JP2019127579A - Treatment method of processing object, composition, and manufacturing method of semiconductor device - Google Patents

Abstract

To provide a processing method of a processing object using a temporarily fixing material having viscosity at a temperature at which heat degradation of the processing object is not caused, and melting viscosity which is not largely reduced even under high temperature environment.SOLUTION: There is provided a processing method of a processing object having a process for forming a laminate having a supporter, a temporarily fixing material, and the processing object, a process for processing the processing object and/or moving the laminate, and a process for separating the processing object from the supporter, the temporarily fixing material has a layer (I) formed by a composition containing a hydrogenated block copolymer (A) having a structural unit derived from an aromatic compound containing a polymerizable double bond (a1) and a structural unit derived from conjugated diene (a2), and a non-hydrogenated random copolymer (B) containing a structural unit derived from the aromatic compound containing the double bond (b1) and a structural unit derived from the conjugated diene (b2), in which percentage content of the (a1) in the (A) is 20 mass% or more and the processing object is held on the temporarily fixing material.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a processing method for a processing object such as a method for processing a processing object in a state in which the processing object such as a semiconductor wafer is bonded to a support such as a glass substrate via a temporary fixing material. , A composition, and a method of manufacturing a semiconductor device.

  There is a method of performing processing such as dicing, back grinding and photofabrication on an object to be treated in a state where the object to be treated such as a semiconductor wafer is joined to a support such as a glass substrate via a temporary fixing material. Proposed. The temporary fixing material is required to be able to temporarily fix an object to be treated on a support during processing, and to be able to easily separate the support from the object after processing.

  Patent Document 1 discloses that the temporary fixing material is irradiated with light to reduce its adhesive force, or the light is irradiated while separating the support and the object to be treated such as chips from the temporary fixing material. An example in which a layer containing a hydrogenated conjugated diene polymer is used for the bonding layer is disclosed.

JP, 2017-079274, A

  In order to bond the support and the object to be processed with the temporary fixing material, it is necessary to melt and stick the temporary fixing material. Here, in consideration of deterioration due to heating of the object to be processed, a temporary fixing material that melts at a temperature at which the heat deterioration does not occur and has adhesiveness is preferable.

  On the other hand, temporary fixing materials are exposed to high-temperature environments in photofabrication such as formation of through holes, bumps and rewirings, lamination of chips including electrical connection between chips by melt flow of plating, etc. Therefore, it is preferable to use a temporary fixing material whose melt viscosity does not greatly decrease so that the support and the object to be treated do not shift and move even in a high temperature environment.

  The present invention relates to a method for treating an object to be treated using a temporary fixing material which has tackiness at a temperature at which the thermal degradation does not occur and does not significantly decrease the melt viscosity even in a high temperature environment, the temporary fixing It is an object to provide a composition for forming a material and a method for manufacturing a semiconductor device.

  The present inventors diligently studied to solve the above problems. As a result, it has been found that the above-mentioned problems can be solved by a processing method for a processing object having the following configuration, and the present invention has been completed. That is, the present invention relates to, for example, the following [1] to [13].

  [1] (1) forming a laminate having a support, a temporary fixing material, and an object to be treated; (2) processing the object to be treated and / or moving the laminate; (3) separating the object to be treated from the support, wherein the temporary fixing material is a structural unit (a1) derived from an aromatic compound containing a polymerizable double bond and a structural unit derived from a conjugated diene Non-hydrogenated random co-polymer having a hydrogenated block copolymer (A) having (a2), a structural unit (b1) derived from an aromatic compound containing a polymerizable double bond, and a structural unit (b2) derived from a conjugated diene It has a layer (I) formed of a composition containing a polymer (B), and the content ratio of the structural unit (a1) contained in the hydrogenated block copolymer (A) is 20 % By mass or more, and in the laminate, the object to be treated is It is held on the temporary fixing material, processing method of the processing object.

  [2] The content of the non-hydrogenated random copolymer (B) in the composition is 0.1 to 20 parts by mass with respect to 100 parts by mass of the hydrogenated block copolymer (A). The processing method of the process target object as described in said [1].

  [3] The content of the structural unit (b2) in the non-hydrogenated random copolymer (B) is 100 parts by mass of the total content of the structural unit (b1) and the structural unit (b2). The processing method of the processing target according to [1] or [2], wherein the processing target is 30 to 97 parts by mass.

  [4] The processing method of a processing subject according to any one of the above [1] to [3], wherein the temporary fixing material further has a light absorbing layer (II).

  [5] The method for treating a processing target according to any one of the above [1] to [4], wherein the temporary fixing material is irradiated with light from the support side before and / or during the separation.

  [6] The processing of the processing object according to the above [4], wherein the laminate has the respective elements in the order of the support, the light absorbing layer (II), the layer (I) and the processing object. Method.

  [7] The processing method for a processing object according to any one of [1] to [6], wherein the processing object has a wiring layer.

  [8] The processing method of the processing object according to [7], wherein the processing includes disposing at least one selected from a semiconductor wafer and a semiconductor chip on the wiring layer.

  [9] A hydrogenated block copolymer (A) having a structural unit (a1) derived from an aromatic compound containing a polymerizable double bond and a structural unit (a2) derived from a conjugated diene, and a polymerizable double bond A non-hydrogenated random copolymer (B) having a structural unit (b1) derived from an aromatic compound and a structural unit (b2) derived from a conjugated diene, which is contained in the hydrogenated block copolymer (A) The content ratio of the structural unit (a1) is 20% by mass or more.

  [10] In the above [9], the content of the non-hydrogenated random copolymer (B) is 0.1 to 20 parts by mass with respect to 100 parts by mass of the hydrogenated block copolymer (A). Composition as described.

  [11] The content of the structural unit (b2) in the non-hydrogenated random copolymer (B) is 100 parts by mass of the total content of the structural unit (b1) and the structural unit (b2). The composition according to [9] or [10], wherein the composition is 30 to 97 parts by mass.

  [12] A method of manufacturing a semiconductor device, wherein a processing object is processed by the processing method according to any one of [1] to [8] to manufacture a semiconductor device.

  [13] (1a) forming a laminate having a support, a temporary fixing material, and a wiring layer, and (2a) arranging at least one selected from a semiconductor wafer and a semiconductor chip on the wiring layer. And (3a) separating the wiring layer from the support, wherein the temporary fixing material includes an aromatic compound-containing structural unit (a1) and a conjugated diene containing a polymerizable double bond. A hydrogenated block copolymer (A) having a structural unit (a2) derived from the above, and a structural unit (b1) derived from an aromatic compound containing a polymerizable double bond and a structural unit (b2) derived from a conjugated diene A layer (I) formed from a composition containing a hydrogenated random copolymer (B), and the structural unit (a1) contained in the hydrogenated block copolymer (A) The content ratio is 20% by mass or more, The wiring layer in Sotai is held on the temporary fixing material, a method of manufacturing a semiconductor device.

  According to the present invention, there is provided a method for treating an object to be treated using a temporary fixing material that has adhesiveness at a temperature at which the thermal deterioration does not occur and that does not greatly reduce the melt viscosity even under a high temperature environment. A composition for forming a fixing material and a method for manufacturing a semiconductor device can be provided.

FIG. 1 is a cross-sectional view of an embodiment according to a laminate formed in the present invention.

Hereinafter, after describing the laminate formed by the method of treating an object to be treated of the present invention and the composition of the present invention, a method of treating an object to be treated and a method of manufacturing a semiconductor device will be described.
Each component exemplified in the present specification, for example, each component in the composition, can be used singly or in combination of two or more unless otherwise stated.

  In the present invention, the temporary fixing material is a material used for temporarily fixing the processing object on the support so that the processing object is not displaced and moved from the support when the processing object is processed and / or moved. It is The object to be treated means an object to be subjected to the processing and movement in the step (2) described later (for example, the step in the steps (1) and (2) described later). It may mean an object after receiving (for example, a stage in steps (3) and (4) described later). In the present specification, an object to be treated is also simply referred to as an "object".

[Laminate]
The laminate formed in the present invention has a support, a temporary fixing material, and an object to be treated, wherein the object to be treated is held on the temporary fixing material. For example, the processing object to be processed or moved is temporarily fixed on the support via the temporary fixing material. The laminate preferably has a support, a temporary fixing material, and an object to be treated in this order in the stacking direction.

  The temporary fixing material has a layer (I). The layer (I) comprises a hydrogenated block copolymer (A) having a structural unit (a1) derived from an aromatic compound containing a polymerizable double bond and a structural unit (a2) derived from a conjugated diene, and a polymerizable double The composition is formed from a composition containing a nonhydrogenated random copolymer (B) having a structural unit (b1) derived from an aromatic compound containing a bond and a structural unit (b2) derived from a conjugated diene. Here, the content rate of the structural unit (a1) contained in the said hydrogenated block copolymer (A) is 20 mass% or more.

  In this invention, the hydrogenated block copolymer (A) whose content rate of a structural unit (a1) is 20 mass% or more, and a non-hydrogenated random copolymer (B) are used. In the present invention, compared with the case where the non-hydrogenated random copolymer (B) is not used, the layer (I) has a relatively low melt viscosity at, for example, 220 ° C. The object can be temporarily fixed on the temporary fixing material. Moreover, in this invention, compared with the case where the hydrogenated block copolymer whose content rate of a structural unit (a1) is less than 20 mass% is used, the fall rate of the melt viscosity in the layer (I) accompanying a temperature rise is small. Therefore, the object can be held even under high processing temperatures, for example, above 220 ° C.

  As shown in FIG. 1, for example, the temporary fixing material preferably further includes a light absorption layer (II) in addition to the layer (I). For example, when the light absorption layer (II) is irradiated with light to be described later, the light absorption layer (II) absorbs light and decomposes or deteriorates. Due to this decomposition or alteration by light irradiation, the strength or adhesive strength of the light absorbing layer (II) decreases. Then, by applying an external force to the laminate, cohesive failure occurs in the light absorbing layer (II), or interface failure occurs at the interface between the light absorbing layer (II) and the layer in contact with the layer. Therefore, the support and the object can be easily separated by applying an external force to the laminated body after the light irradiation treatment.

  Processing objects such as semiconductor wafers and semiconductor chips may deteriorate when irradiated with light. After the temporary fixing material is irradiated with light to reduce its adhesive force or light irradiation is performed, in the light irradiation separation method in which the support and the object are separated, the light used is prevented from reaching the object The light-absorbing layer (II) of the temporary fixing material is preferably capable of blocking the light.

  The temporary fixing material may have any other layer in addition to the layer (I) and the layer (II). In the case of a laminate having the above elements in the order of support, light absorbing layer (II), layer (I) and object, for example, an intermediate layer may be provided between layer (I) and layer (II) In addition, other layers can be provided between the layer (I) and the object or between the layer (II) and the support.

  In the laminate, the layer (I) is preferably a layer in contact with the object because the temporary fixing material has sufficient holding power to temporarily fix the object, as shown in FIG. It is more preferable to use a laminate having the respective components in the following order: support (10), light absorbing layer (II) (22), layer (I) (21) and object (30).

  The thickness of the temporary fixing material is usually 0.01 to 1000 μm, preferably 0.1 to 500 μm, more preferably 0.2 to 300 μm. In addition, the thickness of each layer of layer (I) and layer (II) is each independently usually 0.01 μm or more, preferably 0.1 μm or more, and more preferably 0.2 μm or more. In such an embodiment, the temporary fixing material has sufficient holding power for temporarily fixing the object, and the object does not fall off from the temporary fixing surface during processing or movement processing.

[Layer (I)]
The layer (I) is formed using a composition containing the hydrogenated block copolymer (A) and the non-hydrogenated random copolymer (B) (hereinafter also referred to as “temporary fixing composition (I)”). Be done. The temporary fixing composition (I) usually contains a solvent.

  Melt viscosity at 180 ° C. of layer (I) is preferably 120,000 Pa · s or less, more preferably 100,000 to 40,000 Pa · s, further preferably 90,000 to 50,000 Pa · s. In addition, the melt viscosity reduction rate (%) calculated by (melt viscosity of 180 ° C. melt viscosity of 250 ° C.) / Melt viscosity of 180 ° C. of layer (I) is preferably 85% or less, more Preferably it is 80% or less. The lower the melt viscosity reduction rate, the better. However, the lower limit is, for example, 40%. Details of the conditions for measuring the melt viscosity of layer (I) are described in the examples.

<Hydrogenated block copolymer (A)>
The hydrogenated block copolymer (A) (hereinafter simply referred to as "copolymer (A)") is a structural unit (a1) derived from an aromatic compound containing a polymerizable double bond and a structural unit derived from a conjugated diene ( a2).

In the present specification, the “structural unit derived from a compound” generally means a structural unit based on the reaction of the polymerizable double bond moiety contained in the compound.
The copolymer (A) is, for example, a hydrogenated product of a block copolymer obtained by polymerizing the aromatic compound and the conjugated diene, ie, hydrogenates the block copolymer (in the present specification, “water It is also referred to as “addition”). The hydrogenation here is performed on the structural unit derived from the conjugated diene.

  The structural unit (a1) is, for example, a structural unit represented by the formula (a1-1). The structural unit (a2) is, for example, at least one selected from the structural unit represented by formula (a2-1) and the structural unit represented by formula (a2-2).

式（ａ１−１）、（ａ２−１）および（ａ２−２）中、Ｒ¹は水素原子またはアルキル基であり、Ｒ²は直接結合またはアルカンジイル基であり、好ましくは直接結合であり、Ａｒは置換基を有することができる芳香族基であり、Ｒ³はそれぞれ独立に水素原子またはアルキル基である。アルキル基およびアルカンジイル基の炭素数は、通常は１〜８、好ましくは１〜４である。芳香族基の環を構成する炭素の炭素数は、通常は６〜１８、好ましくは６〜１０であり、例えば、フェニル基、ナフタレニル基、アントラセニル基等の芳香族炭化水素基、ピリジニル基等の芳香族複素環式基が挙げられ、芳香族基における置換基としては、例えば、アルキル基、アルケニル基、アリール基、アミノ基が挙げられる。

In formulas (a1-1), (a2-1) and (a2-2), R ¹ is a hydrogen atom or an alkyl group, R ² is a direct bond or an alkanediyl group, preferably a direct bond, Ar is an aromatic group which may have a substituent, and each R ³ is independently a hydrogen atom or an alkyl group. The carbon number of the alkyl group and the alkanediyl group is usually 1 to 8, preferably 1 to 4. The carbon number of carbon constituting the ring of the aromatic group is usually 6 to 18, preferably 6 to 10, and examples thereof include aromatic hydrocarbon groups such as phenyl group, naphthalenyl group and anthracenyl group, pyridinyl group and the like The aromatic heterocyclic group is mentioned, As a substituent in an aromatic group, an alkyl group, an alkenyl group, an aryl group, an amino group is mentioned, for example.

  As an aromatic compound containing a polymerizable double bond, for example, styrene, α-methylstyrene, o, m or p-methylstyrene, t-butylstyrene, divinylbenzene, N, N-dimethyl-p-aminostyrene, N, N-diethyl-p-aminostyrene, vinyl pyridine, vinyl naphthalene and vinyl anthracene are mentioned. Among these, styrene and α-methylstyrene are preferable from the viewpoints of availability and ease of polymerization.

  As a conjugated diene, for example, 1,3-butadiene, 2-methyl-1,3-butadiene (isoprene), 2,3-dimethyl-1,3-butadiene, 1,3-pentadiene, 2-methyl-1, 3-butadiene 3-pentadiene, 1,3-hexadiene, 1,3-octadiene, 3-butyl-1,3-octadiene, 4,5-diethyl-1,3-octadiene. Among these, 1,3-butadiene and isoprene are preferable.

  In a copolymer (A), the content rate of a structural unit (a1) is 20 mass% or more, Preferably it is 20-40 mass%. The content rate can be measured by NMR.

The content rate of structural unit (a1) influences the reduction rate of the melt viscosity of layer (I). The copolymer (A) is a hydrogenated block copolymer, and since the structural units have regularity, the crystallinity is high, and the layer containing only the copolymer (A) has a low rate of decrease in melt viscosity. In particular, since the structural unit (a1) greatly contributes to the crystallinity of the copolymer (A), the content ratio of the structural unit (a1) affects the reduction rate of the melt viscosity of the layer (I).
When the content ratio is less than 20% by mass, the decreasing rate of the melt viscosity due to the temperature rise is large, and the temporary fixing material can not hold the object at a high processing temperature. When the content ratio is 20% by mass or more, the melt viscosity can be maintained at a high temperature, and the temporarily fixed material can hold the object at a high processing temperature.

  In one embodiment, the copolymer (A) is a copolymer in which a structural unit derived from a monomer having a polymerizable double bond comprises only the structural unit (a1) and the structural unit (a2). It is preferable from the point of the reduction rate of

  The hydrogenation rate of the copolymer (A) is preferably 90 mol% or more, and more preferably 95 mol% or more. A polymer having a hydrogenation rate in the above range is excellent in heat resistance. The hydrogenation rate can be measured by infrared spectroscopy (Morello method).

  The copolymer (A) is a block copolymer, and for example, a polymer block (A1) comprising a structural unit (a1) derived from an aromatic compound containing a polymerizable double bond, and a structural unit derived from a conjugated diene A block copolymer having a polymer block (A2) composed of (a2) is more preferable.

  The block copolymer can be linked via the residue of the coupling agent. As a coupling agent, a bifunctional or higher functional coupling agent can be used. For example, the coupling agent described in Unexamined-Japanese-Patent No. 2014-095023, 2010-116570, 2010-001371, and 2010-254983 is mentioned.

  Specific examples of the copolymer (A) include polymerizable double bond-containing aromatic compound-based elastomers, for example, styrene-ethylene / butylene-styrene block copolymer (SEBS), styrene-ethylene / propylene-styrene block copolymer Block co-polymer of aromatic compound and conjugated diene containing a polymerizable double bond, such as polymer (SEPS), styrene-ethylene / butylene block copolymer (SEB), styrene-ethylene / propylene block copolymer (SEP) Hydrogenates of polymers; hydrogenated conjugated diene-based elastomers, for example, polymerizable double bond-containing aromatic compounds-olefin crystal-based block copolymers such as styrene-ethylene / butylene-olefin crystal block copolymers (SEBC) Can be mentioned.

  The polystyrene equivalent weight average molecular weight (Mw) of the copolymer (A) according to gel permeation chromatography (GPC) method is usually 10,000 to 300,000, preferably 20,000 to 250,000, Preferably, it is 30,000 to 200,000.

  The weight average molecular weight (Mw) of the copolymer (A) was determined by connecting in series a GPC column (two G2000HXL, one G3000HXL, one G4000HXL) manufactured by Tosoh Corp., and measuring apparatus “HLC-8220-GPC”. (Manufactured by Tosoh Corp.), it can be calculated by measuring the signal detected by the refractive index method under the conditions of tetrahydrofuran and a GPC column temperature of 40 ° C., in terms of polystyrene, using a developing solvent of Toso Corporation. Mw of copolymer (B) mentioned later can also be measured by the same method.

  A well-known method is employable as a manufacturing method of a copolymer (A). For example, a copolymer (A) is obtained by living anion polymerization of a monomer corresponding to each structural unit in an organic solvent using an organic alkali metal compound as a polymerization initiator and hydrogenating the obtained polymer. Can. For example, methods described in JP-A-2014-95023, JP-A-2010-254983, JP-A-2010-116570, JP-A-2010-1371, and JP-A-2017-079274 can be mentioned.

<Non-hydrogenated random copolymer (B)>
The non-hydrogenated random copolymer (B) (hereinafter simply referred to as "copolymer (B)") is a structural unit derived from an aromatic compound containing a polymerizable double bond (b1) and a structural unit derived from a conjugated diene It has (b2) and the structural unit (b2) is not hydrogenated.

  The copolymer (B) and the copolymer (A) mix well. As a result, the temporary fixing material layer (I) has adhesiveness even at a low temperature and can lower the temperature at which the object is temporarily fixed on the temporarily fixing material. Degradation can be reduced.

Since the copolymer (A) is a hydrogenated block copolymer, it has high crystallinity, and a layer containing only the copolymer (A) is difficult to melt.
On the other hand, the layer containing the copolymer (A) and the copolymer (B) is relatively easy to melt as compared with the layer containing only the copolymer (A). The reason is assumed to be as follows. Each of the copolymer (A) and the copolymer (B) has a structural unit derived from an aromatic compound and also has a structural unit derived from a conjugated diene. Therefore, the random copolymer (B) mixes well with the block copolymer (A) because the combination of constituent monomer species is the same as or similar to the block copolymer (A), and as a result The crystallinity is broken compared to the layer consisting only of the copolymer (A). As a result, it is considered that the melt viscosity of the whole layer (I) could be reduced.

  The structural unit (b1) is, for example, a structural unit represented by the formula (b1-1). The structural unit (b2) is, for example, at least one selected from the structural unit represented by the formula (b2-1) and the structural unit represented by the formula (b2-2).

式（ｂ１−１）、（ｂ２−１）および（ｂ２−２）中におけるＲ¹〜Ｒ³およびＡｒは、それぞれ、式（ａ１−１）、（ａ２−１）および（ａ２−２）中における同一記号と同義である。

R ^{1 to} R ³ and Ar in the formulas (b1-1), (b2-1) and (b2-2) are respectively in the formulas (a1-1), (a2-1) and (a2-2) It is synonymous with the same symbol in.

  Examples of the aromatic compound containing a polymerizable double bond and a conjugated diene in the copolymer (B) include the specific examples and preferred examples described above for the copolymer (A). However, in the copolymers (A) and (B), the aromatic compounds leading to the structural units (a1) and (b1) may be the same or different, and the above lead to the structural units (a2) and (b2) The conjugated dienes may be the same or different.

  In the copolymer (B), the content of the structural unit (b2) is usually 30 to 97 parts by mass, preferably 100 parts by mass of the total content of the structural unit (b1) and the structural unit (b2). Is 40 to 95 parts by mass. In such an embodiment, the layer (I) obtained is preferable because it has adhesiveness even at a low temperature, and the rate of decrease in melt viscosity with increasing temperature decreases. These content rates can be measured by NMR.

  In one embodiment, the copolymer (B) is preferably a copolymer in which the structural unit derived from a monomer having a polymerizable double bond is composed only of the structural unit (b1) and the structural unit (b2).

Specific examples of the copolymer (B) include, for example, a styrene / butadiene random copolymer and a styrene / isoprene random copolymer.
The polystyrene equivalent weight average molecular weight (Mw) of the copolymer (B) according to gel permeation chromatography (GPC) method is usually 1,000 to 20,000, preferably 1,500 to 15,000, Preferably, it is 2,000 to 9,000. In such an embodiment, the copolymer (B) can be better mixed with the copolymer (A).

  The copolymer (B) is obtained, for example, by polymerizing an aromatic compound containing a polymerizable double bond and a conjugated diene. A well-known method is employable as a manufacturing method of a copolymer (B).

  The total content of the copolymer (A) and the copolymer (B) in the temporary fixing composition (I) is usually 80% of the solid content in the temporary fixing composition (I). It is at least mass%, preferably at least 90 mass%, more preferably at least 95 mass%. The solid content refers to all components other than the solvent. Such an embodiment is preferable in terms of adhesion, separation and heat resistance of the layer (I).

  The content of the copolymer (B) in the temporary fixing composition (I) is usually 0.1 to 20 parts by mass, preferably 0.5 to 50 parts by mass with respect to 100 parts by mass of the copolymer (A). It is 10 parts by mass, more preferably 0.8 to 5 parts by mass. In such an embodiment, the copolymer (B) can be better mixed with the copolymer (A).

<Other ingredients>
The temporarily fixing composition (I) can further contain a resin other than the copolymers (A) and (B). Examples of the resin include cycloolefin resin, terpene resin, petroleum resin, and novolac resin.

  The temporary fixing composition (I) may optionally contain at least one selected from an antioxidant, a polymerization inhibitor, an adhesion assistant, a polystyrene crosslinked particle, a surfactant and a metal oxide particle. it can.

[Light absorbing layer (II)]
It is preferable that the temporarily fixing material further has a light absorption layer (II). The light absorption layer (II) usually contains a light absorber.

  From the viewpoint of decomposition or alteration of the light absorption layer (II) and light blocking properties, the light absorption layer (II) preferably has a low light transmittance with respect to light used in the light irradiation treatment. The light absorption of the light absorption layer (II) at the wavelength of light used in the light irradiation treatment is preferably 10% T or less, more preferably 5% T or less, and still more preferably 1% T or less.

  The light absorption layer (II) can be formed using, for example, a composition containing a light absorber (hereinafter also referred to as “temporary fixing composition (II)”). The temporary fixing composition (II) usually contains a solvent.

<Light Absorbent>
Examples of light absorbers include benzotriazole-based light absorbers, hydroxyphenyltriazine-based light absorbers, benzophenone-based light absorbers, salicylic acid-based light absorbers, radiation-sensitive radical polymerization initiators, and photosensitive acid generators. Organic light absorbers such as: novolak resins such as phenol novolac and naphthol novolak; I. Pigment black 7, C.I. I. Pigment black 31, C.I. I. Pigment black 32, and C.I. I. Black pigments such as CI Pigment Black 35 (for example, carbon black); I. Pigment blue 15: 3, C.I. I. Pigment blue 15: 4, C.I. I. Pigment blue 15: 6, C.I. I. Pigment green 7, C.I. I. Pigment green 36, C.I. I. Pigment green 58, C.I. I. Pigment yellow 139, C.I. I. Pigment red 242, C.I. I. Pigment red 245, and C.I. I. Non-black pigments such as CI Pigment Red 254; I. Bat Blue 4, C.I. I. Acid Blue 40, C.I. I. Direct green 28, C.I. I. Direct green 59, C.I. I. Acid Yellow 11, C.I. I. Direct Yellow 12, C.I. I. Reactive Yellow 2, C.I. I. Acid Red 37, C.I. I. Acid Red 180, C.I. I. Acid Blue 29, C.I. I. Direct Red 28, and C.I. I. And dyes such as Direct Red 83.

  Among these, a novolac resin or a black pigment is preferable because the separation property of the object from the support is improved. In the present invention, carbon black dispersions such as MHI black # 201, # 209, # 220, and # 273 (all manufactured by Mikuku Dye Co., Ltd.) can be used as the black pigment, in addition to carbon black alone.

  The content of the light absorber is usually 1% by mass or more, preferably 10% by mass, based on 100% by mass of the solid content of the temporary fixing composition (II) and / or 100% by mass of the light absorbing layer (II) The content is more preferably 20% by mass or more. Here, "solid content" refers to all components other than the solvent. When the content ratio of the light absorber is within the above range, it is preferable from the viewpoint of the separation of the object from the support.

<Other ingredients>
The composition for temporary fixation (II) is, if necessary, a thermally degradable resin, an antioxidant, a polymerization inhibitor, an adhesion assistant, a surfactant, a crosslinking agent, a crosslinking accelerator, a photoacid generator, a polystyrene crosslinking agent. It may contain at least one selected from particles and metal oxide particles.

[Production of temporary fixing composition (I) and temporary fixing composition (II)]
The temporary fixing composition (I) and the temporary fixing composition (II) are known devices used for processing of the resin composition as needed, such as a twin-screw extruder, a single-screw extruder, a continuous kneader, a roll It can manufacture by mixing each component using a kneader, a pressure kneader, and a Banbury mixer. In addition, for the purpose of removing foreign matter, filtration can be appropriately performed.

  The temporary fixing composition (I) and the temporary fixing composition (II) can contain a solvent in order to set the viscosity in a range suitable for coating. As the solvent, for example, xylene, limonene, 1,3,5-trimethylbenzene, dipentene, pinene, bicyclohexyl, cyclododecene, 1-tert-butyl-3,5-dimethylbenzene, butylcyclohexane, cyclooctane, cycloheptane, Hydrocarbon solvents such as cyclohexane and methylcyclohexane; alcohol or ether solvents such as anisole, propylene glycol monomethyl ether, dipropylene glycol methyl ether, diethylene glycol monoethyl ether and diglyme; ethylene carbonate, ethyl acetate, butyl acetate, ethyl lactate, 3- Esters or lactates such as ethyl ethoxypropionate, methoxypropyl acetate, diethylene glycol monoethyl ether acetate, propylene carbonate, γ-butyrolactone Solvent; cyclopentanone, cyclohexanone, methyl isobutyl ketone, ketone solvents such as 2-heptanone; amide or lactam solvents such as N- methyl-2-pyrrolidinone.

  The temporary fixing composition (I) and the temporary fixing composition (II) containing a solvent make it easy to adjust their viscosity, and thus form a temporary fixing material on a target or a support. Becomes easy. For example, in the solvent, the solid content concentration of the composition for temporary fixation (I) and the composition for temporary fixation (II) is usually 5 to 70% by mass, preferably 5 to 50% by mass. Can be used in Here, the “solid content concentration” is the total concentration of all components other than the solvent.

[Processing method of processing object]
The processing method of the processing object of the present invention comprises (1) forming the laminate, wherein the processing object is held on the temporary fixing material, and (2) processing the processing object And / or moving the laminate, and (3) separating the object to be processed from the support.

<Step (1)>
In the step (1), for example, the temporary fixing material is formed on the surface of the support and / or the object to be treated, and the object and the support are pasted to each other via the temporary fixing material. Temporarily fixed on the support. Further, the temporary fixing material is formed on the surface of the support, and an object such as a resin coating film or a wiring layer is formed on the temporary fixing material to temporarily fix the processing object on the support. Can. The object to be treated can be surface-treated as necessary.

  As a method of forming the above-mentioned temporary fixing material, for example, a method of directly forming each layer of the temporary fixing material on a support and / or an object using a temporary fixing composition, a mold release treatment is performed After forming a film with a fixed film thickness using the composition for temporary fixing on the film, a method of transferring each layer to a support and / or an object by a lamination method may be mentioned. From the viewpoint of film thickness uniformity, the method of direct formation is preferable.

  When the temporary fixing material is formed on the support or the object, the surface of the object can be preliminarily treated in order to make the temporary fixing material spread in the plane. Examples of the surface treatment method include a method in which a surface treatment agent is applied to the surface of an object in advance. Examples of the surface treatment agent include a coupling agent such as a silane coupling agent.

  Examples of the method for applying the temporary fixing composition (I) and the temporary fixing composition (II) include a spin coating method and an ink jet method. After applying the temporary fixing composition (I) or the temporary fixing composition (II) to form a coating film, the layer (I) or light is formed by heating as necessary to evaporate the solvent. The absorption layer (II) is formed. The heating conditions are appropriately determined according to the boiling point of the solvent, and for example, the heating temperature is usually 100 to 350 ° C., and the heating time is usually 1 to 60 minutes.

  The pressure bonding condition between the object and the support via the temporary fixing material is, for example, preferably 5 to 400 ° C., more preferably 150 to 400 ° C. for 1 to 20 minutes, and laminating each layer with a pressure of 0.01 to 100 MPa. It does by adding to the direction. For example, when the object has a solder bump or the like and there is a problem in bonding the object and the support at a high temperature, the pressure bonding can be performed at 220 ° C. or lower. After the pressure bonding, heat treatment can be further performed at 150 to 300 ° C. for 10 minutes to 3 hours. The pressure bonding can also be performed under vacuum. In this way, the object is firmly held on the support via the temporary fixing material.

  Examples of the object include semiconductor wafers, semiconductor chips, glass substrates, resin substrates, metal substrates, metal foils, polishing pads, resin coating films, and wiring layers. In the semiconductor wafer and the semiconductor chip, at least one selected from bumps, wirings, through holes, through hole vias, insulating films, and various elements can be formed. Various elements can be formed or mounted on the substrate. Examples of the resin coating film include a layer containing an organic component as a main component; specifically, a photosensitive resin layer formed of a photosensitive material, an insulating resin layer formed of an insulating material, The photosensitive insulating resin layer formed from a photosensitive insulating resin material is mentioned.

  The support is preferably a substrate transparent to the light used for light irradiation, since it is preferable that the light absorption layer (II) is degraded by light irradiation from the support side in step (3), for example, glass A substrate, a quartz substrate, and a transparent resin substrate can be mentioned.

<Step (2)>
Step (2) is a step of processing the object temporarily fixed on the support and / or moving the obtained laminate. The moving step is a step of moving an object such as a semiconductor wafer from one apparatus to another together with a support. Examples of processing of the object temporarily fixed on the support include dicing of the object, thinning of the object (backside grinding, etc.), photofabrication, stacking of semiconductor wafers or chips, mounting of various elements, Resin sealing is mentioned. The photofabrication includes, for example, one or more processes selected from resist pattern formation, etching, sputtered film formation, and plating. The lamination and mounting can be performed, for example, by plating and solder reflow. The etching process and the formation of the sputtered film are performed, for example, in a temperature range of about 25 to 300 ° C. The plating process and the solder reflow process are performed, for example, in a temperature range of about 225 to 300 ° C. The processing of the object is not particularly limited as long as the holding power of the temporary fixing material is not lost.
In the present invention, the layer (I) maintains a high melt viscosity even at high temperature processing of, for example, 200 ° C. or higher, so that the object to be treated can be favorably held on the support.

<Step (3)>
After processing of the object or transfer of the laminate, in step (3) the object is separated from the support. As a method of separating an object and a support, for example, a method of applying a force to an object or a support in a direction parallel to the support surface or the object surface to separate them; one of the object and the support Is fixed, and the other is separated at an angle from the parallel direction with respect to the support surface or the object surface to separate the two.

  In the former method, by sliding the object horizontally relative to the surface of the support, at the same time fixing the support or applying a force to the support that counteracts the force applied to the object. And methods of separating the support and the object.

  In the latter method, it is preferable to apply a force in a direction substantially perpendicular to the support surface or the object surface to separate the support and the object. “Applying a force in a direction substantially perpendicular to the support surface or the object surface” means that the z axis, which is an axis perpendicular to the support surface or the object surface, is usually 0 ° to 60 °. Range, preferably in the range of 0 ° to 45 °, more preferably in the range of 0 ° to 30 °, still more preferably in the range of 0 ° to 5 °, particularly preferably 0 °, ie relative to the support surface or the object surface It means applying force in the vertical direction. As a separation method, for example, a method of lifting the periphery of an object or a support and peeling off sequentially from the periphery toward the center while applying a force in a direction substantially perpendicular to the support surface or the object surface (hook pull method) Can be done with

  The said separation can be normally performed at 5-100 degreeC, Preferably it is 10-45 degreeC, More preferably, it is 15-30 degreeC. Moreover, when separating, in order to prevent damage to the object, a reinforcing tape, for example, a commercially available dicing tape, can be applied to the surface of the object opposite to the temporary fixing surface with the support.

  It is preferable that the temporary fixing material is irradiated with light from the support side before and / or during the separation. Specifically, the light absorbing layer (II) is irradiated with light from the support side to decompose or deteriorate the light absorbing layer (II), thereby reducing the strength and adhesion of the temporary fixing material, Preferably the object is separated from the support. After the light irradiation to the light absorption layer (II), the support can be easily separated from the object without particularly requiring the heat treatment of the temporary fixing material.

  It is preferable to use an ultraviolet ray for light irradiation, for example, an ultraviolet ray having a wavelength of 10 to 400 nm is employed, and an ultraviolet ray having a wavelength of 300 to 400 nm is particularly preferable. Examples of the light source of irradiation light include a low-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, and a laser. Among these, a laser is preferable. It is preferable to irradiate the entire surface of the light absorption layer (II) while scanning with a laser from the support side, and it is more preferable to irradiate the laser on the light absorption layer (II) with a focus.

  Examples of the laser include a solid laser (eg, an all solid laser using a photoexcited semiconductor laser, a YAG laser), a liquid laser (eg, a dye laser), and a gas laser (eg, an excimer laser). Among these, an all-solid-state laser (wavelength: 355 nm), a YAG laser (wavelength: 355 nm), and an excimer laser using a photoexcited semiconductor laser are preferable.

The conditions for light irradiation vary depending on the type of light source etc., but in the case of an all-solid-state laser using a photoexcited semiconductor laser and a YAG laser, usually 1 mW to 100 W, and the integrated light amount is usually 1.4 × 10 ^-7 to 1. 4 × 10 ⁷ mJ / cm ² .

  Subsequently, by applying a force to the object or the support, the object is separated from the support by, for example, separating the object from the support. In addition, although it is preferable to isolate | separate after finishing light irradiation, it can also isolate | separate, performing light irradiation.

<Step (4)>
When the temporary fixing material remains on the target after separation from the support, the temporary fixing material is targeted by a method such as peeling treatment of the temporary fixing material and solvent washing treatment of the temporary fixing material as step (4). It can be removed from

<One embodiment>
Below, the processing target object which has at least a wiring layer is demonstrated. In this process, a temporary fixing material is formed on a support in step (1), and an object to be treated having at least a wiring layer is first formed on the temporary fixing material, for example, as a layer independent of a semiconductor wafer or chip. Subsequently, in the step (2), at least one selected from a semiconductor wafer and a semiconductor chip is disposed on the wiring layer. The wiring layer functions as a rewiring layer of the semiconductor wafer or chip by being electrically connected to the semiconductor wafer or chip. The present invention is also applicable to the Redistribution Layer (RDL) -First structure in such a Fan-Out Wafer Level Package (FO-WLP) technology.

  The wiring layer includes, for example, an insulating portion, a wiring portion, and a connecting conductor portion that can be connected to an electrode of a semiconductor wafer or a chip. A semiconductor wafer or chip is disposed on the wiring layer, and the connecting conductor of the wiring layer and the electrode of the semiconductor wafer or chip are electrically connected by a bonding member such as solder, anisotropic conductive paste, or anisotropic conductive film. Connect to When a gap is generated between the semiconductor wafer or chip and the wiring layer, an underfill material can be filled.

  The internal structure in the wiring layer is not particularly limited. As materials for the wiring portion and the connecting conductor portion, for example, metals such as copper, gold, silver, platinum, lead, tin, nickel, cobalt, indium, rhodium, chromium, tungsten, ruthenium and the like, and two or more of them are listed. Alloys are listed. Examples of the material of the insulating portion include known synthetic resins such as polyimide resin, acrylic resin, polyether nitrile resin, polyether sulfone resin, epoxy resin, polyethylene terephthalate resin, polyethylene naphthalate resin, polyvinyl chloride resin, etc. . The thickness of the wiring layer is usually 1 to 1,000 μm.

  Subsequently, for example, the semiconductor wafer or the chip is resin-sealed in the step (2), and the temporary fixing material and the wiring layer are separated in the step (3). Can be obtained.

[Method of Manufacturing Semiconductor Device]
The semiconductor device of the present invention can be manufactured by processing the object according to the method of processing an object of the present invention. The temporary fixing material separates the semiconductor device (example: semiconductor element) obtained by processing the object from the support, and can be removed in step (4) as necessary. For this reason, in the semiconductor device of the present invention, thermal deterioration at the time of forming the laminate, deterioration due to light irradiation at the time of separation is small, and contamination such as stains and charring by the temporary fixing material is reduced.

  EXAMPLES Hereinafter, although this invention is demonstrated further more concretely based on an Example, this invention is not limited to these Examples. In the following description of Examples and the like, “part” means “part by mass” unless otherwise specified.

1. Preparation of temporary fixing composition (I) and comparative composition
Synthesis Example 1 Synthesis of non-hydrogenated random copolymer (B1) 210 g of cyclohexane and 0.2 g of tetrahydrofuran were placed in a flask and heated to 60 ° C. with stirring, and the temperature was maintained at 60 ° C. The flask was then charged with 15.7 mmol sec-BuLi. Subsequently, the liquid mixture containing 8.75 g styrene and 26.25 g isoprene was dripped at the flask over 1 hour. After completion of dropping, the mixture was heated at 60 ° C. for 1.5 hours. After heating, methanol (5 molar equivalents relative to sec-BuLi) was dropped into the flask. After the addition was completed, the contents of the flask were transferred to a separatory funnel, and the same amount of ultrapure water as the contents was added to separate the organic layer. After performing the same liquid separation three times, the solvent was distilled off from the organic layer to obtain a non-hydrogenated random copolymer (B1). The weight average molecular weight (Mw) of the non-hydrogenated random copolymer (B1) was measured by connecting GPC columns (2 G2000HXL, 1 G3000HXL, 1 G4000HXL) manufactured by Tosoh Corporation in series. The signal detected by the refractive index method under the conditions of tetrahydrofuran and a GPC column temperature of 40 ° C. using a “-8220-GPC” (manufactured by Tosoh Corp.) is measured in terms of polystyrene, Mw. Was 3,800.

[Examples 1A to 3A, Comparative Examples 1A to 5A] Preparation of Compositions 1 to 8 Various components shown in the following Table 1 were uniformly mixed to prepare Compositions 1 to 8.

表１に示す各成分の詳細は以下のとおりである。

Details of each component shown in Table 1 are as follows.

<Hydrogenated block copolymer (A) and comparative polymer>
A1: SEPTON 8007 L (product name, manufactured by Kuraray Co., Ltd., styrene block-containing hydrogenated block copolymer, content ratio of styrene unit: 30% by mass)
A2: SEPTON HG 252 (product name, manufactured by Kuraray Co., Ltd., styrene block-containing hydrogenated block copolymer, content ratio of styrene block: 28% by mass)
A3: SEPTON 8076 (product name, manufactured by Kuraray Co., Ltd., styrene block-containing hydrogenated block copolymer, content ratio of styrene block: 30% by mass)
cA4: DYNARON 8600 (product name, manufactured by JSR Corporation, styrene block-containing hydrogenated block copolymer, content ratio of styrene unit: 15% by mass)
cA5: DYNARON 8300 (product name, manufactured by JSR Corporation, styrene block-containing hydrogenated block copolymer, content ratio of styrene unit: 9% by mass)
cA6: YP-50S (product name, manufactured by Nippon Steel & Sumitomo Metal Co., Ltd., phenoxy resin)
<Non-hydrogenated random copolymer (B)>
B1: Non-hydrogenated random copolymer (B1) (Mw = 3, 800) synthesized in the above-mentioned Synthesis Example 1
B2: L-SBR-820
(Product name, manufactured by Kuraray Co., Ltd., non-hydrogenated random copolymer, Mw = 8, 500)
<Antioxidant (C)>
C1: Irganox 1010 (product name, manufactured by BASF)
<Surfactant (D)>
D1: FTX-218 (product name, manufactured by Neos Corporation)
<Solvent (E)>
E1: 1,3,5-trimethylbenzene E2: cyclohexanone

2. Preparation of composition (II) for temporary fixation
Production Example 1 Production of Composition (II-1) for Temporary Fixation 100 parts of 2,6-dihydroxynaphthalene, 100 parts of propylene glycol monomethyl ether acetate, and para were added to a reaction apparatus equipped with a condenser, a thermometer and a stirrer. 50 parts of formaldehyde (formaldehyde equivalent) was charged, 2 parts of oxalic acid were added, and the reaction solution was heated at 120 ° C. for 5 hours while being dehydrated to obtain a reaction solution.

Water was added to the reaction solution and stirred. The precipitate was collected, washed with water and dried at 50 ° C. for 17 hours to obtain 2,6-dihydroxynaphthalene / formaldehyde condensate (Mw = 1,550).
One hundred parts of the condensate were uniformly dissolved in 550 parts of a mixed solvent of cyclohexanone / methoxypropyl acetate = 60/40 (% by mass) to prepare a temporary fixing composition (II-1).

3. Evaluation Predetermined evaluation was performed about the obtained compositions 1-8. The results are shown in Table 2 below.
3-1. Melt Viscosity Measurement of Film Formed from Composition 1 to 8 The obtained composition 1 to 8 is coated on a release film with a bar coater, heated at 160 ° C. for 10 minutes, and then heated at 230 ° C. for 20 minutes, The release film was peeled off to prepare a 1 mm thick film for melt viscosity measurement.

The melt viscosity of the film for melt viscosity measurement was measured with a rheometer (device name “AR-G2”, manufactured by TA Instrument). The measurement conditions are as follows.
Angular frequency: 0.08 Hz
Temperature range: 180-250 ° C
Melt viscosity at 180 ° C, 200 ° C, and 250 ° C, melt viscosity reduction rate ((melt viscosity of 180 ° C-melt viscosity of 250 ° C) / melt viscosity of 180 ° C) × 100 calculated in Table 2 below The ratio (melt viscosity at 180 ° C./melt viscosity at 250 ° C.) is shown.

3-2. Pasteability Composition (II-1) is spin-coated onto a bonding 8-inch glass wafer, heated at 180 ° C. for 2 minutes using a hot plate, and further heated at 250 ° C. for 8 minutes A light absorption layer (II-1) having a thickness of 0.6 μm was formed.

  Subsequently, compositions 1 to 8 are spin-coated on the light absorption layer (II-1), and heated for 50 minutes at 200 ° C. for 10 minutes at 160 ° C. for 5 minutes using a hot plate to temporarily fix 50 μm thick A substrate with a temporary fixing material having layers (1) to (8) and having a temporary fixing material comprising a light absorbing layer (II-1) and temporary fixing layers (1) to (8) on an 8-inch glass wafer Prepared.

  Then, using the die bonder apparatus (apparatus name "EVG 520", manufactured by EVI Group, Inc.) via the temporary fixing material, the substrate with the temporary fixing material and the 8-inch silicon wafer were subjected to 0. 0 at a temperature of 200 ° C. A pressure of 2 MPa was applied for 5 minutes and pasted together to obtain a laminate.

The bonding state (bonding property) of the temporary fixing layer of the laminate and the 8-inch silicon wafer was observed from the 8-inch glass wafer side of the laminate, and the bonding property was evaluated. Evaluation was performed based on the following criteria.
A: No void was observed.
B: A void was observed.

3-3. Heat resistance The laminated body obtained by the above-mentioned "3-2. Bonding property " was put into a forced air circulation type clean oven, and was heated at 250 ° C for 2 hours in a nitrogen atmosphere. The state of the laminate after heating was evaluated as heat resistance. Evaluation was performed based on the following criteria.
A: The temporary fixed layer is the same as before being put into the forced air circulation type clean oven.
B: The temporary fixing layer was melted and protruded from the 8-inch glass wafer and the 8-inch silicon wafer.

DESCRIPTION OF SYMBOLS 1 ... Laminated body 10 ... Support body 20 ... Temporary fixing material 21 ... Layer (I)
22 ・ ・ ・ light absorbing layer (II)
30 ··· Processing object

Claims (13)

(1) forming a laminate having a support, a temporary fixing material, and an object to be treated;
(2) processing the object to be treated and / or moving the laminate;
(3) separating the object to be treated from the support;
The hydrogenated block copolymer (A), wherein the temporary fixing material has a structural unit (a1) derived from an aromatic compound containing a polymerizable double bond and a structural unit (a2) derived from a conjugated diene, and a polymerizable double Layer (I) formed from a composition containing a nonhydrogenated random copolymer (B) having a structural unit (b1) derived from an aromatic compound containing a bond and a structural unit (b2) derived from a conjugated diene And the content of the structural unit (a1) contained in the hydrogenated block copolymer (A) is 20% by mass or more,
In the laminate, the processing object is held on the temporary fixing material,
Processing method of the processing object.   The content of the non-hydrogenated random copolymer (B) in the composition is 0.1 to 20 parts by mass with respect to 100 parts by mass of the hydrogenated block copolymer (A). The processing method of the processing target object as described in.   The content of the structural unit (b2) in the non-hydrogenated random copolymer (B) is 30 to 100 parts by mass relative to the total content of the structural unit (b1) and the structural unit (b2) The processing method of the process target of Claim 1 or 2 which is 97 mass parts.   The processing method of the processing target object of any one of Claims 1-3 with which the said temporary fixing material further has light absorption layer (II).   The processing method of the processing target object of any one of Claims 1-4 which irradiates light to the said temporarily fixed material from the said support body side before and / or during the said isolation | separation.   The processing method of the processing target object of Claim 4 with which the said laminated body has the said each element in order of the said support body, the said light absorption layer (II), the said layer (I), and the said processing target object.   The processing method of the processing target object of any one of Claims 1-6 with which the said processing target object has a wiring layer.   The processing method of a processing target according to claim 7, wherein the processing includes disposing at least one selected from a semiconductor wafer and a semiconductor chip on the wiring layer. A hydrogenated block copolymer (A) having a structural unit (a1) derived from an aromatic compound containing a polymerizable double bond and a structural unit (a2) derived from a conjugated diene, and an aromatic compound containing a polymerizable double bond And a non-hydrogenated random copolymer (B) having a structural unit derived from (b1) and a structural unit derived from a conjugated diene (b2),
The content ratio of the structural unit (a1) contained in the hydrogenated block copolymer (A) is 20% by mass or more.
Composition.   The composition according to claim 9, wherein the content of the non-hydrogenated random copolymer (B) is 0.1 to 20 parts by mass with respect to 100 parts by mass of the hydrogenated block copolymer (A). .   The content of the structural unit (b2) in the non-hydrogenated random copolymer (B) is 30 to 100 parts by mass relative to the total content of the structural unit (b1) and the structural unit (b2) The composition according to claim 9 or 10, which is 97 parts by mass.   The manufacturing method of a semiconductor device which processes a processing target object with the processing method of the processing target object of any one of Claims 1-8, and manufactures a semiconductor device. (1a) forming a laminate having a support, a temporary fixing material, and a wiring layer;
(2a) a step including disposing at least one selected from a semiconductor wafer and a semiconductor chip on the wiring layer;
(3a) separating the wiring layer from the support,
The hydrogenated block copolymer (A), wherein the temporary fixing material has a structural unit (a1) derived from an aromatic compound containing a polymerizable double bond and a structural unit (a2) derived from a conjugated diene, and a polymerizable double Layer (I) formed from a composition containing a nonhydrogenated random copolymer (B) having a structural unit (b1) derived from an aromatic compound containing a bond and a structural unit (b2) derived from a conjugated diene And the content of the structural unit (a1) contained in the hydrogenated block copolymer (A) is 20% by mass or more,
In the laminate, the wiring layer is held on the temporary fixing material.
A method for manufacturing a semiconductor device.

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