JP2019119618A - Metho for evaluating silica glass crucible, silica glass crucible, apparatus for pulling silicon single crystal and method for manufacturing silicon single crystal - Google Patents

Abstract

To measure the glass structure of a silica glass crucible in a nondestructive manner to highly accurately determine the silica glass crucible capable of preventing dislocation from occurring when pulling a silicon single crystal.SOLUTION: The method for evaluating a silica glass crucible having a crystal layer provided on the inner surface side and having silica glass crystallized by a mineralizer and a non-crystal layer contacting the crystal layer after pulling a silicon single crystal comprises the steps of: acquiring a first Raman spectrum served as a Raman spectrum on the surface of the crystal layer; acquiring a second Raman spectrum served as a Raman spectrum on the side of the crystal layer on an interface between the crystal layer and the non-crystal layer; acquiring a third Raman spectrum served as a Raman spectrum on the side of the non-crystal layer on the interface between the crystal layer and the non-crystal layer; and determining the quality of the silica glass crucible on the basis of the first Raman spectrum, the second Raman spectrum and the third Raman spectrum.SELECTED DRAWING: Figure 9

Description

  The present invention relates to a method of evaluating a silica glass crucible, a silica glass crucible, a silicon single crystal pulling apparatus, and a method of producing a silicon single crystal.

  In order to pull up a silicon single crystal with a diameter of 300 mm or more, the diameter of the silica glass crucible has been increased to 32 inches (about 81.3 cm) or more and the thickness of the wall portion has been 10 mm or more. One of the methods for producing this silica glass crucible is a rotary molding method. The rotational molding method is a silica powder layer forming step of depositing a silica powder having an average particle diameter of about 100 μm to about 400 μm on the inside of a rotating carbon mold using centrifugal force to form a silica powder layer, and silica powder from the mold side. Forming a silica glass layer by arc melting the silica powder layer while depressurizing the layer. Then, the upper end face of the crucible molded body formed by arc melting is cut to complete a silica glass crucible of a predetermined size.

  At the beginning of the arc melting step, the entire outermost surface of the silica powder layer is vitrified thinly to form a so-called seal layer, after which the bubbles are removed by strongly depressurizing to remove the transparent silica glass layer (hereinafter referred to as "transparent layer" (Hereinafter referred to as "non-transparent layer") in which air bubbles are left by weakening the reduced pressure. Thereby, a silica glass crucible having, for example, a two-layer structure having a transparent layer on the inner surface side and a non-transparent layer on the outer surface side is formed.

  Natural silica powder is produced by crushing natural silica and then refining it to remove impurities, and grinding it with a purity of 99% or more. And synthetic silica powder (glass) produced by chemical synthesis. Among these, natural silica powder is a natural product, so that physical properties, shape and size are likely to vary. When the physical properties, shape, and size of the silica powder change, the molten state of the silica powder changes.

  That is, at the time of arc melting, the silica powder is sintered first, and after volume diffusion, the temperature rises further to eliminate grain boundaries, and the entire crucible is vitrified to form a Si-O-Si network structure. The rate of sintering and the rate of vitrification change. Specifically, for example, when the size of the silica powder is small or the surface area is large even with the same volume, the sintering speed and the vitrification speed become high. When the silica powder is small, the space between the adjacent silica powders is also small, and sintering and vitrification proceed faster than the rate of removing bubbles at reduced pressure, so the bubbles in the produced glass crucible are small and many Become. Thus, the molecular structure of the glass after arc melting and the contained bubbles change depending on the sintering speed and the vitrification speed.

  Therefore, even if arc melting is performed under the same conditions, the shape of the crucible to be produced, the roundness of the inner diameter and outer shape, the thickness of the transparent layer and the nontransparent layer, the interface between the transparent layer and the nontransparent layer Variations may occur in the degree of circularity (waves in the vertical direction) and the like.

  In a 32 inch (about 81.3 cm) diameter silica glass crucible used for crystal pulling for 300 mm silicon wafers, the thickness of the transparent layer is about 1 mm to 10 mm or less, and the thickness of the non-transparent layer is about It is about 5 mm or more and 50 mm or less. As the diameter of the silica glass crucible increases, the above-mentioned variation appears more prominently.

  In addition, since arc melting is performed with a large power of AC three phases, it is difficult to continue stable discharge. If the temperature and cooling rate at the time of arc melting change, the silica melting and vitrification rates will not be uniform, and the glass structure of the manufactured silica glass crucible will also change.

  After the arc melting step, the molten silica glass is solidified through a cooling step. In this cooling step, a method of bonding silicon and oxygen (for example, a six-membered ring, an eight-membered ring) or a void between atoms in a bonding structure of silicon and oxygen by a cooling method such as a cooling rate or spraying of a cooling gas. The size changes. For example, when the proportion of the structure having a large member ring such as an 8-membered ring increases, the number of voids also increases. As described above, since the bonding state of the material atoms changes in a complex manner depending on various conditions such as the melting step and the cooling step in the manufacture of the crucible, the distribution of internal residual stress after cooling of the silica glass crucible changes, and the strength of the crucible It will affect (the deformation during CZ pulling up). For example, in the pulling apparatus 500 shown in FIG. 26, if the crucible CR is deformed during CZ pulling, the crucible CR contacts the heat shielding member 570 protecting the silicon single crystal 25, and the pulling apparatus 500 or the crucible CR may be damaged. There is no way to stop pulling.

  Furthermore, in the rotational molding method, in the silica powder layer forming step of depositing the silica powder layer inside the carbon mold, the carbon mold is mounted on the rotating table, and the silica powder is supplied to the inside of the carbon mold rotating with the rotating table. , Deposit and scrape with a scraper to adjust the thickness of the silica powder layer. Among these operations, in the process of mounting the carbon mold on the rotating table, it is necessary to adjust the rotating shaft to align the central axis of the carbon mold with the central axis of the rotating table. The adjustment of the rotation axis is performed by the operator finely adjusting the mounting position of the heavy carbon mold. In the step of supplying the silica powder, the operator adjusts the amount, position and timing of supplying the silica powder in accordance with the rotation of the carbon mold. Furthermore, in the thickness adjustment by the scraper, the operator adjusts the degree of application such as the angle and strength of the scraper in accordance with the rotation of the carbon mold. As described above, there are many parts that rely on the manual experience and intuition of the worker such as adjustment of the rotation axis, supply of silica powder, and thickness adjustment of the silica powder layer using a scraper. For this reason, the thickness of the silica powder is not always uniform, and the thickness of the silica glass crucible and the thickness of the inner layer are not necessarily uniform. If the thickness of the layer inside the silica glass crucible changes, the heat conduction will change, and the glass structure of the silica glass crucible after production will also change.

  In order to pull up a silicon single crystal using the silica glass crucible manufactured in this way, the silica glass crucible is housed in the carbon susceptor of the pulling apparatus, and polysilicon is introduced into the silica glass crucible. Then, it is melted by the heat of the heater from the outside of the carbon susceptor, and after the seed crystal is deposited on the melt surface, the single crystal is pulled up.

  Since the melting point of silicon is 1410 ° C, the temperature of the silicon melt in the silica glass crucible is 1410 ° C or more, and the temperature of the crucible holding the silicon melt is higher than that (1700 ° C or more for large diameter crystals) Become. Furthermore, the time to pull the single crystal is also long, over 100 hours. Under such an environment requiring a long time at such a high temperature, the viscosity of the silica glass becomes low, and it is difficult to maintain the shape of the silica glass crucible.

  The layer outside the silica glass crucible needs a layer (non-transparent layer) containing air bubbles that scatter heat so that the heat of the heater of the pulling device can not be transmitted when pulling up the silicon single crystal. On the other hand, the inner wall surface of the silica glass crucible is required to have high purity to prevent contamination of the silicon melt. Therefore, the inner surface of the silica glass crucible is formed of synthetic silica powder. The impurity concentration is 10 ppb or less. In addition, if there are air bubbles on the inner wall surface of the silica glass crucible, the heat when pulling up the silicon single crystal may cause expansion of the air bubble as a starting point, crystallization, peeling of the crucible wall, etc. and inhibition of silicon single crystallization. Will occur. For this reason, the inner wall surface of the silica glass crucible is a non-bubble layer (transparent layer).

  When pulling up a silicon single crystal, the inner surface of the silica glass crucible is in contact with the high temperature silicon melt for a long time. On the inner surface of the silica glass crucible in contact with the silicon melt, polycrystalline cristobalite, which is a variant thereof, is formed from the silica glass structure. Cristobalite spreads on the inner surface of the silica glass crucible as time passes during pulling of the silicon single crystal, and partially grows in the direction of the inner wall, leading to the formation of brown ring which is a brown ring-like spot. The once grown polycrystalline cristobalite does not undergo phase transformation to silica glass during CZ silicon single crystal growth.

  The generated cristobalite is easily exfoliated from the inner surface of the silica glass crucible. When exfoliated cristobalite is mixed in the silicon melt, if it is taken into the silicon single crystal as it is, dislocation occurs or polycrystallizes from that point (see Patent Document 1).

  Patent Document 2 discloses a method of producing a silicon single crystal which suppresses dislocation formation caused by cristobalite. In this manufacturing method, after the raw material melting step and before the pulling step, while applying a magnetic field, a cristobalite forming step of generating cristobalite on the surface of the crucible by leaving it at a predetermined crucible rotation number, gas flow rate and furnace internal pressure; From the cristobalite forming step, a melting step is performed in which cristobalite is partially melted by performing at least one of speeding up of the number of rotations of the crucible, increase of the gas flow rate, and lowering of the furnace internal pressure.

In Patent Document 3, as a method of growing good-quality dislocation-free single crystals, the diameter of crystalline SiO ₂ grains is 40 μm or less among the crystalline SiO ₂ grains formed on the inner surface of a quartz crucible after pulling single crystals. Disclosed is a single crystal growth method using a quartz crucible in which the number of one is 80% or more of the total number of crystalline SiO ₂ particles.

  Patent Document 4 discloses that a quartz glass crucible is produced as a quartz glass crucible that suppresses the progress of cristobalite formation, and then the crystal phase of silica present in the outer layer portion of the produced quartz glass crucible is removed.

  Patent Document 5 describes that when cristobalite is exfoliated from a quartz crucible, dislocation of silicon single crystal is caused. That is, because the size of cristobalite is relatively large, it is often described that the solid-liquid interface of silicon single crystal is reached before melting in the raw material melt, which causes dislocation of silicon single crystal. .

  A magnetic field is applied to the raw material melt and left to stand in the ripening step to prevent dislocation formation, and then the application of the magnetic field to the raw material melt is stopped and the raw material melt is left to reform the quartz crucible In the method (see Patent Document 6) or in the ripening step, the heater and the crucible are relatively moved up and down, and the entire raw material melt in the crucible is uniformly heated, so that the remaining dissolution of the dopant etc. in the raw material melt It is disclosed that the dissolution of copper and the deterioration of the surface of the crucible be made uniform (see Patent Document 7).

  However, even with these methods, since there may be dislocations, in the method of producing a silicon single crystal described in Patent Document 5, the length of the heat generating portion of the heater is determined by the initial raw material melting in the quartz crucible at the start of the growth step. The distance between the liquid level position (initial ML) and the end raw material melt surface position (end ML) in the quartz crucible at the end of the growth step is shorter than the distance between the liquid level position (initial ML) and the end raw material melt surface position (end ML). Further, in the ripening step in this manufacturing method, the first ripening step in which the raw material melt is left while applying a magnetic field to the raw material melt, and then the application of the magnetic field to the raw material melt is stopped and the raw material melt is left And a second ripening step. Then, move the heater up and down relative to the quartz crucible so that the moving range of the heat generating part of the heater is at least the area from the initial ML to the end ML in the first ripening step and the second ripening step. I'm going.

  Here, the viscosity of the silica glass crucible depends on the heat history such as the temperature of arc melting and the cooling rate. If the heat history changes, the virtual temperature of the glass also changes (see Non-Patent Document 1). The fictive temperature is correlated with the glass structure (see Non-Patent Document 2). In addition, the generation of cristobalite also depends on the glass structure of the inner surface.

  The glass structure such as the content ratio of multi-membered rings in the glass can be estimated by measuring the Raman shift. In the measurement of the Raman shift, the content ratio of the multi-membered ring in the glass can be measured, and the generation of cristobalite can be predicted from the result (see Patent Document 8).

  However, in the measurement of the Raman shift, it is necessary to fit the measurement sample in a closed space so that the laser light which is the excitation light does not leak and the light from the outside is not affected. Therefore, only a glass piece having a sample size of about 10 cm × 10 cm at maximum can be measured. In the conventional measurement, the measurement of the Raman shift is performed on the sample piece cut out from the rim portion of the crucible (see Patent Document 8).

  Although one silicon single crystal can be pulled from one silica glass crucible, in recent years, pulling up of a plurality of silicon single crystals has also been performed. According to Patent Document 9, in the standing step of growing the first silicon single crystal, after applying a magnetic field to the silicon melt and leaving it to stand, the first silicon single crystal is grown, and the second silicon single crystal is grown. In the method of producing a silicon single crystal, the leaving condition is determined based on whether or not remelting is performed when growing the first silicon single crystal in the leaving step in growing the first silicon single crystal, and the silicon single crystal is left to stand. Disclosed.

  Patent Document 10 discloses that when producing a plurality of silicon single crystals with the same quartz crucible, the inner surface of the quartz crucible is likely to be locally damaged at the liquid level position of the initial raw material melt. That is, when the silicon single crystal is repeatedly grown, if the liquid level position of the initial raw material melt on the inner surface of the quartz crucible matches, the damage at the crucible wall portion of the inner surface and the silicon melt interface significantly progresses. Due to this damage, dislocation formation significantly occurs in the seed necking step of a single crystal. Therefore, as the silicon single crystal is repeatedly pulled up, the liquid level position of the raw material melt in the quartz crucible before the start of pulling is lower than the liquid level position before the start of pulling in the single crystal pulling performed just before. It has changed.

JP 2005-231986 A International Publication No. 2013/004903 JP 2001-240494 A JP, 2011-140410, A JP, 2016-132580, A JP, 2012-082121, A JP, 2010-208908, A JP, 2013-142047, A JP, 2013-151385, A Unexamined-Japanese-Patent No. 2010-018506

Res. Reports Asahi Glass Co., Ltd., 59 (2009) NEW GLASS Vol. 27 No. 105, (2012)

  In the arc melting step in manufacturing the silica glass crucible, the positional relationship between the distance between each portion (rim, wall, corner, bottom) of the silica glass crucible and the arc is different. The crucible wall and the like around the arc electrode are heated by radiant heat. In addition, the crucible bottom just below the arc electrode is directly heated by the plasma jet flow by the discharge. As described above, if the distance to the arc and the type of heat transfer are different, the heat history of each part of the manufactured silica glass crucible is also different, so that the structure of each glass (for example, the structure and ratio of the three-membered ring And Si-O-Si bond angles) are also different.

  When it is going to measure the glass structure of a silica glass crucible, the sample part cut out from the rim part is measured using the rim part which arose when the upper end surface of the crucible molded body was cut (rim cut). However, the glass structure of the rim to be measured is different from the glass structure of the wall, corner and bottom of the silica glass crucible actually used for pulling. Therefore, even if the silica glass crucible is evaluated with the sample of the rim portion, there arises a problem that the occurrence of dislocation of the silicon single crystal to be pulled up and the correlation with the deformation of the silica glass crucible can not be taken.

  Further, even with a silica glass crucible manufactured under the same conditions, since the arc discharge is a discharge phenomenon similar to lightning and has a high current, the glass structures are different from each other due to the difficulty in controlling the manufacturing conditions. However, in the prior art, in order to measure the silica glass crucible used for actual pulling, it is necessary to cut out and measure a sample from each place of the crucible, and if it has been cut out, the silica glass crucible is made of silicon single crystal. It can not be used for pulling up. Also, conventionally, evaluation is based on samples, and it is difficult to accurately determine each product (crucible) actually used for pulling a silicon single crystal.

  The present invention nondestructively measures the glass structure of a silica glass crucible which actually pulls a silicon single crystal, and determines with high precision the silica glass crucible which can suppress the occurrence of dislocations when pulling a silicon single crystal. The purpose is

In order to solve the above problems, the present inventors have created a crucible measuring device, a method of evaluating a silica glass crucible, a silica glass crucible, a pulling apparatus of silicon single crystal, and a method of manufacturing silicon single crystal.
Here, the silica glass crucible includes a cylindrical side wall portion, a curved bottom portion, and a corner portion provided between the side wall portion and the bottom portion and having a curvature higher than the curvature of the bottom portion.

  The crucible measuring apparatus is provided in a light shielding portion provided so as to cover the entire silica glass crucible to be measured, a light emitting portion provided in the light shielding portion, and emitting a laser beam toward the silica glass crucible, and provided in the light shielding portion And a light receiving unit for receiving the Raman scattered light of the laser light emitted from the light emitting unit at the silica glass crucible, and an operation unit for obtaining a Raman spectrum from the Raman scattered light received at the light receiving unit.

The evaluation method of a silica glass crucible is provided on the inner surface side after pulling up a silicon single crystal, and a crystal layer formed by crystallization of silica glass by a mineralizer and a non-crystal layer in contact with the crystal layer are formed. Method to evaluate the silica glass crucible to be
The evaluation method of the silica glass crucible includes a step of acquiring a first Raman spectrum which is a Raman spectrum of the surface of the crystalline layer, and a second Raman which is a Raman spectrum of the crystalline layer side at the interface between the crystalline layer and the noncrystalline layer. Acquiring a spectrum, acquiring a third Raman spectrum which is a Raman spectrum on the non-crystal layer side at the interface between the crystal layer and the non-crystal layer, and a first Raman spectrum, a second Raman spectrum and a third Raman spectrum Determining the quality of the silica glass crucible based on the above.

  Another evaluation method of the silica glass crucible is a step of acquiring a before-use Raman spectrum which is a Raman spectrum before pulling up the silicon single crystal about the silica glass crucible to be measured, and pulling up the silicon single crystal about the silica glass crucible And acquiring the after-use Raman spectrum, which is the Raman spectrum after performing, and evaluating the silica glass crucible based on the transition from the before-use Raman spectrum to the after-use Raman spectrum.

  Another evaluation method of the silica glass crucible is a crystal layer provided on the inner surface side of the silica glass crucible after pulling the silicon single crystal using the silica glass crucible, and the silica glass being crystallized by the mineralizer, A method of evaluating a silica glass crucible in which an amorphous layer in contact with a crystalline layer is formed, the method comprising: acquiring a first Raman spectrum that is a Raman spectrum of the surface of the crystalline layer; and an interface between the crystalline layer and the amorphous layer. Acquiring a second Raman spectrum that is a Raman spectrum on the crystal layer side in the step of acquiring a third Raman spectrum that is a Raman spectrum on the non-crystal layer side at the interface between the crystal layer and the non-crystal layer; The absence of Raman shift peaks due to the mineralizer in the Raman spectrum, and the lama due to the mineralizer in the second Raman spectrum Comprising a step of determining the quality of the silica glass crucible by the peak shift is present, the.

The silica glass crucible is determined to be non-defective based on the Raman spectrum by the above-mentioned crucible measuring apparatus or the above-mentioned evaluation method.
Moreover, the silica glass crucible is evaluated by the said other evaluation method.
Further, the silica glass crucible is a silica glass crucible provided with cristobalite on the inner surface after pulling up a silicon single crystal, and a plurality of brown rings are formed after pulling up the n-th time (n is a natural number) of silicon single crystal. The plurality of brown rings are connected and integrated after the n + 1-th pulling of the silicon single crystal.

  The pulling apparatus of silicon single crystal is a glass glass crucible evaluated by the above-mentioned crucible measuring apparatus or the above evaluation method, and the shape of the glass of the outer layer under an environment exceeding the glass transition temperature of the silica glass covering the outside of the silica glass crucible. A susceptor for supporting the When the glass transition temperature is exceeded, the silica glass crucible itself can not stand on its side with the opening up, and deforms, and becomes a shape such as buckling or sinking, inward collapse, and the like. The method of producing a silicon single crystal includes the steps of: injecting a silicon material into a silica glass crucible judged to be a non-defective item by the above-mentioned crucible measuring apparatus or the above-mentioned evaluation method and melting the silicon material; And, pulling the silicon single crystal from the liquid.

(A) And (b) is a schematic diagram which illustrates a silica glass crucible. It is a flowchart which shows the manufacturing process of a silica glass crucible roughly. (A) And (b) is a schematic diagram for demonstrating the manufacturing method of a silica glass crucible. (A) And (b) is a schematic diagram for demonstrating the manufacturing method of a silica glass crucible. It is a schematic diagram which illustrates the measuring device of a silica glass crucible. It is a schematic diagram which illustrates the robot arm type crucible measuring system to which a crucible measuring device is applied. (A) And (b) is a schematic diagram which illustrates the crucible measuring method by a robot arm type crucible measuring system. (A) And (b) is a schematic diagram explaining a measurement area | region. The example of the Raman spectrum after use of the silica glass crucible apply | coated barium as a mineralizer is shown. The example of the Raman spectrum after use of the silica glass crucible apply | coated barium as a mineralizer is shown. The example of the Raman spectrum after use of the silica glass crucible apply | coated barium as a mineralizer is shown. It is a figure which shows an example of the Raman spectrum of a silica glass crucible. (A) And (b) is a figure which shows transition of a Raman shift before and behind use. It is a figure which shows transition of a Raman shift before and behind use. It is a figure which shows the relationship between the number of continuous use of a crucible, and an enabling rate. (A)-(d) is a figure which shows the result of having measured the Raman shift (D1, D2) of the silica glass crucible of 1st sample. (A)-(d) is a figure which shows the result of having measured the Raman shift (D1, D2) of the silica glass crucible of a 2nd sample. It is a schematic diagram illustrated about a Brown ring. It is a figure which shows the example of the Raman spectrum in each sample of a silica glass crucible. It is a figure which shows the example of the Raman spectrum in each sample of a silica glass crucible. It is a figure which shows the example of the Raman spectrum in each sample of a silica glass crucible. It is a figure which shows the example of the Raman spectrum in each sample of a silica glass crucible. It is a figure which shows the example of the Raman spectrum in each sample of a silica glass crucible. It is a figure which shows time until the whole inner surface of a silica glass crucible is covered with a brown ring. It is a schematic diagram which illustrates a dip test and a light heating furnace test. It is a schematic diagram which shows the whole structure of a pulling-up apparatus. (A)-(c) is a schematic diagram explaining the manufacturing method of a silicon single crystal.

  Hereinafter, embodiments of the present invention will be described based on the drawings. In the following description, the same members are denoted by the same reference numerals, and the description of the members once described will be omitted as appropriate.

<Silica glass crucible>
FIGS. 1A and 1B are schematic views illustrating a silica glass crucible.
The perspective view of the silica glass crucible 11 is shown by FIG. 1 (a), and the sectional view of the silica glass crucible 11 is shown by FIG. 1 (b).
The silica glass crucible 11 to be measured has a mortar shape including a corner 11c having a relatively high curvature, a cylindrical side wall 11a having an edge opened on the upper surface, and a straight line or a curve having a relatively low curvature. And the bottom 11b of the

  In the present embodiment, the corner portion 11c is a portion connecting the side wall portion 11a and the bottom portion 11b, and the tangent line of the curve of the corner portion 11c overlaps the side wall portion 11a of the silica glass crucible 11. It means the part up to the point it has. In other words, the point at which the side wall 11a of the silica glass crucible 11 begins to bend is the boundary between the side wall 11a and the corner 11c. Furthermore, the bottom 11b of the silica glass crucible 11 has a substantially constant curvature at the bottom 11b, and the curvature starts to change when the distance from the center of the bottom of the silica glass crucible 11 increases. It is a boundary with the corner portion 11c.

  A transparent layer 13 is provided on the inner surface side in the thickness direction of the silica glass crucible 11 (also referred to as a thickness direction), and a non-transparent layer 15 is provided on the outer surface side.

  The transparent layer 13 is a layer substantially free of air bubbles. Here, "substantially free of bubbles" means a bubble content rate and a bubble size such that the single crystallization rate of the silicon single crystal does not decrease due to the bubbles. For example, the bubble content of the transparent layer 13 is 0.1% or less, and the average diameter of the bubbles is 100 μm or less.

  The transparent layer 13 preferably contains synthetic silica glass on the inner surface side. The synthetic silica glass means, for example, a silica glass produced by melting a raw material synthesized by hydrolysis of silicon alkoxide. In general, synthetic silica has a characteristic that the concentration of metal impurities is lower than that of natural silica. For example, the content of each metal impurity contained in the synthetic silica is less than 0.05 ppm. However, since synthetic silica to which metal impurities such as Al are added is also known, it is not to be judged based on one factor whether synthetic silica or not, and it is comprehensively based on a plurality of factors. It should be judged. As described above, since synthetic silica glass has fewer impurities than natural silica glass, it is possible to prevent an increase in impurities that adversely affect the operation characteristics as a silicon semiconductor wafer that elutes from the crucible into the silicon melt. The quality of single crystals can be enhanced.

  A large number of air bubbles are inherent in the nontransparent layer 15. The non-transparent layer 15 is a layer that appears to be turbid due to the air bubbles. The nontransparent layer 15 is preferably made of natural silica glass. Natural silica glass means silica glass produced by melting natural materials such as natural quartz and quartzite. In general, natural silica has a characteristic that the concentration of metal impurities is higher than synthetic silica. For example, the content of Al contained in natural silica is 1 ppm or more, and the content of alkali metals (Na, K and Li) is 0.1 ppm or more.

  In addition, it should not be judged based on one factor whether it is natural silica, but should be judged comprehensively based on a several factor. Natural silica has high viscosity at high temperatures compared to synthetic silica, and thus can increase the heat resistance strength of the entire crucible. In addition, natural raw materials are less expensive than synthetic silica and are advantageous in cost.

  In large crucibles with an outer diameter of 32 inches or more for the silica glass crucible 11 and super large crucibles with a diameter of 40 inches or more, variation in silica powder layer formation at the time of producing the crucible (thickness of silica powder layer, rotation of carbon mold Variations in axis alignment etc.) and differences in the glass structure due to variations in the heat history in the arc melting step appear prominently. The difference in the glass structure has a large influence on the quality of single crystals, such as the formation of cristobalite at the time of pulling a silicon single crystal and the generation of dislocations in a silicon single crystal.

<Method of manufacturing silica glass crucible>
FIG. 2 is a flow chart schematically showing a production process of a silica glass crucible. Moreover, FIG.3 and FIG.4 is a schematic diagram for demonstrating the manufacturing method of a silica glass crucible.
The silica glass crucible 11 is manufactured by a rotational molding method. As shown in FIG. 4, in the rotational molding method, formation of a silica powder layer on a carbon mold (step S101), arc melting and depressurization (step S102), cooling (step S103), rim cutting and edge processing (step S104) The silica glass crucible 11 is manufactured.

  First, in the formation of the silica powder layer on the carbon mold shown in step S101, as shown in FIG. 3A, a carbon mold 20 having a cavity matched to the outer shape of the silica glass crucible 11 is prepared. Then, while rotating the carbon mold 20, the first silica powder 201 is supplied, scraped off using a scraper, and molded to a predetermined thickness. Thereby, a silica powder layer is formed along the inner surface of the mold. Since the carbon mold 20 is rotating at a constant speed, the supplied first silica powder 201 remains in a fixed position while adhering to the inner surface of the mold by centrifugal force, and its shape is maintained. The first silica powder 201 is preferably natural silica powder because it becomes a non-transparent layer.

  Next, as shown in FIG. 3B, the second silica powder 202, which is a raw material of the transparent layer 13, is supplied into the carbon mold 20 in which the first silica powder layer is formed, and the silica powder layer is made thicker. Form. The second silica powder 202 is supplied on the first silica powder 201 on the inner surface of the mold with a predetermined thickness. The second silica powder 202 is preferably a synthetic silica powder, but may be a natural silica powder.

  Next, in the arc melting and depressurization shown in step S102, as shown in FIG. 4A, the arc electrode 30 is placed in the cavity of the carbon mold 20, and the carbon mold 20 is rotated from the inside of the carbon mold 20 while rotating. Arc discharge is performed to heat and melt the entire silica powder layer to 1720 ° C. or higher. At this time, a thin silica glass seal layer is formed all around. Then, simultaneously with this heating, the pressure is reduced from the carbon mold 20 side, the gas inside the silica is sucked to the outer layer side through the vent holes 21 provided in the carbon mold 20, and the voids in the silica powder layer being heated are degassed. , Remove the bubbles on the inner surface of the crucible. Thereby, a transparent layer 13 substantially free of bubbles is formed.

  The carbon mold 20 is provided with cooling means (not shown). Thereby, it is made not to vitrify the silica of the portion (the portion to be the third region) to be the outer surface of the silica glass crucible 11. The cooling temperature by the cooling means is a temperature at which silica remains as a sintered body and powder without vitrification.

  Thereafter, while continuing heating, the reduced pressure for degassing is reduced or stopped to leave air bubbles, thereby forming the non-transparent layer 15 containing a large number of minute air bubbles.

  Next, in the cooling shown in step S103, the power supply to the arc electrode 30 is stopped, and the fused silica glass is cooled to form the shape of the silica glass crucible 11. When cooling is performed, a cooling gas is sprayed on the silica glass that is the inner surface of the silica glass crucible 11. The distribution of internal residual stress of the silica glass crucible 11 is determined by the cooling conditions, such as the cooling rate and the blowing method of the cooling gas.

Here, when the silica glass is cooled, a pressure is applied to the silica glass crucible 11 due to the difference in thermal contraction between the silica glass crucible 11 and the carbon mold 20. For example, the linear expansion coefficient of silica glass is about 10 ^-7 / K, and at 1000 ° C., it shrinks by about 0.01% of the total length, ie, about 1 mm in a silica glass crucible 11 with a diameter of 1 m. On the other hand, the linear expansion coefficient of carbon is about 10 ^-6 / K, and it will be contracted about 1 mm if the inner diameter is 1 m.

  During this cooling, the sintered body and powder of the third region of silica provided on the outer surface of the silica glass crucible 11 serve as a cushion. That is, when all the silica glass is vitrified, the pressure due to the thermal contraction of the carbon mold 20 at the time of cooling is directly received by the silica glass crucible 11, but the outer surface of the silica glass crucible 11 in contact with the carbon mold 20 The presence of the third region (sintered body and powder of silica) makes it possible to cushion the pressure from the carbon mold 20.

  When cooling the silica glass, the cooling gas may be sprayed while measuring the temperature of a portion to be the inner surface of the silica glass crucible 11 by, for example, a two-dimensional thermograph. In this case, by measuring the temperature of the inner surface of the rotating silica glass crucible 11, it is possible to measure the temperature of the entire inner surface by repeating the temperature measurement of the predetermined region. Alternatively, the temperature of a predetermined region may be measured, and the interval may be calculated by simulation. Also, the temperature of the corner portion 11c which is particularly important for cooling the silica glass may be measured. Furthermore, the temperature of the entire inner surface may be at one time by a two-dimensional thermograph in which the entire inner surface of the silica glass crucible 11 is a measurement range. By controlling the amount, range, time, etc. of the cooling gas while observing the temperature of the portion to be the inner surface of the silica glass crucible 11, the first region (provided from the inner surface IS halfway along the thickness direction of the side wall portion 11a) A silica glass crucible 11 is formed which has a second region (a region provided outside the first region in the thickness direction of the side wall 11a) and the second region).

  Then, in the rim cut and edge processing shown in step S104, as shown in FIG. 4 (b), a part of the upper end side of the side wall 11a of the silica glass crucible 11 taken out from the carbon mold 20 is cut to make the silica glass crucible 11 Adjust the height of the Thereafter, the inner peripheral edge and the outer peripheral edge which are the edge of the upper end surface TP are chamfered to form a chamfered portion C. The upper surface TP of the silica glass crucible 11 is attached with a vacuum adsorber used when transporting the silica glass crucible 11. Therefore, the upper end surface TP is required to have the necessary flatness for vacuum suction.

  In the rim cut, a diamond cutter is applied at a right angle to the central axis of the silica glass crucible 11, but the thin diamond cutter is easily bent in the direction of air bubbles and is not necessarily cut at a right angle. In addition, the upper end surface TP may be chipped during rim cutting.

  The weight of the silica glass crucible 11 is about 50 kg to 60 kg in the 32 inch type (about 81.3 cm in diameter), about 80 kg to 90 kg in the 36 inch type (about 91.4 cm in diameter), and 40 inch type (about 101.6 cm in diameter) Approximately 90 kg to 110 kg. Furthermore, when the silica glass crucible 11 is filled with polycrystalline silicon, it becomes about 300 kg to 500 kg in a 32 inch type, about 400 kg to 800 kg in a 36 inch type, and about 500 kg to 1000 kg in a 40 inch type. Therefore, the upper end surface TP formed in the rim cut needs to have the flatness and the flatness necessary for vacuum-adsorbing the silica glass crucible 11 having such a weight.

  In the method of manufacturing the silica glass crucible 11, breaking of the bond of Si and O by energy and bonding of Si and O by cooling are performed at the stage of melting of the silica powder. How to break the bond between Si and O by energy may be cleavage by thermal energy, cleavage by light energy, or cleavage by radicals generated by arc. Furthermore, the way of cutting also changes with the raw materials of the silica powder. For example, if it is natural silica powder, it will be changed depending on the production site if it is synthetic silica powder, if it is synthetic silica powder.

  Also, the manner of bonding Si and O varies depending on the material and the cooling method. For example, the bonding state of Si-O such as a 6-membered ring or an 8-membered ring is changed by the method of cooling the fused silica powder. In addition, the state of the bond between Si and O changes depending on various conditions such as the difference between the materials of the first silica powder and the second silica powder, the difference in the cooling rate between the inside and the outside, etc. The distribution of internal residual stress also changes.

<A measuring device of silica glass crucible>
FIG. 5 is a schematic view illustrating a measuring device of a silica glass crucible.
The crucible measuring apparatus 100 according to the present embodiment is an apparatus for nondestructively measuring the glass structure, the composition, and the like of the silica glass crucible 11 to be measured by Raman spectroscopy.
The crucible measuring apparatus 100 includes a light shielding unit 110 provided so as to cover the entire silica glass crucible 11, a measurement head 120 provided in the light shielding unit 110, and an arithmetic unit 130.

The silica glass crucible 11 to be measured is used for pulling up a silicon single crystal, and includes a side wall 11a, a bottom 11b and a corner 11c. The light shielding portion 110 is provided in such a size as to cover the silica glass crucible 11 used for pulling such a silicon single crystal as it is.
The light shielding portion 110 is made of a material that prevents the entry of unnecessary external light when measurement is performed by Raman spectroscopy. For example, the material of the light shielding portion 10 is a colored hard polyvinyl chloride resin plate provided with an antireflective coating, and it is preferable that the transmittance of visible light to near infrared region is 0% and the reflectance is 1% or less is there.

Examples of the antireflective coating include carbon black, CNT (carbon nanotube), and titanium black. Also, the surface may be roughened.
As a specific example of the material of the light shielding portion 10, one obtained by coloring a chloroprene rubber sponge with carbon black, laminating a flame retardant material of 100% polyester on the surface and laminating a black urethane resin on the back surface can be mentioned. In addition, the material may be dustproofed or may have an antistatic function.
By thickening the material of the light shielding portion 10, it is possible to block 100% of the penetration of light from the outside. In addition, it is necessary to prevent the scattered light of the laser light source generated inside the light shielding portion 10 or the like from being reflected by the inner wall surface of the light shielding portion 10 and coming back (measure against stray light).

  The measuring head 120 has a light emitting unit 121 and a light receiving unit 122. The light emitting unit 121 has a laser light source for emitting laser light toward the silica glass crucible. The laser light source is an excitation light source for measurement by Raman spectroscopy, and emits a laser of monochromatic light. The wavelength of the laser light is, for example, 532 nm (green wavelength band). The laser beam emitted from the light emitting unit 121 may be directly irradiated to the silica glass crucible 11 or may be reflected by the half mirror 125 and irradiated.

The wavelength of the laser light source should be larger than the energy corresponding to the amount of Raman shift of Raman light (in order to observe Stokes scattering). Stokes scattering is lower in energy than incident light and has a longer wavelength. However, since the amount of energy loss is very small compared to the energy of visible light, a visible light peripheral region is sufficient as a light source.
The Raman shift is a light source wavelength larger than the energy corresponding to 1 cm ⁻¹ , and is a light whose wavelength is approximately shorter than 6.7 μm.
Note that a helium neon laser (wavelength: 632.8 nm), argon ion laser (wavelength: 457.9 nm, 488.0 nm, 514.5 nm, etc.) where helium laser of continuous oscillation is used in a commercially available spectrometer, helium cadmium A gas laser such as a laser (wavelength: 325.0 nm, 441.6 nm), a solid laser (wavelength: 532 nm), a semiconductor laser (wavelength 785 nm, 830 nm) or the like is used.

  The light receiving unit 122 receives the Raman scattered light of the laser light emitted from the light emitting unit 121 in the silica glass crucible 11. The light receiving unit 122 receives a spectral light from a filter that removes Rayleigh scattered light from the laser light reflected by the silica glass crucible 11, a spectroscope that disperses the Raman scattered light that has passed through the filter, and converts it into an electrical signal. And a detector.

  The computing unit 130 performs computation to obtain a Raman spectrum from the Raman scattered light received by the light receiving unit 122. The arithmetic unit 130 may be provided in the light shielding unit 110 or may be provided outside the light shielding unit 110.

The crucible measuring apparatus 100 according to the present embodiment includes the light shielding portion 110 covering the entire silica glass crucible 11 to be measured, and the measurement head 120 is provided in the light shielding portion 110 to emit laser light and Raman scattered light. Since the detection is performed, it is possible to nondestructively measure the very silica glass crucible 11 for pulling up the silicon single crystal.
In order to identify the source of Raman scattering in the crucible measurement apparatus 100, it is necessary to eliminate the unknown light source and to have a measurement environment in which only the light source with the source identified is present. According to the crucible measuring apparatus 100 according to the present embodiment, the CAD of the silica glass crucible 11 can be made to correspond exactly to the portion where the Raman scattering is generated, and erroneous determination can be suppressed.

<Robot arm type measurement system>
FIG. 6 is a schematic view illustrating a robot arm type crucible measuring system to which the crucible measuring device according to the present embodiment is applied.
As shown in FIG. 6, the robot arm type crucible measurement system 200 includes a multi-joint robot arm 210, a measurement head 120 attached to the robot arm 210, and a mount 220 on which the silica glass crucible 11 to be measured is mounted. , A light shielding unit 110, a controller 250, an operation unit 130, and a database unit 140.

  The robot arm 210, the measuring head 120 and the gantry 220 are covered by the light shielding unit 110. That is, the robot arm 210, the measurement head 120, and the gantry 220 operate under an environment in which the influence of disturbance light is eliminated by the light shielding unit 110.

  The robot arm 210 has, for example, a six-axis arm structure, so that the position of the measurement head 120 and the emission direction of the laser light can be adjusted in accordance with the shape of the silica glass crucible 11.

  The gantry 220 includes a horizontal gantry 221 and a pedestal 224. The horizontal mount 221 and the pedestal 224 are configured to be able to be mounted as they are, for example, even a large silica glass crucible 11 of 28 inches or more. A slide rail 223 may be provided on the horizontal mount 221 of the mount 220. The slide rail 223 is provided with a pedestal 224 movable horizontally along the slide rail 223. The silica glass crucible 11 to be measured is placed on the pedestal 224 and moved along the slide rail 223 to the measurement position.

  The controller 250 controls the operation of the robot arm 210. The controller 250 controls the position of the robot arm 210 using the design data (CAD data etc.) of the silica glass crucible 11 to be measured, and controls the measurement area by the measurement head 120. Here, as CAD data, the outer diameter, inner diameter, height (height from bottom 11 b of crucible to upper end surface TP, height of side wall 11 a) of crucible, thickness, curvature (bottom 11 b to corner 11 c Curvature), three-dimensional coordinate data (outside surface of crucible, inner surface, rim end face, mesh of finite element method, polygon data, etc.). By utilizing the design data, the positional relationship between the measurement head 120 and the measurement point of the silica glass crucible 11 can be set accurately.

  The calculation unit 130 performs calculation to obtain a Raman spectrum from the Raman scattered light received by the light receiving unit 122 of the measurement head 120. Further, the operation unit 130 refers to the data of the database unit 140 and determines the quality of the silica glass crucible 11 to be measured based on the silicon single crystallization ratio corresponding to the Raman spectrum of the silica glass crucible 11 to be measured. Do the process.

  The database unit 140 stores design data of the silica glass crucible 11 for controlling the operation of the robot arm 210 by the controller 250. Further, the database unit 140 has data indicating the relationship between the Raman spectrum of the silica glass crucible 11 for sample and the silicon single crystallization rate when the silicon single crystal is pulled up by the silica glass crucible 11 for sample. Based on this data, the computing unit 130 performs the quality determination based on the silicon single crystallization rate corresponding to the Raman spectrum of the silica glass crucible 11 to be measured.

  Moreover, the database part 140 may have the data of each Raman shift of the three-membered ring of silica glass in a silica glass crucible for samples, a four-membered ring, and a Si-O-Si bond angle. Thereby, the calculation unit 130 determines the silica glass crucible 11 based on the Raman shifts of the three-membered ring, the four-membered ring, and the Si-O-Si bond angle of the silica glass from the Raman spectrum obtained for the silica glass crucible to be measured. It is possible to determine the quality of the

  In addition, the database unit 140 pulls up the n-th time (n is a natural number) of the silicon single crystal with the silica glass crucible for sample, and the silicon single crystallization rate at the time of subsequently performing the n + 1-th time pulling is set in advance. You may have data which show the relationship between the probability of exceeding these values and the Raman spectrum of the silica glass crucible for a sample. As a result, the calculation unit 130 can determine the quality of the silica glass crucible 11 to be measured based on the Raman spectrum of the silica glass crucible 11 to be measured, with reference to the data of the database unit 140.

<Measurement method>
FIGS. 7A and 7B are schematic views illustrating a crucible measurement method by the robot arm type crucible measurement system.
First, as shown in FIG. 7A, the silica glass crucible 11 is placed on the pedestal 224, and the measuring head 120 is set at the reference position (home position). The controller 250 refers to design data (CAD data etc.) of the silica glass crucible 11 to be measured from the database unit 140, controls the robot arm 210, and moves the measuring head 120 to the home position.

  Next, as shown in FIG. 7B, the measurement head 120 is set to face the measurement area of the inner surface IS of the silica glass crucible 11. The controller 250 controls the robot arm 210 based on the design data of the silica glass crucible 11 to align the orientation of the measuring head 120 with the geodesic region.

  Then, a laser beam is emitted from the light emitting unit 121 of the measurement head 120 toward the measurement region of the inner surface IS of the silica glass crucible 11. The light receiving unit 122 of the measurement head 120 detects the Raman scattered light among the laser light reflected by the inner surface IS, and calculates the Raman spectrum by the calculation unit 130.

  The controller 250 controls the robot arm 210 so that the measurement head 120 is directed to the next measurement area after the measurement of one Raman spectrum is completed. The controller 250 sequentially moves, for example, the measurement area by the measurement head 120 from the upper end to the bottom of the inner surface IS. Thus, measurement of one vertical row of the inner surface IS is performed.

  Then, the controller 250 rotates the pedestal 224 a fixed amount to rotate the silica glass crucible 11 by a predetermined angle. In this state, the measurement area of the measurement head 120 is sequentially moved from the upper end to the bottom in the same manner as described above, and measurement for the next one row is performed. By repeating this operation, the entire Raman spectrum of the inner surface IS of the silica glass crucible 11 can be obtained.

FIGS. 8A and 8B are schematic diagrams for explaining the measurement area.
As an example, assuming that the size of one measurement area MR shown in FIG. 8A is 100 mm × 100 mm, the length from the upper end surface TP of the side wall 11a to the center of the bottom 11b is 790 mm. Approximately eight measurement regions MR are allocated to the row. That is, one vertical row can be measured with eight images.

  The controller 250 measures the Raman spectrum for one longitudinal column, and rotates the pedestal 224 a fixed amount to rotate the silica glass crucible 11 by a predetermined angle. In this state, the measuring head 120 obtains the Raman spectrum for one longitudinal column next to the inner surface IS in the same manner as described above. By repeating this operation, as shown in FIG. 8 (b), it is possible to automatically obtain a Raman spectrum of the entire circumference of the inner surface IS of the silica glass crucible 11. By obtaining the Raman spectrum of the entire circumference of the inner surface IS of the silica glass crucible 11, it is possible to grasp a local change in the spectrum of the spiral in the silica glass crucible 11.

  As an example, when the circumference of the inner surface IS of the silica glass crucible 11 is 2450 mm, about 25 measurement regions MR are allocated in the circumferential direction. That is, since about 200 measurement regions MR are assigned to the entire circumference of the inner surface IS, it is possible to measure the Raman spectrum of the entire circumference by about 200 images.

For example, one measurement point of the Raman spectrum can be measured in 1 millisecond (ms). Assuming that the size of one measurement point is 1 mm ² , the range of 100 mm × 100 mm can be measured in 10 seconds. Therefore, a Raman spectrum (about 200 measurement points) on one inner surface IS of the silica glass crucible 11 can be acquired in 2000 seconds (about 34 minutes or less).

  In the measurement of strain by the robot arm type crucible measurement system 200 as described above, the robot arm 210 and the measurement are performed by controlling the positions of the robot arm 210 and the measurement head 120 using CAD data of the silica glass crucible 11 or the like. The positional relationship between the measurement head 120 and the measurement area can be accurately and quickly set while avoiding the interference between the head 120 and the silica glass crucible 11.

  Further, according to this robot arm type crucible measuring system 200, since the whole of the silica glass crucible 11 to be measured can be measured in a state covered by the light shielding portion 110, the whole of the silica glass crucible 11 can be measured nondestructively. Can. In addition, it is also possible to measure the Raman spectrum of the silica glass crucible 11 itself which actually pulls up a silicon single crystal. Moreover, the influence of disturbance light is suppressed by the light shielding portion 110, and it becomes possible to measure the entire Raman spectrum of the inner surface IS of the silica glass crucible 11 with high precision and automatically.

<Evaluation method of crucible>
Next, a crucible evaluation method according to the present embodiment will be described. The crucible evaluation method according to the present embodiment is performed by the crucible measurement apparatus 100 or the robot arm type crucible measurement system 200. As described above, in the crucible measuring apparatus 100 and the robot arm type crucible measuring system 200 according to the present embodiment, the entire Raman spectrum of the silica glass crucible 11 can be measured with high precision and automatically. By using this, information of the Raman spectrum of the silica glass crucible manufactured under various conditions and the Raman spectrum of the silica glass crucible 11 before and after pulling up of the silicon single crystal can be accumulated in the database section 140. The quality of the silica glass crucible can be determined by using the information of the accumulated Raman spectrum.
The inventors of the present invention analyzed the Raman spectrum of the silica glass crucible under various conditions, and obtained new findings as a reference for determining the quality of the silica glass crucible.

(1. Silica glass crucible crystallized by mineralizer)
During pulling up of a silicon single crystal using a silica glass crucible, an oxygen-deficient link-like cristobalite crystal called brown ring is formed in the transparent layer on the inner surface. Cristobalite may also be formed due to scratches on the inner surface of the silica glass crucible. When the brown ring is peeled off and mixed in the silicon melt, it causes the reduction of the silicon single crystallization rate.

  Therefore, a component (mineralizing agent) that promotes crystallization of silica such as barium or aluminum is applied to the inner surface of the silica glass crucible, and uniform silica is formed on the inner surface of the silica glass crucible by the high temperature at the time of pulling the silicon single crystal. While forming a crystal layer and preventing brown ring from occurring, mechanical strength of the silica glass crucible is enhanced.

  The inventors of the present invention measured the Raman spectrum of the inner surface of a silica glass crucible coated with barium as a mineralizer after pulling (after use) a silicon single crystal. In the silica glass crucible after use, a crystal layer in which silica glass is crystallized by a mineralizer and an amorphous layer in contact with this crystal layer are formed on the inner surface side.

9-11 show examples of Raman spectra after use of a silica glass crucible coated with barium as a mineralizer.
FIGS. 9 to 11 show the measurement results of Raman spectra of samples of different silica glass crucibles, and the first Raman spectrum RS1, which is a Raman spectrum of the surface of the crystal layer for each silica glass crucible, the crystal layer and the noncrystal A second Raman spectrum RS2 which is a Raman spectrum on the crystal layer side at the interface with the layer and a third Raman spectrum RS3 which is a Raman spectrum on the noncrystalline layer side at the interface between the crystal layer and the noncrystalline layer are shown.
In these Raman spectra, a peak of Raman shift of cristobalite is indicated by PK_CB, and a peak of Raman shift of barium is indicated by PK_Ba.

  About the silica glass crucible of each sample, after use, it can be seen that the peak PK_Ba of Raman shift due to the mineralizer barium does not appear in the first Raman spectrum RS1, but appears in the second Raman spectrum RS2. . This is considered to be because barium applied to the inner surface of the silica glass crucible moved from the surface of the crystal layer to the crystal layer side of the interface with the non-crystal layer.

  In addition, peaks PK_CB of Raman shift due to cristobalite appear in the first Raman spectrum RS1 and the second Raman spectrum RS2 in all the samples. On the other hand, for the third Raman spectrum RS3, there are samples in which the peak PK_CB appears and samples in which the peak PK_CB does not appear. The sample in which the peak PK_CB of the Raman shift due to cristobalite appears in the third Raman spectrum RS3 has less cristobalite peeling than the sample in which the peak does not appear. This indicates that cristobalite has good adhesion (reactivity) from the inner surface to a deep position.

  From these results, it is judged whether the quality of the silica glass crucible is good or bad by whether or not the peak PK_CB of the Raman shift attributed to cristobalite exists in any of the first Raman spectrum RS1, the second Raman spectrum RS2 and the third Raman spectrum RS3. Can. Specifically, it can be determined that the silica glass crucible in which the peak PK_CB is present in the third Raman spectrum RS3 is non-defective as compared to the silica glass crucible in which the peak PK_CB is not present.

  In addition, quality determination can also be performed based on whether or not the peak PK_Ba of the Raman shift of barium appears in the second Raman spectrum RS2. That is, when the peak PK_Ba of the Raman shift of barium is present in the second Raman spectrum RS2, it can be determined to be non-defective as compared with the case where it is not present.

Moreover, the quality determination can also be performed according to the presence or absence of the peak PK_Ba of the Raman shift of barium in the first Raman spectrum RS1 and the second Raman spectrum RS2. That is, when the peak PK_Ba does not exist in the first Raman spectrum RS1 and the peak PK_Ba exists in the second Raman spectrum RS2, it can be determined that the silica glass crucible is a non-defective product.
In addition, when the same Raman shift was measured by making the silica glass crucible which peeling of the brown ring generate | occur | produced as a comparative example, peak PK_Ba of the Raman shift of barium is not present in 2nd Raman spectrum RS2 in the silica glass crucible of a comparative example. The

(2. Transition of Raman shift before and after use)
Next, the inventors of the present application measured Raman spectra before and after pulling of a silicon single crystal (before and after use) for a silica glass crucible.
FIG. 12 is a view showing an example of a Raman spectrum of a silica glass crucible.
When the Raman spectrum of the inner surface of the silica glass crucible is measured, a peak is detected in the Raman shift according to the glass structure. Peak PK_D2 shown in FIG. 12 is a peak corresponding to the 3-membered ring (D2) in the cyclic structure of glass, and is detected in the vicinity of 600 cm ⁻¹ . Moreover, peak PK_D1 is a peak corresponding to the 4-membered ring (D1) in the cyclic structure of glass, and is detected in the vicinity of 490 cm ⁻¹ . Moreover, peak PK_SiOSi is a peak resulting from the bond angle of Si-O-Si, and is detected in 800 cm < ^-1 > vicinity.

The Raman spectrum of such a silica glass crucible was measured for each sample before and after use. As a result, it was found that the peak positions of the Raman shift transition before and after use.
FIG. 13 is a diagram showing the transition of Raman shift before and after use.
FIG. 13 (a) shows a Raman spectrum measured at the outside (glass portion) of the brown ring, and FIG. 13 (b) shows a Raman spectrum measured at the center of the brown ring. In each figure, the horizontal axis indicates the Raman shift (peak PK_D1) of D1, and the vertical axis indicates the Raman shift (peak PK_D2) of D2. Here, measurement results of two silica glass crucibles of the first sample and the second sample are shown.

  For the first sample and the second sample, the Raman shift before use, the Raman shift after one pulling of the silicon single crystal, and the Raman shift after two pulling of the silicon single crystal were measured.

  The arrow R1 shown in FIG. 13 (a) indicates the direction of the transition of the Raman shift after pulling once from before using the first sample, and the arrow R2 indicates the Raman shift after pulling twice from before using the first sample The arrow R3 indicates the direction of the transition of the Raman shift after pulling up once before the use of the second sample, and the arrow R4 indicates the direction of the transition of the Raman shift after pulling up twice before the use of the second sample Indicates the direction of the transition of

  The arrow S1 shown in FIG. 13 (b) indicates the direction of the transition of the Raman shift after pulling once from before using the first sample, and the arrow S2 indicates the Raman shift after pulling twice from before using the first sample The arrow S3 indicates the direction of the transition of the Raman shift after pulling up once before the use of the second sample, and the arrow S4 indicates the direction of the transition of the Raman shift after pulling up twice before the use of the second sample Indicates the direction of the transition of

  As shown to FIG. 13 (a) and (b), it turns out that the Raman shift of D1 and D2 of a silica glass crucible changes before and behind use. Further, even in the same sample, the amount and direction of transition of Raman shift are different between the outside and the center of the used brown ring.

FIG. 14 is a diagram showing transition of Raman shift before and after use.
In FIG. 14, each of the three axes orthogonal to one another indicates the Raman shift of D1 (peak PK_D1), the Raman shift of D2 (peak PK_D2), and the Raman shift (peak PK_SiOSi) due to the bonding angle of Si—O—Si. ing. Here, the measurement results of two silica glass crucibles of the first sample and the second sample are shown as described above. Moreover, the measurement position of the Raman shift after use is the outer side (glass part) of the brown ring.

  Arrow T1 shown in FIG. 14 indicates the direction of transition of the Raman shift after pulling once from before use of the first sample, and arrow T2 indicates transition of the Raman shift after pulling twice from before use of the first sample. The arrow T3 indicates the direction of the transition of the Raman shift after pulling once from before the use of the second sample, and the arrow T4 indicates the transition of the Raman shift after pulling twice from before the use of the second sample Indicates the direction.

  As shown in FIG. 14, in addition to the Raman shifts of D1 and D2 of the silica glass crucible, it can be seen that the Raman shifts due to the bonding angle of Si—O—Si also transition before and after use.

  Among the samples for which measurement was performed, the crystallization rate of the silicon single crystal pulled up by the first sample was the highest. That is, the silica glass crucible of the first sample has a higher evaluation than the silica glass crucible of the second sample.

From these results, it is possible to evaluate the silica glass crucible based on the transition from the Raman spectrum before the use of the silica glass crucible to the Raman spectrum after the use.
One of the evaluations is evaluation based on the transition of peak PK_D1 of D1 and the transition of peak PK_D2 of D2. About this evaluation, evaluation using the Raman shift measured on the outer side of a brown ring, and evaluation using the Raman shift measured on the center of a brown ring can be performed.

  Specifically, when the Raman spectrum is measured outside the brown ring, the Raman shift (peak PK_D1) of D1 after use is larger than the Raman shift D0 (peak PK_D1) in the Raman spectrum before use In some cases, a higher rating can be made than in the case of no growth.

  When the Raman spectrum is measured at the center of the brown ring, the Raman shift (peak PK_D1) of D1 after use is greater than the Raman shift D1 (peak PK_D1) in the Raman spectrum before use. It is possible to make a high evaluation compared to the case where the size is not large.

When evaluating with measured values of Raman spectra, the peak PK D1 of D1 before use is 487 cm- ¹ or less and the peak PK D1 of D1 after use is greater than 487 cm- ^{1 at} the outside and at the center of the Browning ring Can make a high evaluation.

  Moreover, in addition to the transition of the Raman shift of D1 (peak PK_D1) and the transition of the Raman shift of D2 (peak PK_D2) as one of the other evaluations, the Raman shift (peak of peak) due to the bond angle of Si-O-Si Evaluation based on transition of PK_SiOSi).

  Specifically, when the Raman spectrum is measured outside the brown ring, the peak after pulling once after using the Raman shift (peak PK_SiOSi) due to the bond angle of Si-O-Si in the Raman spectrum before use When PK_SiOSi is large, high evaluation can be performed as compared to the case where PK_SiOSi is not large.

  Also, the probability that the silicon single crystallization rate exceeds the preset value when the silicon single crystal is pulled n th (n is a natural number) and subsequently n + 1 th pulled using a silica glass crucible for sample The determination may be performed using data indicating the relationship between (usable ratio) and the Raman spectrum of the silica glass crucible for the sample. That is, the Raman spectrum of the silica glass crucible to be measured is measured, and the availability rate of the silica glass crucible to be measured is estimated based on the relationship between the measured Raman spectrum and the Raman spectrum obtained in advance and the availability rate. The quality can be determined.

Here, the enabling rate is obtained by the following equation.
Usability ratio (%) = (the number of pulling up when the single crystallization rate was above the reference value) / (total number of pulling up)
The reference value is, for example, 90%.

FIG. 15 is a diagram showing the relationship between the number of continuous use of the crucible and the enabling rate.
From this figure, the silica glass crucible of the first sample has an enabling rate of over 90% even after three consecutive uses. On the other hand, the silica glass crucible of the second sample has an enabling rate of less than 90% even after two continuous use.

Moreover, the present inventors measured the Raman spectrum by the number of times of pulling of the silicon single crystal about the silica glass crucible.
Fig.16 (a)-(d) is a figure which shows the result of having measured the Raman shift (D1, D2) of the silica glass crucible of 1st sample. (A) before use, (b) after one use, (c) after two use, and (d) after three use. The first samples are six of A to F.
17 (a) to 17 (d) are diagrams showing the results of measuring the Raman shifts (D1, D2) of the silica glass crucible of the second sample. (A) before use, (b) after one use, (c) after two use, and (d) after three use. The second samples are six of G to L.

  As a result, it was found that there is a difference in the change of the Raman shift depending on the number of times of pulling between the silica glass crucible of the first sample with high evaluation and the silica glass crucible of the second sample with low evaluation.

(1) In a highly evaluated silica glass crucible, the Raman shift (peak PK_D1) of D1 and the Raman shift (peak PK_D2) of D2 are within a predetermined range (peak PK_D1) in the state before pulling up the silicon single crystal (before use) Hereinafter, it will be referred to as "D1-D2 evaluation reference range".
(2) The highly evaluated silica glass crucible is in the D1-D2 evaluation reference range both before pulling (before use) and after pulling once the silicon single crystal.
(3) A highly evaluated silica glass crucible is within the D1-D2 evaluation standard range when the silicon single crystal is pulled once, but is out of the D1-D2 evaluation standard range after the second time.
(4) The low evaluation silica glass crucibles are out of the D1-D2 evaluation reference range both before pulling (before use) and after use (regardless of the number of times of use) of the silicon single crystal.

Square frames shown in FIG. 16 and FIG. 17 indicate the D1-D2 evaluation reference range.
The D1-D2 evaluation reference range is as follows.
The range of the Raman shift (peak PK_D1) of D1 is 486 cm ⁻¹ or more and 491 cm ⁻¹ or less.
The range of the Raman shift (peak PK_D2) of D2 is 599 cm ⁻¹ or more and 601 cm ⁻¹ or less.

  Considering these results comprehensively, the Raman shift is measured before the silicon single crystal pulling (before use) of the silica glass crucible, and if the measurement results fall within the D1-D2 evaluation reference range, it is highly evaluated. It can be determined that it is a silica glass crucible.

(3. Evaluation by Raman shift inside and outside the brown ring)
FIG. 18 is a schematic view illustrating a brown ring.
When a silicon single crystal is pulled using a silica glass crucible, a brown ring BR is generated in the transparent layer on the inner surface of the silica glass crucible. The brown ring BR is formed in a circular shape on the inner surface of the silica glass crucible and gradually grows. As they grow, brown rings BR adjacent to each other eventually combine to form a large cristobalite region.

  The inventors of the present application measured such Raman shifts inside and outside of the brown ring BR, and found a criterion for judging the quality of the silica glass crucible.

FIGS. 19-23 is a figure which shows the example of the Raman spectrum in each sample of a silica glass crucible.
The Raman spectrum in the silica glass crucible of sample A is shown by FIG. In the silica glass crucible of sample A, the silicon single crystal is pulled up once.
The measurement points of the Raman spectrum are measurement points p1 to p5. Measurement point p1 is the outside of the brown ring BR (glass portion), measurement point p2 is the edge of the brown ring BR, measurement point p3 is the inside of the brown ring BR (part with gloss), and measurement point p4 is the inside of the brown ring BR ( Non-glossy part), measurement point p5 is the center position of the brown ring BR.

  In the silica glass crucible of sample A, quartz glass was detected at measurement points p1 and p2, and single crystal silicon and cristobalite were detected at other measurement points p3, p4 and p5.

The Raman spectrum in the silica glass crucible of sample B is shown by FIG. In the silica glass crucible of sample B, the silicon single crystal is pulled up once.
The measurement points of the Raman spectrum are measurement points p1 to p6. Measurement point p1 is the outside of the brown ring BR (glass part), measurement point p2 is the edge of the brown ring BR, measurement point p3 is the inside of the brown ring BR (no gloss part), measurement point p4 is the inside of the brown ring BR ( Glossy, wrinkled part), measurement point p5 is the inside of the brown ring BR (glossy, no wrinkled part), and measurement point p6 is the center position of the brown ring BR.

  In the silica glass crucible of sample B, single crystal silicon was detected at all measurement points p1 to p6. In addition, cristobalite was detected only at measurement point p3. From the results of measurement points p4 and p5, no difference due to the presence or absence of wrinkles was observed in the glossy portion on the inside of the brown ring BR.

The Raman spectrum in the silica glass crucible of the sample C is shown by FIG. In the silica glass crucible of sample C, the silicon single crystal is pulled twice.
The measurement points of the Raman spectrum are measurement points p1 to p8. Measurement point p1 is the outside of the brown ring BR (glass portion), measurement point p2 is the edge of the brown ring BR, measurement point p3 is the inside of the brown ring BR (part with gloss), and measurement point p4 is the inside of the brown ring BR ( Part without gloss), measuring point p5 is inside of brown ring BR (part with gloss), measuring point p6 is near center of brown ring BR (part with wrinkles), measuring point p7 is central position of brown ring BR, The measurement point p8 is inside the peeled portion.

  In the silica glass crucible of sample C, cristobalite was detected only at measurement point p3. Single crystal silicon and quartz glass were detected at other measurement points p1, p2, p4, p5, p6 and p7. At the measurement point p8, only quartz glass was detected.

A Raman spectrum of the silica glass crucible of sample D is shown in FIG. In the silica glass crucible of sample D, the silicon single crystal is pulled up once.
The measurement points of the Raman spectrum are measurement points p1 to p5. Measurement point p1 is the outside of the brown ring BR (glass part), measurement point p2 is the edge of the brown ring BR, measurement point p3 is the inside of the brown ring BR (no gloss part), measurement point p4 is the inside of the brown ring BR ( The glossy portion) and the measurement point p5 are the center position of the brown ring BR.

  In the silica glass crucible of sample D, single crystal silicon was detected at all measurement points p1 to p5. In addition, cristobalite was detected only at measurement point p3.

The Raman spectrum in the silica glass crucible of sample E is shown by FIG. In the silica glass crucible of sample E, the silicon single crystal is pulled twice.
The measurement points of the Raman spectrum are measurement points p1 to p5. In the silica glass crucible of sample E, wrinkles were found on the entire inner surface, and no brown ring BR was observed. The measurement point p1 is a glossy part, the measurement point p2 is a wrinkle part (1), the measurement point p3 is a wrinkle part (2), the measurement point p4 is the inside of the peeled part (1) and the measurement point p5 is a peeled part Inside (2).

In the silica glass crucible of sample E, single crystal silicon was detected at all measurement points p1 to p5. In addition, cristobalite was not detected at measurement points p1 to p3. On the other hand, cristobalite was detected at measurement point p4.
Among the samples A to E, those in which cristobalite is detected only in the non-glossy part of the brown ring BR are determined as non-defective products. Further, those in which cristobalite is not detected at any of the measurement points are further determined to be non-defective products. That is, it is determined that the less the frequency of generation of cristobalite after pulling up the silicon single crystal, the better the product.

<A crucible with a brown ring connected to the inner surface>
FIG. 24 is a diagram showing the time until the entire inner surface of the silica glass crucible is covered with the brown ring.
When pulling up a silicon single crystal, if the brown ring is scattered on the inner surface of the silica glass crucible, the brown ring may be peeled off during the pulling and mixed in the silicon melt. In addition, when brown rings are scattered on the inner surface of the silica glass crucible, unevenness is present on the inner surface, and it is thought that heterogeneous nucleation tends to occur when pulling up a silicon single crystal. The occurrence of heterogeneous nucleation causes a decrease in the single crystallization rate of the pulled silicon single crystal. Since the brown ring grows during pulling, the brown ring is connected and integrated along the circumferential direction of the inner surface at least at a part in the height direction on the inner surface of the silica glass crucible early from the start of pulling If grown, cristobalite continues in the circumferential direction, the possibility of peeling can be greatly reduced, and the single crystal ratio of silicon can be increased.

  Here, when pulling up a silicon single crystal, when polycrystalline silicon is charged into a silica glass crucible and melted, the crucible inner wall surface above the solid-liquid interface (solid-liquid interface at the beginning) before pulling up is pulled. , Cristobalite is not generated. That is, since the solid-liquid interface is lowered when the silicon single crystal is pulled, cristobalite is not generated above the initial solid-liquid interface during pulling.

  Cristobalite is polycrystalline silica and silica glass is not crystalline. The phase transition from “silica glass” upon contact with the silicon melt becomes polycrystalline cristobalite. By forming cristobalite on the entire surface of the crucible, it becomes polycrystalline from glass and the inner surface of the crucible is strengthened in a CZ environment. Once cristobalite is formed, no irreversible phase transition to silica glass occurs.

  As described above, the silicon single crystal ratio can be increased by the cristobalite being continuous in the circumferential direction of the content surface of the silica glass crucible, but a brown ring (cristobalite) is formed on the inner surface of the crucible after the nth use. It is difficult to identify the silica glass crucible which is generated and connected and integrated with the brown ring after the (n + 1) th use in a state before use.

  Moreover, when pulling up a silicon single crystal, SiO gas is generated by the reaction of Si (liquid) + O → SiO (gas) depending on the rise in pulling temperature and the decrease in atmospheric pressure, and the silicon melt is a silica glass crucible. Bouncing from the inner surface may cause surface vibration. When the surface vibration occurs, the seed crystal can not be bonded to a flat surface, and problems such as polycrystallization of silicon during pulling occur.

  It is known that the occurrence of such surface vibration is related to the state of the inner surface of the silica glass crucible. As described above, in the silica glass crucible in which the brown rings are connected and integrated at the inner surface (the cristobalite continues continuously in the circumferential direction of the inner surface), it is possible to suppress the water surface vibration. That is, since cristobalite is crystalline, the dissolution rate of the inner surface when contacted with the silicon melt is slower than when cristobalite is not provided. Therefore, if cristobalite continues in the circumferential direction of the inner surface, the generation of SiO gas from the inner surface in contact with the silicon melt is suppressed. Thereby, the melt surface vibration of the silicon melt is suppressed.

  In FIG. 24, the abscissa represents the number of brown rings generated at the initial stage of reaction with silicon (the number of brown rings on the entire inner surface of the silica glass crucible after pulling up the silicon single crystal), and the ordinate represents the inner surface of the silica glass crucible The time until the brown ring covers the whole is shown. Here, the initial stage of the reaction means that the polysilicon charged into the silica glass crucible is heated at 1423 ° C., and about 30 minutes pass (the polysilicon begins to melt and react with the inner surface). The graph G1 shown in FIG. 24 is a graph estimated from the value measured by the dip test, and the graph G2 is a graph estimated from the measured value when melted in the light heating furnace.

  Here, as shown in FIG. 25A, in the dip test, a sample plate 310 of silica glass is prepared, and the sample plate 310 is dipped in the melted silicon 320 for a predetermined time. Thereby, silicon 320 and silica glass are reacted, and the number of brown rings generated in this reaction is measured. By preparing sample plates 310 having different lengths, the contact area between silica glass and silicon can be adjusted.

  As shown in FIG. 25B, in the test of the light heating furnace, the silicon plate 330 placed under the sample plate 310 of silica glass is melted by lamp heating and reacted for a predetermined time. The sample plate 310 of silica glass is, for example, 10 mm long × 10 mm wide × 2 to 3 mm thick. Moreover, the cut surface of the sample board 310 cut out from the silica glass crucible is mirror-polished. As an example of heating conditions, the temperature rising rate is 50 ° C./min (30 minutes to 1500 ° C.), the holding time is 2 hours (1500 ° C.), the temperature falling rate is 50 ° C./min, and the atmosphere is Ar (1 atm). In the test of the light heating furnace, the surface of the sample plate 310 (the inner surface of the silica glass crucible) and the silicon plate 330 are brought into contact and heated, and the state is measured by the camera 340 from the back surface (mirror polished surface) side of the sample plate 310 Observe. Thereby, a brown ring is generated at the interface between silica glass and molten silicon, and the number of the generated brown ring is measured.

  For example, the time required to pull 1 m of silicon single crystal once using a 32 inch silica glass crucible is about 150 hours (about 1 day for raw material dissolution; About 2 days in 1 mm / 1 minute), about 3 days in tail and recovery). Therefore, in order to ensure that the entire inner surface of the silica glass crucible is covered with the brown ring when pulling up the silicon single crystal once, the number of brown rings at the initial stage of the reaction is about 1700 or more. It can be understood that it is sufficient (see arrow in FIG. 24).

  Thus, by using a silica glass crucible in which the number of brown rings is a certain number or more at the initial stage of the reaction, the entire inner surface of the silica glass crucible (a silica glass crucible and a silicon The brown ring is in the state of covering all the interface in the area in contact with the liquid. Therefore, the peeling of the brown ring is suppressed in the second and subsequent pulling operations, and a silicon single crystal with a high crystallization rate can be manufactured.

<Pulling device>
FIG. 26 is a schematic view showing an entire configuration of a pulling apparatus which is a manufacturing apparatus of silicon single crystal according to the present embodiment.
A crucible CR for containing the silicon melt 23 is provided inside the chamber 510 forming the appearance of the pulling apparatus 500, and a carbon susceptor 520 is provided to cover the outside of the crucible CR. The crucible CR used in the pulling device 500 is the silica glass crucible 11 according to the present embodiment. The carbon susceptor 520 is fixed to the upper end of the support shaft 530 parallel to the vertical direction. The crucible CR is rotated in a predetermined direction by the support shaft 530, and is vertically movable so that the liquid level of the silicon melt can be controlled to a fixed height with respect to the heater 540 in the furnace. .

  The outer peripheral surface of the crucible CR and the carbon susceptor 520 is surrounded by the heater 540. The heater 540 is further surrounded by a heat insulating cylinder 550. In the process of melting the raw material in growing the silicon single crystal, the high purity polycrystalline silicon raw material filled in the crucible CR is heated and melted by the heating of the heater 540 to become the silicon melt 23.

  At the upper end of the chamber 510 of the pulling apparatus 500, a pulling means 560 is provided. A wire cable 561 hanging down toward the rotation center of the crucible CR is attached to the pull-up means 560, and a pull-up motor (not shown) for rolling up or unwinding the wire cable 561 is provided. The seed crystal 24 is attached to the lower end of the wire cable 561.

  A cylindrical heat shielding member 570 is provided between the silicon single crystal 25 and the heat insulating cylinder 550 so as to surround the silicon single crystal 25 being grown. The heat shielding member 570 has a cone 571 and a flange 572. By attaching the flange portion 572 to the heat insulating cylinder 550, the heat shielding member 570 is disposed at a predetermined position (hot zone). The diameter of the body portion of the silicon single crystal 25 to be grown is about 465 mm at the maximum including a cutting allowance at the time of pulling so that it can be, for example, 450 mm after surface cutting. Under the present circumstances, when the silica glass crucible of this invention is used, since a deformation | transformation of the silica glass crucible at the time of pull-up can be prevented, the dimension of the carbon susceptor 520 and the heat shielding member 570 and the attachment clearance become wide.

  In the pulling apparatus 500, heating of the crucible CR is performed by the heater 540 in a state where the periphery of the crucible CR is covered with the carbon susceptor 520. In recent years, the diameter of the crucible CR is increased to 32 inches or more, and the crucible CR is heated to about 1500 ° C. to 1600 ° C. to melt the polycrystalline silicon raw material. At this time, although it is expanded by the crucible CR heating, it can not expand outward since it is covered with the carbon susceptor 520, and expands upward, which is open.

  In the silica glass crucible 11 according to the present embodiment as the crucible CR, since the regions of substantially uniform strain continue in the vertical direction of the side wall portion 11a in both the first region and the second region, the expansion of the crucible CR at the time of heating Even if there is, it can maintain a stable shape without causing cracking, cracking, peeling, falling inward, and the like.

  Here, it is necessary to make the gap D between the crucible CR during pulling of the silicon single crystal and the cone portion 571 which is a hot zone as narrow as possible. That is, for example, in the case of a crucible CR having a large diameter of 32 inches or more, the gap D is set to, for example, 30 mm to heat the heat from the heater 540 to the center of the crucible CR efficiently and to heat the solid-liquid interface to about 1420.degree. It needs to be as narrow as about 40 mm. In addition, as the silicon single crystal pulling progresses, the silicon melt in the crucible CR decreases. Therefore, when the crucible CR ascends in order to make the liquid surface of the silicon melt a constant height with respect to the heater 540 in the furnace, the gap D between the cone portion 571 and the crucible CR narrows. In such a situation, if the crucible CR falls to the inside, the crucible CR comes in contact with the heat shielding member 570 (cone portion 571).

Since the crucible CR is rotating during pulling up of the silicon single crystal 25, the heat shielding member 570 or the heat shielding member 570 is brought into contact when the straight cylinder portion rotates while contacting the heat shielding member 570 while the crucible CR falls to the inside. It leads to breakage of crucible CR. When the heat shielding member 570 is damaged, the pulling of the silicon single crystal 25 must be stopped, and when the crucible CR is broken, the silicon melt is leaked, and the pulling device is broken, which is expensive and long-term It will need to be repaired.
Further, control of the height H between the liquid surface of the silicon melt and the cone portion 571 is very important in controlling the temperature gradient in the vicinity of the solid-liquid interface of the silicon single crystal 25 and controlled by 0.1 mm unit (See Non-Patent Document 1).

  When deformation of the crucible CR occurs, the volume of the crucible CR changes the position of the liquid surface, and the height H changes, leading to deterioration of crystal quality (crystal diameter, defects in crystal, etc.) and crystal The yield of

  The cooling gas flows from the space between the silicon single crystal 25 and the cone portion 571 through the portion shown at the height H to the outside through the gap D as shown by the arrow F in the figure. Therefore, when the gap D and the height H change, the flow velocity of the cooling gas changes, and the set temperature gradient changes, which results in the deterioration of the crystal quality.

  Since the fall and deformation of the crucible CR are suppressed, the contact between the crucible CR and the heat shielding member 570 can be avoided, and pulling can be performed by the set temperature gradient, and silicon single crystal of excellent crystal quality can be obtained. Crystal 25 can be produced. Therefore, the manufacturing yield of the silicon single crystal can be improved.

<Method of manufacturing silicon single crystal>
Fig.27 (a)-(c) is a schematic diagram explaining the manufacturing method of a silicon single crystal using the silica glass crucible which concerns on this embodiment.
As shown in FIG. 27A, when pulling up a silicon single crystal, polycrystalline silicon is filled in the silica glass crucible 11, and in this state, the polycrystalline silicon is heated by the heater disposed around the silica glass crucible 11. Let it melt. Thereby, the silicon melt 23 is obtained. Here, since the melting point of silicon is 1410 ° C., the temperature of the silicon melt 23 in the silica glass crucible 11 is 1410 ° C. or higher. At this time, breakage of the crucible during filling can be prevented by using the silica glass crucible of the present invention.

  The volume of the silicon melt 23 is determined by the mass of polycrystalline silicon. Therefore, the initial height position H 0 of the liquid surface 23 a of the silicon melt 23 is determined by the mass of polycrystalline silicon and the three-dimensional shape of the inner surface of the silica glass crucible 11. That is, when the three-dimensional shape of the inner surface of the silica glass crucible 11 is determined, the volume up to an arbitrary height position of the silica glass crucible 11 is specified, whereby the initial height of the liquid surface 23 a of the silicon melt 23 is obtained. The position H0 is determined.

  After the initial height position H0 of the liquid surface 23a of the silicon melt 23 is determined, the tip end of the seed crystal 24 is lowered to the height position H0 and brought into contact with the silicon melt 23. Then, the silicon single crystal 25 is grown by slowly pulling up the wire cable 561 while rotating it. At this time, the silica glass crucible 11 is rotated opposite to the rotation of the wire cable 561.

  As shown in FIG. 27 (b), when the liquid level 23 a is located on the side wall 11 a of the silica glass crucible 11 when pulling up the straight body (a part having a constant diameter) of the silicon single crystal 25. In addition, since the descent velocity V of the liquid surface 23a becomes substantially constant when pulling up at a constant speed, the control of pulling is easy.

  However, as shown in FIG. 27 (c), when the liquid level 23a reaches the corner portion 11c of the silica glass crucible 11, the area sharply decreases as the liquid level 23a descends, so the liquid level 23a descends. The velocity V rapidly increases. The falling speed V depends on the inner surface shape of the corner portion 11c.

  By accurately measuring the three-dimensional shape of the inner surface of the silica glass crucible 11, the inner surface shape of the corner portion 11c can be determined, and therefore, it can be accurately predicted how the falling velocity V changes. it can. Then, based on this prediction, pulling conditions such as the pulling speed of the silicon single crystal 25 are determined. At this time, by using the silica glass crucible 11 of the present embodiment, since the deformation from the predicted shape is small, the prediction accuracy of the falling velocity V is further improved. As a result, it is possible to prevent transition of the corner portion 11c and to automate pulling up.

  In the method of manufacturing a silicon single crystal according to the present embodiment, the deformation (heating, etc. of the side wall portion 11a due to heating of the side wall portion 11a) of the silica glass crucible 11 when heating the silicon single crystal 25 is suppressed. The deviation of the drop velocity V of the liquid surface 23a obtained from the three-dimensional shape of the inner surface of the glass crucible 11 is suppressed, and it becomes possible to manufacture the silicon single crystal 25 with a high crystallization rate with high yield. The silicon single crystal is pulled in an argon atmosphere under reduced pressure (about 660 Pa to about 13 kPa).

As a method of manufacturing a silicon single crystal according to the present embodiment, a plurality of silicon single crystals 25 may be pulled up with one silica glass crucible 11 (a multi-pulling method or a recharging method).
First, when the first silicon single crystal 25 is grown, a silicon raw material (polycrystalline silicon) filled in the silica glass crucible 11 as an initial charge is melted to form a silicon melt 23. At this time, the silicon melt 23 in the silica glass crucible 11 is heated by the heater for a long time until the pulling of the single crystal is started, and the position of the liquid level 23a is maintained at a constant height H0. . Thereafter, the seed crystal 24 is immersed in the silicon melt 23 and raised to pull up the first silicon single crystal 25.

  Subsequently, when the second silicon single crystal is grown, the silicon raw material is additionally supplied into the silica glass crucible 11 and melted to form a silicon melt 23 while maintaining the heating state of the silica glass crucible 11. The supply amount of the silicon raw material at that time is adjusted so that the position of the liquid level 23a of the silicon melt 23 is lower than the position of the liquid level 23a of the initial raw material melt in pulling up the first single crystal.

  That is, at the position of the liquid surface 23a of the initial raw material melt on the inner surface of the silica glass crucible 11, a groove (concave) is formed due to the local surface being broken (melted). In pulling up the second single crystal, the filling amount of the silicon raw material is adjusted so that the liquid level 23a of the initial raw material melt comes to a position lower than the groove (dent). The silicon melt 23 in the silica glass crucible 11 is heated by the heater for a long time until starting the pulling of the single crystal, but the position of the liquid level 23a is the initial raw material in the first single crystal pulling The height is changed to a position lower than the position of the liquid surface 23a of the melt, and is kept constant at that height.

  Thereafter, the second silicon single crystal 25 is pulled up from the silicon melt 23. And this process is repeated and single crystal growth of the third and subsequent ones is performed. In the third and subsequent single crystal growth, adjust the supply amount of silicon raw materials, and change the liquid level position of the initial raw material melt to a position lower than the liquid level position of the initial raw material melt in single crystal pulling performed immediately before Do.

  According to the method of manufacturing such a silicon single crystal 25, the liquid level position of the initial raw material melt in the silica glass crucible 11 is sequentially changed to a lower position as the silicon single crystal 25 is repeatedly pulled up. Even when local damage occurs to the inner surface of the silica glass crucible 11 at the liquid surface position of each initial raw material melt when growing the respective silicon single crystals 25, the damage develops in the subsequent single crystal growth There is nothing to do. That is, the progress of damage to the inner surface of the crucible due to the liquid level position of the initial raw material melt can be effectively suppressed. As a result, it becomes possible to prevent the dislocation of the single crystal caused by the elution of impurities and the exfoliation of quartz (Si oxide) excessively, and the silicon single crystal 25 with improved crystal quality is manufactured. can do.

  As described above, according to the embodiment, it is possible to nondestructively measure the glass structure of the silica glass crucible 11 which actually pulls up a silicon single crystal, and to suppress the occurrence of dislocation when pulling up a silicon single crystal. It is possible to identify the possible silica glass crucible 11 with high accuracy.

  Although the present embodiment has been described above, the present invention is not limited to these examples. For example, those skilled in the art may appropriately add, delete, or change the design of the components from the above-described embodiments, or may appropriately combine the features of the embodiments and the features of the present invention. As long as it is, it is included in the scope of the present invention.

DESCRIPTION OF SYMBOLS 10 ... Light-shielding part 11 ... Silica glass crucible 11a ... Side wall part 11b ... Bottom part 11c ... Corner part 13 ... Transparent layer 15 ... Non-transparent layer 20 ... Carbon mold 21 ... Air hole 23 ... Silicon melt 23a ... Liquid surface 24 ... Seed crystal 25 silicon single crystal 30 arc electrode 100 crucible measuring device 110 light shielding unit 120 measurement head 121 light emitting unit 122 light receiving unit 125 half mirror 130 operation unit 140 database unit 200 robot arm type crucible measurement system 201 ... 1st silica powder 202 ... 2nd silica powder 210 ... Robot arm 220 ... Mounting frame 221 ... Horizontal mount 223 ... Slide rail 224 ... Pedestal 250 ... Controller 310 ... Sample plate 320 ... Silicon 330 ... Silicon plate 340 ... Camera 500 ... Pulling up Apparatus 510 ... Chamber 520 ... Carbon susceptor 5 DESCRIPTION OF SYMBOLS 0 ... Support shaft 540 ... Heater 550 ... Heat retention cylinder 560 ... Pull-up means 561 ... Wire cable 570 ... Heat shielding member 571 ... Cone part 572 ... Flange part BR ... Brown ring CR ... Crucible IS ... Inner surface MR ... Measurement area TP ... On End face

Claims (9)

Evaluation of a silica glass crucible which is provided on the inner surface side after pulling up a silicon single crystal and in which a crystal layer in which silica glass is crystallized by a mineralizing agent and a non-crystal layer in contact with the crystal layer is formed Method,
Acquiring a first Raman spectrum which is a Raman spectrum of the surface of the crystal layer;
Acquiring a second Raman spectrum which is a Raman spectrum on the crystal layer side at the interface between the crystal layer and the non-crystal layer;
Acquiring a third Raman spectrum, which is a Raman spectrum on the non-crystalline layer side at the interface between the crystalline layer and the non-crystalline layer;
Determining the quality of the silica glass crucible based on the first Raman spectrum, the second Raman spectrum, and the third Raman spectrum;
Evaluation method of silica glass crucible equipped with.   In the step of determining the quality of the silica glass crucible, the silica is determined depending on whether or not a peak of a Raman shift caused by cristobalite exists in any of the first Raman spectrum, the second Raman spectrum, and the third Raman spectrum. The evaluation method of the silica glass crucible according to claim 1, comprising determining the quality of the glass crucible.   In the step of determining the quality of the silica glass crucible, when a peak of a Raman shift caused by the cristobalite is present in the third Raman spectrum, it is determined to be a non-defective product as compared to the case where it does not exist. The evaluation method of the silica glass crucible according to claim 1.   In the step of determining the quality of the silica glass crucible, when a peak of a Raman shift of the mineralizer is present in the second Raman spectrum, it is determined to be a non-defective product as compared to a case without the peak. The evaluation method of the silica glass crucible according to claim 1. It is provided on the inner surface side after pulling up a silicon single crystal, and is a silica glass crucible in which a crystal layer crystallized from silica glass by a crystallization accelerator and a non-crystal layer in contact with the crystal layer are formed. There,
The silica glass crucible judged to be non-defective by the evaluation method of the silica glass crucible according to any one of claims 1 to 3. The silica glass crucible according to claim 5;
A susceptor covering the outside of the silica glass crucible;
Silicon single crystal pulling device equipped with.   The silicon single crystal pulling apparatus according to claim 6, wherein the susceptor is made of carbon.   The silicon single crystal pulling apparatus according to claim 6, further comprising a shielding plate provided between an inner circumferential surface of the silica glass crucible and the silicon single crystal to be pulled up and shielding heat. A step of charging a silicon material into the silica glass crucible according to claim 5 and melting it.
Pulling the silicon single crystal from the silicon melt held in the silica glass crucible;
Method of producing silicon single crystal provided with