited to the protrusion 251 fixed to the substrate holder 220. For example, a bonding start point 209 may be formed by providing a push pin advancing and retreating with respect to the suction surface 221 of the substrate holder 220 and pushing a part of the substrate 210. Furthermore, the substrate holder 240 may form a pin chuck having pins on the suction surface 241. Furthermore, the suction surface 221 of the substrate holder 220 may have a convex curved surface as a whole, and the bonding start point 209 may be formed at the vertex thereof.

  Further, in the above example, the raised portion 215 is formed on the substrate 210 when the substrate 210 is held by the substrate holder 220. However, as long as the raised portion 215 is formed before the joining start point 209 is formed, another timing, for example, after the position of the alignment mark 213 is detected in step S104 (FIG. 5) may be used.

  Furthermore, in the above-described example, the substrates 210 and 230 are carried into and bonded to the bonding unit 300 while being held by the substrate holders 220 and 240. However, even when the substrates 210 and 230 held directly to at least one of the fixed stage 321 and the moving stage 341 are joined without using the substrate holders 220 and 240, the magnification can be corrected by the above method. .

  FIG. 23 is a schematic cross-sectional view of the substrate holder 260 prepared as a countermeasure against the positional deviation caused by the change in the magnification generated in the joining process shown in FIGS. The substrate holder 260 has a main body 269 including an adsorption surface 261 and a ventilation path 262.

  The suction surface 261 of the substrate holder 260 has a cross-sectional shape in which the height gradually increases from the peripheral portion to the central portion, and in the illustrated example, the thickness gradually increases from the peripheral portion to the central portion It has a cross-sectional shape. Accordingly, the suction surface 261 is, for example, a spherical surface, and the central portion of the suction surface 261 has a height difference of height D with respect to the edge of the suction surface 261 in a state where the substrate holder 260 is placed horizontally. Have. The height D of the substrate holder 260 to be used corresponds to the correction amount that can be corrected by the substrate holder 260 and is determined based on the amount of misalignment predicted for the substrate 230 or the target correction amount for the substrate 230.

  The suction surface 261 is provided with a plurality of openings that communicate with the ventilation path 262. One end of the air passage 262 is coupled to one of an open end 145 and a negative pressure source 146, 147, 148 provided outside the substrate holder 260 via a control valve 144. It is a matter of course that the shape of the suction surface 261 is not limited to the spherical surface, for example, when the paraboloid formed when the parabola is rotated about the symmetry axis, the cylinder is cut along the central axis It may have a non-rotating shape, such as a cylindrical surface which is the outer peripheral surface of the lens.

  The control valve 144 causes the control valve 144 to connect the air passage 262 to one of the negative pressure sources 146, 147, and 148, so that the substrate 230 is adsorbed to the substrate holder 260. Since the adsorption surface 261 of the substrate holder 260 is a curved surface, the substrate 230 adsorbed to the substrate holder 260 is curved according to the shape of the adsorption surface 261.

  When the substrate 230 is adsorbed to the adsorption surface 261 of the substrate holder 260, the surface that is the upper surface in the figure of the substrate 230 is the center as compared with the center portion E in the thickness direction of the substrate 210 indicated by the alternate long and short dash line in the figure. From the center to the peripheral edge and expanded in the surface direction. Further, the back surface, which is the lower surface of the substrate 230 in the drawing, is reduced and deformed in the surface direction from the center of the substrate 230 toward the peripheral portion.

  FIG. 24 is a schematic cross-sectional view showing a case where the substrate holder 260 is used to hold the substrate 230 on the moving stage 341 side in the bonding unit 300. As shown in FIG. The state shown in the drawing corresponds to the stage in which only a part of the substrates 210 and 230 is bonded in step S108 shown in FIG.

  The substrate 210 held by the upper substrate holder 220 in the figure has a local protrusion 215 formed by the protrusion 251 of the protrusion 250. Therefore, when the substrates 210 and 230 are brought into contact with each other, the bonding starting point 209 is more reliably formed at one point substantially in the center of the raised portion 215 compared to the case where the suction surface 261 of the substrate holder 260 is flat.

  Next, holding | maintenance of the board | substrate 210 by the board | substrate holder 220 is cancelled | released, a joining wave is advanced between the board | substrates 210 and 230, and the area | region joined is expanded.

  As shown in FIG. 25, the upper surface of the substrate 230 held by the substrate holder 260 having the raised suction surface 261 is enlarged in magnification by following the curved shape of the suction surface 261. Therefore, when the substrate 210 is released from being held by the substrate holder 240 and joined to the substrate 230 while the substrate 210 is deformed, at least a part of the deformation of the substrate 210 is offset by the curved deformation of the substrate 230, and the substrates 210 and 230. The positional deviation of the laminated substrate 201 formed by bonding the two or more is equal to or less than a predetermined threshold value.

  Note that the predetermined threshold is, for example, in a range in which the electrical connection between the circuit of one substrate 210 and the circuit of the other substrate 230 can be maintained in the laminated substrate 201 formed by the substrates 210 and 230. It may be the maximum value of the positional deviation amount. Such a displacement amount is determined depending on the size of the connection terminals formed on the substrates 210 and 230, for example.

  In the above example, the substrate holder 260 in which the center of the suction surface 261 is raised is used, but the surface of the held substrate 230 is shrunk by using the substrate holder 260 in which the center of the suction surface 261 is depressed. The magnification can also be reduced. Thereby, when the circuit area 214 of the board | substrate 210 is small with respect to a design specification, the position shift of the board | substrate 230 can also be suppressed according to it.

  Further, the amount of change in magnification that occurs during the joining process is also affected by the height of the raised portion 215 formed on the substrate 210. Therefore, the curvature of the substrate holder 240 that holds the opposing substrate 230 may be adjusted according to the amount of protrusion by which the protruding member 250 of the substrate holder 220 protrudes from the suction surface 221. More specifically, for example, when using the substrate holder 240 having the projecting member 250 having a larger height, the substrate holder 240 whose central side is raised with a larger curvature may be selected and used.

  However, as described above, the correction of the magnification using the shape of the suction surface 261 of the substrate holder 260 is a discrete correction amount even if a plurality of substrate holders 260 having different curvatures of the suction surface 261 are prepared. It will be changed. Therefore, after the positional deviation of the laminated substrate is corrected by selecting the substrate holder 260 having different curvatures, the minute positional deviation which could not be corrected with the shape of the substrate holder 260 can be further corrected as described above. The positional deviation in the laminated substrate 201 can be corrected in a wide range and with high accuracy by correcting by adjustment.

  FIG. 26 is a flowchart showing another procedure for bonding the substrates 210 and 230. In FIG. 26, steps having the same contents as those in FIG. 5 are denoted by the same reference numerals. However, in the procedure shown in FIG. 26, the determination of the holding force (step S104) is first executed, and the holding force is adjusted (step S107) for the substrate 230 carried into the bonding portion 300 (step S102). First run. Thereafter, other steps except these steps are sequentially executed.

  Here, in step S104 of the procedure shown in FIG. 26, the holding force is determined based on environmental conditions such as air temperature, atmospheric pressure, and humidity, and physical characteristics such as rigidity, friction coefficient, and deformation state of the substrates 210 and 230. Ru. Here, the deformed state means the type and degree of at least one of the three-dimensional distortions of the substrates 210 and 230.

  By the above procedure, for example, when a plurality of substrates 210 and 230 of the same lot having the same manufacturing conditions are bonded, the bonding is continuously performed without adjusting the holding force every time the laminated substrate 201 is manufactured. Can improve the throughput of mass production. Furthermore, the procedure shown in FIG. 5 may be used in combination with the procedure shown in FIG. As a result, the change in magnification due to environmental conditions and physical characteristics is corrected in advance according to the procedure shown in FIG. 26, so the burden of individual adjustment for each laminated substrate 201 can be reduced.

  The procedure shown in FIG. 5 differs from the procedure shown in FIG. 26 in that the determination of the suction force (step S104) is before or after the alignment of the substrates 210 and 230 (step S106). Do. Such a difference is different in whether or not the control unit 150 grasps information for alignment at the stage of determining the suction force.

  For this reason, the procedure shown in FIG. 5 corrects the initial magnification difference for each of the loaded substrates 210 and 230, so that the difference between the initial magnifications of the substrates 210 and 230 is large enough to affect the bonding accuracy. It is preferably applicable. In addition, when the substrates 210 and 230 to the extent that the difference in the initial magnification does not affect the bonding accuracy, the procedure shown in FIG. 26 can be preferably applied. However, even in the procedure shown in FIG. 26, the initial magnification can be corrected for each of the substrates 210 and 230.

  Further, in the above-described example, the holding force with respect to the substrates 210 and 230 is adjusted before a part of the substrates 210 and 230 is in contact and a bonding start point is formed. However, even after the bonding start point is formed, the holding force with respect to the substrates 210 and 230 may be adjusted if it is a stage before the expansion of the bonding area starts. Furthermore, even after the bonding start point is formed and the expansion of the bonding area is started, before the area where the holding force is adjusted among the areas of the substrates 210 and 230 held by the substrate holder is bonded to each other. If so, the holding force on the substrates 210 and 230 may be partially adjusted.

  FIG. 27 is a schematic plan view showing the structure of another substrate holder 280. As shown in FIG. In the illustrated substrate holder 280, the suction surface 281 is divided into a plurality of regions 282 in the circumferential direction and the radial direction of the substrate holder 280, and the holding force can be adjusted by changing the suction force for each region 282. Therefore, for example, nonlinear distortion caused by crystal anisotropy or the like of the substrate 230 can be corrected by obtaining a positional deviation for each region 282, determining a correction amount, and adjusting the holding force based on the correction amount.

  It is to be noted that the non-linear distortion is a distortion component other than a distortion component generated qualitatively or quantitatively along the radial direction of the substrate 210, 230 or any other fixed direction among the distortions generated in the substrate 210, 230. Point to. In other words, the non-linear strain is a strain in which the rate of increase of displacement changes in the plane direction of the substrates 210 and 230, and is, for example, opposite to each other along the line segment in two regions divided by the line segment passing through the center of the substrate. It contains orthogonal distortion that occurs in the direction.

  Further, as a general tendency, the lower the holding force with respect to the substrate 230, the larger the range of magnification change with respect to the change in suction force. However, if the holding force is lowered, it is impossible to correct the nonlinear distortion such as the crystal anisotropy as described above. Therefore, even if the holding force adjustment range is limited in accordance with the characteristics of the substrates 210 and 230 to be bonded. Good.

  In each of the above embodiments, the substrates 210 and 230 are held by the suction force generated by the negative pressure, and the magnification is corrected by changing the magnitude of the negative pressure. However, the suction force applied for the purpose of holding the substrates 210 and 230 is not limited to negative pressure. For example, when holding the substrates 210 and 230 by electrostatic adsorption, the suction force is changed by changing the applied voltage or the like. It is also good. Further, adsorption by negative pressure and adsorption by electrostatic force may be used in combination. Further, when a plurality of adsorption methods are used in combination, the holding force as a whole may be adjusted by fixing one suction force and changing the other suction force.

  Moreover, in each embodiment, although the example which controlled holding force based on the physical characteristic among the information regarding the board | substrates 210 and 230 was shown, you may control holding force based on the information regarding above-described manufacturing conditions. In this case, the manufacturing conditions may be acquired from an exposure apparatus, a polishing apparatus, an etching apparatus, a cleaning apparatus, or the like. Further, it is also possible to estimate the amount of misalignment that occurs between the two substrates 210 and 230 from the manufacturing conditions, calculate a correction amount based on the estimated amount of misalignment, and set the holding force based on this amount of correction. In this case, the manufacturing conditions, the positional deviation amount or the correction amount and the relationship between the holding force are stored in advance.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various changes or modifications can be added to the above embodiment. It is also apparent from the scope of the claims that the embodiments added with such alterations or improvements can be included in the technical scope of the present invention.

  The execution order of each process such as operations, procedures, steps, and steps in the apparatuses, systems, programs, and methods shown in the claims, the specification, and the drawings is particularly “before”, “preceding” It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. With regard to the flow of operations in the claims, the specification and the drawings, even if it is described using “first,” “next,” etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

Reference Signs List 100 laminated substrate manufacturing apparatus, 110 housing, 120, 130 substrate cassette, 124, 144 control valve, 125, 145 open end, 126, 146, 147, 148 negative pressure source, 140 transfer unit, 150 control unit, 151 environment sensor 300 junctions, 400 holder stockers, 500 pre-aligners, 201 laminated substrates, 209 junction starting points, 210, 230 substrates, 211 scribe lines, 213 alignment marks, 214 circuit areas, 215 ridges, 220, 240, 260 substrate holders, 221 , 241, 261 suction surface, 222, 242, 262 air passage, 229, 249, 269 body portion, 239 curved portion, 251 protrusion portion, 300 joint portion, 310 frame, 311 top plate, 313 bottom plate, 321 fixed stage, 322 upper microscope, 3 3 above activation device, 331 X-direction driving section, 332 Y-direction driving section, 333 Z-direction driving section, 341 moving stage 342 under a microscope, 343 under activation device

Claims (8)

A holding unit for holding the first substrate;
A bonding portion for bonding the first substrate and the second substrate by bonding at least a portion of the second substrate to at least a portion of the first substrate held by the holding portion and expanding a bonding region;
The holding when bonding the first substrate and the second substrate based on information on at least one of the first substrate and the second substrate and at least one of environmental conditions of the bonding portion And a determination unit that determines the holding power of the unit.   The bonding apparatus according to claim 1, wherein the environmental condition includes at least one of a temperature, a humidity, a gas type, and an atmospheric pressure of an environment in which the first substrate and the second substrate are placed.   3. The bonding apparatus according to claim 1, wherein the information related to at least one of the first substrate and the second substrate includes physical properties of at least one of the first substrate and the second substrate.   The physical property includes an initial magnification difference between the first substrate and the second substrate, a rigidity of at least one of the first substrate and the second substrate, the rigidity of the first substrate, Friction force against the holding portion, at least one shape of the first substrate and the second substrate, surface properties of at least one of the first substrate and the second substrate, and the first substrate and the The bonding apparatus according to claim 3, comprising at least one degree of activation of at least one surface of the second substrate.   5. The information on at least one of the first substrate and the second substrate includes information on a manufacturing condition of at least one of the first substrate and the second substrate. Bonding device as described. A control unit configured to control the holding force based on the determination by the determination unit;
6. The bonding apparatus according to claim 1, wherein the control unit changes the holding force by changing a negative pressure generated between the first substrate and the holding unit.   The bonding apparatus according to claim 6, wherein the control unit changes the holding force for each of the plurality of regions by changing negative pressure generated individually for the plurality of regions of the first substrate. . Holding the first substrate in the holder;
Joining at least a portion of the second substrate to at least a portion of the first substrate held by the holding portion, and then enlarging a joining region to join the first substrate and the second substrate; ,
Holding force of the holding portion when bonding the first substrate and the second substrate based on information on at least one of the first substrate and the second substrate and at least one of environmental conditions Determining the stage,
Joining method including.